TWI793145B - Phosphor-converted white light emitting diodes having narrow-band green phosphors - Google Patents

Phosphor-converted white light emitting diodes having narrow-band green phosphors Download PDF

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TWI793145B
TWI793145B TW107125642A TW107125642A TWI793145B TW I793145 B TWI793145 B TW I793145B TW 107125642 A TW107125642 A TW 107125642A TW 107125642 A TW107125642 A TW 107125642A TW I793145 B TWI793145 B TW I793145B
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emitting device
light emitting
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TW201921731A (en
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強納森 梅爾曼
羅伯特 諾德賽爾
克利斯坦 布勞迪
伊凡 湯瑪士
高龍福
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美商卡任特照明解決方案有限責任公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

In one aspect, a phosphor converted white light LED comprising a narrow green phosphor rather than a conventional broad green phosphor may simultaneously exhibit high R9, and high Luminance Efficacy of Radiation, optionally without use of a deep red phosphor to maintain desired red color rendering. In another aspect, a phosphor converted white light LED comprising a narrow green phosphor rather than a conventional broad green phosphor may provide an emission spectrum exhibiting a significant dip in the yellow region of the spectrum and thereby provide high red-green contrast without use of a filter. The yellow dip may be shallower than in conventional devices, and the device may therefore be brighter, while maintaining desired CRI and R9.

Description

具有窄頻帶綠色磷光體之磷光體轉換白色發光二極體Phosphor-converted white light-emitting diodes with narrow-band green phosphors

本發明大體上係關於包含窄頻帶綠色磷光體之磷光體轉換白色發光二極體。 The present invention generally relates to phosphor-converted white light-emitting diodes comprising narrow-band green phosphors.

藉由度量R9來量測光源顯現深紅色之能力。未經濾色的白熾光源按照定義極好地顯現深紅色,通常大於97。替換白熾光源趨於爭取真實顯現紅色。舉例而言,高壓鈉燈及舊螢光照明管常常具有針對R9的負值,且幾乎將任何紅色減少成為相當暗淡的橙色外觀。早期的發光二極體(LED)因對紅色之不良顯現而聲名不佳。此情景如此明顯以至於與LED照明有關之許多程式僅需要R9>0。此與一般顯色指數(CRI)之要求形成對比,該等要求通常為CRI>80。 The ability of a light source to display deep red is measured by measuring R9. Unfiltered incandescent light sources by definition render deep reds extremely well, typically greater than 97. Replacing incandescent light sources tends to strive for true reds. For example, high pressure sodium lamps and old fluorescent lighting tubes often have negative values for R9 and reduce almost any red to a rather dull orange appearance. Early light-emitting diodes (LEDs) got a bad reputation for poor rendering of red. This situation is so obvious that many programs related to LED lighting only require R9>0. This is in contrast to general color rendering index (CRI) requirements, which are typically CRI>80.

一般言之,可藉由增加紅綠對比度,例如藉由移除可洗淨許多物體之外觀的黃光來使一般照明更合意。此現象在此項技術中已知多年,至少追溯至US 4,441,046「Incandescent lamps with neodymium oxide vitreous coatings」,其中氧化釹塗層濾除部分綠色及大部分黃色。基於此著作,在1995年,GE發佈白熾燈泡之Enrich®系列,且在2001年,重新命名系列Reveal®。白熾Reveal®產品線以及仍利用釹系濾光片之經更新的Reveal® LED產品如今仍存在。 In general, general lighting can be made more pleasing by increasing the red-green contrast, for example by removing yellow light which can wash out the appearance of many objects. This phenomenon has been known in the art for many years, dating back at least to US 4,441,046 "Incandescent lamps with neodymium oxide vitreous coatings", where the neodymium oxide coating filters out some of the green and most of the yellow. Based on this work, in 1995, GE released the Enrich® series of incandescent bulbs, and in 2001, renamed the series Reveal®. The incandescent Reveal® product line still exists today, along with the updated Reveal® LED products that still utilize neodymium filters.

圖1展示Reveal®白熾燈泡(實線)及Reveal® A19 LED燈泡(短劃線)之正規化發射光譜,其展示氧化釹濾光片在此等產品中之效果。本方法之一個最大缺陷為其產生光子且接著移除很大一部分已產生之光子。與60W等效A19之基準800流明相比,其在60W Reveal®白熱(520流明)及Reveal® LED A19(570流明)之額定輸出中可見。 Figure 1 shows the normalized emission spectra of a Reveal® incandescent bulb (solid line) and a Reveal® A19 LED bulb (dashed line), which demonstrates the effect of neodymium oxide filters in these products. One of the biggest drawbacks of this method is that it generates photons and then removes a significant portion of the generated photons. This is seen in the rated output of the 60W Reveal® Incandescent (520 lumens) and the Reveal® LED A19 (570 lumens) compared to the 60W equivalent A19's baseline of 800 lumens.

大體而言,其已成為製造發白光磷光體轉換LED之行業目標,該等LED之發射光譜在500奈米(nm)與約600nm之間的範圍內相對平坦、傾斜及連續。其一般形狀大致反射參考發光體,例如黑體輻射器之發射光譜,諸如標準白熱。如圖1中所示,用於Reveal®產品中之氧化釹濾光片引入發射光譜在黃色區域中之下降。此類下降的特徵可在於當與400nm與700nm之間的發射光譜的最大強度相比時處於其最低值的殘餘強度,例如,對於白熾版為約25%且對於LED A19版為約33%。 In general, it has become an industry goal to manufacture white-emitting phosphor-converted LEDs whose emission spectra are relatively flat, sloped, and continuous in the range between 500 nanometers (nm) and about 600 nm. Its general shape roughly reflects the emission spectrum of a reference illuminant, eg a black body radiator, such as a standard incandescent. As shown in Figure 1, the neodymium oxide filters used in Reveal® products introduce a dip in the yellow region of the emission spectrum. Such a drop may be characterized by a residual intensity at its lowest value when compared to the maximum intensity of the emission spectrum between 400nm and 700nm, eg about 25% for the incandescent version and about 33% for the LED A19 version.

紅綠對比度在CRI/Ra系統中並不具有明晰度量,但其在一定程度上可藉由IES TM-30-15方法之色域指標度量(Rg)捕捉。申請人量測針對Reveal®白熱為109與針對未經濾色的白熱為101的Rg。Reveal® LED燈泡類似地在為104之高Rg值下進行量測。出人意料地,儘管色域指示良好,此等燈泡在R9深紅色度量上的量測仍相對不良。此方法之缺陷為所用釹濾光片減去大量產生的光。受此等釹濾光片影響之波長區域中之光子尤其特別明亮,與每光學瓦特683流明之最大值相比,其範圍通常為每光學瓦特512至625流明。Reveal® LED燈泡經額定為使用10.5W遞送570流明,而類似相關色溫(CCT)及來自Relax®系列之CRI LED燈泡使用彼等相同10.5W遞送800流明。 The red-green contrast ratio does not have a clear measurement in the CRI/Ra system, but it can be captured by the color gamut index measurement (Rg) of the IES TM-30-15 method to a certain extent. Applicants measured an Rg of 109 for Reveal® white heat and 101 for unfiltered white heat. Reveal® LED bulbs were similarly measured at a high Rg value of 104. Surprisingly, despite a good color gamut indication, these bulbs measure relatively poorly on the R9 crimson scale. The drawback of this method is the use of neodymium filters to subtract the large amount of light produced. Photons in the wavelength region affected by these neodymium filters are particularly bright, typically in the range of 512 to 625 lumens per optical watt, compared to a maximum of 683 lumens per optical watt. Reveal® LED bulbs are rated to deliver 570 lumens using 10.5W, while similar correlated color temperature (CCT) and CRI LED bulbs from the Relax® series deliver 800 lumens using their same 10.5W.

通常,發白光磷光體轉換LED包含兩種或有時三種與具有 約60至100nm之半高全寬(FWHM)及約500至570nm之峰值波長的寬綠色或黃色磷光體及具有約70至100nm之FWHM及約615至670nm或更通常約625至650nm之峰值波長的寬紅色磷光體組合的磷光體摻合物。 Typically, white-emitting phosphor-converted LEDs contain two or sometimes three Broad green or yellow phosphors with a full width at half maximum (FWHM) of about 60 to 100 nm and a peak wavelength of about 500 to 570 nm and a broad green or yellow phosphor having a FWHM of about 70 to 100 nm and a peak wavelength of about 615 to 670 nm or more typically about 625 to 650 nm Phosphor blends of red phosphor combinations.

歸因於紅色磷光體發射與典型人眼之明視回應曲線之較好重疊,具有處於625至630nm之峰值發射之紅色磷光體提供較高功效,但此對於紅色磷光體發射之選擇通常會損害R9。相反,具有接近650nm之峰值發射之紅色磷光體提供較好紅色顯現,但是以功效為代價,因為較長波長紅光發射對LED之總體亮度貢獻較少。通常在如藉由R9量測之光源的深紅色顯現與光譜效率或光譜之輻射發光效率(LER)之間存在反比關係。 Red phosphors with peak emission at 625 to 630 nm provide higher efficacy due to better overlap of the red phosphor emission with the photopic response curve of the typical human eye, but this selection of red phosphor emission typically compromises R9. In contrast, red phosphors with peak emission near 650nm provide better red rendering, but at the expense of efficacy, since longer wavelength red emission contributes less to the overall brightness of the LED. There is generally an inverse relationship between the deep red appearance of a light source, as measured by R9, and the spectral efficiency, or spectral luminous efficiency (LER).

在本發明之一個態樣中,申請人已發現,包含窄綠色磷光體而非習知寬綠色磷光體之磷光體轉換白光LED可在不使用深紅色磷光體來維持所要紅色顯色性的情況下同時展現高R9、高CRI及高輻射亮度功效。舉例而言,在此類器件中,最長波長磷光體峰值發射可短於約635nm。 In one aspect of the invention, applicants have discovered that a phosphor-converted white LED comprising a narrow green phosphor instead of a conventional broad green phosphor can simultaneously maintain the desired red color rendering without using a deep red phosphor. Show high R9, high CRI and high radiance effect. For example, in such devices, the longest wavelength phosphor peak emission can be shorter than about 635 nm.

在本發明之一個態樣中,申請人已發現,包含窄綠色磷光體而非習知寬綠色磷光體之磷光體轉換白光LED可提供在光譜之黃色區域中展現明顯下降之發射光譜,且由此在不使用濾光片的情況下提供高紅綠對比度。因為此黃色下降處於光發射中而非由濾光片引起,因此未丟失進行濾光的發射功率。此外,申請人已發現,藉由使用窄綠色磷光體,相比在先前技術產品中,黃色下降可更淺,且該器件因此可更亮,同時維持所要CRI及R9(紅色顯色性)。黃色下降中之最低強度在器件的介於約400 nm與約700nm之間的總發射光譜中可例如大於25%的峰值強度。 In one aspect of the invention, applicants have discovered that a phosphor-converted white LED comprising a narrow green phosphor instead of a conventional broad green phosphor can provide an emission spectrum that exhibits a significant drop in the yellow region of the spectrum, and thus in the yellow region of the spectrum. Provides high red-green contrast without the use of filters. Since this yellow drop is in the light emission and not caused by the filter, no emission power is lost for filtering. Furthermore, applicants have discovered that by using a narrow green phosphor, the yellow drop can be lighter than in prior art products, and the device can therefore be brighter while maintaining the desired CRI and R9 (red color rendering). The lowest intensity in the yellow dip is between about 400 for the device There may be, for example, greater than 25% peak intensity in the total emission spectrum between nm and about 700 nm.

當結合首先簡短描述之附圖參考本發明之以下更詳細描述時,本發明之此等及其他實施例、特徵及優勢將對熟習此項技術者變得更顯而易見。 These and other embodiments, features and advantages of the present invention will become more apparent to those skilled in the art when reference is made to the following more detailed description of the invention in conjunction with the accompanying drawings, first briefly described.

圖1展示Reveal®白熾燈泡(實線)及Reveal® A19 LED燈泡(短劃線)之正規化發射光譜。 Figure 1 shows the normalized emission spectra of a Reveal® incandescent bulb (solid line) and a Reveal® A19 LED bulb (dashed line).

圖2展示用於35nm FWHM在524nm(點線)、534nm(短劃線)及528nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正規化模擬光譜。 Figure 2 shows the normalized simulated spectrum of a 2700 K LED for a 35nm FWHM with green phosphor emission peaking at 524nm (dotted line), 534nm (dashed line), and 528nm (solid line).

圖3展示40nm FWHM在520nm(點線)、532nm(短劃線)及526nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正規化模擬光譜。 Figure 3 shows the normalized simulated spectrum of a 2700 K LED with a 40nm FWHM of green phosphor emission peaking at 520nm (dotted line), 532nm (dashed line) and 526nm (solid line).

圖4A為經模擬磷光體轉換LED的duv對CRI之曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有處於532nm之峰值發射及40nm之FWHM的綠色磷光體。 Figure 4A is a plot of duv versus CRI for simulated phosphor converted LEDs comprising blue LEDs, ER6436 red phosphor and green phosphor with peak emission at 532nm and FWHM of 40nm.

圖4B為經模擬磷光體轉換LED的duv對CRI之曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有處於528nm之峰值發射及40nm之FWHM的綠色磷光體。 Figure 4B is a plot of duv versus CRI for simulated phosphor converted LEDs comprising blue LEDs, ER6436 red phosphor and green phosphor with peak emission at 528nm and FWHM of 40nm.

圖4C為經模擬磷光體轉換LED的duv對CRI之曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有處於526nm之峰值發射及40nm之FWHM的綠色磷光體。 Figure 4C is a plot of duv versus CRI for simulated phosphor converted LEDs comprising blue LEDs, ER6436 red phosphor and green phosphor with peak emission at 526nm and FWHM of 40nm.

圖5展示45nm FWHM在518nm(點線)、530nm(短劃線) 及524nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正規化模擬光譜。 Figure 5 shows 45nm FWHM at 518nm (dotted line), 530nm (dashed line) and normalized simulated spectra of a 2700 K LED emitting from a green phosphor peaking at 524 nm (solid line).

圖6展示35nm FWHM在514nm(長短劃線)、516nm(短劃線)、518nm(實線)及520nm(點線)達到峰值之綠色磷光體發射的3000 K LED的經正規化模擬光譜。 Figure 6 shows the normalized simulated spectra of the 3000 K LED emission from a green phosphor with a 35nm FWHM peaking at 514nm (long and short dash lines), 516nm (dashed line), 518nm (solid line) and 520nm (dotted line).

圖7展示用於36nm FWHM在517nm達到峰值之綠色磷光體發射的3000 K LED的模擬光譜(實線)及表4C中表徵之實例磷光體轉換LED之經量測光譜(短劃線)。 Figure 7 shows the simulated spectrum (solid line) of a 3000 K LED for green phosphor emission with a 36nm FWHM peaking at 517nm and the measured spectrum (dashed line) of the example phosphor-converted LED characterized in Table 4C.

圖8展示用於40nm FWHM在522nm(點線)、530nm(短劃線)及534nm(實線)達到峰值之綠色磷光體發射的3000k LED的經正規化模擬光譜。 Figure 8 shows the normalized simulated spectrum of a 3000k LED for a 40nm FWHM with green phosphor emission peaking at 522nm (dotted line), 530nm (dashed line) and 534nm (solid line).

圖9A為經模擬磷光體轉換LED之duv對CRI的曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有處於530nm之峰值發射之綠色磷光體。 Figure 9A is a graph of duv versus CRI for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 530nm.

圖9B為經模擬磷光體轉換LED之duv對CRI的曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有處於528nm之峰值發射之綠色磷光體。 Figure 9B is a graph of duv versus CRI for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 528nm.

圖9C為經模擬磷光體轉換LED之duv對CRI的曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有在526nm處之峰值發射之綠色磷光體。 Figure 9C is a graph of duv versus CRI for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 526nm.

圖9D為經模擬磷光體轉換LED之duv對CRI的曲線圖,該等LED包含藍色LED、ER6436紅色磷光體及具有在522nm處之峰值發射之綠色磷光體。 Figure 9D is a graph of duv versus CRI for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 522nm.

圖10展示用於45nm FWHM在520nm(點線)、524nm(短劃線)及530nm(實線)達到峰值之綠色磷光體發射的3000 K LED的經正規化模擬光譜。 Figure 10 shows the normalized simulated spectrum of a 3000 K LED for a 45nm FWHM with green phosphor emission peaking at 520nm (dotted line), 524nm (dashed line), and 530nm (solid line).

圖11展示用於35nm FWHM在520nm(點線)、518nm(實線)及516nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 11 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 35nm FWHM peaking at 520nm (dotted line), 518nm (solid line) and 516nm (dashed line).

圖12展示用於36nm FWHM在517nm達到峰值之綠色磷光體發射的3500 K LED的模擬光譜(實線)及表7C中表徵之實例磷光體轉換LED之經量測光譜(短劃線)。 Figure 12 shows the simulated spectrum (solid line) of a 3500 K LED for green phosphor emission with a 36nm FWHM peaking at 517nm and the measured spectrum (dashed line) of the example phosphor-converted LED characterized in Table 7C.

圖13展示用於40nm FWHM在532nm(點線)、528nm(實線)及524nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 13 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 40nm FWHM peaking at 532nm (dotted line), 528nm (solid line) and 524nm (dashed line).

圖14展示用於45nm FWHM在530nm(點線)、526nm(實線)及522nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 14 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 45nm FWHM peaking at 530nm (dotted line), 526nm (solid line) and 522nm (dashed line).

圖15在橫軸上標繪針對模擬白光磷光體轉換LED的CRI及R9與綠色磷光體發射峰值波長,該等模擬白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及窄綠色磷光體。 Figure 15 plots on the horizontal axis CRI and R9 and green phosphor emission peak wavelengths for simulated white phosphor-converted LEDs including blue LEDs, ER6436 red phosphor, and narrow green phosphor.

圖16標繪模擬白光磷光體轉換LED之CRI與duv,該等LED包含藍色LED、ER6436紅色磷光體及具有532nm之峰值波長及變化的FWHM的窄綠色磷光體。 Figure 16 plots CRI versus duv for simulated white phosphor-converted LEDs comprising a blue LED, ER6436 red phosphor, and a narrow green phosphor with a peak wavelength of 532nm and varying FWHM.

圖17標繪經模擬白光磷光體轉換LED之CRI與duv,該等LED包含藍色LED、ER6436紅色磷光體及具有522nm之峰值波長及變化 的FWHM的窄綠色磷光體。 Figure 17 plots CRI and duv for simulated white phosphor-converted LEDs comprising blue LEDs, ER6436 red phosphor, and peak wavelength and variation at 522nm The FWHM of the narrow green phosphor.

相關申請案之交叉參考Cross References to Related Applications

本申請案主張2017年8月16日提交申請且名為「Phosphor-Converted White Light Emitting Diodes Having Narrow Band Green Phosphors」之美國專利申請案第15/679,021號及2017年7月31日提交申請且名為「Phosphor-Converted White Light Emitting Diodes Having Narrow Band Green Phosphors」之美國臨時專利申請案第62/539,233號的優先權,該等申請案兩者均以全文引用之方式併入本文中。 This application claims U.S. Patent Application No. 15/679,021 filed on August 16, 2017 and entitled "Phosphor-Converted White Light Emitting Diodes Having Narrow Band Green Phosphors" and filed on July 31, 2017 and named Priority to US Provisional Patent Application No. 62/539,233 for "Phosphor-Converted White Light Emitting Diodes Having Narrow Band Green Phosphors," both of which are incorporated herein by reference in their entirety.

本申請案以全文引用之方式併入2017年5月10日提交申請且名為「Phosphors With Narrow Green Emission」的美國專利申請案第15/591,629號。 This application is incorporated by reference in its entirety in U.S. Patent Application Serial No. 15/591,629, filed May 10, 2017, and entitled "Phosphors With Narrow Green Emission."

政府支援聲明Statement of Government Support

本發明係利用來自美國國家科學基金會(National Science Foundation)在基金號1534771下及能源部(Department of Energy)在基金號DE-EE0007622下的政府支援來進行。聯邦政府享有本發明之某些權利。本發明亦係利用來自在肯塔基州經濟發展內閣、創業辦公室在肯塔基州科學及技術公司(Kentucky Science and Technology Corporation)之撥款協議KSTC-184-512-17-247下之支援進行。 This invention was made with government support from the National Science Foundation under Grant No. 1534771 and the Department of Energy under Grant No. DE-EE0007622. The Federal Government has certain rights in this invention. This invention was also made with support from the Kentucky Economic Development Cabinet, Office of Entrepreneurship under grant agreement KSTC-184-512-17-247 from the Kentucky Science and Technology Corporation.

以下詳細描述應參考圖式來閱讀,其中相同附圖標號係指貫穿不同圖式之相同元件。未必按比例之圖式描繪選擇性實施例,且並不意欲限制本發明之範疇。詳細描述以實例而非限制之方式來說明本發明之原理。本說明書將明確地使得熟習此項技術者能夠製作及使用本發明,且 描述本發明之若干實施例、修改、變化、替代例及用途。如本說明書及申請專利範圍中所使用,術語LED意欲包括發光二極體及半導體雷射二極體。 The following detailed description should be read with reference to the drawings, wherein like reference numerals refer to like elements throughout the different drawings. The drawings, which are not necessarily to scale, depict selected embodiments and are not intended to limit the scope of the invention. The detailed description illustrates the principles of the invention by way of example and not limitation. This description will clearly enable those skilled in the art to make and use the invention, and Several embodiments, modifications, variations, alternatives and uses of the invention are described. As used in this specification and claims, the term LED is intended to include light emitting diodes and semiconductor laser diodes.

申請人已研發出可藉由發藍光LED激發且發射窄帶綠光作為回應之新磷光體家族。此等磷光體通常在約500nm至約550nm之峰值波長下發射,其中該峰值的FWHM為約30nm至約50nm。此等磷光體之實例稍後描述於本說明書中以及上文所參考之名為「Phosphors With Narrow Green Emission」的美國專利申請案第15/591,629號中。 Applicants have developed a new family of phosphors that can be excited by blue-emitting LEDs and emit narrow-band green light in response. These phosphors typically emit at a peak wavelength of about 500 nm to about 550 nm, with a FWHM of the peak of about 30 nm to about 50 nm. Examples of such phosphors are described later in this specification and in US Patent Application No. 15/591,629, entitled "Phosphors With Narrow Green Emission," which is referenced above.

另外,申請人已模擬來自發白光磷光體轉換LED的總發射光譜,該等LED包含藍色LED、由藍色LED激發之綠色磷光體及由藍色LED激發之紅色磷光體。在此等模擬中,藍色LED具有約455nm處之峰值發射及約20nm之FWHM。綠色磷光體具有約500nm至約550nm處之峰值發射及約30nm至約50nm之FWHM(與申請人之各種新型窄綠色磷光體一樣);在一些情況下,綠色磷光體可為2個或更多個略不同磷光體之摻合物。在一些模擬中,紅色磷光體具有約630nm處之峰值發射及約90nm之FWHM,其大體上對應於來自Intematix Corporation ER6436紅色磷光體或Mitsubishi Chemical BR-102C之發射。在其他模擬中,紅色磷光體具有約626nm處之峰值發射及約80nm之FWHM,其大體上對應於來自Mitsubishi Chemical Corporation BR-102/Q紅色磷光體之發射。並無其他光源(例如,並無另外的LED或另外的磷光體)會促成來自經模擬器件的總發射。然而,在一些實施例中,如本說明書中所描述之發白光磷光體轉換LED可視情況包含另外的磷光體,例如,另外的發綠光磷光體及/或另外的發紅光磷光體。 In addition, Applicants have simulated the total emission spectrum from white-emitting phosphor-converted LEDs comprising a blue LED, a green phosphor excited by the blue LED, and a red phosphor excited by the blue LED. In these simulations, the blue LED had a peak emission at about 455nm and a FWHM of about 20nm. The green phosphor has a peak emission at about 500nm to about 550nm and a FWHM of about 30nm to about 50nm (as with applicant's various novel narrow green phosphors); in some cases, there may be 2 or more green phosphors A blend of slightly different phosphors. In some simulations, the red phosphor has a peak emission at about 630 nm and a FWHM of about 90 nm, which roughly corresponds to the emission from Intematix Corporation ER6436 red phosphor or Mitsubishi Chemical BR-102C. In other simulations, the red phosphor has a peak emission at about 626 nm and a FWHM of about 80 nm, which roughly corresponds to the emission from the Mitsubishi Chemical Corporation BR-102/Q red phosphor. No other light sources (eg, no additional LEDs or additional phosphors) would contribute to the total emission from the simulated device. However, in some embodiments, a white-emitting phosphor-converted LED as described in this specification may optionally include additional phosphors, eg, additional green-emitting phosphors and/or additional red-emitting phosphors.

在此等模擬中,紅色磷光體峰值及帶寬保持恆定,LED發射峰值及帶寬保持恆定,綠色磷光體發射峰值及帶寬變化,綠色磷光體發射強度與藍色LED發射強度之比率變化,且紅色磷光體發射強度與藍色LED發射強度之比率變化。(改變綠色及紅色磷光體發射強度與藍色LED發射強度之比率類似於改變磷光體轉換LED中之磷光體濃度及負載)。 In these simulations, the red phosphor peak and bandwidth were held constant, the LED emission peak and bandwidth were held constant, the green phosphor emission peak and bandwidth were varied, the ratio of green phosphor emission intensity to blue LED emission intensity was varied, and the red phosphor The ratio of volume emission intensity to blue LED emission intensity varies. (Changing the ratio of green and red phosphor emission intensities to blue LED emission intensities is similar to changing phosphor concentration and loading in phosphor converted LEDs).

藉由以下表徵模擬光譜:計算各種參數,包括(例如)CCT、Duv(CIE色度圖中與普朗克軌跡之距離)、CRI、R9、R11、LER,及在光譜之黃色區域(例如約550nm至約580nm)中之下降(凹陷)的最小值下的強度,其經量測為範圍約400nm至約700nm之發射光譜中的最大強度的百分比。 The simulated spectrum was characterized by calculating various parameters including, for example, CCT, Duv (distance from the Planckian locus in the CIE chromaticity diagram), CRI, R9, R11, LER, and in the yellow region of the spectrum (e.g., about 550 nm to about 580 nm), which is measured as a percentage of the maximum intensity in the emission spectrum in the range of about 400 nm to about 700 nm.

下文呈現此等模擬之一些例示性結果及一些相關量測。 Some exemplary results of these simulations and some related measurements are presented below.

CCT 2700 KCCT 2700K

下表1A表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有524nm、528nm或534nm處之峰值發射及35nm之FWHM的綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K,且CRI大於90。 Table 1A below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 524 nm, 528 nm, or 534 nm and a FWHM of 35 nm. body. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0011-1
Figure 107125642-A0305-02-0011-1

具有35nm FWHM之綠色磷光體結合具有約90nm FWHM之紅色磷光體之趨向似乎為R11在534nm之磷光體波長下具有最大值。R11值隨後隨著峰值波長減小而減小。R9值趨向不僅極其依賴於綠色磷光 體峰值波長,而且依賴於CCT及duv。對於CCT與CRI之此特定組合,R9似乎會展示關於522-524nm磷光體之相對最大值,其中對於524nm峰值綠色磷光體,發現最高值94。對於532至522nm之峰值,R9隨著CCT增加及在較小程度上隨著duv減小而增加。對於峰值為534nm之綠色磷光體,當CCT大約為2700K時,R9在CCT及duv變化過程中保持極其恆定。 The trend for a green phosphor with a 35nm FWHM combined with a red phosphor with a FWHM of about 90nm appears to be that R11 has a maximum at the phosphor wavelength of 534nm. The R11 value then decreases as the peak wavelength decreases. R9 values tend not only to be extremely dependent on green phosphorescence Bulk peak wavelength, and depends on CCT and duv. For this particular combination of CCT and CRI, R9 appears to exhibit a relative maximum for the 522-524nm phosphor, with the highest value of 94 found for the 524nm peak green phosphor. For the peak at 532 to 522 nm, R9 increases with increasing CCT and to a lesser extent with decreasing duv. For the green phosphor with a peak at 534nm, when the CCT is about 2700K, R9 remains extremely constant across CCT and duv.

下表1B表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、BR102/Q紅色磷光體及具有522nm、526nm或532nm處之峰值發射及35nm之FWHM的綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K。 Table 1B below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, a BR102/Q red phosphor, and a chromatogram having a peak emission at 522nm, 526nm, or 532nm and a FWHM of 35nm. Green phosphor. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K.

Figure 107125642-A0305-02-0012-2
Figure 107125642-A0305-02-0012-2

更窄(大約80nm FWHM)及略經藍色移位(4nm)BR102/Q具有略微降低最大可達成CRI及R9之預期結果,同時增加總體LER;此外,紅色磷光體光譜之移位使與其配對以得到R9、CRI及R11之最大值的綠色磷光體的範圍變化。上文概述之各種趨向與經移位紅色磷光體類似,但亦經移位。舉例而言,對於具有532nm峰值波長之磷光體,觀測到最大R11值。關於利用CCT及duv對R9之改變,上文概述之R9趨向亦適用,所檢查之磷光體摻合物中無一者展示相對恆定的R9,如對於534nm綠色及ER6436觀測到的。 Narrower (about 80nm FWHM) and slightly blue-shifted (4nm) BR102/Q with slightly lower maxima achieves the expected results of CRI and R9 while increasing overall LER; moreover, the shift in the red phosphor spectrum makes it paired with The range of green phosphors to obtain the maximum value of R9, CRI and R11 varies. The various trends outlined above are similar to displaced red phosphors, but also displaced. For example, the largest R11 value was observed for a phosphor with a peak wavelength of 532 nm. The R9 trends outlined above also hold true with respect to changes to R9 with CCT and duv, none of the phosphor blends examined exhibited a relatively constant R9 as observed for 534nm green and ER6436.

圖2展示用於35nm FWHM在524nm(點線)、534nm(短劃線)及528nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正 規化模擬光譜。 Figure 2 shows the normalized results for a 2700 K LED for a 35nm FWHM with green phosphor emission peaking at 524nm (dotted line), 534nm (dashed line), and 528nm (solid line). Normalize the simulated spectrum.

下表2表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有520nm、526nm或532nm處之峰值發射及40nm之FWHM的綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K,且CRI大於90。 Table 2 below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 520nm, 526nm, or 532nm and a FWHM of 40nm body. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0013-3
Figure 107125642-A0305-02-0013-3

具有40nm FWHM之綠色磷光體之趨向似乎為R11在532nm之磷光體波長下具有最大值。R11值隨後隨著峰值波長移動至534nm或減小至520nm而減小。R9值趨向不僅極其依賴於綠色磷光體峰值波長,而且依賴於CCT及duv。對於CCT與CRI之此特定組合,R9似乎會展示關於520nm磷光體之相對最大值,其中最高值為96。對於534至520nm之峰值,R9隨著CCT增加及在較小程度上隨著duv減小而增加。 The trend for green phosphors with 40nm FWHM appears to be that R11 has a maximum at the phosphor wavelength of 532nm. The R11 value then decreases as the peak wavelength shifts to 534 nm or decreases to 520 nm. R9 values tend to be extremely dependent not only on the green phosphor peak wavelength, but also on CCT and duv. For this particular combination of CCT and CRI, R9 appears to exhibit a relative maximum for the 520nm phosphor, with the highest being 96. For the peak from 534 to 520 nm, R9 increases with increasing CCT and to a lesser extent with decreasing duv.

圖3展示用於40nm FWHM在520nm(點線)、532nm(短劃線)及526nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正規化模擬光譜。 Figure 3 shows the normalized simulated spectrum of a 2700 K LED for a 40nm FWHM with green phosphor emission peaking at 520nm (dotted line), 532nm (dashed line) and 526nm (solid line).

一般公認的是,發白光磷光體轉換LED之CRI隨著特定磷光體摻合物之色點移動至CIE色彩空間下方而增加,通常藉由減小duv而表徵。圖4A標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有532nm處之峰值發射及40nm之FWHM之綠色磷光體。此等光譜之CCT 介於2600 K與2850 K之間,標稱2700 K。此曲線圖展示CRI隨著duv減小在約90至約94之CRI範圍內遞增的預期趨向。 It is generally accepted that the CRI of white-emitting phosphor-converted LEDs increases as the color point of a particular phosphor blend moves below the CIE color space, typically characterized by a decrease in duv. 4A plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a peak emission at 532 nm and a FWHM of 40 nm. The green phosphor. CCT of these spectra Between 2600 K and 2850 K, nominally 2700 K. This graph shows the expected trend of increasing CRI with decreasing duv over a CRI range of about 90 to about 94.

圖4B標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有528nm處之峰值發射及40nm之FWHM之綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K。此曲線圖展示跨越將被視為「白光」之整個範圍的約93至約94的相對一致的CRI。 4B plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a peak emission at 528 nm and a FWHM of 40 nm. The green phosphor. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K. This graph shows a relatively consistent CRI of about 93 to about 94 across the entire range that would be considered "white light."

圖4C標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有526nm處之峰值發射及40nm之FWHM之綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K。此曲線圖亦展示跨越將被視為「白光」之整個範圍的約93至約94的相對一致的CRI。 4C plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a peak emission at 526 nm and a FWHM of 40 nm. The green phosphor. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K. This graph also shows a relatively consistent CRI of about 93 to about 94 across the entire range that would be considered "white light."

下表3表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有518nm、524nm或530nm處之峰值發射及45nm之FWHM的綠色磷光體。此等光譜之CCT介於2600 K與2850 K之間,標稱2700 K,且CRI大於90。 Table 3 below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 518 nm, 524 nm, or 530 nm and a FWHM of 45 nm body. The CCT of these spectra is between 2600 K and 2850 K, nominally 2700 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0014-4
Figure 107125642-A0305-02-0014-4

具有45nm FWHM之綠色磷光體之趨向似乎為R11在530nm之磷光體波長下具有最大值。R11值隨後隨著峰值波長移動至532nm或減小至518nm而減小。R9值趨向不僅極其依賴於綠色磷光體峰值波 長,而且依賴於CCT及duv。對於CCT與CRI之此特定組合,R9似乎會展示關於518nm磷光體之相對最大值,其中最高值為96。對於532至518nm之峰值,R9隨著CCT增加及在較小程度上隨著duv減小而增加。 The trend for green phosphors with a 45nm FWHM appears to be that R11 has a maximum at the phosphor wavelength of 530nm. The R11 value then decreases as the peak wavelength shifts to 532 nm or decreases to 518 nm. The R9 value tends not only to be extremely dependent on the green phosphor peak wave Long and depends on CCT and duv. For this particular combination of CCT and CRI, R9 appears to exhibit a relative maximum for the 518nm phosphor, with the highest being 96. For the peak from 532 to 518 nm, R9 increases with increasing CCT and to a lesser extent with decreasing duv.

圖5展示用於45nm FWHM在518nm(點線)、530nm(短劃線)及524nm(實線)達到峰值之綠色磷光體發射的2700 K LED的經正規化模擬光譜。. Figure 5 shows the normalized simulated spectrum of a 2700 K LED for a 45nm FWHM with green phosphor emission peaking at 518nm (dotted line), 530nm (dashed line) and 524nm (solid line). .

類似於上文所論述之針對包含具有40nm FWHM發射之經模擬發白光磷光體轉換LED的CRI對duv趨向,包含具有530nm至536nm處之峰值發射及45nm FWHM的綠色磷光體展示CRI範圍橫越2700K白色區域之4種預期趨向。對於大約528nm之綠色峰值發射,CRI範圍開始變窄,且對於526nm之磷光體,摻合物僅在橫越白色區域的1點內建立CRI。一旦綠色磷光體之峰值發射波長減小至522nm,則摻合物展示出CRI隨著duv增加而增加的特性,且CRI範圍大致為橫越白色區域之3個點。 Similar to the CRI versus duv trends discussed above for a simulated white-emitting phosphor-converted LED comprising a 40nm FWHM emission, a green phosphor comprising a peak emission at 530nm to 536nm and a 45nm FWHM exhibits a CRI range across 2700K 4 expected trends in the white area. For the green peak emission around 528nm, the CRI range starts to narrow, and for the phosphor at 526nm, the blend only establishes a CRI within 1 point across the white region. Once the peak emission wavelength of the green phosphor is reduced to 522nm, the blend exhibits a characteristic of CRI increasing with duv, and the CRI ranges approximately 3 points across the white region.

CCT 3000 KCCT 3000K

下表4A表徵發白光磷光體轉換LED之四個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有514nm、516nm、518nm或520nm處之峰值發射及35nm之FWHM的綠色磷光體。此等光譜之CCT介於2850 K與3250 K之間,標稱3000 K,且CRI大於80。 Table 4A below characterizes four simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a chromatogram having a peak emission at 514nm, 516nm, 518nm, or 520nm and a FWHM of 35nm. Green phosphor. The CCT of these spectra is between 2850 K and 3250 K, nominally 3000 K, and the CRI is greater than 80.

Figure 107125642-A0305-02-0016-5
Figure 107125642-A0305-02-0016-5

下表4B表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含具有457nm處之峰值發射及21nm之FWHM的藍色LED、BR102/Q紅色磷光體及具有517nm處之峰值發射及36nm之FWHM的綠色磷光體。此光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 4B below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED with a peak emission at 457 nm and a FWHM of 21 nm, a BR102/Q red phosphor, and a peak emission at 517 nm And the green phosphor of FWHM of 36nm. The CCT of this spectrum is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0016-6
Figure 107125642-A0305-02-0016-6

下表4C表徵實例發白光磷光體轉換LED(樣本編號JM388F9-28ma)之經量測光譜,該實例發白光磷光體轉換LED包含具有457nm處之峰值發射及21nm之FWHM的藍色LED、BR102/Q紅色磷光體及具有517nm處之峰值發射及36nm之FWHM的綠色磷光體(樣本KB3-170-545)。此光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 4C below characterizes the measured spectrum of an example white-emitting phosphor-converted LED (Sample No. JM388F9-28ma) comprising a blue LED, BR102/ Q red phosphor and green phosphor with peak emission at 517 nm and FWHM of 36 nm (sample KB3-170-545). The CCT of this spectrum is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0017-7
Figure 107125642-A0305-02-0017-7

具有35nm FWHM之綠色磷光體之趨向似乎為R11在520nm之磷光體波長下具有最大值。R11值隨後隨著峰值波長減小而減小。R9值趨向不僅極其依賴於綠色磷光體峰值波長,而且依賴於CCT及duv。對於520至516nm之峰值,R9隨著duv增加且隨著CCT減小而增加。對於峰值為514nm之綠色磷光體,當CCT大約為3000K時,R9在CCT及duv變化過程中保持極其恆定。利用在520nm處達到峰值之磷光體及一些具有518nm之磷光體獲得最高R9值(R9>90)。 The trend for green phosphors with a 35nm FWHM appears to be that R11 has a maximum at the phosphor wavelength of 520nm. The R11 value then decreases as the peak wavelength decreases. R9 values tend to be extremely dependent not only on the green phosphor peak wavelength, but also on CCT and duv. For the peak from 520 to 516 nm, R9 increases with increasing duv and with decreasing CCT. For the green phosphor with a peak at 514nm, when the CCT is about 3000K, R9 remains extremely constant across CCT and duv. The highest R9 values (R9>90) were obtained with phosphors peaking at 520nm and some with 518nm.

圖6展示用於35nm FWHM在514nm(長短劃線)、516nm(點線)、518nm(短劃線)及520nm(實線)達到峰值之綠色磷光體發射的3000 K LED的經正規化模擬光譜。 Figure 6 shows the normalized simulated spectra of a 3000 K LED for a 35nm FWHM with green phosphor emission peaking at 514nm (dashed line), 516nm (dashed line), 518nm (dashed line) and 520nm (solid line). .

圖7展示用於36nm FWHM在517nm達到峰值之綠色磷光體發射的3000 K LED的模擬光譜(實線)及表4C中表徵之實例磷光體轉換LED之經量測光譜(短劃線)。 Figure 7 shows the simulated spectrum (solid line) of a 3000 K LED for green phosphor emission with a 36nm FWHM peaking at 517nm and the measured spectrum (dashed line) of the example phosphor-converted LED characterized in Table 4C.

下表5A表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有522nm處之峰值發射及40nm之FWHM的綠色磷光體。具有此等光譜特徵之綠色磷光體已經製備為樣本編號YBG170620-1(521-41)。此光譜之CCT介於2850 K與3250 K之間,標稱3000 K,且CRI大於90。 Table 5A below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED, ER6436 red phosphor, and a green phosphor with peak emission at 522 nm and a FWHM of 40 nm. A green phosphor with these spectral characteristics has been prepared as sample number YBG170620-1 (521-41). The CCT of this spectrum is between 2850 K and 3250 K, nominally 3000 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0018-8
Figure 107125642-A0305-02-0018-8

下表5B表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有530nm處之峰值發射及40nm之FWHM的綠色磷光體。具有此等光譜特徵之綠色磷光體已經製備為樣本編號KB3-123-486(530-39)。此光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 5B below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED, ER6436 red phosphor, and a green phosphor with peak emission at 530 nm and a FWHM of 40 nm. A green phosphor with these spectral characteristics has been prepared as sample number KB3-123-486(530-39). The CCT of this spectrum is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0018-9
Figure 107125642-A0305-02-0018-9

下表5C表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有534nm處之峰值發射及40nm之FWHM的綠色磷光體。具有此等光譜特徵之綠色磷光體已經製備為樣本編號ELT-069(533-41)。此光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 5C below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED, ER6436 red phosphor, and a green phosphor with a peak emission at 534 nm and a FWHM of 40 nm. A green phosphor with these spectral characteristics has been prepared as sample number ELT-069(533-41). The CCT of this spectrum is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0018-10
Figure 107125642-A0305-02-0018-10

具有40nm FWHM之綠色磷光體之趨向似乎為R11在532nm之磷光體波長下具有最大值。R11值隨後隨著峰值波長增加至534nm或減小至522nm而減小。R9值趨向不僅極其依賴於綠色磷光體峰值波 長,而且依賴於CCT及duv。對於534至524nm之峰值,R9隨著duv減小且隨著CCT增加而增加。對於峰值為522nm之綠色磷光體,當CCT大約為3000 K時,R9在CCT及duv變化過程中保持極其恆定,亦對應地獲得最高R9值中之一些(R9>95)。 The trend for green phosphors with 40nm FWHM appears to be that R11 has a maximum at the phosphor wavelength of 532nm. The R11 value then decreases as the peak wavelength increases to 534 nm or decreases to 522 nm. The R9 value tends not only to be extremely dependent on the green phosphor peak wave Long and depends on CCT and duv. For the peak at 534 to 524 nm, R9 decreases with duv and increases with CCT. For the green phosphor with a peak at 522nm, when the CCT is about 3000 K, R9 remains extremely constant during CCT and duv changes, and correspondingly some of the highest R9 values are obtained (R9>95).

圖8展示用於40nm FWHM在522nm(點線)、530nm(短劃線)及534nm(實線)達到峰值之綠色磷光體發射的3000 K LED的經正規化模擬光譜。 Figure 8 shows the normalized simulated spectrum of a 3000 K LED for a 40nm FWHM with green phosphor emission peaking at 522nm (dotted line), 530nm (dashed line) and 534nm (solid line).

圖9A標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有530nm處之峰值發射之綠色磷光體。在大部分白色範圍中,CRI範圍為92至94,其隨著duv減小而增加。 9A plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 530 nm. . Across most of the white range, the CRI ranges from 92 to 94, which increases as duv decreases.

圖9B標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有528nm處之峰值發射之綠色磷光體。CRI非常穩定,其範圍為在3000K之整個白色區域中僅約1點。 9B plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 528 nm . The CRI is very stable with a range of only about 1 point in the entire white area at 3000K.

圖9C標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有526nm處之峰值發射之綠色磷光體。此曲線圖展示CRI值之嚴格分組,其與圖9B中之分組類似。 9C plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 526 nm . This graph shows a strict grouping of CRI values, similar to the grouping in Figure 9B.

圖9D標繪針對模擬磷光體轉換LED的豎軸上的duv對橫軸上的CRI,該等模擬磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有522nm處之峰值發射之綠色磷光體。在此曲線圖中,CRI隨著duv增加而增加。 Figure 9D plots duv on the vertical axis versus CRI on the horizontal axis for simulated phosphor-converted LEDs comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 522 nm . In this graph, CRI increases as duv increases.

下表6A表徵發白光磷光體轉換LED之兩個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有520nm或524nm處之峰值發射及45nm之FWHM的綠色磷光體。此等光譜之CCT介於2850 K與3250 K之間,標稱3000 K,且CRI大於90。 Table 6A below characterizes two simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 520nm or 524nm and a FWHM of 45nm. The CCT of these spectra is between 2850 K and 3250 K, nominally 3000 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0020-11
Figure 107125642-A0305-02-0020-11

下表6B表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有530nm處之峰值發射及45nm之FWHM的綠色磷光體。具有此等光譜特徵之綠色磷光體已經製備為樣本編號ELT047C(531-45)及YBG 170403-4B(530-44)。此等光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 6B below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED, ER6436 red phosphor, and a green phosphor with peak emission at 530 nm and a FWHM of 45 nm. Green phosphors with these spectral characteristics have been prepared as sample numbers ELT047C (531-45) and YBG 170403-4B (530-44). The CCT of these spectra is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0020-12
Figure 107125642-A0305-02-0020-12

此處趨向似乎為:R11在530及532nm之磷光體波長下為最大值。R11值隨後隨著峰值波長增加至534nm或減小至518nm而減小。R9值趨向不僅極其依賴於綠色磷光體峰值波長,而且依賴於CCT及duv。對於532至524nm之峰值,R9隨著duv減小且隨著CCT增加而增加。對於峰值為522及520nm之綠色磷光體,當CCT大約為3000 K時,R9在CCT及duv變化過程中保持極其恆定,亦對應地獲得最高R9值中之一些(R9>95)。 The trend here seems to be that R11 is at a maximum at the phosphor wavelengths of 530 and 532 nm. The R11 value then decreases as the peak wavelength increases to 534 nm or decreases to 518 nm. R9 values tend to be extremely dependent not only on the green phosphor peak wavelength, but also on CCT and duv. For the peak at 532 to 524 nm, R9 decreases with duv and increases with CCT. For the green phosphors with peaks at 522 and 520 nm, when the CCT is about 3000 K, R9 remains extremely constant during CCT and duv changes, and correspondingly some of the highest R9 values are obtained (R9>95).

圖10展示用於45nm FWHM在520nm(點線)、524nm(短劃線)及530nm(實線)達到峰值之綠色磷光體發射的3000 K LED的經正規化模擬光譜。 Figure 10 shows the normalized simulated spectrum of a 3000 K LED for a 45nm FWHM with green phosphor emission peaking at 520nm (dotted line), 524nm (dashed line), and 530nm (solid line).

CCT 3500 KCCT 3500K

下表7A表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有516nm、518nm或520nm處之峰值發射及35nm之FWHM的綠色磷光體。此等光譜之CCT介於3250 K與3750 K之間,標稱3500 K,且CRI大於80。 Table 7A below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 516 nm, 518 nm, or 520 nm and a FWHM of 35 nm. body. The CCT of these spectra is between 3250 K and 3750 K, nominally 3500 K, and the CRI is greater than 80.

Figure 107125642-A0305-02-0021-13
Figure 107125642-A0305-02-0021-13

下表7B表徵發白光磷光體轉換LED之模擬光譜,該發白光磷光體轉換LED包含具有457nm處之峰值發射及21nm之FWHM的藍色LED、BR102/Q紅色磷光體及具有517nm處之峰值發射及36nm之FWHM的綠色磷光體。此等光譜之CCT介於3250 K與3750 K之間,標稱3500 K。 Table 7B below characterizes the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED with a peak emission at 457 nm and a FWHM of 21 nm, a BR102/Q red phosphor, and a peak emission at 517 nm And the green phosphor of FWHM of 36nm. The CCT of these spectra is between 3250 K and 3750 K, nominally 3500 K.

Figure 107125642-A0305-02-0021-14
Figure 107125642-A0305-02-0021-14

下表7C表徵實例發白光磷光體轉換LED(樣本JM388-E3-59)之經量測光譜,該實例發白光磷光體轉換LED包含具有457nm處之峰值發射及21nm之FWHM的藍色LED、BR102/Q紅色磷光體及具有517 nm處之峰值發射及36nm之FWHM的綠色磷光體。此光譜之CCT介於3250 K與3750 K之間,標稱3500 K。 Table 7C below characterizes the measured spectrum of an example white-emitting phosphor-converted LED (sample JM388-E3-59) comprising a blue LED, BR102, with a peak emission at 457 nm and a FWHM of 21 nm. /Q red phosphor and has 517 Green phosphor with peak emission at nm and FWHM of 36 nm. The CCT of this spectrum is between 3250 K and 3750 K, nominally 3500 K.

Figure 107125642-A0305-02-0022-15
Figure 107125642-A0305-02-0022-15

如下表8中可見,例如,此處趨向似乎為R9隨著普朗克軌跡上方的距離增加,以及R9隨著CCT減少而增加。對於516nm與520nm峰值波長之間的磷光體,存在以下明顯趨向:R11增加及磷光體波長增加。表8報導發白光磷光體轉換LED之模擬光譜之所選CCT及duv的R9值,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有520nm處之峰值發射及35nm之FWHM的綠色磷光體。 As can be seen in Table 8 below, for example, the trend here appears to be that R9 increases with distance above the Planckian locus, and R9 increases with decreasing CCT. For phosphors between 516nm and 520nm peak wavelengths, there is a clear trend of increasing R11 and increasing phosphor wavelength. Table 8 reports the R9 values for selected CCT and duv for the simulated spectrum of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a peak emission at 520 nm and a FWHM of 35 nm. Green phosphor.

Figure 107125642-A0305-02-0022-16
Figure 107125642-A0305-02-0022-16

圖11展示用於35nm FWHM在520nm(點線)、518nm(實線)及516nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 11 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 35nm FWHM peaking at 520nm (dotted line), 518nm (solid line) and 516nm (dashed line).

圖12展示用於36nm FWHM在517nm達到峰值之綠色磷光體發射的3500 K LED的模擬光譜(實線)及表7C中表徵之實例磷光體轉 換LED之經量測光譜(短劃線)。 Figure 12 shows the simulated spectrum (solid line) of a 3500 K LED for green phosphor emission with a 36nm FWHM peaking at 517nm and the example phosphor conversion characterized in Table 7C. The measured spectrum (dashed line) of the LED was changed.

下表9表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有524nm、528nm或532nm處之峰值發射及40nm之FWHM的綠色磷光體。此等光譜之CCT介於3250 K與3750 K之間,標稱3500 K,且CRI大於90。 Table 9 below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a green phosphor with peak emission at 524 nm, 528 nm, or 532 nm and a FWHM of 40 nm body. The CCT of these spectra is between 3250 K and 3750 K, nominally 3500 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0023-17
Figure 107125642-A0305-02-0023-17

此處趨向似乎為R9隨著普朗克軌跡上方的距離增加,以及R9隨著CCT減少而增加。對於CCT與CRI之此特定組合,R9似乎會展示出關於528nm磷光體之相對最大值。對於524nm與532nm峰值波長之間的磷光體,存在以下明顯趨向:R11增加及磷光體波長增加。CRI對duv遵循以下預期趨向:對於具有更長波長(諸如540至532nm)之磷光體,CRI隨著duv減少而增加,其範圍為橫越大體上被視為白色之區域的4個點。CRI範圍壓縮降至約2且表明與峰值波長526及528nm之磷光體的duv無真實相關。較短波長磷光體展示更寬範圍之CRI,但具有CRI隨著duv增加而增加的相反趨向。 The trends here seem to be for R9 to increase with distance above the Planckian locus, and R9 to increase with decreasing CCT. For this particular combination of CCT and CRI, R9 appears to exhibit a relative maximum for the 528nm phosphor. For phosphors between 524nm and 532nm peak wavelengths, there is a clear trend of increasing R11 and increasing phosphor wavelength. CRI versus duv follows the expected trend: For phosphors with longer wavelengths, such as 540 to 532 nm, the CRI increases with decreasing duv over a range of 4 points across the region that is generally considered white. The CRI range compresses down to about 2 and shows no real correlation with the duv of the phosphors with peak wavelengths of 526 and 528 nm. Shorter wavelength phosphors exhibit a wider range of CRI, but have the opposite trend of CRI increasing with duv.

圖13展示用於40nm FWHM在532nm(點線)、528nm(實線)及524nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 13 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 40nm FWHM peaking at 532nm (dotted line), 528nm (solid line) and 524nm (dashed line).

下表10表徵發白光磷光體轉換LED之三個模擬光譜,該發白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有530nm、 526nm或522nm處之峰值發射及45nm之FWHM的綠色磷光體。此等光譜之CCT介於3250 K與3750 K之間,標稱3500 K,且CRI大於90。 Table 10 below characterizes three simulated spectra of a white-emitting phosphor-converted LED comprising a blue LED, an ER6436 red phosphor, and a 530nm, Green phosphor with peak emission at 526nm or 522nm and FWHM of 45nm. The CCT of these spectra is between 3250 K and 3750 K, nominally 3500 K, and the CRI is greater than 90.

Figure 107125642-A0305-02-0024-18
Figure 107125642-A0305-02-0024-18

此處趨向似乎為R9隨著普朗克軌跡上方的距離增加,以及R9隨著CCT減少而增加。對於CCT與CRI之此特定組合,R9似乎會展示出關於526nm磷光體之相對最大值。對於522nm與532nm峰值波長之間的磷光體以及具有530nm峰值波長之磷光體的略相對最大值,存在以下明顯趨向:R11增加及磷光體波長增加。 The trends here seem to be for R9 to increase with distance above the Planckian locus, and R9 to increase with decreasing CCT. For this particular combination of CCT and CRI, R9 appears to exhibit a relative maximum for the 526nm phosphor. For phosphors between 522nm and 532nm peak wavelengths and a slight relative maximum for the phosphor with a 530nm peak wavelength, there is a clear trend of increasing R11 and increasing phosphor wavelength.

圖14展示用於45nm FWHM在530nm(點線)、526nm(實線)及522nm(短劃線)達到峰值之綠色磷光體發射的3500 K LED的經正規化模擬光譜。 Figure 14 shows the normalized simulated spectrum of a 3500 K LED for green phosphor emission with a 45nm FWHM peaking at 530nm (dotted line), 526nm (solid line) and 522nm (dashed line).

圖15在橫軸上標繪針對模擬白光磷光體轉換LED的CRI及R9與綠色磷光體發射峰值波長,該等模擬白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及窄綠色磷光體。此等經模擬器件之CCT標稱地為3000 K,且duv為+0.003。綠色磷光體發射之FWHM變化。此曲線圖展示,使用較低峰值波長綠色磷光體產生較高R9值。 Figure 15 plots on the horizontal axis CRI and R9 and green phosphor emission peak wavelengths for simulated white phosphor-converted LEDs including blue LEDs, ER6436 red phosphor, and narrow green phosphor. The CCT of these simulated devices is nominally 3000 K and the duv is +0.003. FWHM variation of green phosphor emission. This graph shows that using lower peak wavelength green phosphors results in higher R9 values.

圖16標繪模擬白光磷光體轉換LED之CRI與duv,該等模擬白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有532nm之峰值波長及變化的FWHM的窄綠色磷光體。此等模擬器件之CCT標稱地為3000 K。此曲線圖展示,在綠色磷光體之此波長下,CRI大體上隨著 duv減小而增加。此趨向遵循一般公認之趨向。此外,此曲線圖展示,所獲得CRI值之範圍隨著FWHM減小而減小。 Figure 16 plots CRI versus duv for simulated white phosphor-converted LEDs comprising a blue LED, ER6436 red phosphor, and a narrow green phosphor with a peak wavelength of 532 nm and varying FWHM. The CCT of these analog devices is nominally 3000K. This graph shows that at this wavelength for the green phosphor, the CRI roughly increases with duv decreases and increases. This trend follows a generally recognized trend. Furthermore, the graph shows that the range of obtained CRI values decreases with decreasing FWHM.

圖17標繪模擬白光磷光體轉換LED之CRI與duv,該等模擬白光磷光體轉換LED包含藍色LED、ER6436紅色磷光體及具有522nm之峰值波長及變化的FWHM的窄綠色磷光體。此等模擬器件之CCT標稱地為3000 K。此曲線圖展示,在綠色磷光體之此波長下,CRI大體上隨著duv增加而增加。此趨向與一般公認之趨向相反,其中CRI大體上隨著duv增加而減小。此外,此曲線圖展示,所獲得CRI值之範圍隨著FWHM減小而減小。 Figure 17 plots CRI versus duv for simulated white phosphor-converted LEDs comprising a blue LED, ER6436 red phosphor, and a narrow green phosphor with a peak wavelength of 522 nm and varying FWHM. The CCT of these analog devices is nominally 3000K. This graph shows that at this wavelength for the green phosphor, CRI generally increases with increasing duv. This trend is opposite to the generally accepted trend, where CRI generally decreases with increasing duv. Furthermore, the graph shows that the range of obtained CRI values decreases with decreasing FWHM.

下表11表徵發白光磷光體轉換LED之若干模擬光譜,該發白光磷光體轉換LED包含具有450nm與470nm之間的峰值發射波長、具有標稱620nm峰值波長及90nm之FWHM的紅色磷光體,及具有508nm與534nm之間的峰值發射及40nm與50nm之間的FWHM的綠色磷光體。此等光譜之CCT介於2850 K與3250 K之間,標稱3000 K。 Table 11 below characterizes several simulated spectra of a white-emitting phosphor-converted LED comprising a red phosphor with a peak emission wavelength between 450 nm and 470 nm, with a nominal peak wavelength of 620 nm and a FWHM of 90 nm, and Green phosphor with peak emission between 508nm and 534nm and FWHM between 40nm and 50nm. The CCT of these spectra is between 2850 K and 3250 K, nominally 3000 K.

Figure 107125642-A0305-02-0025-19
Figure 107125642-A0305-02-0025-19
Figure 107125642-A0305-02-0026-20
Figure 107125642-A0305-02-0026-20

下表12表徵發白光磷光體轉換LED之若干模擬光譜,該發白光磷光體轉換LED包含具有430nm與455nm之間的峰值發射波長、具有標稱620nm峰值波長及90nm之FWHM的紅色磷光體,及具有504nm與524nm之間的峰值發射及35nm與50nm之間的FWHM的綠色磷光體。此等光譜之CCT介於3750 K與4250 K之間,標稱4000 K。 Table 12 below characterizes certain simulated spectra of a white-emitting phosphor-converted LED comprising a red phosphor with a peak emission wavelength between 430 nm and 455 nm, with a nominal peak wavelength of 620 nm and a FWHM of 90 nm, and Green phosphor with peak emission between 504nm and 524nm and FWHM between 35nm and 50nm. The CCT of these spectra is between 3750 K and 4250 K, nominally 4000 K.

Figure 107125642-A0305-02-0026-21
Figure 107125642-A0305-02-0026-21
Figure 107125642-A0305-02-0027-22
Figure 107125642-A0305-02-0027-22

下表13展示由申請人購買及測試之市售LED的屬性。此等 LED利用相比本文所揭示之彼等磷光體明顯更寬之黃綠磷光體,且因此不顯示發射光譜中之谷部。 Table 13 below shows the properties of commercially available LEDs purchased and tested by applicants. and so on The LEDs utilize yellow-green phosphors that are significantly broader than those disclosed herein, and thus do not exhibit valleys in the emission spectrum.

Figure 107125642-A0305-02-0028-23
Figure 107125642-A0305-02-0028-23

實例窄綠色磷光體Example Narrow Green Phosphor

KB3-170-545,517nm峰值,36nm FWHM。將0.523g Eu、0.106g CaS、0.886g Al2S3、0.174g Ga2S3、0.110g S及0.090g AlCl3研磨且接著分至真空密封之4個石英套管中。將套管一起加熱至400℃達一小時,且接著,該溫度增加至900℃且保持6小時。以每小時50℃冷卻鍋爐。將套管在惰性氛圍下打開且一起研磨以將其合併。 KB3-170-545, 517nm peak, 36nm FWHM. 0.523g Eu, 0.106g CaS, 0.886g Al2S3 , 0.174g Ga2S3 , 0.110g S and 0.090g AlCl3 were ground and then divided into 4 vacuum-sealed quartz thimbles. The jacket was heated together to 400°C for one hour, and then the temperature was increased to 900°C and held for 6 hours. Cool the boiler at 50°C per hour. The sleeves were opened under an inert atmosphere and ground together to combine them.

KB3-163-537,527nm峰值,41nm FWHM。將0.562g Eu、0.446g Al2S3、0.412g Ga2S3、0.112g S及0.075g AlCl3研磨且接著分至真空密封之4個石英套管中。將套管一起加熱至400℃達一小時,且接著,該溫度增加至900℃且保持6小時。以每小時50℃冷卻鍋爐。將套管在惰性氛圍下打開且一起研磨其內含物以將其合併。 KB3-163-537, 527nm peak, 41nm FWHM. 0.562g Eu, 0.446g Al2S3 , 0.412g Ga2S3 , 0.112g S and 0.075g AlCl3 were ground and then divided into 4 vacuum-sealed quartz thimbles. The jacket was heated together to 400°C for one hour, and then the temperature was increased to 900°C and held for 6 hours. Cool the boiler at 50°C per hour. The cannula was opened under an inert atmosphere and its contents were milled together to combine them.

KB3-117-475a,529nm峰值,41nm FWHM。將0.225g Eu、0.166g Al2S3、0.209g Ga2S3、0.020g S及0.045g AlCl3研磨且接著分至真空密封之2個石英套管中。將套管中之一者加熱至400℃達一小時,且接著,該溫度增加至900℃且保持6小時。以每小時50℃冷卻鍋爐。 KB3-117-475a, 529nm peak, 41nm FWHM. 0.225 g Eu, 0.166 g Al 2 S 3 , 0.209 g Ga 2 S 3 , 0.020 g S and 0.045 g AlCl 3 were ground and then divided into 2 vacuum-sealed quartz thimbles. One of the thimbles was heated to 400°C for one hour, and then the temperature was increased to 900°C and held for 6 hours. Cool the boiler at 50°C per hour.

KB3-123-486,530nm峰值,39nm FWHM。將0.562g Eu、0.416g Al2S3、0.522g Ga2S3、0.050g S及0.115g AlCl3研磨且接著分至真空密封之4個石英套管中。將套管一起加熱至400℃達一小時,且接著,該溫度增加至900℃且保持6小時。以每小時50℃冷卻鍋爐。將套管在惰性氛圍下打開且一起研磨其內含物以將其合併。 KB3-123-486, 530nm peak, 39nm FWHM. 0.562 g Eu, 0.416 g Al 2 S 3 , 0.522 g Ga 2 S 3 , 0.050 g S, and 0.115 g AlCl 3 were ground and then divided into 4 vacuum-sealed quartz thimbles. The jacket was heated together to 400°C for one hour, and then the temperature was increased to 900°C and held for 6 hours. Cool the boiler at 50°C per hour. The cannula was opened under an inert atmosphere and its contents were milled together to combine them.

KB3-117-476a,539nm峰值,42nm FWHM。將0.215g Eu、0.115g Al2S3、0.270g Ga2S3、0.020g S及0.045g AlCl3研磨且接著分至真空密封之2個石英套管中。將套管中之一者加熱至400℃達一小時,且接著,該溫度增加至900℃且保持6小時。以每小時50℃冷卻鍋爐。 KB3-117-476a, 539nm peak, 42nm FWHM. 0.215 g Eu, 0.115 g Al 2 S 3 , 0.270 g Ga 2 S 3 , 0.020 g S and 0.045 g AlCl 3 were ground and then divided into 2 vacuum-sealed quartz thimbles. One of the thimbles was heated to 400°C for one hour, and then the temperature was increased to 900°C and held for 6 hours. Cool the boiler at 50°C per hour.

KB3-080-430,528nm峰值,47nm FWHM。將0.006g Mg、0.113g SrS、0.010g Eu、0.023g Al、0.198g Ga2S3及0.071g S研磨且放入石英套管中並真空密封。將樣本一起加熱至400℃達6小時,且接著,該溫度增加至800℃且保持12小時。在6小時內冷卻鍋爐。將樣本在惰性氛圍下打開,研磨且密封於新石英套管中。將其加熱至950℃達24小時,且經6小時冷卻至室溫。 KB3-080-430, 528nm peak, 47nm FWHM. 0.006g Mg, 0.113g SrS, 0.010g Eu, 0.023g Al, 0.198g Ga2S3 and 0.071g S were ground and placed in a quartz thimble and vacuum sealed. The samples were heated together to 400°C for 6 hours, and then the temperature was increased to 800°C and held for 12 hours. Cool the boiler within 6 hours. The samples were opened under an inert atmosphere, ground and sealed in new quartz sleeves. It was heated to 950°C for 24 hours and cooled to room temperature over 6 hours.

KB3-121-481,533nm峰值,44nm FWHM。將0.117g Eu、0.048g Al2S3、0.114g Ga2S3、0.031g S及0.023g AlCl3研磨且接著真空密封於石英套管中。將樣本加熱至400℃達一小時,且接著,該溫度增加至850℃且保持6小時。以每小時25℃冷卻鍋爐。 KB3-121-481, 533nm peak, 44nm FWHM. 0.117 g Eu, 0.048 g Al 2 S 3 , 0.114 g Ga 2 S 3 , 0.031 g S, and 0.023 g AlCl 3 were ground and then vacuum sealed in a quartz sleeve. The sample was heated to 400°C for one hour, and then the temperature was increased to 850°C and held for 6 hours. Cool the boiler at 25°C per hour.

YBG170620-1,521nm峰值,41nm FWHM。將形成Eu(Al1.85Ga0.26)S4.37之化學計量之Eu、Al、Ga2S3及15wt%過量之S在手套工作箱中在研缽中用研杵徹底研磨且真空密封於石英套管中。將混合物置放於乾燥矽石套管中,該等矽石套管經抽空且以約5吋之長度密封。在箱式鍋爐中進行反應。將溫度升高至400℃且保持2小時,且再次升高至 900℃並保持8至12個小時,隨後冷卻至室溫,持續6小時。 YBG170620-1, 521nm peak, 41nm FWHM. The stoichiometric Eu, Al, Ga2S3 and 15 wt % excess S to form Eu( Al1.85Ga0.26 ) S4.37 were thoroughly ground in a mortar and pestle in a glove box and vacuum sealed in a quartz sleeve middle. The mixture was placed in dry silica sleeves that were evacuated and sealed at a length of approximately 5 inches. The reaction was carried out in a box boiler. The temperature was raised to 400°C and held for 2 hours, and again to 900°C and held for 8 to 12 hours, followed by cooling to room temperature for 6 hours.

ELTEAGS-012-B-2,516nm峰值,36nm FWHM。以化學計量合併試劑CaS、Eu、Al及S以獲得標稱組成CaAl2.7S5.05:8.5%Eu,並將其裝進水平管形爐中之氧化鋁坩堝中。在用Ar進行30分鐘吹掃後,將混合物加熱至400℃,此時H2S氣體流動開始。在處於400℃下1小時後,將鍋爐加熱至1000℃,持續2小時。在冷卻後,關掉H2S氣體且在流動的Ar下將產物冷卻至室溫。 ELTEAGS-012-B-2, 516nm peak, 36nm FWHM. The reagents CaS, Eu, Al and S were combined stoichiometrically to obtain a nominal composition CaAl 2.7 S 5.05 : 8.5% Eu and charged into an alumina crucible in a horizontal tube furnace. After a 30 min purge with Ar, the mixture was heated to 400°C, at which point H2S gas flow was started. After 1 hour at 400°C, the boiler was heated to 1000°C for 2 hours. After cooling, the H2S gas was turned off and the product was cooled to room temperature under flowing Ar.

ELTAlS-067-B,516nm峰值,35nm FWHM。藉由以化學計量比率合併Eu、Al2S3、Ga2S3及S來製備Eu(Al1-xGax)2.7S5.05+y。在燃燒之前添加3wt% AlCl3及10mg過量S。將混合物密封於抽空的矽石套管中且加熱至400℃,持續2小時,隨後加熱至850℃,持續6小時。以50℃/h之速率將樣本冷卻至室溫。 ELTA 1S-067-B, 516nm peak, 35nm FWHM. Eu(Al 1-x Ga x ) 2.7 S 5.05+y was prepared by combining Eu, Al 2 S 3 , Ga 2 S 3 and S in a stoichiometric ratio. 3 wt% AlCl 3 and 10 mg excess S were added before combustion. The mixture was sealed in an evacuated silica thimble and heated to 400°C for 2 hours, then to 850°C for 6 hours. The sample was cooled to room temperature at a rate of 50°C/h.

ELTAlS-073,520nm峰值,36nm FWHM。以化學計量組合CaS、Eu、Al及S,以獲得標稱組成CaAl2.7S5.05:8.5%Eu。將混合物在Ar下以研缽及研杵來進行均勻化,隨後裝進碳包矽石套管中,該碳包矽石套管隨後經抽空且真空密封。藉由逐步加熱方法進行合成:290℃(17h),770℃(24h),870℃(24h)及經20h緩慢冷卻。將產物回收,且在返回至新型碳包矽石套管之前將其手動地再研磨並加熱至400℃(6h)及1000℃(3h)。 ELTA 1S-073, 520nm peak, 36nm FWHM. CaS, Eu, Al and S are combined stoichiometrically to obtain a nominal composition CaAl 2.7 S 5.05 : 8.5%Eu. The mixture was homogenized under Ar with a mortar and pestle, then packed into a silica-carbide thimble which was then evacuated and vacuum-sealed. The synthesis was carried out by a stepwise heating method: 290°C (17h), 770°C (24h), 870°C (24h) and slow cooling over 20h. The product was recovered and manually reground and heated to 400°C (6h) and 1000°C (3h) before being returned to a new silica-carbonite sleeve.

ELTEAGS-013-A-2,520nm峰值,40nm FWHM。以化學計量方式合併CaS、EuF3、Al、Ga2S3及S,獲得標靶組合物CaAl2.565Ga0.135S5.05:8.5%Eu(5% Ga)。將樣本在Ar下均勻化,隨後裝進氧化鋁坩堝中且置放於水平管形爐中。在用流動的Ar進行30分鐘吹掃 後,將混合物加熱至400℃,此時H2S氣體流動開始。在保持於400℃下達1小時之後,將樣本加熱至1000℃,持續2小時。在經2小時冷卻至室溫期間在800℃下關掉H2S氣體。 ELTEAGS-013-A-2, 520nm peak, 40nm FWHM. CaS, EuF 3 , Al, Ga 2 S 3 and S were combined stoichiometrically to obtain the target composition CaAl 2.565 Ga 0.135 S 5.05 : 8.5%Eu(5%Ga). The samples were homogenized under Ar, then loaded into alumina crucibles and placed in a horizontal tube furnace. After purging with flowing Ar for 30 min, the mixture was heated to 400 °C, at which time H2S gas flow was started. After being held at 400°C for 1 hour, the sample was heated to 1000°C for 2 hours. The H2S gas was turned off at 800°C during cooling to room temperature over 2 hours.

ELTEAGS-016-A-2,522nm峰值,39nm FWHM。在流動的H2S/Ar下自化學計量之CaS、EuF3、Al、Ga2S3及S製備CaAl2.43Ga0.27S5.05:8.5%Eu。將樣本在Ar氛圍下均勻化,隨後裝進氧化鋁坩堝中且置放於水平管形爐中。在用流動的Ar進行1小時吹掃後,將混合物加熱至400℃,持續1小時,此時H2S氣體流動開始。隨後將樣本加熱至1000℃,持續2小時,且冷卻至室溫。在冷卻期間在800℃下關掉H2S氣體。 ELTEAGS-016-A-2, 522nm peak, 39nm FWHM. CaAl 2.43 Ga 0.27 S 5.05 : 8.5% Eu was prepared from stoichiometric CaS, EuF 3 , Al, Ga 2 S 3 and S under flowing H 2 S/Ar. The samples were homogenized under Ar atmosphere, then loaded into alumina crucibles and placed in a horizontal tube furnace. After purging with flowing Ar for 1 h, the mixture was heated to 400 °C for 1 h at which time H2S gas flow was started. The samples were then heated to 1000°C for 2 hours and cooled to room temperature. The H2S gas was turned off at 800°C during cooling.

ELTAlS-035-G,33nm峰值,1nm FWHM。藉由在Ar下以化學計量合併Eu、Al2S3、Ga2S3及S來製備EuAlGaS4。將混合物密封於抽空的石英套管中且加熱至400℃(6h),隨後加熱至800℃(12h)。在研磨產物及添加50mg過量S後,在第二加熱處理後接著加熱至400℃(6h),隨後加熱至1000℃(6h)。 ELTA 1S-035-G, 33nm peak, 1nm FWHM. EuAlGaS4 was prepared by stoichiometrically combining Eu , Al2S3 , Ga2S3 and S under Ar. The mixture was sealed in an evacuated quartz sleeve and heated to 400°C (6h), then to 800°C (12h). After trituration of the product and addition of 50 mg excess S, the second heat treatment was followed by heating to 400° C. (6 h), followed by heating to 1000° C. (6 h).

ELTAlS-069,533nm峰值,41nm FWHM。以化學計量方式合併試劑Eu、Al2S3、Ga2S3及S以製備EuAl1.35Ga1.35S5.05。在Ar氛圍下以研缽及研杵來進行混合物之均勻化。將3wt% AlCl3用作助熔劑且將樣本密封於經抽空石英套管中。藉由將石英安瓿加熱至400℃(1h),隨後加熱至900℃(6h)來進行反應。回收產物且將其手動地用研缽及研杵研磨。 ELTA 1S-069, 533nm peak, 41nm FWHM. The reagents Eu, Al 2 S 3 , Ga 2 S 3 and S were combined stoichiometrically to produce EuAl 1.35 Ga 1.35 S 5.05 . Homogenization of the mixture was performed with a mortar and pestle under Ar atmosphere. 3 wt% AlCl3 was used as flux and the samples were sealed in evacuated quartz sleeves. The reaction was carried out by heating the quartz ampoule to 400 °C (1 h) and then to 900 °C (6 h). The product was recovered and ground manually with a mortar and pestle.

ELTAlS-036-F,528nm峰值,45nm FWHM。自化學計量之Eu、Al2S3、Ga金屬及S合成EuAl0.9Ga1.1S4。將反應物在Ar下混合, 隨後密封於經抽空石英套管中。在兩次熱處理後獲得最終產物。熱1:400℃(12h),800℃(12h)。熱2:400℃(12h),1000℃(6h)。將樣本用50mg過量S再研磨且在中間步驟期間密封於經抽空石英套管中。 ELTA 1S-036-F, 528nm peak, 45nm FWHM. EuAl 0.9 Ga 1.1 S 4 was synthesized from stoichiometric Eu, Al 2 S 3 , Ga metal and S. The reactants were mixed under Ar and then sealed in an evacuated quartz tube. The final product is obtained after two heat treatments. Heat 1: 400°C (12h), 800°C (12h). Heat 2: 400°C (12h), 1000°C (6h). Samples were reground with 50 mg excess S and sealed in evacuated quartz sleeves during intermediate steps.

ELTAlS-036-E,534nm峰值,45nm FWHM。自化學計量之Eu、Al2S3、Ga金屬及S合成EuAl0.8Ga1.2S4。將反應物在Ar下混合,隨後密封於經抽空石英套管中。在兩次熱處理後獲得最終產物。熱1:400℃(12h),800℃(12h)。熱2:400℃(12h),1000℃(6h)。將樣本用50mg過量S再研磨且在中間步驟期間密封於經抽空石英套管中。 ELTA 1S-036-E, 534nm peak, 45nm FWHM. EuAl 0.8 Ga 1.2 S 4 was synthesized from stoichiometric Eu, Al 2 S 3 , Ga metal and S. The reactants were mixed under Ar and sealed in an evacuated quartz tube. The final product is obtained after two heat treatments. Heat 1: 400°C (12h), 800°C (12h). Heat 2: 400°C (12h), 1000°C (6h). Samples were reground with 50 mg excess S and sealed in evacuated quartz sleeves during intermediate steps.

ELTAlS-042E及F,536nm峰值,45nm FWHM。自化學計量之Eu、Al2S3、Ga2S3及S之預燃燒混合物合成Eu(Al0.4Ga0.6)2S4。在產物分成兩個部分且密封至兩個經抽空石英套管中之前,將其與0.12g I2(15wt%)及0.16g S(20wt%)合併。將兩個樣本加熱至950℃(2h),隨後於空氣或水中淬滅。 ELTA 1S-042E and F, 536nm peak, 45nm FWHM. Eu(Al 0.4 Ga 0.6 ) 2 S 4 was synthesized from a stoichiometric pre-combustion mixture of Eu, Al 2 S 3 , Ga 2 S 3 and S. The product was combined with 0.12 g I2 (15 wt%) and 0.16 g S (20 wt%) before being divided into two parts and sealed into two evacuated quartz sleeves. Both samples were heated to 950°C (2h) and subsequently quenched in air or water.

ELTAlS-037-B,50nm峰值,51nm FWHM。藉由以化學計量合併CaS、Eu、Al2S3、Ga2S3及S來合成CaAl0.675Ga2.025S5.05:8.5%Eu。將混合物在Ar下使用研缽及研杵來進行均勻化,隨後裝進碳包矽石套管中,該碳包矽石套管隨後經抽空且真空密封。藉由逐步加熱方法進行合成:290℃(17h),770℃(24h),870℃(24h)及經9h冷卻至室溫。將產物回收,且在添加至另一碳包矽石套管之前用50mg S將其手動地再研磨並加熱至400℃(6h)及1000℃(3h)。 ELTA 1S-037-B, 50nm peak, 51nm FWHM. CaAl 0.675 Ga 2.025 S 5.05 : 8.5% Eu was synthesized by combining CaS, Eu, Al 2 S 3 , Ga 2 S 3 and S stoichiometrically. The mixture was homogenized under Ar using a mortar and pestle, then packed into a silica-carbide thimble which was then evacuated and vacuum-sealed. Synthesis was carried out by a stepwise heating method: 290°C (17h), 770°C (24h), 870°C (24h) and cooling to room temperature over 9h. The product was recovered and manually reground with 50 mg S and heated to 400°C (6h) and 1000°C (3h) before adding to another silica-carbon-coated thimble.

藉由合併Dow Corning OE-65502部分矽酮、紅色磷光體BR102/Q及綠色磷光體(諸如KB3-163-537)來形成磷光體漿料。使用此漿料之部分來製造磷光體轉換LED且將其應用於來自Power Opto Co.之2835 PLCC包裝;在大約100℃下將矽酮固化隔夜。 The phosphor paste is formed by combining Dow Corning OE-65502 part silicone, red phosphor BR102/Q and green phosphor such as KB3-163-537. A portion of this paste was used to fabricate phosphor converted LEDs and applied to 2835 from Power Opto Co. PLCC packaging; cure the silicone overnight at approximately 100°C.

在以下經編號之條款中描述各種實施例。 Various embodiments are described in the following numbered clauses.

條款1.一種發光器件,其包含:發射藍光之半導體光源;第一磷光體,其經佈置為藉由該半導體光源所發射之藍光激發,並發射具有約500nm至約550nm下之峰值發射及約30nm至約50nm之半高全寬的綠光以作為回應;及第二磷光體,其經佈置為藉由該半導體光源所發射之藍光激發,並發射具有小於或等於約635nm之波長下的峰值發射的紅光作為回應;其中來自該發光器件之總體發射光譜具有在約550nm與約580nm之間的凹陷,且該凹陷中之最小強度大於或等於在約400nm至約700nm之範圍內之總體發射光譜中之最大強度的約25%且小於或等於其之約75%。 Clause 1. A light emitting device comprising: a semiconductor light source emitting blue light; a first phosphor arranged to be excited by the blue light emitted by the semiconductor light source and emitting a peak emission having a peak emission at about 500 nm to about 550 nm and about Green light having a full width at half maximum of 30nm to about 50nm in response; and a second phosphor arranged to be excited by blue light emitted by the semiconductor light source and emitting having a peak emission at a wavelength less than or equal to about 635nm Red light in response; wherein the bulk emission spectrum from the light emitting device has a dip between about 550 nm and about 580 nm, and the minimum intensity in the dip is greater than or equal to in the bulk emission spectrum in the range of about 400 nm to about 700 nm About 25% and less than or equal to about 75% of its maximum strength.

條款2.如條款1之發光器件,其中來自該發光器件之約550nm與約580nm之間的總體發射光譜的最小值具有最小強度,其大於或等於約30%、大於或等於約35%、大於或等於約40%、大於或等於約45%、大於或等於約50%、大於或等於約55%、大於或等於約60%、或大於或等於65%的在約400nm至約700nm之範圍內的總體發射光譜中的最大強度。 Clause 2. The light emitting device of Clause 1, wherein the minimum value from the overall emission spectrum of the light emitting device between about 550 nm and about 580 nm has a minimum intensity that is greater than or equal to about 30%, greater than or equal to about 35%, greater than or equal to about 40%, greater than or equal to about 45%, greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, or greater than or equal to 65% in the range of about 400nm to about 700nm The maximum intensity in the overall emission spectrum of .

條款3.如條款1或條款2之發光器件,其中由半導體光源發射之藍光具有約430nm至約465nm下之峰值及約10nm至約35nm的半高全寬。 Item 3. The light emitting device of Item 1 or Item 2, wherein the blue light emitted by the semiconductor light source has a peak at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm.

條款4.如條款1至3中任一項之發光器件,其中由第一磷光體發射之綠光具有半高全寬,其小於或等於約45nm、小於或等於約40 nm,或小於或等於約35nm。 Clause 4. The light emitting device according to any one of clauses 1 to 3, wherein the green light emitted by the first phosphor has a full width at half maximum which is less than or equal to about 45 nm, less than or equal to about 40 nm nm, or less than or equal to about 35 nm.

條款5.如條款1至4中任一項之發光器件,其中由第二磷光體發射之紅光具有約70nm至約100nm之半高全寬。 Clause 5. The light emitting device of any one of clauses 1 to 4, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm.

條款6.如條款1至5中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約40、大於或等於約50、大於或等於約60、大於或等於約70、大於或等於約80、大於或等於約90、或大於或等於約95的R9顯色值。 Clause 6. The light emitting device of any one of Clauses 1 to 5, wherein the overall emission spectrum from the light emitting device has about 40 or more, about 50 or more, about 60 or more, about 70 or more, about 70 or more, Or an R9 color rendering value of about 80, greater than or equal to about 90, or greater than or equal to about 95.

條款7.如條款1至6中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約80、大於或等於約85、大於或等於約90、或大於或等於約95的CRI。 Clause 7. The light emitting device of any one of clauses 1 to 6, wherein the overall emission spectrum from the light emitting device has a value of about 80 or greater, about 85 or greater, about 90 or greater, or about 95 or greater CRI.

條款8.如條款1至7中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約280的輻射發光效率。 Clause 8. The light emitting device of any one of clauses 1 to 7, wherein the overall emission spectrum from the light emitting device has a radiant luminous efficacy of greater than or equal to about 280.

條款9.如條款1至8中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約50的R9顯色值及大於或等於約300之輻射發光效率。 Clause 9. The light emitting device of any one of Clauses 1 to 8, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of about 50 or greater and a radiant luminous efficacy of about 300 or more.

條款10. 如條款1至9中任一項之發光器件,其中發光器件不包含發射具有大於或等於約635nm之峰值發射之光的磷光體。 Clause 10. The light emitting device of any one of clauses 1 to 9, wherein the light emitting device does not comprise a phosphor that emits light having a peak emission greater than or equal to about 635 nm.

條款11. 如條款1之發光器件,其中:第一磷光體發射具有處於約500nm至約540nm之峰值發射之綠光;及來自發光器件之總體發射光譜具有大於或等於約40之R9顯色值。 Clause 11. The light emitting device of Clause 1, wherein: the first phosphor emits green light having a peak emission at about 500 nm to about 540 nm; and the overall emission spectrum from the light emitting device has an R9 color rendering value of greater than or equal to about 40 .

條款12. 如條款11之發光器件,其中第一磷光體發射具有處於約520nm至約540nm下之峰值發射的綠光。 Clause 12. The light emitting device of Clause 11, wherein the first phosphor emits green light having a peak emission at about 520 nm to about 540 nm.

條款13. 如條款11或條款12之發光器件,其中來自該發光器件之約550nm與約580nm之間的總體發射光譜的最小值具有最小強度,其大於或等於約30%、大於或等於約35%、大於或等於約40%、大於或等於約45%、大於或等於約50%、大於或等於約55%、大於或等於約60%、或大於或等於65%的在約400nm至約700nm之範圍內的總體發射光譜中的最大強度。 Clause 13. The light emitting device of clause 11 or clause 12, wherein the minimum value of the overall emission spectrum from the light emitting device between about 550 nm and about 580 nm has a minimum intensity that is greater than or equal to about 30%, greater than or equal to about 35% %, greater than or equal to about 40%, greater than or equal to about 45%, greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, or greater than or equal to 65% at about 400nm to about 700nm The maximum intensity in the overall emission spectrum within the range.

條款14. 如條款11至13中任一項之發光器件,其中由半導體光源發射之藍光具有約430nm至約465nm下之峰值及約10nm至約35nm的半高全寬。 Item 14. The light emitting device of any one of Items 11 to 13, wherein the blue light emitted by the semiconductor light source has a peak at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm.

條款15. 如條款11至14中任一項之發光器件,其中由第一磷光體發射之綠光具有小於或等於約45nm、小於或等於約40nm,或小於或等於約35nm的半高全寬。 Clause 15. The light emitting device of any one of clauses 11 to 14, wherein the green light emitted by the first phosphor has a full width at half maximum of less than or equal to about 45 nm, less than or equal to about 40 nm, or less than or equal to about 35 nm.

條款16. 如條款11至15中任一項之發光器件,其中由第二磷光體發射之紅光具有約70nm至約100nm之半高全寬。 Clause 16. The light emitting device of any one of Clauses 11 to 15, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm.

條款17. 如條款11至16中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約50、大於或等於約60、大於或等於約70、大於或等於約80、大於或等於約90、或大於或等於約95的R9顯色值。 Clause 17. The light emitting device of any one of clauses 11 to 16, wherein the overall emission spectrum from the light emitting device has about 50 or more, about 60 or more, about 70 or more, about 80 or more, about 80 or more, Or an R9 color rendering value equal to about 90, or greater than or equal to about 95.

條款18. 如條款11至17中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約80、大於或等於約85、大於或等於約90、或大於或等於約95的CRI。 Clause 18. The light emitting device of any one of clauses 11 to 17, wherein the overall emission spectrum from the light emitting device has a value of about 80 or greater, about 85 or greater, about 90 or greater, or about 95 or greater CRI.

條款19. 如條款11至18中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約280的輻射發光效率。 Clause 19. The light emitting device of any one of clauses 11 to 18, wherein the overall emission spectrum from the light emitting device has a radiant luminous efficacy of greater than or equal to about 280.

條款20. 如條款11至19中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約50的R9顯色值及大於或等於約300之輻射發光效率。 Clause 20. The light emitting device of any one of Clauses 11 to 19, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of about 50 or greater and a radiant luminous efficacy of about 300 or more.

條款21. 如條款11至20中任一項之發光器件,其中發光器件不包含發射具有大於或等於約635nm之峰值發射之光的磷光體。 Clause 21. The light emitting device of any one of clauses 11 to 20, wherein the light emitting device does not comprise a phosphor that emits light having a peak emission greater than or equal to about 635 nm.

條款22. 如條款1之發光器件,其中:第一磷光體發射具有處於約500nm至約540nm之峰值發射之綠光;第二磷光體發射具有小於或等於約620nm之峰值發射之綠光;及來自發光器件之總體發射光譜具有大於或等於約0之R9顯色值。 Clause 22. The light emitting device of Clause 1, wherein: the first phosphor emits green light with a peak emission at about 500 nm to about 540 nm; the second phosphor emits green light with a peak emission less than or equal to about 620 nm; and The overall emission spectrum from the light emitting device has an R9 color rendering value greater than or equal to about zero.

條款23. 如條款22之發光器件,其中來自該發光器件之約550nm與約580nm之間的總體發射光譜的最小值具有最小強度,其大於或等於約30%、大於或等於約35%、大於或等於約40%、大於或等於約45%、大於或等於約50%、大於或等於約55%、大於或等於約60%、或大於或等於65%的在約400nm至約700nm之範圍內的總體發射光譜中的最大強度。 Clause 23. The light emitting device of Clause 22, wherein a minimum of the overall emission spectrum from the light emitting device between about 550 nm and about 580 nm has a minimum intensity that is greater than or equal to about 30%, greater than or equal to about 35%, greater than or equal to about 40%, greater than or equal to about 45%, greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, or greater than or equal to 65% in the range of about 400nm to about 700nm The maximum intensity in the overall emission spectrum of .

條款24. 如條款22或條款23之發光器件,其中由半導體光源發射之藍光具有約430nm至約465nm下之峰值及約10nm至約35nm的半高全寬。 Item 24. The light emitting device of Item 22 or Item 23, wherein the blue light emitted by the semiconductor light source has a peak at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm.

條款25. 如條款22至24中任一項之發光器件,其中由第一磷光體發射之綠光具有小於或等於約45nm、小於或等於約40nm,或小於或等於約35nm的半高全寬。 Clause 25. The light emitting device of any one of clauses 22 to 24, wherein the green light emitted by the first phosphor has a full width at half maximum of less than or equal to about 45 nm, less than or equal to about 40 nm, or less than or equal to about 35 nm.

條款26. 如條款22至25中任一項之發光器件,其中由第二磷光體發射之紅光具有約70nm至約100nm之半高全寬。 Clause 26. The light emitting device of any one of clauses 22 to 25, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm.

條款27. 如條款22至26中任一項之發光器件,其中來自該發光器件之總體發射光譜具有大於或等於約10、大於或等於約20、大於或等於約30、大於或等於約40、大於或等於約50、大於或等於約60、大於或等於約70、大於或等於約80、大於或等於約90、或大於或等於95的R9顯色值。 Clause 27. The light emitting device of any one of clauses 22 to 26, wherein the overall emission spectrum from the light emitting device has about 10 or more, about 20 or more, about 30 or more, about 40 or more, An R9 color rendering value of about 50 or greater, about 60 or greater, about 70 or greater, about 80 or greater, about 90 or greater, or 95 or greater.

條款28. 如條款22至27中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約80、大於或等於約85、大於或等於約90、或大於或等於約95的CRI。 Clause 28. The light emitting device of any one of clauses 22 to 27, wherein the overall emission spectrum from the light emitting device has a value of about 80 or greater, about 85 or greater, about 90 or greater, or about 95 or greater. CRI.

條款29. 如條款22至28中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約280的輻射發光效率。 Clause 29. The light emitting device of any one of clauses 22 to 28, wherein the overall emission spectrum from the light emitting device has a radiative luminous efficacy of greater than or equal to about 280.

條款30. 如條款22至29中任一項之發光器件,其中來自發光器件之總體發射光譜具有大於或等於約50的R9顯色值及大於或等於約300之輻射發光效率。 Clause 30. The light emitting device of any one of clauses 22 to 29, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of about 50 or greater and a radiant luminous efficacy of about 300 or more.

條款31. 如條款22至30中任一項之發光器件,其中發光器件不包含發射具有大於或等於約635nm之峰值發射之光的磷光體。 Clause 31. The light emitting device of any one of clauses 22 to 30, wherein the light emitting device does not comprise a phosphor that emits light having a peak emission greater than or equal to about 635 nm.

條款32. 如條款1至31中任一項之發光器件,其中該第一磷光體不包含量子點,或第二磷光體不包含量子點,或第一磷光體不包含量子點且第二磷光體不包含量子點。 Clause 32. The light emitting device of any one of clauses 1 to 31, wherein the first phosphor does not comprise quantum dots, or the second phosphor does not comprise quantum dots, or the first phosphor does not comprise quantum dots and the second phosphor The body does not contain quantum dots.

條款33. 如條款1至31中任一項之發光器件,其中該第一磷光體包含量子點,或第二磷光體包含量子點,或第一磷光體及第二磷光體包含量子點。 Clause 33. The light emitting device of any one of Clauses 1 to 31, wherein the first phosphor comprises quantum dots, or the second phosphor comprises quantum dots, or the first phosphor and the second phosphor comprise quantum dots.

條款34. 如條款1至31中任一項之發光器件,其中第一磷光體係直接安置於半導體光源上。 Clause 34. The light emitting device according to any one of clauses 1 to 31, wherein the first phosphorescent system is arranged directly on the semiconductor light source.

條款35. 如條款1至34中任一項之發光器件,其中發光器件不包含產生約550nm與約580nm或約590nm之間的凹陷之濾光片。 Clause 35. The light emitting device of any one of clauses 1 to 34, wherein the light emitting device does not comprise a filter that creates a recess between about 550nm and about 580nm or about 590nm.

本發明為說明性的但並非限制。鑒於本發明之進一步修改將對熟習此項技術者顯而易見,且意欲處於所附申請專利範圍之範疇內。舉例而言,如本文所描述之發光器件可視情況包含以可見光譜之綠色或紅色部分發射之量子點。可適合於此類用途之量子點包括(例如)具有硒化鎘芯及硫化鎘與硫化鋅殼之量子點,及具有磷化銦芯與硫化鋅殼的量子點。發射峰值波長主要藉由量子點之尺寸測定。對於硒化鎘,約2.5奈米之直徑產生綠光發射,而約6nm之直徑產生紅光發射(參見例如http://www.nn-labs.com/wp-content/uploads/2017/06/CSE-Tech-Specs.pdf)。對於磷化銦,約7nm之直徑產生發綠光之量子點,而約15nm之直徑產生發紅光之量子點(參見例如Journal of Nanomaterials第2012卷,文章ID 869284,11頁doi:10.1155/2012/869284)。 The present invention is illustrative and not limiting. Further modifications in view of the present invention will be apparent to those skilled in the art and are intended to be within the scope of the appended claims. For example, a light emitting device as described herein can optionally include quantum dots that emit in the green or red portion of the visible spectrum. Quantum dots that may be suitable for such applications include, for example, quantum dots with a cadmium selenide core and a cadmium sulfide and zinc sulfide shell, and quantum dots with an indium phosphide core and a zinc sulfide shell. The emission peak wavelength is mainly determined by the size of the quantum dots. For cadmium selenide, a diameter of about 2.5 nm produces green emission, while a diameter of about 6 nm produces red emission (see e.g. http://www.nn-labs.com/wp-content/uploads/2017/06/ CSE-Tech-Specs.pdf). For indium phosphide, a diameter of about 7 nm yields green-emitting quantum dots, while a diameter of about 15 nm yields red-emitting quantum dots (see e.g. Journal of Nanomaterials vol. 2012, article ID 869284, page 11 doi: 10.1155/2012 /869284).

Claims (30)

一種發光器件,其包含: 發射藍光之半導體光源; 第一磷光體,其經佈置為藉由該半導體光源所發射之該藍光激發,並發射具有約500 nm至約550 nm下之峰值發射及約30 nm至約50 nm之半高全寬的綠光作為回應;及 第二磷光體,其經佈置為藉由該半導體光源所發射之該藍光激發,並發射具有小於或等於約635 nm之波長下的峰值發射的紅光作為回應; 其中來自該發光器件之總體發射光譜具有在約550 nm與約580 nm之間的凹陷,且該凹陷中之最小強度大於或等於在約400 nm至約700 nm之範圍內之總體發射光譜中之最大強度的約25%且小於或等於其之約75%。A light emitting device comprising: a semiconductor light source emitting blue light; a first phosphor arranged to be excited by the blue light emitted by the semiconductor light source, and emit a peak emission having a peak emission of about 500 nm to about 550 nm and about Green light having a full width at half maximum of 30 nm to about 50 nm in response; and a second phosphor arranged to be excited by the blue light emitted by the semiconductor light source and emit light having a wavelength less than or equal to about 635 nm peak emitted red light in response; wherein the overall emission spectrum from the light emitting device has a dip between about 550 nm and about 580 nm, and the minimum intensity in the dip is greater than or equal to between about 400 nm to about 700 nm About 25% and less than or equal to about 75% of the maximum intensity in the overall emission spectrum within the range. 如請求項1之發光器件,其中由該半導體光源發射之該藍光具有處於約430 nm至約465 nm之峰值及約10 nm至約35 nm之半高全寬。The light emitting device according to claim 1, wherein the blue light emitted by the semiconductor light source has a peak value at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm. 如請求項1之發光器件,其中由該第一磷光體發射之該綠光具有小於或等於約45 nm之半高全寬。The light emitting device of claim 1, wherein the green light emitted by the first phosphor has a full width at half maximum of less than or equal to about 45 nm. 如請求項1之發光器件,其中由該第二磷光體發射之該紅光具有約70 nm至約100 nm之半高全寬。The light emitting device according to claim 1, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm. 如請求項1之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約40之R9顯色值。The light emitting device of claim 1, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of greater than or equal to about 40. 如請求項1之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約80之CRI。The light emitting device of claim 1, wherein the overall emission spectrum from the light emitting device has a CRI of about 80 or greater. 如請求項1之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約280之輻射發光效率。The light emitting device of claim 1, wherein the overall emission spectrum from the light emitting device has a radiant luminous efficacy of greater than or equal to about 280. 如請求項1之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約50之R9顯色值及大於或等於約300之輻射發光效率。The light emitting device of claim 1, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of greater than or equal to about 50 and a radiation luminous efficacy of greater than or equal to about 300. 如請求項1之發光器件,其中該發光器件不包含發射具有大於或等於約635 nm之峰值發射的光的磷光體。The light emitting device of claim 1, wherein the light emitting device does not comprise phosphors that emit light having a peak emission greater than or equal to about 635 nm. 如請求項1之發光器件,其中: 該第一磷光體發射具有處於約500 nm至約540 nm之峰值發射之綠光;及 來自該發光器件之該總體發射光譜具有大於或等於約40之R9顯色值。The light emitting device of claim 1, wherein: the first phosphor emits green light having a peak emission at about 500 nm to about 540 nm; and the overall emission spectrum from the light emitting device has an R9 of greater than or equal to about 40 Color value. 如請求項10之發光器件,其中該第一磷光體發射具有處於約520 nm至約540 nm之峰值發射的綠光。The light emitting device of claim 10, wherein the first phosphor emits green light having a peak emission at about 520 nm to about 540 nm. 如請求項10之發光器件,其中由該半導體光源發射之該藍光具有處於約430 nm至約465 nm之峰值及約10 nm至約35 nm之半高全寬。The light emitting device according to claim 10, wherein the blue light emitted by the semiconductor light source has a peak at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm. 如請求項10之發光器件,其中由該第一磷光體發射之該綠光具有小於或等於約45 nm之半高全寬。The light emitting device of claim 10, wherein the green light emitted by the first phosphor has a full width at half maximum of less than or equal to about 45 nm. 如請求項10之發光器件,其中由該第二磷光體發射之該紅光具有約70 nm至約100 nm之半高全寬。The light emitting device according to claim 10, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm. 如請求項10之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約80之CRI。The light emitting device of claim 10, wherein the overall emission spectrum from the light emitting device has a CRI of about 80 or greater. 如請求項10之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約280之輻射發光效率。The light emitting device of claim 10, wherein the overall emission spectrum from the light emitting device has a radiant luminous efficacy of greater than or equal to about 280. 如請求項10之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約50之R9顯色值及大於或等於約300之輻射發光效率。The light emitting device of claim 10, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of greater than or equal to about 50 and a radiation luminous efficacy of greater than or equal to about 300. 如請求項10之發光器件,其中該發光器件不包含發射具有大於或等於約635 nm之峰值發射的光的磷光體。The light emitting device of claim 10, wherein the light emitting device does not comprise a phosphor that emits light having a peak emission greater than or equal to about 635 nm. 如請求項1之發光器件,其中 該第一磷光體發射具有處於約500 nm至約540 nm之峰值發射之綠光; 該第二磷光體發射具有小於或等於約620 nm之峰值發射之綠光;及 來自該發光器件之該總體發射光譜具有大於或等於約0之R9顯色值。The light emitting device of claim 1, wherein the first phosphor emits green light having a peak emission at about 500 nm to about 540 nm; the second phosphor emits green light having a peak emission less than or equal to about 620 nm and the overall emission spectrum from the light emitting device has an R9 color rendering value greater than or equal to about zero. 如請求項19之發光器件,其中由該半導體光源發射之該藍光具有處於約430 nm至約465 nm之峰值及約10 nm至約35 nm之半高全寬。The light emitting device according to claim 19, wherein the blue light emitted by the semiconductor light source has a peak at about 430 nm to about 465 nm and a full width at half maximum of about 10 nm to about 35 nm. 如請求項19之發光器件,其中由該第一磷光體發射之該綠光具有小於或等於約45 nm之半高全寬。The light emitting device of claim 19, wherein the green light emitted by the first phosphor has a full width at half maximum of less than or equal to about 45 nm. 如請求項19之發光器件,其中由該第二磷光體發射之該紅光具有約70 nm至約100 nm之半高全寬。The light emitting device according to claim 19, wherein the red light emitted by the second phosphor has a full width at half maximum of about 70 nm to about 100 nm. 如請求項19之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約80之CRI。The light emitting device of claim 19, wherein the overall emission spectrum from the light emitting device has a CRI of about 80 or greater. 如請求項19之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約280之輻射發光效率。The light emitting device of claim 19, wherein the overall emission spectrum from the light emitting device has a radiant luminous efficacy of greater than or equal to about 280. 如請求項19之發光器件,其中來自該發光器件之該總體發射光譜具有大於或等於約50之R9顯色值及大於或等於約300之輻射發光效率。The light emitting device of claim 19, wherein the overall emission spectrum from the light emitting device has an R9 color rendering value of greater than or equal to about 50 and a radiation luminous efficacy of greater than or equal to about 300. 如請求項19之發光器件,其中該發光器件不包含發射具有大於或等於約635 nm之峰值發射的光的磷光體。The light emitting device of claim 19, wherein the light emitting device does not comprise phosphors that emit light having a peak emission greater than or equal to about 635 nm. 如請求項1之發光器件,其中該第一磷光體不包含量子點。The light emitting device according to claim 1, wherein the first phosphor does not contain quantum dots. 如請求項1之發光器件,其中該第一磷光體包含量子點。The light emitting device according to claim 1, wherein the first phosphor comprises quantum dots. 如請求項1之發光器件,其中該第一磷光體係直接安置在該半導體光源上。The light emitting device according to claim 1, wherein the first phosphorescent system is directly disposed on the semiconductor light source. 如請求項1之發光器件,其中該發光器件不包含產生約550 nm與約590 nm之間的凹陷之濾光片。The light emitting device of claim 1, wherein the light emitting device does not include a filter that creates a recess between about 550 nm and about 590 nm.
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