TWI791759B - An ultrasound apparatus, medical ultrasound system and method for operating the same - Google Patents
An ultrasound apparatus, medical ultrasound system and method for operating the same Download PDFInfo
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- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
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- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
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Abstract
一種設備,包括:第一開關,連接超聲換能器和電壓源,第一開關配置成在第一值與第二值之間改變其電阻抗;第二開關,連接超聲換能器和放大器,第二開關配置成在第三值與第四值之間改變其電阻抗;其中第一值的幅值與第二值的幅值的比率為至少103,以及第三值的幅值與第四值的幅值的比率為至少103。 A device comprising: a first switch connected to an ultrasound transducer and a voltage source, the first switch being configured to change its electrical impedance between a first value and a second value; a second switch connected to the ultrasound transducer and an amplifier, The second switch is configured to change its electrical impedance between a third value and a fourth value; wherein the ratio of the magnitude of the first value to the magnitude of the second value is at least 103, and the magnitude of the third value is compared to the fourth value The ratio of the magnitudes of the values is at least 103.
Description
本文的本公開涉及超聲設備。 The present disclosure herein relates to ultrasound devices.
超聲波用於許多不同領域中。例如,超聲波能夠用於遠處對象的測距和檢測。超聲波能夠用於成像(例如超聲波檢查術)和無損測試。 Ultrasound is used in many different fields. For example, ultrasonic waves can be used for ranging and detection of distant objects. Ultrasound can be used for imaging (eg sonography) and non-destructive testing.
對象的某些屬性可在超聲波與該對象進行交互之後從超聲波來收集。在超聲成像的示例中,因為內部的物質可按不同方式與超聲波進行交互,所以可形成對象(例如人體)的內部(例如器官和組織)的圖像。超聲成像可以不要求電離輻射或造影劑。 Certain properties of an object may be gleaned from the ultrasound after the ultrasound interacts with the object. In the example of ultrasound imaging, images of the interior (eg, organs and tissues) of an object (eg, a human body) may be formed because matter inside may interact with ultrasound waves in different ways. Ultrasound imaging may not require ionizing radiation or contrast agents.
本文所公開的是一種設備,包括:第一開關,連接超聲換能器和電壓源,其中第一開關配置成在第一值與第二值之間改變其電阻抗;第二開關,連接超聲換能器和放大器,其中第二開關配置成在第三值與第四值之間改變其電阻抗;其中第一值的幅值與第二值的幅值的比率為至少103,以及第三值的幅值與第四值的幅值的比率為至少103。 Disclosed herein is a device comprising: a first switch connected to an ultrasound transducer and a voltage source, wherein the first switch is configured to change its electrical impedance between a first value and a second value; a second switch connected to the ultrasound transducer A transducer and an amplifier, wherein the second switch is configured to change its electrical impedance between a third value and a fourth value; wherein the ratio of the magnitude of the first value to the magnitude of the second value is at least 103, and the third A ratio of the magnitude of the value to the magnitude of the fourth value is at least 103.
按照實施例,該設備還包括控制器,其配置成使第一開關的電阻抗處於第一值並且使第二開關的電阻抗處於第四值,或者使第一開關的電阻抗處於第二值並且使第二開關的電阻抗處於第三值。 According to an embodiment, the device further comprises a controller configured to bring the electrical impedance of the first switch to a first value and to bring the electrical impedance of the second switch to a fourth value, or to bring the electrical impedance of the first switch to a second value And the electrical impedance of the second switch is at a third value.
按照實施例,第二值小於100歐姆,以及第四值小於100歐姆。 According to an embodiment, the second value is less than 100 ohms, and the fourth value is less than 100 ohms.
按照實施例,第一開關包括兩個背靠背雙擴散金屬氧化物半導體(DMOS)場效應電晶體(FET),或者其中第二開關包括兩個背靠背DMOSFET。 According to an embodiment, the first switch comprises two back-to-back double diffused metal oxide semiconductor (DMOS) field effect transistors (FETs), or wherein the second switch comprises two back-to-back DMOSFETs.
按照實施例,DMOSFET是第一開關包括兩個背靠背雙擴散金屬氧化物半導體(DMOS)場效應電晶體(FET)。 According to an embodiment, the DMOSFET is a first switch comprising two back-to-back double diffused metal oxide semiconductor (DMOS) field effect transistors (FETs).
按照實施例,該設備沒有包括四分之一波長傳輸線。 According to an embodiment, the device does not include a quarter wavelength transmission line.
按照實施例,該設備包括存儲超聲波特性的記憶體。 According to an embodiment, the device comprises a memory storing ultrasound characteristics.
按照實施例,該設備還包括通信模組,以便與其他內部或外部功能模組發送和接收數據。 According to an embodiment, the device also includes a communication module to send and receive data with other internal or external functional modules.
本文所公開的是一種醫療超聲系統,包括:上述設備的任一個;換能器;電壓源;以及放大器。 Disclosed herein is a medical ultrasound system comprising: any one of the above devices; a transducer; a voltage source; and an amplifier.
本文所公開的是一種方法,包括:將連接超聲換能器和電壓源的第一開關的電阻抗從第一值切換到第二值,並且將連接超聲換能器和放大器的第二開關的電阻抗從第四值切換到第三值;經過第一開關將第一電信號從電壓源提供給超聲換能器;將第一開關的電阻抗從第二值切換到第一值,並且將第二開關的電阻抗從第三值切換到第四值;接收從超聲換能器到放大器的第二電信號。 Disclosed herein is a method comprising: switching the electrical impedance of a first switch connecting an ultrasound transducer to a voltage source from a first value to a second value, and switching the electrical impedance of a second switch connecting the ultrasound transducer to an amplifier switching the electrical impedance from a fourth value to a third value; providing a first electrical signal from a voltage source to the ultrasonic transducer via a first switch; switching the electrical impedance of the first switch from a second value to a first value, and The electrical impedance of the second switch switches from a third value to a fourth value; receiving a second electrical signal from the ultrasound transducer to the amplifier.
100:設備 100: equipment
101:第一開關 101: first switch
102:第二開關 102: Second switch
104:電壓源 104: Voltage source
106:放大器 106: Amplifier
110:控制器 110: Controller
111:脈衝 111: Pulse
112:記憶體 112: memory
113:超聲波 113: Ultrasonic
120:超聲波 120: Ultrasonic
121:回波 121: Echo
122:回波 122: Echo
130:對象 130: object
131:部分 131: part
132:部分 132: part
151:超聲換能器 151: Ultrasonic transducer
201:雙擴散金屬氧化物半導體(DMOS)場效應電晶體(FET) 201: Double-Diffused Metal-Oxide-Semiconductor (DMOS) Field-Effect Transistor (FET)
202:雙擴散金屬氧化物半導體(DMOS)場效應電晶體(FET) 202: Double diffused metal oxide semiconductor (DMOS) field effect transistor (FET)
203:DMOSFET 203:DMOSFET
204:DMOSFET 204:DMOSFET
205:電壓調節器 205: voltage regulator
206:電壓調節器 206:Voltage regulator
511:過程 511: process
512:過程 512: process
513:過程 513: process
521:過程 521: process
522:過程 522: process
523:過程 523: process
601:醫療超聲系統 601: Medical ultrasound system
701:無損超聲系統 701: Non-destructive ultrasound system
圖1示意示出按照實施例、將超聲波傳送到物體並且接收從物體所反射的回波的設備的原理圖。 Fig. 1 schematically shows a schematic diagram of a device for transmitting ultrasonic waves to an object and receiving echoes reflected from the object, according to an embodiment.
圖2示出按照實施例的超聲系統的設備、換能器、電壓源和放大器的原理框圖。 Fig. 2 shows a functional block diagram of devices, transducers, voltage sources and amplifiers of an ultrasound system according to an embodiment.
圖3A和圖3B示意示出按照實施例的設備的第一開關和第二開關的電氣組件圖。 3A and 3B schematically illustrate electrical assembly diagrams of a first switch and a second switch of a device according to an embodiment.
圖4A和圖4B各示出按照一個實施例、切換第一開關和第二開關的電阻抗以便使超聲換能器生成或接收超聲波的方法的流程圖的示例。 4A and 4B each illustrate an example of a flowchart of a method of switching electrical impedance of a first switch and a second switch to cause an ultrasound transducer to generate or receive ultrasound waves, according to one embodiment.
圖5和圖6各示意示出包括本文所述超聲設備的系統。 5 and 6 each schematically illustrate a system including an ultrasound device as described herein.
圖1示意示出包括設備100的系統的示例,設備100將超聲波119傳送到對象130並且接收超聲波120(其是與對象130已經交互的超聲波119的一部分)。超聲波119可以是連續波或離散脈衝。對象130可包括兩個或更多不同部分(例如部分131和部分132)。不同部分可按不同方式抵制超聲波的傳輸(例如具有不同的聲阻抗)。超聲波119的一部分可被部分131所反射;以及一部分可通過部分131並且後來被部分132所反射。因此,超聲波120可包括反射的兩個集合。例如,如果超聲波119具有脈衝111,則超聲波120具有脈衝111的兩個回波121和122(其分別通過在部分131和部分132的脈衝111的反射所產生)。脈衝111與回波121之間的時間間隔能夠用來確定設備100與部分131之間的距離;回波121與122之間的時間間隔能夠用來確定部分131與132之間的距離。回波121和122的強度可用來確定部分131和部分132的聲阻抗。
Fig. 1 schematically shows an example of a system comprising a
圖2示意示出按照實施例的設備100的原理框圖。設備100可包括第一開關101、第二開關102和控制器110。該圖還示出超聲換能器151、電壓源104和放大器106,其可以是超聲系統的部分,並且可與設備100進行交互。
FIG. 2 schematically shows a functional block diagram of a
超聲換能器151可包括振動器(例如電容器或壓電材料)。當以一個或多個適當頻率進行振盪的電壓施加到振動器時,振動器變形,並且因而產生超聲波,其對應於電壓的波形。當超聲波施加到振動器時,振動器變形,並且因而產生振盪電壓,其對應於超聲波的波形。
The
第一開關101連接電壓源104和超聲換能器151。第一開關101的電阻抗可在控制器110的控制下在第一值與第二值之間變化。第一值的幅值與第二值的幅值的比率可以為至少1000。第一開關101的電阻抗的第二值可小於100歐姆。當第一開關101的電阻抗處於第一值時,來自電壓源104的電信號經過第一開關101充分衰減,而沒有使超聲換能器151產生充分超聲波。當第一開關101的電阻抗處於第二值時,來自電壓源104的電信號沒有經過第一開關101充分衰減,而是可使超聲換能器151產生充分超聲波。
The
第二開關102連接放大器106和超聲換能器151。第二開關101的電阻抗可在控制器110的控制下在第三值與第四值之間變化。第三值的幅值與第四值的幅值的比率為至少1000。第二開關102的電阻抗的第四值可小於100歐姆。當第二開關102的電阻抗處於第四值時,超聲換能器151因超聲換能器151所接收的超聲波而生成的電信號沒有充分衰減,而是基本上經由第二開關102從超聲換能器151傳送到放大器106。當第二開關102的第二電阻抗處於第三值時,超聲換能器151因超聲換能器151所接收的超聲波而生成的電信號被第二開關充分衰減。
The
當超聲換能器151用於產生超聲波時,控制器110可配置成使第一開關101的電阻抗處於第二值,並且使第二開關的電阻抗處於第三值。來自電壓源104的電信號經由第一開關基本上未衰減地傳送到超聲換能器151,並且驅動超聲換能器151以產生超聲波。來自電壓源104的電信號因第二開關102的高電阻抗(例如處於第三值)而基本上不影響放大器106。
When the
當超聲換能器151用於接收超聲波(例如來自對象130)時,控制器110可配置成使第一開關101的電阻抗處於第一值,並且使第二開關的電阻抗處於第四值。由超聲換能器151從所接收的超聲波所生成的電信號經過第二開關102基本
上未衰減地傳送到放大器106。來自電壓源104的電信號因第一開關101的高電阻抗(例如處於第一值)而基本上不影響放大器106。
When the
設備100還可具有其他週邊模組,例如:記憶體112,存儲超聲波特性,例如所測量回波強度和所計算飛行時間或其他參考值;以及通信介面113,與其他內部或外部功能模組或裝置交換數據。
The
圖3A和圖3B示意示出按照實施例的第一開關101和第二開關102的組件圖。如圖3A所示,第一開關101可包括電壓調節器206和雙擴散金屬氧化物半導體(DMOS)場效應電晶體(FET)201和202。DMOSFET 201和202的源電極連接在一起(“背靠背DMOSFET”),以形成雙向負載開關。電壓調節器206可以是開關電壓調節器,其配置成調高或升高來自控制器110的低輸入電壓信號,並且生成可控高輸出電壓以驅動DMOSFET開關。DMOSFET 201的漏電極連接到電壓源104,以及DMOSFET 202的漏電極連接到超聲換能器151。DMOSFET 201和202的柵電極接收來自電壓調節器206的輸出,其可接通或關斷DMOSFET 201和202。
3A and 3B schematically show assembly diagrams of the
如圖3B所示,第二開關102可包括電壓調節器205以及兩個DMOSFET 203和204。DMOSFET 203和204的源電極連接在一起(“背靠背DMOSFET”),以形成雙向負載開關。電壓調節器205可以是開關電壓調節器,其配置成調高或升高來自控制器110的低輸入電壓信號,並且生成可控高輸出電壓以驅動背靠背DMOSFET。DMOSFET 203的漏電極連接到放大器106,以及DMOSFET 204的漏電極連接到超聲換能器151。DMOSFET 203和204的柵電極接收來自電壓調節器205的輸出,其可接通或關斷DMOSFET 201和202。
As shown in FIG. 3B , the
DMOSFET(例如本文中的DMOSFET 201-204)可使源電極放置在漏電極之上,其中電流在DMOSFET接通時垂直流動。DMOSFET的柵電極可具有V形或U形。 A DMOSFET, such as DMOSFETs 201-204 herein, may have the source electrode placed above the drain electrode, where current flows vertically when the DMOSFET is on. A gate electrode of a DMOSFET may have a V shape or a U shape.
在實施例中,設備100沒有包括四分之一波長傳輸線。
In an embodiment,
圖4A和圖4B各示意示出按照一個實施例、切換第一開關101和第二開關102的電阻抗以便使超聲換能器151生成或接收超聲波的方法的流程圖。如圖4A所示,在過程511,連接超聲換能器151和電壓源104的第一開關101的電阻抗從第一值切換到第二值(例如使用控制器110)。在過程512,連接超聲換能器151和放大器106的第二開關102的電阻抗從第四值切換到第三值(例如使用控制器110)。在過程513,電壓源104經過第一開關101將第一電信號提供給超聲換能器。第一電信號可驅動超聲換能器151以產生超聲波。
4A and 4B each schematically show a flowchart of a method for switching the electrical impedance of the
如圖4B所示,在過程521,連接超聲換能器151和電壓源104的第一開關101的電阻抗從第二值切換到第一值(例如使用控制器110)。在過程522,連接超聲換能器151和放大器106的第二開關102的電阻抗從第三值切換到第四值(例如使用控制器110)。在過程523,由超聲換能器151從所接收的超聲波所生成的第二電信號經過第二開關102傳送到放大器106。
As shown in FIG. 4B , at
圖5示意示出包括本文所述設備100、超聲換能器151、電壓源104和放大器106的醫療超聲系統601。系統601可用於醫療成像,例如心回波圖(以查看心臟,如圖5所示)、胎兒超聲波、腹部超聲波、骨測量(以評估骨脆性)等。系統601配置成傳送和接收連續超聲波或離散超聲波。超聲圖像可基於超聲波從人體的反射來產生。反射的強度和定時可提供對產生圖像是有用的資訊。圖像可即時地捕獲,並且因而顯示身體內部器官的移動以及流經血管的血液。與X射線成像不同,不存在與超聲成像關聯的電離輻射暴露。
FIG. 5 schematically shows a
圖6示意示出工業非接觸式和無損超聲系統701,其包括本文所述設備100、超聲換能器151、電壓源104和放大器106。系統701可用於材料測試和檢查,而無需接觸測試材料或測試主體(例如金屬管道或者發動機驅動軸)。在示例中,系統701配置成生成超聲脈衝,其從樣本反射並且引起電信號。電信號通過軟體來解釋,並且提供與樣本的內部結構(例如裂紋或缺陷)有關的線索。非接觸式超聲波可促進在生產線上、在極熱環境中連續滾動、塗敷、氧化或者難以物理接觸的材料或組件的測試。
FIG. 6 schematically illustrates an industrial non-contact and
雖然本文公開了各個方面和實施例,但是其他方面和實施例將是本領域的技術人員清楚知道的。本文所公開的各個方面和實施例是為了便於說明而不是要進行限制,其中真實範圍和精神通過以下權利要求書來指示。 Although various aspects and embodiments are disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are by way of illustration and not limitation, with the true scope and spirit being indicated by the following claims.
100:設備 100: equipment
101:第一開關 101: first switch
102:第二開關 102: Second switch
104:電壓源 104: Voltage source
106:放大器 106: Amplifier
110:控制器 110: Controller
111:脈衝 111: Pulse
112:記憶體 112: memory
113:超聲波 113: Ultrasonic
151:超聲換能器 151: Ultrasonic transducer
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PCT/CN2018/075184 WO2019148478A1 (en) | 2018-02-03 | 2018-02-03 | An ultrasound apparatus |
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CN1685246A (en) * | 2002-08-29 | 2005-10-19 | 伊格尔超声公司 | Ultrasound transceiver system for remote operation through minimal number of connecting wires |
TW201636639A (en) * | 2014-11-12 | 2016-10-16 | 茂力科技股份有限公司 | High voltage analog switch |
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US5226847A (en) * | 1989-12-15 | 1993-07-13 | General Electric Company | Apparatus and method for acquiring imaging signals with reduced number of interconnect wires |
US5186177A (en) * | 1991-12-05 | 1993-02-16 | General Electric Company | Method and apparatus for applying synthetic aperture focusing techniques to a catheter based system for high frequency ultrasound imaging of small vessels |
CN1254544A (en) * | 1998-11-25 | 2000-05-31 | 周靖人 | Ultrasonic diagnosis instrument |
JP6150458B2 (en) * | 2012-02-21 | 2017-06-21 | キヤノン株式会社 | Ultrasonic device |
CN102820933A (en) * | 2012-08-21 | 2012-12-12 | 河海大学常州校区 | Underwater sound MODEM (modulator-demodulator) for underwater interphone |
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CN1685246A (en) * | 2002-08-29 | 2005-10-19 | 伊格尔超声公司 | Ultrasound transceiver system for remote operation through minimal number of connecting wires |
TW201636639A (en) * | 2014-11-12 | 2016-10-16 | 茂力科技股份有限公司 | High voltage analog switch |
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