TWI791534B - Method of depositing OLED - Google Patents

Method of depositing OLED Download PDF

Info

Publication number
TWI791534B
TWI791534B TW107119677A TW107119677A TWI791534B TW I791534 B TWI791534 B TW I791534B TW 107119677 A TW107119677 A TW 107119677A TW 107119677 A TW107119677 A TW 107119677A TW I791534 B TWI791534 B TW I791534B
Authority
TW
Taiwan
Prior art keywords
starting material
storage
mass
storage element
temperature
Prior art date
Application number
TW107119677A
Other languages
Chinese (zh)
Other versions
TW201905224A (en
Inventor
比吉特 伊姆加德 畢卡德
Original Assignee
德商愛思強歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商愛思強歐洲公司 filed Critical 德商愛思強歐洲公司
Publication of TW201905224A publication Critical patent/TW201905224A/en
Application granted granted Critical
Publication of TWI791534B publication Critical patent/TWI791534B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4483Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本發明係有關於用於將層沉積在基板(5)上之一種裝置及一種方法,其中,在準備步驟中將起始材料之第一質量沉澱在儲存元件(1)之儲存面上,並且在塗佈步驟中將起始材料自儲存面蒸發,並且藉由載氣(C)將起始材料之經測定的質量輸入製程室(2),在該處,在基板(5)上將具有起始材料或起始材料之反應產物的層沉積在基板(5)上。在準備步驟中將大於所測定質量最多百分之10的質量,但較佳剛好將所測定質量,沉澱在儲存面上,在塗佈步驟中透過加熱將該質量蒸發。 The invention relates to a device and a method for depositing layers on a substrate (5), wherein in a preparatory step a first mass of starting material is deposited on the storage face of the storage element (1), and In the coating step the starting material is evaporated from the storage surface and the measured mass of the starting material is fed by means of the carrier gas (C) into the process chamber (2), where on the substrate (5) there will be A layer of starting material or reaction product of starting material is deposited on the substrate (5). A mass greater than at most 10 percent of the measured mass, but preferably just the measured mass, is deposited on the storage surface in the preparatory step and evaporated by heating during the coating step.

Description

沉積OLED之方法 Methods of Depositing OLEDs

本發明係有關於一種將層沉積在基板上之方法,其中,在準備步驟中將起始材料之第一質量沉澱在儲存元件之儲存面上,並且在塗佈步驟中將該起始材料自該等儲存面蒸發,並且藉由載氣將該起始材料之經測定的質量運輸進製程室,在該處在基板上將具有該起始材料或該起始材料之反應產物的層沉積在該基板上。 The invention relates to a method for depositing a layer on a substrate, wherein in a preparatory step a first mass of starting material is deposited on the storage surface of a storage element and in a coating step the starting material is freed from The storage surfaces are evaporated and the measured mass of the starting material is transported by a carrier gas into a process chamber where a layer with the starting material or a reaction product of the starting material is deposited on a substrate on this substrate.

WO 2012/175128、WO 2012/175126及WO 2012/175124 A1揭露過一種同類型的方法。固態發泡體以其開孔型氣孔之壁部構成儲存面,在準備步驟中,將事先經蒸發之有機起始材料沉澱在此等儲存面上。在塗佈步驟中,將此固態發泡體加熱至保持恆定的蒸發溫度。將載氣流穿過儲存元件,在此儲存元件中,以保持恆定的蒸發率饋送經蒸發的起始材料。將以上述措施產生之在時間上恆定的蒸汽流饋送入沉積反應器之製程室,在此製程室中,基板處於經冷卻的基板架上。將起始材料或此起始材料之反應產物沉積在此基板之表面上。 WO 2012/175128, WO 2012/175126 and WO 2012/175124 A1 disclosed a method of the same type. The solid foam forms, with its open-celled walls, storage surfaces on which, in a preparatory step, the previously evaporated organic starting material is deposited. In the coating step, this solid foam is heated to a constant evaporation temperature. The carrier gas flow is passed through a storage element where the evaporated starting material is fed at a constant evaporation rate. The temporally constant vapor flow produced by the above-mentioned measures is fed into the process chamber of the deposition reactor, in which the substrates are placed on cooled substrate holders. A starting material or a reaction product of the starting material is deposited on the surface of the substrate.

US 7,238,389描述過一種裝置,其具有用來蒸發粉末之粉末蒸發器,此粉末蒸發器將蒸汽饋送入用作蒸汽源之固態發泡體。 US 7,238,389 describes a device having a powder evaporator for evaporating powder which feeds steam into a solid foam used as a source of steam.

DE 10 2011 051 260 A1描述過一種用於由所儲存的有 機起始材料產生氣膠之氣膠發生器。藉由載氣將此氣膠饋送入由固態發泡體構成之蒸發器,自外部為此固態發泡體輸送蒸發能,從而在此固態發泡體之面上蒸發氣膠粒子。將如此產生之蒸汽饋送入佈置有待塗佈基板之製程室。 DE 10 2011 051 260 A1 describes an aerosol generator for generating aerosols from stored organic starting materials. This aerosol is fed by means of a carrier gas into an evaporator consisting of a solid foam, to which evaporation energy is supplied from the outside, so that the aerosol particles are evaporated on the surface of this solid foam. The vapor thus generated is fed into the process chamber where the substrate to be coated is arranged.

本發明之目的在於,改良同類型的方法以利其使用,特別是提供可用來簡化對起始材料之被饋送入製程室的經精確測定的質量進行調節之措施。 The object of the present invention is to improve a method of the same type for its use, and in particular to provide means for simplifying the adjustment of the precisely determined mass of the starting material fed into the process chamber.

該目的透過申請專利範圍所給出之發明而達成,其中,附屬項不僅為獨立項所給出之發明的有利改良方案,亦為該目的之獨創解決方案。申請專利範圍之各特徵可與其他申請專利範圍之各特徵任意組合。 This object is achieved by means of the inventions given in the claims, wherein the dependent item is not only an advantageous improvement of the invention given in the independent item, but also an original solution to the purpose. Each feature of the claimed patent scope can be combined with each feature of other claimed patent scope arbitrarily.

本發明之方法首先且實質上透過如下方式改良:在該準備步驟中,將該起始材料之預設質量沉澱在該等儲存面上。該質量可剛好為在該塗佈步驟中被沉積之質量。該起始材料之沉澱在該等儲存面上的總質量可略大於在該塗佈步驟中被重新蒸發之質量,其中,該質量差為最大百分之10,較佳最大百分之1。儲存器之某種程度的「過量裝料」的優點在於,可將具有大體恆定的長度或恆定的能量之保持不變的能量脈衝用於進行蒸發,且該塗佈步驟可極為短暫。出於技術方面的原因,蒸汽發生率在能量施加結束時近似呈指數減小,從而在僅還有少於百分之10的儲存質量存在於儲存面上的情況下將蒸汽發生停止。較佳在少於百分之1的儲存質量存在於儲存面上的情況下將蒸發過程停止。儘管如此,用於蒸發起始材料之能量施加的時間與習知方法相比並非關鍵,因為蒸發率在 蒸發步驟結束時呈指數減小,且所散發的質量易於保持在公差範圍內。若該儲存元件已經歷相關製程並且在其儲存面上承載有少量起始材料,則可剛好將該起始材料之所測定質量沉澱在儲存面上。在塗佈步驟中,將起始材料之沉積在儲存面上的質量完全蒸發直至上述處於公差範圍內的剩餘量,並且饋送入製程室。 The method of the invention is firstly and substantially improved by depositing, in the preparatory step, a predetermined mass of the starting material on the storage surfaces. The mass may be exactly the mass deposited during the coating step. The total mass of the starting material deposited on the storage surfaces may be slightly greater than the mass reevaporated during the coating step, wherein the mass difference is a maximum of 10 percent, preferably a maximum of 1 percent. The advantage of a certain "overfilling" of the reservoir is that constant energy pulses of approximately constant length or constant energy can be used for evaporation and this coating step can be extremely short. For technical reasons, the steam generation rate decreases approximately exponentially at the end of the energy application, so that the steam generation is stopped when only less than 10 percent of the stored mass remains on the storage surface. The evaporation process is preferably stopped when less than 1 percent of the stored mass is present on the storage surface. Nevertheless, the time of energy application for evaporating the starting material is not critical compared to conventional methods, since the evaporation rate decreases exponentially at the end of the evaporation step and the emitted mass is easily kept within tolerances. If the storage element has undergone the relevant process and carries a small amount of starting material on its storage surface, just the determined mass of the starting material can be deposited on the storage surface. In the coating step, the mass of starting material deposited on the storage surface is completely evaporated up to the above-mentioned remaining amount within the tolerance range and fed into the process chamber.

在採用本發明之將層沉積在基板上之方法的情況下,藉由載氣將粉末之經精確測定的量作為蒸汽量輸入製程室。在該處將層沉積在基板上。在先前技術中,透過如下方式測定該蒸汽量:蒸汽發生器首先進入工作狀態,其在該工作狀態下產生保持恆定的蒸汽率。隨後,載氣流將起始材料之在時間上保持恆定的質量流輸入製程室。在定義的時間期內測定該量,在該時間期內,將該在時間上恆定的質量流饋送入製程室。根據本發明,用該起始材料之經精確測定的量為儲存元件裝料。此點可在同樣用來實施塗佈步驟之同一裝置中實施。透過輸送管將載氣-蒸汽混合物饋送入透氣的儲存元件中,但將其冷凝面保持在較低溫度,特別是保持在室溫。儲存元件之溫度較佳低於起始材料之冷凝溫度至少20℃。可以多種方式產生蒸汽狀的起始材料以便為儲存元件裝料,例如可稱出起始材料之量並且將其在坩鍋中完全蒸發,並且將該蒸汽冷凝在儲存元件之儲存面上。但作為替代方案,可產生氣膠或粒子流,將該氣膠或該粒子流在蒸發器中蒸發,其中,產生穩定的蒸汽流並且透過氣相沉積之時間來確定儲存在儲存面上之起始材料的量。亦可將氣膠或粒子流之固態或液態的成分直接沉澱在儲存元件之儲存面上。在此透過氣膠施加之時間期來測定沉澱在儲存面上之材料。在採用該種方法的情況下,若蒸發率或氣膠發生率之時間平均值不發 生變化,則起始材料在蒸發器或氣膠發生器中之蒸發率或氣膠發生率可在時間上完全改變。此外,本發明之方法可將該準備步驟與該塗佈步驟在時間上隔開。存在如下方案:各用該起始材料之一經精確測定的質量同時為數個儲存元件裝料,或者將裝有經精確測定的質量之儲存元件儲存起來並且按需要加以應用。在塗佈步驟中,對該儲存元件施加能量脈衝。此點可透過通電,即透過饋送電能來實施。在進行能量施加後,儲存元件之溫度持續上升,直至達到最高溫度,該最高溫度高於起始材料之冷凝溫度或蒸發溫度,但低於該起始材料發生化學或物理轉化之溫度。該起始材料係指在製造OLED時所應用之有機起始材料。在將較冷的儲存元件自室溫或低於冷凝溫度之更高溫度加熱至最高溫度時,儲存面之溫度持續上升。在一定程度上形成溫度斜坡。故蒸汽發生率在塗佈步驟期間有所變化。該蒸汽發生率自零上升並且達到最大值。在儲存在儲存元件中之全部起始材料被蒸發後,蒸發率在最大值後重新下降回零。藉由本發明,以較高的材料效率及該材料之短暫的停留時間期在較熱的蒸發器中將可重複的材料量蒸發。在進行批量生產時,依次實施數個沉澱步驟,其中,亦可依次實施數個循環來沉積層,在該等循環中,首先為該儲存元件裝料,隨後,將該起始材料蒸發,其中,該起始材料之受儲存元件承載的全部質量可略大於該塗佈步驟所需之質量。重要的是,在進行裝料時,始終將相同量的起始材料送至儲存面,較佳在隨後的塗佈步驟中僅將該量自儲存面蒸發。如此便能確保將可重複的質量的有機材料蒸發,其中該公差易於遵循,因為隨著蒸發量增加,特別是在至少百分之90的儲存質量被蒸發的情況下,蒸汽發生率呈指數減小。因此,較佳在塗佈步驟中將離散 定義的材料量、即剛好用於塗佈步驟之材料量沉澱在較冷的蒸發器上。該蒸發器之溫度僅需低於蒸發溫度。在準備步驟結束後(該準備步驟在一定程度上指由儲存元件構成之蒸發器的裝料步驟)可開始塗佈步驟,具體方式為:用能量脈衝將該蒸發器加熱,使得沉澱在儲存面上之材料大體完全蒸發,即蒸發至技術上可接受之餘量。該塗佈步驟可短於該準備步驟。可在幾秒內將儲存在儲存面上之材料大體完全蒸發。隨後,將該蒸發器、即該儲存元件重新冷卻並且在達到低於蒸發溫度之溫度後重新為其裝料。在裝料期間,即在準備步驟期間,可在製程室內進行基板更換。較佳透過將作為蒸汽運輸之有機起始材料冷凝來為儲存元件裝料,使得該儲存元件構成冷凝液載體。 In the case of the method according to the invention for depositing a layer on a substrate, a precisely measured amount of powder is fed into the process chamber as a vapor amount by means of a carrier gas. There the layers are deposited on the substrate. In the prior art, this amount of steam is determined by the following way: the steam generator first enters into an operating state where it generates a constant steam rate. The carrier gas flow then introduces a temporally constant mass flow of the starting material into the process chamber. This quantity is determined within a defined time period during which this temporally constant mass flow is fed into the process chamber. According to the invention, the storage element is charged with precisely determined amounts of the starting material. This can be done in the same device that is also used to carry out the coating step. The carrier gas-vapor mixture is fed via a delivery tube into a gas-permeable storage element, but its condensation surface is kept at a low temperature, in particular at room temperature. The temperature of the storage element is preferably at least 20°C below the condensation temperature of the starting material. The vaporous starting material can be generated for filling the storage element in various ways, for example the amount of starting material can be weighed out and completely evaporated in a crucible and the vapor condensed on the storage surface of the storage element. As an alternative, however, an aerosol or particle flow can be generated which is evaporated in an evaporator, wherein a steady flow of vapor is generated and the time of storage on the storage surface is determined by the time of vapor deposition. amount of starting material. It is also possible to deposit solid or liquid constituents of the aerosol or particle flow directly on the storage surface of the storage element. The material deposited on the storage surface is determined here over the period of time during which the aerosol is applied. In the case of this method, the evaporation rate or aerosol generation rate of the starting material in the evaporator or aerosol generator can be varied over time if the time average of the evaporation rate or aerosol generation rate does not change. completely changed. Furthermore, the method of the invention allows the temporal separation of the preparation step and the coating step. There are options to simultaneously charge several storage elements each with precisely determined masses of the starting material, or to store storage elements with precisely determined masses and to use them as required. During the coating step, an energy pulse is applied to the storage element. This can be done by energizing, ie by feeding in electrical energy. After energy application, the temperature of the storage element continues to rise until reaching a maximum temperature which is higher than the condensation or evaporation temperature of the starting material but lower than the temperature at which the starting material undergoes a chemical or physical transformation. The starting materials refer to the organic starting materials used in the manufacture of OLEDs. As the cooler storage element is heated from room temperature or a higher temperature below the condensation temperature to a maximum temperature, the temperature of the storage surface continues to rise. A temperature ramp is formed to a certain extent. The steam generation rate therefore varies during the coating step. The steam generation rate rises from zero and reaches a maximum value. After all the starting material stored in the storage element has been evaporated, the evaporation rate drops back to zero after a maximum value. By means of the invention, reproducible quantities of material are evaporated in a hotter evaporator with a higher material efficiency and a short residence time period of the material. In series production, several precipitation steps are carried out in succession, wherein several cycles can also be carried out in succession to deposit layers, in which cycles the storage element is first charged and the starting material is subsequently evaporated, wherein , the total mass of the starting material carried by the stored element may be slightly greater than the mass required for the coating step. It is important that when charging, the same amount of starting material is always delivered to the storage surface, preferably only this amount is evaporated from the storage surface in the subsequent coating step. This ensures that a reproducible quality of organic material is evaporated, wherein the tolerances are easy to follow because the vapor generation rate decreases exponentially with increasing evaporation, especially when at least 90 percent of the stored mass is evaporated. Small. Therefore, it is preferable to deposit a discretely defined amount of material in the coating step, i.e. the amount of material just used for the coating step, on the cooler evaporator. The temperature of the evaporator need only be below the evaporation temperature. After the preparatory step (which to some extent refers to the charging step of the evaporator formed by the storage element) can start the coating step by heating the evaporator with energy pulses so that the deposits on the storage surface The above material is substantially completely evaporated, that is, evaporated to a technically acceptable margin. The coating step can be shorter than the preparation step. The material stored on the storage surface can be substantially completely evaporated within seconds. Subsequently, the evaporator, ie the storage element, is recooled and recharged after reaching a temperature below the evaporating temperature. Substrate changes can be performed within the process chamber during loading, ie during preparation steps. The storage element is preferably charged by condensing the organic starting material transported as vapour, so that the storage element constitutes the condensate carrier.

1‧‧‧儲存元件 1‧‧‧storage element

2‧‧‧製程室 2‧‧‧Process room

3‧‧‧氣體入口構件 3‧‧‧Gas inlet components

4‧‧‧基板架 4‧‧‧Substrate rack

5‧‧‧基板 5‧‧‧substrate

6‧‧‧輸送通道 6‧‧‧Transportation channel

7‧‧‧輸送管 7‧‧‧Conveying pipe

C‧‧‧載氣 C‧‧‧carrier gas

H‧‧‧熱功率 H‧‧‧thermal power

Q‧‧‧量 Q‧‧‧quantity

V‧‧‧蒸汽 V‧‧‧Steam

t‧‧‧時間 t‧‧‧time

下面根據附圖闡述本發明之實施例。其中:圖1為用於為儲存元件1裝料之裝置,如圖2示意性所示,該裝置可為塗佈設備之部分,但亦可與其在空間上隔開,圖2為塗佈裝置,圖3為先前技術(WO 2012/175128)中之蒸汽源的蒸汽發生率的時間曲線,以及圖4為本發明之蒸汽源的蒸汽發生率。 Embodiments of the present invention are described below according to the accompanying drawings. Wherein: Fig. 1 is the device that is used for storing element 1 charging, as shown schematically in Fig. 2, this device can be the part of coating equipment, but also can be separated from it in space, Fig. 2 is coating device , FIG. 3 is the time curve of the steam generation rate of the steam source in the prior art (WO 2012/175128), and FIG. 4 is the steam generation rate of the steam source of the present invention.

圖1示出用於為實施冷凝液載體之功能的儲存元件1裝料之裝置,將該冷凝液載體用作為用於儲存有機起始材料之經精確測定的量的儲存介質。此外,儲存元件1具有蒸發器之功能。如WO 2012/175128或US 7,238,389中所描述的那般,該蒸發器由導電 的固態發泡體構成。 FIG. 1 shows a device for charging a storage element 1 which performs the function of a condensate carrier as a storage medium for storing precisely measured quantities of organic starting materials. In addition, the storage element 1 has the function of an evaporator. The evaporator is constructed of an electrically conductive solid foam as described in WO 2012/175128 or US 7,238,389.

在用有機起始材料為儲存元件1裝料之準備步驟期間,儲存元件1之溫度低於該有機起始材料之冷凝溫度。可將儲存元件1冷卻,以便散發冷凝熱。但該儲存元件亦可具有足夠低的溫度,使其在以蒸汽形式被饋送入圖1所示裝置之起始材料冷凝時不會達到蒸發溫度。 During the preparatory steps for charging the storage element 1 with the organic starting material, the temperature of the storage element 1 is below the condensation temperature of the organic starting material. The storage element 1 can be cooled in order to dissipate the heat of condensation. However, the storage element can also have a temperature sufficiently low that it does not reach the evaporation temperature when the starting material fed in vapor form into the device shown in FIG. 1 condenses.

圖1所示裝置具有輸送管7,載氣C透過該輸送管運輸有機起始材料之事先產生的蒸汽V。在輸送管7之擴展橫截面的區域內設有由導電的固態發泡體構成之儲存元件1。可將其開孔的氣室壁構成供蒸汽V冷凝之儲存面。 The apparatus shown in FIG. 1 has a delivery duct 7 through which a carrier gas C transports a previously generated vapor V of the organic starting material. In the region of the expanded cross-section of the delivery tube 7 there is a storage element 1 made of an electrically conductive solid foam. The open air chamber wall can be used as a storage surface for steam V to condense.

可藉由一裝置產生被饋送入輸送管7之蒸汽,此點在開篇所引用的先前技術中有所揭露。特別是可設有用來產生氣膠流之氣膠發生器,在上游的另一蒸發器中將該氣膠流蒸發。但亦可稱出有機起始材料之預設的質量並且在坩鍋中加熱,並且透過輸送管7將由此產生之蒸汽V朝儲存元件1導引,隨後,所產生的蒸汽V完全冷凝在儲存元件之儲存面上。但亦可透過撒上粉末或使得液體凝固來為儲存元件1裝料。在採用用於蒸汽發生之較佳方法時,透過輸送管7流動之全部蒸汽V皆冷凝在儲存元件1之儲存面上。 The steam fed into the duct 7 can be generated by means of a device, which is disclosed in the prior art cited at the opening. In particular, an aerosol generator can be provided for generating an aerosol flow which is evaporated in an upstream further evaporator. However, it is also possible to weigh out a predetermined mass of the organic starting material and heat it in a crucible, and to conduct the resulting vapor V through the delivery pipe 7 towards the storage element 1, whereupon the resulting vapor V is completely condensed in the storage element 1. storage surface of the component. However, it is also possible to charge the storage element 1 by dusting it with powder or by allowing the liquid to solidify. When using the preferred method for steam generation, all the steam V flowing through the delivery pipe 7 condenses on the storage surface of the storage element 1 .

可將此種裝有有機起始材料之經精確測定的量的儲存元件1儲存起來供之後使用。但特別是在同樣用來產生蒸汽之同一裝置內用有機材料為儲存元件1裝料,將該蒸汽饋送入製程室2以沉積層。 Such storage elements 1 filled with precisely determined quantities of organic starting materials can be stored for later use. In particular, however, the storage element 1 is charged with organic material in the same device which is also used to generate the vapor which is fed into the process chamber 2 for the deposition of the layers.

圖2示出此種裝置。在緊接著準備步驟之塗佈步驟期間,透過輸送通道6饋送不存在蒸汽之載氣流。載氣流C穿過儲存元 件1,透過饋送熱能H將該儲存元件加熱。在此過程中,儲存元件1之溫度持續發生變化,直至高於有機起始材料之蒸發溫度。可透過將電流穿過導電的儲存元件1來饋送熱功率H。 Figure 2 shows such a device. During the coating step following the preparation step, the carrier gas flow without steam is fed through the delivery channel 6 . The carrier gas flow C passes through the storage element 1, which is heated by feeding thermal energy H. During this process, the temperature of the storage element 1 changes continuously until it is higher than the evaporation temperature of the organic starting material. The heating power H can be supplied by passing an electric current through the electrically conductive storage element 1 .

儲存元件1中之蒸發率隨溫度升高而升高,直至達到某個溫度後,蒸發率達到最大值(參閱圖4)。隨著儲存在儲存元件1中之材料逐漸耗盡,在有機起始材料之儲存在儲存元件1中的質量近似被完全蒸發且冷凝液在儲存面上之覆蓋率低於百分之50或百分之20的情況下,蒸發率下降至近似零。亦即,蒸發率大體隨時間呈指數減小。在蒸發率僅相當於最大蒸發率之百分之一的情況下,能量輸送停止。 The evaporation rate in the storage element 1 increases as the temperature increases, until a certain temperature is reached, and the evaporation rate reaches a maximum value (see FIG. 4 ). As the material stored in the storage element 1 is gradually depleted, the mass of organic starting material stored in the storage element 1 is approximately completely evaporated and the coverage of the condensate on the storage surface is less than 50 or 100 percent. In the case of 20/10, the evaporation rate drops to approximately zero. That is, the evaporation rate generally decreases exponentially with time. At an evaporation rate equal to only one percent of the maximum evaporation rate, the energy delivery stops.

因此,塗佈步驟可在材料流持續變化的情況下產生穿過輸送通道6流動之蒸汽流。 Thus, the coating step can generate a flow of vapor flowing through the conveying channel 6 with a continuously changing flow of material.

輸送通道6將儲存元件1與氣體入口構件3連接在一起,該氣體入口構件佈置在製程室2內並且保持在高於蒸汽之冷凝溫度的溫度上,使得在儲存元件1中產生並且透過輸送通道6所運輸之蒸汽完全貫穿氣體入口構件3。氣體入口構件3在朝向基板架4之排氣面上具有數個呈篩網狀佈置之噴嘴。自呈蓮蓬頭形之氣體入口構件3排出且運輸蒸汽之載氣C將蒸汽V朝佈置在經冷卻的基板架4上之基板5方向運輸,該蒸汽之可重複的部分在該處作為層而冷凝或發生反應,從而將反應產物作為層沉積在基板5上。 The delivery channel 6 connects the storage element 1 with the gas inlet member 3, which is arranged in the process chamber 2 and is kept at a temperature above the condensation temperature of the vapor so that 6 The transported steam runs through the gas inlet member 3 completely. The gas inlet member 3 has several nozzles arranged in a mesh shape on the exhaust surface facing the substrate holder 4 . The carrier gas C, which exits from the showerhead-shaped gas inlet element 3 and transports the vapor, transports the vapor V in the direction of the substrate 5 arranged on the cooled substrate holder 4, where a reproducible portion of the vapor condenses as a layer Or a reaction takes place so that the reaction product is deposited as a layer on the substrate 5 .

圖4示出由本發明之蒸汽源、即儲存元件1產生之蒸汽發生率,而圖3示出先前技術中之蒸汽源的蒸汽發生率。在蒸汽發生率急劇變化之穩定時間後,該蒸汽發生率達到穩定狀態,在該狀態下,蒸汽發生率在時間上不再發生變化。饋送入製程室2之量Q 由饋送時間定義,在該饋送時間期間,將穩定的蒸汽流饋送入製程室2。 Fig. 4 shows the steam generation rate generated by the steam source of the present invention, ie the storage element 1, while Fig. 3 shows the steam generation rate of the steam source in the prior art. After the stabilization time of the sharp change in the steam generation rate, the steam generation rate reaches a steady state in which the steam generation rate does not change over time. The quantity Q fed into the process chamber 2 is defined by the feed time during which a steady stream of vapor is fed into the process chamber 2 .

在本發明之方法(圖4)中,有機起始材料之沉澱在儲存元件1之儲存面上的儲存質量、特別是冷凝液質量形成饋送入製程室2之量Q。 In the method according to the invention ( FIG. 4 ), the stored mass, in particular the condensate mass, of the organic starting material deposited on the storage surface of the storage element 1 forms the quantity Q fed into the process chamber 2 .

需要沉積在基板上之層特別是以數個疊層狀的單層形式存在,其中,以如下方式沉積每個單層:首先在準備步驟中用起始材料為儲存元件1裝料,其中,總是將相同的質量沉澱在儲存元件1之儲存面上,其中,該質量與在準備步驟之後的塗佈步驟中重新被儲存元件1蒸發之質量大體相同,使得在每個塗佈步驟後,在儲存面上保留有近似相同的剩餘質量,其中,該剩餘質量較佳僅部分地覆蓋儲存面。在塗佈步驟中,將儲存元件1清空至某個程度,使得用起始材料覆蓋儲存面之覆蓋率低於百分之20,且其中,用起始材料覆蓋儲存面之覆蓋率在塗佈步驟前為百分之100。 The layers to be deposited on the substrate are in particular in the form of several laminated individual layers, wherein each individual layer is deposited in such a way that the storage element 1 is first charged with a starting material in a preparatory step, wherein, Always deposit the same mass on the storage surface of the storage element 1, wherein this mass is approximately the same as the mass evaporated by the storage element 1 again in the coating step after the preparation step, so that after each coating step, An approximately equal residual mass remains on the storage surface, wherein this residual mass preferably only partially covers the storage surface. In the coating step, the storage element 1 is emptied to such an extent that the coverage of the storage surface with the starting material is below 20 percent, and wherein the coverage of the storage surface with the starting material is 100 percent before step.

前述實施方式係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中亦可將此等特徵組合中的兩個、數個或所有相互組合,亦即: The aforementioned embodiments are used to illustrate the inventions included in the application as a whole, and these inventions are independently improved solutions relative to the prior art through at least the following combination of features, wherein two, several or more of these feature combinations can also be combined All combined with each other, that is:

一種方法,其特徵在於:在該準備步驟中將大於該所測定質量最多百分之10的質量,但較佳剛好將該所測定質量,沉澱在該等儲存面上,在該塗佈步驟中將該質量蒸發。 A method, characterized in that in the preparation step a mass greater than at most 10 percent of the measured mass, but preferably just the measured mass, is deposited on the storage surfaces during the coating step This mass was evaporated.

一種方法,其特徵在於:在該起始材料之蒸發率在時間上有所變化的情況下,透過將該儲存元件1加熱來將該起始材料自該等儲存面蒸發。 A method, characterized in that the starting material is evaporated from the storage surfaces by heating the storage element 1 with the evaporation rate of the starting material varying over time.

一種方法,其特徵在於:該儲存元件1在該準備步驟中具有低於該起始材料之冷凝溫度、特別是低於該冷凝溫度至少20℃之溫度,並且在該塗佈步驟中自該溫度加熱至高於該起始材料之冷凝溫度的溫度,其中,該儲存元件1之溫度持續上升。 A method, characterized in that the storage element 1 has in the preparation step a temperature below the condensation temperature of the starting material, in particular at least 20° C. below the condensation temperature, and in the coating step from this temperature Heating to a temperature above the condensation temperature of the starting material, wherein the temperature of the storage element 1 continues to rise.

一種方法,其特徵在於:將固態發泡體用作儲存元件1,該固態發泡體具有導電性並且透過通電來加熱該儲存元件1。 A method, which is characterized in that a solid foam is used as the storage element 1 , which is electrically conductive and which heats the storage element 1 by energizing it.

一種方法,其特徵在於:為了將該儲存在該等儲存面上之起始材料蒸發,對該儲存元件1施加能量脈衝。 A method, characterized in that an energy pulse is applied to the storage element 1 in order to evaporate the starting material stored on the storage surfaces.

一種方法,其特徵在於:該準備步驟中,載氣C將該起始材料作為粒子流、氣膠或在蒸汽狀的狀態下朝該儲存元件1輸送。 A method, characterized in that in the preparatory step a carrier gas C transports the starting material towards the storage element 1 as a stream of particles, an aerosol or in a vapor-like state.

一種方法,其特徵在於:在數個接續進行的步驟中,在準備步驟中分別將該起始材料之一預設質量沉澱在該等儲存面上,並且隨後透過能量施加在該塗佈步驟中將相同的質量蒸發,其中,特別是在該塗佈步驟後,在該塗佈步驟開始前被沉澱在該等儲存面上之質量的最多百分之10還存在於該等儲存面上。 A method, characterized in that, in several successive steps, a pre-determined mass of the starting material is deposited on the storage surfaces in a preparatory step and is subsequently applied by means of energy in the coating step The same mass is evaporated, wherein, in particular after the coating step, a maximum of 10 percent of the mass deposited on the storage surfaces before the coating step started is still present on the storage surfaces.

一種方法,其特徵在於:應用預設的能量來進行蒸發。 A method, characterized in that a preset energy is used for vaporization.

所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。此外,在每個請求項中給出之發明可具有在前文描述中揭示的、特別是用元件符號表示及/或在元件符號列表中給出的特徵中 的一或多個。本發明亦涵蓋未實現前述特徵中之個別特徵的實施方案,特別是在此等特徵對於具體用途而言並非不可或缺或可被其他等效手段替代的情況下。 All disclosed features, either individually or in combination, are essential to the invention. Therefore, the disclosed content of this application also includes all the content disclosed in the relevant/attached priority files (copy of the earlier application), and the features described in these files are also included in the scope of the patent application of this application. The dependent items describe the features of the improvement solution of the present invention to the prior art with its features, and the main purpose is to make a divisional application on the basis of these claims. Furthermore, the invention given in each claim may have one or more of the features disclosed in the preceding description, in particular indicated by elements and/or given in the list of elements. The invention also covers embodiments in which individual ones of the aforementioned features are not achieved, especially if these features are not indispensable for a particular application or can be replaced by other equivalent means.

1‧‧‧儲存元件 1‧‧‧storage element

2‧‧‧製程室 2‧‧‧Process room

3‧‧‧氣體入口構件 3‧‧‧Gas inlet components

4‧‧‧基板架 4‧‧‧Substrate rack

5‧‧‧基板 5‧‧‧substrate

6‧‧‧輸送通道 6‧‧‧Transportation channel

7‧‧‧輸送管 7‧‧‧Conveying pipe

C‧‧‧載氣 C‧‧‧carrier gas

H‧‧‧熱功率 H‧‧‧thermal power

V‧‧‧蒸汽 V‧‧‧Steam

Claims (10)

一種將層沉積在基板(5)上之方法,其中,在準備步驟中藉由冷凝將起始材料之第一質量沉澱在儲存元件(1)之儲存面上,其中該等儲存面之溫度係低於該起始材料之冷凝溫度,以及在塗佈步驟中將該起始材料自該等儲存面蒸發,其中該等儲存面係被加熱至高於該起始材料之冷凝溫度的溫度,並且藉由載氣(C)將該起始材料之經測定的質量輸入製程室(2),其中具有該起始材料或該起始材料之反應產物的層係沉積在該基板(5)上,其特徵在於:大於該經測定的質量最多百分之10的質量在該準備步驟中沉澱並在該塗佈步驟中蒸發。 A method for depositing a layer on a substrate (5), wherein in a preparatory step a first mass of starting material is deposited by condensation on storage surfaces of a storage element (1), wherein the temperature of the storage surfaces is being below the condensation temperature of the starting material, and evaporating the starting material from the storage surfaces during the coating step, wherein the storage surfaces are heated to a temperature above the condensation temperature of the starting material, and by The measured mass of the starting material is fed by a carrier gas (C) into a process chamber (2), wherein a layer system with the starting material or a reaction product of the starting material is deposited on the substrate (5), which It is characterized in that a mass greater than at most 10 percent of the measured mass is precipitated in the preparation step and evaporated in the coating step. 如請求項1之方法,其中,在該準備步驟中剛好將該所測定質量沉澱在該等儲存面上,在該塗佈步驟中將該質量蒸發。 The method of claim 1, wherein the measured mass is just deposited on the storage surfaces in the preparation step and the mass is evaporated in the coating step. 如請求項1或2之方法,其中,在該起始材料之蒸發率在時間上有所變化的情況下,透過將該儲存元件(1)加熱來將該起始材料自該等儲存面蒸發。 The method of claim 1 or 2, wherein the starting material is evaporated from the storage surfaces by heating the storage element (1) with the evaporation rate of the starting material varying over time . 如請求項1或2之方法,其中,該儲存元件(1)在該準備步驟中具有低於該起始材料之冷凝溫度至少20。℃之溫度,並且在該塗佈步驟中自該溫度加熱至高於該起始材料之冷凝溫度的溫度,其中,該儲存元件(1)之溫度持續上升。 The method according to claim 1 or 2, wherein the storage element (1) has a condensation temperature at least 20°C lower than that of the starting material in the preparation step. °C, and heating from this temperature to a temperature above the condensation temperature of the starting material during the coating step, wherein the temperature of the storage element (1) continues to rise. 如請求項1或2之方法,其中,將固態發泡體用作儲存元件(1),該固態發泡體具有導電性並且透過通電來加熱該儲存元件(1)。 The method according to claim 1 or 2, wherein a solid foam is used as the storage element (1), the solid foam has electrical conductivity and heats the storage element (1) by passing electricity. 如請求項1或2之方法,其中,為了將該儲存在該等儲存面上之起始材料蒸發,對該儲存元件(1)施加能量脈衝。 A method according to claim 1 or 2, wherein an energy pulse is applied to the storage element (1) in order to evaporate the starting material stored on the storage surfaces. 如請求項1或2之方法,其中,該準備步驟中,載氣(C)將該起 始材料作為粒子流、氣膠或在蒸汽狀的狀態下朝該儲存元件(1)輸送。 The method as claimed in item 1 or 2, wherein, in the preparation step, the carrier gas (C) will be The starting material is transported towards the storage element (1) as a stream of particles, as an aerosol or in a vapor-like state. 如請求項1或2之方法,其中,在數個接續進行的步驟中,在準備步驟中分別將該起始材料之一預設質量沉澱在該等儲存面上,並且隨後透過能量施加在該塗佈步驟中將相同的質量蒸發。 The method of claim 1 or 2, wherein, in several successive steps, a predetermined mass of the starting material is deposited on the storage surfaces respectively in the preparation step, and then applied to the storage surfaces by energy The same mass is evaporated during the coating step. 如請求項8之方法,其中,在該塗佈步驟後,在該塗佈步驟開始前被沉澱在該等儲存面上之質量的最多百分之10還存在於該等儲存面上。 The method of claim 8, wherein, after the coating step, at most 10 percent of the mass deposited on the storage surfaces before the coating step begins is still present on the storage surfaces. 如請求項1或2之方法,其中,應用預設的能量來進行蒸發。 The method according to claim 1 or 2, wherein a preset energy is used for evaporation.
TW107119677A 2017-06-08 2018-06-07 Method of depositing OLED TWI791534B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017112668.6 2017-06-08
DE102017112668.6A DE102017112668A1 (en) 2017-06-08 2017-06-08 Method for depositing OLEDs
??102017112668.6 2017-06-08

Publications (2)

Publication Number Publication Date
TW201905224A TW201905224A (en) 2019-02-01
TWI791534B true TWI791534B (en) 2023-02-11

Family

ID=62567643

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107119677A TWI791534B (en) 2017-06-08 2018-06-07 Method of depositing OLED

Country Status (4)

Country Link
KR (1) KR102652774B1 (en)
DE (1) DE102017112668A1 (en)
TW (1) TWI791534B (en)
WO (1) WO2018224454A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019129176A1 (en) * 2019-10-29 2021-04-29 Apeva Se Method and device for depositing organic layers
DE102020103822A1 (en) 2020-02-13 2021-08-19 Apeva Se Device for evaporating an organic powder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI539631B (en) * 2009-09-15 2016-06-21 無限科技全球公司 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585848A1 (en) * 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Method and apparatus for thin film formation by CVD
DE10048759A1 (en) * 2000-09-29 2002-04-11 Aixtron Gmbh Method and device for separating organic layers in particular by means of OVPD
US7238389B2 (en) 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
KR101226518B1 (en) * 2008-09-30 2013-01-25 도쿄엘렉트론가부시키가이샤 Deposition apparatus, deposition method, and storage medium having program stored therein
KR101711502B1 (en) 2011-06-22 2017-03-02 아익스트론 에스이 Method and apparatus for vapor deposition
DE102011051260A1 (en) 2011-06-22 2012-12-27 Aixtron Se Method and device for depositing OLEDs
KR101711504B1 (en) * 2011-06-22 2017-03-02 아익스트론 에스이 Vapor deposition system and supply head
DE102011051261A1 (en) * 2011-06-22 2012-12-27 Aixtron Se Method and apparatus for depositing OLEDs in particular evaporation device to it
DE102011051263B4 (en) * 2011-06-22 2022-08-11 Aixtron Se Device for aerosol generation and deposition of a light-emitting layer
JP5877244B2 (en) 2011-06-22 2016-03-02 アイクストロン、エスイー Vapor deposition material source and method for producing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI539631B (en) * 2009-09-15 2016-06-21 無限科技全球公司 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

Also Published As

Publication number Publication date
KR20200016276A (en) 2020-02-14
KR102652774B1 (en) 2024-03-28
WO2018224454A1 (en) 2018-12-13
TW201905224A (en) 2019-02-01
DE102017112668A1 (en) 2018-12-13

Similar Documents

Publication Publication Date Title
JP5989107B2 (en) Organic starting material deposition method, evaporation apparatus and deposition apparatus
KR102003527B1 (en) Method and device for depositing oleds
JP5474089B2 (en) Organic thin film forming apparatus and organic material film forming method
TWI791534B (en) Method of depositing OLED
JP5877245B2 (en) Vapor deposition method and vapor deposition apparatus
CN106133516B (en) Device and method for determining the concentration of a vapor by means of a vibrating body sensor
JP6752199B2 (en) Steam generators and steam generator methods for CVD or PVD equipment
KR910002567B1 (en) Carrier gas cluster source for thermally conditioned clusters
US10066287B2 (en) Direct liquid deposition
JP5877244B2 (en) Vapor deposition material source and method for producing the same
TWI709748B (en) Device for measuring the concentration or the partial pressure of the vapor, application of the sensor, and method for cleaning the active surface of the sensor
JP2014524975A (en) Vapor deposition system and supply head
JP6606547B2 (en) Steam generating apparatus and steam generating method for generating steam for a CVD or PVD apparatus from a plurality of liquid or solid raw materials
TW201718917A (en) Vapor deposition device and method employing plasma as an indirect heating medium
JPH05214537A (en) Solid sublimating vaporizer
JPH04120270A (en) Method and device for generating cluster ion beam
JP2003282557A (en) Deposition method
KR20240005955A (en) Coating equipment for coating objects, methods and uses for coating objects
JP6712592B2 (en) Apparatus for depositing layers on a substrate
JP2012087328A (en) Film deposition device and film deposition method