TWI791245B - Display apparatus - Google Patents

Abstract

A display apparatus includes a driving backplane and a light-emitting device. The light-emitting device includes a semiconductor structure, a first electrode, a second electrode, an insulation layer and a reflective layer. The semiconductor structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The semiconductor structure has a first surface away the driving backplane, a second surface facing the driving backplane and a side wall connecting the first surface and the second surface. The insulation layer at least covers the side wall of the semiconductor structure, and the insulation layer doesn’t cover the first surface of the semiconductor structure. The insulation layer has an extending portion extending from a boundary of the side wall and the first surface of the semiconductor structure along a direction away the driving backplane. At least one portion of the reflective layer is disposed on the extending portion of the insulation layer.

Description

display device

The present invention relates to an optoelectronic device, and more particularly to a display device.

The light emitting diode display panel includes a driving backplane and a plurality of light emitting diode elements transposed on the active element substrate. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness, and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have advantages such as easy color adjustment, long luminous life, and no image burn-in. Therefore, LED display panels are regarded as the next generation display technology. However, the light distribution of light emitting diodes is wide, resulting in low extraction efficiency of forward light of light emitting diode display panels, which is not conducive to display applications.

The invention provides a display device with good forward light extraction efficiency.

The display device of the present invention includes a driving backplane and a light emitting element. The light emitting element is disposed on the driving backplane and electrically connected to the driving backplane. The light emitting element includes a semiconductor structure, a first electrode, a second electrode, an insulating layer and a reflective layer. The semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer of the semiconductor structure. The second electrode is electrically connected to the second type semiconductor layer of the semiconductor structure. The semiconductor structure has a first surface facing away from the driving backplane, a second surface facing the driving backplane, and a side wall connecting the first surface and the second surface. The insulating layer covers at least the sidewalls of the semiconductor structure and does not cover the first surface of the semiconductor structure. The insulating layer has an extension part, and the extension part extends from the boundary between the sidewall of the semiconductor structure and the first surface toward the direction away from the driving backplane. At least a part of the reflective layer is disposed on the extension of the insulating layer.

In an embodiment of the present invention, at least a part of the semiconductor structure, the extension of the insulating layer and the reflective layer form a reflective cup. The display device further includes a protective adhesive layer covering the driving backplane and the light emitting element, and filling the reflective cup.

In an embodiment of the present invention, the above-mentioned insulating layer further covers the second surface of the semiconductor structure, and there is a gap between a part of the insulating layer covering the second surface of the semiconductor structure and the driving backplane.

In an embodiment of the present invention, the above-mentioned extension of the insulating layer has an inner surface, an outer surface, and an end surface, the inner surface is located between the outer surface and the semiconductor structure, and the end surface connects the inner surface and the outer surface; the reflective layer is disposed on the extension The outer surface and the end surface are not provided on the inner surface of the extension.

In an embodiment of the present invention, a part of the insulating layer covers the second surface of the semiconductor structure, and the reflective layer is further disposed on the part of the insulating layer.

In an embodiment of the present invention, the above-mentioned extension of the insulating layer has an inner surface, an outer surface and an end surface, the inner surface is located between the outer surface and the semiconductor structure, the end surface connects the inner surface and the outer surface, and the reflective layer is disposed on the extension The outer surface, inner surface and end surface.

In an embodiment of the present invention, the above-mentioned reflective layer includes a distributed Bragg reflector.

In an embodiment of the present invention, the above-mentioned extension of the insulating layer has an inner surface, an outer surface and an end surface, the inner surface is located between the outer surface and the semiconductor structure, and the end surface connects the inner surface and the outer surface, and the first light-emitting element The electrodes are arranged on the end surface of the extension part of the insulating layer.

In an embodiment of the present invention, the first electrode of the above-mentioned light-emitting element is further disposed on the inner surface of the extension portion of the insulating layer.

In an embodiment of the present invention, at least a part of the reflective layer is in contact with the first surface of the semiconductor structure to be electrically connected to the first-type semiconductor layer, and the first electrode is electrically connected to the reflective layer.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, the limit of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

1A to 1G are schematic cross-sectional views of a manufacturing process of a display device 10 according to an embodiment of the present invention. The manufacturing process and structure of the display device 10 according to an embodiment of the present invention will be illustrated below with reference to FIG. 1A to FIG. 1G .

Please refer to FIG. 1A. First, a buffer material layer (not shown), a first-type semiconductor material layer (not shown), an active material layer (not shown) and a second-type semiconductor material are sequentially formed on the growth substrate 1. layers (not shown). The buffer material layer, the first-type semiconductor material layer, the active material layer and the second-type semiconductor material layer form an epitaxial stack (not shown). Next, the epitaxial stack is patterned to form an epitaxial structure 2 . The epitaxial structure 2 includes a buffer layer 100, a first-type semiconductor layer 110, an active layer 120 and a second-type semiconductor layer 130 stacked on the growth substrate 1 in sequence, wherein the buffer layer 100 of the epitaxial structure 2 is formed by the epitaxial stack The first-type semiconductor layer 110 of the epitaxial structure 2 is formed by patterning the first-type semiconductor material layer of the epitaxial structure, and the active layer 120 of the epitaxial structure 2 is formed by epitaxial The active material layer of the epitaxial stack is patterned, and the second-type semiconductor layer 130 of the epitaxial structure 2 is formed by patterning the second-type semiconductor material layer of the epitaxial stack.

For example, in this embodiment, the first type semiconductor layer 110 can have a platform portion 112 and a high platform portion 114, and the active layer 120 and the second type semiconductor layer 130 can be stacked on the first type semiconductor layer 110 in sequence. On the platform portion 114 , the active layer 120 and the second-type semiconductor layer 130 can expose the platform portion 112 of the first-type semiconductor layer 110 . However, the present invention is not limited thereto, and in other embodiments, the epitaxial structure 2 may also have other forms.

Referring to FIG. 1B , next, an insulating layer 140 , a first electrode 152 and a second electrode 154 are formed on the epitaxial structure 2 . The insulating layer 140 covers the top surface 2 a and the sidewall 2 b of the epitaxial structure 2 and has a first contact window 140 a and a second contact window 140 b respectively exposing the first type semiconductor layer 110 and the second type semiconductor layer 130 . The first electrode 152 and the second electrode 154 respectively fill in the first contact hole 140 a and the second contact hole 140 b to be electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 130 respectively. In this embodiment, the epitaxial structure 2 , the insulating layer 140 covering the top surface 2 a and the sidewall 2 b of the epitaxial structure 2 , the first electrode 152 and the second electrode 154 constitute the crystal grain 3 .

Please refer to FIG. 1B and FIG. 1C , and then, the growth substrate 1 and the crystal grains 3 on it are flip-chiped on the carrier 4 . Please refer to FIG. 1C , and then, the growth substrate 1 is removed to expose the surface 102 of the buffer layer 100 . For example, in this embodiment, the carrier 4 may include a carrier board 41 and an adhesive layer 42 disposed on the carrier board 41 . In this embodiment, the second electrode 154 of the crystal grain 3 can be made to face the carrier 4, and then be connected with the adhesive layer 42 of the carrier 4, so that the crystal grain 3 is temporarily fixed on the carrier 4; when the crystal grain 3 is temporarily fixed on the carrier 4, the growth substrate 1 is located on the side of the crystal grain 3 away from the carrier 4; then, the growth substrate 1 can be selectively removed using a laser lift-off technique (Laser lift-off; LLO) to expose the buffer layer The surface 102 of 100; but the present invention is not limited thereto.

Referring to FIG. 1D , next, a reflective material layer 160 is formed on the die 3 to cover the surface 102 of the buffer layer 100 and part of the insulating layer 140 disposed on the sidewall 2 b of the epitaxial structure 2 . For example, in this embodiment, the material of the reflective material layer 160 may be aluminum. However, the present invention is not limited thereto, and in other embodiments, the material of the reflective material layer 160 may also be other materials with high reflectivity.

Please refer to FIG. 1D and FIG. 1E , then, part of the reflective material layer 160 on the buffer layer 100 is removed to form a reflective layer 162 , and the buffer layer 100 of the epitaxial structure 2 is removed to form a semiconductor structure 21 and an insulating layer 140 The extension 142. For example, in this embodiment, the buffer layer 100 and the part of the reflective material layer 160 on the buffer layer 100 can be removed by inductively coupled plasma dry etching (Inductively coupled plasma; ICP), but the present invention is not limited thereto. .

Referring to FIG. 1E , the light emitting element 5 includes a semiconductor structure 21 , a first electrode 152 , a second electrode 154 , an insulating layer 140 and a reflective layer 162 . The semiconductor structure 21 includes a first-type semiconductor layer 110 , a second-type semiconductor layer 130 and an active layer 120 disposed between the first-type semiconductor layer 110 and the second-type semiconductor layer 130 . The first electrode 152 is electrically connected to the first-type semiconductor layer 110 of the semiconductor structure 21 . The second electrode 154 is electrically connected to the second-type semiconductor layer 130 of the semiconductor structure 21 . The semiconductor structure 21 has a first surface 21 a facing away from the carrier 4 , a second surface 21 b facing the carrier 4 , and a sidewall 21 c connecting the first surface 21 a and the second surface 21 b. The insulating layer 140 at least covers the sidewall 21 c of the semiconductor structure 21 and does not cover the first surface 21 a of the semiconductor structure 21 . In particular, the insulating layer 140 has an extension portion 142, the extension portion 142 extends from the boundary 21d between the sidewall 21c of the semiconductor structure 21 and the first surface 21a toward the direction k1 away from the carrier 4, and at least a part of the reflective layer 162 is provided with the insulating layer 140 on the extension 142 .

It should be noted that the reflective cup C can be formed by the semiconductor structure 21 , the extension portion 142 of the insulating layer 140 and at least a part of the reflective layer 162 on the extension portion 142 . The reflective cup C can reflect the light emitted by the active layer 120 and limit the light to exit within a small angle range, thereby increasing the forward light extraction efficiency of the light emitting element 5 .

1E, the extension portion 142 of the insulating layer 140 has an inner surface 142a, an outer surface 142b and an end surface 142c, the inner surface 142a is located between the outer surface 142b and the semiconductor structure 21, and the end surface 142c connects the inner surface 142a and the outer surface 142b. Please refer to FIG. 1D and FIG. 1E. In this embodiment, the buffer layer 100 and part of the reflective material layer 160 on the buffer layer 100 are removed after the reflective material layer 160 is formed on the crystal grain 3, so that the reflective material layer 160 patterned into reflective layer 162 . Therefore, in this embodiment, the reflective layer 162 will be disposed on the outer surface 142b and the end surface 142c of the extension portion 142 of the insulating layer 140 but will not be disposed on the inner surface 142a of the extension portion 142 of the insulating layer 140, but the present invention This is not the limit.

Referring to FIG. 1E and FIG. 1F , then, the light-emitting element 5 on the carrier 4 is transposed onto the driving backplane 200 , and the light-emitting element 5 is electrically connected to the driving backplane 200 . For example, in this embodiment, the drive backplane 200 includes data lines (not shown), scan lines (not shown), power lines (not shown), common lines (not shown), pixel drive circuit (not shown), the first pad 210 and the second pad 220 . The pixel driving circuit includes a first transistor (not shown), a second transistor (not shown) and a capacitor (not shown), the first end of the first transistor is electrically connected to the data line, the first transistor The control end of the crystal is electrically connected to the scan line, the second end of the first transistor is electrically connected to the control end of the second transistor, the first end of the second transistor is electrically connected to the power line, and the capacitor is electrically connected Between the second end of the first transistor and the first end of the second transistor, the second end of the second transistor is electrically connected to the second pad 220, the first pad 210 is electrically connected to the common line, and The first electrode 152 and the second electrode 154 of the light emitting element 5 are electrically connected to the first pad 210 and the second pad 220 of the driving backplane 200 respectively.

Referring to FIG. 1G , next, a protective adhesive layer 300 is formed on the driving backplane 200 to cover the driving backplane 200 and the light emitting elements 5 . The protective adhesive layer 300 is further filled into the reflection cup C defined by the semiconductor structure 21 , the extension portion 142 of the insulating layer 140 and at least a part of the reflection layer 162 disposed on the extension portion 142 . Here, the display device 10 of this embodiment is completed.

Referring to FIG. 1G, the semiconductor structure 21 has a first surface 21a facing away from the driving backplane 200, a second surface 21b facing the driving backplane 200, and a sidewall 21c connecting the first surface 21a and the second surface 21b. The insulating layer 140 covers The sidewall 21 c of the semiconductor structure 21 does not cover the first surface 21 a of the semiconductor structure 21 . In this embodiment, the insulating layer 140 can further cover the second surface 21b of the semiconductor structure 21, and there is a gap between a part 146 of the insulating layer 140 covering the second surface 21b of the semiconductor structure 21 and the driving backplane 200 G, and the protective adhesive layer 300 further fills the gap G.

It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the aforementioned embodiments, and the following embodiments will not be repeated.

2A to 2G are schematic cross-sectional views of the manufacturing process of the display device 10A according to an embodiment of the present invention.

The manufacturing process of the display device 10A shown in FIGS. 2A to 2G is similar to the manufacturing process of the display device 10 shown in FIGS. 1A to 1G . The main difference between the two is that the formation position of the reflective material layer 160A in FIG. The formation positions of the reflective material layer 160 of 1D are not the same, so that the structure of the finally formed display device 10A is slightly different from that of the display device 10 . The differences between the two are described below. For the same or similar points, please refer to the above description with the help of the drawings.

Please refer to FIG. 2C. In this embodiment, when the crystal grain 3 is temporarily fixed on the carrier 4, the part of the insulating layer 140 located on the top surface 2a of the epitaxial structure 2 is not in contact with the adhesive layer 42 but is in contact with the adhesive layer. 42 maintains a gap A. Please refer to FIG. 2D, whereby, when forming the reflective material layer 160A, the reflective material layer 160A will be formed on the surface 102 of the buffer layer 100 and the part of the insulating layer 140 on the sidewall 2b of the epitaxial structure 2, and the reflective material layer 160A is further formed on a portion of the insulating layer 140 on the top surface 2 a of the epitaxial structure 2 . Please refer to FIG. 2G, therefore, in the finally formed display device 10A, the reflective layer 162A not only covers the extension portion 142 of the insulating layer 140 and a part 144 of the insulating layer 140 disposed on the side wall 2b of the semiconductor structure 21, but also covers the insulating layer A portion 146 of 140 is disposed on the second surface 21 b of the semiconductor structure 21 .

3A to 3G are schematic cross-sectional views of the manufacturing process of the display device 10B according to an embodiment of the present invention.

The manufacturing process of the display device 10B shown in FIGS. 3A to 3G is similar to the manufacturing process of the display device 10 shown in FIGS. 1A to 1G . The main difference between the two lies in the time point of forming the reflective layers 162 and 162B. different. The differences between the two are described below. For the same or similar points, please refer to the above description with the help of the drawings.

Referring to FIG. 3C , FIG. 3D and FIG. 3E , in this embodiment, the reflective layer 162B is formed on the insulating layer 140 after the buffer layer 100 is removed to form the extension portion 142 of the insulating layer 140 . Therefore, in this embodiment, the reflection layer 162B can be disposed on the inner surface 142a of the extension portion 142 of the insulation layer 140 in addition to the outer surface 142b and the end surface 142c of the extension portion 142 of the insulation layer 140 .

4A to 4G are schematic cross-sectional views of the manufacturing process of the display device 10C according to an embodiment of the present invention.

The manufacturing process of the display device 10C shown in FIGS. 4A to 4G is similar to the manufacturing process of the display device 10B shown in FIGS. 3A to 3G . The main difference between the two is that the reflective layers 162B and 162C formed by the two are different. The difference between the two will be described below, and for the same or similar points between the two, please refer to the foregoing description correspondingly in conjunction with the drawings.

Referring to FIG. 4E to FIG. 4G , in this embodiment, the reflective layer 162C may be a distributed Bragg reflector (distributed Bragg reflector; DBR). The distributed Bragg reflector can be formed by alternately stacking multiple first material layers (not shown) and multiple second material layers (not shown) with different refractive indices.

5A to 5F are schematic cross-sectional views of the manufacturing process of the display device 10D according to an embodiment of the present invention.

The manufacturing process of the display device 10D shown in FIGS. 5A to 5F is similar to the manufacturing process of the display device 10 shown in FIGS. 1A to 1G . The main difference between the two is that the time points for forming the reflective layers 162D and 162 are different. , and the reflective layers 162D, 162 and their distribution positions are also different. The difference between the two will be described below, and for the same or similar points between the two, please refer to the foregoing description correspondingly in conjunction with the drawings.

Please refer to FIG. 5B and FIG. 5C. In this embodiment, before the crystal grain 3 is separated from the growth substrate 1, the reflective layer 162D is formed on the insulating layer 140 of the crystal grain 3, wherein the reflective layer 162D can be distributed. Bragg reflector; after that, the crystal grain 3 , the insulating layer 140 and the reflective layer 162D are separated from the growth substrate 1 . Please refer to FIG. 5F. Therefore, in this embodiment, in the finally formed display device 10D, the reflective layer 162D will cover the outer surface 142b of the extension portion 142 of the insulating layer 140, and the insulating layer 140 is disposed on the side wall 21c of the semiconductor structure 21. A portion 144 of the insulating layer 140 and a portion 146 of the insulating layer 140 are disposed on the second surface 21 b of the semiconductor structure 21 , but the reflective layer 162D does not cover the end surface 142 c and the inner surface 142 a of the extension portion 142 of the insulating layer 140 .

6A to 6G are schematic cross-sectional views of the manufacturing process of the display device 10E according to an embodiment of the present invention.

The manufacturing process of the display device 10E shown in FIGS. 6A to 6G is similar to the manufacturing process of the display device 10 shown in FIGS. 1A to 1G . The main difference between the two lies in the time for forming the first electrodes 152 and 152E. The points are different, and the formation positions of the first electrodes 152 and 152E are also different. The difference between the two will be described below, and for the same or similar points between the two, please refer to the foregoing description correspondingly in conjunction with the drawings.

Please refer to FIG. 6B and FIG. 6C. In this embodiment, the growth substrate 1 is removed to expose the buffer layer 100 after the formation of the second electrode 154 and before the formation of the first electrode 152E (marked in FIG. 6F). Surface 102. Referring to FIG. 6D , next, the buffer layer 100 is removed to form the extension portion 142 of the insulating layer 140 and the semiconductor structure 21 . Referring to FIG. 6E , then, a reflective layer 162 is formed on the extension portion 142 of the insulating layer 140 and a portion 144 of the insulating layer 140 disposed on the sidewall 21 c of the semiconductor structure 21 . Please refer to FIG. 6E and FIG. 6F, then, the semiconductor structure 21 and the second electrode 154 on it, the insulating layer 140 and the reflective layer 162 are transferred on the driving backplane 200, and the second electrode 154 is electrically connected to the driving the back plate 200; then, the first electrode 152E electrically connected to the first-type semiconductor layer 110 is formed; finally, the protective adhesive layer 300 is formed to cover the light-emitting element 5 and the driving substrate 200 to complete the display device 10E.

Referring to FIG. 6G , in this embodiment, the first electrode 152E and the second electrode 154 of the light-emitting element 5 are respectively located on opposite sides of the active layer 120 . In other words, in this embodiment, the light emitting element 5 is a vertical light emitting diode element. In addition, in this embodiment, the first electrode 152E can be selectively disposed on the end surface 142c and the inner surface 142a of the extension portion 142 of the insulating layer 140 and extend into the reflective cup C, so as to be in contact with the first-type semiconductor layer 110 , but the present invention is not limited thereto.

7A to 7G are schematic cross-sectional views of the manufacturing process of the display device 10F according to an embodiment of the present invention.

The manufacturing process of the display device 10F shown in FIGS. 7A to 7G is similar to the manufacturing process of the display device 10E shown in FIGS. 6A to 6G . The main difference between the two is: the reflective layers 162, 162F and the first electrode The formation positions of 152E and 152F are different. The difference between the two will be described below, and for the same or similar points between the two, please refer to the foregoing description correspondingly in conjunction with the drawings.

Referring to FIG. 7G , in this embodiment, the reflective layer 162F is disposed on a portion 144 of the insulating layer 140 disposed on the sidewall 21 c of the semiconductor structure 21 . The reflective layer 162F is further disposed on the outer surface 142b, the end surface 142c and the inner surface 142a of the extension portion 142 of the insulating layer 140 . In addition, in this embodiment, the reflective layer 162F extending into the reflective cup C can be in contact with the first surface 21a of the semiconductor structure 21 to be electrically connected to the first-type semiconductor layer 110, and the first electrode 152 is electrically connected to to the reflective layer 162F. In other words, in this embodiment, the first electrode 152F can be electrically connected to the first-type semiconductor layer 110 through the reflective layer 162F extending into the reflective cup C without being formed in the reflective cup C.

8A to 8F are schematic cross-sectional views of the manufacturing process of the display device 10G according to an embodiment of the present invention.

The manufacturing process of the display device 10G shown in FIG. 8A to FIG. 8F is similar to the manufacturing process of the display device 10E shown in FIG. 6A to FIG. The reflective layers 162G, 162 and their distribution positions are also different. The difference between the two will be described below, and for the same or similar points between the two, please refer to the foregoing description correspondingly in conjunction with the drawings.

Please refer to FIG. 8B and FIG. 8C. In this embodiment, the reflective layer 162G is formed on the insulating layer 140 before the epitaxial structure 2, the second electrode 154, and the insulating layer 140 are separated from the growth substrate 1, wherein The reflective layer 162G can be a distributed Bragg reflector; after that, the epitaxial structure 2 , the insulating layer 140 , the reflective layer 162G and the second electrode 154 are separated from the growth substrate 1 . Please refer to FIG. 8F, therefore, in the finally formed display device 10G, the reflective layer 162G will cover the outer surface 142b of the extension portion 142 of the insulating layer 140, a part 144 of the insulating layer 140 disposed on the side wall 21c of the semiconductor structure 21, and the insulating layer 140. A portion 146 of the layer 140 disposed on the second surface 21 b of the semiconductor structure 21 does not cover the end surface 142 c and the inner surface 142 a of the extension portion 142 of the insulating layer 140 .

FIG. 9 shows the light distribution of the display device 10E shown in FIG. 6G .

FIG. 10 is a schematic cross-sectional view of a display device 20 of a comparative example. The difference between the display device 20 of a comparative example of FIG. 10 and the display device 10E of an embodiment of FIG. 6G is that the display device 20 of the comparative example of FIG. 10 does not have the reflective cup C of the display device 10E of FIG. 6G , and FIG. 10 In the display device 20 of the first comparative example, no reflective layer is provided on the insulating layer 140 . FIG. 11 shows the light distribution of the display device 20 of the comparative example in FIG. 10 .

FIG. 12 is a schematic cross-sectional view of a display device 20A of a comparative example. The difference between the display device 20A of the comparative example of FIG. 12 and the display device 10E of the embodiment of FIG. 6G is that the display device 20A of the comparative example of FIG. 12 does not have the reflective cup C of the display device 10E of FIG. 6G . No reflective layer is provided on the insulating layer 140 of the display device 20A of the example, but a reflective bank (Reflective Bank) 400 is provided on the periphery of the semiconductor structure 21 of the display device 20A of the comparative example shown in FIG. 12 . FIG. 13 shows the light distribution of the display device 20A of the comparative example shown in FIG. 12 .

FIG. 14 is a schematic cross-sectional view of a display device 20B of a comparative example. The difference between the display device 20B of the comparative example of FIG. 14 and the display device 10E of the embodiment of FIG. 6G is that the display device 20B of the comparative example of FIG. 14 does not have the reflective cup C of the display device 10E of FIG. 6G , but the comparison of FIG. In the example display device 20B, a reflective layer 162H is provided on the insulating layer 140 . FIG. 15 shows the light distribution of the display device 20B of the comparative example shown in FIG. 14 .

Comparing Fig. 9 with Fig. 11, Fig. 13 and Fig. 15, it can be found that the light distribution of the display device 10E of the embodiment of Fig. 6G is better than that of the display device 20 of the comparative example of Fig. 10 and the display device 20A of the comparative example of Fig. 12 The display device 20B of the comparative example shown in FIG. 14 is concentrated in the forward direction. Therefore, it can be proved that the forward light extraction efficiency of the display device 20 according to an embodiment of the present invention is high.

10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 20, 20A, 20B: display device 1: Growth substrate 2: Epitaxial structure 2a: top surface 2b: side wall 3: Die 4: carrier 5: Light emitting element 21: Semiconductor Structures 21a: First surface 21b: Second surface 21c: side wall 21d: Junction 41: Carrier board 42: Adhesive layer 100: buffer layer 102: surface 110: first type semiconductor layer 112: Platform Department 114: High Terrace 120: Active layer 130: Second-type semiconductor layer 140: insulating layer 140a: First contact window 140b: Second contact window 142: Extension 142a: Inner surface 142b: External surface 142c: end face 144, 146: Section 152, 152E, 152F: first electrode 154: Second electrode 160, 160A: layer of reflective material 162, 162A, 162B, 162C, 162D, 162F, 162G, 162H: reflective layer 200: Driver backplane 210: First Pad 220: Second pad 300: protective adhesive layer 400: Reflecting Dike A: gap C: reflector cup G: Gap k1: direction

1A to 1G are schematic cross-sectional views of a manufacturing process of a display device 10 according to an embodiment of the present invention. 2A to 2G are schematic cross-sectional views of the manufacturing process of the display device 10A according to an embodiment of the present invention. 3A to 3G are schematic cross-sectional views of the manufacturing process of the display device 10B according to an embodiment of the present invention. 4A to 4G are schematic cross-sectional views of the manufacturing process of the display device 10C according to an embodiment of the present invention. 5A to 5F are schematic cross-sectional views of the manufacturing process of the display device 10D according to an embodiment of the present invention. 6A to 6G are schematic cross-sectional views of the manufacturing process of the display device 10E according to an embodiment of the present invention. 7A to 7G are schematic cross-sectional views of the manufacturing process of the display device 10F according to an embodiment of the present invention. 8A to 8F are schematic cross-sectional views of the manufacturing process of the display device 10G according to an embodiment of the present invention. FIG. 9 shows the light distribution of the display device 10E shown in FIG. 6G . FIG. 10 is a schematic cross-sectional view of a display device 20 of a comparative example. FIG. 11 shows the light distribution of the display device 20 of the comparative example in FIG. 10 . FIG. 12 is a schematic cross-sectional view of a display device 20A of a comparative example. FIG. 13 shows the light distribution of the display device 20A of the comparative example shown in FIG. 12 . FIG. 14 is a schematic cross-sectional view of a display device 20B of a comparative example. FIG. 15 shows the light distribution of the display device 20B of the comparative example shown in FIG. 14 .

5: Light emitting element 10: Display device 21: Semiconductor Structures 21a: First surface 21b: Second surface 21c: side wall 21d: Junction 110: first type semiconductor layer 120: Active layer 130: Second-type semiconductor layer 140: insulating layer 140a: First contact window 140b: Second contact window 142: Extension 142a: Inner surface 142b: External surface 142c: end face 146: part 152: first electrode 154: Second electrode 162: reflective layer 200: Driver backplane 210: First Pad 220: Second pad 300: protective adhesive layer C: reflector cup G: Gap k1: direction

Claims (9)

A display device comprising: a driving backplane; and a light emitting element disposed on the driving backplane and electrically connected to the driving backplane, wherein the light emitting element comprises: a semiconductor structure including a first type semiconductor layer, a second type semiconductor layer and an active layer disposed between the first type semiconductor layer and the second type semiconductor layer; a first electrode electrically connected to the first type semiconductor layer of the semiconductor structure ; a second electrode electrically connected to the second-type semiconductor layer of the semiconductor structure; an insulating layer, wherein the semiconductor structure has a first surface facing away from the driving backplane and a first surface facing the driving backplane Two surfaces and a sidewall connecting the first surface and the second surface, the insulating layer covers at least the sidewall of the semiconductor structure and does not cover the first surface of the semiconductor structure, the insulating layer has an extension, the extension a portion extending from a boundary between the sidewall of the semiconductor structure and the first surface in a direction away from the driving backplane; and a reflective layer, wherein at least a part of the reflective layer is disposed on the extending portion of the insulating layer; the The insulating layer further covers the second surface of the semiconductor structure, and covers a part of the insulating layer on the second surface of the semiconductor structure with the drive There is a gap between the backboards. The display device as claimed in claim 1, wherein the semiconductor structure, the extension of the insulating layer and the at least part of the reflective layer form a reflective cup, and the display device further includes: a protective adhesive layer covering the driving back plate and the light-emitting element, and fill the reflective cup. The display device according to claim 1, wherein the extension of the insulating layer has an inner surface, an outer surface and an end surface, the inner surface is located between the outer surface and the semiconductor structure, and the end surface is connected to the inner surface and the outer surface; the reflective layer is arranged on the outer surface and the end surface of the extension part but not on the inner surface of the extension part. The display device according to claim 3, wherein a part of the insulating layer covers the second surface of the semiconductor structure, and the reflective layer is further disposed on the part of the insulating layer. The display device according to claim 1, wherein the extension of the insulating layer has an inner surface, an outer surface and an end surface, the inner surface is located between the outer surface and the semiconductor structure, and the end surface is connected to the inner surface and the outer surface, the reflective layer is disposed on the outer surface, the inner surface and the end surface of the extension part. The display device as claimed in claim 1, wherein the reflective layer comprises a distributed Bragg reflector. The display device according to claim 1, wherein the extension of the insulating layer has an inner surface, an outer surface and an end surface, the inner surface is located on the outer surface Between the semiconductor structure, the end surface connects the inner surface and the outer surface, and the first electrode of the light emitting element is arranged on the end surface of the extension part of the insulating layer. The display device according to claim 7, wherein the first electrode of the light emitting element is further disposed on the inner surface of the extension portion of the insulating layer. The display device as claimed in item 7, wherein at least a part of the reflective layer is in contact with the first surface of the semiconductor structure to be electrically connected to the first type semiconductor layer, and the first electrode is electrically connected to the reflective layer.

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