TWI790964B - Package structure with magnetocaloric material - Google Patents
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Abstract
Description
本發明涉及一種半導體的封裝結構,尤指是一種具磁熱材料的封裝結構。The invention relates to a semiconductor package structure, especially a package structure with magnetocaloric material.
半導體封裝(semiconductor package)為電晶體製程後端最重要的製程之一,當半導體元元件核心或積體電路等從晶圓上刻蝕出來並切割成為獨立的晶粒以後,在封裝階段,將一個或數個晶粒與半導體封裝組裝、灌封為一體,如此為晶粒提供抗衝擊、耐水氣等保護,並且同時晶粒之電性連接點亦藉由封裝製程與外部電路連接的引腳或觸點;半導體製程技術仍持續精進,電晶體效能不斷增長,電晶體尺寸亦隨著進步不斷縮小,如此已實現將多種功能,如:處理器、記憶體、邏輯運算單元等整合進單一電晶體,或將各不同功能之電晶體以2.5D、3D等立體封裝結構將電晶體進行異質整合;而前述無論是現今被廣泛應用的封裝方法,或有潛力作為延續摩爾定律的先進封裝方式,此些封裝方法需良好的散熱效率,現今雖有以下專利針對散熱進行改進,如:專利公開號TW202103277A,其係利用石墨材料增進散熱效率,另有專利公開號 CN213459708U、專利公開號CN213304111U等,然而,為應付效能日趨進步且體積越趨減小的電晶體晶片,散熱方案仍需改進;據此,如何能在原有的封裝架構下,有效的增加封裝結構的散熱效率,此乃待須解決之問題。Semiconductor package (semiconductor package) is one of the most important processes in the back end of the transistor manufacturing process. When the core of semiconductor components or integrated circuits are etched from the wafer and cut into independent chips, in the packaging stage, the One or several dies are assembled and potted together with the semiconductor package, so as to provide protection for the dies against impact, water vapor, etc., and at the same time, the electrical connection points of the dies are also connected to the pins of the external circuit through the packaging process or contacts; semiconductor process technology continues to improve, the performance of transistors continues to increase, and the size of transistors continues to shrink with the progress, so that multiple functions, such as: processors, memories, and logical operation units, have been integrated into a single circuit. Crystal, or transistors with different functions in 2.5D, 3D and other three-dimensional packaging structures to integrate transistors heterogeneously; and the aforementioned packaging methods are widely used today, or have the potential to be an advanced packaging method that continues Moore's Law. These packaging methods require good heat dissipation efficiency. Although there are the following patents to improve heat dissipation, such as: Patent Publication No. TW202103277A, which uses graphite materials to improve heat dissipation efficiency, and Patent Publication No. CN213459708U, Patent Publication No. CN213304111U, etc., however , in order to cope with the increasingly improved performance and smaller volume of transistor chips, the heat dissipation scheme still needs to be improved; accordingly, how to effectively increase the heat dissipation efficiency of the package structure under the original package structure is an issue to be solved question.
有鑒於上述的問題,本發明人係依據多年來從事相關行業的經驗,針對封裝結構進行改進;緣此,本發明之主要目的在於提供一種利用磁製冷效應有效提升散熱效率之具磁熱材料的封裝結構。In view of the above-mentioned problems, the present inventor has improved the packaging structure based on years of experience in related industries; therefore, the main purpose of the present invention is to provide a magnetic-caloric material that utilizes the magnetic refrigeration effect to effectively improve heat dissipation efficiency. package structure.
為達上述的目的,本發明具磁熱材料的封裝結構,藉由將基板添加有一磁熱材料,如:氧化釓Gd 2O 3、釓鍺矽化合物Gd 5Ge 2Si 2等材料,係可使封裝結構在開關導通時,可藉由磁熱效應產生的磁製冷作用幫助封裝結構內的裸晶進行散熱,係可在原有的封裝架構下,能有效的增加封裝結構的散熱效率。 In order to achieve the above-mentioned purpose, the packaging structure with magneto-caloric material of the present invention can be achieved by adding a magneto-caloric material to the substrate, such as: gadolinium oxide Gd 2 O 3 , gadolinium-germanium-silicon compound Gd 5 Ge 2 Si 2 and other materials. When the package structure is turned on, the magnetic cooling effect generated by the magnetocaloric effect can help the bare crystal in the package structure to dissipate heat, which can effectively increase the heat dissipation efficiency of the package structure under the original package structure.
為使 貴審查委員得以清楚了解本發明之目的、技術特徵及其實施後之功效,茲以下列說明搭配圖示進行說明,敬請參閱。In order to enable your examiner to clearly understand the purpose, technical features and effects of the present invention after implementation, the following descriptions are illustrated with illustrations, please refer to them.
請參閱「圖1」,圖1為本發明之系統架構圖,如圖所示,本發明之具磁熱材料的封裝結構1包含有一基板11、一電連接結構12、一裸晶13、及一模封體14,以下對各構件作例示及說明:
(1) 基板11,其可為導線框架(lead frame)供以乘載裸晶13,其主要由銅合金或鎳鐵合金等金屬材料所組成,且在製造時將添加有一磁熱材料,其添加量可例如為主材料重量百分比1%~10%,並透過熔融的方式混入銅合金或鎳鐵合金作為基板11之原料;其中,磁熱材料可例如為氧化釓Gd
2O
3、釓鍺矽化合物Gd
5Ge
2Si
2等材料;較佳的,基板11可包含具有定位裸晶13的一晶座、複數個內引腳、及複數個外引腳,其中,在實施時,內引腳與外引腳為被模封體14覆蓋部分,外引腳則未被模封體14,內引腳與外引腳兩者皆屬於基板11之一部分,特此澄明。
(2) 電連接結構12兩端分別組設於電性接點及內引腳,供以使裸晶13與外電路形成電性連接,電連接結構12可例如為打線接合(Wire bonding)、球柵陣列封裝(Ball grid array、BGA)、覆晶接合(Flip-chip)或捲帶式自動接合(Tape-Automated Bonding,TAB)等製程方式所對應的金屬線、導電金屬球、膠捲式接腳等,但凡得以實現將裸晶13與外電路形成電性連接之方式皆可實施。
(3) 裸晶13可例如為雙極性電晶體(BJT)和場效應電晶體(FET)等完成積體電路的半導體元件及電極的製作之裸晶(die),其具有複數個電性接點,作為裸晶13與外電路電性連接之位置。
(4) 模封體14(Compound)成型於基板11上並包覆電連接結構12、裸晶13、及內引腳,模封體14之材料組成可例如為環氧樹酯(Epoxy)、或將環氧樹酯混摻有金屬、陶瓷材料其中一種或其組合之複合材料,模封體14供以使具磁熱材料的封裝結構1具備良好的抗衝擊及耐候特性。
Please refer to "Fig. 1", Fig. 1 is a system architecture diagram of the present invention, as shown in the figure, the
請參閱「圖2」,圖2為本發明之實施示意圖,如圖所示,本發明之具磁熱材料的封裝結構1供以封裝各式積體電路,當封裝完成之積體電路開關導通截止產生變化時,由外部電路經由基板11流入裸晶13之一電流將會感應出一磁場變化,此時,基板11塗佈的磁熱材料將因磁場變化增加散熱效率;具體來說,當外部電路由基板11流入電流而感應出磁場時,基板11中的磁熱材料之磁矩將順著磁場方向規則排列,材料的磁熵和熱容都減少,此時將放出熱量,而放出的熱量由基板11以熱傳導散失,而在外部電流停止流入時,基板11所感應的磁場消失,磁矩將恢復為無定向狀態,以此產生磁製冷現象有效降低溫度,如此,不僅可藉由磁製冷現象達到散熱效果,更可因在磁場產生與消失時,所產生的溫度變化使基板11與外界形成較高的溫差,使熱傳導能維持在較高的效率。Please refer to "Fig. 2". Fig. 2 is a schematic diagram of the implementation of the present invention. As shown in the figure, the
請參閱「圖3」,圖3為本發明之實施例(一),實施例(一)以覆晶接合(Flip-chip)作為示例,如圖所示,裸晶13之電性接點呈朝下樣態,並以導電金屬球(Bump)作為電連接結構12與基板11完成電性連接,且電連接結構12、裸晶13皆被模封體14包覆,如此完成具磁熱材料的封裝結構1,並可在各裸晶13被開關時,有效達到磁製冷散熱之功效。Please refer to "Fig. 3". Fig. 3 is an embodiment (1) of the present invention. Embodiment (1) takes flip-chip bonding (Flip-chip) as an example. As shown in the figure, the electrical contact of the
請參閱「圖4」,圖4為本發明之實施例(二),如圖所示,本發明之具磁熱材料的封裝結構1可包含一矽中介板15(Silicon interposer),其具有複數矽中介板微凸塊151(Micro Bump)、內金屬線、及複數矽中介板穿孔152(TSV),矽中介板微凸塊151供以使各裸晶13之電性接點及矽中介板15之內金屬線呈電性連接,以此可使矽中介板15連接不同裸晶13的電子訊號;由於各內金屬線與矽中介板穿孔152電性連接,接著再透過矽中介板穿孔152來連結矽中介板15另一端的電連接結構12(本圖以金屬凸塊(Solder Bump)呈現),電連接結構12則與具有磁熱材料的基板11完成電性連接,且電連接結構12、裸晶13、矽中介板15皆被模封體14包覆,如此完成2.5D立體的具磁熱材料的封裝結構1,並可在各裸晶13被開關時,有效達到磁製冷散熱之功效。Please refer to "Fig. 4". Fig. 4 is an embodiment (2) of the present invention. As shown in the figure, the
請參閱「圖5」,圖5為本發明之實施例(三),呈上述2.5D的立體封裝結構,各裸晶13具有與電性接點呈電性連接的複數裸晶微凸塊131及複數裸晶穿孔132,裸晶微凸塊131亦與裸晶穿孔132相互電性連接,各裸晶13可透過裸晶微凸塊131上下堆疊並相互電性連接,而完成堆疊的各裸晶13,及如前述與矽中介板15呈電性連接,矽中介板15則與基板11亦完成電性連接,且電連接結構12、裸晶13、矽中介板15皆被模封體14包覆,如此完成3D立體的具磁熱材料的封裝結構1,並可在各裸晶13被開關時,有效達到磁製冷散熱之功效。Please refer to "Fig. 5", Fig. 5 is an embodiment (3) of the present invention, which is the above-mentioned 2.5D three-dimensional packaging structure, and each bare die 13 has a plurality of bare die micro-bumps 131 electrically connected to electrical contacts and a plurality of
請參閱「圖6」,圖6為本發明之工作溫度比較表,圖中顯示了分別以未添加磁熱材料、5%磁熱材料、10%磁熱材料的銅合金作為基板的成分中,在金氧半場效電晶體(MOSFET)工作時的表面溫度差異,由表格可知,在金氧半場效電晶體以具磁熱材料的封裝結構進行封裝時,將表現出較佳的散熱效果,與未使用本發明之具磁熱材料的封裝結構相比(基板未添加磁熱材料),工作溫度具有顯著的下降表現。Please refer to "Fig. 6". Fig. 6 is a comparison table of operating temperatures of the present invention. The figure shows that copper alloys with no added magnetocaloric material, 5% magnetocaloric material, and 10% magnetocaloric material are used as the substrate composition. The surface temperature difference when the metal oxide half field effect transistor (MOSFET) is working can be seen from the table, when the metal oxide half field effect transistor is packaged in a package structure with a magnetocaloric material, it will show a better heat dissipation effect, and Compared with the encapsulation structure without using the magnetocaloric material of the present invention (with no magnetocaloric material added to the substrate), the operating temperature has a significant drop performance.
由上所述可知,本發明之具磁熱材料的封裝結構,主要透過以磁熱材料作為基板之原料,利用外電流所產生的磁場,改變磁熱材料之磁矩,以此不僅可以磁製冷效果達到良好的降溫效果,進一步可透過溫差增加封裝結構的散熱效率,本發明可應用於發展成熟的各式封裝結構,亦可應用於目前前瞻的立體封裝技術;本發明具磁熱材料的封裝結構據以實施後,確實可以解決能在原有的封裝架構下,有效的增加封裝結構的散熱效率,達到提供一種利用磁製冷效應有效提升散熱效率之具磁熱材料的封裝結構之目的。It can be seen from the above that the package structure with magnetocaloric material of the present invention mainly uses the magnetocaloric material as the raw material of the substrate, and uses the magnetic field generated by the external current to change the magnetic moment of the magnetocaloric material, so that not only magnetic refrigeration can be achieved. The effect achieves a good cooling effect, and can further increase the heat dissipation efficiency of the packaging structure through the temperature difference. The present invention can be applied to various mature packaging structures, and can also be applied to the current forward-looking three-dimensional packaging technology; the packaging of the present invention has a magnetic thermal material After the structure is implemented, it can indeed solve the problem of effectively increasing the heat dissipation efficiency of the packaging structure under the original packaging structure, and achieve the purpose of providing a packaging structure with magnetocaloric materials that effectively improves heat dissipation efficiency by using the magnetic refrigeration effect.
唯,以上所述者,僅為本發明之較佳之實施例而已,並非用以限定本發明實施之範圍;任何熟習此技藝者,在不脫離本發明之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本發明之專利範圍內。However, the above descriptions are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; anyone skilled in this art can make equivalent changes and modifications without departing from the spirit and scope of the present invention , should be covered within the patent scope of the present invention.
綜上所述,本發明係具有「產業利用性」、「新穎性」與「進步性」等專利要件;申請人爰依專利法之規定,向 鈞局提起發明專利之申請。To sum up, the present invention has the patent requirements of "industrial applicability", "novelty" and "progressiveness". The applicant filed an application for an invention patent with the Jun Bureau in accordance with the provisions of the Patent Law.
1:具磁熱材料的封裝結構 11:基板 12:電連接結構 13:裸晶 14:模封體 131:裸晶微凸塊 132:裸晶穿孔 15:矽中介板 151:矽中介板微凸塊 152:矽中介板穿孔1: Encapsulation structure with magnetocaloric material 11: Substrate 12: Electrical connection structure 13: Bare crystal 14: Molded body 131:Bare Die Micro Bump 132: Bare crystal through hole 15: Silicon interposer 151: Silicon interposer micro-bump 152: Silicon interposer perforation
圖1,為本發明之系統架構圖。 圖2,為本發明之實施示意圖。 圖3,為本發明之實施例(一)。 圖4,為本發明之實施例(二)。 圖5,為本發明之實施例(三)。 圖6,為本發明之工作溫度比較表。 Fig. 1 is a system architecture diagram of the present invention. Fig. 2 is a schematic diagram of the implementation of the present invention. Fig. 3 is an embodiment (1) of the present invention. Fig. 4 is the embodiment (2) of the present invention. Fig. 5 is the embodiment (3) of the present invention. Fig. 6 is a comparison table of the working temperature of the present invention.
1:具磁熱材料的封裝結構 1: Encapsulation structure with magnetocaloric material
11:基板 11: Substrate
12:電連接結構 12: Electrical connection structure
13:裸晶 13: Bare crystal
14:模封體 14: Molded body
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103363715A (en) * | 2012-03-29 | 2013-10-23 | 株式会社东芝 | Magnetic refrigeration device and magnetic refrigeration system |
US20170178787A1 (en) * | 2015-12-18 | 2017-06-22 | Texas Instruments Incorporated | Methods and Apparatus for Isolation Barrier with Integrated Magnetics for High Power Modules |
US20170188455A1 (en) * | 2015-12-26 | 2017-06-29 | Intel Corporation | Magnetic particle embedded flex or printed flex for magnetic tray or electro-magnetic carrier |
WO2019046763A1 (en) * | 2017-09-01 | 2019-03-07 | Texas Instruments Incorporated | Self-assembly of semiconductor die onto a leadframe using magnetic fields |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103363715A (en) * | 2012-03-29 | 2013-10-23 | 株式会社东芝 | Magnetic refrigeration device and magnetic refrigeration system |
US20170178787A1 (en) * | 2015-12-18 | 2017-06-22 | Texas Instruments Incorporated | Methods and Apparatus for Isolation Barrier with Integrated Magnetics for High Power Modules |
US20170188455A1 (en) * | 2015-12-26 | 2017-06-29 | Intel Corporation | Magnetic particle embedded flex or printed flex for magnetic tray or electro-magnetic carrier |
WO2019046763A1 (en) * | 2017-09-01 | 2019-03-07 | Texas Instruments Incorporated | Self-assembly of semiconductor die onto a leadframe using magnetic fields |
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