TWI790412B - Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof - Google Patents

Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof Download PDF

Info

Publication number
TWI790412B
TWI790412B TW108142930A TW108142930A TWI790412B TW I790412 B TWI790412 B TW I790412B TW 108142930 A TW108142930 A TW 108142930A TW 108142930 A TW108142930 A TW 108142930A TW I790412 B TWI790412 B TW I790412B
Authority
TW
Taiwan
Prior art keywords
hole
aperture
base material
hole structure
substrate
Prior art date
Application number
TW108142930A
Other languages
Chinese (zh)
Other versions
TW202120328A (en
Inventor
呂春福
Original Assignee
財團法人工業技術研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 財團法人工業技術研究院 filed Critical 財團法人工業技術研究院
Priority to TW108142930A priority Critical patent/TWI790412B/en
Publication of TW202120328A publication Critical patent/TW202120328A/en
Application granted granted Critical
Publication of TWI790412B publication Critical patent/TWI790412B/en

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/10Geothermal energy

Abstract

A hole structure and a manufacturing method thereof, and a different material joint structure and a manufacturing method thereof are provided. The different material joint structure includes a first substrate and a second substrate. The first substrate has a first surface, a second surface, and a hole structure. The hole structure is formed between the first surface and the second surface. The hole structure has a first aperture, a second aperture, and a third aperture in sequence along a depth direction, which is the direction from the first surface toward the second surface. The first aperture is located on the first surface, and the second aperture is smaller than the first aperture and the third aperture. The second substrate is embedded in the hole structure.

Description

孔洞結構及其製作方法以及包含孔洞結構之異材質接合結構及其製作方法Hole structure and manufacturing method thereof, and dissimilar material joining structure including hole structure and manufacturing method thereof

本揭露是有關於一種結構及形成該結構的方法,且特別是有關於一種孔洞結構及其製作方法以及異材質接合結構及其製作方法。 The present disclosure relates to a structure and a method for forming the structure, and particularly relates to a hole structure and a manufacturing method thereof, and a dissimilar material joint structure and a manufacturing method thereof.

複合結構塗層通用於許多領域,其中將複合結構塗層應用於地熱系統開發以防止地熱管鏽蝕為其中一個應用領域。然而,異質材料的接合良率一直是難以克服的問題。 Composite structural coatings are commonly used in many fields, among which the application of composite structural coatings in the development of geothermal systems to prevent corrosion of geothermal pipes is one of the application areas. However, the bonding yield of dissimilar materials has always been an insurmountable problem.

傳統塗裝業者使用的噴砂或磷酸鹽處理,經常導致金屬基材表面殘留應力或形成疏鬆結構而降低了抗蝕能力,一旦表面塗裝的皮膜有細微刮傷即一發不可收拾,地熱鹽滷水滲入塗層介面會導致複合結構塗層剝落,喪失抗蝕功能。 The sandblasting or phosphate treatment used by traditional coating industry often leads to residual stress on the surface of the metal substrate or the formation of a loose structure, which reduces the corrosion resistance. Once the surface coating film is slightly scratched, it will be out of control. Penetration into the coating interface will cause the coating of the composite structure to peel off and lose its anti-corrosion function.

由上述可知,如何使塗層能夠與基材緊密嵌合,是目前亟待解決的問題。 From the above, it can be seen that how to make the coating closely fit with the substrate is an urgent problem to be solved at present.

本揭露提供一種提供良好嵌合作用的孔洞結構。 The present disclosure provides a pore structure that provides good fit.

本揭露提供一種形成上述孔洞結構的孔洞結構的製作方法。 The present disclosure provides a method for fabricating the hole structure forming the above hole structure.

本揭露提供一種具備良好嵌合效果的異材質接合結構。 The present disclosure provides a joint structure of dissimilar materials with good fitting effect.

本揭露提供一種形成上述異材質接合結構的異材質接合結構的製作方法。 The present disclosure provides a method for fabricating the dissimilar material joint structure forming the above dissimilar material joint structure.

本揭露的一種孔洞結構自基材的第一表面以朝向基材的第二表面的深度方向形成在基材的內部,其中沿著深度方向,孔洞結構依序具有第一孔徑、第二孔徑及第三孔徑,第一孔徑位於第一表面,而第二孔徑小於第一孔徑及第三孔徑。 A hole structure of the present disclosure is formed inside the substrate from the first surface of the substrate toward the depth direction of the second surface of the substrate, wherein along the depth direction, the hole structure has a first pore diameter, a second pore diameter and For the third aperture, the first aperture is located on the first surface, and the second aperture is smaller than the first aperture and the third aperture.

本揭露的一種孔洞結構的製作方法,包括:提供基材;於基材的第一表面形成第一孔;於基材的第一表面鍍上遮蔽層,其中遮蔽層填入第一孔的部分中;以及對其上鍍有遮蔽層的基材進行蝕刻,以形成孔洞結構。 A method for manufacturing a hole structure disclosed in the present disclosure, comprising: providing a base material; forming a first hole on the first surface of the base material; plating a masking layer on the first surface of the base material, wherein the masking layer fills the part of the first hole and etching the substrate coated with the masking layer to form a hole structure.

本揭露的一種異材質接合結構包括一第一基材以及一第二基材。第一基材具有第一表面、第二表面以及孔洞結構,孔洞結構形成在第一表面及第二表面之間,且沿著自第一表面朝向第二表面的深度方向,孔洞結構依序具有第一孔徑、第二孔徑及第三孔徑,第一孔徑位於第一表面,而第二孔徑小於第一孔徑及第三孔徑。第二基材嵌合於孔洞結構中。 A dissimilar material bonding structure of the present disclosure includes a first base material and a second base material. The first substrate has a first surface, a second surface and a hole structure, the hole structure is formed between the first surface and the second surface, and along the depth direction from the first surface toward the second surface, the hole structure has sequentially The first aperture, the second aperture and the third aperture, the first aperture is located on the first surface, and the second aperture is smaller than the first aperture and the third aperture. The second base material is embedded in the hole structure.

本揭露的一種異材質接合結構的製作方法至少包括下列步驟:提供第一基材;於第一基材的第一表面形成第一孔;於第一基材的第一表面鍍上一遮蔽層,其中遮蔽層填入第一孔的部分中;對其上鍍有遮蔽層的第一基材進行蝕刻,以形成孔洞結構;以及於第一基材的第一表面上塗裝第二基材的材料,其中第二基材的材料填入孔洞結構中。 A manufacturing method of a dissimilar material bonding structure disclosed in the present disclosure at least includes the following steps: providing a first base material; forming a first hole on the first surface of the first base material; coating a masking layer on the first surface of the first base material , wherein the shielding layer is filled into the portion of the first hole; the first substrate coated with the shielding layer is etched to form a hole structure; and a second substrate is coated on the first surface of the first substrate material, wherein the material of the second substrate fills the hole structure.

基於上述,經由上述的孔洞結構的製作方法可以在基材上形成形狀特殊的孔洞結構,且透過此種孔洞結構的使用,可增加異材質接合的嵌合穩定度。 Based on the above, a hole structure with a special shape can be formed on the base material through the above-mentioned hole structure manufacturing method, and through the use of this hole structure, the fitting stability of dissimilar material bonding can be increased.

110、310:第一基材 110, 310: the first substrate

110a、310a:第一表面 110a, 310a: first surface

110b:第二表面 110b: second surface

120:圖案化遮罩 120: Patterned mask

130:遮蔽層 130: masking layer

140、340:第二基材 140, 340: second substrate

200、400:異材質接合結構 200, 400: joint structure of different materials

H1:第一孔 H1: the first hole

H2、H23、H24:孔洞結構 H2, H23, H24: hole structure

H21:楔形部 H21: Wedge

H22:球部 H22: Ball

D:深度方向 D: Depth direction

L1:第一孔徑 L1: first aperture

L2:第二孔徑 L2: second aperture

L3:第三孔徑 L3: third aperture

圖1A至圖1F為本揭露第一實施例的異材質接合結構的製作流程圖。 FIG. 1A to FIG. 1F are flow charts of the fabrication of the dissimilar material bonding structure according to the first embodiment of the present disclosure.

圖2是在第一基材的第一表面上未形成有圖案化遮罩的情況下對第一基材進行蝕刻的示意圖。 FIG. 2 is a schematic diagram of etching the first substrate without forming a patterned mask on the first surface of the first substrate.

圖3A與圖3B為異材質接合結構應用在中空的管時的示意圖。 FIG. 3A and FIG. 3B are schematic diagrams of the joint structure of dissimilar materials applied to a hollow tube.

圖4A至圖4H為第一孔在第一基材上的示意圖。 4A to 4H are schematic views of the first hole on the first substrate.

[第一實施例] [first embodiment]

圖1A至圖1F為本揭露第一實施例的異材質接合結構的製作流程圖。 FIG. 1A to FIG. 1F are flow charts of the fabrication of the dissimilar material bonding structure according to the first embodiment of the present disclosure.

請依序參考圖1A至圖1F。如圖1A所示提供第一基材110,並且在第一基材110的第一表面110a上形成圖案化遮罩120。第一基材110可選用金屬,例如鐵、銅、鋁、鎂,或是不鏽鋼,製作而成。此外,第一基材110也不限為平板狀,也有可能是中空管狀,也就是說,第一表面110a不限為平面,也可能是弧形面。 Please refer to FIG. 1A to FIG. 1F in sequence. As shown in FIG. 1A , a first substrate 110 is provided, and a patterned mask 120 is formed on the first surface 110 a of the first substrate 110 . The first base material 110 can be made of metal, such as iron, copper, aluminum, magnesium, or stainless steel. In addition, the first base material 110 is not limited to a flat plate shape, and may also be a hollow tube shape, that is, the first surface 110 a is not limited to a flat surface, and may also be an arc-shaped surface.

如圖1B所示,對其第一表面110a上形成有圖案化遮罩120的第一基材110進行第一次蝕刻,而本實施例中的第一次蝕刻為局部蝕刻,然後移除圖案化遮罩120,便如圖1C所示的在第一基材110的深度方向D上形成第一孔H1,其中深度方向D是指第一表面110a朝向位於相對側的第二表面110b的方向。同樣的,第二表面110b也不限為平面,也可能是弧形面。 As shown in FIG. 1B, the first substrate 110 with the patterned mask 120 formed on its first surface 110a is etched for the first time, and the first etching in this embodiment is partial etching, and then the pattern is removed. The mask 120 is formed to form a first hole H1 in the depth direction D of the first substrate 110 as shown in FIG. 1C, wherein the depth direction D refers to the direction in which the first surface 110a faces the second surface 110b on the opposite side. . Likewise, the second surface 110b is not limited to a plane, and may also be an arcuate surface.

如圖1D所示,在第一基材110的第一表面110a上塗裝遮蔽層130,其中可以依照需求而選用塗刷、轉印、電鍍、蒸鍍或濺鍍的方式於第一表面110a上形成遮蔽層130。具體地說,遮蔽層130填入第一孔H1中並且沿著第一孔H1的輪廓而在第一孔H1的表面上形成薄層。 As shown in FIG. 1D, a masking layer 130 is coated on the first surface 110a of the first substrate 110, wherein the method of painting, transfer printing, electroplating, vapor deposition or sputtering can be selected on the first surface 110a according to requirements. A masking layer 130 is formed thereon. Specifically, the shielding layer 130 is filled into the first hole H1 and forms a thin layer on the surface of the first hole H1 along the contour of the first hole H1.

須說明的是,遮蔽層130選用活性低於第一基材110的活性的材料以形成,其中遮蔽層130的材料可選自為鎳、銅、鉻、鉛、銀、金及高分子材料中的其中一種。在一種實施例中,常見 的金屬活性排列大致如下:鋁>鋅>鐵>鈷>鎳>錫>鉛>銅>銀>鉑>金,然而腐蝕生成物作用的活性排列會因溶液種類、濃度、溫度等而有變化,例如在海水中的金屬活性排列,因鉛表面形成的反應物比銅表面形成的反應物更不活性,因此整體排列順序還要依照蝕刻液的條件調整。 It should be noted that the masking layer 130 is formed by selecting a material whose activity is lower than that of the first substrate 110, wherein the material of the masking layer 130 can be selected from nickel, copper, chromium, lead, silver, gold and polymer materials. one of the In one embodiment, the common The active arrangement of the metals is roughly as follows: aluminum>zinc>iron>cobalt>nickel>tin>lead>copper>silver>platinum>gold, but the active arrangement of corrosion products will vary due to the type, concentration and temperature of the solution. For example, in the active arrangement of metals in seawater, the reactants formed on the surface of lead are less active than those formed on the surface of copper, so the overall arrangement order should be adjusted according to the conditions of the etching solution.

在一種實施例中,第一基材110的材料可為鐵、銅、鋁、鎂或其合金中的其中一種;遮蔽層130的材料可選自鎳、銅、鉻、鉛、銀、金及高分子材料中的其中一種。 In one embodiment, the material of the first substrate 110 can be one of iron, copper, aluminum, magnesium or alloys thereof; the material of the shielding layer 130 can be selected from nickel, copper, chromium, lead, silver, gold and One of the polymer materials.

此外,在基材的第一表面110a鍍上遮蔽層130的步驟中,邊緣效應引發遮蔽層130在第一表面110a與第一孔H1相連的轉角處的厚度厚於遮蔽層130其他處的厚度,且沿著深度方向D,越深入第一孔H1,遮蔽層130的厚度漸薄。 In addition, in the step of coating the shielding layer 130 on the first surface 110a of the substrate, the thickness of the shielding layer 130 at the corner where the first surface 110a is connected to the first hole H1 is thicker than that at other places of the shielding layer 130 caused by the edge effect. , and along the depth direction D, the deeper the first hole H1 goes, the thickness of the shielding layer 130 becomes thinner.

接著如圖1E所示,對其第一表面110a上鍍有遮蔽層130的第一基材110進行蝕刻。確切地說,同時對遮蔽層130以及第一基材110進行蝕刻,以在第一基材110形成孔洞結構H2。 Next, as shown in FIG. 1E , the first substrate 110 coated with the masking layer 130 on the first surface 110 a is etched. Specifically, the masking layer 130 and the first substrate 110 are etched simultaneously to form the hole structure H2 in the first substrate 110 .

承上述,由於第一基材110的活性優於遮蔽層130的活性,因此在進行第二次蝕刻時,遮蔽層130被蝕刻的速率慢於第一基材110被蝕刻的速率,且因此從如圖1E的截面圖看來,沿著深度方向D,被形成的孔洞結構H2有點類似於葫蘆狀,中間具有頸縮部。 Based on the above, since the activity of the first substrate 110 is higher than that of the masking layer 130, the masking layer 130 is etched at a slower rate than the first substrate 110 when the second etching is performed, and thus from From the cross-sectional view of FIG. 1E , along the depth direction D, the formed hole structure H2 is somewhat similar to a gourd shape, with a constricted portion in the middle.

具體而言,沿著深度方向D,孔洞結構H2依序具有第一孔徑L1、第二孔徑L2及第三孔徑L3,其中第一孔徑L1位於第 一表面110a,而第二孔徑L2小於第一孔徑L1及第三孔徑L3。第一孔徑L1及第三孔徑L3可以是朝向第二孔徑L2而漸縮。 Specifically, along the depth direction D, the hole structure H2 has a first aperture L1, a second aperture L2 and a third aperture L3 in sequence, wherein the first aperture L1 is located at the a surface 110a, and the second aperture L2 is smaller than the first aperture L1 and the third aperture L3. The first aperture L1 and the third aperture L3 may be tapered toward the second aperture L2.

更確切地說,沿著深度方向D,孔洞結構H2大致由楔形部H21及球部H22共同形成,其中楔形部H21是由第一孔徑L1及第二孔徑L2所定義出來,而第三孔徑L3為球部H22的直徑。簡單地說,楔形部H21以及球部H22是以第二孔徑L2做為分界。 More precisely, along the depth direction D, the hole structure H2 is roughly formed by a wedge portion H21 and a ball portion H22, wherein the wedge portion H21 is defined by the first aperture L1 and the second aperture L2, and the third aperture L3 is the diameter of the spherical portion H22. In short, the wedge portion H21 and the ball portion H22 are separated by the second aperture L2.

附帶一提,蝕刻製程之後,可以在保留剩餘的遮蔽層130的情況下進行下一步驟;或者,也可以是在蝕刻製程之後移除剩餘的遮蔽層130,再進行下一步驟。 Incidentally, after the etching process, the next step can be performed with the remaining masking layer 130 retained; or, the remaining masking layer 130 can be removed after the etching process, and then the next step can be performed.

之後如圖1F所示,於第一基材110的第一表面110a上塗裝第二基材140的材料,其中第二基材140的材料填入孔洞結構H2中,以形成異材質接合結構200。第二基材140的材料可為選自尼隆、酚醛環氧、環氧樹脂、二氟乙烯、四氟乙烯、氧化矽、碳化矽、鑽石粉、碳管、石墨烯、聚合物纖維、礦物纖維及其組合性材料中的其中一種。在一種實施例中,可於尼隆、酚醛環氧、環氧樹脂、二氟乙烯及四氟乙烯等高分子材料的其中一種或其組合中,再加入氧化矽、碳化矽、鑽石粉、碳管、石墨烯、聚合物纖維及礦物纖維中的至少一種,以形成第二基材140。當製作第二基材140所選用的材料不同時,對於第一基材110所能提供的功效便不同。 Afterwards, as shown in FIG. 1F , the material of the second substrate 140 is coated on the first surface 110 a of the first substrate 110 , wherein the material of the second substrate 140 is filled into the hole structure H2 to form a joint structure of different materials. 200. The material of the second substrate 140 can be selected from nylon, phenolic epoxy, epoxy resin, difluoroethylene, tetrafluoroethylene, silicon oxide, silicon carbide, diamond powder, carbon tube, graphene, polymer fiber, mineral One of the fibers and their composite materials. In one embodiment, silicon oxide, silicon carbide, diamond powder, and carbon can be added to one or a combination of polymer materials such as nylon, novolak epoxy, epoxy resin, difluoroethylene, and tetrafluoroethylene. At least one of tubes, graphene, polymer fibers and mineral fibers to form the second substrate 140. When the materials selected for making the second base material 140 are different, the functions that can be provided to the first base material 110 are different.

由於第二基材140的材料填入孔洞結構H2中,因此第二基材140嵌合於孔洞結構H2中,且第二基材140嵌合入孔洞結構 H2中的部分適形於孔洞結構H2。 Since the material of the second substrate 140 is filled in the hole structure H2, the second substrate 140 is embedded in the hole structure H2, and the second substrate 140 is embedded in the hole structure The portion in H2 conforms to the hole structure H2.

由上述,可知,通過孔洞結構H2的特殊形狀,使得第二基材140與第一基材110之間的嵌合更為穩固。 From the above, it can be known that the fitting between the second base material 140 and the first base material 110 is more stable through the special shape of the hole structure H2.

通常複合結構塗層是利用不同的材料層疊而成。而因為不同的材料具有不同的熱膨脹係數,因此起因於溫度變化而導致的熱漲冷縮,容易讓複合結構塗層的各個基材間因為脹縮能力不同而彼此脫離,讓作為表層的塗層無法對基底層提供良好的保護,引發基底層的結構鏽蝕。 Usually composite structural coatings are formed by laminating different materials. And because different materials have different coefficients of thermal expansion, thermal expansion and contraction caused by temperature changes can easily cause the substrates of the composite structural coating to separate from each other due to different expansion and contraction capabilities, making the coating as the surface layer It cannot provide good protection for the base layer, causing structural corrosion of the base layer.

但是在本實施例中,通過特殊形狀的孔洞結構可以讓不同材料的第一基材110與第二基材140緊密地嵌合,即使在溫度有所變化的情況下,可以防止起因於不同的脹縮能力所引發的基材彼此脫離的現象。如此一來,可以延長異材質接合結構的使用壽命。 However, in this embodiment, the first base material 110 and the second base material 140 of different materials can be tightly fitted through the hole structure of a special shape, even if the temperature changes, it can prevent the The phenomenon that the substrates are separated from each other caused by the expansion and contraction ability. In this way, the service life of the dissimilar material bonding structure can be extended.

此外,填入孔洞結構H2中的第二基材140的材料可依據需求而選用。例如,選用前述的尼隆、酚醛環氧、環氧樹脂、二氟乙烯、四氟乙烯、氧化矽、碳化矽、鑽石粉、碳管、石墨烯、聚合物纖維、礦物纖維及其組合性材料中的其中一種作為第二基材140的材料時,可以增加異材質接合結構200的抗酸蝕、抗垢及抗沖蝕的能力。而當填入孔洞結構H2中的第二基材140的材料選用其他材料時,例如第二基材140的材料為四氟乙烯時,能夠增加異材質接合結構200的抗酸蝕的能力;又例如第二基材140的組合性材料含有石墨烯時,能夠增加異材質接合結構200的導熱的 能力。 In addition, the material of the second base material 140 filled in the hole structure H2 can be selected according to requirements. For example, choose the aforementioned nylon, phenolic epoxy, epoxy resin, difluoroethylene, tetrafluoroethylene, silicon oxide, silicon carbide, diamond powder, carbon tube, graphene, polymer fiber, mineral fiber and its composite materials When one of them is used as the material of the second base material 140 , the resistance to acid corrosion, scale and erosion of the dissimilar material joint structure 200 can be increased. And when the material of the second base material 140 filled in the hole structure H2 is selected from other materials, for example, when the material of the second base material 140 is tetrafluoroethylene, the acid corrosion resistance of the joint structure 200 of different materials can be increased; For example, when the composite material of the second base material 140 contains graphene, the heat conduction of the dissimilar material bonding structure 200 can be increased. ability.

[第二實施例] [Second embodiment]

本實施例與前述第一實施例相同,而其不同之處在於:如圖2所示,在第一基材110的第一表面110a上未形成有圖案化遮罩120的情況下對第一基材110進行蝕刻,以形成如圖1C所示的第一孔H1。 This embodiment is the same as the aforementioned first embodiment, and the difference is that: as shown in FIG. 2 , the first The substrate 110 is etched to form a first hole H1 as shown in FIG. 1C .

後續的製程及結構與前述第一實施例相同,因此不再重複說明。 Subsequent manufacturing processes and structures are the same as those of the aforementioned first embodiment, and thus will not be described again.

上述的第一實施例是在第一基材110的第一表面110a上先形成圖案化遮罩120再利用蝕刻形成第一孔H1、第二實施例是在未形成有圖案化遮罩120的狀況下直接利用蝕刻的方式形成第一孔H1;但在本揭露中,第一孔H1的形成方式並不限於前述第一實施例或第二實施例的方式。 In the above-mentioned first embodiment, the patterned mask 120 is first formed on the first surface 110a of the first substrate 110, and then the first hole H1 is formed by etching. In the second embodiment, the patterned mask 120 is not formed. Under the circumstances, the first hole H1 is directly formed by etching; however, in the present disclosure, the formation method of the first hole H1 is not limited to the method of the first embodiment or the second embodiment.

在其他的實施方式中,也可以是利用雷射、噴砂、印刷、切削或雷射雕刻等方式以在第一基材110形成如圖1C所示的第一孔H1。 In other embodiments, laser, sandblasting, printing, cutting or laser engraving can also be used to form the first hole H1 as shown in FIG. 1C in the first substrate 110 .

特別的是,前述第一實施例及第二實施例是以第一基材110是板狀為例說明,但本揭露的孔洞結構H2並不限於只能應用在板材上;換言之,第一基材110的形狀可以依照需求而任意選用,例如,中空的管。 In particular, the foregoing first and second embodiments are described by taking the first base material 110 as a plate as an example, but the hole structure H2 disclosed in the present disclosure is not limited to be applied only on plates; in other words, the first base material 110 The shape of the material 110 can be selected arbitrarily according to requirements, for example, a hollow tube.

圖3A與圖3B為異材質接合結構應用在中空的管時的示意圖。請參考圖3A,當第一基材310的形狀是中空的管時,形成 有孔洞結構H23的第一表面310a可以是管的內表面,且藉由管內雷射雕刻或是管內機械切削的方式在第一表面310a形成孔洞結構H23。 FIG. 3A and FIG. 3B are schematic diagrams of the joint structure of dissimilar materials applied to a hollow tube. Please refer to FIG. 3A, when the shape of the first base material 310 is a hollow tube, forming The first surface 310a with the hole structure H23 may be the inner surface of the tube, and the hole structure H23 is formed on the first surface 310a by laser engraving or mechanical cutting in the tube.

請再參考圖3B,為異材質接合結構的另一種應用的示意圖,在此實施例中孔洞結構H24是形成在中空的管的外表面。要說明的是,在另一種實施例中,也可同時於中空的管的內表面以及外表面均形成有孔洞結構。 Please refer to FIG. 3B again, which is a schematic diagram of another application of the dissimilar material bonding structure. In this embodiment, the hole structure H24 is formed on the outer surface of the hollow tube. It should be noted that, in another embodiment, hole structures may also be formed on both the inner surface and the outer surface of the hollow tube.

爾後,再將第二基材340的材料塗裝在第一表面310a,且第二基材340的材料填入孔洞結構H23中,使得第二基材340緊密地嵌合於第一基材310。 Thereafter, the material of the second base material 340 is coated on the first surface 310a, and the material of the second base material 340 is filled into the hole structure H23, so that the second base material 340 is closely fitted to the first base material 310 .

此外,也可能是將板狀的異材質接合結構200利用後加工的方式捲成管狀。 In addition, it is also possible to roll the plate-shaped dissimilar material joining structure 200 into a tube shape by post-processing.

在另外一種未繪示的實施方式中,也可以是使第一表面為管狀的第一基材的外表面,且在第一表面上噴塗有第二基材的材料。 In another non-illustrated embodiment, the first surface may also be the outer surface of the tubular first substrate, and the material of the second substrate is sprayed on the first surface.

附帶一提,在第一基材110上所形成的第一孔H1的形狀可依照需求而設計。圖4A至圖4H為第一孔H1在第一基材110上的示意圖。如圖4A及圖4B所示,多個第一孔H1的每一個可以大致呈圓形,且圓形具有相同的直徑,且以固定間隔的方式設置。而如圖4C所示,在一種實施方式中,多個第一孔H1的每一個,其圓形的直徑也可以設計為彼此不相同,且多個第一孔H1的位置也可以是隨機設置。如圖4D所示,多個第一孔H1可以是較 為集中地圍於繞第一基材110的邊緣,但多個第一孔H1在第一基材110的中間部分的分布則較為疏散。在又一實施例中,多個第一孔H1可以是在第一基材110的中間部分較為密集地設置而在邊緣處的分布則較為疏散。也就是說,可依照需求而設計多個第一孔H1的形狀以及疏密分布方式。 Incidentally, the shape of the first hole H1 formed on the first substrate 110 can be designed according to requirements. 4A to 4H are schematic views of the first hole H1 on the first substrate 110 . As shown in FIG. 4A and FIG. 4B , each of the plurality of first holes H1 may be substantially circular, and the circles have the same diameter and are arranged at regular intervals. As shown in Figure 4C, in one embodiment, the circular diameters of each of the plurality of first holes H1 can also be designed to be different from each other, and the positions of the plurality of first holes H1 can also be randomly set. . As shown in Figure 4D, a plurality of first holes H1 can be relatively They are concentrated around the edge of the first base material 110 , but the distribution of the plurality of first holes H1 in the middle part of the first base material 110 is relatively sparse. In yet another embodiment, the plurality of first holes H1 may be densely arranged in the middle portion of the first substrate 110 and distributed relatively loosely at the edge. That is to say, the shape and density distribution of the plurality of first holes H1 can be designed according to requirements.

再者,如圖4E所示,多個第一孔H1也可以設計為具有長條狀,且此些具有長條狀的多個第一孔H1沿著同一個方向彼此平行地間隔設置。在一實施例中,如圖4F所示,多個第一孔H1的長度可依照需求而改變、或彼此不相同,且沿著第一孔H1的長度方向可同時設置彼此間隔設置的多個第一孔H1。又或者,如圖4G所示,多個第一孔H1也可以是以彼此交錯的方式來設置。 Furthermore, as shown in FIG. 4E , the plurality of first holes H1 can also be designed to have a strip shape, and the plurality of strip-shaped first holes H1 are arranged at intervals parallel to each other along the same direction. In one embodiment, as shown in FIG. 4F , the lengths of the plurality of first holes H1 can be changed according to requirements, or are different from each other, and a plurality of holes arranged at intervals from each other can be simultaneously provided along the length direction of the first holes H1. First hole H1. Alternatively, as shown in FIG. 4G , a plurality of first holes H1 may also be arranged in a manner of interlacing each other.

此外,如圖4H所示,多個第一孔H1的長度方向並不平行於第一基材110的邊緣,而是與第一基材110的邊緣夾有一個角度。 In addition, as shown in FIG. 4H , the length direction of the plurality of first holes H1 is not parallel to the edge of the first substrate 110 , but forms an angle with the edge of the first substrate 110 .

由上述可知,本揭露的多個第一孔H1的形狀、長度、排列方式及疏密程度等,都可以依照實際需求而改變。 It can be known from the above that the shape, length, arrangement and density of the plurality of first holes H1 in the present disclosure can be changed according to actual needs.

綜上所述,本揭露在第一基材的表面上形成的孔洞結構具有特殊的形狀,其中孔洞結構的中間部分的孔徑小於位在相對兩側的部分的孔徑,因此在將與第一基材材質相異的第二基材的材料填入孔洞結構之後,能夠讓第一基材與第二基材達到良好的嵌合效果,有效防止第二基材自第一基材脫離。 To sum up, the hole structure formed on the surface of the first substrate in the present disclosure has a special shape, wherein the pore diameter of the middle part of the hole structure is smaller than the pore diameter of the parts on the opposite sides. After the material of the second base material with different materials is filled into the pore structure, the first base material and the second base material can achieve a good fitting effect, effectively preventing the second base material from detaching from the first base material.

如此一來,可依照實際需求選用填入孔洞結構的第二基 材的材料,使得本揭露的異材質接合結構能夠應用在各種類相異材質的接合,進而通用於各種領域,因此具備廣泛的應用性。 In this way, the second base for filling the hole structure can be selected according to actual needs. The materials of different materials make the dissimilar material joining structure of the present disclosure applicable to the joining of various kinds of dissimilar materials, and can be generally used in various fields, so it has wide applicability.

110:第一基材110: first substrate

110a:第一表面110a: first surface

110b:第二表面110b: second surface

130:遮蔽層130: masking layer

140:第二基材140: second substrate

200:異材質接合結構200: Dissimilar material joint structure

H2:孔洞結構H2: hole structure

Claims (22)

一種孔洞結構,自一基材的一第一表面以朝向該基材的一第二表面的一深度方向形成在該基材的內部,其中沿著該深度方向,該孔洞結構依序具有一第一孔徑、一第二孔徑及一第三孔徑,該第一孔徑位於該第一表面,而該第二孔徑小於該第一孔徑及該第三孔徑,其中沿著該深度方向,該孔洞結構具有一楔形部及一球部,該第二孔徑為該楔形部及該球部的分界。 A hole structure is formed inside a substrate in a depth direction from a first surface of a substrate toward a second surface of the substrate, wherein along the depth direction, the hole structure has a first A hole, a second hole and a third hole, the first hole is located on the first surface, and the second hole is smaller than the first hole and the third hole, wherein along the depth direction, the hole structure has A wedge portion and a ball portion, the second aperture is the boundary between the wedge portion and the ball portion. 如申請專利範圍第1項所述的孔洞結構,其中該第一孔徑及該第三孔徑朝向該第二孔徑漸縮。 The hole structure as described in claim 1, wherein the first hole diameter and the third hole diameter are tapered toward the second hole diameter. 如申請專利範圍第1項所述的孔洞結構,其中該第一孔徑及該第二孔徑定義出該楔形部,而該第三孔徑為該球部的直徑。 The hole structure described in claim 1, wherein the first aperture and the second aperture define the wedge-shaped portion, and the third aperture is the diameter of the spherical portion. 一種孔洞結構的製作方法,包括:提供一基材;於該基材的一第一表面形成一第一孔;於該基材的該第一表面塗裝上一遮蔽層,該基材的活性優於該遮蔽層的活性,其中該遮蔽層填入該第一孔並沿著該第一孔的輪廓而在該第一孔的表面上形成薄層,該第一表面與該第一孔相連的轉角處的該遮蔽層因為邊緣效應而厚度厚於其他處的該遮蔽層;以及對其上塗裝有該遮蔽層的該基材進行蝕刻,以形成該孔洞結構。 A method for making a hole structure, comprising: providing a base material; forming a first hole on a first surface of the base material; coating a masking layer on the first surface of the base material, and the activity of the base material Activity superior to that of the obscuring layer, wherein the obscuring layer fills the first hole and forms a thin layer on the surface of the first hole along the contour of the first hole, the first surface being connected to the first hole The masking layer at the corner is thicker than the masking layer at other places due to edge effect; and etching the substrate coated with the masking layer to form the hole structure. 如申請專利範圍第4項所述的孔洞結構的製作方法,其中形成該第一孔的方法包括雷射、噴砂、印刷、切削或蝕刻。 The manufacturing method of the hole structure as described in claim 4 of the patent application, wherein the method of forming the first hole includes laser, sandblasting, printing, cutting or etching. 如申請專利範圍第4項所述的孔洞結構的製作方法,其中該第一孔為圖案化的多個孔。 The method for manufacturing a hole structure as described in claim 4 of the patent application, wherein the first hole is a plurality of patterned holes. 如申請專利範圍第4項所述的孔洞結構的製作方法,其中該基材的材料為鐵、銅、鋁、鎂或不鏽鋼,而該遮蔽層的材料可選自為鎳、銅、鉻、鉛、銀、金及高分子材料中的其中一種。 The manufacturing method of the hole structure as described in item 4 of the scope of the patent application, wherein the material of the base material is iron, copper, aluminum, magnesium or stainless steel, and the material of the shielding layer can be selected from nickel, copper, chromium, lead , silver, gold and one of the polymer materials. 如申請專利範圍第4項所述的孔洞結構的製作方法,其中於該基材的該第一表面塗裝上該遮蔽層的方法包括塗刷、轉印、蒸鍍、電鍍或濺鍍。 The manufacturing method of the hole structure as described in claim 4 of the patent application, wherein the method of coating the masking layer on the first surface of the substrate includes painting, transfer printing, vapor deposition, electroplating or sputtering. 如申請專利範圍第4項所述的孔洞結構的製作方法,該基材還具有一第二表面,且該第二表面與該第一表面為該基材的相對兩表面,其中沿著自該第一表面朝向該第二表面的一深度方向,越深入該第一孔,該遮蔽層的厚度漸薄。 According to the manufacturing method of the hole structure described in item 4 of the scope of the patent application, the base material also has a second surface, and the second surface and the first surface are opposite surfaces of the base material, wherein along the The first surface faces a depth direction of the second surface, the deeper the first hole is, the thickness of the shielding layer becomes thinner. 如申請專利範圍第4項所述的孔洞結構的製作方法,更包括在蝕刻製程之後移除剩餘的該遮蔽層。 The manufacturing method of the hole structure as described in item 4 of the scope of the patent application further includes removing the remaining masking layer after the etching process. 一種異材質接合結構,包括:一第一基材,具有一第一表面、一第二表面以及一孔洞結構,該孔洞結構形成在該第一表面及該第二表面之間,且沿著自該第一表面朝向該第二表面的一深度方向,該孔洞結構依序具有一第一孔徑、一第二孔徑及一第三孔徑,該第一孔徑位於該第一表面,而該第二孔徑小於該第一孔徑及該第三孔徑;以及 一第二基材,嵌合於該孔洞結構中,其中沿著該深度方向,該孔洞結構具有一楔形部及一球部,該第二孔徑為該楔形部及該球部的分界。 A joint structure of dissimilar materials, comprising: a first substrate having a first surface, a second surface and a hole structure, the hole structure is formed between the first surface and the second surface, and along the The first surface faces a depth direction of the second surface, the hole structure has a first aperture, a second aperture and a third aperture in sequence, the first aperture is located on the first surface, and the second aperture smaller than the first aperture and the third aperture; and A second base material is embedded in the hole structure, wherein along the depth direction, the hole structure has a wedge portion and a ball portion, and the second aperture is a boundary between the wedge portion and the ball portion. 如申請專利範圍第11項所述的異材質接合結構,其中該第一孔徑及該第三孔徑朝向該第二孔徑漸縮。 The dissimilar material joining structure as described in claim 11, wherein the first aperture and the third aperture are tapered toward the second aperture. 如申請專利範圍第11項所述的異材質接合結構,其中該第一孔徑及該第二孔徑定義出該楔形部,而該第三孔徑為該球部的直徑。 The joint structure of dissimilar materials as described in claim 11, wherein the first aperture and the second aperture define the wedge-shaped portion, and the third aperture is the diameter of the spherical portion. 如申請專利範圍第11項所述的異材質接合結構,其中該第二基材嵌合入該孔洞結構中的部分適形於該孔洞結構。 The dissimilar material joining structure described in claim 11, wherein the part of the second base material embedded in the hole structure conforms to the hole structure. 一種異材質接合結構的製作方法,包括:提供一第一基材;於該第一基材的一第一表面形成一第一孔;於該第一基材的該第一表面塗裝上一遮蔽層,該第一基材的活性優於該遮蔽層的活性,其中該遮蔽層填入該第一孔並沿著該第一孔的輪廓而在該第一孔的表面上形成薄層,而該第一表面與該第一孔相連的轉角處的該遮蔽層因為邊緣效應而厚度厚於其他處的該遮蔽層;對其上塗裝有該遮蔽層的該第一基材進行蝕刻,以形成該孔洞結構;以及於該第一基材的該第一表面上塗裝一第二基材的材料,其中該第二基材的材料填入該孔洞結構中。 A method for fabricating a joint structure of different materials, comprising: providing a first base material; forming a first hole on a first surface of the first base material; coating the first surface of the first base material with a a masking layer, the activity of the first substrate being greater than that of the masking layer, wherein the masking layer fills the first hole and forms a thin layer on the surface of the first hole along the contour of the first hole, And the shielding layer at the corner where the first surface is connected to the first hole is thicker than the shielding layer at other places due to edge effects; the first substrate coated with the shielding layer is etched, forming the hole structure; and coating a second base material on the first surface of the first base material, wherein the second base material fills the hole structure. 如申請專利範圍第15項所述的異材質接合結構的製作方法,其中形成該第一孔的方法包括雷射、噴砂、印刷、切削或蝕刻。 The manufacturing method of the dissimilar material joining structure as described in claim 15 of the patent application, wherein the method of forming the first hole includes laser, sandblasting, printing, cutting or etching. 如申請專利範圍第15項所述的異材質接合結構的製作方法,該第一基材還具有一第二表面,且該第二表面與該第一表面為該第一基材的相對兩表面,其中沿著自該第一表面朝向該第二表面的一深度方向,越深入該第一孔,該遮蔽層的厚度漸薄。 According to the manufacturing method of the dissimilar material joint structure described in claim 15, the first base material also has a second surface, and the second surface and the first surface are opposite surfaces of the first base material , wherein along a depth direction from the first surface toward the second surface, the deeper the first hole is, the thickness of the shielding layer becomes thinner. 如申請專利範圍第15項所述的異材質接合結構的製作方法,其中該第一孔為圖案化的多個孔。 The method for fabricating a dissimilar material joining structure as described in claim 15, wherein the first hole is a plurality of patterned holes. 如申請專利範圍第15項所述的異材質接合結構的製作方法,其中該第一基材的材料為鐵、銅、鋁、鎂或其合金,而該遮蔽層的材料可選自為鎳、銅、鉻、鉛、銀、金及高分子材料中的其中一種。 According to the method for making a joint structure of different materials as described in item 15 of the scope of the patent application, wherein the material of the first base material is iron, copper, aluminum, magnesium or alloys thereof, and the material of the shielding layer can be selected from nickel, One of copper, chromium, lead, silver, gold and polymer materials. 如申請專利範圍第15項所述的異材質接合結構的製作方法,其中於該第一基材的該第一表面塗裝上該遮蔽層的方法包括塗刷、轉印、蒸鍍、電鍍或濺鍍。 The method for fabricating a joint structure of different materials as described in claim 15 of the patent application, wherein the method of coating the masking layer on the first surface of the first substrate includes painting, transfer printing, vapor deposition, electroplating or Sputtering. 如申請專利範圍第15項所述的異材質接合結構的製作方法,更包括在蝕刻製程之後移除剩餘的該遮蔽層。 The manufacturing method of the dissimilar material bonding structure as described in item 15 of the scope of the patent application further includes removing the remaining masking layer after the etching process. 如申請專利範圍第15項所述的異材質接合結構的製作方法,其中該第二基材的材料為高分子材料。 The method for fabricating a dissimilar material joining structure as described in claim 15, wherein the material of the second base material is a polymer material.
TW108142930A 2019-11-26 2019-11-26 Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof TWI790412B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW108142930A TWI790412B (en) 2019-11-26 2019-11-26 Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108142930A TWI790412B (en) 2019-11-26 2019-11-26 Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW202120328A TW202120328A (en) 2021-06-01
TWI790412B true TWI790412B (en) 2023-01-21

Family

ID=77516486

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108142930A TWI790412B (en) 2019-11-26 2019-11-26 Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI790412B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114321693B (en) * 2021-12-29 2024-03-12 富联裕展科技(深圳)有限公司 Metal product and preparation method thereof, metal complex and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201429333A (en) * 2013-01-07 2014-07-16 Ecocera Optronics Co Ltd Circuit board and method for manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201429333A (en) * 2013-01-07 2014-07-16 Ecocera Optronics Co Ltd Circuit board and method for manufacturing the same

Also Published As

Publication number Publication date
TW202120328A (en) 2021-06-01

Similar Documents

Publication Publication Date Title
US5509472A (en) Heat-resisting plate having a cooling structure and method of manufacturing it
US6736204B2 (en) Heat transfer surface with a microstructure of projections galvanized onto it
US7696102B2 (en) Methods for fabrication of three-dimensional structures
TWI790412B (en) Hole structure and manufacturing method thereof, and different material joint structure and manufacturing method thereof
CN107709613B (en) Composite pipe and method for manufacturing composite pipe
US20150197858A1 (en) Fabrication of three-dimensional heat transfer enhancing features on a substrate
EP1462230B1 (en) Die for molding honeycomb structure and manufacturing method thereof
JP3850277B2 (en) Method for manufacturing plasma resistant member
US20200199733A1 (en) Deposition mask
EP0416824B1 (en) Ceramics coated cemented carbide tool with high fracture resistance
US8667673B2 (en) Method for fabricating a laminated structure
JP2003239094A (en) Fine-electroforming die, and method for manufacturing the same
US11229090B2 (en) Multilayered nanowire arrays with lateral interposers
KR20110088971A (en) Method of fabricating a fine-pitch printed circuit board
US8232205B2 (en) Methods of manufacturing a honeycomb extrusion die
JP4231978B2 (en) Gasket for fuel cell
JP5142937B2 (en) Rolling roll and screen printing mesh
TWI573209B (en) Conductive ball fixing mask and manufacturing method thereof
JPH0468022B2 (en)
JPS61129257A (en) Manufacture of continuous casting mold
JP2005314787A (en) Method for producing metal mask
JP6015874B2 (en) Vapor deposition mask manufacturing method and vapor deposition mask
TWI617375B (en) Continuous casting mold
CN104591079B (en) A kind of processing method of micron of pipeline
TWI722889B (en) Manufacturing method of bake resistant roller