TWI789549B - Memory chip, memory module and method for pseudo-accessing memory bbank thereof - Google Patents
Memory chip, memory module and method for pseudo-accessing memory bbank thereof Download PDFInfo
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Abstract
Description
本發明係有關一種記憶體晶片,尤指一種可假性存取其記憶庫的記憶體晶片。 The invention relates to a memory chip, in particular to a memory chip capable of falsely accessing its memory bank.
隨機存取記憶體(RAM)是一種計算機資料儲存形式,用於儲存當前使用的資料和機器代碼。隨機存取記憶體設備可以不管該記憶體內的資料的物理位置如何而允許在幾乎相同的時間內讀取或寫入資料。 Random Access Memory (RAM) is a form of computer data storage used to store data and machine code currently in use. Random access memory devices allow data to be read or written in approximately the same amount of time regardless of the physical location of the data within the memory.
RAM包含多工和解多工電路,用於將資料連線到位址記憶體以讀取或寫入條目。通常,同一個位址可以存取超過一個位元的儲存區。 RAM contains multiplexing and demultiplexing circuits for wiring data to address memory to read or write entries. Usually, the same address can access more than one bit of storage.
為了有實際用途,記憶體單元必須是可讀取並且可寫入的。在RAM裝置中,多工和解多工電路用於選擇記憶體單元。通常,RAM裝置具有一組位址線A0......An,並且對於可以應用於這些位址線的每一種位元組合,可以啟動一組對應的記憶體單元。由於這種定址方式,RAM裝置幾乎總是具有二次冪的記憶體容量。 To be useful, memory cells must be both readable and writable. In RAM devices, multiplexing and demultiplexing circuits are used to select memory cells. Typically, a RAM device has a set of address lines A0...An, and for each bit combination that can be applied to these address lines, a corresponding set of memory cells can be enabled. Because of this addressing, RAM devices almost always have a power-of-two memory capacity.
許多RAM系統具有由記憶體單元,記憶庫,記憶列,記憶模組以及記憶體通道所組成的一層次結構。請參考圖1,其示出了RAM系統的層次結構的一方塊圖。由一中央處理器(CPU)1耦接到一個或多個記憶體通道2a~2b。該記憶體通道2a~2b中的每一個記憶體通道可以包括多個記憶體模組
3。每個記憶體模組3可以具有一個或兩個記憶體列4,其包括幾個記憶體晶片5。每個記憶體晶片5包括幾個記憶庫6。記憶庫6由排列成陣列的許多記憶體單元7形成。
Many RAM systems have a hierarchy of memory cells, banks, ranks, modules, and channels. Please refer to FIG. 1 , which shows a block diagram of a hierarchical structure of a RAM system. A central processing unit (CPU) 1 is coupled to one or
記憶體設備製造商習慣於保證其產品具有一定使用年限甚至是終身的保固。保修年數通常根據以下概念來估計:該記憶體裝置可以在該記憶體裝置的所有記憶庫中均勻分配可進行的總存取操作次數。在某些過度簡化的實施態樣中,某應用程式可能對記憶體的要求非常低(比所配備的系統搭載的記憶體容量小得多)但是卻需要非常頻繁的存取記憶體,這類的應用程式可能相較其他記憶庫來說會更頻繁地存取某些特定的記憶庫。最終,這將導致被重度存取的記憶庫的提早衰壞。 Manufacturers of memory devices are used to guaranteeing their products with a limited number of years or even a lifetime warranty. Warranty years are usually estimated based on the concept that the total number of access operations that can be performed by the memory device can be evenly distributed among all banks of the memory device. In some oversimplified implementations, an application may have very low memory requirements (much less than the system is equipped with) but require very frequent memory accesses, such applications may access certain memory banks more frequently than others. Ultimately, this will lead to premature decay of heavily accessed memory banks.
因此本發明的目的在於提供一種記憶體晶片其可假性存取其記憶庫,以預防該等記憶庫的提早衰壞。 Therefore, the object of the present invention is to provide a memory chip which can falsely access its memory bank to prevent premature failure of the memory bank.
為了達成上述目的,根據本發明的一層面,係提出一記憶體晶片。該記憶體晶片包括:複數個記憶庫;複數個位址接腳,係用來接收分別對應於該等記憶庫的複數個位址訊號;以及一虛擬位址決定電路,其具有複數個輸入接腳和複數個輸出接腳,其中該等輸入接腳分別耦接到該等位址接腳,該等輸出接腳耦接到該等記憶庫,當該記憶體晶片上電時,該虛擬位址決定電路為該等記憶庫產生一虛擬位址表,其中該虛擬位址表具有分別對應於該等記憶庫的複數個虛擬位址,並且該等等記憶庫中的每一個記憶庫被設置成根據相應的虛擬位址來被存取。 In order to achieve the above object, according to one aspect of the present invention, a memory chip is provided. The memory chip includes: a plurality of memory banks; a plurality of address pins, which are used to receive a plurality of address signals respectively corresponding to the memory banks; and a virtual address determination circuit, which has a plurality of input interfaces Pins and a plurality of output pins, wherein the input pins are respectively coupled to the address pins, the output pins are coupled to the memory banks, when the memory chip is powered on, the dummy bit The address determination circuit generates a virtual address table for the memory banks, wherein the virtual address table has a plurality of virtual addresses respectively corresponding to the memory banks, and each of the memory banks is set are accessed according to the corresponding virtual address.
為了達成上述目的,根據本發明的另一層面,係提出一記憶體模組。該記憶體模組包括:一印刷電路版;一控制電路,設置於該印刷電路版上;以及複數個記憶體晶片,設置於該印刷電路版且耦接至該控制電路,其中該等記憶體晶片中的每一個記憶體晶片包含:複數個記憶庫;複數個位址接腳,係用來接收分別對應於該等記憶庫的複數個位址訊號;以及一虛擬位址,決定電路其具有複數個輸入接腳和複數個輸出接腳,其中該等輸入接腳分別耦接到該等位址接腳,該等輸出接腳耦接到該等記憶庫,當該記憶體晶片上電時,該虛擬位址決定電路為該等記憶庫產生一虛擬位址表,其中該虛擬位址表具有分別對應於該等記憶庫的複數個虛擬位址,並且該等等記憶庫中的每一個記憶庫被設置成根據相應的虛擬位址來被存取。 In order to achieve the above object, according to another aspect of the present invention, a memory module is proposed. The memory module includes: a printed circuit board; a control circuit disposed on the printed circuit board; and a plurality of memory chips disposed on the printed circuit board and coupled to the control circuit, wherein the memories Each memory chip in the chip includes: a plurality of memory banks; a plurality of address pins, which are used to receive a plurality of address signals respectively corresponding to the memory banks; and a virtual address, which determines the circuit which has A plurality of input pins and a plurality of output pins, wherein the input pins are respectively coupled to the address pins, and the output pins are coupled to the memory banks, when the memory chip is powered on , the virtual address determining circuit generates a virtual address table for the memory banks, wherein the virtual address table has a plurality of virtual addresses respectively corresponding to the memory banks, and each of the memory banks Banks are configured to be accessed according to corresponding virtual addresses.
為了達成上述目的,根據本發明的又一層面,係提出一種假性存取一記憶體晶片的複數個記憶庫的方法。該方法包含:當該記憶體晶片上電時為該等記憶庫產生一虛擬位址表,其中該虛擬位址表係儲存於一記憶體中,且該等記憶庫中的每一個記憶庫係對應於該虛擬位址表中的一虛擬位址;接收具有一位址訊號的一控制訊號,該位址訊號係指示該控制訊號即將被發送到的目的記憶庫;根據指示該目的記憶庫的該位址訊號以及該虛擬位址表來決定一虛擬位址;以及將該控制訊號重新導向至該虛擬位址所指示的一偽記憶庫。 In order to achieve the above object, according to another aspect of the present invention, a method for falsely accessing multiple memory banks of a memory chip is proposed. The method includes: generating a virtual address table for the memory banks when the memory chip is powered on, wherein the virtual address table is stored in a memory, and each of the memory banks is Corresponding to a virtual address in the virtual address table; receiving a control signal having an address signal indicating the destination memory bank to which the control signal is to be sent; according to the destination memory bank indicating the destination The address signal and the virtual address table determine a virtual address; and redirect the control signal to a pseudo memory bank indicated by the virtual address.
透過這些設置,該記憶體晶片,該記憶體模組以及用來假性存取一記憶體晶片的該等記憶庫的方法可以在每次該記憶體晶片上電時改變其記憶庫的虛擬位址表。以這種方式,無論應用的設計或實施態樣如何,存取每個記憶庫的頻率將可以平均分佈於所有的記憶庫中。換句話說,本發明可以防止因重度存取而導致記憶庫的提早衰壞。 Through these configurations, the memory chip, the memory module and the method for falsely accessing the memory banks of a memory chip can change the virtual bits of the memory banks every time the memory chip is powered on address table. In this way, the frequency of accessing each bank can be evenly distributed among all banks, regardless of the design or implementation of the application. In other words, the present invention can prevent premature decay of the memory bank caused by heavy access.
1:CPU 1: CPU
2a、2b:記憶體通道 2a, 2b: memory channel
3:記憶體模組 3: Memory module
4:記憶體列 4: Memory column
5:記憶體晶片 5: Memory chip
6:記憶庫 6: Memory bank
7:記憶體單元 7: Memory unit
10:記憶體晶片 10: Memory chip
11、12、13、14:記憶庫 11, 12, 13, 14: memory bank
15:虛擬位址決定電路 15: Virtual address decision circuit
26、36:控制器 26, 36: Controller
20、30:記憶體晶片 20, 30: memory chip
40、50、60:記憶體模組 40, 50, 60: memory modules
41:印刷電路版 41: Printed circuit board
42:控制電路 42: Control circuit
P1、P2:接腳 P1, P2: Pins
S11、S12、S13、S14、S_C:訊號 S11, S12, S13, S14, S_C: signal
1100:方法 1100: method
1101、1102、1104、1106:步驟 1101, 1102, 1104, 1106: steps
透過參考以下較佳實施例的詳細描述和圖式,可以最好地理解本發明為實現上述或其他目的所採用的結構與技術手段,其中圖1 是傳統RAM系統層次結構的一方塊圖。 The structure and technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the detailed description and drawings of the following preferred embodiments, wherein FIG. 1 is a block diagram of a traditional RAM system hierarchy.
圖2 是根據本發明實施例的一記憶體晶片的一方塊圖。 FIG. 2 is a block diagram of a memory chip according to an embodiment of the present invention.
圖3 是根據本發明實施例的一記憶體晶片的位址表。 FIG. 3 is an address table of a memory chip according to an embodiment of the present invention.
圖4 是根據本發明的不同實施例的一記憶體晶片的虛擬位址表。 FIG. 4 is a virtual address table of a memory chip according to different embodiments of the present invention.
圖5 是根據本發明的不同實施例的一記憶體晶片的虛擬位址表。 FIG. 5 is a virtual address table of a memory chip according to different embodiments of the present invention.
圖6 是根據本發明另一實施例的一記憶體晶片的一方塊圖和示例性虛擬位址表。 FIG. 6 is a block diagram and exemplary virtual address table of a memory chip according to another embodiment of the present invention.
圖7 是根據本發明的又一實施例的一記憶體晶片的一方塊圖和示例性虛擬位址表。 FIG. 7 is a block diagram and exemplary virtual address table of a memory chip according to yet another embodiment of the present invention.
圖8 是根據本發明的不同實施例的記憶體模組。 FIG. 8 is a memory module according to different embodiments of the present invention.
圖9 是根據本發明的不同實施例的記憶體模組。 FIG. 9 is a memory module according to different embodiments of the present invention.
圖10 是根據本發明的不同實施例的記憶體模組。 FIG. 10 is a memory module according to different embodiments of the present invention.
圖11 是根據本發明的示例性實施例的假性存取一記憶體晶片的記憶庫的一種方法的流程圖。 FIG. 11 is a flowchart of a method for falsely accessing a bank of a memory chip according to an exemplary embodiment of the present invention.
現在將透過本發明的一些較佳實施例並參考圖式來描述本發明。 The invention will now be described by way of some of its preferred embodiments and with reference to the accompanying drawings.
請參考圖2,其示出了根據本發明實施例的一記憶體晶片的一方塊圖。在圖2中,該記憶體晶片10包括複數個記憶庫11~14,複數個位址接腳P1~P2以及一虛擬位址決定電路15。
Please refer to FIG. 2 , which shows a block diagram of a memory chip according to an embodiment of the present invention. In FIG. 2 , the
該等位址接腳P1~P2係用來接收分別對應於該等記憶庫11~14的該等位址訊號S11~S14。也就是說,該等位址訊號S11~S14將構成該等位址接腳P1~P2的電壓位準的4種可能結果。請參考圖3,圖3是根據本發明實施例的該記憶體晶片10的位址表。在圖3中,該位址訊號S11使得位置接腳P1和P2兩者的電壓位準相對高(用數字“1”表示),該位址訊號S12使得位址接腳P1的電壓位準相對高而位址接腳P2的電壓位準相對低(用數字“0”表示),該位址訊號S13使位址接腳P1的電壓位準相對低而位址接腳P2的電壓位準相對高,該位址訊號S14使得位置接腳P1和P2兩者的電壓位準相對低。在該實施例中,如果接收到一位位址訊號並且造成位址接腳P1~P2兩者的電壓位準皆相對高,則代表收到該位址訊號S11。接著該記憶體晶片10將會決定該記憶庫11是用於即將到來的操作的一目標記憶庫。在前面的實施例中,將位置接腳P1視為行位址並且將位址接腳P2視為列位接接腳也是有幫助的。換句話說,該等位址接腳P1被設置為接收用來決定該目標記憶庫是位於該等記憶庫11~14的陣列中哪一行上的電壓位準,並且位址接腳P2被設置為接收用來決定該目標記憶庫是位於該等記憶庫11~14的陣列中哪一列上的電壓位準。請注意,本實施例中的位址接腳的數量僅用於說明目的,並不意味著是對本發明的限制。在不脫離本發明的精神的情況下,本領域技術人員可以根據應用的實際設計和要求進行修改和變更。
The address pins P1-P2 are used to receive the address signals S11-S14 respectively corresponding to the memory banks 11-14. That is to say, the address signals S11˜S14 will constitute 4 possible results of the voltage levels of the address pins P1˜P2. Please refer to FIG. 3 , which is an address table of the
請再次參考圖2,在圖2中,該虛擬位址決定電路15具有複數個輸入接腳以及複數個輸出接腳。該虛擬位址決定電路15的該等輸入接腳分別耦
接到該等位址接腳P1~P2。該虛擬位址確定電路15的該等輸出接腳耦接到該等記憶庫11~14。在另一種設計中,該虛擬位址確定電路15的輸出接腳可以透過一行位址控制器和一列位址控制器耦接到該等記憶庫11~14。以這種方式,耦接到該行位址控制器的輸出接腳將向該行位址控制器發送一行選擇信號,以決定該目標記憶庫位於該等記憶庫11~14的陣列的哪一行上,並且耦接到該列位址控制器的輸出接腳將向該列位址控制器發送一列選擇信號,以決定該目標記憶庫是位於該等記憶庫11~14的陣列的哪一列上。在上述任一設計中,從該虛擬位址決定電路15的輸出接口輸出的訊號將決定將要執行操作的記憶庫的位址。
Please refer to FIG. 2 again. In FIG. 2 , the virtual
此外,每當該記憶體晶片10上電時,該虛擬位址決定電路15將為該等記憶庫11~14產生一個虛擬位址表。然後可以將該虛擬位址表儲存在一寄存器中並在該寄存器中查找該虛擬位址表。例如,請同時參考圖3、圖4和圖5。圖4和5示出了根據本發明的不同實施例的記憶體晶片10的虛擬位址表。在圖4的虛擬位址表中,產生該虛擬位址表,使得該等記憶庫11~14對應於該等位址訊號S11~S14,且該等位址訊號S11~S14對於圖3的位址表來說是該等記憶庫11~14中透過移位而表示的不同列位址。在圖4中,該位址訊號S11現在對應於記憶庫12,該位址訊號S12現在對應於記憶庫13,該位址訊號S13現在對應於記憶庫14,該位址訊號S14現在對應於記憶庫11。準確地說,圖4中該等記憶庫11~14的相應位置是圖3中該等記憶庫11~14向下“循環移位”一步的對應位置。換句話說,在圖4的實施例中,記憶庫12只能透過該位址訊號S13來存取。當開發者意圖存取記憶庫13時,他將改為“假性存取”記憶庫12。在記憶庫13被嚴重過度存取的應用程序中,由該虛擬位址產生的上述虛擬位址表決定電路15將秘密地將記憶庫13的一些操作負擔轉移到記憶庫12上而無需任何進一步的配置,使得這種做法可以防止記憶庫13提前衰壞。每當該記憶體晶片10上電時,該虛
擬位址決定電路15會產生一個新的虛擬位址表。這將使原本應該會被重度存取的記憶庫13的負載分配給另一個記憶庫。
In addition, whenever the
在圖5中,該虛擬位址表由該虛擬位址決定電路15隨機產生。例如,透過先複製位址表然後用該等記憶庫11~14的隨機排序的列位址替換指示所複製的位址表的該等記憶庫11~14的列位址來產生該虛擬位址表。從統計上來說,如果在虛擬位址的迭代增長時隨機產生虛擬位址,則該記憶體晶片10的可靠性將會增加。
In FIG. 5 , the virtual address table is randomly generated by the virtual
請參考圖6,其示出了一記憶體晶片的一方塊圖和根據本發明另一實施例的示例性虛擬位址表。請注意,記憶體晶片20與該記憶體晶片10共用一些元件。如果在記憶體晶片20中的元件與在記憶體晶片10中的元件基本上相同時,則將用相同的符號來表示,以避免混淆。在圖6中,該記憶體晶片20還包括一控制器26。該控制器26耦接到該虛擬位址決定電路15,並且用來發出一個控制訊號S_C,其具有指示該控制訊號S_C即將被發送到的目的記憶庫的一位址訊號。例如,該控制器26即將對該記憶庫11寫入數據。該控制器26發出指示寫操作的控制訊號S_C和表示目標記憶庫是該記憶庫11的該位址訊號S11。在該實施例中,該虛擬位址決定電路15接著根據該位置訊號S11和圖6的虛擬位址表來決定該記憶庫11的虛擬位址,亦即該記憶庫13。該虛擬位址決定電路15然後將該控制訊號S_C重新導向到該記憶庫13。
Please refer to FIG. 6 , which shows a block diagram of a memory chip and an exemplary virtual address table according to another embodiment of the present invention. Please note that the
請參考圖7,其示出了一記憶體晶片的一方塊圖和根據本發明的又一實施例的示例性虛擬位址表。請注意,一記憶體晶片30與該記憶體晶片10和該記憶體晶片20共用一些元件。如果該記憶體晶片30中的元件與該記憶體晶片10和該記憶體晶片20中的元件基本上相同時,那麼用相同的符號來表示,以避免混淆。在圖7中,該記憶體晶片30還包括一控制器36。該控制器36耦接到該虛擬位址決定電路15和該等記憶庫11~14。該控制器36係用來發出一控制訊
號S_C,其具有一位址訊號,該位址訊號係指示了該控制訊號S_C即將被發送到的目的記憶庫。在該實施例中,指示目的記憶庫的該位址信號被發送到該虛擬位址決定電路15。該虛擬位址決定電路15根據接收的該位址訊號和該虛擬位址表來決定一虛擬位址,並將該虛擬位址對應的該位址訊號送回該控制器36。該控制器36然後將該控制訊號S_C重新導向到由該虛擬位址指示的偽記憶庫。例如,該控制器26即將對該記憶庫11寫入數據。該控制器36發出指示寫入操作的控制訊號S_C和指示目的記憶庫是該記憶庫11的該位址訊號S11。在該實施例中,該虛擬位址決定電路15然後根據該位置訊號S11和圖7的虛擬位址表,來決定記憶庫11的虛擬位址,亦即記憶庫14。該虛擬位址決定電路15接著將該位址訊號S14送回該控制器36。該控制器36然後將該控制訊號S_C重新導向到該記憶庫14。
Please refer to FIG. 7 , which shows a block diagram of a memory chip and an exemplary virtual address table according to another embodiment of the present invention. Please note that a
上述記憶體晶片10,20和30可以進一步結合到一記憶體模組中。請參考圖8,其示出了根據本發明實施例的一記憶體模組。在圖8中,該記憶體模組40包括一印刷電路版41、一控制電路42和複數個記憶體晶片10。該控制電路42設置在該印刷電路版41上並且用於選擇一目標記憶體晶片10。該等記憶體晶片10設置在該印刷電路版41上並與該控制電路42連接。該等記憶體晶片10的結構和操作可參考上述段落。為簡潔起見,這裡將省略詳細描述。
The
請參考圖9,其示出了根據本發明實施例的一記憶體模組。請注意,該記憶體模組50與該記憶體模組40共享一些組件。如果記憶體模組40中的組件與記憶體模組50中的組件基本上相同,則將用相同的符號來表示,以避免混淆。在圖9中,該記憶體模組50包括一印刷電路版41、一控制電路42和複數個記憶體晶片20。該等記憶體晶片20的結構和操作可參考上述段落。為簡潔起見,這裡將省略詳細描述。
Please refer to FIG. 9 , which shows a memory module according to an embodiment of the present invention. Please note that the memory module 50 shares some components with the
請參考圖10,其示出了根據本發明實施例的一記憶體模組。請注意,該記憶體模組60與該記憶體模組40和記憶體模組50共用一些組件。如果該記憶體模組60中的組件與記憶體模組40和記憶體模組50中的組件基本上相同,則將使用相同的符號來表示,以避免混淆。在圖10中,該記憶體模組60包括一印刷電路版41、一控制電路42和複數個記憶體晶片30。該等記憶體晶片30的結構和操作可參考上述段落。為簡潔起見,這裡將省略詳細描述。
Please refer to FIG. 10 , which shows a memory module according to an embodiment of the present invention. Please note that the
該虛擬位址決定電路15也可以用一測試模式使能信號來被禁能。當要測試該記憶體晶片10的可靠性時,測試者在沒有假性存取的情況下能夠測試實際目標記憶庫是至關重要的。使用測試模式使能信號來禁能該虛擬位址決定電路15將提供記憶體晶片10,20或30的應用的靈活性。
The virtual
請參考圖11,圖11是根據本發明示例性實施例的假性存取一記憶體晶片的記憶庫的一種方法的流程圖。如果結果基本上相同,則不需要以圖11中所示的確切順序執行步驟。該示例性方法可以由圖2中所示的記憶體晶片10,圖6中所示的該記憶體晶片20,圖7中所示的該記憶體晶片30,圖8中的記憶體模組40,圖9中的模組50和圖10中的該記憶體模組60來實施。該方法的步驟可以總結如下。
Please refer to FIG. 11 , which is a flow chart of a method for falsely accessing a bank of a memory chip according to an exemplary embodiment of the present invention. If the results are essentially the same, the steps do not need to be performed in the exact order shown in Figure 11. The exemplary method can be composed of the
步驟1101:當該記憶體晶片上電時,為該記憶體產生一個虛擬位址表。 Step 1101: Generate a virtual address table for the memory when the memory chip is powered on.
步驟1102:接收一控制訊號,其中具有一位址訊號其指示該控制訊號即將被發送到的目的記憶庫。 Step 1102: Receive a control signal with an address signal indicating the destination bank to which the control signal is to be sent.
步驟1104:根據該位址訊號來決定一虛擬位址其指示目的記憶庫以及該虛擬位址表。 Step 1104: Determine a virtual address indicating the destination memory bank and the virtual address table according to the address signal.
步驟1106:將該控制訊號重新導定到該虛擬位址所指示的偽記憶庫。 Step 1106: Redirect the control signal to the pseudo memory bank indicated by the virtual address.
在該方法1100中,該虛擬位址表儲存在一記憶體中,並且該等記憶庫中的每一個記憶庫係對應於該虛擬位址表中的一虛擬位址。步驟1101可以由記憶體晶片10,20或30的虛擬位址決定電路15來執行。步驟1102可以由該虛擬位址決定電路15執行。該位址訊號由該控制器26發出,或者步驟1104可以由記憶體晶片10,20或30的虛擬位址決定電路15執行。步驟1106可以由該虛擬位址決定電路15或該控制器26或36執行。
In the
已上用本發明的一些較佳實施例描述了本發明,並且應該理解的是較佳實施例僅是說明性的,並不旨在以任何方式限制本發明,並且可以在不脫離本發明的實施例的情況下進行許多改變和修改。本發明的範圍和精神旨在僅由所附申請專利範圍限制。 The invention has been described above in terms of some preferred embodiments of the invention, and it should be understood that the preferred embodiments are illustrative only and are not intended to limit the invention in any way, and may be modified without departing from the invention. Many changes and modifications are made in the case of the embodiment. It is intended that the scope and spirit of the invention be limited only by the appended claims.
10:記憶體晶片 10: Memory chip
11、12、13、14:記憶庫 11, 12, 13, 14: memory bank
15:虛擬位址決定電路 15: Virtual address decision circuit
P1、P2:接腳 P1, P2: Pins
S11、S12、S13、S14:訊號 S11, S12, S13, S14: signal
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101980177A (en) * | 2010-10-21 | 2011-02-23 | 北京握奇数据系统有限公司 | Method and device for operating Flash |
CN104298608A (en) * | 2013-07-17 | 2015-01-21 | 英飞凌科技股份有限公司 | Memory access by using address bit permutation |
TW201828066A (en) * | 2016-11-28 | 2018-08-01 | 慧榮科技股份有限公司 | Method for data management |
US20180307617A1 (en) * | 2017-04-20 | 2018-10-25 | Oracle International Corporation | Permuted Memory Access Mapping |
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---|---|---|---|---|
CN101980177A (en) * | 2010-10-21 | 2011-02-23 | 北京握奇数据系统有限公司 | Method and device for operating Flash |
CN104298608A (en) * | 2013-07-17 | 2015-01-21 | 英飞凌科技股份有限公司 | Memory access by using address bit permutation |
TW201828066A (en) * | 2016-11-28 | 2018-08-01 | 慧榮科技股份有限公司 | Method for data management |
US20180307617A1 (en) * | 2017-04-20 | 2018-10-25 | Oracle International Corporation | Permuted Memory Access Mapping |
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