TWI789175B - Maintenance method of plating equipment - Google Patents

Maintenance method of plating equipment Download PDF

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TWI789175B
TWI789175B TW110148325A TW110148325A TWI789175B TW I789175 B TWI789175 B TW I789175B TW 110148325 A TW110148325 A TW 110148325A TW 110148325 A TW110148325 A TW 110148325A TW I789175 B TWI789175 B TW I789175B
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tank
catholyte
anolyte
aforementioned
plating
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TW202325903A (en
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富田正輝
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日商荏原製作所股份有限公司
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Abstract

本發明提供一種可抑制配置於鍍覆槽內部之膜變形的技術。鍍覆裝置之維護方法包含:將陽極室之陽極液返回陽極液槽後,使陽極液在陽極液槽與陽極室之間循環(步驟S10e);及將陰極室之陰極液返回陰極液槽後,於陽極液開始在陽極液槽與陽極室之間循環後,使陰極液在陰極液槽與陰極室之間循環(步驟S10f)。The present invention provides a technique capable of suppressing deformation of a film arranged inside a plating tank. The maintenance method of the plating device includes: after returning the anolyte in the anode chamber to the anolyte tank, circulating the anolyte between the anolyte tank and the anode chamber (step S10e); and returning the catholyte in the cathode chamber to the catholyte tank , after the anolyte starts to circulate between the anolyte tank and the anode compartment, the catholyte is circulated between the catholyte tank and the cathode compartment (step S10f).

Description

鍍覆裝置之維護方法Maintenance method of plating equipment

本發明係關於一種鍍覆裝置之維護方法。The invention relates to a method for maintaining a coating device.

過去,對基板實施鍍覆處理之鍍覆裝置習知有所謂杯式的鍍覆裝置(例如,參照專利文獻1、專利文獻2)。此種鍍覆裝置具有鍍覆槽。該鍍覆槽之內部藉由膜而劃分成比膜下方之陽極室與比膜上方之陰極室。陽極室中配置陽極,陰極室中配置作為陰極之基板。此外,在基板上形成鍍覆皮膜之鍍覆處理時,係使貯存於陽極液槽之陽極液(鍍覆液)在陽極液槽與陽極室之間循環,並使貯存於陰極液槽之陰極液(鍍覆液)在陰極液槽與陰極室之間循環。 [先前技術文獻] [專利文獻] Conventionally, a so-called cup-type plating apparatus has been known as a plating apparatus for performing a plating process on a substrate (for example, refer to Patent Document 1 and Patent Document 2). Such a coating device has a coating tank. The inside of the coating tank is divided into an anode chamber below the membrane and a cathode chamber above the membrane by the membrane. An anode is arranged in the anode chamber, and a substrate serving as a cathode is arranged in the cathode chamber. In addition, during the plating process of forming a plated film on the substrate, the anolyte (plating solution) stored in the anolyte tank is circulated between the anolyte tank and the anode chamber, and the cathode stored in the catholyte tank is The liquid (plating solution) circulates between the catholyte tank and the cathode chamber. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2008-19496號公報 [專利文獻2]美國專利第6821407號說明書 [Patent Document 1] Japanese Patent Laid-Open No. 2008-19496 [Patent Document 2] Specification of US Patent No. 6821407

(發明所欲解決之問題)(Problem to be solved by the invention)

而上述之杯式的鍍覆裝置中,例如在尚未對基板執行鍍覆處理時,會進行鍍覆裝置的維護。具體而言,在該鍍覆裝置之維護中,例如係將殘留於鍍覆槽之陽極室的陽極液返回陽極液槽,並使陽極液在陽極液槽與陽極室之間循環,或是將殘留於鍍覆槽之陰極室的陰極液返回陰極液槽,並使陰極液在陰極液槽與陰極室之間循環。但是,此種鍍覆裝置之維護,從抑制配置於鍍覆槽內部之膜的變形觀點而言尚有改善的餘地。In the above-mentioned cup-type plating device, for example, when the substrate has not been plated, the maintenance of the plating device will be performed. Specifically, in the maintenance of the plating device, for example, the anolyte remaining in the anode chamber of the coating tank is returned to the anolyte tank, and the anolyte is circulated between the anolyte tank and the anode chamber, or the The catholyte remaining in the cathode chamber of the coating tank is returned to the catholyte tank, and the catholyte is circulated between the catholyte tank and the cathode chamber. However, there is still room for improvement in the maintenance of such a coating apparatus from the viewpoint of suppressing deformation of the film disposed inside the coating tank.

本發明係鑑於上述情形者,目的之一為提供一種可抑制配置於鍍覆槽內部之膜的變形之技術。 (解決問題之手段) (樣態1) One object of the present invention is to provide a technology capable of suppressing deformation of a film arranged inside a plating tank in view of the above circumstances. (a means of solving a problem) (pattern 1)

為了達成上述目的,本發明一個樣態的鍍覆裝置之維護方法包含:將殘留於在鍍覆槽內部劃分成比膜下方之陽極室的陽極液返回用於貯存陽極液之陽極液槽;將殘留於在前述鍍覆槽內部劃分成比前述膜上方之陰極室的陰極液返回用於貯存陰極液之陰極液槽;將殘留於前述陽極室之陽極液返回前述陽極液槽後,使陽極液在前述陽極液槽與前述陽極室之間循環;及將殘留於前述陰極室之陰極液返回前述陰極液槽後,並在陽極液開始在前述陽極液槽與前述陽極室之間循環後,使陰極液在前述陰極液槽與前述陰極室之間循環。In order to achieve the above object, the maintenance method of a plating device of the present invention includes: returning the anolyte remaining in the anolyte compartment divided into the anode chamber below the membrane in the coating tank to the anolyte tank for storing the anolyte; The catholyte remaining in the catholyte that is divided into the catholyte above the membrane above the aforementioned coating tank is returned to the catholyte tank for storing the catholyte; Circulating between the aforementioned anolyte tank and the aforementioned anode compartment; and after returning the catholyte remaining in the aforementioned cathode compartment to the aforementioned catholyte tank, and after the anolyte starts to circulate between the aforementioned anolyte tank and the aforementioned anode compartment, make The catholyte circulates between the aforementioned catholyte tank and the aforementioned cathode chamber.

採用該樣態時,由於使陽極液在陽極液槽與陽極室之間循環,係比使陰極液在陰極液槽與陰極室之間循環先開始,因此可使陽極室之壓力上升比陰極室的壓力上升先開始。藉此,例如,與比陽極液之循環先進行陰極液的循環,陰極室之壓力上升比陽極室的壓力上升先開始時比較,可抑制配置於鍍覆槽內部之膜藉由陰極室之壓力而向下方變形。 (樣態2) When this mode is adopted, since the circulation of the anolyte between the anolyte tank and the anode chamber starts before the circulation of the catholyte between the catholyte tank and the cathode chamber, the pressure of the anode chamber can be increased more than that of the cathode chamber. The pressure rise starts first. Thereby, for example, compared with the case where the circulation of the catholyte is performed earlier than the circulation of the anolyte, and the pressure rise of the cathode chamber starts earlier than the pressure rise of the anode chamber, it is possible to suppress the pressure of the membrane disposed inside the plating tank from passing through the cathode chamber. and deformed downward. (state 2)

上述樣態1亦可進一步包含當貯存於前述陽極液槽之陽極液的液面水平未達預設之指定水平時,以貯存於前述陽極液槽之陽極液的液面水平超過該指定水平之方式,將從陽極液供給裝置所供給之陽極液補充至前述陽極液槽。 (樣態3) The above state 1 may further include when the liquid level of the anolyte stored in the anolyte tank does not reach the preset specified level, the liquid level of the anolyte stored in the anolyte tank exceeds the specified level. In this way, the anolyte supplied from the anolyte supply device is replenished to the aforementioned anolyte tank. (state 3)

上述樣態2中,使陽極液在前述陽極液槽與前述陽極室之間循環,亦可在殘留於前述陽極室之陽極液返回前述陽極液槽之後,且貯存於前述陽極液槽之陽極液的液面水平超過前述指定水平時執行。 (樣態4) In the above-mentioned aspect 2, the anolyte is circulated between the anolyte tank and the anode chamber, and the anolyte stored in the anolyte tank after the anolyte remaining in the anode chamber is returned to the anolyte tank Executed when the liquid level exceeds the previously specified level. (state 4)

上述樣態1~3中任何1個樣態亦可進一步包含當貯存於前述陰極液槽之陰極液的液面水平未達預設之指定水平時,以貯存於前述陰極液槽之陰極液的液面水平超過該指定水平之方式,將從陰極液供給裝置所供給之陰極液補充至前述陰極液槽。 (樣態5) Any one of the above-mentioned conditions 1 to 3 may further include that when the liquid level of the catholyte stored in the catholyte tank does not reach the preset specified level, using the catholyte stored in the catholyte tank When the liquid level exceeds the predetermined level, the catholyte supplied from the catholyte supply device is replenished to the catholyte tank. (state 5)

上述樣態4亦可進一步包含當貯存於前述陰極液槽之陰極液的液面水平超過前述指定水平時,在使陰極液在前述陰極液槽與前述陰極室之間循環之前,使貯存於前述陰極液槽之陰極液旁路流通前述陰極室後,返回前述陰極液槽。The above aspect 4 may further include when the liquid level of the catholyte stored in the catholyte tank exceeds the aforementioned specified level, before the catholyte is circulated between the catholyte tank and the cathode chamber, making the catholyte stored in the aforementioned catholyte tank The catholyte in the catholyte tank returns to the catholyte tank after bypassing the cathode chamber.

採用該樣態時,藉由使陰極液旁路流通陰極室後返回陰極液槽,可使陰極液中包含之氣泡量減少。藉此,可使在此之後進行之陰極液在陰極液槽與陰極室之間循環時,供給至陰極室之陰極液中包含的氣泡量減少。 (樣態6) In this aspect, the amount of air bubbles contained in the catholyte can be reduced by allowing the catholyte to bypass the cathode chamber and then return to the catholyte tank. Thereby, when the catholyte is circulated between the catholyte tank and the cathode chamber, the amount of air bubbles contained in the catholyte supplied to the cathode chamber can be reduced. (pattern 6)

上述樣態1~5中任何1個樣態中,亦可包含使陽極液在前述陽極液槽與前述陽極室之間循環時,藉由調溫器將從前述陽極液槽朝向前述陽極室流通之陽極液的溫度調整至指定的溫度範圍內。In any one of the above-mentioned aspects 1 to 5, when the anolyte is circulated between the anolyte tank and the anode chamber, the anolyte tank is used to flow from the anolyte tank to the anode chamber by a thermostat. The temperature of the anolyte is adjusted to the specified temperature range.

採用該樣態時,可早期將從陽極液槽朝向陽極室而流通之陽極液的溫度設在指定的溫度範圍內。 (樣態7) In this aspect, the temperature of the anolyte flowing from the anolyte tank toward the anode chamber can be set within a predetermined temperature range at an early stage. (state 7)

上述樣態1~6中任何1個樣態中,亦可包含使陰極液在前述陰極液槽與前述陰極室之間循環時,藉由調溫器將從前述陰極液槽朝向前述陰極室而流通之陰極液的溫度調整至指定之溫度範圍內。In any one of the above-mentioned aspects 1 to 6, it may also include that when the catholyte is circulated between the aforementioned catholyte tank and the aforementioned cathode chamber, the thermoregulator will move from the aforementioned catholyte tank to the aforementioned cathode chamber. The temperature of the circulating catholyte is adjusted to the specified temperature range.

採用該樣態時,可早期將從陰極液槽朝向陰極室而流通之陰極液的溫度設在指定的溫度範圍內。In this aspect, the temperature of the catholyte flowing from the catholyte tank toward the cathode chamber can be set within a predetermined temperature range at an early stage.

以下,參照圖式說明本發明之實施形態。另外,圖式係為了容易理解特徵而模式地圖示,各構成元件之尺寸比率等未必與實際者相同。此外,在一些圖式中圖示有X-Y-Z之正交座標作為參考用。該正交座標中,Z方向相當於上方,-Z方向相當於下方(重力作用之方向)。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the drawings are schematically shown for easy understanding of features, and the dimensional ratios and the like of each component are not necessarily the same as the actual ones. In addition, the orthogonal coordinates of X-Y-Z are shown in some drawings for reference. In the orthogonal coordinates, the Z direction corresponds to the upper side, and the −Z direction corresponds to the lower side (the direction in which gravity acts).

圖1係示出本實施形態之鍍覆裝置1000的全體構成的立體圖。圖2係示出本實施形態之鍍覆裝置1000的全體構成的俯視圖。如圖1及圖2所示,鍍覆裝置1000係具備:載入埠100、搬送機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、洗淨模組500、旋乾機600、搬送裝置700、及控制模組800。FIG. 1 is a perspective view showing the overall configuration of a plating apparatus 1000 according to this embodiment. FIG. 2 is a plan view showing the overall configuration of a plating apparatus 1000 according to this embodiment. As shown in Figures 1 and 2, the plating device 1000 is equipped with: a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dipping module 300, a plating module 400, a cleaning Module 500 , spin dryer 600 , conveying device 700 , and control module 800 .

載入埠100係用以將被收容在未圖示的FOUP等匣盒的基板搬入至鍍覆裝置1000、或將基板由鍍覆裝置1000搬出至匣盒的模組。在本實施形態中係以水平方向排列配置4台載入埠100,惟載入埠100的數量及配置為任意。搬送機器人110係用以搬送基板的機器人,構成為在載入埠100、對準器120、及搬送裝置700之間收授基板。搬送機器人110及搬送裝置700係當在搬送機器人110與搬送裝置700之間收授基板時,係可透過暫置台(未圖示)來進行基板的收授。The loading port 100 is a module for carrying substrates stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 or carrying substrates out of the plating apparatus 1000 to the cassette. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring substrates, and is configured to receive and receive substrates between the loading port 100 , the aligner 120 , and the transfer device 700 . When the transfer robot 110 and the transfer device 700 receive and receive substrates between the transfer robot 110 and the transfer device 700 , the transfer of the substrate can be performed through a temporary stand (not shown).

對準器120係用以將基板的定向平面或凹口等的位置對合在預定的方向的模組。在本實施形態中係以水平方向排列配置2台對準器120,惟對準器120的數量及配置為任意。預濕模組200係以純水或脫氣水等處理液將鍍覆處理前的基板的被鍍覆面弄濕,藉此將形成在基板表面的圖案內部的空氣置換成處理液。預濕模組200係構成為施行藉由在鍍覆時將圖案內部的處理液置換成鍍覆液,以對圖案內部容易供給鍍覆液的預濕處理。在本實施形態中係以上下方向排列配置2台預濕模組200,惟預濕模組200的數量及配置為任意。The aligner 120 is a module used to align the positions of the orientation planes or notches of the substrate in a predetermined direction. In this embodiment, two aligners 120 are arranged in a row in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wetting module 200 wets the plated surface of the substrate before the plating process with a treatment solution such as pure water or degassed water, thereby replacing the air inside the pattern formed on the surface of the substrate with the treatment solution. The pre-wetting module 200 is configured to perform pre-wetting treatment for easily supplying the plating solution to the inside of the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. In this embodiment, two pre-humidity modules 200 are arranged vertically, but the number and arrangement of the pre-humidity modules 200 are arbitrary.

預浸模組300係構成為施行例如將形成在鍍覆處理前的基板的被鍍覆面的種層表面等所存在的電阻大的氧化膜,以硫酸或鹽酸等處理液蝕刻去除而將鍍覆基底表面進行洗淨或活性化的預浸處理。在本實施形態中係以上下方向排列配置2台預浸模組300,惟預浸模組300的數量及配置為任意。鍍覆模組400係對基板施行鍍覆處理。在本實施形態中,係以上下方向排列配置3台且以水平方向排列配置4台的12台鍍覆模組400的集合有2個,設有合計24台鍍覆模組400,惟鍍覆模組400的數量及配置為任意。The prepreg module 300 is configured to perform, for example, an oxide film with high resistance formed on the surface of the seed layer of the plated surface of the substrate before the plating process, etch and remove it with a treatment solution such as sulfuric acid or hydrochloric acid, and then the plated The surface of the substrate is cleaned or activated with a pre-dip treatment. In this embodiment, two prepreg modules 300 are arranged vertically, but the number and arrangement of prepreg modules 300 are arbitrary. The plating module 400 performs plating treatment on the substrate. In this embodiment, there are 2 sets of 12 coating modules 400 arranged in an up-and-down direction and 4 units in a horizontal direction, and a total of 24 coating modules 400 are provided. The number and configuration of the modules 400 are arbitrary.

洗淨模組500係構成為對基板施行洗淨處理,俾以去除殘留在鍍覆處理後的基板的鍍覆液等。在本實施形態中係以上下方向排列配置2台洗淨模組500,惟洗淨模組500的數量及配置為任意。旋乾機600係用以使洗淨處理後的基板高速旋轉而乾燥的模組。在本實施形態中係以上下方向排列配置2台旋乾機600,惟旋乾機600的數量及配置為任意。搬送裝置700係用以在鍍覆裝置1000內的複數模組間搬送基板的裝置。控制模組800係構成為控制鍍覆裝置1000的複數模組,可由具備例如與操作員之間的輸出入介面的一般電腦或專用電腦所構成。The cleaning module 500 is configured to perform cleaning treatment on the substrate so as to remove the plating solution and the like remaining on the substrate after the plating treatment. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying the cleaned substrate by rotating it at high speed. In this embodiment, two spin dryers 600 are arranged vertically, but the number and arrangement of spin dryers 600 are arbitrary. The transfer device 700 is a device for transferring substrates between a plurality of modules in the coating device 1000 . The control module 800 is configured as a plurality of modules for controlling the plating apparatus 1000, and can be configured by a general computer or a dedicated computer having an input/output interface with an operator, for example.

以下說明藉由鍍覆裝置1000所為之一連串鍍覆處理之一例。首先,被收容在匣盒的基板被搬入至載入埠100。接著,搬送機器人110係由載入埠100的匣盒取出基板,且將基板搬送至對準器120。對準器120係將基板的定向平面或凹口等的位置對合在預定的方向。搬送機器人110係將以對準器120將方向對合後的基板對搬送裝置700進行收授。An example of a series of plating processes performed by the plating apparatus 1000 will be described below. First, the substrates accommodated in the cassette are loaded into the load port 100 . Next, the transfer robot 110 takes out the substrate from the cassette of the loading port 100 and transfers the substrate to the aligner 120 . The aligner 120 aligns the positions of the orientation flats and notches of the substrate in a predetermined direction. The transfer robot 110 receives and receives the substrate aligned by the aligner 120 to the transfer device 700 .

搬送裝置700係將由搬送機器人110所收取到的基板搬送至預濕模組200。預濕模組200係對基板施行預濕處理。搬送裝置700係將已施行預濕處理的基板搬送至預浸模組300。預浸模組300係對基板施行預浸處理。搬送裝置700係將已施行預浸處理的基板搬送至鍍覆模組400。鍍覆模組400係對基板施行鍍覆處理。The transport device 700 transports the substrates received by the transport robot 110 to the pre-wetting module 200 . The pre-wet module 200 performs pre-wet treatment on the substrate. The transfer device 700 transfers the pre-wetted substrate to the prepreg module 300 . The prepreg module 300 performs prepreg treatment on the substrate. The transport device 700 transports the prepreg-treated substrate to the coating module 400 . The plating module 400 performs plating treatment on the substrate.

搬送裝置700係將已施行鍍覆處理的基板搬送至洗淨模組500。洗淨模組500係對基板施行洗淨處理。搬送裝置700係將已施行洗淨處理的基板搬送至旋乾機600。旋乾機600係對基板施行乾燥處理。搬送裝置700係將已施行乾燥處理的基板對搬送機器人110進行收授。搬送機器人110係將由搬送裝置700所收取到的基板搬送至載入埠100的匣盒。最後由載入埠100搬出收容有基板的匣盒。The transfer device 700 transfers the plated substrate to the cleaning module 500 . The cleaning module 500 performs cleaning processing on the substrate. The transfer device 700 transfers the cleaned substrate to the spin dryer 600 . The spin dryer 600 performs drying treatment on the substrate. The transfer device 700 receives and receives the dried substrate to and from the transfer robot 110 . The transfer robot 110 transfers the substrate received by the transfer device 700 to the cassette of the loading port 100 . Finally, the cassette containing the substrate is carried out from the loading port 100 .

另外,圖1及圖2所說明之鍍覆裝置1000的構成不過是一例,鍍覆裝置1000之構成並非限定於圖1及圖2之構成者。In addition, the structure of the plating apparatus 1000 demonstrated in FIG. 1 and FIG. 2 is just an example, and the structure of the plating apparatus 1000 is not limited to the structure of FIG. 1 and FIG. 2.

繼續,說明鍍覆模組400。另外,本實施形態之鍍覆裝置1000具有的複數個鍍覆模組400具有同樣之構成,因此就1個鍍覆模組400作說明。Next, the plating module 400 will be described. In addition, since the several plating modules 400 which the plating apparatus 1000 of this embodiment has have the same structure, one plating module 400 is demonstrated.

圖3係模式顯示本實施形態之鍍覆裝置1000中的鍍覆模組400之1個鍍覆槽10的周邊構成圖。本實施形態之鍍覆裝置1000係杯式的鍍覆裝置。本實施形態之鍍覆裝置1000的鍍覆模組400具備:鍍覆槽10、基板固持器20、旋轉機構22、升降機構24。FIG. 3 is a diagram schematically showing the surrounding configuration of one coating tank 10 of the coating module 400 in the coating device 1000 of the present embodiment. The coating device 1000 of this embodiment is a cup-type coating device. The plating module 400 of the plating apparatus 1000 of this embodiment includes: a plating tank 10 , a substrate holder 20 , a rotating mechanism 22 , and a lifting mechanism 24 .

另外,本實施形態中,1個鍍覆模組400具備複數個鍍覆槽10。複數個鍍覆槽10的數量係2個以上即可,其具體數量並非特別限定者。本實施形態之一例為1個鍍覆模組400具備4個鍍覆槽10(參照後述之圖4)。In addition, in the present embodiment, one plating module 400 includes a plurality of plating tanks 10 . The number of the plurality of plating tanks 10 should be two or more, and the specific number is not particularly limited. An example of this embodiment is that one plating module 400 is provided with four plating tanks 10 (see FIG. 4 described later).

如圖3所例示,鍍覆槽10藉由上方具有開口之有底的容器而構成。具體而言,鍍覆槽10具有:底壁10a;及從該底壁10a之外緣向上方延伸的外周壁10b;該外周壁10b之上部開口。另外,鍍覆槽10之外周壁10b的形狀並非特別限定者,本實施形態之外周壁10b的一例為具有圓筒形狀。在鍍覆槽10之內部貯存有鍍覆液Ps。在鍍覆槽10之外周壁10b的外側配置有用於貯存從外周壁10b之上端溢流的鍍覆液Ps之溢流槽19。As shown in FIG. 3 , the plating tank 10 is constituted by a bottomed container having an opening above. Specifically, the plating tank 10 has: a bottom wall 10a; an outer peripheral wall 10b extending upward from the outer edge of the bottom wall 10a; and an upper opening of the outer peripheral wall 10b. In addition, the shape of the outer peripheral wall 10b of the coating tank 10 is not specifically limited, An example of the outer peripheral wall 10b of this embodiment has a cylindrical shape. The plating solution Ps is stored inside the plating tank 10 . An overflow tank 19 for storing the plating solution Ps overflowing from the upper end of the outer peripheral wall 10b is disposed outside the outer peripheral wall 10b of the coating tank 10 .

鍍覆液Ps只要係包含構成鍍覆皮膜之金屬元素的離子之容易即可,其具體例並非特別限定者。本實施形態中,鍍覆處理之一例為使用銅鍍覆處理,鍍覆液Ps之一例為使用硫酸銅溶液。The plating liquid Ps should just contain the ion of the metal element which comprises a plating film easily, and the specific example is not specifically limited. In this embodiment, an example of the plating treatment is a copper plating treatment, and an example of the plating solution Ps is a copper sulfate solution.

此外,本實施形態中,在鍍覆液Ps中含有指定之鍍覆添加劑。該指定之鍍覆添加劑的具體例,本實施形態係使用「非離子系鍍覆添加劑」。另外,所謂非離子系鍍覆添加劑,是指在鍍覆液Ps中不顯示離子性之添加劑。In addition, in this embodiment, a predetermined plating additive is contained in the plating solution Ps. As a specific example of the specified plating additive, "non-ionic plating additive" is used in this embodiment. In addition, the term "nonionic plating additive" refers to an additive that does not exhibit ionic properties in the plating solution Ps.

在鍍覆槽10之內部配置有陽極13。此外,陽極13係以在水平方向延伸之方式配置。陽極13之具體種類並非特別限定者,亦可係不溶性陽極,亦可係可溶性陽極。本實施形態之陽極13的一例係使用不溶性陽極。該不溶性陽極之具體種類並非特別限定者,可使用鉑或氧化銥等。An anode 13 is disposed inside the coating tank 10 . In addition, the anode 13 is arranged so as to extend in the horizontal direction. The specific type of the anode 13 is not particularly limited, and may be an insoluble anode or a soluble anode. An example of the anode 13 of this embodiment uses an insoluble anode. The specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, and the like can be used.

在鍍覆槽10內部之後述的陰極室12中配置有離子抵抗體14。具體而言,離子抵抗體14係設於陰極室12中比後述之膜40上方,且比基板Wf下方的部位。離子抵抗體14係可成為抵抗陰極室12中之離子移動的構件,且為了謀求形成於陽極13與基板Wf之間的電場均勻化而設。An ion resist 14 is arranged in the cathode chamber 12 described later inside the plating tank 10 . Specifically, the ion resister 14 is provided in the cathode chamber 12 above the film 40 described later and below the substrate Wf. The ion resister 14 can be a member that resists ion movement in the cathode chamber 12, and is provided for uniformizing the electric field formed between the anode 13 and the substrate Wf.

本實施形態之離子抵抗體14藉由具有以貫穿離子抵抗體14之下面與上面的方式而設之複數個貫穿孔15的板構件而構成。該複數個貫穿孔15設於離子抵抗體14之孔形成區域(本實施形態其一例於俯視時係圓形之區域)。離子抵抗體14之具體材質並非特別限定者,不過,本實施形態中之一例為使用聚醚醚酮等的樹脂。The ion resister 14 of the present embodiment is constituted by a plate member having a plurality of through holes 15 provided to penetrate the lower surface and the upper surface of the ion resister 14 . The plurality of through-holes 15 are provided in the hole formation region of the ion resister 14 (one example of this embodiment is a circular region in plan view). The specific material of the ion resister 14 is not particularly limited, but one example in this embodiment is to use a resin such as polyetheretherketone.

藉由鍍覆模組400具有離子抵抗體14,可謀求形成於基板Wf之鍍覆皮膜(鍍覆層)的膜厚均勻化。但是,該離子抵抗體14並非本實施形態中必要的構件,鍍覆模組400亦可為不具離子抵抗體14之構成。Since the plating module 400 has the ion resister 14, the film thickness of the plating film (plating layer) formed on the substrate Wf can be made uniform. However, the ion resister 14 is not an essential member in this embodiment, and the plating module 400 may be configured without the ion resister 14 .

在鍍覆槽10之內部配置有膜40。鍍覆槽10之內部藉由膜40而劃分成:比膜40下方之陽極室11;與比膜40上方之陰極室12。前述之陽極13配置於陽極室11,離子抵抗體14則配置於陰極室12。此外,在對基板Wf進行鍍覆處理時,係將基板Wf配置於陰極室12。A film 40 is arranged inside the plating tank 10 . The inside of the coating tank 10 is divided by the membrane 40 : the anode chamber 11 below the membrane 40 ; and the cathode chamber 12 above the membrane 40 . The aforementioned anode 13 is arranged in the anode chamber 11 , and the ion resister 14 is arranged in the cathode chamber 12 . In addition, when the plating process is performed on the substrate Wf, the substrate Wf is placed in the cathode chamber 12 .

另外,本實施形態中,係將供給至陽極室11之鍍覆液Ps稱為「陽極液」,並將供給至陰極室12之鍍覆液Ps稱為「陰極液」。In addition, in this embodiment, the plating solution Ps supplied to the anode chamber 11 is called "anolyte", and the plating solution Ps supplied to the cathode chamber 12 is called "cathode solution".

膜40係以容許鍍覆液Ps中所含之離子種(其包含金屬離子)通過膜40,並抑制鍍覆液Ps中所含之非離子係的鍍覆添加劑通過膜40之方式而構成的膜。具體而言,膜40具有複數個微細之孔(微細孔)(省略該微細孔之圖示)。該複數個孔之平均直徑系奈米尺寸(亦即,係1nm以上,999nm以下之尺寸)。藉此,允許包含金屬離子之離子種(其係奈米尺寸)通過膜40之複數個微細孔,另外,抑制非離子系之鍍覆添加劑(其比奈米尺寸大)通過膜40的複數個微細孔。此種膜40例如可使用離子交換膜。The film 40 is formed by allowing the ionic species (including metal ions) contained in the plating solution Ps to pass through the film 40 and inhibiting the non-ionic plating additives contained in the plating solution Ps from passing through the film 40. membrane. Specifically, the film 40 has a plurality of fine pores (micropores) (illustration of these fine pores is omitted). The average diameter of the plurality of pores is a nanometer size (that is, a size of not less than 1 nm and not more than 999 nm). Thereby, ionic species (which are nanometer-sized) including metal ions are allowed to pass through the plurality of micropores of the membrane 40, and in addition, non-ionic plating additives (which are larger than the nanometer size) are prevented from passing through the plurality of micropores of the membrane 40. hole. As such a membrane 40, for example, an ion exchange membrane can be used.

如本實施形態,藉由鍍覆模組400具備膜40,可抑制陰極室12之陰極液中所含的非離子系之鍍覆添加劑向陽極室11移動。藉此,可謀求減少陰極室12之鍍覆添加劑的消耗量。As in this embodiment, since the coating module 400 is provided with the film 40 , the non-ionic plating additive contained in the catholyte in the cathode chamber 12 can be suppressed from moving to the anode chamber 11 . Thereby, consumption of plating additives in the cathode chamber 12 can be reduced.

另外,如圖3所例示,膜40亦可具備對水平方向傾斜之傾斜部位41。具體而言,圖3所例示之膜40的傾斜部位41對水平方向傾斜,並且係以隨著從鍍覆槽10之中央側朝向鍍覆槽10的外周壁10b之側而位於上方的方式傾斜。此外,圖3所例示之膜40的一例,於前視時,為具有「V字狀」的外觀形狀。Moreover, as shown in FIG. 3 as an example, the film 40 may have the inclined part 41 inclined to the horizontal direction. Specifically, the inclined portion 41 of the film 40 shown in FIG. 3 is inclined to the horizontal direction, and is inclined so as to be located upward as it goes from the central side of the coating tank 10 toward the side of the outer peripheral wall 10b of the coating tank 10. . In addition, an example of the film 40 shown in FIG. 3 has a "V-shaped" appearance shape when viewed from the front.

但是,膜40之構成並非限定於上述構成者。例如,膜40亦可不具傾斜部位41,而整體地在水平方向延伸。However, the structure of the film 40 is not limited to the above-mentioned structure. For example, the film 40 may extend horizontally as a whole without the inclined portion 41 .

基板固持器20將作為陰極之基板Wf以基板Wf之被鍍覆面(下面)與陽極13相對的方式而保持。基板固持器20連接於旋轉機構22。旋轉機構22係用於使基板固持器20旋轉之機構。旋轉機構22連接於升降機構24。升降機構24藉由在上下方向延伸之支柱26而支撐。升降機構24係用於使基板固持器20及旋轉機構22升降的機構。旋轉機構22及升降機構24之動作藉由控制模組800來控制。另外,基板Wf及陽極13與通電裝置(無圖示)電性連接。通電裝置係執行鍍覆處理時,用於在基板Wf與陽極13之間流通電流的裝置。The substrate holder 20 holds the substrate Wf serving as the cathode so that the surface to be plated (lower surface) of the substrate Wf faces the anode 13 . The substrate holder 20 is connected to a rotation mechanism 22 . The rotation mechanism 22 is a mechanism for rotating the substrate holder 20 . The rotating mechanism 22 is connected to the lifting mechanism 24 . The elevating mechanism 24 is supported by a pillar 26 extending in the vertical direction. The elevating mechanism 24 is a mechanism for elevating the substrate holder 20 and the rotating mechanism 22 . The actions of the rotating mechanism 22 and the lifting mechanism 24 are controlled by the control module 800 . In addition, the substrate Wf and the anode 13 are electrically connected to a power supply device (not shown). The energizing device is a device for passing current between the substrate Wf and the anode 13 when the plating process is performed.

鍍覆槽10中設有:用於在陽極室11中供給陽極液之陽極室用供給口16a;及用於從陽極室11排出陽極液之陽極室用排出口16b。本實施形態之陽極室用供給口16a的一例為配置於鍍覆槽10之底壁10a。陽極室用排出口16b之一例為配置於鍍覆槽10的外周壁10b。此外,陽極室用排出口16b之一例為設於鍍覆槽10的2處。The coating tank 10 is provided with: an anode chamber supply port 16 a for supplying the anolyte to the anode chamber 11 ; and an anode chamber discharge port 16 b for discharging the anolyte from the anode chamber 11 . An example of the supply port 16a for an anode chamber of the present embodiment is arranged on the bottom wall 10a of the plating tank 10 . An example of the discharge port 16b for an anode chamber is arrange|positioned at the outer peripheral wall 10b of the coating tank 10. As shown in FIG. In addition, as an example of the discharge port 16b for an anode chamber, it is provided in two places of the coating tank 10. As shown in FIG.

此外,在鍍覆槽10中設有陰極室12用之供給‧排放口17。供給‧排放口17係「陰極液用之供給口」與「陰極液用之排放口」合體者。In addition, a supply and discharge port 17 for the cathode chamber 12 is provided in the coating tank 10 . The supply and discharge port 17 is a combination of "supply port for catholyte" and "discharge port for catholyte".

亦即,在陰極室12中供給陰極液時,該供給‧排放口17發揮「陰極液用之供給口」的功能,而從該供給‧排放口17供給陰極液至陰極室12。另外,從陰極室12排出陰極液,例如排空陰極室12之陰極液時,該供給‧排放口17發揮「陰極液用之排放口」的功能,而從該供給‧排放口17排出陰極液。That is, when the catholyte is supplied to the cathode chamber 12 , the supply and discharge port 17 functions as a "supply port for catholyte", and the catholyte is supplied to the cathode chamber 12 from the supply and discharge port 17 . In addition, the catholyte is discharged from the cathode chamber 12. For example, when the catholyte in the cathode chamber 12 is emptied, the supply and discharge port 17 functions as a "cathode liquid discharge port", and the catholyte is discharged from the supply and discharge port 17. .

另外,供給‧排放口17之構成並非限定於上述構成者。舉出其他一例時,鍍覆模組400亦可個別地具備「陰極液用之供給口」、及「陰極液用之排放口」,來取代供給‧排放口17。In addition, the configuration of the supply/discharge port 17 is not limited to the configuration described above. When another example is given, the plating module 400 may be individually provided with a "supply port for catholyte" and a "discharge port for catholyte" instead of the supply/discharge port 17 .

本實施形態之供給‧排放口17的一例,係以從陰極室12之底部(底面)至供給‧排放口17的距離例如小於20mm之方式而配置於鍍覆槽10的外周壁10b。An example of the supply and discharge port 17 of this embodiment is arranged on the outer peripheral wall 10b of the coating tank 10 such that the distance from the bottom (bottom surface) of the cathode chamber 12 to the supply and discharge port 17 is less than 20 mm, for example.

溢流槽19中設有用於將從陰極室12溢流而貯存於溢流槽19之鍍覆液Ps(陰極液)排出溢流槽19外部的溢流槽用排出口18。The overflow tank 19 is provided with an overflow tank discharge port 18 for discharging the plating solution Ps (catholyte) overflowing from the cathode chamber 12 and stored in the overflow tank 19 to the outside of the overflow tank 19 .

鍍覆槽10中配置有:用於檢測陽極室11之壓力(Pa)的壓力計80a;及用於檢測陰極室12之壓力(Pa)的壓力計80b。壓力計80a及壓力計80b之檢測結果傳送至控制模組800。The coating tank 10 is provided with: a pressure gauge 80 a for detecting the pressure (Pa) of the anode chamber 11 ; and a pressure gauge 80 b for detecting the pressure (Pa) of the cathode chamber 12 . The detection results of the pressure gauge 80a and the pressure gauge 80b are sent to the control module 800 .

控制模組800具備:處理器801、及永久性之記憶裝置802。記憶裝置802中記憶有程式及資料等。控制模組800中,處理器801依據記憶於記憶裝置802之程式的指令控制鍍覆裝置1000之動作。The control module 800 includes: a processor 801 and a permanent memory device 802 . Programs, data, and the like are stored in the memory device 802 . In the control module 800 , the processor 801 controls the action of the coating device 1000 according to the instructions of the program stored in the memory device 802 .

對基板Wf執行鍍覆處理時,首先,旋轉機構22使基板固持器20旋轉,並且升降機構24使基板固持器20移動至下方,而使基板Wf浸漬於鍍覆槽10之鍍覆液Ps(陰極室12之陰極液)。接著,藉由通電裝置在陽極13與基板Wf之間流通電流。藉此,在基板Wf之被鍍覆面上形成鍍覆皮膜。When performing the plating process on the substrate Wf, first, the rotating mechanism 22 rotates the substrate holder 20, and the elevating mechanism 24 moves the substrate holder 20 downward, so that the substrate Wf is immersed in the plating solution Ps ( catholyte in cathode chamber 12). Next, a current is passed between the anode 13 and the substrate Wf by means of an energization device. Thereby, a plating film is formed on the surface to be plated of the substrate Wf.

圖4係顯示1個鍍覆模組400之液體流通構成的模式圖。如圖4所示,鍍覆模組400具備:槽50、51、泵浦52a、52b、調溫器53a、53b、過濾器54、陽極液供給裝置57a、陰極液供給裝置57b、添加劑供給裝置57c、金屬離子供給裝置57d、複數條流路(流路70a~70g4)、複數個閥門(閥門75a~75o)、及複數個流路切換閥(流路切換閥77a~77d等)。FIG. 4 is a schematic diagram showing a liquid circulation structure of a coating module 400 . As shown in Figure 4, the coating module 400 has: tanks 50, 51, pumps 52a, 52b, thermostats 53a, 53b, filter 54, anolyte supply device 57a, catholyte supply device 57b, additive supply device 57c, a metal ion supply device 57d, a plurality of flow paths (flow paths 70a to 70g4), a plurality of valves (valve 75a to 75o), and a plurality of flow path switching valves (flow path switching valves 77a to 77d, etc.).

另外,本實施形態之一例為對1組槽50及槽51適用4個鍍覆槽10(#1~#4之鍍覆槽10)。亦即,本實施形態中,經由流路而連通於1組槽50及槽51之鍍覆槽10數量的一例為4個。但是,對1組槽50及槽51適用之鍍覆槽10的數量只要是複數個即可,亦可比4少,亦可比其多。In addition, as an example of this embodiment, four plating tanks 10 (plating tanks 10 of #1 to #4) are applied to one set of tanks 50 and 51 . That is, in the present embodiment, an example of the number of plating tanks 10 communicating with one set of tanks 50 and 51 via flow paths is four. However, the number of plating tanks 10 applicable to one set of tanks 50 and 51 should just be plural, and may be less than four or may be more than that.

複數個閥門(閥門75a~75o)可使用可至少切換關閥狀態(閥門開度係0%狀態,且通過閥門之液體的流量為零之狀態);與開閥狀態(閥門開度係比0%大之狀態,且通過閥門之液體的流量為比零大之狀態)的流量調整閥。A plurality of valves (valve 75a~75o) can be used to switch at least the valve closed state (valve opening is 0% state, and the flow of liquid through the valve is zero state); and the valve open state (valve opening is 0% state); % large state, and the flow rate of the liquid through the valve is greater than zero state) flow regulating valve.

此外,此等複數個閥門亦可使用可在0%以上,100%以下之範圍內(亦即,通過閥門之流量為零以上,指定值以下之範圍內)連續或階段性調整閥門開度的流量調整閥。In addition, these multiple valves can also be used to continuously or stepwise adjust the valve opening within the range of 0% and below 100% (that is, the flow through the valve is between zero and below the specified value). Flow adjustment valve.

另外,複數個閥門及複數個流路切換閥亦可係藉由控制模組800而控制之閥門,或是,亦可係藉由手動而動作之手動式閥門。本實施形態中,複數個閥門及複數個流路切換閥係藉由控制模組800來控制。In addition, the plurality of valves and the plurality of flow path switching valves may also be valves controlled by the control module 800, or may also be manual valves operated manually. In this embodiment, the plurality of valves and the plurality of flow switching valves are controlled by the control module 800 .

槽50係用於貯存陽極液之槽。槽50連通於陽極室11。槽51係用於貯存陰極液之槽。槽51連通於陰極室12。另外,槽50係「陽極液槽」之一例,槽51係「陰極液槽」之一例。Tank 50 is a tank for storing anolyte. The tank 50 communicates with the anode chamber 11 . Tank 51 is a tank for storing catholyte. The tank 51 communicates with the cathode chamber 12 . In addition, the tank 50 is an example of the "anolyte tank", and the tank 51 is an example of the "catholyte tank".

槽50中配置有用於檢測貯存於槽50之陽極液的液面水平之液面水平檢測器81a。此外,槽51中亦配置有用於檢測貯存於槽51之陰極液的液面水平之液面水平檢測器81b。液面水平檢測器81a、81b之檢測結果傳送至控制模組800。The tank 50 is provided with a liquid level detector 81 a for detecting the liquid level of the anolyte stored in the tank 50 . In addition, a liquid level detector 81b for detecting the liquid level of the catholyte stored in the tank 51 is also disposed in the tank 51 . The detection results of the liquid level detectors 81 a and 81 b are sent to the control module 800 .

泵浦52a係用於將槽50之陽極液朝向陽極室11壓送的泵浦。泵浦52b係用於將槽51之陰極液朝向陰極室12壓送的泵浦。泵浦52a、52b之動作由控制模組800控制。另外,泵浦52a係「陽極液泵浦」之一例,泵浦52b係「陰極液泵浦」之一例。The pump 52 a is a pump for pressure-feeding the anolyte in the tank 50 toward the anode chamber 11 . The pump 52 b is a pump for pressure-feeding the catholyte in the tank 51 toward the cathode chamber 12 . The actions of the pumps 52a, 52b are controlled by the control module 800 . In addition, the pump 52a is an example of "anolyte pumping", and the pump 52b is an example of "catholyte pumping".

調溫器53a係用於調整陽極液之溫度的裝置。調溫器53b係用於調整陰極液之溫度的裝置。本實施形態之調溫器53a的一例為配置於流路70a之比泵浦52a下游側的部位。本實施形態之調溫器53b的一例為配置於流路70c之比泵浦52b下游側的部位。調溫器53a、53b之動作由控制模組800控制。The thermostat 53a is a device for adjusting the temperature of the anolyte. The thermostat 53b is a device for adjusting the temperature of the catholyte. An example of the thermostat 53a of this embodiment is arranged on the downstream side of the flow path 70a from the pump 52a. An example of the thermostat 53b of this embodiment is arranged on the downstream side of the flow path 70c from the pump 52b. The actions of the thermostats 53a and 53b are controlled by the control module 800 .

如圖5所示,過濾器54係用於過濾從槽51朝向陰極室12而流通之陰極液的裝置。過濾器54配置於後述之流路70c的例如比調溫器53b下游側之部位。As shown in FIG. 5 , the filter 54 is a device for filtering the catholyte flowing from the tank 51 toward the cathode chamber 12 . The filter 54 is arranged, for example, downstream of the thermostat 53b in the flow path 70c described later.

另外,鍍覆模組400具有之過濾器的數量並非限定於1個者,亦可係2個以上。或是,鍍覆模組400亦可為不具過濾器之構成。In addition, the number of filters included in the coating module 400 is not limited to one, but may be two or more. Alternatively, the coating module 400 may also be configured without a filter.

陽極液供給裝置57a係用於供給陽極液之裝置。陽極液供給裝置57a供給之陽極液亦可係未使用之陽極液(亦即,新的陽極液),亦可係使用於鍍覆處理之陽極液。陰極液供給裝置57b係用於供給陰極液之裝置。陰極液供給裝置57b供給之陰極液亦可係未使用之陰極液(亦即,新的陰極液),亦可係使用於鍍覆處理之陰極液。The anolyte supply device 57a is a device for supplying anolyte. The anolyte supplied by the anolyte supply device 57a may also be unused anolyte (that is, new anolyte), or anolyte used in plating treatment. The catholyte supply device 57b is a device for supplying catholyte. The catholyte supplied by the catholyte supply device 57b may also be unused catholyte (that is, new catholyte), or catholyte used in plating treatment.

陽極液供給裝置57a之具體構成並非特別限定者,例如,陽極液供給裝置57a亦可具備:用於貯存供給用之陽極液的槽;及用於經由流路70g1而朝向槽50壓送該槽之陽極液的泵浦。陰極液供給裝置57b之具體構成並非特別限定者,例如陰極液供給裝置57b亦可具備:用於貯存供給用之陰極液的槽;及用於經由流路70g2而朝向槽51壓送該槽之陰極液的泵浦。本實施形態之陽極液供給裝置57a及陰極液供給裝置57b的動作由控制模組800控制。The specific structure of the anolyte supply device 57a is not particularly limited. For example, the anolyte supply device 57a may also include: a tank for storing the anolyte for supply; The pumping of the anolyte. The specific structure of the catholyte supply device 57b is not particularly limited. For example, the catholyte supply device 57b may also be provided with: a tank for storing catholyte for supply; Pumping of catholyte. The operation of the anolyte supply device 57 a and the catholyte supply device 57 b in this embodiment is controlled by the control module 800 .

添加劑供給裝置57c係用於供給鍍覆添加劑的裝置。本實施形態中,添加劑供給裝置57c用在對鍍覆液Ps補充鍍覆添加劑時。具體而言,本實施形態之添加劑供給裝置57c的一例為用於在槽51之陰極液中補充鍍覆添加劑時。本實施形態之添加劑供給裝置57c的動作由控制模組800控制。The additive supply device 57c is a device for supplying plating additives. In this embodiment, the additive supply device 57c is used when replenishing the plating additive to the plating solution Ps. Specifically, an example of the additive supply device 57 c of this embodiment is used when replenishing the plating additive in the catholyte in the tank 51 . The operation of the additive supply device 57c in this embodiment is controlled by the control module 800 .

金屬離子供給裝置57d係用於供給金屬離子的裝置。本實施形態之金屬離子供給裝置57d係用於在鍍覆液Ps中補充金屬離子時。具體而言,本實施形態之金屬離子供給裝置57d的一例為用於在槽51之陰極液中補充包含金屬離子(一例為銅離子)的溶液時。本實施形態之金屬離子供給裝置57d的動作由控制模組800控制。The metal ion supply device 57d is a device for supplying metal ions. The metal ion supply device 57d of this embodiment is used when replenishing metal ions in the plating solution Ps. Specifically, an example of the metal ion supply device 57d of this embodiment is used when replenishing a solution containing metal ions (one example is copper ions) to the catholyte in the tank 51 . The operation of the metal ion supply device 57d in this embodiment is controlled by the control module 800 .

流路70a連通槽50、泵浦52a與各個鍍覆槽10之陽極室11。此外,本實施形態之流路70a中配置有調溫器53a。本實施形態之流路70a在比調溫器53a下游側之部位分支成複數條,而變成流路70a1、流路70a2、流路70a3、及流路70a4,並連通於各個鍍覆槽10之陽極室11。The flow path 70 a communicates with the tank 50 , the pump 52 a and the anode chamber 11 of each plating tank 10 . Moreover, the temperature regulator 53a is arrange|positioned in the flow path 70a of this embodiment. The flow path 70a of this embodiment is branched into a plurality of lines at the downstream side of the thermostat 53a, and becomes a flow path 70a1, a flow path 70a2, a flow path 70a3, and a flow path 70a4, and communicates with each of the coating tanks 10. Anode chamber 11.

流路70a1之下游端連通於#1之鍍覆槽10的陽極室用供給口16a。流路70a2之下游端連通於#2之鍍覆槽10的陽極室用供給口16a。流路70a3之下游端連通於#3之鍍覆槽10的陽極室用供給口16a。流路70a4之下游端連通於#4之鍍覆槽10的陽極室用供給口16a。The downstream end of the flow path 70a1 communicates with the supply port 16a for the anode chamber of the coating tank 10 of #1. The downstream end of the flow path 70a2 communicates with the supply port 16a for the anode chamber of the coating tank 10 of #2. The downstream end of the flow path 70a3 communicates with the supply port 16a for the anode chamber of the coating tank 10 of #3. The downstream end of the flow path 70a4 communicates with the supply port 16a for the anode chamber of the coating tank 10 of #4.

流路70b1、70b2、70b3、70b4係以將各個鍍覆槽10之陽極室11的陽極液返回槽50之方式而構成的流路。The flow paths 70b1 , 70b2 , 70b3 , and 70b4 are flow paths configured to return the anolyte in the anode chamber 11 of each plating tank 10 to the tank 50 .

具體而言,本實施形態之流路70b1在比指定部位上游側的部分分支成2條,並連通於#1之鍍覆槽10的2個陽極室用排出口16b。流路70b1之下游端連通於槽50。流路70b2之比指定部位上游側的部分分支成2條,並連通於#2之鍍覆槽10的2個陽極室用排出口16b。流路70b2之下游端連通於槽50。Specifically, the flow path 70b1 of the present embodiment is branched into two at the upstream side of the designated position, and communicates with the two anode chamber discharge ports 16b of the #1 coating tank 10 . The downstream end of the flow path 70b1 communicates with the tank 50 . The part of the flow path 70b2 on the upstream side of the designated position is branched into two, and communicated with the two anode chamber discharge ports 16b of the coating tank 10 of #2. The downstream end of the flow path 70b2 communicates with the tank 50 .

流路70b3之比指定部位上游側的部分分支成2條,並連通於#3之鍍覆槽10的2個陽極室用排出口16b。流路70b3之下游端連通於槽50。流路70b4之比指定部位上游側的部分分支成2條,並連通於#4之鍍覆槽10的2個陽極室用排出口16b。流路70b4之下游端連通於槽50。The part of the flow path 70b3 on the upstream side of the designated part is branched into two, and communicates with the two anode chamber discharge ports 16b of the coating tank 10 of #3. The downstream end of the flow path 70b3 communicates with the tank 50 . The part of the flow path 70b4 on the upstream side of the designated part is branched into two, and communicates with the two anode chamber discharge ports 16b of the coating tank 10 of #4. The downstream end of the flow path 70b4 communicates with the tank 50 .

流路70c連通槽51、泵浦52b、及各個鍍覆槽10之陰極室12。此外,本實施形態之流路70c中配置有調溫器53b及過濾器54。本實施形態之流路70c在比過濾器54下游側之部位分支成複數條,而變成流路70c1、70c2、70c3、70c4。The flow path 70c communicates with the tank 51, the pump 52b, and the cathode chamber 12 of each plating tank 10. In addition, the temperature regulator 53b and the filter 54 are arrange|positioned in the flow path 70c of this embodiment. The flow path 70c of the present embodiment is branched into a plurality of flow paths 70c1, 70c2, 70c3, and 70c4 at the downstream side of the filter 54.

流路70c1之下游端連通於#1之鍍覆槽10的供給‧排放口17。流路70c2之下游端連通於#2之鍍覆槽10的供給‧排放口17。流路70c3之下游端連通於#3之鍍覆槽10的供給‧排放口17。流路70c4之下游端連通於#4之鍍覆槽10的供給‧排放口17。The downstream end of the flow path 70c1 is connected to the supply/discharge port 17 of the coating tank 10 of #1. The downstream end of the flow path 70c2 is connected to the supply/discharge port 17 of the coating tank 10 of #2. The downstream end of the flow path 70c3 is connected to the supply/discharge port 17 of the coating tank 10 of #3. The downstream end of the flow path 70c4 is connected to the supply/discharge port 17 of the coating tank 10 of #4.

流路70d1、70d2、70d3、70d4係以將各個鍍覆槽10之溢流槽19的陰極液返回槽51之方式而構成的流路。具體而言,流路70d1之上游端連通於#1之鍍覆槽10的溢流槽用排出口18,下游端連通於槽51。流路70d2之上游端連通於#2之鍍覆槽10的溢流槽用排出口18,下游端連通於槽51。流路70d3之上游端連通於#3之鍍覆槽10的溢流槽用排出口18,下游端連通於槽51。流路70d4之上游端連通於#4之鍍覆槽10的溢流槽用排出口18,下游端連通於槽51。The flow paths 70d1 , 70d2 , 70d3 , and 70d4 are flow paths configured to return the catholyte in the overflow tank 19 of each plating tank 10 to the tank 51 . Specifically, the upstream end of the flow path 70d1 communicates with the overflow tank discharge port 18 of the coating tank 10 of #1, and the downstream end communicates with the tank 51 . The upstream end of the flow path 70d2 is connected to the discharge port 18 for overflow tank of the coating tank 10 of #2, and the downstream end is connected to the tank 51 . The upstream end of the flow path 70d3 communicates with the discharge port 18 for an overflow tank of the coating tank 10 of #3, and the downstream end communicates with the tank 51 . The upstream end of the flow path 70d4 communicates with the discharge port 18 for an overflow tank of the coating tank 10 of #4, and the downstream end communicates with the tank 51 .

流路70e1、70e2、70e3、70e4係以使陰極液旁路流通陰極室12後返回槽51之方式而構成的流路。具體而言,流路70e1之上游端經由流路切換閥77a連通於流路70c1的中途,下游端連通於槽51。流路70e2之上游端經由流路切換閥77b連通於流路70c2的中途,下游端連通於槽51。流路70e3之上游端經由流路切換閥77c連通於流路70c3的中途,下游端連通於槽51。流路70e4之上游端經由流路切換閥77d連通於流路70c4的中途,下游端連通於槽51。The flow paths 70e1 , 70e2 , 70e3 , and 70e4 are flow paths configured such that the catholyte bypasses the cathode chamber 12 and then returns to the tank 51 . Specifically, the upstream end of the flow path 70e1 communicates with the middle of the flow path 70c1 via the flow path switching valve 77a, and the downstream end communicates with the groove 51 . The upstream end of the flow path 70e2 communicates with the middle of the flow path 70c2 via the flow path switching valve 77b, and the downstream end communicates with the groove 51. The upstream end of the flow path 70e3 communicates with the middle of the flow path 70c3 via the flow path switching valve 77c, and the downstream end communicates with the tank 51 . The upstream end of the flow path 70e4 communicates with the middle of the flow path 70c4 via the flow path switching valve 77d, and the downstream end communicates with the groove 51.

流路70g1係以使從陽極液供給裝置57a供給之陽極液流入槽50的方式而構成之流路。具體而言,流路70g1之上游端連通於陽極液供給裝置57a,下游端連通於槽50。流路70g2係以使從陰極液供給裝置57b供給之陰極液流入槽51的方式而構成之流路。具體而言,流路70g2之上游端連通於陰極液供給裝置57b,下游端連通於槽51。The flow path 70g1 is a flow path configured so that the anolyte supplied from the anolyte supply device 57a flows into the tank 50 . Specifically, the upstream end of the flow path 70g1 communicates with the anolyte supply device 57 a , and the downstream end communicates with the tank 50 . The flow path 70g2 is a flow path configured such that the catholyte supplied from the catholyte supply device 57b flows into the tank 51 . Specifically, the upstream end of the flow path 70g2 communicates with the catholyte supply device 57b , and the downstream end communicates with the tank 51 .

流路70g3係以使從添加劑供給裝置57c供給之鍍覆添加劑流入槽51的方式而構成之流路。流路70g4係以使包含從金屬離子供給裝置57d供給之金屬離子的溶液流入槽51之方式而構成的流路。The flow path 70g3 is a flow path configured such that the plating additive supplied from the additive supply device 57c flows into the tank 51 . The flow path 70g4 is a flow path configured such that a solution containing metal ions supplied from the metal ion supply device 57d flows into the tank 51 .

流路70f係以連通槽50與槽51之方式而構成的流路(連通流路)。具體而言,本實施形態之流路70f係以連通流路70a之中途部位(比後述之閥門75a上游側的部位)與流路70c之中途部位(比後述之閥門75j上游側的部位)之方式而構成。The flow path 70 f is a flow path (communication flow path) configured so as to communicate with the groove 50 and the groove 51 . Specifically, the flow path 70f of the present embodiment is designed to communicate with the middle part of the flow path 70a (the part upstream of the valve 75a described later) and the middle part of the flow path 70c (the part upstream of the valve 75j described later). constituted in a manner.

流路70f中配置有用於開閉流路70f之閥門75k。閥門75k變成開閥狀態時,槽50及槽51經由流路70f而變成彼此連通的狀態。另外,當閥門75k變成關閥狀態時,槽50及槽51變成不連通狀態。A valve 75k for opening and closing the flow path 70f is arranged in the flow path 70f. When the valve 75k is opened, the groove 50 and the groove 51 are communicated with each other via the flow path 70f. Also, when the valve 75k is in the closed state, the tank 50 and the tank 51 are in a non-communicative state.

採用本實施形態時,陽極液及陰極液為使用不同成分之鍍覆液情況下,藉由將閥門75k形成關閥狀態而關閉流路70f,可使槽50之陽極液不致與槽51之陰極液混合。另外,例如,陽極液及陰極液為使用相同成分的鍍覆液情況下,藉由將閥門75k形成開閥狀態而打開流路70f,使槽50與槽51連通,亦可使槽50及槽51發揮1個大的鍍覆液槽之功能。When adopting this embodiment, when the anolyte and the catholyte are plating solutions with different components, by closing the valve 75k to close the flow path 70f, the anolyte in the tank 50 will not interfere with the cathode in the tank 51. liquid mix. In addition, for example, when the anolyte and the catholyte are plating solutions using the same composition, by opening the valve 75k to open the flow path 70f, the tank 50 and the tank 51 are communicated, and the tank 50 and the tank 51 can also be connected. 51 plays the function of a large plating solution tank.

閥門75a配置於流路70a中比泵浦52a上游側,且比流路70a中連接有流路70f之部位下游側的部位。The valve 75a is arranged on the upstream side of the pump 52a in the flow path 70a and downstream of the portion connected to the flow path 70f in the flow path 70a.

閥門75b配置於流路70a1。閥門75c配置於流路70a2。閥門75d配置於流路70a3。閥門75e配置於流路70a4。The valve 75b is arranged in the flow path 70a1. The valve 75c is arranged in the flow path 70a2. The valve 75d is arranged in the flow path 70a3. The valve 75e is arranged in the flow path 70a4.

閥門75f配置於流路70b1。閥門75g配置於流路70b2。閥門75h配置於流路70b3。閥門75i配置於流路70b4。The valve 75f is arranged in the flow path 70b1. The valve 75g is arranged in the flow path 70b2. The valve 75h is arranged in the flow path 70b3. The valve 75i is arranged in the flow path 70b4.

閥門75j配置於流路70c中比泵浦52b上游側,且流路70c中比流路70f連接之部位下游側的部位。閥門75l配置於流路70g1。閥門75m配置於流路70g2。閥門75n配置於流路70g3。閥門75o配置於流路70g4。The valve 75j is arranged on the upstream side of the pump 52b in the flow path 70c and downstream of the portion connected to the flow path 70f in the flow path 70c. The valve 75l is arranged in the flow path 70g1. The valve 75m is arranged in the flow path 70g2. The valve 75n is arranged in the flow path 70g3. The valve 75o is arranged in the flow path 70g4.

流路切換閥77a配置於流路70c1中流路70e1連接之部位。流路切換閥77a在流路70e1與#1之鍍覆槽10的陽極室11之間切換流路70c1之流體的流動目的地。流路切換閥77b配置於流路70c2中流路70e2連接之部位。流路切換閥77b在流路70e2與#2之鍍覆槽10的陽極室11之間切換流路70c2之流體的流動目的地。The flow path switching valve 77a is arranged in the portion of the flow path 70c1 where the flow path 70e1 is connected. The flow path switching valve 77a switches the flow destination of the fluid in the flow path 70c1 between the flow path 70e1 and the anode chamber 11 of the #1 plating tank 10 . The flow path switching valve 77b is arranged in the portion of the flow path 70c2 where the flow path 70e2 is connected. The flow path switching valve 77b switches the flow destination of the fluid in the flow path 70c2 between the flow path 70e2 and the anode chamber 11 of the plating tank 10 of #2.

流路切換閥77c配置於流路70c3中流路70e3連接之部位。流路切換閥77c在流路70e3與#3之鍍覆槽10的陽極室11之間切換流路70c3的流體之流動目的地。流路切換閥77d配置於流路70c4中流路70e4連接之部位。流路切換閥77d在流路70e4與#4之鍍覆槽10的陽極室11之間切換流路70c4的流體之流動目的地。The channel switching valve 77c is disposed at a portion of the channel 70c3 where the channel 70e3 is connected. The flow path switching valve 77c switches the flow destination of the fluid in the flow path 70c3 between the flow path 70e3 and the anode chamber 11 of the #3 plating tank 10 . The channel switching valve 77d is disposed at a portion of the channel 70c4 where the channel 70e4 is connected. The flow path switching valve 77d switches the flow destination of the fluid in the flow path 70c4 between the flow path 70e4 and the anode chamber 11 of the #4 plating tank 10 .

另外,流路切換閥77a、77b、77c、77d可使用所謂的三通閥。In addition, so-called three-way valves can be used as the flow path switching valves 77a, 77b, 77c, and 77d.

圖5係用於說明鍍覆模組400中之液體流通樣態的一例之流程圖。圖5之各步驟中,步驟S20之鍍覆液循環步驟係在對基板Wf實施鍍覆處理時執行。另外,步驟S10係在鍍覆裝置1000維護時執行。亦即,步驟S10相當於鍍覆裝置1000之維護方法。此外,圖5之各步驟例如亦可由控制模組800依據程式之指令而自動執行。 <<鍍覆液循環步驟>> FIG. 5 is a flowchart for explaining an example of a state of liquid circulation in the plating module 400 . Among the steps in FIG. 5 , the plating solution circulation step in step S20 is performed when the substrate Wf is plated. In addition, step S10 is performed during maintenance of the plating apparatus 1000 . That is, step S10 corresponds to the maintenance method of the plating apparatus 1000 . In addition, each step in FIG. 5 can also be automatically executed by the control module 800 according to the instruction of the program, for example. <<Plating solution circulation steps>>

首先,說明圖5之步驟S20的鍍覆液循環步驟。在步驟S20之鍍覆液循環步驟中,使陽極液在槽50與陽極室11之間循環,並且使陰極液在槽51與陰極室12之間循環。 (陽極循環) First, the plating solution circulation step of step S20 in FIG. 5 will be described. In the plating solution circulation step of step S20 , the anolyte is circulated between the tank 50 and the anode chamber 11 , and the catholyte is circulated between the tank 51 and the cathode chamber 12 . (anode cycle)

具體而言,使陽極液循環時,係使泵浦52a驅動並且將閥門75a、75b、75c、75d、75e、75f、75g、75h、75i形成開閥狀態。藉此,槽50之陽極液在流路70a中流動後,繼續在流路70a1、70a2、70a3、70a4中流動,而流入#1~#4之鍍覆槽10的陽極室11。而後,#1~#4之鍍覆槽10的陽極室11之陽極液在流路70b1、70b2、70b3、70b4中流動後返回槽50。Specifically, when circulating the anolyte, the pump 52a is driven and the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h, and 75i are opened. Thereby, the anolyte in the tank 50 flows in the flow channel 70a, continues to flow in the flow channels 70a1, 70a2, 70a3, and 70a4, and flows into the anode chambers 11 of the coating tanks 10 of #1 to #4. Then, the anolyte in the anode chambers 11 of the coating tanks 10 of #1 to #4 flows through the flow paths 70b1, 70b2, 70b3, and 70b4 and returns to the tank 50.

另外,流路70a、70a1、70a2、70a3、70a4係用於將槽50之陽極液供給至陽極室11的「陽極液供給流路」之一例。此外,流路70b1、70b2、70b3、70b4係用於將陽極室11之陽極液返回槽50的「陽極液返回流路」之一例。此外,陽極液供給流路及陽極液返回流路係用於使陽極液在槽50與陽極室11之間循環的「陽極液循環流路」之一例。 (陰極循環) In addition, the flow paths 70 a , 70 a 1 , 70 a 2 , 70 a 3 , and 70 a 4 are examples of “anolyte supply flow paths” for supplying the anolyte in the tank 50 to the anode chamber 11 . In addition, the flow paths 70b1 , 70b2 , 70b3 , and 70b4 are examples of “anolyte return flow paths” for returning the anolyte in the anode chamber 11 to the tank 50 . In addition, the anolyte supply flow path and the anolyte return flow path are examples of the “anolyte circulation flow path” for circulating the anolyte between the tank 50 and the anode chamber 11 . (cathode cycle)

此外,使陰極液循環時,具體而言,使泵浦52b驅動並且將閥門75j形成開閥狀態。進一步,以陰極液流入陰極室12之方式切換流路切換閥77a、77b、77c、77d藉此,槽51之陰極液在流路70c中流動後,繼續在流路70c1、70c2、70c3、70c4中流動而流入#1~#4之鍍覆槽10的陰極室12。從陰極室12溢流而流入溢流槽19之陰極液在流路70d1、70d2、70d3、70d4中流動而返回槽51。In addition, when circulating the catholyte, specifically, the pump 52b is driven and the valve 75j is opened. Further, the flow path switching valves 77a, 77b, 77c, and 77d are switched in such a way that the catholyte flows into the cathode chamber 12 that, after the catholyte in the tank 51 flows in the flow path 70c, it continues to flow through the flow paths 70c1, 70c2, 70c3, and 70c4. Flow in and flow into the cathode chamber 12 of the coating tank 10 of #1~#4. The catholyte overflowed from the cathode chamber 12 and flowed into the overflow tank 19 flows through the flow paths 70d1 , 70d2 , 70d3 , and 70d4 and returns to the tank 51 .

另外,流路70c、70c1、70c2、70c3、70c4係用於將槽51之陰極液供給至陰極室12的「陰極液供給流路」之一例。此外,流路70d1、70d2、70d3、70d4係用於將陰極室12之陰極液返回槽51的「陰極液返回流路」之一例。此外,陰極液供給流路及陰極液返回流路係使陰極液在槽51與陰極室12之間循環的「陰極液循環流路」之一例。In addition, the flow paths 70 c , 70 c 1 , 70 c 2 , 70 c 3 , and 70 c 4 are examples of “catholyte supply flow paths” for supplying the catholyte in the tank 51 to the cathode chamber 12 . In addition, the flow paths 70d1, 70d2, 70d3, and 70d4 are examples of "catholyte return flow paths" for returning the catholyte in the cathode chamber 12 to the tank 51. In addition, the catholyte supply channel and the catholyte return channel are examples of the "catholyte circulation channel" that circulates the catholyte between the tank 51 and the cathode chamber 12 .

另外,步驟S20中,亦可藉由調溫器53a將陽極液之溫度調整在指定的溫度範圍內。同樣地,亦可藉由調溫器53b將陰極液調整在指定的溫度範圍內。此等溫度範圍之具體值並非特別限定者,不過舉出一例時,可使用30℃以上,70℃以下之範圍,更具體而言,可使用40℃以上,60℃以下之範圍。In addition, in step S20, the temperature of the anolyte can also be adjusted within a specified temperature range by the thermostat 53a. Similarly, the catholyte can also be adjusted within a specified temperature range by the thermostat 53b. Specific values of these temperature ranges are not particularly limited, but as an example, a range of 30°C to 70°C can be used, more specifically, a range of 40°C to 60°C can be used.

採用本實施形態時,由於各個鍍覆模組400備有複數個鍍覆槽10,且各個鍍覆模組400中形成陽極液在複數個鍍覆槽10之陽極室11與槽50之間循環,而陰極液在複數個鍍覆槽10之陰極室12與槽51之間循環的構成,因此1個鍍覆模組400中之陽極液及陰極液的循環,係與其他鍍覆模組400中之陽極液及陰極液的循環獨立地進行。藉此,可與其他鍍覆模組400獨立地進行一部分鍍覆模組400之維護。具體而言,例如可在其他鍍覆模組400中執行對基板Wf之鍍覆處理中,進行一部分鍍覆模組400的維護。When adopting this embodiment, since each coating module 400 is equipped with a plurality of coating tanks 10, and in each coating module 400, anolyte is formed to circulate between the anode chamber 11 and the tank 50 of the plurality of coating tanks 10 , and the catholyte circulates between the cathode chamber 12 and the tank 51 of a plurality of plating tanks 10, so the circulation of the anolyte and catholyte in one plating module 400 is the same as that of other plating modules 400 The circulation of the anolyte and catholyte is carried out independently. Thereby, maintenance of a part of the plating module 400 can be performed independently from other plating modules 400 . Specifically, for example, maintenance of a part of the plating module 400 may be performed while the plating process on the substrate Wf is performed in another plating module 400 .

另外,在步驟S20執行中,亦可藉由調整閥門75f、75g、75h、75i,來調整#1~#4之鍍覆槽10的陽極室11之壓力。舉出其一例時,例如亦可以將#1~#4之鍍覆槽10的陽極室11之壓力分別形成與#1~#4之鍍覆槽10的陰極室12之壓力相同值的方式,來調整閥門75f、75g、75h、75i。In addition, during the execution of step S20, the pressures of the anode chambers 11 of the coating tanks 10 of #1 to #4 can also be adjusted by adjusting the valves 75f, 75g, 75h, and 75i. When giving an example, for example, the pressures of the anode chambers 11 of the coating tanks 10 of #1 to #4 can be formed to be the same as the pressures of the cathode chambers 12 of the coating tanks 10 of #1 to #4, respectively, to adjust valves 75f, 75g, 75h, 75i.

具體而言,例如藉由使閥門75f之閥門開度減少,而使通過閥門75f之陽極液的流量減少,可使#1之鍍覆槽10的陽極室11之壓力上升。另外,藉由使閥門75f之閥門開度增加而使通過閥門75f之陽極液的流量增加,可使#1之鍍覆槽10的陽極室11之壓力降低。如此,藉由在0%~100%之範圍內調整閥門75f之閥門開度,可調整#1之鍍覆槽10的陽極室11之壓力。藉此,可將#1之鍍覆槽10的陽極室11之壓力形成與陰極室12之壓力相同值。Specifically, for example, by reducing the valve opening of the valve 75f, the flow rate of the anolyte passing through the valve 75f is reduced, and the pressure of the anode chamber 11 of the #1 coating tank 10 can be increased. In addition, by increasing the valve opening degree of the valve 75f, the flow rate of the anolyte passing through the valve 75f is increased, so that the pressure of the anode chamber 11 of the coating tank 10 of #1 can be reduced. Thus, by adjusting the valve opening of the valve 75f within the range of 0% to 100%, the pressure of the anode chamber 11 of the #1 coating tank 10 can be adjusted. Thereby, the pressure of the anode chamber 11 and the pressure of the cathode chamber 12 of the coating tank 10 of #1 can be set to the same value.

同樣地,藉由調整閥門75g之閥門開度,來調整#2之鍍覆槽10的陽極室11之壓力,可將該陽極室11之壓力形成與陰極室12的壓力相同值。此外,藉由調整閥門75h之閥門開度,來調整#3之鍍覆槽10的陽極室11之壓力,可將該陽極室11之壓力形成與陰極室12的壓力相同值。此外,藉由調整閥門75i之閥門開度,來調整#4之鍍覆槽10的陽極室11之壓力,可將該陽極室11之壓力形成與陰極室12的壓力相同值。Similarly, by adjusting the valve opening of the valve 75g to adjust the pressure of the anode chamber 11 of the coating tank 10 of #2, the pressure of the anode chamber 11 can be formed to be the same as the pressure of the cathode chamber 12. In addition, by adjusting the valve opening of the valve 75h to adjust the pressure of the anode chamber 11 of the coating tank 10 of #3, the pressure of the anode chamber 11 can be made to be the same as the pressure of the cathode chamber 12. In addition, by adjusting the valve opening of the valve 75i to adjust the pressure of the anode chamber 11 of the #4 coating tank 10, the pressure of the anode chamber 11 can be made to be the same as the pressure of the cathode chamber 12.

另外,#1~#4之鍍覆槽10的陽極室11之壓力例如可依據壓力計80a之檢測結果而取得。此外,#1~#4之鍍覆槽10的陰極室12之壓力例如可依據壓力計80b之檢測結果而取得。 <<藥液準備處理>> In addition, the pressures of the anode chambers 11 of the coating tanks 10 of #1 to #4 can be obtained based on the detection results of the pressure gauge 80a, for example. In addition, the pressures of the cathode chambers 12 of the coating tanks 10 of #1 to #4 can be obtained, for example, according to the detection results of the pressure gauge 80b. <<Preparation and treatment of liquid medicine>>

繼續,說明圖5之步驟S10的藥液準備處理。步驟S10係在對基板Wf執行鍍覆處理之前執行。具體而言,本實施形態之步驟S10係在步驟S20之前執行。圖6係用於詳細說明藥液準備處理之流程圖。 (陽極液、陰極液回收步驟(步驟S10a)) Next, the liquid medicine preparation process in step S10 in FIG. 5 will be described. Step S10 is performed before the plating process is performed on the substrate Wf. Specifically, step S10 of this embodiment is executed before step S20. Fig. 6 is a flow chart for explaining the liquid medicine preparation process in detail. (Anolyte and catholyte recovery step (step S10a))

在藥液準備處理中,首先,執行將殘留於複數個鍍覆槽10之陽極室11的陽極液返回連通於陽極室11之槽50的「陽極液回收步驟」。此外,執行將殘留於複數個鍍覆槽10之陰極室12的陰極液返回連通於陰極室12之槽51的「陰極液回收步驟」。In the chemical solution preparation process, first, the "anolyte recovery step" of returning the anolyte remaining in the anode chambers 11 of the plurality of plating tanks 10 to the tank 50 connected to the anode chambers 11 is performed. In addition, the "catholyte recovery step" of returning the catholyte remaining in the cathode chambers 12 of the plurality of coating tanks 10 to the tank 51 connected to the cathode chambers 12 is performed.

具體而言,陽極液回收步驟中,在使泵浦52a停止之狀態下,藉由將閥門75f、75g、75h、75i形成開閥狀態,使各個陽極室11之陽極液在流路70b1、70b2、70b3、70b4中流通,而返回槽50(回收)。另外,此時,陽極室11之陽極液係利用重力返回槽50。Specifically, in the anolyte recovery step, the valves 75f, 75g, 75h, and 75i are opened to allow the anolyte in each anode chamber 11 to flow through the flow paths 70b1 and 70b2 while the pump 52a is stopped. , 70b3, 70b4 circulate, and return to the tank 50 (recovery). In addition, at this time, the anolyte in the anode chamber 11 returns to the tank 50 by gravity.

此外,陰極液回收步驟中,在使泵浦52b停止狀態下,藉由使流路70e1、70e2、70e3、70e4與陰極室12變成連通狀態之方式切換流路切換閥77a、77b、77c、77d,使各個陰極室12之陰極液在流路70e1、70e2、70e3、70e4中流通而返回槽51(回收)。另外,此時,陰極室12之陰極液係利用重力返回槽51。In addition, in the catholyte recovery step, the flow path switching valves 77a, 77b, 77c, and 77d are switched so that the flow paths 70e1, 70e2, 70e3, and 70e4 communicate with the cathode chamber 12 while the pump 52b is stopped. , the catholyte in each of the cathode chambers 12 is returned to the tank 51 through the flow paths 70e1, 70e2, 70e3, and 70e4 (recovery). In addition, at this time, the catholyte in the cathode chamber 12 returns to the tank 51 by gravity.

此外,本實施形態中,陽極液回收步驟亦可在殘留於陽極室11之陽極液低於陽極室11之容積的10%,並宜低於5%,更宜低於1%之前執行。同樣地,本實施形態中,陰極液回收步驟亦可在殘留於陰極室12之陰極液低於陰極室12之容積的10%,並宜低於5%,更宜低於1%之前執行。In addition, in this embodiment, the anolyte recovery step can also be performed before the anolyte remaining in the anode chamber 11 is less than 10%, preferably less than 5%, more preferably less than 1% of the volume of the anode chamber 11 . Similarly, in this embodiment, the catholyte recovery step can also be performed before the catholyte remaining in the cathode chamber 12 is less than 10% of the volume of the cathode chamber 12, preferably less than 5%, more preferably less than 1%.

具體而言,本實施形態中,陽極液回收步驟亦可在預設之指定時間內執行。該指定時間例如可預先進行實驗、模擬等來設定殘留於陽極室11之陽極液低於陽極室11之容積的10%,並宜低於5%,更宜低於1%之時間。Specifically, in this embodiment, the anolyte recovery step can also be performed within a preset specified time. The designated time can be pre-tested, simulated, etc. to set the time when the anolyte remaining in the anode chamber 11 is less than 10% of the volume of the anode chamber 11, preferably less than 5%, more preferably less than 1%.

同樣地,本實施形態中,陰極液回收步驟亦可在預設之指定時間內執行。該指定時間例如可預先進行實驗、模擬等來設定殘留於陰極室12之陰極液低於陰極室12之容積的10%,並宜低於5%,更宜低於1%之時間。 (陽極、陰極液面水平判定步驟(步驟S10b)) Similarly, in this embodiment, the catholyte recovery step can also be performed within a preset specified time. The specified time can be pre-tested, simulated, etc. to set the time when the catholyte remaining in the cathode chamber 12 is less than 10% of the volume of the cathode chamber 12, preferably less than 5%, more preferably less than 1%. (Anode and cathode liquid level determination step (step S10b))

接著,亦可執行判定貯存於槽50之陽極液的液面水平是否超過預設之指定水平的「陽極液面水平判定步驟」;與判定貯存於槽51之陰極液的液面水平是否超過預設之指定水平的「陰極液面水平判定步驟」。另外,槽50之陽極液的液面水平例如可依據液面水平檢測器81a而取得。槽51之陰極液的液面水平例如可依據液面水平檢測器81b之檢測結果而取得。Then, it is also possible to execute the "anolyte level determination step" of judging whether the liquid level of the anolyte stored in the tank 50 exceeds a preset designated level; Set the "cathode liquid level determination step" of the specified level. In addition, the liquid level of the anolyte in the tank 50 can be obtained according to the liquid level detector 81a, for example. The liquid level of the catholyte in the tank 51 can be obtained, for example, according to the detection result of the liquid level detector 81b.

槽50之陽極液的「指定水平」之具體值並非特別限定者,不過,例如可使用以陽極液裝滿陽極室11,且陽極液可在槽50與陽極室11之間循環的最低限度之超過液面水平的值。The specific value of the "specified level" of the anolyte in the tank 50 is not particularly limited, but, for example, the minimum level at which the anolyte fills the anolyte chamber 11 and the anolyte can be circulated between the tank 50 and the anode chamber 11 can be used. Value above liquid level.

同樣地,槽51之陰極液的「指定水平」之具體值並非特別限定者,不過,例如可使用以陰極液裝滿陰極室12,且陰極液可在槽51與陰極室12之間循環的最低限度之超過液面水平的值。另外,判定槽50之陽極液的液面水平之基準值的「指定水平」、與判定槽51之陰極液的液面水平之基準值的「指定水平」亦可係相同值,亦可係不同值。 (陽極液、陰極液補充步驟(步驟S10c)) Similarly, the specific value of the "designated level" of the catholyte in the tank 51 is not particularly limited, but, for example, a catholyte can be used to fill the cathode chamber 12 with catholyte, and the catholyte can circulate between the tank 51 and the cathode chamber 12. Minimum value above liquid level. In addition, the "designated level" of the reference value of the liquid level of the anolyte in the determination tank 50 and the "designated level" of the reference value of the liquid level of the catholyte in the determination tank 51 may be the same value or different. value. (anolyte and catholyte replenishment step (step S10c))

貯存於槽50之陽極液的液面水平未達指定水平情況下,宜以使貯存於槽50之陽極液的液面水平超過指定水平之方式,執行在槽50中補充陽極液之「陽極液補充步驟」。此外,貯存於槽51之陰極液的液面水平未達指定水平情況下,宜以使貯存於槽51之陰極液的液面水平超過指定水平之方式,執行在槽51中補充陰極液之「陰極液補充步驟」。When the liquid level of the anolyte stored in the tank 50 does not reach the specified level, it is preferable to execute the "anolyte solution" of replenishing the anolyte in the tank 50 in such a manner that the liquid level of the anolyte stored in the tank 50 exceeds the specified level. Supplementary steps". In addition, when the liquid level of the catholyte stored in the tank 51 does not reach the specified level, it is preferable to perform the "replenishment of the catholyte" in the tank 51 in such a manner that the liquid level of the catholyte stored in the tank 51 exceeds the specified level. Catholyte replenishment procedure".

具體而言,在前述步驟S10b之陽極液面水平判定步驟中,並非判定為貯存於槽50之陽極液的液面水平超過指定水平時(陽極液之液面水平未達指定水平時),在步驟S10c之陽極液補充步驟中,從陽極液供給裝置57a供給陽極液,並且將閥門75l形成開閥狀態。藉此,從陽極液供給裝置57a供給之陽極液在流路70g1中流通而補充至槽50。該處理係執行至貯存於槽50之陽極液的液面水平超過指定水平。Specifically, in the step of determining the level of the anolyte in the aforementioned step S10b, if it is not determined that the level of the anolyte stored in the tank 50 exceeds the specified level (when the level of the anolyte does not reach the specified level), the In the anolyte replenishment step of step S10c, the anolyte is supplied from the anolyte supply device 57a, and the valve 75l is opened. Thereby, the anolyte supplied from the anolyte supply device 57 a flows through the flow path 70 g 1 to replenish the tank 50 . This treatment is performed until the liquid level of the anolyte stored in the tank 50 exceeds a specified level.

同樣地,在前述步驟S10b之陰極液面水平判定步驟中,並非判定為貯存於槽51之陰極液的液面水平超過指定水平時(陰極液之液面水平未達指定水平時),在步驟S10c之陰極液補充步驟中,從陰極液供給裝置57b供給陰極液,並且將閥門75m形成開閥狀態。藉此,從陰極液供給裝置57b供給之陰極液在流路70g2中流通而補充至槽51。該處理係執行至貯存於槽51之陰極液的液面水平超過指定水平。 (陰極旁路循環步驟(步驟S10d)) Similarly, in the step of determining the catholyte level in the aforementioned step S10b, if it is not determined that the level of the catholyte stored in the tank 51 exceeds the specified level (when the level of the catholyte does not reach the specified level), in the step In the catholyte replenishment step of S10c, the catholyte is supplied from the catholyte supply device 57b, and the valve 75m is opened. Thereby, the catholyte supplied from the catholyte supply device 57 b flows through the flow path 70 g 2 to replenish the tank 51 . This process is performed until the liquid level of the catholyte stored in the tank 51 exceeds a specified level. (cathode bypass cycle step (step S10d))

步驟S10b之判定結果,貯存於槽51之陰極液的液面水平超過指定水平時,宜執行使貯存於槽51之陰極液旁路流通於陰極室12後返回槽51的「陰極旁路循環步驟」。另外,本實施形態之步驟S10d至少在後述的步驟S10f之前執行(圖6中,進一步在後述的步驟S10e之前執行)。As a result of the judgment of step S10b, when the liquid level of the catholyte stored in the tank 51 exceeds the specified level, it is advisable to execute the "cathode bypass cycle step" that makes the catholyte stored in the tank 51 bypass the cathode chamber 12 and then return to the tank 51. ". In addition, step S10d of this embodiment is performed at least before step S10f mentioned later (in FIG. 6, it is further executed before step S10e mentioned later).

具體而言,在步驟S10d中,使泵浦52b運轉,並且將閥門75j形成開閥狀態,將其他閥門形成關閥狀態,且以流路70c1、70c2、70c3、70c4與流路70e1、70e2、70e3、70e4連通之方式切換流路切換閥77a、77b、77c、77d。Specifically, in step S10d, the pump 52b is operated, the valve 75j is opened, the other valves are closed, and the flow paths 70c1, 70c2, 70c3, 70c4 are connected to the flow paths 70e1, 70e2, 70e3, 70e4 are connected to each other to switch flow path switching valves 77a, 77b, 77c, 77d.

藉此,貯存於槽51之陰極液在流路70c中流通,繼續在調溫器53b、過濾器54中流通。而後,在該過濾器54中流通之陰極液於在流路70c1、70c2、70c3、70c4中流通後,繼續在流路70e1、70e2、70e3、70e4中流通(亦即,旁通於陰極室12)並返回槽51。另外,本實施形態之步驟S10d係在預設之指定時間執行。Thereby, the catholyte stored in the tank 51 flows through the flow path 70c, and continues to flow through the thermostat 53b and the filter 54. Then, after the catholyte circulating in the filter 54 circulates in the flow paths 70c1, 70c2, 70c3, 70c4, it continues to flow in the flow paths 70e1, 70e2, 70e3, 70e4 (that is, bypasses the cathode chamber 12 ) and return to slot 51. In addition, step S10d of this embodiment is executed at a preset designated time.

另外,流路70c、70c1、70c2、70c3、70c4、70e1、70e2、70e3、70e4係用於使貯存於槽51之陰極液旁路流通於陰極室12後返回槽51的「陰極液旁路流路」之一例。In addition, the flow paths 70c, 70c1, 70c2, 70c3, 70c4, 70e1, 70e2, 70e3, and 70e4 are used to make the catholyte stored in the tank 51 bypass flow through the cathode chamber 12 and then return to the tank 51. Road" example.

此外,步驟S10d中,調溫器53b亦可在指定之溫度範圍內調整在流路中流通之陰極液的溫度。該溫度範圍之具體值並非特別限定者,不過舉出一例時,可使用30℃以上,70℃以下之範圍,更具體而言,可使用40℃以上,60℃以下之範圍。In addition, in step S10d, the thermostat 53b can also adjust the temperature of the catholyte circulating in the flow path within a specified temperature range. The specific value of the temperature range is not particularly limited, but as an example, a range of 30°C to 70°C can be used, more specifically, a range of 40°C to 60°C can be used.

採用本實施形態時,在步驟S10d之陰極旁路循環步驟中,於陰極液流通期間,可使陰極液中所含之氣泡量減少。藉此,在其後進行之後述步驟S10f的陰極液在槽51與陰極室12之間循環時,可使供給至陰極室12之陰極液中所含的氣泡量減少。藉此,例如可抑制大量氣泡附著於離子抵抗體14。 (陽極液循環步驟(步驟S10e)) When this embodiment is adopted, in the cathode bypass circulation step of step S10d, the amount of air bubbles contained in the catholyte can be reduced during the circulation of the catholyte. Thereby, when the catholyte in step S10f described later circulates between the tank 51 and the cathode chamber 12, the amount of air bubbles contained in the catholyte supplied to the cathode chamber 12 can be reduced. Thereby, for example, a large number of air bubbles can be suppressed from adhering to the ion resister 14 . (Anolyte circulation step (step S10e))

接著,在步驟S10e中,執行使陽極液在槽50與陽極室11之間循環的「陽極液循環步驟」。藉此,可以陽極液裝滿陽極室11。Next, in step S10e, an "anolyte circulation step" in which the anolyte is circulated between the tank 50 and the anode chamber 11 is performed. Thereby, the anode chamber 11 can be filled with anolyte.

具體而言,在步驟S10e中,使泵浦52a運轉,並且將閥門75a、75b、75c、75d、75e、75f、75g、75h、75i形成開閥狀態,並將其他閥門形成關閥狀態。藉此,槽50之陽極液在流路70a中流通,並在調溫器53a中流通後,繼續在流路70a1、70a2、70a3、70a4中流通而流入各個陽極室11。在陽極室11中流通之陽極液在流路70b1、70b2、70b3、70b4中流通而返回槽50。Specifically, in step S10e, the pump 52a is operated, the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h, and 75i are opened, and the other valves are closed. Thereby, the anolyte in the tank 50 flows through the flow path 70a, flows through the thermostat 53a, and then flows through the flow paths 70a1, 70a2, 70a3, and 70a4 to flow into each anode chamber 11. The anolyte flowing through the anode chamber 11 flows through the flow paths 70b1 , 70b2 , 70b3 , and 70b4 and returns to the tank 50 .

此外,步驟S10e至少在步驟S10a結束後執行。具體而言,本實施形態之步驟S10e係在步驟S10a結束後,且在步驟S10b中,判定為貯存於槽50之陽極液的液面水平超過指定水平時執行,更具體而言,進一步在步驟S10d結束後執行。In addition, step S10e is performed at least after step S10a is completed. Specifically, step S10e of this embodiment is executed after step S10a ends, and when it is determined in step S10b that the liquid level of the anolyte stored in tank 50 exceeds a specified level, more specifically, further in step S10b Executed after S10d ends.

在步驟S10e中,調溫器53a亦可將從槽50朝向陽極室11流通之陽極液的溫度調整在指定的溫度範圍內。該溫度範圍之具體值並非特別限定者,不過舉出一例時,可使用30℃以上,70℃以下之範圍,更具體而言,可使用40℃以上,60℃以下之範圍。採用該構成時,可早期將從槽50朝向陽極室11流通之陽極液的溫度保持在指定的溫度範圍內。 (陰極液循環步驟(步驟S10f)) In step S10e, the temperature regulator 53a can also adjust the temperature of the anolyte flowing from the tank 50 toward the anode chamber 11 within a specified temperature range. The specific value of the temperature range is not particularly limited, but as an example, a range of 30°C to 70°C can be used, more specifically, a range of 40°C to 60°C can be used. With this configuration, the temperature of the anolyte flowing from the tank 50 toward the anode chamber 11 can be kept within a predetermined temperature range at an early stage. (Cathholyte circulation step (step S10f))

步驟S10a結束後(將殘留於陰極室12之陰極液返回槽51後),且在開始進行步驟S10e之陽極液循環步驟後,在步驟S10f中執行使陰極液在槽51與陰極室12之間循環的「陰極液循環步驟」。藉此,可以陰極液裝滿陰極室12。After step S10a ends (after the catholyte remaining in the cathode chamber 12 is returned to the tank 51), and after the anolyte circulation step of step S10e is started, the catholyte is carried out between the tank 51 and the cathode chamber 12 in step S10f The "catholyte circulation step" of the cycle. Thereby, the cathode chamber 12 can be filled with catholyte.

具體而言,在步驟S10f中,使泵浦52b運轉,並且控制閥門75j為開閥狀態,其他閥門形成關閥狀態,並以在流路70c1、70c2、70c3、70c4中流通之陰極液流入陰極室12之方式切換流路切換閥77a、77b、77c、77d。Specifically, in step S10f, the pump 52b is operated, and the control valve 75j is in the open state, and the other valves are in the closed state, and the catholyte flowing in the flow paths 70c1, 70c2, 70c3, and 70c4 flows into the cathode. The mode of the chamber 12 is switched by the flow path switching valves 77a, 77b, 77c, and 77d.

藉此,貯存於槽51之陰極液在流路70c中流通,繼續在調溫器53b及過濾器54中流通。流經該過濾器54之陰極液繼續流經流路70c1、70c2、70c3、70c4後,流入各個陰極室12。流經陰極室12之陰極液(具體而言,係從陰極室12溢流而流入溢流槽19之陰極液)在流路70d1、70d2、70d3、70d4中流通並返回槽51。Thereby, the catholyte stored in the tank 51 flows through the flow path 70c, and continues to flow through the thermostat 53b and the filter 54. The catholyte flowing through the filter 54 continues to flow through the flow paths 70c1, 70c2, 70c3, 70c4, and then flows into each cathode chamber 12. The catholyte flowing through the cathode chamber 12 (specifically, the catholyte overflowing from the cathode chamber 12 and flowing into the overflow tank 19 ) circulates through the flow paths 70d1 , 70d2 , 70d3 , and 70d4 and returns to the tank 51 .

在步驟S10f中,調溫器53b亦可將從槽51朝向陰極室12流通之陰極液的溫度調整成指定之溫度範圍內。該溫度範圍之具體值並非特別限定者,不過舉出一例時,可使用30℃以上,70℃以下之範圍,更具體而言,可使用40℃以上,60℃以下之範圍。採用該構成時,可早期將從槽51朝向陰極室12流通之陰極液的溫度保持在指定的溫度範圍內。In step S10f, the thermostat 53b may also adjust the temperature of the catholyte flowing from the tank 51 toward the cathode chamber 12 to be within a specified temperature range. The specific value of the temperature range is not particularly limited, but as an example, a range of 30°C to 70°C can be used, more specifically, a range of 40°C to 60°C can be used. With this configuration, the temperature of the catholyte flowing from the tank 51 toward the cathode chamber 12 can be kept within a predetermined temperature range at an early stage.

此外,步驟S10f亦可在開始步驟S10e之後開始,例如,亦可在步驟S10f執行中繼續執行步驟S10e。換言之,開始步驟S10e之陽極液循環步驟,在執行該陽極液循環步驟期間,開始執行步驟S10f之陰極液循環步驟,然後,亦可一起執行陽極液循環步驟與陰極液循環步驟。In addition, step S10f may also be started after starting step S10e, for example, step S10e may also be continued during execution of step S10f. In other words, the anolyte circulation step of step S10e is started, and the catholyte circulation step of step S10f is started during the execution of the anolyte circulation step, and then the anolyte circulation step and the catholyte circulation step can also be performed together.

此外,步驟S10f宜在開始步驟S10e之後,且以陽極液裝滿陽極室11之後開始。具體而言,此時,例如亦可在開始步驟S10e後經過預設之指定時間後開始步驟S10f。該指定時間例如預先求出以陽極液裝滿陽極室11的足夠時間,可使用如此求出之時間。In addition, step S10f is preferably started after step S10e is started and after the anode chamber 11 is filled with anolyte. Specifically, at this time, for example, step S10f may be started after a preset specified time elapses after starting step S10e. The specified time is, for example, determined in advance for a sufficient time to fill the anode chamber 11 with the anolyte, and the time thus determined can be used.

另外,例如亦可在執行步驟S10f中,於槽51中補充鍍覆添加劑(此稱為「添加劑補充步驟」)。具體而言,在該添加劑補充步驟中,使添加劑供給裝置57c開始供給鍍覆添加劑,並且控制閥門75n為開閥狀態。藉此,從添加劑供給裝置57c供給之鍍覆添加劑在流路70g3中流通而補充至槽51。In addition, for example, in step S10f, the plating additive may be replenished in the tank 51 (this is referred to as “additive replenishing step”). Specifically, in this additive replenishment step, the additive supply device 57c is started to supply the plating additive, and the control valve 75n is opened. Thereby, the plating additive supplied from the additive supply device 57c flows through the flow path 70g3 and replenishes the tank 51 .

此外,例如亦可在執行步驟S10f中,除了上述的添加劑補充步驟之外,或是取代添加劑補充步驟,而在槽51中補充金屬離子(此稱為「金屬離子補充步驟」)。具體而言,在該金屬離子補充步驟中,使金屬離子供給裝置57d開始供給含有金屬離子之溶液,並且控制閥門75o為開閥狀態。藉此,從金屬離子供給裝置57d供給之含有金屬離子的溶液在流路70g4中流通而補充至槽51。In addition, for example, in performing step S10f, metal ions may be added to the tank 51 in addition to or instead of the additive replenishing step described above (this is referred to as “metal ion replenishing step”). Specifically, in this metal ion replenishment step, the metal ion supply device 57d is started to supply a solution containing metal ions, and the control valve 75o is opened. Thereby, the solution containing metal ions supplied from the metal ion supply device 57 d flows through the flow path 70 g 4 to replenish the tank 51 .

採用如以上說明之本實施形態時,在步驟S10之藥液準備處理中,由於陽極液在槽50與陽極室11之間循環(陽極液循環步驟),比陰極液在槽51與陰極室12之間循環(陰極液循環步驟)先開始,因此可使陽極室11之壓力上升比陰極室12的壓力上升先開始。藉此,例如與陰極液循環步驟比陽極液循環步驟先開始,陰極室12之壓力上升比陽極室11的壓力上升先開始時比較,可抑制配置於鍍覆槽10內部之膜40藉由陰極室12之壓力而向下方變形。When adopting the present embodiment as described above, in the chemical solution preparation process of step S10, since the anolyte circulates between the tank 50 and the anode chamber 11 (the anolyte circulation step), compared with the catholyte in the tank 51 and the cathode chamber 12 The intermediate circulation (catholyte circulation step) starts first, so that the pressure rise of the anode chamber 11 can be started earlier than the pressure rise of the cathode chamber 12. Thereby, for example, compared with the case where the catholyte circulation step starts earlier than the anolyte circulation step, and the pressure rise of the cathode chamber 12 starts earlier than the pressure rise of the anode chamber 11, the film 40 disposed inside the coating tank 10 can be suppressed from passing through the cathode chamber 11. The pressure of the chamber 12 deforms downward.

以上,詳述了本發明之實施形態,不過本發明並非限定於該特定之實施形態者,在申請專利範圍記載之本發明的範圍內可進一步作各種修改、變更。The embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the present invention described in the claims.

10:鍍覆槽 10a:底壁 10b:外周壁 11:陽極室 12:陰極室 13:陽極 14:離子抵抗體 15:貫穿孔 16a:陽極室用供給口 16b:陽極室用排出口 17:供給‧排放口 18:溢流槽用排出口 19:溢流槽 20:基板固持器 22:旋轉機構 24:升降機構 26:支柱 40:膜 41:傾斜部位 50,51:槽 52a,52b:泵浦 53a,53b:調溫器 54:過濾器 57a:陽極液供給裝置 57b:陰極液供給裝置 57c:添加劑供給裝置 57d:金屬離子供給裝置 70a~70g4:流路 75a~75o:閥門 77a,77b,77c,77d:流路切換閥 70a1~70a4,70b1~70b4,70c1~70c4,70d1~70d4,70e1~70e4:流路 80a,80b:壓力計 801:處理器 802:記憶裝置 81a,81b:液面水平檢測器 400:鍍覆模組 1000:鍍覆裝置 Ps:鍍覆液(陽極液、陰極液) Wf:基板10: Plating tank 10a: bottom wall 10b: peripheral wall 11: Anode chamber 12: Cathode chamber 13: anode 14: ion resister 15: Through hole 16a: Supply port for anode chamber 16b: Discharge port for anode chamber 17: Supply‧discharge port 18: Outlet for overflow tank 19: overflow tank 20: Substrate holder 22: Rotary mechanism 24: Lifting mechanism 26: Pillar 40: Membrane 41: Inclined part 50,51: slot 52a, 52b: pump 53a, 53b: thermostat 54: filter 57a: Anolyte supply device 57b: Catholyte supply device 57c: Additive supply device 57d: Metal ion supply device 70a~70g4: flow path 75a~75o: valve 77a, 77b, 77c, 77d: flow switching valve 70a1~70a4, 70b1~70b4, 70c1~70c4, 70d1~70d4, 70e1~70e4: flow path 80a, 80b: pressure gauge 801: Processor 802: memory device 81a, 81b: liquid level detector 400: Plating module 1000: Plating device Ps: Plating solution (anolyte, catholyte) Wf: Substrate

圖1係顯示本案實施形態之鍍覆裝置的整體構成之立體圖。 圖2係顯示本案實施形態之鍍覆裝置的整體構成之俯視圖。 圖3係模式顯示本案實施形態之鍍覆模組的1個鍍覆槽之周邊構成圖。 圖4係顯示本案實施形態之1個鍍覆模組的液體流通構成之模式圖。 圖5係用於說明本案實施形態之鍍覆模組中液體的流通樣態之一例流程圖。 圖6係用於詳細說明本案實施形態之藥液準備處理的流程圖。 Fig. 1 is a perspective view showing the overall structure of a coating device in the embodiment of the present case. Fig. 2 is a plan view showing the overall structure of the coating device in the embodiment of the present case. Fig. 3 is a schematic diagram showing the surrounding composition of one plating tank of the plating module of the embodiment of the present case. Fig. 4 is a schematic diagram showing the liquid circulation structure of a coating module in the embodiment of the present case. Fig. 5 is a flow chart illustrating an example of the circulation state of the liquid in the coating module of the embodiment of the present invention. Fig. 6 is a flow chart for explaining the liquid medicine preparation process of the embodiment of the present invention in detail.

Claims (7)

一種鍍覆裝置之維護方法,係包含: 讓殘留於在鍍覆槽內部劃分成比膜下方之陽極室的陽極液,返回用於貯存陽極液之陽極液槽; 讓殘留於在前述鍍覆槽內部劃分成比前述膜上方之陰極室的陰極液,返回用於貯存陰極液之陰極液槽; 讓殘留於前述陽極室之陽極液返回前述陽極液槽後,使陽極液在前述陽極液槽與前述陽極室之間循環;及 讓殘留於前述陰極室之陰極液返回前述陰極液槽後,並在陽極液開始在前述陽極液槽與前述陽極室之間循環後,使陰極液在前述陰極液槽與前述陰極室之間循環。 A maintenance method for a plating device, comprising: Return the anolyte remaining in the anolyte chamber which is divided into the anode chamber below the membrane inside the plating tank to the anolyte tank for storing the anolyte; Let the catholyte remaining in the catholyte compartment divided into the above-mentioned film above the coating tank be returned to the catholyte tank for storing the catholyte; After the anolyte remaining in the anode chamber is returned to the anolyte tank, the anolyte is circulated between the anolyte tank and the anode chamber; and After the catholyte remaining in the cathode chamber is returned to the catholyte chamber, and after the anolyte begins to circulate between the anolyte chamber and the anode chamber, the catholyte is circulated between the catholyte chamber and the cathode chamber . 如請求項1的鍍覆裝置之維護方法,其中進一步包含: 當貯存於前述陽極液槽之陽極液的液面水平未達預設之指定水平時,以貯存於前述陽極液槽之陽極液的液面水平超過該指定水平之方式,將從陽極液供給裝置所供給之陽極液補充至前述陽極液槽。The maintenance method of the plating device as claimed in claim 1, which further includes: when the liquid level of the anolyte stored in the anolyte tank does not reach the preset specified level, using the anolyte stored in the anolyte tank When the liquid level exceeds the specified level, the anolyte supplied from the anolyte supply device is replenished to the anolyte tank. 如請求項2的鍍覆裝置之維護方法,其中使陽極液在前述陽極液槽與前述陽極室之間循環,係在殘留於前述陽極室之陽極液返回前述陽極液槽之後,且貯存於前述陽極液槽之陽極液的液面水平超過前述指定水平時執行。The maintenance method of a plating device as claimed in claim 2, wherein the anolyte is circulated between the aforementioned anolyte tank and the aforementioned anode chamber, after the anolyte remaining in the aforementioned anolyte chamber returns to the aforementioned anolyte tank, and is stored in the aforementioned Executed when the liquid level of the anolyte in the anolyte tank exceeds the aforementioned specified level. 如請求項1的鍍覆裝置之維護方法,其中進一步包含: 當貯存於前述陰極液槽之陰極液的液面水平未達預設之指定水平時,以貯存於前述陰極液槽之陰極液的液面水平超過該指定水平之方式,將從陰極液供給裝置所供給之陰極液補充至前述陰極液槽。The maintenance method of the coating device as claimed in item 1, which further includes: when the liquid level of the catholyte stored in the catholyte tank does not reach the preset specified level, using the catholyte stored in the catholyte tank When the liquid level exceeds the predetermined level, the catholyte supplied from the catholyte supply device is replenished to the catholyte tank. 如請求項4的鍍覆裝置之維護方法,其中進一步包含: 當貯存於前述陰極液槽之陰極液的液面水平超過前述指定水平時,在使陰極液在前述陰極液槽與前述陰極室之間循環之前,使貯存於前述陰極液槽之陰極液旁路流通前述陰極室後,返回前述陰極液槽。The maintenance method of the plating device as claimed in claim 4, which further includes: when the liquid level of the catholyte stored in the aforementioned catholyte tank exceeds the aforementioned specified level, making the catholyte between the aforementioned catholyte tank and the aforementioned cathode chamber Before inter-circulation, the catholyte stored in the catholyte tank bypasses the cathode chamber and then returns to the catholyte tank. 如請求項1的鍍覆裝置之維護方法,其中包含: 使陽極液在前述陽極液槽與前述陽極室之間循環時,藉由調溫器將從前述陽極液槽朝向前述陽極室流通之陽極液的溫度調整至指定的溫度範圍內。The maintenance method of the plating device as claimed in claim 1, which includes: when the anolyte is circulated between the aforementioned anolyte tank and the aforementioned anode chamber, the anode that flows from the aforementioned anolyte tank toward the aforementioned anode chamber is transferred by a thermostat Adjust the temperature of the liquid to within the specified temperature range. 如請求項1的鍍覆裝置之維護方法,其中包含: 使陰極液在前述陰極液槽與前述陰極室之間循環時,藉由調溫器將從前述陰極液槽朝向前述陰極室而流通之陰極液的溫度調整至指定之溫度範圍內。The maintenance method of the coating device as claimed in claim 1, which includes: when the catholyte is circulated between the aforementioned catholyte tank and the aforementioned cathode chamber, the thermostat will flow from the aforementioned catholyte tank towards the aforementioned cathode chamber The temperature of the catholyte is adjusted to the specified temperature range.
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