TWI787598B - Method of manufacturing ordered arrangement of graphene-carbon nano tube of metal substrate and composite coatings for carbon deposit - Google Patents

Method of manufacturing ordered arrangement of graphene-carbon nano tube of metal substrate and composite coatings for carbon deposit Download PDF

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TWI787598B
TWI787598B TW109112496A TW109112496A TWI787598B TW I787598 B TWI787598 B TW I787598B TW 109112496 A TW109112496 A TW 109112496A TW 109112496 A TW109112496 A TW 109112496A TW I787598 B TWI787598 B TW I787598B
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sputtering target
metal substrate
carbon
vacuum
manufacturing
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TW202138297A (en
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簡士堡
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信紘科技股份有限公司
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Abstract

The invention discloses a method of manufacturing ordered arrangement of graphene-carbon nano tube of metal substrate and composite coatings for carbon deposit, which deposits sputtering target and penetrating fluid into evacuated penetrating oven in order to make the penetrating fluid penetrates the sputtering target in the evacuated penetrating oven, and places the penetrated sputtering target into evacuated magnetic control sputtering target machine and controls cooling water of the evacuated magnetic control sputtering target machine, namely, operates evacuated magnetic control sputtering process on the metal substrate, utilizes the characteristic of metal organic salt of the penetrating fluid that can remain non-magnetic under 150℃ before decomposition, decomposes nano metal organic salt particles in high temperature zone after being sputtering and depositing on the metal substrate as catalyst of carbon so the carbon that came from the sputtering target can form carbon structural layer on concave / convex rough portion of the metal substrate. Accordingly, the invention reflects the beneficial effects of being easy and time saving on manufacture.

Description

金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法 Fabrication method of ordered arrangement of graphene carbon nanotubes on metal substrate and carbon deposition composite coating

本發明係有關於一種金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,尤其是指一種於製作上更為簡易便利,且更能節省製作工時,而在其整體施行使用上更增實用功效特性者。 The present invention relates to a manufacturing method for the ordered arrangement of graphene carbon nanotubes on a metal substrate and a carbon deposition composite coating, in particular to a method that is simpler and more convenient to manufacture, and can save man-hours. Those who have more practical and functional characteristics in its overall implementation and use.

按,隨著高科技的蓬勃發展,電子元件的體積趨於微小化,而且單位面積上的密集度也愈來愈高,其效能更是不斷增強,在這些因素之下,電子元件的產品品質需求幾乎逐年升高。 Press, with the vigorous development of high technology, the volume of electronic components tends to be miniaturized, and the density per unit area is getting higher and higher, and its performance is continuously enhanced. Under these factors, the product quality of electronic components The demand is increasing almost every year.

其中,就一般常見電子元件之金屬基材而言,其於製作加工過程中主要係將金屬基材於侵蝕槽內利用化學藥劑〔如:強酸、強鹼〕清洗表面以除油、除銹,且再經中和槽與清洗槽洗除藥劑後, 並經多數個化學槽,利用化學方式侵蝕、腐蝕將鋁箔表面加工形成多數凹孔狀的表面,再經中和清洗及強酸與電化學作用形成耐電壓的氧化層的氧化槽後,最後通過清洗中和槽與烘乾槽而完成該金屬基材的製作程序。 Among them, as far as the metal substrates of common electronic components are concerned, during the production process, the metal substrates are mainly cleaned with chemicals [such as: strong acid, strong alkali] in the erosion tank to remove oil and rust. And after the neutralization tank and the cleaning tank are washed to remove the agent, And through a number of chemical tanks, the surface of the aluminum foil is processed by chemical erosion and corrosion to form a surface with a large number of concave holes, and then after neutralization and cleaning, strong acid and electrochemical action to form an oxidation tank with a voltage-resistant oxide layer, and finally through cleaning The neutralization tank and the drying tank are used to complete the manufacturing procedure of the metal base material.

然而,上述金屬基材製作方法,其雖可達到製作完成該金屬基材之預期功效,但也在其實際施行操作過程中發現,該金屬基材於製作上需經過多個不同的槽、進行數不同的步驟,造成不僅顯得步驟極為繁雜不便,且相對需耗費較多的製作工時,致令其在整體施行操作上仍存在有改進之空間。 However, although the above metal substrate manufacturing method can achieve the expected effect of making the metal substrate, it is also found in the actual implementation process that the metal substrate needs to go through a number of different grooves for production. The number of different steps not only makes the steps extremely complicated and inconvenient, but also consumes more man-hours for production, so that there is still room for improvement in the overall implementation of the operation.

緣是,發明人有鑑於此,秉持多年該相關行業之豐富設計開發及實際製作經驗,再予以研究改良,提供一種金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,以期達到更佳實用價值性之目的者。 The reason is that, in view of this, the inventor has been adhering to years of rich experience in design, development and actual production in this related industry, and then researched and improved it to provide a composite coating of ordered arrangement of graphene carbon nanotubes and carbon deposition on a metal substrate Manufacturing methods, in order to achieve the purpose of better practical value.

本發明之主要目的在於提供一種金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其主要係於製作上更為簡易便利,且更能節省製作工時,而在其整體施行使用上更增實用功效特性者。 The main purpose of the present invention is to provide a manufacturing method for the ordered arrangement of graphene carbon nanotubes on metal substrates and carbon deposition composite coating, which is mainly easier and more convenient to manufacture, and can save more man-hours. And in its overall implementation and use, it has more practical and functional characteristics.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法之主要目的與功效,係由以下具體技術手段所達成: 其主要係包括下列步驟:A.石墨濺鍍靶材:將石墨製作成各種幾何型狀的磁控濺鍍靶材;B.滲透液:將有機金屬鹽溶解於有機容劑中,使其達到飽和溶解度,而製作出滲透液;C.滲透:將該濺鍍靶材與該滲透液一併置入真空滲透爐,讓該滲透液於真空滲透爐內之真空環境下滲透至該濺鍍靶材中;D.金屬基材:將金屬基材於雙面表面形成有凹凸粗糙部;E.濺鍍:將經過該滲透液滲透後之該濺鍍靶材置入真空磁控濺鍍靶機內,控制該真空磁控濺鍍靶機內之冷卻水,即可對經由D步驟處理之該金屬基材進行真空磁控濺鍍作業,利用該滲透液之有機金屬鹽在150℃以下未分解前仍保持為非磁性質,被濺射後至高溫區分解出奈米有機金屬鹽之金屬顆粒而沉積在該金屬基材上,作為碳素的催化劑,使得在來自該濺鍍靶材之碳快速相互鍵結,形成有序碳結構,即可在該金屬基材之凹凸粗糙部上形成有序的二維或三維碳結構層。 The main purpose and effect of the method for manufacturing the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention are achieved by the following specific technical means: Its main system includes the following steps: A. Graphite sputtering target material: making graphite into magnetron sputtering target material of various geometric shapes; B. Penetrating liquid: dissolving organic metal salt in organic solvent to make it reach Saturate the solubility, and make the permeate; C. Infiltration: Put the sputtering target and the permeate into the vacuum infiltration furnace together, let the permeate penetrate into the sputtering target under the vacuum environment in the vacuum infiltration furnace Middle; D. Metal substrate: The metal substrate is formed with concave-convex roughness on the double-sided surface; E. Sputtering: The sputtering target material penetrated by the penetrating liquid is placed in a vacuum magnetron sputtering target machine , by controlling the cooling water in the vacuum magnetron sputtering target machine, the vacuum magnetron sputtering operation can be performed on the metal substrate treated in step D, and the organometallic salt of the penetrant is used before it is decomposed below 150°C It still remains non-magnetic, and after being sputtered, the metal particles of nano-organic metal salt are decomposed in the high temperature region and deposited on the metal substrate, as a catalyst for carbon, so that the carbon from the sputtering target is quickly Bond with each other to form an ordered carbon structure, that is, an ordered two-dimensional or three-dimensional carbon structure layer can be formed on the concave-convex rough part of the metal substrate.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該濺鍍靶材之石墨含量≧99.95%,且孔隙率為15%~30%。 A preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the graphite content of the sputtering target is ≧99.95%, and the porosity is 15%. ~30%.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複 合塗層製造方法的較佳實施例,其中,該真空滲透爐設有爐體,該爐體內供設置該濺鍍靶材,且令該滲透液於該爐體內淹沒該濺鍍靶材,於該爐體設有真空閥與氣壓控制裝置相連結,利用該氣壓控制裝置之高真空泵可對該爐體內部進行抽真空作業,並於該爐體設有真空表,透過該真空表觀察該爐體內部的氣壓值。 The ordered arrangement and carbon deposition complex of graphene carbon nanotubes on the metal substrate of the present invention A preferred embodiment of the manufacturing method of composite coating, wherein, the vacuum infiltration furnace is provided with a furnace body, the furnace body is used for setting the sputtering target material, and the permeating liquid is made to submerge the sputtering target material in the furnace body, and then The furnace body is equipped with a vacuum valve connected to the air pressure control device. The high vacuum pump of the air pressure control device can be used to vacuumize the interior of the furnace body, and a vacuum gauge is installed on the furnace body. The furnace can be observed through the vacuum gauge. The air pressure inside the body.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該真空滲透爐之該爐體連接有滲透液回收槽,經由該滲透液回收槽回收使用後之滲透液供重覆循環使用。 In the preferred embodiment of the manufacturing method for the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, the furnace body of the vacuum infiltration furnace is connected with a permeate recovery tank, through the infiltration The liquid recovery tank recovers the used permeate for repeated recycling.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該金屬基材係為鋁含量≧99.7%之高純度鋁箔、銅含量99.7%之高純度銅箔任一種。 A preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the metal substrate is a high-purity aluminum foil with an aluminum content≧99.7%, and a copper content Any kind of 99.7% high-purity copper foil.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該金屬基材於雙面係經化學粗鍍、電化學腐蝕、噴塗、蒸濺鍍任一種方式在表面形成有凹凸粗糙部。 A preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the metal substrate is subjected to chemical rough plating, electrochemical corrosion, and spray coating on both sides. , Evaporation and sputtering forms a rough part on the surface.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該真空磁控濺鍍靶機為平面真空磁控濺鍍靶機、圓形平面真空磁控濺鍍靶機、圓柱形磁真空磁控濺鍍靶機任一種。 The preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the vacuum magnetron sputtering target machine is a planar vacuum magnetron sputtering target machine, Either circular planar vacuum magnetron sputtering target machine or cylindrical magnetic vacuum magnetron sputtering target machine.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複 合塗層製造方法的較佳實施例,其中,該濺鍍靶材的靶材面工作維持在至多150℃以下,同時該真空磁控濺鍍靶機之腔體內的工作溫度至少300℃以上、真空度在0.1Pa以下。 The ordered arrangement and carbon deposition complex of graphene carbon nanotubes on the metal substrate of the present invention A preferred embodiment of the method for manufacturing a composite coating, wherein the target surface of the sputtering target is maintained at a temperature below 150°C, and at the same time, the working temperature in the cavity of the vacuum magnetron sputtering target machine is at least 300°C, The vacuum degree is below 0.1Pa.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該有機金屬鹽係為鐵、鈷、鎳任一種。 A preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the organometallic salt is any one of iron, cobalt, and nickel.

本發明金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法的較佳實施例,其中,該金屬基材之凹凸粗糙部上所形成的該碳結構層係為碳奈米管、石墨烯任一種或兩種之組合。 A preferred embodiment of the manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating of the present invention, wherein the carbon structure layer formed on the concave-convex rough part of the metal substrate is Carbon nanotubes, graphene, or a combination of both.

1:濺鍍靶材 1: Sputtering target

2:滲透液 2: Penetrant

3:真空滲透爐 3: Vacuum infiltration furnace

31:爐體 31: furnace body

311:真空閥 311: vacuum valve

312:真空表 312: Vacuum gauge

32:氣壓控制裝置 32: Air pressure control device

33:滲透液回收槽 33: Permeate recovery tank

4:真空磁控濺鍍靶機 4: Vacuum magnetron sputtering target machine

5:金屬基材 5: Metal substrate

51:碳結構層 51: carbon structure layer

第一圖:本發明之製作流程示意圖 Figure 1: Schematic diagram of the production process of the present invention

第二圖:本發明之真空滲透爐結構示意圖 Figure 2: Schematic diagram of the structure of the vacuum infiltration furnace of the present invention

第三圖:本發明應用在平面真空磁控濺鍍靶機之使用狀態示意圖 Figure 3: Schematic diagram of the application of the present invention to a planar vacuum magnetron sputtering target machine

第四圖:本發明應用在圓形平面真空磁控濺鍍靶機之使用狀態示意圖 Figure 4: Schematic diagram of the application of the present invention to a circular planar vacuum magnetron sputtering target machine

第五圖:本發明應用在圓柱形磁真空磁控濺鍍靶機之使用狀態示意圖 Figure 5: Schematic diagram of the application of the present invention to a cylindrical magnetic vacuum magnetron sputtering target machine

第六圖:本發明於增強型非平衡閉合磁場進行真空磁控濺鍍作業狀態示意圖 Figure 6: Schematic diagram of the vacuum magnetron sputtering operation state of the present invention in an enhanced non-balanced closed magnetic field

第七圖:本發明於大型多靶非平衡閉合磁場進行真空磁控濺鍍作業狀態示意圖 Figure 7: Schematic diagram of the vacuum magnetron sputtering operation state of the present invention in a large multi-target non-balanced closed magnetic field

第八圖:本發明之另一進行真空磁控濺鍍作業狀態示意圖 Figure 8: Another schematic diagram of the vacuum magnetron sputtering operation state of the present invention

第九圖:本發明之又一進行真空磁控濺鍍作業狀態示意圖 Figure 9: Another schematic diagram of the vacuum magnetron sputtering operation state of the present invention

第十圖:本發明之成形狀態示意圖 Figure 10: Schematic diagram of the forming state of the present invention

第十一圖:本發明之另一成形狀態示意圖 Figure 11: Schematic diagram of another forming state of the present invention

第十二圖:本發明之又一成形狀態示意圖 Figure 12: Another schematic diagram of the forming state of the present invention

為令本發明所運用之技術內容、發明目的及其達成之功效有更完整且清楚的揭露,茲於下詳細說明之,並請一併參閱所揭之圖式及圖號:首先,請參閱第一圖本發明之製作流程示意圖所示,本發明主要係包括下列步驟:A.石墨濺鍍靶材:將石墨含量≧99.95%之高純度石墨製作成各種幾何型狀的磁控濺鍍靶材,且控制該濺鍍靶材之孔隙率為15%~30%;B.滲透液:將有機金屬鹽〔如:鐵、鈷、鎳等〕溶解於有機容劑中,使其達到飽和溶解度,而製作出滲透液;C.滲透:請再一併參閱第二圖本發明之真空滲透爐結構示意 圖所示,將該濺鍍靶材(1)與該滲透液(2)一併置入真空滲透爐(3),該真空滲透爐(3)設有爐體(31),該爐體(31)內供設置該濺鍍靶材(1),且令該滲透液(2)於該爐體(31)內淹沒該濺鍍靶材(1),於該爐體(31)設有真空閥(311)與氣壓控制裝置(32)相連結,利用該氣壓控制裝置(32)之高真空泵可對該爐體(31)內部進行抽真空作業,並於該爐體(31)設有真空表(312),以能透過該真空表(312)觀察該爐體(31)內部的氣壓值,而讓該滲透液(2)於該爐體(31)內之真空環境下滲透至該濺鍍靶材(1)中,另於該爐體(31)連接有滲透液回收槽(33),以可經由該滲透液回收槽(33)回收使用後之滲透液供重覆循環使用;D.金屬基材:將鋁含量≧99.7%之高純度鋁箔或銅含量99.7%之高純度銅箔等金屬基材,於雙面經化學粗鍍或電化學腐蝕或噴塗或蒸濺鍍,以在該金屬基材表面形成有凹凸粗糙部;E.濺鍍:將經過該滲透液(2)滲透後之該濺鍍靶材(1)置入真空磁控濺鍍靶機(4)內,該真空磁控濺鍍靶機(4)可為平面真空磁控濺鍍靶機〔請再一併參閱第三圖本發明應用在平面真空磁控濺鍍靶機之使用狀態示意圖所示〕、圓形平面真空磁控濺鍍靶機〔請再一併參閱第四圖本發明應用在圓形平面真空磁控濺鍍靶機之使用狀態示意圖所示〕、圓柱形磁真空磁控濺鍍靶機〔請再一併參閱第五圖本發明應用在圓柱形磁真空磁控濺鍍靶機之使用狀態示意圖所示〕任一種,控制該真空磁控濺鍍靶機(4)內之冷卻水,使該濺鍍靶材(1)的靶材面工作維持在至多150℃以下,同時該真空磁控濺鍍 靶機(4)之腔體內的工作溫度至少300℃以上、真空度在0.1Pa以下,即可對經由D步驟處理之該金屬基材(5)進行真空磁控濺鍍作業〔請再一併參閱第六圖本發明於增強型非平衡閉合磁場進行真空磁控濺鍍作業狀態示意圖、第七圖本發明於大型多靶非平衡閉合磁場進行真空磁控濺鍍作業狀態示意圖、第八圖本發明之另一進行真空磁控濺鍍作業狀態示意圖及第九圖本發明之又一進行真空磁控濺鍍作業狀態示意圖所示〕,利用該滲透液(2)之有機金屬鹽〔如:鐵、鈷、鎳等〕在150℃以下未分解前仍保持為非磁性質,被濺射後至高溫區分解出鐵、鈷、鎳等奈米有機金屬鹽之金屬顆粒而沉積在該金屬基材(5)上,作為碳素的催化劑,使得在來自該濺鍍靶材(1)之源源不絕的碳原子或碳團簇快速相互鍵結,形成有序碳結構,而即可在該金屬基材(5)之全面或部分面的凹凸粗糙部上形成有碳奈米管或石墨烯任一種或兩種組合之有序的二維或三維碳結構層(51)〔第十圖本發明之成形狀態示意圖、第十一圖本發明之另一成形狀態示意圖及第十二圖本發明之又一成形狀態示意圖所示〕,並利用維持該真空磁控濺鍍靶機(4)之工作條件以控制在該金屬基材(5)上所形成之碳結構層(51)的長度或片徑。 In order to have a more complete and clear disclosure of the technical content used in the present invention, the purpose of the invention and the effects achieved, it will be described in detail below, and please refer to the disclosed drawings and figure numbers: first, please refer to As shown in the schematic diagram of the production process of the first figure of the present invention, the present invention mainly includes the following steps: A. Graphite sputtering target material: high-purity graphite with graphite content≧99.95% is made into magnetron sputtering targets of various geometric shapes material, and control the porosity of the sputtering target to 15%~30%; B. Penetrant: dissolve organic metal salts [such as: iron, cobalt, nickel, etc.] in organic solvents to make them reach saturated solubility , and make the permeate; C. permeate: Please refer to the second figure for the structure diagram of the vacuum infiltration furnace of the present invention As shown in the figure, the sputtering target (1) and the penetrant (2) are put into a vacuum infiltration furnace (3) together, and the vacuum infiltration furnace (3) is provided with a furnace body (31), and the furnace body (31 ) for setting the sputtering target (1), and make the permeate (2) submerge the sputtering target (1) in the furnace body (31), and set a vacuum valve in the furnace body (31) (311) is connected with the air pressure control device (32), and the high vacuum pump of the air pressure control device (32) can be used to vacuumize the interior of the furnace body (31), and a vacuum gauge is provided on the furnace body (31) (312), so that the pressure value inside the body of furnace (31) can be observed through the vacuum gauge (312), so that the penetrating liquid (2) can penetrate into the sputtering under the vacuum environment in the body of furnace (31) In the target (1), the furnace body (31) is also connected with a permeate recovery tank (33), so that the permeate that can be recycled through the permeate recovery tank (33) can be recycled for repeated use; D. Metal substrate: Metal substrates such as high-purity aluminum foil with an aluminum content ≥ 99.7% or high-purity copper foil with a copper content of 99.7% are chemically rough-plated or electrochemically etched or sprayed or sputtered on both sides to form Concave-convex roughness is formed on the surface of the metal substrate; E. Sputtering: Put the sputtering target (1) that has been infiltrated by the penetrant (2) into a vacuum magnetron sputtering target machine (4), and the vacuum The magnetron sputtering target machine (4) can be a planar vacuum magnetron sputtering target machine (please refer to the third figure together as shown in the schematic diagram of the use state of the present invention applied to a planar vacuum magnetron sputtering target machine], circular Planar vacuum magnetron sputtering target machine (please refer to the fourth figure together with the schematic diagram of the use state of the present invention applied to the circular plane vacuum magnetron sputtering target machine), cylindrical magnetic vacuum magnetron sputtering target machine [ Please refer to the fifth figure again and the present invention is applied to any one of the schematic diagram of the use state of the cylindrical magnetic vacuum magnetron sputtering target machine] to control the cooling water in the vacuum magnetron sputtering target machine (4), so that The target surface of the sputtering target (1) is kept at most below 150°C, while the vacuum magnetron sputtering The working temperature in the cavity of the target machine (4) is at least 300°C and the vacuum degree is below 0.1Pa, and then the vacuum magnetron sputtering operation can be performed on the metal substrate (5) processed in step D [please also Refer to the sixth figure, the schematic diagram of the vacuum magnetron sputtering operation state of the present invention in the enhanced unbalanced closed magnetic field, the seventh figure, the schematic diagram of the vacuum magnetron sputtering operation state of the present invention in the large multi-target non-balanced closed magnetic field, and the eighth figure Another schematic diagram of the vacuum magnetron sputtering operation state of the invention and the schematic diagram of another vacuum magnetron sputtering operation state of the present invention shown in Figure 9], using the organometallic salt of the penetrant (2) [such as: iron , cobalt, nickel, etc.] remains non-magnetic before being decomposed below 150°C, and after being sputtered to a high temperature area, metal particles of nano-organic metal salts such as iron, cobalt, and nickel are decomposed and deposited on the metal substrate On (5), as a carbon catalyst, the carbon atoms or carbon clusters from the sputtering target (1) in an endless supply are quickly bonded to each other to form an ordered carbon structure, so that the metal An ordered two-dimensional or three-dimensional carbon structure layer (51) of carbon nanotubes or graphene or a combination of both is formed on the concave-convex rough part of the entire or partial surface of the substrate (5) [the tenth figure of the present invention The schematic diagram of the forming state of the present invention, the schematic diagram of another forming state of the present invention in the eleventh figure and the schematic diagram of another forming state of the present invention in the twelfth figure], and use the vacuum magnetron sputtering target machine (4) to maintain the work The conditions are to control the length or sheet diameter of the carbon structure layer (51) formed on the metal substrate (5).

如此一來,即可將該金屬基材(5)應用於電容器電極箔、超級電容器電極箔、鋰電池電極、散熱膜、EMI散熱膜等。 In this way, the metal substrate (5) can be applied to capacitor electrode foils, supercapacitor electrode foils, lithium battery electrodes, heat dissipation films, EMI heat dissipation films, and the like.

藉由以上所述,本發明之使用實施說明可知,本發明與現有技術手段相較之下,本發明主要係於製作上更為簡易便利,且更能 節省製作工時,而在其整體施行使用上更增實用功效特性者。 By the above, the description of the use and implementation of the present invention shows that compared with the prior art means, the present invention is mainly simpler and more convenient to manufacture, and more capable of It saves manufacturing man-hours and adds more practical and functional characteristics in its overall implementation and use.

然而前述之實施例或圖式並非限定本發明之產品結構或使用方式,任何所屬技術領域中具有通常知識者之適當變化或修飾,皆應視為不脫離本發明之專利範疇。 However, the aforementioned embodiments or drawings do not limit the product structure or usage of the present invention, and any appropriate changes or modifications by those with ordinary knowledge in the technical field shall be considered as not departing from the patent scope of the present invention.

綜上所述,本發明實施例確能達到所預期之使用功效,又其所揭露之具體構造,不僅未曾見諸於同類產品中,亦未曾公開於申請前,誠已完全符合專利法之規定與要求,爰依法提出發明專利之申請,懇請惠予審查,並賜准專利,則實感德便。 To sum up, the embodiment of the present invention can indeed achieve the expected use effect, and the specific structure disclosed by it has not only never been seen in similar products, nor has it been disclosed before the application, and it has fully complied with the provisions of the Patent Law In accordance with the requirements, it is very convenient to file an application for a patent for invention in accordance with the law, and sincerely ask for the review and approval of the patent.

Claims (9)

一種金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其主要係包括下列步驟:A.石墨濺鍍靶材:將石墨製作成各種幾何型狀的磁控濺鍍靶材;B.滲透液:將有機金屬鹽溶解於有機容劑中,使其達到飽和溶解度,而製作出滲透液;C.滲透:將該濺鍍靶材與該滲透液一併置入真空滲透爐,讓該滲透液於真空滲透爐內之真空環境下滲透至該濺鍍靶材中,而該真空滲透爐設有爐體,該爐體內供設置該濺鍍靶材,且令該滲透液於該爐體內淹沒該濺鍍靶材,於該爐體設有真空閥與氣壓控制裝置相連結,利用該氣壓控制裝置之高真空泵可對該爐體內部進行抽真空作業,並於該爐體設有真空表,透過該真空表觀察該爐體內部的氣壓值;D.金屬基材:將金屬基材於雙面表面形成有凹凸粗糙部;E.濺鍍:將經過該滲透液滲透後之該濺鍍靶材置入真空磁控濺鍍靶機內,控制該真空磁控濺鍍靶機內之冷卻水,即可對經由D步驟處理之該金屬基材進行真空磁控濺鍍作業,利用該滲透液之有機金屬鹽在150℃以下未分解前仍保持為非磁性質,被濺射後至高溫區分解出奈米有機金屬鹽之金屬顆粒而沉積在該金屬基材上,作為碳素的催化劑,使 得在來自該濺鍍靶材之碳快速相互鍵結,形成有序碳結構,即可在該金屬基材之凹凸粗糙部上形成有序的二維或三維碳結構層。 A manufacturing method for the ordered arrangement of graphene carbon nanotubes on a metal substrate and carbon deposition composite coating, which mainly includes the following steps: A. Graphite sputtering target material: making graphite into magnetrons of various geometric shapes Sputtering target; B. Penetration solution: dissolve the organic metal salt in the organic solvent to make it reach saturation solubility, and make the permeation solution; C. Penetration: put the sputtering target material and the permeation solution together Vacuum infiltration furnace, allowing the penetrant to infiltrate into the sputtering target material under the vacuum environment in the vacuum infiltration furnace, and the vacuum infiltration furnace is provided with a furnace body for setting the sputtering target material, and making the sputtering target material The permeate submerges the sputtering target in the furnace body, and a vacuum valve is provided in the furnace body to connect with the air pressure control device. The high vacuum pump of the air pressure control device can be used to evacuate the inside of the furnace body, and in the furnace body The furnace body is equipped with a vacuum gauge, and the air pressure value inside the furnace body is observed through the vacuum gauge; D. metal substrate: the metal substrate is formed with concave and convex rough parts on the double-sided surface; E. sputtering: the penetrating liquid is passed through After infiltration, the sputtering target material is put into the vacuum magnetron sputtering target machine, and the cooling water in the vacuum magnetron sputtering target machine can be controlled to perform vacuum magnetron sputtering on the metal substrate processed through step D. In the plating operation, the organometallic salt of the penetrating solution remains non-magnetic until it decomposes below 150°C. After being sputtered, the metal particles of nano-organic metal salt are decomposed in the high temperature area and deposited on the metal substrate. , as a carbon catalyst, making The carbon from the sputtering target can be quickly bonded to each other to form an ordered carbon structure, that is, an ordered two-dimensional or three-dimensional carbon structure layer can be formed on the concave-convex rough part of the metal substrate. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該濺鍍靶材之石墨含量≧99.95%,且孔隙率為15%~30%。 The manufacturing method of ordered arrangement of graphene carbon nanotubes on metal substrate and carbon deposition composite coating as described in Claim 1, wherein, the graphite content of the sputtering target is ≧99.95%, and the porosity is 15%~ 30%. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該真空滲透爐之該爐體連接有滲透液回收槽,經由該滲透液回收槽回收使用後之滲透液供重覆循環使用。 The manufacturing method of ordered arrangement of graphene carbon nanotubes on metal substrate and carbon deposition composite coating as described in Claim 1, wherein, the furnace body of the vacuum infiltration furnace is connected with a permeate recovery tank, through which the permeate The recovery tank recovers the used permeate for repeated use. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該金屬基材係為鋁含量≧99.7%之高純度鋁箔、銅含量99.7%之高純度銅箔任一種。 The manufacturing method of ordered arrangement and carbon deposition composite coating of graphene carbon nanotubes on metal substrate as described in Claim 1, wherein the metal substrate is high-purity aluminum foil with aluminum content ≧99.7% and copper content 99.7% % of high-purity copper foil of any kind. 如請求項1或4所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該金屬基材於雙面係經化學粗鍍、電化學腐蝕、噴塗、蒸濺鍍任一種方式在表面形成有凹凸粗糙部。 The manufacturing method of ordered arrangement of graphene carbon nanotubes and carbon deposition composite coating of metal substrate as described in claim 1 or 4, wherein, the metal substrate is subjected to chemical rough plating, electrochemical corrosion, Any method of spraying or sputtering forms unevenness and roughness on the surface. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該真空磁控濺鍍靶機為平面真空磁控濺鍍靶機、圓形平面真空磁控濺鍍靶機、圓柱形磁真空磁控濺鍍靶機任一種。 The manufacturing method of ordered arrangement and carbon deposition composite coating of graphene carbon nanotubes on metal substrate as described in Claim 1, wherein, the vacuum magnetron sputtering target machine is a planar vacuum magnetron sputtering target machine, circular Any one of the planar vacuum magnetron sputtering target machine and the cylindrical magnetic vacuum magnetron sputtering target machine. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該濺鍍靶材的靶材面工作維持在至多150℃以下,同時該真空磁控濺鍍靶機之腔體內的工作溫度至少300℃以上、真空度在0.1Pa以下。 The manufacturing method of ordered arrangement of graphene carbon nanotubes on metal substrate and carbon deposition composite coating as described in Claim 1, wherein the target surface of the sputtering target is maintained at a temperature below 150°C, and at the same time the The working temperature in the cavity of the vacuum magnetron sputtering target machine is at least 300°C and the vacuum degree is below 0.1Pa. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該有機金屬鹽係為鐵、鈷、鎳任一種。 The manufacturing method of ordered arrangement of graphene carbon nanotubes on metal substrate and carbon deposition composite coating as described in Claim 1, wherein the organometallic salt is any one of iron, cobalt, and nickel. 如請求項1所述金屬基材之石墨烯碳奈米管之有序排列與碳沉積複合塗層製造方法,其中,該金屬基材之凹凸粗糙部上所形成的該碳結構層係為碳奈米管、石墨烯任一種或兩種之組合。 The manufacturing method of the ordered arrangement of graphene carbon nanotubes on the metal substrate and the carbon deposition composite coating as described in claim 1, wherein the carbon structure layer formed on the concave-convex rough part of the metal substrate is carbon Any one or a combination of nanotubes and graphene.
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Citations (2)

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US20010032686A1 (en) * 1998-05-20 2001-10-25 Yuichiro Shindo Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target
TW201943556A (en) * 2018-04-20 2019-11-16 昂筠國際股份有限公司 Metal-carbon composite foil heat sink and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010032686A1 (en) * 1998-05-20 2001-10-25 Yuichiro Shindo Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target
TW201943556A (en) * 2018-04-20 2019-11-16 昂筠國際股份有限公司 Metal-carbon composite foil heat sink and method of manufacturing the same

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