TWI785600B - Apparatus for forming hole and method of forming hole - Google Patents

Abstract

The device for forming a hole includes a laser light source, an acousto-optic modulator for controlling the processing path of the laser beam provided by the laser source, a scanning head for irradiating the laser beam provided by the acousto-optic modulator to the object to be processed, and an acoustic-optic modulator. The light modulator controls the processing path of the laser beam in the following manner: the laser beam is irradiated to the object to be processed along the first circular processing path to form a first trench on the object to be processed; The laser beam is irradiated to the object to be processed to form a second ditch on the object, and the second ditch is spaced apart from the first ditch in a region surrounded by the first ditch.

Description

Device for forming holes and method for forming holes

The invention relates to a device for forming holes and a method for forming holes.

In general, laser processing refers to a method in which a laser beam is condensed to one focus using a condenser lens, and the focus is irradiated onto the surface or inside of an object to be processed.

In order to perform laser processing, the laser processing apparatus may include a two-dimensional scanning head that swings a laser beam output from a laser light source in a two-dimensional direction. As an example of a two-dimensional scanning head, a galvanometer scanner can be used.

However, only with such a two-dimensional scanning head, not only a large amount of laser processing time is required, but also the positional accuracy may be slightly reduced.

In order to reduce laser processing time and improve position accuracy, the laser processing device may further include an acousto-optic modulator, and the acousto-optic modulator deflects the laser beam output from the laser light source by using the acousto-optic effect.

The problem to be solved is to provide a device for forming holes with high processing speed and excellent processing quality.

The problem to be solved is to provide a method for forming holes with high processing speed and excellent processing quality.

However, the subject to be solved is not limited to the above disclosure.

In one aspect, a device for forming a hole can be provided, the device includes: a laser light source; an acousto-optic modulator, which controls the processing path of the laser beam provided by the laser light source; a scanning head, which is controlled by the acoustic light The laser beam provided by the optical modulator irradiates the object to be processed, and the acousto-optic modulator controls the processing path of the laser beam in the following manner: along the first annular processing path, the The laser beam is irradiated to the object to be processed to form a first trench on the object to be processed, and the laser beam is irradiated to the object to be processed along a second annular processing path to form a groove on the object to be processed. a second ditch, the second ditch is spaced apart from the first ditch in a region surrounded by the first ditch.

The first annular machining path may have a closed loop shape, and the second annular machining path may have an open loop shape.

Each of the first annular machining path and the second annular machining path may have a closed loop shape.

Each of the first and second annular machining paths may have a circular shape.

The first annular machining path and the second annular machining path may form concentric circles.

The acousto-optic modulator may control the processing path of the laser beam in the following manner: after the laser beam is irradiated to the object to be processed along the first circular processing path, The second circular processing path irradiates the laser beam to the object to be processed.

The acousto-optic modulator may control the processing path of the laser beam in the following manner: after the laser beam is irradiated to the object to be processed along the second annular processing path, The first circular processing path irradiates the laser beam to the object to be processed.

The depth of the first ditch may be the same as that of the second ditch.

A depth of the second trench may be greater than a depth of the first trench.

The device further includes: a suction hood disposed adjacent to the object to be processed, when the laser beam is processed along the first circular processing path and the second circular processing path After the path irradiates the object to be processed, the suction hood removes the first part of the object to be removed which is surrounded by the first ditch, and the first part to be removed can be formed by removing the part to be removed. hole.

After removing the first part to be removed from the object to be processed, the acousto-optic modulator controls the processing path of the laser beam in such a manner that the laser beam is directed along a third circular processing path. irradiating the object to be processed with a beam to form a third trench on the object to be processed, and irradiating the object to be processed with the laser beam along a fourth annular processing path to form a third trench on the object to be processed. Four Ditch, the The fourth ditch is separated from the third ditch in the area surrounded by the third ditch, and the laser beams forming the third ditch and the fourth ditch can be irradiated through the first hole to the object to be processed.

After the laser beam is irradiated to the object to be processed along the third circular processing path and the fourth circular processing path, the suction cover can remove the The second removal object part surrounded by the ditch.

The device further includes: a suction cover disposed adjacent to the object to be processed, and the acousto-optic modulator controls the processing path of the laser beam in the following manner: along the second After an annular processing path irradiates the laser beam to the object to be processed, the laser beam is irradiated to the object to be processed along the second annular processing path, and the suction hood: After the laser beam is irradiated to the object to be processed along the first circular processing path and before the laser beam is irradiated to the object to be processed along the second circular processing path, all The first removal object portion of the object to be processed surrounded by the first ditch to form a first hole, and the laser beam is irradiated along the second annular processing path to the exposed portion of the first hole After the object to be processed, a second removal object portion of the object to be processed surrounded by the second ditch may be removed to form a second hole.

The object to be processed includes: a lower insulating film; an upper insulating film provided on the lower insulating film; and a conductive film provided between the lower insulating film and the upper insulating film, and the first trench And the second trench may be formed in the upper insulating film.

The device further includes: a suction cover to be adjacent to the object to be processed It is set in such a way that after the laser beam is irradiated to the object to be processed along the first annular processing path and the second annular processing path, the part of the object to be processed that is surrounded by the first ditch is removed. The portion to be removed may be formed by removing the portion to be removed to form a hole exposing the upper surface of the conductive film.

In one aspect, there may be provided a method for forming a hole, the method comprising: irradiating a laser beam to an object to be processed along a first circular processing path to form a first trench; The object is irradiated with the laser beam to form a second ditch; and a first removal target portion surrounded by the first ditch is removed from the processing object, the second ditch being formed in the first removal target portion , and separated from the first ditch.

Each of the first and second annular machining paths may have a closed loop shape.

After the laser beam is irradiated to the object to be processed along the first circular processing path, the laser beam may be irradiated to the object to be processed along the second circular processing path.

The depth of the first ditch may be the same as that of the second ditch.

The method further includes: after removing the first part to be removed from the object to be processed, irradiating the object to be processed with the laser beam along a third circular processing path to form a third trench; The fourth annular processing path irradiates the object to be processed with the laser beam to form a fourth ditch; and removing a second removal object portion surrounded by the third ditch from the object to be processed, the fourth A trench is formed in the second removal target portion and is spaced apart from the third trench.

The present disclosure may provide an apparatus for forming holes and a method for forming holes with improved processing quality.

The present disclosure can provide a hole-forming device and a hole-forming method capable of easily removing a portion to be removed.

The present disclosure may provide an apparatus for forming a hole and a method for forming a hole with increased processing speed.

However, the effects of the invention are not limited to the disclosure.

1: The device that forms the hole

100: laser light source

200:Acousto-optic modulator

210: The first sub-acousto-optic modulator

220: Second sub-acousto-optic modulator

300: guide mirror

400: scanning head

411: First galvanometer scanner

412:First reflector

413: Second galvanometer scanner

414: second reflector

420: focus lens

500: object to be processed

600: remove object part

601: the first block

602: second block

610: The upper part removes the target part

611: first upper block

612: second upper block

620: The lower part removes the object part

621: First lower block

622: second lower block

1000: platform

1000u: upper surface

1100: suction hood

A-A', BB', CC', D-D', E-E': line

CL: Conductive film

D1: first diameter

D2: second diameter

D3: third diameter

D4: fourth diameter

H1: the first hole

H2: second hole

H3: The third hole

IL1: Lower insulating film

IL2: Upper insulating film

LB: laser beam

LD: Lower ring diameter

LD1: First lower annular diameter

LD2: second lower annular diameter

LH: lower hole

LPL: lower circular machining path

LPL1: First lower circular machining path

LPL2: Second lower circular machining path

LT: Lower trench

LT1: first lower trench

LT2: Second lower trench

LTd: Depth of lower ditch

LT1d: First Lower Trench Depth

LT2d: second lower trench depth

PL1: The first circular machining path

PL2: The second circular machining path

PL3: The third circular machining path

PL4: The fourth circular processing path

PL5: The fifth circular machining path

PL6: sixth circular processing path

RR': Region

S110, S120, S130, S210, S220, S230, S310, S320, S330, S410, S420, S430, S440, S450, S460, S510, S520, S530, S540: steps

T1: First Ditch

T2: the second ditch

T3: The third ditch

T4: Fourth Ditch

T5: Fifth Ditch

T6: Sixth Ditch

T1d: first trench depth

T2d: second ditch depth

T3d: Third trench depth

T4d: Fourth trench depth

UD: upper annular diameter

UD1: First upper annular diameter

UD2: second upper annular diameter

UH: upper hole

UPL: upper circular machining path

UPL1: First upper circular machining path

UPL2: Second upper circular machining path

UT: upper trench

UT1: first upper trench

UT2: Second Upper Trench

UTd: upper ditch depth

UT1d: First Upper Trench Depth

UT2d: second upper trench depth

VD1: first direction

VD2: Second direction

FIG. 1 is a conceptual diagram of an apparatus ( 1 ) for forming holes according to an exemplary embodiment.

FIG. 2 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment.

FIG. 3 is a view of a viewpoint along a direction perpendicular to an upper surface of a platform for explaining the method of forming a hole of FIG. 2 .

FIG. 4 is an enlarged view of the RR' region of FIG. 3 for illustrating the method of forming a hole in FIG. 2 .

Fig. 5 is a cross-sectional view along line AA' of Fig. 4 .

FIG. 6 is an enlarged view corresponding to the RR' region of FIG. 3 for illustrating the method of forming a hole in FIG. 2 .

FIG. 7 is a cross-sectional view along line AA' of FIG. 6 .

Fig. 8 is used to illustrate the method of forming holes in Fig. 2, corresponding to AA' of Fig. 6 Cutaway view of the line.

FIG. 9 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment.

FIG. 10 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 9 .

Fig. 11 is a cross-sectional view along line BB' of Fig. 10 .

FIG. 12 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 9 .

Fig. 13 is a cross-sectional view along line BB' of Fig. 12 .

FIG. 14 is a cross-sectional view corresponding to line BB' of FIG. 12 for explaining the method of forming a hole in FIG. 9 .

FIG. 15 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment.

FIG. 16 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 15 .

Fig. 17 is a sectional view taken along line CC' of Fig. 16 .

18 is a cross-sectional view corresponding to line CC' of FIG. 16 for explaining the method of forming a hole in FIG. 15 .

FIG. 19 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment.

FIG. 20 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 .

Fig. 21 is a cross-sectional view taken along line DD' of Fig. 20 .

FIG. 22 is an enlarged view corresponding to the RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 .

Fig. 23 is a cross-sectional view taken along line DD' of Fig. 22 .

FIG. 24 is a cross-sectional view corresponding to line DD' of FIG. 22 for explaining the method of forming a hole in FIG. 19 .

FIG. 25 is an enlarged view corresponding to the RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 .

Fig. 26 is a cross-sectional view along line DD' of Fig. 25 .

FIG. 27 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 .

Fig. 28 is a cross-sectional view taken along line DD' of Fig. 27 .

FIG. 29 is a cross-sectional view corresponding to line DD' of FIG. 27 for explaining the method of forming a hole in FIG. 19 .

FIG. 30 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment.

FIG. 31 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 30 .

Fig. 32 is a cross-sectional view along line EE' of Fig. 31 .

FIG. 33 is a cross-sectional view corresponding to line EE' in FIG. 31 for explaining the method of forming a hole in FIG. 30 .

Fig. 34 is used for explaining the method for forming the hole of Fig. 30, corresponding to Fig. 3 Zoom-in view of the RR' region.

Fig. 35 is a cross-sectional view along line EE' of Fig. 34 .

FIG. 36 is a cross-sectional view corresponding to line EE' of FIG. 34 for explaining the method of forming a hole in FIG. 30 .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference symbols refer to the same constituent elements, and the size or thickness of each constituent element may be exaggerated for clarity of description.

Terms including ordinal numbers such as "first" and "second" may be used to describe various constituent elements, but the constituent elements are not limited by the terms. The terms are used only for the purpose of distinguishing one constituent element from other constituent elements. For example, without departing from the patent scope of the present invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may also be named a first constituent element. The term "and/or" includes a combination of related items or any one of related items.

Hereinafter, the "processing path" may refer to the path that the laser passes on the object to be processed.

Hereinafter, "the laser beam is deflected in a direction" may mean that the deflected laser beam travels in a combined direction of the travel direction of the laser beam before deflection and a direction.

Hereinafter, "the diameter of the trench" may mean "the diameter of the centerline extending along the center of the width of the trench".

In the following, "maximum focusing distance of the laser beam" may refer to the acousto-optic modulator The optical distance from where the laser beam is most focused.

FIG. 1 is a conceptual diagram of an apparatus ( 1 ) for forming holes according to an exemplary embodiment.

Referring to Fig. 1, a device (1) for forming a hole including a laser light source (100), an acousto-optic modulator (200), a guide mirror (300), a scanning head (400) and a platform (1000) can be provided. The laser light source (100) can emit a laser beam (LB). The laser light source (100) can provide a laser beam (LB) to the acousto-optic modulator (200).

The acousto-optic modulator (200) deflects the laser beam (LB). The acousto-optic modulator (200) may include a first sub-acousto-optic modulator (210) and a second sub-acousto-optic modulator (220). The first sub-AOM (210) can deflect the laser beam (LB) in the first direction (VD1). The second sub-AOM (220) can deflect the laser beam (LB) in the second direction (VD2). The first direction ( VD1 ) and the second direction ( VD2 ) may be perpendicular to each other. For example, the first direction ( VD1 ) and the second direction ( VD2 ) may be perpendicular to the arrangement direction of the first sub-AOM ( 210 ) and the second sub-AOM ( 220 ).

The first sub-AOM (210) and the second sub-AOM (220) can use the acousto-optic effect to deflect the laser beam (LB). For example, each of the first sub-AOM (210) and the second sub-AOM (220) may include: a crystal layer; a piezoelectric transducer providing vibration at one side of the crystal layer; And the absorption part is arranged on the other side of the crystal layer to absorb the sound of the crystal layer. The crystal layer may include a material capable of generating sound waves through vibration. For example, the crystal layer may include glass (Glass) or quartz (Quartz). When the piezoelectric transducer is vibrated by an electrical signal, it may be in the crystal layer Generate sound waves. A part of the laser beam (LB) incident on the crystal layer is diffracted (or deflected) in the crystal layer by the generated acoustic wave, while another part of the laser beam (LB) incident on the crystal layer is not diffracted in the crystal layer and penetrate through the crystal layer. The diffraction angle (or degree of deflection) of the laser beam (LB) can vary depending on the frequency of the sound waves generated. Since the first sub-AOM (210) and the second sub-AOM (220) can deflect the laser beam (LB) using the acousto-optic effect without mechanical operations such as rotation of a motor, it is possible to Improve processing speed and laser beam (LB) processing accuracy. In addition, the acousto-optic modulator (200) can adjust the maximum focusing distance of the laser beam (LB). The maximum focusing distance may be the optical distance between the acousto-optic modulator (200) and the position where the laser beam (LB) is maximally focused. Each of the first sub-AOM (210) and the second sub-AOM (220) can be called a Bragg Cell. The acousto-optic modulator (200) can provide the laser beam (LB) to the guiding mirror (300).

The guide mirror (300) can reflect the laser beam (LB) and guide the laser beam (LB) to the scan head (400). Although two guide mirrors (300) are shown, this is exemplary. In another example, one or more than three guide mirrors (300) may be provided.

The scanning head (400) can adjust the traveling direction of the laser beam (LB). Adjusting the traveling direction of the laser beam (LB) may be substantially the same as adjusting the processing path, which is the path of the laser beam (LB) that processes the object (500) on the object (500) . That is, the scanning head (400) can adjust the processing path of the laser beam (LB).

The scan head (400) may include a first mirror (412), a first galvanometer scanner (411), a second mirror (414), a second galvanometer scanner (413) and a condenser Focus lens (420). The first mirror (412) may reflect the laser beam (LB) within the scan head (400). The first mirror (412) may provide the laser beam (LB) to the second mirror (414). The first galvanometer scanner (411) is rotatable around a first axis passing through the first galvanometer scanner (411). The first galvanometer scanner (411) may be coupled to the first mirror (412). The first galvanometer scanner (411) can control the posture of the first mirror (412) to adjust the direction in which the laser beam (LB) is reflected by the first mirror (412) and travels.

The second mirror (414) may reflect the laser beam (LB) reflected from the first mirror (412). The second mirror (414) may provide the laser beam (LB) to the focusing lens (420). The second galvanometer scanner (413) is rotatable around a second axis passing through the second galvanometer scanner (413). The extending direction of the second axis may cross the extending direction of the first axis. For example, the extension direction of the second axis may be orthogonal to the extension direction of the first axis. A second galvanometer scanner (413) may be coupled to the second mirror (414). The second galvanometer scanner (413) can control the posture of the second mirror (414) to adjust the direction in which the laser beam (LB) is reflected by the second mirror (414) and travels.

The focusing lens (420) can focus the laser beam (LB) on the object to be processed (500).

The platform (1000) can support the object to be processed (500) and adjust the position of the object to be processed (500). The stage (1000) is capable of moving the object to be processed (500) in a direction parallel to the upper surface (1000u) of the stage (1000) and in a direction perpendicular to it.

The suction hood (1100) may be arranged adjacent to the object to be processed (500). The suction hood (1100) may have a suction force. Suction hood (1100) can be inhaled and removed The object to be processed (500) processed by the laser beam (LB) is removed. For example, the suction hood (1100) can suck the part to be removed, which will be described below, and remove it from the object to be processed.

A control part (not shown) for controlling the laser beam (LB), the acousto-optic modulator (200), the scan head (400) and the platform (1000) may be provided. In one example, the control unit may control the acousto-optic modulator (200) so that the laser beam (LB) processes the object to be processed (500) along a ring-shaped processing path.

The device (1) for forming a hole according to an exemplary embodiment may use a laser beam (LB) controlled by an acousto-optic modulator (200) to form a hole in an object to be processed. Hereinafter, a method of forming holes using the hole forming apparatus (1) of the exemplary embodiment will be described in detail.

FIG. 2 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment. FIG. 3 is a view of a viewpoint along a direction perpendicular to an upper surface of a platform for explaining the method of forming a hole of FIG. 2 . FIG. 4 is an enlarged view of the RR' region of FIG. 3 for illustrating the method of forming a hole in FIG. 2 . Fig. 5 is a cross-sectional view along line AA' of Fig. 4 . FIG. 6 is an enlarged view corresponding to the RR' region of FIG. 3 for illustrating the method of forming a hole in FIG. 2 . FIG. 7 is a cross-sectional view along line AA' of FIG. 6 . FIG. 8 is a cross-sectional view corresponding to line AA' of FIG. 6 for explaining the method of forming a hole in FIG. 2 .

2 to 5, the object to be processed (500) can be placed on the platform (1000). The object to be processed (500) may include electrically insulating substances and conductive substances. For example, the object to be processed (500) may include a lower insulating film (IL1), a conductive film (CL), and an upper insulating film (IL2). For example, the conductive film (CL) can be copper (Cu) wiring Floor.

The laser beam (LB) may be irradiated to the processing object (500) along the first circular processing path (PL1) (S110). The laser beam (LB) may be irradiated to the upper insulating film (IL2). For example, the laser beam (LB) may include continuous laser, nanosecond laser or femtosecond radiation. For example, the laser beam (LB) can be maximally focused on the upper surface of the upper insulating film (IL2). In other words, the spot size of the most focused laser beam (LB) may be the smallest on the upper surface of the upper insulating film (IL2). The processing path and maximum focusing distance of the laser beam (LB) can be adjusted by the acousto-optic modulator (200) described with reference to FIG. 1 . For example, the acousto-optic modulator (200) can control the laser beam (LB), so that the laser beam (LB) is focused on the upper surface of the upper insulating film (IL2) to the greatest extent and along the first circular processing path (PL1) Irradiation.

The first circular machining path (PL1) may have a closed-loop (Closed-Loop) shape. For example, the first annular machining path (PL1) may be circular in shape with a first diameter (D1). By irradiating a laser beam (LB) to the upper insulating film (IL2), a part of the upper insulating film (IL2) may be removed to form a first trench (T1).

The first trench (T1) may extend along the first annular machining path (PL1). For example, the first trench ( T1 ) may have a circular shape with a first diameter ( D1 ). The first trench (T1) may have a first trench depth (T1d). The first trench depth (T1d) may be substantially the same as the distance between the upper surface of the upper insulating film (IL2) and the upper surface of the conductive film (CL). The first trench ( T1 ) may expose the upper surface of the conductive film ( CL ). The first trench ( T1 ) may surround a portion of the upper insulating film ( IL2 ). A portion of the upper insulating film ( IL2 ) surrounded by the first trench ( T1 ) may be referred to as a removed Object part (600).

Referring to FIG. 2 , FIG. 6 and FIG. 7 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the second circular processing path ( PL2 ) ( S120 ). A laser beam (LB) may be irradiated to the removal target portion (600). The processing path and maximum focusing distance of the laser beam (LB) can be adjusted by the acousto-optic modulator (200) described with reference to FIG. 1 . For example, the laser beam (LB) may be maximally focused on the upper surface of the removal object portion (600). The spot size of the laser beam (LB) may be the smallest on the upper surface of the removal object portion (600).

The second circular machining path (PL2) may have a closed-loop shape. For example, the second annular machining path (PL2) may be circular in shape with a second diameter (D2). From a viewpoint along a direction perpendicular to the upper surface (1000u) of the platform (1000), the second circular processing path (PL2) may be disposed within the first circular processing path (PL1). The second annular machining path (PL2) may be spaced apart from the first annular machining path (PL1). The second diameter (D2) may be smaller than the first diameter (D1). For example, the second annular machining path (PL2) and the first annular machining path (PL1) may form concentric circles.

By irradiating the removal target part (600) with a laser beam (LB), a part of the removal target part (600) can be removed to form a second trench (T2). The second trench ( T2 ) may extend along the second annular machining path ( PL2 ). For example, the second trench ( T2 ) may have a circular shape with a second diameter ( D2 ). The second trench (T2) may have a second trench depth (T2d). The second trench depth ( T2d ) may be substantially the same as the first trench depth ( T1d ). The second trench depth (T2d) may be the same as that of the upper insulating film (IL2) The distance between the surface and the upper surface of the conductive film (CL) is substantially the same. The second trench ( T2 ) may expose the upper surface of the conductive film ( CL ). The second trench ( T2 ) can separate the part to be removed ( 600 ) into a first block ( 601 ) and a second block ( 602 ).

Referring to FIG. 2 and FIG. 8, the part to be removed (600) can be removed from the object to be processed (500) (S130). The process of removing the part to be removed (600) may include sucking the part to be removed (600) through the suction hood (1100) shown in FIG. 1 . The part to be removed (600) can be divided into a first block (601) and a second block (602) and sucked into the suction hood (1100). The removal target portion (600) may be removed to form a first hole (H1). The first hole (H1) can expose the conductive film (CL). The first hole ( H1 ) may be a region where a pad for mounting a solder ball is provided. For example, the pad may extend along the surface of the conductive film (CL) exposed by the first hole (H1) and the upper insulating film (IL2) adjacent to the first hole (H1). The pads and the conductive film (CL) can be electrically connected to each other. The solder ball and the conductive film (CL) can be electrically connected to each other through the pad.

The suction of the removal object part (600) to the suction cover (1100) can be determined by the following: the material of the removal object part (600), the depth of the first ditch (T1) and the second ditch (T2), the first ditch (T1) The distance from the second trench ( T1 ), the diameter of the second trench ( T2 ) (ie, the diameter of the second annular processing path ( PL2 ), and the suction force of the suction hood ( 1100 ). During the laser processing process, the suction force of the suction hood (1100) may be limited. When only the first trench ( T1 ) is provided, the limited suction force of the suction hood ( 1100 ) may not be sufficient to suck the removal object part ( 600 ). The present disclosure can provide a method that is easy to remove by forming the second trench ( T2 ) The method of removing the formed hole of the object portion (600) accurately.

In the case of machining the removal target portion ( 600 ) in a spiral shape, the outermost machining path must have a circular shape in order to form a hole having a desired shape. When machining along a circular machining path is followed by machining along a helical machining path, an area of overworked machining occurs at a portion where the circular shape is converted into the helical shape. That is, the method of forming the spiral hole may degrade the processing quality due to repeated processing. The first annular machining path (PL1) and the second annular machining path (PL2) of the present disclosure may be separated from each other. Therefore, the present disclosure can provide a method of forming a hole with improved processing quality without repeatedly processing an object to be processed.

The method of forming holes performed using an acousto-optic modulator (200) is very fast in processing speed compared to the method of forming holes performed by a mechanical method such as a processing method using a galvanometer. Accordingly, the present disclosure may provide a method of forming holes with increased processing speed.

FIG. 9 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment. FIG. 10 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 9 . Fig. 11 is a cross-sectional view along line BB' of Fig. 10 . FIG. 12 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 9 . Fig. 13 is a cross-sectional view along line BB' of Fig. 12 . FIG. 14 is a cross-sectional view corresponding to line BB' of FIG. 12 for explaining the method of forming a hole in FIG. 9 . For brevity of description, substantially the same content as that described with reference to FIG. 1 and that described with reference to FIGS. 2 to 8 may not be described.

Referring to Figures 9 to 11, the laser beam (LB) can be processed along the third circular path The diameter (PL3) is irradiated to the object to be processed (500) (S210). The laser beam (LB) may be irradiated to the upper insulating film (IL2). The third annular machining path (PL3) may have a closed loop shape. For example, the third annular machining path (PL3) may be circular in shape with a third diameter (D3).

By irradiating the upper insulating film (IL2) with a laser beam (LB) along the third circular processing path (PL3), a part of the upper insulating film (IL2) can be removed to form a third trench (T3). The third trench ( T3 ) may extend along the third annular machining path ( PL3 ). For example, the third trench ( T3 ) may have a circular shape with a third diameter ( D3 ). The third trench ( T3 ) may have a third trench depth ( T3d ). The third trench depth (T3d) may be smaller than the distance between the upper surface of the upper insulating film (IL2) and the upper surface of the conductive film (CL). The third trench ( T3 ) may surround a portion of the upper insulating film ( IL2 ). A portion of the upper insulating film ( IL2 ) surrounded by the third trench ( T3 ) may be referred to as a removal object portion ( 600 ).

Referring to FIG. 9 , FIG. 12 and FIG. 13 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the fourth circular processing path ( PL4 ) ( S220 ). A laser beam (LB) may be irradiated to the removal target portion (600). The fourth annular machining path (PL4) may have a closed loop shape. For example, the fourth annular machining path (PL4) may have a circular shape with a fourth diameter (D4). From a viewpoint along a direction perpendicular to the upper surface (1000u) of the platform (1000), the fourth circular processing path (PL4) may be disposed within the third circular processing path (PL3). The fourth annular machining pass (PL4) may be spaced apart from the third annular machining pass (PL3). The fourth diameter ( D4 ) may be smaller than the third diameter ( D3 ). For example, the fourth circular processing path (PL4) and the third circular processing path (PL3) can be shaped into concentric circles.

By irradiating the laser beam (LB) to the removal object portion ( 600 ), a part of the removal object portion ( 600 ) can be removed to form the fourth trench ( T4 ). A fourth trench ( T4 ) may extend along a fourth annular machining path ( PL4 ). For example, the fourth trench ( T4 ) may have a circular shape with a fourth diameter ( D4 ). The fourth trench ( T4 ) may have a fourth trench depth ( T4d ). The fourth trench depth ( T4d ) may be greater than the third trench depth ( T3d ). For example, the fourth trench depth ( T4d ) may be substantially the same as the distance between the upper surface of the upper insulating film ( IL2 ) and the upper surface of the conductive film ( CL ). The fourth trench ( T4 ) may expose the upper surface of the conductive film ( CL ). In one example, the process of forming the fourth trench ( T4 ) may include adjusting the maximum focusing distance of the laser beam (LB), so that the fourth trench ( T4 ) penetrates the upper insulating film ( IL2 ) to expose the conductive film. The maximum focusing distance of the laser beam (LB) can be adjusted by an acousto-optic modulator (200). The part to be removed (600) may be expanded by the fourth trench (T4). The removal object portion (600) may include a first block (601) disposed between the third trench (T3) and the fourth trench (T4) and a second block (602) surrounded by the fourth trench (T4).

Referring to FIG. 9 and FIG. 14, the part to be removed (600) can be removed from the object to be processed (500) (S230). The process of removing the part to be removed ( 600 ) may be substantially the same as the process of removing the part to be removed ( 600 ) described with reference to FIGS. 2 and 8 . The removal object part (600) may be removed to form the second hole (H2). The second hole (H2) may expose the conductive film (CL). The second hole ( H2 ) may be a region where a pad for mounting a solder ball is arranged.

The present disclosure can provide a form in which the removal object part (600) can be easily removed. The method of forming holes. The present disclosure can provide a method of forming a hole with high processing quality without the problem of reprocessing an object to be processed. The present disclosure may provide a method of forming holes with increased processing speed.

FIG. 15 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment. FIG. 16 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 15 . Fig. 17 is a sectional view taken along line CC' of Fig. 16 . 18 is a cross-sectional view corresponding to line CC' of FIG. 16 for explaining the method of forming a hole in FIG. 15 . For brevity of description, substantially the same content as that described with reference to FIG. 1 and that described with reference to FIGS. 2 to 8 may not be described.

Referring to FIGS. 15 to 17 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the fifth circular processing path ( PL5 ) ( S310 ). The fifth circular machining path ( PL5 ) may be substantially the same as the first circular machining path ( PL1 ) explained with reference to FIGS. 2 to 8 . The laser beam (LB) may be irradiated to the upper insulating film (IL2). By irradiating the upper insulating film (IL2) with a laser beam (LB) along the fifth circular processing path (PL5), a part of the upper insulating film (IL2) may be removed to form a fifth trench (T5). The fifth trench ( T5 ) may be substantially the same as the first trench ( T1 ) explained with reference to FIGS. 2 to 8 . A removal object portion ( 600 ) surrounded by a fifth trench ( T5 ) may be defined. The fifth trench ( T5 ) may expose the upper surface of the conductive film ( CL ).

The laser beam (LB) may be irradiated to the object to be processed (500) along the sixth circular processing path (PL6) (S320). A laser beam (LB) may be irradiated to the removal target portion (600). The sixth circular machining path ( PL6 ) may have an open-loop (Open-Loop) shape. For example, the sixth circular machining path (PL6) may be a circle with a portion cut away. From a viewpoint along a direction perpendicular to the upper surface (1000u) of the platform (1000), the sixth circular processing path (PL6) may be disposed within the fifth circular processing path (PL5). The sixth annular machining pass (PL6) may be spaced apart from the fifth annular machining pass (PL5). For example, the sixth annular machining path (PL6) and the fifth annular machining path (PL5) may share a center. The center of the sixth circular machining path ( PL6 ) may be a point spaced apart from all points arranged on the sixth circular machining path ( PL6 ) by the same distance.

By irradiating the laser beam (LB) to the removal object portion ( 600 ), a part of the removal object portion ( 600 ) can be removed to form the sixth trench ( T6 ). A sixth trench ( T6 ) may extend along a sixth annular machining path ( PL6 ). For example, the sixth trench ( T6 ) may have a circular shape with a part cut away. The sixth trench ( T6 ) may expose the upper surface of the conductive film ( CL ). Unlike what was explained with reference to FIGS. 2 to 8 , the sixth trench ( T6 ) may not divide the removal object portion ( 600 ) into a plurality of blocks.

Referring to FIG. 15 and FIG. 18, the part to be removed (600) can be removed from the object to be processed (500) (S330). The process of removing the part to be removed ( 600 ) may be substantially the same as the process of removing the part to be removed ( 600 ) described with reference to FIGS. 2 and 8 . In one example, the part to be removed (600) may be sucked into the suction hood (1100) in the state of a single structure. In one example, the removal target part ( 600 ) may be divided into a plurality of blocks (for example, the first block and the second block explained with reference to FIGS. 2 to 8 ) by the suction force of the suction hood ( 1100 ).

The part to be removed (600) may be removed from the object to be processed (500) to form a third hole (H3). The third hole (H3) can expose the conductive film (CL). The third hole ( H3 ) may be an area where a pad for mounting a solder ball is arranged.

The present disclosure can provide a method of easily removing a hole to be removed from the removal target portion ( 600 ) by forming a sixth trench ( T6 ) in the removal target portion ( 600 ). The present disclosure can provide a method of forming a hole with high processing quality without the problem of reprocessing an object to be processed. The present disclosure may provide a method of forming holes with increased processing speed.

FIG. 19 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment. FIG. 20 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 . Fig. 21 is a cross-sectional view taken along line DD' of Fig. 20 . FIG. 22 is an enlarged view corresponding to the RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 . Fig. 23 is a cross-sectional view taken along line DD' of Fig. 22 . FIG. 24 is a cross-sectional view corresponding to line DD' of FIG. 22 for explaining the method of forming a hole in FIG. 19 . FIG. 25 is an enlarged view corresponding to the RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 . Fig. 26 is a cross-sectional view along line DD' of Fig. 25 . FIG. 27 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 19 . Fig. 28 is a cross-sectional view taken along line DD' of Fig. 27 . FIG. 29 is a cross-sectional view corresponding to line DD' of FIG. 27 for explaining the method of forming a hole in FIG. 19 . For brevity of description, substantially the same content as that described with reference to FIG. 1 , the content described with reference to FIGS. 2 to 8 , and the content described with reference to FIGS. 9 to 14 may not be described.

Referring to FIGS. 19 to 21 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the first upper circular processing path ( UPL1 ) ( S410 ). The first upper annular machining path (UPL1) can be compared with the third annular machining path described with reference to FIGS. 9 to 14. The paths (PL3) are substantially the same. For example, the first upper annular machining path (UPL1) may be circular in shape with a first upper annular diameter (UD1).

The laser beam (LB) may be irradiated to the upper insulating film (IL2). By irradiating the upper insulating film (IL2) with a laser beam (LB) along the first upper circular processing path (UPL1), a part of the upper insulating film (IL2) may be removed to form a first upper trench (UT1). The first upper trench ( UT1 ) may be substantially the same as the third trench ( T3 ) explained with reference to FIGS. 9 to 14 . For example, the first upper trench (UT1) may be circular in shape with a first upper annular diameter (UD1). The first upper trench (UT1) may have a first upper trench depth (UT1d). The first upper trench depth (UT1d) may be smaller than the distance between the upper surface of the upper insulating film (IL2) and the upper surface of the conductive film (CL). The first upper trench (UT1) may surround a portion of the upper insulating film (IL2). A portion of the upper insulating film ( IL2 ) surrounded by the first upper trench ( UT1 ) may be referred to as an upper removal object portion ( 610 ).

Referring to FIG. 19 , FIG. 22 and FIG. 23 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the second upper circular processing path ( UPL2 ) ( S420 ). A laser beam (LB) may be irradiated to an upper removal object portion (610). The second upper annular machining path (UPL2) may have a closed loop shape. For example, the second upper annular machining path (UPL2) may be circular in shape with a second upper annular diameter (UD2). From a viewpoint along a direction perpendicular to the upper surface (1000u) of the platform (1000), the second upper annular processing path (UPL2) may be disposed within the first upper annular processing path (UPL1). The second upper annular machining path (UPL2) may be spaced apart from the first upper annular machining path (UPL1). The second upper annular diameter (UD2) can be smaller than the first Upper annular diameter (UD1). For example, the second upper annular machining path (UPL2) and the first upper annular machining path (UPL1) may be concentric circles.

By irradiating a laser beam (LB) to the upper removal target portion ( 610 ), a part of the upper removal target portion ( 610 ) may be removed to form a second upper trench ( UT2 ). The second upper trench (UT2) may extend along the second upper annular machining path (UPL2). For example, the second upper trench (UT2) may be circular in shape with a second upper annular diameter (UD2). The second upper trench (UT2) may have a second upper trench depth (UT2d). The second upper trench depth (UT2d) may be substantially the same as the first upper trench depth (UT1d). The second upper trench depth (UT2d) may be smaller than the distance between the upper surface of the upper insulating film (IL2) and the upper surface of the conductive film (CL). The second upper trench (UT2) may separate the upper removal target portion (610) into a first upper block (611) and a second upper block (612).

19 and 24, the upper part to be removed (610) can be removed from the object to be processed (500) (S430). The process of removing the upper removal target part ( 610 ) may include sucking the upper removal target part ( 610 ) through the suction hood ( 1100 ) shown in FIG. 1 . The upper part to be removed (610) may be divided into a first upper block (611) and a second upper block (612) to be sucked into the suction hood (1100). The upper removal target portion (610) may be removed to form an upper hole (UH). After the upper removal target portion ( 610 ) is removed, the upper hole (UH) may expose the upper insulating film ( IL2 ) disposed under the upper removal target portion ( 610 ).

Referring to FIG. 19 , FIG. 25 and FIG. 26 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the first lower circular processing path ( LPL1 ) ( S440 ). First The lower annular machining path ( LPL1 ) may have a closed loop shape. For example, the first lower annular machining path ( LPL1 ) may be circular in shape with a first lower annular diameter ( LD1 ).

The laser beam (LB) may be irradiated onto the upper insulating film (IL2) exposed by the upper hole (UH). By irradiating the laser beam (LB) to the upper insulating film (IL2) along the first lower circular processing path (LPL1), a part of the upper insulating film (IL2) can be removed to form the first lower trench (LT1) . The first lower trench (LT1) may extend along the first lower annular machining path (LPL1). For example, the first lower trench ( LT1 ) may be circular in shape with a first lower annular diameter ( LD1 ). The first lower trench (LT1) may have a first lower trench depth (LT1d). The first lower trench depth (LT1d) may be substantially the same as the distance between the upper surface of the upper insulating film (IL2) exposed by the upper hole (UH) and the upper surface of the conductive film (CL). The first lower trench (LT1) may expose the upper surface of the conductive film (CL). The first lower trench (LT1) may surround a portion of the upper insulating film (IL2). A portion of the upper insulating film ( IL2 ) surrounded by the first lower trench ( LT1 ) may be referred to as a lower removal object portion ( 620 ).

Referring to FIG. 19 , FIG. 27 and FIG. 28 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the second lower circular processing path ( LPL2 ) ( S450 ). A laser beam (LB) may be irradiated to a lower removal object portion (610). The second lower annular machining path ( LPL2 ) may have a closed loop shape. For example, the second lower annular machining path ( LPL2 ) may be circular in shape with a second lower annular diameter ( LD2 ). From the viewpoint along the direction perpendicular to the upper surface (1000u) of the platform (1000), the first Two lower annular machining paths (LPL2) may be arranged within the first lower annular machining path (LPL1). The second lower annular machining path (LPL2) may be spaced apart from the first lower annular machining path (LPL1). The second lower annular diameter ( LD2 ) may be smaller than the first lower annular diameter ( LD1 ). For example, the second lower annular machining path ( LPL2 ) and the first lower annular machining path ( LPL1 ) may be concentric circles.

By irradiating a laser beam (LB) to the lower removal target portion ( 620 ), a part of the lower removal target portion ( 620 ) may be removed to form a second lower trench ( LT2 ). The second lower trench (LT2) may extend along the second lower annular machining path (LPL2). For example, the second lower trench (LT2) may be circular in shape with a second lower annular diameter (LD2). The second lower trench (LT2) may have a second lower trench depth (LT2d). The second lower trench depth (LT2d) may be substantially the same as the first lower trench depth (LT1d). The second lower trench depth (LT2d) may be substantially the same as the distance between the upper surface of the lower removal target portion (620) and the upper surface of the conductive film (CL). The second lower trench ( LT2 ) may separate the lower removal target portion ( 620 ) into a first lower block ( 621 ) and a second lower block ( 622 ).

Referring to FIG. 19 and FIG. 29 , the lower part to be removed (620) may be removed from the object to be processed (500) (S460). The process of removing the lower removal target part ( 620 ) may include sucking the lower removal target part ( 620 ) through the suction hood ( 1100 ) shown in FIG. 1 . The lower part to be removed (620) may be divided into a first lower block (621) and a second lower block (622) and sucked into the suction hood (1100). The lower removal target portion (620) may be removed to form a lower hole (LH). The lower hole (LH) may expose the conductive film (CL). In one example, the upper hole (UH) and lower hole The holes (LH) may provide areas to deposit pads for placement of solder balls.

The present disclosure can provide a hole forming method for easily removing the upper removal target portion (610) and the lower removal target portion (620). The present disclosure can provide a method of forming a hole with high processing quality without the problem of reprocessing an object to be processed. The present disclosure may provide a method of forming holes with increased processing speed.

FIG. 30 is a flowchart for explaining a method of forming a hole according to an exemplary embodiment. FIG. 31 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 30 . Fig. 32 is a cross-sectional view along line EE' of Fig. 31 . FIG. 33 is a cross-sectional view corresponding to line EE' in FIG. 31 for explaining the method of forming a hole in FIG. 30 . FIG. 34 is an enlarged view corresponding to RR' region of FIG. 3 for explaining the method of forming a hole in FIG. 30 . Fig. 35 is a cross-sectional view along line EE' of Fig. 34 . FIG. 36 is a cross-sectional view corresponding to line EE' of FIG. 34 for explaining the method of forming a hole in FIG. 30 . For brevity of description, substantially the same content as that described with reference to FIG. 1 , the content described with reference to FIGS. 2 to 8 , and the content described with reference to FIGS. 9 to 14 may not be described.

Referring to FIGS. 30 to 32 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the upper circular processing path (UPL) ( S510 ). The upper annular machining path (UPL) may have a closed loop shape. For example, the upper annular machining path (UPL) may be circular in shape with an upper annular diameter (UD). The upper annular diameter (UD) may be small enough to enable the upper removal target portion (610) defined by an upper trench (UT) described later to be sucked into the suction hood (1100).

The laser beam (LB) may be irradiated to the upper insulating film (IL2). By irradiating a laser beam (LB) to the upper insulating film (IL2) along the upper circular processing path (UPL), a part of the upper insulating film (IL2) may be removed to form an upper trench (UT). The upper trench (UT) may extend along the upper annular machining path (UPL). For example, the upper trench (UT) may be circular in shape with an upper annular diameter (UD). The upper trench (UT) may have an upper trench depth (UTd). The upper trench depth (UTd) may be smaller than the distance between the upper surface of the upper insulating film (IL2) and the upper surface of the conductive film (CL). The upper trench (UT) may expose the upper surface of the conductive film (CL). The upper trench (UT) may surround a portion of the upper insulating film (IL2). A portion of the upper insulating film ( IL2 ) surrounded by the upper trench (UT) may be referred to as an upper removal object portion ( 610 ).

Referring to FIG. 30 and FIG. 33 , the upper part to be removed (610) can be removed from the object to be processed (500) (S520). The process of removing the upper removal target part ( 610 ) may include sucking the upper removal target part ( 610 ) through the suction hood ( 1100 ) shown in FIG. 1 . The upper removal target portion (610) may be removed to form an upper hole (UH). After the upper removal target portion ( 610 ) is removed, the upper hole (UH) may expose the upper insulating film ( IL2 ) disposed under the upper removal target portion ( 610 ).

Referring to FIG. 30 , FIG. 34 and FIG. 35 , the laser beam (LB) may be irradiated to the processing object ( 500 ) along the lower circular processing path (LPL) ( S530 ). The lower loop machining path (LPL) may have a closed loop shape. For example, the lower annular machining path (LPL) may be circular in shape with a lower annular diameter (LD).

The laser beam (LB) can be irradiated to the upper part exposed by the upper hole (UH) Insulating film (IL2). By irradiating a laser beam (LB) to the lower insulating film (IL1) along the lower loop processing path (LPL), a portion of the lower insulating film (IL1) may be removed to form a lower trench (LT). The lower trench (LT) may extend along the lower annular machining path (LPL). For example, the lower trench (LT) may be circular in shape with a lower annular diameter (LD). The lower trench (LT) may have a lower trench depth (LTd). The lower trench depth (LTd) may be substantially the same as the distance between the upper surface of the upper insulating film (IL2) exposed by the upper hole (UH) and the upper surface of the conductive film (CL). The lower trench (LT) may expose the upper surface of the conductive film (CL). The lower trench (LT) may surround a portion of the upper insulating film (IL2). A portion of the upper insulating film ( IL2 ) surrounded by the lower trench (LT) may be referred to as a lower removal object portion ( 620 ).

Referring to FIG. 30 and FIG. 36 , the lower part to be removed (620) may be removed from the object to be processed (500) (S540). The process of removing the lower removal target part ( 620 ) may include sucking the lower removal target part ( 620 ) through the suction hood ( 1100 ) shown in FIG. 1 . The lower removal target portion (620) may be removed to form a lower hole (LH). The lower hole (LH) may expose the conductive film (CL). In one example, the upper hole (UH) and the lower hole (LH) may provide areas for depositing pads for placement of solder balls.

The present disclosure can provide a hole forming method for easily removing the upper removal target portion (610) and the lower removal target portion (620). The present disclosure can provide a method of forming a hole with high processing quality without the problem of reprocessing an object to be processed. The present disclosure may provide a method of forming holes with increased processing speed method.

The above description about the embodiments of the technical idea of the present invention provides examples for explaining the technical idea of the present invention. Therefore, the technical idea of the present invention is not limited to the above-mentioned embodiments, and within the technical idea of the present invention, it is obvious to those skilled in the art that various modifications and changes such as combination and implementation of the embodiments can be performed.

1: The device that forms the hole

100: laser light source

200:Acousto-optic modulator

210: The first sub-acousto-optic modulator

220: Second sub-acousto-optic modulator

300: guide mirror

400: scanning head

411: First galvanometer scanner

412:First reflector

413: Second galvanometer scanner

414: second reflector

420: focus lens

500: object to be processed

1000: platform

1000u: upper surface

1100: suction hood

LB: laser beam

VD1: first direction

VD2: Second direction

Claims (20)

A device for forming a hole, comprising: a laser light source; an acousto-optic modulator for controlling the processing path of the laser beam provided by the laser light source; a scanning head for converting the laser beam provided by the acousto-optic modulator The beam is irradiated to the object to be processed; the suction hood is arranged adjacent to the object to be processed, and the acousto-optic modulator controls the processing path of the laser beam in the following manner: along the first irradiating the laser beam to the object to be processed by an annular processing path to form a first trench on the object to be processed, and irradiating the laser beam to the object to be processed along a second annular processing path forming a second ditch on the object to be processed, the second ditch is spaced apart from the first ditch in an area surrounded by the first ditch, and the suction hood removes the A first removal object portion surrounded by the first ditch. The device for forming holes according to claim 1, wherein the first annular processing path has a closed loop shape, and the second annular processing path has an open loop shape. The device for forming a hole as claimed in claim 1, wherein each of the first circular machining path and the second circular machining path has a closed loop shape. The apparatus for forming a hole as claimed in claim 1, wherein each of the first annular machining path and the second annular machining path has a circular shape. The device for forming holes according to claim 1, wherein the first annular processing path and the second annular processing path form concentric circles. The apparatus for forming a hole as claimed in claim 1, wherein said acousto-optic modulator controls said processing path of said laser beam in the following manner: along said first annular processing path, said laser After the laser beam is irradiated to the processing object, the laser beam is irradiated to the processing object along the second circular processing path. The apparatus for forming a hole as claimed in claim 1, wherein the acousto-optic modulator controls the machining path of the laser beam in the following manner: directing the laser beam along the second annular machining path After irradiating the object to be processed, the laser beam is irradiated to the object to be processed along the first circular processing path. The device for forming holes according to claim 1, wherein the depth of the first trench is the same as that of the second trench. The device for forming holes according to claim 1, wherein the depth of the second trench is greater than that of the first trench. The device for forming a hole as claimed in claim 1, wherein when the laser beam is along the first circular processing path and the second circular processing path After the working path irradiates the object to be processed, the suction hood removes the first part to be removed, and the first hole is formed by removing the first part to be removed. The apparatus for forming a hole according to claim 10, wherein after removing the first part to be removed from the object to be processed, the acousto-optic modulator controls the processing of the laser beam in the following manner Path: irradiating the laser beam to the object to be processed along a third annular processing path to form a third trench on the object to be processed, and irradiating the laser beam to the object along a fourth annular processing path the object to be processed to form a fourth ditch in the object to be processed, the fourth ditch is separated from the third ditch in the area surrounded by the third ditch, and the third ditch and the third ditch are formed. The laser beam of the fourth trench is irradiated to the object to be processed through the first hole. The device for forming a hole according to claim 11, wherein after the laser beam is irradiated to the object to be processed along the third circular processing path and the fourth circular processing path, the suction cover A second removal target portion of the object to be processed surrounded by the third ditch is removed. The apparatus for forming a hole as claimed in claim 1, wherein said acousto-optic modulator controls said processing path of said laser beam in the following manner: along said first annular processing path, said laser After irradiating the laser beam to the object to be processed, irradiating the object to be processed with the laser beam along the second annular processing path, The suction cover: after the laser beam is irradiated to the object to be processed along the first annular processing path and after the laser beam is irradiated to the object along the second annular processing path Before processing the object, removing the first portion to be removed to form a first hole, and irradiating the laser beam along the second annular processing path to the object to be processed exposed by the first hole Thereafter, a second removal target portion of the object to be processed surrounded by the second ditch is removed to form a second hole. The device for forming a hole according to claim 1, wherein the object to be processed includes: a lower insulating film; an upper insulating film provided on the lower insulating film; and a conductive film provided on the lower insulating film and the lower insulating film. Between the upper insulating films, the first trench and the second trench are formed in the upper insulating film. The device for forming a hole according to claim 14, wherein after the laser beam is irradiated to the object to be processed along the first circular processing path and the second circular processing path, the second circular processing path is removed. A portion to be removed, forming a hole exposing the upper surface of the conductive film by removing the portion to be removed. A method for forming a hole, comprising: irradiating a laser beam to an object to be processed along a first circular processing path to form a first trench; irradiating the laser beam to the object to be processed along a second circular processing path to forming a second ditch; and removing a first removal target portion surrounded by the first ditch from the object to be processed, the second ditch being formed in the first removal target portion and separated from the first ditch open. The method of forming a hole as recited in claim 16, wherein each of the first annular machining path and the second annular machining path has a closed loop shape. The method for forming a hole according to claim 16, wherein after the laser beam is irradiated to the object to be processed along the first circular processing path, the laser beam is irradiated along the second circular processing path. The beam is irradiated to the object to be processed. The method for forming a hole as claimed in claim 16, wherein the depth of the first trench is the same as that of the second trench. The method for forming a hole according to claim 16, further comprising: after removing the first portion to be removed from the object to be processed, irradiating the object with the laser beam along a third circular processing path , to form a third ditch; irradiating the object to be processed with the laser beam along a fourth annular processing path to form a fourth ditch; and removing the object to be processed from the object surrounded by the third ditch. 2. Remove the object part, The fourth ditch is formed in the second removal target portion and is separated from the third ditch.

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