TWI785519B - Microwave generator, uv light source, and method of processing substrate - Google Patents

Abstract

A microwave generator includes a core assembly, a first magnet, a second magnet, and a cooling assembly. The core assembly includes a first electrode piece and a second electrode piece coupled to the first electrode piece. The first magnet is coupled to the first electrode piece. The second magnet is coupled to the first electrode piece and is spaced from the first magnet. The second electrode piece is disposed between the first magnet and the second magnet. The cooling assembly includes at least one cooling fin. The cooling fin extends towards the second magnet. A UV light source and a method of processing substrate are also disclosed.

Description

Microwave generator, ultraviolet light source, and substrate processing method

The disclosure relates to a microwave generator, an ultraviolet light source, and a substrate processing method.

As semiconductor technology advances, there is an increasing demand for higher storage capacity, faster processing systems, higher performance and lower cost. To meet these demands, the semiconductor industry continues to scale down the dimensions of semiconductor components. Such scaling down increases the complexity of the semiconductor manufacturing process and the need for contamination control of the semiconductor manufacturing system.

According to some embodiments of the present disclosure, a microwave generator includes a core component, a first magnetic element, a second magnetic element, and a heat sink. The core component includes a first electrode element and a second electrode element sleeved on the first electrode element. The first magnetic element is sleeved on the first electrode element, and the second magnetic element is sleeved on the first electrode element and separated from the first magnetic element. The second electrode element is located between the first magnetic element and the second magnetic element. The heat dissipation element includes at least one heat dissipation fin, and the heat dissipation fin extends toward the second magnetic element.

According to some other embodiments of the present disclosure, an ultraviolet light source includes an ultraviolet light tube, a fan, at least one microwave generator, and a reflector. The fan is arranged above the ultraviolet lamp tube, and the microwave generator is arranged between the ultraviolet lamp tube and the fan, wherein the microwave generator includes at least one cooling fin, and the cooling fin extends toward the ultraviolet lamp tube. The reflector is arranged between the microwave generator and the ultraviolet light tube.

According to still other embodiments of the present disclosure, a substrate processing method includes exposing oxygen to ultraviolet radiation generated by an ultraviolet light source to form ozone in a processing region, and then exposing the substrate to the ozone to form ozone on the surface of the substrate. The oxide layer provides air flow through the heat sink of the ultraviolet light source for heat exchange, wherein the heat sink includes at least one air flow channel, one end of the air flow channel faces the substrate, and then performs an etching step to remove the oxide on the surface of the substrate Floor.

The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify some embodiments of the disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the description below, forming a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments in which the first and second features are formed Embodiments where additional features are formed such that the first and second features may not be in direct contact. In addition, some embodiments of the present disclosure may repeat element symbols and/or letters in various instances. This repetition is for brevity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms (such as "under", "under", "lower", "above", "upper" and the like may be used herein to describe an element shown in the figures. The relationship of a feature or feature to another element (or elements) or feature (or features). Spatially relative terms are intended to encompass different orientations of elements in use or operation in addition to the orientation depicted in the figures. The device/element may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.

In the manufacturing process of integrated circuits, layers of dielectric materials, semiconductor materials and conductive materials need to be formed on, for example, semiconductor substrates. These layers are then processed to form features such as electrical interconnects, dielectric layers, gates and electrodes. In subsequent processing steps, layers or features formed on the semiconductor substrate may be treated with ultraviolet radiation. Ultraviolet radiation can be used in rapid thermal process (RTP) to rapidly heat layers formed on a substrate. Ultraviolet radiation can also be used to promote curing or condensation polymerization of polymers or to create stressed film layers. Ultraviolet radiation is also commonly used to activate gases to clean chambers.

Referring to FIG. 1 , which is a cross-sectional view of some embodiments of a substrate processing chamber of the present disclosure. The substrate processing chamber 100 may be, for example, a cleaning chamber. The substrate processing chamber 100 may be a processing chamber using plasma capable of cleaning a substrate 102 in a processing region 101 within the chamber. In some embodiments, the substrate processing chamber 100 includes a chamber base 110 , a chamber wall 112 and a chamber lid 114 sealingly surrounding the processing region 101 . The substrate processing chamber 100 further includes components for forming a vacuum in the processing region 101, whereby plasma processing can be performed therein. The processing region 101 may be evacuated to a desired pressure using a vacuum pump 120 connected to the processing region 101 through the chamber base 110 and/or the chamber wall 112 .

In some embodiments, the chamber walls 112 and the chamber base 110 may comprise metallic materials such as aluminum or other suitable metals. In some embodiments, the chamber walls 112 and the chamber lid 114 are temperature controllable, eg, a heat exchange device may be used to heat and cool the various chamber components. For example, in some embodiments, the chamber wall 112 and the chamber lid 114 may be heated by a heater disposed outside the chamber wall 112 , such as a lamp set. In other embodiments, the cooling gas can be circulated outside the chamber wall 112 to cool the chamber wall 112 and the chamber lid 114 . In other embodiments, heating and/or cooling conduits embedded in chamber walls 112 and chamber lid 114 may be connected to fluid heater/cooler devices to control the temperature of processing region 101 . In some embodiments, the processing region 101 is further surrounded by one or more shields 116, and the shields 116 are used to protect the chamber walls 112 and/or the chamber lid 114 from the generated plasma and the Damage from treatments performed in the chamber.

The substrate processing chamber 100 further includes an RF source assembly 130 . In some embodiments, the radio frequency source assembly 130 is an inductive radio frequency source, which generally includes a radio frequency generator 132, a radio frequency matching circuit 134 and a coil 136, and the radio frequency matching circuit 134 is connected to the coil 136 and the radio frequency generator 132 between. The coil 136 is disposed adjacent to the chamber lid 114 . In some embodiments, RF generator 132 may provide pulses of RF energy to coil 136 to generate a plasma having a lower energy level and/or plasma density. The chamber lid 114 is typically a dielectric member (eg, quartz or ceramic material) to allow plasma formation in the processing region 101 from the RF generator 132 .

In some embodiments, the substrate processing chamber 100 further includes a gas delivery system 140, the gas delivery system 140 is used to deliver one or more processing gases into the processing area 101, wherein the processing area 101 is composed of the chamber base 110, the chamber Defined by chamber wall 112 and chamber lid 114. In some embodiments, the gas delivery system 140 is configured to generate an oxygen-containing gas containing an oxidizing agent (such as oxygen or ozone (O ₃ ). In some embodiments, the gas delivery system 140 is used to deliver a reactive gas, such as silicon-containing gas, hydrogen-containing gas, germanium-containing gas, chlorine-containing gas, oxygen-containing gas, fluorine-containing gas, boron-containing gas and/or phosphorus-containing gas, etc. In some embodiments, the gas delivery system 140 is used to deliver inert gases, such as Argon, helium, krypton and/or nitrogen. In some embodiments, the gas delivery system 140 includes a plurality of gas pipelines, and these gas pipelines are used to deliver the above-mentioned oxidant-containing gas, reactive gas, or inert gas.

The pressure in the processing region 101 can be adjusted by adjusting the flow rate of the gas delivered by the gas delivery system 140 and the pumping rate of the vacuum pump 120 . The vacuum pump 120 is further connected to a throttle valve 122 to adjust the suction rate of the vacuum pump 120 through the throttle valve 122 .

In some embodiments, operating the vacuum pump 120 can adjust the pressure of the processing region 101 in the substrate processing chamber 100 to a predetermined pressure, such as a vacuum state, to perform substrate processing steps. In some other embodiments, by operating the vacuum pump 120, the gas in the substrate processing chamber 100 can be evacuated, and the contamination particles generated in the previous processing steps in the substrate processing chamber 100 can also be discharged to achieve cleanliness ( purge) The purpose of the substrate processing chamber 100.

In some embodiments, the substrate processing chamber 100 further includes a substrate support assembly 150 including a substrate support 152 , for example, the substrate support 152 can be an electrostatic chuck for actively supporting the substrate during processing. The substrate support assembly 150 further includes a temperature controller 154 connected to the substrate support 152 for heating and/or cooling the substrate support 152 using the temperature controller 154 . The temperature controller 154 includes a heat exchange device to heat and/or cool the substrate support 152 to a predetermined temperature. The heat exchanging device is, for example, an embedded resistance heating element or a fluid cooling channel coupled to a heat exchanger.

During processing, the substrate support 152 can be selectively connected to another radio frequency generator 156, whereby a radio frequency bias can be further applied to a conductive element disposed in a portion of the substrate support 152 to divide the processing area 101 The formed plasma is attracted to the surface of the substrate 102 . In some embodiments, RF generator 156 is adapted to generate a cathodic or anodic bias voltage on the substrate during one or more portions of the substrate cleaning process, thereby regulating the charge retained on the substrate, and/or controlling the surface of the substrate. The amount of ion and plasma bombardment.

In some other embodiments, the substrate support 152 is grounded, or a direct current (DC) bias. In other embodiments, the substrate support 152 and the substrate 102 are electrically floating during plasma processing to minimize ion bombardment damage to the substrate 102 .

Delivery of RF energy from the RF generator 132 to the processing region 101 causes ionization of gas atoms in the processing region 101 . During the cleaning process, when the substrate 102 is exposed to the plasma generated in the processing region 101, the contamination on the surface of the substrate 102 will be knocked out, or desorbed from the surface, because The energy transmitted by the ionized atoms strikes the surface of the substrate 102 . In some embodiments, ionized gas atoms in the plasma may adsorb to the surface of the substrate 102 due to a bias voltage applied to the substrate 102 through the substrate support 152 .

In some embodiments, the RF power delivered to the coil 136 by the RF generator 132 is pulsed to form a low energy plasma such that the plasma potential formed in the substrate processing chamber 100 is relative to the substrate 102 Surface damage is minimized. The need to minimize or eliminate any damage to the surface of the substrate 102 using cleaning processes is critical for single crystal substrates prepared for the formation of epitaxial layers thereon. Damage to the substrate surface needs to be minimized, which will help reduce the number of defects and stress in the formed epitaxial layer.

In some embodiments, the substrate processing chamber 100 is further provided with a UV light source 200 for delivering energy to the surface of the substrate 102 during substrate processing. In some embodiments, the ultraviolet light source 200 is disposed on the chamber cover 114 to transmit ultraviolet light to the substrate 102 through the opening formed in the chamber cover 114 .

Then please refer to FIG. 1 and FIG. 2 at the same time, wherein FIG. 2 is a flow chart of some embodiments of a method for cleaning a semiconductor substrate disclosed in the present disclosure, wherein this method M can be performed in the substrate processing chamber as shown in FIG. 1 Executed in room 100. Step S10 includes placing the substrate 102 to be cleaned in the substrate processing chamber 100 . Since the substrate processing chamber 100 is kept in a vacuum state, the contamination and particulate matter (for example, oxygen, carbon, fluorine, silicon, and chlorine) present on the surface of the substrate 102 can be desorbed or removed and utilized to form Coatings on the inner surfaces of the substrate processing chamber 100 are collected and removed.

Next, one or more oxidation processing steps S12 and etching processing steps S14 are performed to clean the substrate 102 . The oxidation treatment step S12 is used to consume the contaminated or damaged silicon on the surface of the substrate 102 . The formed oxide layer is then removed by an etching process step S14 to expose a fresh and clean silicon surface.

In the oxidation treatment step S12, an oxidizing agent is delivered to the substrate processing chamber 100 to generate oxide on the top layer of the substrate 102 to be cleaned. In some embodiments, the oxidizing agent includes ozone (O ₃ ), which allows the oxidation of silicon to proceed at a relatively low temperature. In some embodiments, ozone is generated in the treatment region 101 by exposing oxygen to a combination of plasma and ultraviolet radiation. For example, energy can be transmitted to the processing region 101 through the ultraviolet light source 200 disposed on the chamber cover 114 during the processing, so that the input oxygen is exposed to plasma and ultraviolet radiation, and in the processing region 101 Ozone is produced as an oxidizing agent. The ozone then oxidizes the top surface of the substrate 102 to generate an oxide layer on the top surface of the substrate 102 to be cleaned.

Then an etching step S14 is performed to remove the oxide formed in the oxidation step S12. The etching step S14 may be physical etching, chemical etching or a combination of physical and chemical etching techniques. Taking chemical etching as an example, an etching gas is delivered into the substrate processing chamber 100 , and a plasma in the substrate processing chamber 100 is ignited to generate reactive species that chemically react with substances on the substrate 102 . Volatile by-products after the reaction can be further removed. The etching gas used in the chemical etching includes chlorine, fluorine or other compounds suitable for removing the oxide formed on the surface of the substrate in the etching step S14.

In physical etching, the etching process step S14 is performed by generating plasma for providing excited species, and the excited species system is used to bombard the surface of the substrate 102, so that the substance to be removed is physically removed from the surface of the substrate 102. removal of . In some embodiments, ions formed in the plasma are accelerated toward the surface of the substrate 102 by providing a bias to the substrate support 152 . The bombardment ions physically remove species on the surface of the substrate 102 by sputter etching. Generally speaking, the low-energy physical bombardment on the surface of the substrate 102 can reduce the damage to the silicon lattice on the surface of the substrate 102 . A low power bias can be used to remove the oxide layer and minimize damage to the surface of the substrate 102 .

The method M then executes the cleaning step S16 , including using a cleaning gas to clean the processing area 101 . The cleaning step S16 can be used to remove the volatile by-products after the reaction using chemical etching in the step S14 , for example, the cleaning gas and the volatile by-products are removed by the vacuum pump 120 connected to the substrate processing chamber 100 . The cleaning step S16 can also be used to remove the particles formed after the oxide layer on the surface of the substrate 102 is bombarded when physical etching is used in the step S14.

The method M then performs a deposition process step S18 , such as forming an epitaxial layer on the substrate 102 . After the substrate 102 has gone through one or more oxidation treatment steps S12 and etching treatment steps S14, a harmless and clean surface can be formed on the substrate 102. In this way, high-quality epitaxial layer.

In some other embodiments, in addition to generating ozone, ultraviolet radiation is also commonly used to treat silicon oxide, silicon carbide, or carbon-doped silicon oxide films. For example, in the manufacture of semiconductor devices, chemical vapor deposition methods are often used to deposit materials such as silicon oxide (SiOx), silicon carbide (SiC) and silicon-oxygen-carbon (SiOCx) films as dielectric layers. In some processes, water is formed in the deposition of silicon-oxygen-carbon films when using an organosilane source that includes at least one Si-C bond. This water can be physically absorbed into the film and/or chemically bonded as Si-OH into the deposited film, neither of which is desirable. UV radiation can be used to cure and densify deposited films while reducing the overall thermal budget of individual wafers and speeding up the manufacturing process. In general, increasing the intensity of the UV radiation provides a correspondingly better or faster process. The microwave-generated ultraviolet plasma light source can effectively generate ultraviolet radiation and has good output power.

Then please refer to Figure 3 and Figure 4 at the same time, wherein Figure 3 is a schematic diagram of the appearance of some embodiments of the ultraviolet light source used in the substrate processing chamber in this disclosure, and Figure 4 is along the line segment 4- in Figure 3 4. Sectional view. The ultraviolet light source 200 includes a microwave generator 300 , an ultraviolet lamp 220 , a reflector 230 , a bottom plate 240 , a fan 250 , a heat exchanger 260 , and a casing 270 . The housing 270 is assembled on the bottom plate 240 to define the reaction chamber 210 therein. The microwave generator 300 , the ultraviolet lamp 220 and the reflector 230 are arranged in the reaction chamber 210 defined by the casing 270 and the bottom plate 240 . The fan 250 communicates with the casing 270 to provide cooling gas to the reaction chamber for heat dissipation, and the heat exchanger 260 is connected to the fan 250 to enhance the heat dissipation efficiency of the reaction chamber 210 .

In some embodiments, the ultraviolet light source 200 is used to generate ultraviolet radiation. The ultraviolet light tube 220 can be a mercury microwave arc lamp, a pulsed xenon flash lamp or an ultraviolet light emitting diode array and the like. In some embodiments, the ultraviolet light tube 220 comprises a sealed plasma bulb filled with one or more gases, such as xenon (Xe) or mercury (Hg), and the gas is excited by the microwave generator 300 to generate ultraviolet radiation. For purposes of illustration, the UV lamps 220 are shown as elongated cylindrical bulbs; however, those skilled in the art will readily appreciate that other shapes of UV lamps, such as spherical lamps or arrays of lamps, may also be used. In other embodiments, the ultraviolet light tube 220 may include two or more spaced apart elongated light bulbs. The content of this disclosure is not limited thereto.

The bottom plate 240 isolates the ultraviolet light tube 220 from the processing area 101 (see FIG. 1 ) of the substrate processing chamber 100 below and separates the ultraviolet light generating area from the processing area 101 below. The bottom plate 240 is also used to avoid particle contamination from the substrate 102 during the process, and thereby separate the space to allow cooling of the UV lamp 220 and/or the microwave generator 300 with cooling gas.

In some embodiments, the bottom plate 240 is made of a material with high transmittance to ultraviolet wavelengths, such as transparent quartz material. Alternatively, in other embodiments, other materials may be used for the bottom plate 240 to generate ultraviolet radiation having a different wavelength, such as a wavelength below 220 nm. Base plate 240 may also be coated with an antireflection coating to minimize back reflection of ultraviolet radiation into reflector 230 . For example, the bottom plate 240 can be coated with magnesium fluoride, silicon, fluorine, and other coatings.

The reflector 230 is placed between the ultraviolet light tube 220 and the microwave generator 300 to reflect back the microwave generated above the ultraviolet light tube 220 . The reflector 230 can be used to reflect microwaves back to the area where the ultraviolet lamp 220 is located. In some embodiments, reflector 230 includes a micromesh screen with openings sized such that microwaves are bounced off reflector 230 . In some embodiments, the surface of the reflector 230 facing the UV lamp 220 may be coated with a reflective coating to reflect the ultraviolet radiation generated by the UV lamp 220 toward the bottom plate 240 .

In some embodiments, the reaction chamber 210 defined by the housing 270 and the bottom plate 240 can be further divided into two sub-spaces 212 , 214 by the reflector 230 . The ultraviolet light tube 220 is disposed in the subspace 214 adjacent to the bottom plate 240 , and the microwave generator 300 is disposed in the subspace 212 above the reflector 230 . Microwaves are mainly generated in subspace 212 and ultraviolet radiation is mainly excited in subspace 214 .

In some embodiments, the reflector 230 surrounding the subspace 214 may be provided with a plurality of cooling holes 236 , and a reflective coating may be provided on its inner surface, so as to enhance the heat dissipation efficiency and the light output capability of the ultraviolet light source 200 . The ultraviolet light source 200 may further include a transformer 280 disposed in the subspace 212 and a start bulb 290 (start bulb). The transformer 280 is connected to the microwave generator 300 , and the start bulb 290 is used to induce microwaves to react with the ultraviolet lamp 220 .

In some embodiments, each ultraviolet light source 200 is provided with at least two microwave generators 300 . The radio frequencies of the microwaves generated by the two microwave generators 300 are different. For example, one can generate higher-frequency microwaves, and the other can generate lower-frequency microwaves to jointly excite the ultraviolet light tube 220 .

Next, please refer to FIG. 5 , which is a schematic cross-sectional view of some embodiments of the microwave generator 300 of the present disclosure. The microwave generator 300 includes an outer frame 310 , a core assembly 320 , a cooling fin set 330 , a radio frequency antenna assembly 340 , and a plurality of magnetic elements 350 . The outer bracket 310 is used to fix the core component 320 , the cooling fin set 330 , the RF antenna component 340 , and the magnetic element 350 . The core component 320 includes a coaxial cathode element 322 and an anode element 324 , the anode element 324 is socketed on the cathode element 322 , and the magnetic element 350 is socketed on the cathode element 322 and respectively located at two ends of the anode element 324 . In some embodiments, the number of magnetic elements 350 is two, the two magnetic elements 350 are separated, and the anode element 324 is disposed between the two magnetic elements 350 . Each heat dissipation fin in the heat dissipation fin set 330 extends from one magnetic element 350 to the other magnetic element 350 .

The cooling fin set 330 is disposed around the core component 320 , such as around the anode element 324 . The radio frequency antenna component 340 is connected to one end of the core component 320 , and part of the radio frequency antenna component 340 is exposed from the outer frame 310 . The RF antenna assembly 340 may include a radome and at least one RF antenna disposed in the radome.

The core component 320 has a longitudinal direction D1, and the radio frequency antenna component 340 extends to the outside of the outer bracket 310 along the longitudinal direction D1. In some embodiments, a fan, such as the fan 250 shown in FIG. 3, is arranged on one side of the microwave generator 300 along the longitudinal direction D1 to provide cooling air to the microwave generator 300, thereby bringing When the microwave generator 300 is in operation, a large amount of heat is generated because the core component 320 is connected to high voltage. In the longitudinal direction D1, at least part of the cooling fin set 330 is not covered by the outer support 310, that is, the cooling fin set 330 is at least partially exposed to the outer support 310 in the longitudinal direction D1 to receive the fan. Cooling gas provided.

The cooling fin set 330 is disposed parallel to the longitudinal direction D1 of the core component 320 . In other words, a plurality of closed or semi-closed air passages may be formed between the heat dissipation fins of the heat dissipation fin set 330 , and the axes of these air passages are also parallel to the longitudinal direction D1 of the core component 320 , In this way, the flow direction of the cooling air provided by the fan 250 provided along the longitudinal axis D1 of the core component 320 will be parallel to the axial direction of the air passage of the heat dissipation fin set 330, and the entire heat dissipation fin The surface area of the group 330 can exchange heat with the cooling gas provided by the fan 250, effectively improving the heat dissipation capability of the microwave generator 300, and avoiding the problem that the core component 320 is oxidized and shortened due to long-term operation in a high-temperature environment.

Next, please refer to FIG. 6 to FIG. 10 , which respectively show three-dimensional views of different embodiments of the cooling fin set applied in the microwave generator of the present disclosure. As shown in FIG. 6 , the cooling fin set 330 has a petal-shaped design, which includes an inner ring 332 and a plurality of bent cooling fins 334 connected to the inner ring 332 . The cooling fin set 330 is sleeved on the core component 320 (see FIG. 5 ) through the inner ring 332 , and the inner ring 332 can directly contact the core component 320 for heat exchange. The bent heat dissipation fins 334 are bent in a U-shape, the height h of the heat dissipation fins 334 is between about 22 cm and about 30 cm, and the width w of the heat dissipation fins 334 is between about 16 cm and about 20 cm. , and the radius of curvature r of the U-shaped bend of the heat dissipation fins 334 is between about 3 cm and about 5 cm, the number of U-shaped bent heat dissipation fins 334 in each heat dissipation fin group 330 is About 15 bundles to about 25 bundles. The material of the cooling fin set 334 is preferably a material with high thermal conductivity and easy to be stamped, such as a metal material containing copper or aluminum, so as to quickly remove a large amount of heat generated by the core component 320 during operation.

In the heat dissipation fin group 330, a closed air flow channel CH is defined between each U-shaped bent heat dissipation fin 334 and the inner ring 332. The closed air flow channel CH here refers to the heat dissipation fin 334 and the inner ring 332. The side wall after the connection of the inner ring 332 is a continuous closed shape. The cooling air provided by the fan can enter from one end (such as the upper end) of the closed air channel CH, and after exchanging heat with the cooling fins 334 , exit from the other end (such as the lower end) of the closed air channel CH. During the heat exchange process, the entire side surfaces of the heat dissipation fins 334 can be in contact with the cooling gas, and the surface area of the heat dissipation fins 334 is efficiently utilized.

Take it a step further. According to FIG. 1 and FIGS. 4-6 , the cooling fins 334 in the cooling fin set 330 extend toward the direction of the magnetic element 350 , that is, the cooling fins 334 extend toward the direction of the ultraviolet lamp 220 . The fan 250 , the heat dissipation fins 334 of the heat dissipation fin set 330 , and the ultraviolet light tube 220 are substantially arranged along the longitudinal direction D1 . When the ultraviolet light source 200 is in operation, the fan 250 can provide cooling airflow to the cooling fin set 330 for heat exchange. At this time, one end of the air channel CH in the cooling fin set 330 is used to receive the cooling air flow from the fan 250, One end of the air channel CH is facing the substrate 102 . The flow direction of the cooling airflow provided by the fan 250 is approximately parallel to the longitudinal axis direction D1 of the core component 320, and the cooling fins 334 in the heat dissipation fin set 330 are also approximately parallel to the flow direction of the cooling airflow provided by the fan 250, thereby enhancing the heat dissipation fins. The heat dissipation efficiency of the sheet group 330 . In other embodiments, such as the embodiments shown in FIGS. 7-10 , the extending direction of the heat dissipation fins described therein is substantially the same as that of 334 , so only the changes of the heat dissipation fins are described.

In other embodiments, as shown in FIG. 7, the heat dissipation fin set 400 includes a heat conduction block 410 and a plurality of heat dissipation fins 420, wherein the heat conduction block 410 has a rectangular shape, and there are openings 412 in the heat conduction block 410 for socketing on the core component 320 (see FIG. 5). In some embodiments, the heat conduction block 410 can be in direct contact with the core component 320 for heat exchange. The material of the cooling fin set 400 is preferably a material with high thermal conductivity and easy to be stamped, such as a metal material containing copper or aluminum, so as to quickly remove a large amount of heat generated by the core component 320 during operation.

The heat dissipation fins 420 may be rectangular metal thin plates, and the heat dissipation fins 420 may be arranged on four side surfaces of the heat conduction block 410 , and the heat dissipation fins 420 on the four side surfaces are arranged parallel to each other. The height h of the cooling fins 420 is between about 22 cm and about 30 cm, and the width w of the cooling fins 420 is between about 16 cm and about 20 cm. In some embodiments, the widths of the heat dissipation fins 420 may be the same or different. For example, in some embodiments, the width of at least one heat dissipation fin 420a is smaller than the width of the other heat dissipation fins 420b , these heat dissipation fins 420a with a smaller width are installed inside the outer support 310 (see FIG. 5 ) of the microwave generator 300, while the heat dissipation fins 420b with a larger width extend beyond the outer support 310, To more directly receive the cooling air provided by the fan for heat exchange.

The cooling fins 420 are arranged parallel to the longitudinal axis D1 of the core component 320 to form open air channels CH between the cooling fins 420, that is, these open air channels CH are composed of the heat conducting block 410 and the heat sink. defined by the sidewalls of the fins 420 . Since the extending direction of the air flow channel CH is parallel to the air flow direction of the cooling gas provided by the fan, during the heat exchange, the entire side surface of the cooling fin 420 can be in contact with the cooling gas, and the cooling fin can be efficiently used. 420 surface area.

In some embodiments, these heat dissipation fins 420 are flat plates, but in other embodiments, these heat dissipation fins 420 can be bent or curved, or have microstructures on their surfaces, so as to The surface area of the heat dissipation fins 420 is increased, thereby improving the heat dissipation efficiency of the heat dissipation fins 420 .

Next, referring to FIG. 8 , the cooling fin set 500 includes an inner ring 510 and a plurality of cooling fins 520 radially connected to the inner ring 510 . The cooling fin set 500 is sleeved on the core component 320 (see FIG. 5 ) through the inner ring 510 , and the inner ring 510 can directly contact the core component 320 for heat exchange. The material of the cooling fin set 500 is preferably a material with high thermal conductivity and easy to be stamped, such as a metal material containing copper or aluminum, so as to quickly remove a large amount of heat generated by the core component 320 during operation.

In this embodiment, the heat dissipating fins 520 are dovetail-shaped metal plates, such as thin metal sheets with forked ends. For example, each cooling fin 520 has an opposite first end 522 and a second end 524, the first end 522 of the cooling fin 520 is connected to the inner ring 510, and the second end 524 of the cooling fin 520 has a branch . In other words, the second end 524 of the heat dissipation fin 520 has a first sub-section 5242 and a second sub-section 5244 , and the first sub-section 5242 and the second sub-section 5244 respectively extend in different directions.

In some embodiments, the height h of the cooling fins 520 is between about 22 cm and about 30 cm, the width w of the cooling fins 520 is between about 16 cm and about 20 cm, and the first sub-portion 5242 and the second The angle subtended by the subsections 5244 is an acute angle.

In some embodiments, an air flow channel CH is formed between adjacent heat dissipation fins 520 , and a secondary air flow channel CH′ is also formed between the first sub-section 5242 and the second sub-section 5244 of each heat dissipation fin 520 . Since the extension directions of the air channel CH and the secondary air channel CH' are parallel to the airflow direction of the cooling gas provided by the fan, during the heat exchange process, the entire side surface of the cooling fin 520 can be in contact with the cooling gas. , effectively utilizing the surface area of the heat dissipation fins 520 . The first sub-section 5242 and the second sub-section 5244 of the heat dissipation fin 520 further increase the surface area of the heat dissipation fin 520 , thereby improving the heat exchange efficiency of the heat dissipation fin 520 .

Referring to FIG. 9 , the heat dissipation fin set 600 includes a plurality of heat dissipation fins 610 and a water cooling pipe 620 for connecting the heat dissipation fins 610 . The cooling fins 610 are arranged radially, and the water cooling pipe 620 passes through each cooling fin 610 to connect the cooling fins 610 in series. One end of the fin 610 closer to the center may directly contact the core component 320 (see FIG. 5 ) or be adjacent to the core component 320 for heat exchange. The heat dissipation fins 610 can be metal flat plates, and are arranged parallel to the longitudinal axis direction D1 (see FIG. 5 ) of the core component 320. In this way, the air flow channel CH formed between the heat dissipation fins 610 is also parallel to the The airflow direction of the cooling air provided by the fan.

In some embodiments, the water-cooling pipe 620 is a hollow tubular structure with condensed fluid inside, and the condensed fluid flows through the hollow tubular structure to facilitate heat dissipation. In some embodiments, capillaries may be further provided in the hollow tubular structure to further enhance the return velocity of the condensed fluid to the hollow tubular structure. In some embodiments, the water-cooling pipe 620 is further connected to a fluid joint, which is connected to a pump for introducing external condensed fluid into the hollow tubular structure and leading out the condensed fluid in the hollow tubular structure.

In some embodiments, the water-cooling pipe 620 may be helically arranged along the longitudinal direction D1 of the core assembly 320 so as to surround the periphery of the core assembly 320 along the longitudinal direction D1 and provide a circulation path for the condensed fluid to Help the core component 320 and the cooling fins 610 to dissipate heat. In some embodiments, the water-cooling pipe 620 may include a hollow pipe made of copper, and the condensed fluid flowing in the hollow pipe may be water.

Referring to FIG. 10 , in other embodiments, the heat dissipation fin set 700 includes a plurality of heat dissipation fins 710 and a water cooling pipe 720 for connecting the heat dissipation fins 710 . The cooling fins 710 are arranged radially, and the water-cooling pipe 720 passes through each cooling fin 710 in a spiral shape, so as to connect the cooling fins 710 in series. The difference from the heat dissipation fin set 600 in FIG. 9 is that the heat dissipation fin set 700 includes a plurality of heat dissipation fins 710, and the shape of these heat dissipation fins 710 is not limited to a flat plate shape, which may have a folded surface or a curved surface. , or, the shape of the cooling fins 710 may be a corrugated plate shape. However, these cooling fins 710 are still arranged parallel to the longitudinal axis direction D1 (see FIG. 5 ) of the core component 320, so that the air flow channel CH formed between the cooling fins 710 is also parallel to the cooling gas provided by the fan. direction of airflow.

The heat dissipation fins in the microwave generator provided by the present disclosure are arranged parallel to the longitudinal axis of the core component, so that when the cooling air flow flows from one end of the microwave generator to the other end, the cooling air flow can be in contact with the heat dissipation fins. Heat exchange is performed on the side surfaces to increase the heat dissipation efficiency of the microwave generator.

According to some embodiments of the present disclosure, a microwave generator includes a core component, a first magnetic element, a second magnetic element, and a heat sink. The core component includes a first electrode element and a second electrode element sleeved on the first electrode element. The first magnetic element is sleeved on the first electrode element, and the second magnetic element is sleeved on the first electrode element and separated from the first magnetic element. The second electrode element is located between the first magnetic element and the second magnetic element. The heat dissipation element includes at least one heat dissipation fin, and the heat dissipation fin extends toward the second magnetic element. In some embodiments, the heat sink includes an inner ring, and the heat sink fins are U-shaped bent heat sinks connected to the inner ring. In some embodiments, the heat sink includes an inner ring, and the heat sink fins are fins with forked ends connected to the inner ring. In some embodiments, the heat dissipation element includes a heat dissipation block sleeved on the second electrode assembly, and the heat dissipation fins are connected to the heat dissipation block. In some embodiments, the at least one heat dissipation fin includes a first heat dissipation fin and a second heat dissipation fin, and the first heat dissipation fin and the second heat dissipation fin have different widths.

According to some other embodiments of the present disclosure, an ultraviolet light source includes an ultraviolet light tube, a fan, at least one microwave generator, and a reflector. The fan is arranged above the ultraviolet lamp tube, and the microwave generator is arranged between the ultraviolet lamp tube and the fan, wherein the microwave generator includes at least one cooling fin, and the cooling fin extends toward the ultraviolet lamp tube. The reflector is arranged between the microwave generator and the ultraviolet light tube. In some embodiments, the microwave generator further includes a water-cooling pipe, and the water-cooling pipe passes through the cooling fins. In some embodiments, the at least one microwave generator includes a first microwave generator and a second microwave generator, and the first microwave generator and the second microwave generator are used to generate different microwave radio frequencies.

According to still other embodiments of the present disclosure, a substrate processing method includes exposing oxygen to ultraviolet radiation generated by an ultraviolet light source to form ozone in a processing region, and then exposing the substrate to the ozone to form ozone on the surface of the substrate. The oxide layer provides air flow through the heat sink of the ultraviolet light source for heat exchange, wherein the heat sink includes at least one air flow channel, one end of the air flow channel faces the substrate, and then performs an etching step to remove the oxide on the surface of the substrate Floor. In some embodiments, the substrate processing method further includes forming an epitaxial layer on the substrate after the etching step.

The features of several embodiments or examples are summarized above, so that those skilled in the art can better understand aspects of some embodiments of the present disclosure. Those skilled in the art should appreciate that some embodiments of the present disclosure can be readily used as a basis for designing or modifying other processes and structures in order to achieve the same purpose and/or achieve the same advantages of the embodiments or examples described herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of some embodiments of the present disclosure, and that the present invention can be produced without departing from the spirit and scope of some embodiments of the present disclosure. Variations, Substitutions and Modifications.

100: substrate processing chamber 101: Processing area 102: Substrate 110: Chamber base 112: chamber wall 114: Chamber cover 116: Shield 120: Vacuum pump 122: Throttle valve 130: RF Source Assembly 132: RF Generator 134: RF matching circuit 136: Coil 140: Gas delivery system 150: Substrate support assembly 152: Substrate support 154: Temperature controller 156: RF Generator 200: UV light source 210: reaction chamber 212,214: Subspace 220: UV lamp 230: reflector 240: Bottom plate 250: fan 260: heat exchanger 270: Shell 280: Transformer 290: Start Bulb 300: microwave generator 310: Outer Bracket 320: Core Components 322: Cathode element 324: Anode element 330: Cooling fin set 332: inner ring 334: Heat sink fins 340: RF Antenna Assembly 350: Magnetic components 400: Cooling fin set 410: Heat conduction block 412: Opening 420, 420a, 420b: cooling fins 500: Cooling fin set 510: inner circle 520: Cooling fins 522: first end 524: second end 5242: First Subdivision 5244: Second Subdivision 600: Cooling fin set 610: Cooling fins 620: Water cooling pipe 700: Cooling fin set 710: Cooling fins 720: Water cooling pipes h: height w: width r: radius of curvature CH: air channel CH’: secondary air channel D1: longitudinal axis direction M: Method S10, S12, S14, S16, S18: steps

Some embodiments of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a cross-sectional view of some embodiments of a substrate processing chamber of the present disclosure. FIG. 2 is a flowchart of some embodiments of a method for cleaning a semiconductor substrate of the present disclosure. FIG. 3 is a schematic view of the appearance of some embodiments of the ultraviolet light source used in the substrate processing chamber in the present disclosure. Figure 4 is a cross-sectional view along line 4-4 in Figure 3. FIG. 5 is a schematic cross-sectional view of some embodiments of the microwave generator of the present disclosure. FIG. 6 to FIG. 10 respectively show three-dimensional views of different embodiments of the cooling fin set applied in the microwave generator of the present disclosure.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

250: fan 300: microwave generator 310: Outer Bracket 320: Core Components 322: Cathode element 324: Anode element 330: Cooling fin set 340: RF Antenna Assembly 350: Magnetic components D1: longitudinal axis direction

Claims (10)

A microwave generator, comprising: a core component, the core component comprising: a first electrode element; and a second electrode element, socketed on the first electrode element; a first magnetic element, socketed on the first An electrode element; a second magnetic element, sleeved on the first electrode element and separated from the first magnetic element, the second electrode element is located between the first magnetic element and the second magnetic element; and a heat dissipation A component includes at least one heat dissipation fin, and the at least one heat dissipation fin extends toward the second magnetic element. The microwave generator as claimed in claim 1, wherein the heat sink includes an inner ring, and the at least one heat sink fin is a U-shaped bent heat sink connected to the inner ring. The microwave generator as claimed in claim 1, wherein the heat sink includes an inner ring, and the at least one heat sink fin is a heat sink with branched ends and is connected to the inner ring. The microwave generator according to claim 1, wherein the heat dissipation element includes a heat dissipation block sleeved on the second electrode element, and the at least one heat dissipation fin is connected to the heat dissipation block. The microwave generator as claimed in claim 4, wherein the at least one heat dissipation fin includes a first heat dissipation fin and a second heat dissipation fin, and the first heat dissipation fin and the second heat dissipation fin have different widths . An ultraviolet light source, comprising: an ultraviolet light tube; a fan disposed above the ultraviolet light tube; at least one microwave generator as described in any one of claims 1 to 5, disposed on the ultraviolet light tube Between the fan, wherein the microwave generator includes at least one heat dissipation fin, and the at least one heat dissipation fin extends towards the ultraviolet light tube; and a reflector is arranged between the microwave generator and the ultraviolet light tube between. The ultraviolet light source as described in claim 6, wherein the microwave generator further includes a water-cooling pipe, and the water-cooling pipe passes through the at least one cooling fin. The ultraviolet light source as described in Claim 6, wherein the at least one microwave generator includes a first microwave generator and a second microwave generator, the first microwave generator and the second microwave generator are used to generate different microwaves radio frequency. A substrate processing method, comprising: exposing oxygen to the ultraviolet light generated by the ultraviolet light source as described in claim 6 irradiating external light to form ozone in a treatment area; exposing a substrate to the ozone to form an oxide layer on the surface of the substrate; providing an airflow through a heat sink of the ultraviolet light source for heat exchange , wherein the heat sink includes at least one air channel, one end of the air channel faces the substrate; and an etching step is performed to remove the oxide layer on the surface of the substrate. The substrate processing method according to claim 9, further comprising forming an epitaxial layer on the substrate after the etching step.

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