TWI784239B - SILICON CARBIDE (SiC) PREPARATION SYSTEM AND METHOD THEREOF BY COMBINING ECO-CARBON BLACK WITH SILICON SOURCES - Google Patents

Abstract

A silicon carbide (SiC) preparation method includes: purification a carbon black material to obtain a purified carbon black material; mechanically milling the purified carbon black material to obtain a carbon black powder; mechanically milling a silicon source material to obtain a silicon source powder; and reacting the carbon black powder and the silicon source powder with a carbonthermal reduction process to obtain a silicon carbide material.

Description

System and method for preparing silicon carbide with environmentally friendly carbon black combined with silicon source

The present invention relates to a system and method for preparing silicon carbide (SiC) by combining eco-carbon black (eco-carbon black) with silicon sources (silicon sources); Nano-scale silicon carbide system and its method; more particularly, a silicon carbide system and method for preparing silicon carbide by combining carbon black from environmentally friendly recycled waste tires with a silicon source.

Conventional silicon carbide recovery methods, such as the invention patent of the Republic of China Patent Announcement No. TW-I629241 "Method for Recycling Waste Materials to Obtain Silicon Carbide and Use in Smelting", discloses a method for recycling waste materials to obtain silicon carbide and use it in smelting. The method for obtaining silicon carbide from recycled waste and using it for smelting comprises: a recycling processing step, a pretreatment step, an adding step, a refining step and a casting step.

As mentioned above, the recycling processing step of the aforementioned TW-I629241 recycles a waste material and grinds the waste material into a powder containing silicon carbide; the pretreatment step puts a smelting raw material into a smelting equipment and heats it Melting the smelting raw material; adding the silicon carbide-containing powder into the molten raw material, and blending the silicon carbide-containing powder and the molten raw material.

Continuing from the above, the refining step of the aforementioned TW-I629241 uses an oxidation temperature to heat the powder containing silicon carbide and the molten raw material, so that the The molten raw material produces a gas element and an impurity to form a molten raw material from which the gas element and impurity have been removed; the casting step casts the molten raw material from which the gas element and impurity have been removed into a steel billet.

Another conventional silicon carbide recovery method, such as the invention patent of "Method of Recovering Silicon and Silicon Carbide from Silicon Sludge" in the Republic of China Patent Announcement No. TW-I614212, discloses a method of recovering silicon from silicon sludge, silicon carbide and silicon purification . The method for recovering silicon, silicon carbide and silicon purification from silicon mud: first, rapidly melting several silicon powders to form several molten silicon droplets, and several silicon carbide powders are on the surface of the several molten silicon droplets or inside.

Continuing from the aforementioned TW-I614212, the method for recovering silicon from silicon mud, silicon carbide and silicon purification: Next, control a cooling rate so that the several molten silicon droplets are solidified to form several silicon particles, And discharge a silicon carbide and a residual impurity to the surface of the silicon particle; then, use a pickling and sieving process to separate the silicon carbide and the residual impurity from the silicon carbide.

Another conventional method for preparing silicon carbide, such as the Chinese Patent Publication No. CN-108529630 "A Method for Preparing Silicon Carbide by Internal Heat Method", discloses a method for preparing silicon carbide by internal heat method. The method for preparing silicon carbide by internal heat method includes: pretreating a crystalline silicon cutting waste; mixing a carbon source, a binder, water and a pretreated crystalline silicon cutting waste to obtain a mixture material, and the mixed material is press-molded to obtain a pellet, and then the pellet is dried to obtain a dried pellet.

As mentioned above, the method for preparing silicon carbide by the internal heat method of the aforementioned No. CN-108529630 further includes: placing the dried pellets in a reaction furnace; using the reaction furnace to heat and keep the temperature at a predetermined temperature, and heat preservation A silicon carbide crystal block is obtained; the silicon carbide crystal block is crushed to obtain an α-silicon carbide powder.

Another conventional method for preparing silicon carbide, such as the Chinese Patent Publication No. CN-109721363 "A Method for Preparing SiC/B ₄ C Composite Ceramic Powder in Situ by Adding Carbonized Rice Husk", discloses a method for preparing SiC/B 4 C composite ceramic powder. B ₄ C composite ceramic powder method. The method for preparing SiC/B ₄ C composite ceramic powder: firstly, a carbonaceous reducing agent and a carbonized rice husk are crushed to form a crushed carbonaceous reducing agent powder.

Inheritance, the method for preparing SiC/B ₄ C composite ceramic powder of the aforementioned CN-109721363: mix the crushed carbonaceous reducing agent powder, boric acid powder and carbonized rice husk powder in a predetermined proportion processing, mixing the crushed carbonaceous reducing agent powder, boric acid powder and carbonized rice husk powder, and further pressing to form a pellet, and then drying the pellet.

On top of that, the method for preparing SiC/B ₄ C composite ceramic powder of the aforementioned CN-109721363: put the green body into an induction furnace for high-temperature smelting to prepare a boron carbide composite ceramic powder; compound the boron carbide The coarse ceramic powder is crushed to obtain a fine powder and a slag powder, and the fine powder and slag powder are classified and removed; the slag powder is recycled and reused, and the fine powder is used to manufacture a boron carbide composite Raw materials for ceramic sintering.

Another conventional method for preparing silicon carbide, such as the Chinese Patent Publication No. CN-102815700 "A Method for Recycling Silicon Cutting Waste to Prepare Nano-Silicon Carbide", discloses a method for recycling silicon cutting waste to prepare nano-SiC. The method for preparing nano-silicon carbide: firstly, crushing a recycled silicon waste to obtain a recycled silicon waste powder; cleaning the recycled silicon waste powder with a cleaning agent, and the cleaning agent is water, hydrochloric acid and peroxide Hydrogen mixed aqueous solution, hydrofluoric acid aqueous solution, ammonia water and ethanol aqueous solution.

Continuing from the above, the method for preparing nano-silicon carbide in the aforementioned CN-102815700: After drying the recovered silicon waste powder, obtain a dried and recovered silicon waste powder; place the dried and recovered silicon waste powder in a graphite Crucible, and calcined at 1600°C in a vacuum electric furnace or a hydrogen protection electric furnace for 3 Hours to 5 hours, you can get a nano-silicon carbide. The nano silicon carbide has a diameter of about 20nm to 50nm, a length of about 4 μm to 5 μm, and an aspect ratio higher than 20.

Another conventional method for preparing silicon carbide, such as the invention patent application of Chinese Patent Publication No. CN-109734098 "Method for Preparing Nano-Silicon Carbide from Diamond Wire Cutting Waste of Crystalline Silicon", discloses a diamond wire cutting waste of crystalline silicon A method for preparing nano-silicon carbide. The method for preparing nano-silicon carbide: firstly, directly mix an organic carbonaceous reducing agent in a crystalline silicon diamond wire cutting waste; then, obtain a nano-silicon carbide through a carbothermal reduction under normal pressure.

Another conventional method for preparing silicon carbide materials, such as the invention patent of "a rice husk-based porous silicon carbide ceramic material and its preparation method" in Chinese Patent Announcement No. CN-106316447, discloses a rice husk-based porous silicon carbide ceramic material and its preparation method. The rice husk-based porous silicon carbide ceramic material is mainly made of a rice husk and a mixture.

Continuing from the above, the rice husk of the aforementioned CN-106316447 is an agricultural waste rice husk, and the mass of the mixture is 30% to 70% of the mass of the rice husk. The mixture contains: 1% to 30% of silicon powder; 5% to 40% of carbon source; 1% to 15% of catalyst; 30% to 75% of binder.

Another conventional silicon waste treatment method, such as the invention patent of "Silicon Wafer Cutting Waste Treatment Method" in the Republic of China Patent Publication No. TW-I421930, discloses a silicon wafer cutting waste treatment method. The processing method of the silicon wafer cutting waste: firstly, a silicon wafer cutting waste is divided into a liquid mixture and a solid mixture by a solid-liquid separation method, and then the liquid mixture is evaporated and concentrated to obtain a cutting liquid.

As mentioned above, the method for processing the silicon wafer cutting waste of the aforementioned TW-I421930: Next, mix a first aqueous solvent with the solid mixture, and use a hydrocyclone to mix the first aqueous solvent and the solid mixture. The mixture is separated and divided into a silicon-containing mixture and a silicon carbide-containing The mixture; finally, after a pickling and/or alkaline washing step to obtain silicon and silicon carbide.

However, the aforementioned ROC Patent Announcements No. TW-I629241 and No. TW-I614212 disclose silicon carbide recovery methods, Chinese Patent Publications No. CN-108529630, No. CN-109721363, No. CN-102815700, and No. CN-109734098 And the method for preparing silicon carbide in Chinese Patent Announcement No. CN-106316447 and the silicon waste treatment method in Patent Announcement No. TW-I421930 of the Republic of China must be further improved to further meet the needs of upgrading technology.

The aforementioned Republic of China Patent Announcement No. TW-I629241, No. TW-I614212, Chinese Patent Publication No. CN-108529630, No. CN-109721363, No. CN-102815700, No. CN-109734098 and Chinese Patent Announcement No. CN- No. 106316447 and the Republic of China Patent Announcement No. TW-I421930 patent and patent application are only references to the technical background of the present invention and descriptions of the current state of technological development, and are not intended to limit the scope of the present invention.

In view of this, in order to meet the above technical problems and needs, the present invention provides a system and method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources, which purifies a carbon black material to obtain a purified carbon black material , and the purified carbon black material is mechanically ground to obtain a carbon black powder, and a silicon source material is mechanically ground to obtain a silicon source powder, and then the carbon black powder and the silicon source powder are used as The carbothermal reduction method reacts to form a silicon carbide material. Therefore, compared with the conventional preparation of silicon carbide materials, its resource recovery and reuse efficiency can be greatly improved, and the quality of its silicon carbide can be improved.

The main purpose of the present invention is to provide a system and method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources, which purifies a carbon black material to obtain a purified carbon black material, and purifies the purified carbon black material The material is mechanically ground to obtain a carbon black powder, and a silicon source material is mechanically ground to obtain a silicon source powder, and then the carbon black powder and the silicon source powder are reacted by carbothermal reduction, so that Form a silicon carbide material to achieve the purpose and effect of improving its resource recovery and reuse efficiency and the quality of silicon carbide.

In order to achieve the above-mentioned purpose, the method for preparing silicon carbide by combining environmentally friendly carbon black with silicon source in a preferred embodiment of the present invention includes:

Purifying a carbon black material to obtain a purified carbon black material;

Mechanically grinding the purified carbon black material to obtain a carbon black powder;

Mechanically grinding a silicon source material to obtain a silicon source powder; and

The carbon black powder and silicon source powder are reacted by carbothermal reduction method to form a silicon carbide material.

In order to achieve the above-mentioned purpose, the method for preparing silicon carbide by combining environmentally friendly carbon black with silicon source in a preferred embodiment of the present invention includes:

Mechanically grinding a silicon source material to obtain a silicon source powder;

Purifying a carbon black material to obtain a purified carbon black material;

subjecting the purified carbon black material to mechanical grinding to obtain a carbon black powder; and

The carbon black powder and silicon source powder are reacted by carbothermal reduction method to form a silicon carbide material.

The carbon black powder and the silicon source powder in the preferred embodiment of the present invention adopt a carbothermal reduction temperature to react by carbothermal reduction method, and the carbothermal reduction temperature is 1400°C to 1700°C.

This carbon black material of preferred embodiment of the present invention selects to reclaim from A waste tire material or an electronic waste material.

The silicon source material in the preferred embodiment of the present invention is selected from a waste rice material, a waste glass material or a low-pollution soil material.

In the preferred embodiment of the present invention, when the purified carbon black material and the silicon source material are mechanically ground, at least one grinding solution is optionally added, and the grinding solution is selected from an ethanol solution or a solution containing ethanol.

In order to achieve the above objectives, the preferred embodiment of the present invention uses environmentally friendly carbon black combined with a silicon source to prepare silicon carbide system including:

at least one purification unit, which is used to purify a carbon black material to obtain a purified carbon black material;

at least one grinding unit, which is used to mechanically grind the purified carbon black material to obtain a carbon black powder, and mechanically grind a silicon source material to obtain a silicon source powder; and

at least one thermal activation unit for containing the carbon black powder and silicon source powder;

Wherein the carbon black powder and the silicon source powder are reacted in the thermal activation unit by carbothermal reduction method to form a silicon carbide material.

The purification unit of a preferred embodiment of the present invention is selected from an acid purification unit, an alkali purification unit or an acid/alkali purification unit.

The grinding unit of the preferred embodiment of the present invention is selected from a mechanical grinding device or a ball mill device.

The thermal activation unit of the preferred embodiment of the present invention is selected from a high temperature furnace or a horizontal tubular high temperature furnace.

The grinding unit and thermally activated unit in a preferred embodiment of the present invention are combined to form a mechanically and thermally activated integrated unit.

In order to achieve the above purpose, the preferred embodiment of the present invention uses environmentally friendly carbon black combined with silicon sources to prepare silicon carbide materials including:

An environmentally friendly silicon carbide material, which includes:

At least one carbon black powder, which is purified from a carbon black material processing to obtain a purified carbon black material, and mechanically grinding the purified carbon black material to obtain the carbon black powder; and

At least one silicon source powder, which is obtained by mechanically grinding a silicon source material to obtain the silicon source powder;

The carbon black powder and silicon source powder are adjusted to form a configuration ratio, and the carbon black powder and silicon source powder are reacted by carbothermal reduction to form a silicon carbide material.

The configuration ratio of the carbon black powder and the silicon source powder in the preferred embodiment of the present invention is between 2:1 and 9:1.

In order to achieve the above-mentioned purpose, another preferred embodiment of the present invention uses environmentally friendly carbon black combined with silicon sources to prepare silicon carbide materials including:

An environmentally friendly nano-scale silicon carbide material, which includes:

At least one nano-scale carbon black powder, which is purified by a carbon black material to obtain a purified carbon black material, and the purified carbon black material is subjected to nano-scale mechanical grinding to obtain the nano-scale grade carbon black powder; and

at least one nanoscale silicon source powder, which is obtained by subjecting a silicon source material to nanoscale mechanical grinding to obtain the nanoscale silicon source powder;

Wherein the nanoscale carbon black powder and nanoscale silicon source powder are adjusted to form a configuration ratio, and the nanoscale carbon black powder and nanoscale silicon source powder are reacted by carbothermal reduction to form a Nano-scale silicon carbide materials.

The nanoscale carbon black powder in the preferred embodiment of the present invention is selected from waste tires of different brands.

The nanoscale silicon carbide material in a preferred embodiment of the present invention has a tetrahedral structure.

1: carbon black material

1a: Purified carbon black material

10: carbon black powder

10a: Nanoscale carbon black powder

2: Silicon source material

20: Silicon source powder

20a: Nanoscale silicon source powder

3: Silicon carbide material

3a: Nano-scale silicon carbide material

41:Purification unit

42: Grinding unit

43: Thermal activation unit

100: carbon atom

101:Silicon atom

Figure 1: Preparation of environmental protection carbon black combined with silicon source in a preferred embodiment of the present invention A schematic block diagram of environmentally friendly SiC materials produced by the SiC system.

Figure 2: A schematic diagram of a silicon carbide system using environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention.

Figure 3: Schematic flow chart of the method for preparing silicon carbide using environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention.

Figure 4: A schematic diagram of the molecular structure of the environmentally friendly silicon carbide material produced by the silicon carbide system using environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention.

Fig. 5: Schematic flow chart of another preferred embodiment of the present invention, a method for preparing silicon carbide by combining environmentally friendly carbon black with a silicon source.

Figure 6: A schematic block diagram of an environmentally friendly silicon carbide material produced by the silicon carbide system using environmentally friendly carbon black combined with silicon sources in another preferred embodiment of the present invention.

In order to fully understand the present invention, preferred embodiments will be described below in detail together with the accompanying drawings, which are not intended to limit the present invention.

The system and method for preparing silicon carbide by combining environmental-friendly carbon black with silicon source in the preferred embodiment of the present invention can be applied to various environmental-friendly carbon black-related technical fields, which do not depart from the spirit and technical scope of the present invention. The carbon black material and silicon source material used in the preferred embodiment of the present invention using environmentally friendly carbon black combined with silicon source to prepare silicon carbide system and method can be widely obtained from environmentally friendly recycled materials and related preparation technologies, but it is not intended to limit the present invention. scope of the invention.

The preferred embodiment of the present invention uses environment-friendly carbon black combined with silicon source to prepare silicon carbide system and method to manufacture silicon carbide materials, which can be applied to high temperature turbine [turbine], automobile engine [automobile engine], field emission display device [field emission display device] ], nanosensor [nanosensor], nanoscale electronic device [nano-scale electronic device], light emitting device [light emitting device], biological label [bio-label] or other related products, but it is not intended to limit this Invented application range.

Figure 1 shows a schematic block diagram of an environmentally friendly silicon carbide material produced by a silicon carbide system using environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention. Please refer to Figure 1, the environmentally friendly silicon carbide material of the preferred embodiment of the present invention includes at least one carbon black material [carbon black material] 1 and at least one silicon source material [silicon material] 2, and the carbon black material 1 And the silicon source material 2 is made into at least one silicon carbide material [SiC material] 3 by appropriate technical means.

Please refer to Figure 1 again. For example, the carbon black material 1 can be selected to be recycled from a waste tire material, an electronic waste material (for example: waste optical discs) or related carbon black materials obtained from waste , and the silicon source material 2 can be recycled from a waste rice material, a waste glass material, a low-pollution soil material or related recycled silicon source materials.

Figure 2 shows a schematic diagram of a silicon carbide system using environmentally friendly carbon black combined with a silicon source in a preferred embodiment of the present invention. Please refer to Fig. 2, the preferred embodiment of the present invention uses environment-friendly carbon black combined with silicon source to prepare silicon carbide system comprising at least one purification unit [purification unit] 41, at least one grinding unit [milling unit] 42 and at least one thermal Activation unit [thermal activation unit] 43.

Please refer to Fig. 2 again, for example, the purification unit 41 can be selected to assemble at least one carbon black supply unit [not shown] or a device with similar carbon black supply function, and the purification unit 41 can be selected from An acid (acid) purification device, a base (base) purification device, an acid/base purification device or any combination thereof.

Please refer to Fig. 2 again, for example, the grinding unit 42 can be optionally connected to the purification unit 41, or the grinding unit 42 can be optionally equipped with at least one silicon source supply unit (not shown) or a similar silicon source The device that supplies the function, and the grinding unit 42 can be selected from a mechanical grinding device, a ball milling device (ball milling device) or a device with similar mechanical grinding function place.

Please refer to Fig. 2 again, for example, the thermal activation unit 43 can be selectively connected to the grinding unit 42, and the thermal activation unit 43 can be selected from a high-temperature furnace or a horizontal tubular high-temperature furnace [horizontal tubular furnace ]. In another preferred embodiment of the present invention, the grinding unit 42 and the thermal activation unit 43 can be optionally combined to form a mechanical and thermal activation integrated unit.

Fig. 3 shows a schematic diagram of a method for preparing silicon carbide using environmentally friendly carbon black combined with a silicon source according to a preferred embodiment of the present invention. Please refer to Figures 1, 2 and 3, the preferred embodiment of the present invention uses environmentally friendly carbon black combined with a silicon source to prepare silicon carbide. The method includes step S1: first, for example, the carbon black material 1 with appropriate technical means In the purification unit 41, purification (for example: first acid purification and then alkali purification or first alkali purification and then acid purification) is performed to obtain the purified carbon black material 1a.

Please refer to Figures 1, 2 and 3 again. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S2: then, for example, the purified carbon The black material 1a is mechanically milled in the grinding unit 42 for a predetermined time (for example: about 30 minutes) to disperse the particles, so as to obtain a carbon black powder 10 .

Please refer to Figures 1, 2 and 3 again. For example, when the purified carbon black material 1a is subjected to mechanical grinding, at least one grinding solution (milling solvent) can be selected, and the grinding solution is selected from a Ethanol (alcohol) solution, a solution containing ethanol or a volatile solution, but it is not intended to limit the scope of the present invention.

Please refer to Figures 1, 2 and 3 again. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S3: Then, for example, the silicon source material is prepared by appropriate technical means 2 Perform mechanical grinding in the grinding unit 42 for a predetermined time (for example: about 30 minutes) to disperse the particles, so as to obtain a silicon source powder 20.

Please refer to Figures 1, 2 and 3. For example, when the silicon source material 20 is subjected to mechanical grinding, at least one grinding solution can be selected from an ethanol solution, an ethanol-containing solution, and an ethanol solution. A solution or a volatile solution, but it is not intended to limit the scope of the present invention.

Please refer to Figures 1, 2 and 3 again. The method for preparing silicon carbide with environmentally friendly carbon black in combination with silicon sources in a preferred embodiment of the present invention includes step S4: Then, for example, the carbon black powder is powdered by appropriate technical means 10 and the silicon source powder 20 react in the thermal activation unit 43 for a predetermined time (for example: 2 hours to 6 hours or other time) by a carbonthermal reduction process to form the silicon carbide material 3 .

Preferred embodiment of the present invention adopts each reaction of carbothermal reduction method as follows:

SiO _2(s) +3C _(s) → SiC _(s) +2CO _(g) (1)

SiO _2(s) +2C _(s) → Si _(s) +2CO _(g) (2)

SiO _2(s) +C _(s) → SiC _(s) +CO _(g) (3)

Please refer to Figures 1, 2 and 3 again. For example, the method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention can choose to use an appropriate heating rate to form a heating mode for carbon Thermal reduction method, or select an appropriate heating rate to form a constant temperature mode for carbothermal reduction method.

Please refer to Figures 1, 2 and 3 again. For example, the carbon black powder 10 and silicon source powder 20 in another preferred embodiment of the present invention have a molar ratio of 2:1. Up to 9:1 or other ratio ranges, for example: 3:1 yield can be better than 2:1, like choosing to configure the ratio range of SiO ₂ :C, but it is not intended to limit the scope of the present invention.

Please refer to Figures 1, 2 and 3 again. For example, the carbon black powder 10 and the silicon source powder 20 of another preferred embodiment of the present invention adopt a carbothermic reduction temperature so as to carry out carbothermic reduction. reaction, and the carbothermal reduction temperature is 1400°C to 1700°C or other suitable temperature range, but it does not It is not intended to limit the scope of the present invention.

Fig. 4 shows a schematic diagram of the molecular structure of the environmentally friendly silicon carbide material produced by the silicon carbide system using environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention. Please refer to Figure 4, for example, the molecular structure of the environmentally friendly silicon carbide material of the preferred embodiment of the present invention includes one carbon atom 100 and four silicon atoms 101, and has one carbon atom 100 combined with three of the bottom plane A silicon atom 101, and the carbon atom 100 is combined with another silicon atom 101 by a single bond, so that the silicon carbide material 3 has a tetrahedral structure.

Fig. 5 shows a schematic diagram of another preferred embodiment of the present invention, a method for preparing silicon carbide by combining environmentally friendly carbon black with a silicon source. Please refer to Figures 1, 2, and 5. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S1: first, for example, use the silicon source material 2 by appropriate technical means. Mechanical grinding is performed in the grinding unit 42 to obtain a silicon source powder 20 .

Please refer to Figures 1, 2 and 5 again. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S2: Then, for example, the carbon black material is prepared by appropriate technical means 1. Perform purification treatment in the purification unit 41 to obtain the purified carbon black material 1a or a nanoscale material.

Please refer to Figures 1, 2 and 5 again. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S3: then, for example, the purified carbon The black material 1a is mechanically ground in the grinding unit 42 to obtain a carbon black powder 10 or a nanoscale material.

Please refer to Figures 1, 2 and 5 again. The method for preparing silicon carbide with environmentally friendly carbon black combined with silicon sources in a preferred embodiment of the present invention includes step S4: then, for example, the carbon black powder is powdered by appropriate technical means 10 and silicon source powder 20 are reacted in the thermal activation unit 43 by carbothermal reduction method. time [for example: 2 hours to 6 hours or other time], so as to form the silicon carbide material 3 or a nanoscale material.

Fig. 6 shows a schematic block diagram of an environmentally friendly silicon carbide material produced by a silicon carbide system using environmentally friendly carbon black combined with a silicon source according to another preferred embodiment of the present invention. Please refer to shown in Figure 6, the environmentally friendly silicon carbide material of another preferred embodiment of the present invention includes at least one carbon black material 1 and at least one silicon source material 2, and the carbon black material 1 and silicon source material 2 are mechanically processed Grinding treatment to obtain a nano-scale carbon black powder 10a and a nano-scale silicon source powder 20a, and the nano-scale carbon black powder 10a and nano-scale silicon source powder 20a are made into at least one nanometer by appropriate technical means Meter-scale silicon carbide material 3a.

The above-mentioned preferred embodiments only illustrate the present invention and its technical characteristics, and the technology of this embodiment can still be implemented in various substantially equivalent modifications and/or replacements; therefore, the scope of rights of the present invention depends on the appended patent application The scope defined by the scope shall prevail. The copyright in this case is restricted to be used for patent applications in the Republic of China.

1: carbon black material

1a: Purified carbon black material

10: carbon black powder

2: Silicon source material

20: Silicon source powder

3: Silicon carbide material

Claims (10)

A method for preparing silicon carbide by combining environmentally friendly carbon black with a silicon source, which includes: a system for preparing silicon carbide includes at least one purification unit, at least one grinding unit, and at least one thermal activation unit, and the purification unit, grinding unit, and thermal activation unit are composed of The silicon carbide preparation system; step 1, purifying a carbon black material in the purification unit of the silicon carbide preparation system to obtain a purified carbon black material; step 2, the grinding unit of the silicon carbide preparation system The purified carbon black material is mechanically ground to obtain a purified carbon black powder; step 3, a silicon source material is mechanically ground in the grinding unit of the silicon carbide preparation system to obtain a silicon source powder; and the step 4. The purified carbon black powder and silicon source powder are reacted by carbothermal reduction in the heat activation unit of the silicon carbide preparation system, so as to form a purified silicon carbide material. A method for preparing silicon carbide by combining environmentally friendly carbon black with a silicon source, which includes: a system for preparing silicon carbide includes at least one purification unit, at least one grinding unit, and at least one thermal activation unit, and the purification unit, grinding unit, and thermal activation unit are composed of The silicon carbide preparation system; step 1, mechanically grinding a silicon source material in the grinding unit of the silicon carbide preparation system to obtain a silicon source powder; step 2, grinding a carbon powder in the purification unit of the silicon carbide preparation system Purifying the black material to obtain a purified carbon black material; step 3, performing mechanical grinding on the purified carbon black material in the grinding unit of the silicon carbide preparation system to obtain a purified carbon black powder; and step 4. Reacting the purified carbon black powder and silicon source powder in the heat activation unit of the silicon carbide preparation system by carbothermal reduction to form a purified silicon carbide material. According to the method of preparing silicon carbide by combining environmentally friendly carbon black with silicon source as described in item 1 or 2 of the scope of the patent application, the purified carbon black powder and silicon source powder adopt a carbothermal reduction temperature so that the reaction can be carried out by carbothermal reduction method , and the carbon The thermal reduction temperature is 1400°C to 1700°C. According to the method for preparing silicon carbide by using environment-friendly carbon black combined with silicon source as described in item 1 or 2 of the scope of the patent application, the carbon black material is selected to be recovered from a waste tire material or an electronic waste material. According to the method for preparing silicon carbide by combining environmentally friendly carbon black with silicon source as described in item 1 or 2 of the patent application, the silicon source material is selected from a waste rice material, a waste glass material, a low-pollution soil silicon source material or any combination thereof. According to the method for preparing silicon carbide by using environmentally friendly carbon black combined with silicon source as described in item 1 or 2 of the scope of the patent application, wherein the purified carbon black material and silicon source material are mechanically ground, at least one grinding solution is selected, and The milling solution is selected from a solution containing ethanol. A system for preparing silicon carbide by combining environmentally friendly carbon black with a silicon source, which includes: at least one purification unit, which is used to purify a carbon black material to obtain a purified carbon black material; at least one grinding unit, which is used for The purified carbon black material is mechanically ground to obtain a purified carbon black powder, and a silicon source material is mechanically ground to obtain a silicon source powder; and at least one thermal activation unit is used to contain Place the purified carbon black powder and silicon source powder; wherein the purification unit, grinding unit and thermal activation unit form a silicon carbide preparation system; and wherein the purified carbon black powder and silicon source powder are placed in the thermal activation unit to Carbothermal reduction reacts to form a purified silicon carbide material. According to item 7 of the scope of application for the preparation of silicon carbide system using environmentally friendly carbon black combined with silicon source, wherein the purification unit is selected from an acid purification device, an alkali purification device or an acid purification and alkali purification device. According to the seventh item of the patent application, the silicon carbide system is prepared by combining environmentally friendly carbon black with a silicon source, wherein the grinding unit is selected from a mechanical grinding device. According to item 7 of the patent application, the silicon carbide system is prepared by combining environmentally friendly carbon black with a silicon source, wherein the thermal activation unit is selected from a high-temperature furnace.

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