TWI777345B - Device for measuring optoelectronic units - Google Patents
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本發明係關於一種電子元件的測量裝置,特別是關於一種用於檢查光電元件特性的測量裝置。 The present invention relates to a measuring device for electronic components, in particular to a measuring device for inspecting the characteristics of optoelectronic components.
隨著光電技術的進步,目前已知可以用許多介質產生雷射,例如可以透過氣體、化學或半導體等介質產生雷射。目前市面上以透過半導體產生雷射較為常見,一般稱此類半導體為雷射二極體。實務上,雷射二極體製造完成後,還需進行許多光學檢測,以確保雷射品質的穩定。然而,在檢測雷射二極體發出的雷射光時,許多測量項目需要經常性地移動物鏡的物平面、成像鏡的像平面或相機位置。例如,測量項目是相關光束特性的測量光束腰(beam waist)、發散角(divergence angle)及數值孔徑(numerical aperture,NA)等近場參數時,會將物鏡、成像鏡或相機移動至少4個位置,才能取得這些光束特性的參數。於所屬技術領域具有通常知識者可以明白,經常性地移動光學系統中任何光學元件將導致系統頻繁震動,除了讓測量條件不穩定之外,也容易產生測量上的誤差。 With the advancement of optoelectronic technology, it is currently known that lasers can be generated from many media, for example, lasers can be generated through media such as gas, chemical or semiconductor. At present, it is more common to generate lasers through semiconductors on the market, and such semiconductors are generally referred to as laser diodes. In practice, after the laser diode is manufactured, many optical inspections are required to ensure the stability of the laser quality. However, many measurement items require frequent movement of the object plane of the objective lens, the image plane of the imaging mirror, or the camera position when detecting the laser light emitted by the laser diode. For example, when the measurement item is to measure near-field parameters such as beam waist (beam waist), divergence angle (divergence angle) and numerical aperture (NA) of related beam characteristics, the objective lens, imaging mirror or camera will be moved by at least 4 The parameters of these beam characteristics can be obtained only at a position. Those with ordinary knowledge in the art can understand that frequently moving any optical element in the optical system will cause the system to vibrate frequently, which not only makes the measurement conditions unstable, but also easily produces measurement errors.
據此,業界需要一種新的光電元件特性測量裝置,除了要能夠快速測量相關光束特性的參數之外,要能夠避免在測量的過程移動光學元件,以保持光學系統的穩定。 Accordingly, the industry needs a new device for measuring the characteristics of optoelectronic components, in addition to being able to quickly measure parameters related to beam characteristics, it should also avoid moving the optical components during the measurement process, so as to maintain the stability of the optical system.
本發明提供一種光電元件特性測量裝置,可以用於檢測雷射二極體相關光束特性的多個近場參數,並且在測量的過程中可以保持光學系統的穩定。 The invention provides a photoelectric element characteristic measuring device, which can be used to detect multiple near-field parameters related to beam characteristics of a laser diode, and can maintain the stability of the optical system during the measurement process.
本發明提出一種光電元件特性測量裝置,包含物鏡、焦點調整模組以及攝影模組。所述物鏡設置於第一光路徑上,用以接收第一待測光線,並將第一待測光線轉換成第二待測光線。所述焦點調整模組設置於第一光路徑上,用以接收第二待測光線以反射出第三待測光線,並且受控於測試指令調整第三待測光線聚焦在第二光路徑上的第一位置或第二位置。所述攝影模組設置於第二光路徑上,用以測量第三待測光線的光束特性。 The invention provides a photoelectric element characteristic measuring device, which includes an objective lens, a focus adjustment module and a photographing module. The objective lens is arranged on the first light path, and is used for receiving the first light to be measured and converting the first light to be measured into the second light to be measured. The focus adjustment module is arranged on the first light path, and is used for receiving the second light to be measured to reflect the third light to be measured, and controlled by the test instruction to adjust the third light to be measured to focus on the second light path the first or second position. The photographing module is arranged on the second light path and is used for measuring the beam characteristic of the third light to be measured.
於一些實施例中,光電元件特性測量裝置更可以包含分光鏡,所述分光鏡設置於物鏡與焦點調整模組之間,將第三待測光線投射向攝影模組。此外,焦點調整模組可以包含反射式空間光調制器,反射式空間光調制器包含多個像素,每一個像素對應液晶單元,測試指令可以用以調整液晶單元的偏轉角度。另外,光電元件特性測量裝置更可以包含前偏單元以及檢偏單元,前偏單元設置於物鏡與分光鏡之間,用以偏振第二待測光線。檢偏單元設置於分光鏡與攝影模組之間,用以過濾第三待測光線的雜訊。 In some embodiments, the photoelectric element characteristic measuring device may further include a beam splitter, the beam splitter is disposed between the objective lens and the focus adjustment module, and projects the third light to be measured toward the photographing module. In addition, the focus adjustment module may include a reflective spatial light modulator, the reflective spatial light modulator includes a plurality of pixels, each pixel corresponds to a liquid crystal cell, and the test command can be used to adjust the deflection angle of the liquid crystal cell. In addition, the photoelectric element characteristic measuring device may further include a front polarization unit and an analyzer unit, and the front polarization unit is disposed between the objective lens and the beam splitter for polarizing the second light to be measured. The polarizing unit is arranged between the beam splitter and the photographing module, and is used for filtering the noise of the third light to be measured.
於一些實施例中,焦點調整模組可以包含基板、多個微支撐柱與可撓反射膜,所述多個微支撐柱連接於基板與可撓反射膜之間,測試指令用以調整所述多個微支撐柱的長度,以改變可撓反射膜聚焦第三待測光線的位置。此外,焦點調整模組可以包含微反射鏡陣列,微反射鏡陣列包含多個微反射鏡,每一個微反射鏡受控於測試指令以調整偏轉角度,以改變微反射鏡陣列聚焦第三待測光線的位置。 In some embodiments, the focus adjustment module may include a substrate, a plurality of micro-support columns and a flexible reflective film, the plurality of micro-support columns are connected between the substrate and the flexible reflective film, and a test command is used to adjust the The lengths of the plurality of micro-support columns are used to change the position where the flexible reflective film focuses the third light to be measured. In addition, the focus adjustment module may include a micro-mirror array, the micro-mirror array includes a plurality of micro-mirrors, and each micro-mirror is controlled by a test command to adjust the deflection angle, so as to change the focus of the micro-mirror array on the third to-be-tested position of the light.
綜上所述,本發明提供的光電元件特性測量裝置藉由調整焦點調整模組聚焦待測光線的位置,便能夠檢測雷射二極體相關光束特性的多個近場參數,從而不需要移動光學系統中的物鏡或成像鏡等光學元件,可以保持光學系統的穩定。 To sum up, the photoelectric element characteristic measuring device provided by the present invention can detect a plurality of near-field parameters related to the beam characteristics of the laser diode by adjusting the position where the focus adjustment module focuses the light to be measured, so that no movement is required. Optical components such as objective lenses or imaging mirrors in the optical system can maintain the stability of the optical system.
1:光電元件特性測量裝置 1: Photoelectric element characteristic measurement device
10:物鏡 10: Objective lens
12:焦點調整模組 12: Focus adjustment module
120:可撓反射膜 120: Flexible reflective film
120a:表面 120a: Surface
122:基板 122: Substrate
122a:表面 122a: Surface
124:微支撐柱 124: Micro support column
126:間隔件 126: Spacer
128:電極 128: Electrodes
14:攝影模組 14: Photography module
16:分光鏡 16: Beamsplitter
2:光電元件特性測量裝置 2: Photoelectric element characteristic measurement device
20:物鏡 20: Objective lens
22:焦點調整模組 22: Focus adjustment module
220:基板 220: Substrate
222a~222b:電極 222a~222b: Electrodes
224:透明蓋板 224: Transparent cover
226:液晶單元 226: Liquid crystal cell
24:攝影模組 24: Photography Module
26:分光鏡 26: Beamsplitter
280:前偏單元 280: Front bias unit
282:檢偏單元 282: Analysis unit
3:光電元件特性測量裝置 3: Photoelectric element characteristic measurement device
30:物鏡 30: Objective lens
32:焦點調整模組 32: Focus adjustment module
34:攝影模組 34: Photography Module
36:分光鏡 36: Beamsplitter
38:成像鏡 38: Imaging mirror
4:光電元件特性測量裝置 4: Photoelectric element characteristic measurement device
40:物鏡 40: Objective lens
42:焦點調整模組 42: Focus adjustment module
44:攝影模組 44: Photography Module
46:分光鏡 46: Beamsplitter
48:成像鏡 48: Imaging mirror
480:前偏單元 480: Front bias unit
482:檢偏單元 482: Analyzer unit
DUT:雷射二極體 DUT: Laser Diode
D1~D3:距離 D1~D3: Distance
L1~L2:透鏡 L1~L2: Lens
H0~H1:長度 H0~H1: length
P1:焦平面 P1: focal plane
圖1係繪示依據本發明一實施例之光電元件特性測量裝置的架構示意圖。 FIG. 1 is a schematic diagram showing the structure of an apparatus for measuring characteristics of optoelectronic components according to an embodiment of the present invention.
圖2係繪示依據本發明一實施例之焦點調整模組的架構示意圖。 FIG. 2 is a schematic diagram illustrating a structure of a focus adjustment module according to an embodiment of the present invention.
圖3係繪示依據本發明另一實施例之光電元件特性測量裝置的架構示意圖。 FIG. 3 is a schematic diagram illustrating the structure of an apparatus for measuring characteristics of optoelectronic components according to another embodiment of the present invention.
圖4係繪示依據本發明另一實施例之焦點調整模組的架構示意圖。 FIG. 4 is a schematic diagram illustrating a structure of a focus adjustment module according to another embodiment of the present invention.
圖5係繪示依據本發明再一實施例之光電元件特性測量裝置的架構示意圖。 FIG. 5 is a schematic diagram showing the structure of a photoelectric element characteristic measuring apparatus according to still another embodiment of the present invention.
圖6係繪示依據本發明又一實施例之光電元件特性測量裝置的架構示意圖。 FIG. 6 is a schematic diagram illustrating the structure of an apparatus for measuring characteristics of optoelectronic components according to another embodiment of the present invention.
下文將進一步揭露本發明之特徵、目的及功能。然而,以下所述者,僅為本發明之實施例,當不能以之限制本發明之範圍,即但凡依本發明申請專利範圍所作之均等變化及修飾,仍將不失為本發明之要意所在,亦不脫離本發明之精神和範圍,故應將視為本發明的進一步實施態樣。 The features, objects and functions of the present invention will be further disclosed below. However, the following descriptions are only examples of the present invention, and should not be used to limit the scope of the present invention, that is, any equivalent changes and modifications made according to the scope of the patent application of the present invention will still be the essence of the present invention, Without departing from the spirit and scope of the present invention, it should be regarded as a further embodiment of the present invention.
請參閱圖1,圖1係繪示依據本發明一實施例之光電元件特性測量裝置的架構示意圖。如圖1所示,本實施例的光電元件特性測量裝置1用於測量光電元件所發出光束的相關參數,而所述光電元件可以指的是一種雷射二極體DUT。本實施例不加以限制雷射二極體DUT的種類,例如所述光電元件也可以是氣體雷射元件或化學雷射元件。在此,光電元件特性測量裝置1可以用於測量雷射二極體DUT的光束特性,特別是用來測量雷射二極體DUT發出雷射光線的近場(near field)參數。例如,光電元件特性測量裝置1可以用來測量雷射光線的光束腰(beam waist,W0)和、發散角(divergence angle,θ)及數值孔徑(numerical aperture,NA)等近場參數。一般來說,測量雷射二極體DUT的近場參數時,光學系統可能包含了可移動的物鏡或成像鏡,而所述物鏡或成像鏡會在一定範圍內移動式掃描。不過,本實施例在此提出了一種不需要成像鏡,且不用移動物鏡的光學架構。圖1所繪示的光電元件特性測量裝置1具有物鏡10、焦點調整模組12、攝影模組14以及分光鏡16。在此,光電元件特性測量裝置1包含了第一光路徑和第二光路徑,其中物鏡10、焦點調整模組12以及分光鏡16設置於第一光路徑上,而攝影模組14以及分光鏡16設置於第二光路徑上,分光鏡16恰好在第一光路徑和第二光路徑的交會處。以下將依序說明第一光路徑以及第二光路徑上的各個元件。
Please refer to FIG. 1 . FIG. 1 is a schematic diagram illustrating the structure of an apparatus for measuring characteristics of optoelectronic components according to an embodiment of the present invention. As shown in FIG. 1 , the photoelectric element
物鏡10會對準雷射二極體DUT的發光側,並用以接收雷射二極體DUT發出的雷射光線(第一待測光線)。圖1中雷射二極體DUT到物鏡10之間的點鍊線,係用以示意第一待測光線沿著第一光路徑進入光電元件特性測量裝置1,並不用以限制實際上物鏡10與雷射二極體DUT的尺寸,也不用以限制雷射二極體DUT發出第一待測光線的角度。有別於已經組裝完成的雷射發射器,這裡指的
雷射二極體DUT還沒有組裝上適當的透鏡,因此雷射二極體DUT所發出的雷射光線(第一待測光線)並不是平行光。於所屬技術領域具有通常知識者可知,如果將光源擺放在凸透鏡一側焦平面上,藉由凸透鏡的光學特性,光源發出的光線可以被轉換成平行光而從凸透鏡的另一側射出。於一個例子中,物鏡10可以是凸透鏡,且物鏡10與雷射二極體DUT的距離可以是固定的。例如,雷射二極體DUT可以擺放在物鏡10的入光側焦平面上,從而可以將非平行的雷射光線(第一待測光線)轉換成平行的雷射光線(第二待測光線)。換句話說,雷射二極體DUT與物鏡10不會相對移動,且物鏡10可以將第一待測光線轉換成具有平行光束特性的第二待測光線。
The
如圖1所繪示的例子,從物鏡10方向來的第二待測光線會沿著第一光路徑進入分光鏡16,且入射分光鏡16的第二待測光線可以穿透至焦點調整模組12。如圖1中繪示的,由物鏡10到分光鏡16,再由分光鏡16到焦點調整模組12之間的點鍊線,係用以示意第二待測光線沿著第一光路徑的行徑路線。實務上,為了使光學系統的體積縮小,或者為了讓光學元件更容易被架設與調整,於所屬技術領域具有通常知識者可以理解分光鏡16的用途,本實施例在此不予贅述。在此,焦點調整模組12內部具有可以反射光線的元件(未繪示於圖1)用以反射第二待測光線,本實施例將經焦點調整模組12反射後的光線稱為第三待測光線。於一個例子中,進入焦點調整模組12之前的第二待測光線是平行光,離開焦點調整模組12的第三待測光線則會變成非平行光並且可以聚焦於特定位置。
In the example shown in FIG. 1 , the second light to be measured from the direction of the
承接上述,由於第三待測光線已經是非平行的雷射光線,會隨著光線的前進而慢慢聚焦。以圖1的例子來說,第二待測光線是垂直入射焦點調整模組12,從而離開焦點調整模組12的第三待測光線(反射後的第二待測光線)應該
沿著原光軸回到分光鏡16。接著,分光鏡16接收到焦點調整模組12反射回來的第三待測光線後,會再將反射回來的第三待測光線導引向攝影模組14。換句話說,本實施例是利用焦點調整模組12聚焦光線,不需要另外加入成像鏡,例如本實施例的光電元件特性測量裝置1沒有鏡筒透鏡(tube lens)。另外,因為雷射光線被物鏡10轉換成平行光(第二待測光線),理論上可以被傳送到直線上的任意距離,也等於延長了第一光路徑的長度。
Following the above, since the third light to be measured is already a non-parallel laser light, it will gradually focus as the light progresses. Taking the example of FIG. 1 as an example, the second light to be measured is vertically incident on the
於一個例子中,本實施例不限制物鏡10到分光鏡16之間的距離D1,例如有機會可以加長距離D1,從而在物鏡10到分光鏡16之間擺放更多種光學元件。然而,於所屬技術領域具有通常知識者可知,平行光(第二待測光線)由於沒有聚焦(沒有焦點)的原因,從而沒有辦法有效成像。因此,焦點調整模組12內部需要有光學結構能夠聚焦入射光,使得平行的雷射光線(第二待測光線)經過焦點調整模組12後,可以再被轉換成非平行的雷射光線(第三待測光線),並讓第三待測光線可以被成像,以利測量光束特性。實務上,焦點調整模組12可以將第三待測光線聚焦於多個焦點位置(可變焦點),為了說明焦點調整模組12內部的結構,以及說明焦點調整模組12如何改變第三待測光線聚焦的位置,請一併參閱圖1與圖2。
In one example, this embodiment does not limit the distance D1 between the
圖2係繪示依據本發明一實施例之焦點調整模組的架構示意圖。如圖所示,焦點調整模組12可以包含可撓反射膜120、基板122、多個微支撐柱124、多個間隔件126以及多個電極128。可撓反射膜120一側的表面120a可以朝向分光鏡16並且能夠反射第二待測光線,可撓反射膜120的另一側的多個位置可以分別連接一個微支撐柱124。在此,微支撐柱124的兩端可以分別連接於基板122和可撓反射膜120之間,且微支撐柱124應該略具有彈性,本實施例不限制可撓反
射膜120的材料。為了強化基板122的結構強度,基板122內部也可以設置有多個間隔件126,以避免微支撐柱124施加的應力損壞基板122。此外,基板122的表面122a上可以形成有微結構,微支撐柱124可以設置於微結構上。假設多個微支撐柱124在預設狀態下等長,則被多個微支撐柱124支撐著的可撓反射膜120,於表面120a的形狀會接近表面122a的形狀。當然,如果多個微支撐柱124在預設狀態下不等長,則表面120a的形狀除了關聯於表面122a的形狀之外,還會關聯於不同對應位置的微支撐柱124的預設長度。
FIG. 2 is a schematic diagram illustrating a structure of a focus adjustment module according to an embodiment of the present invention. As shown, the
於一個例子中,微支撐柱124可以受控於對應電極128的施加電壓而形變,例如微支撐柱124可以縮緊或延長以調整長度。實務上,電極128的施加電壓關聯於焦點調整模組12收到的測試指令,例如測試指令可以設定或控制多個電極128要施加的電壓,並由電壓的大小決定微支撐柱124的長度。在此,不同位置的微支撐柱124的長度變化量有可能相同或不同,本實施例不加以限制。此外,由於微支撐柱124的一端連接著可撓反射膜120,當特定位置的微支撐柱124的長度改變,也會連帶地使對應位置的可撓反射膜120被放鬆或拉緊。據此,可撓反射膜120每個位置會有不同的高低,使表面120a形成一個特定的曲面,而這個曲面可以對應一個特定的焦點。換句話說,本實施例便可以藉由改變每個位置的微支撐柱124的長度,決定可撓反射膜120的彎曲程度,以改變第三待測光線的聚焦位置。
In one example, the
以實際的例子來說,假設可撓反射膜120中央的微支撐柱124長度是H0,可撓反射膜120邊緣的微支撐柱124長度是H1。首先假設焦點調整模組12收到第一個測試指令,第一個測試指令可以指示對應電極128控制長度H0是10個距離單位,以及長度H1是12個距離單位,使得H0和H1的差距是2個距離單位。又
假設焦點調整模組12收到下一個測試指令,而此測試指令可以指示長度H0是10個距離單位,以及長度H1是13個距離單位,便能使H0和H1的差距改變為3個距離單位。由上述可知,第一個測試指令可以讓可撓反射膜120中央和邊緣的微支撐柱124相差較小,此時表面120a較為彎曲程度較低(較平緩)。反之,第二個測試指令可以讓可撓反射膜120中央和邊緣的微支撐柱124相差較大,此時表面120a較為彎曲程度較高(較彎曲)。可知在兩個測試指令下,可撓反射膜120的彎曲程度不同,第三待測光線的聚焦位置也會不同。
Taking a practical example, it is assumed that the length of the
在焦點調整模組12一連串地改動表面120a較為彎曲程度時,會對應產生多個不同聚焦位置的第三待測光線,這些第三待測光線沿著原光軸的相反方向回到分光鏡16後,都會被分光鏡16反射到攝影模組14。攝影模組14和分光鏡16設置於第二光路徑上,且攝影模組14和分光鏡16不會相對運動。於一個例子中,攝影模組14係藉由多個不同聚焦位置的第三待測光線,來測量第三待測光線的光束特性。如圖1中繪示的,分光鏡16到攝影模組14之間的點鍊線,係用以示意經過焦點調整模組12反射的第三待測光線,沿著第二光路徑從分光鏡16射出並進入攝影模組14。值得一提的是,本實施例不一定需要分光鏡16,例如只要第三待測光線不是垂直出射焦點調整模組12(非沿著原光軸),那麼從焦點調整模組12反射出的第三待測光線就有可能可以直接進入攝影模組14。換句話說,在沒有分光鏡16的情況下,只要計算第二待測光線的入射角與第三待測光線的出射角,並把攝影模組14擺放在正確位置,應可以很輕易地接收第三待測光線。本實施例係為了讓說明書簡單易懂,後續仍以圖1中繪示的有分光鏡16的光電元件特性測量裝置1進行說明。
When the
於一個例子中,假設分光鏡16到攝影模組14之間的距離D3,而距離D2加上距離D3可以是焦點調整模組12預設的聚焦位置(例如第一位置)。實務上,攝影模組14會有可以取像的焦段(例如第二光路徑上的一定距離範圍),而焦點調整模組12調整表面120a的彎曲程度後,第三待測光線可以聚焦在新的位置(第二位置),第二位置應當還在攝影模組14可以取像的焦段內。換句話說,第三待測光線由於聚焦於攝影模組14可以取像的焦段內,故應能夠成像於攝影模組14的鏡頭中,使得攝影模組14可以測量第三待測光線的光束特性,例如光束腰、發散角及數值孔徑等近場參數。
In one example, the distance D3 between the
當然,本發明的焦點調整模組不限制是可撓反射膜,例如還有可能是反射式空間光調制器。請一併參閱圖3與圖4,圖3係繪示依據本發明另一實施例之光電元件特性測量裝置的架構示意圖,圖4係繪示依據本發明另一實施例之焦點調整模組的架構示意圖。如圖所示,與前一實施例相同的是,圖3所繪示的光電元件特性測量裝置2同樣具有物鏡20、焦點調整模組22、攝影模組24以及分光鏡26。並且,物鏡20、焦點調整模組22以及分光鏡26同樣設置於第一光路徑上,而攝影模組24以及分光鏡26同樣設置於第二光路徑上。與前一實施例不相同的是,焦點調整模組22可以是一種反射式空間光調制器,而因為反射式空間光調制器係操作於偏振光,據此光電元件特性測量裝置2還會包含有前偏單元280和檢偏單元282。實務上,前偏單元280可以是一種光學偏振片(polarizer),設置於物鏡20以及分光鏡26之間,而檢偏單元282可以是一種光學檢偏片(analyzer),設置於分光鏡26以及攝影模組24之間。
Of course, the focus adjustment module of the present invention is not limited to a flexible reflective film, for example, it may also be a reflective spatial light modulator. Please refer to FIG. 3 and FIG. 4 together. FIG. 3 is a schematic diagram illustrating the structure of a photoelectric device characteristic measuring apparatus according to another embodiment of the present invention, and FIG. 4 is a schematic diagram illustrating a focus adjustment module according to another embodiment of the present invention. Schematic diagram of the architecture. As shown in the figure, as in the previous embodiment, the photoelectric element
於一個例子中,物鏡20同樣會接收雷射二極體DUT發出的雷射光線(第一待測光線),並轉換成平行的雷射光線(第二待測光線)。第二待測光線會
穿過前偏單元280而具有偏振光的特性,並接著穿透分光鏡26至焦點調整模組22。焦點調整模組22可以包含基板220、電極222a、電極222b以及透明蓋板224,且電極222a和電極222b之間會填充液晶層,液晶層中會有多組液晶單元226。在此,每一組液晶單元226內可以包含了許多的液晶粒子,且不同的液晶單元226可依據所在位置而被定義在不同的像素中。並且,電極222a和電極222b可以精密控制每個像素對應的電壓,本實施例不贅述電極如何施加電壓控制像素中的液晶粒子。於所屬技術領域具有通常知識者可知,液晶單元226中的液晶粒子會受控於電極222a和電極222b之間的電壓差而改變旋轉的角度。與前一個實施例類似的,第二待測光線會從透明蓋板224進入焦點調整模組22,而多個測試指令可以設定或控制電極222a和電極222b要施加的多個電壓,並由電壓的大小決定液晶單元226折射第二待測光線的角度(或稱液晶單元的偏轉角度),以改變第二待測光線在焦點調整模組22內的行進方向。
In one example, the
基板220或電極222a朝向透明蓋板224的一側應可以反光,當第二待測光線穿過液晶層中的多個液晶單元226後,再由基板220或電極222a反射入射的第二待測光線。此時,被基板220或電極222a反射後的第二待測光線應當已非平行光,本實施例同樣定義其為第三待測光線。與前述實施例相同,多個測試指令可以讓多個第三待測光線有不同的聚焦位置,這些第三待測光線沿著原光軸的相反方向回到分光鏡26後,都會被分光鏡26反射向檢偏單元282。在此,第三待測光線會穿過檢偏單元282以過濾雜訊並接著被攝影模組24接收。於一個例子中,分光鏡26、檢偏單元282和攝影模組24都設置於第二光路徑上,且分光鏡26、檢偏單元282和攝影模組24不會相對運動。藉此,攝影模組24可以依據多個不同聚焦位置的第三待測光線,來測量第三待測光線的光束特性。
The side of the
當然,於其他的例子中,焦點調整模組還可以包含微反射鏡陣列(圖未示)。類似於圖1的例子,本實施例和圖1的差異在於焦點調整模組不必須包含可撓反射膜,而是把可撓反射膜替換成微反射鏡陣列。所述微反射鏡陣列可以由多個獨立控制的微反射鏡組成。在此,每一個微反射鏡都可以受控於測試指令以調整偏轉角度,從而以改變微反射鏡陣列聚焦第三待測光線的位置。於所屬技術領域具有通常知識者可以理解,可撓反射膜會具有連續式的反射面,微反射鏡陣列可以是非連續式的反射面。然而,當每一個微反射鏡極小時,只要多個微反射鏡緊密排列,應當同樣也可以實現前述實施例可撓反射膜的效果。據此,本實施例不再贅述微反射鏡陣列如何改變第三待測光線的聚焦位置。 Of course, in other examples, the focus adjustment module may also include a micro-mirror array (not shown). Similar to the example in FIG. 1 , the difference between the present embodiment and FIG. 1 is that the focus adjustment module does not necessarily include a flexible reflective film, but replaces the flexible reflective film with a micro-mirror array. The micro-mirror array may consist of a plurality of independently controlled micro-mirrors. Here, each micro-mirror can be controlled by the test command to adjust the deflection angle, so as to change the position where the micro-mirror array focuses the third light to be measured. Those skilled in the art can understand that the flexible reflective film has a continuous reflective surface, and the micro-mirror array can be a discontinuous reflective surface. However, when each micro-mirror is extremely small, as long as a plurality of micro-mirrors are closely arranged, the effect of the flexible reflective film of the foregoing embodiment should also be achieved. Accordingly, in this embodiment, how the micro-mirror array changes the focus position of the third light to be measured will not be repeated.
此外,本發明還提出另外一種光電元件特性測量裝置,請一併參閱圖1與圖5,圖5係繪示依據本發明再一實施例之光電元件特性測量裝置的架構示意圖。和圖1繪示的實施例相同的是,圖5所繪示的光電元件特性測量裝置3同樣具有物鏡30、焦點調整模組32、攝影模組34以及分光鏡36。其中,焦點調整模組32可以類似如圖2的架構,本實施例在此不予贅述。與圖1不相同的是,光電元件特性測量裝置3還可以具備成像鏡38、透鏡L1以及透鏡L2。在此,成像鏡38和透鏡L1設置於物鏡30和分光鏡36之間,並位於第一光路徑中。於一個例子中,成像鏡38可以是一種鏡筒透鏡(tube lens),從而由物鏡30和成像鏡38組成一個顯微系統,並具有固定的放大倍率。
In addition, the present invention also provides another photoelectric element characteristic measuring apparatus. Please refer to FIG. 1 and FIG. 5 together. FIG. 5 is a schematic diagram illustrating the structure of the photoelectric element characteristic measuring apparatus according to another embodiment of the present invention. Similar to the embodiment shown in FIG. 1 , the photoelectric element
以實際的例子來說,從物鏡30方向來的第二待測光線會沿著第一光路徑先進入成像鏡38,成像鏡38可以將第二待測光線聚焦在焦平面P1,而焦平面P1可以正好在透鏡L1的焦點。於所屬技術領域具有通常知識者可以理解,第二待測光線從焦平面P1的位置進入透鏡L1後,透鏡L1會將第二待測光線轉成為
平行光。接著,從透鏡L1出射的第二待測光線,會入射分光鏡36並穿透至焦點調整模組32。與前述的實施例相同,焦點調整模組32可以反射第二待測光線,經焦點調整模組32反射後的光線稱為第三待測光線。於一個例子中,進入焦點調整模組32之前的第二待測光線是平行光,離開焦點調整模組32的第三待測光線則會變成非平行光並且可以聚焦於特定位置。
Taking a practical example, the second light to be measured from the direction of the
承接上述,由於第三待測光線已經是非平行的雷射光線,會隨著光線的前進而慢慢聚焦。有別於圖1,本實施例除了利用焦點調整模組32聚焦光線之外,更可以利用透鏡L2再次聚焦第三待測光線,讓分光鏡36到攝影模組34之間的光程可以比圖1中分光鏡16到攝影模組14的光程更短。舉例來說,透鏡L2可以是一種凸透鏡,而透鏡L2的焦平面可以大致上就是攝影模組34的鏡頭位置,從而第三待測光線可以經過透鏡L2聚焦於攝影模組34可以取像的焦段內。如前所述,由於第三待測光線成像於攝影模組34的鏡頭中,使得攝影模組34可以測量第三待測光線的光束特性,例如光束腰、發散角及數值孔徑等近場參數。
Following the above, since the third light to be measured is already a non-parallel laser light, it will gradually focus as the light progresses. Different from FIG. 1 , in this embodiment, in addition to using the
於一個例子中,焦點調整模組32放置在透鏡L1和透鏡L2之間,用意係為了於光學上等同貼齊於物鏡30的孔徑(pupil),使得焦點調整模組32於變焦時無放大倍率變化。也就是說,焦點調整模組32可以視為放置在第一光路徑中的中繼孔徑平面(relay pupil plane)上,中繼孔徑平面於光學上可以視為物鏡30的孔徑所在的平面(pupil plane)。由於圖5繪示的例子中,攝影模組34接收到的第三待測光線消除了放大倍率的變化因素,故可減少演算或調校流程中需對不同聚焦位置進行放大倍率校正的時間,更有效提升系統效能。
In one example, the
另外,本發明基於圖3另提出一種光電元件特性測量裝置,請一併參閱圖3、圖5與圖6,圖6係繪示依據本發明又一實施例之光電元件特性測量裝置
的架構示意圖。和圖3繪示的實施例相同的是,圖6所繪示的光電元件特性測量裝置4同樣具有物鏡40、焦點調整模組42、攝影模組44以及分光鏡46。並且,物鏡40、焦點調整模組42以及分光鏡46同樣設置於第一光路徑上,而攝影模組44以及分光鏡46同樣設置於第二光路徑上。此外,焦點調整模組42同樣可以是一種反射式空間光調制器,從而光電元件特性測量裝置4也會包含有前偏單元480和檢偏單元482。特別是,和圖5所繪示的光電元件特性測量裝置3相類似地,光電元件特性測量裝置4也具備成像鏡48、透鏡L1以及透鏡L2。在此,成像鏡48、透鏡L1以及透鏡L2的原理和前一實施例相同,本實施例在此便不予贅述。於所屬技術領域具有通常知識者可以理解,圖6的攝影模組44接收到的第三待測光線同樣也會消除了放大倍率的變化因素,故也同樣可減少演算或調校流程中需對不同聚焦位置進行放大倍率校正的時間,更有效提升系統效能。
In addition, the present invention proposes another photoelectric element characteristic measuring apparatus based on FIG. 3 . Please refer to FIGS. 3 , 5 and 6 together. FIG. 6 illustrates a photoelectric element characteristic measuring apparatus according to another embodiment of the present invention.
Schematic diagram of the architecture. Similar to the embodiment shown in FIG. 3 , the photoelectric element
綜上所述,本發明提供的光電元件特性測量裝置藉由調整焦點調整模組聚焦待測光線的位置,便能夠檢測雷射二極體相關光束特性的多個近場參數,從而不需要移動光學系統中的物鏡或成像鏡等光學元件,可以保持光學系統的穩定。 To sum up, the photoelectric element characteristic measuring device provided by the present invention can detect a plurality of near-field parameters related to the beam characteristics of the laser diode by adjusting the position where the focus adjustment module focuses the light to be measured, so that no movement is required. Optical components such as objective lenses or imaging mirrors in the optical system can maintain the stability of the optical system.
1: 光電元件特性測量裝置 10: 物鏡 12: 焦點調整模組 14: 攝影模組 16: 分光鏡 DUT 雷射二極體 1: Photoelectric element characteristic measurement device 10: Objective lens 12: Focus adjustment module 14: Photography module 16: Beamsplitter DUT laser diode
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TW200626880A (en) * | 2005-01-21 | 2006-08-01 | Prodisc Technology Inc | Inspection system and inspection method |
TWI643691B (en) * | 2014-08-18 | 2018-12-11 | 日商迪思科股份有限公司 | Light spot shape detection method of laser light |
US20190041323A1 (en) * | 2017-08-07 | 2019-02-07 | The Boeing Company | Apparatus for measuring spectral hemispherical reflectance of samples at grazing angles |
WO2020179049A1 (en) * | 2019-03-07 | 2020-09-10 | カナレ電気株式会社 | Beam profile measuring device for laser light |
CN212133865U (en) * | 2020-06-02 | 2020-12-11 | 南京引创光电科技有限公司 | Optical measurement system |
TW202045896A (en) * | 2019-05-31 | 2020-12-16 | 致茂電子股份有限公司 | Device for measuring optolectronic units |
-
2020
- 2020-12-31 TW TW109146991A patent/TWI777345B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200626880A (en) * | 2005-01-21 | 2006-08-01 | Prodisc Technology Inc | Inspection system and inspection method |
TWI643691B (en) * | 2014-08-18 | 2018-12-11 | 日商迪思科股份有限公司 | Light spot shape detection method of laser light |
US20190041323A1 (en) * | 2017-08-07 | 2019-02-07 | The Boeing Company | Apparatus for measuring spectral hemispherical reflectance of samples at grazing angles |
WO2020179049A1 (en) * | 2019-03-07 | 2020-09-10 | カナレ電気株式会社 | Beam profile measuring device for laser light |
TW202045896A (en) * | 2019-05-31 | 2020-12-16 | 致茂電子股份有限公司 | Device for measuring optolectronic units |
CN212133865U (en) * | 2020-06-02 | 2020-12-11 | 南京引创光电科技有限公司 | Optical measurement system |
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