TWI777298B - Trays and Chemical Vapor Deposition Units for Chemical Vapor Deposition Units - Google Patents

Abstract

The invention relates to a tray for a chemical vapor deposition device and a chemical vapor deposition device, wherein the tray comprises: a tray, which can be rotated along its central axis, and is provided with a plurality of substrate slots, the substrate slots are used for for accommodating the substrate to be processed, each of the substrate grooves includes a telecentric section away from the central axis, a proximal section close to the central axis, and a first compensation section located between the telecentric section and the proximal section , the substrate groove has a groove center, the distance from the first compensation segment to the groove center is a first distance, the distance from the proximal segment to the groove center is a second distance, and the first distance is greater than the second distance . The use of the chemical vapor deposition apparatus is beneficial to improve the consistency of growing epitaxial layers on the edge of the substrate to be processed.

Description

Trays and Chemical Vapor Deposition Units for Chemical Vapor Deposition Units

The present invention relates to the field of semiconductors, and in particular, to a tray and a chemical vapor deposition device for a chemical vapor deposition device.

A semiconductor light-emitting diode (Light Emitting Diode, LED) is a semiconductor diode that can convert electrical energy into light energy. Light-emitting diodes have the advantages of high efficiency, energy saving and green environmental protection, and have a wide range of applications in traffic indication, outdoor full-color display and other fields. A revolution in the history of human lighting.

Usually, the substrate to be processed is placed on a tray in the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device, and the heat energy provided by the heating wire in the MOCVD device is conducted to the to-be-processed through the tray. substrate, while feeding raw materials into the reaction chamber to epitaxially grow semiconductor materials on the surface of the substrate to be processed. The base is provided with a plurality of substrate slots, and each substrate slot is used for accommodating a substrate to be processed.

When the semiconductor material is epitaxially grown on the surface of the substrate to be processed, the tray rotates at a high speed, and the substrate to be processed is easily in close contact with the side wall of the substrate groove at a position away from the center of the tray under the action of centrifugal force. Since the heat energy provided by the heating wire is conducted to the substrate to be processed through the susceptor, the temperature of the contact area between the substrate to be processed and the sidewall will be significantly higher than the temperature of the non-contact area, resulting in the emission wavelength of each area of the substrate to be processed. Inconsistency affects the uniformity of the substrate to be processed.

The technical problem solved by the present invention is to provide a tray for a chemical vapor deposition device and a chemical vapor deposition device, so as to improve the consistency of growing an epitaxial layer on the surface of the substrate to be processed.

In order to solve the above technical problems, the present invention provides a tray for a chemical vapor deposition device, comprising: the tray, which can be rotated along its central axis, and is provided with a plurality of substrate grooves, and the substrate grooves are used for accommodating substrates to be processed. each of the substrate grooves includes a telecentric segment away from the central axis, a proximal segment close to the central axis, and a first compensation segment located between the distal and proximal segments, the substrate The proximal section of the slot has a slot center, the distance from the first compensation section to the slot center is a first distance, the distance from the proximal section to the slot center is a second distance, and the first distance is greater than the second distance.

Optionally, the groove centers of the plurality of substrate grooves form a circle, and the center of the circle coincides with the center of the tray.

Optionally, the groove centers of a plurality of the substrate grooves enclose a plurality of concentric circles, and the centers of the plurality of concentric circles coincide with the center of the tray.

Optionally, the number of the first compensation segment between the distal segment and the proximal segment is one or more.

Optionally, the telecentric segment further includes a second compensation segment, the distance from the second compensation segment to the center of the slot is a third distance, and the third distance is greater than the second distance.

Optionally, the difference between the first distance and the second distance is: 0.1 mm to 2 mm.

Optionally, the depth of the first compensation section is: 0.5 mm to 2 mm.

Optionally, the size of the substrate to be processed includes: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.

Optionally, the material of the tray includes: graphite or silicon carbide.

Optionally, the substrate to be processed has a notch, the notch faces the telecentric segment, and the substrate to be processed around the notch is in contact with the telecentric segment.

Correspondingly, the present invention also provides a chemical vapor deposition device, comprising: a reaction chamber; the above-mentioned tray is located in the reaction chamber.

Optionally, the chemical vapor deposition device includes: a metal organic compound chemical vapor deposition device.

Optionally, it also includes: a heating device for heating the tray; a gas shower head, located in the reaction chamber and opposite to the tray; a gas conveying device, used for conveying into the gas shower head reactive gas.

Compared with the prior art, the technical means of the embodiments of the present invention have the following beneficial effects:

In the chemical vapor deposition apparatus provided by the technical means of the present invention, although the tray rotates along its central axis, the substrates to be processed located in the substrate grooves tend to drift away from the center of the tray under the action of centrifugal force , however, since the distance from the first compensation section of the substrate groove to the center of the groove is greater than the distance from the proximal section of the substrate groove to the center of the groove, the distance from the side wall of the substrate to be processed to the first compensation section is the same as the distance to the center of the groove. The distance difference between the near-center segments is small, then the temperature difference transmitted from the sidewall of the tray to the edge of the substrate to be processed is small, which is beneficial to improve the growth rate of the epitaxial layer on the edge of the surface of the substrate to be processed. consistency.

As mentioned in the prior art, the epitaxial layer grown on the edge of the substrate to be processed by the conventional chemical vapor deposition device has poor consistency. In order to solve the above technical problem, the technical means of the present invention provide a tray for a chemical vapor deposition device and A chemical vapor deposition device, wherein the tray device includes: a tray, which can be rotated along its central axis, and is provided with a plurality of substrate grooves, the substrate grooves are used for accommodating the substrates to be processed, and each of the substrates The slot includes a telecentric segment remote from the central axis, a proximal segment near the central axis, and a first compensation segment located between the distal and proximal segments, the proximal segment of the substrate slot having a slot center , the distance from the first compensation segment to the center of the slot is a first distance, the distance from the near-center segment to the center of the slot is a second distance, and the first distance is greater than the second distance. The use of the chemical vapor deposition apparatus is beneficial to improve the consistency of growing epitaxial layers on the edge of the substrate to be processed.

In order to make the above objects, features and beneficial effects of the present invention more clearly understood, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Figure 1 is a schematic view of the structure of a tray of the present invention; Figure 2 is a top view of the tray in Figure 1 .

Please refer to FIG. 1 and FIG. 2 , the tray 100 , which can be rotated along its central axis, is provided with a plurality of substrate slots 101 .

In this embodiment, it further includes: a rotating shaft 102, the central axis of the rotating shaft 102 is collinear with the central axis of the tray 100, and the rotating shaft 102 rotates along the X direction to drive the tray 100 to rotate.

The substrate slot 101 is used for accommodating the substrate to be processed. When the tray 100 rotates in the X direction, the substrate to be processed tends to move away from the center O of the tray under the action of centrifugal force.

The material of the tray 100 includes: graphite or silicon carbide. When the material of the tray 100 is changed, even if the size of the substrate slot 101 and the size of the substrate to be processed are the same, the heating conditions of each area of the substrate slot 101 to the tray 100 are different. That is, when selecting trays 100 of different materials, it is necessary to adjust the size of the substrate groove 101 adaptively to improve the consistency of growing the epitaxial layer on the edge of the substrate to be processed.

In this embodiment, the groove centers of a plurality of the substrate grooves 101 form a circle, and the center of the circle coincides with the center O of the tray 100 .

Figure 3 is a top view of another tray of the present invention.

In this embodiment, the groove centers of a plurality of the substrate grooves 101 enclose a plurality of concentric circles, and the centers of the plurality of concentric circles coincide with the center O of the tray 100 .

The substrate slot 101 will be described in detail below:

FIG. 4 is a schematic view of the structure of a substrate slot in FIG. 1 .

Referring to FIG. 4, each of the substrate slots 101 includes a distal segment 101a away from the central axis, a proximal segment 101b close to the central axis, and a proximal segment 101b located between the distal segment 101a and the proximal segment 101b The first compensation section 101c, the substrate groove 101 has a groove center O1, the distance from the _first compensation section 101c to the groove center O1 is a first distance R1, and the proximal section 101b to the groove center O1 _The distance is a second distance R2, and the first distance R1 is greater than the second distance R2.

In this embodiment, the first distance R1 is greater than the second distance R2, that is, the first compensation section 101c protrudes out of the circle where the proximal section 101b is located.

FIG. 5 is a schematic view of the structure of placing the substrate to be processed in the substrate groove of FIG. 4 .

Please refer to FIG. 5 , the substrate to be processed 200 has a gap 201 , when the substrate to be processed 200 is placed in the substrate groove 101 , the gap 201 faces the telecentric segment 101 a , and the gap 201 around the gap 201 is The substrate 200 to be processed is in contact with the telecentric segment 101a.

In this embodiment, the size of the substrate to be processed 200 includes: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches. When the size of the substrate to be processed 200 changes, even if the size of the substrate slot 101 and the material of the tray 100 are the same, the heating conditions of each area of the substrate slot 101 to the tray 100 are also different. That is, when different sizes of substrates 200 to be processed are selected, the size of the substrate groove 101 needs to be adaptively adjusted to improve the consistency of growing epitaxial layers on the surface of the substrates 200 to be processed.

Although the tray 100 rotates in the X direction, the substrate to be processed 200 located in the substrate slot 101 moves in the diameter direction away from the center O of the tray under the action of centrifugal force, so that the side wall of the substrate slot 101 in the proximal segment 101b reaches the The distance for processing the substrates is relatively long, however, since the substrate to be processed 200 has a notch 201, the substrate to be processed 200 around the notch 201 will not easily slide after contacting the telecentric segment 101a, and because of the first The distance R1 from the compensation section 101c to the groove center O1 is greater than the distance R2 from the proximal section 101b to the groove center O1, so that the distance from the side wall of the substrate 200 to be processed to the first compensation section 101c is the same as the distance to the proximal section 101b Reducing the difference is beneficial to reduce the difference in heating effect of the edge of the substrate to be processed 200 in each area of the sidewall of the substrate groove 101 , and is beneficial to improve the consistency of growing epitaxial layers on the edge of the substrate to be processed 200 .

In this embodiment, the difference between the first distance R1 and the second distance R2 is: 0.1 mm˜2 mm. The difference between the first distance R1 and the second distance R2 is neither too large nor too small, so that after the substrate 200 to be processed deviates from the center O of the tray under the action of centrifugal force, after the gap 201 is in contact with the telecentric segment 101a, the The distance difference between the side wall of the first compensation section 101c, the side wall of the proximal section 101b, the side wall of the distal section 101a and the side wall of the substrate 200 to be processed is small, then, the side wall of the first compensation section 101c, the side wall of the proximal section 101c, the side wall of the The sidewall of the segment 101b and the sidewall of the telecentric segment 101a have less difference in the heating effect of the sidewall of the substrate 200 to be processed, which is beneficial to improve the consistency of growing the epitaxial layer on the edge of the substrate 200 to be processed.

In this embodiment, the depth of the first compensation section 101c is 0.5 mm to 2 mm. The depth of the first compensation section 101c may be equal to the depth of the proximal end 101b; alternatively, the depth of the first compensation section 101c may be greater than the depth of the proximal end 101b; or, the depth of the first compensation section 101c can be smaller than the depth of the proximal end 101b; when the depth of the first compensation section 101c can be equal to the depth of the proximal end 101b, the difference between the first distance R1 and the second distance R2 can be adjusted so that the The distance from the substrate to be processed to the first compensation section 101c of the substrate slot 101 is equal to the distance from the substrate to be processed to the proximal section 101b of the substrate slot 101, so as to improve the temperature consistency of the edge area of the substrate to be processed; In addition, by adjusting the depth of the first compensation section 101c and the difference between the first distance R1 and the second distance R2, the to-be-processed substrate can be located between the first compensation section 101c and the proximal section 101b. Heating uniformity is better.

_In this embodiment, the distance from the telecentric segment 101a to the groove center O1 is equal to the distance R2 from the proximal segment _101b to the groove center O1.

In this embodiment, the number of the first compensation sections 101c between the telecentric section 101a and the proximal section 101b is two, and the two first compensation sections 101c are mirror-symmetrically distributed in the center of the O-slot in the center of the tray Both sides of the line where O ₁ is located.

FIG. 6 is a schematic view of the structure of another substrate groove in FIG. 1 .

Please refer to FIG. 6 , a plurality of first compensation segments 101c are disposed between the distal segment 101a and the proximal segment 101b.

In this embodiment, the number of the first compensating sections 101c is taken as an example for description. The four first compensating sections 101c are mirror images distributed on both sides of the straight line where the center O _- slot center O1 of the tray is located. The significance of arranging two first compensation sections 101c between the telecentric section 101a and the proximal section 101b is that the area between the telecentric section 101a and the proximal section 101b is most likely to be in contact with the substrate to be processed or the distance is too close, A plurality of first compensating segments 101c are arranged between the telecentric segment 101a and the proximal segment 101b, which is conducive to more precise control of the distance from the side wall of the substrate groove 101 between the distal segment 101a and the proximal segment 101b to the substrate to be processed , thereby reducing the distance difference between each area of the side wall of the substrate slot 101 and the side wall of the substrate to be processed, which is beneficial to improve the consistency of the heating effect of the tray 100 at the edge of the substrate to be processed in each area around the substrate slot 101, thereby improving the processing efficiency of the substrate to be processed. Consistency of edge-grown epitaxial layers.

In other embodiments, the number of the first compensation segment between the distal segment and the proximal segment is greater than two.

FIG. 7 is a schematic view of the structure of another substrate groove in FIG. 1 .

In this embodiment, the telecentric segment 101a further includes a second compensation segment 101d, and the distance from the second compensation segment 101d to the slot center O1 is _a third distance R3, and the third distance R3 is greater than the second distance R2 .

In this embodiment, the second compensation section 101d is provided in the telecentric section 101a, and the distance R3 from the second compensation section 101d to the groove center O1 is greater _than the second distance R2, meaning that when the base to be processed is The gap of the chip is too close to the telecentric section 101a, so that the distance R3 from the second compensation section 101d to the center O1 _of the groove is greater than the second distance R2, which is beneficial to make the distance from the side wall of the telecentric section 101a to the substrate to be processed is the same as that of the proximal section 101b. The distance difference to the substrate to be processed is small, which is beneficial to reduce the heating difference between the sidewall of the telecentric segment 101a and the sidewall of the proximal segment 101b to the substrate to be processed, and is beneficial to improve the consistency of the growth of the epitaxial layer on the edge of the substrate to be processed.

FIG. 8 is a schematic structural diagram of a chemical vapor deposition apparatus of the present invention.

Please refer to FIG. 8 , the reaction chamber 300 ; the above-mentioned tray located in the reaction chamber 300 .

The tray includes: a tray 100, which rotates along its central axis, and is provided with a plurality of substrate slots 101, each of which includes a telecentric section away from the central axis and a proximal section close to the central axis. and a first compensation section located between the telecentric section and the proximal section, the proximal section of the substrate slot 101 has a slot center, the distance from the first compensation section to the slot center is the first distance, and the The distance from the proximal segment to the center of the groove is a second distance, and the first distance is greater than the second distance. The substrate slot 101 is used to accommodate the substrates to be processed. When the tray 100 rotates along the X direction, the substrates to be processed tend to move away from the central axis under the action of centrifugal force. There is a gap, and the gap faces the telecentric section of the substrate slot 101, so that the gap is easy to contact with the telecentric section and is not easy to slide, and because the distance from the first compensation section to the center of the slot is greater than the proximal section. The distance to the center of the groove reduces the difference between the distance between the side wall of the substrate to be processed and the first compensation segment and the distance to the near-center segment, which is beneficial to reduce the heating effect of the substrate to be processed in each area of the side wall of the substrate groove 101. The difference is beneficial to improve the consistency of the epitaxial layer growth on the edge of the substrate to be processed.

In this embodiment, the chemical vapor deposition apparatus is a metal organic compound chemical vapor deposition apparatus.

In other embodiments, other types of chemical vapor deposition apparatuses may also be used.

In this embodiment, it further includes: a heating device for heating the tray 100 ; a gas shower head 301 , located in the reaction chamber 300 and disposed opposite to the tray; a gas conveying device 302 for feeding The reaction gas is transported in the gas shower head 301 .

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the scope of the patent application.

1: Apparatus 100: Tray 101: Substrate slot 101a: Telecentric section 101b: Proximal section 101c: First compensation section 101d: Second compensation section 102: Rotation shaft 200: Substrate to be processed 201: Notch 300: Reaction chamber 301 : Gas shower head 302 : Gas delivery device O: Center O ₁ : Tank center R1: First distance R2: Second distance R3: Third distance X: Direction

Figure 1 is a schematic structural diagram of a tray of the present invention; Figure 2 is a top view of the tray in Figure 1; Figure 3 is a top view of another tray of the present invention; Figure 4 is a schematic structural diagram of a substrate slot in Figure 1; Fig. 5 is a schematic view of the structure of placing the substrate to be processed in the substrate groove of Fig. 4; Figure 6 is a schematic structural diagram of another substrate slot in Figure 1; Figure 7 is a schematic structural diagram of another substrate slot in Figure 1; FIG. 8 is a schematic structural diagram of a chemical vapor deposition apparatus of the present invention.

100: Tray

101: Substrate slot

102: Rotary shaft

300: reaction chamber

301: Gas sprinkler

302: Gas delivery device

O: Center

X: direction

Claims (12)

A tray for a chemical vapor deposition device, comprising: a tray, rotatable along its central axis, and provided with a plurality of substrate grooves, the substrate grooves are used for accommodating substrates to be processed, each of the substrates The slot includes a telecentric segment away from the central axis, a proximal segment near the central axis, and one or more first compensation segments located between the distal and proximal segments, the substrate slot having a slot center, The mirror images of the first compensation segment are distributed on both sides of the straight line where the center of the slot is located. The distance is greater than the second distance. The tray of claim 1, wherein the centers of the plurality of substrate grooves enclose a circle, and the center of the circle coincides with the center of the tray. The tray of claim 1, wherein the groove centers of the plurality of substrate grooves enclose a plurality of concentric circles, and the centers of the plurality of concentric circles coincide with the center of the tray. The tray of claim 1, wherein the telecentric segment further comprises a second compensation segment, and the distance from the second compensation segment to the center of the slot is a third distance, and the third distance is greater than the second distance. The pallet according to claim 1, wherein the difference between the first distance and the second distance is 0.1 mm to 2 mm. The pallet according to claim 1, wherein the depth of the first compensation section is 0.5 mm to 2 mm. The tray of claim 1, wherein the diameters of the substrates to be processed include: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, and 12 inches. The pallet according to claim 1, wherein the material of the pallet comprises: graphite or carbon Silicon. The tray of claim 1, wherein the substrate to be processed has a notch, the notch faces the telecentric segment, and the substrate to be processed around the notch is in contact with the telecentric segment. A chemical vapor deposition apparatus, comprising: a reaction chamber; and the tray according to any one of claim 1 to claim 9, which is located in the reaction chamber. The chemical vapor deposition apparatus of claim 10, wherein the chemical vapor deposition apparatus comprises: a metal organic compound chemical vapor deposition apparatus. The chemical vapor deposition apparatus according to claim 10, further comprising: a heating device for heating the tray; a gas shower head, located in the reaction chamber, opposite to the tray; a gas conveying The device is used to deliver a reaction gas into the gas shower head.

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