TWI777298B - Trays and Chemical Vapor Deposition Units for Chemical Vapor Deposition Units - Google Patents
Trays and Chemical Vapor Deposition Units for Chemical Vapor Deposition Units Download PDFInfo
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- TWI777298B TWI777298B TW109140109A TW109140109A TWI777298B TW I777298 B TWI777298 B TW I777298B TW 109140109 A TW109140109 A TW 109140109A TW 109140109 A TW109140109 A TW 109140109A TW I777298 B TWI777298 B TW I777298B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract
本發明係一種用於化學氣相沉積裝置的托盤和化學氣相沉積裝置,其中,所述托盤包括:托盤,可沿其中心軸轉動,設有若干個基片槽,所述基片槽用於容納待處理基片,每個所述基片槽包括遠離所述中心軸的遠心段、靠近所述中心軸的近心段和位於所述遠心段和近心段之間的第一補償段,所述基片槽具有槽中心,所述第一補償段到槽中心的距離爲第一距離,所述近心段到槽中心的距離爲第二距離,所述第一距離大於第二距離。利用所述化學氣相沉積裝置有利於提高在待處理基片邊緣生長外延層的一致性。The invention relates to a tray for a chemical vapor deposition device and a chemical vapor deposition device, wherein the tray comprises: a tray, which can be rotated along its central axis, and is provided with a plurality of substrate slots, the substrate slots are used for for accommodating the substrate to be processed, each of the substrate grooves includes a telecentric section away from the central axis, a proximal section close to the central axis, and a first compensation section located between the telecentric section and the proximal section , the substrate groove has a groove center, the distance from the first compensation segment to the groove center is a first distance, the distance from the proximal segment to the groove center is a second distance, and the first distance is greater than the second distance . The use of the chemical vapor deposition apparatus is beneficial to improve the consistency of growing epitaxial layers on the edge of the substrate to be processed.
Description
本發明涉及半導體領域,尤其涉及一種用於化學氣相沉積裝置的托盤和化學氣相沉積裝置。The present invention relates to the field of semiconductors, and in particular, to a tray and a chemical vapor deposition device for a chemical vapor deposition device.
半導體發光二極體(Light Emitting Diode,LED)是一種可以把電能轉化成光能的半導體二極體。發光二極體具有高效節能、綠色環保的優點,在交通指示、戶外全色顯示等領域有著廣泛的應用,尤其是利用大功率LED實現半導體固態照明,已成爲新一代光源進入千家萬戶,引領人類照明史的革命。A semiconductor light-emitting diode (Light Emitting Diode, LED) is a semiconductor diode that can convert electrical energy into light energy. Light-emitting diodes have the advantages of high efficiency, energy saving and green environmental protection, and have a wide range of applications in traffic indication, outdoor full-color display and other fields. A revolution in the history of human lighting.
通常,將待處理基片放置在金屬有機化合物化學氣相沉積(Metal Organic Chemical Vapor Deposition,MOCVD)裝置的反應腔內的托盤上,MOCVD裝置中的加熱絲提供的熱能藉由托盤傳導到待處理基片,同時向反應腔內通入原材料,在待處理基片表面外延生長半導體材料。基座上設有多個基片槽,每個基片槽用於容納一個待處理基片。Usually, the substrate to be processed is placed on a tray in the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device, and the heat energy provided by the heating wire in the MOCVD device is conducted to the to-be-processed through the tray. substrate, while feeding raw materials into the reaction chamber to epitaxially grow semiconductor materials on the surface of the substrate to be processed. The base is provided with a plurality of substrate slots, and each substrate slot is used for accommodating a substrate to be processed.
在待處理基片表面外延生長半導體材料時,托盤高速旋轉,待處理基片在離心力的作用下,遠離托盤中心的位置易與基片槽的側壁密切接觸。由於加熱絲提供的熱能藉由基座傳導至待處理基片,因此,待處理基片與側壁的接觸區域的溫度會明顯高於非接觸區域的溫度,導致待處理基片各個區域的發光波長不一致,影響待處理基片的均勻性。When the semiconductor material is epitaxially grown on the surface of the substrate to be processed, the tray rotates at a high speed, and the substrate to be processed is easily in close contact with the side wall of the substrate groove at a position away from the center of the tray under the action of centrifugal force. Since the heat energy provided by the heating wire is conducted to the substrate to be processed through the susceptor, the temperature of the contact area between the substrate to be processed and the sidewall will be significantly higher than the temperature of the non-contact area, resulting in the emission wavelength of each area of the substrate to be processed. Inconsistency affects the uniformity of the substrate to be processed.
本發明解决的技術問題是提供一種用於化學氣相沉積裝置的托盤和化學氣相沉積裝置,以提高在待處理基片表面生長外延層的一致性。The technical problem solved by the present invention is to provide a tray for a chemical vapor deposition device and a chemical vapor deposition device, so as to improve the consistency of growing an epitaxial layer on the surface of the substrate to be processed.
爲解决上述技術問題,本發明提供一種用於化學氣相沉積裝置的托盤,包括:托盤,可沿其中心軸轉動,設有若干個基片槽,所述基片槽用於容納待處理基片,每個所述基片槽包括遠離所述中心軸的遠心段、靠近所述中心軸的近心段和位於所述遠心段和近心段之間的第一補償段,所述基片槽的近心段具有槽中心,所述第一補償段到槽中心的距離爲第一距離,所述近心段到槽中心的距離爲第二距離,所述第一距離大於第二距離。In order to solve the above technical problems, the present invention provides a tray for a chemical vapor deposition device, comprising: the tray, which can be rotated along its central axis, and is provided with a plurality of substrate grooves, and the substrate grooves are used for accommodating substrates to be processed. each of the substrate grooves includes a telecentric segment away from the central axis, a proximal segment close to the central axis, and a first compensation segment located between the distal and proximal segments, the substrate The proximal section of the slot has a slot center, the distance from the first compensation section to the slot center is a first distance, the distance from the proximal section to the slot center is a second distance, and the first distance is greater than the second distance.
可選的,若干個所述基片槽的槽中心圍成一個圓,所述圓的中心與托盤的中心重合。Optionally, the groove centers of the plurality of substrate grooves form a circle, and the center of the circle coincides with the center of the tray.
可選的,若干個所述基片槽的槽中心圍成多個同心圓,所述多個同心圓的中心與托盤的中心重合。Optionally, the groove centers of a plurality of the substrate grooves enclose a plurality of concentric circles, and the centers of the plurality of concentric circles coincide with the center of the tray.
可選的,所述遠心段和近心段之間所述第一補償段的個數爲1個或者多個。Optionally, the number of the first compensation segment between the distal segment and the proximal segment is one or more.
可選的,所述遠心段還包括第二補償段,所述第二補償段到槽中心的距離爲第三距離,所述第三距離大於第二距離。Optionally, the telecentric segment further includes a second compensation segment, the distance from the second compensation segment to the center of the slot is a third distance, and the third distance is greater than the second distance.
可選的,所述第一距離與第二距離的差爲:0.1毫米~2毫米。Optionally, the difference between the first distance and the second distance is: 0.1 mm to 2 mm.
可選的,所述第一補償段的深度爲:0.5毫米~2毫米。Optionally, the depth of the first compensation section is: 0.5 mm to 2 mm.
可選的,所述待處理基片的尺寸包括:2寸、3寸、4寸、5寸、6寸、8寸和12寸。Optionally, the size of the substrate to be processed includes: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.
可選的,所述托盤的材料包括:石墨或者碳化矽。Optionally, the material of the tray includes: graphite or silicon carbide.
可選的,所述待處理基片具有缺口,所述缺口朝向遠心段,且所述缺口周圍的待處理基片與所述遠心段接觸。Optionally, the substrate to be processed has a notch, the notch faces the telecentric segment, and the substrate to be processed around the notch is in contact with the telecentric segment.
相應的,本發明還提供一種化學氣相沉積裝置,包括:反應腔;上述托盤,位於所述反應腔內。Correspondingly, the present invention also provides a chemical vapor deposition device, comprising: a reaction chamber; the above-mentioned tray is located in the reaction chamber.
可選的,所述化學氣相沉積裝置包括:金屬有機化合物化學氣相沉積裝置。Optionally, the chemical vapor deposition device includes: a metal organic compound chemical vapor deposition device.
可選的,還包括:加熱裝置,用於對所述托盤加熱;氣體噴淋頭,位於所述反應腔內,與所述托盤相對設置;氣體輸送裝置,用於向氣體噴淋頭內輸送反應氣體。Optionally, it also includes: a heating device for heating the tray; a gas shower head, located in the reaction chamber and opposite to the tray; a gas conveying device, used for conveying into the gas shower head reactive gas.
與習知技術相比,本發明實施例的技術手段具有以下有益效果:Compared with the prior art, the technical means of the embodiments of the present invention have the following beneficial effects:
本發明技術手段提供的化學氣相沉積裝置中,儘管所述托盤沿其中心軸轉動時,位於所述基片槽內的待處理基片在離心力的作用下易向遠離托盤中心的方向偏移,但是,由於所述基片槽的第一補償段到槽中心的距離大於所述基片槽的近心段到槽中心的距離,使得待處理基片側壁到第一補償段的距離與到近心段的距離差異較小,那麽,托盤側壁傳遞至待處理基片邊緣的溫度差異較小,有利於提高在待處理基片表面邊緣生長外延層的 一致性。In the chemical vapor deposition apparatus provided by the technical means of the present invention, although the tray rotates along its central axis, the substrates to be processed located in the substrate grooves tend to drift away from the center of the tray under the action of centrifugal force , however, since the distance from the first compensation section of the substrate groove to the center of the groove is greater than the distance from the proximal section of the substrate groove to the center of the groove, the distance from the side wall of the substrate to be processed to the first compensation section is the same as the distance to the center of the groove. The distance difference between the near-center segments is small, then the temperature difference transmitted from the sidewall of the tray to the edge of the substrate to be processed is small, which is beneficial to improve the growth rate of the epitaxial layer on the edge of the surface of the substrate to be processed. consistency.
正如先前技術所述,利用習知化學氣相沉積裝置在待處理基片邊緣生長的外延層一致性較差,爲解决上述技術問題,本發明技術手段提供一種用於化學氣相沉積裝置的托盤和化學氣相沉積裝置,其中,所述托盤裝置包括:托盤,可沿其中心軸轉動,設有若干個基片槽,所述基片槽用於容納待處理基片,每個所述基片槽包括遠離所述中心軸的遠心段、靠近所述中心軸的近心段和位於所述遠心段和近心段之間的第一補償段,所述基片槽的近心段具有槽中心,所述第一補償段到槽中心的距離爲第一距離,所述近心段到槽中心的距離爲第二距離,所述第一距離大於第二距離。利用所述化學氣相沉積裝置有利於提高在待處理基片邊緣生長外延層的一致性。As mentioned in the prior art, the epitaxial layer grown on the edge of the substrate to be processed by the conventional chemical vapor deposition device has poor consistency. In order to solve the above technical problem, the technical means of the present invention provide a tray for a chemical vapor deposition device and A chemical vapor deposition device, wherein the tray device includes: a tray, which can be rotated along its central axis, and is provided with a plurality of substrate grooves, the substrate grooves are used for accommodating the substrates to be processed, and each of the substrates The slot includes a telecentric segment remote from the central axis, a proximal segment near the central axis, and a first compensation segment located between the distal and proximal segments, the proximal segment of the substrate slot having a slot center , the distance from the first compensation segment to the center of the slot is a first distance, the distance from the near-center segment to the center of the slot is a second distance, and the first distance is greater than the second distance. The use of the chemical vapor deposition apparatus is beneficial to improve the consistency of growing epitaxial layers on the edge of the substrate to be processed.
爲使本發明的上述目的、特徵和有益效果能夠更爲明顯易懂,下面結合附圖對本發明的具體實施例做詳細的說明。In order to make the above objects, features and beneficial effects of the present invention more clearly understood, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第1圖是本發明一種托盤的結構示意圖;第2圖是第1圖托盤的俯視圖。Figure 1 is a schematic view of the structure of a tray of the present invention; Figure 2 is a top view of the tray in Figure 1 .
請參考第1圖和第2圖,托盤100,可沿其中心軸轉動,設有若干個基片槽101。Please refer to FIG. 1 and FIG. 2 , the
在本實施例中,還包括:轉動軸102,所述轉動軸102的中心軸與托盤100的中心軸共線,所述轉動軸102沿X方向轉動帶動托盤100轉動。In this embodiment, it further includes: a
所述基片槽101內用於容納待處理基片,當托盤100沿X方向轉動時,在離心力的作用下,待處理基片易向遠離托盤中心O的方向移動。The
所述托盤100的材料包括:石墨或者碳化矽。當所述托盤100的材料發生改變時,即便是所述基片槽101的尺寸以及待處理基片的大小相同,所述基片槽101各個區域對托盤100的加熱情况也不同。即:選擇不同材料的托盤100時,需適應性調整所述基片槽101的尺寸以提高在待處理基片邊緣生長外延層的一致性。The material of the
在本實施例中,若干個所述基片槽101的槽中心圍成一個圓,所述圓的中心與托盤100的中心O重合。In this embodiment, the groove centers of a plurality of the
第3圖是本發明另一種托盤的俯視圖。Figure 3 is a top view of another tray of the present invention.
在本實施例中,若干個所述基片槽101的槽中心圍成多個同心圓,所述多個同心圓的中心與托盤100的中心O重合。In this embodiment, the groove centers of a plurality of the
以下對所述基片槽101進行詳細說明:The
第4圖是第1圖中一種基片槽的結構示意圖。FIG. 4 is a schematic view of the structure of a substrate slot in FIG. 1 .
請參考第4圖,每個所述基片槽101包括遠離所述中心軸的遠心段101a、靠近所述中心軸的近心段101b和位於所述遠心段101a和近心段101b之間的第一補償段101c,所述基片槽101具有槽中心O1
,所述第一補償段101c到槽中心O1的距離爲第一距離R1,所述近心段101b到槽中心O1
的距離爲第二距離R2,所述第一距離R1大於第二距離R2。Referring to FIG. 4, each of the
在本實施例中,所述第一距離R1大於第二距離R2,即:所述第一補償段101c凸出於所述近心段101b所在的圓。In this embodiment, the first distance R1 is greater than the second distance R2, that is, the
第5圖是將待處理基片置於第4圖基片槽內的結構示意圖。FIG. 5 is a schematic view of the structure of placing the substrate to be processed in the substrate groove of FIG. 4 .
請參考第5圖,所述待處理基片200具有缺口201,當所述待處理基片200置於基片槽101內時,所述缺口201朝向遠心段101a,且所述缺口201周圍的待處理基片200與所述遠心段101a接觸。Please refer to FIG. 5 , the substrate to be processed 200 has a
在本實施例中,所述待處理基片200的尺寸包括:2寸、3寸、4寸、5寸、6寸、8寸和12寸。當所述待處理基片200的尺寸發生改變時,即便是所述基片槽101的尺寸以及托盤100的材料相同,所述基片槽101各個區域對托盤100的加熱情况也不同。即:選擇不同尺寸的待處理基片200時,需適應性調整所述基片槽101的尺寸以提高在待處理基片200表面生長外延層的一致性。In this embodiment, the size of the substrate to be processed 200 includes: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches. When the size of the substrate to be processed 200 changes, even if the size of the
儘管托盤100沿X方向轉動,位於所述基片槽101內的待處理基片200在離心力的作用下向遠離托盤中心O的直徑方向移動,使得近心段101b基片槽101的側壁到待處理基片的距離較遠,但是,由於所述待處理基片200具有缺口201,使得缺口201周圍的待處理基片200與遠心段101a接觸後,不易發生滑動,並且,由於所述第一補償段101c到槽中心O1的距離R1大於所述近心段101b到槽中心O1的距離R2,使得待處理基片200側壁到第一補償段101c的距離與到所述近心段101b的距離差異减小,有利於减小基片槽101側壁各個區域對待處理基片200邊緣加熱效果的差異性,有利於提高在待處理基片200邊緣生長外延層的一致性。Although the
在本實施例中,所述第一距離R1與第二距離R2的差爲:0.1毫米~2毫米。所述第一距離R1與第二距離R2的差不至於過大也不至於過小,使得待處理基片200在離心力的作用下偏離托盤中心O之後,藉由缺口201與遠心段101a接觸後,所述第一補償段101c的側壁、近心段101b的側壁和遠心段101a的側壁與待處理基片200側壁之間的距離差異較小,那麽,所述第一補償段101c的側壁、近心段101b的側壁和遠心段101a的側壁對待處理基片200側壁的加熱效果差異性較小,有利於提高在待處理基片200邊緣生長外延層的一致性。In this embodiment, the difference between the first distance R1 and the second distance R2 is: 0.1 mm˜2 mm. The difference between the first distance R1 and the second distance R2 is neither too large nor too small, so that after the
在本實施例中,所述第一補償段101c的深度爲:0.5毫米~2毫米。所述第一補償段101c的深度可與近心端101b的深度相等;或者,所述第一補償段101c的深度可大於近心端101b的深度;或者,所述第一補償段101c的深度可小於近心端101b的深度;當所述第一補償段101c的深度可與近心端101b的深度相等,可藉由調整所述第一距離R1與第二距離R2的差值,使所述待處理基片到基片槽101的第一補償段101c距離與所述待處理基片到基片槽101的近心段101b距離相等,以提高待處理基片邊緣區域的溫度一致性;另外,可藉由調整所述第一補償段101c的深度和所述第一距離R1與第二距離R2的差值,使所述待處理基片在第一補償段101c和近心段101b的受熱均一性較好。In this embodiment, the depth of the
在本實施例中,所述遠心段101a到槽中心O1
的距離與近心段101b到槽中心O1
的距離R2相等。 In this embodiment, the distance from the
在本實施例中,所述遠心段101a和近心段101b之間第一補償段101c的個數爲2個,且2個所述第一補償段101c鏡像對稱分布於托盤中心O-槽中心O1
所在直線的兩側。In this embodiment, the number of the
第6圖是第1圖中另一種基片槽的結構示意圖。FIG. 6 is a schematic view of the structure of another substrate groove in FIG. 1 .
請參考第6圖,所述遠心段101a和近心段101b之間設置多個第一補償段101c。Please refer to FIG. 6 , a plurality of
在本實施例中,以所述第一補償段101c爲4個爲例進行說明,4個所述第一補償段101c鏡像分布於托盤中心O-槽中心O1
所在直線的兩側,在所述遠心段101a和近心段101b之間設置兩個第一補償段101c的意義在於:所述遠心段101a和近心段101b之間的區域最容易與待處理基片接觸或者距離過近,在所述遠心段101a和近心段101b之間設置多個第一補償段101c,有利於更加精確的控制遠心段101a和近心段101b之間基片槽101側壁到待處理基片的距離,進而縮小基片槽101側壁各個區域到待處理基片側壁的距離差異,有利於提高基片槽101周圍各個區域托盤100對待處理基片邊緣加熱效果的一致性,進而提高在待處理基片邊緣生長外延層的一致性。In this embodiment, the number of the first compensating
在其他實施例中,所述遠心段和近心段之間第一補償段的個數大於兩個。In other embodiments, the number of the first compensation segment between the distal segment and the proximal segment is greater than two.
第7圖是第1圖中又一種基片槽的結構示意圖。FIG. 7 is a schematic view of the structure of another substrate groove in FIG. 1 .
在本實施例中,所述遠心段101a還包括第二補償段101d,所述第二補償段101d到槽中心O1
的距離爲第三距離R3,所述第三距離R3大於第二距離R2。In this embodiment, the
在本實施例中,在所述遠心段101a設置第二補償段101d,且所述第二補償段101d到槽中心O1
的距離R3大於第二距離R2的意義在於:當所述待處理基片的缺口過於靠近遠心段101a,使所述第二補償段101d到槽中心O1
的距離R3大於第二距離R2,有利於使遠心段101a側壁到待處理基片的距離與近心段101b到待處理基片的距離差異較小,有利於降低遠心段101a側壁和近心段101b側壁對待處理基片加熱的差異性,有利於提高在待處理基片邊緣生長外延層的一致性。In this embodiment, the
第8圖是本發明一種化學氣相沉積裝置的結構示意圖。FIG. 8 is a schematic structural diagram of a chemical vapor deposition apparatus of the present invention.
請參考第8圖,反應腔300;位於所述反應腔300內的上述托盤。Please refer to FIG. 8 , the
所述托盤包括:托盤100,沿其中心軸轉動,設有若干個基片槽101,每個所述基片槽101包括遠離所述中心軸的遠心段、靠近所述中心軸的近心段和位於所述遠心段和近心段之間的第一補償段,所述基片槽101的近心段具有槽中心,所述第一補償段到槽中心的距離爲第一距離,所述近心段到槽中心的距離爲第二距離,所述第一距離大於第二距離。所述基片槽101用於容納待處理基片,當所述托盤100沿X方向轉動,待處理基片在離心力的作用下,易向遠離中心軸的方向移動,由於所述待處理基片具有缺口,且所述缺口朝向基片槽101的遠心段,使得所述缺口易與遠心段接觸且不易發生滑動,並且,由於所述第一補償段到槽中心的距離大於所述近心段到槽中心的距離,使得待處理基片側壁到第一補償段的距離與到所述近心段的距離差異减小,有利於减小基片槽101側壁各個區域對待處理基片加熱效果的差異性,有利於提高在待處理基片邊緣生長外延層的一致性。The tray includes: a
在本實施例中,所述化學氣相沉積裝置爲金屬有機化合物化學氣相沉積裝置。In this embodiment, the chemical vapor deposition apparatus is a metal organic compound chemical vapor deposition apparatus.
在其他實施例中,還可以爲其他類型的化學氣相沉積裝置。In other embodiments, other types of chemical vapor deposition apparatuses may also be used.
在本實施例中,還包括:加熱裝置,用於對所述托盤100加熱;氣體噴淋頭301,位於所述反應腔300內,與所述托盤相對設置;氣體輸送裝置302,用於向氣體噴淋頭301內輸送反應氣體。In this embodiment, it further includes: a heating device for heating the
雖然本發明披露如上,但本發明並非限定於此。任何本領域技術人員,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以申請專利範圍所限定的範圍為準。Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the scope of the patent application.
1:裝置
100:托盤
101:基片槽
101a:遠心段
101b:近心段
101c:第一補償段
101d:第二補償段
102:轉動軸
200:待處理基片
201:缺口
300:反應腔
301:氣體噴淋頭
302:氣體輸送裝置
O:中心
O1
:槽中心
R1:第一距離
R2:第二距離
R3:第三距離
X:方向1: Apparatus 100: Tray 101:
第1圖是本發明一種托盤的結構示意圖; 第2圖是第1圖托盤的俯視圖; 第3圖是本發明另一種托盤的俯視圖; 第4圖是第1圖中一種基片槽的結構示意圖; 第5圖是將待處理基片置於第4圖基片槽內的結構示意圖; 第6圖是第1圖中另一種基片槽的結構示意圖; 第7圖是第1圖中又一種基片槽的結構示意圖; 第8圖是本發明一種化學氣相沉積裝置的結構示意圖。Figure 1 is a schematic structural diagram of a tray of the present invention; Figure 2 is a top view of the tray in Figure 1; Figure 3 is a top view of another tray of the present invention; Figure 4 is a schematic structural diagram of a substrate slot in Figure 1; Fig. 5 is a schematic view of the structure of placing the substrate to be processed in the substrate groove of Fig. 4; Figure 6 is a schematic structural diagram of another substrate slot in Figure 1; Figure 7 is a schematic structural diagram of another substrate slot in Figure 1; FIG. 8 is a schematic structural diagram of a chemical vapor deposition apparatus of the present invention.
100:托盤100: Tray
101:基片槽101: Substrate slot
102:轉動軸102: Rotary shaft
300:反應腔300: reaction chamber
301:氣體噴淋頭301: Gas sprinkler
302:氣體輸送裝置302: Gas delivery device
O:中心O: Center
X:方向X: direction
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CN201911405406.7 | 2019-12-31 |
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