TWI773312B - Optical compensation method of micro light emitting diode display and micro light emitting diode packaging structure - Google Patents

Abstract

The present invention relates to an optical compensation method for a micro light-emitting diode display and a micro-luminescence The diode package structure, combined with the heterogeneous polycrystalline wafer-level packaging method, can integrate light-emitting diodes and control metal oxide semiconductor transistors within or between pixels to individually control the on-off brightness and color of each pixel. Second, electrostatic protection diodes can be integrated within or between pixels to individually protect each pixel from electrostatic damage. In this way, the influence of the parasitic capacitance of the connecting wire can be reduced, the image quality can be improved, and the power consumption of the brightness of the display can be optimized to improve the use efficiency of the power.

Description

Optical compensation method of micro light emitting diode display and micro light emitting diode package installation structure

The invention relates to an optical compensation method and a miniature LED packaging structure for a miniature LED display, especially a method for compensating a miniature LED display by controlling voltage and a miniature LED packaging structure.

In recent years, organic light-emitting diodes have been increasingly used as current-mode light-emitting devices in high-performance displays; due to the self-luminous properties of organic light-emitting diodes, compared with liquid crystal screens, active matrix organic light-emitting diodes (Active-matrix organic light-emitting diode; AMOLED for short) has the advantages of high contrast, ultra-thin, and bendable. However, there are currently two main problems of high uniformity and afterimage. To solve these two problems, compensation technology must be considered.

First, compared with amorphous silicon thin film transistors, low temperature polysilicon (LTPS) and oxide thin-film transistors (Oxide TFT) have higher mobility And stability, more suitable for application in AMOLED display. Low temperature polysilicon thin film transistors are mostly used in small and medium size applications, while oxide thin film transistors are mostly used in large size applications. For low temperature polysilicon thin film transistors fabricated on large-area glass substrates, the thin film transistors at different positions are at the threshold The phenomenon of non-uniformity in electrical parameters such as voltage and mobility, this non-uniformity will be transformed into the current difference and brightness difference of the organic light-emitting display diode display device, which is perceived by the human eye, which is the mura phenomenon. Although the uniformity of the oxide thin film transistor is good, its threshold voltage will drift under long-term pressure and high temperature. Different threshold shifts of thin-film transistors in different parts of the panel will cause differences in display brightness. Since this difference is related to the previously displayed image, it often appears as an afterimage phenomenon, which is commonly referred to as afterimage.

Therefore, in the current production technology, both low temperature polysilicon thin film transistors and oxide thin film transistors have problems of uniformity or stability, and the organic light emitting diode itself will gradually increase in brightness with the increase of lighting time. attenuation. Since these problems are difficult to overcome in the prior art, they need to be solved by various compensation techniques in design. To sum up, there is an urgent need for a suitable compensation technology to improve the problems of high uniformity and afterimage, and to effectively improve the problem of luminance attenuation of organic light emitting diodes.

In view of the shortcomings of the above-mentioned miniature light-emitting diode displays, the object of the present invention is to provide an optical compensation method for a miniature light-emitting diode display and a miniature light-emitting diode packaging structure, because the parameters affecting the current size are the mobility of thin film transistors , threshold voltage, OLED driving voltage and power supply voltage; therefore, the main purpose of the compensation technology of the present invention is to eliminate the influence of these factors, so that the brightness of all pixels can reach an ideal value.

In order to achieve the above object, the present invention provides an optical compensation method for micro light-emitting diodes, comprising: arranging an array of pixels and a plurality of metal oxide semiconductor transistors on a substrate, and each pixel has a red micro-light-emitting diode chip , green micro-LED chips and blue micro-LED chips, and the pixels are arranged at equal intervals; the red micro-LED chips, the green micro-LED chips, and the blue micro-LED chips The light-emitting diode chips are respectively provided with a metal-oxide-semiconductor transistor; a common electrode is connected to the source electrodes of the metal-oxide-semiconductor transistors to an input voltage; a gate electrode of the metal-oxide-semiconductor transistors is connected to a gate drive circuit; One end of each pixel is connected to a source driving circuit through a connecting line, and the other end of each pixel is respectively connected to the drains of the metal oxide semiconductor transistors, and the source driving circuit is connected to a point Brightening the red micro-LED chip, the green micro-LED chip and the blue micro-LED chip of each pixel and controlling the brightness; The voltage corresponding to the brightness of the bulk chip, the green micro-LED chip and the blue micro-LED chip, and the current flowing through each pixel is controlled to adjust the brightness.

In order to achieve the above-mentioned other object, the present invention is a miniature light-emitting diode package structure for use in the optical compensation method as described above. The miniature light-emitting diode package structure is connected to an input voltage, a source driving circuit and a gate A pole driving circuit, the miniature light-emitting diode packaging structure includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate; a plurality of groups of pixels are arranged on the substrate, and each pixel has a red micro-light-emitting diode a polar body chip, a green micro-LED chip and a blue micro-LED chip, the pixels are arranged at equal intervals; a plurality of metal oxide semiconductor transistors, the red micro-LED chip, the The green micro-LED chip and the blue micro-LED chip are respectively provided with a metal-oxide-semiconductor transistor correspondingly, and the metal-oxide-semiconductor transistors respectively have a source electrode whose common electrode is connected to the input voltage, a a gate and a drain connected to the gate driving circuit; and a connecting line, one end of each pixel is connected to the source driving circuit through the connecting line, and the other end of each pixel is respectively connected to the drain .

In order to achieve the above-mentioned other object, the present invention is a miniature light emitting diode package structure, which is used in the optical compensation method as mentioned above. The miniature light emitting diode package structure is connected with an input voltage, a A source driving circuit and a gate driving circuit, the miniature light-emitting diode packaging structure includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate; a plurality of metal oxide semiconductor transistors embedded in the inside the substrate; a hole embedded in the substrate; a plurality of groups of pixels are arranged on the substrate, each pixel has a red micro-LED chip, a green micro-LED chip and a blue micro-LED chip Polar body chip, the pixels are arranged at equal intervals, the red micro-LED chip, the green micro-LED chip and the blue micro-LED chip are respectively provided with a metal-oxide-semiconductor transistor correspondingly ; a metal block arranged on the substrate; a conductive paste, through which the red micro-LED chip, the green micro-LED chip and the blue micro-LED chip are respectively connected to each A metal oxide semiconductor transistor is connected, and the hole is connected with the metal block through the conductive paste; and a metal layer, through the metal layer, the N pole of the red micro-LED chip is connected with the metal block connected.

The method of the invention cooperates with the heterogeneous polycrystalline wafer-level packaging method, and can integrate light emitting diodes and control metal oxide semiconductor transistors in pixels or between pixels, and can individually control the on-off brightness and color of each pixel. Second, electrostatic protection diodes can be integrated within or between pixels to individually protect each pixel from electrostatic damage. In this way, the influence of the parasitic capacitance of the connecting wire can be reduced, the image quality can be improved, and the power consumption of the brightness of the display can be optimized to improve the use efficiency of the power.

According to the above-mentioned advantages, and in order to enable the examiners to have a better understanding of the present invention, a preferred embodiment is disclosed as follows. With the help of drawings and drawing numbers, the composition of the present invention and the effects achieved are described in detail as follows.

1: Miniature light-emitting diode package structure

10: Substrate

101: pressure sensitive adhesive layer

20: Pixels

201: Red Micro LED Chips

202: Green Micro-Light Emitting Diode Wafers

203: blue micro light emitting diode chip

30: Metal oxide semiconductor transistors

301: source

302: Drain

303: Gate

31: Input voltage

32: Holes

33: Metal Block

34: Conductive paste

35: Metal layer

40: Gate drive circuit

41: Connecting Lines

42: Connection circuit

43: Ground terminal

50: Source driver circuit

51: Video timing signal

52: Timing Controller

53: Operation unit

54: Digital to Analog Converters

Fig. 1a is a schematic view of the light emitting surface of the miniature light emitting diode package structure according to Embodiment 1 of the present invention; Fig. 1b is a schematic view of the backside opposite to the light emitting surface of the miniature light emitting diode package structure according to Embodiment 1 of the present invention; Figure 2 is a schematic diagram of a circuit according to Embodiment 1 of the present invention; Figure 3 is a schematic diagram of an optical compensation method according to Embodiment 1 of the present invention; Figure 4a is an embodiment of the present invention Figure 4b is a schematic diagram of the backside opposite to the light-emitting surface of the miniature light-emitting diode packaging structure according to the second embodiment of the present invention; Figure 5 is a schematic diagram of a circuit of Embodiment 2 of the present invention; Figure 6 is a schematic diagram of a light-emitting surface of a miniature light-emitting diode packaging structure of Embodiment 3 of the present invention; Figure 7 is an embodiment of the present invention 3 is a schematic structural diagram of a micro-LED package structure; FIG. 8 is a schematic diagram of a light-emitting surface of a micro-LED package structure according to Embodiment 4 of the present invention; and FIG. 9 is a micro-LED package according to Embodiment 4 of the present invention. Schematic diagram of the structure.

The embodiments of the present invention are described below by means of specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. In addition, the present invention can also be implemented or applied by other different specific embodiments, and various modifications and changes can be made without departing from the spirit of the present invention.

Please refer to FIGS. 1a to 1c. FIG. 1a is a schematic diagram of the light emitting surface of the micro light emitting diode package structure according to the first embodiment of the present invention; FIG. 1b is the light emitting surface opposite to the micro light emitting diode package structure according to the first embodiment of the present invention. Schematic diagram of the back side; and FIG. 1 c is a schematic structural diagram of the miniature light-emitting diode package structure according to Embodiment 1 of the present invention.

As shown in Figures 1a to 1c, the present invention is an optical compensation method for a miniature light-emitting diode display, comprising: taking a substrate 10, disposing a pressure-sensitive adhesive layer 101 thereon; disposing an array of pixels 20 and several metals The oxide semiconductor transistor 30 is on the pressure-sensitive adhesive layer 101 , the pixels 20 are arranged at equal intervals, and each pixel 20 has a red micro-LED chip 201 , a green micro-LED chip 202 and a blue micro-LED chip 202 The micro-LED chip 203; the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively provided with a metal-oxide-semiconductor transistor 30 correspondingly .

Please refer to FIG. 2 . FIG. 2 is a schematic circuit diagram of Embodiment 1 of the present invention.

As shown in FIG. 2 , in this embodiment, a common cathode driving method is used, and the pixels 20 are plural and have different colors and are grouped to form plural pixels 20 arranged in a matrix. Next, the source electrodes 301 of the MOS transistors 30 are connected to an input voltage 31 in common; the gate electrodes 303 connected to the MOS transistors 30 are connected to a gate driving circuit 40; by A connecting line 41 connects one end of each pixel 20 to a source driving circuit 50, and connects the other end of each pixel 20 to the drain electrodes 302 of the MOS transistors 30 respectively; connecting the source electrodes The driving circuit 50 lights up the red micro-LED chip 201 , the green micro-LED chip 202 and the blue micro-LED chip 203 of each pixel 20 and controls the brightness. Furthermore, voltages corresponding to the brightness of the red micro-LED chip 201 , the green micro-LED chip 202 and the blue micro-LED chip 203 are applied through the gate 303 driving circuit, and the voltages flowing through it are controlled. The current of each pixel 20 adjusts the brightness.

Please refer to FIG. 3 , which is a schematic diagram of the optical compensation method according to Embodiment 1 of the present invention.

As shown in FIG. 3, a video timing signal 51 obtains the timing signal of each pixel through a timing controller 52, obtains a horizontal synchronization signal and an RGB signal to be displayed from a vertical synchronization signal, and controls the gate in turn Illumination of the driver circuit 40 and the source driver circuit 50 . Next, a forward voltage drop of each pixel 20 is corrected by an arithmetic unit 53; wherein, the arithmetic The unit 53 is composed of a flash ROM, an adder and a multiplier, and stores the information of the forward voltage drop of each pixel 20 and the information about the color non-uniformity of the brightness in a memory , and the MOS transistors 30 mounted on each pixel 20 are supplied with data related to the color supplied to the gate driver circuit 40 by calculation through a digital-to-analog converter (D/A) 54 the input voltage of this gate. Furthermore, the source driving circuit 50 performs the horizontal direction control of each pixel while adjusting the brightness through a pulse width modulation.

As shown in FIGS. 1 to 3 , a miniature light-emitting diode package structure 1 is connected to an input voltage 31 , a source driving circuit 50 and a gate driving circuit 40 , and the micro-LED packaging structure 1 includes a plurality of arrays arranged Each packaging module includes a substrate 10, a plurality of groups of pixels 20, a plurality of metal oxide semiconductor transistors 30 and a connection circuit 41; wherein, the pixels 20 are arranged on the substrate 10, each The pixel 20 has a red micro-LED chip 201 , a green micro-LED chip 202 and a blue micro-LED chip 203 , and the pixels 20 are arranged at equal intervals. Next, the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively provided with a metal oxide semiconductor transistor 30, and the metal oxide The semiconductor transistors 30 respectively have a source electrode 301 connected to the input voltage 31 in common, a gate electrode 303 connected to the metal oxide semiconductor transistors 30 of the gate drive circuit 40 , and a gate electrode connected to the connection line 41 . The drains 302 of the MOS transistors 30 . Furthermore, one end of each pixel 20 is connected to the source driving circuit 50 through the connecting line 41 , and the other end of each pixel 20 is connected to the drain electrode 302 respectively.

Please refer to FIGS. 4a to 4c. FIG. 4a is a schematic diagram of the light emitting surface of the micro light emitting diode package structure according to the second embodiment of the present invention; FIG. 4b is the light emitting surface opposite to the light emitting surface of the micro light emitting diode package structure according to the second embodiment of the present invention. Schematic diagram of the back side; and FIG. 4 c is a schematic structural diagram of the package structure of the miniature light-emitting diode according to the second embodiment of the present invention.

As shown in FIGS. 4 a to 4 c , Embodiment 2 is substantially the same as Embodiment 1, and the difference lies in the disposition of the MOS transistor 30 . The source electrode of the MOS transistor 30 in Embodiment 1 is different. 301 and the gate electrode 303 are disposed adjacent to the pressure-sensitive adhesive layer 101 ; in the second embodiment, the drain electrode 302 of the metal oxide semiconductor transistor 30 is disposed adjacent to the pressure-sensitive adhesive layer 101 .

Please refer to FIG. 5 , which is a schematic circuit diagram of Embodiment 2 of the present invention.

As shown in FIG. 4 a to FIG. 5 , an optical compensation method for a micro light-emitting diode display includes: arranging array pixels 20 and a plurality of metal oxide semiconductor transistors 30 on a substrate 10 , and a pressure sensitive device is arranged on the substrate 10 The adhesive layer 101, each pixel 20 has a red micro-LED chip 201, a green micro-LED chip 202 and a blue micro-LED chip 203, and the pixels 20 are arranged at equal intervals; the red The micro LED chip 201 , the green micro LED chip 202 and the blue micro LED chip 203 are respectively provided with a metal oxide semiconductor transistor 30 . As shown in FIG. 5 , in the second embodiment, the common cathode driving mode is adopted, and the pixels 20 are plural and have different colors and are grouped to form plural pixels 20 arranged in a matrix. Next, a source electrode 301 of the MOS transistors 30 is connected to one end of each pixel 20; a gate electrode 303 of the MOS transistors 30 is connected to a gate driving circuit 40; A drain electrode 302 of the MOS transistors 30 is connected to a connection line 41, the connection line 41 is connected to a source drive circuit 50 through the input voltage 31, and the source drive circuit 50 is connected to a point The red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 of each pixel are illuminated and the brightness is controlled; The other end of 20 is commonly connected to a ground terminal 43 . In addition, a voltage corresponding to the brightness of the red micro-LED chip 201, the green micro-LED chip 202, and the blue micro-LED chip 203 is applied through the gate driving circuit 40, and the voltages flowing through each of the LED chips 201 are controlled. The current of a pixel 20 adjusts the brightness.

As shown in FIGS. 4 a to 5 , a miniature light-emitting diode package structure 1 is used in the optical compensation method of the second embodiment, and is connected with an input voltage 31 , a source driving circuit 50 and a gate driving circuit 40 , and the miniature light-emitting diode is connected with an input voltage 31 , a source driving circuit 50 and a gate driving circuit 40 The diode packaging structure 1 includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate 10, a plurality of groups of pixels 20, a plurality of metal oxide semiconductor transistors 30 and a connecting line 41; wherein, these The pixels 20 are disposed on the substrate 10 at equal intervals, and each pixel 20 has a red micro-LED chip 201 , a green micro-LED chip 202 and a blue micro-LED chip 203 . Next, the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively provided with a metal oxide semiconductor transistor 30, and the metal oxide The semiconductor transistors 30 respectively have a source electrode 301 connected to one end of each pixel 20 , a gate electrode 303 connected to the metal oxide semiconductor transistors 30 of the gate driving circuit 40 , and a gate electrode 303 connected to the connection line 41 . The drain electrodes 302 of the metal oxide semiconductor transistors 30; and the drain electrodes 302 of the metal oxide semiconductor transistors 30 are connected to the connection line 41 in common, and the other end of the connection line 41 passes the input voltage 31 is connected to the source driving circuit 50 , and the other end of each pixel 20 is commonly connected to a ground terminal 43 through a connection line 42 .

Please refer to FIG. 5 to FIG. 7 . FIG. 6 is a schematic diagram of a light emitting surface of the miniature light emitting diode packaging structure according to Embodiment 3 of the present invention; and FIG. 7 is a schematic structural diagram of the miniature light emitting diode packaging structure according to Embodiment 3 of the present invention.

As shown in FIG. 5 to FIG. 7 , a miniature light emitting diode package structure 1 is used for the optical compensation method of the second embodiment, and the micro light emitting diode package structure 1 is connected to the input voltage 31 and the source driving circuit 50 . and the gate driving circuit 40, the miniature light emitting diode package structure 1 includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate 10, a plurality of metal oxide semiconductor transistors 30, a plurality of holes 32. A plurality of groups of pixels 20, a metal block 33, a conductive paste 34 and a metal layer 35; wherein the metal oxide semiconductor transistors 30 and the holes 32 are embedded in the Inside the substrate 10 , the MOS transistors 30 are disposed adjacent to the holes 32 . Next, the pixels 20 and the metal block 33 are disposed on the substrate 10 , and each pixel 20 has a red micro-LED chip 201 , a green micro-LED chip 202 and a blue micro-LED chip 202 The bulk chip 203, the pixels 20 are arranged at equal intervals and the metal block 33 is arranged adjacent to the red micro-LED chip 201, the red micro-LED chip 201, the green micro-LED chip 202 And the blue micro-LED chip 203 is respectively provided with a metal oxide semiconductor transistor 30; the electrode of the red micro-LED chip 201 is a vertical structure, the green micro-LED chip 202 And the electrode of the blue micro-LED chip 203 is a horizontal structure. Furthermore, through the conductive paste 34, the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively connected to each metal oxide semiconductor transistor 30. and each hole 32 is connected, and the hole 32 is connected with the metal block 33 through the conductive paste 34; and the N pole of the red micro-LED chip 201 is connected with the metal block 33 through the metal layer 35 connected.

Please refer to FIG. 8 and FIG. 9 , FIG. 8 is a schematic view of the light emitting surface of the miniature light emitting diode package structure according to Embodiment 4 of the present invention; and FIG. 9 is a schematic structural diagram of the miniature light emitting diode package structure according to Embodiment 4 of the present invention.

As shown in FIG. 5 , FIG. 8 and FIG. 9 , a miniature light-emitting diode package structure 1 is used for the optical compensation method of Embodiment 2. The miniature light-emitting diode package structure 1 is connected to an input voltage 31 and a source electrode The drive circuit 50 and a gate drive circuit 40, the miniature light-emitting diode package structure 1 includes a plurality of package modules arranged in an array, each package module includes a substrate 10, a plurality of metal oxide semiconductor transistors 30, a Holes 32 , a plurality of groups of pixels 20 , a metal block 33 , a conductive paste 34 and a metal layer 35 ; wherein the metal oxide semiconductor transistors 30 and the holes 32 are embedded in the substrate 10 . Next, the pixels 20 and the metal block 33 are disposed on the substrate 10, and each pixel 20 has a red micro-LED chip 201, a green micro-LED chip 202 and a blue micro-LED chip 202 The micro-LED chip 203, the pixels 20 are arranged at equal intervals, the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively arranged correspondingly There is a metal-oxide-semiconductor transistor 30; wherein, the electrodes of the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are all vertical structures. Furthermore, through the conductive paste 34, the red micro-LED chip 201, the green micro-LED chip 202 and the blue micro-LED chip 203 are respectively connected to each metal oxide semiconductor transistor 30. and connect the hole 32 and the metal block 33 through the conductive paste 34; and through the metal layer 35, the N pole of the red micro-LED chip 201 and the green micro-LED chip 202 and the N pole of the blue micro-LED chip 203 are connected to the metal block 33 .

The above-mentioned embodiments are only examples for convenience of description, and the scope of the claims claimed in the present invention should be based on the scope of the patent application, rather than being limited to the above-mentioned embodiments.

20: Pixels

201: Red Micro LED Chips

202: Green Micro-Light Emitting Diode Wafers

203: blue micro light emitting diode chip

30: Metal oxide semiconductor transistors

301: source

302: Drain

303: Gate

31: Input voltage

40: Gate drive circuit

50: Source driver circuit

Claims (9)

An optical compensation method for a miniature light-emitting diode display, comprising: arranging array pixels and several metal-oxide-semiconductor transistors on a substrate, each pixel having a red micro-LED chip and a green micro-LED chip and blue micro-LED chips, and the pixels are arranged at equal intervals; the red micro-LED chips, the green micro-LED chips, and the blue micro-LED chips are respectively arranged correspondingly one of the metal oxide semiconductor transistors; the common electrode is connected to the source electrodes of the metal oxide semiconductor transistors to an input voltage; the gate electrode of the metal oxide semiconductor transistors is connected to a gate drive circuit; by A connecting line connects one end of each pixel to a source driver circuit, and connects the other end of each pixel to the drain electrodes of the MOS transistors respectively, and connects the source driver circuit to a point Brighten the red micro-LED chip, the green micro-LED chip and the blue micro-LED chip of each pixel and control the brightness; apply the red micro-LED chip to the red micro-LED chip through the gate drive circuit voltage corresponding to the brightness of the polar body chip, the green micro-LED chip and the blue micro-LED chip, and control the current flowing through each pixel to adjust the brightness; and correct the brightness through an arithmetic unit A forward voltage drop of each pixel, the information of the forward voltage drop of each pixel and the information about the color non-uniformity of luminance are stored in a memory. The optical compensation method described in item 1 of the claimed scope further comprises obtaining the timing signal of each pixel through a timing controller, obtaining a horizontal synchronization signal and an RGB signal to be displayed from a vertical synchronization signal, and sequentially The lighting of the gate driver circuit and the source driver circuit is controlled. The optical compensation method described in item 1 of the scope of the application further comprises a digital-to-analog converter, and the digital-to-analog converter provides the gate driving circuit with the result of calculation through the digital-to-analog converter The color-related data of is supplied to the voltage input of the gates of the MOS transistors mounted on the each pixel. The optical compensation method of claim 1, wherein the operation unit is composed of a flash ROM, an adder and a multiplier. The optical compensation method as described in claim 1, wherein the source driver circuit controls the horizontal direction of each pixel while adjusting the brightness through a pulse width modulation. A miniature light-emitting diode package structure is used for the optical compensation method as described in claims 1 to 5 of the patent application scope, the miniature light-emitting diode package structure is connected with an input voltage, a source driving circuit and a gate driving circuit, the miniature light-emitting diode packaging structure includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate; a plurality of groups of pixels are arranged on the substrate, and each pixel has a red micro-light-emitting diode chip, a green micro-LED chip and a blue micro-LED chip, the pixels are arranged at equal intervals; a plurality of metal oxide semiconductor transistors, the red micro-LED chip, the green micro-LED chip The light-emitting diode chip and the blue micro light-emitting diode chip are respectively provided with one of the metal-oxide-semiconductor transistors, and the metal-oxide-semiconductor transistors respectively have a source electrode whose common pole is connected to the input voltage, a The gate electrodes of the metal oxide semiconductor transistors connected to the gate driving circuit and the drain electrodes of the metal oxide semiconductor transistors connected to the connection line; a connection line, one end of each pixel by is connected to the source driving circuit by the connection line, and the other end of each pixel is connected to the drain respectively; and an arithmetic unit, through which a forward voltage drop of each pixel is corrected, and the information of the forward voltage drop of each pixel and the information about the color non-uniformity of luminance are stored in a memory. A miniature light-emitting diode package structure is used for the optical compensation method as described in claims 1 to 5 of the patent application scope, the miniature light-emitting diode package structure is connected with an input voltage, a source driving circuit and a gate driving circuit, the miniature light-emitting diode packaging structure includes a plurality of packaging modules arranged in an array, and each packaging module includes: a substrate; a plurality of metal oxide semiconductor transistors embedded in the substrate; a hole embedded in the substrate In the substrate; a plurality of groups of pixels are arranged on the substrate, each pixel has a red micro-LED chip, a green micro-LED chip and a blue micro-LED chip, the pixels are equidistant The red micro-LED chips, the green micro-LED chips and the blue micro-LED chips are respectively provided with one of the metal oxide semiconductor transistors; a metal block is arranged on the substrate top; a conductive paste, through which the red micro-LED chip, the green micro-LED chip and the blue micro-LED chip are respectively connected to each metal oxide semiconductor transistor , and the hole is connected with the metal block through the conductive paste; and a metal layer is used to connect the N pole of the red micro-LED chip with the metal block through the metal layer. The micro-LED package structure as claimed in claim 7, wherein the electrode of the red micro-LED chip is a vertical structure, the green micro-LED chip and the blue micro-LED chip are in a vertical structure. The electrode system of the diode wafer is a horizontal structure. The miniature light-emitting diode package structure as described in claim 7, wherein the red micro-LED chip, the green micro-LED chip and the blue micro-LED The electrodes of the diode chip are all in a vertical structure, and the N pole of the red micro-LED chip, the N pole of the green micro-LED chip and the blue micro-LED chip pass through the metal layer. The N pole of the bulk wafer is connected to the metal block.

Images