TWI772801B - High-purity sulfuric acid manufacturing apparatus and high-purity sulfuric acid - Google Patents

High-purity sulfuric acid manufacturing apparatus and high-purity sulfuric acid Download PDF

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TWI772801B
TWI772801B TW109116718A TW109116718A TWI772801B TW I772801 B TWI772801 B TW I772801B TW 109116718 A TW109116718 A TW 109116718A TW 109116718 A TW109116718 A TW 109116718A TW I772801 B TWI772801 B TW I772801B
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sulfuric acid
aeration
purity
absorption tower
process equipment
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TW202144282A (en
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呂志鵬
曾恆毅
吳駿源
鄭語萱
干文元
吳旻祐
吳治郎
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義鎧科技股份有限公司
臺灣中華化學工業股份有限公司
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Abstract

The present invention provides a high-purity sulfuric acid manufacturing apparatus, including an absorption tower and a phased stripping structure. The absorption tower has solvent. Sulfur trioxide (SO3) gas enters the absorption tower and is absorbed by the solvent to become to-be-stripped sulfuric acid. Impurities are removed from the to-be-stripped sulfuric acid through a phased stripping process in the phased stripping structure, to become high-purity sulfuric acid. The phased stripping structure includes a first stripping device and a second stripping device. First stripping temperature of the first stripping device is different from second stripping temperature of the second stripping device.

Description

高純度硫酸製程設備及高純度硫酸 High-purity sulfuric acid process equipment and high-purity sulfuric acid

本發明是關於高純度硫酸製程設備及高純度硫酸。 The present invention relates to high-purity sulfuric acid process equipment and high-purity sulfuric acid.

硫酸(sulfuric acid)屬於二元無機強酸。已知硫酸為無色或淡黃色的透明液體。在描述硫酸時,「濃度」是用來表示溶質與溶劑的比例,通常以質量百分濃度(%)為單位;而「純度」則是用來表示雜質的多寡,雜質含量愈低,則純度愈高。 Sulfuric acid is a binary inorganic strong acid. Sulfuric acid is known as a colorless or pale yellow transparent liquid. When describing sulfuric acid, "concentration" is used to indicate the ratio of solute to solvent, usually in mass percent concentration (%); and "purity" is used to indicate the amount of impurities. The lower the impurity content, the higher the purity. higher.

所謂的「工業級」普通純度硫酸,其中特定關注項目(主要是金屬離子)的雜質含量約為百萬分之一(parts per million,ppm),又稱為「ppm等級」硫酸。 The so-called "industrial grade" ordinary-purity sulfuric acid, in which the impurity content of specific items of concern (mainly metal ions) is about one part per million (ppm), also known as "ppm grade" sulfuric acid.

所謂的「電子級」高純度硫酸,其中特定關注項目的雜質含量約為十億分之一(parts per billion,ppb),又稱為「ppb等級」硫酸。在「電子級」高純度硫酸中,又有所謂的「半導體級」超高純度硫酸,其中特定關注項目的雜質含量約為兆分之一(parts per trillion,ppt),又稱為「ppt等級」硫酸。 The so-called "electronic grade" high-purity sulfuric acid, in which the impurity content of the specific item of interest is about one part per billion (ppb), also known as "ppb grade" sulfuric acid. Among the "electronic grade" high-purity sulfuric acid, there is also the so-called "semiconductor grade" ultra-high-purity sulfuric acid, in which the impurity content of a specific item of concern is about one part per trillion (ppt), also known as "ppt grade" "sulfuric acid.

然而,目前傳統的硫酸製程尚無法提供雜質含量甚低的高純度硫酸。因此,亟須提出一種改良的高純度硫酸製程設備,以消除或緩和上述問題。 However, the current traditional sulfuric acid production process is still unable to provide high-purity sulfuric acid with very low impurity content. Therefore, there is an urgent need to provide an improved high-purity sulfuric acid process equipment to eliminate or alleviate the above-mentioned problems.

圖1顯示一種硫酸製程的流程圖。 Figure 1 shows a flow chart of a sulfuric acid process.

硫(通常為S8)在空氣中燃燒後,產生二氧化硫(SO2)。以五氧化二釩(V2O5)為催化劑將SO2轉換成三氧化硫(SO3)。SO3為硫酸(H2SO4)所吸收而形成發煙硫酸(oleum),發煙硫酸可再產生SO3,SO3再由硫酸吸收成為高濃度硫酸。高濃度硫酸是以水來稀釋成特定濃度,然後以壓縮乾燥空氣(compressed dry air,CDA)來曝氣而形成最終產品。 Sulfur (usually S 8 ) is combusted in air to produce sulfur dioxide (SO 2 ). SO 2 is converted into sulfur trioxide (SO 3 ) using vanadium pentoxide (V 2 O 5 ) as a catalyst. SO 3 is absorbed by sulfuric acid (H 2 SO 4 ) to form oleum, which can be regenerated into SO 3 , which is then absorbed by sulfuric acid into high-concentration sulfuric acid. High concentration sulfuric acid is diluted with water to a specific concentration and then aerated with compressed dry air (CDA) to form the final product.

根據本發明的一種觀點,提出一種高純度硫酸製程設備,包括一吸收塔及一分階段曝氣構造。吸收塔具有溶劑(例如,循環酸)。三氧化硫氣體進入吸收塔而由溶劑所吸收,成為待曝氣硫酸。待曝氣硫酸經由分階段曝氣構造的分階段曝氣程序而去除雜質,成為高純度硫酸。分階段曝氣構造包括一第一曝氣裝置與一第二曝氣裝置,第一曝氣裝置的第一曝氣溫度不同於第二曝氣裝置的第二曝氣溫度。 According to one aspect of the present invention, a high-purity sulfuric acid process equipment is proposed, which includes an absorption tower and a staged aeration structure. The absorption column has solvent (eg, circulating acid). The sulfur trioxide gas enters the absorption tower and is absorbed by the solvent to become sulfuric acid to be aerated. The sulfuric acid to be aerated is removed from impurities through the staged aeration process of the staged aeration structure to become high-purity sulfuric acid. The staged aeration structure includes a first aeration device and a second aeration device, and the first aeration temperature of the first aeration device is different from the second aeration temperature of the second aeration device.

本發明透過分階段曝氣構造的設計,將第一曝氣裝置的第一曝氣溫度設定成不同於第二曝氣裝置的第二曝氣溫度,可減少壓縮乾燥空氣的用量。具體而言,在製備出相同純度的硫酸的前提下,本發明的高純度硫酸製程設備,因為有使用分階段曝氣構造,其所需的壓縮乾燥空氣用量是不使用分階段曝氣構造的硫酸製程設備所需的壓縮乾燥空氣用量的三分之二或更少,故可有效節省資源。 The present invention can reduce the consumption of compressed drying air by setting the first aeration temperature of the first aeration device to be different from the second aeration temperature of the second aeration device through the design of the staged aeration structure. Specifically, under the premise of preparing sulfuric acid of the same purity, the high-purity sulfuric acid process equipment of the present invention uses a staged aeration structure, and the required amount of compressed drying air is not based on the staged aeration structure. Two-thirds or less of the compressed dry air required by the sulfuric acid process equipment, so it can effectively save resources.

可選地或較佳地,第一曝氣裝置串聯在吸收塔與第二曝氣裝置之間。 Optionally or preferably, the first aeration device is connected in series between the absorption tower and the second aeration device.

可選地或較佳地,第一曝氣溫度高於第二曝氣溫度。 Optionally or preferably, the first aeration temperature is higher than the second aeration temperature.

可選地或較佳地,第一曝氣裝置的第一壓縮乾燥空氣流量不同於第二曝氣裝置的第二壓縮乾燥空氣流量。 Optionally or preferably, the first compressed drying air flow rate of the first aeration device is different from the second compressed drying air flow rate of the second aeration device.

可選地或較佳地,第一壓縮乾燥空氣流量為第二壓縮乾燥空氣流量的1倍~5倍。 Optionally or preferably, the flow rate of the first compressed drying air is 1 to 5 times the flow rate of the second compressed drying air.

可選地或較佳地,本發明的高純度硫酸製程設備更包括一循環構造,循環構造包括一分階段冷卻構造設置在第一曝氣裝置與吸收塔之間。 Optionally or preferably, the high-purity sulfuric acid process equipment of the present invention further includes a circulation structure, and the circulation structure includes a staged cooling structure disposed between the first aeration device and the absorption tower.

可選地或較佳地,超純水進入吸收塔。 Optionally or preferably, the ultrapure water enters the absorption tower.

可選地或較佳地,溶劑為超純水或硫酸;雜質包括二氧化硫。 Optionally or preferably, the solvent is ultrapure water or sulfuric acid; impurities include sulfur dioxide.

根據本發明的另一種觀點,提出一種高純度硫酸,是由上述高純度硫酸製程設備所製備而成者。 According to another aspect of the present invention, a high-purity sulfuric acid is provided, which is prepared by the above-mentioned high-purity sulfuric acid process equipment.

進一步地,其濃度為95%至99%,其純度為二氧化硫含量小於0.5ppm。更進一步地,其純度為鐵(Fe)、鈣(Ca)、鋁(Al)、鉻(Cr)、鎳(Ni)、錳(Mn)、鉬(Mo)、鎂(Mg)、鉀(K)、納(Na)、或鋅(Zn)、或其離子含量小於10ppt。 Further, its concentration is 95% to 99%, and its purity is that the sulfur dioxide content is less than 0.5 ppm. Further, its purity is iron (Fe), calcium (Ca), aluminum (Al), chromium (Cr), nickel (Ni), manganese (Mn), molybdenum (Mo), magnesium (Mg), potassium (K) ), sodium (Na), or zinc (Zn), or its ion content is less than 10 ppt.

下文將配合圖式並詳細說明,使本發明的其他目的、優點、及新穎特徵更明顯。 The accompanying drawings and detailed descriptions will hereinafter make other objects, advantages, and novel features of the present invention more apparent.

100:高純度硫酸製程設備 100: High-purity sulfuric acid process equipment

110:吸收塔 110: Absorption tower

120:第一曝氣裝置 120: The first aeration device

130:第一冷卻裝置 130: First cooling device

140:第二冷卻裝置 140: Second cooling device

150:第二曝氣裝置 150: Second aeration device

160:純化裝置 160: Purification device

200:高純度硫酸製程設備 200: High-purity sulfuric acid process equipment

210:吸收塔 210: Absorption tower

230:第一冷卻裝置 230: First cooling device

240:第二冷卻裝置 240: Second cooling device

250:曝氣裝置 250: Aeration device

圖1顯示一種傳統的硫酸製程的流程圖。 Figure 1 shows a flow chart of a conventional sulfuric acid process.

圖2顯示一比較例的高純度硫酸製程設備的構造示意圖。 FIG. 2 shows a schematic structural diagram of a high-purity sulfuric acid process equipment of a comparative example.

圖3及圖4分別顯示本發明的一實施例及另一實施例的高純度硫酸製程設備的構造示意圖。 FIG. 3 and FIG. 4 are schematic diagrams showing the structure of high-purity sulfuric acid process equipment according to one embodiment and another embodiment of the present invention, respectively.

以下提供本發明的不同實施例。這些實施例是用於說明本發明的技術內容,而非用於限制本發明的權利範圍。一實施例的一特徵可透過合適的修飾、置換、組合、分離以應用於其他實施例。 Various embodiments of the present invention are provided below. These embodiments are used to illustrate the technical content of the present invention, but not to limit the scope of the right of the present invention. A feature of one embodiment can be applied to other embodiments by suitable modification, substitution, combination, isolation.

應注意的是,在本文中,除了特別指明者之外,具備「一」元件不限於具備單一的該元件,而可具備一或更多的該元件。 It should be noted that, in this document, unless otherwise specified, having "a" element is not limited to having a single such element, but may include one or more such elements.

此外,在本文中,除了特別指明者之外,「第一」、「第二」等序數,只是用於區別具有相同名稱的多個元件,並不表示它們之間存在位階、層級、執行順序、或製程順序。一「第一」元件與一「第二」元件可能一起出現在同一構件中,或分別出現在不同構件中。序數較大的一元件的存在不必然表示序數較小的另一元件的存在。 In addition, in this document, unless otherwise specified, ordinal numbers such as "first" and "second" are only used to distinguish multiple elements with the same name, and do not mean that there is a rank, hierarchy, or execution order among them , or process sequence. A "first" element and a "second" element may appear together in the same component or separately in different components. The presence of an element with a higher ordinal number does not necessarily imply the presence of another element with a lower ordinal number.

此外,在本文中,所謂的「上」、「下」、「左」、「右」、「前」、「後」、或「之間」等用語,只是用於描述多個元件之間的相對位置,並在解釋上可推廣成包括平移、旋轉、或鏡射的情形。 In addition, in this document, the so-called "upper", "lower", "left", "right", "front", "rear", or "between" and other terms are only used to describe the relationship between multiple elements. Relative position, and can be generalized to include translation, rotation, or mirroring.

此外,在本文中,除了特別指明者之外,「一元件在另一元件上」或類似敘述不必然表示該元件接觸該另一元件。 Furthermore, herein, unless specifically stated otherwise, "an element is on another element" or the like does not necessarily mean that the element is in contact with the other element.

此外,在本文中,除了特別指明者之外,二元件的連接可包括直接連接或間接連接。在間接連接中,該二元件之間可能存在一或多個其他元件。 Furthermore, herein, unless otherwise specified, the connection of two elements may include direct connection or indirect connection. In an indirect connection, one or more other elements may be present between the two elements.

此外,在本文中,除了特別指明者之外,一數值是指包括該數值 的±10%的範圍,特別是該數值±5%的範圍。除了特別指明者之外,一數值範圍是由較小端點數、較小四分位數、中位數、較大四分位數、及較大端點數所定義的多個子範圍所組成。 Further, herein, unless otherwise specified, a numerical value is meant to include the numerical value the range of ±10%, especially the range of ±5% of the value. Unless otherwise specified, a numerical range is composed of subranges defined by the lower endpoint, lower quartile, median, higher quartile, and higher endpoint .

此外,在摘要、說明書、申請專利範圍、或圖式中,除了特別指明者之外,一元件「適合於」另一元件、一組態、或一動作,其描述的是該元件的特徵,而不表示該另一元件、該組態、或該動作的存在。 Furthermore, unless otherwise specified in the abstract, specification, scope of claims, or drawings, an element is "suitable for" another element, a configuration, or an action that describes a feature of the element, does not imply the existence of the other element, the configuration, or the action.

(比較例) (Comparative example)

圖2顯示一比較例的硫酸製程設備200的構造示意圖。 FIG. 2 shows a schematic structural diagram of a sulfuric acid process equipment 200 of a comparative example.

吸收塔210的一出口連接至第一冷卻裝置230的一入口。第一冷卻裝置230的一出口連接至曝氣裝置250的一入口。另一方面,第一冷卻裝置230的另一出口連接至第二冷卻裝置240的一入口。第二冷卻裝置240的一出口連接至吸收塔210的一入口。 An outlet of the absorption tower 210 is connected to an inlet of the first cooling device 230 . An outlet of the first cooling device 230 is connected to an inlet of the aeration device 250 . On the other hand, another outlet of the first cooling device 230 is connected to an inlet of the second cooling device 240 . An outlet of the second cooling device 240 is connected to an inlet of the absorption tower 210 .

吸收塔210可輸入超純水及三氧化硫(SO3)氣體。超純水與SO3氣體混合形成硫酸。硫酸可能包括雜質,故須經由曝氣裝置250的曝氣程序來去除雜質,成為高純度硫酸。 The absorption tower 210 can input ultrapure water and sulfur trioxide (SO 3 ) gas. Ultrapure water is mixed with SO3 gas to form sulfuric acid . Sulfuric acid may include impurities, so the aeration process of the aeration device 250 is required to remove the impurities to become high-purity sulfuric acid.

值得注意的是,在比較例中,曝氣裝置250的壓縮乾燥空氣流量需要3000LPM或以上。(LPM是指公升/分鐘,以下亦同。) It is worth noting that, in the comparative example, the compressed drying air flow rate of the aeration device 250 needs to be 3000 LPM or more. (LPM means liters per minute, the same applies hereinafter.)

(實施例) (Example)

圖3顯示本發明的一實施例的高純度硫酸製程設備100的構造示意圖。圖4顯示本發明的另一實施例的高純度硫酸製程設備100的構造示意圖。 FIG. 3 shows a schematic structural diagram of a high-purity sulfuric acid process equipment 100 according to an embodiment of the present invention. FIG. 4 shows a schematic structural diagram of a high-purity sulfuric acid process equipment 100 according to another embodiment of the present invention.

高純度硫酸製程設備100最基本包括一吸收塔110及一分階段曝氣構造。 The high-purity sulfuric acid process equipment 100 basically includes an absorption tower 110 and a staged aeration structure.

吸收塔110的一出口連接至第一曝氣裝置120的一入口。第一曝氣裝置120的一出口連接至第二曝氣裝置150的一入口。第一曝氣裝置120與第二曝氣裝置150構成分階段曝氣構造。 An outlet of the absorption tower 110 is connected to an inlet of the first aeration device 120 . An outlet of the first aeration device 120 is connected to an inlet of the second aeration device 150 . The first aeration device 120 and the second aeration device 150 constitute a staged aeration structure.

另一方面,第一曝氣裝置120的另一出口連接至第一冷卻裝置130的一入口。第一曝氣裝置120與第一冷卻裝置130可分離成二裝置或整合成單一裝置。第一冷卻裝置130的一出口連接至第二冷卻裝置140的一入口。第二冷卻裝置140的一出口連接至吸收塔110的一入口。第一冷卻裝置130與第二冷卻裝置140構成一分階段冷卻構造。吸收塔110、第一曝氣裝置120、及分階段冷卻構造則構成一循環構造。第一冷卻裝置130與第二冷卻裝置140可具有相同或不同溫度。 On the other hand, another outlet of the first aeration device 120 is connected to an inlet of the first cooling device 130 . The first aeration device 120 and the first cooling device 130 can be separated into two devices or integrated into a single device. An outlet of the first cooling device 130 is connected to an inlet of the second cooling device 140 . An outlet of the second cooling device 140 is connected to an inlet of the absorption tower 110 . The first cooling device 130 and the second cooling device 140 form a staged cooling structure. The absorption tower 110, the first aeration device 120, and the staged cooling structure constitute a circulation structure. The first cooling device 130 and the second cooling device 140 may have the same or different temperatures.

由於第一曝氣裝置120已取代圖2的比較例的第一冷卻裝置230的位置,而具有分流的功能,在其他實施例中,高純度硫酸製程設備100亦可不採用分階段冷卻構造,而省去第一冷卻裝置130與第二冷卻裝置140的其中之一,如圖4所示,或將第一冷卻裝置130與第二冷卻裝置140整合成單一裝置。 Since the first aeration device 120 has replaced the position of the first cooling device 230 of the comparative example in FIG. 2 and has the function of dividing the flow, in other embodiments, the high-purity sulfuric acid process equipment 100 may not adopt the staged cooling structure, but One of the first cooling device 130 and the second cooling device 140 is omitted, as shown in FIG. 4 , or the first cooling device 130 and the second cooling device 140 are integrated into a single device.

在運作上,吸收塔110具有溶劑。溶劑可為超純水或硫酸(H2SO4),較佳是濃硫酸,特別是90%~99%,更特別是96%。硫酸可由超純水與SO3氣體混合而形成。吸收塔110具有一液體輸入口可輸入超純水。吸收塔110還具有一氣體輸入口可輸入SO3氣體。SO3氣體進入吸收塔110而由溶劑(超純水、硫酸、或濃硫酸)所吸收,成為待曝氣硫酸。待曝氣硫酸可以超純水來稀釋成所需的濃度的硫酸,通常為98%的硫酸,但不限於此,接著進入曝氣程序。硫酸可能包括雜質,例如,二氧化硫(SO2),故須經由分階段曝氣構造的分階段曝氣程序來去 除雜質,成為高純度硫酸。 In operation, the absorption column 110 has solvent. The solvent can be ultrapure water or sulfuric acid (H 2 SO 4 ), preferably concentrated sulfuric acid, especially 90%-99%, more especially 96%. Sulfuric acid can be formed by mixing ultrapure water with SO3 gas. The absorption tower 110 has a liquid input port for inputting ultrapure water. The absorption tower 110 also has a gas input port for inputting SO 3 gas. The SO 3 gas enters the absorption tower 110 and is absorbed by the solvent (ultra-pure water, sulfuric acid, or concentrated sulfuric acid) to become sulfuric acid to be aerated. The sulfuric acid to be aerated can be diluted with ultrapure water to a desired concentration of sulfuric acid, usually 98% sulfuric acid, but not limited to this, and then enter the aeration process. Sulfuric acid may include impurities such as sulfur dioxide (SO 2 ), which must be removed through a staged aeration process in a staged aeration configuration to become high-purity sulfuric acid.

上述SO3氣體的來源並無限制,可透過將硫(通常為S8)在空氣中燃燒後,產生SO2氣體;或者,將硫酸廢液導入分解爐中加熱,產生SO2氣體;再以五氧化二釩(V2O5)為催化劑將SO2氣體轉換成SO3氣體而來。值得注意的是,可能只有部分或少部分SO2氣體轉換成SO3氣體,故SO3氣體會帶著SO2氣體進入吸收塔110,影響硫酸的純度。此外,SO3氣體會可經過一純化裝置160再自氣體輸入口進入吸收塔110。 The source of the above-mentioned SO 3 gas is not limited, and can be produced by burning sulfur (usually S 8 ) in air to generate SO 2 gas ; Vanadium pentoxide (V 2 O 5 ) is used as a catalyst to convert SO 2 gas into SO 3 gas. It is worth noting that only a part or a small part of SO 2 gas may be converted into SO 3 gas, so SO 3 gas will enter the absorption tower 110 with SO 2 gas, affecting the purity of sulfuric acid. In addition, SO 3 gas can pass through a purification device 160 and then enter the absorption tower 110 from the gas input port.

關於超純水的水質要求,代表性的標準為:25℃時的電阻率至少約為15Ω-cm,電解質濃度低於25ppb,微粒含量低於150/cm3且小於0.2微米,微生物含量低於10/cm3,且總有機碳低於100ppb,但不限於此。 Regarding the water quality requirements of ultrapure water, the representative standards are: the resistivity at 25°C is at least about 15Ω-cm, the electrolyte concentration is less than 25ppb, the particle content is less than 150/ cm3 and less than 0.2 microns, and the microbial content is less than 10/cm 3 , and the total organic carbon is less than 100 ppb, but not limited thereto.

分階段曝氣程序是以第一曝氣裝置120的第一壓縮乾燥空氣來去除待曝氣硫酸的雜質,形成第一次曝氣後硫酸,然後以第二曝氣裝置150的第二壓縮乾燥空氣來去除第一次曝氣後硫酸的雜質,形成高純度硫酸。上述(例如)98%的硫酸可再加以稀釋成(例如)96%的硫酸,但不限於此。高純度硫酸的純度將在下文中定義。第一壓縮乾燥空氣或第二壓縮乾燥空氣可為氮氣或乾淨空氣,已去除水分或其他不純物者,而不會與硫酸發生反應。 The step-by-step aeration process uses the first compressed drying air of the first aeration device 120 to remove impurities in the sulfuric acid to be aerated to form sulfuric acid after the first aeration, and then uses the second compressed dry air of the second aeration device 150 to dry Air is used to remove the impurities of sulfuric acid after the first aeration to form high-purity sulfuric acid. The above (for example) 98% sulfuric acid may be further diluted to (for example) 96% sulfuric acid, but not limited thereto. The purity of high-purity sulfuric acid will be defined below. The first compressed dry air or the second compressed dry air can be nitrogen or clean air, which have been removed from moisture or other impurities and will not react with sulfuric acid.

在本發明中,第一曝氣裝置120的第一曝氣溫度是設定成不同於第二曝氣裝置150的第二曝氣溫度。例如,第一曝氣溫度可高於第二曝氣溫度。例如,第一曝氣溫度可設定成70℃~100℃,而第二曝氣溫度可設定成45℃~75℃。 In the present invention, the first aeration temperature of the first aeration device 120 is set to be different from the second aeration temperature of the second aeration device 150 . For example, the first aeration temperature may be higher than the second aeration temperature. For example, the first aeration temperature may be set to 70°C to 100°C, and the second aeration temperature may be set to 45°C to 75°C.

第一曝氣裝置120的第一壓縮乾燥空氣流量可設定成不同於第二曝氣裝置150的第二壓縮乾燥空氣流量。第一壓縮乾燥空氣流量可為第二壓縮乾燥空氣流量的1倍~5倍。第一壓縮乾燥空氣流量可介於500LPM~1000LPM,而 第二壓縮乾燥空氣流量可介於500LPM~1000LPM。因此,第一壓縮乾燥空氣流量與第二壓縮乾燥空氣流量加總是介於1000LPM~2000LPM,明顯小於比較例的3000LPM,故可減少壓縮乾燥空氣的用量。 The first compressed drying air flow rate of the first aeration device 120 may be set to be different from the second compressed drying air flow rate of the second aeration device 150 . The flow rate of the first compressed drying air may be 1 to 5 times the flow rate of the second compressed drying air. The flow rate of the first compressed drying air can be between 500LPM and 1000LPM, and The flow rate of the second compressed drying air may be between 500LPM and 1000LPM. Therefore, the sum of the first compressed drying air flow and the second compressed drying air flow is between 1000 LPM and 2000 LPM, which is significantly smaller than the 3000 LPM of the comparative example, so the amount of compressed drying air can be reduced.

另一方面,第一曝氣裝置120的一部分硫酸經由循環構造而回到吸收塔110,作為吸收SO3氣體的溶劑,稱為「循環酸」。在循環構造的路徑中任何適合之處,可導入超純水將該部分硫酸濃度稀釋成(例如)96%,但不限於此。 On the other hand, a part of sulfuric acid in the first aerator 120 is returned to the absorption tower 110 through the circulation structure, and is called "circulating acid" as a solvent for absorbing SO 3 gas. At any suitable location in the path of the recycle configuration, ultrapure water may be introduced to dilute the portion of the sulfuric acid concentration to, for example, 96%, but not limited thereto.

可選地,高純度硫酸製程設備100更包括一薄膜蒸餾器(圖未示),以自吸收塔110產生高純度SO3氣體。高純度SO3氣體可再導入吸收塔110,由吸收塔110的溶劑所吸收,則硫酸可進一步純化,因而提升其純度。換言之,高純度SO3氣體比起氣體輸入口所輸入的SO3氣體,純度更高。 Optionally, the high-purity sulfuric acid process equipment 100 further includes a thin-film distiller (not shown) to generate high-purity SO 3 gas from the absorption tower 110 . The high-purity SO 3 gas can be re-introduced into the absorption tower 110 to be absorbed by the solvent of the absorption tower 110, and the sulfuric acid can be further purified, thereby improving its purity. In other words, the high-purity SO 3 gas has a higher purity than the SO 3 gas input from the gas input port.

此外,值得注意的是,在本實施例中,待曝氣硫酸成為高純度硫酸的過程並未經歷冷卻裝置,僅經歷分階段曝氣構造。 In addition, it is worth noting that in this embodiment, the process of the sulfuric acid to be aerated into high-purity sulfuric acid does not go through a cooling device, but only goes through a staged aeration structure.

經過分析,由本發明的高純度硫酸製程設備100所製備的高純度硫酸所含有的金屬或其離子濃度(即雜質含量)如下表1所示。 After analysis, the metal or its ion concentration (that is, the impurity content) contained in the high-purity sulfuric acid prepared by the high-purity sulfuric acid process equipment 100 of the present invention is shown in Table 1 below.

Figure 109116718-A0305-02-0010-2
Figure 109116718-A0305-02-0010-2
Figure 109116718-A0305-02-0011-4
Figure 109116718-A0305-02-0011-4

綜上所述,本發明透過分階段曝氣構造的設計,將第一曝氣裝置的第一曝氣溫度設定成不同於第二曝氣裝置的第二曝氣溫度,可減少壓縮乾燥空氣的用量。具體而言,在製備出相同純度的硫酸的前提下,本發明的高純度硫酸製程設備,因為有使用分階段曝氣構造,其所需的壓縮乾燥空氣用量是不使用分階段曝氣構造的硫酸製程設備所需的壓縮乾燥空氣用量的三分之二或更少,故可有效節省資源。此外,(SO2)含量小於0.5ppm,其他金屬離子含量則小於10ppt,故可製備高純度硫酸。 To sum up, through the design of the staged aeration structure in the present invention, the first aeration temperature of the first aeration device is set to be different from the second aeration temperature of the second aeration device, which can reduce the amount of compressed drying air. dosage. Specifically, under the premise of preparing sulfuric acid of the same purity, the high-purity sulfuric acid process equipment of the present invention uses a staged aeration structure, and the required amount of compressed drying air is not based on the staged aeration structure. Two-thirds or less of the compressed dry air required by the sulfuric acid process equipment, so it can effectively save resources. In addition, the content of (SO 2 ) is less than 0.5 ppm, and the content of other metal ions is less than 10 ppt, so high-purity sulfuric acid can be prepared.

儘管本發明已透過多個實施例來說明,應理解的是,只要不背離本發明的精神及申請專利範圍所主張者,可作出許多其他可能的修飾及變化。 Although this invention has been described in terms of several embodiments, it should be understood that many other possible modifications and changes can be made without departing from the spirit of the invention and the claimed scope of the invention.

100:高純度硫酸製程設備 100: High-purity sulfuric acid process equipment

110:吸收塔 110: Absorption tower

120:第一曝氣裝置 120: The first aeration device

130:第一冷卻裝置 130: First cooling device

150:第二曝氣裝置 150: Second aeration device

160:純化裝置 160: Purification device

Claims (8)

一種高純度硫酸製程設備(100),包括:一吸收塔(110),該吸收塔(110)具有溶劑;三氧化硫(SO3)氣體進入該吸收塔(110)而由該溶劑所吸收,成為待曝氣硫酸;一分階段曝氣構造;待曝氣硫酸經由該分階段曝氣構造的分階段曝氣程序而去除雜質,成為高純度硫酸;該分階段曝氣構造包括一第一曝氣裝置(120)與一第二曝氣裝置(150),該第一曝氣裝置(120)的第一曝氣溫度高於該第二曝氣裝置(150)的第二曝氣溫度;以及一循環構造,包括一分階段冷卻構造,該分階段冷卻構造設置在該第一曝氣裝置(120)與該吸收塔(110)之間。 A high-purity sulfuric acid process equipment (100), comprising: an absorption tower (110), the absorption tower (110) having a solvent; sulfur trioxide (SO 3 ) gas enters the absorption tower (110) and is absorbed by the solvent, It becomes sulfuric acid to be aerated; a staged aeration structure; the sulfuric acid to be aerated is removed from impurities through the staged aeration process of the staged aeration structure to become high-purity sulfuric acid; the staged aeration structure includes a first aeration an aeration device (120) and a second aeration device (150), the first aeration temperature of the first aeration device (120) is higher than the second aeration temperature of the second aeration device (150); and A circulation structure includes a staged cooling structure, which is provided between the first aeration device (120) and the absorption tower (110). 如請求項1所述的高純度硫酸製程設備(100),其中,該第一曝氣裝置(120)串聯在該吸收塔(110)與該第二曝氣裝置(150)之間。 The high-purity sulfuric acid process equipment (100) according to claim 1, wherein the first aeration device (120) is connected in series between the absorption tower (110) and the second aeration device (150). 如請求項1所述的高純度硫酸製程設備(100),其中,該第一曝氣裝置(120)的第一壓縮乾燥空氣流量不同於該第二曝氣裝置(150)的第二壓縮乾燥空氣流量。 The high-purity sulfuric acid process equipment (100) according to claim 1, wherein the first compressed drying air flow rate of the first aeration device (120) is different from the second compressed drying of the second aeration device (150) air flow. 如請求項3所述的高純度硫酸製程設備(100),其中,該第一壓縮乾燥空氣流量為該第二壓縮乾燥空氣流量的大於1倍~小於5倍。 The high-purity sulfuric acid process equipment (100) according to claim 3, wherein the flow rate of the first compressed drying air is greater than 1 time to less than 5 times the flow rate of the second compressed drying air. 如請求項1所述的高純度硫酸製程設備(100),其中,超純水進入該吸收塔(110)。 The high-purity sulfuric acid process equipment (100) according to claim 1, wherein ultrapure water enters the absorption tower (110). 如請求項1所述的高純度硫酸製程設備(100),其中,該溶劑為超純水、硫酸、或濃硫酸;該雜質包括二氧化硫(SO2)。 The high-purity sulfuric acid process equipment (100) according to claim 1, wherein the solvent is ultrapure water, sulfuric acid, or concentrated sulfuric acid; and the impurities include sulfur dioxide (SO 2 ). 一種高純度硫酸,是由請求項1的高純度硫酸製程設備(100) 所製備而成者,其濃度為95%至99%,其純度為SO2含量小於0.5ppm。 A high-purity sulfuric acid prepared by the high-purity sulfuric acid process equipment (100) of claim 1, the concentration of which is 95% to 99%, and the purity is that the content of SO 2 is less than 0.5 ppm. 如請求項7所述的高純度硫酸,其純度為鐵(Fe)、鈣(Ca)、鋁(Al)、鉻(Cr)、鎳(Ni)、錳(Mn)、鉬(Mo)、鎂(Mg)、鉀(K)、納(Na)、或鋅(Zn)、或其離子含量小於10ppt。 The high-purity sulfuric acid according to claim 7, whose purity is iron (Fe), calcium (Ca), aluminum (Al), chromium (Cr), nickel (Ni), manganese (Mn), molybdenum (Mo), magnesium (Mg), potassium (K), sodium (Na), or zinc (Zn), or the ion content thereof is less than 10 ppt.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW555689B (en) * 1999-12-28 2003-10-01 Merck Patent Gmbh Production of high purity sulfuric acid
CN101891161A (en) * 2010-06-29 2010-11-24 上海华谊微电子材料有限公司 Preparation method of ultra-pure sulfuric acid
CN105366651A (en) * 2014-08-31 2016-03-02 天津渤大硫酸工业有限公司 Sulfur dioxide removing system for refined sulfuric acid

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW555689B (en) * 1999-12-28 2003-10-01 Merck Patent Gmbh Production of high purity sulfuric acid
CN101891161A (en) * 2010-06-29 2010-11-24 上海华谊微电子材料有限公司 Preparation method of ultra-pure sulfuric acid
CN105366651A (en) * 2014-08-31 2016-03-02 天津渤大硫酸工业有限公司 Sulfur dioxide removing system for refined sulfuric acid

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