TWI770828B - Amplification circuit - Google Patents

Amplification circuit Download PDF

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TWI770828B
TWI770828B TW110105878A TW110105878A TWI770828B TW I770828 B TWI770828 B TW I770828B TW 110105878 A TW110105878 A TW 110105878A TW 110105878 A TW110105878 A TW 110105878A TW I770828 B TWI770828 B TW I770828B
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terminal
amplifier
coupled
control
circuit
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TW110105878A
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TW202215775A (en
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陳智聖
彭天雲
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立積電子股份有限公司
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Abstract

An amplification circuit includes a switch circuit, an amplifier, and a control circuit. The switch circuit has a first terminal coupled to a system voltage terminal, a second terminal coupled to an input terminal of the amplifier, and a control terminal configured to receive a first control signal or a second control signal related to the first control signal. The amplifier amplifies a radio frequency signal. The control circuit generates a control signal according to a driving current generated by the amplifier. When the amplifier operates in a first high power mode, the control circuit controls the first control signal according to the magnitude of the driving current to adjust a conducting level between the first terminal and the second terminal of the switch circuit. When the amplifier operates in a low power mode, the control circuit controls the first control signal to turn off the switch circuit. When the amplifier operates in a second high power mode, the control circuit controls the first control signal to turn on the switch circuit.

Description

放大電路amplifying circuit

本發明是有關於一種放大電路，特別是一種具有高功率保護功能的放大電路。The present invention relates to an amplifying circuit, especially an amplifying circuit with high power protection function.

在無線通信中，由於操作環境的條件可能會隨時隨地改變，因此為了確保訊號傳輸的品質，常會透過放大器來將傳輸訊號放大，以改善無線通信中訊號傳輸和訊號接收的品質。然而當輸入訊號的功率較大時，放大器中的電晶體就可能會被迫操作在較高的偏壓，並產生較大的驅動電流。此時，過高的偏壓及過大的驅動電流都可能會導致電晶體損壞，使得放大器無法正常運作。In wireless communication, since the operating environment conditions may change anytime and anywhere, in order to ensure the quality of signal transmission, amplifiers are often used to amplify the transmission signal to improve the quality of signal transmission and signal reception in wireless communication. However, when the power of the input signal is large, the transistor in the amplifier may be forced to operate at a higher bias voltage and generate a larger drive current. At this time, excessive bias voltage and excessive driving current may cause damage to the transistor, making the amplifier unable to operate normally.

在先前技術中，常會在放大器的輸入端設置二極體來箝制輸入訊號的電位，然而二極體的特性卻會導致放大器的線性度降低，使得放大器的性能表現不如預期。In the prior art, a diode is often set at the input end of the amplifier to clamp the potential of the input signal. However, the characteristic of the diode will reduce the linearity of the amplifier, making the performance of the amplifier not as expected.

本發明是有關於一種放大電路，放大電路包含開關電路、放大器及控制電路。The present invention relates to an amplifier circuit, which includes a switch circuit, an amplifier and a control circuit.

開關電路具有第一端、第二端及控制端，開關電路的第一端耦接於系統電壓端，而開關電路的控制端接收第一控制訊號或與第一控制訊號相關的一第二控制訊號。放大器具有輸入端及輸出端，放大器的輸入端耦接於開關電路之第二端，用以輸入射頻訊號，放大器的輸出端輸出放大後射頻訊號。控制電路耦接於放大器，控制電路根據放大器所導通之驅動電流產生第一控制訊號。The switch circuit has a first terminal, a second terminal and a control terminal, the first terminal of the switch circuit is coupled to the system voltage terminal, and the control terminal of the switch circuit receives the first control signal or a second control signal related to the first control signal signal. The amplifier has an input end and an output end. The input end of the amplifier is coupled to the second end of the switch circuit for inputting a radio frequency signal, and the output end of the amplifier outputs the amplified radio frequency signal. The control circuit is coupled to the amplifier, and the control circuit generates a first control signal according to the driving current turned on by the amplifier.

當控制電路判斷放大器是操作在第一高功率狀態時，控制電路根據驅動電流的大小控制第一控制訊號以調節開關電路的第一端與第二端之間的導通程度。當控制電路判斷放大器是操作在低功率狀態時，控制電路控制第一控制訊號以將開關電路截止。當控制電路判斷放大器是操作在第二高功率狀態時，控制電路控制第一控制訊號以將開關電路導通。When the control circuit determines that the amplifier is operating in the first high power state, the control circuit controls the first control signal according to the magnitude of the driving current to adjust the degree of conduction between the first end and the second end of the switch circuit. When the control circuit determines that the amplifier is operating in a low power state, the control circuit controls the first control signal to turn off the switch circuit. When the control circuit determines that the amplifier is operating in the second high power state, the control circuit controls the first control signal to turn on the switch circuit.

第1圖是本發明一實施例之放大電路100的示意圖。放大電路100包含開關電路110、放大器120及控制電路130。FIG. 1 is a schematic diagram of an amplifier circuit 100 according to an embodiment of the present invention. The amplifier circuit 100 includes a switch circuit 110 , an amplifier 120 and a control circuit 130 .

開關電路110具有第一端、第二端及控制端，開關電路110的第一端可耦接於射頻訊號輸入端IN，而開關電路110的控制端可接收第一控制訊號SIGctrl1。The switch circuit 110 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 110 can be coupled to the RF signal input terminal IN, and the control terminal of the switch circuit 110 can receive the first control signal SIGctrl1.

放大器120具有輸入端及輸出端，放大器120的輸入端可耦接於開關電路110之第二端，並可接收射頻訊號SIG RF1，而放大器120的輸出端OUT則可輸出放大後的射頻訊號SIG RF2。 The amplifier 120 has an input terminal and an output terminal. The input terminal of the amplifier 120 can be coupled to the second terminal of the switch circuit 110 and can receive the radio frequency signal SIG RF1 , and the output terminal OUT of the amplifier 120 can output the amplified radio frequency signal SIG RF2 .

控制電路130可耦接於放大器120，控制電路130可根據放大器120所導通之驅動電流Id產生第一控制訊號SIGctrl1，其中驅動電流Id的大小與射頻訊號SIG RF1的功率有關。舉例來說，當射頻訊號SIG RF1的功率越大時，放大器120所導通的驅動電流Id也會越大。 The control circuit 130 can be coupled to the amplifier 120, and the control circuit 130 can generate the first control signal SIGctrl1 according to the driving current Id turned on by the amplifier 120, wherein the driving current Id is related to the power of the radio frequency signal SIG RF1 . For example, when the power of the radio frequency signal SIG RF1 is larger, the driving current Id conducted by the amplifier 120 is also larger.

在有些實施例中，當控制電路130判斷放大器120是操作在低功率狀態時，表示射頻訊號SIG RF1的功率並未大到足以造成放大器120的損壞，此時控制電路130可控制第一控制訊號SIGctrl1以將開關電路110導通。 In some embodiments, when the control circuit 130 determines that the amplifier 120 is operating in a low power state, it means that the power of the radio frequency signal SIG RF1 is not large enough to cause damage to the amplifier 120 , and the control circuit 130 can control the first control signal at this time SIGctrl1 to turn on the switch circuit 110 .

然而，當控制電路130判斷放大器120是操作在第一高功率狀態時，表示射頻訊號SIG RF1的功率較大，而有可能足以造成放大器120的損壞，此時控制電路130可根據驅動電流Id的大小控制第一控制訊號SIGctrl1以調節開關電路110的第一端與第二端之間的導通程度。也就是說，在第一高功率狀態時，開關電路110的導通程度會隨著驅動電流Id的大小而改變。舉例來說，當驅動電流Id較大時，表示射頻訊號SIG RF1的功率較大，此時控制電路130可降低開關電路110的第一端與第二端之間的導通程度，以降低放大器130所接收到之射頻訊號SIG RF1的功率。如此一來，在射頻訊號SIG RF1的功率較大時，就可以避免放大器120的輸入端電壓被過度提升，而導致內部電晶體損壞。 However, when the control circuit 130 determines that the amplifier 120 is operating in the first high-power state, it means that the power of the radio frequency signal SIG RF1 is relatively high, which may be enough to cause damage to the amplifier 120 . The magnitude controls the first control signal SIGctrl1 to adjust the degree of conduction between the first end and the second end of the switch circuit 110 . That is to say, in the first high power state, the degree of conduction of the switch circuit 110 will vary with the magnitude of the driving current Id. For example, when the driving current Id is relatively large, it means that the power of the radio frequency signal SIG RF1 is relatively large. At this time, the control circuit 130 can reduce the degree of conduction between the first end and the second end of the switch circuit 110 to reduce the power of the amplifier 130 The power of the received RF signal SIG RF1 . In this way, when the power of the radio frequency signal SIG RF1 is relatively large, the voltage of the input terminal of the amplifier 120 can be prevented from being excessively increased, resulting in damage to the internal transistor.

此外，當控制電路130判斷放大器120是操作在第二高功率狀態時，亦即當射頻訊號SIG RF1的功率過高時，控制電路130便可控制第一控制訊號SIGctrl1以將開關電路110截止，避免放大器120受到損壞。 In addition, when the control circuit 130 determines that the amplifier 120 is operating in the second high power state, that is, when the power of the radio frequency signal SIG RF1 is too high, the control circuit 130 can control the first control signal SIGctrl1 to turn off the switch circuit 110. Avoid damage to amplifier 120.

在第1圖中，控制電路130可包含比較器134。控制電路130亦可包含電流源132及/或參考壓降電阻DR1。比較器134具有第一輸入端、第二輸入端及輸出端，比較器134的第一輸入端可耦接於偵測節點DN1，比較器134的第二輸入端可耦接於參考節點RN1以接收參考電壓Vref。偵測節點DN1可設置於放大器120內。參考壓降電阻DR1具有第一端及第二端，參考壓降電阻DR1的第一端可耦接於系統電壓端VDD，而參考壓降電阻DR1的第二端可耦接於參考節點RN1以根據參考電流Iref1產生參考電壓Vref。電流源132可耦接於參考壓降電阻DR1的第二端，並且可以提供參考電流Iref1以使參考壓降電阻DR1產生電壓差。In FIG. 1 , the control circuit 130 may include a comparator 134 . The control circuit 130 may also include a current source 132 and/or a reference voltage drop resistor DR1. The comparator 134 has a first input terminal, a second input terminal and an output terminal. The first input terminal of the comparator 134 can be coupled to the detection node DN1, and the second input terminal of the comparator 134 can be coupled to the reference node RN1 to The reference voltage Vref is received. The detection node DN1 may be disposed in the amplifier 120 . The reference voltage drop resistor DR1 has a first end and a second end, the first end of the reference voltage drop resistor DR1 can be coupled to the system voltage terminal VDD, and the second end of the reference voltage drop resistor DR1 can be coupled to the reference node RN1 to The reference voltage Vref is generated according to the reference current Iref1. The current source 132 can be coupled to the second end of the reference voltage drop resistor DR1, and can provide the reference current Iref1 to generate a voltage difference between the reference voltage drop resistor DR1.

比較器134可以根據第一輸入端的電壓與第二輸入端的電壓輸出第一控制訊號SIGctrl1。在有些實施例中，偵測節點DN1的電壓會與驅動電流Id有關，因此若將參考節點RN1設定在適當的電壓值，就可以透過比較偵測節點DN1及參考節點RN1的電壓而得知驅動電流Id的變化，進而輸出對應的第一控制訊號SIGctrl1。The comparator 134 can output the first control signal SIGctrl1 according to the voltage of the first input terminal and the voltage of the second input terminal. In some embodiments, the voltage of the detection node DN1 is related to the driving current Id. Therefore, if the reference node RN1 is set to an appropriate voltage value, the driving current can be obtained by comparing the voltages of the detection node DN1 and the reference node RN1 The change of the current Id further outputs the corresponding first control signal SIGctrl1.

在第1圖中，放大器120可包含電阻R1及電晶體M1。放大器120亦可包含電感L1。電阻R1具有第一端及第二端，電阻R1的第一端可耦接於系統電壓端VDD，而電阻R1的第二端可耦接於偵測節點DN1。電晶體M1具有第一端、第二端及控制端，電晶體M1的第一端可耦接於偵測節點DN1，而電晶體M1的控制端可耦接於放大器120的輸入端。電感L1具有第一端及第二端，電感L1的第一端可耦接於電晶體M1的第二端，而電感L1的第二端可耦接於系統電壓端VSS。在此情況下，電晶體M1的控制端會接收到射頻訊號SIG RF1，而當射頻訊號SIG RF1的功率較大時，電晶體M1將會導通較大的電流，此時電阻R1會產生較大的壓降，使得偵測節點DN1的電壓下降。 In FIG. 1, the amplifier 120 may include a resistor R1 and a transistor M1. The amplifier 120 may also include an inductor L1. The resistor R1 has a first terminal and a second terminal, the first terminal of the resistor R1 can be coupled to the system voltage terminal VDD, and the second terminal of the resistor R1 can be coupled to the detection node DN1. The transistor M1 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M1 can be coupled to the detection node DN1 , and the control terminal of the transistor M1 can be coupled to the input terminal of the amplifier 120 . The inductor L1 has a first terminal and a second terminal, the first terminal of the inductor L1 can be coupled to the second terminal of the transistor M1, and the second terminal of the inductor L1 can be coupled to the system voltage terminal VSS. In this case, the control terminal of the transistor M1 will receive the radio frequency signal SIG RF1 , and when the power of the radio frequency signal SIG RF1 is large, the transistor M1 will conduct a large current, and the resistance R1 will generate a large current , so that the voltage of the detection node DN1 drops.

此外，在有些實施例中，放大器120還可包含電感L2，電感L2可耦接於電阻R1與電晶體M1之間。設置於放大器120的電感L1及/或L2可減少射頻訊號SIG RF1於放大時不期望的洩漏，以維持放大器120的線性度。 In addition, in some embodiments, the amplifier 120 may further include an inductor L2, and the inductor L2 may be coupled between the resistor R1 and the transistor M1. The inductors L1 and/or L2 disposed in the amplifier 120 can reduce undesired leakage of the RF signal SIG RF1 during amplification, so as to maintain the linearity of the amplifier 120 .

在放大電路100中，開關電路110可包含電晶體M17及M18。電晶體M17具有第一端、第二端及控制端，電晶體M17的第一端可耦接於開關電路110的第一端，而電晶體M17的控制端可耦接至開關電路110的控制端。電晶體M18具有第一端、第二端及控制端，電晶體M18的第一端可耦接於電晶體M17的第二端，而電晶體M18的控制端可耦接至開關電路110的控制端。In the amplifier circuit 100, the switch circuit 110 may include transistors M17 and M18. The transistor M17 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M17 can be coupled to the first terminal of the switch circuit 110 , and the control terminal of the transistor M17 can be coupled to the control terminal of the switch circuit 110 . end. The transistor M18 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M18 can be coupled to the second terminal of the transistor M17, and the control terminal of the transistor M18 can be coupled to the control terminal of the switch circuit 110. end.

第2圖是本發明一實施例之放大電路100在不同功率狀態下的節點電壓及控制訊號波形的示意圖。在此實施例中，電晶體M17及M18可以是N型的電晶體。在此情況下，參考節點RN1的電壓可以設定成略小於偵測節點DN1在射頻訊號SIG RF1為低功率時的電壓，因此在時段T1中，當放大電路100操作在低功率狀態時，比較器134將會輸出高電位的第一控制訊號SIGctrl1以將開關電路110中的電晶體M17及M18導通。而在時段T2中，當放大電路100操作在第一高功率狀態時，偵測節點DN1會略為下降，此時比較器134所輸出的第一控制訊號SIGctrl1會在低電位及高電位之間動態地調整，因此可以動態地調整電晶體M17及M18的導通程度，使得偵測節點DN1及參考節點RN1的電壓能夠趨於相近。舉例來說，在第一高功率狀態時，若射頻訊號SIG RF1由小至大變化，則開關電路110則會被由大至小地導通。然而，在時段T3中，當放大電路100操作在第二高功率狀態時，亦即當射頻訊號SIG RF1的功率比在第一高功率狀態下更高時，偵測節點DN1會明顯下降，此時控制電路130已經無法有效地將偵測節點DN1及參考節點RN1的電壓調節至相近的範圍，因此比較器134會輸出低電位的第一控制訊號SIGctrl1，以將開關電路110中的電晶體M17及M18截止。 FIG. 2 is a schematic diagram of node voltages and control signal waveforms of the amplifying circuit 100 in different power states according to an embodiment of the present invention. In this embodiment, the transistors M17 and M18 may be N-type transistors. In this case, the voltage of the reference node RN1 can be set to be slightly lower than the voltage of the detection node DN1 when the radio frequency signal SIG RF1 is low power. Therefore, in the period T1, when the amplifier circuit 100 operates in the low power state, the comparator 134 will output a high-level first control signal SIGctrl1 to turn on the transistors M17 and M18 in the switch circuit 110 . In the period T2, when the amplifying circuit 100 operates in the first high power state, the detection node DN1 will drop slightly, and the first control signal SIGctrl1 output by the comparator 134 will dynamically change between the low level and the high level at this time. Therefore, the conduction degree of the transistors M17 and M18 can be adjusted dynamically, so that the voltages of the detection node DN1 and the reference node RN1 can be close to each other. For example, in the first high power state, if the radio frequency signal SIG RF1 changes from small to large, the switch circuit 110 will be turned on from large to small. However, in the period T3, when the amplifying circuit 100 operates in the second high power state, that is, when the power of the radio frequency signal SIG RF1 is higher than that in the first high power state, the detection node DN1 will drop significantly. When the control circuit 130 has been unable to effectively adjust the voltages of the detection node DN1 and the reference node RN1 to a similar range, the comparator 134 will output the first control signal SIGctrl1 with a low level to switch the transistor M17 in the switch circuit 110 and M18 deadline.

在有些實施例中，開關電路110還可包含電阻R4及R5。電阻R4具有第一端及第二端，電阻R4的第一端可耦接於電晶體M17的第一端，而電阻R4的第二端可耦接於電晶體M17的第二端。電阻R5具有第一端及第二端，電阻R5的第一端可耦接於電晶體M18的第一端，而電阻R5的第二端可耦接於電晶體M18的第二端。電阻R4及R5可以分別用來平衡電晶體M17及M18的汲極-源極電壓。In some embodiments, the switch circuit 110 may also include resistors R4 and R5. The resistor R4 has a first end and a second end, the first end of the resistor R4 can be coupled to the first end of the transistor M17, and the second end of the resistor R4 can be coupled to the second end of the transistor M17. The resistor R5 has a first end and a second end, the first end of the resistor R5 can be coupled to the first end of the transistor M18, and the second end of the resistor R5 can be coupled to the second end of the transistor M18. Resistors R4 and R5 can be used to balance the drain-source voltages of transistors M17 and M18, respectively.

此外，在第1圖的實施例中，放大電路100還可包含開關電路140。開關電路140具有第一端、第二端及控制端，開關電路140的第一端可耦接於開關電路110的第二端，開關電路140的第二端可耦接於系統電壓端VSS，而開關電路140的控制端可接收第一控制訊號SIGctrl1。開關電路140可以在高功率狀態下，提供射頻訊號SIG RF1的分流(shunt)路徑，因此可以進一步保護放大器120。 In addition, in the embodiment of FIG. 1 , the amplifying circuit 100 may further include a switch circuit 140 . The switch circuit 140 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 140 can be coupled to the second terminal of the switch circuit 110, and the second terminal of the switch circuit 140 can be coupled to the system voltage terminal VSS. The control end of the switch circuit 140 can receive the first control signal SIGctrl1. The switch circuit 140 can provide a shunt path for the radio frequency signal SIG RF1 in a high power state, thereby further protecting the amplifier 120 .

舉例來說，當控制電路130判斷放大器120是操作在低功率狀態時，控制電路130可以控制開關電路140截止。當控制電路130判斷放大器120是操作在第一高功率狀態時，控制電路130也可根據驅動電流Id的大小調節開關電路140的第一端與第二端之間的導通程度，且此導通程度的變化趨勢可與開關電路110的第一端與第二端之間的導通程度的變化趨勢相反。也就是說，在第一高功率狀態時，開關電路140可能會被有限度地導通，以避免高功率的射頻訊號SIG RF1造成放大器120的損壞。舉例來說，在第一高功率狀態時，若射頻訊號SIG RF1由小至大變化，則開關電路140則會被由小至大地導通。此外，當控制電路130判斷放大器120是操作在第二高功率狀態時，控制電路130可控制開關電路140導通。在此情況下，即便有射頻訊號SIG RF1能夠通過開關電路110，也會經由開關電路140所提供的分流路徑而流入系統電壓端VSS，以免對放大器120造成損壞。 For example, when the control circuit 130 determines that the amplifier 120 is operating in a low power state, the control circuit 130 may control the switch circuit 140 to be turned off. When the control circuit 130 determines that the amplifier 120 is operating in the first high power state, the control circuit 130 can also adjust the degree of conduction between the first end and the second end of the switch circuit 140 according to the magnitude of the driving current Id, and the degree of conduction The change trend of , may be opposite to the change trend of the conduction degree between the first end and the second end of the switch circuit 110 . That is, in the first high-power state, the switch circuit 140 may be turned on to a limited extent to avoid damage to the amplifier 120 caused by the high-power radio frequency signal SIG RF1 . For example, in the first high power state, if the radio frequency signal SIG RF1 changes from small to large, the switch circuit 140 will be turned on from small to ground. In addition, when the control circuit 130 determines that the amplifier 120 is operating in the second high power state, the control circuit 130 may control the switch circuit 140 to be turned on. In this case, even if the radio frequency signal SIG RF1 can pass through the switch circuit 110 , it will flow into the system voltage terminal VSS through the shunt path provided by the switch circuit 140 to avoid damage to the amplifier 120 .

在第1圖中，開關電路140可包含電晶體M19及M20。電晶體M19具有第一端及第二端，電晶體M19的第一端可耦接於開關電路140的第一端，而電晶體M19的控制端可耦接至開關電路140的控制端。電晶體M20具有第一端及第二端，電晶體M20的第一端可耦接於電晶體M19的第二端，而電晶體M20的控制端可耦接至開關電路140的控制端。In FIG. 1, the switch circuit 140 may include transistors M19 and M20. The transistor M19 has a first terminal and a second terminal. The first terminal of the transistor M19 can be coupled to the first terminal of the switch circuit 140 , and the control terminal of the transistor M19 can be coupled to the control terminal of the switch circuit 140 . The transistor M20 has a first end and a second end, the first end of the transistor M20 can be coupled to the second end of the transistor M19 , and the control end of the transistor M20 can be coupled to the control end of the switch circuit 140 .

此外，在有些實施例中，開關電路140還可包含反相器142。反相器142具有輸入端及輸入端，反相器142的輸入端可接收第一控制訊號SIGctrl1，而反相器142的輸出端可以輸出第二控制訊號SIGctrl2。也就是說，開關電路110及開關電路140的控制訊號可以是反相的。雖然在第1圖的實施例中，開關電路140可以包含反相器142，並利用反相器142產生第二控制訊號SIGctrl2，然而本發明並不以此為限。在有些其他實施例中，控制電路130中可另外包含能夠產生第二控制訊號SIGctrl2的電路，在此情況下，開關電路140也可不包含反相器142，而直接接收與第一控制訊號SIGctrl1有關的第二控制訊號SIGctrl2。在第1圖的實施例中，開關電路140可包含反相器142且電晶體M19及M20可為N通道場效電晶體(n-channel FET)。而在有些其他實施例中，開關電路140可省略反相器142且電晶體M19及M20可為P通道場效電晶體(p-channel FET)，使電晶體M19及M20的控制端直接接收第一控制訊號SIGctrl1。Additionally, in some embodiments, the switch circuit 140 may further include an inverter 142 . The inverter 142 has an input terminal and an input terminal. The input terminal of the inverter 142 can receive the first control signal SIGctrl1, and the output terminal of the inverter 142 can output the second control signal SIGctrl2. That is to say, the control signals of the switch circuit 110 and the switch circuit 140 may be inverted. Although in the embodiment of FIG. 1, the switch circuit 140 may include an inverter 142 and use the inverter 142 to generate the second control signal SIGctrl2, but the present invention is not limited thereto. In some other embodiments, the control circuit 130 may additionally include a circuit capable of generating the second control signal SIGctrl2. In this case, the switch circuit 140 may not include the inverter 142, and directly receives the first control signal SIGctrl1. the second control signal SIGctrl2. In the embodiment of FIG. 1, the switch circuit 140 may include an inverter 142 and the transistors M19 and M20 may be N-channel field effect transistors (n-channel FETs). In some other embodiments, the switch circuit 140 may omit the inverter 142 and the transistors M19 and M20 may be p-channel field effect transistors (p-channel FETs), so that the control terminals of the transistors M19 and M20 directly receive the first A control signal SIGctrl1.

再者，開關電路140還可包含電阻R6及R7。電阻R6具有第一端及第二端，電阻R6的第一端可耦接於電晶體M19的第一端，而電阻R6的第二端可耦接於電晶體M19的第二端。電阻R7具有第一端及第二端，電阻R7的第一端可耦接於電晶體M20的第一端，而電阻R7的第二端可耦接於電晶體M20的第二端。電阻R6及R7可以分別用來平衡電晶體M19及M20的汲極-源極電壓。Furthermore, the switch circuit 140 may further include resistors R6 and R7. The resistor R6 has a first end and a second end, the first end of the resistor R6 can be coupled to the first end of the transistor M19, and the second end of the resistor R6 can be coupled to the second end of the transistor M19. The resistor R7 has a first end and a second end, the first end of the resistor R7 can be coupled to the first end of the transistor M20, and the second end of the resistor R7 can be coupled to the second end of the transistor M20. Resistors R6 and R7 can be used to balance the drain-source voltages of transistors M19 and M20, respectively.

在第1圖的實施例中，放大電路100可以利用開關電路110及140來對放大器120進行保護，然而本發明並不以此為限，在本發明的有些實施例中，放大電路100也可以省略開關電路140而僅利用開關電路110來保護放大器120，或省略開關電路110而僅利用開關電路140來對放大器120進行保護。 在其他實施例中，開關電路110或開關電路140也可只包括一個電晶體，例如開關電路110只包括一個電晶體M17或M18，開關電路140只包括一個電晶體M19或M20。In the embodiment of FIG. 1, the amplifier circuit 100 can use the switch circuits 110 and 140 to protect the amplifier 120, but the present invention is not limited to this. In some embodiments of the present invention, the amplifier circuit 100 can also The switch circuit 140 is omitted and only the switch circuit 110 is used to protect the amplifier 120 , or the switch circuit 110 is omitted and only the switch circuit 140 is used to protect the amplifier 120 . In other embodiments, the switch circuit 110 or the switch circuit 140 may also include only one transistor, for example, the switch circuit 110 includes only one transistor M17 or M18, and the switch circuit 140 only includes one transistor M19 or M20.

此外，在有些實施例中，放大電路100中的放大器100也可能根據系統的需求而包含其他的元件，此時為使參考節點RN1可以提供對應參考電壓，控制電路130也可能須隨之調整。第3圖是本發明一實施例之放大電路200的示意圖。放大電路200與放大電路100具有相似的結構並可根據相似原理操作。在第3圖中，放大器220可包含電阻R2、電晶體M2及電晶體M3。放大器220亦可包含電感L3及電感L4。In addition, in some embodiments, the amplifier 100 in the amplifier circuit 100 may also include other components according to the requirements of the system. In this case, in order to enable the reference node RN1 to provide a corresponding reference voltage, the control circuit 130 may also need to be adjusted accordingly. FIG. 3 is a schematic diagram of an amplifier circuit 200 according to an embodiment of the present invention. The amplifier circuit 200 has a similar structure as the amplifier circuit 100 and operates according to similar principles. In FIG. 3, the amplifier 220 may include a resistor R2, a transistor M2, and a transistor M3. Amplifier 220 may also include inductor L3 and inductor L4.

電阻R2具有第一端及第二端，電阻R2的第一端可耦接於系統電壓端VDD，而電阻R2的第二端可耦接於偵測節點DN1。電感L3具有第一端及第二端，電感L3的第一端可耦接於電阻R2的第二端。電晶體M2具有第一端、第二端及控制端，電晶體M2的第一端可耦接於電感L3的第二端及放大器220的輸出端，而電晶體M2的控制端可耦接於偏壓端Vbias。電晶體M3具有第一端、第二端及控制端，電晶體M3的第一端可耦接於電晶體M2的第二端，而電晶體M3的控制端可耦接於放大器220的輸入端。電感L4具有第一端及第二端，電感L4的第一端可耦接於電晶體M3的第二端，而電感L4的第二端可耦接於系統電壓端VSS。The resistor R2 has a first terminal and a second terminal, the first terminal of the resistor R2 can be coupled to the system voltage terminal VDD, and the second terminal of the resistor R2 can be coupled to the detection node DN1. The inductor L3 has a first terminal and a second terminal, and the first terminal of the inductor L3 can be coupled to the second terminal of the resistor R2. The transistor M2 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M2 can be coupled to the second terminal of the inductor L3 and the output terminal of the amplifier 220, and the control terminal of the transistor M2 can be coupled to the output terminal of the amplifier 220. Bias terminal Vbias. The transistor M3 has a first end, a second end and a control end, the first end of the transistor M3 can be coupled to the second end of the transistor M2, and the control end of the transistor M3 can be coupled to the input end of the amplifier 220 . The inductor L4 has a first terminal and a second terminal, the first terminal of the inductor L4 can be coupled to the second terminal of the transistor M3, and the second terminal of the inductor L4 can be coupled to the system voltage terminal VSS.

此外，控制電路230可包含參考壓降電阻DR1、電晶體M4及比較器234。控制電路230亦可包含電流源232。電晶體M4具有第一端、第二端及控制端，電晶體M4的第一端可耦接於參考壓降電阻DR1的第二端，電晶體M4的第二端可耦接於電流源232，而電晶體M4的控制端可耦接於偏壓端Vbias。如此一來，控制電路230就可以在參考節點RN1上提供與放大器220之偵測節點DN1相對應的電壓。In addition, the control circuit 230 may include a reference voltage drop resistor DR1 , a transistor M4 and a comparator 234 . The control circuit 230 may also include a current source 232 . The transistor M4 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M4 can be coupled to the second terminal of the reference voltage drop resistor DR1, and the second terminal of the transistor M4 can be coupled to the current source 232 , and the control terminal of the transistor M4 can be coupled to the bias terminal Vbias. In this way, the control circuit 230 can provide a voltage corresponding to the detection node DN1 of the amplifier 220 on the reference node RN1.

再者，在第3圖中，放大電路200還可包含開關電路250及260。開關電路250與開關電路210可具有相似的結構並可根據相同的原理操作。開關電路210具有第一端、第二端及控制端，開關電路210的第一端可耦接於射頻訊號輸入端IN，開關電路210的控制端可接收第一控制訊號SIGctrl1。開關電路250具有第一端、第二端及控制端，開關電路250的第一端可耦接於開關電路210的第二端，開關電路250的第二端可耦接於放大器220的輸入端，而開關電路250的控制端可接收與第一控制訊號SIGctrl1有關的第三控制訊號SIGctrl3。例如，第一控制訊號SIGctrl1可相同於第三控制訊號SIGctrl3。Furthermore, in FIG. 3 , the amplifier circuit 200 may further include switch circuits 250 and 260 . Switch circuit 250 and switch circuit 210 may have similar structures and may operate according to the same principles. The switch circuit 210 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 210 can be coupled to the RF signal input terminal IN, and the control terminal of the switch circuit 210 can receive the first control signal SIGctrl1. The switch circuit 250 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 250 can be coupled to the second terminal of the switch circuit 210 , and the second terminal of the switch circuit 250 can be coupled to the input terminal of the amplifier 220 . , and the control end of the switch circuit 250 can receive the third control signal SIGctrl3 related to the first control signal SIGctrl1. For example, the first control signal SIGctrl1 may be the same as the third control signal SIGctrl3.

開關電路240具有第一端、第二端及控制端，開關電路240的第一端可耦接於開關電路210的第二端，開關電路240的第二端可耦接於系統電壓端VSS，而開關電路240的控制端可接收與第一控制訊號SIGctrl1有關的第二控制訊號SIGctrl2。開關電路260具有第一端、第二端及控制端，開關電路260的第一端可耦接於開關電路250的第二端，開關電路260的第二端可耦接於系統電壓端VSS，而開關電路260的控制端可接收與第一控制訊號SIGctrl1有關的第四控制訊號SIGctrl4。The switch circuit 240 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 240 can be coupled to the second terminal of the switch circuit 210, and the second terminal of the switch circuit 240 can be coupled to the system voltage terminal VSS. The control end of the switch circuit 240 can receive the second control signal SIGctrl2 related to the first control signal SIGctrl1. The switch circuit 260 has a first terminal, a second terminal and a control terminal. The first terminal of the switch circuit 260 can be coupled to the second terminal of the switch circuit 250, and the second terminal of the switch circuit 260 can be coupled to the system voltage terminal VSS. The control end of the switch circuit 260 can receive the fourth control signal SIGctrl4 related to the first control signal SIGctrl1.

在第3圖中，控制電路230可以產生第一控制訊號SIGctrl1並可利用反相器238A產生與第一控制訊號SIGctrl1反相的第二控制訊號SIGctrl2，及利用反相器238B產生與第一控制訊號SIGctrl1反相的第四控制訊號SIGctrl4。因此開關電路210及250可以同步操作，而開關電路240及260亦可同步操作。也就是說，當控制電路230判斷放大器220是操作在低功率狀態時，控制電路230可導通開關電路210及250並截止開關電路240及260。當控制電路230判斷放大器220是操作在第一高功率狀態時，控制電路230可根據驅動電流Id的大小調節開關電路210、240、250及260的導通程度。開關電路210及250可具有相同的導通程度變化趨勢，開關電路240及260可具有相同的導通程度變化趨勢，且開關電路210及240可具有相反的導通程度變化趨勢。當控制電路230判斷放大器220是操作在第二高功率狀態時，控制電路230會截止開關電路210及250並導通開關電路240及260。In FIG. 3, the control circuit 230 can generate the first control signal SIGctrl1 and can use the inverter 238A to generate the second control signal SIGctrl2 which is inverse to the first control signal SIGctrl1, and use the inverter 238B to generate the second control signal SIGctrl2 which is inverse with the first control signal SIGctrl1. The fourth control signal SIGctrl4 is inverted from the signal SIGctrl1. Therefore, the switch circuits 210 and 250 can operate synchronously, and the switch circuits 240 and 260 can also operate synchronously. That is, when the control circuit 230 determines that the amplifier 220 is operating in a low power state, the control circuit 230 can turn on the switch circuits 210 and 250 and turn off the switch circuits 240 and 260 . When the control circuit 230 determines that the amplifier 220 is operating in the first high power state, the control circuit 230 can adjust the degree of conduction of the switch circuits 210 , 240 , 250 and 260 according to the magnitude of the driving current Id. The switch circuits 210 and 250 may have the same change trend of the degree of conduction, the switch circuits 240 and 260 may have the same trend of change of the degree of conduction, and the switch circuits 210 and 240 may have the opposite trend of the change of the degree of conduction. When the control circuit 230 determines that the amplifier 220 is operating in the second high power state, the control circuit 230 turns off the switch circuits 210 and 250 and turns on the switch circuits 240 and 260 .

然而本發明並不限定開關電路210及250需接收相同的訊號，在有些實施例中，開關電路210及250也可分別接收第一控制訊號SIGctrl1及與第一控制訊號SIGctrl1有關的控制訊號。相似地，在有些實施例中，開關電路240及260也可同樣接收第二控制訊號SIGctrl2，或者在接收第一控制訊號SIGctrl1之後，共用相同的反相器產生第二控制訊號SIGctrl2。However, the present invention does not limit the switch circuits 210 and 250 to receive the same signal. In some embodiments, the switch circuits 210 and 250 can also receive the first control signal SIGctrl1 and a control signal related to the first control signal SIGctrl1 respectively. Similarly, in some embodiments, the switch circuits 240 and 260 can also receive the second control signal SIGctrl2, or share the same inverter to generate the second control signal SIGctrl2 after receiving the first control signal SIGctrl1.

第4圖是本發明另一實施例之放大電路300的示意圖，放大電路300與放大電路200具有相似的結構，並可根據相似的原理操作。然而，在放大電路300中，放大器320可包含電晶體M5、電阻R3及電晶體M6。放大器320亦可包含電感L5及電感L6。電感L5具有第一端及第二端，電感L5的第一端可耦接於系統電壓端VDD。電晶體M5具有第一端及第二端，電晶體M5的第一端可耦接於電感L5的第二端，而電晶體M5的控制端可耦接於偏壓端Vbias。電阻R3具有第一端及第二端，電阻R3的第一端可耦接於電晶體M5的第二端，而電阻R3的第二端可耦接於偵測節點DN1。電晶體M6具有第一端、第二端及控制端，電晶體M6的第一端可耦接於電阻R3的第二端，而電晶體M6的控制端可耦接於放大器320的輸入端。電感L6具有第一端及第二端，電感L6的第一端可耦接於電晶體M6的第二端，而電感L6的第二端可耦接於系統電壓端VSS。FIG. 4 is a schematic diagram of an amplifying circuit 300 according to another embodiment of the present invention. The amplifying circuit 300 and the amplifying circuit 200 have similar structures and can operate according to similar principles. However, in the amplifier circuit 300, the amplifier 320 may include a transistor M5, a resistor R3, and a transistor M6. Amplifier 320 may also include inductor L5 and inductor L6. The inductor L5 has a first terminal and a second terminal, and the first terminal of the inductor L5 can be coupled to the system voltage terminal VDD. The transistor M5 has a first terminal and a second terminal, the first terminal of the transistor M5 can be coupled to the second terminal of the inductor L5, and the control terminal of the transistor M5 can be coupled to the bias terminal Vbias. The resistor R3 has a first end and a second end, the first end of the resistor R3 can be coupled to the second end of the transistor M5, and the second end of the resistor R3 can be coupled to the detection node DN1. The transistor M6 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M6 can be coupled to the second terminal of the resistor R3 , and the control terminal of the transistor M6 can be coupled to the input terminal of the amplifier 320 . The inductor L6 has a first terminal and a second terminal, the first terminal of the inductor L6 can be coupled to the second terminal of the transistor M6, and the second terminal of the inductor L6 can be coupled to the system voltage terminal VSS.

也就是說，相較於放大電路200，在放大電路300中，電阻R3可以設置在電晶體M5與電晶體M6之間。在此情況下，控制電路330也可調整電晶體M7與參考壓降電阻DR1的位置，使得參考節點RN1能夠提供與偵測節點DN1相對應的電壓。舉例來說，控制電路330可包含電晶體M7。電晶體M7具有第一端、第二端及控制端，電晶體M7的第一端可耦接於系統電壓端VDD，電晶體M7的第二端可耦接於參考壓降電阻DR1的第一端，而電晶體M7的控制端可耦接於偏壓端Vbias。此外，參考壓降電阻DR1的第二端則可耦接至參考節點RN1及電流源332。That is to say, compared with the amplifying circuit 200, in the amplifying circuit 300, the resistor R3 can be disposed between the transistor M5 and the transistor M6. In this case, the control circuit 330 can also adjust the positions of the transistor M7 and the reference voltage drop resistor DR1, so that the reference node RN1 can provide a voltage corresponding to the detection node DN1. For example, control circuit 330 may include transistor M7. The transistor M7 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M7 can be coupled to the system voltage terminal VDD, and the second terminal of the transistor M7 can be coupled to the first terminal of the reference voltage drop resistor DR1. terminal, and the control terminal of the transistor M7 can be coupled to the bias terminal Vbias. In addition, the second end of the reference voltage drop resistor DR1 can be coupled to the reference node RN1 and the current source 332 .

再者，在放大電路300中，開關電路340可包含反相器342，反相器342可以將第一控制訊號SIGctrl1反相以產生第二控制訊號SIGctrl2。此外，開關電路360也可接收反相器342所產生的第二控制訊號SIGctrl2，以減少所需的元件。Furthermore, in the amplifier circuit 300, the switch circuit 340 may include an inverter 342, and the inverter 342 may invert the first control signal SIGctrl1 to generate the second control signal SIGctrl2. In addition, the switch circuit 360 can also receive the second control signal SIGctrl2 generated by the inverter 342 to reduce the required components.

在放大電路100、200及300中，為了能夠在偵測節點DN1上提供與驅動電流Id相關的電壓，會分別在放大器120、220及320中設置電阻R1、R2及R3。然而，在有些實施例中，電阻R1、R2及R3所造成的壓降可能會降低放大器120、220及320的線性度。因此，在有些實施例中，放大電路可以將偵測節點設置在放大電路的外部，例如是控制電路中，以避免影響放大器的線性表現。In the amplifier circuits 100 , 200 and 300 , in order to provide a voltage related to the driving current Id on the detection node DN1 , resistors R1 , R2 and R3 are set in the amplifiers 120 , 220 and 320 , respectively. However, in some embodiments, the voltage drop caused by resistors R1 , R2 and R3 may degrade the linearity of amplifiers 120 , 220 and 320 . Therefore, in some embodiments, the amplifier circuit may set the detection node outside the amplifier circuit, such as in the control circuit, to avoid affecting the linearity performance of the amplifier.

第5圖是本發明另一實施例之放大電路400的示意圖，放大電路400與放大電路100具有相似的結構，並可根據相似的原理操作。舉例來說，放大器420可包含、電晶體M9。放大器420亦可包含電感L7及電感L8。電感L7具有第一端及第二端，電感L7的第一端可耦接於系統電壓端VDD，而電感L7的第二端可耦接於放大器420的輸出端。電晶體M9具有第一端、第二端及控制端，電晶體M9的第一端可耦接於電感L7的第二端或放大器420的輸出端，而電晶體M9的控制端可耦接於放大器420的輸入端。電感L8具有第一端及第二端，電感L8的第一端可耦接於電晶體M9的第二端，而電感L8的第二端可耦接於系統電壓端VSS。FIG. 5 is a schematic diagram of an amplifying circuit 400 according to another embodiment of the present invention. The amplifying circuit 400 and the amplifying circuit 100 have similar structures and can operate according to similar principles. For example, amplifier 420 may include transistor M9. Amplifier 420 may also include inductor L7 and inductor L8. The inductor L7 has a first terminal and a second terminal. The first terminal of the inductor L7 can be coupled to the system voltage terminal VDD, and the second terminal of the inductor L7 can be coupled to the output terminal of the amplifier 420 . The transistor M9 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M9 can be coupled to the second terminal of the inductor L7 or the output terminal of the amplifier 420, and the control terminal of the transistor M9 can be coupled to the output terminal of the amplifier 420. The input of amplifier 420. The inductor L8 has a first terminal and a second terminal, the first terminal of the inductor L8 can be coupled to the second terminal of the transistor M9, and the second terminal of the inductor L8 can be coupled to the system voltage terminal VSS.

在此情況下，控制電路430可包含參考壓降電阻DR2、參考壓降電阻DR3、電晶體M8及比較器434。控制電路430亦可包含電流源432。In this case, the control circuit 430 may include a reference voltage drop resistor DR2 , a reference voltage drop resistor DR3 , a transistor M8 and a comparator 434 . The control circuit 430 may also include a current source 432 .

參考壓降電阻DR2具有第一端及第二端，參考壓降電阻DR2的第一端可耦接於系統電壓端VDD，而參考壓降電阻DR2的第二端可耦接於偵測節點DN1。電晶體M8具有第一端、第二端及控制端，電晶體M8的第一端可耦接於參考壓降電阻DR2的第二端，電晶體M8的第二端可耦接於系統電壓端VSS，而電晶體M8的控制端可耦接於放大器420的輸入端。如此一來，電晶體M8所產生的電流會與放大器420中電晶體M9所產生的電流同步變化，因此偵測節點DN1上的電壓也會與驅動電流Id有關。The reference voltage drop resistor DR2 has a first end and a second end, the first end of the reference voltage drop resistor DR2 can be coupled to the system voltage terminal VDD, and the second end of the reference voltage drop resistor DR2 can be coupled to the detection node DN1 . The transistor M8 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M8 can be coupled to the second terminal of the reference voltage drop resistor DR2, and the second terminal of the transistor M8 can be coupled to the system voltage terminal VSS, and the control terminal of the transistor M8 can be coupled to the input terminal of the amplifier 420 . In this way, the current generated by the transistor M8 changes synchronously with the current generated by the transistor M9 in the amplifier 420 , so the voltage on the detection node DN1 is also related to the driving current Id.

參考壓降電阻DR3具有第一端及第二端，參考壓降電阻DR3的第一端可耦接於系統電壓端VDD，而參考壓降電阻DR3的第二端可耦接於參考節點RN1以根據參考電流Iref1產生參考電壓Vref。電流源432可耦接於參考壓降電阻DR3，並可提供參考電流Iref1以使參考壓降電阻DR3產生壓降。The reference voltage drop resistor DR3 has a first end and a second end, the first end of the reference voltage drop resistor DR3 can be coupled to the system voltage terminal VDD, and the second end of the reference voltage drop resistor DR3 can be coupled to the reference node RN1 to The reference voltage Vref is generated according to the reference current Iref1. The current source 432 can be coupled to the reference voltage drop resistor DR3, and can provide the reference current Iref1 to generate a voltage drop across the reference voltage drop resistor DR3.

比較器434具有第一輸入端、第二輸入端及輸出端。比較器434的第一輸入端可耦接於偵測節點DN1，比較器434的第二輸入端可耦接於參考節點RN1以接收參考電壓Vref，而比較器434的輸出端可以根據第一輸入端的電壓及第二輸入端的電壓輸出第一控制訊號SIGctrl1以控制開關電路210、340、250及360。The comparator 434 has a first input terminal, a second input terminal and an output terminal. The first input terminal of the comparator 434 can be coupled to the detection node DN1, the second input terminal of the comparator 434 can be coupled to the reference node RN1 to receive the reference voltage Vref, and the output terminal of the comparator 434 can be based on the first input The voltage of the terminal and the voltage of the second input terminal output the first control signal SIGctrl1 to control the switch circuits 210 , 340 , 250 and 360 .

在放大電路400中，由於控制電路430可以透過與電晶體M8及參考壓降電阻DR2在偵測節點DN1上產生與驅動電流Id有關的電壓，因此在放大器420中亦可省略壓降電阻，而可以避免影響放大器420的線性度。此外，在有些實施例中，由於電晶體M8主要是為了能與電晶體M9同步操作，以便在參考壓降電阻DR2上產生與驅動電流Id有關的偵測電壓，因此電晶體M8的尺寸可小於電晶體M9的尺寸，進而減少控制電路430所需的電路面積。在有些實施例中，電晶體M9的通道寬長比可例如但不限於為電晶體M8的通道寬長比的八倍。In the amplifier circuit 400, since the control circuit 430 can generate a voltage related to the driving current Id on the detection node DN1 through the transistor M8 and the reference voltage drop resistor DR2, the voltage drop resistor can also be omitted in the amplifier 420, and Affecting the linearity of amplifier 420 can be avoided. In addition, in some embodiments, since the transistor M8 is mainly to operate synchronously with the transistor M9 so as to generate a detection voltage related to the driving current Id on the reference voltage drop resistor DR2, the size of the transistor M8 can be smaller than The size of the transistor M9 in turn reduces the circuit area required for the control circuit 430 . In some embodiments, the channel width to length ratio of transistor M9 may be, for example, but not limited to, eight times the channel width to length ratio of transistor M8.

第6圖是本發明另一實施例之放大電路500的示意圖，放大電路500與放大電路200具有相似的結構，並可根據相似的原理操作。在第6圖中，放大器520可包含電晶體M10及電晶體M11。放大器520亦可包含電感L9及電感L10。電感L9具有第一端及第二端，電感L9的第一端可耦接於系統電壓端VDD。電晶體M10具有第一端、第二端及控制端，電晶體M10的第一端可耦接於電感L9的第二端及放大器520的輸出端，而電晶體M10的控制端可耦接於偏壓端Vbias。電晶體M11具有第一端、第二端及控制端，電晶體M11的第一端可耦接於電晶體M10的第二端，而電晶體M11的控制端可耦接於放大器520的輸入端。電感L10具有第一端及第二端，電感L10的第一端可耦接於電晶體M11的第二端，而電感L10的第二端可耦接於系統電壓端VSS。FIG. 6 is a schematic diagram of an amplifying circuit 500 according to another embodiment of the present invention. The amplifying circuit 500 and the amplifying circuit 200 have similar structures and can operate according to similar principles. In FIG. 6, amplifier 520 may include transistor M10 and transistor M11. Amplifier 520 may also include inductor L9 and inductor L10. The inductor L9 has a first terminal and a second terminal, and the first terminal of the inductor L9 can be coupled to the system voltage terminal VDD. The transistor M10 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M10 can be coupled to the second terminal of the inductor L9 and the output terminal of the amplifier 520, and the control terminal of the transistor M10 can be coupled to the output terminal of the amplifier 520. Bias terminal Vbias. The transistor M11 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M11 can be coupled to the second terminal of the transistor M10, and the control terminal of the transistor M11 can be coupled to the input terminal of the amplifier 520. . The inductor L10 has a first terminal and a second terminal, the first terminal of the inductor L10 can be coupled to the second terminal of the transistor M11 , and the second terminal of the inductor L10 can be coupled to the system voltage terminal VSS.

在此情況下，控制電路530可包含參考壓降電阻DR2、參考壓降電阻DR3、電晶體M8、比較器534、電晶體M12及電晶體M13。控制電路530亦可包含電流源532。電晶體M12具有第一端、第二端及控制端，電晶體M12的第一端可耦接於參考壓降電阻DR2的第二端，電晶體M12的第二端可耦接於電晶體M8的第一端，而電晶體M12的控制端可耦接於偏壓端Vbias。如此一來，電晶體M8及M12所產生的電流會與放大器520中電晶體M11及M10所產生的電流同步變化，因此偵測節點DN1上的電壓也會與驅動電流Id有關。In this case, the control circuit 530 may include a reference voltage drop resistor DR2, a reference voltage drop resistor DR3, a transistor M8, a comparator 534, a transistor M12, and a transistor M13. The control circuit 530 may also include a current source 532 . The transistor M12 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M12 can be coupled to the second terminal of the reference voltage drop resistor DR2, and the second terminal of the transistor M12 can be coupled to the transistor M8 The first terminal of the transistor M12 can be coupled to the bias terminal Vbias. In this way, the currents generated by the transistors M8 and M12 change synchronously with the currents generated by the transistors M11 and M10 in the amplifier 520 , so the voltage on the detection node DN1 is also related to the driving current Id.

電晶體M13具有第一端、第二端及控制端，電晶體M13的第一端可耦接於參考壓降電阻DR3的第二端，電晶體M13的第二端可耦接於電流源532，而電晶體M13的控制端可耦接於偏壓端Vbias。The transistor M13 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M13 can be coupled to the second terminal of the reference voltage drop resistor DR3, and the second terminal of the transistor M13 can be coupled to the current source 532 , and the control terminal of the transistor M13 can be coupled to the bias terminal Vbias.

由於在放大電路500中，由於控制電路530可以透過與電晶體M8、M12及參考壓降電阻DR2在偵測節點DN1上產生與驅動電流Id有關的電壓，因此在放大器520中亦可省略壓降電阻，而可以避免影響放大器520的線性度。In the amplifier circuit 500, since the control circuit 530 can generate a voltage related to the driving current Id on the detection node DN1 through the transistors M8, M12 and the reference voltage drop resistor DR2, the voltage drop can also be omitted in the amplifier 520 resistance, and can avoid affecting the linearity of the amplifier 520.

在控制電路530中，偵測節點DN1是設置在電晶體M12及參考壓降電阻DR2之間，而參考節點RN1是設置在電晶體M13及參考壓降電阻DR3之間。然而，在有些實施例中，偵測節點DN1及參考節點RN1也可以設置在其他位置。In the control circuit 530, the detection node DN1 is set between the transistor M12 and the reference voltage drop resistor DR2, and the reference node RN1 is set between the transistor M13 and the reference voltage drop resistor DR3. However, in some embodiments, the detection node DN1 and the reference node RN1 may also be located at other locations.

第7圖是本發明另一實施例之放大電路600的示意圖，放大電路600與放大電路500具有相似的結構，並可根據相似的原理操作。在第7圖中，控制電路630可包含參考壓降電阻DR2、參考壓降電阻DR3、電晶體M8、比較器634、電晶體M14及電晶體M15。控制電路630亦可包含電流源632。FIG. 7 is a schematic diagram of an amplifying circuit 600 according to another embodiment of the present invention. The amplifying circuit 600 and the amplifying circuit 500 have similar structures and can operate according to similar principles. In FIG. 7, the control circuit 630 may include a reference voltage drop resistor DR2, a reference voltage drop resistor DR3, a transistor M8, a comparator 634, a transistor M14 and a transistor M15. The control circuit 630 may also include a current source 632 .

電晶體M14具有第一端、第二端及控制端，電晶體M14的第一端可耦接於系統電壓端VDD，電晶體M14的第二端可耦接於參考壓降電阻DR2的第一端，而電晶體M15的控制端可耦接於偏壓端Vbias。如此一來，電晶體M8及M14所產生的電流會與放大器520中電晶體M11及M10所產生的電流同步變化，因此偵測節點DN1上的電壓也會與驅動電流Id有關。The transistor M14 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M14 can be coupled to the system voltage terminal VDD, and the second terminal of the transistor M14 can be coupled to the first terminal of the reference voltage drop resistor DR2 terminal, and the control terminal of the transistor M15 can be coupled to the bias terminal Vbias. In this way, the currents generated by the transistors M8 and M14 change synchronously with the currents generated by the transistors M11 and M10 in the amplifier 520 , so the voltage on the detection node DN1 is also related to the driving current Id.

電晶體M15具有第一端、第二端及控制端，電晶體M15的第一端可耦接於系統電壓端VDD，電晶體M14的第二端可耦接於參考壓降電阻DR3的第一端，而電晶體M15的控制端可耦接於偏壓端Vbias。此外，在第7圖中，偵測節點DN1可以設置在參考壓降電阻DR2及電晶體M8之間，而參考節點RN1可以設置在參考壓降電阻DR3及電流源632之間。The transistor M15 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M15 can be coupled to the system voltage terminal VDD, and the second terminal of the transistor M14 can be coupled to the first terminal of the reference voltage drop resistor DR3 terminal, and the control terminal of the transistor M15 can be coupled to the bias terminal Vbias. In addition, in FIG. 7 , the detection node DN1 can be set between the reference voltage drop resistor DR2 and the transistor M8 , and the reference node RN1 can be set between the reference voltage drop resistor DR3 and the current source 632 .

在放大電路100至600中，控制電路130至630可利用電流源132至632在參考壓降電阻DR1或DR3上產生壓降以在參考節點RN1上提供對應的參考電壓Vref，然而在有些實施例中，電流源132至632也可利用分壓電阻來替代。In the amplifier circuits 100 to 600 , the control circuits 130 to 630 may utilize the current sources 132 to 632 to generate a voltage drop across the reference voltage drop resistor DR1 or DR3 to provide the corresponding reference voltage Vref on the reference node RN1 , however in some embodiments Among them, the current sources 132 to 632 can also be replaced by voltage dividing resistors.

第8圖是本發明另一實施例之放大電路700的示意圖，放大電路700與放大電路100具有相似的結構，並可根據相似的原理操作。在第8圖中，控制電路730可包含分壓電阻VR1、分壓電阻VR2及比較器734。分壓電阻VR1具有第一端及第二端，分壓電阻VR1的第一端可耦接於系統電壓端VDD，而分壓電阻VR1的第二端可耦接於參考節點RN1。分壓電阻VR2具有第一端及第二端，分壓電阻VR2的第一端可耦接於參考節點RN1以提供參考電壓Vref，而分壓電阻VR2的第二端可耦接於系統電壓端VSS。FIG. 8 is a schematic diagram of an amplifying circuit 700 according to another embodiment of the present invention. The amplifying circuit 700 and the amplifying circuit 100 have similar structures and can operate according to similar principles. In FIG. 8 , the control circuit 730 may include a voltage dividing resistor VR1 , a voltage dividing resistor VR2 and a comparator 734 . The voltage dividing resistor VR1 has a first terminal and a second terminal, the first terminal of the voltage dividing resistor VR1 can be coupled to the system voltage terminal VDD, and the second terminal of the voltage dividing resistor VR1 can be coupled to the reference node RN1. The voltage dividing resistor VR2 has a first terminal and a second terminal, the first terminal of the voltage dividing resistor VR2 can be coupled to the reference node RN1 to provide the reference voltage Vref, and the second terminal of the voltage dividing resistor VR2 can be coupled to the system voltage terminal VSS.

在此情況下，透過選擇具有適當阻值的分壓電阻VR1及VR2，就可以在參考節點RN1上提供所需的參考電壓Vref，使得比較器734能夠對應地輸出第一控制訊號SIGctrl1。In this case, by selecting the voltage dividing resistors VR1 and VR2 with appropriate resistance values, the required reference voltage Vref can be provided on the reference node RN1, so that the comparator 734 can correspondingly output the first control signal SIGctrl1.

綜上所述，本發明的實施例所提供之放大電路可以根據放大器所產生的驅動電流大小控制設置在放大器輸入端的開關電路，以免放大器因為操作在過高的功率狀態下而受損。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 To sum up, the amplifier circuit provided by the embodiment of the present invention can control the switch circuit disposed at the input end of the amplifier according to the driving current generated by the amplifier, so as to prevent the amplifier from being damaged due to operation in an excessively high power state. The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.

100、200、300、400、500、600、700: 放大電路 110、140、210、240、250、260、340、360: 開關電路 120、220、320、420、520: 放大器 130、230、330、430、530、630、730: 控制電路 132、232、332、432、532、632 電流源 134、234、334、434、534、634、734: 比較器 DR1、DR2、DR3: 參考壓降電阻 M1至M19: 電晶體 R1至R7: 電阻 L1至L12: 電感 RN1: 參考節點 DN1: 偵測節點 VDD、VSS: 系統電壓端 SIG RF1、SIG RF2: 射頻訊號 Id: 驅動電流 Iref1、Iref2: 參考電流 Vref: 參考電壓 IN: 訊號輸入端 OUT: 輸出端 SIGctrl1、SIGctrl2、SIGctrl3、SIGctrl4: 控制訊號 142、238A、238B、342: 反相器 Vbias: 偏壓端 VR1、VR2: 分壓電阻 T1、T2、T3: 時段 100, 200, 300, 400, 500, 600, 700: Amplifier circuits 110, 140, 210, 240, 250, 260, 340, 360: Switch circuits 120, 220, 320, 420, 520: Amplifiers 130, 230, 330 , 430, 530, 630, 730: Control circuit 132, 232, 332, 432, 532, 632 Current source 134, 234, 334, 434, 534, 634, 734: Comparator DR1, DR2, DR3: Reference voltage drop resistor M1 to M19: Transistor R1 to R7: Resistor L1 to L12: Inductor RN1: Reference node DN1: Detection node VDD, VSS: System voltage terminal SIG RF1 , SIG RF2 : RF signal Id: Drive current Iref1, Iref2: Reference current Vref: reference voltage IN: signal input terminal OUT: output terminal T3: Period

第1圖是本發明一實施例之放大電路的示意圖。 第2圖是第1圖之放大電路在不同功率狀態下的節點電壓及控制訊號波形的示意圖。 第3圖是本發明另一實施例之放大電路的示意圖。 第4圖是本發明另一實施例之放大電路的示意圖。 第5圖是本發明另一實施例之放大電路的示意圖。 第6圖是本發明另一實施例之放大電路的示意圖。 第7圖是本發明另一實施例之放大電路的示意圖。 第8圖是本發明另一實施例之放大電路的示意圖。 FIG. 1 is a schematic diagram of an amplifier circuit according to an embodiment of the present invention. FIG. 2 is a schematic diagram of node voltages and control signal waveforms of the amplifier circuit of FIG. 1 under different power states. FIG. 3 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention. FIG. 4 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention. FIG. 5 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention. FIG. 6 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention. FIG. 7 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention. FIG. 8 is a schematic diagram of an amplifying circuit according to another embodiment of the present invention.

400: 放大電路 210、250、340、360: 開關電路 420: 放大器 430: 控制電路 432: 電流源 434: 比較器 M9、M8: 電晶體 L7、L8: 電感 RN1: 參考節點 DN1: 偵測節點 VDD、VSS: 系統電壓端 SIG RF1: 射頻訊號 Id: 驅動電流 Iref1: 參考電流 Vref: 參考電壓 IN: 訊號輸入端 OUT: 輸出端 SIGctrl1、SIGctrl2: 控制訊號 342: 反相器 DR2、DR3: 參考壓降電阻 400: Amplifier circuit 210, 250, 340, 360: Switch circuit 420: Amplifier 430: Control circuit 432: Current source 434: Comparator M9, M8: Transistor L7, L8: Inductor RN1: Reference node DN1: Detection node VDD , VSS: System voltage terminal SIG RF1 : RF signal Id: Drive current Iref1: Reference current Vref: Reference voltage IN: Signal input terminal OUT: Output terminal SIGctrl1, SIGctrl2: Control signal 342: Inverter DR2, DR3: Reference voltage drop resistance

Claims (18)

一種放大電路，包含： 一第一開關電路，具有一第一端耦接於一第一系統電壓端，一第二端，及一控制端用以接收一第一控制訊號或與該第一控制訊號相關的一第二控制訊號； 一放大器，具有一輸入端耦接於該第一開關電路之該第二端，用以輸入一射頻訊號，一輸出端，用以輸出一放大後射頻訊號； 一控制電路，耦接於該放大器，用以根據該放大器所導通之一驅動電流產生該第一控制訊號； 其中： 當該控制電路判斷該放大器是操作在一第一高功率狀態時，該控制電路根據該驅動電流的大小控制該第一控制訊號以調節該第一開關電路的該第一端與該第二端之間的導通程度； 當該控制電路判斷該放大器是操作在一低功率狀態時，該控制電路控制該第一控制訊號以將該第一開關電路截止；及 當該控制電路判斷該放大器是操作在一第二高功率狀態時，該控制電路控制該第一控制訊號以將該第一開關電路導通。 An amplifying circuit comprising: A first switch circuit has a first terminal coupled to a first system voltage terminal, a second terminal, and a control terminal for receiving a first control signal or a second control signal related to the first control signal control signal; an amplifier having an input end coupled to the second end of the first switch circuit for inputting a radio frequency signal, and an output end for outputting an amplified radio frequency signal; a control circuit, coupled to the amplifier, for generating the first control signal according to a driving current turned on by the amplifier; in: When the control circuit determines that the amplifier is operating in a first high power state, the control circuit controls the first control signal according to the magnitude of the driving current to adjust the first end and the second end of the first switch circuit The degree of conduction between; When the control circuit determines that the amplifier is operating in a low power state, the control circuit controls the first control signal to turn off the first switch circuit; and When the control circuit determines that the amplifier is operating in a second high power state, the control circuit controls the first control signal to turn on the first switch circuit. 如請求項1所述之放大電路，其中該控制電路包含： 一第一比較器，具有一第一輸入端耦接於一偵測節點，一第二輸入端耦接於一參考節點用以輸入一參考電壓，及一輸出端，其中該第一比較器用以根據該第一輸入端的電壓與該第二輸入端的電壓輸出該第一控制訊號，且該第一輸入端的電壓與該驅動電流有關。 The amplifier circuit of claim 1, wherein the control circuit comprises: A first comparator has a first input terminal coupled to a detection node, a second input terminal coupled to a reference node for inputting a reference voltage, and an output terminal, wherein the first comparator is used for The first control signal is output according to the voltage of the first input terminal and the voltage of the second input terminal, and the voltage of the first input terminal is related to the driving current. 如請求項2所述之放大電路，其中該控制電路另包含： 一第一分壓電阻，具有一第一端耦接於一第二系統電壓端，及一第二端耦接於該參考節點；及 一第二分壓電阻，具有一第一端耦接於該參考節點，用以提供該參考電壓，及一第二端耦接於該第一系統電壓端。 The amplifier circuit of claim 2, wherein the control circuit further comprises: a first voltage dividing resistor having a first end coupled to a second system voltage end, and a second end coupled to the reference node; and A second voltage dividing resistor has a first end coupled to the reference node for providing the reference voltage, and a second end coupled to the first system voltage end. 如請求項2所述之放大電路，其中該控制電路另包含： 一第一參考壓降電阻，具有一第一端耦接於一第二系統電壓端，及一第二端耦接於該參考節點；該第一參考壓降電阻用以根據一參考電流產生該參考電壓。 The amplifier circuit of claim 2, wherein the control circuit further comprises: a first reference voltage drop resistor, having a first end coupled to a second system voltage end, and a second end coupled to the reference node; the first reference voltage drop resistor is used for generating the reference voltage according to a reference current reference voltage. 如請求項4所述之放大電路，其中該放大器包含： 一第一電阻，具有一第一端耦接於該第二系統電壓端，及一第二端耦接於該偵測節點；及 一第一電晶體，具有一第一端耦接於該放大器的該輸出端，一第二端，及一控制端耦接於該放大器的該輸入端。 The amplifier circuit of claim 4, wherein the amplifier comprises: a first resistor, having a first terminal coupled to the second system voltage terminal, and a second terminal coupled to the detection node; and A first transistor has a first end coupled to the output end of the amplifier, a second end, and a control end coupled to the input end of the amplifier. 如請求項2所述之放大電路，其中該放大器包含： 一第二電阻，具有一第一端耦接於一第二系統電壓端，及一第二端耦接於該偵測節點； 一第二電晶體，具有一第一端耦接於該偵測節點與該放大器的該輸出端，一第二端，及一控制端耦接於一偏壓端；及 一第三電晶體，具有一第一端耦接於該第二電晶體的該第二端，一第二端，及一控制端耦接於該放大器的該輸入端。 The amplifier circuit of claim 2, wherein the amplifier comprises: a second resistor, having a first terminal coupled to a second system voltage terminal, and a second terminal coupled to the detection node; a second transistor having a first terminal coupled to the detection node and the output terminal of the amplifier, a second terminal, and a control terminal coupled to a bias terminal; and A third transistor has a first end coupled to the second end of the second transistor, a second end, and a control end coupled to the input end of the amplifier. 如請求項6所述之放大電路，其中該控制電路另包含： 一第四電晶體，具有一第一端耦接於一第一參考壓降電阻的該第二端，一第二端耦接於一第一電流源，及一控制端耦接於該偏壓端。 The amplifier circuit of claim 6, wherein the control circuit further comprises: a fourth transistor having a first end coupled to the second end of a first reference voltage drop resistor, a second end coupled to a first current source, and a control end coupled to the bias voltage end. 如請求項2所述之放大電路，其中該放大器包含： 一第五電晶體，具有一第一端耦接於該放大器的該輸出端，一第二端，及一控制端耦接於一偏壓端； 一第三電阻，具有一第一端耦接於該第五電晶體的該第二端，及一第二端耦接於該偵測節點；及 一第六電晶體，具有一第一端耦接於該第三電阻的該第二端，一第二端，及一控制端耦接於該放大器的該輸入端。 The amplifier circuit of claim 2, wherein the amplifier comprises: a fifth transistor, having a first end coupled to the output end of the amplifier, a second end, and a control end coupled to a bias end; a third resistor having a first end coupled to the second end of the fifth transistor, and a second end coupled to the detection node; and A sixth transistor has a first end coupled to the second end of the third resistor, a second end, and a control end coupled to the input end of the amplifier. 如請求項8所述之放大電路，其中該控制電路另包含： 一第七電晶體，具有一第一端耦接於一第二系統電壓端，一第二端耦接於該參考節點，及一控制端耦接於該偏壓端。 The amplifier circuit of claim 8, wherein the control circuit further comprises: A seventh transistor has a first terminal coupled to a second system voltage terminal, a second terminal coupled to the reference node, and a control terminal coupled to the bias terminal. 如請求項1所述之放大電路，其中該控制電路包含： 一第二參考壓降電阻，具有一第一端耦接於一第二系統電壓端，及一第二端耦接於一偵測節點； 一第八電晶體，具有一第一端耦接於該第二參考壓降電阻的該第二端，一第二端耦接於該第一系統電壓端，及一控制端耦接於該放大器的該輸入端；及 一第二比較器，具有一第一輸入端耦接於一偵測節點，一第二輸入端耦接於一參考節點用以輸入一參考電壓，及一輸出端，其中該第二比較器用以根據該第一輸入端的電壓與該第二輸入端的該參考電壓輸出該第一控制訊號，且該第一輸入端的電壓與該驅動電流有關。 The amplifier circuit of claim 1, wherein the control circuit comprises: a second reference voltage drop resistor, having a first end coupled to a second system voltage end, and a second end coupled to a detection node; an eighth transistor having a first end coupled to the second end of the second reference voltage drop resistor, a second end coupled to the first system voltage end, and a control end coupled to the amplifier of that input; and A second comparator has a first input terminal coupled to a detection node, a second input terminal coupled to a reference node for inputting a reference voltage, and an output terminal, wherein the second comparator is used for The first control signal is output according to the voltage of the first input terminal and the reference voltage of the second input terminal, and the voltage of the first input terminal is related to the driving current. 如請求項10所述之放大電路，其中該控制電路另包含： 一第三參考壓降電阻，具有一第一端耦接於該第二系統電壓端，及一第二端耦接於該參考節點；該第三參考壓降電阻用以根據一參考電流以產生該參考電壓。 The amplifier circuit of claim 10, wherein the control circuit further comprises: A third reference voltage drop resistor has a first end coupled to the second system voltage end, and a second end coupled to the reference node; the third reference voltage drop resistor is used to generate a reference current according to a the reference voltage. 如請求項11所述之放大電路，其中該放大器包含： 一第九電晶體，具有一第一端耦接於該放大器的該輸出端，一第二端，及一控制端耦接於該放大器的該輸入端。 The amplifier circuit of claim 11, wherein the amplifier comprises: A ninth transistor has a first end coupled to the output end of the amplifier, a second end, and a control end coupled to the input end of the amplifier. 如請求項11所述之放大電路，其中該放大器包含： 一第十電晶體，具有一第一端耦接於該放大器的該輸出端，一第二端，及一控制端耦接於一偏壓端；及 一第十一電晶體，具有一第一端耦接於該第十電晶體的該第二端，一第二端，及一控制端耦接於該放大器的該輸入端。 The amplifier circuit of claim 11, wherein the amplifier comprises: a tenth transistor, having a first end coupled to the output end of the amplifier, a second end, and a control end coupled to a bias end; and An eleventh transistor has a first end coupled to the second end of the tenth transistor, a second end, and a control end coupled to the input end of the amplifier. 如請求項13所述之放大電路，其中該控制電路另包含： 一第十二電晶體，具有一第一端耦接於該第二參考壓降電阻的該第二端，一第二端耦接於該第八電晶體的該第一端，及一控制端耦接於該偏壓端；及 一第十三電晶體，具有一第一端耦接於該第三參考壓降電阻的該第二端，一第二端，及一控制端耦接於該偏壓端。 The amplifier circuit of claim 13, wherein the control circuit further comprises: a twelfth transistor, having a first end coupled to the second end of the second reference voltage drop resistor, a second end coupled to the first end of the eighth transistor, and a control end coupled to the bias terminal; and A thirteenth transistor has a first end coupled to the second end of the third reference voltage drop resistor, a second end, and a control end coupled to the bias end. 如請求項11所述之放大電路，其中該控制電路另包含： 一第十四電晶體，具有一第一端耦接於該第二系統電壓端，一第二端耦接於第二參考壓降電阻的該第一端，及一控制端耦接於一偏壓端；及 一第十五電晶體，具有一第一端耦接於該第二系統電壓端，一第二端耦接於該第三參考壓降電阻的該第一端，及一控制端耦接於該偏壓端。 The amplifier circuit of claim 11, wherein the control circuit further comprises: a fourteenth transistor, having a first end coupled to the second system voltage end, a second end coupled to the first end of the second reference voltage drop resistor, and a control end coupled to a bias crimped end; and a fifteenth transistor, having a first end coupled to the second system voltage end, a second end coupled to the first end of the third reference voltage drop resistor, and a control end coupled to the Bias terminal. 如請求項1所述之放大電路，另包含： 一第二開關電路，具有一第一端耦接於一射頻訊號輸入端，一第二端耦接於該第一開關電路的該第二端，及一控制端用以接收該第一控制訊號，其中： 當該控制電路判斷該放大器是操作在該第一高功率狀態時，該控制電路根據該驅動電流的大小調節該第二開關電路的該第一端與該第二端之間的導通程度； 當該控制電路判斷該放大器是操作在該低功率狀態時，該控制電路控制該第一控制訊號以將該第二開關電路導通；及 當該控制電路判斷該放大器是操作在該第二高功率狀態時，該控制電路控制該第一控制訊號以將該第二開關電路截止。 The amplifying circuit as described in claim 1, further comprising: A second switch circuit has a first end coupled to a radio frequency signal input end, a second end coupled to the second end of the first switch circuit, and a control end for receiving the first control signal ,in: When the control circuit determines that the amplifier is operating in the first high-power state, the control circuit adjusts the degree of conduction between the first end and the second end of the second switch circuit according to the magnitude of the driving current; When the control circuit determines that the amplifier is operating in the low power state, the control circuit controls the first control signal to turn on the second switch circuit; and When the control circuit determines that the amplifier is operating in the second high power state, the control circuit controls the first control signal to turn off the second switch circuit. 如請求項16所述之放大電路，另包含： 一第三開關電路，且該第三開關電路具有一第一端耦接於該第二開關電路的該第二端，一第二端耦接於該放大器的該輸入端，及一控制端用以接收該第一控制訊號或與該第一控制訊號有關的一第三控制訊號；以及 一第四開關電路，具有一第一端耦接於該第三開關電路的該第二端，一第二端耦接於該第一系統電壓端，及一控制端用以接收與該第一控制訊號有關的一第四控制訊號； 其中： 當該控制電路判斷該放大器是操作在該第一高功率狀態時，該控制電路根據該驅動電流的大小調節該第三開關電路的該第一端與該第二端之間的導通程度並調節該第四開關電路的該第一端與該第二端之間的導通程度； 當該控制電路判斷該放大器是操作在該低功率狀態時，該控制電路控制該第三開關電路導通與該第四開關電路截止；及 當該控制電路判斷該放大器是操作在該第二高功率狀態時，該控制電路控制該第三開關電路截止與該第四開關電路導通。 The amplifying circuit of claim 16, further comprising: A third switch circuit, and the third switch circuit has a first end coupled to the second end of the second switch circuit, a second end coupled to the input end of the amplifier, and a control end for to receive the first control signal or a third control signal related to the first control signal; and A fourth switch circuit has a first end coupled to the second end of the third switch circuit, a second end coupled to the first system voltage end, and a control end for receiving and communicating with the first a fourth control signal related to the control signal; in: When the control circuit determines that the amplifier is operating in the first high power state, the control circuit adjusts the degree of conduction between the first end and the second end of the third switch circuit according to the magnitude of the driving current and adjusts the The degree of conduction between the first end and the second end of the fourth switch circuit; When the control circuit determines that the amplifier is operating in the low power state, the control circuit controls the third switch circuit to be turned on and the fourth switch circuit to be turned off; and When the control circuit determines that the amplifier is operating in the second high power state, the control circuit controls the third switch circuit to be turned off and the fourth switch circuit to be turned on. 如請求項1所述之放大電路，其中該第一開關電路另包含： 一反相器，具有一輸入端用以接收該第一控制訊號，及一輸出端用以輸出該第二控制訊號。 The amplifier circuit of claim 1, wherein the first switch circuit further comprises: An inverter has an input terminal for receiving the first control signal, and an output terminal for outputting the second control signal.
TW110105878A 2020-10-14 2020-10-14 Amplification circuit TWI770828B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188277B1 (en) * 1998-08-19 2001-02-13 Harris Corporation Power amplifier having monitoring and circuit protection
TW201044773A (en) * 2009-06-02 2010-12-16 Richwave Technology Corp Power amplifier integrated circuit with compensation mechanism for temperature and output power
WO2013097361A1 (en) * 2011-12-30 2013-07-04 中兴通讯股份有限公司 Protection circuit and method for power amplifier transistor and power amplifier transistor
US20140240884A1 (en) * 2013-02-25 2014-08-28 Advanced Power Electronics Corp. Over current protection circuit
US20140285262A1 (en) * 2013-03-19 2014-09-25 Fujitsu Limited Control device of power amplifier and method of controlling power amplifier
US20190007002A1 (en) * 2016-03-25 2019-01-03 Skyworks Solutions, Inc. Apparatus and methods for overload protection of low noise amplifiers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188277B1 (en) * 1998-08-19 2001-02-13 Harris Corporation Power amplifier having monitoring and circuit protection
TW201044773A (en) * 2009-06-02 2010-12-16 Richwave Technology Corp Power amplifier integrated circuit with compensation mechanism for temperature and output power
WO2013097361A1 (en) * 2011-12-30 2013-07-04 中兴通讯股份有限公司 Protection circuit and method for power amplifier transistor and power amplifier transistor
US20140240884A1 (en) * 2013-02-25 2014-08-28 Advanced Power Electronics Corp. Over current protection circuit
US20140285262A1 (en) * 2013-03-19 2014-09-25 Fujitsu Limited Control device of power amplifier and method of controlling power amplifier
US20190007002A1 (en) * 2016-03-25 2019-01-03 Skyworks Solutions, Inc. Apparatus and methods for overload protection of low noise amplifiers

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