TWI767436B - Manufacturing method of laminated body, manufacturing method of semiconductor element, and manufacturing method of rewiring layer - Google Patents

Manufacturing method of laminated body, manufacturing method of semiconductor element, and manufacturing method of rewiring layer Download PDF

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TWI767436B
TWI767436B TW109142641A TW109142641A TWI767436B TW I767436 B TWI767436 B TW I767436B TW 109142641 A TW109142641 A TW 109142641A TW 109142641 A TW109142641 A TW 109142641A TW I767436 B TWI767436 B TW I767436B
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resin composition
photosensitive resin
layer
formula
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TW202115498A (en
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岩井悠
伊藤勝志
斯特凡 萬克魯斯特
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日商富士軟片股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/088Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00Treatment by energy or chemical effects
    • B32B2310/14Corona, ionisation, electrical discharge, plasma treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

本發明提供一種密著性優異的積層體的製造方法及半導體元件的製造方法,包括:感光性樹脂組成物層形成步驟、對感光性樹脂組成物層進行曝光的步驟、進行負型顯影處理的步驟、於感光性樹脂組成物層的表面形成金屬層的步驟、及對金屬層及感光性樹脂組成物層的至少一部分進行表面活性化處理的表面活性化處理步驟,進而包括再次依下述順序進行感光性樹脂組成物層形成步驟、曝光步驟及顯影處理步驟;感光性樹脂組成物包含選自聚醯亞胺前驅物等的樹脂,進而滿足樹脂包含聚合性基、及感光性樹脂組成物包含聚合性化合物的至少一者。The present invention provides a method for producing a laminate having excellent adhesion and a method for producing a semiconductor element, comprising: a step of forming a photosensitive resin composition layer, a step of exposing the photosensitive resin composition layer, and a step of performing a negative development process. step, the step of forming a metal layer on the surface of the photosensitive resin composition layer, and the surface activation treatment step of subjecting at least a part of the metal layer and the photosensitive resin composition layer to a surface activation treatment, further including the following sequence again The photosensitive resin composition layer forming step, the exposure step and the developing treatment step are carried out; the photosensitive resin composition comprises a resin selected from polyimide precursors and the like, and further satisfies that the resin contains a polymerizable group, and the photosensitive resin composition contains At least one of polymerizable compounds.

Description

積層體的製造方法、半導體元件的製造方法及再配線層的製造方法Manufacturing method of laminated body, manufacturing method of semiconductor element, and manufacturing method of rewiring layer

本發明是有關於一種積層體的製造方法及半導體元件的製造方法。尤其是有關於一種用於半導體元件的再配線層用層間絕緣膜的製造的積層體的製造方法。The present invention relates to a method of manufacturing a laminate and a method of manufacturing a semiconductor element. In particular, it relates to a method for producing a laminate used for producing an interlayer insulating film for a rewiring layer of a semiconductor element.

聚醯亞胺樹脂或聚苯并噁唑樹脂等熱硬化性樹脂因耐熱性及絕緣性優異,故用於半導體元件的絕緣層等。 另外,聚醯亞胺樹脂或聚苯并噁唑樹脂因對溶劑的溶解性低,故亦以環化反應前的前驅物(聚醯亞胺前驅物或聚苯并噁唑前驅物)的狀態使用,並於應用於基板等後進行加熱,以使聚醯亞胺前驅物環化來形成硬化膜。Thermosetting resins such as polyimide resins and polybenzoxazole resins are used for insulating layers of semiconductor elements and the like because they are excellent in heat resistance and insulating properties. In addition, polyimide resin or polybenzoxazole resin is also in the state of the precursor before the cyclization reaction (polyimide precursor or polybenzoxazole precursor) because of its low solubility in solvents. It is used, and after being applied to a substrate or the like, it is heated to cyclize the polyimide precursor to form a cured film.

此處,於專利文獻1中揭示了一種包含熱塑性聚醯亞胺層及熱塑性聚醯亞胺層表面的金屬層的積層體。另外,於專利文獻1中亦記載有熱塑性聚醯亞胺層作為絕緣層而起作用。 [現有技術文獻] [專利文獻]Here, Patent Document 1 discloses a laminate including a thermoplastic polyimide layer and a metal layer on the surface of the thermoplastic polyimide layer. In addition, Patent Document 1 also describes that the thermoplastic polyimide layer functions as an insulating layer. [Prior Art Literature] [Patent Literature]

[專利文獻1]國際公開WO2004/050352號公報[Patent Document 1] International Publication WO2004/050352

[發明所欲解決之課題] 此處,若設為使用所述專利文獻1中所記載的熱塑性聚醯亞胺樹脂來作為半導體元件的再配線層用層間絕緣膜,則需要於包含熱塑性聚醯亞胺層及熱塑性聚醯亞胺層表面的金屬層的積層體上進而設置熱塑性聚醯亞胺層。然而,對在專利文獻1的所述積層體上進而設置熱塑性聚醯亞胺層進行研究的結果,可知熱塑性聚醯亞胺層與金屬層、或者熱塑性聚醯亞胺層彼此的密著性不充分。 本發明的目的在於解決所述課題,且目的在於提供一種包含聚醯亞胺等樹脂的樹脂層與樹脂層、或樹脂層與金屬層的密著性優異的積層體的製造方法、及包括所述製造方法的半導體元件的製造方法。[The problem to be solved by the invention] Here, if the thermoplastic polyimide resin described in Patent Document 1 is used as an interlayer insulating film for a rewiring layer of a semiconductor element, it is necessary to include a thermoplastic polyimide layer and a thermoplastic polyimide layer. A thermoplastic polyimide layer is further provided on the laminate of the metal layers on the surface of the amine layer. However, as a result of examining further providing a thermoplastic polyimide layer on the laminate of Patent Document 1, it was found that the adhesion between the thermoplastic polyimide layer and the metal layer, or the thermoplastic polyimide layers is not good. full. An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a method for producing a laminate having excellent adhesion between a resin layer and a resin layer, or a resin layer and a metal layer, including a resin such as polyimide, and a method including the The manufacturing method of the semiconductor element of the said manufacturing method.

[解決課題之手段] 基於所述課題,本發明者進行了研究,結果發現可藉由對感光性樹脂組成物進行負型顯影來形成樹脂層而解決所述課題。具體而言,藉由下述手段<1>、較佳為藉由<2>~<8>解決了所述課題。 <1>一種積層體的製造方法,包括:感光性樹脂組成物層形成步驟,將感光性樹脂組成物應用於基板而形成為層狀;曝光步驟,對所述感光性樹脂組成物層進行曝光;顯影處理步驟,對經所述曝光的感光性樹脂組成物層進行負型顯影處理;金屬層形成步驟,於所述顯影處理後的感光性樹脂組成物層的表面形成金屬層;及表面活性化處理步驟,對所述金屬層及感光性樹脂組成物層的至少一部分進行表面活性化處理,進而包括再次依下述順序進行所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟,所述感光性樹脂組成物包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的樹脂,進而滿足所述樹脂包含聚合性基、及所述感光性樹脂組成物包含聚合性化合物的至少一者。 <2>如<1>所述的積層體的製造方法,其中依下述順序進行3次~7次所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟。 <3>如<1>或<2>所述的積層體的製造方法,其中所述金屬層包含銅。 <4>如<1>至<3>中任一項所述的積層體的製造方法,其中所述樹脂為聚醯亞胺前驅物或聚苯并噁唑前驅物。 <5>如<1>至<4>中任一項所述的積層體的製造方法,其中所述樹脂包含由-Ar-L-Ar-所表示的部分結構;其中,Ar分別獨立地為芳香族基,L為包含可經氟原子取代的碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -或-NHCO-、或者所述的兩個以上的組合的基。 <6>如<1>至<5>中任一項所述的積層體的製造方法,其中所述表面活性化處理選自電漿處理及電暈放電處理中。 <7>如<1>至<6>中任一項所述的積層體的製造方法,其中所述感光性樹脂組成物包含光聚合起始劑。 <8>一種半導體元件的製造方法,其包括如<1>至<7>中任一項所述的積層體的製造方法。[MEANS TO SOLVE THE PROBLEM] Based on the said subject, the present inventors made research, and as a result found that the said subject can be solved by performing negative image development on a photosensitive resin composition to form a resin layer. Specifically, the above-mentioned problems are solved by the following means <1>, preferably by means of <2> to <8>. <1> A method for producing a layered product, comprising: a photosensitive resin composition layer forming step of applying the photosensitive resin composition to a substrate to form a layer; and an exposing step of exposing the photosensitive resin composition layer to light ; developing treatment step, carrying out negative development treatment on the exposed photosensitive resin composition layer; metal layer forming step, forming a metal layer on the surface of the photosensitive resin composition layer after the development treatment; and surface active The chemical treatment step includes subjecting at least a part of the metal layer and the photosensitive resin composition layer to a surface activation treatment, and further includes performing the photosensitive resin composition layer forming step, the exposing step, and In the developing treatment step, the photosensitive resin composition comprises a resin selected from the group consisting of polyimide precursors, polyimide precursors, polybenzoxazole precursors and polybenzoxazoles, so as to satisfy the resin requirements It contains a polymerizable group, and the said photosensitive resin composition contains at least one of a polymerizable compound. <2> The said photosensitive resin composition layer formation process, the said exposure process, and the said image development process process are performed 3 to 7 times in the following order, The manufacturing method of the laminated body of <1>. <3> The method for producing a laminate according to <1> or <2>, wherein the metal layer contains copper. <4> The method for producing a laminate according to any one of <1> to <3>, wherein the resin is a polyimide precursor or a polybenzoxazole precursor. <5> The method for producing a laminate according to any one of <1> to <4>, wherein the resin includes a partial structure represented by -Ar-L-Ar-; wherein Ar is each independently Aromatic group, L is an aliphatic hydrocarbon group containing 1 to 10 carbon atoms that may be substituted by fluorine atoms, -O-, -CO-, -S-, -SO 2 - or -NHCO-, or two of the above The basis for the combination of the above. <6> The method for producing a layered body according to any one of <1> to <5>, wherein the surface activation treatment is selected from plasma treatment and corona discharge treatment. <7> The manufacturing method of the layered body according to any one of <1> to <6>, wherein the photosensitive resin composition contains a photopolymerization initiator. <8> A method of manufacturing a semiconductor element including the method of manufacturing a laminate according to any one of <1> to <7>.

[發明的效果] 藉由本發明,而提供一種樹脂層與樹脂層、或樹脂層與金屬層的密著性優異的積層體的製造方法、及包括所述製造方法的半導體元件的製造方法。[Effect of invention] The present invention provides a method for producing a laminate having excellent adhesion between a resin layer and a resin layer, or a resin layer and a metal layer, and a method for producing a semiconductor element including the method.

以下所記載的本發明中的構成要素的說明有時基於本發明的具有代表性的實施方式來進行,但本發明並不限定於此種實施方式。 於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基,並且亦包含具有取代基的基。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 於本說明書中,所謂「曝光」,只要事先無特別說明,則不僅包含使用光的曝光,亦包含使用電子束、離子束等粒子束的描繪。另外,作為用於曝光的光,一般可列舉水銀燈的明線光譜、以準分子雷射為代表的遠紫外線、極紫外線(極紫外(Extreme Ultraviolet,EUV)光)、X射線、電子束等光化射線或放射線。 於本說明書中,使用「~」來表示的數值範圍是指包含「~」的前後所記載的數值作為下限值及上限值的範圍。 於本說明書中,「(甲基)丙烯酸酯」表示「丙烯酸酯」及「甲基丙烯酸酯」的兩者、或任一者,「(甲基)烯丙基」表示「烯丙基」及「甲基烯丙基」的兩者、或任一者,「(甲基)丙烯酸」表示「丙烯酸」及「甲基丙烯酸」的兩者、或任一者,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」的兩者、或任一者。 於本說明書中,「步驟」這一用語不僅表示獨立的步驟,即便於無法與其他步驟明確地加以區分的情形下,只要達成該步驟的預期的作用,則亦包含於本用語中。 於本說明書中,固體成分濃度是指除溶劑以外的其他成分相對於組成物的總質量的質量百分率。另外,只要無特別敘述,則固體成分濃度是指25℃下的濃度。 於本說明書中,只要無特別敘述,則重量平均分子量(Mw)及數量平均分子量(Mn)作為藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)而測定的聚苯乙烯換算值來定義。於本說明書中,重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由使用HLC-8220(東曹(Tosoh)(股份)製造),並將保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000、TSKgel Super HZ2000(東曹(股份)製造)用作管柱來求出。只要無特別敘述,則將溶離液設為使用四氫呋喃(Tetrahydrofuran,THF)進行了測定者。另外,只要無特別敘述,則將檢測設為使用紫外線(UV(ultraviolet)線)的波長254 nm檢測器所進行者。The description of the constituent elements in the present invention described below may be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments. In the expression of the group (atomic group) in the present specification, the expression not describing substituted and unsubstituted includes a group without a substituent, and also includes a group with a substituent. For example, "alkyl" includes not only unsubstituted alkyl groups (unsubstituted alkyl groups) but also substituted alkyl groups (substituted alkyl groups). In this specification, "exposure" includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified. In addition, as light used for exposure, light such as bright-line spectrum of mercury lamp, far-ultraviolet typified by excimer laser, extreme ultraviolet (Extreme Ultraviolet (EUV) light), X-ray, and electron beam are generally mentioned. chemical radiation or radiation. In this specification, the numerical range represented using "-" means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit. In this specification, "(meth)acrylate" means both or either of "acrylate" and "methacrylate", "(meth)allyl" means "allyl" and Both or either of "methallyl", "(meth)acrylic" means both or either of "acrylic" and "methacrylic", "(meth)acryloyl" " represents both or either of "acryloyl" and "methacryloyl". In this specification, the term "step" not only represents an independent step, but also includes in this term as long as the intended function of the step is achieved even if it cannot be clearly distinguished from other steps. In this specification, the solid content concentration refers to the mass percentage of other components other than the solvent with respect to the total mass of the composition. In addition, unless otherwise stated, the solid content concentration refers to the concentration at 25°C. In this specification, unless otherwise stated, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are defined as polystyrene conversion values measured by gel permeation chromatography (GPC). . In this specification, the weight-average molecular weight (Mw) and the number-average molecular weight (Mn) can be obtained, for example, by using HLC-8220 (manufactured by Tosoh Co., Ltd.), and combining guard column HZ-L, TSKgel Super HZM -M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by Tosoh Co., Ltd.) were used for the determination of the column. Unless otherwise stated, the elution solution was measured using tetrahydrofuran (THF). In addition, unless otherwise stated, the detection was performed using a detector with a wavelength of 254 nm of ultraviolet rays (UV (ultraviolet) rays).

本發明的積層體的製造方法的特徵在於包括:將感光性樹脂組成物應用於基板而形成為層狀的感光性樹脂組成物層形成步驟、對所述感光性樹脂組成物層進行曝光的曝光步驟、對經所述曝光的感光性樹脂組成物層進行負型顯影處理的顯影處理步驟,於所述顯影處理後的感光性樹脂組成物層的表面形成金屬層的金屬層形成步驟、及對所述金屬層及感光性樹脂組成物層的至少一部分進行表面活性化處理的表面活性化處理步驟,進而包括再次依下述順序進行所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟;所述感光性樹脂組成物包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的樹脂,進而滿足所述樹脂包含聚合性基、及所述感光性樹脂組成物包含聚合性化合物的至少一者。 如此,於積層絕緣膜時,進行負型顯影,進而進行表面活性化處理,藉此而能夠提升層間的密著性。與此相對,所述專利文獻1中並無將此種樹脂層積層的例子。另外,專利文獻1中進行正型顯影,因對經曝光的部分進行鹼顯影,故密著性容易變得不充分。進而,當進行正型顯影時,使樹脂層的未曝光部接受表面活性化處理,推測感光性樹脂組成物層(樹脂層)容易受損,而導致密著性的降低。與此相對,負型時可形成三維交聯結構,可提高膜的強度,而可實現對於表面活性化處理亦難以受損。 基於以上,本發明中,藉由採用所述手段,即便設為多層構成,亦可達成樹脂層與樹脂層、及樹脂層與金屬層之間的高密著性。 以下,對本發明的詳細情況進行說明。The method for producing a layered product of the present invention is characterized by including a photosensitive resin composition layer forming step of applying a photosensitive resin composition to a substrate to form a layered photosensitive resin composition layer, and exposing the photosensitive resin composition layer to light. step, a development treatment step of performing negative development treatment on the exposed photosensitive resin composition layer, a metal layer formation step of forming a metal layer on the surface of the photosensitive resin composition layer after the development treatment, and The surface activation treatment step of subjecting at least a part of the metal layer and the photosensitive resin composition layer to a surface activation treatment further includes performing the photosensitive resin composition layer forming step, the exposure step, and the developing treatment step; the photosensitive resin composition comprises a resin selected from polyimide precursor, polyimide, polybenzoxazole precursor and polybenzoxazole, and further satisfies the The resin contains a polymerizable group, and the photosensitive resin composition contains at least one of a polymerizable compound. In this way, when the insulating film is laminated, the negative-tone development is performed, and further the surface activation treatment is performed, whereby the adhesion between the layers can be improved. On the other hand, in the said patent document 1, there is no example which laminated|stacked such a resin layer. Moreover, in patent document 1, since positive image development is performed and the exposed part is subjected to alkali development, the adhesiveness tends to become insufficient. Furthermore, in the case of positive development, the unexposed portion of the resin layer is subjected to surface activation treatment, and it is presumed that the photosensitive resin composition layer (resin layer) is easily damaged, resulting in a decrease in adhesiveness. On the other hand, in the negative type, a three-dimensional cross-linked structure can be formed, the strength of the film can be increased, and the surface activation treatment can hardly be damaged. Based on the above, in the present invention, by adopting the above-mentioned means, even if it is a multilayer structure, high adhesion between the resin layer and the resin layer, and between the resin layer and the metal layer can be achieved. Hereinafter, the details of the present invention will be described.

<感光性樹脂組成物層形成步驟> 本發明的積層體的製造方法包括將感光性樹脂組成物應用於基板而形成為層狀的感光性樹脂組成物層形成步驟。 作為將感光性樹脂組成物應用於基板的手段,較佳為塗佈。 具體而言,作為所應用的手段,可例示浸漬塗佈法、氣刀塗佈法、簾幕式塗佈法、線棒塗佈法、凹版塗佈法、擠壓塗佈法、旋轉塗佈法、狹縫掃描法及噴墨法等。就感光性樹脂組成物層的厚度的均勻性的觀點而言,更佳為旋轉塗佈法。於旋轉塗佈法的情況下,例如可以500 rpm~2000 rpm的轉數而應用10秒~1分鐘左右。 感光性樹脂組成物層(樹脂層)的厚度較佳為以曝光後成為0.1 μm~100 μm的方式進行塗佈,更佳為以成為1 μm~50 μm的方式進行塗佈。另外,如後述的圖2所示,所形成的感光性樹脂組成物層的厚度未必需要均勻。尤其是當於具有凹凸的表面上設置感光性樹脂組成物層時,如圖2所示,可能會成為厚度不同的樹脂層。尤其是當積層多層時,作為凹部而亦會形成深度大的凹部,但就可更有效地抑制層間的剝離的方面而言,本發明對此種構成的技術價值高。再者,當本發明的積層體具有厚度不同的樹脂層時,較佳為最薄部分的樹脂層的厚度為所述厚度。 基板的種類可根據用途而適當確定,矽、氮化矽、多晶矽、氧化矽、非晶矽等半導體製作基板,石英,玻璃,光學膜,陶瓷材料,蒸鍍膜,磁性膜,反射膜,Ni、Cu、Cr、Fe等金屬基板,紙,旋塗玻璃(Spin On Glass,SOG),薄膜電晶體(Thin Film Transistor,TFT)陣列基板,電漿顯示面板(Plasma Display Panel,PDP)的電極板等,並無特別制約。本發明中,尤其較佳為半導體製作基板,更佳為矽。 另外,當於樹脂層的表面或金屬層的表面形成感光性樹脂組成物層時,樹脂層或金屬層成為基板。 於下文對感光性樹脂組成物的詳細情況進行敘述。<Photosensitive resin composition layer forming step> The manufacturing method of the laminated body of this invention includes the photosensitive resin composition layer formation process of applying a photosensitive resin composition to a board|substrate and forming it into a layer. As means for applying the photosensitive resin composition to the substrate, coating is preferred. Specifically, as the means to be applied, dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, and spin coating can be exemplified. method, slit scanning method and inkjet method. From the viewpoint of the uniformity of the thickness of the photosensitive resin composition layer, the spin coating method is more preferable. In the case of the spin coating method, for example, it can be applied at a rotation speed of 500 rpm to 2000 rpm for about 10 seconds to 1 minute. The thickness of the photosensitive resin composition layer (resin layer) is preferably applied so as to be 0.1 μm to 100 μm after exposure, and more preferably applied so as to be 1 μm to 50 μm. In addition, as shown in FIG. 2 mentioned later, the thickness of the photosensitive resin composition layer formed does not necessarily need to be uniform. In particular, when a photosensitive resin composition layer is provided on a surface having unevenness, as shown in FIG. 2 , it may become a resin layer with different thicknesses. In particular, when a plurality of layers are stacked, deep concave portions are formed as concave portions, but the present invention has a high technical value for such a configuration in that the peeling between layers can be suppressed more effectively. In addition, when the laminated body of this invention has resin layers with different thicknesses, it is preferable that the thickness of the resin layer of the thinnest part is the said thickness. The type of substrate can be appropriately determined according to the application, such as silicon, silicon nitride, polysilicon, silicon oxide, amorphous silicon and other semiconductor substrates, quartz, glass, optical films, ceramic materials, vapor deposition films, magnetic films, reflective films, Ni, Metal substrates such as Cu, Cr, Fe, paper, Spin On Glass (SOG), Thin Film Transistor (TFT) array substrates, electrode plates for Plasma Display Panel (PDP), etc. , without special restrictions. In the present invention, a semiconductor fabrication substrate is particularly preferred, and silicon is more preferred. Moreover, when a photosensitive resin composition layer is formed on the surface of a resin layer or the surface of a metal layer, a resin layer or a metal layer becomes a board|substrate. Details of the photosensitive resin composition will be described below.

<過濾步驟> 本發明的積層體的製造方法亦可包括於將感光性樹脂組成物應用於基板前對感光性樹脂組成物進行過濾的步驟。過濾較佳為使用過濾器來進行。作為過濾器孔徑,較佳為1 μm以下,更佳為0.5 μm以下,進而佳為0.1 μm以下。作為過濾器的材質,較佳為聚四氟乙烯製、聚乙烯製、尼龍製的過濾器。過濾器亦可使用預先利用有機溶劑進行了洗滌者。過濾器過濾步驟中,可將多種過濾器串聯或者並列連接來使用。當使用多種過濾器時,亦可將孔徑及/或材質不同的過濾器組合使用。另外,可對各種材料進行多次過濾,且多次過濾步驟亦可為循環過濾步驟。另外,亦可加壓來進行過濾,加壓的壓力較佳為0.05 MPa以上、0.3 MPa以下。 除使用過濾器的過濾以外,亦可使用吸附材料進行雜質的去除,亦可將過濾器過濾與吸附材料組合使用。作為吸附材料,可使用公知的吸附材料,例如可使用二氧化矽凝膠、沸石等無機系吸附材料,活性碳等有機系吸附材料。<Filtering step> The manufacturing method of the laminated body of this invention may also include the process of filtering the photosensitive resin composition before applying the photosensitive resin composition to a board|substrate. Filtration is preferably performed using a filter. The filter pore size is preferably 1 μm or less, more preferably 0.5 μm or less, and still more preferably 0.1 μm or less. The material of the filter is preferably a filter made of polytetrafluoroethylene, polyethylene, or nylon. The filter can also be washed with an organic solvent in advance. In the filter filtering step, a plurality of filters can be connected in series or in parallel for use. When multiple filters are used, filters with different pore sizes and/or materials can also be used in combination. In addition, various materials may be filtered multiple times, and the multiple filtering steps may also be cyclic filtering steps. In addition, filtration may be performed by pressurization, and the pressure of pressurization is preferably 0.05 MPa or more and 0.3 MPa or less. In addition to filtration using a filter, an adsorption material may be used to remove impurities, or a combination of filter filtration and an adsorption material may be used. As the adsorbent, a known adsorbent can be used, and for example, an inorganic adsorbent such as silica gel and zeolite, and an organic adsorbent such as activated carbon can be used.

<乾燥步驟> 本發明的積層體的製造方法亦可包括於形成感光性樹脂組成物層後對溶劑進行乾燥的步驟。較佳的乾燥溫度為50℃~150℃,更佳為70℃~130℃,進而佳為90℃~110℃。作為乾燥時間,可例示30秒~20分鐘,更佳為1分鐘~10分鐘,進而佳為3分鐘~7分鐘。<Drying step> The manufacturing method of the laminated body of this invention may include the process of drying a solvent after forming the photosensitive resin composition layer. The preferable drying temperature is 50°C to 150°C, more preferably 70°C to 130°C, and still more preferably 90°C to 110°C. As a drying time, 30 second - 20 minutes can be illustrated, More preferably, it is 1 minute - 10 minutes, More preferably, it is 3 minutes - 7 minutes.

<曝光步驟> 本發明的積層體的製造方法包括對所述感光性樹脂組成物層進行曝光的曝光步驟。曝光只要可將感光性樹脂組成物硬化則並無特別限定,例如以波長365 nm下的曝光能量換算計,較佳為照射100 mJ/cm2 ~10,000 mJ/cm2 ,更佳為照射200 mJ/cm2 ~8000 mJ/cm2 。 曝光波長可以190 nm~1000 nm的範圍而適當確定,較佳為240 nm~550 nm。<Exposure process> The manufacturing method of the laminated body of this invention includes the exposure process which exposes the said photosensitive resin composition layer. The exposure is not particularly limited as long as the photosensitive resin composition can be cured. For example, in terms of exposure energy at a wavelength of 365 nm, the exposure is preferably 100 mJ/cm 2 to 10,000 mJ/cm 2 , more preferably 200 mJ. /cm 2 ~8000 mJ/cm 2 . The exposure wavelength can be appropriately determined in the range of 190 nm to 1000 nm, and is preferably 240 nm to 550 nm.

<顯影處理步驟> 本發明的積層體的製造方法包括對經曝光的感光性樹脂組成物層進行負型顯影處理的顯影處理步驟。藉由進行負型顯影而將未曝光的部分(非曝光部)去除。顯影是使用顯影液來進行。顯影液只要是可將未曝光的部分(非曝光部)去除者,則可無特別限制地使用。溶劑較佳為:作為酯類,例如可適宜地列舉乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等,以及,作為醚類,例如可適宜地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等,以及,作為酮類,例如可適宜地列舉甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等,以及,作為芳香族烴類,例如可適宜地列舉甲苯、二甲苯、大茴香醚、檸檬烯等,以及,作為亞碸類,可適宜地列舉二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯。其中,較佳為3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯,更佳為環戊酮、γ-丁內酯。 作為顯影時間,較佳為10秒~5分鐘。顯影時的溫度並無特別限定,通常可於20℃~40℃下進行。 於使用顯影液的處理之後,進而亦可進行淋洗。淋洗較佳為藉由與顯影液不同的溶劑來進行。例如可使用感光性樹脂組成物中所含的溶劑來進行淋洗。淋洗時間較佳為5秒~1分鐘。<Development process step> The manufacturing method of the layered product of the present invention includes a development treatment step of subjecting the exposed photosensitive resin composition layer to a negative development treatment. Unexposed parts (non-exposed parts) are removed by performing negative development. The development is performed using a developer. The developing solution can be used without particular limitation as long as it can remove the unexposed part (non-exposed part). The solvent is preferably: as esters, for example, ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, butyl acetate, etc. ethyl acetate, butyl butyrate, methyl lactate, ethyl lactate, gamma-butyrolactone, ε-caprolactone, delta-valerolactone, alkyl alkoxyacetates (e.g. methyl alkoxyacetate) , ethyl alkoxyacetate, butyl alkoxyacetate (such as methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate etc.)), 3-alkoxy propionate alkyl esters (such as 3-alkoxy propionate methyl ester, 3-alkoxy ethyl propionate, etc. (such as 3-methoxy propionate methyl ester, 3 -Ethyl methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), 2-alkoxypropionate alkyl esters (such as 2-alkoxypropionate) Methyl propionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (e.g. methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methylpropionate propyl oxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkoxy-2-methylpropionate and 2-alkoxy- Ethyl 2-methylpropionate (such as methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate Esters, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc., and as ethers, for example, two Ethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethyl Glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc., and, as ketones, for example Preferable examples include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, and the like, and as the aromatic hydrocarbons, for example, suitable Toluene, xylene, anisole, limonene, etc. are listed, and as the sulfites, dimethylsulfite, ethyl carbitol acetate, and butyl carbitol acetate can be suitably used. Among them, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, Methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethylsulfoxide, ethyl carbitol acetate, ethyl butyl carbitol acid ester, propylene glycol methyl ether, and propylene glycol methyl ether acetate, more preferably cyclopentanone and γ-butyrolactone. The development time is preferably 10 seconds to 5 minutes. The temperature at the time of image development is not specifically limited, Usually, it can carry out at 20 degreeC - 40 degreeC. After the treatment using the developer, further rinsing may be performed. Rinse is preferably performed with a solvent different from that of the developer. For example, rinsing can be performed using the solvent contained in the photosensitive resin composition. The rinsing time is preferably 5 seconds to 1 minute.

<加熱步驟> 本發明的積層體的製造方法較佳為包括加熱步驟。加熱步驟中,進行聚醯亞胺前驅物及聚苯并噁唑前驅物的環化反應。當與交聯劑一起進行加熱時,聚醯亞胺或聚苯并噁唑中形成三維網路結構。另外,亦進行未反應的自由基聚合性化合物的硬化等。作為最高加熱溫度,較佳為100℃~500℃,更佳為140℃~400℃,進而佳為160℃~350℃。 加熱較佳為自20℃~150℃的溫度至最高加熱溫度是以1℃/分鐘~12℃/分鐘的升溫速度來進行,更佳為2℃/分鐘~10℃/分鐘,進而佳為3℃/分鐘~10℃/分鐘。藉由將升溫速度設為1℃/分鐘以上,可確保生產性並且防止胺的過度揮發,藉由將升溫速度設為12℃/分鐘以下,可緩和硬化膜的殘存應力。 加熱開始時的溫度較佳為20℃~150℃,更佳為20℃~130℃,進而佳為25℃~120℃。加熱開始時的溫度是指開始進行加熱至最高加熱溫度的步驟時的溫度。例如,當將感光性樹脂組成物應用於基板上後使其乾燥時,是指該乾燥後的溫度,例如較佳為自較感光性樹脂組成物中所含的溶劑的沸點低30℃~200℃的溫度起緩緩升溫。 關於加熱,於到達最高加熱溫度後,較佳為進行10分鐘~360分鐘加熱,進而佳為進行20分鐘~300分鐘加熱,特佳為進行30分鐘~240分鐘加熱。<Heating step> It is preferable that the manufacturing method of the laminated body of this invention includes a heating process. In the heating step, a cyclization reaction of the polyimide precursor and the polybenzoxazole precursor is performed. When heated with a crosslinking agent, a three-dimensional network structure is formed in the polyimide or polybenzoxazole. Moreover, hardening etc. of the unreacted radically polymerizable compound are also performed. The maximum heating temperature is preferably 100°C to 500°C, more preferably 140°C to 400°C, and still more preferably 160°C to 350°C. Heating is preferably carried out from a temperature of 20°C to 150°C to a maximum heating temperature at a temperature increase rate of 1°C/min to 12°C/min, more preferably 2°C/min to 10°C/min, further preferably 3 °C/min to 10 °C/min. By setting the temperature increase rate to be 1°C/min or more, productivity can be ensured and excessive volatilization of the amine can be prevented, and by setting the temperature increase rate to be 12°C/min or less, the residual stress of the cured film can be relieved. The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, further preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at which the step of heating to the maximum heating temperature is started. For example, when the photosensitive resin composition is applied to a substrate and then dried, it refers to the temperature after drying, and is preferably 30° C. to 200° C. lower than the boiling point of the solvent contained in the photosensitive resin composition, for example. ℃ temperature gradually increased. About heating, after reaching the maximum heating temperature, heating is preferably performed for 10 minutes to 360 minutes, more preferably heating for 20 minutes to 300 minutes, and particularly preferably heating for 30 minutes to 240 minutes.

加熱亦可階段性進行。作為一例,可列舉如下步驟,即自25℃起以3℃/分鐘升溫至180℃,並於180℃下放置60分鐘,然後自180℃起以2℃/分鐘升溫至200℃,並於200℃下放置120分鐘。 進而,亦可於加熱後進行冷卻,作為此時的冷卻速度,較佳為1℃/分鐘~5℃/分鐘。Heating can also be performed in stages. As an example, the following steps can be mentioned: the temperature is raised from 25°C to 180°C at 3°C/min, left at 180°C for 60 minutes, then the temperature is raised from 180°C to 200°C at 2°C/min, and the temperature is increased to 200°C at 200°C. 120 minutes at ℃. Further, cooling may be performed after heating, and the cooling rate at this time is preferably 1°C/min to 5°C/min.

就防止聚醯亞胺前驅物等的分解的方面而言,加熱步驟較佳為藉由流動氮、氦、氬等惰性氣體等而於氧濃度低的環境下進行。氧濃度較佳為50 ppm(v/v)以下,更佳為20 ppm(v/v)以下。From the viewpoint of preventing decomposition of the polyimide precursor and the like, the heating step is preferably performed in an environment with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, and argon. The oxygen concentration is preferably 50 ppm (v/v) or less, more preferably 20 ppm (v/v) or less.

<<金屬層形成步驟>> 本發明的積層體的製造方法較佳為包括於顯影處理後的感光性樹脂組成物層的表面形成金屬層的金屬層形成步驟。 作為金屬層,並無特別限定,可使用已有的金屬種,可例示銅、鋁、鎳、釩、鈦、鉻、鈷、金及鎢,更佳為銅及鋁,進而佳為銅。 金屬層的形成方法並無特別限定,可應用已有的方法。例如可使用日本專利特開2007-157879號公報、日本專利特表2001-521288號公報、日本專利特開2004-214501號公報、日本專利特開2004-101850號公報中所記載的方法。例如可考慮光微影、舉離(lift-off)、電鍍、無電鍍、蝕刻、印刷及將該些組合的方法等。更具體而言,可列舉將濺鍍、光微影及蝕刻組合的圖案化方法;將光微影與電鍍組合的圖案化方法。 作為金屬層的厚度,以最厚的部分計,較佳為0.1 μm~50 μm,更佳為1 μm~10 μm。<<Metal Layer Formation Step>> It is preferable that the manufacturing method of the laminated body of this invention includes the metal layer formation process of forming a metal layer on the surface of the photosensitive resin composition layer after image development processing. The metal layer is not particularly limited, and existing metal species can be used, and examples thereof include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, and tungsten, more preferably copper and aluminum, and still more preferably copper. The method of forming the metal layer is not particularly limited, and an existing method can be applied. For example, the methods described in JP 2007-157879 A, JP 2001-521288 A, JP 2004-214501 A, and JP 2004-101850 A can be used. For example, photolithography, lift-off, electroplating, electroless plating, etching, printing, methods of combining these, and the like are contemplated. More specifically, a patterning method combining sputtering, photolithography, and etching, and a patterning method combining photolithography and electroplating are exemplified. The thickness of the metal layer is preferably from 0.1 μm to 50 μm, more preferably from 1 μm to 10 μm, at the thickest part.

<表面活性化處理步驟> 本發明的積層體的製造方法包括對所述金屬層及感光性樹脂組成物層的至少一部分進行表面活性化處理的表面活性化處理步驟。 表面活性化處理步驟通常是於金屬層形成步驟之後進行,亦可於在所述曝光顯影步驟之後,對感光性樹脂組成物層進行表面活性化處理步驟後進行金屬層形成步驟。 表面活性化處理可僅對金屬層的至少一部分進行,亦可僅對曝光後的感光性樹脂組成物層的至少一部分進行,亦可對金屬層及曝光後的感光性樹脂組成物層兩者各自的至少一部分進行。表面活性化處理較佳為是對金屬層的至少一部分進行,更佳為是對金屬層中,於表面形成感光性樹脂組成物層的區域的一部分或全部進行表面活性化處理。如此,藉由對金屬層的表面進行表面活性化處理,可提升與設置於其表面的樹脂層的密著性。 另外,較佳為亦對曝光後的感光性樹脂組成物層(樹脂層)的一部分或全部進行表面活性化處理。如此,藉由對感光性樹脂組成物層的表面進行表面活性化處理,可提升與設置於經表面活性化處理的表面的金屬層或樹脂層的密著性。尤其是當進行正型顯影時,使未曝光部接受表面活性化處理,感光性樹脂組成物層(樹脂層)容易受損,而導致密著性的降低。本發明中,由於進行負型顯影,故使曝光部接受表面處理,且藉由硬化等而膜的強度提高,因而感光性樹脂組成物層(樹脂層)不會受損,不存在該問題。 作為表面活性化處理,具體而言,可選自各種原料氣體(氧、氫、氬、氮、氮/氫混合氣體、氬/氧混合氣體等)的電漿處理;電暈放電處理;藉由CF4 /O2 、NF3 /O2 、SF6 、NF3 、NF3 /O2 進行的蝕刻處理;藉由紫外線(UV)臭氧法進行的表面處理;於浸漬於鹽酸水溶液而將氧化皮膜去除後,浸漬於包含具有胺基與硫醇基的至少一種的化合物的有機表面處理劑中的浸漬處理;使用刷子的機械粗面化處理中,較佳為電漿處理,尤其較佳為原料氣體中使用了氧的氧電漿處理。於電暈放電處理的情況下,能量較佳為500 J/m2 ~200,000 J/m2 ,更佳為1000 J/m2 ~100,000 J/m2 ,最佳為10,000 J/m2 ~50,000 J/m2<Surface activation treatment step> The manufacturing method of the layered product of the present invention includes a surface activation treatment step of subjecting at least a part of the metal layer and the photosensitive resin composition layer to a surface activation treatment. The surface activation treatment step is usually performed after the metal layer formation step, and the metal layer formation step may be performed after the surface activation treatment step for the photosensitive resin composition layer after the exposure and development step. The surface activation treatment may be performed only on at least a part of the metal layer, only on at least a part of the photosensitive resin composition layer after exposure, or on both the metal layer and the photosensitive resin composition layer after exposure. at least part of it. The surface activation treatment is preferably performed on at least a part of the metal layer, and more preferably, a surface activation treatment is performed on a part or all of a region of the metal layer in which the photosensitive resin composition layer is formed on the surface. In this way, by performing the surface activation treatment on the surface of the metal layer, the adhesiveness with the resin layer provided on the surface can be improved. Moreover, it is preferable to also perform a surface activation process with respect to a part or all of the photosensitive resin composition layer (resin layer) after exposure. In this way, by performing the surface activation treatment on the surface of the photosensitive resin composition layer, the adhesion to the metal layer or resin layer provided on the surface activation treatment surface can be improved. In particular, when positive-type development is performed, the unexposed portion is subjected to surface activation treatment, and the photosensitive resin composition layer (resin layer) is easily damaged, resulting in a decrease in adhesiveness. In the present invention, since the negative tone development is performed, the exposed portion is subjected to surface treatment, and the strength of the film is improved by curing or the like, so that the photosensitive resin composition layer (resin layer) is not damaged, and this problem does not exist. Specifically, the surface activation treatment can be selected from plasma treatment of various raw material gases (oxygen, hydrogen, argon, nitrogen, nitrogen/hydrogen mixed gas, argon/oxygen mixed gas, etc.); corona discharge treatment; Etching treatment by CF 4 /O 2 , NF 3 /O 2 , SF 6 , NF 3 , NF 3 /O 2 ; Surface treatment by ultraviolet (UV) ozone method; After removal, immersion treatment in an organic surface treatment agent containing at least one compound of an amine group and a thiol group; in the mechanical roughening treatment using a brush, plasma treatment is preferred, and a raw material is particularly preferred Oxygen plasma treatment using oxygen in the gas. In the case of corona discharge treatment, the energy is preferably 500 J/m 2 to 200,000 J/m 2 , more preferably 1000 J/m 2 to 100,000 J/m 2 , and most preferably 10,000 J/m 2 to 50,000 J/m 2 .

<積層步驟> 本發明的製造方法更包括以下積層步驟。 所謂積層步驟,是包括再次依下述順序進行所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟的一連串步驟。即,於積層步驟中,當然亦可更包括所述乾燥步驟或加熱步驟等。 當於積層步驟後進而進行積層步驟時,較佳為於所述曝光步驟後、或所述金屬層形成步驟後進而進行所述表面活性化處理步驟。 所述積層步驟較佳為進行3次~7次,更佳為進行3次~5次。 例如,較佳為如樹脂層/金屬層/樹脂層/金屬層/樹脂層/金屬層般的樹脂層為3層以上且7層以下的構成,進而佳為3層以下且5層以下。若為兩層以下,則有時即便未進行氧電漿處理等亦充分地密著,而越為多層構成,則越反覆暴露於顯影液或金屬蝕刻處理、固化的高溫處理,故變得容易於金屬層/樹脂層界面或樹脂層/樹脂層界面產生剝落。 藉由設為此種構成,可交替積層感光性樹脂組成物層(樹脂層)與金屬層,可用作半導體的多層配線結構。<Lamination step> The manufacturing method of the present invention further includes the following lamination steps. The lamination step is a series of steps including the step of forming the photosensitive resin composition layer, the exposure step, and the development treatment step in the following order again. That is, in the lamination step, of course, the drying step, the heating step, and the like may be further included. When the lamination process is performed after the lamination process, the surface activation treatment process is preferably performed after the exposure process or after the metal layer formation process. The lamination step is preferably performed 3 to 7 times, more preferably 3 to 5 times. For example, resin layers such as resin layer/metal layer/resin layer/metal layer/resin layer/metal layer are preferably composed of 3 or more and 7 or less layers, and more preferably 3 or less and 5 or less layers. If it is two or less layers, it may be sufficiently adhered even without oxygen plasma treatment or the like, and the more the multilayer structure is, the more repeated exposure to developing solution, metal etching treatment, and high-temperature treatment of curing becomes easier. Peeling occurs at the metal layer/resin layer interface or the resin layer/resin layer interface. By setting it as such a structure, a photosensitive resin composition layer (resin layer) and a metal layer can be laminated|stacked alternately, and it can be used as a multilayer wiring structure of a semiconductor.

<感光性樹脂組成物> 本發明中使用的感光性樹脂組成物(以下,有時稱為「本發明中使用的組成物」)包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的樹脂(以下,有時稱為「聚醯亞胺前驅物」),較佳為包含聚醯亞胺前驅物或聚苯并噁唑前驅物,更佳為包含聚醯亞胺前驅物。 進而,滿足聚醯亞胺前驅物等樹脂包含聚合性基、及所述感光性樹脂組成物包含聚合性化合物的至少一者。尤其,較佳為聚醯亞胺前驅物等樹脂包含聚合性基,且所述感光性樹脂組成物包含聚合性化合物。藉由設為此種構成,於曝光部形成三維網路而成為牢固的交聯膜,感光性樹脂組成物層(樹脂層)不會藉由表面活性化處理而受損,藉由表面活性化處理而密著性更有效地提升。 進而,聚醯亞胺前驅物等樹脂較佳為包含由-Ar-L-Ar-所表示的部分結構。其中,Ar分別獨立地為芳香族基,L為包含可經氟原子取代的碳數1~10的脂肪族烴基(較佳為伸烷基)、-O-、-CO-、-S-、-SO2 -或-NHCO-、或者所述的兩個以上的組合的基。藉由設為此種構成,樹脂層成為柔軟的結構,可更有效地發揮抑制剝落的產生的效果。Ar較佳為伸苯基,L較佳為可經氟原子取代的碳數1或2的脂肪族烴基、-O-、-CO-、-S-或-SO2 -。 以下,對本發明中使用的感光性樹脂組成物的詳細情況進行說明。<Photosensitive resin composition> The photosensitive resin composition used in the present invention (hereinafter, sometimes referred to as "the composition used in the present invention") contains a polyimide precursor selected from the group consisting of polyimide precursors, polyimide, polyimide Resin in benzoxazole precursor and polybenzoxazole (hereinafter, sometimes referred to as "polyimide precursor"), preferably including polyimide precursor or polybenzoxazole precursor , more preferably including a polyimide precursor. Furthermore, it satisfies that resin such as a polyimide precursor contains a polymerizable group, and the photosensitive resin composition contains at least one of a polymerizable compound. In particular, it is preferable that a resin such as a polyimide precursor contains a polymerizable group, and the photosensitive resin composition contains a polymerizable compound. By setting it as such a structure, a three-dimensional network is formed in the exposure part to form a strong cross-linked film, and the photosensitive resin composition layer (resin layer) is not damaged by the surface activation treatment, and the surface activation Handling and adhesion are improved more effectively. Furthermore, it is preferable that resins, such as a polyimide precursor, contain the partial structure represented by -Ar-L-Ar-. Wherein, Ar is each independently an aromatic group, and L is an aliphatic hydrocarbon group (preferably an alkylene group) containing 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, A group of -SO 2 - or -NHCO-, or a combination of two or more of the above. By setting it as such a structure, a resin layer becomes a soft structure, and the effect of suppressing generation|occurrence|production of peeling can be exhibited more effectively. Ar is preferably a phenylene group, and L is preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms, -O-, -CO-, -S- or -SO 2 - which may be substituted by a fluorine atom. Hereinafter, the details of the photosensitive resin composition used in the present invention will be described.

<<聚醯亞胺前驅物>> 本發明中使用的聚醯亞胺前驅物的種類等並無特別限定,較佳為包含由下述式(2)所表示的重複單元。 式(2) [化1]

Figure 02_image001
式(2)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示二價的有機基,R115 表示四價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基。<<Polyimide Precursor>> The type and the like of the polyimide precursor used in the present invention are not particularly limited, but it is preferable to include a repeating unit represented by the following formula (2). Formula (2) [Chemical 1]
Figure 02_image001
In formula (2), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or Monovalent organic group.

式(2)中的A1 及A2 分別獨立地表示氧原子或NH,較佳為氧原子。 式(2)中的R111 表示二價的有機基。作為二價的有機基,可例示包含直鏈或分支的脂肪族基、環狀的脂肪族基及芳香族基的基,較佳為包含碳數2~20的直鏈或分支的脂肪族基、碳數6~20的環狀的脂肪族基、碳數6~20的芳香族基或該些的組合的基,更佳為包含碳數6~60的芳香族基的基。作為本發明的特佳的實施形態,可例示由-Ar-L-Ar-所表示的基。其中,Ar分別獨立地為芳香族基,L為包含可經氟原子取代的碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -或-NHCO-、或者所述的兩個以上的組合的基。該些的較佳範圍如上所述。A 1 and A 2 in formula (2) each independently represent an oxygen atom or NH, preferably an oxygen atom. R 111 in formula (2) represents a divalent organic group. As the divalent organic group, a group including a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group can be exemplified, and a linear or branched aliphatic group having 2 to 20 carbon atoms is preferred. , a cyclic aliphatic group having 6 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a combination thereof, more preferably a group containing an aromatic group having 6 to 60 carbon atoms. As a particularly preferred embodiment of the present invention, a group represented by -Ar-L-Ar- can be exemplified. Wherein, Ar is each independently an aromatic group, and L is an aliphatic hydrocarbon group containing 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 - or -NHCO- , or the combination of two or more of the above. The preferred ranges of these are as described above.

R111 較佳為衍生自二胺。作為聚醯亞胺前驅物的製造中所使用的二胺,可列舉:直鏈或分支的脂肪族、環狀的脂肪族或芳香族二胺等。二胺可僅使用一種,亦可使用兩種以上。 具體而言,較佳為含有包含碳數2~20的直鏈或分支的脂肪族基、碳數6~20的環狀的脂肪族基、碳數6~20的芳香族基或該些的組合的基的二胺,更佳為含有包含碳數6~60的芳香族基的基的二胺。作為芳香族基的例子,可列舉下述。R 111 is preferably derived from a diamine. As a diamine used for manufacture of a polyimide precursor, a linear or branched aliphatic, cyclic aliphatic or aromatic diamine etc. are mentioned. Only one type of diamine may be used, or two or more types may be used. Specifically, it is preferable to contain a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 6 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a combination thereof. The diamine of the combined group is more preferably a diamine containing a group containing an aromatic group having 6 to 60 carbon atoms. As an example of an aromatic group, the following are mentioned.

[化2]

Figure 02_image002
式中,A較佳為單鍵、或選自可經氟原子取代的碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -及-NHCO-、以及該些的組合中的基,更佳為單鍵、選自可經氟原子取代的碳數1~3的伸烷基、-O-、-C(=O)-、-S-、-SO2 -中的基,進而佳為選自由-CH2 -、-O-、-S-、-SO2 -、-C(CF3 )2 -及-C(CH3 )2 -所組成的群組中的二價的基。[hua 2]
Figure 02_image002
In the formula, A is preferably a single bond, or selected from aliphatic hydrocarbon groups having 1 to 10 carbon atoms that can be substituted by fluorine atoms, -O-, -C(=O)-, -S-, -S(=O ) 2 - and -NHCO-, and the group in the combination of these, more preferably a single bond, selected from alkylene groups having 1 to 3 carbon atoms which may be substituted by fluorine atoms, -O-, -C(=O )-, -S-, -SO 2 -, and preferably selected from -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 - and -C( CH 3 ) 2 - a divalent radical in the group consisting of.

作為二胺,具體而言,可列舉選自以下中的至少一種二胺:1,2-二胺基乙烷、1,2-二胺基丙烷、1,3-二胺基丙烷、1,4-二胺基丁烷及1,6-二胺基己烷;1,2-二胺基環戊烷或1,3-二胺基環戊烷、1,2-二胺基環己烷、1,3-二胺基環己烷或1,4-二胺基環己烷、1,2-雙(胺基甲基)環己烷、1,3-雙(胺基甲基)環己烷或1,4-雙(胺基甲基)環己烷、雙-(4-胺基環己基)甲烷、雙-(3-胺基環己基)甲烷、4,4'-二胺基-3,3'-二甲基環己基甲烷及異佛爾酮二胺;間苯二胺或對苯二胺、二胺基甲苯、4,4'-二胺基聯苯或3,3'-二胺基聯苯、4,4'-二胺基二苯基醚、3,3-二胺基二苯基醚、4,4'-二胺基二苯基甲烷及3,3'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸及3,3'-二胺基二苯基碸、4,4'-二胺基二苯硫醚及3,3'-二胺基二苯硫醚、4,4'-二胺基二苯甲酮或3,3'-二胺基二苯甲酮、3,3'-二甲基-4,4'-二胺基聯苯、2,2'-二甲基-4,4'-二胺基聯苯、3,3'-二甲氧基-4,4'-二胺基聯苯、2,2-雙(4-胺基苯基)丙烷、2,2-雙(4-胺基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、4,4'-二胺基對聯三苯、4,4'-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(2-胺基苯氧基)苯基]碸、1,4-雙(4-胺基苯氧基)苯、9,10-雙(4-胺基苯基)蒽、3,3'-二甲基-4,4'-二胺基二苯基碸、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯基)苯、3,3'-二乙基-4,4'-二胺基二苯基甲烷、3,3'-二甲基-4,4'-二胺基二苯基甲烷、4,4'-二胺基八氟聯苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、9,9-雙(4-胺基苯基)-10-氫蒽、3,3',4,4'-四胺基聯苯、3,3',4,4'-四胺基二苯基醚、1,4-二胺基蒽醌、1,5-二胺基蒽醌、3,3-二羥基-4,4'-二胺基聯苯、9,9'-雙(4-胺基苯基)茀、4,4'-二甲基-3,3'-二胺基二苯基碸、3,3',5,5'-四甲基-4,4'-二胺基二苯基甲烷、2,4-二胺基枯烯及2,5-二胺基枯烯、2,5-二甲基-對苯二胺、乙醯胍胺、2,3,5,6-四甲基-對苯二胺、2,4,6-三甲基-間苯二胺、雙(3-胺基丙基)四甲基二矽氧烷、2,7-二胺基茀、2,5-二胺基吡啶、1,2-雙(4-胺基苯基)乙烷、二胺基苯甲醯苯胺、二胺基苯甲酸的酯、1,5-二胺基萘、二胺基三氟甲苯、1,3-雙(4-胺基苯基)六氟丙烷、1,4-雙(4-胺基苯基)八氟丁烷、1,5-雙(4-胺基苯基)十氟戊烷、1,7-雙(4-胺基苯基)十四氟庚烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(2-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-雙(三氟甲基)苯基]六氟丙烷、對雙(4-胺基-2-三氟甲基苯氧基)苯、4,4'-雙(4-胺基-2-三氟甲基苯氧基)聯苯、4,4'-雙(4-胺基-3-三氟甲基苯氧基)聯苯、4,4'-雙(4-胺基-2-三氟甲基苯氧基)二苯基碸、4,4'-雙(3-胺基-5-三氟甲基苯氧基)二苯基碸、2,2-雙[4-(4-胺基-3-三氟甲基苯氧基)苯基]六氟丙烷、3,3',5,5'-四甲基-4,4'-二胺基聯苯、4,4'-二胺基-2,2'-雙(三氟甲基)聯苯、2,2',5,5',6,6'-六氟聯甲苯胺及4,4'-二胺基四聯苯。Specifically, as the diamine, at least one diamine selected from the group consisting of 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,2-diaminopropane, 4-Diaminobutane and 1,6-diaminohexane; 1,2-diaminocyclopentane or 1,3-diaminocyclopentane, 1,2-diaminocyclohexane , 1,3-diaminocyclohexane or 1,4-diaminocyclohexane, 1,2-bis(aminomethyl)cyclohexane, 1,3-bis(aminomethyl)cyclohexane Hexane or 1,4-bis(aminomethyl)cyclohexane, bis-(4-aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4'-diamino -3,3'-Dimethylcyclohexylmethane and isophoronediamine; m- or p-phenylenediamine, diaminotoluene, 4,4'-diaminobiphenyl or 3,3' -Diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane and 3,3'- Diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide and 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide and 3,3 '-diaminodiphenyl sulfide, 4,4'-diaminobenzophenone or 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'- Diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2 -Bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2 2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4 -Hydroxyphenyl) hexafluoropropane, bis(3-amino-4-hydroxyphenyl) bis(4-amino-3-hydroxyphenyl) bis(4-amino-3-hydroxyphenyl) bis(4-amino-3-hydroxyphenyl), 4,4'-diamino-terphenyl , 4,4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl] bis[4-(3-aminophenoxy) Phenyl] benzene, bis[4-(2-aminophenoxy)phenyl] benzene, 1,4-bis(4-aminophenoxy)benzene, 9,10-bis(4-aminobenzene) base) anthracene, 3,3'-dimethyl-4,4'-diaminodiphenylene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3- Aminophenoxy)benzene, 1,3-bis(4-aminophenyl)benzene, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3'- Dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis[4-(4-aminophenoxy)phenyl] Propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 9,9-bis(4-aminophenyl)-10-hydroanthracene, 3,3', 4,4'-tetraaminobiphenyl, 3,3',4,4'-tetraaminodiphenyl ether, 1,4-diaminoanthraquinone, 1,5-diaminoanthraquinone, 3 ,3-Dihydroxy-4,4'-diamine Biphenyl, 9,9'-bis(4-aminophenyl) phenyl, 4,4'-dimethyl-3,3'-diaminodiphenyl, 3,3',5,5 '-Tetramethyl-4,4'-diaminodiphenylmethane, 2,4-diaminocumene and 2,5-diaminocumene, 2,5-dimethyl-p-phenylenedi Amine, acetoguanamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,4,6-trimethyl-m-phenylenediamine, bis(3-aminopropyl)tetramethyl disiloxane, 2,7-diaminophenanyl, 2,5-diaminopyridine, 1,2-bis(4-aminophenyl)ethane, diaminobenzylaniline, diamine Esters of benzoic acid, 1,5-diaminonaphthalene, diaminotrifluorotoluene, 1,3-bis(4-aminophenyl)hexafluoropropane, 1,4-bis(4-aminobenzene) base) octafluorobutane, 1,5-bis(4-aminophenyl)decafluoropentane, 1,7-bis(4-aminophenyl)tetrafluoroheptane, 2,2-bis[ 4-(3-Aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(2-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4- (4-Aminophenoxy)-3,5-dimethylphenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-bis(trifluoropropane) Methyl)phenyl]hexafluoropropane, p-bis(4-amino-2-trifluoromethylphenoxy)benzene, 4,4'-bis(4-amino-2-trifluoromethylphenoxy) base) biphenyl, 4,4'-bis(4-amino-3-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-2-trifluoromethylphenoxy) base) diphenyl bismuth, 4,4'-bis(3-amino-5-trifluoromethylphenoxy) diphenyl bismuth, 2,2-bis[4-(4-amino-3- Trifluoromethylphenoxy)phenyl]hexafluoropropane, 3,3',5,5'-tetramethyl-4,4'-diaminobiphenyl, 4,4'-diamino-2 , 2'-bis(trifluoromethyl)biphenyl, 2,2',5,5',6,6'-hexafluorobenzidine and 4,4'-diaminotetraphenyl.

另外,下述所示的二胺(DA-1)~二胺(DA-18)亦較佳。Moreover, the diamine (DA-1) - diamine (DA-18) shown below are also preferable.

[化3]

Figure 02_image003
[hua 3]
Figure 02_image003

[化4]

Figure 02_image004
[hua 4]
Figure 02_image004

另外,亦可列舉於主鏈具有至少兩個以上的烷二醇單元的二胺作為較佳的例子。較佳為一分子中一併包含兩個以上的乙二醇鏈、丙二醇鏈的任一者或兩者的二胺,更佳為不包含芳香環的二胺。作為具體例,可列舉吉夫胺(Jeffamine)(註冊商標)KH-511、吉夫胺(Jeffamine)(註冊商標)ED-600、吉夫胺(Jeffamine)(註冊商標)ED-900、吉夫胺(Jeffamine)(註冊商標)ED-2003、吉夫胺(Jeffamine)(註冊商標)EDR-148、吉夫胺(Jeffamine)(註冊商標)EDR-176、D-200、D-400、D-2000、D-4000(以上為商品名,亨斯邁(HUNTSMAN)(股份)製造)、1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺等,但並不限定於該些具體例。 將吉夫胺(Jeffamine)(註冊商標)KH-511、吉夫胺(Jeffamine)(註冊商標)ED-600、吉夫胺(Jeffamine)(註冊商標)ED-900、吉夫胺(Jeffamine)(註冊商標)ED-2003、吉夫胺(Jeffamine)(註冊商標)EDR-148、吉夫胺(Jeffamine)(註冊商標)EDR-176的結構示於以下。Moreover, the diamine which has at least two or more alkanediol units in a main chain can also be mentioned as a preferable example. A diamine containing either or both of two or more ethylene glycol chains and propylene glycol chains in one molecule is preferable, and a diamine not containing an aromatic ring is more preferable. Specific examples include Jeffamine (registered trademark) KH-511, Jeffamine (registered trademark) ED-600, Jeffamine (registered trademark) ED-900, and Jeffamine (registered trademark) ED-2003, Jeffamine (registered trademark) EDR-148, Jeffamine (registered trademark) EDR-176, D-200, D-400, D-2000, D-4000 ( The above are trade names, Huntsman (HUNTSMAN) Co., Ltd.), 1-(2-(2-(2-aminopropoxy)ethoxy)propoxy)propane-2-amine, 1- (1-(1-(2-aminopropoxy)propan-2-yl)oxy)propan-2-amine and the like, but are not limited to these specific examples. Jeffamine (registered trademark) KH-511, Jeffamine (registered trademark) ED-600, Jeffamine (registered trademark) ED-900, Jeffamine (registered trademark) ED -2003 The structures of Jeffamine (registered trademark) EDR-148 and Jeffamine (registered trademark) EDR-176 are shown below.

[化5]

Figure 02_image005
[hua 5]
Figure 02_image005

於上述中,x、y、z為平均值。In the above, x, y, and z are mean values.

就所獲得的硬化膜的柔軟性的觀點而言,R111 較佳為由-Ar-L-Ar-表示。其中,Ar分別獨立地為芳香族基,L為包含可經氟原子取代的碳數1~10的脂肪族烴基(較佳為伸烷基)、-O-、-CO-、-S-、-SO2 -或-NHCO-、或者所述的兩個以上的組合的基。Ar較佳為伸苯基,L進而佳為可經氟原子取代的碳數1或2的脂肪族烴基、-O-、-CO-、-S-或-SO2 -。From the viewpoint of the flexibility of the obtained cured film, R 111 is preferably represented by -Ar-L-Ar-. Wherein, Ar is each independently an aromatic group, and L is an aliphatic hydrocarbon group (preferably an alkylene group) containing 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, A group of -SO 2 - or -NHCO-, or a combination of two or more of the above. Ar is preferably a phenylene group, and L is further preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms, -O-, -CO-, -S- or -SO 2 - which may be substituted by a fluorine atom.

另外,就i射線透射率的觀點而言,R111 較佳為由下述式(51)或式(61)所表示的二價的有機基。尤其是就i射線透射率、獲取的容易度的觀點而言,更佳為由式(61)所表示的二價的有機基。 式(51) [化6]

Figure 02_image006
(51) 式(51)中,R10 ~R17 分別獨立地為氫原子、氟原子或一價的有機基,R10 ~R17 的至少一個為氟原子、甲基或三氟甲基。 作為R10 ~R17 的一價的有機基,可列舉碳數1~10(較佳為碳數1~6)的未經取代的烷基、碳數1~10(較佳為碳數1~6)的氟化烷基等。 式(61) [化7]
Figure 02_image007
(61) 式(61)中,R18 及R19 分別獨立地為氟原子或三氟甲基。 作為具有式(51)或式(61)的結構的二胺化合物,可列舉2,2'-二甲基聯苯胺、2,2'-雙(三氟甲基)-4,4'-二胺基聯苯、2,2'-雙(氟)-4,4'-二胺基聯苯、4,4'-二胺基八氟聯苯等。該些可使用一種,亦可組合兩種以上而使用。In addition, from the viewpoint of i-ray transmittance, R 111 is preferably a divalent organic group represented by the following formula (51) or formula (61). In particular, from the viewpoints of i-ray transmittance and easiness of acquisition, a divalent organic group represented by formula (61) is more preferable. Formula (51) [Chem. 6]
Figure 02_image006
(51) In formula (51), R 10 to R 17 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 10 to R 17 is a fluorine atom, a methyl group or a trifluoromethyl group. Examples of the monovalent organic group of R 10 to R 17 include unsubstituted alkyl groups having 1 to 10 carbon atoms (preferably carbon atoms of 1 to 6), carbon atoms of 1 to 10 (preferably carbon atoms of 1). ~6) fluorinated alkyl groups, etc. Equation (61) [Chem. 7]
Figure 02_image007
(61) In formula (61), R 18 and R 19 are each independently a fluorine atom or a trifluoromethyl group. As the diamine compound having the structure of formula (51) or formula (61), 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4,4'-diamine can be mentioned Aminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc. One of these may be used, or two or more of them may be used in combination.

式(2)中的R115 表示四價的有機基。作為四價的有機基,較佳為包含芳香環的四價的有機基,更佳為由下述式(5)或式(6)所表示的基。 式(5) [化8]

Figure 02_image008
式(5)中,R112 較佳為單鍵、或選自可經氟原子取代的碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -及-NHCO-、以及該些的組合中的基,更佳為單鍵、選自可經氟原子取代的碳數1~3的伸烷基、-O-、-CO-、-S-及-SO2 -中的基,進而佳為選自由-CH2 -、-C(CF3 )2 -、-C(CH3 )2 -、-O-、-CO-、-S-及-SO2 -所組成的群組中的二價的基。R 115 in formula (2) represents a tetravalent organic group. The tetravalent organic group is preferably a tetravalent organic group containing an aromatic ring, and more preferably a group represented by the following formula (5) or (6). Formula (5) [Chemical 8]
Figure 02_image008
In formula (5), R 112 is preferably a single bond, or selected from aliphatic hydrocarbon groups having 1 to 10 carbon atoms which may be substituted by fluorine atoms, -O-, -CO-, -S-, -SO 2 - and -NHCO- and the group in the combination thereof, more preferably a single bond, selected from the group consisting of alkylene having 1 to 3 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S- and - The group in SO 2 - is more preferably selected from -CH 2 -, -C(CF 3 ) 2 -, -C(CH 3 ) 2 -, -O-, -CO-, -S- and -SO 2 - a bivalent base in the group formed.

式(6) [化9]

Figure 02_image009
Formula (6) [Chemical 9]
Figure 02_image009

R115 具體而言可列舉自四羧酸二酐中去除酐基後所殘存的四羧酸殘基等。四羧酸二酐可僅使用一種,亦可使用兩種以上。 四羧酸二酐較佳為由下述式(O)表示。 式(O) [化10]

Figure 02_image010
(O) 式(O)中,R115 表示四價的有機基。R115 與式(2)中的R115 為相同含義,較佳的範圍亦相同。Specific examples of R 115 include the tetracarboxylic acid residue remaining after removing the anhydride group from the tetracarboxylic dianhydride. Only one type of tetracarboxylic dianhydride may be used, or two or more types may be used. The tetracarboxylic dianhydride is preferably represented by the following formula (O). Formula (O) [Chemical 10]
Figure 02_image010
(O) In formula (O), R 115 represents a tetravalent organic group. R 115 has the same meaning as R 115 in formula (2), and the preferred range is also the same.

作為四羧酸二酐的具體例,可列舉:均苯四甲酸二酐(pyromellitic dianhydride,PMDA)、3,3',4,4'-聯苯四羧酸二酐、3,3',4,4'-二苯基硫醚四羧酸二酐、3,3',4,4'-二苯基碸四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-二苯基甲烷四羧酸二酐、2,2',3,3'-二苯基甲烷四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐、4,4'-氧基二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2',3,3'-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,3,4-苯四羧酸二酐以及該些的碳數1~6的烷基衍生物及碳數1~6的烷氧基衍生物。Specific examples of tetracarboxylic dianhydrides include pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3',4 ,4'-diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetra Carboxylic dianhydride, 3,3',4,4'-diphenylmethane tetracarboxylic dianhydride, 2,2',3,3'-diphenylmethane tetracarboxylic dianhydride, 2,3,3 ',4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2, 3,6,7-naphthalenetetracarboxylic dianhydride, 1,4,5,7-naphthalenetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2 -Bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3, 3,4,4-tetracarboxylic dianhydride, 1,4,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3,4, 9,10-Perylenetetracarboxylic dianhydride, 1,2,4,5-Naphthalenetetracarboxylic dianhydride, 1,4,5,8-Naphthalenetetracarboxylic dianhydride, 1,8,9,10-Phenanthrene Tetracarboxylic dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethanedianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethanedianhydride, 1,2, 3,4-benzenetetracarboxylic dianhydride, and these alkyl derivatives having 1 to 6 carbon atoms and alkoxy derivatives having 1 to 6 carbon atoms.

另外,亦可列舉下述所示的四羧酸二酐(DAA-1)~(DAA-5)作為較佳的例子。 [化11]

Figure 02_image011
Moreover, the tetracarboxylic dianhydride (DAA-1)-(DAA-5) shown below can also be mentioned as a preferable example. [Chemical 11]
Figure 02_image011

另外,亦較佳為R111 與R115 的至少一者具有OH基。更具體而言,作為R111 ,可列舉雙胺基苯酚衍生物的殘基。Moreover, it is also preferable that at least one of R 111 and R 115 has an OH group. More specifically, as R 111 , a residue of a bisaminophenol derivative can be mentioned.

R113 及R114 分別獨立地表示氫原子或一價的有機基,較佳為R113 及R114 的至少一者包含聚合性基,更佳為兩者包含聚合性基。作為聚合性基,為藉由熱、自由基等的作用而能夠進行交聯反應的基,較佳為光自由基聚合性基。作為聚合性基的具體例,可列舉具有乙烯性不飽和鍵的基、烷氧基甲基、羥基甲基、醯氧基甲基、環氧基、氧雜環丁烷基、苯并噁唑啉基、嵌段異氰酸酯基、羥甲基、胺基。作為聚醯亞胺前驅物等所具有的自由基聚合性基,較佳為具有乙烯性不飽和鍵的基。 作為具有乙烯性不飽和鍵的基,可列舉:乙烯基、(甲基)烯丙基、由下述式(III)所表示的基等。R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, preferably at least one of R 113 and R 114 contains a polymerizable group, more preferably both of them contain a polymerizable group. The polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, or the like, and is preferably a photoradical polymerizable group. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an oxymethyl group, an epoxy group, an oxetanyl group, and a benzoxazole. Lino group, blocked isocyanate group, methylol group, amine group. As a radical polymerizable group which a polyimide precursor etc. have, the group which has an ethylenically unsaturated bond is preferable. As a group which has an ethylenically unsaturated bond, a vinyl group, a (meth)allyl group, the group represented by following formula (III), etc. are mentioned.

[化12]

Figure 02_image012
[Chemical 12]
Figure 02_image012

式(III)中,R200 表示氫原子或甲基,更佳為甲基。 式(III)中,R201 表示碳數2~12的伸烷基、-CH2 CH(OH)CH2 -或碳數4~30的聚氧伸烷基。 作為適宜的R201 的例子,可列舉:伸乙基、伸丙基、三亞甲基、四亞甲基、1,2-丁二基、1,3-丁二基、五亞甲基、六亞甲基、八亞甲基、十二亞甲基、-CH2 CH(OH)CH2 -,更佳為伸乙基、伸丙基、三亞甲基、-CH2 CH(OH)CH2 -。 特佳為R200 為甲基,R201 為伸乙基。In formula (III), R 200 represents a hydrogen atom or a methyl group, more preferably a methyl group. In formula (III), R 201 represents an alkylene group having 2 to 12 carbon atoms, -CH 2 CH(OH)CH 2 - or a polyoxyalkylene group having 4 to 30 carbon atoms. Examples of suitable R 201 include ethylidene, propylidene, trimethylene, tetramethylene, 1,2-butanediyl, 1,3-butanediyl, pentamethylene, hexamethylene Methylene, octamethylene, dodecylene, -CH 2 CH(OH)CH 2 -, more preferably ethylidene, propylidene, trimethylene, -CH 2 CH(OH)CH 2 -. Particularly preferably, R 200 is a methyl group, and R 201 is an ethylidene group.

R113 及R114 分別獨立地表示氫原子或一價的有機基。作為一價的有機基,可列舉具有一個、兩個或三個、較佳為一個鍵結於構成芳基的碳上的酸性基的芳香族基及芳烷基等。具體而言,可列舉:具有酸性基的碳數6~20的芳香族基、具有酸性基的碳數7~25的芳烷基。更具體而言,可列舉具有酸性基的苯基及具有酸性基的苄基。酸性基較佳為OH基。 R113 或R114 較佳為氫原子、2-羥基苄基、3-羥基苄基及4-羥基苄基。R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group. The monovalent organic group includes an aromatic group, an aralkyl group, and the like having one, two, or three, preferably one, acidic group bonded to carbon constituting the aryl group. Specifically, an aromatic group having 6 to 20 carbon atoms having an acidic group, and an aralkyl group having 7 to 25 carbon atoms having an acidic group can be mentioned. More specifically, the phenyl group which has an acidic group and the benzyl group which has an acidic group are mentioned. The acidic group is preferably an OH group. R 113 or R 114 is preferably a hydrogen atom, 2-hydroxybenzyl, 3-hydroxybenzyl and 4-hydroxybenzyl.

就對於有機溶劑的溶解度的觀點而言,R113 或R114 較佳為一價的有機基。 烷基的碳數較佳為1~30。烷基可為直鏈、分支、環狀的任一種。作為直鏈或分支的烷基,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二基、十四基、十八基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、2-乙基己基、2-(2-(2-甲氧基乙氧基)乙氧基)乙氧基、2-(2-(2-乙氧基乙氧基)乙氧基)乙氧基、2-(2-(2-(2-甲氧基乙氧基)乙氧基)乙氧基)乙氧基、及2-(2-(2-(2-乙氧基乙氧基)乙氧基)乙氧基)乙氧基。環狀的烷基可為單環的環狀的烷基,亦可為多環的環狀的烷基。作為單環的環狀的烷基,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環的環狀的烷基,例如可列舉:金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基。其中,就與高感度化併存的觀點而言,最佳為環己基。另外,作為經芳香族基取代的烷基,較佳為經後述的芳香族基取代的直鏈烷基。 作為芳香族基,具體而言為:經取代或未經取代的苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、乙烷合萘(acenaphthene)環、菲環、蒽環、稠四苯環、䓛環、三伸苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹噁唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并吡喃環、呫噸環、啡噁噻環、啡噻嗪環或啡嗪環。最佳為苯環。From the viewpoint of solubility in an organic solvent, R 113 or R 114 is preferably a monovalent organic group. The number of carbon atoms in the alkyl group is preferably from 1 to 30. The alkyl group may be any of straight chain, branched and cyclic. Examples of straight-chain or branched alkyl groups include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, Octadecyl, isopropyl, isobutyl, sec-butyl, tert-butyl, 1-ethylpentyl, 2-ethylhexyl, 2-(2-(2-methoxyethoxy) Ethoxy)ethoxy, 2-(2-(2-ethoxyethoxy)ethoxy)ethoxy, 2-(2-(2-(2-methoxyethoxy)ethyl) oxy)ethoxy)ethoxy, and 2-(2-(2-(2-ethoxyethoxy)ethoxy)ethoxy)ethoxy. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. As a monocyclic cyclic alkyl group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group are mentioned, for example. Examples of polycyclic cyclic alkyl groups include adamantyl, norbornyl, bornyl, camphenyl, decalinyl, tricyclodecyl, tetracyclodecyl, and camphenyl , dicyclohexyl and pinenyl. Among them, a cyclohexyl group is the most preferable from the viewpoint of coexisting with high sensitivity. Moreover, as the alkyl group substituted with an aromatic group, the straight-chain alkyl group substituted with the aromatic group mentioned later is preferable. Specific examples of the aromatic group include: substituted or unsubstituted benzene ring, naphthalene ring, pentavine ring, indene ring, azulene ring, heptavine ring, indene ring, perylene ring, condensed pentabenzene ring , acenaphthene ring, phenanthrene ring, anthracene ring, fused tetraphenyl ring, tetraphenyl ring, triphenylene ring, perylene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole Ring, Thiazole Ring, Pyridine Ring, Pyrazine Ring, Pyrimidine Ring, Pyridazine Ring, Indolizine Ring, Indole Ring, Benzofuran Ring, Benzothiophene Ring, Isobenzofuran Ring, Quinazine Ring, Quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthrene ring, acridine ring, phenanthrene ring, thianthrene ring, benzopyran ring, xanthene ring, phenothiazine, phenothiazine, or phenazine. The best is a benzene ring.

式(2)中,當R113 為氫原子時或當R114 為氫原子時,聚醯亞胺前驅物可與具有乙烯性不飽和鍵的三級胺化合物形成抗衡鹽(counter salt)。作為此種具有乙烯性不飽和鍵的三級胺化合物的例子,可列舉N,N-二甲基胺基甲基丙烯酸丙酯。In formula (2), when R 113 is a hydrogen atom or when R 114 is a hydrogen atom, the polyimide precursor can form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. As an example of the tertiary amine compound which has such an ethylenically unsaturated bond, N,N- dimethylamino propyl methacrylate is mentioned.

另外,聚醯亞胺前驅物亦較佳為於結構單元中具有氟原子。聚醯亞胺前驅物中的氟原子含量較佳為10質量%以上,另外,較佳為20質量%以下。In addition, the polyimide precursor also preferably has a fluorine atom in the structural unit. The content of fluorine atoms in the polyimide precursor is preferably 10% by mass or more, and is preferably 20% by mass or less.

另外,以提升與基板的密著性為目的,聚醯亞胺前驅物亦可與具有矽氧烷結構的脂肪族基進行共聚合。具體而言,作為二胺成分,可列舉雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。In addition, the polyimide precursor may be copolymerized with an aliphatic group having a siloxane structure for the purpose of improving adhesion to the substrate. Specifically, as a diamine component, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. are mentioned.

由式(2)所表示的重複單元較佳為由式(2-A)所表示的重複單元。即,本發明中使用的聚醯亞胺前驅物等的至少一種較佳為具有由式(2-A)所表示的重複單元的前驅物。藉由設為此種結構,可進一步擴大曝光寬容度的範圍。 式(2-A) [化13]

Figure 02_image013
式(2-A)中,A1 及A2 表示氧原子,R111 及R112 分別獨立地表示二價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基,R113 及R114 的至少一者為包含聚合性基的基,較佳為兩者為聚合性基。The repeating unit represented by formula (2) is preferably a repeating unit represented by formula (2-A). That is, at least one of the polyimide precursor and the like used in the present invention is preferably a precursor having a repeating unit represented by formula (2-A). By setting it as such a structure, the range of exposure latitude can be further expanded. Formula (2-A) [Chemical 13]
Figure 02_image013
In formula (2-A), A 1 and A 2 represent an oxygen atom, R 111 and R 112 each independently represent a divalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, At least one of R 113 and R 114 is a group containing a polymerizable group, and preferably both are a polymerizable group.

A1 、A2 、R111 、R113 及R114 分別獨立地與式(2)中的A1 、A2 、R111 、R113 及R114 為相同含義,較佳的範圍亦相同。 R112 與式(5)中的R112 為相同含義,較佳的範圍亦相同。A 1 , A 2 , R 111 , R 113 and R 114 independently have the same meanings as A 1 , A 2 , R 111 , R 113 and R 114 in formula (2), and their preferred ranges are also the same. R 112 has the same meaning as R 112 in formula (5), and the preferred range is also the same.

聚醯亞胺前驅物可包含一種由式(2)所表示的重複結構單元,亦可包含兩種以上。另外,亦可包含由式(2)所表示的重複單元的結構異構物。另外,聚醯亞胺前驅物除所述式(2)的重複單元以外,當然可亦包含其他種類的重複結構單元。The polyimide precursor may contain one type of repeating structural unit represented by the formula (2), or may contain two or more types. In addition, structural isomers of the repeating unit represented by the formula (2) may also be included. In addition, the polyimide precursor may, of course, contain other types of repeating structural units in addition to the repeating unit of the formula (2).

作為本發明中的聚醯亞胺前驅物的一實施形態,可例示所有重複單元的50莫耳%以上、進而70莫耳%以上、尤其90莫耳%以上為由式(2)所表示的重複單元的聚醯亞胺前驅物。As an embodiment of the polyimide precursor in the present invention, 50 mol % or more, further 70 mol % or more, especially 90 mol % or more of all repeating units are represented by the formula (2). Polyimide precursors for repeating units.

聚醯亞胺前驅物的重量平均分子量(Mw)較佳為18,000~30,000,更佳為20,000~27,000,進而佳為22,000~25,000。另外,數量平均分子量(Mn)較佳為7,200~14,000,更佳為8,000~12,000,進而佳為9,200~11,200。 所述聚醯亞胺前驅物的分散度較佳為2.5以上,更佳為2.7以上,進而佳為2.8以上。聚醯亞胺前驅物的分散度的上限值並無特別限定,例如較佳為4.5以下,更佳為4.0以下,進而佳為3.8以下,進而較佳為3.2以下,進而更佳為3.1以下,進而尤佳為3.0以下,特佳為2.95以下。The weight average molecular weight (Mw) of the polyimide precursor is preferably 18,000 to 30,000, more preferably 20,000 to 27,000, and still more preferably 22,000 to 25,000. In addition, the number average molecular weight (Mn) is preferably 7,200 to 14,000, more preferably 8,000 to 12,000, still more preferably 9,200 to 11,200. The degree of dispersion of the polyimide precursor is preferably 2.5 or more, more preferably 2.7 or more, and still more preferably 2.8 or more. The upper limit value of the degree of dispersion of the polyimide precursor is not particularly limited, but is, for example, preferably 4.5 or less, more preferably 4.0 or less, still more preferably 3.8 or less, still more preferably 3.2 or less, and still more preferably 3.1 or less , more preferably 3.0 or less, and particularly preferably 2.95 or less.

<<聚醯亞胺>> 作為本發明中使用的聚醯亞胺,只要為具有醯亞胺環的高分子化合物則並無特別限定,較佳為由下述式(4)所表示的化合物,更佳為由式(4)所表示的且具有聚合性基的化合物。 式(4) [化14]

Figure 02_image014
式(4)中,R131 表示二價的有機基,R132 表示四價的有機基。 當具有聚合性基時,聚合性基可位於R131 及R132 的至少一者中,亦可如下述式(4-1)或式(4-2)所示般位於聚醯亞胺的末端。 (式4-1) [化15]
Figure 02_image015
式(4-1)中,R133 為聚合性基,其他基與式(4)為相同含義。 (式4-2) [化16]
Figure 02_image016
R134 及R135 的至少一者為聚合性基,當不為聚合性基時為有機基,其他基與式(4)為相同含義。<<Polyimide>> The polyimide used in the present invention is not particularly limited as long as it is a polymer compound having an imine ring, but is preferably a compound represented by the following formula (4) , more preferably a compound represented by formula (4) and having a polymerizable group. Formula (4) [Chemical 14]
Figure 02_image014
In formula (4), R 131 represents a divalent organic group, and R 132 represents a tetravalent organic group. When it has a polymerizable group, the polymerizable group may be located in at least one of R 131 and R 132 , or may be located at the terminal of the polyimide as shown in the following formula (4-1) or formula (4-2). . (Formula 4-1) [Chemical 15]
Figure 02_image015
In formula (4-1), R 133 is a polymerizable group, and other groups have the same meaning as in formula (4). (Formula 4-2) [Chemical 16]
Figure 02_image016
At least one of R 134 and R 135 is a polymerizable group, and when it is not a polymerizable group, it is an organic group, and the other groups have the same meaning as in formula (4).

聚合性基與所述聚醯亞胺前驅物等所具有的聚合性基中所敘述的聚合性基為相同含義。 R131 表示二價的有機基。作為二價的有機基,可例示與式(2)中的R111 相同者,較佳的範圍亦相同。 另外,作為R131 ,可列舉二胺的胺基去除後所殘存的二胺殘基。作為二胺,可列舉脂肪族、環式脂肪族或芳香族二胺等。作為具體的例子,可列舉聚醯亞胺前驅物的式(2)中的R111 的例子。The polymerizable group has the same meaning as the polymerizable group described in the polymerizable group contained in the polyimide precursor or the like. R 131 represents a divalent organic group. As a divalent organic group, the same thing as R 111 in formula (2) can be illustrated, and the preferable range is also the same. In addition, as R 131 , a diamine residue remaining after removal of the amine group of the diamine can be mentioned. As the diamine, an aliphatic, cycloaliphatic or aromatic diamine etc. are mentioned. As a specific example, the example of R111 in Formula (2) of a polyimide precursor can be mentioned.

就更有效地抑制煅燒時的翹曲的產生的方面而言,R131 較佳為於主鏈具有至少兩個以上的烷二醇單元的二胺殘基。更佳為於一分子中一併包含兩個以上的乙二醇鏈、丙二醇鏈的任一者或兩者的二胺殘基,進而更佳為不含芳香環的二胺殘基。R 131 is preferably a diamine residue having at least two or more alkanediol units in the main chain from the viewpoint of more effectively suppressing the occurrence of warpage during calcination. More preferably, it is a diamine residue containing any one or both of two or more ethylene glycol chains and propylene glycol chains in one molecule, and even more preferably, it is a diamine residue that does not contain an aromatic ring.

作為於一分子中一併包含兩個以上的乙二醇鏈、丙二醇鏈的任一者或兩者的二胺,可列舉:吉夫胺(Jeffamine)(註冊商標)KH-511、吉夫胺(Jeffamine)(註冊商標)ED-600、吉夫胺(Jeffamine)(註冊商標)ED-900、吉夫胺(Jeffamine)(註冊商標)ED-2003、吉夫胺(Jeffamine)(註冊商標)EDR-148、吉夫胺(Jeffamine)(註冊商標)EDR-176、D-200、D-400、D-2000、D-4000(以上為商品名,亨斯邁(HUNTSMAN)(股份)製造),1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺等,但並不限定於該些二胺。As a diamine containing either or both of two or more ethylene glycol chains and propylene glycol chains in one molecule, Jeffamine (registered trademark) KH-511, Jeffamine (Jeffamine) can be mentioned. ) (registered trademark) ED-600, Jeffamine (registered trademark) ED-900, Jeffamine (registered trademark) ED-2003, Jeffamine (registered trademark) EDR-148, Jeffamine (Jeffamine) (registered trademark) EDR-176, D-200, D-400, D-2000, D-4000 (the above are trade names, manufactured by Huntsman Co., Ltd.), 1-(2-( 2-(2-Aminopropoxy)ethoxy)propoxy)propan-2-amine, 1-(1-(1-(2-aminopropoxy)propan-2-yl)oxy ) propane-2-amine, etc., but not limited to these diamines.

R132 表示四價的有機基。作為四價的有機基,可例示與式(2)中的R115 相同者,較佳的範圍亦相同。 例如,作為R115 所例示的四價的有機基的四個鍵結基與所述式(4)中的四個-C(=O)-部分鍵結而形成縮合環。 [化17]

Figure 02_image017
R 132 represents a tetravalent organic group. As a tetravalent organic group, the same thing as R 115 in formula (2) can be illustrated, and the preferable range is also the same. For example, four bonding groups of the tetravalent organic group exemplified by R 115 are bonded to four -C(=O)- moieties in the above formula (4) to form a condensed ring. [Chemical 17]
Figure 02_image017

另外,R132 可列舉自四羧酸二酐中去除酐基後所殘存的四羧酸殘基等。作為具體的例子,可列舉聚醯亞胺前驅物的式(2)中的R115 的例子。就硬化膜的強度的觀點而言,R132 較佳為具有一個~四個芳香環的芳香族二胺殘基。Moreover, the tetracarboxylic-acid residue etc. which remain after removing an anhydride group from a tetracarboxylic dianhydride are mentioned as R132 . As a specific example, the example of R115 in Formula (2) of a polyimide precursor can be mentioned. From the viewpoint of the strength of the cured film, R 132 is preferably an aromatic diamine residue having one to four aromatic rings.

亦較佳為R131 與R132 的至少一者中具有OH基。更具體而言,作為R131 ,可列舉2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、所述(DA-1)~(DA-18)作為較佳的例子,作為R132 ,可列舉所述(DAA-1)~(DAA-5)作為較佳的例子。It is also preferable that at least one of R 131 and R 132 has an OH group. More specifically, R 131 includes 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane , 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, the (DA-1)~( DA-18) As a preferable example, as R132 , the said (DAA-1) - (DAA-5) are mentioned as a preferable example.

另外,聚醯亞胺亦較佳為於結構單元中具有氟原子。聚醯亞胺中的氟原子含量較佳為10質量%以上,另外,較佳為20質量%以下。Moreover, it is also preferable that polyimide has a fluorine atom in a structural unit. The fluorine atom content in the polyimide is preferably 10% by mass or more, and is preferably 20% by mass or less.

另外,以提升與基板的密著性為目的,聚醯亞胺亦可將具有矽氧烷結構的脂肪族的基共聚合。具體而言,作為二胺成分,可列舉雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。Moreover, in order to improve the adhesiveness with a board|substrate, the aliphatic group which has a siloxane structure can also be copolymerized with polyimide. Specifically, as a diamine component, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. are mentioned.

另外,為了提升組成物的保存穩定性,聚醯亞胺較佳為利用單胺、酸酐、單羧酸、單醯氯化合物、單活性酯化合物等封端劑將主鏈末端封閉。該些中,更佳為使用單胺。作為單胺的較佳的化合物,可列舉:苯胺、2-乙炔基苯胺、3-乙炔基苯胺、4-乙炔基苯胺、5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基噻吩、3-胺基噻吩、4-胺基噻吩等。可使用該些的兩種以上,亦可藉由使多種封端劑反應而導入多種不同的末端基。In addition, in order to improve the storage stability of the composition, the polyimide is preferably a main chain end capped with a capping agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monochloride compound, and a monoactive ester compound. Among these, it is more preferable to use a monoamine. Preferable monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, and 1-hydroxy-7-amine naphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-amine naphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-amine Naphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6 -Dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophene, 3-aminothiophene, 4-aminothiophene, etc. Two or more of these may be used, and a plurality of different terminal groups may be introduced by reacting a plurality of end-capping agents.

聚醯亞胺較佳為醯亞胺化率為85%以上,更佳為90%以上。藉由醯亞胺化率為85%以上,由藉由加熱而進行醯亞胺化時所引起的閉環導致的膜收縮變小,可抑制翹曲的產生。The polyimide is preferably 85% or more, more preferably 90% or more. When the imidization rate is 85% or more, the film shrinkage due to ring closure caused by the imidization by heating is reduced, and the occurrence of warpage can be suppressed.

聚醯亞胺除可包含全部基於一種R131 或R132 的所述式(4)的重複結構單元以外,亦可包含基於該些基的兩個以上的不同種類的重複單元。另外,除所述式(4)的重複單元以外,聚醯亞胺可亦包含其他種類的重複結構單元。In addition to all the repeating structural units of the formula (4) based on one R 131 or R 132 , the polyimide may also contain two or more different kinds of repeating units based on these groups. In addition, the polyimide may contain other kinds of repeating structural units in addition to the repeating unit of the formula (4).

聚醯亞胺例如可利用使用已知的醯亞胺化反應法使聚醯亞胺前驅物完全醯亞胺化的方法、或者於中途停止醯亞胺化反應而導入一部分醯亞胺結構的方法、進而藉由摻和完全醯亞胺化的聚合物與該聚醯亞胺前驅物而導入一部分醯亞胺結構的方法進行合成,所述聚醯亞胺前驅物是利用以下方法而獲得:於低溫中使四羧酸二酐與二胺化合物(將一部分置換為作為單胺的封端劑)進行反應的方法;於低溫中使四羧酸二酐(將一部分置換為作為酸酐或者單醯氯化合物或單活性酯化合物的封端劑)與二胺化合物進行反應的方法;藉由四羧酸二酐與醇而獲得二酯,其後於縮合劑的存在下與二胺(將一部分置換為作為單胺的封端劑)進行反應的方法;藉由四羧酸二酐與醇而獲得二酯,其後將剩餘的二羧酸加以醯氯化,與二胺(將一部分置換為作為單胺的封端劑)進行反應的方法等。 The polyimide can be, for example, a method of completely imidizing a polyimide precursor using a known imidization reaction method, or a method of stopping the imidization reaction in the middle and introducing a part of the imide structure. , and then synthesize by incorporating a fully imidized polymer and the polyimide precursor to introduce a part of the imide structure, and the polyimide precursor is obtained by using the following method: A method of reacting a tetracarboxylic dianhydride with a diamine compound (a part of which is substituted with a capping agent as a monoamine) at a low temperature; a method of reacting a tetracarboxylic dianhydride (a part of which is substituted with an acid anhydride or monochloride) at a low temperature A method of reacting a compound or a monoactive ester compound with a diamine compound; a diester is obtained by using a tetracarboxylic dianhydride and an alcohol, which is subsequently replaced with a diamine (a part of which is substituted with an alcohol) in the presence of a condensing agent. A method of reacting as a monoamine end-capping agent); a diester is obtained by tetracarboxylic dianhydride and an alcohol, and then the remaining dicarboxylic acid is chlorinated with diamine (a part of which is replaced as a monoamine) amine end-capping agent), a method of reacting, etc.

作為聚醯亞胺的市售品,可例示都力米多(Durimide)(註冊商標)284(富士軟片(Fujifilm)(股份)製造)、瑪蒂米得(Matrimid)5218(亨斯邁(HUNTSMAN)(股份)製造)。 Examples of commercially available polyimide include Durimide (registered trademark) 284 (manufactured by Fujifilm Co., Ltd.), Matrimid 5218 (HUNTSMAN). ) (shares) manufacturing).

聚醯亞胺的重量平均分子量(Mw)較佳為5,000~70,000,更佳為8,000~50,000,進而佳為10,000~30,000。藉由將重量平均分子量設為5,000以上,可提升硬化後的膜的耐彎折性。為了獲得機械特性優異的硬化膜,重量平均分子量特佳為20,000以上。另外,當含有兩種以上聚醯亞胺時,較佳為至少一種聚醯亞胺的重量平均分子量為所述範圍。 The weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and still more preferably 10,000 to 30,000. The bending resistance of the film after hardening can be improved by making a weight average molecular weight into 5,000 or more. In order to obtain a cured film excellent in mechanical properties, the weight average molecular weight is particularly preferably 20,000 or more. In addition, when two or more kinds of polyimides are contained, it is preferable that the weight average molecular weight of at least one polyimide is in the above-mentioned range.

<<聚苯并噁唑前驅物>> <<Polybenzoxazole precursor>>

本發明中使用的聚苯并噁唑前驅物對其結構等並無特別限定,較佳為由下述式(3)表示。 The structure and the like of the polybenzoxazole precursor used in the present invention are not particularly limited, but it is preferably represented by the following formula (3).

Figure 109142641-A0305-02-0040-7
Figure 109142641-A0305-02-0040-7

式(3)中,R121表示二價的有機基,R122表示四價的有機基,R123及R124分別獨立地表示氫原子或一價的有機基。 In formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group.

式(3)中,R123 及R124 分別與式(2)中的R113 為相同含義,較佳的範圍亦相同。即,較佳為至少一者為聚合性基。 式(3)中,R121 表示二價的有機基。作為二價的有機基,較佳為包含脂肪族基及芳香族基的至少一者的基。作為脂肪族基,較佳為直鏈的脂肪族基。R121 較佳為二羧酸殘基。二羧酸殘基可僅使用一種,亦可使用兩種以上。In formula (3), R 123 and R 124 have the same meanings as R 113 in formula (2), respectively, and their preferred ranges are also the same. That is, at least one of them is preferably a polymerizable group. In formula (3), R 121 represents a divalent organic group. The divalent organic group is preferably a group containing at least one of an aliphatic group and an aromatic group. The aliphatic group is preferably a linear aliphatic group. R 121 is preferably a dicarboxylic acid residue. Only one type of dicarboxylic acid residue may be used, or two or more types may be used.

作為二羧酸,較佳為包含脂肪族基的二羧酸及包含芳香族基的二羧酸,更佳為包含芳香族基的二羧酸。 作為包含脂肪族基的二羧酸,較佳為包含直鏈或分支(較佳為直鏈)的脂肪族基的二羧酸,更佳為包含直鏈或分支(較佳為直鏈)的脂肪族基與兩個COOH的二羧酸。直鏈或分支(較佳為直鏈)的脂肪族基的碳數較佳為2~30,更佳為2~25,進而佳為3~20,進而較佳為4~15,特佳為5~10。直鏈的脂肪族基較佳為伸烷基。 作為包含直鏈的脂肪族基的二羧酸,可列舉:丙二酸、二甲基丙二酸、乙基丙二酸、異丙基丙二酸、二正丁基丙二酸、丁二酸、四氟丁二酸、甲基丁二酸、2,2-二甲基丁二酸、2,3-二甲基丁二酸、二甲基甲基丁二酸、戊二酸、六氟戊二酸、2-甲基戊二酸、3-甲基戊二酸、2,2-二甲基戊二酸、3,3-二甲基戊二酸、3-乙基-3-甲基戊二酸、己二酸、八氟己二酸、3-甲基己二酸、庚二酸、2,2,6,6-四甲基庚二酸、辛二酸、十二氟辛二酸、壬二酸、癸二酸、十六氟癸二酸、1,9-壬二酸、十二烷二酸、十三烷二酸、十四烷二酸、十五烷二酸、十六烷二酸、十七烷二酸、十八烷二酸、十九烷二酸、二十烷二酸、二十一烷二酸、二十二烷二酸、二十三烷二酸、二十四烷二酸、二十五烷二酸、二十六烷二酸、二十七烷二酸、二十八烷二酸、二十九烷二酸、三十烷二酸、三十一烷二酸、三十二烷二酸、二甘醇酸、以及由下述式所表示的二羧酸等。As the dicarboxylic acid, a dicarboxylic acid containing an aliphatic group and a dicarboxylic acid containing an aromatic group are preferable, and a dicarboxylic acid containing an aromatic group is more preferable. The dicarboxylic acid containing an aliphatic group is preferably a dicarboxylic acid containing a linear or branched (preferably linear) aliphatic group, and more preferably a linear or branched (preferably linear) dicarboxylic acid. Dicarboxylic acid with aliphatic group and two COOH. The carbon number of the linear or branched (preferably linear) aliphatic group is preferably 2 to 30, more preferably 2 to 25, further preferably 3 to 20, further preferably 4 to 15, particularly preferably 5 to 10. The straight-chain aliphatic group is preferably an alkylene group. Examples of the dicarboxylic acid containing a straight-chain aliphatic group include malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, butanedioic acid acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexanoic acid Fluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3- Methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluoroic acid Suberic acid, azelaic acid, sebacic acid, hexadecanedioic acid, 1,9- azelaic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid , hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, hexadecanedioic acid, docosanedioic acid, tridecanedioic acid acid, tetracosanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacosanedioic acid, Tridecanedioic acid, tridecanedioic acid, diglycolic acid, dicarboxylic acid represented by the following formula, and the like.

[化19]

Figure 02_image020
(式中,Z為碳數1~6的烴基,n為1~6的整數)[Chemical 19]
Figure 02_image020
(in the formula, Z is a hydrocarbon group having 1 to 6 carbon atoms, and n is an integer of 1 to 6)

作為包含芳香族基的二羧酸,較佳為具有以下的芳香族基的二羧酸,更佳為僅包含以下的芳香族基與兩個COOH的二羧酸。As a dicarboxylic acid containing an aromatic group, the dicarboxylic acid which has the following aromatic group is preferable, and the dicarboxylic acid which contains only the following aromatic group and two COOH is more preferable.

[化20]

Figure 02_image022
式中,A表示選自由-CH2 -、-O-、-S-、-SO2 -、-CO-、-NHCO-、-C(CF3 )2 -及-C(CH3 )2 -所組成的群組中的二價的基。[hua 20]
Figure 02_image022
In the formula, A represents selected from -CH 2 -, -O-, -S-, -SO 2 -, -CO-, -NHCO-, -C(CF 3 ) 2 - and -C(CH 3 ) 2 - Divalent bases in the group consisting of.

作為包含芳香族基的二羧酸的具體例,可列舉:4,4'-羰基二苯甲酸及4,4'-二羧基二苯基醚、對苯二甲酸。As a specific example of the dicarboxylic acid containing an aromatic group, 4,4'- carbonyl dibenzoic acid, 4,4'- dicarboxydiphenyl ether, and terephthalic acid are mentioned.

式(3)中,R122 表示四價的有機基。作為四價的有機基,與所述式(2)中的R115 為相同含義,較佳的範圍亦相同。 另外,R122 較佳為源自雙胺基苯酚衍生物的基,作為源自雙胺基苯酚衍生物的基,例如可列舉:3,3'-二胺基-4,4'-二羥基聯苯、4,4'-二胺基-3,3'-二羥基聯苯、3,3'-二胺基-4,4'-二羥基二苯基碸、4,4'-二胺基-3,3'-二羥基二苯基碸、雙-(3-胺基-4-羥基苯基)甲烷、2,2-雙-(3-胺基-4-羥基苯基)丙烷、2,2-雙-(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙-(4-胺基-3-羥基苯基)六氟丙烷、雙-(4-胺基-3-羥基苯基)甲烷、2,2-雙-(4-胺基-3-羥基苯基)丙烷、4,4'-二胺基-3,3'-二羥基二苯甲酮、3,3'-二胺基-4,4'-二羥基二苯甲酮、4,4'-二胺基-3,3'-二羥基二苯醚、3,3'-二胺基-4,4'-二羥基二苯醚、1,4-二胺基-2,5-二羥基苯、1,3-二胺基-2,4-二羥基苯、1,3-二胺基-4,6-二羥基苯等。該些雙胺基苯酚可單獨或混合使用。In formula (3), R 122 represents a tetravalent organic group. The tetravalent organic group has the same meaning as that of R 115 in the above-mentioned formula (2), and the preferable range is also the same. In addition, R 122 is preferably a group derived from a bisaminophenol derivative, and examples of the group derived from a bisaminophenol derivative include 3,3'-diamino-4,4'-dihydroxyl Biphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, 3,3'-diamino-4,4'-dihydroxydiphenyl, 4,4'-diamine bis-(3-amino-4-hydroxyphenyl)methane, 2,2-bis-(3-amino-4-hydroxyphenyl)propane, 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis-(4-amino-3-hydroxyphenyl)hexafluoropropane, bis-(4-amine yl-3-hydroxyphenyl)methane, 2,2-bis-(4-amino-3-hydroxyphenyl)propane, 4,4'-diamino-3,3'-dihydroxybenzophenone , 3,3'-diamino-4,4'-dihydroxybenzophenone, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 3,3'-diamino -4,4'-dihydroxydiphenyl ether, 1,4-diamino-2,5-dihydroxybenzene, 1,3-diamino-2,4-dihydroxybenzene, 1,3-diamine base-4,6-dihydroxybenzene, etc. These bisaminophenols can be used alone or in combination.

雙胺基苯酚衍生物之中,較佳為具有下述芳香族基的雙胺基苯酚衍生物。Among bisaminophenol derivatives, bisaminophenol derivatives having the following aromatic groups are preferred.

[化21]

Figure 02_image024
式中,X1 表示-O-、-S-、-C(CF3 )2 -、-CH2 -、-SO2 -、-NHCO-。[Chemical 21]
Figure 02_image024
In the formula, X 1 represents -O-, -S-, -C(CF 3 ) 2 -, -CH 2 -, -SO 2 -, and -NHCO-.

[化22]

Figure 02_image026
(A-s)[Chemical 22]
Figure 02_image026
(As)

式(A-s)中,R1 為氫原子、伸烷基、取代伸烷基、-O-、-S-、-SO2 -、-CO-、-NHCO-、單鍵、或選自下述式(A-sc)的群組中的有機基。R2 為氫原子、烷基、烷氧基、醯氧基、環狀的烷基的任一者,可相同亦可不同。R3 為氫原子、直鏈或分支的烷基、烷氧基、醯氧基、環狀的烷基的任一者,可相同亦可不同。In formula (As), R 1 is a hydrogen atom, an alkylene group, a substituted alkylene group, -O-, -S-, -SO 2 -, -CO-, -NHCO-, a single bond, or selected from the following An organic group in the group of formula (A-sc). R 2 is any of a hydrogen atom, an alkyl group, an alkoxy group, an aryloxy group, and a cyclic alkyl group, which may be the same or different. R 3 is any one of a hydrogen atom, a straight-chain or branched alkyl group, an alkoxy group, an aryloxy group, and a cyclic alkyl group, and may be the same or different.

[化23]

Figure 02_image028
(A-sc) (式(A-sc)中,*表示鍵結於由所述式(A-s)所表示的雙胺基苯酚衍生物的胺基苯酚基的芳香環上)[Chemical 23]
Figure 02_image028
(A-sc) (In the formula (A-sc), * represents an aromatic ring bonded to the aminophenol group of the bisaminophenol derivative represented by the formula (As))

所述式(A-s)中,認為於酚性羥基的鄰位、即R3 上亦具有取代基會使醯胺鍵的羰基碳與羥基的距離更接近,就於低溫下硬化時成為高環化率的效果進一步提高的方面而言特佳。In the formula (As), it is considered that having a substituent at the ortho position of the phenolic hydroxyl group, that is, on R 3 , will make the distance between the carbonyl carbon of the amide bond and the hydroxyl group closer, resulting in high cyclization when hardened at low temperature. It is particularly preferable in that the effect of the rate is further improved.

另外,所述式(A-s)中,R2 為烷基且R3 為烷基可獲得維持對於i射線的高透明性與於低溫下硬化時為高環化率的效果而較佳。In addition, in the formula (As), R 2 is an alkyl group and R 3 is an alkyl group, so that the effect of maintaining high transparency to i-rays and high cyclization rate during curing at low temperature is preferable.

另外,所述式(A-s)中,更佳為R1 為伸烷基或取代伸烷基。作為R1 中的伸烷基及取代伸烷基的具體的例子,可列舉:-CH2 -、-CH(CH3 )-、-C(CH3 )2 -、-CH(CH2 CH3 )-、-C(CH3 )(CH2 CH3 )-、-C(CH2 CH3 )(CH2 CH3 )-、-CH(CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-CH(CH(CH3 )2 )-、-C(CH3 )(CH(CH3 )2 )-、-CH(CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH3 )-、-CH(CH2 CH(CH3 )2 )-、-C(CH3 )(CH2 CH(CH3 )2 )-、-CH(CH2 CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH2 CH3 )-、-CH(CH2 CH2 CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH2 CH2 CH3 )-等,其中就可獲得維持對於i射線的高透明性與於低溫下硬化時為高環化率的效果、同時對於溶劑具有充分的溶解性而平衡性優異的聚苯并噁唑前驅物的方面而言,更佳為-CH2 -、-CH(CH3 )-、-C(CH3 )2 -。In addition, in the above formula (As), it is more preferable that R 1 is an alkylene group or a substituted alkylene group. Specific examples of the alkylene group and the substituted alkylene group in R 1 include -CH 2 -, -CH(CH 3 )-, -C(CH 3 ) 2 -, -CH(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 2 CH 3 )(CH 2 CH 3 )-, -CH(CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -CH(CH(CH 3 ) 2 )-, -C(CH 3 )(CH(CH 3 ) 2 )-, -CH(CH 2 CH 2 CH 2 CH 3 )-, -C( CH3 )( CH2CH2CH2CH3 )-, -CH(CH2CH( CH3 )2 ) -, -C ( CH3 ) ( CH2CH( CH3 ) 2 )-, -CH(CH 2 CH 2 CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 2 CH 2 CH 3 )-, -CH(CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 )-, etc., in which it is possible to maintain high transparency to i-rays and high levels of hardening at low temperatures In terms of the effect of the cyclization rate and the polybenzoxazole precursor having sufficient solubility in the solvent and excellent balance, -CH 2 -, -CH(CH 3 )-, -C( CH 3 ) 2 -.

作為由所述式(A-s)所表示的雙胺基苯酚衍生物的製造方法,例如可參考日本專利特開2013-256506號公報的段落號0085~段落號0094及實施例1(段落號0189~段落號0190),將該些內容併入本說明書中。As a method for producing the bisaminophenol derivative represented by the formula (A-s), for example, reference can be made to paragraphs 0085 to 0094 and Example 1 (paragraphs 0189 to 0189 of Japanese Patent Laid-Open No. 2013-256506) Paragraph No. 0190), which are incorporated into this specification.

作為由所述式(A-s)所表示的雙胺基苯酚衍生物的結構的具體例,可列舉日本專利特開2013-256506號公報的段落號0070~段落號0080中所記載者,將該些內容併入本說明書中。當然,並不限定於該些具體例。Specific examples of the structure of the bisaminophenol derivative represented by the formula (A-s) include those described in paragraphs 0070 to 0080 of Japanese Patent Laid-Open No. 2013-256506. The contents are incorporated into this specification. Of course, it is not limited to these specific examples.

聚苯并噁唑前驅物除所述式(3)的重複單元以外,可亦包含其他種類的重複結構單元。 就可抑制伴隨閉環的翹曲的產生的方面而言,較佳為包含由下述式(SL)所表示的二胺殘基作為其他種類的重複結構單元。In addition to the repeating unit of the formula (3), the polybenzoxazole precursor may also contain other types of repeating structural units. It is preferable to contain the diamine residue represented by following formula (SL) as another kind of repeating structural unit from the point which can suppress the generation|occurence|production of the warpage accompanying ring closure.

[化24]

Figure 02_image030
式(SL)中,Z具有a結構與b結構,R1s 為氫原子或碳數1~10的烴基,R2s 為碳數1~10的烴基,R3s 、R4s 、R5s 、R6s 中的至少一者為芳香族基,剩餘為氫原子或碳數1~30的有機基,分別可相同,亦可不同。a結構及b結構的聚合可為嵌段聚合亦可為無規聚合。Z部分的莫耳%中,a結構為5莫耳%~95莫耳%,b結構為95莫耳%~5莫耳%,且a+b為100莫耳%。[Chemical 24]
Figure 02_image030
In formula (SL), Z has a structure and b structure, R 1s is a hydrogen atom or a hydrocarbon group with 1 to 10 carbon atoms, R 2s is a hydrocarbon group with 1 to 10 carbon atoms, R 3s , R 4s , R 5s , R 6s At least one of them is an aromatic group, and the remainder is a hydrogen atom or an organic group having 1 to 30 carbon atoms, which may be the same or different. The polymerization of the a structure and the b structure may be either block polymerization or random polymerization. In the mol % of the Z part, the a structure is 5 mol % to 95 mol %, the b structure is 95 mol % to 5 mol %, and a+b is 100 mol %.

式(SL)中,作為較佳的Z,可列舉b結構中的R5s 及R6s 為苯基者。另外,由式(SL)所表示的結構的分子量較佳為400~4,000,更佳為500~3,000。藉由將所述分子量設為所述範圍,可更有效地使可降低聚苯并噁唑前驅物的脫水閉環後的彈性模數而抑制翹曲的效果與提升溶劑溶解性的效果併存。In the formula (SL), as preferable Z, those in which R 5s and R 6s in the structure b are phenyl groups can be mentioned. Moreover, 400-4,000 are preferable, and, as for the molecular weight of the structure represented by formula (SL), 500-3,000 are more preferable. By setting the molecular weight in the above range, the effect of reducing the elastic modulus after dehydration and ring closure of the polybenzoxazole precursor to suppress the warpage and the effect of improving the solubility of the solvent can be combined more effectively.

當包含由式(SL)所表示的二胺殘基作為其他種類的重複結構單元時,亦較佳為包含自四羧酸二酐中去除酐基後所殘存的四羧酸殘基作為重複結構單元。作為此種四羧酸殘基的例子,可列舉式(2)中的R115 的例子。When the diamine residue represented by the formula (SL) is included as another kind of repeating structural unit, it is also preferable to include the tetracarboxylic acid residue remaining after removing the anhydride group from the tetracarboxylic dianhydride as the repeating structure unit. As an example of such a tetracarboxylic-acid residue, the example of R115 in Formula (2) is mentioned.

例如當用於後述的組成物中時,聚苯并噁唑前驅物的重量平均分子量(Mw)較佳為18,000~30,000,更佳為20,000~29,000,進而更佳為22,000~28,000。另外,數量平均分子量(Mn)較佳為7,200~14,000,更佳為8,000~12,000,進而佳為9,200~11,200。 所述聚苯并噁唑前驅物的分散度較佳為1.4以上,更佳為1.5以上,進而更佳為1.6以上。聚苯并噁唑前驅物的分散度的上限值並無特別限定,例如較佳為2.6以下,更佳為2.5以下,進而佳為2.4以下,進而較佳為2.3以下,進而更佳為2.2以下。For example, when used in the composition described later, the weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably 18,000 to 30,000, more preferably 20,000 to 29,000, and still more preferably 22,000 to 28,000. In addition, the number average molecular weight (Mn) is preferably 7,200 to 14,000, more preferably 8,000 to 12,000, still more preferably 9,200 to 11,200. The degree of dispersion of the polybenzoxazole precursor is preferably 1.4 or more, more preferably 1.5 or more, and still more preferably 1.6 or more. The upper limit of the degree of dispersion of the polybenzoxazole precursor is not particularly limited, but for example, it is preferably 2.6 or less, more preferably 2.5 or less, still more preferably 2.4 or less, still more preferably 2.3 or less, and still more preferably 2.2 the following.

<<聚苯并噁唑>> 作為聚苯并噁唑,只要為具有苯并噁唑環的高分子化合物則並無特別限定,較佳為由下述式(X)所表示的化合物,更佳為由下述式(X)所表示的且具有聚合性基的化合物。 [化25]

Figure 02_image032
式(X)中,R133 表示二價的有機基,R134 表示四價的有機基。 當具有聚合性基時,聚合性基可位於R133 及R134 的至少一者中,亦可如下述式(X-1)或式(X-2)所示般位於聚苯并噁唑的末端。 式(X-1) [化26]
Figure 02_image034
式(X-1)中,R135 及R136 的至少一者為聚合性基,當不為聚合性基時為有機基,其他基與式(X)為相同含義。 式(X-2) [化27]
Figure 02_image036
式(X-2)中,R137 為聚合性基,除此以外為取代基,其他基與式(X)為相同含義。<<Polybenzoxazole>> The polybenzoxazole is not particularly limited as long as it is a polymer compound having a benzoxazole ring, but is preferably a compound represented by the following formula (X), more preferably Preferably, it is a compound represented by the following formula (X) and having a polymerizable group. [Chemical 25]
Figure 02_image032
In formula (X), R 133 represents a divalent organic group, and R 134 represents a tetravalent organic group. When it has a polymerizable group, the polymerizable group may be located in at least one of R 133 and R 134 , or may be located in the polybenzoxazole as shown in the following formula (X-1) or formula (X-2). end. Formula (X-1) [Chemical 26]
Figure 02_image034
In formula (X-1), at least one of R 135 and R 136 is a polymerizable group, and when it is not a polymerizable group, it is an organic group, and the other groups have the same meaning as in formula (X). Formula (X-2) [Chemical 27]
Figure 02_image036
In formula (X-2), R 137 is a polymerizable group, other than that, it is a substituent, and other groups have the same meaning as in formula (X).

聚合性基與所述聚醯亞胺前驅物等所具有的聚合性基中所敘述的聚合性基為相同含義。The polymerizable group has the same meaning as the polymerizable group described in the polymerizable group contained in the polyimide precursor or the like.

R133 表示二價的有機基。作為二價的有機基,可列舉脂肪族或芳香族基。作為具體的例子,可列舉聚苯并噁唑前驅物的式(3)中的R121 的例子。另外,其較佳的例子與R121 相同。R 133 represents a divalent organic group. As a divalent organic group, an aliphatic or aromatic group is mentioned. As a specific example, the example of R121 in Formula (3) of a polybenzoxazole precursor is mentioned. In addition, its preferable example is the same as that of R 121 .

R134 表示四價的有機基。作為四價的有機基,可列舉聚苯并噁唑前驅物的式(3)中的R122 的例子。另外,其較佳的例子與R122 相同。 例如,作為R122 所例示的四價的有機基的四個鍵結基與所述式(X)中的氮原子、氧原子鍵結而形成縮合環。例如,當R134 為下述有機基時,形成下述結構。 [化28]

Figure 02_image038
R 134 represents a tetravalent organic group. Examples of the tetravalent organic group include R 122 in the formula (3) of the polybenzoxazole precursor. In addition, its preferable example is the same as R 122 . For example, the four bonding groups of the tetravalent organic group exemplified by R 122 are bonded to the nitrogen atom and the oxygen atom in the formula (X) to form a condensed ring. For example, when R 134 is the following organic group, the following structure is formed. [Chemical 28]
Figure 02_image038

聚苯并噁唑較佳為噁唑化率為85%以上,更佳為90%以上。藉由噁唑化率為85%以上,由藉由加熱而進行噁唑化時所引起的閉環導致的膜收縮變小,可更有效地抑制翹曲的產生。The polybenzoxazole preferably has an oxazole rate of 85% or more, more preferably 90% or more. When the oxazolylization ratio is 85% or more, film shrinkage due to ring closure caused by oxazolylization by heating is reduced, and the occurrence of warpage can be suppressed more effectively.

聚苯并噁唑除可包含全部基於一種R131 或R132 的所述式(X)的重複結構單元以外,亦可包含含有兩個以上的不同種類的R131 或R132 的、由所述式(X)所表示的重複單元。另外,除所述式(X)的重複單元以外,聚苯并噁唑可亦包含其他種類的重複結構單元。In addition to the repeating structural units of the formula (X) all based on one R 131 or R 132 , the polybenzoxazole may also contain two or more different kinds of R 131 or R 132 , the A repeating unit represented by formula (X). In addition, in addition to the repeating unit of the formula (X), the polybenzoxazole may also contain other kinds of repeating structural units.

聚苯并噁唑例如可藉由使用已知的噁唑化反應法使聚苯并噁唑前驅物噁唑化而獲得,所述聚苯并噁唑前驅物是使雙胺基苯酚衍生物、與選自包含R133 的二羧酸或所述二羧酸的二羧酸二氯化物及二羧酸衍生物等中的化合物反應而獲得。 再者,於二羧酸的情況下,為了提高反應產率等,亦可使用預先使1-羥基-1,2,3-苯并三唑等反應所得的活性酯型的二羧酸衍生物。The polybenzoxazole can be obtained, for example, by oxazolating a polybenzoxazole precursor, which is a bisaminophenol derivative, It is obtained by reacting with a compound selected from the group consisting of a dicarboxylic acid containing R 133 or a dicarboxylic acid dichloride and a dicarboxylic acid derivative thereof, and the like. Furthermore, in the case of dicarboxylic acid, in order to improve the reaction yield, etc., an active ester-type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance can also be used. .

聚苯并噁唑的重量平均分子量(Mw)較佳為5,000~70,000,更佳為8,000~50,000,進而更佳為10,000~30,000。藉由將重量平均分子量設為5,000以上,可提升硬化後的膜的耐彎折性。為了獲得機械特性優異的硬化膜,重量平均分子量特佳為20,000以上。另外,當含有兩種以上聚苯并噁唑時,較佳為至少一種聚苯并噁唑的重量平均分子量為所述範圍。The weight average molecular weight (Mw) of the polybenzoxazole is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and still more preferably 10,000 to 30,000. The bending resistance of the film after hardening can be improved by making a weight average molecular weight into 5,000 or more. In order to obtain a cured film excellent in mechanical properties, the weight average molecular weight is particularly preferably 20,000 or more. In addition, when two or more kinds of polybenzoxazoles are contained, it is preferable that the weight average molecular weight of at least one polybenzoxazole is in the above-mentioned range.

<<聚醯亞胺前驅物等的製造方法>> 聚醯亞胺前驅物等藉由使二羧酸或二羧酸衍生物與二胺進行反應而獲得。較佳為在使用鹵化劑對二羧酸或二羧酸衍生物進行鹵化後與二胺進行反應而獲得。 於聚醯亞胺前驅物等的製造方法中,較佳為於進行反應時使用有機溶劑。有機溶劑可為一種,亦可為兩種以上。 作為有機溶劑,可根據原料來適當決定,可例示:吡啶、二乙二醇二甲醚(二甘二甲醚(diglyme))、N-甲基吡咯啶酮及N-乙基吡咯啶酮。 聚醯亞胺可在合成聚醯亞胺前驅物後進行加熱而加以環化來製造,亦可直接合成聚醯亞胺。<<Method for producing polyimide precursor, etc.>> A polyimide precursor or the like is obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. It is preferably obtained by reacting with diamine after halogenating a dicarboxylic acid or a dicarboxylic acid derivative using a halogenating agent. In the manufacturing method of a polyimide precursor etc., it is preferable to use an organic solvent when performing a reaction. The organic solvent may be one type or two or more types. The organic solvent can be appropriately determined according to the raw material, and examples thereof include pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, and N-ethylpyrrolidone. Polyimide can be produced by heating and cyclization after synthesizing a polyimide precursor, or directly synthesizing polyimide.

<<<封端劑>>> 於聚醯亞胺前驅物等的製造方法中,為了進一步提升保存穩定性,較佳為利用酸酐、單羧酸、單醯氯化合物、單活性酯化合物等封端劑將聚醯亞胺前驅物等的末端封閉。作為封端劑,更佳為使用單胺,作為單胺的較佳的化合物,可列舉:苯胺、2-乙炔基苯胺、3-乙炔基苯胺、4-乙炔基苯胺、5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基噻吩、3-胺基噻吩、4-胺基噻吩等。可使用該些的兩種以上,亦可藉由使多種封端劑反應而導入多種不同的末端基。<<<Capping agent>>> In the production method of the polyimide precursor, etc., in order to further improve the storage stability, it is preferable to use an end capping agent such as an acid anhydride, a monocarboxylic acid, a monoacyl chloride compound, and a monoactive ester compound to cap the polyimide precursor. etc. end closure. As the blocking agent, it is more preferable to use a monoamine, and preferable compounds of the monoamine include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, and 5-amino-8 -Hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7 -aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5 -aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4 -aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminosalicylic acid Benzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophene, 3-aminothiophene, 4-amine thiophene, etc. Two or more of these may be used, and a plurality of different terminal groups may be introduced by reacting a plurality of end-capping agents.

<<<固體析出>>> 於聚醯亞胺前驅物等的製造中,可包括使固體析出的步驟。具體而言,可藉由使反應液中的聚醯亞胺前驅物等沈澱至水中,並溶解於四氫呋喃等可溶解聚醯亞胺前驅物等的溶劑中來進行固體析出。 其後,對聚醯亞胺前驅物等進行乾燥,從而可獲得粉末狀的聚醯亞胺前驅物等。<<<Solid Precipitation>>> In the manufacture of a polyimide precursor or the like, a step of precipitating a solid may be included. Specifically, the solid precipitation can be performed by precipitating the polyimide precursor and the like in the reaction liquid into water and dissolving in a solvent such as tetrahydrofuran in which the polyimide precursor and the like can be dissolved. After that, the polyimide precursor and the like are dried to obtain a powdery polyimide precursor and the like.

本發明中使用的組成物可包含聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的僅一種,亦可包含兩種以上。另外,亦可包含兩種聚醯亞胺前驅物等而包含兩種以上的種類相同且結構不同的樹脂。 本發明中使用的組成物中的聚醯亞胺前驅物等的含量較佳為固體成分的10質量%~99質量%,更佳為50質量%~98質量%,進而佳為70質量%~96質量%。 以下,對本發明中使用的組成物可包含的成分進行說明。當然,本發明亦可包含該些以外的成分,且並非必需該些成分。The composition used in the present invention may contain only one of the polyimide precursor, polyimide, polybenzoxazole precursor, and polybenzoxazole, or may contain two or more. In addition, two or more kinds of resins having the same kind and different structures may be included, such as two types of polyimide precursors. The content of the polyimide precursor and the like in the composition used in the present invention is preferably 10 to 99 mass % of the solid content, more preferably 50 to 98 mass %, still more preferably 70 to 70 mass % 96% by mass. Hereinafter, components that may be contained in the composition used in the present invention will be described. Of course, the present invention may also include components other than these, and these components are not required.

<<聚合性化合物>> 如上所述,本發明中較佳為聚醯亞胺前驅物等樹脂具有聚合性基,或感光性樹脂組成物包含聚合性化合物。藉由設為此種構成,可形成耐熱性更優異的硬化膜。 聚合性化合物為具有聚合性基的化合物,可使用可藉由自由基、酸、鹼等來進行交聯反應的公知的化合物。所謂聚合性基,可例示所述聚醯亞胺前驅物等中所敘述的聚合性基等。聚合性化合物可僅包含一種,亦可包含兩種以上。 聚合性化合物例如可為單體、預聚物、寡聚物及該些的混合物以及該些的多聚體等化學形態的任一種。<<Polymerizable compound>> As described above, in the present invention, it is preferable that the resin such as the polyimide precursor has a polymerizable group, or that the photosensitive resin composition contains a polymerizable compound. By setting it as such a structure, the cured film which is more excellent in heat resistance can be formed. The polymerizable compound is a compound having a polymerizable group, and a known compound that can undergo a crosslinking reaction by a radical, an acid, a base, or the like can be used. As a polymerizable group, the polymerizable group etc. which were described in the said polyimide precursor etc. can be illustrated. Only one type of polymerizable compound may be included, or two or more types may be included. The polymerizable compound may be, for example, any of chemical forms such as monomers, prepolymers, oligomers, mixtures of these, and multimers of these.

於本發明中,單體型的聚合性化合物(以下,亦稱為聚合性單體)是與高分子化合物不同的化合物。聚合性單體典型的是低分子化合物,較佳為分子量為2,000以下的低分子化合物,更佳為分子量為1,500以下的低分子化合物,進而更佳為分子量為900以下的低分子化合物。再者,聚合性單體的分子量通常為100以上。 另外,寡聚物型的聚合性化合物典型的是分子量比較低的聚合物,較佳為10個~100個聚合性單體鍵結而成的聚合物。寡聚物型的聚合性化合物的重量平均分子量較佳為2,000~20,000,更佳為2,000~15,000,最佳為2,000~10,000。In the present invention, the monomeric polymerizable compound (hereinafter, also referred to as a polymerizable monomer) is a compound different from the polymer compound. The polymerizable monomer is typically a low molecular weight compound, preferably a low molecular weight compound with a molecular weight of 2,000 or less, more preferably a low molecular weight compound with a molecular weight of 1,500 or less, and still more preferably a low molecular weight compound with a molecular weight of 900 or less. In addition, the molecular weight of the polymerizable monomer is usually 100 or more. In addition, the oligomer-type polymerizable compound is typically a polymer with a relatively low molecular weight, preferably a polymer in which 10 to 100 polymerizable monomers are bonded. The weight average molecular weight of the oligomer-type polymerizable compound is preferably 2,000 to 20,000, more preferably 2,000 to 15,000, and most preferably 2,000 to 10,000.

本發明中的聚合性化合物的官能基數是指一分子中的聚合性基的數量。 就解析性的觀點而言,聚合性化合物較佳為包含至少一種含有兩個以上的聚合性基的二官能以上的聚合性化合物,更佳為包含至少一種三官能以上的聚合性化合物。 另外,就形成三維交聯結構而可提升耐熱性的方面而言,本發明中的聚合性化合物較佳為包含至少一種三官能以上的聚合性化合物。另外,亦可為二官能以下的聚合性化合物與三官能以上的聚合性化合物的混合物。The number of functional groups of the polymerizable compound in the present invention means the number of polymerizable groups in one molecule. From an analytical viewpoint, the polymerizable compound preferably contains at least one difunctional or more polymerizable compound containing two or more polymerizable groups, and more preferably contains at least one trifunctional or more polymerizable compound. Moreover, it is preferable that the polymerizable compound in this invention contains at least 1 type of polymerizable compound more than trifunctional from the point which can form a three-dimensional crosslinked structure and can improve heat resistance. In addition, it may be a mixture of a difunctional or lower polymerizable compound and a trifunctional or higher polymerizable compound.

<<<具有乙烯性不飽和鍵的化合物>>> 作為具有乙烯性不飽和鍵的基,較佳為苯乙烯基、乙烯基、(甲基)丙烯醯基及(甲基)烯丙基,更佳為(甲基)丙烯醯基。<<<Compounds with ethylenically unsaturated bonds>>> As a group which has an ethylenically unsaturated bond, a styryl group, a vinyl group, a (meth)acryloyl group, and a (meth)allyl group are preferable, and a (meth)acryloyl group is more preferable.

作為具有乙烯性不飽和鍵的化合物的具體例,可列舉不飽和羧酸(例如丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、順丁烯二酸等)或其酯類、醯胺類、以及該些的多聚體,較佳為不飽和羧酸與多元醇化合物的酯、及不飽和羧酸與多元胺化合物的醯胺類、以及該些的多聚體。另外,亦可適宜地使用具有羥基或胺基、巰基等親核性取代基的不飽和羧酸酯或者醯胺類、與單官能或多官能異氰酸酯類或環氧類的加成反應物,或者與單官能或多官能的羧酸的脫水縮合反應物等。另外,具有異氰酸酯基或環氧基等親電子性取代基的不飽和羧酸酯或者醯胺類與單官能或多官能的醇類、胺類、硫醇類的加成反應物,進而,具有鹵基或甲苯磺醯氧基等脫離性取代基的不飽和羧酸酯或者醯胺類與單官能或多官能的醇類、胺類、硫醇類的取代反應物亦適宜。另外,作為其他例,亦可使用替換成不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯基醚、烯丙基醚等的化合物群組來代替所述不飽和羧酸。Specific examples of the compound having an ethylenically unsaturated bond include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or esters thereof, The amides and the polymers thereof are preferably esters of unsaturated carboxylic acids and polyol compounds, amides of unsaturated carboxylic acids and polyamine compounds, and polymers thereof. In addition, unsaturated carboxylic acid esters or amides having nucleophilic substituents such as hydroxyl groups, amine groups, and mercapto groups, and addition reactants with monofunctional or polyfunctional isocyanates or epoxides can also be suitably used, or Dehydration condensation reaction products with monofunctional or polyfunctional carboxylic acids, etc. In addition, an addition reaction product of an unsaturated carboxylic acid ester or amide having an electrophilic substituent such as an isocyanate group or an epoxy group and a monofunctional or polyfunctional alcohol, amine, or thiol, and further, having Substitution reaction products of unsaturated carboxylic acid esters or amides with a releasable substituent such as a halogen group or a tosyloxy group, and monofunctional or polyfunctional alcohols, amines, and thiols are also suitable. In addition, as another example, a compound group substituted with vinylbenzene derivatives such as unsaturated phosphonic acid and styrene, vinyl ether, allyl ether, and the like may be used instead of the unsaturated carboxylic acid.

作為多元醇化合物與不飽和羧酸的酯的單體的具體例,作為丙烯酸酯,可列舉:乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、1,3-丁二醇二丙烯酸酯、四亞甲基二醇二丙烯酸酯、丙二醇二丙烯酸酯、新戊二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三羥甲基乙烷三丙烯酸酯、己二醇二丙烯酸酯、1,4-環己二醇二丙烯酸酯、四乙二醇二丙烯酸酯、季戊四醇二丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇二丙烯酸酯、二季戊四醇六丙烯酸酯、季戊四醇四丙烯酸酯、山梨糖醇三丙烯酸酯、山梨糖醇四丙烯酸酯、山梨糖醇五丙烯酸酯、山梨糖醇六丙烯酸酯、三(丙烯醯氧基乙基)異三聚氰酸酯、異三聚氰酸環氧乙烷改質三丙烯酸酯、聚酯丙烯酸酯寡聚物等。As a specific example of the monomer of the ester of a polyhydric alcohol compound and an unsaturated carboxylic acid, as an acrylate, ethylene glycol diacrylate, triethylene glycol diacrylate, 1, 3- butanediol diacrylate are mentioned. , tetramethylene glycol diacrylate, propylene glycol diacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, trimethylolpropane tris(acrylooxypropyl) ether, trimethylolpropane triacrylate Methylolethane triacrylate, hexanediol diacrylate, 1,4-cyclohexanediol diacrylate, tetraethylene glycol diacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, dipentaerythritol diacrylate Esters, dipentaerythritol hexaacrylate, pentaerythritol tetraacrylate, sorbitol triacrylate, sorbitol tetraacrylate, sorbitol pentaacrylate, sorbitol hexaacrylate, tris(acryloyloxyethyl) Isocyanurate, isocyanuric ethylene oxide modified triacrylate, polyester acrylate oligomer, etc.

作為甲基丙烯酸酯,可列舉:四亞甲基二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、新戊二醇二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、三羥甲基乙烷三甲基丙烯酸酯、乙二醇二甲基丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、己二醇二甲基丙烯酸酯、季戊四醇二甲基丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇二甲基丙烯酸酯、二季戊四醇六甲基丙烯酸酯、山梨糖醇三甲基丙烯酸酯、山梨糖醇四甲基丙烯酸酯、雙〔對(3-甲基丙烯醯氧基-2-羥基丙氧基)苯基〕二甲基甲烷、雙-〔對(甲基丙烯醯氧基乙氧基)苯基〕二甲基甲烷等。Examples of methacrylates include: tetramethylene glycol dimethacrylate, triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, trimethylolpropane trimethacrylate Esters, Trimethylolethane Trimethacrylate, Ethylene Glycol Dimethacrylate, 1,3-Butanediol Dimethacrylate, Hexylene Glycol Dimethacrylate, Pentaerythritol Dimethacrylate ester, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, bis[p-(3-methacryloyloxy-2-hydroxypropoxy)phenyl]dimethylmethane, bis-[p-(methacryloyloxyethoxy)phenyl]dimethylmethane Wait.

作為衣康酸酯,可列舉:乙二醇二衣康酸酯、丙二醇二衣康酸酯、1,3-丁二醇二衣康酸酯、1,4-丁二醇二衣康酸酯、四亞甲基二醇二衣康酸酯、季戊四醇二衣康酸酯、山梨糖醇四衣康酸酯等。As the itaconate ester, ethylene glycol diitaconate, propylene glycol diitaconate, 1,3-butanediol diitaconate, 1,4-butanediol diitaconate can be mentioned. , tetramethylene glycol diitaconate, pentaerythritol diitaconate, sorbitol tetraitaconate, etc.

作為巴豆酸酯,可列舉:乙二醇二巴豆酸酯、四亞甲基二醇二巴豆酸酯、季戊四醇二巴豆酸酯、山梨糖醇四-二巴豆酸酯等。Examples of the crotonate include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, sorbitol tetra-dicrotonate, and the like.

作為異巴豆酸酯,可列舉:乙二醇二異巴豆酸酯、季戊四醇二異巴豆酸酯、山梨糖醇四異巴豆酸酯等。As isocrotonate, ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, sorbitol tetraisocrotonate, etc. are mentioned.

作為順丁烯二酸酯,可列舉:乙二醇二順丁烯二酸酯、三乙二醇二順丁烯二酸酯、季戊四醇二順丁烯二酸酯、山梨糖醇四順丁烯二酸酯等。Examples of maleic acid esters include ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, and sorbitan tetramaleate Diester, etc.

作為其他酯的例子,例如亦可適宜地使用日本專利特公昭46-27926號公報、日本專利特公昭51-47334號公報、日本專利特開昭57-196231號公報中所記載的脂肪族醇系酯類,或日本專利特開昭59-5240號公報、日本專利特開昭59-5241號公報、日本專利特開平2-226149號公報中所記載的具有芳香族系骨架者,日本專利特開平1-165613號公報中所記載的含有胺基者等。As examples of other esters, for example, aliphatic alcohols described in Japanese Patent Laid-Open No. 46-27926, Japanese Patent Laid-Open No. 51-47334, and Japanese Patent Laid-Open No. 57-196231 can also be suitably used. Esters, or those with aromatic skeletons described in Japanese Patent Laid-Open No. 59-5240, Japanese Patent Laid-Open No. 59-5241, and Japanese Patent Laid-Open No. Hei 2-226149, Japanese Patent Laid-Open No. 2-226149 Those containing an amine group described in Gazette 1-165613, and the like.

另外,作為多元胺化合物與不飽和羧酸的醯胺的單體的具體例,有亞甲基雙-丙烯醯胺、亞甲基雙-甲基丙烯醯胺、1,6-六亞甲基雙-丙烯醯胺、1,6-六亞甲基雙-甲基丙烯醯胺、二乙三胺三丙烯醯胺、伸二甲苯基雙丙烯醯胺、伸二甲苯基雙甲基丙烯醯胺等。In addition, as a specific example of the monomer of polyamine compound and amide of unsaturated carboxylic acid, there are methylenebis-acrylamide, methylenebis-methacrylamide, 1,6-hexamethylene Bis-acrylamide, 1,6-hexamethylene bis-methacrylamide, diethylenetriamine triacrylamide, xylylene bisacrylamide, xylylene bis-methacrylamide and the like.

作為其他較佳的醯胺系單體的例子,可列舉日本專利特公昭54-21726號公報中所記載的具有伸環己基結構者。As an example of another preferable amide-type monomer, what has a cyclohexylene structure as described in Unexamined-Japanese-Patent No. 54-21726 is mentioned.

另外,利用異氰酸酯與羥基的加成反應所製造的胺基甲酸酯系加成聚合性單體亦適宜,作為此種具體例,例如可列舉:日本專利特公昭48-41708號公報中所記載的於一分子中具有2個以上的異氰酸酯基的聚異氰酸酯化合物中加成由下述式所表示的含有羥基的乙烯基單體而成的一分子中包含2個以上的聚合性乙烯基的乙烯基胺基甲酸酯化合物等。 CH2 =C(R4 )COOCH2 CH(R5 )OH (其中,R4 及R5 表示H或CH3 ) 另外,如日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類,或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報中所記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類亦適宜。In addition, a urethane-based addition polymerizable monomer produced by an addition reaction of an isocyanate and a hydroxyl group is also suitable, and as such a specific example, the description in Japanese Patent Laid-Open No. 48-41708 can be mentioned, for example. Ethylene containing two or more polymerizable vinyl groups in one molecule obtained by adding a hydroxyl group-containing vinyl monomer represented by the following formula to a polyisocyanate compound having two or more isocyanate groups in one molecule carbamate compounds, etc. CH 2 =C(R 4 )COOCH 2 CH(R 5 )OH (wherein, R 4 and R 5 represent H or CH 3 ) In addition, for example, Japanese Patent Laid-Open No. Sho 51-37193, Japanese Patent Hei 2- Acrylic urethanes described in Japanese Patent Publication No. 32293, Japanese Patent Publication No. 2-16765, or Japanese Patent Publication No. 58-49860, Japanese Patent Publication No. 56-17654, and Japanese Patent Publication No. 62 The urethane compounds having an ethylene oxide-based skeleton described in Japanese Patent Publication No. 39417 and Japanese Patent Publication No. Sho 62-39418 are also suitable.

另外,於本發明中,作為具有乙烯性不飽和鍵的化合物,亦可適宜地使用日本專利特開2009-288705號公報的段落號0095~段落號0108中所記載的化合物。In addition, in the present invention, as the compound having an ethylenically unsaturated bond, the compounds described in paragraphs 0095 to 0108 of JP 2009-288705 A can also be suitably used.

另外,作為具有乙烯性不飽和鍵的化合物,於常壓下具有100℃以上的沸點的化合物亦較佳。作為其例,可列舉:聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基乙酯等單官能的丙烯酸酯或甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成者,如日本專利特公昭48-41708號、日本專利特公昭50-6034號、日本專利特開昭51-37193號的各公報中所記載的(甲基)丙烯酸胺基甲酸酯類,日本專利特開昭48-64183號、日本專利特公昭49-43191號、日本專利特公昭52-30490號的各公報中所記載的聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的環氧丙烯酸酯類等多官能的丙烯酸酯或甲基丙烯酸酯、及該些的混合物。另外,日本專利特開2008-292970號公報的段落號0254~段落號0257中所記載的化合物亦適宜。另外,亦可列舉使多官能羧酸與(甲基)丙烯酸縮水甘油酯等具有環狀醚基及乙烯性不飽和基的化合物進行反應而獲得的多官能(甲基)丙烯酸酯等。 另外,作為其他較佳的具有乙烯性不飽和鍵的化合物,亦可使用日本專利特開2010-160418號公報、日本專利特開2010-129825號公報、日本專利第4364216號公報等中所記載的具有茀環、且具有兩個以上的含有乙烯性不飽和鍵的基的化合物,卡多(cardo)樹脂。 進而,作為其他例,亦可列舉日本專利特公昭46-43946號公報、日本專利特公平1-40337號公報、日本專利特公平1-40336號公報中所記載的特定的不飽和化合物、或日本專利特開平2-25493號公報中所記載的乙烯基膦酸系化合物等。另外,於某種情況下,適宜地使用日本專利特開昭61-22048號公報中所記載的包含全氟烷基的結構。進而,亦可使用「日本接著協會誌」vol.20、No.7、300頁~308頁(1984年)中作為光聚合性單體及寡聚物所介紹者。Moreover, as a compound which has an ethylenically unsaturated bond, the compound which has a boiling point of 100 degreeC or more under normal pressure is also preferable. Examples thereof include monofunctional acrylates or methacrylates such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate. ; Polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra (Meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, hexanediol (meth)acrylate, trimethylolpropane tris(acryloyloxypropyl) (meth)acrylic acid after adding ethylene oxide or propylene oxide to polyfunctional alcohol Those obtained by esterification, such as (meth)acrylate urethanes described in Japanese Patent Laid-Open No. 48-41708, Japanese Patent Laid-Open No. 50-6034, and Japanese Patent Laid-Open No. 51-37193 Types, polyester acrylates described in Japanese Patent Laid-Open No. 48-64183, Japanese Patent Laid-Open No. 49-43191, and Japanese Patent Laid-Open No. 52-30490, as epoxy resins and (methyl) ) Polyfunctional acrylates or methacrylates such as epoxy acrylates, which are reaction products of acrylic acid, and mixtures thereof. In addition, compounds described in paragraphs 0254 to 0257 of JP-A-2008-292970 are also suitable. Moreover, the polyfunctional (meth)acrylate etc. obtained by making a polyfunctional carboxylic acid react with a compound which has a cyclic ether group and an ethylenically unsaturated group, such as glycidyl (meth)acrylate, can also be mentioned. In addition, as other preferred compounds having an ethylenically unsaturated bond, those described in Japanese Patent Laid-Open No. 2010-160418, Japanese Patent Laid-Open No. 2010-129825, and Japanese Patent No. 4364216 can also be used. A compound having a perylene ring and having two or more ethylenically unsaturated bond-containing groups, a cardo resin. Furthermore, as other examples, the specific unsaturated compounds described in Japanese Patent Publication No. 46-43946, Japanese Patent Publication No. 1-40337, Japanese Patent Publication No. 1-40336, or Japanese Patent Publication No. 1-40336 can also be cited. Vinylphosphonic acid-based compounds and the like described in Japanese Patent Laid-Open No. 2-25493. Moreover, in some cases, the structure containing a perfluoroalkyl group described in Unexamined-Japanese-Patent No. 61-22048 is used suitably. Furthermore, those described as photopolymerizable monomers and oligomers in "Journal of the Japan Adhesion Association" vol. 20, No. 7, pp. 300 to 308 (1984) can also be used.

除所述以外,亦可適宜地使用由下述式(MO-1)~式(MO-5)所表示的具有乙烯性不飽和鍵的化合物。再者,式中,當T為氧基伸烷基時,碳原子側的末端與R鍵結。In addition to the above, compounds having an ethylenically unsaturated bond represented by the following formulae (MO-1) to (MO-5) can also be suitably used. In addition, in the formula, when T is an oxyalkylene group, the terminal on the carbon atom side is bonded to R.

[化29]

Figure 02_image040
[Chemical 29]
Figure 02_image040

[化30]

Figure 02_image042
[Chemical 30]
Figure 02_image042

所述式中,n為0~14的整數,m為0~8的整數。一分子內存在多個的R、T可相同,亦可各不相同。 於由所述式(MO-1)~式(MO-5)所表示的聚合性化合物的各個中,多個R中的至少一個表示由-OC(=O)CH=CH2 、或-OC(=O)C(CH3 )=CH2 所表示的基。 於本發明中,作為由所述式(MO-1)~式(MO-5)所表示的具有乙烯性不飽和鍵的化合物的具體例,亦可適宜地使用日本專利特開2007-269779號公報的段落號0248~段落號0251中所記載的化合物。In the above formula, n is an integer of 0-14, and m is an integer of 0-8. A plurality of R and T in one molecule may be the same or different. In each of the polymerizable compounds represented by the above formulae (MO-1) to (MO-5), at least one of the plurality of R represents -OC(=O)CH=CH 2 , or -OC A group represented by (=O)C(CH 3 )=CH 2 . In the present invention, Japanese Patent Laid-Open No. 2007-269779 can also be suitably used as a specific example of the compound having an ethylenically unsaturated bond represented by the above formulae (MO-1) to (MO-5). Compounds described in paragraphs 0248 to 0251 of the gazette.

另外,於日本專利特開平10-62986號公報中作為式(1)及式(2)且與其具體例一同記載的如下化合物亦可用作聚合性化合物,該化合物是於多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。In addition, the following compounds described in Japanese Patent Laid-Open No. 10-62986 as formulas (1) and (2) together with specific examples thereof can also be used as polymerizable compounds, which are added to polyfunctional alcohols. A compound obtained by (meth)acrylic esterification after ethylene oxide or propylene oxide.

進而,亦可採用日本專利特開2015-187211號公報的段落號0104~段落號0131中所記載的化合物,將該些內容併入本說明書中。尤其,可例示日本專利特開2015-187211號公報的段落號0128~段落號0130中所記載的化合物作為較佳的形態。Furthermore, the compounds described in paragraph Nos. 0104 to 0131 of JP 2015-187211 A can also be used, and these contents are incorporated into the present specification. In particular, the compounds described in paragraphs 0128 to 0130 of JP 2015-187211 A can be exemplified as preferred embodiments.

作為具有乙烯性不飽和鍵的化合物,較佳為二季戊四醇三丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-330;日本化藥(股份)製造)、二季戊四醇四丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-320;日本化藥(股份)製造)、二季戊四醇五(甲基)丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-310;日本化藥(股份)製造)、二季戊四醇六(甲基)丙烯酸酯(市售品為卡亞拉得(KAYARAD)DPHA;日本化藥(股份)製造)、及該些的(甲基)丙烯醯基經由乙二醇殘基、丙二醇殘基而鍵結的結構的化合物。亦可使用該些的寡聚物型。 另外,亦可列舉所述式(MO-1)、式(MO-2)的季戊四醇衍生物及/或二季戊四醇衍生物作為較佳的例子。As the compound having an ethylenically unsaturated bond, dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (commercially available) The product is KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol penta(meth)acrylate (the commercial product is KAYARAD) D-310; Nippon Kayaku Co., Ltd. Pharmaceutical Co., Ltd.), dipentaerythritol hexa(meth)acrylate (commercially available as KAYARAD DPHA; Nippon Kayaku Co., Ltd.), and the (meth)acryloyl group of these A compound having a structure bonded via ethylene glycol residues and propylene glycol residues. Oligomeric forms of these can also be used. Moreover, the pentaerythritol derivative and/or dipentaerythritol derivative of the said formula (MO-1) and formula (MO-2) can also be mentioned as a preferable example.

作為聚合性化合物的市售品,例如可列舉:作為具有4個伸乙氧基鏈的四官能丙烯酸酯的SR-494、作為具有4個伸乙氧基鏈的二官能甲基丙烯酸酯的SR-209(以上為日本沙多瑪(Sartomer Japan)(股份)製造),作為具有6個伸戊氧基鏈的六官能丙烯酸酯的DPCA-60、作為具有3個伸異丁氧基鏈的三官能丙烯酸酯的TPA-330(以上為日本化藥(股份)製造),胺基甲酸酯寡聚物UAS-10、UAB-140(以上為山陽國策紙漿(Sanyo Kokusaku Pulp)(股份)製造),NK酯(NK ESTER)M-40G、NK酯(NK ESTER)4G、NK酯(NK ESTER)M-9300、NK酯(NK ESTER)A-9300、UA-7200(以上為新中村化學工業(股份)製造),DPHA-40H(日本化藥(股份)製造),UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(以上為共榮社化學(股份)製造),布蘭莫(Blemmer)PME400(日油(股份)製造)等。Commercially available products of the polymerizable compound include, for example, SR-494 which is a tetrafunctional acrylate having four ethoxy-extended chains, and SR-494 which is a difunctional methacrylate having four ethoxy-extended chains. -209 (the above are manufactured by Sartomer Japan Co., Ltd.), as DPCA-60 as a hexafunctional acrylate having 6 pentoxy-extended chains, as 3-isobutoxy-extended chains as DPCA-60 Functional acrylate TPA-330 (the above are manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers UAS-10 and UAB-140 (the above are manufactured by Sanyo Kokusaku Pulp Co., Ltd.) , NK Ester (NK Ester) M-40G, NK Ester (NK Ester) 4G, NK Ester (NK Ester) M-9300, NK Ester (NK Ester) A-9300, UA-7200 (the above are New Nakamura Chemical Industry ( Cos ), Blemmer PME400 (manufactured by NOF Corporation), etc.

作為具有乙烯性不飽和鍵的化合物,如日本專利特公昭48-41708號公報、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類,或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報中所記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類亦適宜。進而,作為聚合性化合物,亦可使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫醚基結構的加成聚合性單體類。As a compound having an ethylenically unsaturated bond, for example, Japanese Patent Laid-Open No. 48-41708, Japanese Patent Laid-Open No. 51-37193, Japanese Patent Laid-Open No. 2-32293, and Japanese Patent Laid-Open No. 2-16765 Acrylic urethanes described in the gazettes, or Japanese Patent Publication No. 58-49860, Japanese Patent Publication No. 56-17654, Japanese Patent Publication No. 62-39417, and Japanese Patent Publication No. 62-39418 Urethane compounds having an ethylene oxide-based skeleton described in Gazette No. 1 are also suitable. Furthermore, as the polymerizable compound, those described in Japanese Patent Laid-Open No. 63-277653, Japanese Patent Laid-Open No. 63-260909, and Japanese Patent Laid-Open No. Hei 1-105238 having an amino group in the molecule can also be used. Structure or thioether-based addition polymerizable monomers.

具有乙烯性不飽和鍵的化合物亦可為具有羧基、磺酸基、磷酸基等酸基的多官能單體。具有酸基的多官能單體較佳為脂肪族多羥基化合物與不飽和羧酸的酯,更佳為使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐進行反應而具有酸基的多官能單體,特佳為於該酯中,脂肪族多羥基化合物為季戊四醇及/或二季戊四醇者。作為市售品,例如可列舉作為東亞合成(股份)製造的多元酸改質丙烯酸寡聚物的M-510、M-520等。 具有酸基的多官能單體可單獨使用一種,亦可將兩種以上混合使用。另外,視需要,亦可併用不具有酸基的多官能單體與具有酸基的多官能單體。 具有酸基的多官能單體的較佳的酸價為0.1 mgKOH/g~40 mgKOH/g,特佳為5 mgKOH/g~30 mgKOH/g。若多官能單體的酸價為所述範圍,則製造或處理性優異,進而,顯影性優異。另外,聚合性良好。The compound having an ethylenically unsaturated bond may also be a polyfunctional monomer having an acid group such as a carboxyl group, a sulfonic acid group, and a phosphoric acid group. The polyfunctional monomer having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably has an acid group by reacting an unreacted hydroxyl group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic acid anhydride The polyfunctional monomer is particularly preferably one in which the aliphatic polyhydroxy compound is pentaerythritol and/or dipentaerythritol in the ester. As a commercial item, M-510, M-520 etc. which are polybasic acid-modified acrylic oligomers manufactured by Toagosei Co., Ltd. are mentioned, for example. The polyfunctional monomer which has an acid group may be used individually by 1 type, and may be used in mixture of 2 or more types. Moreover, you may use together the polyfunctional monomer which does not have an acid group, and the polyfunctional monomer which has an acid group as needed. The preferable acid value of the polyfunctional monomer having an acid group is 0.1 mgKOH/g to 40 mgKOH/g, and particularly preferably 5 mgKOH/g to 30 mgKOH/g. When the acid value of the polyfunctional monomer is in the above range, the production or handling properties are excellent, and furthermore, the developability is excellent. In addition, the polymerizability is good.

此種具有己內酯結構的聚合性化合物例如作為卡亞拉得(KAYARAD)DPCA系列而由日本化藥(股份)市售,可列舉:DPCA-20(所述式(C)~式(E)中,m=1,由式(D)所表示的基的數量=2,R1 均為氫原子的化合物)、DPCA-30(所述式(C)~式(E)中,m=1,由式(D)所表示的基的數量=3,R1 均為氫原子的化合物)、DPCA-60(所述式(C)~式(E)中,m=1,由式(D)所表示的基的數量=6,R1 均為氫原子的化合物)、DPCA-120(所述式(C)~式(E)中,m=2,由式(D)所表示的基的數量=6,R1 均為氫原子的化合物)等。 於本發明中,具有己內酯結構與乙烯性不飽和鍵的化合物可單獨或將兩種以上混合使用。The polymerizable compound having such a caprolactone structure is marketed by Nippon Kayaku Co., Ltd. as, for example, the KAYARAD DPCA series, and examples thereof include DPCA-20 (the above-mentioned formula (C) to formula (E) ), m=1, the number of groups represented by the formula (D)=2, and R 1 is a compound in which both are hydrogen atoms), DPCA-30 (in the above formulas (C) to (E), m= 1. The number of groups represented by the formula (D)=3, and R 1 is a compound in which both are hydrogen atoms), DPCA-60 (in the above formulas (C) to (E), m=1, and from the formula ( D) The number of groups represented by = 6, and R 1 is a compound of hydrogen atoms), DPCA-120 (in the above formulas (C) to (E), m=2, represented by formula (D) The number of bases = 6, and R 1 is a compound of hydrogen atoms) and so on. In the present invention, the compound having a caprolactone structure and an ethylenically unsaturated bond may be used alone or in combination of two or more.

於組成物中,就良好的聚合性與耐熱性的觀點而言,相對於組成物的總固體成分,具有乙烯性不飽和鍵的化合物的含量較佳為1質量%~50質量%。下限更佳為5質量%以上。上限更佳為30質量%以下。具有乙烯性不飽和鍵的化合物可單獨使用一種,亦可將兩種以上混合使用。 另外,聚醯亞胺前驅物等與具有乙烯性不飽和鍵的化合物的質量比例(聚醯亞胺前驅物等/聚合性化合物)較佳為98/2~10/90,更佳為95/5~30/70,最佳為90/10~50/50。若聚醯亞胺前驅物等與具有乙烯性不飽和鍵的化合物的質量比例為所述範圍,則可形成聚合性及耐熱性更優異的硬化膜。In the composition, from the viewpoint of good polymerizability and heat resistance, the content of the compound having an ethylenically unsaturated bond is preferably 1% by mass to 50% by mass relative to the total solid content of the composition. The lower limit is more preferably 5 mass % or more. The upper limit is more preferably 30 mass % or less. The compound which has an ethylenically unsaturated bond may be used individually by 1 type, and may be used in mixture of 2 or more types. In addition, the mass ratio of the polyimide precursor and the like to the compound having an ethylenically unsaturated bond (polyimide precursor and the like/polymerizable compound) is preferably 98/2 to 10/90, more preferably 95/ 5~30/70, the best is 90/10~50/50. If the mass ratio of the polyimide precursor etc. and the compound which has an ethylenically unsaturated bond is the said range, the cured film which is more excellent in polymerizability and heat resistance can be formed.

<<<具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物>>> 作為具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物,較佳為由下述式(AM1)所表示的化合物。<<<Compounds with hydroxymethyl, alkoxymethyl or acyloxymethyl>>> As a compound which has a hydroxymethyl group, an alkoxymethyl group, or an alkoxymethyl group, the compound represented by following formula (AM1) is preferable.

(AM1) [化31]

Figure 02_image044
(式中,t表示1~20的整數,R4 表示碳數1~200的t價的有機基,R5 表示由下述式(AM2)或下述式(AM3)所表示的基)(AM1) [Chemical 31]
Figure 02_image044
(in the formula, t represents an integer of 1 to 20, R 4 represents a t-valent organic group having 1 to 200 carbon atoms, and R 5 represents a group represented by the following formula (AM2) or the following formula (AM3))

式(AM2)     式(AM3) [化32]

Figure 02_image046
Figure 02_image048
(式中,R6 表示羥基或碳數1~10的有機基)Formula (AM2) Formula (AM3) [Chemical 32]
Figure 02_image046
Figure 02_image048
(In the formula, R 6 represents a hydroxyl group or an organic group with 1 to 10 carbon atoms)

相對於聚醯亞胺前驅物等100質量份,由式(AM1)所表示的化合物較佳為5質量份以上、40質量份以下。更佳為10質量份以上、35質量份以下。另外,亦較佳為於所有聚合性化合物中,含有10質量%以上、90質量%以下的由下述式(AM4)所表示的化合物,且於所有熱交聯劑中含有10質量%以上、90質量%以下的由下述式(AM5)所表示的化合物。The compound represented by the formula (AM1) is preferably 5 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass of the polyimide precursor or the like. More preferably, it is 10 mass parts or more and 35 mass parts or less. In addition, it is also preferable to contain 10 mass % or more and 90 mass % or less of the compound represented by the following formula (AM4) in all the polymerizable compounds, and 10 mass % or more, 90 mass % or less of the compound represented by the following formula (AM5).

(AM4) [化33]

Figure 02_image050
(式中,R4 表示碳數1~200的二價的有機基,R5 表示由下述式(AM2)或下述式(AM3)所表示的基)(AM4) [Chemical 33]
Figure 02_image050
(In the formula, R 4 represents a divalent organic group having 1 to 200 carbon atoms, and R 5 represents a group represented by the following formula (AM2) or the following formula (AM3))

(AM5) [化34]

Figure 02_image052
(式中,u表示3~8的整數,R4 表示碳數1~200的u價的有機基,R5 表示由下述式(AM2)或下述式(AM3)所表示的基)(AM5) [Chemical 34]
Figure 02_image052
(in the formula, u represents an integer of 3 to 8, R 4 represents a u-valent organic group having 1 to 200 carbon atoms, and R 5 represents a group represented by the following formula (AM2) or the following formula (AM3))

式(AM2)     式(AM3) [化35]

Figure 02_image046
Figure 02_image054
(式中,R6 表示羥基或碳數1~10的有機基)Formula (AM2) Formula (AM3) [Chemical 35]
Figure 02_image046
Figure 02_image054
(In the formula, R 6 represents a hydroxyl group or an organic group with 1 to 10 carbon atoms)

藉由設為所述範圍,當於具有凹凸的基板上將組成物硬化時,產生裂紋的情況變得更少。圖案加工性優異,且可具有5%質量減少溫度成為350℃以上、更佳為成為380℃以上的高耐熱性。作為由式(AM4)所表示的化合物的具體例,可列舉:46DMOC、46DMOEP(以上為商品名,旭有機材工業(股份)製造)、DML-MBPC、DML-MBOC、DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、二羥甲基雙OC-P(dimethylolBisOC-P)、DML-PFP、DML-PSBP、DML-MTrisPC(以上為商品名,本州化學工業(股份)製造)、尼卡拉克(NIKALAC)MX-290(以上為商品名,三和化學(股份)製造)、2,6-二甲氧基甲基-4-第三丁基苯酚、2,6-二甲氧基甲基-對甲酚、2,6-二乙醯氧基甲基-對甲酚等。By setting it as the said range, when a composition is hardened on the board|substrate which has unevenness|corrugation, it becomes less that cracks generate|occur|produce. It is excellent in pattern workability, and can have high heat resistance such that the 5% mass reduction temperature is 350°C or higher, more preferably 380°C or higher. Specific examples of the compound represented by the formula (AM4) include 46DMOC, 46DMOEP (the above are trade names, manufactured by Asahi Organic Materials Co., Ltd.), DML-MBPC, DML-MBOC, DML-OCHP, DML- PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC (the above are Trade name, Honshu Chemical Industry Co., Ltd.), NIKALAC MX-290 (the above are trade names, Sanwa Chemical Co., Ltd.), 2,6-dimethoxymethyl-4-th Tributylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diethyloxymethyl-p-cresol, etc.

另外,作為由式(AM5)所表示的化合物的具體例,可列舉:TriML-P、TriML-35XL、TML-HQ、TML-BP、TML-pp-BPF、TML-BPA、TMOM-BP、HML-TPPHBA、HML-TPHAP、HMOM-TPPHBA、HMOM-TPHAP(以上為商品名,本州化學工業(股份)製造)、TM-BIP-A(商品名,旭有機材工業(股份)製造)、尼卡拉克(NIKALAC)MX-280、尼卡拉克(NIKALAC)MX-270、尼卡拉克(NIKALAC)MW-100LM(以上為商品名,三和化學(股份)製造)。In addition, specific examples of the compound represented by the formula (AM5) include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, HML -TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (the above are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), TM-BIP-A (trade name, manufactured by Asahi Organic Materials Industry Co., Ltd.), Nika NIKALAC MX-280, NIKALAC MX-270, NIKALAC MW-100LM (the above are trade names, manufactured by Sanwa Chemical Co., Ltd.).

<<<環氧化合物(具有環氧基的化合物)>>> 作為環氧化合物,較佳為於一分子中具有兩個以上環氧基的化合物。環氧基於200℃以下進行交聯反應,且不會發生由交聯所引起的脫水反應,故難以發生膜收縮。因此,對組成物的低溫硬化及低翹曲化而言,有效的是含有環氧化合物。<<<Epoxy compound (compound having epoxy group)>>> The epoxy compound is preferably a compound having two or more epoxy groups in one molecule. The epoxy base undergoes a cross-linking reaction at 200° C. or lower, and does not undergo a dehydration reaction caused by cross-linking, so film shrinkage hardly occurs. Therefore, it is effective to contain an epoxy compound for low-temperature hardening and warpage reduction of the composition.

環氧化合物較佳為含有聚環氧乙烷基。藉此,可進一步降低彈性模數,且進一步實現低翹曲化。另外,可獲得因柔軟性高而伸長率等亦優異的硬化膜。聚環氧乙烷基是指環氧乙烷的重複單元數量為2以上者,且較佳為重複單元數量為2~15。The epoxy compound preferably contains a polyethylene oxide group. Thereby, the elastic modulus can be further reduced, and the warpage can be further reduced. Moreover, since flexibility is high, the cured film which is excellent also in elongation etc. can be obtained. The polyethylene oxide group means that the number of repeating units of ethylene oxide is 2 or more, and the number of repeating units is preferably 2 to 15.

作為環氧化合物的例子,可列舉:雙酚A型環氧樹脂;雙酚F型環氧樹脂;丙二醇二縮水甘油基醚等烷二醇型環氧樹脂;聚丙二醇二縮水甘油基醚等聚烷二醇型環氧樹脂;聚甲基(縮水甘油氧基丙基)矽氧烷等含有環氧基的矽酮等,但並不限定於該些例子。具體而言,可列舉:艾比克隆(Epiclon)(註冊商標)850-S、艾比克隆(Epiclon)(註冊商標)HP-4032、艾比克隆(Epiclon)(註冊商標)HP-7200、艾比克隆(Epiclon)(註冊商標)HP-820、艾比克隆(Epiclon)(註冊商標)HP-4700、艾比克隆(Epiclon)(註冊商標)EXA-4710、艾比克隆(Epiclon)(註冊商標)HP-4770、艾比克隆(Epiclon)(註冊商標)EXA-859CRP、艾比克隆(Epiclon)(註冊商標)EXA-1514、艾比克隆(Epiclon)(註冊商標)EXA-4880、艾比克隆(Epiclon)(註冊商標)EXA-4850-150、艾比克隆(Epiclon)EXA-4850-1000、艾比克隆(Epiclon)(註冊商標)EXA-4816、艾比克隆(Epiclon)(註冊商標)EXA-4822(以上為商品名,迪愛生(DIC)(股份)製造)、理化樹脂(註冊商標)BEO-60E(商品名,新日本理化(股份)製造),EP-4003S、EP-4000S(以上為商品名,艾迪科(股份)製造)等。其中,就低翹曲及耐熱性優異的方面而言,較佳為含有聚環氧乙烷基的環氧樹脂。例如,艾比克隆(Epiclon)(註冊商標)EXA-4880、艾比克隆(Epiclon)(註冊商標)EXA-4822、理化樹脂(註冊商標)BEO-60E因含有聚環氧乙烷基而較佳。Examples of epoxy compounds include bisphenol A type epoxy resins; bisphenol F type epoxy resins; alkylene glycol type epoxy resins such as propylene glycol diglycidyl ether; Alkanediol-type epoxy resins; epoxy-containing silicones such as polymethyl(glycidoxypropyl)siloxane, etc., are not limited to these examples. Specifically, Epiclon (registered trademark) 850-S, Epiclon (registered trademark) HP-4032, Epiclon (registered trademark) HP-7200, Epiclon (registered trademark) HP-7200, Epiclon (registered trademark) HP-820, Epiclon (registered trademark) HP-4700, Epiclon (registered trademark) EXA-4710, Epiclon (registered trademark) ) HP-4770, Epiclon (registered trademark) EXA-859CRP, Epiclon (registered trademark) EXA-1514, Epiclon (registered trademark) EXA-4880, Epiclon (registered trademark) EXA-4880 (Epiclon) (registered trademark) EXA-4850-150, Epiclon (Epiclon) EXA-4850-1000, Epiclon (registered trademark) EXA-4816, Epiclon (registered trademark) EXA -4822 (trade name above, manufactured by DIC), Physicochemical resin (registered trademark) BEO-60E (trade name, manufactured by Nippon Chemical Corporation), EP-4003S, EP-4000S (above It is a trade name, manufactured by Adico (stock), etc. Among them, epoxy resins containing polyethylene oxide groups are preferred in terms of low warpage and excellent heat resistance. For example, Epiclon (registered trademark) EXA-4880, Epiclon (registered trademark) EXA-4822, and physicochemical resin (registered trademark) BEO-60E are preferable because they contain polyethylene oxide groups. .

相對於聚醯亞胺前驅物等100質量份,環氧化合物的調配量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。調配量為5質量份以上時,可進一步抑制硬化膜的翹曲,為50質量份以下時,可進一步抑制由固化時的回流所引起的圖案掩埋。The compounding amount of the epoxy compound is preferably 5 parts by mass to 50 parts by mass, more preferably 10 parts by mass to 50 parts by mass, and still more preferably 10 parts by mass to 40 parts by mass relative to 100 parts by mass of the polyimide precursor, etc. parts by mass. When the compounding amount is 5 parts by mass or more, the warpage of the cured film can be further suppressed, and when it is 50 parts by mass or less, pattern burying by reflow at the time of curing can be further suppressed.

<<<氧雜環丁烷化合物(具有氧雜環丁基的化合物)>>> 作為氧雜環丁烷化合物,可列舉:於一分子中具有兩個以上氧雜環丁烷環的化合物、3-乙基-3-羥基甲基氧雜環丁烷、1,4-雙{[(3-乙基-3-氧雜環丁基)甲氧基]甲基}苯、3-乙基-3-(2-乙基己基甲基)氧雜環丁烷、1,4-苯二羧酸-雙[(3-乙基-3-氧雜環丁基)甲基]酯等。作為具體的例子,可適宜地使用東亞合成(股份)製造的亞龍氧雜環丁烷系列(例如OXT-121、OXT-221、OXT-191、OXT-223),該些可單獨或混合兩種以上。<<<Oxetane compound (compound having an oxetanyl group) >>> Examples of the oxetane compound include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis{ [(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4- Benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester, etc. As a specific example, Yaron oxetane series (for example, OXT-121, OXT-221, OXT-191, OXT-223) manufactured by Toagosei Co., Ltd. can be suitably used, and these can be used alone or in combination of two more than one species.

相對於聚醯亞胺前驅物等100質量份,氧雜環丁烷化合物的調配量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。The compounding amount of the oxetane compound is preferably 5 parts by mass to 50 parts by mass, more preferably 10 parts by mass to 50 parts by mass, and still more preferably 10 parts by mass with respect to 100 parts by mass of the polyimide precursor and the like parts to 40 parts by mass.

<<<苯并噁嗪化合物(具有苯并噁唑基的化合物)>>> 苯并噁嗪化合物進行由開環加成反應所引起的交聯反應,故不會發生由固化所引起的脫氣,進而由熱所引起的收縮小,因此可抑制翹曲的產生,故而較佳。<<<Benzoxazine compounds (compounds having a benzoxazole group)>>> The benzoxazine compound undergoes a cross-linking reaction caused by a ring-opening addition reaction, so there is no degassing caused by curing, and further shrinkage caused by heat is small, so the generation of warpage can be suppressed, so it is relatively good.

作為苯并噁嗪化合物的較佳的例子,可列舉:B-a型苯并噁嗪、B-m型苯并噁嗪(以上為商品名,四國化成工業(股份)製造)、聚羥基苯乙烯樹脂的苯并噁嗪加成物、苯酚酚醛清漆型二氫苯并噁嗪化合物。該些可單獨或亦可混合兩種以上。Preferable examples of the benzoxazine compound include B-a-type benzoxazine, B-m-type benzoxazine (the above are trade names, manufactured by Shikoku Chemical Industry Co., Ltd.), and polyhydroxystyrene resins. Benzoxazine adduct, phenol novolac type dihydrobenzoxazine compound. These may be used alone or in combination of two or more.

相對於聚醯亞胺前驅物等100質量份,苯并噁嗪化合物的調配量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。The compounding amount of the benzoxazine compound is preferably 5 parts by mass to 50 parts by mass, more preferably 10 parts by mass to 50 parts by mass, and still more preferably 10 parts by mass with respect to 100 parts by mass of the polyimide precursor and the like ~40 parts by mass.

<<光聚合起始劑>> 本發明中使用的組成物亦可含有光聚合起始劑。尤其藉由組成物包含光聚合起始劑,於將組成物應用於半導體晶圓等而形成組成物層後,照射光,藉此產生由自由基所引起的硬化,可使光照射部中的溶解性下降。因此,例如隔著具有僅掩蓋電極部的圖案的光罩對所述組成物層進行曝光,藉此具有可根據電極的圖案,簡便地製作溶解性不同的區域這一優點。<<Photopolymerization initiator>> The composition used in the present invention may contain a photopolymerization initiator. In particular, since the composition contains a photopolymerization initiator, after the composition is applied to a semiconductor wafer or the like to form a composition layer, light is irradiated, whereby hardening caused by radicals occurs, and the light-irradiated portion can be cured. Solubility decreased. Therefore, for example, by exposing the composition layer through a photomask having a pattern for covering only the electrode portion, there is an advantage that regions with different solubility can be easily formed according to the pattern of the electrode.

作為光聚合起始劑,只要具有藉由光而使聚合性化合物的聚合反應(交聯反應)開始的能力,則並無特別限制,可自公知的光聚合起始劑中適當選擇。例如,較佳為對於紫外線區域至可見區域的光線具有感光性者。另外,可為與經光激發的增感劑產生某種作用,而生成活性自由基的活性劑。 光聚合起始劑較佳為含有至少一種如下的化合物,該化合物於約300 nm~800 nm(較佳為330 nm~500 nm)的範圍內至少具有約50的莫耳吸光係數。化合物的莫耳吸光係數可使用公知的方法來測定。具體而言,例如較佳為藉由紫外可見分光光度計(瓦里安(Varian)公司製造的Cary-5分光光度計(spectrophotometer)),並利用乙酸乙酯溶劑,以0.01 g/L的濃度進行測定。The photopolymerization initiator is not particularly limited as long as it has the ability to initiate the polymerization reaction (crosslinking reaction) of the polymerizable compound by light, and can be appropriately selected from known photopolymerization initiators. For example, those having photosensitivity to light in the ultraviolet region to the visible region are preferred. In addition, it may be an activator that generates active radicals by interacting with a photo-excited sensitizer in a certain way. The photopolymerization initiator preferably contains at least one compound having a molar absorption coefficient of at least about 50 in the range of about 300 nm to 800 nm (preferably 330 nm to 500 nm). The molar absorptivity of a compound can be measured by a known method. Specifically, for example, it is preferable to use an ethyl acetate solvent at a concentration of 0.01 g/L by means of an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian). to measure.

作為光聚合起始劑,可無限制地使用公知的化合物,例如可列舉:鹵化烴衍生物(例如具有三嗪骨架者、具有噁二唑骨架者、具有三鹵甲基者等)、醯基氧化膦等醯基膦化合物、六芳基聯咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮基化合物、茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。As the photopolymerization initiator, known compounds can be used without limitation, and examples thereof include halogenated hydrocarbon derivatives (for example, those having a triazine skeleton, those having an oxadiazole skeleton, those having a trihalomethyl group, etc.), acyl group Acylphosphine compounds such as phosphine oxides, hexaarylbiimidazoles, oxime compounds such as oxime derivatives, organic peroxides, sulfur compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxybenzene Ethyl ketone, azo compound, azide compound, metallocene compound, organic boron compound, iron aromatic complex, etc.

作為具有三嗪骨架的鹵化烴衍生物,例如可列舉:若林等著,「日本化學學會通報(Bull. Chem. Soc. Japan)」,42,2924(1969)記載的化合物,英國專利1388492號說明書記載的化合物,日本專利特開昭53-133428號公報中所記載的化合物,德國專利3337024號說明書記載的化合物,F.C.謝弗(F. C. Schaefer)等的「有機化學期刊(J. Org. Chem.)」,29,1527(1964)記載的化合物,日本專利特開昭62-58241號公報中所記載的化合物,日本專利特開平5-281728號公報中所記載的化合物,日本專利特開平5-34920號公報中所記載的化合物,美國專利第4212976號說明書中所記載的化合物等。Examples of halogenated hydrocarbon derivatives having a triazine skeleton include compounds described in Wakabayashi et al., "Bulletin of the Chemical Society of Japan (Bull. Chem. Soc. Japan)", 42, 2924 (1969), British Patent No. 1388492 The compound described, the compound described in Japanese Patent Laid-Open No. 53-133428, the compound described in the specification of German Patent No. 3337024, the "J. Org. Chem." by F. C. Schaefer et al. ", 29, the compound described in 1527 (1964), the compound described in Japanese Patent Laid-Open No. 62-58241, the compound described in Japanese Patent Laid-Open No. 5-281728, the compound described in Japanese Patent Laid-Open No. 5-34920 Compounds described in Gazette No. 4,212,976, and the like.

作為美國專利第4212976號說明書中所記載的化合物,例如可列舉:具有噁二唑骨架的化合物(例如2-三氯甲基-5-苯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯基)-1,3,4-噁二唑、2-三氯甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氯甲基-5-(2-萘基)-1,3,4-噁二唑、2-三溴甲基-5-苯基-1,3,4-噁二唑、2-三溴甲基-5-(2-萘基)-1,3,4-噁二唑;2-三氯甲基-5-苯乙烯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(4-甲氧基苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(4-正丁氧基苯乙烯基)-1,3,4-噁二唑、2-三溴甲基-5-苯乙烯基-1,3,4-噁二唑等)等。Examples of compounds described in the specification of US Pat. No. 4,212,976 include compounds having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorophenyl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4-oxadiazole , 2-Trichloromethyl-5-(2-naphthyl)-1,3,4-oxadiazole, 2-Tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2 -Tribromomethyl-5-(2-naphthyl)-1,3,4-oxadiazole; 2-Trichloromethyl-5-styryl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorostyryl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(4-methoxystyryl)-1,3, 4-Oxadiazole, 2-Trichloromethyl-5-(4-n-butoxystyryl)-1,3,4-oxadiazole, 2-Tribromomethyl-5-styryl- 1,3,4-oxadiazole, etc.) and so on.

另外,作為所述以外的光聚合起始劑,可列舉:日本專利特開2015-087611號公報的段落號0086中所記載的化合物、日本專利特開昭53-133428號公報、日本專利特公昭57-1819號公報、日本專利特公昭57-6096號公報及美國專利第3615455號說明書中所記載的化合物等,將該些內容併入本說明書中。In addition, examples of photopolymerization initiators other than those described above include compounds described in paragraph No. 0086 of Japanese Patent Laid-Open No. 2015-087611, Japanese Patent Laid-Open No. 53-133428, and Japanese Patent Laid-Open No. 2015-087611. Compounds and the like described in the specification of Japanese Patent Publication No. 57-1819, Japanese Patent Publication No. 57-6096, and US Pat. No. 3,615,455 are incorporated herein by reference.

作為酮化合物,例如可例示日本專利特開2015-087611號公報的段落號0087中所記載的化合物,將該些內容併入本說明書中。 市售品中,亦可適宜地使用卡亞庫(Kayacure)DETX(日本化藥(股份)製造)。As a ketone compound, the compound described in the paragraph No. 0087 of Unexamined-Japanese-Patent No. 2015-087611 can be illustrated, for example, and these content are incorporated in this specification. Among the commercially available products, Kayacure DETX (manufactured by Nippon Kayaku Co., Ltd.) can also be suitably used.

作為光聚合起始劑,亦可適宜地使用羥基苯乙酮化合物、胺基苯乙酮化合物、及醯基膦化合物。更具體而言,例如亦可使用日本專利特開平10-291969號公報中所記載的胺基苯乙酮系起始劑、日本專利第4225898號公報中所記載的醯基氧化膦系起始劑。 作為羥基苯乙酮系起始劑,可使用豔佳固(IRGACURE)-184(豔佳固(IRGACURE)為註冊商標)、達羅卡(DAROCUR)-1173、豔佳固(IRGACURE)-500、豔佳固(IRGACURE)-2959、豔佳固(IRGACURE)-127(商品名:均為巴斯夫(BASF)公司製造)。 作為胺基苯乙酮系起始劑,可使用作為市售品的豔佳固(IRGACURE)-907、豔佳固(IRGACURE)-369及豔佳固(IRGACURE)-379(商品名:均為巴斯夫公司製造)。 作為胺基苯乙酮系起始劑,亦可使用最大吸收波長與365 nm或405 nm等長波區域匹配的日本專利特開2009-191179號公報中所記載的化合物。 作為醯基膦系起始劑,可列舉2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。另外,可使用作為市售品的豔佳固(IRGACURE)-819或豔佳固(IRGACURE)-TPO(商品名:均為巴斯夫公司製造)。 作為茂金屬化合物,可例示豔佳固(IRGACURE)-784(巴斯夫公司製造)等。As a photopolymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and an acylphosphine compound can also be used suitably. More specifically, for example, the aminoacetophenone-based initiator described in Japanese Patent Laid-Open No. 10-291969 and the acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can also be used. . As the hydroxyacetophenone-based starter, IRGACURE-184 (IRGACURE is a registered trademark), DAROCUR-1173, IRGACURE-500, IRGACURE-2959, IRGACURE-127 (trade names: both are manufactured by BASF). As the aminoacetophenone-based starter, commercially available IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF). As the aminoacetophenone-based initiator, compounds described in Japanese Patent Laid-Open No. 2009-191179 whose absorption maximum wavelength is matched to a long wavelength region such as 365 nm or 405 nm can also be used. As an acylphosphine-based initiator, 2,4,6-trimethylbenzyl-diphenyl-phosphine oxide, etc. are mentioned. In addition, commercially available IRGACURE-819 or IRGACURE-TPO (trade name: both manufactured by BASF) can be used. Examples of the metallocene compound include IRGACURE-784 (manufactured by BASF) and the like.

作為光聚合起始劑,更佳為可列舉肟化合物。藉由使用肟化合物,能夠更有效地提升曝光寬容度。作為肟化合物的具體例,可使用日本專利特開2001-233842號公報中所記載的化合物、日本專利特開2000-80068號公報中所記載的化合物、日本專利特開2006-342166號公報中所記載的化合物。 作為較佳的肟化合物,例如可列舉:下述化合物、或3-苯甲醯氧基亞胺基丁烷-2-酮、3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮、2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮、及2-乙氧基羰氧基亞胺基-1-苯基丙烷-1-酮、1-苯基-1,2-丁二酮-2-(O-甲氧基羰基)肟、1-苯基-1,2-丁二酮-2-(O-乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-苯甲醯基)肟、1,3-二苯基丙三酮-2-(O-乙氧基羰基)肟、及1-苯基-3-乙氧基丙三酮-2-(O-苯甲醯基)肟等。 [化36]

Figure 02_image056
Figure 02_image058
As a photopolymerization initiator, an oxime compound is mentioned more preferably. Exposure latitude can be improved more effectively by using oxime compounds. As specific examples of the oxime compound, compounds described in JP 2001-233842 A, compounds described in JP 2000-80068 A, and JP 2006-342166 A can be used Compounds described. Preferable oxime compounds include, for example, the following compounds, 3-benzyloxyiminobutan-2-one, 3-acetoxyiminobutan-2-one, 3 -Propionyloxyiminobutan-2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-1-phenylpropan-1-one , 2-benzyloxyimino-1-phenylpropan-1-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyl Oxyimino-1-phenylpropan-1-one, 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-1,2- Butanedione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-1,2- Propanedione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(O-benzyl)oxime, 1,3-diphenylpropanetri Keto-2-(O-ethoxycarbonyl) oxime, and 1-phenyl-3-ethoxyglycerol-2-(O-benzyl) oxime, etc. [Chemical 36]
Figure 02_image056
Figure 02_image058

作為肟化合物,可列舉:「英國化學會誌,柏爾金匯刊II(J. C. S. Perkin II)」(1979年)pp.1653-1660、「英國化學會誌,柏爾金匯刊II」(1979年)pp.156-162、「光聚合物科學與技術雜誌(Journal of Photopolymer Science and Technology)」(1995年)pp.202-232、及日本專利特開2000-66385號公報、日本專利特開2000-80068號公報、日本專利特表2004-534797號公報、日本專利特開2006-342166號公報的各公報中所記載的化合物等。 市售品亦可適宜地使用豔佳固(IRGACURE)OXE-01(巴斯夫公司製造)、豔佳固(IRGACURE)OXE-02(巴斯夫公司製造)、N-1919(艾迪科(ADEKA)(股份)製造)。另外,亦可使用TR-PBG-304(常州強力電子新材料有限公司製造)、艾迪科弧魯茲(ADEKA arc Luz)NCI-831及艾迪科弧魯茲(ADEKA arc Luz)NCI-930(艾迪科(股份)製造)。另外,亦可使用DFI-091(大東化學(Daito Chemix)(股份)製造)。Examples of the oxime compound include "J.C.S. Perkin II" (1979) pp.1653-1660, "J.C.S. Perkin II" (1979) Year) pp.156-162, "Journal of Photopolymer Science and Technology" (1995) pp.202-232, and Japanese Patent Laid-Open No. 2000-66385, Japanese Patent Laid-Open Compounds and the like described in respective publications of Gazette No. 2000-80068, JP 2004-534797 A, and JP 2006-342166 A. Commercially available products can also be appropriately used: IRGACURE OXE-01 (manufactured by BASF), IRGACURE OXE-02 (manufactured by BASF), N-1919 (ADEKA) (stock) )manufacture). In addition, TR-PBG-304 (manufactured by Changzhou Qiangli Electronic New Material Co., Ltd.), ADEKA arc Luz NCI-831 and ADEKA arc Luz NCI-930 can also be used (manufactured by Adiko Co., Ltd.). Alternatively, DFI-091 (manufactured by Daito Chemix Co., Ltd.) can also be used.

另外,亦可使用咔唑的N位上連結有肟的日本專利特表2009-519904號公報中所記載的化合物、二苯甲酮部位上導入有雜取代基的美國專利7626957號說明書中所記載的化合物、色素部位上導入有硝基的日本專利特開2010-15025號公報及美國專利公開2009-292039號說明書中所記載的化合物、國際公開WO2009-131189號公報中所記載的酮肟化合物、同一分子內包含三嗪骨架與肟骨架的美國專利7556910號說明書中所記載的化合物、於405 nm下具有最大吸收且對於g射線光源具有良好的感度的日本專利特開2009-221114號公報中所記載的化合物等。 另外,亦可適宜地使用日本專利特開2007-231000號公報及日本專利特開2007-322744號公報中所記載的環狀肟化合物。環狀肟化合物之中,尤其日本專利特開2010-32985號公報、日本專利特開2010-185072號公報中所記載的於咔唑色素中縮環的環狀肟化合物具有高的光吸收性,就高感度化的觀點而言較佳。 另外,亦可適宜地使用作為於肟化合物的特定部位上具有不飽和鍵的化合物的日本專利特開2009-242469號公報中所記載的化合物。 進而,亦可使用具有氟原子的肟化合物。作為此種肟化合物的具體例,可列舉:日本專利特開2010-262028號公報中所記載的化合物,日本專利特表2014-500852號公報的段落號0345中所記載的化合物24、化合物36~化合物40,日本專利特開2013-164471號公報的段落號0101中所記載的化合物(C-3)等。作為具體例,可列舉以下的化合物。 [化37]

Figure 02_image060
作為最佳的肟化合物,可列舉:日本專利特開2007-269779號公報中所示的具有特定取代基的肟化合物、或日本專利特開2009-191061號公報中所示的具有硫代芳基的肟化合物等。In addition, compounds described in JP 2009-519904 A in which an oxime is linked to the N-position of carbazole, and a compound described in the specification of US Pat. No. 7,626,957 in which a heterosubstituent is introduced into the benzophenone moiety can also be used. The compounds described in Japanese Patent Laid-Open No. 2010-15025 and US Patent Publication No. 2009-292039, the ketoxime compounds described in International Publication No. WO2009-131189, The compound described in US Pat. No. 7,556,910, which contains a triazine skeleton and an oxime skeleton in the same molecule, has a maximum absorption at 405 nm, and has good sensitivity to a g-ray light source. Compounds described, etc. Moreover, the cyclic oxime compound described in Unexamined-Japanese-Patent No. 2007-231000 and Unexamined-Japanese-Patent No. 2007-322744 can also be used suitably. Among the cyclic oxime compounds, in particular, the cyclic oxime compounds described in Japanese Patent Laid-Open No. 2010-32985 and Japanese Patent Laid-Open No. 2010-185072 in carbazole dyes have high light absorption properties, It is preferable from the viewpoint of high sensitivity. Moreover, the compound described in Unexamined-Japanese-Patent No. 2009-242469 as a compound which has an unsaturated bond in a specific part of an oxime compound can also be used suitably. Furthermore, an oxime compound which has a fluorine atom can also be used. Specific examples of such oxime compounds include compounds described in Japanese Patent Laid-Open No. 2010-262028, compounds 24 and 36 to Compound 40, compound (C-3) described in paragraph No. 0101 of Japanese Patent Laid-Open No. 2013-164471, and the like. Specific examples include the following compounds. [Chemical 37]
Figure 02_image060
As the optimum oxime compound, the oxime compound having a specific substituent shown in Japanese Patent Laid-Open No. 2007-269779, or the thioaryl group shown in Japanese Patent Laid-Open No. 2009-191061 can be mentioned. oxime compounds, etc.

就曝光感度的觀點而言,光聚合起始劑較佳為選自由三鹵甲基三嗪化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、苯并噻唑化合物、二苯甲酮化合物、苯乙酮化合物及其衍生物、環戊二烯-苯-鐵錯合物及其鹽、鹵甲基噁二唑化合物、3-芳基取代香豆素化合物所組成的群組中的化合物。 光聚合起始劑更佳為三鹵甲基三嗪化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、二苯甲酮化合物、苯乙酮化合物,進而佳為選自由三鹵甲基三嗪化合物、α-胺基酮化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、二苯甲酮化合物所組成的群組中的至少一種化合物,進而較佳為使用茂金屬化合物或肟化合物,特佳為肟化合物。 另外,光聚合起始劑亦可使用二苯甲酮、N,N'-四甲基-4,4'-二胺基二苯甲酮(米其勒酮)等N,N'-四烷基-4,4'-二胺基二苯甲酮、2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲基硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮、烷基蒽醌等與芳香環縮環而成的醌類、安息香烷基醚等安息香醚化合物、安息香、烷基安息香等安息香化合物、苄基二甲基縮酮等苄基衍生物等。另外,亦可使用由下述式(I)所表示的化合物。 [化38]

Figure 02_image062
式(I) 式(I)中,R50 為碳數1~20的烷基;由一個以上的氧原子中斷的碳數2~20的烷基;碳數1~12的烷氧基;苯基;經碳數1~20的烷基、碳數1~12的烷氧基、鹵素原子、環戊基、環己基、碳數2~12的烯基、由一個以上的氧原子中斷的碳數2~18的烷基及碳數1~4的烷基的至少一者取代的苯基;或聯苯基,R51 為由式(II)所表示的基,或與R50 為相同的基,R52 ~R54 各自獨立地為碳數1~12的烷基、碳數1~12的烷氧基或鹵素。 [化39]
Figure 02_image064
式(II) 式中,R55 ~R57 與所述式(I)的R52 ~R54 相同。From the viewpoint of exposure sensitivity, the photopolymerization initiator is preferably selected from a trihalomethyltriazine compound, a benzyldimethylketal compound, an α-hydroxyketone compound, an α-aminoketone compound, an acyl group Phosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, onium salt compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and their derivatives, cyclopentadiene- Compounds in the group consisting of benzene-iron complexes and salts thereof, halomethyl oxadiazole compounds and 3-aryl substituted coumarin compounds. The photopolymerization initiator is more preferably a trihalomethyltriazine compound, an α-amino ketone compound, an acylphosphine compound, a phosphine oxide compound, a metallocene compound, an oxime compound, a triarylimidazole dimer, an onium salt compound, Benzophenone compounds, acetophenone compounds, and more preferably selected from trihalomethyltriazine compounds, α-amino ketone compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, and benzophenone compounds At least one compound in the formed group is further preferably a metallocene compound or an oxime compound, particularly preferably an oxime compound. In addition, as the photopolymerization initiator, N,N'-tetraoxane such as benzophenone and N,N'-tetramethyl-4,4'-diaminobenzophenone (Michler's ketone) may also be used. yl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1, 2-methyl- Aromatic ketones such as 1-[4-(methylthio)phenyl]-2-morpholinyl-acetone-1, alkyl anthraquinones, etc., quinones condensed with aromatic rings, benzoin alkyl ethers, etc. Benzoin ether compounds, benzoin compounds such as benzoin and alkyl benzoin, benzyl derivatives such as benzyl dimethyl ketal, and the like. In addition, a compound represented by the following formula (I) can also be used. [Chemical 38]
Figure 02_image062
Formula (I) In formula (I), R 50 is an alkyl group having 1 to 20 carbon atoms; an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms; an alkoxy group having 1 to 12 carbon atoms; benzene group; alkyl group with 1 to 20 carbon atoms, alkoxy group with 1 to 12 carbon atoms, halogen atom, cyclopentyl group, cyclohexyl group, alkenyl group with 2 to 12 carbon atoms, carbon interrupted by one or more oxygen atoms A phenyl group substituted by at least one of an alkyl group having 2 to 18 carbon atoms and an alkyl group having 1 to 4 carbon atoms; or a biphenyl group, where R 51 is a group represented by formula (II), or the same as R 50 group, R 52 to R 54 are each independently an alkyl group having 1 to 12 carbons, an alkoxy group having 1 to 12 carbons, or a halogen. [Chemical 39]
Figure 02_image064
Formula (II) In the formula, R 55 to R 57 are the same as R 52 to R 54 in the above-mentioned formula (I).

另外,光聚合起始劑亦可使用國際公開WO2015/125469號公報的段落號0048~段落號0055中所記載的化合物。In addition, as the photopolymerization initiator, the compounds described in Paragraph Nos. 0048 to 0055 of International Publication WO2015/125469 can also be used.

當組成物包含光聚合起始劑時,相對於組成物的總固體成分,光聚合起始劑的含量較佳為0.1質量%~30質量%,更佳為0.1質量%~20質量%,進而佳為0.1質量%~10質量%。 光聚合起始劑可僅為一種,亦可為兩種以上。當光聚合起始劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a photopolymerization initiator, the content of the photopolymerization initiator is preferably 0.1% by mass to 30% by mass, more preferably 0.1% by mass to 20% by mass relative to the total solid content of the composition, and further Preferably it is 0.1 mass % - 10 mass %. Only one type of photopolymerization initiator may be used, or two or more types may be used. When there are two or more kinds of photopolymerization initiators, it is preferable that the total of them is in the above-mentioned range.

<遷移抑制劑> 本發明的製造方法中所使用的感光性樹脂組成物較佳為更包含遷移抑制劑。藉由包含遷移抑制劑,能夠有效地抑制源自金屬層(金屬配線)的金屬離子向感光性樹脂組成物內移動。 作為遷移抑制劑,並無特別限制,可列舉:具有雜環(吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡唑環、異噁唑環、異噻唑環、四唑環、吡啶環、噠嗪環、嘧啶環、吡嗪環、哌啶環、哌嗪環、嗎啉環、2H-吡喃環及6H-吡喃環、三嗪環)的化合物、硫脲類及具有巰基的化合物、受阻酚系化合物、水楊酸衍生物系化合物、醯肼衍生物系化合物。尤其是可較佳地使用三唑、苯并三唑等三唑系化合物,四唑、苯并四唑等四唑系化合物。<Migration inhibitor> It is preferable that the photosensitive resin composition used for the manufacturing method of this invention further contains a migration inhibitor. By including the migration inhibitor, the movement of metal ions derived from the metal layer (metal wiring) into the photosensitive resin composition can be effectively suppressed. The migration inhibitor is not particularly limited, and examples include those having a heterocyclic ring (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetra azole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring) compounds, thiourea and mercapto compounds, hindered phenolic compounds, salicylic acid derivative compounds, and hydrazine derivative compounds. In particular, triazole-based compounds such as triazole and benzotriazole, and tetrazole-based compounds such as tetrazole and benzotetrazole can be preferably used.

另外,亦可使用捕捉鹵素離子等陰離子的離子捕獲(ion-trapping)劑。作為離子捕獲劑,並無特別限制,可使用現有公知者。尤其較佳為由下述組成式所表示的水滑石(hydrotalcite)或由下述組成式所表示的鉍的含水氧化物。 Mg1-X AlX (OH)2 (CO3 )X/2 ·mH2 O (所述組成式中,0<X≦0.5、m為正數) BiOx (OH)y (NO3 )z (所述組成式中,0.9≦x≦1.1、0.6≦y≦0.8、0.2≦z≦0.4) 再者,作為市售品,所述水滑石能夠獲取協和化學工業(股份)製造的商品名:DHT-4A。另外,作為市售品,所述鉍能夠獲取東亞合成(股份)製造的商品名:IXE500。另外,視需要亦可使用其他離子捕獲劑。例如,可列舉選自鎂、鋁、鈦、鋯、銻等中的元素的含水氧化物等。該些離子捕獲劑可單獨使用或組合兩種以上而使用。In addition, an ion-trapping agent that captures anions such as halogen ions can also be used. There is no restriction|limiting in particular as an ion scavenger, A conventionally well-known thing can be used. Particularly preferred is a hydrotalcite (hydrotalcite) represented by the following composition formula or a bismuth hydrous oxide represented by the following composition formula. Mg 1-X Al X (OH) 2 (CO 3 ) X/2 ·mH 2 O (in the composition formula, 0<X≦0.5, and m is a positive number) BiO x (OH) y (NO 3 ) z ( In the above composition formula, 0.9≦x≦1.1, 0.6≦y≦0.8, 0.2≦z≦0.4) In addition, as a commercial product, the hydrotalcite can be obtained under the trade name of Kyowa Chemical Industry Co., Ltd.: DHT -4A. In addition, as a commercial item, the bismuth can be obtained under the trade name: IXE500 manufactured by Toagosei Co., Ltd. In addition, other ion scavengers may also be used as needed. For example, hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium, antimony, and the like can be mentioned. These ion-trapping agents may be used alone or in combination of two or more.

作為其他遷移抑制劑,可使用日本專利特開2013-15701號公報的段落號0094中所記載的防銹劑、日本專利特開2009-283711號公報的段落號0073~段落號0076中所記載的化合物、日本專利特開2011-59656號公報的段落號0052中所記載的化合物、日本專利特開2012-194520號公報的段落號0114、段落號0116及段落號0118中所記載的化合物等。As other migration inhibitors, the rust inhibitor described in paragraph No. 0094 of Japanese Patent Laid-Open No. 2013-15701, and the rust inhibitor described in paragraph No. 0073 to paragraph No. 0076 of Japanese Patent Laid-Open No. 2009-283711 can be used Compounds, the compounds described in Paragraph No. 0052 of Japanese Patent Laid-Open No. 2011-59656, the compounds described in Paragraph Nos. 0114, 0116 and 0118 of Japanese Patent Laid-Open No. 2012-194520, and the like.

當組成物具有遷移抑制劑時,相對於組成物的總固體成分,遷移抑制劑的含量較佳為0.01質量%~5.0質量%,更佳為0.05質量%~2.0質量%,進而佳為0.1質量%~1.0質量%。 遷移抑制劑可僅為一種,亦可為兩種以上。當遷移抑制劑為兩種以上時,較佳為其合計為所述範圍。When the composition has a migration inhibitor, the content of the migration inhibitor is preferably 0.01% by mass to 5.0% by mass, more preferably 0.05% by mass to 2.0% by mass, and still more preferably 0.1% by mass relative to the total solid content of the composition. % to 1.0% by mass. Only one kind of migration inhibitor may be sufficient as it, and two or more types may be sufficient as it. When there are two or more kinds of migration inhibitors, it is preferable that the sum of them is in the above-mentioned range.

<<聚合抑制劑>> 本發明的製造方法中所使用的感光性樹脂組成物較佳為包含聚合抑制劑。 作為聚合抑制劑,例如可適宜地使用:對苯二酚、對甲氧基苯酚、二-第三丁基-對甲酚、五倍子酚、對第三丁基兒茶酚、1,3,5-三(4-第三丁基-3-羥基-2,6-二甲基苄基)-1,3,5-三嗪-2,4,6-(1H,3H,5H)-三酮、對苯醌、二苯基-對苯醌、4,4'-硫代雙(3-甲基-6-第三丁基苯酚)、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、啡噻嗪、N-亞硝基二苯基胺、N-苯基萘基胺、伸乙二胺四乙酸、1,2-環己烷二胺四乙酸、二醇醚二胺四乙酸、2,6-二-第三丁基-4-甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺丙基胺基)苯酚、N-亞硝基-N-(1-萘基)羥基胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷等。另外,亦可使用日本專利特開2015-127817號公報的段落號0060中所記載的聚合抑制劑、及國際公開WO2015/125469號公報的段落號0031~段落號0046中所記載的化合物。 當組成物含有聚合抑制劑時,相對於組成物的總固體成分,聚合抑制劑的含量較佳為0.01質量%~5質量%。 聚合抑制劑可僅為一種,亦可為兩種以上。當聚合抑制劑為兩種以上時,較佳為其合計為所述範圍。<<Polymerization inhibitor>> It is preferable that the photosensitive resin composition used for the manufacturing method of this invention contains a polymerization inhibitor. As the polymerization inhibitor, for example, hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, gallicol, p-tert-butylcatechol, 1,3,5 can be suitably used. -Tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione , p-benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl) -6-tert-butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylenediene Aminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol ether diaminetetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxyl Quinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N -Nitroso-N-(1-naphthyl)hydroxylamine ammonium salt, bis(4-hydroxy-3,5-tert-butyl)phenylmethane, etc. In addition, the polymerization inhibitors described in paragraph No. 0060 of Japanese Patent Laid-Open No. 2015-127817 and the compounds described in paragraph Nos. 0031 to 0046 of International Publication No. WO 2015/125469 can also be used. When the composition contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01% by mass to 5% by mass relative to the total solid content of the composition. Only one type of polymerization inhibitor may be used, or two or more types may be used. When there are two or more kinds of polymerization inhibitors, it is preferable that the sum of them is in the above-mentioned range.

<<熱鹼產生劑>> 本發明的製造方法中所使用的組成物亦可包含熱鹼產生劑。 作為熱鹼產生劑,其種類等並無特別限定,較佳為包括包含選自若加熱至40℃以上則產生鹼的酸性化合物、及具有pKa1為0~4的陰離子與銨陽離子的銨鹽中的至少一種的熱鹼產生劑。此處,所謂pKa1,表示多元酸的第一質子的解離常數(Ka)的對數標記(-Log10 Ka)。 藉由調配此種化合物,可於低溫下進行聚醯亞胺前驅物的環化反應,且可形成穩定性更優異的組成物。另外,熱鹼產生劑只要不加熱便不會產生鹼,故即便與聚醯亞胺前驅物共存,亦可抑制保存中的聚醯亞胺前驅物的環化,從而保存穩定性優異。<<Heat base generator>> The composition used for the manufacturing method of this invention may contain a heat base generator. The thermal alkali generator is not particularly limited in its kind, but preferably includes an acidic compound that generates a base when heated to 40° C. or higher, and an ammonium salt containing an anion having a pKa1 of 0 to 4 and an ammonium cation. at least one thermal base generator. Here, pKa1 means the logarithmic notation (-Log 10 Ka) of the dissociation constant (Ka) of the first proton of the polybasic acid. By preparing such a compound, the cyclization reaction of the polyimide precursor can be carried out at low temperature, and a composition with better stability can be formed. In addition, since the thermal base generator does not generate an alkali unless it is heated, even if it coexists with the polyimide precursor, cyclization of the polyimide precursor during storage can be suppressed, resulting in excellent storage stability.

本發明中的熱鹼產生劑包含選自若加熱至40℃以上則產生鹼的酸性化合物(A1)、及具有pKa1為0~4的陰離子與銨陽離子的銨鹽(A2)中的至少一種。 所述酸性化合物(A1)及所述銨鹽(A2)若進行加熱則產生鹼,因此藉由自該些化合物所產生的鹼,可促進聚醯亞胺前驅物的環化反應,並可於低溫下進行聚醯亞胺前驅物的環化。另外,即便使該些化合物與藉由鹼而進行環化並進行硬化的聚醯亞胺前驅物共存,只要不進行加熱,則聚醯亞胺前驅物的環化亦幾乎不會進行,因此可製備穩定性優異的聚醯亞胺前驅物組成物。 再者,於本說明書中,所謂酸性化合物,是指如下的化合物:將化合物1 g提取至容器中,添加離子交換水與四氫呋喃的混合液(質量比為水/四氫呋喃=1/4)50 mL,並於室溫下攪拌1小時。使用pH計,於20℃下對所述溶液進行測定而得的值未滿7。The thermal alkali generator in the present invention contains at least one selected from the group consisting of an acidic compound (A1) that generates a base when heated to 40° C. or higher, and an ammonium salt (A2) having an anion and an ammonium cation having pKa1 of 0 to 4. The acidic compound (A1) and the ammonium salt (A2) generate bases when heated, so the bases generated from these compounds can promote the cyclization reaction of the polyimide precursor, and can be used in Cyclization of the polyimide precursor is performed at low temperature. In addition, even if these compounds are allowed to coexist with the polyimide precursor that is cyclized and hardened by an alkali, the cyclization of the polyimide precursor hardly proceeds unless heating is performed, so it is possible to A polyimide precursor composition with excellent stability was prepared. In addition, in this specification, the "acidic compound" refers to a compound in which 1 g of the compound is extracted into a container, and 50 mL of a mixed solution of ion-exchanged water and tetrahydrofuran (mass ratio is water/tetrahydrofuran=1/4) is added. , and stirred at room temperature for 1 hour. The solution was measured at 20°C using a pH meter, and the value was less than 7.

於本發明中,酸性化合物(A1)及銨鹽(A2)的鹼產生溫度較佳為40℃以上,更佳為120℃~200℃。鹼產生溫度的上限更佳為190℃以下,進而佳為180℃以下,進而較佳為165℃以下。鹼產生溫度的下限進而佳為130℃以上,進而較佳為135℃以上。 若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度為40℃以上、進而為120℃以上,則於保存過程中難以產生鹼,因此可製備穩定性優異的聚醯亞胺前驅物組成物。若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度為200℃以下,則可減低聚醯亞胺前驅物的環化溫度。鹼產生溫度例如可使用示差掃描熱量測定,於耐壓膠囊中以5℃/min將化合物加熱至250℃為止,讀取溫度最低的發熱峰值的峰值溫度,並將峰值溫度作為鹼產生溫度來進行測定。In the present invention, the base generation temperature of the acidic compound (A1) and the ammonium salt (A2) is preferably 40°C or higher, more preferably 120°C to 200°C. The upper limit of the alkali generation temperature is more preferably 190°C or lower, more preferably 180°C or lower, and still more preferably 165°C or lower. The lower limit of the alkali generation temperature is more preferably 130°C or higher, and still more preferably 135°C or higher. When the base generation temperature of the acidic compound (A1) and the ammonium salt (A2) is 40°C or higher, and further 120°C or higher, it is difficult to generate an alkali during storage, so that a polyimide precursor composition with excellent stability can be prepared. thing. When the base generation temperature of the acidic compound (A1) and the ammonium salt (A2) is 200° C. or lower, the cyclization temperature of the polyimide precursor can be lowered. The alkali generation temperature can be measured, for example, using differential scanning calorimetry. The compound is heated to 250°C in a pressure-resistant capsule at 5°C/min, the peak temperature of the exothermic peak with the lowest temperature is read, and the peak temperature is determined as the alkali generation temperature. Determination.

於本發明中,藉由熱鹼產生劑所產生的鹼較佳為二級胺或三級胺,更佳為三級胺。三級胺因鹼性高,故可進一步降低聚醯亞胺前驅物的環化溫度。另外,藉由熱鹼產生劑所產生的鹼的沸點較佳為80℃以上,更佳為100℃以上,最佳為140℃以上。另外,所產生的鹼的分子量較佳為80~2,000。下限更佳為100以上。上限更佳為500以下。再者,分子量的值為根據結構式所求出的理論值。In the present invention, the base generated by the hot base generator is preferably a secondary amine or a tertiary amine, more preferably a tertiary amine. Due to the high basicity of tertiary amines, the cyclization temperature of the polyimide precursor can be further reduced. In addition, the boiling point of the alkali generated by the thermal alkali generator is preferably 80°C or higher, more preferably 100°C or higher, and most preferably 140°C or higher. In addition, the molecular weight of the generated base is preferably 80 to 2,000. The lower limit is more preferably 100 or more. The upper limit is more preferably 500 or less. In addition, the value of a molecular weight is a theoretical value calculated|required from a structural formula.

於本發明中,所述酸性化合物(A1)較佳為含有選自銨鹽及由後述的式(101)或式(102)所表示的化合物中的一種以上。In the present invention, the acidic compound (A1) preferably contains one or more compounds selected from ammonium salts and compounds represented by formula (101) or formula (102) described later.

於本發明中,所述銨鹽(A2)較佳為酸性化合物。再者,所述銨鹽(A2)可為含有若加熱至40℃以上(較佳為120℃~200℃)則產生鹼的酸性化合物的化合物,亦可為除若加熱至40℃以上(較佳為120℃~200℃)則產生鹼的酸性化合物以外的化合物。In the present invention, the ammonium salt (A2) is preferably an acidic compound. Furthermore, the ammonium salt (A2) may be a compound containing an acidic compound that generates a base when heated to 40°C or higher (preferably 120°C to 200°C), or may be a compound containing an acidic compound that generates a base when heated to 40°C or higher (preferably 120°C to 200°C). 120°C to 200°C is preferable), a compound other than an acidic compound which generates a base.

<<<銨鹽>>> 於本發明中,所謂銨鹽,是指由下述式(101)或式(102)所表示的銨陽離子與陰離子的鹽。陰離子可經由共價鍵而與銨陽離子的任何一部分進行鍵結,亦可於銨陽離子的分子外具有陰離子,較佳為於銨陽離子的分子外具有陰離子。再者,所謂於銨陽離子的分子外具有陰離子,是指銨陽離子與陰離子未經由共價鍵進行鍵結的情況。以下,亦將陽離子的分子外的陰離子稱為抗衡陰離子。 式(101)        式(102) [化40]

Figure 02_image066
式中,R1 ~R6 分別獨立地表示氫原子或烴基,式R7 表示烴基。R1 與R2 、R3 與R4 、R5 與R6 、R5 與R7 分別可鍵結而形成環。<<<Ammonium salt>>> In the present invention, the term ammonium salt refers to a salt of an ammonium cation and an anion represented by the following formula (101) or formula (102). The anion may be bonded to any part of the ammonium cation via a covalent bond, and may also have an anion outside the molecule of the ammonium cation, preferably an anion outside the molecule of the ammonium cation. In addition, having an anion outside the molecule of an ammonium cation means the case where an ammonium cation and an anion are not bonded by a covalent bond. Hereinafter, the anion outside the molecule of the cation is also referred to as a counter anion. Equation (101) Equation (102) [Chemical 40]
Figure 02_image066
In the formula, R 1 to R 6 each independently represent a hydrogen atom or a hydrocarbon group, and the formula R 7 represents a hydrocarbon group. R 1 and R 2 , R 3 and R 4 , R 5 and R 6 , and R 5 and R 7 may each be bonded to form a ring.

銨陽離子較佳為由下述式(Y1-1)~式(Y1-5)的任一者表示。 [化41]

Figure 02_image068
The ammonium cation is preferably represented by any one of the following formulae (Y1-1) to (Y1-5). [Chemical 41]
Figure 02_image068

所述式中,R101 表示n價的有機基,R1 及R7 與式(101)或式(102)為相同含義。 Ar101 及Ar102 分別獨立地表示芳基, n表示1以上的整數, m表示0~5的整數。In the above formula, R 101 represents an n-valent organic group, and R 1 and R 7 have the same meanings as those of formula (101) or formula (102). Ar 101 and Ar 102 each independently represent an aryl group, n represents an integer of 1 or more, and m represents an integer of 0 to 5.

於本發明中,銨鹽較佳為具有pKa1為0~4的陰離子與銨陽離子。陰離子的pKa1的上限更佳為3.5以下,進而佳為3.2以下。下限更佳為0.5以上,進而佳為1.0以上。若陰離子的pKa1為所述範圍,則可於低溫下對聚醯亞胺前驅物進行環化,進而,可提升聚醯亞胺前驅物組成物的穩定性。若pKa1為4以下,則熱鹼產生劑的穩定性良好,可抑制無加熱而產生鹼的情況,且聚醯亞胺前驅物組成物的穩定性良好。若pKa1為0以上,則所產生的鹼難以被中和,聚醯亞胺前驅物的環化效率良好。 陰離子的種類較佳為選自羧酸根陰離子、苯酚陰離子、磷酸根陰離子及硫酸根陰離子中的一種,就可使鹽的穩定性與熱分解性併存這一理由而言,更佳為羧酸根陰離子。即,銨鹽更佳為銨陽離子與羧酸根陰離子的鹽。 羧酸根陰離子較佳為具有兩個以上的羧基的二價以上的羧酸的陰離子,更佳為二價的羧酸的陰離子。根據該態樣,可製成可進一步提升聚醯亞胺前驅物組成物的穩定性、硬化性及顯影性的熱鹼產生劑。尤其,藉由使用二價的羧酸的陰離子,可進一步提升聚醯亞胺前驅物組成物的穩定性、硬化性及顯影性。 於本發明中,羧酸根陰離子較佳為pKa1為4以下的羧酸的陰離子。pKa1更佳為3.5以下,進而佳為3.2以下。根據該態樣,可進一步提升聚醯亞胺前驅物組成物的穩定性。 此處,所謂pKa1,表示酸的第一解離常數的倒數的對數,可參照「有機結構的物理鑒定法(Determination of Organic Structures by Physical Methods)」(著者:布朗(Brown), H. C., 麥克丹尼爾(McDaniel), D. H., 賀夫利格(Hafliger), O., 納奇德(Nachod), F. C.;編輯:布勞德(Braude), E. A., 納奇德(Nachod), F. C.;美國學術出版社(Academic Press),紐約,1955)、或「用於生化研究的資料(Data for Biochemical Research)」(著者:道森(Dawson), R. M. C.等;牛津,克拉倫登出版社(Clarendon Press), 1959)中所記載的值。關於該些文獻中無記載的化合物,使用利用ACD/pKa(ACD/Labs製造)的軟體並根據結構式所算出的值。In the present invention, the ammonium salt preferably has an anion and an ammonium cation with pKa1 of 0-4. The upper limit of the pKa1 of the anion is more preferably 3.5 or less, and still more preferably 3.2 or less. The lower limit is more preferably 0.5 or more, still more preferably 1.0 or more. When the pKa1 of the anion is in the above range, the polyimide precursor can be cyclized at low temperature, and the stability of the polyimide precursor composition can be improved. When pKa1 is 4 or less, the stability of the thermal base generator is good, the generation of alkali without heating can be suppressed, and the stability of the polyimide precursor composition is good. When pKa1 is 0 or more, the generated base is difficult to neutralize, and the cyclization efficiency of the polyimide precursor is good. The type of the anion is preferably one selected from the group consisting of carboxylate anion, phenol anion, phosphate anion, and sulfate anion, and is more preferably a carboxylate anion for the reason that the stability of the salt and thermal decomposability can coexist. . That is, the ammonium salt is more preferably a salt of an ammonium cation and a carboxylate anion. The carboxylate anion is preferably an anion of a divalent or more carboxylic acid having two or more carboxyl groups, more preferably an anion of a divalent carboxylic acid. According to this aspect, a thermal alkali generator which can further improve the stability, curability, and developability of the polyimide precursor composition can be obtained. In particular, by using an anion of a divalent carboxylic acid, the stability, curability, and developability of the polyimide precursor composition can be further improved. In the present invention, the carboxylate anion is preferably an anion of a carboxylic acid having a pKa1 of 4 or less. The pKa1 is more preferably 3.5 or less, still more preferably 3.2 or less. According to this aspect, the stability of the polyimide precursor composition can be further improved. Here, the so-called pKa1 refers to the logarithm of the reciprocal of the first dissociation constant of an acid, and can refer to "Determination of Organic Structures by Physical Methods" (authors: Brown, H. C., McDaniel ( McDaniel, D. H., Hafliger, O., Nachod, F. C.; Editors: Braude, E. A., Nachod, F. C.; American Academic Press ( Academic Press), New York, 1955), or "Data for Biochemical Research" (authors: Dawson, R. M. C. et al; Oxford, Clarendon Press, 1959) the value recorded in . For compounds not described in these documents, the values calculated from the structural formula using software of ACD/pKa (manufactured by ACD/Labs) were used.

於本發明中,羧酸根陰離子較佳為由下述式(X1)表示。 [化42]

Figure 02_image070
式(X1)中,EWG表示拉電子基。In the present invention, the carboxylate anion is preferably represented by the following formula (X1). [Chemical 42]
Figure 02_image070
In formula (X1), EWG represents an electron withdrawing group.

於本發明中,所謂拉電子基,是指哈米特(Hammett)的取代基常數σm顯示正值者。此處,σm於都野雄甫的總論、「有機合成化學協會誌」第23卷第8號(1965)P.631-642中有詳細說明。再者,本發明中的拉電子基並不限定於所述文獻中所記載的取代基。 作為σm顯示正值的取代基的例子,例如可列舉:CF3 基(σm=0.43)、CF3 CO基(σm=0.63)、HC≡C基(σm=0.21)、CH2 =CH基(σm=0.06)、Ac基(σm=0.38)、MeOCO基(σm=0.37)、MeCOCH=CH基(σm=0.21)、PhCO基(σm=0.34)、H2 NCOCH2 基(σm=0.06)等。再者,Me表示甲基,Ac表示乙醯基,Ph表示苯基。In the present invention, the term "electron-withdrawing group" refers to a group having a positive value of Hammett's substituent constant σm. Here, σm is described in detail in Yufu Tono's general theory, "The Society of Organic Synthetic Chemistry", Vol. 23, No. 8 (1965), pp. 631-642. In addition, the electron withdrawing group in the present invention is not limited to the substituents described in the literature. Examples of substituents having a positive value for σm include CF 3 group (σm=0.43), CF 3 CO group (σm=0.63), HC≡C group (σm=0.21), CH 2 =CH group ( σm=0.06), Ac group (σm=0.38), MeOCO group (σm=0.37), MeCOCH=CH group (σm=0.21), PhCO group (σm=0.34), H 2 NCOCH 2 group (σm=0.06), etc. . In addition, Me represents a methyl group, Ac represents an acetyl group, and Ph represents a phenyl group.

於本發明中,EWG較佳為表示由下述式(EWG-1)~式(EWG-6)所表示的基。 [化43]

Figure 02_image072
式中,Rx1 ~Rx3 分別獨立地表示氫原子、烷基、烯基、芳基、羥基或羧基,Ar表示芳香族基。In the present invention, EWG preferably represents a group represented by the following formulae (EWG-1) to (EWG-6). [Chemical 43]
Figure 02_image072
In the formula, R x1 to R x3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, a hydroxyl group, or a carboxyl group, and Ar represents an aromatic group.

於本發明中,羧酸根陰離子亦較佳為由下述式(X)所表示者。 [化44]

Figure 02_image074
式(X)中,L10 表示單鍵,或選自伸烷基、伸烯基、芳香族基、-NRX -及該些的組合中的二價的連結基,RX 表示氫原子、烷基、烯基或芳基。In the present invention, the carboxylate anion is also preferably represented by the following formula (X). [Chemical 44]
Figure 02_image074
In formula (X), L 10 represents a single bond, or a divalent linking group selected from an alkylene group, an alkenylene group, an aromatic group, -NR X - and a combination of these, and R X represents a hydrogen atom, Alkyl, alkenyl or aryl.

作為羧酸根陰離子的具體例,可列舉:順丁烯二酸根陰離子、鄰苯二甲酸根陰離子、N-苯基亞胺基二乙酸根陰離子及草酸根陰離子。 以下例示本發明中可較佳地使用的熱鹼產生劑。當然本發明中可使用的熱鹼產生劑並不限定於該些例子。 [化45]

Figure 02_image076
[化46]
Figure 02_image078
Specific examples of the carboxylate anion include maleate anion, phthalate anion, N-phenyliminodiacetate anion, and oxalate anion. The thermal alkali generator which can be preferably used in the present invention is exemplified below. Of course, the thermal alkali generator that can be used in the present invention is not limited to these examples. [Chemical 45]
Figure 02_image076
[Chemical 46]
Figure 02_image078

[化47]

Figure 02_image080
Figure 02_image082
(A-22)[Chemical 47]
Figure 02_image080
Figure 02_image082
(A-22)

當使用熱鹼產生劑時,相對於組成物的總固體成分,組成物中的熱鹼產生劑的含量較佳為0.1質量%~50質量%。下限更佳為0.5質量%以上,進而佳為1質量%以上。上限更佳為30質量%以下,進而佳為20質量%以下。 熱鹼產生劑可使用一種或兩種以上。當使用兩種以上時,較佳為合計量為所述範圍。When a hot alkali generator is used, the content of the hot alkali generator in the composition is preferably 0.1% by mass to 50% by mass relative to the total solid content of the composition. The lower limit is more preferably 0.5 mass % or more, still more preferably 1 mass % or more. The upper limit is more preferably 30 mass % or less, still more preferably 20 mass % or less. One type or two or more types of thermal alkali generators can be used. When two or more types are used, it is preferable that the total amount is within the above-mentioned range.

<<光鹼產生劑>> 本發明的製造方法中所使用的感光性樹脂組成物亦可包含光鹼產生劑。所謂光鹼產生劑,為藉由曝光而產生鹼者,只要為於常溫常壓的通常條件下不顯示活性,但當進行曝光、即電磁波的照射與加熱來作為外部刺激時產生鹼(鹼性物質)者,則並無特別限定。由於藉由曝光所產生的鹼作為藉由對聚醯亞胺前驅物進行加熱而使其硬化時的觸媒發揮作用,故於負型中可適宜地使用。<<Photobase generator>> The photosensitive resin composition used for the manufacturing method of this invention may contain a photobase generator. The so-called photobase generators are those that generate alkalis by exposure, as long as they do not show activity under normal conditions of normal temperature and pressure, but generate alkalis (alkalis) when exposed to light, that is, irradiation with electromagnetic waves and heating as external stimuli. Substances) are not particularly limited. Since the alkali generated by exposure acts as a catalyst when the polyimide precursor is hardened by heating, it can be suitably used in the negative type.

關於光鹼產生劑的含量,只要可形成所期望的圖案,則並無特別限定,可設為通常的含量。相對於樹脂100質量份,光鹼產生劑較佳為0.01質量份以上、30質量份以下的範圍內,更佳為0.05質量份~25質量份的範圍內,進而更佳為0.1質量份~20質量份的範圍內。The content of the photobase generator is not particularly limited as long as a desired pattern can be formed, and a normal content can be used. With respect to 100 parts by mass of the resin, the photobase generator is preferably in the range of 0.01 parts by mass to 30 parts by mass, more preferably in the range of 0.05 parts by mass to 25 parts by mass, and still more preferably in the range of 0.1 parts by mass to 20 parts by mass within the range of parts by mass.

於本發明中,作為光鹼產生劑,可使用公知者。例如可列舉:如M.白井與M.角岡(M. Shirai, and M. Tsunooka),「聚合物科學進展(Progress in Polymer Science,Prog. Polym. Sci.)」,21, 1(1996);角岡正弘,「高分子加工」,46, 2(1997);C. Kutal,「配位化學評論(Coordination Chemistry Reviews,Coord. Chem. Rev.)」,211, 353(2001);Y.金子與A.薩卡及D.乃克斯(Y. Kaneko, A. Sarker, and D. Neckers),「化學材料(Chemistry of Materials,Chem. Mater.)」,11, 170(1999);H.多知與M.白井及M.角岡(H. Tachi, M. Shirai, and M. Tsunooka),「光聚合物科學與技術雜誌(Journal of Photopolymer Science and Technology,J. Photopolym. Sci. Technol.)」, 13, 153(2000);M.溫克爾與格雷齊亞諾(M. Winkle, and. Graziano), 「光聚合物科學與技術雜誌(J. Photopolym. Sci. Technol.)」, 3, 419(1990);M.角岡與H.多知與S.吉高(M. Tsunooka, H. Tachi, and S. Yoshitaka), 「光聚合物科學與技術雜誌(J. Photopolym. Sci. Technol.)」, 9, 13(1996);K.須山與H.荒木及M.白井(K. Suyama, H. Araki, M. Shirai), 「光聚合物科學與技術雜誌(J. Photopolym. Sci. Technol.)」, 19, 81(2006)中所記載般,過渡金屬化合物錯合物、或具有銨鹽等結構者、或者如藉由脒部分與羧酸形成鹽而進行潛在化者般,藉由鹼成分形成鹽而中和的離子性化合物,或胺甲酸酯衍生物、肟酯衍生物、醯基化合物等藉由胺基甲酸酯鍵或肟鍵等而鹼成分進行潛在化的非離子性的化合物。 本發明中,作為光鹼產生劑,可列舉胺甲酸酯衍生物、醯胺衍生物、醯亞胺衍生物、α鈷錯合物類、咪唑衍生物、肉桂酸醯胺衍生物、肟衍生物等作為更佳的例子。In this invention, a well-known thing can be used as a photobase generator. For example, M. Shirai and M. Tsunooka, "Progress in Polymer Science, Prog. Polym. Sci.", 21, 1 (1996) Masahiro Kakuoka, "Polymer Processing", 46, 2 (1997); C. Kutal, "Coordination Chemistry Reviews, Coord. Chem. Rev.", 211, 353 (2001); Y. Y. Kaneko, A. Sarker, and D. Neckers, "Chemistry of Materials (Chem. Mater.)", 11, 170 (1999); H. . Tachi, M. Shirai, and M. Tsunooka, "Journal of Photopolymer Science and Technology, J. Photopolym. Sci. Technol .)”, 13, 153 (2000); M. Winkle, and. Graziano, “J. Photopolym. Sci. Technol.”, 3, 419 (1990); M. Tsunooka, H. Tachi, and S. Yoshitaka, "J. Photopolym. Sci . Technol.)", 9, 13 (1996); K. Suyama, H. Araki, M. Shirai, "J. Photopolym . Sci. Technol.)", 19, 81 (2006), transition metal compound complexes, or those having structures such as ammonium salts, or those that are latentized by forming a salt with an amidine moiety and a carboxylic acid Generally, an ionic compound neutralized by forming a salt with an alkali component, or a urethane derivative, an oxime ester derivative, an acyl compound, etc., is subjected to a latent reaction by the alkali component through a urethane bond or an oxime bond. cationic non-ionic compounds. In the present invention, examples of the photobase generator include urethane derivatives, amide derivatives, amide derivatives, α-cobalt complexes, imidazole derivatives, amide cinnamate derivatives, and oxime derivatives. as a better example.

作為自光鹼產生劑產生的鹼性物質,並無特別限定,可列舉:具有胺基的化合物、尤其是單胺或二胺等多胺、或者脒等。 所產生的鹼性物質較佳為鹼性度更高的具有胺基的化合物。其原因在於,相對於聚醯亞胺前驅物的醯亞胺化中的脫水縮合反應等的觸媒作用強,以更少的量添加、於更低的溫度下便能夠表現出脫水縮合反應等中的觸媒效果。即,由於所產生的鹼性物質的觸媒效果大,故作為負型感光性樹脂組成物的表觀的感度得到提升。 就所述觸媒效果的觀點而言,較佳為脒、脂肪族胺。Although it does not specifically limit as a basic substance which generate|occur|produces from a photobase generator, The compound which has an amine group, especially polyamines, such as a monoamine and a diamine, or an amidine, etc. are mentioned. The generated basic substance is preferably a compound having an amine group with higher basicity. The reason for this is that it has a strong catalytic effect with respect to the dehydration condensation reaction in the imidization of the polyimide precursor, and can exhibit a dehydration condensation reaction at a lower temperature when added in a smaller amount. catalyst effect in . That is, since the catalytic effect of the generated alkaline substance is large, the apparent sensitivity of the negative photosensitive resin composition is improved. From the viewpoint of the catalyst effect, amidines and aliphatic amines are preferred.

作為光鹼產生劑,較佳為結構中不含鹽的光鹼產生劑,且較佳為於光鹼產生劑中,於所產生的鹼部分的氮原子上不具有電荷。作為光鹼產生劑,較佳為所產生的鹼使用共價鍵來進行潛在化,鹼的產生機制較佳為所產生的鹼部分的氮原子與鄰接的原子之間的共價鍵被切斷而產生鹼。若為結構中不含鹽的光鹼產生劑,則可使光鹼產生劑為中性,因此溶劑溶解性更良好,適用期(pot life)改善。就此種理由而言,自本發明中所使用的光鹼產生劑產生的胺較佳為一級胺或二級胺。The photobase generator is preferably a photobase generator that does not contain a salt in its structure, and it is preferable that the photobase generator does not have a charge on the nitrogen atom of the generated base moiety. As a photobase generator, it is preferable that the generated base is latentized using a covalent bond, and the mechanism for generating the base is preferably that the covalent bond between the nitrogen atom of the generated base part and the adjacent atom is cut off. produce alkali. If it is a photobase generator which does not contain a salt in a structure, since a photobase generator can be neutralized, solvent solubility becomes more favorable, and a pot life (pot life) improves. For this reason, the amine produced from the photobase generator used in the present invention is preferably a primary amine or a secondary amine.

另外,就如上所述的理由而言,作為光鹼產生劑,較佳為如上所述般所產生的鹼使用共價鍵來進行潛在化,更佳為所產生的鹼使用醯胺鍵、胺甲酸酯鍵、肟鍵來進行潛在化。 作為本發明中的光鹼產生劑,例如可列舉:如日本專利特開2009-80452號公報及國際公開WO2009/123122號公報中所揭示般的具有肉桂酸醯胺結構的光鹼產生劑、如日本專利特開2006-189591號公報及日本專利特開2008-247747號公報中所揭示般的具有胺甲酸酯結構的光鹼產生劑、如日本專利特開2007-249013號公報及日本專利特開2008-003581號公報中所揭示般的具有肟結構、胺甲醯基肟結構的光鹼產生劑等,但並不限定於該些,除此以外亦可使用公知的光鹼產生劑的結構。In addition, for the reasons described above, as the photobase generator, it is preferable to use a covalent bond for the generated base as described above, and it is more preferable to use an amide bond or an amine for the generated base. Formate bond and oxime bond for latentization. As the photobase generator in the present invention, for example, a photobase generator having a cinnamate structure as disclosed in Japanese Patent Laid-Open No. 2009-80452 and International Publication No. WO2009/123122, such as Photobase generators having a urethane structure as disclosed in Japanese Patent Laid-Open No. 2006-189591 and Japanese Patent Laid-Open No. 2008-247747, such as Japanese Patent Laid-Open No. 2007-249013 and Japanese Patent Laid-Open No. 2007-249013 Photobase generators having an oxime structure and a carbamoyl oxime structure as disclosed in Kokai Publication No. 2008-003581, etc., are not limited to these, and structures of known photobase generators can also be used. .

除此以外,作為光鹼產生劑,可列舉:日本專利特開2012-93746號公報的段落號0185~段落號0188、段落號0199~段落號0200及段落號0202中所記載的化合物,日本專利特開2013-194205號公報的段落號0022~段落號0069中所記載的化合物,日本專利特開2013-204019號公報的段落號0026~段落號0074中所記載的化合物,以及國際公開WO2010/064631號公報的段落號0052中所記載的化合物作為例子。In addition, examples of the photobase generator include the compounds described in paragraphs 0185 to 0188, paragraphs 0199 to 0200, and paragraphs 0202 of Japanese Patent Laid-Open No. 2012-93746. Compounds described in paragraphs 0022 to 0069 of Japanese Patent Laid-Open No. 2013-194205, compounds described in paragraphs 0026 to 0074 of Japanese Patent Laid-Open No. 2013-204019, and International Publication WO2010/064631 The compounds described in paragraph No. 0052 of Gazette No. 1 are exemplified.

作為光鹼產生劑的市售品,亦可使用WPBG-266、WPBG-300、WPBG-345、WPBG-140、WPBG-165、WPBG-027、WPBG-018、WPBG-015、WPBG-041、WPBG-172、WPBG-174、WPBG-166、WPBG-158、WPBG-025、WPBG-168、WPBG-167及WPBG-082(和光純藥(股份)製造)。As a commercially available photobase generator, WPBG-266, WPBG-300, WPBG-345, WPBG-140, WPBG-165, WPBG-027, WPBG-018, WPBG-015, WPBG-041, WPBG can also be used -172, WPBG-174, WPBG-166, WPBG-158, WPBG-025, WPBG-168, WPBG-167 and WPBG-082 (manufactured by Wako Pure Chemical Industries Ltd.).

<<熱酸產生劑>> 本發明的製造方法中所使用的組成物亦可包含熱酸產生劑。熱酸產生劑藉由加熱而產生酸,並促進聚醯亞胺前驅物等的環化且進一步提升硬化膜的機械特性,除此以外亦具有促進以下化合物的交聯反應的效果,該化合物選自具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物、環氧化合物、氧雜環丁烷化合物及苯并噁嗪化合物中的至少一種。<<Thermal acid generator>> The composition used in the production method of the present invention may contain a thermal acid generator. The thermal acid generator generates acid by heating, and promotes the cyclization of polyimide precursors, etc., and further improves the mechanical properties of the cured film. In addition, it also has the effect of promoting the crosslinking reaction of the following compounds. At least one selected from a compound having a hydroxymethyl group, an alkoxymethyl group or an oxymethyl group, an epoxy compound, an oxetane compound, and a benzoxazine compound.

熱酸產生劑的熱分解起始溫度較佳為50℃~270℃,更佳為250℃以下。另外,若選擇在將組成物塗佈於基板後的乾燥(預烘烤:約70℃~140℃)時不產生酸、且在藉由其後的曝光、顯影而圖案化後的最終加熱(固化:約100℃~400℃)時產生酸者,則可抑制顯影時的感度降低,因此較佳。The thermal decomposition initiation temperature of the thermal acid generator is preferably 50°C to 270°C, more preferably 250°C or lower. In addition, if selecting the final heating ( Curing: when acid is generated at about 100°C to 400°C), a decrease in sensitivity at the time of image development can be suppressed, so it is preferable.

自熱酸產生劑產生的酸較佳為強酸,例如較佳為對甲苯磺酸、苯磺酸等芳基磺酸;甲磺酸、乙磺酸、丁磺酸等烷基磺酸或者三氟甲磺酸等鹵代烷基磺酸等。作為此種熱酸產生劑的例子,可列舉日本專利特開2013-072935號公報的段落號0055中所記載者。The acid generated by the autothermal acid generator is preferably a strong acid, such as arylsulfonic acid such as p-toluenesulfonic acid and benzenesulfonic acid; alkylsulfonic acid such as methanesulfonic acid, ethanesulfonic acid, butanesulfonic acid, etc. Halogenated alkyl sulfonic acids such as methanesulfonic acid, etc. As an example of such a thermal acid generator, the thing described in the paragraph number 0055 of Unexamined-Japanese-Patent No. 2013-072935 is mentioned.

其中,就使硬化膜中的殘留少且不使硬化膜物性降低的觀點而言,更佳為產生碳數1~4的烷基磺酸或碳數1~4的鹵代烷基磺酸的熱酸產生劑,進而佳為甲磺酸(4-羥基苯基)二甲基鋶、甲磺酸(4-((甲氧基羰基)氧基)苯基)二甲基鋶、甲磺酸苄基(4-羥基苯基)甲基鋶、甲磺酸苄基(4-((甲氧基羰基)氧基)苯基)甲基鋶、甲磺酸(4-羥基苯基)甲基((2-甲基苯基)甲基)鋶、三氟甲磺酸(4-羥基苯基)二甲基鋶、三氟甲磺酸(4-((甲氧基羰基)氧基)苯基)二甲基鋶、三氟甲磺酸苄基(4-羥基苯基)甲基鋶、三氟甲磺酸苄基(4-((甲氧基羰基)氧基)苯基)甲基鋶、三氟甲磺酸(4-羥基苯基)甲基((2-甲基苯基)甲基)鋶、3-(5-(((丙基磺醯基)氧基)亞胺基)噻吩-2(5H)-亞基)-2-(鄰甲苯基)丙腈、2,2-雙(3-(甲烷磺醯基胺基)-4-羥基苯基)六氟丙烷。Among them, from the viewpoint of reducing the residue in the cured film and not reducing the physical properties of the cured film, it is more preferable to be a thermal acid which generates a C1-4 alkylsulfonic acid or a C1-4 halogenated alkylsulfonic acid Generating agents, more preferably (4-hydroxyphenyl) dimethyl perionium methanesulfonate, (4-((methoxycarbonyl)oxy)phenyl) dimethyl perilinium methanesulfonate, and benzyl methanesulfonate (4-Hydroxyphenyl)methyl perionium, benzyl methanesulfonate (4-((methoxycarbonyl)oxy)phenyl)methyl perionate, (4-hydroxyphenyl)methyl methanesulfonate (( 2-Methylphenyl)methyl)perylium, (4-hydroxyphenyl)dimethylperylium trifluoromethanesulfonate, (4-((methoxycarbonyl)oxy)phenyl)trifluoromethanesulfonate Dimethyl strontium, benzyl (4-hydroxyphenyl) methyl sulfamate trifluoromethanesulfonate, benzyl (4-((methoxycarbonyl)oxy)phenyl)methyl sulfanate trifluoromethanesulfonate, (4-Hydroxyphenyl)methyl((2-methylphenyl)methyl)perylene trifluoromethanesulfonate, 3-(5-(((propylsulfonyl)oxy)imino)thiophene -2(5H)-ylidene)-2-(o-tolyl)propionitrile, 2,2-bis(3-(methanesulfonamido)-4-hydroxyphenyl)hexafluoropropane.

另外,日本專利特開2013-167742號公報的段落號0059中所記載的化合物作為熱酸產生劑亦較佳。Moreover, the compound described in the paragraph No. 0059 of Unexamined-Japanese-Patent No. 2013-167742 is also preferable as a thermal acid generator.

相對於聚醯亞胺前驅物等100質量份,熱酸產生劑的含量較佳為0.01質量份以上,更佳為0.1質量份以上。藉由含有0.01質量份以上,交聯反應及聚醯亞胺前驅物等的環化得以促進,因此可進一步提升硬化膜的機械特性及耐化學品性。另外,就硬化膜的電絕緣性的觀點而言,較佳為20質量份以下,更佳為15質量份以下,進而佳為10質量份以下。 熱酸產生劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量為所述範圍。The content of the thermal acid generator is preferably 0.01 part by mass or more, more preferably 0.1 part by mass or more, relative to 100 parts by mass of the polyimide precursor and the like. By containing 0.01 mass part or more, since the cyclization of a crosslinking reaction, a polyimide precursor, etc. is accelerated, the mechanical property and chemical resistance of a cured film can be improved further. Moreover, from a viewpoint of the electrical insulating property of a cured film, 20 mass parts or less are preferable, 15 mass parts or less are more preferable, and 10 mass parts or less are still more preferable. Only one type of thermal acid generator may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above-mentioned range.

<<熱聚合起始劑>> 本發明中使用的組成物亦可包含熱聚合起始劑(較佳為熱自由基聚合起始劑)。作為熱自由基聚合起始劑,可使用公知的熱自由基聚合起始劑。 熱自由基聚合起始劑為藉由熱的能量而產生自由基,並使聚合性化合物的聚合反應開始或加以促進的化合物。藉由添加熱自由基聚合起始劑,當使聚醯亞胺前驅物等的環化反應進行時,可使聚合性化合物的聚合反應進行。另外,當聚醯亞胺前驅物等含有乙烯性不飽和鍵時,亦可使聚醯亞胺前驅物等的環化與聚醯亞胺前驅物等的聚合反應一同進行,因此可達成更高的耐熱化。 作為熱自由基聚合起始劑,可列舉:芳香族酮類、鎓鹽化合物、過氧化物、硫化合物、六芳基聯咪唑化合物、酮肟酯化合物、硼酸鹽化合物、吖嗪鎓化合物、茂金屬化合物、活性酯化合物、具有碳鹵素鍵的化合物、偶氮系化合物等。其中,更佳為過氧化物或偶氮系化合物,特佳為過氧化物。 本發明中使用的熱自由基聚合起始劑的10小時半衰期溫度較佳為90℃~130℃,更佳為100℃~120℃。 具體而言,可列舉日本專利特開2008-63554號公報的段落號0074~段落號0118中所記載的化合物。 市售品中,可適宜地使用帕比優提(Perbutyl)Z及帕庫美(Percumyl)D(日油(股份)製造)。<<Thermal polymerization initiator>> The composition used in the present invention may also contain a thermal polymerization initiator (preferably a thermal radical polymerization initiator). As the thermal radical polymerization initiator, a known thermal radical polymerization initiator can be used. The thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or accelerates the polymerization reaction of the polymerizable compound. By adding a thermal radical polymerization initiator, the polymerization reaction of the polymerizable compound can be advanced when the cyclization reaction of the polyimide precursor or the like is advanced. In addition, when the polyimide precursor or the like contains an ethylenically unsaturated bond, the cyclization of the polyimide precursor and the like can also be carried out together with the polymerization reaction of the polyimide precursor, etc., so that higher of heat resistance. Examples of thermal radical polymerization initiators include aromatic ketones, onium salt compounds, peroxides, sulfur compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, cyclones Metal compounds, active ester compounds, compounds having a carbon-halogen bond, azo compounds, and the like. Among them, peroxides or azo compounds are more preferred, and peroxides are particularly preferred. The 10-hour half-life temperature of the thermal radical polymerization initiator used in the present invention is preferably 90°C to 130°C, more preferably 100°C to 120°C. Specifically, the compounds described in Paragraph Nos. 0074 to 0118 of JP-A No. 2008-63554 can be mentioned. Among the commercially available products, Perbutyl Z and Percumyl D (manufactured by NOF Corporation) can be suitably used.

當組成物具有熱自由基聚合起始劑時,相對於組成物的總固體成分,熱自由基聚合起始劑的含量較佳為0.1質量%~50質量%,更佳為0.1質量%~30質量%,特佳為0.1質量%~20質量%。另外,相對於聚合性化合物100質量份,較佳為包含熱自由基聚合起始劑0.1質量份~50質量份,更佳為包含0.5質量份~30質量份。根據該態樣,容易形成耐熱性更優異的硬化膜。 熱自由基聚合起始劑可僅為一種,亦可為兩種以上。當熱自由基聚合起始劑為兩種以上時,較佳為其合計為所述範圍。When the composition has a thermal radical polymerization initiator, the content of the thermal radical polymerization initiator is preferably 0.1% by mass to 50% by mass, more preferably 0.1% by mass to 30% by mass relative to the total solid content of the composition. The mass % is particularly preferably 0.1 to 20 mass %. Moreover, it is preferable to contain 0.1-50 mass parts of thermal radical polymerization initiators with respect to 100 mass parts of polymerizable compounds, and it is more preferable to contain 0.5-30 mass parts. According to this aspect, it becomes easy to form a cured film which is more excellent in heat resistance. Only one type of thermal radical polymerization initiator may be used, or two or more types may be used. When two or more types of thermal radical polymerization initiators are used, it is preferable that the total of them is in the above-mentioned range.

<<金屬接著性改良劑>> 本發明的製造方法中所使用的組成物較佳為包含用以提升與電極或配線等中所使用的金屬材料的接著性的金屬接著性改良劑。作為金屬接著性改良劑的例子,可列舉日本專利特開2014-186186號公報的段落號0046~段落號0049、或日本專利特開2013-072935號公報的段落號0032~段落號0043中所記載的硫醚系化合物。另外,作為金屬接著性改良劑,亦可例示下述化合物(N-[3-(三乙氧基矽烷基)丙基]馬來酸單醯胺)。 [化48]

Figure 02_image084
Figure 02_image086
Figure 02_image088
相對於聚醯亞胺前驅物等100質量份,金屬接著性改良劑的含量較佳為0.1質量份~30質量份,更佳為0.5質量份~15質量份的範圍。藉由設為0.1質量份以上,熱硬化後的膜與金屬的接著性變得良好,藉由設為30質量份以下,硬化後的膜的耐熱性、機械特性變得良好。 金屬接著性改良劑可僅為一種,亦可為兩種以上。當使用兩種以上時,較佳為其合計為所述範圍。<<Metal Adhesion Improver>> It is preferable that the composition used in the production method of the present invention contains a metal adhesion improver for improving adhesion to metal materials used for electrodes, wiring, and the like. Examples of the metal adhesion improver include those described in paragraphs 0046 to 0049 of JP 2014-186186 A, or paragraphs 0032 to 0043 of JP 2013-072935 A thioether compounds. In addition, the following compound (N-[3-(triethoxysilyl)propyl]maleic acid monoamide) can also be exemplified as the metal adhesion improving agent. [Chemical 48]
Figure 02_image084
Figure 02_image086
Figure 02_image088
The content of the metal adhesion improver is preferably in the range of 0.1 to 30 parts by mass, and more preferably in the range of 0.5 to 15 parts by mass, relative to 100 parts by mass of the polyimide precursor and the like. By setting it as 0.1 mass part or more, the adhesiveness of the film and metal after thermosetting becomes favorable, and by setting it as 30 mass parts or less, the heat resistance and mechanical properties of the cured film become favorable. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more kinds are used, it is preferable that they add up to the said range.

<<矽烷偶合劑>> 就提升與基板的接著性的方面而言,本發明的製造方法中所使用的組成物較佳為包含矽烷偶合劑。作為矽烷偶合劑的例子,可列舉:日本專利特開2014-191002號公報的段落號0062~段落號0073中所記載的化合物、國際公開WO2011/080992A1號公報的段落號0063~段落號0071中所記載的化合物、日本專利特開2014-191252號公報的段落號0060~段落號0061中所記載的化合物、日本專利特開2014-41264號公報的段落號0045~段落號0052中所記載的化合物、國際公開WO2014/097594號公報的段落0055中所記載的化合物。另外,如日本專利特開2011-128358號公報的段落號0050~段落號0058的記載般使用兩種以上的不同的矽烷偶合劑亦較佳。 相對於聚醯亞胺前驅物等100質量份,矽烷偶合劑的含量較佳為0.1質量份~20質量份,更佳為1質量份~10質量份的範圍。若為0.1質量份以上,則可賦予與基板的更充分的密著性,若為20質量份以下,則可進一步抑制於室溫保存時黏度上升等問題。 矽烷偶合劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量為所述範圍。<<Silane coupling agent>> It is preferable that the composition used for the manufacturing method of this invention contains a silane coupling agent from the point of improving the adhesiveness with a board|substrate. Examples of the silane coupling agent include the compounds described in paragraphs 0062 to 0073 of JP 2014-191002 A, and the compounds described in paragraphs 0063 to 0071 of WO2011/080992A1. The compounds described, the compounds described in paragraphs 0060 to 0061 of Japanese Patent Laid-Open No. 2014-191252, the compounds described in paragraphs 0045 to 0052 of Japanese Patent Laid-Open No. 2014-41264, The compound described in paragraph 0055 of International Publication WO2014/097594. In addition, it is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. The content of the silane coupling agent is preferably in the range of 0.1 to 20 parts by mass, and more preferably in the range of 1 to 10 parts by mass, relative to 100 parts by mass of the polyimide precursor and the like. When it is 0.1 parts by mass or more, more sufficient adhesion to the substrate can be imparted, and when it is 20 parts by mass or less, problems such as an increase in viscosity during storage at room temperature can be further suppressed. Only one type of silane coupling agent may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above-mentioned range.

<<增感色素>> 本發明的製造方法中所使用的組成物亦可包含增感色素。增感色素吸收特定的活性放射線而成為電子激發狀態。成為電子激發狀態的增感色素與胺產生劑、熱自由基聚合起始劑、光聚合起始劑等接觸,而產生電子移動、能量移動、發熱等作用。藉此,胺產生劑、熱自由基聚合起始劑、光聚合起始劑發生化學變化而分解,並生成自由基、酸或鹼。<<Sensitizing Pigment>> The composition used in the production method of the present invention may contain a sensitizing dye. The sensitizing dye absorbs specific active radiation and becomes an electronically excited state. The sensitizing dye in the electronically excited state is brought into contact with an amine generator, a thermal radical polymerization initiator, a photopolymerization initiator, and the like, and functions such as electron transfer, energy transfer, and heat generation are generated. Thereby, the amine generator, the thermal radical polymerization initiator, and the photopolymerization initiator are chemically changed and decomposed to generate a radical, an acid, or a base.

作為較佳的增感色素的例子,可列舉屬於以下的化合物類、且於300 nm~450 nm區域中具有最大吸收波長者。例如可列舉:多核芳香族類(例如菲、蒽、芘、苝、三伸苯、9,10-二烷氧基蒽)、呫噸類(例如螢光素、曙紅、紅螢素、若丹明B、孟加拉玫瑰紅)、硫雜蒽酮類(例如2,4-二乙基硫雜蒽酮)、花青類(例如硫雜羰花青、氧雜羰花青)、部花青類(例如部花青、羰部花青)、噻嗪類(例如噻嚀、亞甲藍、甲苯胺藍)、吖啶類(例如吖啶橙、氯黃素、吖啶黃素)、蒽醌類(例如蒽醌)、方酸內鎓鹽類(例如方酸內鎓鹽)、香豆素(coumarin)類(例如7-二乙基胺基-4-甲基香豆素、3,3'-羰基-雙(7-二乙基胺基香豆素)、3-乙醯基-7-二甲基胺基香豆素、3-乙氧基羰基-7-二甲基胺基香豆素、3-苄氧基羰基-7-二甲基胺基香豆素、3-甲氧基羰基-7-二乙基胺基香豆素、3-乙氧基羰基-7-二乙基胺基香豆素)、N-苯基二乙醇胺、苯乙烯基苯類、二苯乙烯基苯類、咔唑類等。Examples of preferable sensitizing dyes include those belonging to the following compounds and having a maximum absorption wavelength in the range of 300 nm to 450 nm. For example, polynuclear aromatics (such as phenanthrene, anthracene, pyrene, perylene, triphenylene, 9,10-dialkoxyanthracene), xanthenes (such as fluorescein, eosin, luciferin, Danmin B, Rose Bengal), thioxanthones (such as 2,4-diethylthioxanthone), cyanines (such as thiacarbocyanine, oxacarbocyanine), merocyanine (e.g. merocyanine, carbocyanine), thiazides (e.g. thiazide, methylene blue, toluidine blue), acridines (e.g. acridine orange, chloroflavin, acriflavin), anthracene Quinones (such as anthraquinone), squaraines (such as squaraine), coumarins (such as 7-diethylamino-4-methylcoumarin, 3, 3'-Carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylamino Coumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-di ethylaminocoumarin), N-phenyldiethanolamine, styrylbenzenes, distyrylbenzenes, carbazoles, etc.

其中,於本發明中,就起始效率的觀點而言,較佳為與多核芳香族類(例如菲、蒽、芘、苝、三伸苯)、硫雜蒽酮類、二苯乙烯基苯類、苯乙烯基苯類進行組合,更佳為使用具有蒽骨架的化合物。作為特佳的具體的化合物,可列舉9,10-二乙氧基蒽、9,10-二丁氧基蒽等。Among them, in the present invention, from the viewpoint of initial efficiency, polynuclear aromatics (for example, phenanthrene, anthracene, pyrene, perylene, and triphenylene), thioxanthones, and distyrylbenzene are preferred. A compound and a styrylbenzene compound are combined, and it is more preferable to use the compound which has an anthracene skeleton. As a particularly preferable specific compound, 9,10-diethoxyanthracene, 9,10-dibutoxyanthracene, etc. are mentioned.

當組成物包含增感色素時,相對於組成物的總固體成分,增感色素的含量較佳為0.01質量%~20質量%,更佳為0.1質量%~15質量%,進而佳為0.5質量%~10質量%。增感色素可單獨使用一種,亦可併用兩種以上。When the composition contains a sensitizing dye, the content of the sensitizing dye is preferably 0.01% by mass to 20% by mass, more preferably 0.1% by mass to 15% by mass, and still more preferably 0.5% by mass relative to the total solid content of the composition. % to 10% by mass. One of the sensitizing dyes may be used alone, or two or more of them may be used in combination.

<<鏈轉移劑>> 本發明的製造方法中所使用的組成物亦可含有鏈轉移劑。鏈轉移劑例如於高分子辭典第三版(高分子學會編,2005年)683頁~684頁中有定義。作為鏈轉移劑,例如可使用分子內具有SH、PH、SiH、GeH的化合物群組。該些鏈轉移劑對低活性的自由基種提供氫,而生成自由基,或者被氧化後,進行脫質子,藉此可生成自由基。尤其,可較佳地使用硫醇化合物(例如2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基苯并噁唑類、3-巰基三唑類、5-巰基四唑類等)。<<Chain transfer agent>> The composition used in the production method of the present invention may contain a chain transfer agent. The chain transfer agent is defined, for example, in the 3rd edition of the Polymer Dictionary (edited by The Society of Polymer Science, 2005) pp. 683 to 684. As the chain transfer agent, for example, a group of compounds having SH, PH, SiH, and GeH in the molecule can be used. These chain transfer agents can generate free radicals by supplying hydrogen to low-activity radical species, or by deprotonation after being oxidized, thereby generating free radicals. In particular, thiol compounds such as 2-mercaptobenzimidazoles, 2-mercaptobenzothiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazoles can be preferably used Wait).

當組成物含有鏈轉移劑時,相對於組成物的總固體成分100質量份,鏈轉移劑的較佳的含量較佳為0.01質量份~20質量份,更佳為1質量份~10質量份,特佳為1質量份~5質量份。 鏈轉移劑可僅為一種,亦可為兩種以上。當鏈轉移劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a chain transfer agent, the preferable content of the chain transfer agent is preferably 0.01 parts by mass to 20 parts by mass, more preferably 1 part by mass to 10 parts by mass, relative to 100 parts by mass of the total solid content of the composition. , particularly preferably 1 to 5 parts by mass. Only one type of chain transfer agent may be used, or two or more types may be used. When there are two or more kinds of chain transfer agents, it is preferable that the sum of them is in the above-mentioned range.

<<界面活性劑>> 於本發明的製造方法中所使用的組成物中,就進一步提升塗佈性的觀點而言,亦可添加各種界面活性劑。作為界面活性劑,可使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑。 尤其,藉由包含氟系界面活性劑,作為塗佈液來製備時的液體特性(尤其是流動性)進一步提升,因此可進一步改善塗佈厚度的均勻性或省液性。 當使用包含氟系界面活性劑的塗佈液來形成膜時,使被塗佈面與塗佈液的界面張力下降,藉此對於被塗佈面的潤濕性得到改善,且對於被塗佈面的塗佈性提升。因此,就即便於以少量的液量形成幾μm左右的薄膜的情況下,亦可更適宜地進行厚度的不均小的厚度均勻的膜形成的觀點而言有效。<<Surfactant>> In the composition used in the production method of the present invention, various surfactants may be added from the viewpoint of further improving coatability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used. In particular, by including a fluorine-based surfactant, the liquid properties (especially fluidity) when prepared as a coating liquid are further improved, so that the uniformity of the coating thickness and the liquid saving property can be further improved. When a coating liquid containing a fluorine-based surfactant is used to form a film, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the wettability to the surface to be coated is improved, and the surface to be coated is improved. The coatability of the surface is improved. Therefore, even in the case of forming a thin film with a thickness of about several μm with a small amount of liquid, it is effective in that it is possible to more appropriately form a film with a uniform thickness with little variation in thickness.

氟系界面活性劑的氟含有率適宜的是3質量%~40質量%,更佳為5質量%~30質量%,特佳為7質量%~25質量%。氟含有率為該範圍內的氟系界面活性劑就塗佈膜的厚度的均勻性或省液性的觀點而言有效,溶劑溶解性亦良好。 作為氟系界面活性劑,例如可列舉:美佳法(Megafac)F171、美佳法(Megafac)F172、美佳法(Megafac)F173、美佳法(Megafac)F176、美佳法(Megafac)F177、美佳法(Megafac)F141、美佳法(Megafac)F142、美佳法(Megafac)F143、美佳法(Megafac)F144、美佳法(Megafac)R30、美佳法(Megafac)F437、美佳法(Megafac)F475、美佳法(Megafac)F479、美佳法(Megafac)F482、美佳法(Megafac)F554、美佳法(Megafac)F780、美佳法(Megafac)F781(以上為迪愛生(DIC)(股份)製造),弗洛德(Fluorad)FC430、弗洛德(Fluorad)FC431、弗洛德(Fluorad)FC171(以上為住友3M(Sumitomo 3M)(股份)製造),沙福隆(Surflon)S-382、沙福隆(Surflon)SC-101、沙福隆(Surflon)SC-103、沙福隆(Surflon)SC-104、沙福隆(Surflon)SC-105、沙福隆(Surflon)SC1068、沙福隆(Surflon)SC-381、沙福隆(Surflon)SC-383、沙福隆(Surflon)S393、沙福隆(Surflon)KH-40(以上為旭硝子(股份)製造),PF636、PF656、PF6320、PF6520、PF7002(以上為歐諾法(OMNOVA)公司製造)等。 作為氟系界面活性劑,亦可使用嵌段聚合物,作為具體例,例如可列舉日本專利特開2011-89090號公報中所記載的化合物。 另外,亦可例示下述化合物作為本發明中所使用的氟系界面活性劑。 [化49]

Figure 02_image090
所述化合物的重量平均分子量例如為14,000。The fluorine content of the fluorine-based surfactant is preferably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, and particularly preferably 7% by mass to 25% by mass. The fluorine-based surfactant having the fluorine content within this range is effective from the viewpoint of uniformity of the thickness of the coating film or liquid saving, and also has good solvent solubility. Examples of fluorine-based surfactants include: Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac ) F141, Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, Megafac F475, Megafac F479, Megafac F482, Megafac F554, Megafac F780, Megafac F781 (the above are manufactured by DIC), Fluorad FC430 , Fluorad FC431, Fluorad FC171 (the above are manufactured by Sumitomo 3M (stock)), Surflon S-382, Surflon SC-101 , Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068, Surflon SC-381, Surflon SC-383, Surflon S393, Surflon KH-40 (the above are manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320, PF6520, PF7002 (the above are Uno Law (OMNOVA) company) and so on. As the fluorine-based surfactant, a block polymer can also be used, and specific examples thereof include compounds described in Japanese Patent Laid-Open No. 2011-89090. In addition, the following compounds can also be exemplified as the fluorine-based surfactant used in the present invention. [Chemical 49]
Figure 02_image090
The weight average molecular weight of the compound is, for example, 14,000.

作為非離子系界面活性劑,具體而言,可列舉:甘油、三羥甲基丙烷、三羥甲基乙烷以及該些的乙氧基化物及丙氧基化物(例如甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯油基醚、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、脫水山梨糖醇脂肪酸酯(巴斯夫公司製造的普盧蘭尼克(Pluronic)L10、普盧蘭尼克(Pluronic)L31、普盧蘭尼克(Pluronic)L61、普盧蘭尼克(Pluronic)L62、普盧蘭尼克(Pluronic)10R5、普盧蘭尼克(Pluronic)17R2、普盧蘭尼克(Pluronic)25R2,泰羅尼克(Tetronic)304、泰羅尼克(Tetronic)701、泰羅尼克(Tetronic)704、泰羅尼克(Tetronic)901、泰羅尼克(Tetronic)904、泰羅尼克(Tetronic)150R1)、索努帕斯(Solsperse)20000(日本路博潤(Lubrizol)(股份))等。另外,亦可使用竹本油脂(股份)製造的皮傲寧(Pionin)D-6112-W、和光純藥工業(股份)製造的NCW-101、NCW-1001、NCW-1002。Specific examples of nonionic surfactants include glycerin, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (eg, glycerol propoxylate, glycerol ethoxylates, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyethylene Glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, Pluronic L31, Pluronic L31, Pluronic manufactured by BASF Pluronic L61, Pluronic L62, Pluronic 10R5, Pluronic 17R2, Pluronic 25R2, Tetronic 304, Tyrol Tetronic 701, Tetronic 704, Tetronic 901, Tetronic 904, Tetronic 150R1), Solsperse 20000 (Lubrizol, Japan) ) (shares)) etc. In addition, Pionin D-6112-W manufactured by Takemoto Oil Co., Ltd., and NCW-101, NCW-1001, and NCW-1002 manufactured by Wako Pure Chemical Industries, Ltd. can also be used.

作為陽離子系界面活性劑,具體而言,可列舉:酞青衍生物(商品名:埃夫卡(EFKA)-745,森下產業(股份)製造),有機矽氧烷聚合物KP341(信越化學工業(股份)製造),(甲基)丙烯酸系(共)聚合物珀利弗洛(Polyflow)No.75、珀利弗洛(Polyflow)No.90、珀利弗洛(Polyflow)No.95(共榮社化學(股份)製造),W001(裕商(股份)製造)等。Specific examples of the cationic surfactant include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (Shin-Etsu Chemical Industry Co., Ltd. (Co., Ltd.), (meth)acrylic (co)polymer Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 ( Kyoeisha Chemical (stock), W001 (Yu Shang (stock)), etc.

作為陰離子系界面活性劑,具體而言,可列舉:W004、W005、W017(裕商(股份)製造)等。As an anionic surfactant, W004, W005, W017 (made by Yushang Co., Ltd.) etc. are mentioned specifically,.

作為矽酮系界面活性劑,例如可列舉:東麗·道康寧(股份)製造的「東麗矽酮(Toray Silicone)DC3PA」、「東麗矽酮(Toray Silicone)SH7PA」、「東麗矽酮(Toray Silicone)DC11PA」、「東麗矽酮(Toray Silicone)SH21PA」、「東麗矽酮(Toray Silicone)SH28PA」、「東麗矽酮(Toray Silicone)SH29PA」、「東麗矽酮(Toray Silicone)SH30PA」、「東麗矽酮(Toray Silicone)SH8400」,邁圖高新材料(Momentive Performance Materials)公司製造的「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、「TSF-4452」,信越化學工業(股份)製造的「KP341」、「KF6001」、「KF6002」,日本畢克化學(BYK Chemie Japan)(股份)製造的「BYK307」、「BYK323」、「BYK330」等。Examples of silicone-based surfactants include "Toray Silicone DC3PA", "Toray Silicone SH7PA", and "Toray Silicone" manufactured by Toray Dow Corning Co., Ltd. (Toray Silicone) DC11PA", "Toray Silicone (Toray Silicone) SH21PA", "Toray Silicone (Toray Silicone) SH28PA", "Toray Silicone (Toray Silicone) SH29PA", "Toray Silicone (Toray Silicone) SH29PA" Silicone) SH30PA", "Toray Silicone SH8400", "TSF-4440", "TSF-4300", "TSF-4445", "TSF- 4460", "TSF-4452", "KP341", "KF6001", "KF6002" manufactured by Shin-Etsu Chemical Industry Co., Ltd., "BYK307", "BYK323" manufactured by BYK Chemie Japan (Co., Ltd.) , "BYK330", etc.

當組成物含有界面活性劑時,相對於組成物的總固體成分,界面活性劑的含量較佳為0.001質量%~2.0質量%,更佳為0.005質量%~1.0質量%。 界面活性劑可僅為一種,亦可為兩種以上。當界面活性劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a surfactant, the content of the surfactant is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass, relative to the total solid content of the composition. Only one type of surfactant may be used, or two or more types may be used. When two or more types of surfactants are used, it is preferable that the total of the surfactants is in the above-mentioned range.

<<高級脂肪酸衍生物等>> 於本發明的製造方法中所使用的組成物中,為了防止由氧所引起的聚合阻礙,亦可添加如二十二酸或二十二醯胺般的高級脂肪酸衍生物等,並使其於塗佈後的乾燥的過程中偏向存在於組成物的表面。 當組成物含有高級脂肪酸衍生物時,相對於組成物的總固體成分,高級脂肪酸衍生物的含量較佳為0.1質量%~10質量%。 高級脂肪酸衍生物等可僅為一種,亦可為兩種以上。當高級脂肪酸衍生物等為兩種以上時,較佳為其合計為所述範圍。<<Higher fatty acid derivatives, etc.>> In the composition used in the production method of the present invention, in order to prevent polymerization inhibition due to oxygen, a higher fatty acid derivative such as behenic acid or docosamide may be added, and it may be added to the composition. During the drying process after coating, it tends to exist on the surface of the composition. When the composition contains a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1% by mass to 10% by mass relative to the total solid content of the composition. Only one type of higher fatty acid derivatives and the like may be used, or two or more types may be used. When there are two or more kinds of higher fatty acid derivatives and the like, it is preferable that the total be within the above-mentioned range.

<<溶劑>> 當藉由塗佈而使本發明的製造方法中所使用的組成物形成為層狀時,較佳為調配溶劑。溶劑只要可將組成物形成為層狀,則可無限制地使用公知者。 作為酯類,例如可適宜地列舉乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等,以及,作為醚類,例如可適宜地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等,以及,作為酮類,例如可適宜地列舉甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等,以及,作為芳香族烴類,例如可適宜地列舉甲苯、二甲苯、大茴香醚、檸檬烯等,以及,作為亞碸類,可適宜地列舉二甲基亞碸。<<Solvent>> When the composition used in the production method of the present invention is formed into a layer by coating, it is preferable to prepare a solvent. As the solvent, any known solvent can be used without limitation as long as the composition can be formed into a layer. Examples of esters include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl Butyl acid, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetates (e.g. methyl alkoxyacetate, alkoxyacetic acid ethyl ester, butyl alkoxyacetate (such as methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3 - Alkoxypropionate alkyl esters (such as methyl 3-alkoxypropionate, ethyl 3-alkoxypropionate, etc. (such as methyl 3-methoxypropionate, 3-methoxypropionate) acid ethyl ester, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), alkyl 2-alkoxypropionate (such as methyl 2-alkoxypropionate, Ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (e.g. methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate ester, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkoxy-2-methylpropionate and 2-alkoxy-2-methylpropionate Acid ethyl ester (such as 2-methoxy-2-methyl propionate methyl ester, 2-ethoxy-2-methyl propionate ethyl ester, etc.), pyruvate methyl ester, pyruvate ethyl ester, pyruvate propyl ester Esters, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc., and as ethers, for example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, Diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc., and as ketones, for example, methyl group can be suitably used Ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc., and as aromatic hydrocarbons, for example, toluene, Toluene, anisole, limonene, etc., and, as the sulfites, dimethyl sulfite can be suitably mentioned.

就塗佈表面性狀的改良等的觀點而言,將兩種以上的溶劑混合的形態亦較佳。其中,較佳為如下的混合溶液,其包含選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的兩種以上。特佳為併用二甲基亞碸與γ-丁內酯。From the viewpoint of improvement of coating surface properties, etc., a form in which two or more kinds of solvents are mixed is also preferable. Among them, the following mixed solution is preferred, which contains methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene Dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, ethyl carbitol Two or more of acid esters, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate. It is particularly preferable to use dimethyl sulfoxide and γ-butyrolactone in combination.

當組成物含有溶劑時,就塗佈性的觀點而言,溶劑的含量較佳為設為組成物的總固體成分濃度成為5質量%~80質量%的量,更佳為5質量%~70質量%,特佳為10質量%~60質量%。 溶劑可僅為一種,亦可為兩種以上。當溶劑為兩種以上時,較佳為其合計為所述範圍。 另外,就膜強度的觀點而言,相對於組成物的總質量,N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺及N,N-二甲基甲醯胺的含量較佳為未滿5質量%,更佳為未滿1質量%,進而佳為未滿0.5質量%,特佳為未滿0.1質量%。When the composition contains a solvent, from the viewpoint of coatability, the content of the solvent is preferably an amount such that the total solid content concentration of the composition is 5% by mass to 80% by mass, more preferably 5% by mass to 70% by mass The mass % is particularly preferably 10 to 60 mass %. Only one solvent may be used, or two or more types may be used. When there are two or more kinds of solvents, it is preferable that the sum of them is in the above-mentioned range. In addition, from the viewpoint of film strength, with respect to the total mass of the composition, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide And the content of N,N-dimethylformamide is preferably less than 5 mass %, more preferably less than 1 mass %, further preferably less than 0.5 mass %, particularly preferably less than 0.1 mass %.

<<其他添加劑>> 於無損本發明的效果的範圍內,本發明的製造方法中所使用的組成物視需要可調配各種添加物,例如無機粒子、硬化劑、硬化觸媒、填充劑、抗氧化劑、紫外線吸收劑、抗凝聚劑等。當調配該些添加劑時,較佳為將其合計調配量設為組成物的固體成分的3質量%以下。<<Other additives>> Various additives such as inorganic particles, hardeners, hardening catalysts, fillers, antioxidants, ultraviolet absorbers, Anti-agglomeration agent, etc. When these additives are blended, it is preferable that the total blending amount thereof be 3 mass % or less of the solid content of the composition.

就塗佈表面性狀的觀點而言,本發明的製造方法中所使用的組成物的水分含量較佳為未滿5質量%,更佳為未滿1質量%,特佳為未滿0.6質量%。From the viewpoint of coating surface properties, the water content of the composition used in the production method of the present invention is preferably less than 5% by mass, more preferably less than 1% by mass, particularly preferably less than 0.6% by mass .

就絕緣性的觀點而言,本發明的製造方法中所使用的組成物的金屬含量較佳為未滿5質量ppm,更佳為未滿1質量ppm,特佳為未滿0.5質量ppm。作為金屬,可列舉:鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含多種金屬時,較佳為該些金屬的合計為所述範圍。 另外,作為減低組成物中所無意地包含的金屬雜質的方法,可列舉以下等方法:選擇金屬含量少的原料作為構成組成物的原料、對構成組成物的原料進行過濾器過濾、於裝置內利用聚四氟乙烯等進行加襯而在盡可能抑制污染的條件下進行蒸餾。From the viewpoint of insulating properties, the metal content of the composition used in the production method of the present invention is preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and particularly preferably less than 0.5 mass ppm. As a metal, sodium, potassium, magnesium, calcium, iron, chromium, nickel, etc. are mentioned. When a plurality of metals are included, it is preferable that the sum of these metals is in the above-mentioned range. In addition, as a method for reducing the metal impurities unintentionally contained in the composition, methods such as selecting a raw material with a small metal content as a raw material constituting the composition, filtering the raw material constituting the composition with a filter, and placing the The distillation is carried out under conditions that suppress contamination as much as possible by lining with polytetrafluoroethylene or the like.

就配線腐蝕性的觀點而言,本發明的製造方法中所使用的組成物的鹵素原子的含量較佳為未滿500質量ppm,更佳為未滿300質量ppm,特佳為未滿200質量ppm。其中,以鹵素離子的狀態存在者較佳為未滿5質量ppm,更佳為未滿1質量ppm,特佳為未滿0.5質量ppm。作為鹵素原子,可列舉氯原子及溴原子。較佳為氯原子及溴原子、或氯化物離子及溴化物離子的合計分別為所述範圍。From the viewpoint of wiring corrosion, the content of halogen atoms in the composition used in the production method of the present invention is preferably less than 500 mass ppm, more preferably less than 300 mass ppm, particularly preferably less than 200 mass ppm. ppm. Among them, those in the state of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and particularly preferably less than 0.5 mass ppm. As a halogen atom, a chlorine atom and a bromine atom are mentioned. It is preferable that the total of chlorine atoms and bromine atoms, or chloride ions and bromide ions are in the above ranges, respectively.

半導體元件的製造方法 另外,本發明揭示一種包括所述積層體的製造方法的半導體元件的製造方法。以下,對使用藉由本發明的積層體的製造方法而獲得的積層體的半導體元件的一實施形態進行說明。 圖1所示的半導體元件100是所謂的三維安裝元件,將積層有多個半導體器件(半導體晶片)101a~半導體器件(半導體晶片)101d的半導體器件101配置於配線基板120上。 再者,於該實施形態中,以半導體器件(半導體晶片)的積層數為4層的情況為中心進行說明,但半導體器件(半導體晶片)的積層數並無特別限定,例如可為2層、8層、16層、32層等。另外,亦可為1層。Manufacturing method of semiconductor element In addition, the present invention discloses a method of manufacturing a semiconductor element including the method of manufacturing the laminate. Hereinafter, an embodiment of a semiconductor element using the laminate obtained by the method for producing the laminate of the present invention will be described. The semiconductor element 100 shown in FIG. 1 is a so-called three-dimensional mounted element, and a semiconductor device 101 in which a plurality of semiconductor devices (semiconductor wafers) 101 a to 101 d are stacked is arranged on a wiring board 120 . In addition, in this embodiment, the case where the number of laminated layers of the semiconductor device (semiconductor wafer) is 4 layers is mainly explained, but the number of laminated layers of the semiconductor device (semiconductor wafer) is not particularly limited. 8 floors, 16 floors, 32 floors, etc. In addition, it may be one layer.

多個半導體器件101a~半導體器件101d均包含矽基板等的半導體晶圓。 最上段的半導體器件101a不具有貫穿電極,於其一面上形成有電極墊(未圖示)。 半導體器件101b~半導體器件101d具有貫穿電極102b~貫穿電極102d,於各半導體器件的兩面上設置有一體地設置於貫穿電極上的連接墊(未圖示)。Each of the plurality of semiconductor devices 101a to 101d includes a semiconductor wafer such as a silicon substrate. The semiconductor device 101a in the uppermost stage does not have a through electrode, and an electrode pad (not shown) is formed on one surface thereof. The semiconductor devices 101b to 101d have through electrodes 102b to 102d, and connection pads (not shown) integrally provided on the through electrodes are provided on both surfaces of each semiconductor device.

半導體器件101具有將不具有貫穿電極的半導體器件101a、及具有貫穿電極102b~貫穿電極102d的半導體器件101b~半導體器件101d覆晶連接而成的結構。 即,不具有貫穿電極的半導體器件101a的電極墊、與鄰接於其的具有貫穿電極102b的半導體器件101b的半導體器件101a側的連接墊藉由焊料凸塊等金屬凸塊103a來連接,具有貫穿電極102b的半導體器件101b的另一側的連接墊、與鄰接於其的具有貫穿電極102c的半導體器件101c的半導體器件101b側的連接墊藉由焊料凸塊等金屬凸塊103b來連接。同樣地,具有貫穿電極102c的半導體器件101c的另一側的連接墊、與鄰接於其的具有貫穿電極102d的半導體器件101d的半導體器件101c側的連接墊藉由焊料凸塊等金屬凸塊103c來連接。The semiconductor device 101 has a structure in which a semiconductor device 101 a without a through electrode and a semiconductor device 101 b to 101 d having a through electrode 102 b to 102 d are flip-chip connected. That is, the electrode pad of the semiconductor device 101a without the through electrode is connected to the adjacent connection pad on the semiconductor device 101a side of the semiconductor device 101b with the through electrode 102b by the metal bump 103a such as a solder bump. The connection pad on the other side of the semiconductor device 101b of the electrode 102b and the connection pad on the semiconductor device 101b side of the semiconductor device 101c having the through electrode 102c adjacent thereto are connected by metal bumps 103b such as solder bumps. Similarly, the connection pads on the other side of the semiconductor device 101c having the through electrodes 102c and the connection pads on the semiconductor device 101c side of the semiconductor device 101d having the through electrodes 102d adjacent thereto are made of metal bumps 103c such as solder bumps. to connect.

於各半導體器件101a~半導體器件101d的間隙中形成有底部填充層110,各半導體器件101a~半導體器件101d經由底部填充層110而積層。An underfill layer 110 is formed in the gap between each of the semiconductor devices 101 a to 101 d , and each of the semiconductor devices 101 a to 101 d is laminated via the underfill layer 110 .

半導體器件101積層於配線基板120上。 作為配線基板120,例如使用將樹脂基板、陶瓷基板、玻璃基板等絕緣基板用作基材的多層配線基板。作為應用樹脂基板的配線基板120,可列舉多層覆銅積層板(多層印刷配線板)等。The semiconductor device 101 is laminated on the wiring board 120 . As the wiring board 120, for example, a multilayer wiring board using an insulating substrate such as a resin substrate, a ceramic substrate, and a glass substrate as a base material is used. As the wiring board 120 to which the resin board is applied, a multilayer copper-clad laminate (multilayer printed wiring board) and the like are exemplified.

於配線基板120的一面上設置有表面電極120a。 在配線基板120與半導體器件101之間配置有形成有再配線層105的絕緣層115,配線基板120與半導體器件101經由再配線層105而電性連接。絕緣層115是本發明中的經曝光的感光性樹脂組成物層(樹脂層)。關於絕緣層,將於下文詳述。 即,再配線層105的一端經由焊料凸塊等金屬凸塊103d,而與形成於半導體器件101d的再配線層105側的面上的電極墊連接。另外,再配線層105的另一端經由焊料凸塊等金屬凸塊103e而與配線基板的表面電極120a連接。 而且,在絕緣層115與半導體器件101之間形成有底部填充層110a。另外,在絕緣層115與配線基板120之間形成有底部填充層110b。A surface electrode 120 a is provided on one surface of the wiring board 120 . The insulating layer 115 on which the rewiring layer 105 is formed is disposed between the wiring board 120 and the semiconductor device 101 , and the wiring board 120 and the semiconductor device 101 are electrically connected via the rewiring layer 105 . The insulating layer 115 is the exposed photosensitive resin composition layer (resin layer) in the present invention. The insulating layer will be described in detail below. That is, one end of the rewiring layer 105 is connected to an electrode pad formed on the surface of the semiconductor device 101d on the rewiring layer 105 side via a metal bump 103d such as a solder bump. In addition, the other end of the rewiring layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump. Also, an underfill layer 110 a is formed between the insulating layer 115 and the semiconductor device 101 . In addition, an underfill layer 110 b is formed between the insulating layer 115 and the wiring board 120 .

圖2表示藉由本發明的製造方法而獲得的積層體(再配線層)的一例,200表示利用本發明的方法而獲得的積層體,201表示感光性樹脂組成物層(樹脂層),203表示金屬層。圖2中,金屬層203為以斜線表示的層。感光性樹脂組成物層201藉由負型顯影而形成有所期望的圖案。金屬層203是以覆蓋所述圖案的表面的一部分的方式形成,且於所述金屬層203的表面進而積層感光性樹脂組成物層(樹脂層)201。並且,感光性樹脂組成物層(樹脂層)作為絕緣膜而起作用,金屬層作為配線層而起作用,作為再配線層而組入至如上所述的半導體器件中。 [實施例]2 shows an example of a layered product (rewiring layer) obtained by the production method of the present invention, 200 is a layered product obtained by the method of the present invention, 201 is a photosensitive resin composition layer (resin layer), and 203 is metal layer. In FIG. 2 , the metal layer 203 is a layer indicated by diagonal lines. The photosensitive resin composition layer 201 is formed into a desired pattern by negative development. The metal layer 203 is formed so as to cover a part of the surface of the pattern, and a photosensitive resin composition layer (resin layer) 201 is further laminated on the surface of the metal layer 203 . Furthermore, the photosensitive resin composition layer (resin layer) functions as an insulating film, the metal layer functions as a wiring layer, and is incorporated in the above-described semiconductor device as a rewiring layer. [Example]

以下,列舉實施例來更具體地說明本發明。以下的實施例所示的材料、使用量、比例、處理內容、處理順序等只要不超出本發明的主旨,則可適當進行變更。因此,本發明的範圍並不限定於以下所示的具體例。只要無特別敘述,則「份」、「%」為質量基準。Hereinafter, an Example is given and this invention is demonstrated more concretely. Materials, usage amounts, ratios, processing contents, processing procedures, and the like shown in the following examples can be appropriately changed as long as they do not depart from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise stated, "parts" and "%" are the quality standards.

<合成例1> [來自均苯四甲酸二酐、4,4'-氧基二苯胺及苄醇的聚醯亞胺前驅物(A-1:不具有自由基聚合性基的聚醯亞胺前驅物)的合成] 使14.06 g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下將均苯四甲酸乾燥12小時而成者)、及14.22 g(131.58毫莫耳)的苄醇懸浮於50 mL的N-甲基吡咯啶酮中,並利用分子篩進行乾燥。於100℃下對懸浮液進行3小時加熱。進行加熱後幾分鐘後獲得透明的溶液。將反應混合物冷卻至室溫,並添加21.43 g(270.9毫莫耳)的吡啶及90 mL的N-甲基吡咯啶酮。繼而,將反應混合物冷卻至-10℃,一面將溫度保持為-10℃±4℃,一面歷時10分鐘添加16.12 g(135.5毫莫耳)的SOCl2 。於添加SOCl2 的期間內,黏度增加。利用50 mL的N-甲基吡咯啶酮進行稀釋後,於室溫下將反應混合物攪拌2小時。繼而,於20℃~23℃下,歷時20分鐘將使11.08 g(58.7毫莫耳)的4,4'-氧基二苯胺溶解於100 mL的N-甲基吡咯啶酮中而成的溶液滴加至反應混合物中。繼而,於室溫下將反應混合物攪拌1晚。繼而,添加至5升的水中使聚醯亞胺前驅物沈澱,並以5000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,添加至4升的水中再次攪拌30分鐘並再次進行濾取。繼而,於減壓下,在45℃下將所獲得的聚醯亞胺前驅物(A-1)乾燥3日。 (A-1) [化50]

Figure 02_image092
<Synthesis Example 1> [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-oxydiphenylamine, and benzyl alcohol (A-1: Polyimide having no radical polymerizable group) Synthesis of precursor)] 14.06 g (64.5 mmol) of pyromellitic dianhydride (obtained by drying pyromellitic acid at 140° C. for 12 hours) and 14.22 g (131.58 mmol) of Benzyl alcohol was suspended in 50 mL of N-methylpyrrolidone and dried over molecular sieves. The suspension was heated at 100°C for 3 hours. A clear solution was obtained after several minutes of heating. The reaction mixture was cooled to room temperature and 21.43 g (270.9 mmol) of pyridine and 90 mL of N-methylpyrrolidone were added. Then, the reaction mixture was cooled to -10°C, and 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes while maintaining the temperature at -10°C±4°C. During the addition of SOCl 2 , the viscosity increased. After dilution with 50 mL of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, a solution obtained by dissolving 11.08 g (58.7 mmol) of 4,4'-oxydiphenylamine in 100 mL of N-methylpyrrolidone over 20 minutes at 20°C to 23°C Added dropwise to the reaction mixture. Then, the reaction mixture was stirred at room temperature for 1 night. Next, the polyimide precursor was precipitated by adding to 5 liters of water, and the water-polyimide precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimide precursor was collected by filtration, added to 4 liters of water, stirred again for 30 minutes, and collected by filtration again. Next, the obtained polyimide precursor (A-1) was dried at 45° C. for 3 days under reduced pressure. (A-1) [Chemical 50]
Figure 02_image092

<合成例2> [來自均苯四甲酸二酐、4,4'-氧基二苯胺及甲基丙烯酸2-羥基乙酯的聚醯亞胺前驅物(A-2:具有自由基聚合性基的聚醯亞胺前驅物)的合成] 將14.06 g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下將均苯四甲酸乾燥12小時而成者)、18.6 g(129毫莫耳)的甲基丙烯酸2-羥基乙酯、0.05 g的對苯二酚、10.7 g的吡啶、以及140 g的二甘二甲醚(diglyme,二乙二醇二甲醚)混合,並於60℃的溫度下攪拌18小時,製造均苯四甲酸與甲基丙烯酸-2-羥基乙酯的二酯。繼而,藉由SOCl2 對所獲得的二酯進行氯化後,以與合成例1相同的方法,藉由4,4'-氧基二苯胺來轉換成聚醯亞胺前驅物,並以與合成例1相同的方法獲得聚醯亞胺前驅物(A-2)。 (A-2) [化51]

Figure 02_image094
<Synthesis Example 2> [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-oxydiphenylamine, and 2-hydroxyethyl methacrylate (A-2: having a radically polymerizable group) Synthesis of polyimide precursor)] 14.06 g (64.5 mmol) of pyromellitic dianhydride (produced by drying pyromellitic acid at 140°C for 12 hours), 18.6 g (129 mmol) molar) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, and 140 g of diglyme (diglyme) were mixed and added to It stirred at the temperature of 60 degreeC for 18 hours, and produced the diester of pyromellitic acid and 2-hydroxyethyl methacrylate. Then, after chlorinating the obtained diester with SOCl 2 , in the same manner as in Synthesis Example 1, it was converted into a polyimide precursor with 4,4'-oxydiphenylamine, and was used with The polyimide precursor (A-2) was obtained in the same manner as in Synthesis Example 1. (A-2) [Chemical 51]
Figure 02_image094

<合成例3> [來自4,4'-氧基二鄰苯二甲酸酐、4,4'-氧基二苯胺及甲基丙烯酸2-羥基乙酯的聚醯亞胺前驅物(A-3:具有自由基聚合性基的聚醯亞胺前驅物)的合成] 將20.0 g(64.5毫莫耳)的4,4'-氧基二鄰苯二甲酸酐(於140℃下將4,4'-氧基二鄰苯二甲酸乾燥12小時而成者)、18.6 g(129毫莫耳)的甲基丙烯酸2-羥基乙酯、0.05 g的對苯二酚、10.7 g的吡啶、以及140 g的二甘二甲醚混合,並於60℃的溫度下攪拌18小時,製造4,4'-氧基二鄰苯二甲酸與甲基丙烯酸-2-羥基乙酯的二酯。繼而,藉由SOCl2 對所獲得的二酯進行氯化後,以與合成例1相同的方法,藉由4,4'-氧基二苯胺來轉換成聚醯亞胺前驅物,並以與合成例1相同的方法獲得聚醯亞胺前驅物(A-3)。 (A-3) [化52]

Figure 02_image096
<Synthesis example 3> [Polyimide precursor derived from 4,4'-oxydiphthalic anhydride, 4,4'-oxydiphenylamine and 2-hydroxyethyl methacrylate (A-3 : Synthesis of a polyimide precursor having a radically polymerizable group)] 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic anhydride (4,4 '-oxydiphthalic acid dried for 12 hours), 18.6 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, and 140 g of diglyme was mixed and stirred at a temperature of 60° C. for 18 hours to produce a diester of 4,4′-oxydiphthalic acid and 2-hydroxyethyl methacrylate. Then, after chlorinating the obtained diester with SOCl 2 , in the same manner as in Synthesis Example 1, it was converted into a polyimide precursor with 4,4'-oxydiphenylamine, and was used with The polyimide precursor (A-3) was obtained in the same manner as in Synthesis Example 1. (A-3) [Chemical 52]
Figure 02_image096

<合成例4> [來自4,4'-氧基二鄰苯二甲酸酐及4,4'-氧基二苯胺的聚醯亞胺前驅物(A-4:具有羧基的聚醯亞胺前驅物)的合成] 使20.0 g(64.5毫莫耳)的4,4'-氧基二鄰苯二甲酸酐(於140℃下將4,4'-氧基二鄰苯二甲酸乾燥12小時而成者)溶解於180 mL的N-甲基-2-吡咯啶酮(N-methyl-2-pyrrolidone,NMP)中,進而,添加21.43 g(270.9毫莫耳)的吡啶,將反應液冷卻至-10℃,一面將溫度保持為-10℃±4℃,一面歷時30分鐘滴加使11.08 g(58.7毫莫耳)的4,4'-氧基二苯胺溶解於100 mL的NMP中而成的溶解液,繼而,於室溫下將反應混合液攪拌1晚。繼而,添加至5升的水中使聚醯亞胺前驅物沈澱,並以5000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,添加至4升的水中再次攪拌30分鐘並再次進行濾取。繼而,於減壓下,在45℃下將所獲得的聚醯亞胺前驅物(A-4)乾燥3日。 (A-4) [化53]

Figure 02_image098
<Synthesis example 4> [Polyimide precursor derived from 4,4'-oxydiphthalic anhydride and 4,4'-oxydiphenylamine (A-4: Polyimide precursor having a carboxyl group) 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic anhydride (4,4'-oxydiphthalic acid was dried at 140°C for 12 hours to obtain NMP) was dissolved in 180 mL of N-methyl-2-pyrrolidone (NMP), and 21.43 g (270.9 mmol) of pyridine was added, and the reaction solution was cooled to -10°C, while maintaining the temperature at -10°C±4°C, 11.08 g (58.7 mmol) of 4,4'-oxydiphenylamine was dissolved in 100 mL of NMP by dropwise addition over 30 minutes. , and then the reaction mixture was stirred at room temperature for 1 night. Next, the polyimide precursor was precipitated by adding to 5 liters of water, and the water-polyimide precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimide precursor was collected by filtration, added to 4 liters of water, stirred again for 30 minutes, and collected by filtration again. Next, the obtained polyimide precursor (A-4) was dried at 45° C. for 3 days under reduced pressure. (A-4) [Chemical 53]
Figure 02_image098

<合成例5> [來自均苯四甲酸二酐、聯間甲苯胺(m-tolidine)及甲基丙烯酸2-羥基乙酯的聚醯亞胺前驅物(A-5:具有自由基聚合性基的聚醯亞胺前驅物)的合成] 將14.06 g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下將均苯四甲酸乾燥12小時而成者)、18.6 g(129毫莫耳)的甲基丙烯酸2-羥基乙酯、0.05 g的對苯二酚、10.7 g的吡啶、以及140 g的NMP(N-甲基-2-吡咯啶酮)混合,並於60℃的溫度下攪拌18小時,製造均苯四甲酸與甲基丙烯酸-2-羥基乙酯的二酯。繼而,將反應混合物冷卻至-10℃,一面將溫度保持為-10℃±4℃,一面歷時10分鐘添加16.12 g(135.5毫莫耳)的SOCl2 。利用50 mL的N-甲基吡咯啶酮進行稀釋後,將反應混合物於室溫下攪拌2小時。繼而,於20℃~23℃下,歷時20分鐘將使12.46 g(58.7毫莫耳)的聯間甲苯胺溶解於100 mL的N-甲基吡咯啶酮中而成的溶液滴加至反應混合物中。繼而,將反應混合物於室溫下攪拌一晚。繼而,添加至5升的水中而使聚醯亞胺前驅物沈澱,並以5000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,添加至4升的水中再次攪拌30分鐘並再次進行濾取。繼而,於減壓下,在45℃下將所獲得的聚醯亞胺前驅物乾燥3日,獲得聚醯亞胺前驅物(A-5)。 (A-5) [化54]

Figure 02_image100
<Synthesis Example 5> [Polyimide precursor derived from pyromellitic dianhydride, m-tolidine and 2-hydroxyethyl methacrylate (A-5: having a radical polymerizable group) Synthesis of polyimide precursor)] 14.06 g (64.5 mmol) of pyromellitic dianhydride (produced by drying pyromellitic acid at 140°C for 12 hours), 18.6 g (129 mmol) molar) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, and 140 g of NMP (N-methyl-2-pyrrolidone) were mixed and heated at 60°C. The mixture was stirred at the temperature for 18 hours to produce a diester of pyromellitic acid and 2-hydroxyethyl methacrylate. Then, the reaction mixture was cooled to -10°C, and 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes while maintaining the temperature at -10°C±4°C. After dilution with 50 mL of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Then, at 20°C to 23°C, a solution obtained by dissolving 12.46 g (58.7 mmol) of bim-toluidine in 100 mL of N-methylpyrrolidone was added dropwise to the reaction mixture for 20 minutes. middle. Then, the reaction mixture was stirred at room temperature overnight. Next, the polyimide precursor was precipitated by adding to 5 liters of water, and the water-polyimide precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimide precursor was collected by filtration, added to 4 liters of water, stirred again for 30 minutes, and collected by filtration again. Next, the obtained polyimide precursor was dried at 45° C. for 3 days under reduced pressure to obtain a polyimide precursor (A-5). (A-5) [Chemical 54]
Figure 02_image100

<合成例6> [比較例用聚合物(RA-1)的合成] 將27.0 g(153.2毫莫耳)的甲基丙烯酸苄酯、20 g(157.3毫莫耳)的N-異丙基甲基丙烯醯胺、39 g(309.2毫莫耳)的甲基丙烯酸烯丙酯、13 g(151.0毫莫耳)的甲基丙烯酸、聚合起始劑(V-601、和光純藥工業(股份)製造)3.55 g(15.4毫莫耳)、以及3-甲氧基-2-丙醇300 g混合。歷時2小時將混合液滴加至於氮氣環境下加熱至75℃的3-甲氧基-2-丙醇300 g中。滴加結束後,進而於氮氣環境下以75℃攪拌2小時。反應結束後,添加至5升的水中使聚合物沈澱,並以5000 rpm的速度攪拌15分鐘。對丙烯酸樹脂進行濾取,添加至4升的水中再次攪拌30分鐘並再次進行濾取。繼而,於減壓下,在45℃下將所獲得的丙烯酸樹脂(RA-1)乾燥3日。下述化學式(RA-1)中的數值為原料單體的質量比。 (RA-1) [化55]

Figure 02_image102
<Synthesis example 6> [Synthesis of polymer (RA-1) for comparative example] 27.0 g (153.2 mmol) of benzyl methacrylate, 20 g (157.3 mmol) of N-isopropylmethyl acrylamide, 39 g (309.2 mmol) of allyl methacrylate, 13 g (151.0 mmol) of methacrylic acid, polymerization initiator (V-601, Wako Pure Chemical Industries, Ltd.) Manufacturing) 3.55 g (15.4 mmol), and 300 g of 3-methoxy-2-propanol were mixed. The mixture was added dropwise to 300 g of 3-methoxy-2-propanol heated to 75°C under nitrogen atmosphere over 2 hours. After completion of the dropwise addition, the mixture was further stirred at 75° C. for 2 hours under a nitrogen atmosphere. After the reaction was completed, the polymer was precipitated by adding to 5 liters of water and stirred at 5000 rpm for 15 minutes. The acrylic resin was collected by filtration, added to 4 liters of water, stirred again for 30 minutes, and collected by filtration again. Next, the obtained acrylic resin (RA-1) was dried at 45° C. for 3 days under reduced pressure. The numerical value in the following chemical formula (RA-1) is the mass ratio of the raw material monomers. (RA-1) [Chemical 55]
Figure 02_image102

<實施例及比較例> 將以下記載的成分混合而製成均勻的溶液,製備感光性樹脂組成物的塗佈液。 <<感光性樹脂組成物的組成>> (A)樹脂:表1中所記載的質量份 (B)聚合性化合物:表1中所記載的質量份 (C)光聚合起始劑:表1中所記載的質量份 (D)聚合抑制劑:表1中所記載的質量份 γ-丁內酯:60.00質量份<Examples and Comparative Examples> The components described below were mixed to prepare a uniform solution, and a coating liquid of the photosensitive resin composition was prepared. <<Composition of photosensitive resin composition>> (A) Resin: parts by mass described in Table 1 (B) Polymerizable compound: parts by mass described in Table 1 (C) Photopolymerization initiator: parts by mass described in Table 1 (D) Polymerization inhibitor: parts by mass described in Table 1 γ-Butyrolactone: 60.00 parts by mass

[表1]   (A)樹脂 (B)聚合性化合物 (C)光聚合起始劑 (D)聚合抑制劑 種類 添加量 種類 添加量 種類 添加量 種類 添加量 感光性樹脂組成物1 A-1 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物2 A-2 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物3 A-3 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物4 A-4 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物5 A-5 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物6 A-6 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物7 A-3 32 B-2 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物8 A-3 32 B-1 6.88 C-2 1.04 D-1 0.08 感光性樹脂組成物9 A-3 32 B-1 6.88 C-1 1.04 D-2 0.08 感光性樹脂組成物10 RA-1 32 B-1 6.88 C-1 1.04 D-1 0.08 感光性樹脂組成物11 RA-2 32 B-1 6.88 C-1 1.04 D-1 0.08 [Table 1] (A) Resin (B) Polymerizable compound (C) Photopolymerization initiator (D) Polymerization inhibitor type added amount type added amount type added amount type added amount Photosensitive resin composition 1 A-1 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 2 A-2 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 3 A-3 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 4 A-4 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 5 A-5 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 6 A-6 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 7 A-3 32 B-2 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 8 A-3 32 B-1 6.88 C-2 1.04 D-1 0.08 Photosensitive resin composition 9 A-3 32 B-1 6.88 C-1 1.04 D-2 0.08 Photosensitive resin composition 10 RA-1 32 B-1 6.88 C-1 1.04 D-1 0.08 Photosensitive resin composition 11 RA-2 32 B-1 6.88 C-1 1.04 D-1 0.08

表1中所記載的略稱如下所述。 (A)樹脂 合成例1~合成例5中合成的樹脂: A-6:瑪蒂米得(Matrimid)5218(亨斯邁(股份)製造、聚醯亞胺) 比較例用聚合物(RA-2):聚甲基丙烯酸酯甲酯(Mw:15,000、日本西格瑪奧德里奇(Sigma-Aldrich Japan)公司製造)Abbreviations described in Table 1 are as follows. (A) Resin Resins synthesized in Synthesis Example 1 to Synthesis Example 5: A-6: Matrimid 5218 (manufactured by Huntsman Corporation, polyimide) Polymer (RA-2) for Comparative Example: Polymethyl methacrylate (Mw: 15,000, manufactured by Sigma-Aldrich Japan)

(B)聚合性化合物 B-1:SR-209(日本沙多瑪(股份)製造、二官能甲基丙烯酸酯、下述結構) [化56]

Figure 02_image104
B-2:NK酯(NK ESTER)A-9300(新中村化學工業公司製造、三官能丙烯酸酯、下述結構) [化57]
Figure 02_image106
(B) Polymerizable compound B-1: SR-209 (manufactured by Nippon Sadolan Co., Ltd., difunctional methacrylate, the following structure) [Chemical 56]
Figure 02_image104
B-2: NK Ester (NK ESTER) A-9300 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., trifunctional acrylate, the following structure) [Chemical 57]
Figure 02_image106

(C)光聚合起始劑 C-1:豔佳固(IRGACURE)OXE-01(巴斯夫公司製造) C-2:豔佳固(IRGACURE)-784(巴斯夫公司製造)(C) Photopolymerization initiator C-1: IRGACURE OXE-01 (manufactured by BASF) C-2: IRGACURE-784 (manufactured by BASF)

(D)聚合抑制劑 D-1:2,6-二-第三丁基-4-甲基苯酚(東京化成工業(股份)製造) D-2:對苯醌(東京化成工業(股份)製造)(D) Polymerization inhibitor D-1: 2,6-di-tert-butyl-4-methylphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) D-2: p-benzoquinone (manufactured by Tokyo Chemical Industry Co., Ltd.)

將各感光性樹脂組成物通過細孔的寬度為0.8 μm的過濾器而進行加壓過濾,然後藉由旋轉塗佈法而於矽晶圓上形成感光性樹脂組成物層。於加熱板上,以100℃將應用了所獲得的感光性樹脂組成物層的矽晶圓乾燥5分鐘,而於矽晶圓上形成後述表中記載的厚度的均勻的感光性樹脂組成物層。使用步進機(尼康(Nikon)NSR 2005 i9C),於波長365 nm下,以500 mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行曝光,利用環己酮對經曝光的感光性樹脂組成物層(樹脂層)進行60秒鐘顯影,而形成直徑為10 μm的孔。繼而,於氮氣環境下以10℃/分鐘的升溫速度自室溫進行升溫,並於到達250℃(最高加熱溫度)後進行3小時加熱。冷卻至室溫後,藉由蒸鍍法於感光性樹脂組成物層(樹脂層)的表面的一部分形成厚度為5 μm的金屬層(銅層),而形成積層體1。 對積層體1的金屬層(銅層)及樹脂層的表面照射後述表中所記載的氣體種的電漿後,再次使用與所述同樣的感光性樹脂組成物,反覆進行感光性樹脂組成物層的形成、曝光、顯影及加熱而獲得積層體2。 於積層體2的表面進而與所述同樣地藉由蒸鍍法而形成金屬層(銅層),再次照射後述表中所記載的氣體種的電漿後,再次使用與所述同樣的感光性樹脂組成物,反覆進行感光性樹脂組成物層的形成、曝光、顯影及加熱而獲得積層體3。 另外,於實施例27~實施例30中,改變所述電漿處理而進行電暈放電處理來製作積層體2。Each photosensitive resin composition was subjected to pressure filtration through a filter having a pore width of 0.8 μm, and then a photosensitive resin composition layer was formed on a silicon wafer by a spin coating method. The silicon wafer to which the obtained photosensitive resin composition layer was applied was dried on a hot plate at 100° C. for 5 minutes to form a uniform photosensitive resin composition layer with a thickness described in the table below on the silicon wafer. . Using a stepper (Nikon NSR 2005 i9C), at a wavelength of 365 nm, the photosensitive resin composition layer on the silicon wafer was exposed at an exposure energy of 500 mJ/cm 2 , and the photosensitive resin composition layer was exposed by cyclohexanone. The exposed photosensitive resin composition layer (resin layer) was developed for 60 seconds to form pores having a diameter of 10 μm. Then, the temperature was raised from room temperature at a temperature increase rate of 10° C./min in a nitrogen atmosphere, and heating was performed for 3 hours after reaching 250° C. (maximum heating temperature). After cooling to room temperature, a metal layer (copper layer) having a thickness of 5 μm was formed on a part of the surface of the photosensitive resin composition layer (resin layer) by vapor deposition, thereby forming a laminate 1 . After irradiating the surfaces of the metal layer (copper layer) and the resin layer of the laminated body 1 with the plasma of the gas species described in the table below, the photosensitive resin composition was repeated using the same photosensitive resin composition as described above. Layer formation, exposure, development, and heating are performed to obtain the layered body 2 . A metal layer (copper layer) was formed on the surface of the layered body 2 by the vapor deposition method in the same manner as described above, and after irradiating the plasma of the gas species described in the table below again, the same photosensitivity as described above was used again. For the resin composition, the formation of the photosensitive resin composition layer, exposure, development, and heating were repeatedly performed to obtain the laminate 3 . Moreover, in Example 27 - Example 30, the said plasma process was changed, and the corona discharge process was performed, and the laminated body 2 was produced.

<評價> <<剝離缺陷評價>> (不進行加熱處理) 對以上所獲得的各積層體2及積層體3,以相對於樹脂層面而於垂直方向上寬度成為5 mm的方式分別切出樹脂層與樹脂層接觸的部分、及金屬層與樹脂層接觸的部分,對其剖面進行觀察,利用光學顯微鏡來確認一個切片中的樹脂層/樹脂層間、及金屬層/樹脂層間的剝落的有無。只要未產生剝落,則表示具有優異的接著性,而成為較佳的結果。 A:未產生剝落 B:產生1個~2個的剝落 C:產生3個~5個的剝落 D:產生6個以上的剝落 (進行加熱處理) 於氮氣中,以300℃將以上所獲得的積層體2及積層體3加熱3小時。其後,對各積層體,以相對於樹脂層面而於垂直方向上寬度成為5 mm的方式分別切出樹脂層與樹脂層接觸的部分、及金屬層與樹脂層接觸的部分,對其剖面進行觀察,利用光學顯微鏡來確認一個切片中的樹脂層/樹脂層間、及金屬層/樹脂層間的剝落的有無。只要未產生剝落,則表示具有優異的接著性,而成為較佳的結果。 A:未產生剝落 B:產生1個~2個的剝落 C:產生3個~5個的剝落 D:產生6個以上的剝落<Evaluation> <<Evaluation of Peeling Defect>> (without heat treatment) For each of the laminates 2 and 3 obtained above, the part where the resin layer contacts the resin layer and the part where the metal layer contacts the resin layer are cut out so that the width in the vertical direction with respect to the resin layer is 5 mm. A part, the cross section was observed, and the presence or absence of peeling between the resin layer/resin layer and the metal layer/resin layer in one section was confirmed with an optical microscope. As long as no peeling occurs, it shows that it has excellent adhesiveness, and it becomes a preferable result. A: No peeling occurred B: One to two peelings occurred C: 3 to 5 peelings occurred D: 6 or more peelings occurred (with heat treatment) The layered body 2 and the layered body 3 obtained above were heated at 300° C. for 3 hours in nitrogen. Then, with respect to each layered product, the part where the resin layer contacts the resin layer and the part where the metal layer contacts the resin layer was cut out so that the width in the vertical direction with respect to the resin layer would be 5 mm, and the cross-section was analyzed. The presence or absence of peeling between the resin layer/resin layer and the metal layer/resin layer in one section was observed and confirmed with an optical microscope. As long as no peeling occurs, it shows that it has excellent adhesiveness, and it becomes a preferable result. A: No peeling occurred B: One to two peelings occurred C: 3 to 5 peelings occurred D: 6 or more peelings occurred

[表2]   感光性樹脂組成物 電漿處理 積層體 剝離缺陷 (樹脂層/樹脂層間) 剝離缺陷 (金屬層/樹脂層間) 種類 膜厚 氣體種 有無照射 不進行加熱 300℃加熱後 不進行加熱 300℃加熱後 實施例1 感光性樹脂組成物1 16 μm 2 A B B B 實施例2 感光性樹脂組成物2 16 μm 2 A A A A 實施例3 感光性樹脂組成物3 16 μm 2 A A A A 實施例4 感光性樹脂組成物4 16 μm 2 B B A A 實施例5 感光性樹脂組成物5 16 μm 2 A B B B 實施例6 感光性樹脂組成物6 16 μm 2 B B A B 實施例7 感光性樹脂組成物7 16 μm 2 A A B B 實施例8 感光性樹脂組成物8 16 μm 2 A B A A 實施例9 感光性樹脂組成物9 16 μm 2 A A A A 比較例1 感光性樹脂組成物10 16 μm 2 C C D D 比較例2 感光性樹脂組成物11 16 μm 2 C D D D 比較例3 感光性樹脂組成物1 16 μm 2 B C D D 比較例4 感光性樹脂組成物2 16 μm 2 B C C D 比較例5 感光性樹脂組成物3 16 μm 2 B C C D 比較例6 感光性樹脂組成物4 16 μm 2 C C D D [表3]   感光性樹脂組成物 電漿處理 積層體 剝離缺陷 (樹脂層/樹脂層間) 剝離缺陷 (金屬層/樹脂層間) 種類 膜厚 氣體種 有無照射 不進行加熱 300℃加熱後 不進行加熱 300℃加熱後 實施例10 感光性樹脂組成物1 16 μm 3 B C B B 實施例11 感光性樹脂組成物2 16 μm 3 A A A A 實施例12 感光性樹脂組成物3 16 μm 3 A A A A 實施例13 感光性樹脂組成物4 16 μm 3 B C A A 實施例14 感光性樹脂組成物5 16 μm 3 B C B C 實施例15 感光性樹脂組成物6 16 μm 3 B C B B 實施例16 感光性樹脂組成物7 16 μm 3 A A B B 實施例17 感光性樹脂組成物8 16 μm 3 A B A A 實施例18 感光性樹脂組成物9 16 μm 3 A A A A 比較例7 感光性樹脂組成物10 16 μm 3 D D D D 比較例8 感光性樹脂組成物11 16 μm 3 D D D D 比較例9 感光性樹脂組成物1 16 μm 3 C C D D 比較例10 感光性樹脂組成物2 16 μm 3 C C D D 比較例11 感光性樹脂組成物3 16 μm 3 C C D D 比較例12 感光性樹脂組成物4 16 μm 3 C D D D [表4]   感光性樹脂組成物 電漿處理 積層體 剝離缺陷 (樹脂層/樹脂層間) 剝離缺陷 (金屬層/樹脂層間) 種類 膜厚 氣體種 有無照射 不進行加熱 300℃加熱後 不進行加熱 300℃加熱後 實施例19 感光性樹脂組成物1 16 μm 2 B C C C 實施例20 感光性樹脂組成物2 16 μm 2 B B B B 實施例21 感光性樹脂組成物1 16 μm 2 B B B B 實施例22 感光性樹脂組成物2 16 μm 2 B B B B [表5]   感光性樹脂組成物 電漿處理 積層體 剝離缺陷 (樹脂層/樹脂層間) 剝離缺陷 (金屬層/樹脂層間) 種類 膜厚 氣體種 有無照射 不進行加熱 300℃加熱後 不進行加熱 300℃加熱後 實施例23 感光性樹脂組成物1 16 μm 3 B C B C 實施例24 感光性樹脂組成物2 16 μm 3 B B B B 實施例25 感光性樹脂組成物1 16 μm 3 C C B C 實施例26 感光性樹脂組成物2 16 μm 3 B B B B [表6]   感光性樹脂組成物 電暈放電處理 積層體 剝離缺陷 (樹脂層/樹脂層間) 剝離缺陷 (金屬層/樹脂層間) 種類 膜厚 能量 有無照射 不進行加熱 300℃加熱後 不進行加熱 300℃加熱後 實施例27 感光性樹脂組成物1 16 μm 2000 J/m2 2 C C C C 實施例28 感光性樹脂組成物2 16 μm 2000 J/m2 2 B C B C 實施例29 感光性樹脂組成物1 16 μm 4000 J/m2 2 B C C C 實施例30 感光性樹脂組成物2 16 μm 4000 J/m2 2 B B B C [Table 2] Photosensitive resin composition plasma treatment Laminate Peel defect (resin layer/resin layer) Peel defects (between metal layers/resin layers) type Film thickness gas species With or without irradiation no heating After heating at 300°C no heating After heating at 300°C Example 1 Photosensitive resin composition 1 16 μm oxygen Have 2 A B B B Example 2 Photosensitive resin composition 2 16 μm oxygen Have 2 A A A A Example 3 Photosensitive resin composition 3 16 μm oxygen Have 2 A A A A Example 4 Photosensitive resin composition 4 16 μm oxygen Have 2 B B A A Example 5 Photosensitive resin composition 5 16 μm oxygen Have 2 A B B B Example 6 Photosensitive resin composition 6 16 μm oxygen Have 2 B B A B Example 7 Photosensitive resin composition 7 16 μm oxygen Have 2 A A B B Example 8 Photosensitive resin composition 8 16 μm oxygen Have 2 A B A A Example 9 Photosensitive resin composition 9 16 μm oxygen Have 2 A A A A Comparative Example 1 Photosensitive resin composition 10 16 μm oxygen Have 2 C C D D Comparative Example 2 Photosensitive resin composition 11 16 μm oxygen Have 2 C D D D Comparative Example 3 Photosensitive resin composition 1 16 μm none none 2 B C D D Comparative Example 4 Photosensitive resin composition 2 16 μm none none 2 B C C D Comparative Example 5 Photosensitive resin composition 3 16 μm none none 2 B C C D Comparative Example 6 Photosensitive resin composition 4 16 μm none none 2 C C D D [table 3] Photosensitive resin composition plasma treatment Laminate Peel defect (resin layer/resin layer) Peel defects (between metal layers/resin layers) type Film thickness gas species With or without irradiation no heating After heating at 300°C no heating After heating at 300°C Example 10 Photosensitive resin composition 1 16 μm oxygen Have 3 B C B B Example 11 Photosensitive resin composition 2 16 μm oxygen Have 3 A A A A Example 12 Photosensitive resin composition 3 16 μm oxygen Have 3 A A A A Example 13 Photosensitive resin composition 4 16 μm oxygen Have 3 B C A A Example 14 Photosensitive resin composition 5 16 μm oxygen Have 3 B C B C Example 15 Photosensitive resin composition 6 16 μm oxygen Have 3 B C B B Example 16 Photosensitive resin composition 7 16 μm oxygen Have 3 A A B B Example 17 Photosensitive resin composition 8 16 μm oxygen Have 3 A B A A Example 18 Photosensitive resin composition 9 16 μm oxygen Have 3 A A A A Comparative Example 7 Photosensitive resin composition 10 16 μm oxygen Have 3 D D D D Comparative Example 8 Photosensitive resin composition 11 16 μm oxygen Have 3 D D D D Comparative Example 9 Photosensitive resin composition 1 16 μm none none 3 C C D D Comparative Example 10 Photosensitive resin composition 2 16 μm none none 3 C C D D Comparative Example 11 Photosensitive resin composition 3 16 μm none none 3 C C D D Comparative Example 12 Photosensitive resin composition 4 16 μm none none 3 C D D D [Table 4] Photosensitive resin composition plasma treatment Laminate Peel defect (resin layer/resin layer) Peel defects (between metal layers/resin layers) type Film thickness gas species With or without irradiation no heating After heating at 300°C no heating After heating at 300°C Example 19 Photosensitive resin composition 1 16 μm Argon Have 2 B C C C Example 20 Photosensitive resin composition 2 16 μm Argon Have 2 B B B B Example 21 Photosensitive resin composition 1 16 μm nitrogen Have 2 B B B B Example 22 Photosensitive resin composition 2 16 μm nitrogen Have 2 B B B B [table 5] Photosensitive resin composition plasma treatment Laminate Peel defect (resin layer/resin layer) Peel defects (between metal layers/resin layers) type Film thickness gas species With or without irradiation no heating After heating at 300°C no heating After heating at 300°C Example 23 Photosensitive resin composition 1 16 μm Argon Have 3 B C B C Example 24 Photosensitive resin composition 2 16 μm Argon Have 3 B B B B Example 25 Photosensitive resin composition 1 16 μm nitrogen Have 3 C C B C Example 26 Photosensitive resin composition 2 16 μm nitrogen Have 3 B B B B [Table 6] Photosensitive resin composition corona discharge treatment Laminate Peel defect (resin layer/resin layer) Peel defects (between metal layers/resin layers) type Film thickness energy With or without irradiation no heating After heating at 300°C no heating After heating at 300°C Example 27 Photosensitive resin composition 1 16 μm 2000 J/m 2 Have 2 C C C C Example 28 Photosensitive resin composition 2 16 μm 2000 J/m 2 Have 2 B C B C Example 29 Photosensitive resin composition 1 16 μm 4000 J/m 2 Have 2 B C C C Example 30 Photosensitive resin composition 2 16 μm 4000 J/m 2 Have 2 B B B C

如根據所述結果而明確般,藉由本發明的製造方法而獲得的積層體中,樹脂層與樹脂層之間的密著性及金屬層與樹脂層的密著性的任一者均優異。另一方面,當使用聚醯亞胺前驅物等以外的樹脂作為樹脂時(比較例1、比較例2、比較例7及比較例8),樹脂層與樹脂層之間的密著性及金屬層與樹脂層的密著性差。另外,當不進行表面活性化處理時,樹脂層與樹脂層及金屬層與樹脂層的密著性的兩者或一者差(比較例3~比較例6、比較例9~比較例12)。As is clear from the results, the laminate obtained by the production method of the present invention is excellent in any of the adhesiveness between the resin layer and the resin layer and the adhesiveness between the metal layer and the resin layer. On the other hand, when a resin other than a polyimide precursor or the like was used as the resin (Comparative Example 1, Comparative Example 2, Comparative Example 7, and Comparative Example 8), the adhesion between the resin layer and the resin layer and the metal The adhesion between the layer and the resin layer is poor. In addition, when the surface activation treatment was not performed, both or one of the adhesion between the resin layer and the resin layer and the metal layer and the resin layer were poor (Comparative Examples 3 to 6, Comparative Examples 9 to 12) .

除將實施例2及實施例9的樹脂層的厚度分別變更為10 μm、20 μm、30 μm以外,同樣地進行來形成積層體並進行評價,結果可確認到為與實施例2及實施例9同樣良好的結果。A layered body was formed and evaluated in the same manner except that the thicknesses of the resin layers of Example 2 and Example 9 were changed to 10 μm, 20 μm, and 30 μm, respectively. 9 equally good results.

於實施例18中,使用感光性樹脂組成物2來形成第2層的樹脂層,此外同樣地進行,結果可獲得與實施例18同等的優異的效果。 於實施例18中,將金屬層(銅薄膜)變更為鋁薄膜,此外同樣地進行,結果為與實施例18同樣良好的結果。In Example 18, the photosensitive resin composition 2 was used to form the resin layer of the second layer, and as a result, the same excellent effects as in Example 18 were obtained. In Example 18, except having changed the metal layer (copper thin film) to an aluminum thin film, it carried out similarly, and the result was the same favorable result as Example 18.

100:半導體元件 101a~101d:半導體器件 101:積層體 102b~102d:貫穿電極 103a~103e:金屬凸塊 105:再配線層 110、110a、110b:底部填充層 115:絕緣層 120:配線基板 120a:表面電極 200:積層體 201:感光性樹脂組成物層(樹脂層) 203:金屬層100: Semiconductor Components 101a to 101d: Semiconductor Devices 101: Laminate 102b~102d: through electrodes 103a~103e: Metal bumps 105: Rewiring layer 110, 110a, 110b: underfill layer 115: Insulation layer 120: Wiring substrate 120a: Surface Electrode 200: Laminate 201: Photosensitive resin composition layer (resin layer) 203: Metal Layer

圖1是表示半導體元件的一實施形態的構成的概略圖。 圖2是表示藉由本發明的製造方法所獲得的積層體的一實施形態的構成的概略圖。FIG. 1 is a schematic diagram showing the configuration of an embodiment of a semiconductor element. FIG. 2 is a schematic diagram showing the configuration of an embodiment of a layered product obtained by the production method of the present invention.

200:積層體 200: Laminate

201:感光性樹脂組成物層(樹脂層) 201: Photosensitive resin composition layer (resin layer)

203:金屬層 203: Metal Layer

Claims (20)

一種積層體的製造方法,包括:感光性樹脂組成物層形成步驟,將感光性樹脂組成物應用於基板而形成為層狀;曝光步驟,對所述感光性樹脂組成物層進行曝光;顯影處理步驟,對經所述曝光的感光性樹脂組成物層進行負型顯影處理;金屬層形成步驟,於所述顯影處理後的感光性樹脂組成物層的表面的一部分形成金屬層;及表面活性化處理步驟,對所述金屬層的至少一部分及所述感光性樹脂組成物層的至少一部分進行表面活性化處理,進而包括再次依下述順序進行所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟,所述感光性樹脂組成物包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的樹脂,進而滿足所述樹脂包含聚合性基、及所述感光性樹脂組成物包含聚合性化合物的至少一者。 A method for manufacturing a laminate, comprising: a photosensitive resin composition layer forming step, applying the photosensitive resin composition to a substrate to form a layer; an exposing step, exposing the photosensitive resin composition layer; developing treatment step of performing negative development treatment on the exposed photosensitive resin composition layer; metal layer forming step of forming a metal layer on a part of the surface of the photosensitive resin composition layer after the development treatment; and surface activation The treatment step includes subjecting at least a part of the metal layer and at least a part of the photosensitive resin composition layer to a surface activation treatment, and further includes performing the photosensitive resin composition layer forming step, the photosensitive resin composition layer forming step, the In the exposure step and the development treatment step, the photosensitive resin composition comprises a resin selected from the group consisting of polyimide precursors, polyimide precursors, polybenzoxazole precursors and polybenzoxazoles, and further It suffices that the resin contains at least one of a polymerizable group and the photosensitive resin composition contains a polymerizable compound. 如請求項1所述的積層體的製造方法,其中依下述順序進行3次~7次所述感光性樹脂組成物層形成步驟、所述曝光步驟、及所述顯影處理步驟。 The method for producing a laminate according to claim 1, wherein the photosensitive resin composition layer forming step, the exposure step, and the development treatment step are performed 3 to 7 times in the following order. 如請求項1或請求項2所述的積層體的製造方法,其中所述金屬層包含銅。 The manufacturing method of the laminated body of Claim 1 or Claim 2 in which the said metal layer contains copper. 如請求項1或請求項2所述的積層體的製造方法,其中所述樹脂為聚醯亞胺前驅物或聚苯并噁唑前驅物。 The method for producing a laminate according to claim 1 or claim 2, wherein the resin is a polyimide precursor or a polybenzoxazole precursor. 如請求項1或請求項2所述的積層體的製造方法,其中所述樹脂包含由-Ar-L-Ar-所表示的部分結構;其中,Ar分別獨立地為芳香族基,L為包含可經氟原子取代的碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2-或-NHCO-、以及所述的兩個以上的組合的基。 The method for producing a layered product according to claim 1 or claim 2, wherein the resin contains a partial structure represented by -Ar-L-Ar-; wherein Ar is independently an aromatic group, and L is an aromatic group containing A fluorine atom-substituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, -O-, -CO-, -S-, -SO 2 - or -NHCO-, and a combination of two or more of the above. 如請求項1或請求項2所述的積層體的製造方法,其中所述表面活性化處理選自電漿處理及電暈放電處理中。 The method for producing a laminate according to claim 1 or claim 2, wherein the surface activation treatment is selected from plasma treatment and corona discharge treatment. 如請求項1或請求項2所述的積層體的製造方法,其中所述感光性樹脂組成物包含光聚合起始劑。 The manufacturing method of the laminated body of Claim 1 or Claim 2 whose said photosensitive resin composition contains a photopolymerization initiator. 如請求項1或請求項2所述的積層體的製造方法,其中所述樹脂的含量為所述感光性樹脂組成物中的固體成分的50質量%以上。 The manufacturing method of the laminated body of Claim 1 or Claim 2 whose content of the said resin is 50 mass % or more of the solid content in the said photosensitive resin composition. 如請求項1或請求項2所述的積層體的製造方法,其中所述感光性樹脂組成物包含二官能以上的聚合性化合物。 The manufacturing method of the laminated body of Claim 1 or Claim 2 in which the said photosensitive resin composition contains the polymerizable compound more than bifunctional. 如請求項1或請求項2所述的積層體的製造方法,其中所述樹脂包含選自由下述式(2)所表示的重複單元、下述式(4)所表示的重複單元、下述式(3)所表示的重複單元、以及下述式(X)所表示的重複單元所組成群組中的至少一種重複單元;
Figure 109142641-A0305-02-0130-2
式(2)中,A1及A2分別獨立地表示氧原子或NH,R111表示二價的有機基,R115表示四價的有機基,R113及R114分別獨立地表示氫原子或一價的有機基;
Figure 109142641-A0305-02-0130-3
式(4)中,R131表示二價的有機基,R132表示四價的有機基;
Figure 109142641-A0305-02-0130-4
式(3)中,R121表示二價的有機基,R122表示四價的有機基,R123及R124分別獨立地表示氫原子或一價的有機基;
Figure 109142641-A0305-02-0130-5
式(X)中,R133表示二價的有機基,R134表示四價的有機基。
The method for producing a laminate according to claim 1 or claim 2, wherein the resin contains a repeating unit represented by the following formula (2), a repeating unit represented by the following formula (4), the following The repeating unit represented by the formula (3) and at least one repeating unit in the group formed by the repeating unit represented by the following formula (X);
Figure 109142641-A0305-02-0130-2
In formula (2), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or Monovalent organic group;
Figure 109142641-A0305-02-0130-3
In formula (4), R 131 represents a divalent organic group, and R 132 represents a tetravalent organic group;
Figure 109142641-A0305-02-0130-4
In formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group;
Figure 109142641-A0305-02-0130-5
In formula (X), R 133 represents a divalent organic group, and R 134 represents a tetravalent organic group.
如請求項10所述的積層體的製造方法,其中所述A1及A2為氧原子。 The method for producing a laminate according to claim 10, wherein the A 1 and A 2 are oxygen atoms. 如請求項1或請求項2所述的積層體的製造方法,其中所述樹脂包含聚合性基。 The manufacturing method of the laminated body of Claim 1 or Claim 2 in which the said resin contains a polymerizable group. 如請求項12所述的積層體的製造方法,其中所述聚合性基為選自具有乙烯性不飽和鍵的基、烷氧基甲基、羥基甲基、醯氧基甲基、環氧基、氧雜環丁烷基、苯并噁唑啉基以及嵌段異氰酸酯基所組成群組中的至少一種的基。 The method for producing a laminate according to claim 12, wherein the polymerizable group is selected from the group consisting of a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an alkoxymethyl group, an epoxy group , at least one of the group consisting of oxetanyl, benzoxazoline and blocked isocyanate groups. 如請求項1或請求項2所述的積層體的製造方法,其中所述表面活性化處理為電漿處理。 The method for producing a laminate according to claim 1 or claim 2, wherein the surface activation treatment is plasma treatment. 如請求項14所述的積層體的製造方法,其中所述電漿處理中的原料氣體為氧、氫、氬、氮、氮及氫的混合氣體、或氬及氧的混合氣體。 The method for producing a layered body according to claim 14, wherein the source gas in the plasma treatment is oxygen, hydrogen, argon, nitrogen, a mixed gas of nitrogen and hydrogen, or a mixed gas of argon and oxygen. 如請求項1或請求項2所述的積層體的製造方法,其中藉由再次進行的所述感光性樹脂組成物層形成步驟、所述曝光步驟、以及所述顯影處理步驟所形成的顯影處理後的感光性樹脂組成物層為與進行了所述表面活性化處理的所述金屬層以及進行了所述表面活性化處理的所述感光性樹脂組成物層接觸的層。 The method for producing a layered product according to claim 1 or claim 2, wherein the development treatment is performed by performing the photosensitive resin composition layer forming step, the exposure step, and the development treatment step again. The subsequent photosensitive resin composition layer is a layer in contact with the metal layer subjected to the surface activation treatment and the photosensitive resin composition layer subjected to the surface activation treatment. 如請求項1或請求項2所述的積層體的製造方法,其中依下述順序進行3次~7次所述感光性樹脂組成物層形成 步驟、所述曝光步驟、所述顯影處理步驟、所述金屬層形成步驟、以及所述表面活性化處理步驟。 The method for producing a laminate according to claim 1 or claim 2, wherein the photosensitive resin composition layer formation is performed 3 to 7 times in the following order step, the exposure step, the development treatment step, the metal layer formation step, and the surface activation treatment step. 一種半導體元件的製造方法,其包括請求項1至請求項17中任一項所述的積層體的製造方法。 A method of manufacturing a semiconductor element including the method of manufacturing a laminate according to any one of Claims 1 to 17. 一種再配線層的製造方法,包括:藉由負型顯影而形成有包含感光性樹脂組成物層的所期望的圖案的步驟;金屬層形成步驟,在將藉由形成所述圖案的步驟所獲得的包含所述感光性樹脂組成物層的圖案的表面的一部分上形成金屬層;表面活性化處理步驟,對所述金屬層的至少一部分及包含所述感光性樹脂組成物層的圖案的至少一部分進行表面活性化處理;以及於所述金屬層的表面上積層感光性樹脂組成物層的步驟,形成所述圖案的步驟中的感光性樹脂組成物層、以及進行所述積層的步驟中的感光性樹脂組成物層分別為由包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中的樹脂的感光性樹脂組成物所形成的層,進而滿足所述樹脂包含聚合性基、及所述感光性樹脂組成物包含聚合性化合物的至少一者。 A method for producing a rewiring layer, comprising: a step of forming a desired pattern including a photosensitive resin composition layer by negative development; a step of forming a metal layer obtained by the step of forming the pattern A metal layer is formed on a part of the surface of the pattern containing the photosensitive resin composition layer; in the surface activation treatment step, at least a part of the metal layer and at least a part of the pattern containing the photosensitive resin composition layer are performing surface activation treatment; and the steps of laminating a photosensitive resin composition layer on the surface of the metal layer, the photosensitive resin composition layer in the step of forming the pattern, and the photosensitive resin composition layer in the step of laminating The photosensitive resin composition layers are respectively a layer formed by a photosensitive resin composition comprising a resin selected from the group consisting of polyimide precursors, polyimide precursors, polybenzoxazole precursors and polybenzoxazoles, Furthermore, it satisfies at least one that the resin contains a polymerizable group and the photosensitive resin composition contains a polymerizable compound. 如請求項19所述的再配線層的製造方法的製造方法,其中進行所述積層的步驟為於所述金屬層的表面、以及包 含所述感光性樹脂組成物層的圖案的表面上積層感光性樹脂組成物層的步驟。 The manufacturing method of the manufacturing method of the rewiring layer of claim 19, wherein the step of performing the lamination is to cover the surface of the metal layer and the The step of laminating a photosensitive resin composition layer on the surface of the pattern containing the photosensitive resin composition layer.
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TW200907567A (en) * 2007-04-04 2009-02-16 Asahi Kasei Emd Corp Photosensitive polyamic ester composition

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