TWI765654B - Composite ceramic sputtering target, method of preparing the same, and composite ceramic film and method of preparing the same - Google Patents

Composite ceramic sputtering target, method of preparing the same, and composite ceramic film and method of preparing the same Download PDF

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TWI765654B
TWI765654B TW110113001A TW110113001A TWI765654B TW I765654 B TWI765654 B TW I765654B TW 110113001 A TW110113001 A TW 110113001A TW 110113001 A TW110113001 A TW 110113001A TW I765654 B TWI765654 B TW I765654B
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composite ceramic
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TW202239731A (en
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陳美涵
柯伯賢
謝承諺
劉硯鳴
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光洋應用材料科技股份有限公司
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Abstract

The present invention provides a composite ceramic sputtering target, and the composite ceramic sputtering target includes a first metal oxide, a second metal oxide and a metal. A number of crystallization phase of the composite ceramic sputtering target is two; and based on the total weight of the composite ceramic sputtering target, an amount of the metal is more than or equal to 0.3 wt% and less than or equal to 30 wt%, and an amount of the second metal oxide is more than or equal to 0.5 wt% and less than or equal to 2 wt%. The composite ceramic sputtering target of the present invention has high relative density, and the metal has better dispersion uniformity and smaller grain size, which can improve the quality of the composite ceramic film made from the composite ceramic sputtering target, and also can simplify the preparing process of the composite ceramic film.

Description

複合陶瓷靶材、其製法以及複合陶瓷薄膜與其製法Composite ceramic target, method for making the same, and composite ceramic film and method for making the same

本創作係關於一種靶材、其製法以及以其濺鍍形成的薄膜與其製法,尤指一種複合陶瓷靶材、其製法以及以其濺鍍形成的複合陶瓷薄膜與其製法。This creation relates to a target, its manufacturing method, a thin film formed by sputtering and its manufacturing method, especially a composite ceramic target, its manufacturing method, a composite ceramic thin film formed by its sputtering, and its manufacturing method.

隨著環境安全以及空氣品質逐漸受到重視,與氣體感測器相關的技術發展也因此隨之受到關注。氣體感測器為一種能偵測空氣中氣體分子,並將其轉換成電信號呈現的一種裝置,因此目前已廣泛應用於偵測空氣中如氫氣、甲烷或天然氣等易燃易爆炸的氣體,或者如硫化氫、二氧化硫或氯氣等對人體健康有危害的氣體。With the increasing attention to environmental safety and air quality, the technological development related to gas sensors has also received attention. A gas sensor is a device that can detect gas molecules in the air and convert them into electrical signals. Therefore, it has been widely used in the detection of flammable and explosive gases such as hydrogen, methane or natural gas in the air. Or gases such as hydrogen sulfide, sulfur dioxide or chlorine that are harmful to human health.

氣體感測器根據不同的作用原理能夠分成不同類型,例如半導體式氣體感測器、電化學式氣體感測器以及催化燃燒式氣體感測器等等。而在半導體式氣體感測器的類型中,金屬氧化物半導體由於其偵測反應靈敏且成本較為低廉,因而成為偵測氣體最常選用的氣體感測器類型之一。Gas sensors can be classified into different types according to different working principles, such as semiconductor gas sensors, electrochemical gas sensors, and catalytic combustion gas sensors. Among the types of semiconductor gas sensors, metal oxide semiconductors have become one of the most commonly used types of gas sensors for gas detection due to their sensitive detection response and relatively low cost.

金屬氧化物如氧化鋅、氧化錫等,由於其特殊的結構而具有半導體的特性,因此當氣體分子吸附於金屬氧化物製成的薄膜表面時,會使其原本具有的導電特性產生變化,故而能藉由量測金屬氧化物薄膜之電阻值變化進而得到吸附氣體分子的濃度;此外,為了進一步提升偵測反應靈敏度,通常會另外選用如鉑、鈀、銅、金等多種金屬元素與金屬氧化物一同形成薄膜,藉此優化氣體感測器的性能。Metal oxides such as zinc oxide, tin oxide, etc., have semiconductor properties due to their special structures. Therefore, when gas molecules are adsorbed on the surface of the film made of metal oxides, their original conductive properties will be changed. The concentration of adsorbed gas molecules can be obtained by measuring the change of the resistance value of the metal oxide film; in addition, in order to further improve the sensitivity of the detection reaction, various metal elements such as platinum, palladium, copper, gold, etc. are usually selected and metal oxides together to form a thin film, thereby optimizing the performance of the gas sensor.

目前,使金屬元素與金屬氧化物共同形成薄膜所採用的技術手段包含旋轉塗佈法、共沉法以及溶膠凝膠法等非物理氣相沉積(Physical Vapor Deposition,PVD)的製備方法,惟以前述非PVD製程所製得的薄膜品質相對較差而難以維持良好的穩定性;然而,若使用金屬元素靶材與金屬氧化物靶材以共濺鍍的方式製備薄膜,則需要同時使用直流磁控濺鍍(DC magnetron sputtering)以及射頻磁控濺鍍(Radio-Frequency magnetron sputtering)兩種濺鍍方式,不僅增加製備流程的複雜度,且摻混於薄膜中的金屬元素亦會有分佈不均以及粒徑偏大而導致薄膜產生裂痕的問題,影響後續氣體偵測的應用。At present, the technical means used to form thin films with metal elements and metal oxides include spin coating, co-precipitation, and sol-gel methods and other non-physical vapor deposition (Physical Vapor Deposition, PVD) preparation methods. The quality of the films produced by the aforementioned non-PVD process is relatively poor and it is difficult to maintain good stability; however, if the film is prepared by co-sputtering with a metal element target and a metal oxide target, it is necessary to use a DC magnetron at the same time. Sputtering (DC magnetron sputtering) and radio-frequency magnetron sputtering (Radio-Frequency magnetron sputtering) two sputtering methods not only increase the complexity of the preparation process, but also have uneven distribution of metal elements mixed in the film. The problem of cracks in the film caused by the large particle size affects the application of subsequent gas detection.

有鑑於現有技術所面臨的缺陷,本創作之目的在於提供含有添加金屬的複合陶瓷靶材,且所述添加金屬於複合陶瓷靶材中具有較佳的分散均勻度以及較小的粒徑,進而能改善濺鍍所形成之薄膜的品質並同時簡化薄膜的製程,以利後續氣體偵測之應用。In view of the defects faced by the prior art, the purpose of this creation is to provide a composite ceramic target material containing an additive metal, and the additive metal in the composite ceramic target material has better dispersion uniformity and smaller particle size, and further It can improve the quality of the thin film formed by sputtering and simplify the process of thin film at the same time, so as to facilitate the application of subsequent gas detection.

為達成前述目的,本創作提供一種複合陶瓷靶材,其包含一第一金屬氧化物、一第二金屬氧化物及一添加金屬,該複合陶瓷靶材之結晶相相數為兩相,且以該複合陶瓷靶材的總重為基準,該添加金屬的含量係大於或等於0.3重量百分比(weight percentage,wt%)且小於或等於30 wt%,該第二金屬氧化物的含量係大於或等於0.5 wt%且小於或等於2 wt%;其中,該第一金屬氧化物包含二氧化錫(SnO 2)、二氧化鈦(TiO 2)、一氧化鋅(ZnO)、三氧化二銦(In 2O 3)、三氧化鉬(MoO 3)、三氧化鎢(WO 3)、二氧化鋯(ZrO 2)或其組合,該第二金屬氧化物包含一氧化銅(CuO)、三氧化二銻(Sb 2O 3)、一氧化鈷(CoO)、二氧化錳(MnO 2)或其組合,該添加金屬包含鈀(palladium,Pd)、鉑(platinum,Pt)、釕(ruthenium,Ru)、金(gold,Au)、銀(silver,Ag)、銦(indium,In)或其組合。 In order to achieve the aforementioned object, the present invention provides a composite ceramic target material, which comprises a first metal oxide, a second metal oxide and an additive metal, the number of crystal phases of the composite ceramic target material is two phases, and the Based on the total weight of the composite ceramic target, the content of the added metal is greater than or equal to 0.3 weight percent (weight percentage, wt %) and less than or equal to 30 wt %, and the content of the second metal oxide is greater than or equal to 0.5 wt % and less than or equal to 2 wt %; wherein, the first metal oxide comprises tin dioxide (SnO 2 ), titanium dioxide (TiO 2 ), zinc monoxide (ZnO), indium trioxide (In 2 O 3 ) ), molybdenum trioxide (MoO 3 ), tungsten trioxide (WO 3 ), zirconium dioxide (ZrO 2 ) or a combination thereof, the second metal oxide comprises copper monoxide (CuO), antimony trioxide (Sb 2 ) O 3 ), cobalt monoxide (CoO), manganese dioxide (MnO 2 ) or a combination thereof, the additive metal includes palladium (Pd), platinum (Pt), ruthenium (Ru), gold (gold) , Au), silver (silver, Ag), indium (indium, In) or a combination thereof.

據此,藉由控制該複合陶瓷靶材的結晶相相數以及該第二金屬氧化物和該添加金屬之含量,能使該複合陶瓷靶材具有較高的相對密度以及該添加金屬具有較佳的分散均勻度與較小的粒徑,進而可形成添加金屬分散均勻、粒徑小且不具有裂痕之良好品質的複合陶瓷薄膜,有利於後續氣體偵測之應用;此外,本創作提供之複合陶瓷靶材係同時含有添加金屬與金屬氧化物之單一靶材,故可避免如共濺鍍或共蒸鍍需要選用兩種不同材料之靶材並且分別調控製程參數的問題,而具有簡化製備複合陶瓷薄膜之製程的優點。Accordingly, by controlling the number of crystal phases of the composite ceramic target and the contents of the second metal oxide and the additive metal, the composite ceramic target can have a higher relative density and the additive metal has a better The dispersion uniformity and the smaller particle size of the composite ceramic film can form a good quality composite ceramic film with uniform dispersion of the added metal, small particle size and no cracks, which is beneficial to the application of subsequent gas detection; in addition, the composite ceramic film provided by this creation The ceramic target contains a single target with added metal and metal oxide at the same time, so it can avoid the problem of selecting two different materials for the target and adjusting the process parameters separately, such as co-sputtering or co-evaporation. The advantages of the ceramic thin film process.

依據本創作,該第一金屬氧化物為該複合陶瓷靶材中的主要成份;應理解的是,該複合陶瓷靶材並非僅含有該第一金屬氧化物、該第二金屬氧化物及該添加金屬,在不影響本創作所能達成功效的前提下,該複合陶瓷靶材除了含有該第一金屬氧化物、該第二金屬氧化物及該添加金屬之外,亦可含有其他成份。According to the present invention, the first metal oxide is the main component in the composite ceramic target; it should be understood that the composite ceramic target does not only contain the first metal oxide, the second metal oxide and the additive Metal, on the premise that the effect of the present invention is not affected, the composite ceramic target may contain other components besides the first metal oxide, the second metal oxide and the additive metal.

於本創作的一實施態樣中,該複合陶瓷靶材之相對密度係大於或等於60%。於此實施態樣,該複合陶瓷靶材能適用於蒸鍍(deposition)製程製備複合陶瓷薄膜。於本創作的另一實施態樣中,該複合陶瓷靶材之相對密度係大於或等於95%。於此實施態樣,該複合陶瓷靶材能適用於濺鍍(sputtering)製程製備複合陶瓷薄膜。In an embodiment of the present invention, the relative density of the composite ceramic target is greater than or equal to 60%. In this embodiment, the composite ceramic target can be used for the deposition process to prepare the composite ceramic thin film. In another embodiment of the present invention, the relative density of the composite ceramic target is greater than or equal to 95%. In this embodiment, the composite ceramic target can be used in a sputtering process to prepare a composite ceramic thin film.

較佳的,以該複合陶瓷靶材的總重為基準,該添加金屬的含量係大於或等於9 wt%且小於或等於15 wt%。Preferably, based on the total weight of the composite ceramic target, the content of the additive metal is greater than or equal to 9 wt % and less than or equal to 15 wt %.

於本創作的一實施態樣中,該第一金屬氧化物為二氧化錫,該第二金屬氧化物為一氧化銅,該添加金屬為鈀。In an embodiment of the present invention, the first metal oxide is tin dioxide, the second metal oxide is copper monoxide, and the additive metal is palladium.

較佳的,該添加金屬的分散均勻度指標(uniformity index,U%)係小於或等於10%;其中,該添加金屬的分散均勻度指標係由該複合陶瓷靶材在不同位置所測得之添加金屬重量佔比的多組數據經由以下算式所求得:(所述多組數據中添加金屬重量佔比的最大值 - 所述多組數據中添加金屬重量佔比的最小值) / 2 × 所述多組數據中添加金屬重量佔比的平均值 × 100%。具體而言,所述多組數據中添加金屬重量佔比的最大值(M max)、最小值(M min)以及平均值(M avg)可代入下列算式求得該添加金屬的分散均勻度指標。

Figure 02_image001
於此,該添加金屬的分散均勻度指標即代表在該複合陶瓷靶材的不同位置添加金屬重量佔比之變化率,因此該分散均勻度指標的數值越低表示該添加金屬的重量佔比變化率越小,即在複合陶瓷靶材不同位置之添加金屬的重量佔比近似,進而能夠用以評估該添加金屬於該複合陶瓷靶材中整體分散均勻的情況。舉例而言,可在靶材中心取一點與距離所述中心10公分的圓周上每隔90度各取一點,以獲得五處位置,接著以能量散射X射線譜(Energy Dispersive Spectrometer,EDS)分析所述五處位置中添加金屬之重量百分比數據,隨後將所測得五組數據中添加金屬重量百分比的最大值、最小值以及平均值代入前述算式,即可獲得該添加金屬之分散均勻度指標。 Preferably, the uniformity index (uniformity index, U%) of the added metal is less than or equal to 10%; wherein, the uniformity index of the added metal is measured by the composite ceramic target at different positions. The multiple sets of data of the added metal weight ratio are obtained by the following formula: (the maximum value of the added metal weight ratio in the multiple sets of data - the minimum value of the added metal weight ratio in the multiple sets of data) / 2 × The average value of the weight ratio of added metals in the multiple sets of data × 100%. Specifically, the maximum value (M max ), the minimum value (M min ) and the average value (M avg ) of the added metal weight ratio in the multiple sets of data can be substituted into the following formula to obtain the dispersion uniformity index of the added metal .
Figure 02_image001
Here, the dispersion uniformity index of the added metal represents the change rate of the weight ratio of the added metal at different positions of the composite ceramic target. Therefore, the lower the value of the dispersion uniformity index, the change in the weight ratio of the added metal. The smaller the ratio is, that is, the weight ratio of the added metal in different positions of the composite ceramic target is similar, which can be used to evaluate the overall uniform dispersion of the added metal in the composite ceramic target. For example, one point can be taken at the center of the target material and one point at every 90 degrees on the circumference of 10 cm from the center to obtain five positions, and then analyzed by Energy Dispersive Spectrometer (EDS) The weight percentage data of the added metal in the five positions, and then the maximum, minimum and average weight percentage of the added metal in the five groups of data measured are substituted into the aforementioned formula, and the dispersion uniformity index of the added metal can be obtained. .

較佳的,該添加金屬的最大粒徑係小於或等於1毫米(mm)。具體而言,所述添加金屬的最大粒徑係指在該複合陶瓷靶材之金相中所測得該添加金屬的粒徑之最大值。更佳的,該添加金屬的最大粒徑係小於或等於0.8 mm。Preferably, the maximum particle size of the added metal is less than or equal to 1 millimeter (mm). Specifically, the maximum particle size of the added metal refers to the maximum value of the particle size of the added metal measured in the metallographic phase of the composite ceramic target. More preferably, the maximum particle size of the added metal is less than or equal to 0.8 mm.

於本創作的一實施態樣中,該添加金屬的最大粒徑係大於或等於0.1 mm且小於或等於1 mm;於本創作的另一實施態樣中,該添加金屬的最大粒徑係大於或等於0.1 mm且小於或等於0.8 mm。In an embodiment of the present invention, the maximum particle size of the added metal is greater than or equal to 0.1 mm and less than or equal to 1 mm; in another embodiment of the present invention, the maximum particle size of the added metal is greater than or equal to 1 mm. or equal to 0.1 mm and less than or equal to 0.8 mm.

為達成前述目的,本創作另提供一種複合陶瓷靶材的製法,其包含下步驟:步驟(a):混合一第一金屬氧化物原料、一第二金屬氧化物原料及一添加金屬原料,以得到一混合原料;步驟(b):將該混合原料進行冷均壓(cold isostatic pressing,CIP),以獲得一坯體;以及步驟(c):將該坯體置於氧氣氣氛且溫度係大於或等於1200°C且小於或等於1400°C之條件下進行燒結,以得到該複合陶瓷靶材;其中,該複合陶瓷靶材之結晶相相數為兩相,且以該混合原料之總重為基準,該添加金屬原料的添加量係大於或等於0.3 wt%且小於或等於30 wt%,該第二金屬氧化物原料的含量係大於或等於0.5 wt%且小於或等於2 wt%;其中,該第一金屬氧化物原料包含二氧化錫原料、二氧化鈦原料、一氧化鋅原料、三氧化二銦原料、三氧化鉬原料、三氧化鎢原料、二氧化鋯原料或其組合,該第二金屬氧化物原料包含一氧化銅原料、三氧化二銻原料、一氧化鈷原料、二氧化錳原料或其組合,該添加金屬原料包含鈀原料、鉑原料、釕原料、金原料、銀原料、銦原料或其組合。In order to achieve the aforementioned object, the present invention further provides a method for making a composite ceramic target, which includes the following steps: Step (a): mixing a first metal oxide raw material, a second metal oxide raw material and an additive metal raw material to obtain a Obtaining a mixed raw material; step (b): subjecting the mixed raw material to cold isostatic pressing (CIP) to obtain a green body; and step (c): placing the green body in an oxygen atmosphere at a temperature greater than or equal to 1200 ° C and less than or equal to 1400 ° C for sintering to obtain the composite ceramic target; wherein, the number of crystal phases of the composite ceramic target is two phases, and the total weight of the mixed raw materials As a benchmark, the addition amount of the added metal raw material is greater than or equal to 0.3 wt% and less than or equal to 30 wt%, and the content of the second metal oxide raw material is greater than or equal to 0.5 wt% and less than or equal to 2 wt%; wherein , the first metal oxide raw material comprises tin dioxide raw material, titanium dioxide raw material, zinc monoxide raw material, indium trioxide raw material, molybdenum trioxide raw material, tungsten trioxide raw material, zirconium dioxide raw material or combination thereof, the second metal oxide raw material The oxide raw materials include copper monoxide raw materials, antimony trioxide raw materials, cobalt monoxide raw materials, manganese dioxide raw materials or combinations thereof, and the additive metal raw materials include palladium raw materials, platinum raw materials, ruthenium raw materials, gold raw materials, silver raw materials, and indium raw materials or a combination thereof.

藉由主要控制該混合原料的壓製方式、該添加金屬原料與該第二金屬氧化物的添加量以及該坯體進行燒結時的環境氣氛與燒結溫度,並同時控制該複合陶瓷靶材之結晶相相數,以本創作之製法所製得的複合陶瓷靶材因而具有相對密度高且添加金屬的分散均勻度較佳以及粒徑較小的特點,而有利於進一步形成高品質的複合陶瓷薄膜。By mainly controlling the pressing method of the mixed raw material, the added amount of the added metal raw material and the second metal oxide, the ambient atmosphere and the sintering temperature when the green body is sintered, and simultaneously controlling the crystal phase of the composite ceramic target Therefore, the composite ceramic target prepared by the method of this invention has the characteristics of high relative density, good dispersion uniformity of added metal and small particle size, which is conducive to further forming high-quality composite ceramic films.

較佳的,該添加金屬原料的平均粒徑係小於80微米(μm),該第一金屬氧化物原料的平均粒徑係小於1 μm,該第二金屬氧化物原料的平均粒徑係小於1 μm。Preferably, the average particle size of the added metal raw material is less than 80 micrometers (μm), the average particle size of the first metal oxide raw material is less than 1 μm, and the average particle size of the second metal oxide raw material is less than 1 μm. μm.

依據本創作,該第一金屬氧化物原料以及該第二金屬氧化物在與該添加金屬原料混合前可先進行一細化步驟,以得到特定平均粒徑以及分散無團聚之細化原料。舉例而言,該細化步驟可為直接以氧化鋯球對原料進行球磨細化;或者先將原料、氧化鋯球、水以及分散劑混合進行球磨後,再透過噴霧造粒以獲得細化原料,但不限於此。According to the present invention, before the first metal oxide raw material and the second metal oxide are mixed with the additive metal raw material, a refinement step can be performed to obtain a specific average particle size and dispersed and non-agglomerated refinement raw materials. For example, the refining step can be directly ball-milling and refining the raw material with zirconia balls; or firstly mixing the raw material, zirconia balls, water and dispersant for ball-milling, and then spray granulation to obtain the refined raw material , but not limited to this.

較佳的,該步驟(a)還包含以下步驟:步驟(a1):混合該第一金屬氧化物原料以及該第二金屬氧化物原料,以得到一金屬氧化物混合原料;步驟(a2):將該金屬氧化物混合原料經過一球磨細化步驟使平均粒徑小於1 μm,接著再透過一噴霧造粒步驟獲得一細化之金屬氧化物混合原料;以及步驟(a3):將該細化之金屬氧化物混合原料以及該添加金屬原料進行球磨混合,以得到該混合原料。Preferably, the step (a) further comprises the following steps: step (a1): mixing the first metal oxide raw material and the second metal oxide raw material to obtain a metal oxide mixed raw material; step (a2): The metal oxide mixed raw material is subjected to a ball milling refinement step to make the average particle size less than 1 μm, and then a spray granulation step is performed to obtain a refined metal oxide mixed raw material; and step (a3): the refinement The metal oxide mixed raw material and the added metal raw material are ball-milled and mixed to obtain the mixed raw material.

為達成前述目的,本創作另提供一種複合陶瓷薄膜,其係由前述之複合陶瓷靶材經由濺鍍或蒸鍍所製成。In order to achieve the aforementioned objective, the present invention further provides a composite ceramic thin film, which is made from the aforementioned composite ceramic target through sputtering or vapor deposition.

據此,該複合陶瓷薄膜中所含之添加金屬具有較佳的分散均勻度以及較小的粒徑,且不會產生裂痕而保有良好的品質,有利於後續氣體偵測之應用。Accordingly, the additive metal contained in the composite ceramic film has better dispersion uniformity and smaller particle size, and does not produce cracks and maintains good quality, which is beneficial to the application of subsequent gas detection.

為達成前述目的,本創作另提供一種複合陶瓷薄膜的製法,其包含以下步驟:以射頻磁控濺鍍方式濺鍍或蒸鍍前述之複合陶瓷靶材,以得到該複合陶瓷薄膜。In order to achieve the aforementioned objective, the present invention further provides a method for producing a composite ceramic film, which includes the following steps: sputtering or vapor-depositing the aforementioned composite ceramic target by means of radio frequency magnetron sputtering to obtain the composite ceramic film.

據此,由於本創作提供之複合陶瓷靶材係同時包含添加金屬與金屬氧化物於單一靶材中,故能夠以射頻磁控濺鍍方式進行濺鍍或藉由蒸鍍的方式即可製得複合陶瓷薄膜,相較於以往共濺鍍需要選用不同材料之靶材並分別調控製程參數,具有簡化製程的優點。Accordingly, since the composite ceramic target provided by the present invention includes both added metal and metal oxide in a single target, it can be prepared by sputtering by radio frequency magnetron sputtering or by evaporation. Compared with the previous co-sputtering, the composite ceramic thin film needs to select targets of different materials and adjust the process parameters separately, which has the advantage of simplifying the process.

較佳的,該複合陶瓷靶材係於室溫下、壓力大於或等於3毫托耳(mtorr)且小於或等於20 mtorr,濺鍍功率大於或等於250瓦(W)且小於或等於350 W之條件下濺鍍形成該複合陶瓷薄膜。Preferably, the composite ceramic target is at room temperature, the pressure is greater than or equal to 3 mtorr (mtorr) and less than or equal to 20 mtorr, and the sputtering power is greater than or equal to 250 watts (W) and less than or equal to 350 W The composite ceramic thin film is formed by sputtering under the conditions.

較佳的,該複合陶瓷靶材係於1安培/秒至5安培/秒之蒸鍍速率進行蒸鍍以形成該複合陶瓷薄膜。Preferably, the composite ceramic target is evaporated at an evaporation rate of 1 ampere/sec to 5 ampere/sec to form the complex ceramic thin film.

為驗證本創作提供之複合陶瓷靶材具有兩相的結晶相、較高的相對密度以及其所含有的添加金屬具有較佳的分散均勻度和較小的粒徑,以下列舉數種實施例詳細說明本創作的實施方式,所屬技術領域中具有通常知識者可經由本說明書之內容輕易地了解本創作所能達成之優點以及功效,並於不悖離本創作之精神下進行各種修飾與變更,以施行或應用本創作之內容。In order to verify that the composite ceramic target provided by this creation has a two-phase crystalline phase, a relatively high relative density, and the additive metal contained in it has better dispersion uniformity and smaller particle size, several examples are listed below in detail. Describe the embodiment of this creation, those with ordinary knowledge in the art can easily understand the advantages and effects that this creation can achieve through the content of this specification, and make various modifications and changes without departing from the spirit of this creation, To implement or apply the content of this creation.

實施例Example 11 to 55 :複合陶瓷靶材: Composite ceramic target

實施例1至5係選用二氧化錫作為第一金屬氧化物、選用一氧化銅作為第二金屬氧化物以及選用鈀作為添加金屬,並根據下表1所列的成份比例秤取適當的二氧化錫粉末、一氧化銅粉末以及鈀粉末。接著,先將二氧化錫粉末以及一氧化銅粉末置於含有氧化鋯球、去離子水以及陽離子型分散劑之溶液中進行細化,隨後以噴霧造粒製得細化之二氧化錫與一氧化銅混合粉末,其各自的平均粒徑皆小於1 μm。Embodiments 1 to 5 are selected tin dioxide as the first metal oxide, selected copper monoxide as the second metal oxide and selected palladium as the additive metal, and weighed appropriate dioxide according to the composition ratio listed in table 1 below. Tin powder, copper monoxide powder and palladium powder. Next, place the tin dioxide powder and the copper monoxide powder in a solution containing zirconia balls, deionized water and a cationic dispersant for refining, and then spray granulation to obtain the refined tin dioxide and a cationic dispersant. The copper oxide mixed powders each have an average particle size of less than 1 μm.

隨後,取平均粒徑小於80 μm之鈀粉末並與前述細化之二氧化錫與一氧化銅混合粉末以氧化鋯球進行球磨混合,以得到混合原料,接著,透過冷均壓製程將所述混合原料壓製成坯體,再將所述坯體置於溫度為1300°C、氧氣氣氛之條件下進行燒結,以得到實施例1至5之複合陶瓷靶材。Then, take the palladium powder with an average particle size of less than 80 μm and mix it with the above-mentioned refined tin dioxide and copper monoxide mixed powder with zirconia balls for ball milling to obtain mixed raw materials. The mixed raw materials are pressed into a green body, and then the green body is placed at a temperature of 1300° C. and sintered under an oxygen atmosphere to obtain the composite ceramic targets of Examples 1 to 5.

比較例Comparative example 11 to 33 :複合陶瓷靶材: Composite ceramic target

比較例1至3的製作流程係與實施例1至5相似,其不同處在於比較例1以及比較例2分別選擇含量較低與含量較高的添加金屬;比較例3則於製作過程中沒有加入第二金屬氧化物,除此之外,比較例1至3的其餘製作流程皆與實施例1至5相同並最後製得比較例1至3之複合陶瓷靶材。比較例1至3所選用各成份的比例同樣列於下表1中。The production process of Comparative Examples 1 to 3 is similar to that of Examples 1 to 5, the difference is that Comparative Example 1 and Comparative Example 2 select the additive metal with lower content and higher content respectively; Except that the second metal oxide was added, the rest of the manufacturing process of Comparative Examples 1 to 3 was the same as that of Examples 1 to 5, and finally the composite ceramic targets of Comparative Examples 1 to 3 were prepared. The proportions of the components used in Comparative Examples 1 to 3 are also listed in Table 1 below.

靶材結晶相Target crystal phase

靶材結晶相係以X射線繞射分析儀(廠牌:Rigaku,型號:Ultima IV)並以每分鐘2.4°的掃描速度、繞射角度由2θ為20°掃描至2θ為80°的掃描條件對實施例1至5之複合陶瓷靶材進行分析,結果如圖1所示。The crystal phase of the target material is scanned by an X-ray diffraction analyzer (brand: Rigaku, model: Ultima IV) at a scanning speed of 2.4° per minute, and the diffraction angle is scanned from 2θ of 20° to 2θ of 80°. The composite ceramic targets of Examples 1 to 5 are analyzed, and the results are shown in FIG. 1 .

由圖1的結果可見,實施例1至5之XRD分析結果的數個明顯衍射峰可分別對應至下方所列出二氧化錫之XRD圖譜以及鈀之XRD圖譜,除此之外,於實施例1至5之XRD分析結果中沒有觀察到其他明顯的衍射峰。由此可知,在實施例1至5之複合陶瓷靶材中,鈀與二氧化錫兩者間並無進一步發生反應而各自形成獨立的結晶相,也就是說,本創作提供之複合陶瓷靶材確實具有分別由添加金屬以及第一金屬氧化物二者各自形成的兩相結晶相。It can be seen from the results in FIG. 1 that several obvious diffraction peaks in the XRD analysis results of Examples 1 to 5 can be respectively corresponding to the XRD patterns of tin dioxide and the XRD patterns of palladium listed below. No other obvious diffraction peaks were observed in the XRD analysis results of 1 to 5. It can be seen that in the composite ceramic targets of Examples 1 to 5, there is no further reaction between palladium and tin dioxide, and they form independent crystalline phases. That is to say, the composite ceramic targets provided by this creation There is indeed a two-phase crystalline phase formed from both the additive metal and the first metal oxide, respectively.

靶材相對密度Target relative density

靶材相對密度係採用阿基米德法量測,具體而言,實施例1至5以及比較例1至3之複合陶瓷靶材先分別以線切割的方式裁切成1公分×1公分×1公分的待測樣品,接著將各待測樣品浸入水中,於水溫設定為25°C的條件下量測各待測樣品之相對密度,其計算方式為:乾重 / (濕重 – 水中重) × 100%。實施例1至5以及比較例1至3的相對密度係列於下表1中。The relative density of the target is measured by the Archimedes method. Specifically, the composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3 are respectively cut into 1 cm × 1 cm × by wire cutting. 1 cm of the sample to be tested, then immerse each sample to be tested in water, and measure the relative density of each sample to be tested under the condition that the water temperature is set to 25°C, the calculation method is: dry weight / (wet weight – water weight) × 100%. The relative densities of Examples 1 to 5 and Comparative Examples 1 to 3 are listed in Table 1 below.

由表1的結果可見,實施例1至5之複合陶瓷靶材所測得之相對密度皆大於或等於95%,顯示出具有良好的靶材品質;反觀比較例3的結果,比較例3之複合陶瓷靶材於製作過程中沒有加入第二金屬氧化物,其所測得之相對密度僅有80%。由此可知,複合陶瓷靶材中另含有第二金屬氧化物確實能提升相對密度而獲得較佳的靶材品質,而有利於後續濺鍍形成複合陶瓷薄膜。 表1:實施例1至5以及比較例1至3之複合陶瓷靶材的組成以及特性分析。   第一金屬氧化物 添加金屬 第二金屬氧化物 相對密度 (%) 添加金屬分散均勻度指標 (%) 添加金屬最大粒徑 (mm) 實施例1 SnO 2 0.3 wt% Pd 1 wt% CuO 95.1 10 0.8 實施例2 SnO 2 5.0 wt% Pd 1 wt% CuO 95.4 7.5 0.6 實施例3 SnO 2 8.5 wt% Pd 1 wt% CuO 95.5 6.3 0.3 實施例4 SnO 2 12 wt% Pd 1 wt% CuO 96 6.2 0.2 實施例5 SnO 2 30 wt% Pd 1 wt% CuO 95.6 8.6 0.8 比較例1 SnO 2 0.03 wt% Pd 1 wt% CuO 95.8 15.2 1.1 比較例2 SnO 2 35 wt% Pd 1 wt% CuO 95.7 13.2 1.2 比較例3 SnO 2 12 wt% Pd -- 80 6.1 0.3 It can be seen from the results in Table 1 that the relative densities measured by the composite ceramic targets of Examples 1 to 5 are all greater than or equal to 95%, showing good target quality; The composite ceramic target has no second metal oxide added during the production process, and the measured relative density is only 80%. It can be seen that the second metal oxide contained in the composite ceramic target can indeed increase the relative density to obtain better target quality, which is beneficial to the subsequent sputtering to form the composite ceramic thin film. Table 1: Composition and characteristic analysis of the composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3. first metal oxide add metal second metal oxide Relative density (%) Add metal dispersion uniformity index (%) Maximum particle size of added metal (mm) Example 1 SnO 2 0.3 wt% Pd 1 wt% CuO 95.1 10 0.8 Example 2 SnO 2 5.0 wt% Pd 1 wt% CuO 95.4 7.5 0.6 Example 3 SnO 2 8.5 wt% Pd 1 wt% CuO 95.5 6.3 0.3 Example 4 SnO 2 12 wt% Pd 1 wt% CuO 96 6.2 0.2 Example 5 SnO 2 30 wt% Pd 1 wt% CuO 95.6 8.6 0.8 Comparative Example 1 SnO 2 0.03 wt% Pd 1 wt% CuO 95.8 15.2 1.1 Comparative Example 2 SnO 2 35 wt% Pd 1 wt% CuO 95.7 13.2 1.2 Comparative Example 3 SnO 2 12 wt% Pd -- 80 6.1 0.3

試驗例Test example 11 :添加金屬之分散均勻度指標與粒徑大小: Dispersion uniformity index and particle size of added metal

本試驗例係選用實施例1至5以及比較例1至3之複合陶瓷靶材,並藉由掃描式電子顯微鏡(廠牌為HITACHI;型號為S-3400N)獲得各組別靶材之金相,接著依照下述方式對靶材中添加金屬之分散均勻度指標以及粒徑大小進行評估。In this test example, the composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3 were selected, and the metallographic images of each group of targets were obtained by scanning electron microscope (brand: HITACHI; model: S-3400N). , and then evaluate the dispersion uniformity index and particle size of the added metal in the target material in the following manner.

(1)(1) 分散均勻度指標Dispersion uniformity index

針對實施例1至5以及比較例1至3之複合陶瓷靶材,於靶材中心點(A處)與距離中心點10公分的圓周上每隔90度各取一點(B處至E處),總共取得五處位置之五張金相,接著以元素分析儀(廠牌為HORIBA;型號為7021-H)各別分析五張金相中添加金屬之重量佔比,得到五組添加金屬重量佔比的數據,並依此可得到在五組數據中添加金屬重量佔比的最大值(M max)、最小值(M min)以及平均值(M avg),再將前述數值代入以下算式,即可獲得實施例1至5以及比較例1至3之複合陶瓷靶材中添加金屬之分散均勻度指標。其中,分散均勻度指標的數值越低則代表具有較佳的分散均勻性,其結果列於上表1中。

Figure 02_image001
For the composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3, take a point at the center of the target (at A) and every 90 degrees on the circumference of 10 cm from the center (at B to E) , a total of five metallographic images at five positions were obtained, and then an elemental analyzer (brand HORIBA; model 7021-H) was used to analyze the weight ratio of the added metal in each of the five metallographic images, and five sets of data of the added metal weight ratio were obtained. , and according to this, the maximum value (M max ), the minimum value (M min ) and the average value (M avg ) of the metal weight ratio in the five sets of data can be obtained, and then the aforementioned values can be substituted into the following formula, and the implementation can be obtained. Dispersion uniformity index of the added metal in the composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3. Among them, the lower the numerical value of the index of dispersion uniformity, the better the dispersion uniformity is represented, and the results are listed in Table 1 above.
Figure 02_image001

以實施例4之複合陶瓷靶材為例,藉由掃描式電子顯微鏡與元素分析儀於其五處不同位置(A處至E處)獲得五組添加金屬重量佔比的數據,A處至E處的數據依序分別為10.91%、11.15%、11.63%、12.33%以及11.47%,由此可得到實施例4之複合陶瓷靶材的M max為12.33%、M min為10.91%以及M avg為11.49%,接著代入上述算式即可求得實施例4之複合陶瓷靶材中添加金屬的分散均勻度指標約為6.2%;再以比較例2之複合陶瓷靶材為例,以與前述相同的方式可得到五組添加金屬重量佔比的數據由A處至E處依序分別為30.14%、31.21%、35.53%、39.26%以及36.34%,由此可得到比較例2之複合陶瓷靶材的M max為39.26%、M min為30.14%以及M avg為34.49%,接著代入上述算式即可求得比較例2之複合陶瓷靶材中添加金屬的分散均勻度指標約為13.2%。 Taking the composite ceramic target of Example 4 as an example, five sets of data on the weight ratio of added metals were obtained at five different positions (A to E) by a scanning electron microscope and an elemental analyzer, A to E The data are respectively 10.91%, 11.15%, 11.63%, 12.33% and 11.47% in sequence, from which it can be obtained that the M max of the composite ceramic target of Example 4 is 12.33%, the M min is 10.91% and the M avg is 11.49%, and then substituted into the above formula, the dispersion uniformity index of the added metal in the composite ceramic target of Example 4 can be obtained to be about 6.2%; then take the composite ceramic target of Comparative Example 2 as an example, the same as the above. In this way, five groups of data of the weight proportion of the added metal can be obtained from A to E, which are 30.14%, 31.21%, 35.53%, 39.26% and 36.34%, respectively. From this, the composite ceramic target of Comparative Example 2 can be obtained. M max is 39.26%, M min is 30.14% and M avg is 34.49%, and then substituting the above formula into the composite ceramic target of Comparative Example 2, the dispersion uniformity index of the added metal is about 13.2%.

如表1的結果可見,在實施例1至5之複合陶瓷靶材中,由於控制了添加金屬於複合陶瓷靶材中的含量在0.3 wt%至30 wt%的特定範圍中,其所含添加金屬之分散均勻度指標皆小於或等於10%,代表添加金屬皆良好地分散於實施例1至5之複合陶瓷靶材中;反觀在比較例1以及比較例2之複合陶瓷靶材中,由於添加金屬的含量過低或過高而不在本創作所限定的範圍中,致使添加金屬之分散均勻度指標皆大於10%,顯見在比較例1以及比較例2之複合陶瓷靶材中存在添加金屬分散不均勻的問題。As can be seen from the results in Table 1, in the composite ceramic targets of Examples 1 to 5, since the content of the added metal in the composite ceramic target is controlled within a specific range of 0.3 wt % to 30 wt %, the added The indexes of metal dispersion uniformity are all less than or equal to 10%, which means that the added metals are well dispersed in the composite ceramic targets of Examples 1 to 5; on the other hand, in the composite ceramic targets of Comparative Example 1 and Comparative Example 2, due to The content of the added metal is too low or too high and is not within the scope defined by this work, so that the dispersion uniformity index of the added metal is all greater than 10%. The problem of uneven dispersion.

(2)(2) 粒徑大小particle size

實施例1至5以及比較例1至3之複合陶瓷靶材同樣以SEM獲得金相後,再針對金相中之添加金屬進行粒徑大小的量測。實施例1至5以及比較例1至3所測得之添加金屬的最大粒徑列於上表1中;此外,實施例4與比較例2之複合陶瓷靶材的金相則如圖2A與圖2B所示,用以舉例說明兩者間的差異。The composite ceramic targets of Examples 1 to 5 and Comparative Examples 1 to 3 also obtained the metallographic phase by SEM, and then measured the particle size of the added metal in the metallographic phase. The maximum particle sizes of the added metals measured in Examples 1 to 5 and Comparative Examples 1 to 3 are listed in Table 1 above; in addition, the metallographic phases of the composite ceramic targets of Example 4 and Comparative Example 2 are shown in Figures 2A and 2A. Figure 2B is used to illustrate the difference between the two.

由表1的結果可見,在實施例1至5之複合陶瓷靶材中,由於控制了添加金屬的含量在特定範圍中(0.3 wt%至30 wt%),因此所測得之添加金屬的最大粒徑皆小於1 mm,代表添加金屬不會發生團聚且亦表示具有較佳的分散性;反觀比較例1以及比較例2之複合陶瓷靶材的結果,由於未控制添加金屬的含量於特定範圍中,因此添加金屬的最大粒徑皆大於1 mm,即添加金屬有發生團聚以及分散不均勻的現象。From the results in Table 1, it can be seen that in the composite ceramic targets of Examples 1 to 5, since the content of the added metal is controlled within a specific range (0.3 wt% to 30 wt%), the maximum value of the added metal measured is The particle size is less than 1 mm, which means that the added metal will not agglomerate and has better dispersibility. In contrast, the results of the composite ceramic targets of Comparative Example 1 and Comparative Example 2 are not controlled because the content of the added metal is within a specific range. Therefore, the maximum particle size of the added metal is greater than 1 mm, that is, the added metal has the phenomenon of agglomeration and uneven dispersion.

此外,再由圖2A以及圖2B的結果可清楚觀察到,圖2A所呈現的添加金屬(白色部份)明顯具有較小的粒徑,且均勻分散於金相中;而圖2B所呈現的添加金屬的粒徑明顯較大且有團聚、分散不均勻的現象。In addition, it can be clearly observed from the results in FIGS. 2A and 2B that the additive metal (white part) shown in FIG. 2A obviously has a smaller particle size and is uniformly dispersed in the metallographic phase; while the additive metal presented in FIG. 2B The particle size is obviously larger and there is agglomeration and uneven dispersion.

由上述添加金屬之分散均勻度指標以及粒徑大小的實驗結果可知,本創作之複合陶瓷靶材確實具有添加金屬的分散均勻度較佳以及粒徑較小的優點,而有利於提升後續形成之薄膜的品質。From the above-mentioned experimental results of the dispersion uniformity index of the added metal and the particle size, it can be seen that the composite ceramic target of this creation does have the advantages of better dispersion uniformity of the added metal and smaller particle size, which is beneficial to improve the subsequent formation. film quality.

試驗例Test example 22 :複合陶瓷薄膜品質: Composite ceramic film quality

本試驗例係選用實施例2之複合陶瓷靶材進行濺鍍所形成之複合陶瓷薄膜,與分別選擇鈀靶材與二氧化錫靶材以共濺鍍方式所形成之複合陶瓷薄膜進行比較。具體而言,實施例2之複合陶瓷靶材係選用射頻磁控濺鍍的方式,於室溫、壓力為8 mtorr下,以濺鍍功率為300 W、氧氣相對於氬氣分率為五分之一以下之條件形成複合陶瓷薄膜,其薄膜厚度為150奈米(nm);而共濺鍍之條件則為鈀靶材採用濺鍍功率為50 W之直流磁控濺鍍、二氧化錫靶材採用濺鍍功率為270 W之射頻磁控濺鍍,並共同進行濺鍍以形成複合陶瓷薄膜。隨後,以實施例2之複合陶瓷靶材所形成之複合陶瓷薄膜與以共濺鍍所形成之複合陶瓷薄膜皆以SEM拍攝微結構影像圖以評估薄膜的品質,其結果分別如圖3A以及圖3B所示。In this test example, the composite ceramic film formed by sputtering with the composite ceramic target of Example 2 is compared with the composite ceramic film formed by co-sputtering with a palladium target and a tin dioxide target respectively. Specifically, the composite ceramic target material of Example 2 adopts the method of radio frequency magnetron sputtering, at room temperature and under the pressure of 8 mtorr, the sputtering power is 300 W, and the ratio of oxygen to argon is five points. One of the following conditions forms a composite ceramic film with a film thickness of 150 nanometers (nm); and the co-sputtering condition is that the palladium target is DC magnetron sputtering with a sputtering power of 50 W, and a tin dioxide target is used. The material was sputtered by radio frequency magnetron sputtering with a sputtering power of 270 W, and sputtered together to form a composite ceramic film. Subsequently, both the composite ceramic film formed by the composite ceramic target of Example 2 and the composite ceramic film formed by co-sputtering were photographed with SEM to evaluate the quality of the films. The results are shown in Fig. 3A and Fig. 3A respectively. 3B is shown.

同時由圖3A與圖3B的結果可觀察到,圖3B之複合陶瓷薄膜明顯觀察到多處產生裂痕,即存在裂膜的問題;而圖3A之複合陶瓷薄膜則沒有觀察到裂痕產生。據此,由圖3A以及圖3B的比較結果可知,相較於以共濺鍍的方式形成複合陶瓷薄膜,以本創作之複合陶瓷靶材進行濺鍍所形成之複合陶瓷薄膜不會發生裂膜的問題,即所形成之複合陶瓷薄膜確實具有較佳的品質。At the same time, it can be observed from the results of FIGS. 3A and 3B that the composite ceramic film of FIG. 3B has obvious cracks in many places, that is, there is a problem of cracking; while the composite ceramic film of FIG. 3A has no cracks. Accordingly, it can be seen from the comparison results of FIG. 3A and FIG. 3B that, compared with the composite ceramic thin film formed by co-sputtering, the composite ceramic thin film formed by sputtering with the composite ceramic target of the present invention will not crack. The problem is that the formed composite ceramic film does have better quality.

綜上所述,本創作藉由控制複合陶瓷靶材之結晶相相數以及所含第二金屬氧化物與添加金屬的含量於特定範圍中,能使複合陶瓷靶材具有較高的相對密度以及添加金屬在靶材中具有較佳的分散均勻度和較小的粒徑,進而能夠提升後續形成之複合陶瓷薄膜的品質,且同時簡化複合陶瓷薄膜之製程,因而提升其應用於氣體感測器相關領域中的價值。To sum up, by controlling the number of crystal phases of the composite ceramic target and the content of the second metal oxide and the additive metal in a specific range, the present invention can make the composite ceramic target have a higher relative density and The addition of metal in the target has better dispersion uniformity and smaller particle size, which can improve the quality of the composite ceramic film formed subsequently, and simplify the process of the composite ceramic film, thus improving its application in gas sensors. value in related fields.

無。none.

圖1為實施例1至5之複合陶瓷靶材的X射線繞射(X-ray Diffraction,XRD)分析結果以及鈀與二氧化錫之XRD圖譜; 圖2A為實施例4之複合陶瓷靶材的掃描式電子顯微鏡(Scanning Electron Microscope,SEM)影像圖; 圖2B為比較例2之複合陶瓷靶材的SEM影像圖; 圖3A為實施例2之複合陶瓷靶材濺鍍所形成之複合陶瓷薄膜的SEM影像圖; 圖3B為採用共濺鍍所形成之複合陶瓷薄膜的SEM影像圖。 1 is the X-ray diffraction (X-ray Diffraction, XRD) analysis results of the composite ceramic targets of Examples 1 to 5 and the XRD patterns of palladium and tin dioxide; 2A is a scanning electron microscope (Scanning Electron Microscope, SEM) image of the composite ceramic target of Example 4; 2B is a SEM image of the composite ceramic target of Comparative Example 2; 3A is a SEM image of a composite ceramic film formed by sputtering of the composite ceramic target of Example 2; 3B is a SEM image of a composite ceramic thin film formed by co-sputtering.

無。none.

Claims (10)

一種複合陶瓷靶材,其包含一第一金屬氧化物、一第二金屬氧化物及一添加金屬,該複合陶瓷靶材之結晶相相數為兩相,且以該複合陶瓷靶材的總重為基準,該添加金屬的含量係大於或等於0.3重量百分比且小於或等於30重量百分比,該第二金屬氧化物的含量係大於或等於0.5重量百分比且小於或等於2重量百分比;其中,該第一金屬氧化物為二氧化錫,該第二金屬氧化物為一氧化銅,該添加金屬為把。 A composite ceramic target, comprising a first metal oxide, a second metal oxide and an additive metal, the number of crystal phases of the composite ceramic target is two phases, and the total weight of the composite ceramic target is As a benchmark, the content of the added metal is greater than or equal to 0.3 weight percent and less than or equal to 30 weight percent, and the content of the second metal oxide is greater than or equal to 0.5 weight percent and less than or equal to 2 weight percent; One metal oxide is tin dioxide, the second metal oxide is copper monoxide, and the additive metal is handle. 如請求項1所述之複合陶瓷靶材,其中,該複合陶瓷靶材之相對密度係大於或等於60%。 The composite ceramic target according to claim 1, wherein the relative density of the composite ceramic target is greater than or equal to 60%. 如請求項1所述之複合陶瓷靶材,其中,該複合陶瓷靶材之相對密度係大於或等於95%。 The composite ceramic target according to claim 1, wherein the relative density of the composite ceramic target is greater than or equal to 95%. 如請求項1至3中任一項所述之複合陶瓷靶材,其中,該復複合陶瓷靶材中添加金屬的分散均勻度指標係小於或等於10%;其中,該添加金屬的分散均勻度指標係由該複合陶瓷靶材在不同位置所測得之添加金屬重量佔比的多組數據經由以下算式所求得:(所述多組數據中添加金屬重量佔比的最大值-所述多組數據中添加金屬重量佔比的最小值)/2×所述多組數據中添加金屬重量佔比的平均值×100%。 The composite ceramic target according to any one of claims 1 to 3, wherein the index of the dispersion uniformity of the added metal in the composite composite ceramic target is less than or equal to 10%; wherein, the dispersion uniformity of the added metal is The index is obtained from the multiple sets of data of the added metal weight ratio measured at different positions of the composite ceramic target through the following formula: (the maximum value of the added metal weight ratio in the multiple sets of data - the multiple The minimum value of the weight proportion of the added metal in the group data)/2×the average value of the weight proportion of the added metal in the multiple groups of data×100%. 如請求項1至3中任一項所述之複合陶瓷靶材,其中,該添加金屬的最大粒徑係小於或等於1毫米。 The composite ceramic target according to any one of claims 1 to 3, wherein the maximum particle size of the additive metal is less than or equal to 1 mm. 一種複合陶瓷靶材的製法,其包含下步驟:步驟(a):混合一第一金屬氧化物原料、一第二金屬氧化物原料及一添加金屬原料,以得到一混合原料;步驟(b):將該混合原料進行冷均壓,以獲得一坯體;以及 步驟(c):將該坯體置於氧氣氣氛且溫度係大於或等於1200℃且小於或等於1400℃之條件下進行燒結,以得到該複合陶瓷靶材;其中,該複合陶瓷靶材之結晶相相數為兩相,且以該混合原料之總重為基準,該添加金屬原料的添加量係大於或等於0.3重量百分比且小於或等於30重量百分比,該第二金屬氧化物原料的含量係大於或等於0.5重量百分比且小於或等於2重量百分比;其中,該第一金屬氧化物原料為二氧化錫原料,該第二金屬氧化物原料為一氧化銅原料,該添加金屬原料為把原料。 A method for preparing a composite ceramic target, comprising the following steps: step (a): mixing a first metal oxide raw material, a second metal oxide raw material and an additive metal raw material to obtain a mixed raw material; step (b) : cold equalizing the mixed raw material to obtain a green body; and Step (c): the green body is placed in an oxygen atmosphere and the temperature is greater than or equal to 1200°C and less than or equal to 1400°C and sintered to obtain the composite ceramic target; wherein, the crystallization of the composite ceramic target The number of phases is two phases, and based on the total weight of the mixed raw materials, the amount of the added metal raw material is greater than or equal to 0.3 weight percent and less than or equal to 30 weight percent, and the content of the second metal oxide raw material is More than or equal to 0.5 weight percent and less than or equal to 2 weight percent; wherein, the first metal oxide raw material is a tin dioxide raw material, the second metal oxide raw material is a copper monoxide raw material, and the added metal raw material is a raw material. 如請求項6所述之製法,其中,該添加金屬原料的平均粒徑係小於80微米,該第一金屬氧化物原料的平均粒徑係小於1微米,該第二金屬氧化物原料的平均粒徑係小於1微米。 The method according to claim 6, wherein the average particle size of the added metal raw material is less than 80 microns, the average particle size of the first metal oxide raw material is less than 1 micron, and the average particle size of the second metal oxide raw material is less than 1 micron. The diameter is less than 1 micron. 如請求項6所述之製法,其中,該步驟(a)還包含以下步驟:步驟(a1):混合該第一金屬氧化物原料以及該第二金屬氧化物原料,以得到一金屬氧化物混合原料;步驟(a2):將該金屬氧化物混合原料經過一球磨細化步驟使平均粒徑小於1微米,接著再透過一噴霧造粒步驟獲得一細化之金屬氧化物混合原料;以及步驟(a3):將該細化之金屬氧化物混合原料以及該添加金屬原料進行球磨混合,以得到該混合原料。 The production method according to claim 6, wherein the step (a) further comprises the following steps: step (a1): mixing the first metal oxide raw material and the second metal oxide raw material to obtain a mixed metal oxide raw material; step (a2): pass the metal oxide mixed raw material through a ball milling refining step to make the average particle diameter less than 1 micron, and then obtain a refined metal oxide mixed raw material through a spray granulation step; and step ( a3): The refined metal oxide mixed raw material and the added metal raw material are ball-milled and mixed to obtain the mixed raw material. 一種複合陶瓷薄膜,其係由如請求項1至5中任一項所述之複合陶瓷靶材經由濺鍍或蒸鍍所製成。 A composite ceramic thin film is produced by sputtering or evaporation from the composite ceramic target according to any one of claims 1 to 5. 一種複合陶瓷薄膜的製法,其包含以下步驟:以射頻磁控濺鍍方式濺鍍或蒸鍍如請求項1至5中任一項所述之複合陶瓷靶材,以得到該複合陶瓷薄膜。 A method for preparing a composite ceramic thin film, comprising the following steps: sputtering or evaporating the composite ceramic target according to any one of claims 1 to 5 by means of radio frequency magnetron sputtering to obtain the composite ceramic thin film.
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CN101631892A (en) * 2007-03-14 2010-01-20 旭硝子株式会社 Transparent conductive film and method for manufacturing the transparent conductive film, and sputtering target used in the method
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