TWI763750B - Anisotropic conductive film - Google Patents

Anisotropic conductive film

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Publication number
TWI763750B
TWI763750B TW106142172A TW106142172A TWI763750B TW I763750 B TWI763750 B TW I763750B TW 106142172 A TW106142172 A TW 106142172A TW 106142172 A TW106142172 A TW 106142172A TW I763750 B TWI763750 B TW I763750B
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Taiwan
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conductive particles
resin layer
insulating resin
electronic component
conductive film
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TW106142172A
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Chinese (zh)
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TW201838049A (en
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尾怜司
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日商迪睿合股份有限公司
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Priority claimed from JP2017222923A external-priority patent/JP7274815B2/en
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Publication of TW201838049A publication Critical patent/TW201838049A/en
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Publication of TWI763750B publication Critical patent/TWI763750B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

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  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)

Abstract

本發明之連接構造體係利用異向性導電膜將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接而成,該第1電子零件具有第1端子圖案,該第2電子零件具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件具有與第1端子圖案及第2端子圖案之各者對應之端子圖案。異向性導電膜具有下述之區域中至少一者:導電粒子規則地排列之區域、以及導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域。 The connection structure system of the present invention is formed by anisotropically conductively connecting the first electronic component, the second electronic component, and the third electronic component with an anisotropic conductive film, the first electronic component has a first terminal pattern, and the second electronic component has a first terminal pattern. The electronic component has a second terminal pattern having terminals different in size and pitch from the first terminal pattern, and the third electronic component has a terminal pattern corresponding to each of the first terminal pattern and the second terminal pattern. The anisotropic conductive film has at least one of the following regions: a region in which conductive particles are regularly arranged, and a plurality of regions in which at least one of the number density, particle diameter, and hardness of the conductive particles is different.

Description

異向性導電膜 Anisotropic Conductive Film

本發明係關於一種異向性導電膜。 The present invention relates to an anisotropic conductive film.

於液晶顯示元件中,使用異向性導電膜將多種電子零件分別連接於1個基板,例如將IC晶片及可撓性印刷基板(FPC)兩者連接於玻璃基板端部等。於該情形時,使用適於多種電子零件之各者的異向性導電膜。 In a liquid crystal display element, anisotropic conductive films are used to connect various electronic components to one substrate, for example, to connect both an IC chip and a flexible printed circuit board (FPC) to an edge of a glass substrate. In this case, an anisotropic conductive film suitable for each of a variety of electronic components is used.

相對於此,提出有使用1片異向性導電膜將2種電子零件連接於1個基板(專利文獻1)。 On the other hand, it is proposed to connect two types of electronic components to one substrate using one sheet of anisotropic conductive film (Patent Document 1).

先前技術文獻 prior art literature

專利文獻 Patent Literature

專利文獻1:日本專利4650050號公報 Patent Document 1: Japanese Patent No. 4650050

若使用1片異向性導電膜將2種電子零件連接於1個基板,則可減少連接所需之步驟數或空間。 If one sheet of anisotropic conductive film is used to connect two types of electronic components to one substrate, the number of steps or space required for connection can be reduced.

然而,先前用以將2種電子零件連接於1個基板之異向性導電膜係使導電粒子無規地分散至絕緣性樹脂層而成者,因此無法精密地規定異向性導電膜中導電粒子之分散狀態。因此,必須使異向性導電膜中之導電粒子之個數 密度適合於2種電子零件中端子之大小或間距較小者,從而大量存在無用之與連接無關之導電粒子。 However, conventional anisotropic conductive films for connecting two types of electronic components to a single substrate are formed by randomly dispersing conductive particles in an insulating resin layer, so it is impossible to precisely define the electrical conductivity in the anisotropic conductive films. The state of dispersion of particles. Therefore, it is necessary to make the number density of the conductive particles in the anisotropic conductive film suitable for the size or the distance between the terminals of the two types of electronic parts, so that there are a large number of useless conductive particles that are not related to connection.

本發明係針對此種習知技術之問題,其課題在於,於使用1片異向性導電膜將IC晶片或FPC等多種電子零件連接於1個基板等電子零件時,使異向性導電膜更適合於各電子零件,減少與連接無關的無用之導電粒子。 The present invention is aimed at solving the problems of such a conventional technique, and its subject is to make the anisotropic conductive film to connect various electronic components such as IC chips and FPCs to electronic components such as a substrate using one sheet of anisotropic conductive film. It is more suitable for various electronic parts and reduces useless conductive particles that are not related to connection.

本發明者發現,於使用1片異向性導電膜將端子圖案不同之第1電子零件及第2電子零件連接於第3電子零件時,若使異向性導電膜中之導電粒子規則地排列,則可控制導電粒子之間距或排列方向,因此與導電粒子無規地配置之情形相比,可降低為了將第1電子零件及第2電子零件兩者適當地連接於第3電子零件所需之導電粒子之個數密度,另外,容易提昇經異向性導電連接之連接構造體之良率,進而藉由在1片異向性導電膜設置導電粒子之個數密度、粒徑、硬度等不同之多個區域,可對第1電子零件及第2電子零件之各者進行更適合之連接,可進而減少無用之導電粒子,從而想到本發明。 The inventors of the present invention discovered that when the first electronic component and the second electronic component having different terminal patterns are connected to the third electronic component using one sheet of anisotropic conductive film, if the conductive particles in the anisotropic conductive film are regularly arranged , the distance between the conductive particles or the arrangement direction can be controlled, so compared with the case where the conductive particles are randomly arranged, the required amount for properly connecting both the first electronic component and the second electronic component to the third electronic component can be reduced. In addition, it is easy to improve the yield of the connection structure connected by anisotropic conductive connection, and by setting the number density, particle size, hardness, etc. of conductive particles in one anisotropic conductive film A plurality of different regions can be more suitably connected to each of the first electronic component and the second electronic component, and useless conductive particles can be further reduced, leading to the idea of the present invention.

即,第1本發明係一種連接構造體,係利用異向性導電膜將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接而成,該第1電子零件具有第1端子圖案,該第2電子零件具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件具有與第1端子圖案及第2端子圖案分別對應之端子圖案;並且異向性導電膜具有下述之區域中至少一者:導電粒子規則地排列之區域、以及導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域。 That is, the first aspect of the present invention is a connection structure comprising anisotropically conductively connecting a first electronic component, a second electronic component, and a third electronic component using an anisotropic conductive film, the first electronic component having a first electronic component. 1 terminal pattern, the second electronic component has a second terminal pattern with terminals different in size and pitch from the first terminal pattern, the third electronic component has terminal patterns corresponding to the first terminal pattern and the second terminal pattern, respectively; and The anisotropic conductive film has at least one of the following regions: a region in which conductive particles are regularly arranged, and a plurality of regions in which at least one of the number density, particle diameter, and hardness of the conductive particles is different.

第2本發明係一種異向性導電膜,其具有絕緣性樹脂層及配置於該絕緣性樹脂層之導電粒子,並且具有導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域。 The second aspect of the present invention is an anisotropic conductive film having an insulating resin layer and conductive particles arranged in the insulating resin layer, and having a plurality of conductive particles different in at least one of number density, particle diameter and hardness area.

第3本發明係一種異向性導電膜之製造方法,其包括如下步驟: 第1壓入步驟,係使導電粒子附著於絕緣性樹脂層之一表面,並將該導電粒子壓入至絕緣性樹脂層;及第2壓入步驟,係使導電粒子附著於俯視下成為第1壓入步驟中壓入導電粒子之區域中的一部分之區域、或包含第1壓入步驟中壓入導電粒子之整個區域之區域、或與第1壓入步驟中壓入導電粒子之區域局部重疊之區域,並將該導電粒子壓入至絕緣性樹脂層;並且形成至少導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域。 The third aspect of the present invention is a method for producing an anisotropic conductive film, which includes the following steps: a first pressing step of attaching conductive particles to a surface of an insulating resin layer, and pressing the conductive particles into the insulating resin layer The resin layer; and the second press-in step, in which the conductive particles are adhered to a region that is a part of the area in which the conductive particles were pressed in the first press-in step, or a region including the conductive particles in the first press-in step. The entire area or the area partially overlapping with the area where the conductive particles are pressed in the first pressing step, and the conductive particles are pressed into the insulating resin layer; and at least the number density, particle size and A plurality of regions of at least one difference in hardness.

第4本發明係一種連接構造體之製造方法,係利用異向性導電膜將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接,該第1電子零件具有第1端子圖案,該第2電子零件具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件具有與第1端子圖案及第2端子圖案分別對應之端子圖案,並且 作為異向性導電膜,使用具有下述之區域中至少一者的異向性導電膜:導電粒子規則地排列之區域、以及導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域。 The fourth aspect of the present invention is a method for producing a connection structure, wherein a first electronic component, a second electronic component, and a third electronic component are anisotropically conductively connected using an anisotropic conductive film, the first electronic component having a first electronic component. a terminal pattern, the second electronic component has a second terminal pattern with terminals different in size and pitch from the first terminal pattern, the third electronic component has a terminal pattern corresponding to the first terminal pattern and the second terminal pattern, respectively, and serves as a Anisotropic conductive film, using an anisotropic conductive film having at least one of the following regions: a region in which conductive particles are regularly arranged, and a plurality of conductive particles that differ in at least one of the number density, particle size, and hardness area.

本發明之連接構造體係利用1片異向性導電膜來將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接,因此相較於針對與第3電子零件連接之每一電子零件變更異向性導電膜之情形,可簡化製造步驟,而可以低成本進行製造。並且,該連接構造體係藉由使用“具有導電粒子規則地排列、或導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域者”作為異向性導電膜而製造,因此儘管使用1片異向性導電膜進行製造,但該異向性導電膜適合於第1電子零件及第2電子零件各者,且減少無用之導電粒子。 The connection structure system of the present invention uses one sheet of anisotropic conductive film to perform anisotropic conductive connection between the first electronic component, the second electronic component, and the third electronic component. When an electronic component is changed to the anisotropic conductive film, the manufacturing steps can be simplified and the manufacturing can be performed at low cost. Furthermore, the connection structure system is manufactured by using "a plurality of regions having conductive particles regularly arranged, or at least one different in number density, particle diameter and hardness of conductive particles" as anisotropic conductive films, so although Manufactured using one sheet of anisotropic conductive film, this anisotropic conductive film is suitable for each of the first electronic component and the second electronic component, and useless conductive particles are reduced.

另外,本發明之異向性導電膜具有導電粒子規則地排列、或導電 粒子之個數密度、粒徑及硬度之至少一種不同的多個區域,因此可使該等區域成為與第1電子零件及第2電子零件各自之端子圖案對應者。因此,如上所述可減少異向性導電膜中之無用之導電粒子。 In addition, since the anisotropic conductive film of the present invention has a plurality of regions in which conductive particles are regularly arranged or in which at least one of the number density, particle diameter and hardness of conductive particles is different, these regions can be used as the first electronic component. and those corresponding to the respective terminal patterns of the second electronic component. Therefore, useless conductive particles in the anisotropic conductive film can be reduced as described above.

1‧‧‧導電粒子 1‧‧‧Conductive particles

2‧‧‧絕緣性樹脂層 2‧‧‧Insulating resin layer

2b‧‧‧凹陷(傾斜) 2b‧‧‧Depression (inclined)

2c‧‧‧凹陷(起伏) 2c‧‧‧Sag (undulation)

3‧‧‧導電粒子分散層 3‧‧‧Conductive particle dispersion layer

4‧‧‧第2絕緣性樹脂層 4‧‧‧Second insulating resin layer

10A、10B、10C、10D、10E、10F、10G‧‧‧異向性導電膜 10A, 10B, 10C, 10D, 10E, 10F, 10G‧‧‧Anisotropic Conductive Film

10p、10q、10r、10s‧‧‧異向性導電膜之區域 10p, 10q, 10r, 10s‧‧‧ area of anisotropic conductive film

31‧‧‧第1電子零件 31‧‧‧First Electronic Parts

32‧‧‧第2電子零件 32‧‧‧Second electronic component

33‧‧‧第3電子零件 33‧‧‧The third electronic component

40A‧‧‧第1連接構造體 40A‧‧‧First connection structure

40B‧‧‧第2連接構造體 40B‧‧‧Second connection structure

D‧‧‧導電粒子之平均粒徑 D‧‧‧Average particle size of conductive particles

La‧‧‧絕緣性樹脂層之層厚 La‧‧‧Thickness of insulating resin layer

Lb‧‧‧鄰接之導電粒子間之中央部之切平面與導電粒子最深部之距離 The distance between the tangent plane of the central part of the adjacent conductive particles and the deepest part of the conductive particles

Lc‧‧‧傾斜或起伏中之導電粒子之露出(正上方)部分之直徑 Lc‧‧‧The diameter of the exposed (directly above) part of the conductive particles in the slope or undulation

Ld‧‧‧導電粒子之周圍或正上方之絕緣性樹脂層之傾斜或起伏之最大直徑 The maximum diameter of the inclination or undulation of the insulating resin layer around or directly above the Ld‧‧‧conductive particles

Le‧‧‧導電粒子之周圍之絕緣性樹脂層之傾斜之最大深度 The maximum depth of inclination of the insulating resin layer around the conductive particles

Lf‧‧‧導電粒子之正上方之絕緣性樹脂層之起伏之最大深度 The maximum depth of the undulations of the insulating resin layer directly above the Lf‧‧‧conductive particles

圖1係本發明之第1連接構造體40A之示意性俯視圖。 FIG. 1 is a schematic plan view of a first connection structure 40A of the present invention.

圖2係本發明之第1連接構造體40A之示意性俯視圖。 FIG. 2 is a schematic plan view of the first connection structure 40A of the present invention.

圖3係本發明之第1連接構造體40A之示意性俯視圖。 FIG. 3 is a schematic plan view of the first connection structure 40A of the present invention.

圖4A係本發明之第2連接構造體40B之示意性俯視圖。 FIG. 4A is a schematic plan view of the second connection structure 40B of the present invention.

圖4B係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 4B is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖4C係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 4C is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖4D係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 4D is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖4E係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 4E is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖5A係本發明之第2連接構造體40B之示意性俯視圖。 FIG. 5A is a schematic plan view of the second connection structure 40B of the present invention.

圖5B係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 5B is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖5C係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 5C is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖6A係本發明之第2連接構造體40B之示意性俯視圖。 FIG. 6A is a schematic plan view of the second connection structure 40B of the present invention.

圖6B係本發明之第2連接構造體40B所使用之異向性導電膜10B之剖視圖。 6B is a cross-sectional view of the anisotropic conductive film 10B used in the second connection structure 40B of the present invention.

圖7係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 7 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of the connection structure.

圖8係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 8 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of a connection structure.

圖9係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 9 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of the connection structure.

圖10係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 10 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of a connection structure.

圖11係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 11 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of a connection structure.

圖12係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 12 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of a connection structure.

圖13係連接構造體之製造所使用之異向性導電膜10A之剖視圖。 FIG. 13 is a cross-sectional view of an anisotropic conductive film 10A used in the manufacture of a connection structure.

圖14係異向性導電膜10B之剖視圖。 FIG. 14 is a cross-sectional view of the anisotropic conductive film 10B.

圖15A係異向性導電膜10C之剖視圖。 FIG. 15A is a cross-sectional view of the anisotropic conductive film 10C.

圖15B係異向性導電膜10C'之剖視圖。 FIG. 15B is a cross-sectional view of the anisotropic conductive film 10C'.

圖16係異向性導電膜10D之剖視圖。 FIG. 16 is a cross-sectional view of the anisotropic conductive film 10D.

圖17係異向性導電膜10E之剖視圖。 FIG. 17 is a cross-sectional view of the anisotropic conductive film 10E.

圖18係實施例之異向性導電膜10F之剖視圖。 FIG. 18 is a cross-sectional view of the anisotropic conductive film 10F of the embodiment.

圖19係實施例之異向性導電膜10G之剖視圖。 FIG. 19 is a cross-sectional view of the anisotropic conductive film 10G of the embodiment.

圖20係比較對象用異向性導電膜10X之剖視圖。 FIG. 20 is a cross-sectional view of the anisotropic conductive film 10X for comparison.

以下,一面參照圖式,一面對本發明進行詳細說明。此外,各圖中,相同符號表示相同或同等之構成要素。 Hereinafter, the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code|symbol represents the same or equivalent component.

[第1連接構造體] [1st connection structure]

(整體構成) (overall composition)

圖1係本發明之連接構造體之態樣中之第1連接構造體40A之示意性俯視圖。於該連接構造體40A中,利用異向性導電膜10A將第1電子零件31及第2電子零件32與第3電子零件33進行異向性導電連接,該第1電子零件31具有第1端子圖案,該第2電子零件32具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件33具有與第1端子圖案及第2端子圖案分別對應之端子圖案。於本實施例中,作為第1電子零件31,例如連接有IC晶片、IC模組等電子零件,作為第2電子零件32,連接有FPC等電子零件。另外,作為連接該等之第3電子零件33,使用玻璃基板、塑膠基板、剛性基板、陶瓷基板等。此外,於本發明中, 第1電子零件、第2電子零件及第3電子零件之種類並無特別限定。作為第1電子零件及第2電子零件,亦可連接有多個IC晶片、IC模組等。 FIG. 1 is a schematic plan view of a first connection structure 40A in an aspect of the connection structure of the present invention. In this connection structure 40A, the first electronic component 31, the second electronic component 32, and the third electronic component 33 having the first terminal are anisotropically conductively connected by the anisotropic conductive film 10A. The second electronic component 32 has a second terminal pattern having terminals different in size and pitch from the first terminal pattern, and the third electronic component 33 has terminal patterns corresponding to the first terminal pattern and the second terminal pattern, respectively. In this embodiment, as the first electronic component 31 , for example, electronic components such as an IC chip and an IC module are connected, and as the second electronic component 32 , electronic components such as an FPC are connected. Moreover, as the 3rd electronic component 33 which connects these, a glass substrate, a plastic substrate, a rigid substrate, a ceramic substrate, etc. are used. In addition, in this invention, the kind of a 1st electronic component, a 2nd electronic component, and a 3rd electronic component is not specifically limited. A plurality of IC chips, IC modules, etc. may be connected as the first electronic component and the second electronic component.

另外,圖1中,於異向性導電膜10A之短邊方向之一端側將第1電子零件31連接於第3電子零件33,於另一端側將第2電子零件32連接於第3電子零件33,但於利用1片異向性導電膜10A將第1電子零件31及第2電子零件32連接於第3電子零件33時,該等之配置並無特別限定。例如亦可如圖2所示般於異向性導電膜10A之長邊方向上排列第1電子零件31與第2電子零件32。另外,可如圖3所示般將多個第1電子零件31連接於第3電子零件33,亦可將多個第2電子零件32連接於第3電子零件33。 In addition, in FIG. 1, the 1st electronic component 31 is connected to the 3rd electronic component 33 at one end side of the short-side direction of the anisotropic conductive film 10A, and the 2nd electronic component 32 is connected to the 3rd electronic component at the other end side 33. However, when the first electronic component 31 and the second electronic component 32 are connected to the third electronic component 33 by one sheet of the anisotropic conductive film 10A, the arrangement of these is not particularly limited. For example, as shown in FIG. 2 , the first electronic component 31 and the second electronic component 32 may be arranged in the longitudinal direction of the anisotropic conductive film 10A. Moreover, as shown in FIG. 3, the some 1st electronic component 31 may be connected to the 3rd electronic component 33, and the some 2nd electronic component 32 may be connected to the 3rd electronic component 33.

(第1連接構造體中之異向性導電膜) (Anisotropic conductive film in the first connection structure)

於本發明之第1連接構造體40A之製造所使用之異向性導電膜10A中,於絕緣性樹脂層2中規則地排列有導電粒子1。因此,使用該異向性導電膜10A將第1電子零件31與第2電子零件32進行異向性導電連接後之第1連接構造體40A,其亦具有至少於未連接第1電子零件31及第2電子零件32之部分規則地排列有導電粒子之區域。 In the anisotropic conductive film 10A used for the production of the first connection structure 40A of the present invention, the conductive particles 1 are regularly arranged in the insulating resin layer 2 . Therefore, the first connection structure 40A after the anisotropic conductive connection between the first electronic component 31 and the second electronic component 32 using the anisotropic conductive film 10A also has at least a A portion of the second electronic component 32 is a region in which conductive particles are regularly arranged.

‧導電粒子之規則之排列及個數密度 ‧Regular arrangement and number density of conductive particles

關於第1連接構造體40A之製造所使用之異向性導電膜10A,作為導電粒子之規則之排列,可列舉正方格子、六角格子、斜方格子、長方格子等。另外,意圖性地去除形成此種格子排列之一部分導電粒子所獲得者亦包括在格子排列中。關於該導電粒子之去除方式,只要於膜之長邊方向上具有規則性,則無特別限制。另外,作為導電粒子整體之粒子配置,亦可使導電粒子1以特定間隔呈直線狀排列而成之粒子行以特定間隔並列。藉由將導電粒子設為規則之排列,且控制導電粒子之間距或排列方向,容易使為了將第1電子零件及第2電子零件之兩者連接於第3電子零件所需之導電粒子之個數密度最佳化。先前,於將第1 電子零件及第2電子零件兩者連接於第3電子零件之異向性導電膜中,由於導電粒子無規地配置,故而使異向性導電膜中之導電粒子之個數密度、與適於第1電子零件之連接的個數密度及適於第2電子零件之連接之個數密度中的個數密度較高者一致,因此大量使用有無用之導電粒子,但於本發明之第1連接構造體40A中,藉由如上所述般使異向性導電膜中之導電粒子呈現規則之排列,容易實現導電粒子之個數密度之最佳化,因此可減少無用之導電粒子。 Regarding the anisotropic conductive film 10A used for the production of the first connection structure 40A, a square lattice, a hexagonal lattice, a rhombic lattice, a rectangular lattice, etc. are mentioned as a regular arrangement of conductive particles. In addition, those obtained by intentionally removing part of the conductive particles forming such a lattice arrangement are also included in the lattice arrangement. The method of removing the conductive particles is not particularly limited as long as it has regularity in the longitudinal direction of the film. Moreover, as the particle arrangement|positioning of the whole electrically-conductive particle, the particle row|line|column which the electrically-conductive particle 1 is linearly arranged at a predetermined space|interval can also be juxtaposed at a predetermined space|interval. By arranging the conductive particles regularly and controlling the distance between the conductive particles or the arrangement direction, it is easy to make one of the conductive particles required to connect both the first electronic component and the second electronic component to the third electronic component. Number density optimization. Conventionally, in the anisotropic conductive film in which both the first electronic component and the second electronic component are connected to the third electronic component, since the conductive particles are randomly arranged, one of the conductive particles in the anisotropic conductive film is The number density is the same as the number density suitable for the connection of the first electronic component and the number density suitable for the connection of the second electronic component, whichever is higher. In the first connection structure 40A of the present invention, by making the conductive particles in the anisotropic conductive film regularly arranged as described above, the optimization of the number density of the conductive particles can be easily achieved, so that unnecessary waste can be reduced. conductive particles.

例如於將第1電子零件與第3電子零件進行COG連接,將第2電子零件與第3電子零件進行FOG連接之情形時,異向性導電膜10A中之導電粒子之個數密度可設為未達35000個/mm2For example, when the first electronic component and the third electronic component are connected by COG and the second electronic component and the third electronic component are connected by FOG, the number density of the conductive particles in the anisotropic conductive film 10A can be set to less than 35,000 pieces/mm 2 .

‧面積佔有率 ‧Area Occupancy

於規定異向性導電膜10A中之導電粒子之個數密度時,根據下式由導電粒子之個數密度及1個導電粒子之俯視面積之平均所算出之面積佔有率成為用以將異向性導電膜熱壓接至電子零件之按壓治具所需之推力之指標。 When specifying the number density of the conductive particles in the anisotropic conductive film 10A, the area occupancy rate calculated from the average of the number density of the conductive particles and the plan area of one conductive particle according to the following formula is used to convert the anisotropic conductive particles into It is an indicator of the thrust required for the pressing jig of the conductive film to be thermally crimped to the electronic parts.

面積佔有率(%)=[俯視下之導電粒子之個數密度(個/mm2)]×[1個導電粒子之俯視面積之平均(mm2/個)]×100 Area occupancy rate (%)=[number density of conductive particles in plan view (item/mm 2 )]×[average of the plan area of one conductive particle (mm 2 /item)]×100

就將為了將異向性導電膜熱壓接至電子零件而對按壓治具所需之推力抑制為較低之方面而言,面積佔有率較佳為35%以下,更佳為0.3~30%之範圍。 The area occupancy rate is preferably 35% or less, more preferably 0.3 to 30%, in terms of suppressing the thrust required for the pressing jig to be low for thermocompression bonding of the anisotropic conductive film to electronic components range.

‧導電粒子之粒徑 ‧Particle size of conductive particles

關於導電粒子之粒徑,為了能夠應對配線高度之不均,另外,抑制導通電阻之上升,且抑制短路之發生,較佳為1μm以上且30μm以下,更佳為3μm以上且9μm以下。分散於絕緣性樹脂層之前的導電粒子之粒徑可利用一般之粒度分佈測定裝置進行測定。另外,分散於絕緣性樹脂層後之導電粒子之粒徑亦可使 用粒度分佈測定裝置而求出。可為圖像型,亦可為雷射型。作為圖像型測定裝置,可列舉濕式流動式粒徑/形狀分析裝置FPIA-3000(Malvern公司)作為一例。測定導電粒子之平均粒徑D之樣品數(導電粒子數)較佳為1000個以上。異向性導電膜中之導電粒子之平均粒徑D可根據SEM等電子顯微鏡進行觀察而求出。於該情形時,較理想為將測定導電粒子之平均粒徑D之樣品數(導電粒子數)設為200個以上。 The particle size of the conductive particles is preferably 1 μm or more and 30 μm or less, more preferably 3 μm or more and 9 μm or less, in order to cope with the unevenness of wiring height, and to suppress the increase in on-resistance and the occurrence of short circuits. The particle size of the conductive particles before being dispersed in the insulating resin layer can be measured by a general particle size distribution analyzer. In addition, the particle diameter of the conductive particles dispersed in the insulating resin layer can also be determined using a particle size distribution analyzer. It can be image type or laser type. As an image type measuring apparatus, a wet flow type particle size/shape analyzer FPIA-3000 (Malvern Corporation) can be mentioned as an example. The number of samples (the number of conductive particles) for measuring the average particle diameter D of the conductive particles is preferably 1000 or more. The average particle diameter D of the conductive particles in the anisotropic conductive film can be determined by observation with an electron microscope such as SEM. In this case, it is preferable to set the number of samples (the number of conductive particles) for measuring the average particle diameter D of the conductive particles to 200 or more.

此外,於使用在其表面附著有絕緣性微粒子者作為導電粒子之情形時,本發明中之導電粒子之粒徑係指不含表面之絕緣性微粒子之粒徑。 In addition, in the case of using those having insulating fine particles adhered to the surface thereof as conductive particles, the particle size of the conductive particles in the present invention refers to the particle size of the insulating fine particles not including the surface.

‧導電粒子非接觸地存在之個數比率 ‧The ratio of the number of conductive particles that exist in non-contact

於第1連接構造體40A之製造所使用之異向性導電膜10A中,導電粒子1較佳為於膜之俯視下互不接觸地存在。因此,相對於導電粒子整體,導電粒子1彼此相互非接觸地存在之個數比率為95%以上,較佳為98%以上,更佳為99.5%以上。如下所述,若使用轉印模使導電粒子1規則地配置,則可容易地控制導電粒子1彼此相互非接觸地存在之比率,故而較佳。於導電粒子1在俯視下重合之情形時,個別地對各者進行計數。 In the anisotropic conductive film 10A used for the manufacture of the first connection structure 40A, the conductive particles 1 preferably exist without contacting each other in a plan view of the film. Therefore, the number ratio of the conductive particles 1 present in non-contact with each other is 95% or more, preferably 98% or more, and more preferably 99.5% or more with respect to the entire conductive particles. As described below, when the conductive particles 1 are regularly arranged using a transfer mold, the ratio at which the conductive particles 1 are present in a non-contact manner can be easily controlled, which is preferable. When the conductive particles 1 overlapped in plan view, each was individually counted.

‧導電粒子之膜厚方向之位置 ‧Position of conductive particles in film thickness direction

於第1連接構造體40A之製造所使用之異向性導電膜10A中,於導電粒子1互不接觸地存在之情形時,較佳為其膜厚方向之位置對齊。例如如圖7所示,可使導電粒子1之膜厚方向之埋入量Lb一致。藉此,無論於第1電子零件31之端子與第3電子零件33之端子之間,亦或於第2電子零件32之端子與第3電子零件33之端子之間,導電粒子之捕捉性均容易穩定。此外,於異向性導電膜10A中,導電粒子1可自絕緣性樹脂層2露出,亦可完全埋入。 In the anisotropic conductive film 10A used for the manufacture of the first connection structure 40A, when the conductive particles 1 exist without contacting each other, the positions in the film thickness direction are preferably aligned. For example, as shown in FIG. 7 , the embedded amount Lb of the conductive particle 1 in the film thickness direction can be made uniform. Thereby, no matter between the terminal of the first electronic component 31 and the terminal of the third electronic component 33, or between the terminal of the second electronic component 32 and the terminal of the third electronic component 33, the ability to capture the conductive particles is uniform. Easy to stabilize. In addition, in the anisotropic conductive film 10A, the conductive particles 1 may be exposed from the insulating resin layer 2 or may be completely embedded.

此處,埋入量Lb係指埋入有導電粒子1之絕緣性樹脂層2之表面(絕緣性樹脂層2之正、背面中露出導電粒子1之側的表面、或導電粒子1完全埋 入至絕緣性樹脂層2之情形時與導電粒子1之距離較近的表面)且鄰接之導電粒子間之中央部的切平面2p與導電粒子1之最深部之距離。 Here, the embedded amount Lb refers to the surface of the insulating resin layer 2 in which the conductive particles 1 are embedded (the surface of the front and back surfaces of the insulating resin layer 2 where the conductive particles 1 are exposed, or the conductive particles 1 are completely embedded. In the case of the insulating resin layer 2, the distance between the tangent plane 2p of the central portion of the adjacent conductive particles and the surface of the conductive particle 1 that is closer to the distance between the adjacent conductive particles and the deepest part of the conductive particle 1.

‧埋入率 ‧Embedding rate

於將導電粒子1之埋入量Lb相對於平均粒徑D之比率設為埋入率(Lb/D)之情形時,埋入率較佳為30%以上且105%以下。若將埋入率(Lb/D)設為30%以上且未達60%,則導電粒子自保持導電粒子之相對高黏度之樹脂露出之比率變高,因此更容易進行低壓構裝。若設為60%以上,則容易利用絕緣性樹脂層2將導電粒子1維持為特定之粒子分散狀態或特定之排列。另外,藉由設為105%以下,可減少異向性導電連接時以使端子間之導電粒子不必要地流動之方式發揮作用之絕緣性樹脂層之樹脂量。此外,導電粒子1亦可貫通絕緣性樹脂層2,該情形時之埋入率(Lb/D)成為100%。 When the ratio of the embedded amount Lb of the conductive particles 1 to the average particle diameter D is set as the embedded ratio (Lb/D), the embedded ratio is preferably 30% or more and 105% or less. When the burying ratio (Lb/D) is 30% or more and less than 60%, the ratio of the conductive particles exposed from the relatively high-viscosity resin that maintains the conductive particles increases, so that low-pressure packaging becomes easier. When it is 60% or more, the conductive particles 1 can be easily maintained in a specific particle dispersion state or a specific arrangement by the insulating resin layer 2 . Moreover, by setting it as 105% or less, the resin amount of the insulating resin layer which functions so that the conductive particle between terminals may flow unnecessarily at the time of anisotropic conductive connection can be reduced. In addition, the conductive particles 1 may penetrate through the insulating resin layer 2, and the burying ratio (Lb/D) in this case is 100%.

此外,埋入率(Lb/D)之數值係指異向性導電膜中所含之總導電粒子數之80%以上、較佳為90%以上、更佳為96%以上成為該埋入率(Lb/D)之數值。因此,埋入率為30%以上且105%以下係指異向性導電膜中所含之總導電粒子數之80%以上、較佳為90%以上、更佳為96%以上之埋入率為30%以上且105%以下。藉由如此使所有導電粒子之埋入率(Lb/D)一致,由於對導電粒子均勻地施加按壓負重,故而端子之導電粒子之捕捉狀態變得良好,導通穩定性提高。 In addition, the numerical value of the burying ratio (Lb/D) refers to 80% or more, preferably 90% or more, more preferably 96% or more of the total number of conductive particles contained in the anisotropic conductive film. (Lb/D) value. Therefore, the burying rate of 30% or more and 105% or less refers to 80% or more of the total number of conductive particles contained in the anisotropic conductive film, preferably 90% or more, more preferably 96% or more. 30% or more and 105% or less. By making the embedding ratio (Lb/D) of all the conductive particles uniform in this way, since the pressing load is uniformly applied to the conductive particles, the trapping state of the conductive particles in the terminal becomes good, and the conduction stability is improved.

(絕緣性樹脂層) (Insulating resin layer)

‧絕緣性樹脂層之黏度 ‧Viscosity of insulating resin layer

於第1連接構造體40A之製造所使用之異向性導電膜10A中,絕緣性樹脂層2之最低熔融黏度並無特別限制,可根據異向性導電膜之使用對象或異向性導電膜之製造方法等而適當決定。例如只要可形成下述凹陷2b(圖8)、2c(圖9),則根據異向性導電膜之製造方法,亦可設為1000Pa‧s左右。另一方面,作為異 向性導電膜之製造方法,進行使導電粒子以特定之配置保持於絕緣性樹脂層之表面,並將該導電粒子壓入至絕緣性樹脂層之方法時,就絕緣性樹脂層能夠實現膜形成之方面而言,較佳為將絕緣性樹脂層之最低熔融黏度設為1100Pa‧s以上。 In the anisotropic conductive film 10A used for the production of the first connection structure 40A, the minimum melt viscosity of the insulating resin layer 2 is not particularly limited, and may be determined according to the use object of the anisotropic conductive film or the anisotropic conductive film The manufacturing method and the like are appropriately determined. For example, as long as the following recesses 2b ( FIG. 8 ) and 2c ( FIG. 9 ) can be formed, the amount of about 1000 Pa·s can be achieved depending on the method of manufacturing the anisotropic conductive film. On the other hand, as a method for producing an anisotropic conductive film, when conducting a method of holding conductive particles on the surface of the insulating resin layer in a specific arrangement, and pressing the conductive particles into the insulating resin layer, the insulating properties are reduced. Since the resin layer can realize film formation, it is preferable to set the minimum melt viscosity of the insulating resin layer to 1100 Pa·s or more.

另外,如下述異向性導電膜之製造方法所說明,就如圖8所示般於壓入至絕緣性樹脂層2之導電粒子1之露出部分之周圍形成凹陷2b、或如圖9所示般於壓入至絕緣性樹脂層2之導電粒子1之正上方形成凹陷2c之方面而言,較佳為1500Pa‧s以上,更佳為2000Pa‧s以上,進而較佳為3000~15000Pa‧s,進而更佳為3000~10000Pa‧s。作為一例,該最低熔融黏度可使用旋轉式流變儀(TA instruments公司製造),於測定壓力5g下保持固定,使用直徑8mm之測定板而求出,更具體而言,可藉由在溫度範圍30~200℃下,設為升溫速度10℃/分鐘、測定頻率10Hz、相對於上述測定板之荷重變動5g而求出。 In addition, as described in the following method of manufacturing an anisotropic conductive film, as shown in FIG. 8 , depressions 2 b are formed around the exposed portion of the conductive particles 1 pressed into the insulating resin layer 2 , or as shown in FIG. 9 . Generally, in terms of forming the depressions 2c directly above the conductive particles 1 pressed into the insulating resin layer 2, it is preferably 1500Pa·s or more, more preferably 2000Pa·s or more, and more preferably 3000~15000Pa·s , and more preferably 3000~10000Pa·s. As an example, the minimum melt viscosity can be obtained by using a rotational rheometer (manufactured by TA instruments), keeping it constant under a measuring pressure of 5 g, and using a measuring plate with a diameter of 8 mm. At 30 to 200° C., a temperature increase rate of 10° C./min, a measurement frequency of 10 Hz, and a load variation of 5 g with respect to the above-mentioned measurement plate were determined.

藉由將絕緣性樹脂層2之最低熔融黏度設為1500Pa‧s以上之高黏度,可抑制異向性導電膜對物品之壓接時導電粒子之無用之移動,尤其可防止異向性導電連接時應夾持於端子間之導電粒子因樹脂流動而流動。 By setting the minimum melt viscosity of the insulating resin layer 2 to a high viscosity of 1500 Pa·s or more, the useless movement of the conductive particles during the crimping of the anisotropic conductive film to the article can be suppressed, especially the anisotropic conductive connection can be prevented The conductive particles that should be clamped between the terminals flow due to the resin flow.

另外,於藉由對絕緣性樹脂層2壓入導電粒子1而形成異向性導電膜10A之導電粒子分散層3之情形時,關於壓入導電粒子1時之絕緣性樹脂層2,於以導電粒子1自絕緣性樹脂層2露出之方式將導電粒子1壓入至絕緣性樹脂層2時,成為如絕緣性樹脂層2發生塑性變形而於導電粒子1之周圍之絕緣性樹脂層2形成凹陷2b(圖8)般之高黏度黏性體,或者於以導電粒子1未自絕緣性樹脂層2露出而掩埋於絕緣性樹脂層2之方式壓入導電粒子1時,成為如於導電粒子1之正上方的絕緣性樹脂層2之表面形成凹陷2c(圖9)般之高黏度黏性體。因此,絕緣性樹脂層2於60℃下之黏度之下限較佳為3000Pa‧s以上,更佳為4000Pa‧s以上,進而較佳為4500Pa‧s以上,上限較佳為20000Pa‧s以下,更佳為15000Pa‧ s以下,進而較佳為10000Pa‧s以下。該測定係藉由與最低熔融黏度相同之測定方法而進行,可抽取溫度為60℃之值而求出。 In addition, when the conductive particle dispersion layer 3 of the anisotropic conductive film 10A is formed by pressing the conductive particles 1 into the insulating resin layer 2, the insulating resin layer 2 when the conductive particles 1 are pressed into When the conductive particles 1 are pressed into the insulating resin layer 2 so that the conductive particles 1 are exposed from the insulating resin layer 2 , the insulating resin layer 2 is formed around the conductive particles 1 as the insulating resin layer 2 is plastically deformed. A highly viscous body like the depression 2b (FIG. 8), or when the conductive particles 1 are pressed into the insulating resin layer 2 without being exposed from the insulating resin layer 2, the conductive particles 1 become the same as the conductive particles. On the surface of the insulating resin layer 2 directly above 1, a high-viscosity viscous body such as a depression 2c (FIG. 9) is formed. Therefore, the lower limit of the viscosity of the insulating resin layer 2 at 60°C is preferably 3000 Pa·s or more, more preferably 4000 Pa·s or more, and more preferably 4500 Pa·s or more, and the upper limit is preferably 20000 Pa·s or less, more preferably It is preferably 15,000 Pa·s or less, and more preferably 10,000 Pa·s or less. This measurement is performed by the same measurement method as the minimum melt viscosity, and can be obtained by extracting a value at a temperature of 60°C.

對絕緣性樹脂層2壓入導電粒子1時之該絕緣性樹脂層2之具體黏度對應於所形成之凹陷2b、2c之形狀或深度等,下限較佳為3000Pa‧s以上,更佳為4000Pa‧s以上,進而較佳為4500Pa‧s以上,上限較佳為20000Pa‧s以下,更佳為15000Pa‧s以下,進而較佳為10000Pa‧s以下。另外,較佳為於40~80℃、更佳為於50~60℃下獲得此種黏度。 The specific viscosity of the insulating resin layer 2 when the conductive particles 1 are pressed into the insulating resin layer 2 corresponds to the shape or depth of the formed depressions 2b and 2c, and the lower limit is preferably 3000Pa·s or more, more preferably 4000Pa s or more, more preferably 4500 Pa‧s or more, and the upper limit is preferably 20000 Pa‧s or less, more preferably 15000 Pa‧s or less, and still more preferably 10000 Pa‧s or less. Moreover, it is preferable to obtain such a viscosity at 40-80 degreeC, More preferably, it is 50-60 degreeC.

如上所述,藉由在自絕緣性樹脂層2露出之導電粒子1之周圍形成凹陷2b(圖8),相對於異向性導電膜對物品壓接時產生之導電粒子1之扁平化而自絕緣性樹脂所受到之阻力較無凹陷2b之情形時降低。因此,於異向性導電連接時導電粒子變得容易受到端子夾持,藉此導通性能提高,且捕捉性提高。 As described above, by forming the depressions 2b around the conductive particles 1 exposed from the insulating resin layer 2 ( FIG. 8 ), the flattening of the conductive particles 1 generated when the article is crimped with respect to the anisotropic conductive film is self-contained. The resistance received by the insulating resin is lower than that in the case where there is no recess 2b. Therefore, the conductive particles are easily clamped by the terminals during anisotropic conductive connection, whereby the conduction performance is improved, and the trapping property is improved.

另外,藉由在未自絕緣性樹脂層2露出而被掩埋之導電粒子1之正上方的絕緣性樹脂層2之表面形成凹陷2c(圖9),與無凹陷2c之情形相比,異向性導電膜對物品壓接時之壓力變得容易集中於導電粒子1。因此,於異向性導電連接時導電粒子變得容易受到端子夾持,藉此捕捉性提高,導通性能提高。 In addition, by forming depressions 2c on the surface of the insulating resin layer 2 just above the conductive particles 1 buried without being exposed from the insulating resin layer 2 ( FIG. 9 ), compared with the case where there are no depressions 2c, anisotropy The pressure when the conductive film is crimped to the article tends to be concentrated on the conductive particles 1 . Therefore, it becomes easy for the conductive particles to be pinched by the terminals at the time of anisotropic conductive connection, whereby the catchability is improved, and the conduction performance is improved.

<代替凹陷之「傾斜」或「起伏」> <Instead of "slope" or "undulation" for depressions>

如圖8、圖9所示之異向性導電膜之「凹陷」2b、2c亦可基於「傾斜」或「起伏」之觀點進行說明。以下,一面參照圖式(圖13~20)一面進行說明。 The "recesses" 2b and 2c of the anisotropic conductive film shown in Figs. 8 and 9 can also be described from the viewpoint of "slope" or "undulation". Hereinafter, description will be made with reference to the drawings ( FIGS. 13 to 20 ).

異向性導電膜10A係由導電粒子分散層3所構成(圖13)。於導電粒子分散層3中,導電粒子1以於絕緣性樹脂層2之單面露出之狀態規則地分散。於膜之俯視下,導電粒子1互不接觸,於膜厚方向上導電粒子1亦互不重疊地規則地分散,構成導電粒子1之膜厚方向之位置對齊的單層之導電粒子層。 The anisotropic conductive film 10A is composed of the conductive particle-dispersed layer 3 ( FIG. 13 ). In the conductive particle dispersion layer 3 , the conductive particles 1 are regularly dispersed in a state of being exposed on one side of the insulating resin layer 2 . In the top view of the film, the conductive particles 1 do not contact each other, and the conductive particles 1 are regularly dispersed without overlapping each other in the film thickness direction, forming a single-layer conductive particle layer in which the positions of the conductive particles 1 in the film thickness direction are aligned.

於各個導電粒子1周圍之絕緣性樹脂層2之表面2a,相對於鄰接之導電粒子間之中央部之絕緣性樹脂層2的切平面2p形成有傾斜2b。此外,亦可如 下所述,於本發明之異向性導電膜中,於埋入至絕緣性樹脂層2之導電粒子1的正上方之絕緣性樹脂層之表面形成有起伏2c(圖16、圖18)。 The surface 2a of the insulating resin layer 2 around each conductive particle 1 is formed with an inclination 2b with respect to the tangent plane 2p of the insulating resin layer 2 in the central portion between adjacent conductive particles. In addition, as described below, in the anisotropic conductive film of the present invention, undulations 2c may be formed on the surface of the insulating resin layer just above the conductive particles 1 embedded in the insulating resin layer 2 ( FIG. 16 , Figure 18).

於本發明中,所謂「傾斜」係指於導電粒子1之附近,絕緣性樹脂層之表面之平坦性受損,相對於上述切平面2p,樹脂層之一部分發生缺損,樹脂量減少之狀態。換言之,於傾斜中,導電粒子周圍之絕緣性樹脂層之表面相對於切平面發生缺損。另一方面,所謂「起伏」係指藉由在導電粒子之正上方之絕緣性樹脂層之表面具有波動,存在如波動般具有高低差之部分,而使樹脂減少之狀態。換言之,導電粒子正上方之絕緣性樹脂層之樹脂量較導電粒子正上方之絕緣性樹脂層之表面位於切平面時變少。該等可將相當於導電粒子之正上方之部位與導電粒子間之平坦之表面部分(圖16、圖18之2f)進行對比而辨識。此外,亦有起伏之起始點作為傾斜而存在之情形。 In the present invention, the term "inclined" refers to a state in which the flatness of the surface of the insulating resin layer is impaired in the vicinity of the conductive particles 1, and a part of the resin layer is chipped relative to the tangential plane 2p, and the amount of resin decreases. In other words, in the inclination, the surface of the insulating resin layer around the conductive particles is chipped with respect to the tangential plane. On the other hand, "undulation" refers to a state in which the resin is reduced by having undulations on the surface of the insulating resin layer just above the conductive particles, and there are parts having a level difference like the undulations. In other words, the resin amount of the insulating resin layer directly above the conductive particles is smaller than when the surface of the insulating resin layer directly above the conductive particles is located on the tangent plane. These can be identified by comparing the portion corresponding to the directly above the conductive particles with the flat surface portion between the conductive particles ( FIG. 16 , 2f of FIG. 18 ). In addition, there are also cases where the starting point of the undulation exists as a slope.

如上所述,藉由在自絕緣性樹脂層2露出之導電粒子1之周圍形成有傾斜2b(圖13),對於異向性導電連接時導電粒子1夾持於端子間時所產生之導電粒子1之扁平化而自絕緣性樹脂所受到之阻力較無傾斜2b之情形有所降低,因此端子之導電粒子之夾持變得容易,藉此導通性能提高,且捕捉性提高。該傾斜較佳為沿著導電粒子之外形。其原因在於,除了更容易表現出連接之效果以外,亦變得容易辨識導電粒子,藉此容易進行製造異向性導電膜時之檢查等。另外,該傾斜及起伏有因對絕緣性樹脂層進行熱壓等而導致其一部分消失之情形,但本發明包括該情形。於該情形時,導電粒子有於絕緣性樹脂層之表面以1點露出之情形。此外,關於異向性導電膜,在所連接之電子零件多種多樣並且根據該等進行調整之情況下,較理想為設計自由度較高以便滿足各種要件,因此無論使傾斜或起伏減少亦或局部地消失,均可使用。 As described above, by forming the inclination 2b around the conductive particles 1 exposed from the insulating resin layer 2 ( FIG. 13 ), the conductive particles generated when the conductive particles 1 are sandwiched between the terminals during anisotropic conductive connection The resistance received from the insulating resin by the flattening of 1 is reduced compared with the case where there is no inclination 2b, so that it becomes easy to hold the conductive particles of the terminal, thereby improving the conduction performance and improving the catchability. The inclination is preferably along the outer shape of the conductive particles. The reason for this is that, in addition to the effect of being connected more easily, it becomes easy to recognize the conductive particles, thereby facilitating inspection and the like at the time of producing an anisotropic conductive film. In addition, some of the inclinations and undulations may disappear when the insulating resin layer is hot-pressed or the like, but the present invention includes such cases. In this case, the conductive particles may be exposed at one point on the surface of the insulating resin layer. In addition, with regard to the anisotropic conductive film, when there are various electronic components to be connected and adjustments are made according to these, it is desirable to have a high degree of freedom in design so as to satisfy various requirements. The ground disappears and can be used.

另外,藉由在未自絕緣性樹脂層2露出而被掩埋之導電粒子1之正上方的絕緣性樹脂層2之表面形成起伏2c(圖16、圖18),與傾斜之情形同樣地, 於異向性導電連接時來自端子之按壓力容易施加至導電粒子。另外,藉由具有起伏,導電粒子之正上方之樹脂量較樹脂平坦地堆積之情形有所減少,因此容易產生連接時之導電粒子正上方之樹脂之排除,端子與導電粒子容易接觸,因此端子之導電粒子之捕捉性提高,導通可靠性提高。 In addition, by forming the undulations 2c on the surface of the insulating resin layer 2 just above the conductive particles 1 buried without being exposed from the insulating resin layer 2 (FIG. 16, FIG. 18), as in the case of inclination, the During anisotropic conductive connection, the pressing force from the terminal is easily applied to the conductive particles. In addition, due to the undulations, the amount of resin directly above the conductive particles is reduced compared to the case where the resin is flatly stacked, so the resin directly above the conductive particles during connection is easily removed, and the terminals and the conductive particles are easy to contact, so the terminal The trapping property of the conductive particles is improved, and the conduction reliability is improved.

(絕緣性樹脂層之厚度方向上之導電粒子之位置) (Position of conductive particles in the thickness direction of the insulating resin layer)

考慮到「傾斜」或「起伏」之觀點之情形時之絕緣性樹脂層2之厚度方向上之導電粒子1之位置係與上述同樣地,導電粒子1可自絕緣性樹脂層2露出,亦可不露出而埋入至絕緣性樹脂層2內,自鄰接之導電粒子間之中央部之切平面2p起至導電粒子之最深部為止的距離(以下稱為埋入量)Lb與導電粒子之平均粒徑D之比(Lb/D)(埋入率)較佳為30%以上且105%以下。 The position of the conductive particles 1 in the thickness direction of the insulating resin layer 2 in consideration of the situation of "tilting" or "undulation" is the same as the above, and the conductive particles 1 may be exposed from the insulating resin layer 2 or may not be. It is exposed and buried in the insulating resin layer 2, and the distance from the tangent plane 2p of the central portion between the adjacent conductive particles to the deepest portion of the conductive particles (hereinafter referred to as the buried amount) Lb and the average particle size of the conductive particles The ratio of diameter to D (Lb/D) (embedding ratio) is preferably 30% or more and 105% or less.

若將埋入率(Lb/D)設為30%以上且未達60%,則粒子自保持導電粒子之相對高黏度之樹脂露出之比率變高,因此更容易進行低壓構裝。若設為60%以上,則容易利用絕緣性樹脂層2將導電粒子1維持為特定之粒子分散狀態或特定之排列。另外,藉由設為105%以下,可減少異向性導電連接時以端子間之導電粒子不必要地流動之方式發揮作用之絕緣性樹脂層之樹脂量。 When the burying ratio (Lb/D) is 30% or more and less than 60%, the ratio of the particles exposed from the relatively high-viscosity resin that maintains the conductive particles increases, so that low-pressure packaging becomes easier. When it is 60% or more, the conductive particles 1 can be easily maintained in a specific particle dispersion state or a specific arrangement by the insulating resin layer 2 . Moreover, by setting it as 105% or less, the resin amount of the insulating resin layer which functions so that the conductive particle between terminals may flow unnecessarily at the time of anisotropic conductive connection can be reduced.

此外,埋入率(Lb/D)之數值係指異向性導電膜中所含之總導電粒子數之80%以上、較佳為90%以上、更佳為96%以上成為該埋入率(Lb/D)之數值。因此,埋入率為30%以上且105%以下係指異向性導電膜中所含之總導電粒子數之80%以上、較佳為90%以上、更佳為96%以上之埋入率為30%以上且105%以下。藉由如此使全部導電粒子之埋入率(Lb/D)一致,使按壓之負重均勻地施加至導電粒子,因此端子之導電粒子之捕捉狀態變得良好,導通穩定性提高。 In addition, the numerical value of the burying ratio (Lb/D) refers to 80% or more, preferably 90% or more, more preferably 96% or more of the total number of conductive particles contained in the anisotropic conductive film. (Lb/D) value. Therefore, the burying rate of 30% or more and 105% or less refers to 80% or more of the total number of conductive particles contained in the anisotropic conductive film, preferably 90% or more, more preferably 96% or more. 30% or more and 105% or less. By making the embedding ratio (Lb/D) of all the conductive particles uniform in this way, the load of pressing is evenly applied to the conductive particles, so that the trapping state of the conductive particles in the terminal is improved, and the conduction stability is improved.

埋入率(Lb/D)可藉由下述方法求出:自異向性導電膜任意抽出10處以上之面積30mm2以上之區域,利用SEM圖像對該膜剖面之一部分進行 觀察,計測合計50個以上之導電粒子。為了進一步提高精度,亦可計測200個以上之導電粒子而求出。 The burial rate (Lb/D) can be obtained by the following method: 10 or more regions with an area of 30 mm 2 or more are arbitrarily extracted from the anisotropic conductive film, and a part of the cross section of the film is observed with an SEM image and measured. A total of 50 or more conductive particles. In order to further improve the accuracy, it can also be obtained by measuring 200 or more conductive particles.

另外,埋入率(Lb/D)之計測可藉由在面視野圖像中進行焦點調整,一次求出某程度之個數。或者亦可將雷射式判別位移感測器(KEYENCE股份有限公司製造等)用於埋入率(Lb/D)之計測。 In addition, in the measurement of the burial rate (Lb/D), a certain number of objects can be obtained at one time by adjusting the focus in the surface view image. Alternatively, a laser-type discrimination displacement sensor (manufactured by KEYENCE Co., Ltd., etc.) can also be used for the measurement of the embedded rate (Lb/D).

(埋入率30%以上且未達60%之態樣) (Embedding rate of 30% or more and less than 60%)

作為埋入率(Lb/D)30%以上且60%以下之導電粒子1的更具體之埋入態樣,首先可列舉如圖13所示之異向性導電膜10A般,導電粒子1以自絕緣性樹脂層2露出之方式以30%以上且未達60%之埋入率被埋入之態樣。該異向性導電膜10A具有傾斜2b,該傾斜2b係絕緣性樹脂層2之表面中與自該絕緣性樹脂層2露出之導電粒子1相接之部分及其附近相對於鄰接之導電粒子間之中央部之絕緣性樹脂層之表面2a的切平面2p,成為大致沿著導電粒子之外形之稜線者。 As a more specific embedment of the conductive particles 1 having an embedment ratio (Lb/D) of 30% or more and 60% or less, the conductive particles 1 having an anisotropic conductive film 10A shown in FIG. It is a state in which it is embedded at a 30% or more and less than 60% burying rate so as to be exposed from the insulating resin layer 2 . The anisotropic conductive film 10A has an inclination 2b, and the inclination 2b is a portion of the surface of the insulating resin layer 2 that is in contact with the conductive particles 1 exposed from the insulating resin layer 2 and the vicinity thereof with respect to the adjacent conductive particles. The tangent plane 2p of the surface 2a of the insulating resin layer in the center part is substantially along the ridgeline of the outer shape of the conductive particle.

此種傾斜2b或下述之起伏2c於藉由將導電粒子1壓入至絕緣性樹脂層2而製造異向性導電膜10A之情形時,可藉由在40~80℃下以3000~20000Pa‧s、更佳為以4500~15000Pa‧s進行導電粒子1之壓入而形成。 In the case of manufacturing the anisotropic conductive film 10A by pressing the conductive particles 1 into the insulating resin layer 2 and producing the anisotropic conductive film 10A, the inclination 2b or the undulations 2c described below can be obtained by heating at 40 to 80° C. at 3000 to 20000 Pa. ‧s, more preferably formed by pressing the conductive particles 1 at 4500-15000 Pa‧s.

(埋入率60%以上且未達100%之態樣) (Embedding rate of more than 60% and less than 100%)

作為埋入率(Lb/D)60%以上且105%以下之導電粒子1的更具體之埋入態樣,首先可列舉如圖13所示之異向性導電膜10A般導電粒子1以自絕緣性樹脂層2露出之方式以60%以上且未達100%之埋入率被埋入之態樣。該異向性導電膜10A具有傾斜2b,該傾斜2b係絕緣性樹脂層2之表面中與自該絕緣性樹脂層2露出之導電粒子1相接之部分及其附近相對於鄰接之導電粒子間之中央部之絕緣性樹脂層之表面2a的切平面2p,成為大致沿著導電粒子之外形之稜線者。 As a more specific embedment of the conductive particles 1 having an embedment ratio (Lb/D) of 60% or more and 105% or less, the conductive particles 1 such as the anisotropic conductive film 10A shown in FIG. 13 can be listed first. The state where the insulating resin layer 2 is exposed is buried at a burying rate of 60% or more and less than 100%. The anisotropic conductive film 10A has an inclination 2b, and the inclination 2b is a portion of the surface of the insulating resin layer 2 that is in contact with the conductive particles 1 exposed from the insulating resin layer 2 and the vicinity thereof with respect to the adjacent conductive particles. The tangent plane 2p of the surface 2a of the insulating resin layer in the center part is substantially along the ridgeline of the outer shape of the conductive particle.

此種傾斜2b或下述之起伏2c於藉由將導電粒子1壓入至絕緣性樹脂層2而製造異向性導電膜10A之情形時,壓入導電粒子1時之黏度之下限較佳為 3000Pa‧s以上,更佳為4000Pa‧s以上,進而較佳為4500Pa‧s以上,上限較佳為20000Pa‧s以下,更佳為15000Pa‧s以下,進而較佳為10000Pa‧s以下。另外,較佳為於40~80℃、更佳為於50~60℃下獲得此種黏度。此外,可為傾斜2b或起伏2c之一部分因對絕緣性樹脂層進行熱壓等而消失,亦可為傾斜2b變化為起伏2c,另外,亦可埋入至具有起伏2c之絕緣性樹脂層之導電粒子以其頂部之1點露出於絕緣性樹脂層2。 In the case where the anisotropic conductive film 10A is produced by pressing the conductive particles 1 into the insulating resin layer 2, the lower limit of the viscosity at the time of pressing the conductive particles 1 is preferably 3000Pa·s or more, more preferably 4000Pa·s or more, further preferably 4500Pa·s or more, and the upper limit is preferably 20000Pa·s or less, more preferably 15000Pa·s or less, and more preferably 10000Pa·s or less. Moreover, it is preferable to obtain such a viscosity at 40-80 degreeC, More preferably, it is 50-60 degreeC. In addition, a part of the inclination 2b or the undulations 2c may disappear due to hot pressing of the insulating resin layer, etc., the inclination 2b may be changed to the undulations 2c, or it may be embedded in the insulating resin layer having the undulations 2c. The conductive particles are exposed to the insulating resin layer 2 at one point at the top thereof.

(埋入率100%之態樣) (Embedding rate of 100%)

其次,作為本發明之異向性導電膜中之埋入率(Lb/D)100%之態樣,可列舉:如圖14所示之異向性導電膜10B般,於導電粒子1之周圍具有“成為大致沿著與圖13所示之異向性導電膜10A相同之導電粒子之外形之稜線的傾斜2b”,自絕緣性樹脂層2露出之導電粒子1之露出直徑Lc小於導電粒子之平均粒徑D者;如圖15A所示之異向性導電膜10C般,導電粒子1之露出部分之周圍之傾斜2b陡峭地出現於導電粒子1附近,導電粒子1之露出直徑Lc與導電粒子之平均粒徑D大致相等者;如圖16所示之異向性導電膜10D般,於絕緣性樹脂層2之表面具有較淺之起伏2c,導電粒子1以其頂部1a之1點自絕緣性樹脂層2露出者。 Next, as an aspect of the burying ratio (Lb/D) of 100% in the anisotropic conductive film of the present invention, as an anisotropic conductive film 10B shown in FIG. It has a "slope 2b that is substantially along the ridgeline of the outer shape of the conductive particles that is substantially the same as that of the anisotropic conductive film 10A shown in FIG. 13", and the exposed diameter Lc of the conductive particles 1 exposed from the insulating resin layer 2 is smaller than that of the conductive particles. For the average particle size D; like the anisotropic conductive film 10C shown in FIG. 15A, the inclination 2b around the exposed portion of the conductive particle 1 appears steeply near the conductive particle 1, and the exposed diameter Lc of the conductive particle 1 and the conductive particle The average particle size D is approximately the same; like the anisotropic conductive film 10D shown in FIG. 16, the surface of the insulating resin layer 2 has shallow undulations 2c, and the conductive particles 1 are self-insulated at one point on the top 1a The resin layer 2 is exposed.

此外,亦可鄰接於導電粒子之露出部分周圍之絕緣性樹脂層2之傾斜2b、或導電粒子之正上方之絕緣性樹脂層之起伏2c而形成微小之突出部分2q。將該一例示於圖15B。 In addition, the micro protruding portion 2q may be formed adjacent to the slope 2b of the insulating resin layer 2 around the exposed portion of the conductive particle, or the undulation 2c of the insulating resin layer just above the conductive particle. This example is shown in FIG. 15B .

該等異向性導電膜10B、10C、10C'、10D由於埋入率為100%,故而導電粒子1之頂部1a與絕緣性樹脂層2之表面2a對齊為同一面。若導電粒子1之頂部1a與絕緣性樹脂層2之表面2a對齊為同一面,則具有如下效果:與如圖13所示般導電粒子1自絕緣性樹脂層2突出之情形相比,於異向性導電連接時,於各個導電粒子之周邊,膜厚方向之樹脂量不易變得不均勻,可減少因樹脂流動所引起之導電粒子之移動。此外,即便埋入率嚴格上並非100%,若埋入至絕緣 性樹脂層2之導電粒子1之頂部與絕緣性樹脂層2之表面對齊至成為同一面之程度,則亦可獲得該效果。換言之,於埋入率(Lb/D)大致為80~105%、尤其90~100%之情形時,可認為埋入至絕緣性樹脂層2之導電粒子1之頂部與絕緣性樹脂層2之表面為同一面,可減少因樹脂流動所引起之導電粒子之移動。 Since these anisotropic conductive films 10B, 10C, 10C' and 10D have a burying rate of 100%, the tops 1a of the conductive particles 1 and the surface 2a of the insulating resin layer 2 are aligned on the same plane. When the tops 1a of the conductive particles 1 and the surface 2a of the insulating resin layer 2 are aligned on the same plane, there is an effect of being different from the case where the conductive particles 1 protrude from the insulating resin layer 2 as shown in FIG. 13 . In the case of directional conductive connection, the amount of resin in the film thickness direction is less likely to become uneven around the periphery of each conductive particle, which can reduce the movement of conductive particles caused by resin flow. In addition, even if the embedding rate is not strictly 100%, this effect can be obtained if the tops of the conductive particles 1 embedded in the insulating resin layer 2 and the surface of the insulating resin layer 2 are aligned to the same level. In other words, when the embedding ratio (Lb/D) is approximately 80-105%, especially 90-100%, it can be considered that the top of the conductive particles 1 embedded in the insulating resin layer 2 and the space between the insulating resin layer 2 The surfaces are the same, which can reduce the movement of conductive particles caused by resin flow.

於該等異向性導電膜10B、10C、10C'、10D中,10D由於導電粒子1之周圍之樹脂量不易變得不均勻,故而可消除因樹脂流動所引起之導電粒子之移動,另外,雖然為頂部1a之1點,但導電粒子1自絕緣性樹脂層2露出,因此可期待如下效果:端子之導電粒子1之捕捉性亦良好,亦不易產生導電粒子之略微之移動。因此,該態樣尤其於微間距或凸塊間之間隙狹小之情形時有效。 Among these anisotropic conductive films 10B, 10C, 10C', and 10D, since the amount of resin around the conductive particles 1 is less likely to become uneven, 10D can eliminate the movement of the conductive particles caused by the flow of the resin. Although it is one point of the top part 1a, the conductive particles 1 are exposed from the insulating resin layer 2, so that the following effects can be expected in that the conductive particles 1 of the terminals have good trapping properties and slight movement of the conductive particles is unlikely to occur. Therefore, this aspect is particularly effective in the case of fine pitches or small gaps between bumps.

此外,傾斜2b、起伏2c之形狀或深度不同之異向性導電膜10B(圖14)、10C(圖15A)、10C'(圖15B)、10D(圖16)可藉由如下所述變更壓入導電粒子1時之絕緣性樹脂層2之黏度等而製造。 In addition, the anisotropic conductive films 10B ( FIG. 14 ), 10C ( FIG. 15A ), 10C′ ( FIG. 15B ), and 10D ( FIG. 16 ) having different shapes or depths of the inclination 2b and the undulation 2c can be changed by changing the pressure as described below. It is manufactured according to the viscosity of the insulating resin layer 2 when the conductive particles 1 are introduced.

(埋入率超過100%之態樣) (In the state where the burial rate exceeds 100%)

於本發明之異向性導電膜中,於埋入率超過100%之情形時,可列舉:如圖17所示之異向性導電膜10E般導電粒子1露出,於該露出部分之周圍之絕緣性樹脂層2具有相對於切平面2p之傾斜2b,或者於導電粒子1之正上方之絕緣性樹脂層2之表面具有相對於切平面2p之起伏2c者(圖18)。 In the anisotropic conductive film of the present invention, when the burying rate exceeds 100%, the conductive particles 1 like the anisotropic conductive film 10E shown in FIG. The insulating resin layer 2 has an inclination 2b with respect to the tangent plane 2p, or the surface of the insulating resin layer 2 directly above the conductive particle 1 has a undulation 2c with respect to the tangent plane 2p (FIG. 18).

此外,於導電粒子1之露出部分之周圍之絕緣性樹脂層2具有傾斜2b的異向性導電膜10E(圖17)與於導電粒子1之正上方之絕緣性樹脂層2具有起伏2c的異向性導電膜10F(圖18)可藉由變更製造其等時壓入導電粒子1時之絕緣性樹脂層2之黏度等而製造。 In addition, the insulating resin layer 2 around the exposed portion of the conductive particle 1 has an anisotropic conductive film 10E (FIG. 17) having a slope 2b, and the insulating resin layer 2 directly above the conductive particle 1 has a different undulation 2c. The oriented conductive film 10F ( FIG. 18 ) can be produced by changing the viscosity or the like of the insulating resin layer 2 when the conductive particles 1 are pressed into the isotropic film.

此外,若將圖17所示之異向性導電膜10E用於異向性導電連接,由於導電粒子1被端子直接按壓,故而端子之導電粒子之捕捉性提高。另外,若將圖18所示之異向性導電膜10F用於異向性導電連接,則導電粒子1不直接按壓 端子,而是隔著絕緣性樹脂層2進行按壓,但存在於按壓方向上之樹脂量與圖20之狀態(即,導電粒子1以超過100%之埋入率被埋入,導電粒子1未自絕緣性樹脂層2露出,且絕緣性樹脂層2之表面為平坦之狀態)相比變少,因此按壓力容易施加至導電粒子,且可防止異向性導電連接時端子間之導電粒子1因樹脂流動而不必要地移動。 Furthermore, when the anisotropic conductive film 10E shown in FIG. 17 is used for anisotropic conductive connection, since the conductive particles 1 are directly pressed by the terminals, the ability to capture the conductive particles in the terminals is improved. In addition, when the anisotropic conductive film 10F shown in FIG. 18 is used for anisotropic conductive connection, the conductive particles 1 do not directly press the terminal, but press through the insulating resin layer 2, but exist in the pressing direction 20 (that is, the conductive particles 1 are embedded at a rate of over 100%, the conductive particles 1 are not exposed from the insulating resin layer 2, and the surface of the insulating resin layer 2 is flat ), the pressing force is easily applied to the conductive particles, and the conductive particles 1 between the terminals can be prevented from moving unnecessarily due to resin flow during anisotropic conductive connection.

就容易發揮上述導電粒子之露出部分之周圍之絕緣性樹脂層2之傾斜2b(圖13、圖14、圖15A、圖15B、圖17)、或導電粒子之正上方之絕緣性樹脂層之起伏2c(圖16、圖18)之效果之方面而言,傾斜2b之最大深度Le與導電粒子1之平均粒徑D之比(Le/D)較佳為未達50%,更佳為未達30%,進而較佳為20~25%,傾斜2b或起伏2c之最大直徑Ld與導電粒子1之平均粒徑D之比(Ld/D)較佳為100%以上,更佳為100~150%,起伏2c之最大深度Lf與導電粒子1之粒徑D之比(Lf/D)大於0,較佳為未達10%,更佳為5%以下。 The inclination 2b of the insulating resin layer 2 around the exposed portion of the conductive particles (FIG. 13, FIG. 14, FIG. 15A, FIG. 15B, and FIG. 17) or the undulation of the insulating resin layer just above the conductive particles can be easily exerted. In terms of the effect of 2c (FIG. 16, FIG. 18), the ratio (Le/D) of the maximum depth Le of the inclination 2b to the average particle diameter D of the conductive particles 1 is preferably less than 50%, more preferably less than 50%. 30%, more preferably 20~25%, the ratio (Ld/D) of the maximum diameter Ld of the inclination 2b or the undulation 2c to the average particle diameter D of the conductive particle 1 is preferably more than 100%, more preferably 100~150 %, the ratio (Lf/D) of the maximum depth Lf of the undulations 2c to the particle size D of the conductive particles 1 is greater than 0, preferably less than 10%, more preferably less than 5%.

此外,傾斜2b或起伏2c中之導電粒子1之露出(正上方)部分之直徑Lc可設為導電粒子1之平均粒徑D以下,較佳為平均粒徑D之10~90%。可以導電粒子1之頂部之1點露出,亦可將導電粒子1完全掩埋於絕緣性樹脂層2內,使直徑Lc成為零。 In addition, the diameter Lc of the exposed (directly above) portion of the conductive particle 1 in the slope 2b or the undulation 2c can be set to be equal to or less than the average particle diameter D of the conductive particle 1, preferably 10-90% of the average particle diameter D. One point of the top of the conductive particles 1 may be exposed, or the conductive particles 1 may be completely buried in the insulating resin layer 2 so that the diameter Lc becomes zero.

此外,如圖19所示,於埋入率(Lb/D)未達60%之異向性導電膜10G中,於絕緣性樹脂層2上導電粒子1容易轉動,因此就提高異向性導電連接時之捕捉率之方面而言,較佳為將埋入率(Lb/D)設為60%以上。 In addition, as shown in FIG. 19 , in the anisotropic conductive film 10G having a burying ratio (Lb/D) of less than 60%, the conductive particles 1 are easily rotated on the insulating resin layer 2, so that the anisotropic conductivity is improved. In terms of the capture rate at the time of connection, it is preferable to set the burying rate (Lb/D) to 60% or more.

另外,於埋入率(Lb/D)超過100%之態樣中,於如圖20所示之比較例的異向性導電膜10X般絕緣性樹脂層2之表面平坦之情形時,介置於導電粒子1與端子之間之樹脂量變得過多。另外,由於導電粒子1不直接接觸端子地按壓端子,而是隔著絕緣性樹脂按壓端子,故而由此導電粒子亦容易因樹脂流動而流動。 In addition, in the state where the burying ratio (Lb/D) exceeds 100%, when the surface of the insulating resin layer 2 is flat like the anisotropic conductive film 10X of the comparative example shown in FIG. The amount of resin between the conductive particle 1 and the terminal becomes excessive. In addition, since the conductive particles 1 do not directly contact the terminals and press the terminals, but press the terminals through the insulating resin, the conductive particles also tend to flow due to the resin flow.

於本發明中,絕緣性樹脂層2之表面存在傾斜2b、起伏2c之情況可藉由利用掃描式電子顯微鏡對異向性導電膜之剖面進行觀察而確認,亦可於面視野觀察中進行確認。亦可利用光學顯微鏡、金屬顯微鏡對傾斜2b、起伏2c進行觀察。另外,傾斜2b、起伏2c之大小亦可藉由圖像觀察時之焦點調整等進行確認。即便如上所述因熱壓而使傾斜或起伏減少後亦相同。其原因在於有時會殘留痕跡。 In the present invention, the existence of the inclination 2b and the undulation 2c on the surface of the insulating resin layer 2 can be confirmed by observing the cross section of the anisotropic conductive film with a scanning electron microscope, and can also be confirmed by observing the surface field of view. . The inclination 2b and the undulation 2c can also be observed with an optical microscope or a metal microscope. In addition, the magnitude of the inclination 2b and the waviness 2c can also be confirmed by adjusting the focus during image observation or the like. The same is true even after the inclination and undulation are reduced by the hot pressing as described above. The reason for this is that sometimes traces remain.

(絕緣性樹脂層之組成) (Composition of insulating resin layer)

絕緣性樹脂層2可由硬化性樹脂組成物形成,例如可由含有熱聚合性化合物及熱聚合起始劑之熱聚合性組成物形成。熱聚合性組成物中亦可視需要含有光聚合起始劑。 The insulating resin layer 2 may be formed of a curable resin composition, for example, a thermopolymerizable composition containing a thermopolymerizable compound and a thermopolymerization initiator. The thermally polymerizable composition may also contain a photopolymerization initiator if necessary.

於將熱聚合起始劑與光聚合起始劑併用之情形時,可使用作為熱聚合性化合物發揮功能且亦作為光聚合性化合物發揮功能者,亦可除含有熱聚合性化合物以外,亦含有光聚合性化合物。較佳為除含有熱聚合性化合物以外,亦含有光聚合性化合物。例如使用熱陽離子系聚合起始劑作為熱聚合起始劑,使用環氧化合物作為熱聚合性化合物,使用光自由基聚合起始劑作為光聚合起始劑,使用丙烯酸酯化合物作為光聚合性化合物。 When a thermal polymerization initiator and a photopolymerization initiator are used in combination, those that function as a thermally polymerizable compound and also function as a photopolymerizable compound may be used, and in addition to the thermally polymerizable compound, the Photopolymerizable compounds. It is preferable to contain a photopolymerizable compound in addition to a thermopolymerizable compound. For example, a thermal cationic polymerization initiator is used as the thermal polymerization initiator, an epoxy compound is used as the thermal polymerizable compound, a photoradical polymerization initiator is used as the photopolymerization initiator, and an acrylate compound is used as the photopolymerizable compound .

作為光聚合起始劑,亦可含有對波長不同之光發生反應之多種。藉此,可將製造異向性導電膜時之構成絕緣性樹脂層之樹脂之光硬化與於異向性導電連接時用以接著電子零件彼此之樹脂之光硬化中所使用之波長分開使用。 As a photopolymerization initiator, a plurality of types that react with light having different wavelengths may be contained. Thereby, the wavelength used for photohardening of the resin constituting the insulating resin layer during the production of the anisotropic conductive film and the photohardening of the resin for bonding electronic parts to each other during the anisotropic conductive connection can be used separately.

於製造異向性導電膜時之光硬化中,可使絕緣性樹脂層中所含之光聚合性化合物之全部或一部分光硬化。藉由該光硬化,可保持絕緣性樹脂層2中之導電粒子1之配置或使之固定化,可期待短路之抑制與捕捉性之提高。另外,亦可藉由該光硬化而適當調整異向性導電膜之製造步驟中之絕緣性樹脂層 之黏度。尤其是,該光硬化較佳為於絕緣性樹脂層2之層厚La與導電粒子1之平均粒徑D之比(La/D)未達0.6之情形時進行。其原因在於,於絕緣性樹脂層2之層厚相對於導電粒子之平均粒徑而較薄之情形時,亦於絕緣性樹脂層2中更確實地進行導電粒子之配置之保持或固定化,並且進行絕緣性樹脂層2之黏度調整,於使用異向性導電膜之電子零件彼此之連接中抑制良率之降低。 In the photocuring at the time of manufacturing an anisotropic conductive film, all or a part of the photopolymerizable compound contained in the insulating resin layer can be photocured. By this photocuring, the arrangement of the conductive particles 1 in the insulating resin layer 2 can be maintained or immobilized, and the suppression of short circuits and the improvement of trapping properties can be expected. In addition, the viscosity of the insulating resin layer in the manufacturing process of the anisotropic conductive film can be appropriately adjusted by the photocuring. In particular, the photohardening is preferably performed when the ratio (La/D) of the layer thickness La of the insulating resin layer 2 to the average particle diameter D of the conductive particles 1 is less than 0.6. The reason for this is that when the layer thickness of the insulating resin layer 2 is relatively thin with respect to the average particle diameter of the conductive particles, the arrangement of the conductive particles is more reliably maintained or fixed in the insulating resin layer 2, and The viscosity of the insulating resin layer 2 is adjusted to suppress the decrease in yield in the connection of electronic components using the anisotropic conductive film.

絕緣性樹脂層中之光聚合性化合物之摻合量較佳為30質量%以下,更佳為10質量%以下,進而較佳為未達2質量%。其原因在於,若光聚合性化合物過多,則連接時之壓入所施加之推力增加。 The blending amount of the photopolymerizable compound in the insulating resin layer is preferably 30% by mass or less, more preferably 10% by mass or less, and still more preferably less than 2% by mass. The reason for this is that when there are too many photopolymerizable compounds, the thrust applied by pressing at the time of connection increases.

作為熱聚合性組成物之例,可列舉:含有(甲基)丙烯酸酯化合物及熱自由基聚合起始劑之熱自由基聚合性丙烯酸酯系組成物、含有環氧化合物及熱陽離子聚合起始劑之熱陽離子聚合性環氧系組成物等。亦可使用含有熱陰離子聚合起始劑之熱陰離子聚合性環氧系組成物代替含有熱陽離子聚合起始劑之熱陽離子聚合性環氧系組成物。另外,只要無特別阻礙,則亦可將多種聚合性化合物併用。作為併用例,可列舉陽離子聚合性化合物與自由基聚合性化合物之併用等。 Examples of the thermally polymerizable composition include: a thermally polymerizable acrylate-based composition containing a (meth)acrylate compound and a thermal radical polymerization initiator, a thermally polymerizable acrylate-based composition containing an epoxy compound and a thermal cationic polymerization initiator Thermal cationic polymerizable epoxy-based composition of the agent, etc. In place of the thermally cationically polymerizable epoxy-based composition containing a thermally cationic polymerization initiator, a thermally anionic polymerizable epoxy-based composition containing a thermally anionic polymerization initiator may also be used. Moreover, as long as there is no particular hindrance, a plurality of polymerizable compounds may be used in combination. As an example of combined use, the combined use of a cationically polymerizable compound and a radically polymerizable compound, etc. are mentioned.

此處,作為(甲基)丙烯酸酯化合物,可使用先前公知之熱聚合型(甲基)丙烯酸酯單體。例如可使用單官能(甲基)丙烯酸酯系單體、二官能以上之多官能(甲基)丙烯酸酯系單體。 Here, as the (meth)acrylate compound, a conventionally known thermally polymerizable (meth)acrylate monomer can be used. For example, a monofunctional (meth)acrylate-based monomer and a polyfunctional (meth)acrylate-based monomer having a difunctional or higher level can be used.

作為熱自由基聚合起始劑,例如可列舉有機過氧化物、偶氮系化合物等。尤其可較佳地使用不會產生成為氣泡之原因之氮氣的有機過氧化物。 As a thermal radical polymerization initiator, an organic peroxide, an azo type compound, etc. are mentioned, for example. In particular, organic peroxides which do not generate nitrogen gas which causes bubbles can be preferably used.

關於熱自由基聚合起始劑之使用量,若過少則變得硬化不良,若過多則導致製品壽命降低,因此相對於(甲基)丙烯酸酯化合物100質量份,較佳為2~60質量份、更佳為5~40質量份。 The usage-amount of the thermal radical polymerization initiator is preferably 2 to 60 parts by mass with respect to 100 parts by mass of the (meth)acrylate compound, since too little will lead to poor curing, and if too much, the life of the product will be shortened. , more preferably 5 to 40 parts by mass.

作為環氧化合物,可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹 脂、酚醛清漆型環氧樹脂、其等之改質環氧樹脂、脂環式環氧樹脂等,可將該等之2種以上併用。另外,亦可除環氧化合物以外併用氧環丁烷化合物。 Examples of the epoxy compound include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, modified epoxy resins thereof, alicyclic epoxy resins, and the like. Two or more of these are used in combination. Moreover, you may use together an oxetane compound other than an epoxy compound.

作為熱陽離子聚合起始劑,可採用公知者作為環氧化合物之熱陽離子聚合起始劑,例如可使用藉由熱而產生酸之錪鹽、鋶鹽、鏻鹽、二茂鐵類等,尤其可較佳地使用對於溫度顯示出良好之潛伏性之芳香族鋶鹽。 As the thermal cationic polymerization initiator, known thermal cationic polymerization initiators for epoxy compounds can be used, for example, iodonium salts, periconium salts, phosphonium salts, ferrocenes, etc., which generate acids by heat, can be used, especially Aromatic permanium salts showing good latency to temperature can be preferably used.

關於熱陽離子聚合起始劑之使用量,若過少則有變得硬化不良之傾向,若過多則有製品壽命降低之傾向,因此相對於環氧化合物100質量份,較佳為2~60質量份,更佳為5~40質量份。 Regarding the usage amount of the thermal cationic polymerization initiator, if it is too small, the curing tends to be poor, and if it is too large, the product life tends to be shortened. Therefore, it is preferably 2 to 60 parts by mass relative to 100 parts by mass of the epoxy compound. , more preferably 5 to 40 parts by mass.

熱聚合性組成物較佳為含有膜形成樹脂或矽烷偶合劑。作為膜形成樹脂,可列舉:苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等,可將該等之2種以上併用。於該等中,就製膜性、加工性、連接可靠性之觀點而言,可較佳地使用苯氧基樹脂。重量平均分子量較佳為10000以上。另外,作為矽烷偶合劑,可列舉環氧系矽烷偶合劑、丙烯酸系矽烷偶合劑等。該等矽烷偶合劑主要為烷氧基矽烷衍生物。 The thermally polymerizable composition preferably contains a film-forming resin or a silane coupling agent. Examples of film-forming resins include phenoxy resins, epoxy resins, unsaturated polyester resins, saturated polyester resins, urethane resins, butadiene resins, polyimide resins, polyamide resins, and polyolefins. Resins and the like can be used in combination of two or more of these. Among these, a phenoxy resin can be preferably used from the viewpoints of film formability, workability, and connection reliability. The weight average molecular weight is preferably 10,000 or more. Moreover, as a silane coupling agent, an epoxy-type silane coupling agent, an acryl-type silane coupling agent, etc. are mentioned. These silane coupling agents are mainly alkoxysilane derivatives.

於熱聚合性組成物中,為了調整熔融黏度,除含有上述導電粒子1以外,亦可含有絕緣性導電粒子。其可列舉二氧化矽粉或氧化鋁粉等。較佳為絕緣性導電粒子粒徑20~1000nm之微小之導電粒子,另外,摻合量較佳為相對於環氧化合物等熱聚合性化合物(光聚合性化合物)100質量份設為5~50質量份。 The thermopolymerizable composition may contain insulating conductive particles in addition to the conductive particles 1 described above in order to adjust the melt viscosity. It can be exemplified by silica powder, alumina powder, and the like. The insulating conductive particles are preferably fine conductive particles having a particle diameter of 20 to 1000 nm, and the blending amount is preferably 5 to 50 parts by mass relative to 100 parts by mass of a thermopolymerizable compound (photopolymerizable compound) such as an epoxy compound. parts by mass.

本發明之異向性導電膜中,除含有上述絕緣性導電粒子以外,亦可含有填充劑、軟化劑、促進劑、抗老化劑、著色劑(顏料、染料)、有機溶劑、離子捕捉劑等。 The anisotropic conductive film of the present invention may contain, in addition to the above-described insulating conductive particles, fillers, softeners, accelerators, antiaging agents, colorants (pigments, dyes), organic solvents, ion scavengers, and the like .

(絕緣性樹脂層之層厚) (layer thickness of insulating resin layer)

於第1連接構造體40A之製造所使用之異向性導電膜10A中,絕緣性樹脂層2之層厚根據導電粒子1之平均粒徑D或第1電子零件31、第2電子零件32、及第3電子零件33之端子高度而變動,因此並無特別限定,作為一例,於平均粒徑D未達10μm之情形時,較佳為將絕緣性樹脂層2之層厚La與導電粒子1之平均粒徑D之比(La/D)設為0.3以上且10以下,更佳為設為3以下,進而較佳設為1以下。就維持絕緣性樹脂層2中之導電粒子1之配置之方面而言,更佳為將比(La/D)設為0.4以上。另外,就抑制異向性導電連接時之過度樹脂流動及實現低壓構裝之方面而言,更佳設為1以下。進而,就容易使導電粒子1自絕緣性樹脂層2露出,且更容易進行低壓構裝之方面而言,較佳為將該比(La/D)設為未達1,更佳為未達0.6,進而較佳為0.5以下。此外,於將比(La/D)設為3以下之情形時,有較佳為設置最低熔融黏度低於絕緣性樹脂層2之第2絕緣性樹脂層4之情形。 In the anisotropic conductive film 10A used for the production of the first connection structure 40A, the thickness of the insulating resin layer 2 is determined by the average particle diameter D of the conductive particles 1 or the first electronic component 31, the second electronic component 32, and the terminal height of the third electronic component 33 is not particularly limited. As an example, when the average particle size D is less than 10 μm, it is preferable to set the layer thickness La of the insulating resin layer 2 and the conductive particles 1 to 10 μm. The ratio (La/D) of the average particle diameter D is 0.3 or more and 10 or less, more preferably 3 or less, and still more preferably 1 or less. From the viewpoint of maintaining the arrangement of the conductive particles 1 in the insulating resin layer 2, the ratio (La/D) is more preferably 0.4 or more. Moreover, it is more preferable to set it as 1 or less from the point of suppressing the excess resin flow at the time of anisotropic conductive connection and realizing a low pressure structure. Furthermore, the ratio (La/D) is preferably less than 1, more preferably less than 1, from the viewpoint of easily exposing the conductive particles 1 from the insulating resin layer 2 and facilitating low-voltage packaging. 0.6, more preferably 0.5 or less. In addition, when the ratio (La/D) is set to 3 or less, it may be preferable to provide the second insulating resin layer 4 having a lower minimum melt viscosity than the insulating resin layer 2 .

另一方面,於平均粒徑D為10μm以上之情形時,關於La/D之上限設為3.5以下,較佳為設為2.5以下,更佳為設為2以下,關於下限為0.8以上,較佳為1以上,更佳為大於1.3。 On the other hand, when the average particle diameter D is 10 μm or more, the upper limit of La/D is 3.5 or less, preferably 2.5 or less, more preferably 2 or less, and the lower limit is 0.8 or more, preferably Preferably it is 1 or more, More preferably, it is more than 1.3.

另外,不論平均粒徑D之大小如何,若絕緣性樹脂層2之層厚La過大而該比(La/D)變得過大,則異向性導電連接時導電粒子1難以壓抵於端子,並且導電粒子容易因樹脂流動而流動。因此,導電粒子容易發生位置偏移,端子之導電粒子之捕捉性降低。另外,為了將導電粒子壓抵於端子,按壓治具所需之推力亦增大,妨礙低壓構裝。反之,若絕緣性樹脂層2之層厚La過小而該比變得過小,則難以利用絕緣性樹脂層2將導電粒子1維持於特定之位置。 In addition, regardless of the size of the average particle diameter D, if the layer thickness La of the insulating resin layer 2 is too large and the ratio (La/D) becomes too large, the conductive particles 1 are difficult to press against the terminals during anisotropic conductive connection. And the conductive particles easily flow due to the resin flow. Therefore, the positional displacement of the conductive particles is likely to occur, and the captureability of the conductive particles in the terminal is lowered. In addition, in order to press the conductive particles against the terminals, the thrust required to press the jig also increases, which hinders low-voltage assembly. Conversely, if the layer thickness La of the insulating resin layer 2 is too small and the ratio becomes too small, it becomes difficult to maintain the conductive particles 1 at a specific position by the insulating resin layer 2 .

(第2絕緣性樹脂層) (Second insulating resin layer)

於異向性導電膜10A中,亦可於絕緣性樹脂層2積層最低熔融黏度低於該絕緣性樹脂層2之第2絕緣性樹脂層4(圖10~圖12)。該第2絕緣性樹脂層4可於異向性導電連接時填充由電子零件之凸塊等端子所形成之空間,而提高對向之電 子零件彼此之接著性。即,為了能夠實現使用異向性導電膜之電子零件之低壓構裝,且抑制異向性導電連接時之絕緣性樹脂層2之樹脂流動而提高導電粒子1之粒子捕捉性,較理想為提高絕緣性樹脂層2之黏度,並且於導電粒子1不發生位置偏移之範圍內減薄絕緣性樹脂層2之厚度,但若絕緣性樹脂層2之厚度變得過薄,則導致使對向之電子零件彼此接著之樹脂量之不足,因此有接著性降低之虞。對此,藉由在異向性導電連接時設置黏度低於絕緣性樹脂層2之第2絕緣性樹脂層4,亦可提高電子零件彼此之接著性,由於第2絕緣性樹脂層4之流動性較高,故而可不易阻礙利用端子之導電粒子之夾持或壓入。 In the anisotropic conductive film 10A, a second insulating resin layer 4 having a lower minimum melt viscosity than the insulating resin layer 2 may be laminated on the insulating resin layer 2 ( FIGS. 10 to 12 ). The second insulating resin layer 4 can fill the space formed by terminals such as bumps of electronic components during anisotropic conductive connection, thereby improving the adhesion between the opposing electronic components. That is, in order to realize low-voltage packaging of electronic components using the anisotropic conductive film, and to suppress the flow of resin in the insulating resin layer 2 during anisotropic conductive connection to improve the particle trapping properties of the conductive particles 1, it is desirable to increase the The viscosity of the insulating resin layer 2 is reduced, and the thickness of the insulating resin layer 2 is reduced within the range where the positional displacement of the conductive particles 1 does not occur, but if the thickness of the insulating resin layer 2 becomes too thin, it will cause the opposite The amount of resin for bonding the electronic parts to each other is insufficient, so there is a possibility that the adhesiveness may be lowered. On the other hand, by providing the second insulating resin layer 4 with a lower viscosity than the insulating resin layer 2 during the anisotropic conductive connection, the adhesiveness of the electronic components can also be improved. Due to the flow of the second insulating resin layer 4 It has high performance, so it is not easy to hinder the clamping or pressing of the conductive particles using the terminals.

於導電粒子分散層3上積層第2絕緣性樹脂層4之情形時,無論第2絕緣性樹脂層4是否位於凹陷2b之形成面上,均較佳為將第2絕緣性樹脂層4貼於利用工具進行加壓之電子零件(將絕緣性樹脂層2貼於載置於載台之電子零件)。藉此,可避免導電粒子之無用之移動,可提高捕捉性。 In the case of laminating the second insulating resin layer 4 on the conductive particle dispersion layer 3, it is preferable to stick the second insulating resin layer 4 on the surface of the depression 2b regardless of whether the second insulating resin layer 4 is located on the surface where the depressions 2b are formed. An electronic component pressurized with a tool (the insulating resin layer 2 is attached to the electronic component placed on the stage). Thereby, useless movement of the conductive particles can be avoided, and capture performance can be improved.

絕緣性樹脂層2與第2絕緣性樹脂層4之最低熔融黏度比越具有差異,由電子零件之電極或凸塊所形成之空間越容易被第2絕緣性樹脂層4填充,越可提高電子零件彼此之接著性。另外,越具有該差異,存在於導電粒子分散層3中之絕緣性樹脂之移動量變得相對越少,端子間之導電粒子1越不易因樹脂流動而流動,藉此端子之導電粒子之捕捉性提高,故而較佳。於實際應用中,絕緣性樹脂層2與第2絕緣性樹脂層4之最低熔融黏度比較佳為2以上,更佳為5以上,進而較佳為8以上。另一方面,若該比過大,則於將長條之異向性導電膜製成捲裝體之情形時,有樹脂之溢出或黏連之虞,因此於實際應用中較佳為15以下。更具體而言,第2絕緣性樹脂層4之較佳之最低熔融黏度滿足上述比,且為3000Pa‧s以下,更佳為2000Pa‧s以下,尤佳為100~2000Pa‧s。 The greater the difference in the minimum melt viscosity ratio between the insulating resin layer 2 and the second insulating resin layer 4, the easier it is for the spaces formed by the electrodes or bumps of electronic components to be filled with the second insulating resin layer 4, and the higher the electron density is. Adhesion of parts to each other. In addition, the more this difference is present, the less the amount of movement of the insulating resin existing in the conductive particle dispersion layer 3 is relatively small, and the conductive particles 1 between the terminals are less likely to flow due to the resin flow, whereby the conductive particles of the terminals can be trapped. increase, so it is better. In practical application, the minimum melt viscosity of the insulating resin layer 2 and the second insulating resin layer 4 is preferably 2 or more, more preferably 5 or more, and still more preferably 8 or more. On the other hand, if the ratio is too large, when the long anisotropic conductive film is made into a roll, there is a risk of resin overflow or sticking, so in practice, it is preferably 15 or less. More specifically, the preferred minimum melt viscosity of the second insulating resin layer 4 satisfies the above ratio, and is 3000 Pa·s or less, more preferably 2000 Pa·s or less, and still more preferably 100 to 2000 Pa·s.

此外,第2絕緣性樹脂層4可藉由在與絕緣性樹脂層2相同之樹脂組成物中調整黏度而形成。 In addition, the second insulating resin layer 4 can be formed by adjusting the viscosity in the same resin composition as the insulating resin layer 2 .

另外,第2絕緣性樹脂層4之層厚較佳為4~20μm。或者,相對於導電粒子直徑、具體而言為其平均粒徑,較佳為1~8倍。 In addition, the layer thickness of the second insulating resin layer 4 is preferably 4 to 20 μm. Alternatively, it is preferably 1 to 8 times the diameter of the conductive particles, specifically, the average particle diameter thereof.

另外,將絕緣性樹脂層2與第2絕緣性樹脂層4合併而成之異向性導電膜整體之最低熔融黏度於實際應用中為8000Pa‧s以下,較佳為200~7000Pa‧s,尤佳為200~4000Pa‧s。 In addition, the minimum melt viscosity of the entire anisotropic conductive film formed by combining the insulating resin layer 2 and the second insulating resin layer 4 is practically 8000 Pa·s or less, preferably 200-7000 Pa·s, especially The optimum is 200~4000Pa·s.

作為第2絕緣性樹脂層4之具體之積層態樣,例如可如圖10所示般於導電粒子分散層3之單面積層第2絕緣性樹脂層4。於該情形時,導電粒子1之平均粒徑D與絕緣性樹脂層2之層厚La之關係可如上所述將La/D設為0.3以上且10以下。 As a specific lamination state of the second insulating resin layer 4 , for example, as shown in FIG. 10 , the second insulating resin layer 4 can be layered on a single area of the conductive particle dispersion layer 3 . In this case, the relationship between the average particle diameter D of the conductive particles 1 and the layer thickness La of the insulating resin layer 2 can be made La/D to be 0.3 or more and 10 or less as described above.

如圖11所示,於導電粒子1自絕緣性樹脂層2之單面突出之情形時,亦可於該突出之面積層第2絕緣性樹脂層4,使導電粒子1沒入至第2絕緣性樹脂層4。於導電粒子1之埋入率為0.95以下之情形時,較佳為如此積層第2絕緣性樹脂層4,於為0.9以下之情形時更佳為如此積層。 As shown in FIG. 11 , when the conductive particles 1 protrude from one side of the insulating resin layer 2 , the second insulating resin layer 4 may be layered on the protruding area so that the conductive particles 1 are submerged in the second insulating resin layer 4 . Resin layer 4. When the embedding ratio of the conductive particles 1 is 0.95 or less, it is preferable to laminate the second insulating resin layer 4 in this way, and when it is 0.9 or less, it is more preferable to laminate in this way.

亦可如圖12所示,於“與埋入有導電粒子1之絕緣性樹脂層2之面為相反側之面”積層第2絕緣性樹脂層4。 As shown in FIG. 12, the 2nd insulating resin layer 4 may be laminated|stacked on "the surface on the opposite side to the surface of the insulating resin layer 2 in which the conductive particle 1 is embedded".

(第3絕緣性樹脂層) (third insulating resin layer)

亦可於隔著絕緣性樹脂層2而與第2絕緣性樹脂層4相反之側設置第3絕緣性樹脂層。可使第3絕緣性樹脂層作為黏性層發揮功能。亦可與第2絕緣性樹脂層4同樣地為了填充由電子零件之電極或凸塊所形成之空間而設置。 A third insulating resin layer may be provided on the opposite side to the second insulating resin layer 4 with the insulating resin layer 2 interposed therebetween. The third insulating resin layer can function as an adhesive layer. Similar to the second insulating resin layer 4 , it may be provided to fill spaces formed by electrodes or bumps of electronic components.

第3絕緣性樹脂層之樹脂組成、黏度及厚度可與第2絕緣性樹脂層相同,亦可不同。將絕緣性樹脂層2、第2絕緣性樹脂層4及第3絕緣性樹脂層合併所得之異向性導電膜,其最低熔融黏度並無特別限制,可設為200~4000Pa‧s。 The resin composition, viscosity and thickness of the third insulating resin layer may be the same as or different from those of the second insulating resin layer. The minimum melt viscosity of the anisotropic conductive film obtained by combining the insulating resin layer 2, the second insulating resin layer 4, and the third insulating resin layer is not particularly limited, and can be set to 200 to 4000 Pa·s.

(異向性導電膜10A之製造方法) (Manufacturing method of the anisotropic conductive film 10A)

作為異向性導電膜10A之製造方法,例如使導電粒子1以特定之規則之排列保持於絕緣性樹脂層2之表面,利用平板或滾筒將該導電粒子1壓入至絕緣性樹脂層2。 As a method of manufacturing the anisotropic conductive film 10A, for example, the conductive particles 1 are held on the surface of the insulating resin layer 2 in a specific regular arrangement, and the conductive particles 1 are pressed into the insulating resin layer 2 by a flat plate or a roller.

此處,絕緣性樹脂層2中之導電粒子1之埋入量Lb可藉由壓入導電粒子1時之按壓力、溫度等進行調整,另外,凹陷2b、2c之有無、形狀及深度可藉由壓入時之絕緣性樹脂層2之黏度、壓入速度、溫度等進行調整。 Here, the embedding amount Lb of the conductive particles 1 in the insulating resin layer 2 can be adjusted by the pressing force, temperature, etc. when the conductive particles 1 are pressed, and the presence or absence, shape and depth of the recesses 2b and 2c can be adjusted by It is adjusted by the viscosity of the insulating resin layer 2 at the time of pressing, the pressing speed, the temperature, and the like.

另外,作為使導電粒子1保持於絕緣性樹脂層2之方法,並無特別限定,例如使用轉印模使導電粒子1保持於絕緣性樹脂層2。作為轉印模,例如可使用如下者:對於矽、各種陶瓷、玻璃、不鏽鋼等金屬等無機材料、或各種樹脂等有機材料之轉印模材料,藉由光微影法等公知之開口形成方法而形成有開口。此外,轉印模可採用板狀、輥狀等形狀。 In addition, it does not specifically limit as a method of holding the conductive particle 1 in the insulating resin layer 2, For example, the conductive particle 1 is held in the insulating resin layer 2 using a transfer mold. As the transfer mold, for example, a transfer mold material of inorganic materials such as silicon, various ceramics, glass, and metals such as stainless steel, or organic materials such as various resins can be used by a known method for forming openings such as photolithography. An opening is formed. In addition, the transfer mold may take a shape such as a plate shape, a roll shape, or the like.

為了使用異向性導電膜經濟地進行電子零件之連接,較佳為異向性導電膜為某程度之長條。因此,異向性導電膜之長度較佳為製造為5m以上,更佳為製造為10m以上,進而較佳為製造為25m以上。另一方面,若使異向性導電膜變得過長,則無法使用“利用異向性導電膜進行電子零件之製造之情形時所使用的習知之連接裝置”,操作性亦較差。因此,異向性導電膜之長度較佳為製造為5000m以下,更佳為製造為1000m以下,進而較佳為製造為500m以下。就操作性優異之方面而言,較佳為將異向性導電膜之此種長條體製成捲成捲芯之捲裝體。 In order to economically connect electronic components using the anisotropic conductive film, the anisotropic conductive film is preferably elongated to some extent. Therefore, the length of the anisotropic conductive film is preferably 5 m or more, more preferably 10 m or more, and still more preferably 25 m or more. On the other hand, if the anisotropic conductive film is made too long, "a conventional connection device used in the case of manufacturing electronic components using the anisotropic conductive film" cannot be used, and the workability is also poor. Therefore, the length of the anisotropic conductive film is preferably 5000 m or less, more preferably 1000 m or less, and still more preferably 500 m or less. From the viewpoint of excellent workability, it is preferable to use such a long body of an anisotropic conductive film as a roll body wound into a core.

(第1連接構造體之製造方法) (Manufacturing method of the first connecting structure)

作為第1連接構造體40A之製造方法,於異向性導電膜10A由導電粒子分散層3之單層所構成之情形時,可藉由如下方式製造:針對各種基板等之第3電子零件33,自異向性導電膜之表面埋入導電粒子1之側暫時貼附並暫時壓接,於經暫時壓接之異向性導電膜之表面未埋入導電粒子1之側,將IC晶片等第1電子零 件31對準並進行熱壓接,並且將FPC等之第2電子零件32對準並進行熱壓接。於該情形時,可利用加壓工具自第1電子零件31及第2電子零件32之側同時壓接第1電子零件31及第2電子零件32,亦可利用加壓工具分別對該等進行壓接。 As a method of manufacturing the first connection structure 40A, when the anisotropic conductive film 10A is composed of a single layer of the conductive particle-dispersed layer 3, the third electronic component 33 for various substrates and the like can be manufactured as follows: , temporarily attach and temporarily crimp the surface of the anisotropic conductive film from the side where the conductive particles 1 are embedded, and place an IC chip, etc. The first electronic components 31 are aligned and thermocompression-bonded, and the second electronic components 32 such as FPC are aligned and thermocompression-bonded. In this case, the first electronic component 31 and the second electronic component 32 can be simultaneously crimped from the side of the first electronic component 31 and the second electronic component 32 with a pressing tool, or they can be respectively pressed with a pressing tool. crimp.

此外,於異向性導電膜之絕緣性樹脂層中不僅含有熱聚合起始劑及熱聚合性化合物,且亦含有光聚合起始劑及光聚合性化合物(亦可與熱聚合性化合物相同)之情形時,亦可將光與熱併用而代替熱壓接之壓接方法。藉此,可將導電粒子之無用之移動抑制為最小限度。另外,亦可將未埋入導電粒子之側暫時貼附於第3電子零件33而使用。亦可將異向性導電膜暫時貼附於第1電子零件及第2電子零件而非第3電子零件。 In addition, the insulating resin layer of the anisotropic conductive film contains not only a thermal polymerization initiator and a thermal polymerizable compound, but also a photopolymerization initiator and a photopolymerizable compound (which may be the same as the thermal polymerizable compound) In this case, light and heat can also be used together to replace the crimping method of thermocompression. Thereby, useless movement of the conductive particles can be suppressed to a minimum. In addition, the side where the conductive particles are not embedded may be temporarily attached to the third electronic component 33 and used. Instead of the third electronic component, the anisotropic conductive film may be temporarily attached to the first electronic component and the second electronic component.

另外,於異向性導電膜10A由導電粒子分散層3與第2絕緣性樹脂層4之積層體形成之情形時,將導電粒子分散層3暫時貼附於各種基板等之第3電子零件33並暫時壓接,將IC晶片等之第1電子零件31或FPC等之第2電子零件32對準已暫時壓接之異向性導電膜之第2絕緣性樹脂層4側而載置並進行熱壓接。亦可將異向性導電膜10A之第2絕緣性樹脂層4側暫時貼附於第1電子零件31或第2電子零件32。另外,亦可將導電粒子分散層3側暫時貼附於第1電子零件31或第2電子零件32而使用。 In addition, when the anisotropic conductive film 10A is formed of a laminate of the conductive particle-dispersed layer 3 and the second insulating resin layer 4, the conductive particle-dispersed layer 3 is temporarily attached to the third electronic components 33 such as various substrates Temporary crimping is performed, and the first electronic component 31 such as an IC chip or the second electronic component 32 such as an FPC is placed on the side of the second insulating resin layer 4 of the anisotropic conductive film that has been temporarily crimped. thermocompression. The second insulating resin layer 4 side of the anisotropic conductive film 10A may be temporarily attached to the first electronic component 31 or the second electronic component 32 . In addition, the conductive particle-dispersed layer 3 side may be temporarily attached to the first electronic component 31 or the second electronic component 32 and used.

[第2連接構造體] [Second connection structure]

(整體構成) (overall composition)

圖4A係本發明之連接構造體之態樣中之第2連接構造體40B之示意性俯視圖,圖4B、圖4C、圖4D、圖4E係第2連接構造體40B之異向性導電膜部分之示意性剖視圖之例。於該第2連接構造體40B中係利用異向性導電膜10B將具有第1端子圖案之第1電子零件31及具有端子之大小及間距與第1端子圖案不同之第2端子圖案的第2電子零件32、與“具有和第1端子圖案及第2端子圖案之各者對應之端子圖案之第3電子零件33”進行異向性導電連接,該第2連接構造體40B於如下 方面不同於第1連接構造體40A,即,使用具有導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域10p、10q者作為第2連接構造體40B之製造所使用之異向性導電膜10B。藉此,可對第1電子零件31及第2電子零件32分別進行較第1連接構造體40A更適合之連接,可進一步減少無用之導電粒子。 4A is a schematic plan view of the second connecting structure 40B in the form of the connecting structure of the present invention, and FIGS. 4B , 4C, 4D and 4E are the anisotropic conductive film portions of the second connecting structure 40B An example of a schematic cross-sectional view. In the second connection structure 40B, the first electronic component 31 having the first terminal pattern and the second terminal pattern having the terminal size and pitch different from those of the first terminal pattern are connected by the anisotropic conductive film 10B. The electronic component 32 is anisotropically conductively connected to the "third electronic component 33 having a terminal pattern corresponding to each of the first terminal pattern and the second terminal pattern", and the second connection structure 40B is different in the following respects The first connection structure 40A, that is, a plurality of regions 10p and 10q having at least one difference in the number density, particle size, and hardness of conductive particles, is used as the anisotropic conduction used in the manufacture of the second connection structure 40B. Membrane 10B. Thereby, the connection more suitable than the 1st connection structure 40A can be performed with respect to the 1st electronic component 31 and the 2nd electronic component 32, respectively, and useless conductive particles can be further reduced.

於第2連接構造體40B中,亦與關於第1連接構造體40A所圖示之圖2、圖3同樣地,連接於第3電子零件33之第1電子零件31或第2電子零件32之個數或配置並無特別限定。 The second connection structure 40B is also connected to the first electronic component 31 or the second electronic component 32 of the third electronic component 33 in the same manner as in FIGS. 2 and 3 illustrated in the first connection structure 40A. The number or arrangement is not particularly limited.

於第2連接構造體40B中,異向性導電膜10B所具有之導電粒子之個數密度、粒徑及硬度之至少一種不同之區域10p、10q可如圖4A所示般相互鄰接,亦可如圖5A所示般區域10p與區域10q隔著不存在導電粒子之區域10r而配置。圖5B、圖5C係圖5A所示之第2連接構造體40B之異向性導電膜部分之示意性剖視圖之例。如圖6A所示,區域10p與區域10q亦可隔著導電粒子之個數密度高於該等之區域10s而配置。圖6B係圖6A所示之第2連接構造體40B之異向性導電膜部分之示意性剖視圖之例。另外,導電粒子之個數密度、粒徑及硬度之至少一種不同之多個區域可如上述圖4A等所示般沿膜之短邊方向排列,亦可沿長邊方向排列。於該情形時,異向性導電膜較佳為具有:絕緣性樹脂層之厚度方向上之導電粒子之位置於絕緣性樹脂層之一表面或其附近對齊之區域、與於一表面或其附近及另一表面或其附近此兩者對齊之區域。 In the second connection structure 40B, the regions 10p and 10q in which at least one of the number density, particle diameter and hardness of the conductive particles of the anisotropic conductive film 10B are different may be adjacent to each other as shown in FIG. As shown in FIG. 5A , the region 10p and the region 10q are arranged across the region 10r in which the conductive particles do not exist. FIGS. 5B and 5C are examples of schematic cross-sectional views of the anisotropic conductive film portion of the second connection structure 40B shown in FIG. 5A . As shown in FIG. 6A , the region 10p and the region 10q may also be arranged across the region 10s in which the number density of conductive particles is higher than these. FIG. 6B is an example of a schematic cross-sectional view of the anisotropic conductive film portion of the second connection structure 40B shown in FIG. 6A . In addition, a plurality of regions different in at least one of the number density, particle size, and hardness of the conductive particles may be arranged in the short-side direction of the film as shown in FIG. 4A and the like, or may be arranged in the long-side direction. In this case, the anisotropic conductive film preferably has a region where the positions of the conductive particles in the thickness direction of the insulating resin layer are aligned on one surface or the vicinity of the insulating resin layer, and a region where the positions of the conductive particles are aligned on or near one surface of the insulating resin layer and another surface or an area near the two where the two are aligned.

(第2連接構造體之異向性導電膜) (Anisotropic conductive film of the second connection structure)

作為第2連接構造體之製造所使用之異向性導電膜10B之更具體之構成,例如於將第1電子零件31與第3電子零件33進行COG連接之情形時,於異向性導電膜10B之區域10p,將導電粒子之個數密度設為7000個/mm2以上且35000個/mm2以下,或者將導電粒子之粒徑設為2μm以上且9μm以下,或者作為導電粒子之硬度,將20%壓縮彈性率(20%K值)設為4000N/mm2以上且28000N/ mm2以下,較佳為設為4000N/mm2以上且20000N/mm2以下。另一方面,於將第2電子零件32與第3電子零件33進行FOG連接之情形時,於異向性導電膜10B之區域10q,將導電粒子之個數密度設為50個/mm2以上且10000個/mm2以下,或者將導電粒子之粒徑設為2μm以上且30μm以下,或者作為導電粒子之硬度,將20%壓縮彈性率(20%K值)設為2000N/mm2以上且18000N/mm2以下。 As a more specific configuration of the anisotropic conductive film 10B used in the manufacture of the second connection structure, for example, when the first electronic component 31 and the third electronic component 33 are COG-connected, the anisotropic conductive film In the region 10p of 10B, the number density of the conductive particles is set to 7000 pieces/mm 2 or more and 35,000 pieces/mm 2 or less, or the particle size of the conductive particles is set to 2 μm or more and 9 μm or less, or the hardness of the conductive particles, The 20% compressive elastic modulus (20% K value) is set to 4000 N/mm 2 or more and 28000 N/mm 2 or less, preferably 4000 N/mm 2 or more and 20000 N/mm 2 or less. On the other hand, when the second electronic component 32 and the third electronic component 33 are FOG-connected, the number density of conductive particles is set to 50 particles/mm 2 or more in the region 10q of the anisotropic conductive film 10B and 10,000 pieces/mm 2 or less, or the particle size of the conductive particles is set to 2 μm or more and 30 μm or less, or the hardness of the conductive particles, the 20% compressive elastic modulus (20% K value) is set to 2000 N/mm 2 or more and 18000N/ mm2 or less.

此外,上述中,第1電子零件31與第3電子零件33之連接區域及第2電子零件32與第3電子零件33之連接區域的各種數值重複,但各自以於上述範圍內數值不重複之方式設計而使用。例如若將第1電子零件31與第3電子零件33進行COG連接之區域的導電粒子之個數密度為8000個/mm2,則將第2電子零件32與第3電子零件33進行FOG連接之區域的導電粒子之個數密度未達8000個/mm2,較佳為為了容易識別而設定20%以上之差,設為6000個/mm2以下即可。其他參數亦相同。 In addition, in the above, the various numerical values of the connection area between the first electronic component 31 and the third electronic component 33 and the connection area between the second electronic component 32 and the third electronic component 33 are repeated, but the numerical values within the above ranges are not repeated. designed to be used. For example, if the number density of the conductive particles in the region where the first electronic component 31 and the third electronic component 33 are COG-connected is 8,000 particles/mm 2 , the second electronic component 32 and the third electronic component 33 are FOG-connected. The number density of the conductive particles in the region is less than 8000 particles/mm 2 , and it is preferable to set a difference of 20% or more for easy identification, and it may be set to 6000 particles/mm 2 or less. Other parameters are the same.

此處,作為20%壓縮彈性率,可測定使用微小壓縮試驗機(例如Fischer公司製造之Fischerscope H-100)對導電粒子施加壓縮荷重時之導電粒子之壓縮變量,使用藉由下述式所算出之K值:20%壓縮彈性率(K)(N/mm2)=(3/21/2)‧F‧S-3/2‧R-1/2Here, as the 20% compressive elastic modulus, the compressive variable of the conductive particles when a compressive load is applied to the conductive particles using a micro-compression tester (for example, Fischerscope H-100 manufactured by Fischer) can be measured, and calculated by the following formula The K value: 20% compressive elastic modulus (K) (N/mm 2 )=(3/2 1/2 )‧F‧S -3/2 ‧R -1/2 .

式中,F:導電粒子發生20%壓縮變形時之荷重值(N) In the formula, F: the load value when the conductive particles undergo 20% compression deformation (N)

S:導電粒子發生20%壓縮變形時之壓縮位移(mm) S: Compression displacement of conductive particles when 20% compression deformation occurs (mm)

R:導電粒子之半徑(mm)。 R: the radius (mm) of the conductive particles.

於區域10p與區域10q,根據欲連接之第1電子零件31及第2電子零件32適當決定使導電粒子之個數密度、粒徑及硬度之何種不同,但較佳為由個數密度決定。其原因在於,若使用相同之導電粒子,則可避免設計上之污染(其他種類之導電粒子非預期地混入),因此於品質管理方面較佳。因此,存在於至 少一面側之導電粒子較佳為粒徑相同,更佳為粒徑與硬度相同。 In the region 10p and the region 10q, the number density, particle size and hardness of the conductive particles are appropriately determined according to the first electronic component 31 and the second electronic component 32 to be connected, but it is preferably determined by the number density. . The reason for this is that if the same conductive particles are used, contamination in design (unexpected mixing of other types of conductive particles) can be avoided, so it is better in terms of quality control. Therefore, the conductive particles present on at least one side preferably have the same particle size, and more preferably have the same particle size and hardness.

另外,例如於區域10p與區域10q中使導電粒子之個數密度不同之情形時,可如圖4B所示,藉由使絕緣性樹脂層2之單面附近之導電粒子1之個數密度不同而形成區域10p與區域10q,亦可如圖4C、圖4D、圖4E所示,將絕緣性樹脂層2之正背兩面之導電粒子1合併而形成導電粒子之個數密度不同之區域10p與區域10q。於該情形時,亦可如圖4D所示,絕緣性樹脂層2之正背之導電粒子1於俯視下重合而形成導電粒子單元1u,且該導電粒子單元規則地排列。 In addition, for example, when the number density of the conductive particles is made different in the region 10p and the region 10q, as shown in FIG. 4B , the number density of the conductive particles 1 in the vicinity of one side of the insulating resin layer 2 can be made different by making the number density of the conductive particles 1 different. As shown in FIGS. 4C , 4D and 4E to form the regions 10p and 10q, the conductive particles 1 on the front and back sides of the insulating resin layer 2 may be combined to form the regions 10p and 10p with different numbers of conductive particles. Area 10q. In this case, as shown in FIG. 4D , the conductive particles 1 on the front and back of the insulating resin layer 2 are overlapped in plan view to form conductive particle units 1u, and the conductive particle units are regularly arranged.

於第2連接構造體40B之製造所使用之異向性導電膜10B中,導電粒子自身之構成、絕緣性樹脂層2之構成、第2絕緣性樹脂層4之構成等可設為與第1連接構造體40A之製造所使用之異向性導電膜10A相同。 In the anisotropic conductive film 10B used for the manufacture of the second connection structure 40B, the configuration of the conductive particles themselves, the configuration of the insulating resin layer 2 , the configuration of the second insulating resin layer 4 , and the like can be made the same as those of the first. The anisotropic conductive film 10A used for the manufacture of the connection structure 40A is the same.

關於第2連接構造體40B之製造所使用之異向性導電膜10B之製造方法,亦可依據第1連接構造體40A之製造所使用之異向性導電膜10A而製造。例如使形成區域10p之導電粒子1保持於絕緣性樹脂層2之單面,並利用平板或滾筒將該導電粒子1壓入至絕緣性樹脂層2(第1壓入步驟),其次使形成區域10p、或區域10p及區域10q之導電粒子1保持於先前壓入有導電粒子之絕緣性樹脂層2之單面或其相反面,並利用平板或滾筒將該導電粒子壓入至絕緣性樹脂層(第2壓入步驟)。於該情形時,於第2壓入步驟中所壓入之導電粒子1可於俯視下成為於第1壓入步驟中壓入導電粒子1之區域之一部分(圖4C、圖4D),亦可包含第1壓入步驟中壓入導電粒子1之整個區域(圖4E),亦可與於第1壓入步驟中壓入導電粒子1之區域局部地重疊(圖6B)。根據導電粒子1之粒子配置,亦可將第1壓入步驟中用於使導電粒子1附著於絕緣性樹脂層2之轉印模於第2壓入步驟中亦用於使導電粒子1附著於絕緣性樹脂層2(圖5C)。藉此,可降低異向性導電膜之製造成本,故而較佳。於該情形時,可使導電粒子1附著於絕緣性樹脂層2之一表面或另一表面。 About the manufacturing method of the anisotropic conductive film 10B used for the manufacture of the 2nd connection structure 40B, it can also manufacture according to the anisotropic conductive film 10A used for the manufacture of the 1st connection structure 40A. For example, the conductive particles 1 in the formation region 10p are held on one side of the insulating resin layer 2, and the conductive particles 1 are pressed into the insulating resin layer 2 using a flat plate or a roller (first pressing step), and then the formation region is 10p, or the conductive particles 1 in the regions 10p and 10q are held on one side or the opposite side of the insulating resin layer 2 previously pressed with the conductive particles, and the conductive particles are pressed into the insulating resin layer using a flat plate or a roller (2nd pressing step). In this case, the conductive particles 1 pressed in the second pressing step may be a part of the region where the conductive particles 1 are pressed in the first pressing step in plan view ( FIG. 4C , FIG. 4D ), or The entire area including the conductive particles 1 pressed in the first pressing step ( FIG. 4E ) may partially overlap with the area where the conductive particles 1 are pressed in the first pressing step ( FIG. 6B ). Depending on the particle arrangement of the conductive particles 1 , the transfer mold for adhering the conductive particles 1 to the insulating resin layer 2 in the first press-in step may also be used to adhere the conductive particles 1 to the insulating resin layer 2 in the second press-in step. Insulating resin layer 2 (FIG. 5C). Thereby, since the manufacturing cost of an anisotropic conductive film can be reduced, it is preferable. In this case, the conductive particles 1 can be attached to one surface or the other surface of the insulating resin layer 2 .

於第1壓入步驟中所壓入之導電粒子與於第2壓入步驟中所壓入之導電粒子之粒徑或硬度視需要可相同,亦可不同。另外,可使第1壓入步驟中所壓入之導電粒子之排列與第2壓入步驟中所壓入之導電粒子之排列不同,亦可使第1壓入步驟中所壓入之導電粒子之個數密度與第2壓入步驟中所壓入之導電粒子之個數密度不同。 The particle size or hardness of the conductive particles pressed in the first pressing step and the conductive particles pressed in the second pressing step may be the same or different as required. In addition, the arrangement of the conductive particles pressed in the first pressing step can be made different from the arrangement of the conductive particles pressed in the second pressing step, and the conductive particles pressed in the first pressing step can also be made different. The number density is different from the number density of the conductive particles pressed in the second pressing step.

此外,於將異向性導電膜製造成捲裝體之情形時,一般將寬度較大之異向性導電膜切成特定寬度之長條而製成帶狀,並將其捲成捲芯,但例如對於圖4E所示之異向性導電膜10B,可預先以不同之個數密度分別均勻地形成絕緣性樹脂層2之正背兩面附近之導電粒子,將其於虛線之位置切開而製成帶狀之異向性導電膜,並於此處形成區域10p與區域10q。藉此,可簡單地形成個數密度不同之區域10p與區域10q。 In addition, in the case of manufacturing the anisotropic conductive film into a roll body, generally, the anisotropic conductive film with a large width is cut into a strip of a specific width to form a strip, and it is wound into a core, However, for example, for the anisotropic conductive film 10B shown in FIG. 4E , the conductive particles near the front and back sides of the insulating resin layer 2 can be uniformly formed in advance with different number densities, and the conductive particles can be cut at the positions of the dotted lines. A strip-shaped anisotropic conductive film is formed, and a region 10p and a region 10q are formed there. Thereby, the area|region 10p and the area|region 10q which differ in number density can be formed easily.

就上述相同之原因而言,較佳為於與膜之長邊方向正交之方向上,一側與相反側之導電粒子之個數密度不同。另外,就製造方面之原因而言,較佳為膜之一面與相反面之導電粒子之個數密度、粒徑及硬度不同。此時,更佳為膜之一面與相反面之任一面之導電粒子之粒子間距離不同。 For the same reason as described above, it is preferable that the number density of the conductive particles on one side and the opposite side are different in the direction orthogonal to the longitudinal direction of the film. In addition, from the viewpoint of production, it is preferable that the number density, particle diameter, and hardness of the conductive particles on one surface and the opposite surface of the film are different. In this case, it is more preferable that the distance between the conductive particles is different between the conductive particles on one side of the film and on the opposite side.

實施例 Example

以下,藉由實施例具體地說明本發明。 Hereinafter, the present invention will be specifically described by way of examples.

實施例1~7、比較例1、2 Examples 1 to 7, Comparative Examples 1 and 2

(1)異向性導電膜之製造 (1) Manufacture of anisotropic conductive film

以表1所示之組成,分別製備形成導電粒子分散層之絕緣性樹脂層形成用樹脂組成物、及第2絕緣性樹脂層形成用樹脂組成物。絕緣性樹脂層之最低熔融黏度為3000Pa‧s以上,該絕緣性樹脂層之最低熔融黏度與第2絕緣性樹脂層之最低熔融黏度之比為2以上。 With the compositions shown in Table 1, a resin composition for forming an insulating resin layer and a resin composition for forming a second insulating resin layer that form the conductive particle dispersion layer were prepared, respectively. The minimum melt viscosity of the insulating resin layer is 3000 Pa·s or more, and the ratio of the minimum melt viscosity of the insulating resin layer to the minimum melt viscosity of the second insulating resin layer is 2 or more.

利用棒式塗佈機將形成絕緣性樹脂層(高黏度樹脂層)之樹脂組 成物塗佈於膜厚度50μm之PET膜上,使其於80℃之烘箱中乾燥5分鐘,而於PET膜上形成表2所示之厚度的絕緣性樹脂層。同樣地,以表2所示之厚度於PET膜上形成第2絕緣性樹脂層。 The resin composition for forming the insulating resin layer (high-viscosity resin layer) was coated on a PET film with a film thickness of 50 μm using a bar coater, dried in an oven at 80° C. for 5 minutes, and then applied to the PET film. An insulating resin layer having a thickness shown in Table 2 was formed. Similarly, the 2nd insulating resin layer was formed on the PET film by the thickness shown in Table 2.

Figure 106142172-A0202-12-0030-1
Figure 106142172-A0202-12-0030-1

另一方面,以導電粒子(平均粒徑3μm或4μm)於俯視下成為六角格子排列且導電粒子之俯視下之個數密度(面密度)成為表2所示之數值之方式製作模具。此外,於表2中於FOG側與COG側導電粒子之面密度不同者係於一個模具形成面密度不同之2個區域。使公知之透明性樹脂之顆粒以熔融之狀態流入該模具中,冷卻並凝固,藉此形成凹部為六角格子排列圖案之樹脂模具。 On the other hand, the conductive particles (average particle size of 3 μm or 4 μm) were arranged in a hexagonal lattice in plan view, and the number density (area density) of the conductive particles in plan view was the numerical value shown in Table 2. In addition, in Table 2, those with different areal densities of the conductive particles on the FOG side and the COG side were formed in one mold to form two regions with different areal densities. A well-known transparent resin particle is poured into the mold in a molten state, cooled and solidified, thereby forming a resin mold having a hexagonal lattice pattern of concave portions.

藉由在該樹脂模具之凹部填充表2所示之平均粒徑之導電粒子(平均粒徑3μm:積水化學工業股份有限公司製造之AUL703、及平均粒徑4μm:積水化學工業股份有限公司製造之AUL704),並於其上覆蓋上述絕緣性樹脂層,於60℃下以0.5MPa進行按壓而貼合。繼而,將絕緣性樹脂層自模剝離,將絕緣性樹脂層上之導電粒子於(按壓條件:60~70℃、0.5MPa)下壓入至該絕緣性樹脂層內,形成導電粒子分散層(實施例1~7)。 The concave portion of the resin mold was filled with conductive particles having an average particle size shown in Table 2 (average particle size 3 μm: AUL703 manufactured by Sekisui Chemical Industry Co., Ltd., and average particle size 4 μm: Sekisui Chemical Industry Co., Ltd. AUL704), and the insulating resin layer described above was covered thereon, and it was pressed at 60° C. at 0.5 MPa and bonded. Then, the insulating resin layer was peeled off from the mold, and the conductive particles on the insulating resin layer were pressed into the insulating resin layer under (pressing conditions: 60 to 70° C., 0.5 MPa) to form a conductive particle dispersion layer ( Embodiment 1~7).

於比較例1、2中,於形成表1所示之絕緣性樹脂層之樹脂組成物中混合導電粒子,形成導電粒子以單層無規分散而成之導電粒子分散層。 In Comparative Examples 1 and 2, conductive particles were mixed with the resin composition forming the insulating resin layer shown in Table 1 to form a conductive particle-dispersed layer in which the conductive particles were randomly dispersed in a single layer.

進而,藉由在導電粒子分散層之表面積層第2絕緣性樹脂層而製作雙層型之異向性導電膜(實施例1~7、比較例1、2) Furthermore, by layering a second insulating resin layer on the surface area of the conductive particle-dispersed layer, a two-layer type anisotropic conductive film was produced (Examples 1 to 7, Comparative Examples 1 and 2)

此外,使用微小壓縮試驗機(例如Fischer公司製造之Fischerscope H-100)測定所使用之導電粒子之20%壓縮彈性率(20%K值)。將該結果示於表2。 In addition, the 20% compressive elastic modulus (20% K value) of the conductive particles used is measured using a micro-compression tester (eg, Fischerscope H-100 manufactured by Fischer Corporation). The results are shown in Table 2.

(2)評價 (2) Evaluation

將(1)中所製作之實施例及比較例之異向性導電膜裁剪為對於能夠應用於以下之評價用連接物之製作而言充分之面積,將所裁剪之異向性導電膜之一部分配置於以下所示之評價用IC與玻璃基板之間,於180℃、60MPa、5秒之條件下加熱加壓而進行異向性導電連接,其次藉由使用相同之異向性導電膜的其他區域將評價用FPC,於工具寬度1.5mm、200℃、5MPa、5秒之條件下加熱加壓而連接於該玻璃基板,從而獲得利用1片異向性導電膜將評價用IC及評價用FPC異向性導電連接於玻璃基板而成之評價用連接物。 The anisotropic conductive films of the examples and comparative examples produced in (1) were cut out to an area sufficient for the production of the following evaluation connectors, and a part of the cut anisotropic conductive films was cut out. Arranged between the IC for evaluation shown below and the glass substrate, heated and pressurized under the conditions of 180° C., 60 MPa, 5 seconds to perform anisotropic conductive connection, followed by other using the same anisotropic conductive film. The FPC for evaluation was heated and pressurized under the conditions of a tool width of 1.5 mm, 200° C., 5 MPa, and 5 seconds, and was connected to the glass substrate to obtain an IC for evaluation and an FPC for evaluation using one sheet of anisotropic conductive film. An anisotropic conductive connection to a glass substrate is a connector for evaluation.

評價用IC: IC for evaluation:

外形1.8×30mm Outline 1.8×30mm

厚度0.5mm Thickness 0.5mm

凸塊規格尺寸30×85μm,凸塊間距離10μm,凸塊高度15μm,端子個數820個 The size of bumps is 30×85μm, the distance between bumps is 10μm, the height of bumps is 15μm, and the number of terminals is 820

評價用FPC: FPC for evaluation:

端子間距20μm Terminal pitch 20μm

端子寬度:端子間間隙=1:1 Terminal width: gap between terminals = 1:1

聚醯亞胺膜厚/銅箔厚(PI/Cu)=38/8,鍍錫(Sn plating) Polyimide film thickness/copper foil thickness (PI/Cu)=38/8, tin plating (Sn plating)

玻璃基板: Glass base board:

(COG側) (COG side)

玻璃材質Corning公司製造之1737F Glass material Corning 1737F

電極ITO配線 Electrode ITO wiring

配線厚度0.5mm Wiring thickness 0.5mm

(FOG側) (FOG side)

電極ITO配線 Electrode ITO wiring

配線厚度0.7mm Wiring thickness 0.7mm

對於如此獲得之評價用連接物,以如下方式測定(a)導通電阻、(b)導通可靠性、(c)最低捕捉數、(d)短路率並進行評價。將結果示於表2。 About the connector for evaluation thus obtained, (a) conduction resistance, (b) conduction reliability, (c) minimum trapping number, (d) short-circuit rate were measured and evaluated as follows. The results are shown in Table 2.

(a)導通電阻 (a) On-resistance

藉由四端子法測定評價用連接物之COG側連接部與FOG側連接部之導通電阻。於實際使用中較佳為2Ω以下。 The on-resistance of the COG-side connection portion and the FOG-side connection portion of the connector for evaluation was measured by the four-terminal method. In actual use, it is preferably 2Ω or less.

(b)導通可靠性 (b) On reliability

將評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時,與初期導通電阻同樣地測定其後之COG側連接部與FOG側連接部之導通電阻。於實際使用中較佳為5Ω以下。 The connector for evaluation was left to stand in a thermostat with a temperature of 85°C and a humidity of 85%RH for 500 hours, and the subsequent on-resistance of the COG-side connection part and the FOG-side connection part was measured in the same manner as the initial on-resistance. In actual use, it is preferably 5Ω or less.

(c)最低捕捉數 (c) Minimum number of catches

針對評價用連接物之COG側連接部與FOG側連接部各者之端子100個計測導電粒子之捕捉數,並求出最低捕捉數,依據如下基準進行評價。於實際使用中較佳為B評價以上。 The number of captured conductive particles was measured for 100 terminals of each of the COG-side connection portion and the FOG-side connection portion of the connector for evaluation, and the minimum captured number was obtained, and the evaluation was performed according to the following criteria. In actual use, the B evaluation or higher is preferable.

最低捕捉數評價基準 Minimum catch count evaluation standard

A:10個以上 A: 10 or more

B:5個以上且未達10個 B: 5 or more but less than 10

C:3個以上且未達5個 C: 3 or more but less than 5

D:未達3個 D: less than 3

(d)短路率 (d) Short circuit rate

針對評價用連接物之COG側連接部與FOG側連接部各者,藉由以下之方法計測各者之短路數,求出所計測之短路數相對於端子數之比率作為短路率,根據如下基準進行評價。於實際使用中較佳為B評價以上。 For each of the COG-side connection part and the FOG-side connection part of the connector for evaluation, the number of short circuits in each of them was measured by the following method, and the ratio of the measured number of short circuits to the number of terminals was obtained as the short circuit rate, based on the following criteria Evaluate. In actual use, the B evaluation or higher is preferable.

COG側連接部之短路率 Short circuit rate of COG side connection

使用如下之短路率之評價用IC,於與上述相同之連接條件下獲得COG側之評價用連接物,計測所獲得之評價用連接物之短路數,求出所計測之短路數相對於評價用IC之端子數之比率作為短路率。 Using the following IC for evaluation of short-circuit rate, under the same connection conditions as above, obtain a connector for evaluation on the COG side, measure the number of shorts in the obtained connector for evaluation, and obtain the measured number of shorts relative to the number of shorts for evaluation The ratio of the number of IC terminals is used as the short circuit rate.

短路率之評價用IC(7.5μm間隙之梳齒TEG(test element group,測試元件組)):外形15×13mm IC for short-circuit rate evaluation (comb-teeth TEG (test element group) with 7.5μm gap): 15×13mm

厚度0.5mm Thickness 0.5mm

凸塊規格尺寸25×140μm,凸塊間距離7.5μm,凸塊高度15μm Bump size 25×140μm, distance between bumps 7.5μm, bump height 15μm

FOG側連接部之短路率 Short circuit rate of FOG side connection

(a)藉由將與導通電阻試驗之評價用連接物之製作所使用之評價用FPC相同的FPC於相同之連接條件下連接於無鹼玻璃基板(厚度0.7mm),而獲得FOG側之評價用連接物,計測所獲得之評價用連接物之短路數,根據所計測之短路數與評價用連接物之間隙數求出短路率。 (a) FOG-side evaluation was obtained by connecting the same FPC to an alkali-free glass substrate (thickness 0.7 mm) under the same connection conditions as the evaluation FPC used for the preparation of the connector for evaluation of the on-resistance test. As for the connector, the number of short circuits of the obtained connector for evaluation was measured, and the short-circuit rate was determined from the number of short circuits measured and the number of gaps of the connector for evaluation.

短路率評價基準 Short circuit rate evaluation standard

A:未達50ppm A: less than 50ppm

B:50ppm以上且未達100ppm B: 50ppm or more and less than 100ppm

C:100ppm以上且未達200ppm C: 100ppm or more and less than 200ppm

D:200ppm以上 D: 200ppm or more

Figure 106142172-A0202-12-0034-2
Figure 106142172-A0202-12-0034-2

根據表2,於實施例4、5、6、7中,於FOG側連接部與COG側連接部,導電粒子之面密度、粒徑、硬度均未變化,但導電粒子規則地排列,因此導通電阻、導通可靠性、捕捉數、短路率均成為能夠實際使用之結果。另外,於實施例1、2、3中,可知於FOG側連接部與COG側連接部,導電粒子之面密度、粒徑、硬度不同,FOG側或COG側連接部之導通可靠性較實施例4、5、6、7有所提高。相對於此,比較例1、2於FOG側連接部與COG側連接部,導電粒子之面密度、粒徑、硬度未變化,且導電粒子無規地分散,因此於導電粒子之個數密度較高之比較例1中,FOG側連接部之導通電阻與導通可靠性較差,於導電粒子之個數密度較低之比較例2中,COG側連接部之導通電阻與導通可靠性較差。 According to Table 2, in Examples 4, 5, 6, and 7, the areal density, particle size, and hardness of the conductive particles did not change at the FOG-side connecting portion and the COG-side connecting portion, but the conductive particles were regularly arranged, so the conduction was conducted. Resistance, conduction reliability, number of catches, and short-circuit rate are all results that can be used in practice. In addition, in Examples 1, 2, and 3, it can be seen that the area density, particle size, and hardness of the conductive particles are different between the FOG-side connecting portion and the COG-side connecting portion, and the conduction reliability of the FOG-side or COG-side connecting portion is higher than that of the Example. 4, 5, 6, and 7 have improved. On the other hand, in Comparative Examples 1 and 2, the areal density, particle size, and hardness of the conductive particles did not change in the FOG-side connecting portion and the COG-side connecting portion, and the conductive particles were randomly dispersed, so the number density of the conductive particles was higher. In Comparative Example 1, which is high, the on-resistance and on-reliability of the FOG-side connecting portion are poor, and in Comparative Example 2, where the number density of conductive particles is low, the on-resistance and on-reliability of the COG-side connecting portion are poor.

1‧‧‧導電粒子 1‧‧‧Conductive particles

2‧‧‧絕緣性樹脂層 2‧‧‧Insulating resin layer

10A‧‧‧異向性導電膜 10A‧‧‧Anisotropic Conductive Film

31‧‧‧第1電子零件 31‧‧‧First Electronic Parts

32‧‧‧第2電子零件 32‧‧‧Second electronic component

33‧‧‧第3電子零件 33‧‧‧The third electronic component

40A‧‧‧第1連接構造體 40A‧‧‧First connection structure

Claims (19)

一種連接構造體,其利用異向性導電膜將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接,該第1電子零件具有第1端子圖案,該第2電子零件具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件具有與第1端子圖案及第2端子圖案分別對應之端子圖案,並且異向性導電膜具有下述之區域中至少一者:導電粒子規則地排列之區域、以及導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域,上述異向性導電膜之導電粒子附近之絕緣性樹脂層之表面相對於鄰接之導電粒子間之中央部之絕緣性樹脂層的切平面具有傾斜或起伏,於上述傾斜中,導電粒子附近之絕緣性樹脂層之表面相對於上述切平面發生缺損,於上述起伏中,導電粒子之正上方之絕緣性樹脂層之樹脂量較上述導電粒子之正上方的絕緣性樹脂層之表面位於該切平面時少。 A connection structure which anisotropically conductively connects a first electronic component, a second electronic component, and a third electronic component with an anisotropic conductive film, the first electronic component having a first terminal pattern, and the second electronic component It has a second terminal pattern whose size and pitch of terminals are different from those of the first terminal pattern, the third electronic component has terminal patterns corresponding to the first terminal pattern and the second terminal pattern, respectively, and the anisotropic conductive film has the following At least one of the regions: a region in which the conductive particles are regularly arranged, and a plurality of regions in which at least one of the number density, particle size, and hardness of the conductive particles is different, and the insulating resin layer near the conductive particles of the above-mentioned anisotropic conductive film The surface is inclined or undulated with respect to the tangent plane of the insulating resin layer in the central part between the adjacent conductive particles. In the above-mentioned inclination, the surface of the insulating resin layer near the conductive particles is defective with respect to the tangent plane. In the undulation, the resin amount of the insulating resin layer directly above the conductive particles is smaller than when the surface of the insulating resin layer directly above the conductive particles is located on the tangent plane. 如申請專利範圍第1項之連接構造體,其中,異向性導電膜具有導電粒子規則地排列且導電粒子之個數密度未達35000個/mm2之區域。 The connecting structure of claim 1, wherein the anisotropic conductive film has a region where conductive particles are regularly arranged and the number density of the conductive particles is less than 35,000/mm 2 . 如申請專利範圍第1項之連接構造體,其中,異向性導電膜具有導電粒子規則地排列且導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域。 The connection structure of claim 1, wherein the anisotropic conductive film has a plurality of regions where conductive particles are regularly arranged and at least one of the number density, particle diameter, and hardness of the conductive particles is different. 一種異向性導電膜,其具有絕緣性樹脂層及配置於該絕緣性樹脂層之導電粒子,並且具有導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域,導電粒子附近之絕緣性樹脂層之表面相對於鄰接之導電粒子間之中央部之絕緣性樹脂層的切平面具有傾斜或起伏,於上述傾斜中,導電粒子附近之絕緣性樹脂層之表面相對於上述切平面發生缺損,於上述起伏中,導電粒子之正上方之絕緣性樹脂層之樹脂量較上述導電粒子之正上方的絕緣性樹脂層之表面位 於該切平面時少。 An anisotropic conductive film, which has an insulating resin layer and conductive particles arranged in the insulating resin layer, and has a plurality of regions different in at least one of the number density, particle size and hardness of the conductive particles, and the vicinity of the conductive particles The surface of the insulating resin layer has an inclination or undulation with respect to the tangent plane of the insulating resin layer in the central part between the adjacent conductive particles, and in the above-mentioned inclination, the surface of the insulating resin layer near the conductive particles is relative to the tangent plane. Defects occur, and in the above-mentioned undulations, the resin amount of the insulating resin layer directly above the conductive particles is higher than the surface position of the insulating resin layer directly above the conductive particles. less at this tangent plane. 如申請專利範圍第4項之異向性導電膜,其中,導電粒子規則地排列。 The anisotropic conductive film of claim 4, wherein the conductive particles are regularly arranged. 如申請專利範圍第4或5項之異向性導電膜,其中,於異向性導電膜之短邊方向或長邊方向上排列有導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域。 The anisotropic conductive film of claim 4 or 5, wherein the conductive particles are arranged in the short-side direction or the long-side direction of the anisotropic conductive film with at least one difference in number density, particle size and hardness of multiple regions. 如申請專利範圍第4或5項之異向性導電膜,其具有:絕緣性樹脂層之厚度方向上之導電粒子的位置於絕緣性樹脂層之一表面或其附近對齊之區域、以及於一表面或其附近及另一表面或其附近此兩者對齊之區域。 The anisotropic conductive film of claim 4 or 5 of the scope of the application, which has: a region where the positions of the conductive particles in the thickness direction of the insulating resin layer are aligned on or near a surface of the insulating resin layer; An area in which a surface or its vicinity and another surface or its vicinity are aligned. 如申請專利範圍第7項之異向性導電膜,其具有:於異向性導電膜之俯視下2個導電粒子重合之導電粒子單元規則地排列之區域、及單獨之導電粒子規則地排列之區域。 The anisotropic conductive film of claim 7 of the scope of the application has: a region in which two conductive particle units overlapping with conductive particles are regularly arranged in a plan view of the anisotropic conductive film, and a region in which separate conductive particles are regularly arranged area. 如申請專利範圍第4或5項之異向性導電膜,其中,於絕緣性樹脂層積層有最低熔融黏度低於該絕緣性樹脂層之第2絕緣性樹脂層。 The anisotropic conductive film of claim 4 or 5 of the claimed scope, wherein the insulating resin laminate layer has a second insulating resin layer having a lower minimum melt viscosity than the insulating resin layer. 一種異向性導電膜之製造方法,其包括如下步驟:第1壓入步驟,係使導電粒子附著於絕緣性樹脂層之一表面,並將該導電粒子壓入至絕緣性樹脂層;及第2壓入步驟,係使導電粒子附著於如下述之區域,即,俯視下成為第1壓入步驟中壓入導電粒子之區域的一部分之區域、或包含第1壓入步驟中壓入導電粒子之整個區域之區域、或與第1壓入步驟中壓入導電粒子之區域局部地重疊之區域;並將該導電粒子壓入至絕緣性樹脂層;並且形成至少導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域,上述異向性導電膜之導電粒子附近之絕緣性樹脂層之表面相對於鄰接之導電粒子間之中央部之絕緣性樹脂層的切平面具有傾斜或起伏,於上述傾斜中, 導電粒子附近之絕緣性樹脂層之表面相對於上述切平面發生缺損,於上述起伏中,導電粒子之正上方之絕緣性樹脂層之樹脂量較上述導電粒子之正上方的絕緣性樹脂層之表面位於該切平面時少。 A method for manufacturing an anisotropic conductive film, comprising the steps of: a first pressing step of attaching conductive particles to a surface of an insulating resin layer, and pressing the conductive particles into the insulating resin layer; and a first pressing step. 2. The pressing step is to attach the conductive particles to an area that is a part of the area where the conductive particles are pressed in the first pressing step in plan view, or includes the conductive particles pressed in the first pressing step. The entire area of the conductive particles, or the area partially overlapping the area where the conductive particles are pressed in the first pressing step; the conductive particles are pressed into the insulating resin layer; and at least the number density of the conductive particles, the number of particles In a plurality of regions different in at least one of diameter and hardness, the surface of the insulating resin layer in the vicinity of the conductive particles of the anisotropic conductive film is inclined with respect to the tangent plane of the insulating resin layer in the central part between the adjacent conductive particles ups and downs, in the aforementioned inclinations, The surface of the insulating resin layer in the vicinity of the conductive particles is deficient with respect to the above-mentioned tangential plane, and the amount of resin in the insulating resin layer directly above the conductive particles is higher than the surface of the insulating resin layer directly above the conductive particles in the above-mentioned undulations. less at this tangent plane. 如申請專利範圍第10項之異向性導電膜之製造方法,其中,第1壓入步驟中壓入至絕緣性樹脂層之導電粒子與第2壓入步驟中壓入至絕緣性樹脂層之導電粒子的粒徑及硬度相同。 The method for producing an anisotropic conductive film of claim 10, wherein the conductive particles pressed into the insulating resin layer in the first pressing step and the conductive particles pressed into the insulating resin layer in the second pressing step The particle size and hardness of the conductive particles are the same. 如申請專利範圍第10項之異向性導電膜之製造方法,其中,第1壓入步驟中壓入至絕緣性樹脂層之導電粒子與第2壓入步驟中壓入至絕緣性樹脂層之導電粒子的粒徑或硬度不同。 The method for producing an anisotropic conductive film of claim 10, wherein the conductive particles pressed into the insulating resin layer in the first pressing step and the conductive particles pressed into the insulating resin layer in the second pressing step The conductive particles differ in particle size or hardness. 如申請專利範圍第10項之異向性導電膜之製造方法,其中,第1壓入步驟中壓入至絕緣性樹脂層之導電粒子的排列或個數密度與第2壓入步驟中壓入至絕緣性樹脂層之導電粒子的排列或個數密度不同。 The method for producing an anisotropic conductive film according to claim 10, wherein the arrangement or number density of the conductive particles pressed into the insulating resin layer in the first pressing step and the pressing in the second pressing step The arrangement and number density of the conductive particles to the insulating resin layer are different. 如申請專利範圍第10項之異向性導電膜之製造方法,其中,於第1壓入步驟中,使用轉印模使導電粒子附著於絕緣性樹脂層,於第2壓入步驟中,使用該轉印模使導電粒子附著於絕緣性樹脂層。 The method for producing an anisotropic conductive film of claim 10, wherein, in the first press-in step, conductive particles are adhered to the insulating resin layer using a transfer mold, and in the second press-in step, using This transfer mold makes conductive particles adhere to the insulating resin layer. 如申請專利範圍第10項之異向性導電膜之製造方法,其中,於第2壓入步驟中,使導電粒子附著於絕緣性樹脂層之上述一表面或另一表面。 The method for producing an anisotropic conductive film according to claim 10, wherein, in the second pressing step, conductive particles are attached to the one surface or the other surface of the insulating resin layer. 如申請專利範圍第10至15項中任一項之異向性導電膜之製造方法,其中,於第2壓入步驟後,將壓入有導電粒子之絕緣性樹脂層切開。 The method for producing an anisotropic conductive film according to any one of Claims 10 to 15, wherein the insulating resin layer into which the conductive particles are pressed is cut after the second pressing step. 一種連接構造體之製造方法,係利用異向性導電膜將第1電子零件及第2電子零件與第3電子零件進行異向性導電連接,該第1電子零件具有第1端子圖案,該第2電子零件具有端子之大小及間距與第1端子圖案不同之第2端子圖案,該第3電子零件具有與第1端子圖案及第2端子圖案分別對應之端子圖案,並且, 作為異向性導電膜,使用具有下述之區域中至少一者的異向性導電膜:具有導電粒子規則地排列之區域的區域、以及導電粒子之個數密度、粒徑及硬度之至少一種不同的多個區域,上述異向性導電膜之導電粒子附近之絕緣性樹脂層之表面相對於鄰接之導電粒子間之中央部之絕緣性樹脂層的切平面具有傾斜或起伏,於上述傾斜中,導電粒子附近之絕緣性樹脂層之表面相對於上述切平面發生缺損,於上述起伏中,導電粒子之正上方之絕緣性樹脂層之樹脂量較上述導電粒子之正上方的絕緣性樹脂層之表面位於該切平面時少。 A method of manufacturing a connection structure, comprising anisotropic conductive connection of a first electronic component, a second electronic component, and a third electronic component using an anisotropic conductive film, the first electronic component having a first terminal pattern, the first electronic component having a first terminal pattern, and the first electronic component having a first terminal pattern. 2. The electronic component has a second terminal pattern having terminals different in size and pitch from the first terminal pattern, the third electronic component has terminal patterns corresponding to the first terminal pattern and the second terminal pattern, respectively, and, As the anisotropic conductive film, an anisotropic conductive film having at least one of the following regions is used: a region having a region in which conductive particles are regularly arranged, and at least one of the number density, particle diameter, and hardness of the conductive particles In a plurality of different regions, the surface of the insulating resin layer in the vicinity of the conductive particles of the anisotropic conductive film has an inclination or undulation with respect to the tangent plane of the insulating resin layer in the central portion between the adjacent conductive particles, and in the above inclination , the surface of the insulating resin layer near the conductive particles is defective relative to the above-mentioned tangent plane, and in the above-mentioned undulations, the resin amount of the insulating resin layer directly above the conductive particles is higher than that of the insulating resin layer directly above the conductive particles. The surface is less when it lies in this tangent plane. 如申請專利範圍第17項之連接構造體之製造方法,其中,對隔著異向性導電膜而載置於第3電子零件上之第1電子零件及第2電子零件,自該第1電子零件及第2電子零件之側利用加壓工具進行壓接。 The method for producing a connecting structure of claim 17, wherein the first electronic component and the second electronic component mounted on the third electronic component via the anisotropic conductive film are separated from the first electronic component. The side of the component and the second electronic component is crimped with a press tool. 如申請專利範圍第17項之連接構造體之製造方法,其中,對第1電子零件及第2電子零件同時進行壓接。 The method for producing a connecting structure of claim 17, wherein the first electronic component and the second electronic component are simultaneously crimped.
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