TWI760111B - Bottom and middle edge rings - Google Patents

Abstract

A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respective lift pins for raising and lowering the edge ring.

Description

Bottom and middle edge rings

The present disclosure relates to movable edge rings in substrate processing systems. Cross-references to related applications

The present disclosure is related to the subject matter of application related to International Application PCT/US2017/043527 filed on July 24, 2017. The entire disclosure of the above-mentioned application is hereby incorporated by reference into the present disclosure.

The background introduction provided herein is for the purpose of generally presenting the context of the present disclosure. The work of the presently named inventors, to the extent described in this prior art section, and implementations that may not otherwise qualify as a description of the prior art at the time of filing, are not expressly or implicitly acknowledged as a basis for the present disclosure Content prior art.

Substrate processing systems may be used to process substrates such as semiconductor wafers. Exemplary processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and/or other etching, deposition, or cleaning processes. The substrate may be disposed on a substrate support, such as a susceptor, electrostatic chuck (ESC), etc., in a processing chamber of a substrate processing system. During etching, a gas mixture containing one or more precursors can be introduced into the processing chamber, and the plasma can be used to initiate chemical reactions.

The substrate support may include a ceramic layer configured to support the wafer. For example, wafers can be clamped to ceramic layers during processing. The substrate support may include an edge ring disposed around the exterior of the substrate support (eg, outside and/or adjacent to the perimeter). The edge ring may be configured to confine the plasma to the volume above the substrate, protect the substrate support from corrosion due to the plasma and the like.

The bottom ring system is configured to support the movable edge ring. The edge ring is configured to be raised and lowered relative to the substrate support. The bottom ring includes a stepped upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels extending from the lower surface of the bottom ring through the bottom ring to the upper surface of the bottom ring. set up. Each of the guide channels includes a first region having a smaller diameter than the guide channels, and the guide channels are configured to accommodate individual lift pins for raising and lowering the edge ring.

In other features, the diameter of the guide channel is between 0.063" and 0.067". Each of the guide channels includes cavities on the lower surface of the bottom ring, wherein the cavities have a larger diameter than the guide channels. The transition region between the guide channel and the cavity is chamfered. The chamfered transition zone has a height and width of between 0.020" and 0.035", and an angle of between 40 ^° and 50 ^° . The inner diameter of the steps in the upper surface shall be at least 13.0".

In other features, the bottom ring includes guide features extending upwardly from the upper surface of the bottom ring. The guide channel passes through the guide feature. The guide feature includes a first region of the guide channel. The upper surface includes an inner annular edge, and wherein the guide features and the inner annular edge define a groove. The height of the guide feature is greater than the height of the inner annular edge. At least one of the first upper corner and the second upper corner of the guide feature is chamfered. The upper surface includes an inner annular edge and an outer annular edge, wherein the guiding feature and the inner annular edge define a first groove, and wherein the guiding feature and the outer annular edge define a second groove.

In other features, the upper surface includes at least two directional changes. The upper surface contains at least five directional changes. The upper surface contains at least five alternating vertical and horizontal paths. The bottom ring has a first outer diameter and a second outer diameter larger than the first outer diameter. The bottom ring includes an annular lip extending radially outward from the outer diameter of the bottom ring. The lower surface includes a plurality of cavities that are configured to align with bolt holes in the bottom plate of the substrate support.

The middle ring system is disposed on the bottom ring and supports the movable edge ring. The edge ring is configured to be raised and lowered relative to the substrate support. The intermediate ring includes a stepped upper surface, an annular inner diameter, an annular outer diameter, a lower surface, a guide feature defining an annular outer diameter, an inner annular rim defining an annular inner diameter, and between the guiding feature and the inner annular edge grooves defined between.

In other features, at least one of the first upper corner and the second upper corner of the guide feature is chamfered. The middle ring is "U" shaped. The upper surface contains at least four directional changes. The upper surface contains at least five alternating vertical and horizontal paths.

Further areas of applicability of the present disclosure will become apparent from the embodiments, the scope of the invention, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.

A substrate support in a substrate processing system may include an edge ring. The upper surface of the edge ring may extend above the upper surface of the substrate support such that the upper surface of the substrate support (and in some examples, the upper surface of the substrate disposed on the substrate support) is concave relative to the edge ring. This recess may be referred to as a pocket. The distance between the upper surface of the edge ring and the upper surface of the substrate may be referred to as the "pocket depth". Typically, the pocket depth is fixed based on the height of the edge ring relative to the upper surface of the substrate.

Some aspects of the etch process may vary due to the characteristics of the substrate processing system, substrate, gas mixture, and the like. For example, the flow pattern and thus the etch rate and etch uniformity may depend on the pocket depth of the edge ring, the edge ring geometry (ie, shape), and factors including, but not limited to, gas flow rate, gas species, injection angle, injection location, etc. vary with other variables. Thus, varying the configuration of the edge ring (eg, including the edge ring height and/or geometry) can change the gas velocity distribution across the substrate surface.

Some substrate processing systems may implement movable (eg, adjustable) edge rings and/or replaceable edge rings. In one example, the height of the movable edge ring can be adjusted during processing to control etch uniformity. The edge ring may be coupled to an actuator configured to raise and lower the edge ring in response to a controller, user interface, or the like. In one example, the controller of the substrate processing system controls the height of the edge ring during processing, between processing steps, etc., according to the particular recipe being executed and the associated gas injection parameters. Additionally, edge rings and other elements may contain consumables that wear/corrode over time. Therefore, the height of the edge ring can be adjusted to compensate for corrosion. In other examples, the edge ring may be removable and replaceable (eg, to replace a corroded or damaged edge ring, to replace the edge ring with an edge ring having a different geometry, etc.). An example of a substrate processing system implementing a movable and replaceable edge ring can be found in US Patent Application Serial No. 14/705,430, filed May 6, 2015, the entire contents of which are hereby incorporated by reference into the present disclosure .

Substrate processing systems and methods in accordance with the principles of the present disclosure include a middle edge ring and a bottom edge ring configured to support a movable top edge ring.

Referring now to FIG. 1, an example substrate processing system 100 is shown. For example only, the substrate processing system 100 may be used to perform etching using RF plasma and/or other suitable substrate processing. The substrate processing system 100 includes a processing chamber 102 that surrounds other elements of the substrate processing system 100 and houses RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, the substrate 108 is disposed on the substrate support 106 . Although a particular substrate processing system 100 and chamber 102 are shown by way of example, the principles of the present disclosure may be applied to other types of substrate processing systems and chambers, such as in situ generation of plasma, implementation of remote plasma generation and delivery Substrate processing systems (eg using plasma tubes, microwave tubes), etc.

For example only, the upper electrode 104 may include a gas distribution device, such as a showerhead 109, that introduces and distributes a process gas (eg, an etching process gas). The showerhead 109 may include a stem including one end connected to the top surface of the processing chamber. The base is generally cylindrical and extends radially outwardly from opposite ends of the stem at a location spaced from the top surface of the processing chamber. The surface or panel of the base of the showerhead facing the substrate contains a plurality of holes through which the process gas or rinsing gas flows. Alternatively, the upper electrode 104 may comprise a conductive plate and the process gas may be introduced in another manner.

The substrate support 106 includes a conductive base plate 110 as a lower electrode. The bottom plate 110 supports the ceramic layer 112 . In some examples, the ceramic layer 112 may comprise a heating layer, such as a ceramic multi-zone heating plate. A thermal resistance layer 114 (eg, a bonding layer) may be disposed between the ceramic layer 112 and the base plate 110 . The base plate 110 may include one or more coolant passages 116 for flowing coolant through the base plate 110 .

The RF generation system 120 generates and outputs an RF voltage to one of the upper electrode 104 and the lower electrode (eg, the bottom plate 110 of the substrate support 106 ). The other of the top electrode 104 and the bottom plate 110 may be DC grounded, AC grounded, or floating. For example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage that is fed to the upper electrode 104 or the backplane 110 through a matching and distribution network 124 . In other examples, the plasma can be generated inductively or remotely. As shown for purposes of example, while the RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as, by way of example only: a transformer coupled plasmonic Plasma (TCP) system, CCP cathode system, remote microwave plasma generation and delivery system, etc.

Gas delivery system 130 includes one or more gas sources 132-1, 132-2, . . . , and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source supplies one or more gases (eg, etch gas, carrier gas, purge gas, etc.) and mixtures thereof. The gas source can also supply flushing gas. Gas source 132 is provided by valves 134-1, 134-2, . . . , and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, . Flow controller 136 ) is connected to manifold 140 . The output of manifold 140 is fed into process chamber 102 . For example only, the output of manifold 140 is fed to showerhead 109 .

The temperature controller 142 may be connected to a plurality of heating elements 144 , such as thermal control elements (TCEs) disposed in the ceramic layer 112 . For example, heating elements 144 may include, but are not limited to, macroscopic heating elements corresponding to each zone in a multi-zone heating plate, and/or an array of microscopic heating elements disposed across multiple zones of a multi-zone heating plate. The temperature controller 142 may be used to control the plurality of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108 .

A temperature controller 142 may communicate with the coolant assembly 146 to control the flow of coolant through the passages 116 . For example, the coolant assembly 146 may include a coolant pump and a sump. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the channels 116 to cool the substrate support 106 .

Valve 150 and pump 152 may be used to evacuate reactants from processing chamber 102 . System controller 160 may be used to control elements of substrate processing system 100 . Robot 170 may be used to deliver substrates onto and to remove substrates from substrate holder 106 . For example, the robot 170 may transfer substrates between the substrate holder 106 and the load lock 172 . Although shown as a separate controller, temperature controller 142 may be implemented within system controller 160 . In some examples, a protective seal 176 may be disposed around the perimeter of the bonding layer 114 between the ceramic layer 112 and the base plate 110 .

The substrate support 106 includes an edge ring 180 . The edge ring 180 may correspond to the top ring, which may be supported by the bottom ring 184 . As described in more detail below, in some examples, edge ring 180 may be further supported by one or more of an intermediate ring (not shown in FIG. 1 ), a stepped portion of ceramic layer 112 , and the like. The edge ring 180 is movable relative to the substrate 108 (eg, can be moved up and down in a vertical direction). For example, edge ring 180 may be controlled by actuators responsive to controller 160 . In some examples, edge ring 180 may be adjusted during substrate processing (ie, edge ring 180 may be an adjustable edge ring). In other examples, the edge ring 180 may be removable (eg, via the plenum using the robot 170 when the process chamber 102 is under vacuum). In yet other examples, edge ring 180 may be adjustable and removable.

Referring now to Figures 2A and 2B, an example substrate support 200 is shown having a substrate 204 disposed thereon. The substrate support 200 may include a base or base having an inner portion (eg, corresponding to an ESC) 208 and an outer portion 212 . In an example, the outer portion 212 may be independent of the inner portion 208 and movable relative to the inner portion 208 . For example, outer portion 212 may include bottom ring 216 and top edge ring 220 . Substrate 204 is disposed on inner portion 208 (eg, on ceramic layer 224) for processing. The controller 228 communicates with one or more actuators 232 to selectively raise and lower the edge ring 220 . For example, the edge ring 220 may be raised and/or lowered during processing to adjust the pocket depth of the standoff 200 . In another example, edge ring 220 may be raised to facilitate removal and replacement of edge ring 220 .

For example only, the edge ring 220 is shown in the fully lowered position in FIG. 2A and in the fully raised position in FIG. 2B . As shown, actuator 232 corresponds to a pin actuator configured to selectively extend and retract pin 236 in a vertical direction. Other suitable types of actuators may be used in other examples. For example only, the edge ring 220 corresponds to a ceramic or quartz edge ring, although other suitable materials (eg, silicon carbide, yttrium oxide, etc.) may be used. In FIG. 2A , controller 228 communicates with actuator 232 to raise and lower edge ring 220 directly via pin 236 . In some examples, inner portion 208 is movable relative to outer portion 212 .

Features of an example substrate support 300 are shown in more detail in Figures 3A and 3B. The substrate support 300 includes an insulator ring or plate 304 and a base plate (eg, the base plate of an ESC) 308 disposed on the insulator plate 304 . Bottom plate 308 supports a ceramic layer 312 that is configured to support a substrate 316 disposed thereon for processing. In Figure 3A, the ceramic layer 312 has a non-stepped configuration. In Figure 3B, the ceramic layer 312 has a stepped configuration. The substrate support 300 includes a bottom ring 320 that supports an upper (“top”) edge ring 324 . One or more through holes or guide channels 328 may be formed through insulator plate 304 , bottom ring 320 , and/or bottom plate 308 to receive individual lift pins 332 configured to selectively raise and lower edge ring 324 . For example, guide channels 328 serve as pin alignment holes for individual lift pins 332 . As shown in FIG. 3B , the substrate support 300 may further include an intermediate ring 336 disposed between the bottom ring 320 and the edge ring 324 . In the stepped configuration, the intermediate ring 336 overlaps the ceramic layer 312 and is configured to support the outer edge of the substrate 316 .

Lift pins 332 may include corrosion resistant materials such as sapphire. The outer surfaces of the lift pins 332 may be smoothly polished to reduce friction between the lift pins 332 and structural features of the bottom ring 320 to facilitate movement. In some examples, one or more ceramic sleeves 340 may be disposed in guide channels 328 around lift pins 332 . Each of the lift pins 332 may include a rounded upper end 344 to minimize the contact area between the upper end 344 and the edge ring 324 . The smooth outer surface, rounded upper end 344, guide channel 328, and/or ceramic sleeve 340 facilitate raising and lowering of edge ring 324 while preventing sticking of lift pins 332 during movement.

As shown in FIG. 3A , bottom ring 320 includes guide features 348 . In FIG. 3B , intermediate ring 336 includes guide features 348 . For example, the guide feature 348 corresponds to the raised annular edge 352 extending upwardly from the bottom ring 320/intermediate ring 336. In FIG. 3A , guide channels 328 and lift pins 332 extend through guide features 348 to engage edge ring 324 . Conversely, in FIG. 3B , guide channels 328 and lift pins 332 extend through bottom ring 320 to engage edge ring 324 but not through intermediate ring 336 .

Edge ring 324 includes an annular bottom groove 356 configured to receive guide feature 348 . For example, the profile (ie, cross-sectional) shape of edge ring 324 may generally correspond to a "U" shape configured to accommodate guide feature 348, although other suitable shapes may be used. Furthermore, while the upper surface of edge ring 324 is shown as being generally horizontal (ie, parallel to the upper surface of substrate support 300 ), in other examples, the upper surface of edge ring 324 may have a different profile. For example, the upper surface of edge ring 324 may be sloped or beveled, rounded, or the like. In some examples, the upper surface of edge ring 324 is sloped such that the thickness at the inner diameter of edge ring 324 is greater than the thickness at the outer diameter of edge ring 324 to compensate for corrosion at the inner diameter.

Thus, the bottom surface of edge ring 324 is configured to be complementary to the upper surface of bottom ring 320 in Figure 3A, or the respective surfaces of bottom ring 320 and middle ring 336 in Figure 3B. Furthermore, the interface 360 between the edge ring 324 and the bottom ring 320/intermediate ring 336 is complex. In other words, the lower surface of edge ring 324 and corresponding interface 360 includes multiple directional changes (eg, 90-degree directional changes, upward and downward steps, alternating horizontal and vertical orthogonal paths, etc.), rather than A direct (eg, line-of-sight) path to the internal structure of substrate support 300 is provided between edge ring 324 and bottom ring 320/intermediate ring 336 . In general, the potential for plasma and process material leakage may increase within substrate supports that include multiple interface rings, such as top edge ring 324 and one or more of middle ring 336 and bottom ring 320 . This possibility may be further increased when the movable edge ring 324 is raised during processing. Accordingly, the interface 360 (and in particular the contour of the edge ring 324 ) is configured to prevent process materials, plasma, etc. from reaching the internal structures of the substrate support 300 .

For example, as shown in FIG. 3A, interface 360 includes five directional changes to limit access to guide channels 328 and lift pins 332, ceramic layer 312, backside and edges of substrate 316, and the like. Conversely, as shown in FIG. 3B, interface 360 includes seven directional changes in first path 364 and five directional changes in second path 368 to limit access to guide channel 328 and lift pins 332, ceramic layers 312, backside and edges of substrate 316, vias for bonding layer 372, seal 376, etc. Thus, the interface 360 reduces the likelihood of plasma leakage and ignition, corrosion, etc. affecting the internal structure of the substrate support 300 .

The profile (ie, cross-section) shape of edge ring 324 (and the interface surfaces of bottom ring 320, intermediate ring 336, etc.) is designed to facilitate and reduce manufacturing costs. For example, the walls 380, 384 and guide features 348 of the groove 356 may be substantially vertical (eg, as compared to parabolic, trapezoidal, triangular, etc.) to facilitate fabrication while preventing leakage of plasma and process materials. By way of example only, substantially vertical may be defined as being perpendicular to the upper and/or lower surface of the edge ring 324, within 1° of the normal to the upper and/or lower surface of the edge ring 324, parallel to the direction of motion of the edge ring 324, etc. . Additionally, the vertical walls 380 , 384 maintain the alignment of the edge ring 324 relative to the guide features 348 during movement of the edge ring 324 . Conversely, when the individual profiles of grooves 356 and guide features 348 are parabolic, trapezoidal, triangular, etc., the upward movement of edge ring 324 results in significant separation between walls 380 and 384 .

The surfaces of edge ring 324 , bottom ring 320 , and middle ring 336 within interface 360 (and particularly within groove 356 ) are relatively smooth and continuous to allow edge ring 324 to guide and guide edge ring 324 during movement of edge ring 324 Friction between features 348 is minimized. For example, individual surfaces of edge ring 324, bottom ring 320, and middle ring 336 within interface 360 may undergo additional polishing to achieve a desired surface smoothness. In other examples, the surfaces of edge ring 324, bottom ring 320, and middle ring 336 within interface 360 may be coated with materials that further reduce friction. In yet other examples, the surfaces of edge ring 324 , bottom ring 320 , and middle ring 336 within interface 360 (and in particular edge ring 324 ) may be free of screw holes and/or similar component features. In this manner, particle generation due to surface-to-surface contact (eg, during movement of edge ring 324) may be minimized.

When the edge ring 324 is raised for adjustment during processing as described above, the controller 228 as described in FIGS. 2A and 2B is configured to limit the adjustable range of the edge ring 324 according to the height H of the guide feature 348 . For example, the adjustable range may be limited to be less than the height H of the guide feature 348 . For example, if the guide feature 348 has a height H of approximately 0.24" (eg, 0.22"-0.26"), the adjustable range of the edge ring 324 may be 0.25". In other words, the edge ring 324 can be raised from a fully lowered position (eg: 0.0") to a fully raised position ( Example: 0.25”). Thus, even in the fully raised position, edge ring 324 overlaps at least a portion of guide feature 348 . Limiting the extent of the edge ring 324 in this manner maintains the intricate interface 360 as described above and prevents lateral misalignment of the edge ring 324 . The depth of groove 356 may be approximately equal to height H of guide feature 348 (eg, within 5%). The depth of groove 356 may be at least 50% of the thickness of the edge ring. For example only, the adjustable range of the edge ring 324 of FIG. 3A is 0.15" to 0.25", and the adjustable range of the edge ring 324 of FIG. 3B is 0.05" to 0.15". For example, the thickness (ie, height) of edge ring 324 may be between about 0.50" (eg: 0.45" to 0.55") and about 0.6" (eg: 0.58" to 0.620"), and the depth of groove 356 Can be approximately 0.30" (eg: 0.29" to 0.31").

For example, "thickness" of edge ring 324 as used herein may mean the thickness of edge ring 324 at the inner diameter of edge ring 324 (eg, the thickness/height of edge ring 324 at inner wall 388). In some examples, the thickness of edge ring 324 may not be uniform across the entire upper surface of edge ring 324 (eg, the upper surface of edge ring 324 may be sloped as described above such that the thickness at inner wall 388 is greater than outside edge ring 324 thickness at diameter). However, since corrosion caused by exposure to plasma may increase relative to the outer diameter of edge ring 324 at inner wall 388 , edge ring 324 may be formed such that inner wall 388 has at least a predetermined thickness to compensate for the increase at inner wall 388 corrosion. For example only, the inner wall 388 is substantially vertical to avoid contact with the substrate 316 during movement of the edge ring 324 .

Referring now to Figures 4A, 4B, and 4C, another example substrate support 400 is shown in greater detail. The substrate support 400 includes an insulator ring or plate 404 and a bottom plate 408 disposed on the insulator plate 404 . Bottom plate 408 supports a ceramic layer 412 that is configured to support a substrate 416 disposed thereon for processing. In Figure 4A, the ceramic layer 412 has a non-stepped configuration. In Figures 4B and 4C, the ceramic layer 412 has a stepped configuration. The substrate support 400 includes a bottom ring 420 that supports an upper edge ring 424 . In the stepped configuration, edge ring 424 overlaps ceramic layer 412 . One or more through holes or guide channels 428 may be formed through insulator plate 404 , bottom ring 420 , and/or bottom plate 408 to receive individual lift pins 432 configured to selectively raise and lower edge ring 424 . For example, guide channels 428 serve as pin alignment holes for individual lift pins 432 .

In the example of FIGS. 4A , 4B, and 4C, edge ring 424 is configured to support the outer edge of substrate 416 disposed on ceramic layer 412 . For example, the inner diameter of edge ring 424 includes steps 434 configured to support the outer edge of substrate 416 . Thus, edge ring 424 may be raised and lowered to facilitate removal and replacement of edge ring 424, but may not be raised and lowered during processing (ie, edge ring 424 is not adjustable). For example, lift pins 432 can be used to raise edge ring 424 for removal and replacement (eg, using robot 170).

In one example, the lower inner corners 436 of the edge ring 424 may be chamfered to facilitate alignment (ie, centering) of the edge ring 424 on the substrate support 400 . Conversely, upper outer corners 444 and/or lower inner corners 448 of ceramic layer 412 may be chamfered complementary to corners 436 . Thus, when the edge ring 424 is lowered on the substrate support 400 , the chamfered corners 436 interact with the chamfered corners 444 / 448 to center the edge ring 424 itself on the substrate support 400 .

The upper outer corners 456 of the edge ring 424 may be chamfered to facilitate removal of the edge ring 424 from the processing chamber 102 . For example, since substrate support 400 is configured for in-situ removal of edge ring 424 (ie, without fully opening and venting process chamber 102 ), edge ring 424 is configured via a plenum remove. Typically, the size of the plenum is chosen to accommodate a substrate of predetermined size (eg, 300 mm). However, the edge ring 424 has a significantly larger diameter than the substrate 416 and a typical edge ring 424 may not fit through the plenum. Accordingly, the diameter of edge ring 424 is reduced (eg, compared to edge ring 324 shown in FIGS. 3A and 3B ). For example, the outer diameter of edge ring 324 is similar to the outer diameter of bottom ring 320 . Conversely, the outer diameter of edge ring 424 is significantly smaller than the outer diameter of bottom ring 420 . For example only, the outer diameter of the edge ring 424 is less than or equal to about 13" (eg: 12.5" to 13"). Chamfering the outer corners 456 further facilitates transfer of the edge ring 424 through the air chamber.

For example only, the chamfer of the outer corner may have a height of 0.050" to 0.070", a width of 0.030" to 0.050", and an angle of 25-35°. In some examples, the chamfer of the lower corner 436 may have a height of about 0.025" (eg: 0.015" to 0.040"), a width of about 0.015" (eg: 0.005" to 0.030"), and a width of about 60° (50 -70°) angle. For example only, the thickness (ie height) of the edge ring 424 is about but not greater than 0.275" (eg: 0.25" to 0.30"). For example, the thickness of the edge ring 424 may not exceed height to allow removal of edge ring 424. For example only, the "thickness" of edge ring 424 as used herein may mean the thickness of edge ring 424 at the inner diameter of edge ring 424 as described above with respect to Figures 3A and 3B Thickness (eg thickness/height of edge ring 424 at inner wall 458).

As shown in FIG. 4C , bottom ring 420 includes guide features 460 . For example, guide feature 460 corresponds to raised annular edge 464 extending upwardly from bottom ring 420 . Guide channels 428 and lift pins 432 extend through bottom ring 420 to engage edge ring 424 . Edge ring 424 includes an annular bottom groove 468 configured to receive guide feature 460 . For example, the contour of edge ring 424 may generally correspond to a "U" shape configured to accommodate guide feature 460 .

Thus, similar to the example of FIGS. 3A and 3B , the bottom surface of edge ring 424 in FIG. 4C is configured to complement the respective upper surfaces of bottom ring 420 and ceramic layer 412 to form intricate interface 472 . In other words, instead of providing a direct path between edge ring 424 and bottom ring 420 to the internal structure of substrate support 400 , interface 472 includes multiple directional changes (eg, 90-degree directional changes). In some examples, portions of guide features 460 , edge ring 424 , bottom ring 420 , and/or ceramic layer 412 within interface 472 may be chamfered to facilitate alignment of edge ring 424 on substrate support 400 ( center). For example, lower inner corners 476 of the inner diameter of edge ring 424 and corresponding lower inner corners 480 and/or upper outer corners 484 of ceramic layer 412 are chamfered. In other examples, the mechanical alignment of the guide features 460 within the grooves 468 centers the edge ring 424 . In some examples, the chamfer of the lower corner 476 may have a height of about 0.025" (eg: 0.015" to 0.040"), a width of about 0.015" (eg: 0.005" to 0.030"), and a width of about 60° (eg: 0.005" to 0.030") : 50-60°) angle.

Referring now to Figures 5A and 5B, another example substrate support 500 is shown in greater detail. The substrate support 500 includes an insulator ring or plate 504 and a bottom plate 508 disposed on the insulator plate 504 . Bottom plate 508 supports a ceramic layer 512 that is configured to support a substrate 516 disposed thereon for processing. In Figure 5A, the ceramic layer 512 has a non-stepped configuration. In Figure 5B, the ceramic layer 512 has a stepped configuration. The substrate support 500 includes a bottom ring 520 that supports an upper edge ring 524 (shown in FIG. 5A ) or an upper edge ring 526 (shown in FIG. 5B ). One or more through holes or guide channels 528 may be formed through insulator plate 504, bottom ring 520, and/or bottom plate 508 to accommodate individual lift pins configured to selectively raise and lower edge rings 524/526 532. For example, guide channels 528 serve as pin alignment holes for individual lift pins 532 . As shown in FIG. 5B , the substrate support 500 may further include an intermediate ring 536 disposed between the bottom ring 520 and the edge ring 526 . In the stepped configuration, the intermediate ring 536 overlaps the ceramic layer 512 and is configured to support the outer edge of the substrate 516 .

The example of Figures 5A and 5B combines the features of the adjustable edge ring 324 of Figures 3A and 3B and the removable/replaceable edge ring of Figures 4A, 4B, and 4C. For example, even in the stepped configuration of FIG. 5B , edge ring 526 does not extend below and support substrate 516 . Thus, edge rings 524/526 can be raised and lowered during processing. For example only, the adjustable range of edge ring 524 of Figure 5A is 0.05" to 0.15", while the adjustable range of edge ring 526 of Figure 5B is 0.02" to 0.05". Additionally, the outer diameter of the edge rings 524/526 is reduced as described with respect to Figures 4A, 4B, and 4C to facilitate transfer of the edge rings 524/526 through the air chamber. Thus, edge rings 524/526 can be removed and replaced in situ as described above.

As shown in FIG. 5A , bottom ring 520 includes guide features 540 . In FIG. 5B , intermediate ring 536 includes guide features 540 . For example, the guide feature 540 corresponds to the raised annular edge 544 extending upwardly from the bottom ring 520/intermediate ring 536. In each of Figures 5A and 5B, guide channels 528 and lift pins 532 extend through bottom ring 520 to engage edge rings 524/526. For example, edge rings 524 / 526 include annular bottom grooves 548 configured to receive guide features 540 . For example, the contours of edge rings 524 / 526 may generally correspond to a "U" shape configured to accommodate guide feature 540 .

Thus, similar to the example of FIGS. 3A , 3B and 4C , the bottom surfaces of edge rings 524 / 526 are configured to complement the respective upper surfaces of bottom ring 520 and middle ring 536 to form intricate interface 552 . In other words, instead of providing a direct path between the edge rings 524/526 and the bottom ring 520 to the internal structure of the substrate support 500, the interface 552 includes multiple directional changes (eg, 90 degree directional changes). In some examples, portions of guide features 540 , edge rings 524 / 526 , bottom ring 520 , and/or middle ring 536 within interface 552 may be chamfered to facilitate edge rings 524 / 526 on substrate support 500 alignment (ie, centering). For example, in FIG. 5A, corners 556 and 558 of edge ring 524 and complementary corner 560 of guide feature 540 and corner 562 of bottom ring 520 are chamfered. In contrast, in Figure 5B, only the corners 556 of the edge ring 526 and the corners 560 of the middle ring 536 are chamfered. The upper outer corners 564 of the edge ring 524 may be chamfered to facilitate removal of the edge ring 524 from the processing chamber 102 as described above with respect to Figures 4A, 4B and 4C.

For example only, the chamfers of the lower corners 556 and 558 may have a height and width of approximately 0.005" to 0.030" and an angle of approximately 25 to 35°. For example, the thickness (ie height) of the edge rings 524/526 may be about but not greater than 0.25" (eg: 0.25" to 0.26"), and the depth of the grooves 548 may be 0.200" to 0.220". The edge ring 524 The difference between the thickness of /526 and the depth of groove 548 may be no less than 0.075". For example, the thickness of the edge rings 524/526 may not exceed the height of the plenum of the processing chamber 102 to allow removal of the edge rings 524/526. However, the thickness of the edge rings 524/526 can also be maximized without exceeding the height of the plenum to optimize the adjustability of the edge rings 524/526. In other words, as the edge rings 524/526 wear over time, the amount by which the edge rings 524/526 can be raised without needing to be replaced increases in proportion to the thickness of the edge rings 524/526. For example only, the "thickness" of the edge ring 524/526 as used herein may mean the edge ring 524/526 at the inner diameter of the edge ring 524/526 as described above with respect to Figures 3A, 3B, 4A, 4B and 4C thickness (eg thickness/height of edge ring 524/5264 at inner wall 568).

Referring now to FIGS. 6A and 6B , an example bottom ring 600 (eg, corresponding to any of bottom rings 320 , 420 , or 520 ) may implement a clocking feature to facilitate alignment of bottom ring 600 with insulator ring 604 . Bottom ring 600 includes a plurality of guide channels 608 configured to receive individual lift pins 612 extending through insulator ring 604 . Bottom ring 600 further includes one or more synchronization features, such as notches 616 . Notches 616 are configured to accommodate complementary structures, such as protrusions 620 extending upwardly from insulator ring 604 . Accordingly, the bottom ring 600 can be installed such that the notches 616 align with and receive the protrusions 620 to ensure that the guide channels 608 are aligned with individual ones of the lift pins 612 .

7A, 7B, and 7C, substrate support 700 includes example bottom rings 704, 708, and 712 arranged to support a top movable edge ring in a non-stepped configuration in accordance with the principles of the present disclosure. For example, as shown in Figure 7A, bottom ring 704 is configured to support edge ring 324 of Figure 3A. As shown in Figure 7B, the bottom ring 708 is configured to support the edge ring 424 of Figure 4A. As shown in Figure 7C, the bottom ring 712 is configured to support the edge ring 524 of Figure 5A. The respective upper surfaces of each of the bottom rings 704, 708, and 712 are stepped. In other words, each of the individual upper surfaces has at least two different heights.

The substrate support 700 includes an insulator ring or plate 716 and a bottom plate (eg, the bottom plate of an ESC) 720 disposed on the insulator plate 716 . Bottom plate 720 supports a ceramic layer 724 that is configured to support the substrate thereon for processing. One or more through holes or guide channels 728 may be formed through the insulator plate 716 and bottom rings 704, 708, 712 to accommodate lift pins 732 configured to selectively raise and lower individual edge rings. For example, guide channels 728 serve as pin alignment holes for individual lift pins 732 . The clearance between lift pin 732 and the inner surface of guide channel 728 is minimized to reduce plasma leakage. In other words, the diameter of the guide channel 728 is only slightly larger than the diameter of the lift pin 732 (eg, 0.005"-0.010" larger). For example, lift pin 732 may have a diameter of 0.057"-0.061", while guide channel 728 may have a diameter of 0.063"-0.067". In some examples, guide channel 728 includes a narrow region 734 having a smaller diameter than the rest of guide channel 728 to further limit plasma leakage. For example, the narrow region 734 may have a diameter that is 0.002-0.004" smaller than the diameter of the guide channel 728 . Similarly, in some examples, the lift pin 732 may include a narrow region within the narrow region 734 of the guide channel 728 . area.

As shown in FIG. 7A , bottom ring 704 includes guide features 736 . For example, guide feature 736 corresponds to raised annular edge 740 extending upwardly from bottom ring 704 . Edge 740 and inner annular edge 742 define groove 744 . Guide channel 728 and lift pin 732 extend through guide feature 736 . The upper surface of the bottom ring 704 is configured to be complementary to the bottom surface of the edge ring 324 to form an intricate interface including multiple directional changes as described above. The respective widths of groove 744 and edge 740 are selected to minimize the gap between the respective vertical surfaces of groove 744 and edge 740 and the complementary vertical surface on the bottom of edge ring 324 . For example, the gap may be less than 0.02".

Similarly, as shown in FIG. 7C , bottom ring 712 includes guide features 746 . For example, guide feature 746 corresponds to raised annular edge 748 extending upwardly from bottom ring 712 . Edge 748 and inner annular edge 750 define a first groove 752 , while edge 748 and outer annular edge 754 define a second groove 756 . Guide channels 728 and lift pins 732 extend through bottom ring 712 . The upper surface of the bottom ring 712 is configured to be complementary to the bottom surface of the edge ring 524 to form an intricate interface including multiple directional changes as described above. The height of edge 748 is greater than the height of inner annular edge 750 to facilitate engagement of edge 748 with edge ring 524 prior to contact between inner annular edge 750 and edge ring 524 .

In some examples, portions of guide features 746 and/or bottom ring 712 may be chamfered to facilitate alignment (ie, centering) of edge ring 524 on substrate support 700 . For example, corners 760 and 764 of guide feature 746 and corner 768 of bottom ring 712 are chamfered. In some examples, the chamfers of the corners 760 may have a height and width of at least about 0.008" (eg: 0.007" to 0.011") and an angle of 15-25°. The chamfers of the corners 764 may have at least about 0.01" (Example: 0.01” to 0.02”) Height and width and angle of 20-35°. The chamfers of the corners 768 may have a height and width of at least about 0.010" (eg, 0.010" to 0.030") and an angle of 20-35°.

The inner diameter of the bottom rings 704, 708 and 712 may be at least 11.5" (eg, between 11.5" and 11.7"). The outer diameter of the bottom rings 704, 708 and 712 may be no greater than 14" (eg, between 13.8" and 14.1"). "between). The stepped inner diameters of the bottom rings 708 and 712 at 772 are selected to accommodate the outer diameter of the edge rings 424 or 524 . For example, the outer diameter of edge ring 424 or 524 may be approximately 12.8" (eg, +/- 0.10"). Thus, the inner diameter of the bottom rings 708 and 712 at 772 may be at least 13.0".

8A, 8B, and 8C, substrate support 800 includes example bottom rings 804, 808, and 812 arranged to support a top movable edge ring in a stepped configuration in accordance with the principles of the present disclosure. For example, as shown in Figure 8A, bottom ring 804 is configured to support edge ring 324 of Figure 3B. As shown in Figure 8B, the bottom ring 808 is configured to support the edge ring 424 of Figure 4C. As shown in Figure 8C, the bottom ring 812 is configured to support the edge ring 526 of Figure 5B. Bottom rings 804 and 812 may be further configured to support middle ring 336 of Figure 3B and middle ring 536 of Figure 5B, respectively. The respective upper surfaces of each of the bottom rings 804, 808, and 812 are stepped. In other words, each of the individual upper surfaces has at least two different heights.

The substrate support 800 includes an insulator ring or plate 816 and a backplane (eg, the backplane of an ESC) 820 disposed on the insulator plate 816 . Bottom plate 820 supports a ceramic layer 824 that is configured to support a substrate thereon for processing. Bonding layer 828 may be disposed between base plate 820 and ceramic layer 824 with seal 832 surrounding bonding layer 828 . One or more through holes or guide channels 836 may be formed through the insulator plate 816 and bottom rings 804, 808, 812 to accommodate lift pins 840 configured to selectively raise and lower individual edge rings. For example, guide channels 836 serve as pin alignment holes for individual lift pins 840 . The clearance between lift pin 840 and the inner surface of guide channel 836 is minimized to reduce plasma leakage. In other words, the diameter of the guide channel 836 is only slightly larger than the diameter of the lift pin 840 (eg, 0.005"-0.010" larger). For example, lift pin 840 may have a diameter of 0.1", while guide channel 836 has a diameter of 0.105". In some examples, guide channel 836 includes a narrow region 842 having a smaller diameter than the rest of guide channel 836 to further limit plasma leakage. For example, the narrow region 842 may have a diameter that is 0.002-0.004" smaller than the diameter of the guide channel 836 . In some examples, one or more ceramic sleeves 844 may be disposed within the guide channel 836 surrounding the lift pin 840 . .

As shown in FIG. 8B , bottom ring 808 includes guide features 846 . For example, guide feature 846 corresponds to raised annular edge 848 extending upwardly from bottom ring 808 . Edge 848 and outer annular edge 850 define groove 852 . The upper surface of bottom ring 808 is configured to be complementary to the bottom surface of edge ring 424 to form an intricate interface including multiple directional changes as described above. The respective widths of groove 852 and edge 848 are selected to minimize the gap between the respective vertical surfaces of groove 852 and edge 848 and the complementary vertical surface on the bottom of edge ring 424 . For example, the gap may be less than 0.010". Conversely, as shown in Figures 8A and 8C, bottom rings 804 and 812 are configured to support intermediate rings 336 and 536 with respective guide features 348 and 540. Thus, , the upper surfaces of bottom rings 804 and 812 are configured to join the upper surfaces of intermediate rings 336 and 536 complementary to the bottom surfaces of edge rings 324 and 526 to form an intricate interface including multiple directional changes as described above.

Bottom rings 804 , 808 , and 812 may be configured to receive ceramic sleeve 844 in examples where guide channel 836 includes ceramic sleeve 844 (eg, where guide channel 836 is routed through base plate 820 ). For example, bottom rings 804 , 808 , and 812 may include clearance features, such as a cavity or cutout 856 having a larger diameter than guide channel 836 , to accommodate the upper end of ceramic sleeve 844 . In some examples, bottom rings 804 , 808 , and 812 may be installed after lift pins 840 . Accordingly, individual openings in bottom rings 804 , 808 , and 812 may include chamfered edges 860 to facilitate installation of bottom rings 804 , 808 , and 812 on lift pins 840 . For example, the chamfer of edge 860 may have a height and width of 0.020" to 0.035" and an angle of 40-50°.

As shown in Figures 8B and 8C, the stepped inner diameters of bottom rings 808 and 812 at 862 are selected to accommodate the outer diameters of edge ring 424 of Figure 4C and edge ring 526 of Figure 5B. For example, the outer diameter of edge rings 424 and 526 may be approximately 12.8" (eg, +/- 0.10"). Thus, the inner diameter of the bottom rings 808 and 812 at 862 may be at least 13.0". Thus, the gap between the bottom rings 808 and 812 and the outer diameters of the edge rings 424 and 526 may be minimized while still preventing the bottom ring Contact between the vertical surfaces of 808 and 812 and edge rings 424 and 526.

In some examples, as shown in FIG. 8B , the bottom ring 808 may include a first outer diameter at 864 and a second outer diameter at 868 . The second outer diameter at 868 is greater than the first outer diameter at 864 . For example, substrate support 800 may include gaskets 872 that protect outer portions of insulator plate 816, bottom plate 820, bottom ring 808, and the like. However, the liner 872 may not protect the upper portion of the bottom ring 808 exposed to the plasma, and increased corrosion of the bottom ring 808 may occur in the area adjacent to the upper edge 876 of the bottom plate 820 (as indicated by the dashed arrow 880 ) . Therefore, the bottom ring 808 contains additional material at the second outer diameter 868 to compensate for the increased corrosion.

Referring now to FIG. 9, an example intermediate ring 900 is shown. The intermediate ring 900 may be provided in a configuration in which the top edge ring is otherwise supported by the upper surfaces of two distinct parts of the substrate support. For example, as shown in Figures 3B and 5B (corresponding to Figures 8A and 8C, respectively), the top edge ring overlaps the respective ceramic layer and the respective bottom ring. Thus, the middle ring 900 is configured to support a portion of the top edge ring that is otherwise supported by the ceramic layer. As shown, the intermediate ring 900 is "U" shaped.

Intermediate ring 900 includes inner annular edge 904 and outer annular edge 908 that define groove 912 . Grooves 912 are configured to receive individual top edge rings (eg, edge rings 324 or 526). Instead, the outer annular edge 908 acts as a guide feature to center the top edge ring 324 or 526 during replacement as described above in Figures 3B and 5B. In some examples, corners 916 and 920 are chamfered to facilitate engagement with the top edge ring. For example, the chamfered corners of the corners 916 may have a height and width of at least about 0.010" (eg, 0.005" to 0.015") and an angle of about 20° (eg, 15-25°). The chamfered corners of the corners 920 may be Have a height and width of at least about 0.015" (eg: 0.010" to 0.020") and an angle of about 30° (eg 25-35 ^° ). The width of the outer annular edge 908 is selected to minimize the gap between the individual vertical surfaces of the outer annular edge 908 and the complementary vertical surfaces on the bottom of the edge ring 324 or 526 . For example, the gap can be less than 0.010" to limit plasma leakage.

10A and 10B, two cross-sectional views of a substrate support 1000 depict a bottom ring 1004 arranged to support a top movable edge ring in a stepped configuration in accordance with the principles of the present disclosure. For example, the bottom ring 1004 is configured to support an edge ring (eg, 526) in a configuration similar to that shown in Figures 5B and 8C. The bottom ring 1004 may be further configured to support the middle ring in a configuration similar to that shown in Figure 5B.

The substrate support 1000 includes an insulator ring or plate 1008 and a backplane (eg, the backplane of an ESC) 1012 disposed on the insulator plate 1008 . Bottom plate 1012 supports a ceramic layer 1016 that is configured to support a substrate thereon for processing. The bonding layer 1020 may be disposed between the base plate 1012 and the ceramic layer 1016 , and the sealing member 1024 surrounds the bonding layer 1020 . As shown in Figure 10A, one or more through holes or guide channels 1028 may be formed through the insulator plate 1008, the bottom plate 1012, and the bottom ring 1004 to accommodate lift pins configured to selectively raise and lower the edge ring 1032. For example, guide channels 1028 serve as pin alignment holes for individual lift pins 1032. The clearance between lift pin 1032 and the inner surface of guide channel 1028 is minimized to reduce plasma leakage. In other words, the diameter of the guide channel 1028 is only slightly larger than the diameter of the lift pin 1032 (eg, 0.005"-0.010" larger). For example, lift pin 1032 may have a diameter of 0.1", while guide channel 1028 may have a diameter of 0.105". In some examples, guide channel 1028 includes a narrow region 1036 having a smaller diameter than other portions of guide channel 1028 to further limit plasma leakage. For example, the narrow region 1036 may have a diameter that is 0.002-0.004" smaller than the diameter of the guide channel 1028 . In some examples, one or more ceramic sleeves 1040 may be disposed within the guide channel 1028 surrounding the lift pin 1032 .

The substrate support 1000 may include a gasket 1044 that is configured to surround and protect the elements of the substrate support 1000 , such as the insulator plate 1008 , the bottom plate 1012 , and the bottom ring 1004 . The bottom ring 1004 as shown in FIGS. 10A and 10B includes an annular lip 1048 extending radially outward from the bottom ring 1004 on the gasket 1044 . Lip 1048 facilitates installation and removal of bottom ring 1004 when liner 1044 is present.

As shown in FIG. 10B , the base plate 1012 may be coupled to the insulator plate 1008 using bolts 1052 inserted into individual bolt mounting holes 1056 . Ceramic plugs 1060 are disposed on the bolts 1052 to prevent plasma leakage in the bolt mounting holes 1056 and between the bottom ring 1004 and the bottom plate 1012 . Bottom ring 1004 as shown in FIG. 10B includes clearance features, such as cavities or cutouts 1064 to accommodate ceramic plugs 1060 .

The foregoing is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of ways. Thus, although this disclosure contains specific examples, the true scope of this disclosure should not be so limited, as other variations will become apparent after a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Furthermore, although various embodiments are described above as having certain features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in combination with the features of any other embodiment, even if combined Nor is it explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments for each other remain within the scope of this disclosure.

The spatial and functional relationships between components (eg, modules, circuit elements, semiconductor layers, etc.) are described using a number of terms including: "connected", "bonded", "coupled", "adjacent", "next to" , "above", "above", "below", and "configure". When a relationship between first and second elements is described in the above disclosure, unless expressly described as "direct," the relationship can be direct, with no other intervening elements present between the first and second elements. Between the second elements, but also an indirect relationship, wherein one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be understood to mean a logical (A or B or C) using a non-exclusive logical "or," and should not be understood to mean " At least one of A, at least one of B, and at least one of C".

In some implementations, the controller is part of a system, which may be part of the above example. Such systems may include semiconductor processing equipment including a processing tool or tools, a chamber or chambers, a platform or platforms for processing, and/or specific processing elements (wafer pedestals, gas flow systems, etc.) . These systems may be integrated with electronic equipment used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. Electronic devices may be referred to as "controllers" that control elements or subsections of a system or systems. Depending on the processing needs and/or type of system, the controller may be programmed to control any of the processes disclosed herein, including: delivery of process gases, temperature settings (eg, heating and/or cooling), pressure settings, vacuum settings, power settings , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, location and operation settings, access to a tool and other transfer tools and/or load locks for connection or interface with specific systems Department of Wafer Transfer.

Broadly speaking, a controller can be defined as an electronic device having numerous integrated circuits, logic, memory, and/or software that receive commands, issue commands, control operations, enable cleaning operations, enable endpoint measurements, and the like. An integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application-specific integrated circuit (ASIC), and/or one or more chips that execute program instructions (eg, software). Multiple microprocessors or microcontrollers. Program commands may be commands that communicate with a controller in the form of individual settings (or program files) that define operating parameters for a semiconductor wafer or system to perform a particular process. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer for one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or crystals One or more processing steps are completed during die fabrication of the circle.

In some embodiments, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination of the above. For example, the controller may be a whole or part of a host computer system in the "cloud" or fab, allowing remote access to wafer processing. The computer may allow remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, to change the parameters of the current process, to set the current operation after the current operation. process steps, or start a new process. In some examples, a remote computer (eg, a server) may provide recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and/or settings, which are then passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data that explicitly specifies parameters for various processing steps to be performed during one or more operations. It should be understood that parameters may be specific to the type of process to be performed and the type of tool to which the controller is interfaced or controlled by the configuration. Thus, as described above, a controller may be distributed, such as by including one or more distributed controllers linked together by a network and directed toward a common purpose (such as the process and control described herein) Operation. An example of a distributed controller for such purposes would be one or more integrated circuits in a chamber that communicate with one or more circuits located remotely (such as at the platform level or as part of a remote computer). The bulk circuit is combined to control the process in the chamber.

Without limitation, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin-rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, Bevel Etching Chamber or Module, Physical Vapor Deposition (PVD) Chamber or Module, Chemical Vapor Deposition (CVD) Chamber or Module, Atomic Layer Deposition (ALD) Chamber or Module, Atomic Layer Etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing system that may be associated or used in the fabrication and/or production of semiconductor wafers.

As mentioned above, depending on the process step or process steps to be performed by the tool, the controller may communicate with more than one of the following: other tool circuits or modules, other tool components, group tools, other tool interfaces, adjacent tools, phase Adjacent tools, tools located throughout the fab, host computer, another controller, or tools for material transfer that carry containers of wafers into and out of tool locations within a semiconductor production fab and/or or load side.

The foregoing is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of ways. Thus, although this disclosure contains specific examples, the true scope of this disclosure should not be so limited, as other variations will become apparent after a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Furthermore, although various embodiments are described above as having certain features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in combination with the features of any other embodiment, even if combined Nor is it explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments for each other remain within the scope of this disclosure.

The spatial and functional relationships between components (eg, modules, circuit elements, semiconductor layers, etc.) are described using a number of terms including: "connected", "bonded", "coupled", "adjacent", "next to" , "above", "above", "below", and "configure". When a relationship between first and second elements is described in the above disclosure, unless expressly described as "direct," the relationship can be direct, with no other intervening elements present between the first and second elements. Between the second elements, but also an indirect relationship, wherein one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be understood to mean a logical (A or B or C) using a non-exclusive logical "or," and should not be understood to mean " At least one of A, at least one of B, and at least one of C".

In some implementations, the controller is part of a system, which may be part of the above example. Such systems may include semiconductor processing equipment including a processing tool or tools, a chamber or chambers, a platform or platforms for processing, and/or specific processing elements (wafer pedestals, gas flow systems, etc.) . These systems may be integrated with electronic equipment used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. Electronic devices may be referred to as "controllers" that control elements or subsections of a system or systems. Depending on the processing needs and/or type of system, the controller may be programmed to control any of the processes disclosed herein, including: delivery of process gases, temperature settings (eg, heating and/or cooling), pressure settings, vacuum settings, power settings , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, location and operation settings, access to a tool and other transfer tools and/or load locks for connection or interface with specific systems Department of Wafer Transfer.

Broadly speaking, a controller can be defined as an electronic device having numerous integrated circuits, logic, memory, and/or software that receive commands, issue commands, control operations, enable cleaning operations, enable endpoint measurements, and the like. An integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application-specific integrated circuit (ASIC), and/or one or more chips that execute program instructions (eg, software). Multiple microprocessors or microcontrollers. Program commands may be commands that communicate with a controller in the form of individual settings (or program files) that define operating parameters for a semiconductor wafer or system to perform a particular process. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer for one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or crystals One or more processing steps are completed during die fabrication of the circle.

In some embodiments, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination of the above. For example, the controller may be a whole or part of a host computer system in the "cloud" or fab, allowing remote access to wafer processing. The computer may allow remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, to change the parameters of the current process, to set the current operation after the current operation. process steps, or start a new process. In some examples, a remote computer (eg, a server) may provide recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and/or settings, which are then passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data that explicitly specifies parameters for various processing steps to be performed during one or more operations. It should be understood that parameters may be specific to the type of process to be performed and the type of tool to which the controller is interfaced or controlled by the configuration. Thus, as described above, a controller may be distributed, such as by including one or more distributed controllers linked together by a network and directed toward a common purpose (such as the process and control described herein) Operation. An example of a distributed controller for such purposes would be one or more integrated circuits in a chamber that communicate with one or more circuits located remotely (such as at the platform level or as part of a remote computer). The bulk circuit is combined to control the process in the chamber.

Without limitation, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin-rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, Bevel Etching Chamber or Module, Physical Vapor Deposition (PVD) Chamber or Module, Chemical Vapor Deposition (CVD) Chamber or Module, Atomic Layer Deposition (ALD) Chamber or Module, Atomic Layer Etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing system that may be associated or used in the fabrication and/or production of semiconductor wafers.

As mentioned above, depending on the process step or process steps to be performed by the tool, the controller may communicate with more than one of the following: other tool circuits or modules, other tool components, group tools, other tool interfaces, adjacent tools, phase Adjacent tools, tools located throughout the fab, host computer, another controller, or tools for material transfer that carry containers of wafers into and out of tool locations within a semiconductor production fab and/or or load side.

100: Substrate Handling Systems 102: Chamber 104: Upper electrode 106: Substrate support 108: Substrate 109: Sprinkler 110: Bottom plate 112: Ceramic layer 114: Thermal resistance layer (bonding layer) 116: Channel 120: RF Generation System 122: RF Voltage Generator 124: Match and assign nets 130: Gas Delivery Systems 132: Gas source 134: Valve 136: Mass Flow Controller 140: Manifold 142: Temperature Controller 144: Heating element 146: Coolant components 150: Valve 152: Pump 160: Controller 170: Robot 172: Load Lock 176: Seals 180: Edge Ring 184: Bottom Ring 200: Support 204: Substrate 208: Internal Section 212: External Section 216: Bottom Ring 220: Edge Ring 224: Ceramic Layer 228: Controller 232: Actuator 236: Pin 300: Substrate support 304: Insulator plate 308: Bottom Plate 312: Ceramic Layer 316: Substrate 320: Bottom Ring 324: Edge Ring 328: Guide channel 332: Lifting pin 336: Intermediate Ring 340: Ceramic Sleeve 344: Top 348: Guide Features 352: Ring Edge 356: Groove 360: Interface 364: First Path 368: Second Path 372: Bonding Layer 376: Seals 380: Wall 384: Wall 388: Inner Wall 400: Substrate support 404: Insulator plate 408: Bottom Plate 412: Ceramic Layer 416: Substrate 420: Bottom Ring 424: Edge Ring 428: Guide channel 432: Lifting pin 434: Steps 436: Corner 444: Corner 448: Corner 456: Corner 458: Inner Wall 460: Guide Features 464: Ring Edge 468: Groove 472: Interface 476: Corner 480: Corner 484: Corner 500: Substrate support 504: Insulator plate 508: Bottom Plate 512: Ceramic Layer 516: Substrate 520: Bottom Ring 524: Edge Ring 526: Edge Ring 528: Guide channel 532: Lifting pin 536: Intermediate Ring 540: Guide feature 544: Ring Edge 548: Groove 552: Interface 556: Corner 558: Corner 560: Corner 562: Corner 564: Corner 568: Inner Wall 600: Bottom Ring 604: Insulator Ring 608: Guide channel 612: Lifting pin 616: Grooving 620: Overhang 700: Substrate support 704: Bottom Ring 708: Bottom Ring 712: Bottom Ring 716: Insulator plate 720: Bottom plate 724: Ceramic Layer 728: Guide Channel 732: Lift Pin 734: Narrow area 736: Guide Features 740: Edge 742: Inner Ring Edge 744: Groove 746: Guide Features 748: Edge 750: Inner annular edge 752: First groove 754: Outer Ring Edge 756: Second groove 760: Corner 764: Corner 768: Corner 800: Substrate support 804: Bottom Ring 808: Bottom Ring 812: Bottom Ring 816: Insulator plate 820: Bottom plate 824: Ceramic Layer 828: Bonding Layer 832: Seals 836: Guide channel 840: Lifting pin 842: Narrow area 844: Ceramic Sleeve 846: Guide feature 848: Edge 850: Outer annular edge 852: Groove 856: Cut 860: Edge 872: Padding 876: top edge 880: Dotted Arrow 900: Intermediate Ring 904: Inner Ring Edge 908: Outer annular edge 912: Groove 916: Corner 920: Corner 1000: Substrate support 1004: Bottom Ring 1008: Insulator plate 1012: Bottom Plate 1016: Ceramic Layer 1020: Bonding Layer 1024: Seals 1028: Guide Channel 1032: Lifting pin 1036: Narrow area 1040: Ceramic Sleeve 1044: Liner 1048: Lips 1052: Bolts 1056: Bolt mounting holes 1060: Ceramic Plug 1064: Cutout

The present disclosure can be more fully understood from the embodiments and accompanying drawings, in which:

1 is a functional block diagram of an example processing chamber in accordance with the present disclosure;

2A shows an exemplary movable edge ring in a lowered position according to the present disclosure;

2B shows an exemplary movable edge ring in a raised position according to the present disclosure;

3A shows a first example substrate support including a movable edge ring in accordance with the present disclosure;

3B shows a second example substrate support including a movable edge ring in accordance with the present disclosure;

4A shows a third example substrate support including a movable edge ring in accordance with the present disclosure;

4B shows a fourth example substrate support including a movable edge ring in accordance with the present disclosure;

4C shows a fifth example substrate support including a movable edge ring in accordance with the present disclosure;

5A shows a sixth example substrate support including a movable edge ring in accordance with the present disclosure;

5B shows a seventh example substrate support including a movable edge ring in accordance with the present disclosure;

6A shows a bottom view of an example bottom ring of a substrate holder in accordance with the present disclosure;

6B shows a clocking feature of a bottom ring of a substrate standoff according to the present disclosure;

7A shows a first example of a bottom ring configured to support a movable edge ring according to the present disclosure;

7B shows a second example of a bottom ring configured to support a movable edge ring according to the present disclosure;

7C shows a third example of a bottom ring configured to support a movable edge ring according to the present disclosure;

8A shows a fourth example of a bottom ring configured to support a movable edge ring according to the present disclosure;

8B shows a fifth example of a bottom ring configured to support a movable edge ring according to the present disclosure;

8C shows a sixth example of a bottom ring configured to support a movable edge ring according to the present disclosure;

9 shows an intermediate ring configured to support a movable edge ring in accordance with the present disclosure; and

10A and 10B show a seventh example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure.

In the drawings, reference numerals may be reused to identify similar and/or identical elements.

300: Substrate support

304: Insulator plate

308: Bottom Plate

312: Ceramic Layer

316: Substrate

320: Bottom Ring

324: Edge Ring

328: Guide channel

332: Lifting pin

344: Top

348: Guide Features

352: Ring Edge

356: Groove

360: Interface

380: Wall

384: Wall

388: Inner Wall

Claims (8)

An intermediate ring configured to be disposed over a bottom ring and support a movable edge ring, wherein the edge ring is configured to be raised and lowered relative to a substrate support, the intermediate ring comprising: an upper surface, wherein the upper surface an annular inner diameter; an annular outer diameter; a lower surface; a guide feature defining the annular outer diameter, wherein the first upper corner and the second upper corner of the guiding feature are at least one is chamfered to align and facilitate engagement with the movable edge ring; an inner annular edge defining the annular inner diameter; and defined between the guide feature and the A groove between inner annular edges, wherein the inner annular edge is stepped downward relative to the guide feature to support the edge of the substrate. The intermediate ring of claim 1, wherein the intermediate ring is configured to support the edge of the substrate. The intermediate ring of claim 1, wherein the at least one of the first upper corner and the second upper corner of the chamfered guide feature is an outer, upper corner of the guide feature. The intermediate ring of claim 1, wherein the intermediate ring is in a "U" shape. The intermediate ring of claim 1, wherein the cross-section of the intermediate ring has an upwardly open "U" shape. The intermediate ring of claim 1, wherein the upper surface includes at least four directional changes. The intermediate ring of claim 1, wherein the upper surface comprises at least five alternating vertical and horizontal surfaces. The intermediate ring of claim 1, wherein the first upper corner and the second upper corner of the guide feature are chamfered.

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