TWI759864B - Detection apparatus and light-receiving device thereof - Google Patents
Detection apparatus and light-receiving device thereof Download PDFInfo
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本發明涉及一種檢測設備,尤其涉及一種能夠同時檢測多個發光晶片的檢測設備及其收光裝置。 The present invention relates to a detection device, in particular to a detection device capable of simultaneously detecting a plurality of light-emitting wafers and a light-receiving device thereof.
用來檢測多個發光晶片的現有檢測設備,其是將多個所述發光晶片發出的光線總合當作單個面光源,而後依據所述面光源所推知的光參數總合在除以多個所述發光晶片的數量,以作為每個所述發光晶片的光參數。也就是說,現有檢測設備並無法在多個發光晶片之中,單獨檢測一個所述發光晶片的光參數。 Existing inspection equipment for detecting a plurality of light-emitting chips, which takes the sum of the light emitted by a plurality of the light-emitting chips as a single surface light source, and then divides the sum of the light parameters inferred according to the surface light source by a plurality of The number of the light-emitting wafers is used as the light parameter of each light-emitting wafer. That is to say, the existing detection equipment cannot individually detect the light parameters of one of the light-emitting wafers among the plurality of light-emitting wafers.
於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the inventor believes that the above-mentioned defects can be improved. Nate has devoted himself to research and application of scientific principles, and finally proposes an invention with reasonable design and effective improvement of the above-mentioned defects.
本發明實施例在於提供一種檢測設備及其收光裝置,能有效地改善現有檢測設備所可能產生的缺陷。 The embodiments of the present invention provide a detection device and a light-receiving device thereof, which can effectively improve the defects that may occur in the existing detection device.
本發明實施例公開一種檢測設備,其包括:一電性檢測裝置,包含:一探針卡;一光學對位模組,其位置對應於所述探針卡;一透光載盤,其位置與所述探針卡相對應,並且所述透光載盤具有用來承載多個發光晶片 的一承載面與位於所述承載面相反側的一出光面;其中,所述探針卡能通過所述光學對位模組的對位後,而用來同時供電且電性檢測所述透光載盤上的多個所述發光晶片,以使每個所述發光晶片朝向所述出光面發出具有第一發散角度的一第一光線;以及一收光裝置,其鄰近地設置於所述透光載盤的所述出光面,並且所述收光裝置包含有:一遠心透鏡組,其包含有一入光端及一出光端;其中,所述遠心透鏡組用來導引由所述出光面穿出而自所述入光端穿入其內的多個所述第一光線,並使多個所述第一光線自所述出光端穿出且形成多道第二光線;其中,每道所述第二光線的第二發散角度小於相對應所述第一光線的所述第一發散角度;一影像處理模組,其設置於所述遠心透鏡組的所述出光端,用來接收並處理自所述出光端穿出的每道所述第二光線,以計算出相對應的所述發光晶片的RGB灰階值;及一演算模組,其電性耦接於所述影像處理模組,用來接收每個所述發光晶片的所述RGB灰階值並演算出每個所述發光晶片的光參數。 The embodiment of the present invention discloses a detection device, which includes: an electrical detection device, including: a probe card; an optical alignment module, the position of which corresponds to the probe card; Corresponding to the probe card, and the light-transmitting carrier plate is used to carry a plurality of light-emitting wafers A bearing surface and a light emitting surface on the opposite side of the bearing surface; wherein, the probe card can be used to simultaneously supply power and electrically detect the transparent a plurality of the light-emitting chips on the optical carrier, so that each of the light-emitting chips emits a first light beam with a first divergence angle toward the light-emitting surface; and a light-receiving device disposed adjacent to the light-emitting surface The light-emitting surface of the light-transmitting carrier disc, and the light-receiving device includes: a telecentric lens group, which includes a light-incoming end and a light-emitting end; wherein, the telecentric lens group is used to guide the light from the light-emitting a plurality of the first rays of light that pass through the light-incident end and penetrate into it, and make the plurality of first rays pass through the light-emitting end to form a plurality of second rays; wherein, each The second divergence angle of the second light is smaller than the first divergence angle corresponding to the first light; an image processing module is disposed at the light-emitting end of the telecentric lens group for receiving and process each of the second light rays passing through the light-emitting end to calculate the corresponding RGB grayscale value of the light-emitting chip; and an arithmetic module electrically coupled to the image processing The module is used for receiving the RGB grayscale values of each of the light-emitting chips and calculating the light parameters of each of the light-emitting chips.
本發明實施例也公開一種檢測設備的收光裝置,其包括:一遠心透鏡組,其包含有一入光端及一出光端;其中,所述遠心透鏡組用來導引多個發光晶片所發出且自所述入光端穿入其內的多道第一光線,並使多個所述第一光線自所述出光端穿出且形成彼此不重疊的多道第二光線;其中,每道所述第二光線的第二發散角度小於相對應所述第一光線的第一發散角度;一影像處理模組,其設置於所述遠心透鏡組的所述出光端,用來接收並處理自所述出光端穿出的每道所述第二光線,以計算出相對應的所述發光晶片的RGB灰階值;以及一演算模組,其電性耦接於所述影像處理模組,用來接收每個所述發光晶片的所述RGB灰階值並演算出每個所述發光晶片的光參數。 The embodiment of the present invention also discloses a light receiving device of a detection device, which includes: a telecentric lens group, which includes a light entrance end and a light output end; wherein, the telecentric lens group is used to guide the light emitted by a plurality of light-emitting chips And a plurality of first rays penetrate into it from the light entrance end, and make a plurality of the first rays pass through the light exit end and form a plurality of second rays that do not overlap each other; wherein, each The second divergence angle of the second light is smaller than the first divergence angle corresponding to the first light; an image processing module, which is arranged at the light output end of the telecentric lens group, is used to receive and process the self Each of the second rays of light emitted from the light-emitting end is used to calculate the corresponding RGB grayscale value of the light-emitting chip; and an arithmetic module is electrically coupled to the image processing module, It is used to receive the RGB grayscale values of each of the light-emitting chips and calculate the light parameters of each of the light-emitting chips.
綜上所述,本發明實施例所公開的檢測設備及其收光裝置,通過在多個所述發光晶片的光線進入所述影像處理模組之前設置有所述遠心 透鏡組,以通過所述遠心透鏡組來區隔多個所述發光晶片的光線,每個所述發光晶片的光線能夠單獨地被所述影像處理模組與所述演算模組所檢測,進而得知每個所述發光晶片的光參數。 To sum up, in the detection device and the light receiving device disclosed in the embodiments of the present invention, the telecentricity is disposed before the light of the plurality of light-emitting chips enters the image processing module. a lens group to separate the light of a plurality of the light-emitting chips through the telecentric lens group, and the light of each light-emitting chip can be independently detected by the image processing module and the calculation module, and then Know the light parameters of each of the light-emitting wafers.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, rather than make any claims to the protection scope of the present invention. limit.
100:檢測設備 100: Testing equipment
1:電性檢測裝置 1: Electrical testing device
11:探針卡 11: Probe card
12:光學對位模組 12: Optical alignment module
13:透光載盤 13: Translucent carrier disc
131:承載面 131: Bearing surface
132:出光面 132: light-emitting surface
14:移載模組 14: Transfer module
2:收光裝置 2: Light receiving device
21:遠心透鏡組 21: Telecentric lens group
211:入光端 211: Lighting end
212:出光端 212: light output end
22:影像處理模組 22: Image processing module
221:影像接收器 221: Image receiver
222:信號處理單元 222: Signal processing unit
23:演算模組 23: Calculation module
24:減光鏡 24: ND filter
25:分光鏡 25: Beamsplitter
26:光譜儀 26: Spectrometer
200:發光晶片 200: Luminous Chip
300:載體 300: Carrier
L1:第一光線 L1: first ray
σ1:第一發散角度 σ1: first divergence angle
L2:第二光線 L2: second ray
σ2:第二發散角度 σ2: Second divergence angle
圖1為本發明實施例一的檢測設備的示意圖。 FIG. 1 is a schematic diagram of a detection device according to Embodiment 1 of the present invention.
圖2為圖1的局部示意圖。 FIG. 2 is a partial schematic view of FIG. 1 .
圖3為圖2的局部示意圖。 FIG. 3 is a partial schematic view of FIG. 2 .
圖4為本發明實施例二的檢測設備的局部示意圖。
FIG. 4 is a partial schematic diagram of a detection device according to
圖5為圖4的局部示意圖。 FIG. 5 is a partial schematic view of FIG. 4 .
以下是通過特定的具體實施例來說明本發明所公開有關“檢測設備及其收光裝置”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following are specific embodiments to illustrate the embodiments of the “detection device and its light-receiving device” disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應 受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although terms such as "first", "second", "third" and the like may be used herein to describe various elements or signals, these elements or signals should not be subject to these terms. These terms are primarily used to distinguish one element from another element, or a signal from another signal. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
[實施例一] [Example 1]
請參閱圖1至圖3所示,其為本發明的實施例一。本實施例公開一種檢測設備100,其能同時對多個發光晶片200(如:發光二極體晶片)進行電性與光參數的檢測。其中,所述檢測設備100包含有一電性檢測裝置1及鄰近地設置於所述電性檢測裝置1的一收光裝置2。
Please refer to FIG. 1 to FIG. 3 , which are Embodiment 1 of the present invention. This embodiment discloses a
需先說明的是,所述收光裝置2於本實施例中是以搭配於所述電性檢測裝置1來說明,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述收光裝置2也可以是單獨地應用(如:販賣)或搭配其他裝置使用(如:不同於本實施例電性檢測裝置1的其他檢測裝置)。
It should be noted that the light receiving
所述電性檢測裝置1包含一探針卡11、位置對應於所述探針卡11的一光學對位模組12(如:感光耦合元件,CCD)、位置與所述探針卡11相對應的一透光載盤13、及一移載模組14。其中,所述探針卡11、所述光學對位模組12、及所述透光載盤13可以是安裝於所述移載模組14上,據以能夠通過所述移載模組14而進行多軸向位移。
The electrical detection device 1 includes a
再者,所述探針卡11的類型可以依據設計需求而加以調整變化,例如:所述探針卡11可以是懸臂式探針卡、垂直式探針卡、或微機電探針卡,本發明在此不加以限制。所述光學對位模組12與所述透光載盤13分別位於所述探針卡11的相反兩側,以利於所述光學對位模組12偵測所述探針卡11與所述透光載盤13的相對位置。
Furthermore, the type of the
更詳細地說,所述透光載盤13於本實施例中呈透明狀,並且所述透光載盤13具有用來承載多個發光晶片200的一承載面131與位於所述承載
面131相反側的一出光面132。其中,所述透光載盤13所能用來承載的多個所述發光晶片200的數量較佳是100顆以上且設置於一載體300(如:藍色黏貼膜),但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述透光載盤13也能用來承載的未設置在任何載體上的多個發光晶片200;或者,所述透光載盤13所能用來承載的多個所述發光晶片200的數量也可以是少於100顆。
In more detail, the light-transmitting
依上所述,所述探針卡11能通過所述光學對位模組12的對位後,而用來同時供電且電性檢測(如:電壓、電流、及功率)所述透光載盤13上的多個所述發光晶片200,以使每個所述發光晶片200朝向所述出光面132發出具有第一發散角度σ 1的一第一光線L1。其中,每道所述第一光線L1的所述第一發散角度σ 1於本實施例是以110度~130度來說明,但本發明不以此為限。
According to the above, the
所述收光裝置2鄰近地設置於所述透光載盤13的所述出光面132;也就是說,所述收光裝置2是位於每個所述發光晶片200的出光路徑上。進一步地說,相鄰的任兩個所述發光晶片200所發出的兩道所述第一光線L1於本實施例中在抵達所述收光裝置2的時候,是以局部彼此重疊來說明,但本創作不受限於此。舉例來說,在本發明未繪示的其他實施例中,相鄰的任兩個所述發光晶片200所發出的兩道所述第一光線L1在抵達所述收光裝置2的時候,也可以是彼此未重疊。
The light-receiving
所述收光裝置2於本實施例中包含有一遠心透鏡組21、位於所述遠心透鏡組21一側的一影像處理模組22、及電性耦接於所述影像處理模組22的一演算模組23。
In this embodiment, the
需額外說明的是,所述收光裝置2與所述透光載盤13之間的最短距離(如:所述入光端211相較於所述出光面132的距離)可以是介於80公厘
(mm)~150公厘,但此數值可以依據設計需求而加以調整變化,並不以本實施例為限。
It should be noted that the shortest distance between the light-receiving
所述遠心透鏡組21可以是由多個透鏡相互搭配所構成,並且所述遠心透鏡組21包含有鄰近於所述出光面132的一入光端211及遠離所述入光端211的一出光端212;也就是說,所述入光端211位於每個所述發光晶片200的出光路徑上。
The
再者,所述遠心透鏡組21用來導引由所述出光面132穿出而自所述入光端211穿入其內的多道所述第一光線L1,並使多道所述第一光線L1自所述出光端212穿出且形成多道第二光線L2。其中,每道所述第二光線L2的第二發散角度σ 2小於相對應所述第一光線L1的所述第一發散角度σ 1。
Furthermore, the
進一步地說,所述第二發散角度σ 2於本實施例中是在10度以內(如:1度~3度),據以使多道所述第二光線L2能夠彼此不重疊,據以有效地避免多道所述第二光線L2之間的相互干擾。例如:所述收光裝置2的所述遠心透鏡組21於本實施例中能用來同時導引(位於所述透光載盤13的)100顆以上的多個所述發光晶片200所發出的多道所述第一光線L1,以形成100道以上彼此不重疊的多道所述第二光線L2,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,所述遠心透鏡組21可以是能夠用來導引彼此重疊的多道所述第一光線L1,以使其形成重疊程度較低的多道所述第二光線L2,據以降低多道所述第二光線L2之間的相互干擾。
Further, the second
所述影像處理模組22設置於所述遠心透鏡組21的所述出光端212,用來接收並處理自所述出光端212穿出的每道所述第二光線L2,以計算出相對應的所述發光晶片200的RGB灰階值。再者,所述演算模組23電性耦接於所述影像處理模組22,用來接收每個所述發光晶片200的所述RGB灰階值並演算出每個所述發光晶片200的光參數。
The
更詳細地說,所述影像處理模組22於本實施例中包含有鄰接於所述出光端212的一影像接收器221(如:彩色感光耦合元件)及電性耦接所述影像接收器221與所述演算模組23的一信號處理單元222,但本發明不以此為限。其中,所述影像接收器221能以其多個像素(pixel)接收任一道所述第二光線L2而對應產生一發光晶片影像,所述信號處理單元222能用來對每個所述發光晶片影像進行影像處理,以計算出相對應的所述RGB灰階值(0~65536種顏色)。
More specifically, the
其中,所述信號處理單元222於本實施例中是同步處理所有發光晶片200所對應的發光晶片影像,但每個所述發光晶片200的所述發光晶片影像是通過所述信號處理單元222單獨地處理;也就是說,每個所述發光晶片影像都可以被所述信號處理單元222獨立地進行影像處理,其處理過程如下所載。將屬於Tiff影像檔的每個所述發光晶片影像依序經由:轉換RGB影像、灰階化、模糊化、及二值化等步驟,而後將每個所述發光晶片影像轉換並繪出感興趣區域(region of interest,ROI)影像,進而計算出相對應的所述RGB灰階值,但本發明不以此為限。
Wherein, in this embodiment, the
據此,所述檢測設備100於本實施例中可以通過在多個所述發光晶片200的光線(如:多道所述第一光線L1)進入所述影像處理模組22之前設置有所述遠心透鏡組21,以通過所述遠心透鏡組21來區隔多個所述發光晶片200的光線(如:多道所述第二光線L2),使得每個所述發光晶片200的光線(如:所述第二光線L2)能夠單獨地被所述影像處理模組22與所述演算模組23所檢測,進而得知每個所述發光晶片200的光參數。
Accordingly, in the present embodiment, the
[實施例二] [Example 2]
請參閱圖4和圖5所示,其為本發明的實施例二。由於本實施例類似上述實施例一,所以兩個實施例的相同處不再加以贅述,而本實施例相
較於上述實施例一的差異主要在於所述收光裝置2。
Please refer to FIG. 4 and FIG. 5 , which is the second embodiment of the present invention. Since this embodiment is similar to the above-mentioned first embodiment, the similarities between the two embodiments will not be repeated.
The difference from the first embodiment above mainly lies in the
於本實施例中,所述收光裝置2進一步包含有位於所述入光端211與所述出光面132之間的一減光鏡24、連接於所述遠心透鏡組21的一分光鏡25、及位於所述分光鏡25與所述演算模組23之間的一光譜儀26。其中,所述減光鏡24與所述影像處理模組22相當於分別位在所述遠心透鏡組21的相反兩側,並且所述減光鏡24於本實施例中是以設置於所述遠心透鏡組21的所述入光端211上來說明,據以用來降低每道所述第一光線L1的光線強度。
In this embodiment, the
也就是說,所述收光裝置2於本實施例中可以通過所述減光鏡24來使穿過其中的每道所述第一光線L1的光線強度衰減,據以避免所述第一光線L1的光線強度過高而影響到後面構件(如:所述影像處理模組22及所述光譜儀26)的測量精準度。舉例來說:所述減光鏡24可以使每道所述第一光線L1的光線強度衰減至所述影像處理模組22(或所述光譜儀26)所能承受的最大強度的80%以下,但本發明不以此為限。
That is to say, in this embodiment, the
所述分光鏡25連接於所述遠心透鏡組21,用來接收每道所述第二光線L2。其中,所述分光鏡25的位置對應於所述影像處理模組22與所述光譜儀26,用來使其所接收的每道所述第二光線L2被導引至所述影像處理模組22與所述光譜儀26。再者,所述分光鏡25於本實施例中是內建於所述遠心透鏡組21,但本發明不以此為限。
The
再者,所述光譜儀26能依據其所接收的多道所述第二光線L2而計算出多個所述發光晶片200的一平均光譜,並且所述光譜儀26電性耦接於所述演算模組23,用以能將其所計算出的所述平均光譜傳輸至所述演算模組23。據此,所述演算模組23能依據所述RGB灰階值與所述平均光譜,而演算出每個所述發光晶片200的所述光參數(如:波峰長或半波寬)。
Furthermore, the
換個角度來說,所述演算模組23可以通過所述平均光譜而演算
出來的一個所述發光晶片200的光參數作為基準參考值,據以使用所述基準參考值來校正通過每個所述RGB灰階值,進而演算出來的每個所述發光晶片200的光參數;其後,所述演算模組23再依據預設的設計需求演算出每個所述發光晶片200的光參數(如:波峰長或半波寬)。
To put it another way, the
據此,所述收光裝置2可以通過採用具備不同檢測方式的所述影像處理模組22與所述光譜儀26,以使所述演算模組23能通過所述光譜儀26所得出的所述平均光譜來校正自所述影像處理模組22所計算出的每個所述發光晶片200的所述RGB灰階值,進而能夠取得更為精準的每個所述發光晶片200的所述光參數。
Accordingly, the
需補充說明的是,所述收光裝置2於本實施例中雖是以包含上述構件來說明,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述收光裝置2也可以依據設計需求而選擇性地省略所述減光鏡24、所述分光鏡25、及所述光譜儀26的至少其中之一。
It should be added that although the
[本發明實施例的技術效果] [Technical effects of the embodiments of the present invention]
綜上所述,本發明實施例所公開的檢測設備及其收光裝置,通過在多個所述發光晶片的光線進入所述影像處理模組之前設置有所述遠心透鏡組,以通過所述遠心透鏡組來區隔多個所述發光晶片的光線,每個所述發光晶片的光線能夠單獨地被所述影像處理模組與所述演算模組所檢測,進而得知每個所述發光晶片的光參數。 To sum up, in the detection device and the light receiving device thereof disclosed in the embodiments of the present invention, the telecentric lens group is provided before the light from a plurality of the light-emitting chips enters the image processing module, so as to pass the light from the light-emitting chips. A telecentric lens group is used to separate the light of a plurality of the light-emitting chips, and the light of each light-emitting chip can be independently detected by the image processing module and the calculation module, and then the light of each light-emitting chip can be known. Optical parameters of the wafer.
再者,本發明實施例所公開的檢測設備及其收光裝置,通過以所述遠心透鏡組來多道所述第一光線形成具有較小發散角度的多道所述第二光線,據以有效地避免多道所述第二光線之間的相互干擾。其中,所述遠心透鏡組較佳是能夠使得局部重疊的多道所述第一光線形成彼此不重疊的多道所述第二光線。 Furthermore, in the detection device and the light-receiving device thereof disclosed in the embodiments of the present invention, the telecentric lens group is used to generate multiple first rays of light to form multiple second rays with smaller divergence angles. Mutual interference between multiple second light beams is effectively avoided. Wherein, the telecentric lens group is preferably capable of forming a plurality of the partially overlapping first rays of light to form a plurality of the second rays of light which do not overlap each other.
另,本發明實施例所公開的檢測設備及其收光裝置,可以通過在所述遠心透鏡組的所述入光端與所述透光載盤的所述出光面之間設置有減光鏡,使得穿過所述減光鏡的每道所述第一光線的光線強度衰減,據以避免所述第一光線的光線強度過高而影響到後面構件(如:所述影像處理模組及所述光譜儀)的測量精準度。 In addition, in the detection device and the light-receiving device thereof disclosed in the embodiments of the present invention, a dimming mirror can be arranged between the light-incident end of the telecentric lens group and the light-emitting surface of the light-transmitting carrier disk , so that the light intensity of each first light passing through the ND filter is attenuated, so as to prevent the light intensity of the first light from being too high and affecting the rear components (such as the image processing module and the the measurement accuracy of the spectrometer).
又,本發明實施例所公開的檢測設備及其收光裝置,通過採用具備不同檢測方式的所述影像處理模組與所述光譜儀,以使所述演算模組能通過所述光譜儀所得出的所述平均光譜來校正自所述影像處理模組所計算出的每個所述發光晶片的所述RGB灰階值,進而能夠取得更為精準的每個所述發光晶片的所述光參數。 In addition, the detection device and the light-receiving device thereof disclosed in the embodiments of the present invention employ the image processing module and the spectrometer with different detection methods, so that the calculation module can obtain the result obtained by the spectrometer. The average spectrum is used to correct the RGB grayscale values of each of the light-emitting chips calculated by the image processing module, so that more accurate light parameters of each of the light-emitting chips can be obtained.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。 The content disclosed above is only a preferred feasible embodiment of the present invention, and is not intended to limit the patent scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the patent scope of the present invention. Inside.
13:透光載盤 131:承載面 132:出光面 2:收光裝置 21:遠心透鏡組 211:入光端 212:出光端 22:影像處理模組 221:影像接收器 222:信號處理單元 23:演算模組 24:減光鏡 25:分光鏡 26:光譜儀 200:發光晶片 300:載體 13: Translucent carrier disc 131: Bearing surface 132: Light-emitting surface 2: Light receiving device 21: Telecentric lens group 211: light-in side 212: light output end 22: Image processing module 221: Image Receiver 222: Signal Processing Unit 23: Calculation module 24: ND filter 25: Beamsplitter 26: Spectrometer 200: Luminous Chip 300: Carrier
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