TWI753761B - Memory device startup information reconstruction method and system thereof - Google Patents
Memory device startup information reconstruction method and system thereof Download PDFInfo
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Abstract
Description
本發明是有關於一種記憶體裝置啟動資訊還原方法及其系統,且特別是有關於一種依據專屬序號及對照表以索引並取得對應的記憶體裝置的非揮發性記憶體損壞區塊位址資料,並對其編碼以據此產生使用者系統資料的記憶體裝置啟動資訊還原方法及其系統。The present invention relates to a method and system for restoring boot information of a memory device, and more particularly, to a method for indexing and obtaining the address data of non-volatile memory damaged blocks of a corresponding memory device according to an exclusive serial number and a comparison table , and encode it to generate user system data according to the memory device activation information restoration method and system.
一般來說,儲存裝置(例如固態硬碟)包含控制器及非揮發性記憶體(例如快閃記憶體),其中非揮發性記憶體是用來儲存資料。記憶體製造商在製造非揮發性記憶體時,難免會有一些非揮發性記憶體未達到原廠的規格,而被列為降級品(downgrade)。因此,這些降級品在組裝為產品前,需要先進行開卡(初始化)的步驟,以取得非揮發性記憶體中所有損壞區塊(bad block)的位址,並將其記錄至開機啟動資訊(或稱啟動資訊)中。開機啟動資訊通常是儲存於非揮發性記憶體中的資訊區塊(information block)。然而,這些降級品在SMT(Surface Mount Technology)生產作業時,因回焊爐(reflow oven)的高溫環境,而導致開機啟動資訊遭到損毀或遺失,進而被列為不良品,從而影響企業的營收獲利。Generally, a storage device (eg, a solid state drive) includes a controller and a non-volatile memory (eg, flash memory), where the non-volatile memory is used to store data. When memory manufacturers manufacture non-volatile memories, it is inevitable that some non-volatile memories do not meet the original specifications and are listed as downgrades. Therefore, before these degraded products are assembled into products, a card opening (initialization) step is required to obtain the addresses of all bad blocks in the non-volatile memory and record them in the boot information. (or startup information). The boot-up information is usually an information block stored in non-volatile memory. However, these degraded products are classified as defective products due to the high temperature environment of the reflow oven during the production of SMT (Surface Mount Technology). Profitable revenue.
因此,為了解決非揮發性記憶體的降級品在通過回焊爐時,因回焊爐的高溫環境,而導致非揮發性記憶體中的開機啟動資訊遭到損毀或遺失的問題。本發明實施例提供一種記憶體裝置啟動資訊還原方法,適用於記憶體裝置及其開卡軟體,其中記憶體裝置包括非揮發性記憶體,非揮發性記憶體包括多個良好區塊及多個損壞區塊,記憶體裝置啟動資訊還原方法,包括:開卡軟體依據專屬序號及對照表,取得對應記憶體裝置的非揮發性記憶體損壞區塊位址資料;開卡軟體使記憶體裝置,依據非揮發性記憶體損壞區塊位址資料,抹除非揮發性記憶體中的這些良好區塊;以及開卡軟體產生使用者系統資料,並使記憶體裝置將其寫入至非揮發性記憶體中。Therefore, in order to solve the problem that the boot information in the non-volatile memory is damaged or lost due to the high temperature environment of the reflow oven when the degraded product of the non-volatile memory passes through the reflow oven. Embodiments of the present invention provide a method for restoring boot information of a memory device, which is suitable for a memory device and a card opening software thereof, wherein the memory device includes a non-volatile memory, and the non-volatile memory includes a plurality of good blocks and a plurality of In the damaged block, the memory device starts the information restoration method. Erase these good blocks in the non-volatile memory according to the bad block address data of the non-volatile memory; and the card opening software generates the user system data and makes the memory device write it to the non-volatile memory in the body.
在本發明的一實施例中,其中在開卡軟體依據專屬序號及對照表,取得對應記憶體裝置的非揮發性記憶體損壞區塊位址資料的步驟前,記憶體裝置啟動資訊還原方法,更包括:其中,記憶體裝置通過回焊爐之前,記憶體裝置啟動資訊還原方法,包括:開卡軟體接收記憶體裝置產生的非揮發性記憶體損壞區塊位址資料,並針對記憶體裝置產生專屬序號,其中非揮發性記憶體損壞區塊位址資料與專屬序號為一對一對應關係;開卡軟體建立非揮發性記憶體損壞區塊位址資料與專屬序號之間的對照表;以及開卡軟體以電子裝置的高階錯誤更正單元,或使記憶體裝置以記憶體裝置的低階錯誤更正單元,對專屬序號進行編碼,再寫入多筆已編碼的專屬序號至非揮發性記憶體中;其中,記憶體裝置通過回焊爐之後,記憶體裝置啟動資訊還原方法,更包括:開卡軟體以電子裝置的高階錯誤更正單元,或使記憶體裝置以記憶體裝置的低階錯誤更正單元,對非揮發性記憶體中這些已編碼的專屬序號的至少一筆進行解碼,以還原專屬序號。In an embodiment of the present invention, the memory device activates the information restoration method before the step of obtaining the address data of the non-volatile memory damaged block corresponding to the memory device by the card opening software according to the exclusive serial number and the comparison table, It further includes: before the memory device passes through the reflow oven, the memory device starts the information restoration method, including: the card opening software receives the non-volatile memory damaged block address data generated by the memory device, and responds to the memory device Generate an exclusive serial number, in which the non-volatile memory damaged block address data and the exclusive serial number have a one-to-one correspondence; the card opening software creates a comparison table between the non-volatile memory damaged block address data and the exclusive serial number; And the card opening software uses the high-level error correction unit of the electronic device, or enables the memory device to use the low-level error correction unit of the memory device to encode the exclusive serial number, and then write multiple encoded exclusive serial numbers to the non-volatile memory. wherein, after the memory device passes through the reflow oven, the memory device starts the information restoration method, further comprising: the card opening software uses the high-level error correction unit of the electronic device, or makes the memory device use the low-level error of the memory device The correction unit decodes at least one of the encoded exclusive serial numbers in the non-volatile memory to restore the exclusive serial numbers.
在本發明的一實施例中,其中在開卡軟體以電子裝置的高階錯誤更正單元,或使記憶體裝置以記憶體裝置的低階錯誤更正單元,對專屬序號進行編碼,再寫入這些已編碼的專屬序號至非揮發性記憶體中的步驟後,更包括:開卡軟體使記憶體裝置將非揮發性記憶體劃分為系統資料區及用戶資料區。In an embodiment of the present invention, the card opening software uses the high-level error correction unit of the electronic device, or the memory device uses the low-level error correction unit of the memory device to encode the exclusive serial number, and then write these After the step of encoding the exclusive serial number into the non-volatile memory, the step further includes: the card opening software enables the memory device to divide the non-volatile memory into a system data area and a user data area.
在本發明的一實施例中,其中在開卡軟體使記憶體裝置,依據非揮發性記憶體損壞區塊位址資料,抹除非揮發性記憶體中的這些良好區塊的步驟後,更包括:開卡軟體使記憶體裝置將非揮發性記憶體劃分為系統資料區及用戶資料區。In an embodiment of the present invention, after the step of erasing the good blocks in the non-volatile memory according to the damaged block address data of the non-volatile memory by the card opening software, the memory device further includes: : The card opening software enables the memory device to divide the non-volatile memory into system data area and user data area.
在本發明的一實施例中,其中在開卡軟體產生使用者系統資料的步驟中,更包括:開卡軟體以電子裝置的低階錯誤更正單元,對非揮發性記憶體損壞區塊位址資料進行編碼,以產生使用者系統資料。In an embodiment of the present invention, the step of generating the user system data by the card opening software further includes: the card opening software uses a low-level error correction unit of the electronic device to correct the damaged block address of the non-volatile memory Data is encoded to generate user system data.
本發明實施例另提供一種記憶體裝置啟動資訊還原系統,包括:記憶體裝置,包含非揮發性記憶體,非揮發性記憶體包括多個良好區塊及多個損壞區塊;以及電子裝置,耦接於記憶體裝置,電子裝置包含開卡軟體以執行記憶體裝置啟動資訊還原方法,記憶體裝置啟動資訊還原方法,包括:開卡軟體依據專屬序號及對照表,取得對應記憶體裝置的非揮發性記憶體損壞區塊位址資料;開卡軟體使記憶體裝置,依據非揮發性記憶體損壞區塊位址資料,抹除非揮發性記憶體中的這些良好區塊;以及開卡軟體產生使用者系統資料,並使記憶體裝置將其寫入至非揮發性記憶體中。An embodiment of the present invention further provides a system for restoring boot information of a memory device, including: a memory device including a non-volatile memory, the non-volatile memory including a plurality of good blocks and a plurality of damaged blocks; and an electronic device, The electronic device is coupled to the memory device, and the electronic device includes a card-opening software to execute a method for restoring activation information of the memory device. The volatile memory corrupts the block address data; the card opening software causes the memory device to erase these good blocks in the non-volatile memory according to the non-volatile memory corrupted block address data; and the card opening software generates User system data and have the memory device write it to non-volatile memory.
本發明實施例所提供的記憶體裝置啟動資訊還原方法及其系統,在記憶體裝置通過回焊爐之前,開卡軟體藉由專屬序號以建立對應的記憶體裝置的非揮發性記憶體損壞區塊位址資料之間的對應關係。接著寫入多筆已編碼的專屬序號至非揮發性記憶體中。在記憶體裝置通過回焊爐之後,開卡軟體藉由解碼後的專屬序號,通過對照表以索引並取得對應記憶體裝置的非揮發性記憶體損壞區塊位址資料。接著對非揮發性記憶體損壞區塊位址資料進行編碼,並據此產生且還原使用者系統資料。然後將其寫入至非揮發性記憶體中。藉此,藉由專屬序號及對照表而成功地取得非揮發性記憶體損壞區塊位址資料並還原使用者系統資料至非揮發性記憶體中,從而有效地避免記憶體裝置在通過回焊爐時,因回焊爐的高溫環境,而使非揮發性記憶體中多筆相同的非揮發性記憶體損壞區塊位址資料遭到損毀或遺失,以致記憶體裝置在通過回焊爐後,無法還原使用者系統資料的問題。In the method and system for restoring boot information of a memory device provided by the embodiments of the present invention, before the memory device passes through the reflow oven, the card opening software establishes the non-volatile memory damaged area of the corresponding memory device with the exclusive serial number Correspondence between block address data. Then write multiple coded unique serial numbers into the non-volatile memory. After the memory device passes through the reflow oven, the card opening software uses the decoded exclusive serial number to index and obtain the non-volatile memory damaged block address data of the corresponding memory device through the comparison table. Then, the non-volatile memory damaged block address data is encoded, and the user system data is generated and restored accordingly. It is then written to non-volatile memory. In this way, the address data of the damaged block of the non-volatile memory can be successfully obtained through the exclusive serial number and the comparison table, and the user system data can be restored to the non-volatile memory, thereby effectively preventing the memory device from reflowing through soldering. During the furnace, due to the high temperature environment of the reflow furnace, the same non-volatile memory damaged block address data in the non-volatile memory is damaged or lost, so that the memory device passes through the reflow furnace. , the problem that the user's system data cannot be restored.
上述說明僅是本發明技術方案的概述,為了能夠更清楚瞭解本發明的技術手段,而可依照說明書的內容予以實施,並且為了讓本發明的上述和其他目的、特徵和優點能夠更明顯易懂,以下特舉較佳實施例,並配合附圖,詳細說明如下。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。The above description is only an overview of the technical solutions of the present invention, in order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand , the following specific preferred embodiments, and in conjunction with the accompanying drawings, are described in detail as follows. In order to make the above-mentioned and other objects, features and advantages of the present invention more obvious and easy to understand, the following specific embodiments are given and described in detail in conjunction with the accompanying drawings.
圖1是依照本發明實施例所繪示之記憶體裝置啟動資訊還原系統的系統架構示意圖。如圖1所示,記憶體裝置啟動資訊還原系統1包括記憶體裝置10及耦接於記憶體裝置10的電子裝置20。記憶體裝置10包含非揮發性記憶體110、記憶體控制器120及低階錯誤更正單元130,其中記憶體控制器120耦接於非揮發性記憶體110及低階錯誤更正單元130,其中非揮發性記憶體110包括多個損壞區塊、多個良好區塊(good block),其中良好區塊較佳是用以儲存資料的資料區塊,且每一個資料區塊包括多個資料頁。記憶體裝置10較佳是儲存資料的裝置,例如是固態硬碟(solid-state drive)或SD(secure digital)記憶卡。非揮發性記憶體110可以是具有長時間資料保存之資料儲存媒體,例如是快閃記憶體(Flash Memory)。電子裝置20包含開卡軟體210、高階錯誤更正單元220及處理器230。處理器230主要是用以依據開卡軟體210的指令或步驟,以控制高階錯誤更正單元220或記憶體裝置10或者是與記憶體裝置10進行通訊,以傳送或接收指令/資料,其中處理器230耦接於開卡軟體210及高階錯誤更正單元220,電子裝置20較佳為電腦或隨身碟。此外,電子裝置20還可包括耦接於處理器230的低階錯誤更正單元(圖未繪),例如是低階的錯誤更正編解碼器,其使用一般錯誤更正/糾錯能力的的錯誤更正碼,例如BCH碼。FIG. 1 is a schematic diagram of a system structure of a memory device boot information restoration system according to an embodiment of the present invention. As shown in FIG. 1 , the memory device activation
記憶體裝置10在製造階段時,記憶體製造商藉由電子裝置20對記憶體裝置10進行開卡(初始化)。更進一步來說,記憶體製造商藉由載入並執行開卡軟體210,以對記憶體裝置10進行開卡。開卡主要包括低階初始化及高階初始化。低階初始化是在記憶體裝置10通過回焊爐之前的階段,主要是針對記憶體裝置10的非揮發性記憶體損壞區塊位址資料(損壞區塊記錄表),建立一對一對應關係的專屬序號(唯一的序號),以通過對照表索引對應的記憶體裝置的非揮發性記憶體損壞區塊位址資料。接著將多筆已編碼的專屬序號寫入至非揮發性記憶體110中,並將非揮發性記憶體損壞區塊位址資料及對照表儲存至電子裝置20或雲端主機(圖未繪)。高階初始化是在記憶體裝置10通過回焊爐之後的階段,主要是藉由對這些已編碼的專屬序號進行解碼,以還原專屬序號。接著藉由讀取還原的專屬序號,以通過對照表索引並取得對應記憶體裝置10的非揮發性記憶體損壞區塊位址資料。然後對非揮發性記憶體損壞區塊位址資料進行編碼,並據此產生且還原使用者系統資料(開機啟動資訊或啟動資訊,其包含損壞區塊記錄表),之後其寫入至非揮發性記憶體110中。When the
請同時參閱圖1及圖2,圖2是依照本發明實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之前後的流程示意圖。電子裝置20包含開卡軟體210以執行記憶體裝置啟動資訊還原方法,記憶體裝置啟動資訊還原方法包括以下步驟:在記憶體裝置10通過回焊爐之前,如步驟S100所示,記憶體控制器120對非揮發性記憶體110進行掃描或偵測,以檢查非揮發性記憶體110中的每一個區塊是否存在損壞區塊。一旦記憶體控制器120發現損壞區塊,就會將此損壞區塊的資訊(例如損壞區塊的位址)標註或記錄於非揮發性記憶體損壞區塊位址資料(例如儲存非揮發性記憶體110中所有損壞區塊的位址),並將所產生的非揮發性記憶體損壞區塊位址資料傳送給電子裝置20或開卡軟體210。Please refer to FIG. 1 and FIG. 2 at the same time. FIG. 2 is a schematic flowchart of a method for restoring boot information of a memory device according to an embodiment of the present invention before and after the memory device passes through a reflow oven. The
如步驟S110所示,電子裝置20或開卡軟體210接收記憶體裝置10所產生的非揮發性記憶體損壞區塊位址資料(損壞區塊記錄表),並針對記憶體裝置10產生專屬序號。專屬序號較佳是任意的數字、字母、特殊符號或其組合。換言之,非揮發性記憶體損壞區塊位址資料與專屬序號之間為一對一的對應關係,亦即特定的非揮發性記憶體損壞區塊位址資料與特定的專屬序號是專屬於特定的記憶體裝置。此外,開卡軟體210可將非揮發性記憶體損壞區塊位址資料儲存至電子裝置20的記憶體(圖未繪)中或通過網路傳送並儲存至雲端主機的記憶體(圖未繪)中。As shown in step S110 , the
如步驟S120所示,開卡軟體210建立非揮發性記憶體損壞區塊位址資料與專屬序號之間的對照表。對照表記錄非揮發性記憶體損壞區塊位址資料與專屬序號之間的對應關係。也就是說,開卡軟體210可通過對照表以索引並取得對應的記憶體裝置的非揮發性記憶體損壞區塊位址資料。此外,開卡軟體210可將對照表儲存至電子裝置20的記憶體中或通過網路傳送並儲存至雲端主機的記憶體中。As shown in step S120, the
如步驟S130所示,開卡軟體210使電子裝置20的高階錯誤更正單元220,或使記憶體控制器120以記憶體裝置10的低階錯誤更正單元130,對專屬序號進行編碼,然後再寫入多筆已編碼的專屬序號至非揮發性記憶體110中。高階錯誤更正單元220例如是高階的錯誤更正編解碼器,其使用極佳錯誤更正/糾錯能力的錯誤更正碼,例如LDPC碼(低密度奇偶校驗碼)。低階錯誤更正單元130例如是低階的錯誤更正編解碼器,其使用一般錯誤更正/糾錯能力的的錯誤更正碼,例如BCH碼。舉例來說,記憶體控制器120可藉由複製多筆(例如100筆)第一筆已編碼的專屬序號(最初的專屬序號),並將這些已編碼的專屬序號寫入至非揮發性記憶體110中一個或多個資料區塊的一個或多個資料頁。當然較佳是將已編碼的專屬序號寫滿非揮發性記憶體110中所有可用的資料區塊/資料頁。至於寫入已編碼的專屬序號的方式並不限制,可以是連續寫入、非連續寫入或隨機寫入,由於這些寫入的方式屬習知技術的範疇,在此不再贅述。As shown in step S130, the
如步驟S131所示,開卡軟體210使記憶體裝置10,藉由記憶體控制器120將非揮發性記憶體110劃分為系統資料區及用戶資料區。系統資料區較佳是由所有良好區塊中的一部分所組成,而用戶資料區塊較佳是由所有良好區塊中的另一部分所組成。舉例來說,若非揮發性記憶體110全部的良好區塊包括M個資料區塊,則第1個資料區塊至第N個資料區塊可以是系統資料區,第N+1個資料區塊至第M個資料區塊,其中N及M為正整數,且M大於N。As shown in step S131 , the
記憶體裝置10通過回焊爐之後,記憶體裝置啟動資訊還原方法,更包括以下步驟:首先,如步驟S140所示,開卡軟體210以電子裝置20的高階錯誤更正單元220,或使記憶體控制器120以記憶體裝置10的低階錯誤更正單元130,對非揮發性記憶體110中這些已編碼的專屬序號的至少一筆進行解碼,以還原專屬序號。更進一步來說,開卡軟體210使記憶體控制器120,從非揮發性記憶體110中讀取已編碼的專屬序號的至少一筆,並使處理器230藉由高階錯誤更正單元220對被讀取的這筆已編碼的專屬序號進行解碼,或使記憶體控制器120藉由低階錯誤更正單元130對被讀取的這筆已編碼的專屬序號進行解碼。藉此還原專屬序號。After the
由於專屬序號的資料量很小,通常只有幾個Byte(位元組),例如是4Byte。因此若使用比專屬序號的資料位元數量較多的同位位元(parity bit),例如是9Byte,也就是以9Byte的同位位元對4Byte的專屬序號進行保護,以確保記憶體裝置10通過回焊爐之後,藉由高階錯誤更正單元220或低階錯誤更正單元130對已編碼的專屬序號的錯誤/損毀位元進行更正,而能完全地更正成功。舉例來說,對於1KB(千位元組)的資料而言,高階錯誤更正單元220可以更正的位元數量例如是240個,低階錯誤更正單元130可以更正的位元數量例如是72個。因此,對於4Byte大小的專屬序號而言,藉由高階錯誤更正單元220或低階錯誤更正單元130對已編碼的專屬序號進行解碼後,可以成功地還原專屬序號。Due to the small amount of data of the exclusive serial number, there are usually only a few Bytes (bytes), for example, 4Bytes. Therefore, if more parity bits than the data bits of the dedicated serial number are used, such as 9 Bytes, the 4 Bytes of dedicated serial numbers are protected by the parity bits of 9 Bytes to ensure that the
如步驟S150所示,開卡軟體210依據專屬序號(即解碼後所取得的專屬序號)及對照表,取得對應記憶體裝置10的非揮發性記憶體損壞區塊位址資料。更進一步來說,開卡軟體210使處理器230至電子裝置20的記憶體中或通過網路至雲端主機的記憶體中取得對照表,並依據專屬序號通過對照表至電子裝置20的記憶體中或雲端主機的記憶體中,以索引並取得對應記憶體裝置10的非揮發性記憶體損壞區塊位址資料。As shown in step S150 , the
如步驟S160所示,開卡軟體210使記憶體控制器120,依據非揮發性記憶體損壞區塊位址資料,抹除非揮發性記憶體110中全部的良好區塊。As shown in step S160, the
如步驟S170所示,開卡軟體210依據非揮發性記憶體損壞區塊位址資料以產生使用者系統資料(開機啟動資訊/啟動資訊),並使記憶體控制器120將其寫入至非揮發性記憶體110中。更進一步來說,開卡軟體210以電子裝置20的低階錯誤更正單元(圖未繪),對非揮發性記憶體損壞區塊位址資料進行編碼,並據此產生使用者系統資料。接著,開卡軟體210使記憶體控制器120將使用者系統資料寫入至非揮發性記憶體110的系統資料區。藉此,藉由專屬序號成功地取得對應的記憶體裝置10的非揮發性記憶體損壞區塊位址資料,並據此產生並還原使用者系統資料至非揮發性記憶體110中,從而有效地避免記憶體裝置10在通過回焊爐時,因回焊爐的高溫環境,而使非揮發性記憶體110中多筆相同的非揮發性記憶體損壞區塊位址資料/開機啟動資訊遭到損毀或遺失,以致記憶體裝置10在通過回焊爐後,無法取得使用者系統資料的問題。As shown in step S170, the card-opening
請同時參閱圖1、圖2及圖3,圖3是依照本發明另一實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之前後的流程示意圖。這一個實施例(即圖3所示的步驟)的步驟與前一個實施例(即圖2所示的步驟)步驟相似,差別在於這一個實施例少了步驟S131,但多了步驟S161。由於步驟S161所執行的流程內容與步驟S131一樣,故在此不再贅述。此外,這一個實施例的步驟S100、S110、S120、S130、S140、S150、S160及S170所執行的流程內容,與前一個實施例(即圖2)的步驟S100、S110、S120、S130、S140、S150、S160及S170完全相同,故在此不再贅述。Please refer to FIGS. 1 , 2 and 3 at the same time. FIG. 3 is a schematic flowchart of a method for restoring boot information of a memory device according to another embodiment of the present invention before and after the memory device passes through a reflow oven. The steps of this embodiment (ie the step shown in FIG. 3 ) are similar to the steps of the previous embodiment (ie the step shown in FIG. 2 ), the difference is that this embodiment lacks step S131 but adds step S161 . Since the content of the process executed in step S161 is the same as that in step S131, it will not be repeated here. In addition, the content of the processes executed in steps S100, S110, S120, S130, S140, S150, S160, and S170 in this embodiment is the same as that in steps S100, S110, S120, S130, and S140 in the previous embodiment (ie, FIG. 2 ). , S150, S160 and S170 are completely the same, so they are not repeated here.
請同時參閱圖1、圖2及圖4,圖4是依照本發明另一實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之後的流程示意圖。在記憶體裝置通過回焊爐之後,開卡軟體210只要藉由讀取非揮發性記憶體110中的專屬序號並通過對照表,就可以索引並取得對應記憶體裝置10的非揮發性記憶體損壞區塊位址資料(如步驟S210所示)。接著,開卡軟體210使記憶體控制器120,依據非揮發性記憶體損壞區塊位址資料,對非揮發性記憶體110中的所有良好區塊進行抹除(如步驟S220所示)。然後,開卡軟體210對非揮發性記憶體損壞區塊位址資料進行編碼,並據此產生並還原使用者系統資料,且使記憶體控制器120將使用者系統資料寫入至非揮發性記憶體110中(如步驟S230所示)。藉此,藉由專屬序號及對照表而成功地索引並取得非揮發性記憶體損壞區塊位址資料並還原使用者系統資料至非揮發性記憶體110中,從而有效地避免記憶體裝置10在通過回焊爐時,因回焊爐的高溫環境,而使非揮發性記憶體110中多筆相同的非揮發性記憶體損壞區塊位址資料遭到損毀或遺失,以致記憶體裝置10在通過回焊爐後,無法還原使用者系統資料的問題。另外,有關步驟S210、S220及S230的進一步說明,可參閱前一個實施例的步驟S150、S160及S170的說明,在此不再贅述。Please refer to FIG. 1 , FIG. 2 and FIG. 4 at the same time. FIG. 4 is a schematic flowchart of a method for restoring boot information of a memory device according to another embodiment of the present invention after the memory device passes through a reflow oven. After the memory device passes through the reflow oven, the
綜上所述,本發明實施例所提供的記憶體裝置啟動資訊還原方法及其系統,在記憶體裝置通過回焊爐之前,開卡軟體藉由專屬序號以建立對應的記憶體裝置的非揮發性記憶體損壞區塊位址資料之間的對應關係。接著寫入多筆已編碼的專屬序號至非揮發性記憶體中。在記憶體裝置通過回焊爐之後,開卡軟體藉由解碼後的專屬序號,通過對照表以索引並取得對應記憶體裝置的非揮發性記憶體損壞區塊位址資料。接著對非揮發性記憶體損壞區塊位址資料進行編碼,並據此產生且還原使用者系統資料。然後將其寫入至非揮發性記憶體中。藉此,藉由專屬序號及對照表而成功地取得非揮發性記憶體損壞區塊位址資料並還原使用者系統資料至非揮發性記憶體中,從而有效地避免記憶體裝置在通過回焊爐時,因回焊爐的高溫環境,而使非揮發性記憶體中多筆相同的非揮發性記憶體損壞區塊位址資料遭到損毀或遺失,以致記憶體裝置在通過回焊爐後,無法還原使用者系統資料的問題。To sum up, in the method and system for restoring the boot information of a memory device provided by the embodiments of the present invention, before the memory device passes through the reflow oven, the card opening software establishes the non-volatile memory of the corresponding memory device through the exclusive serial number. Correspondence between address data of corrupted memory blocks. Then write multiple coded unique serial numbers into the non-volatile memory. After the memory device passes through the reflow oven, the card opening software uses the decoded exclusive serial number to index and obtain the non-volatile memory damaged block address data of the corresponding memory device through the comparison table. Then, the non-volatile memory damaged block address data is encoded, and the user system data is generated and restored accordingly. It is then written to non-volatile memory. In this way, the address data of the damaged block of the non-volatile memory can be successfully obtained through the exclusive serial number and the comparison table, and the user system data can be restored to the non-volatile memory, thereby effectively preventing the memory device from reflowing through soldering. During the furnace, due to the high temperature environment of the reflow furnace, the same non-volatile memory damaged block address data in the non-volatile memory is damaged or lost, so that the memory device passes through the reflow furnace. , the problem that the user's system data cannot be restored.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope of the appended patent application.
1:記憶體裝置啟動資訊還原系統 10:記憶體裝置 110:非揮發性記憶體 120:記憶體控制器 130:低階錯誤更正單元 20:電子裝置 210:開卡軟體 220:高階錯誤更正單元 230:處理器 S100~S170、S210~S230:步驟1: The memory device starts the information restoration system 10: Memory device 110: Non-volatile memory 120: Memory Controller 130: Low-order error correction unit 20: Electronics 210: Card opening software 220: Higher order error correction unit 230: Processor S100~S170, S210~S230: steps
圖1是依照本發明實施例所繪示之記憶體裝置啟動資訊還原系統的系統架構示意圖。 圖2是依照本發明實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之前後的流程示意圖。 圖3是依照本發明另一實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之前後的流程示意圖。 圖4是依照本發明另一實施例所繪示之記憶體裝置啟動資訊還原方法在記憶體裝置通過回焊爐之後的流程示意圖。 FIG. 1 is a schematic diagram of a system structure of a memory device boot information restoration system according to an embodiment of the present invention. 2 is a schematic flowchart of a method for restoring boot information of a memory device according to an embodiment of the present invention before and after the memory device passes through a reflow oven. 3 is a schematic flowchart of a method for restoring boot information of a memory device according to another embodiment of the present invention before and after the memory device passes through a reflow oven. 4 is a schematic flowchart of a method for restoring boot information of a memory device after the memory device passes through a reflow oven according to another embodiment of the present invention.
S210~S230:步驟 S210~S230: Steps
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US9213636B2 (en) * | 2008-07-09 | 2015-12-15 | Phison Electronics Corp. | Data accessing method for flash memory storage device having data perturbation module, and storage system and controller using the same |
US9940021B2 (en) * | 2015-11-20 | 2018-04-10 | Phison Electronics Corp. | Method and system for memory management and memory storage device thereof |
US20190026497A1 (en) * | 2016-03-04 | 2019-01-24 | Altera Corporation | Techniques For Protecting Security Features of Integrated Circuits |
TWI668575B (en) * | 2018-07-26 | 2019-08-11 | 慧榮科技股份有限公司 | Data storage device and control method for non-volatile memory |
US10546640B2 (en) * | 2017-03-24 | 2020-01-28 | Phison Electronics Corp. | Data protecting method and memory storage device |
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US9213636B2 (en) * | 2008-07-09 | 2015-12-15 | Phison Electronics Corp. | Data accessing method for flash memory storage device having data perturbation module, and storage system and controller using the same |
US9940021B2 (en) * | 2015-11-20 | 2018-04-10 | Phison Electronics Corp. | Method and system for memory management and memory storage device thereof |
US20190026497A1 (en) * | 2016-03-04 | 2019-01-24 | Altera Corporation | Techniques For Protecting Security Features of Integrated Circuits |
US10546640B2 (en) * | 2017-03-24 | 2020-01-28 | Phison Electronics Corp. | Data protecting method and memory storage device |
TWI668575B (en) * | 2018-07-26 | 2019-08-11 | 慧榮科技股份有限公司 | Data storage device and control method for non-volatile memory |
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