TWI750239B - Film containing filler - Google Patents

Film containing filler Download PDF

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Publication number
TWI750239B
TWI750239B TW106135620A TW106135620A TWI750239B TW I750239 B TWI750239 B TW I750239B TW 106135620 A TW106135620 A TW 106135620A TW 106135620 A TW106135620 A TW 106135620A TW I750239 B TWI750239 B TW I750239B
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TW
Taiwan
Prior art keywords
filler
layer
resin layer
film
fillers
Prior art date
Application number
TW106135620A
Other languages
Chinese (zh)
Other versions
TW201829195A (en
Inventor
尾怜司
松原真
Original Assignee
日商迪睿合股份有限公司
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Priority claimed from JP2017159828A external-priority patent/JP7035370B2/en
Application filed by 日商迪睿合股份有限公司 filed Critical 日商迪睿合股份有限公司
Publication of TW201829195A publication Critical patent/TW201829195A/en
Application granted granted Critical
Publication of TWI750239B publication Critical patent/TWI750239B/en

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Abstract

本發明之各向異性導電膜等含有填料之膜10A具備樹脂層2及填料分散層3,上述填料分散層3具有:第1填料層,其由以單層分散於樹脂層2之填料1A所構成;及第2填料層,其由在與第1填料層不同之深度以單層分散於樹脂層2之填料1B所構成。第1填料層之填料1A自樹脂層2之一表面2a露出、或接近於該表面2a,第2填料層之填料1B自樹脂層2之另一表面2b露出、或接近於該表面2b。 The filler-containing film 10A such as the anisotropic conductive film of the present invention includes a resin layer 2 and a filler-dispersed layer 3, and the filler-dispersed layer 3 includes a first filler layer composed of a filler 1A dispersed in the resin layer 2 as a single layer. and a second filler layer, which is composed of the filler 1B dispersed in the resin layer 2 as a single layer at a depth different from that of the first filler layer. The filler 1A of the first filler layer is exposed from or close to one surface 2a of the resin layer 2 , and the filler 1B of the second filler layer is exposed from or close to the other surface 2b of the resin layer 2 .

Description

含有填料之膜 Films with fillers

本發明係關於一種各向異性導電膜等含有填料之膜。 The present invention relates to a filler-containing film such as an anisotropic conductive film.

填料分散於樹脂層之含有填料之膜正被用於消光膜、電容器用膜、光學膜、標記用膜、抗靜電用膜、各向異性導電膜等多種多樣之用途中(專利文獻1、專利文獻2、專利文獻3、專利文獻4)。 Filler-containing films in which fillers are dispersed in resin layers are being used in a variety of applications such as matte films, capacitor films, optical films, marking films, antistatic films, and anisotropic conductive films (Patent Document 1, Patent Document 2, Patent Document 3, Patent Document 4).

作為含有填料之膜之一態樣,例如於IC晶片等電子零件之安裝時廣泛使用各向異性導電膜。就使各向異性導電膜應對高安裝密度之觀點而言,於各向異性導電膜中,正進行於其絕緣性樹脂層中高密度地分散導電粒子。然而,若使導電粒子之個數密度過於提高,則於使用有各向異性導電膜之電子零件彼此之連接構造體中容易產生短路。 As one aspect of the film containing a filler, for example, an anisotropic conductive film is widely used when mounting electronic components such as IC chips. From the viewpoint of making the anisotropic conductive film cope with a high mounting density, in the anisotropic conductive film, high-density dispersion of conductive particles in the insulating resin layer thereof is proceeding. However, when the number density of the conductive particles is increased too much, a short circuit is likely to occur in a connection structure of electronic components using an anisotropic conductive film.

針對於此,提出有如下方法:於製造各向異性導電膜時,使用凹版塗佈機等表面具有規則之槽之塗佈輥將包含導電粒子之樹脂液塗佈於絕緣性樹脂層或剝離膜,使導電粒子以單層規則排列於絕緣性樹脂層(專利文獻5)。又,提出有如下方法:使用轉印模具將以特定之配置分散之導電粒子分別轉印於第1絕緣性樹脂層及第2絕緣性樹脂層,將轉印有導電粒子之第1絕緣性樹脂層與第2絕緣性樹脂層貼合,於各向異性導電膜之不同之深度形成導電粒子規則排列之第1導電粒子層及第2導電粒子層(專利文獻6)。 In view of this, there has been proposed a method for applying a resin liquid containing conductive particles to an insulating resin layer or a release film using a coating roll having regular grooves on the surface, such as a gravure coater, when producing an anisotropic conductive film. , the conductive particles are regularly arranged in a single layer in the insulating resin layer (Patent Document 5). Furthermore, there is proposed a method of transferring the conductive particles dispersed in a specific arrangement to the first insulating resin layer and the second insulating resin layer, respectively, using a transfer mold, and transferring the first insulating resin to which the conductive particles are transferred. The layer and the second insulating resin layer are bonded together to form a first conductive particle layer and a second conductive particle layer in which conductive particles are regularly arranged at different depths of the anisotropic conductive film (Patent Document 6).

先前技術文獻 prior art literature 專利文獻 Patent Literature

專利文獻1:日本特開2006-15680號公報 Patent Document 1: Japanese Patent Laid-Open No. 2006-15680

專利文獻2:日本特開2015-138904號公報 Patent Document 2: Japanese Patent Laid-Open No. 2015-138904

專利文獻3:日本特開2013-103368號公報 Patent Document 3: Japanese Patent Application Laid-Open No. 2013-103368

專利文獻4:日本特開2014-183266號公報 Patent Document 4: Japanese Patent Laid-Open No. 2014-183266

專利文獻5:日本特開2016-31888號公報 Patent Document 5: Japanese Patent Laid-Open No. 2016-31888

專利文獻6:日本特開2015-201435號公報 Patent Document 6: Japanese Patent Laid-Open No. 2015-201435

根據專利文獻5記載之各向異性導電膜之製造方法,由於導電粒子規則排列,故而即便提高導電粒子之個數密度,引起短路之容易度亦低於導電粒子無規地配置之情形。然而,由於導電粒子以單層配置於各向異性導電膜之單面,故而對於在提高了個數密度之情形時以不引起短路之方式精確地排列導電粒子而言存在極限。 According to the method for producing an anisotropic conductive film described in Patent Document 5, since the conductive particles are regularly arranged, even if the number density of the conductive particles is increased, the ease of short-circuiting is lower than when the conductive particles are randomly arranged. However, since the conductive particles are arranged in a single layer on one side of the anisotropic conductive film, there is a limit to accurately arranging the conductive particles without causing a short circuit when the number density is increased.

根據專利文獻6記載之各向異性導電膜之製造方法,由於使導電粒子保持於第1絕緣性樹脂層及第2絕緣性樹脂層之各層,故而可提高各向異性導電膜整體之導電粒子之個數密度,並且抑制短路之產生。然而,若根據此處記載之各向異性導電膜之製造方法,將硬化性樹脂用於第1絕緣性樹脂層及第2絕緣性樹脂層,藉由其硬化使導電粒子保持於該等樹脂層,並將第1絕緣性樹脂層與第2絕緣性樹脂層貼合,則有各向異性導電膜之表面之黏性降低之虞,於進行將各向異性導電膜貼附於電子零件之暫時貼附、或將各向異性導電膜低溫壓接於電子零件而固定於零件之暫時壓接時作業性降低。 According to the method for producing an anisotropic conductive film described in Patent Document 6, since the conductive particles are held in each of the first insulating resin layer and the second insulating resin layer, it is possible to improve the conductivity of the conductive particles in the entire anisotropic conductive film. Number density, and suppress the generation of short circuits. However, according to the method for producing an anisotropic conductive film described here, a curable resin is used for the first insulating resin layer and the second insulating resin layer, and the conductive particles are held in these resin layers by curing , and the first insulating resin layer and the second insulating resin layer are bonded together, there is a possibility that the adhesiveness of the surface of the anisotropic conductive film will decrease, so the temporary adhesion of the anisotropic conductive film to the electronic component is performed. The workability is lowered when the anisotropic conductive film is attached or temporarily crimped to an electronic component by low-temperature crimping and fixed to the component.

針對於此,本發明之課題在於:於以各向異性導電膜為代表之含 有填料之膜中,藉由於不同之深度具有第1填料層及第2填料層,可提高填料之個數密度,提升功能性(例如,應對高密度安裝)。具體而言,課題在於:於將含有填料之膜作為各向異性導電膜構成之情形時,於電子零件彼此之連接構造體中抑制短路之產生,提升連接可靠性,進而為了使各向異性導電膜等含有填料之膜之暫時貼附或暫時壓接中之作業性提升而使膜表面具有黏性。 In view of this, the subject of the present invention is that in a film containing a filler represented by an anisotropic conductive film, by having a first filler layer and a second filler layer at different depths, the number density of the fillers can be increased, Improve functionality (eg, for high-density installations). Specifically, when a film containing a filler is formed as an anisotropic conductive film, the problem is to suppress the occurrence of short circuits in the connection structure between electronic components and improve connection reliability, and furthermore, in order to make the anisotropic conductive film The workability in temporary attachment or temporary crimping of films containing fillers such as films is improved to make the film surface sticky.

本發明者發現:於製造藉由於樹脂層之不同深度設置第1填料層及第2填料層而提高填料之個數密度,並且尤其是於製成含有填料之膜之一態樣之各向異性導電膜之情形時抑制了短路產生的含有填料之膜時,若藉由將填料壓入至樹脂層之正背兩面,而使第1填料層自樹脂層之一表面露出或設置於其表面附近並且使第2填料層自樹脂層之另一表面露出或設置於其表面附近,則導電粒子容易被要進行各向異性導電連接之電子零件之端子捕捉,連接可靠性提升,文,亦容易確保膜表面之黏性,從而想到本發明。藉由如此於兩面具備填料,可有助於含有填料之膜之性能之賦予或提升、品質之穩定及成本削減。 The present inventors have found that the number density of fillers is increased by providing the first filler layer and the second filler layer at different depths of the resin layer during manufacture, and especially the anisotropy of one aspect of making a film containing fillers In the case of a conductive film, in the case of a film containing a filler that suppresses short-circuiting, if the filler is pressed into the front and back sides of the resin layer, the first filler layer is exposed from one surface of the resin layer or disposed near the surface. In addition, the second filler layer is exposed from the other surface of the resin layer or disposed near the surface, so that the conductive particles are easily captured by the terminals of the electronic parts to be connected by anisotropic conductive connection, the connection reliability is improved, and it is easy to ensure The stickiness of the film surface led to the idea of the present invention. By providing the filler on both sides in this way, it is possible to contribute to the impartation or improvement of the performance of the film containing the filler, the stability of the quality, and the reduction of the cost.

即,本發明提供一種含有填料之膜,其具備樹脂層及填料分散層,上述填料分散層具有:第1填料層,其由以單層分散於該樹脂層之填料所構成;及第2填料層,其由在與第1填料層不同之深度以單層分散於該樹脂層之填料所構成;且第1填料層之填料自樹脂層之一表面露出、或接近於該一表面,第2填料層之填料自樹脂層之另一表面露出、或接近於該另一表面。尤其是作為含有填料之膜之較佳之一態樣,本發明提供一種含有填料之膜,其中,填料為導電粒子,樹脂層為絕緣性樹脂層,且上述含有填料之膜係用作各向異性導電膜。 That is, the present invention provides a filler-containing film including a resin layer and a filler-dispersed layer, wherein the filler-dispersed layer includes: a first filler layer composed of a filler dispersed in the resin layer in a single layer; and a second filler layer, which is composed of a single layer of filler dispersed in the resin layer at a depth different from that of the first filler layer; and the filler of the first filler layer is exposed from one surface of the resin layer, or is close to the surface, the second The filler of the filler layer is exposed from the other surface of the resin layer, or is close to the other surface. In particular, as a preferred aspect of a film containing a filler, the present invention provides a film containing a filler, wherein the filler is conductive particles, the resin layer is an insulating resin layer, and the above-mentioned film containing the filler is used as an anisotropic film. conductive film.

又,本發明提供一種上述含有填料之膜之製造方法,其係: 使填料以特定之分散狀態保持於樹脂層之一表面,並將該填料壓入至樹脂層,亦使其他填料以特定之分散狀態保持於樹脂層之另一表面,並將該填料壓入至樹脂層。 In addition, the present invention provides a method for producing the film containing the above-mentioned filler, which comprises: keeping the filler on a surface of the resin layer in a specific dispersed state, pressing the filler into the resin layer, and making other fillers in a specific state. The dispersed state is maintained on the other surface of the resin layer, and the filler is pressed into the resin layer.

又,本發明提供一種將上述含有填料之膜貼合於物品之膜貼合體、經由上述含有填料之膜將第1物品與第2物品連接之連接構造體、尤其是經由用作各向異性導電膜之含有填料之膜將第1電子零件與第2電子零件各向異性導電連接之連接構造體。進而,本發明提供一種連接構造體之製造方法,其經由上述含有填料之膜將第1物品與第2物品壓接;以及一種連接構造體之製造方法,其將第1物品、第2物品分別設為第1電子零件、第2電子零件,藉由經由用作各向異性導電膜之含有填料之膜將第1電子零件與第2電子零件進行熱壓接合而製造第1電子零件與第2電子零件各向異性導電連接而成之連接構造體。 Furthermore, the present invention provides a film-laminated body in which the above-mentioned filler-containing film is attached to an article, and a connecting structure in which a first article and a second article are connected via the above-mentioned filler-containing film; The filler-containing film of the film is a connecting structure for anisotropically conductively connecting the first electronic component and the second electronic component. Furthermore, the present invention provides a method for producing a connected structure, which press-bonds a first article and a second article through the film containing the filler; and a method for producing a connected structure, which separates the first article and the second article. The first electronic component and the second electronic component are used as the first electronic component and the second electronic component, and the first electronic component and the second electronic component are produced by thermocompression bonding of the first electronic component and the second electronic component through a film containing a filler used as an anisotropic conductive film. A connection structure formed by anisotropic conductive connection of electronic components.

根據本發明之含有填料之膜之一態樣之各向異性導電膜,由於填料係自樹脂層之正背各表面露出或接近於表面而存在,故而於作為各向異性導電膜構成之情形時,導電粒子容易被要進行各向異性導電連接之電子零件之端子捕捉。因此,連接可靠性提升。 In the anisotropic conductive film according to one aspect of the filler-containing film of the present invention, since the filler is exposed from the front and back surfaces of the resin layer or exists close to the surface, when constituted as an anisotropic conductive film , the conductive particles are easily captured by the terminals of the electronic components to be anisotropically conductively connected. Therefore, the connection reliability is improved.

又,與膜整體之填料之個數密度相比,第1填料層之個數密度及第2填料層之個數密度分別較低。因此,即便於膜整體中以高密度存在填料,亦可避免膜表面之黏性由此降低之虞。進而,根據本發明之各向異性導電膜等含有填料之膜,無需使樹脂層硬化以便將填料固定於樹脂層,因而藉此亦可於膜表面確保黏性。除黏性之改善以外,亦可期待藉由並非僅於含有填料之膜之單面之表面而是於兩面具備填料,而賦予與僅於單面之表面具備填料之情形不同之功能性。 In addition, the number density of the first filler layer and the number density of the second filler layer are respectively lower than the number density of the filler in the entire film. Therefore, even if the filler exists in a high density in the whole film, it can avoid the possibility that the viscosity of a film surface may fall by this. Furthermore, according to the film containing the filler, such as the anisotropic conductive film of the present invention, it is not necessary to harden the resin layer in order to fix the filler to the resin layer, and thus, the adhesiveness can be ensured on the film surface. In addition to the improvement in viscosity, it is also expected that by having the filler not only on the surface of one side of the film containing the filler but on both sides, it can also be expected to impart functionality different from the case where the filler is provided only on the surface of one side.

此外,由於與膜整體之填料之個數密度相比,第1填料層之個數 密度及第2填料層之個數密度分別降低,故而變得容易精確地控制各個填料層中之填料之配置,即便縮窄各向異性導電膜等含有填料之膜整體之填料之配置間距,亦可將填料精確地配置成特定之配置。因此,與上述捕捉性之提升相結合,亦適合於微間距之連接,例如可用於端子寬度6μm~50μm、端子間間隔6μm~50μm之電子零件之連接。又,只要有效連接端子寬度(於連接時對向之一對端子之寬度之中,於俯視下重疊之部分之寬度)為3μm以上、最短端子間距離為3μm以上,則可不引起短路而連接電子零件。又,作為另一態樣,例如有光學膜,可藉由調整填料於樹脂層中在厚度方向及俯視下未接觸而獨立之個數比例而調整填料之光學性能。對於消光膜等與外觀直接相關者亦可謂相同。由於可於兩面對其進行調整,故而容易有助於性能或品質之提升及成本削減。 In addition, since the number density of the first filler layer and the number density of the second filler layer are respectively lower than the number density of the fillers in the entire film, it becomes easy to precisely control the arrangement of the fillers in each filler layer Therefore, even if the arrangement spacing of fillers in the whole film containing fillers such as anisotropic conductive films is narrowed, the fillers can be precisely arranged in a specific arrangement. Therefore, combined with the above-mentioned improvement of catchability, it is also suitable for the connection of fine pitches, for example, it can be used for the connection of electronic parts with terminal widths of 6 μm to 50 μm and spacing between terminals of 6 μm to 50 μm. In addition, as long as the effective connection terminal width (the width of the overlapping part in plan view among the widths of the pair of terminals facing each other during connection) is 3 μm or more, and the shortest distance between terminals is 3 μm or more, it is possible to connect electronic devices without causing a short circuit. Components. Moreover, as another aspect, for example, there is an optical film, and the optical performance of the filler can be adjusted by adjusting the number ratio of the filler in the resin layer in the thickness direction and in a plan view without contacting and being independent. The same can be said for those directly related to appearance, such as matte films. Since it can be adjusted on both sides, it is easy to contribute to performance or quality improvement and cost reduction.

1A、1B‧‧‧填料 1A, 1B‧‧‧Packing

1C、1C1、1C2‧‧‧填料單元 1C, 1C 1 , 1C 2 ‧‧‧Packing unit

2‧‧‧樹脂層 2‧‧‧Resin layer

2a、2b‧‧‧樹脂層之表面 2a, 2b‧‧‧Surface of resin layer

2x‧‧‧凹陷 2x‧‧‧dent

2y‧‧‧凹陷 2y‧‧‧Sag

3‧‧‧填料分散層 3‧‧‧Filler dispersion layer

4‧‧‧第2樹脂層 4‧‧‧Second resin layer

10、10A、10B、10C、10D、10E、10F、10G‧‧‧實施例之含有填料之膜 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G‧‧‧Films containing fillers

10Ap‧‧‧含有填料之膜之一端 10Ap‧‧‧One end of film containing filler

10Aq‧‧‧含有填料之膜之另一端 10Aq‧‧‧The other end of the film containing the filler

20、21‧‧‧端子 20, 21‧‧‧Terminal

30‧‧‧第1電子零件 30‧‧‧First Electronic Parts

31‧‧‧第2電子零件 31‧‧‧Second electronic component

A‧‧‧填料之排列之格子軸 A‧‧‧Grid axis of packing arrangement

DA、DB‧‧‧粒徑 DA, DB‧‧‧Particle Size

La‧‧‧樹脂層之層厚 La‧‧‧Layer Thickness of Resin Layer

L1、L2‧‧‧埋入量 L1, L2‧‧‧Embedding amount

L3‧‧‧第1填料層內之填料間之最接近粒子間距離 L3‧‧‧The distance between the closest particles between the fillers in the first filler layer

L4‧‧‧第2填料層內之填料間之最接近粒子間距離 L4‧‧‧The distance between the closest particles between the fillers in the second filler layer

Lc‧‧‧填料之露出部分之直徑 Diameter of exposed portion of Lc‧‧‧filler

Ld‧‧‧凹陷(傾斜)之最大直徑 Ld‧‧‧Maximum diameter of depression (inclined)

Le‧‧‧凹陷(傾斜)之最大深度 Le‧‧‧Maximum depth of depression (inclined)

Lf‧‧‧凹陷(起伏)之最大深度 Lf‧‧‧Maximum depth of depression (undulation)

θ‧‧‧端子之長邊方向與導電粒子之排列之格子軸所成之角度 θ‧‧‧The angle formed by the longitudinal direction of the terminal and the grid axis of the arrangement of the conductive particles

圖1A係表示實施例之含有填料之膜(其一態樣之各向異性導電膜)10A之填料(導電粒子)之配置的俯視圖。 1A is a plan view showing an arrangement of fillers (conductive particles) in a film containing a filler (an anisotropic conductive film of one aspect) 10A of an example.

圖1B係實施例之含有填料之膜10A之剖視圖。 FIG. 1B is a cross-sectional view of a filler-containing membrane 10A of an embodiment.

圖2係第1填料層之填料與第2填料層之填料之埋入率為大約100%且填料自樹脂層表面露出的含有填料之膜之剖視圖。 FIG. 2 is a cross-sectional view of a film containing a filler in which the filler of the first filler layer and the filler of the second filler layer have an embedding ratio of about 100% and the filler is exposed from the surface of the resin layer.

圖3係第1填料層之填料與第2填料層之填料之埋入率為大約100%且以樹脂層之表面變得平坦之方式使填料埋入至樹脂層的含有填料之膜之剖視圖。 3 is a cross-sectional view of a filler-containing film in which the filler of the first filler layer and the filler of the second filler layer have an embedding ratio of about 100% and the filler is embedded in the resin layer so that the surface of the resin layer becomes flat.

圖4係填料之埋入率略微超過100%且於填料之正上方之樹脂層之表面存在凹陷的含有填料之膜之剖視圖。 4 is a cross-sectional view of a film containing a filler in which the filling rate of the filler is slightly more than 100% and the surface of the resin layer directly above the filler has depressions.

圖5A係表示實施例之含有填料之膜(其一態樣之各向異性導電膜)10B之填料(導電粒子)之配置的俯視圖。 5A is a plan view showing an arrangement of fillers (conductive particles) in a film containing a filler (an anisotropic conductive film of one aspect) 10B of an example.

圖5B係實施例之含有填料之膜10B之剖視圖。 FIG. 5B is a cross-sectional view of the filler-containing membrane 10B of the embodiment.

圖6係利用含有填料之膜10A將電子零件進行各向異性導電連接時之剖視圖。 FIG. 6 is a cross-sectional view of an anisotropic conductive connection of electronic components using the filler-containing film 10A.

圖7A係表示實施例之含有填料之膜(其一態樣之各向異性導電膜)10C之填料(導電粒子)之配置的俯視圖。 7A is a plan view showing an arrangement of fillers (conductive particles) in a film containing a filler (anisotropic conductive film of one aspect) 10C of an example.

圖7B係實施例之含有填料之膜10C之剖視圖。 FIG. 7B is a cross-sectional view of the filler-containing membrane 10C of the embodiment.

圖8A係表示實施例之含有填料之膜(其一態樣之各向異性導電膜)10D之填料(導電粒子)之配置的俯視圖。 8A is a plan view showing an arrangement of fillers (conductive particles) in a film containing a filler (an anisotropic conductive film of one aspect) 10D of an example.

圖8B係實施例之含有填料之膜10D之剖視圖。 FIG. 8B is a cross-sectional view of the filler-containing membrane 10D of the embodiment.

圖9係表示各向異性導電連接之前後之填料單元1C之配置的俯視圖。 FIG. 9 is a plan view showing the arrangement of the packing unit 1C before and after the anisotropic conductive connection.

圖10係使用含有填料之膜10D將電子零件各向異性導電連接而成之連接構造體之剖視圖。 FIG. 10 is a cross-sectional view of a connecting structure in which electronic components are anisotropically conductively connected using a film 10D containing a filler.

圖11A係具有第2樹脂層之含有填料之膜(其一態樣之各向異性導電膜)10E之剖視圖。 11A is a cross-sectional view of a filler-containing film having a second resin layer (an anisotropic conductive film of one embodiment thereof) 10E.

圖11B係具有第2樹脂層之含有填料之膜(其一態樣之各向異性導電膜)10F之剖視圖。 11B is a cross-sectional view of a filler-containing film having a second resin layer (anisotropic conductive film of one aspect thereof) 10F.

圖11C係具有第2樹脂層之含有填料之膜(其一態樣之各向異性導電膜)10G之剖視圖。 11C is a cross-sectional view of 10G of a filler-containing film (an anisotropic conductive film of one aspect thereof) having a second resin layer.

圖12係具有第2樹脂層之含有填料之膜(其一態樣之各向異性導電膜)10之製造方法之步驟說明圖。 FIG. 12 is a process explanatory diagram of the manufacturing method of the filler-containing film (anisotropic conductive film of its one form) 10 which has a 2nd resin layer.

以下,對本發明之含有填料之膜以其一態樣之各向異性導電膜為主,一面參照圖式一面詳細地說明。再者,各圖中,相同符號表示相同或同等之構成要素。 Hereinafter, the film containing the filler of the present invention will be described in detail with reference to the drawings, mainly as an anisotropic conductive film in one aspect. In addition, in each figure, the same code|symbol represents the same or equivalent component.

<含有填料之膜之整體構成> <Overall composition of film containing filler>

圖1A係對本發明之一實施例之含有填料之膜10A之填料配置進行說明的俯視圖,圖1B係其X-X剖視圖。 1A is a plan view illustrating a filler arrangement of a film 10A containing a filler according to an embodiment of the present invention, and FIG. 1B is an X-X cross-sectional view thereof.

含有填料之膜10A由樹脂層2及填料分散層3所構成,上述填料分散層3由第1填料層及第2填料層形成,上述第1填料層由自該樹脂層2之一表面2a於膜厚方向以特定之深度單層分散之填料1A所構成,該第2填料層由以與第1填料層不同之深度單層分散之填料1B所構成。第1填料層之填料1A偏集存在於樹脂層2之一表面2a側,且自該表面2a露出,第2填料層之填料1B偏集存在於樹脂層2之另一表面2b側,且自該表面2b露出。再者,圖中將第1填料層之填料1A表示為深色,將第2填料層之填料1B表示為白色。 The filler-containing film 10A is composed of a resin layer 2 and a filler-dispersed layer 3. The filler-dispersed layer 3 is composed of a first filler layer and a second filler layer. The first filler layer is formed from a surface 2a of the resin layer 2 on the surface. The film thickness direction is composed of filler 1A monolayer dispersed at a specific depth, and the second filler layer is composed of filler 1B monolayer dispersed at a depth different from that of the first filler layer. The filler 1A of the first filler layer is segregated on the side of one surface 2a of the resin layer 2 and is exposed from the surface 2a, and the filler 1B of the second filler layer is segregated on the side of the other surface 2b of the resin layer 2 and is exposed from the surface 2a. This surface 2b is exposed. In addition, in the figure, the filler 1A of the first filler layer is shown as dark, and the filler 1B of the second filler layer is shown as white.

再者,對於本發明之填料之分散狀態,只要未特別說明,則包括填料1A、1B無規分散之狀態及以規則之配置分散之狀態。 Furthermore, the dispersion state of the filler of the present invention includes the state in which the fillers 1A and 1B are randomly dispersed and the state in which the fillers are dispersed in a regular arrangement unless otherwise specified.

又,本實施例之含有填料之膜10A中,於膜之長邊方向,第1填料層之填料1A之個數密度及第2填料層之填料1B之個數密度之一者逐漸增加,另一者逐漸減少,第1填料層與第2填料層總共之填料1A、1B之個數密度於膜整體中之均一性優異。 In addition, in the film 10A containing the filler of this embodiment, one of the number density of the filler 1A in the first filler layer and the number density of the filler 1B in the second filler layer gradually increases in the longitudinal direction of the film, and the other is One is gradually reduced, and the number density of fillers 1A and 1B in total in the first filler layer and the second filler layer is excellent in uniformity in the entire film.

<填料> <filler>

填料1A、1B可根據含有填料之膜之用途,自公知之無機系填料(金屬、金屬氧化物、金屬氮化物等)、有機系填料(樹脂粒子、橡膠粒子等)、混合存在有機系材料與無機系材料之填料(例如,中心由樹脂材料形成、表面被金屬鍍覆之粒子(金屬被覆樹脂粒子)、使絕緣性微粒子附著於導電粒子之表面而成者、對導電粒子之表面進行絕緣處理而成者等)中根據硬度、光學性能等用途要求之性能適當選擇。例如,光學膜或消光膜中,可使用二氧化矽填料、氧化鈦填料、苯乙烯填料、丙烯酸填料、三聚氰胺填料或各種鈦酸鹽等。電容器用 膜中,可使用氧化鈦、鈦酸鎂、鈦酸鋅、鈦酸鉍、氧化鑭、鈦酸鈣、鈦酸鍶、鈦酸鋇、鈦酸鋯酸鋇、鈦酸鋯酸鉛及該等之混合物等。接著膜中,可含有聚合物系之橡膠粒子、聚矽氧橡膠粒子等。各向異性導電膜中,可含有導電粒子。作為導電粒子,可列舉:鎳、鈷、銀、銅、金、鈀等金屬粒子、焊料等合金粒子、金屬被覆樹脂粒子、表面附著有絕緣性微粒子之金屬被覆樹脂粒子等。亦可將2種以上併用。其中,就於連接之後藉由樹脂粒子回彈而容易維持與端子之接觸、導通性能穩定之方面而言,較佳為金屬被覆樹脂粒子。又,對導電粒子之表面亦可藉由公知之技術實施不對導通特性帶來障礙之絕緣處理。上述按照用途而列舉之填料並不限定於該用途,亦可視需要而含有其他用途之含有填料之膜。又,各用途之含有填料之膜中,可視需要將2種以上填料併用。 Fillers 1A and 1B can be selected from known inorganic fillers (metals, metal oxides, metal nitrides, etc.), organic fillers (resin particles, rubber particles, etc.), organic materials mixed with inorganic fillers, etc., according to the application of the film containing the filler. Fillers of materials (for example, particles whose centers are formed of resin materials and whose surfaces are plated with metal (metal-coated resin particles), those formed by attaching insulating fine particles to the surfaces of conductive particles, and those formed by insulating the surfaces of conductive particles It is appropriately selected according to the properties required by the application such as hardness and optical properties. For example, in optical films or matte films, silica fillers, titanium oxide fillers, styrene fillers, acrylic fillers, melamine fillers, various titanates and the like can be used. In the film for capacitors, titanium oxide, magnesium titanate, zinc titanate, bismuth titanate, lanthanum oxide, calcium titanate, strontium titanate, barium titanate, barium titanate zirconate, lead titanate zirconate, and the like can be used. etc. mixture. The following film may contain polymer-based rubber particles, polysiloxane rubber particles, and the like. The anisotropic conductive film may contain conductive particles. Examples of the conductive particles include metal particles such as nickel, cobalt, silver, copper, gold, and palladium, alloy particles such as solder, metal-coated resin particles, and metal-coated resin particles having insulating fine particles adhered to the surface. You may use 2 or more types together. Among them, metal-coated resin particles are preferred in terms of easily maintaining contact with the terminal due to the rebound of the resin particles after connection and stable conduction performance. In addition, the surface of the conductive particles may be subjected to an insulating treatment that does not impede the conduction characteristics by a known technique. The above-mentioned fillers listed by application are not limited to this application, and films containing fillers for other applications may also be included as needed. Moreover, in the film containing a filler for each application, two or more types of fillers may be used in combination as necessary.

填料之形狀可根據含有填料之膜之用途,自球形、橢圓球、柱狀、針狀、該等之組合等中適當選擇而決定。就容易確認填料配置、容易維持均等之狀態之方面而言,較佳為球形。尤其是於將含有填料之膜作為各向異性導電膜構成之情形時,較佳為作為填料之導電粒子為大致真球。藉由使用大致真球作為導電粒子,例如於如日本特開2014-60150號公報記載般使用轉印模具製造排列有導電粒子之各向異性導電膜時,導電粒子會於轉印模具上順利地滾動,因而可將導電粒子高精度填充於轉印模具上之特定之位置。因此,可精確地配置導電粒子。 The shape of the filler can be appropriately selected from spherical, ellipsoidal, columnar, needle-like, a combination of these, and the like according to the application of the film containing the filler. The spherical shape is preferable in that it is easy to confirm the arrangement of the fillers and to maintain a uniform state. In particular, when the film containing the filler is constituted as an anisotropic conductive film, it is preferable that the conductive particles as the filler be substantially spherical. By using substantially true spheres as conductive particles, for example, as described in Japanese Patent Laid-Open No. 2014-60150, when a transfer mold is used to manufacture an anisotropic conductive film in which conductive particles are arranged, the conductive particles are smoothly deposited on the transfer mold. By rolling, the conductive particles can be filled in specific positions on the transfer mold with high precision. Therefore, the conductive particles can be precisely arranged.

關於填料1A、1B之粒徑DA、DB,為了應對配線高度之不均,又,為了抑制導通電阻之上升且抑制短路之產生,較佳為1μm以上且30μm以下,更佳為3μm以上且9μm以下。 The particle diameters DA and DB of the fillers 1A and 1B are preferably 1 μm or more and 30 μm or less, more preferably 3 μm or more and 9 μm in order to cope with the unevenness of the wiring height, and in order to suppress the increase in the on-resistance and the occurrence of short circuits. the following.

第1填料層之填料1A之粒徑與第2填料層之填料1B之粒徑可相同亦可不同。於將含有填料之膜作為各向異性導電膜構成之情形時,就使作為導電粒子之填料1A、1B兩者之各向異性導電連接後之扁平率等壓縮狀態、尤其是 於導電粒子為金屬被覆樹脂粒子之情形時該等之壓縮狀態相同而使導通性能穩定之方面而言,較佳為設為相同。又,填料1A與填料1B之材質或硬度(例如,壓縮彈性模數等)可相同亦可不同。 The particle size of the filler 1A of the first filler layer and the particle size of the filler 1B of the second filler layer may be the same or different. When the film containing the filler is constituted as an anisotropic conductive film, the flatness after the anisotropic conductive connection of the conductive particles 1A and 1B is compressed, especially when the conductive particles are metal. In the case of covering the resin particles, it is preferable to set the same compression state to stabilize the conduction performance. In addition, the material and hardness (for example, compressive elastic modulus, etc.) of the filler 1A and the filler 1B may be the same or different.

再者,填料1A、1B之粒徑可藉由一般之粒度分佈測量裝置進行測量,又,平均粒徑亦可使用粒度分佈測量裝置而求出。作為測量裝置,可列舉FPIA-3000(Malvern公司)作為一例。膜中之填料直徑可根據利用金屬顯微鏡之觀察或SEM等電子顯微鏡觀察而求出。於此情形時,較理想為將測量填料直徑之樣品數設為200以上。又,於填料之形狀不為球形之情形時,可基於含有填料之膜之平面圖像或剖面圖像將最大長度或模仿成球形之形狀之直徑設為填料之粒徑。 In addition, the particle diameters of fillers 1A and 1B can be measured by a general particle size distribution measuring device, and the average particle diameter can also be determined using a particle size distribution measuring device. As a measuring apparatus, FPIA-3000 (Malvern Corporation) can be mentioned as an example. The diameter of the filler in the film can be determined by observation with a metal microscope or observation with an electron microscope such as SEM. In this case, the number of samples for measuring the diameter of the filler is preferably 200 or more. In addition, when the shape of the filler is not spherical, the maximum length or the diameter of the spherical shape can be set as the particle size of the filler based on the plane image or cross-sectional image of the film containing the filler.

<膜厚方向之填料之位置> <Position of filler in film thickness direction>

關於填料1A、1B之膜厚方向之位置,圖1B中表示第1填料層之填料1A自樹脂層2之一表面2a露出、第2填料層之填料1B自另一表面2b露出的態樣,但本發明包含如下樣態:第1填料層之填料1A自樹脂層2之一表面2a露出、或填料1A完全埋入於樹脂層2內但位於接近於樹脂層2之表面2a之位置,又,第2填料層之填料1B自樹脂層2之另一表面2b露出、或第2填料層之填料1B完全埋入於樹脂層2內但位於接近於樹脂層2之表面2b之位置。此處,所謂填料1A、1B完全埋入於樹脂層2但位於其表面2a、2b之附近,作為一例,係指填料1A、1B不自樹脂層2露出且後文所述之埋入率為110%以下、較佳為105%以下之情形。若填料1A、1B自樹脂層2之表面2a、2b露出,則填料1A、1B之粒徑可相同亦可不同。於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,作為導電粒子之填料1A、1B之捕捉性明顯提升,因而較佳。又,若填料1A、1B埋入於樹脂層2內且接近於其表面2a、2b,則無損填料1A、1B之捕捉性而提升含有填料之膜之黏性,因而較佳。尤其是若填料1A、1B以未達0.1μm接近於樹脂層2之表 面2a、2b,則無損黏性而提升填料1A、1B之捕捉性,因而較佳。又,較佳為填料之個數密度為5000個/mm2以上或者面積佔有率2%以上之填料層將填料1A、1B埋入於樹脂層2內且與樹脂層2之表面2a、2b為大致同一平面。藉此,與填料自樹脂層露出之情形時相比,含有填料之膜之黏性不會降低,且與埋入率超過100%而填料完全埋入之情形相比,於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,作為導電粒子之填料不易受到樹脂流動之影響,捕捉性提升。與此相對,若第1填料層及第2填料層之任一者均不自樹脂層2露出且亦不位於樹脂層2之表面2a、2b之附近,則於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,作為導電粒子之填料容易受到樹脂流動之影響,擔憂捕捉性之降低。或者,由於填料附近之樹脂排除難以變得均一,故而亦擔憂對填料之壓入造成不良影響。此種情況於除各向異性導電膜以外之含有填料之膜中,亦可謂相同。 Regarding the positions of the fillers 1A and 1B in the film thickness direction, FIG. 1B shows a state where the filler 1A of the first filler layer is exposed from one surface 2a of the resin layer 2 and the filler 1B of the second filler layer is exposed from the other surface 2b, However, the present invention includes the following aspects: the filler 1A of the first filler layer is exposed from a surface 2a of the resin layer 2, or the filler 1A is completely embedded in the resin layer 2 but is located at a position close to the surface 2a of the resin layer 2, and The filler 1B of the second filler layer is exposed from the other surface 2b of the resin layer 2 , or the filler 1B of the second filler layer is completely embedded in the resin layer 2 but located close to the surface 2b of the resin layer 2 . Here, the fillers 1A and 1B are completely embedded in the resin layer 2 but are located near the surfaces 2a and 2b. As an example, it means that the fillers 1A and 1B are not exposed from the resin layer 2 and the embedding rate described later is 110% or less, preferably 105% or less. If the fillers 1A, 1B are exposed from the surfaces 2a, 2b of the resin layer 2, the particle sizes of the fillers 1A, 1B may be the same or different. When the film containing the filler is constituted as an anisotropic conductive film, the trapping properties of the fillers 1A and 1B as conductive particles are remarkably improved during anisotropic conductive connection, which is preferable. Moreover, if the fillers 1A and 1B are embedded in the resin layer 2 and are close to the surfaces 2a and 2b thereof, the catching properties of the fillers 1A and 1B are not impaired and the viscosity of the film containing the fillers is improved, which is preferable. In particular, if the fillers 1A and 1B are not close to the surfaces 2a and 2b of the resin layer 2 by less than 0.1 μm, it is preferable to increase the capturing properties of the fillers 1A and 1B without losing the viscosity. In addition, it is preferable that the number density of the fillers is 5000 pieces/mm 2 or more or that the area occupancy rate is 2% or more. Fillers 1A and 1B are embedded in the resin layer 2 and the surfaces 2a and 2b of the resin layer 2 are roughly the same plane. Thereby, compared with the case where the filler is exposed from the resin layer, the viscosity of the film containing the filler does not decrease, and compared with the case where the filling rate exceeds 100% and the filler is completely embedded, the film containing the filler is When constituted as an anisotropic conductive film, at the time of anisotropic conductive connection, the filler as the conductive particle is not easily affected by the flow of the resin, and the capture property is improved. On the other hand, if neither of the first filler layer nor the second filler layer is exposed from the resin layer 2 and is not located in the vicinity of the surfaces 2a and 2b of the resin layer 2, the film containing the filler is used as an isotropic film. When an anisotropic conductive film is constituted, the filler as conductive particles is easily affected by resin flow during anisotropic conductive connection, and there is a concern that the capture property may be lowered. Alternatively, since it is difficult to uniformly remove the resin in the vicinity of the filler, there is a concern that it will adversely affect the press-fitting of the filler. The same can be said for films containing fillers other than the anisotropic conductive film.

第1填料層內鄰接之填料1A彼此之中間部之自樹脂層2之表面2a之切平面至填料1A之最深部的距離(以下,稱為埋入量)L1與填料1A之粒徑DA之比率(L1/DA)即埋入率較佳為30%以上且110%以下,更佳為30%以上且105%以下,進而較佳為超過30%且100%以下,尤佳為60%以上且100%以下。同樣,關於第2填料層之填料1B,鄰接之填料1B彼此之中間部之自樹脂層2之表面2b之切平面至填料1B之最深部的距離(埋入量)L2與填料1B之粒徑DB之比率(L2/DB)即埋入率亦較佳為30%以上且110%以下,更佳為30%以上且105%以下,進而較佳為超過30%且100%以下,尤佳為60%以上且100%以下。藉由將埋入率(L1/DA)、(L2/DB)設為30%以上,容易藉由樹脂層2以特定之規則配置或特定之排列維持填料1A、1B,又,藉由設為110%以下、較佳為105%以下,於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,不易因樹脂之流動而引起端子間之作為導電粒子之填料無用地流動。又, 於含有填料之膜中,藉由使填料於樹脂層2中之埋入率一致,可期待其特性提升之效果。作為一例,於光學膜之性能依存於填料之情形時,若具有俯視下之分散性(獨立性)且埋入狀態具有一定以上之規則性,則推測與將經單純混練之黏合劑進行塗佈等所獲得者相比,可獲得性能之提升或品質之穩定性。 The distance between the intermediate portion of the adjacent fillers 1A in the first filler layer from the tangent plane of the surface 2a of the resin layer 2 to the deepest portion of the filler 1A (hereinafter, referred to as the amount of embedding) L1 and the particle size DA of the filler 1A The ratio (L1/DA), that is, the burying rate, is preferably 30% or more and 110% or less, more preferably 30% or more and 105% or less, more preferably more than 30% and 100% or less, particularly preferably 60% or more and below 100%. Similarly, regarding the filler 1B of the second filler layer, the distance (embedding amount) L2 from the tangent plane of the surface 2b of the resin layer 2 to the deepest part of the filler 1B in the intermediate portion of the adjacent fillers 1B and the particle size of the filler 1B The ratio of DB (L2/DB), that is, the burying rate is also preferably 30% or more and 110% or less, more preferably 30% or more and 105% or less, still more preferably more than 30% and 100% or less, particularly preferably Above 60% and below 100%. By setting the burying ratios (L1/DA) and (L2/DB) to 30% or more, it is easy to maintain the fillers 1A and 1B in a specific regular arrangement or a specific arrangement by the resin layer 2. 110% or less, preferably 105% or less, when the film containing the filler is constituted as an anisotropic conductive film, it is difficult to cause the flow of resin to cause conductive particles between terminals during anisotropic conductive connection. The filler flows uselessly. Moreover, in the film containing a filler, by making the embedding rate of the filler in the resin layer 2 uniform, the effect of improving the characteristic can be expected. As an example, when the performance of the optical film depends on the filler, if it has dispersibility (independence) in plan view and the embedded state has more than a certain regularity, it is presumed that the simply kneaded adhesive is applied Compared with the obtained ones, the improvement of performance or the stability of quality can be obtained.

第1填料層之填料1A之埋入率與第2填料層之填料1B之埋入率可相同亦可不同。 The embedding rate of the filler 1A of the first packing layer and the embedding rate of the filler 1B of the second packing layer may be the same or different.

此處,填料直徑DA、DB分別為第1填料層之填料1A、第2填料層之填料1B之填料直徑之平均。 Here, the filler diameters DA and DB are the average of the filler diameters of the filler 1A of the first filler layer and the filler 1B of the second filler layer, respectively.

又,於本發明中,埋入率(L1/DA)、(L2/DB)之數值係指各向異性導電膜等含有填料之膜所包含之所有填料(例如導電粒子)數之80%以上、較佳為90%以上、更佳為96%以上成為該埋入率(L1/DA)、(L2/DB)之數值。埋入率(L1/DA)、(L2/DB)可藉由如下方式而求出:自各向異性導電膜等含有填料之膜任意地選取10處面積30mm2以上之區域,對該膜剖面之一部分進行SEM圖像觀察,對合計50個以上之填料進行測量。為了進一步提升精度,亦可對200個以上之填料進行測量而求出。 Moreover, in the present invention, the numerical values of the burying ratios (L1/DA) and (L2/DB) refer to 80% or more of the total number of fillers (such as conductive particles) contained in films containing fillers such as anisotropic conductive films , is preferably 90% or more, and more preferably 96% or more is the value of the buried ratio (L1/DA) and (L2/DB). The burial ratios (L1/DA) and (L2/DB) can be obtained by arbitrarily selecting 10 regions with an area of 30 mm2 or more from a film containing a filler such as an anisotropic conductive film, and measuring the cross section of the film. SEM image observation was performed for a part, and a total of 50 or more fillers were measured. In order to further improve the accuracy, it can also be obtained by measuring more than 200 fillers.

作為樹脂層2中之填料1A、1B之尤佳之埋入態樣之例,可列舉如下態樣:如圖1B所示,填料1A、1B之雙方之埋入率均為60%以上且100%以下,且填料1A、1B分別自樹脂層2之表面2a、2b露出,且於露出之填料1A、1B之周圍之樹脂層2形成有凹陷2x;或如圖2所示,填料1A、1B之雙方之埋入率均為大約100%,且於樹脂層2之正背,填料1A、1B分別與樹脂層2之表面2a、2b為同一平面,填料1A、1B自樹脂層2之表面2a、2b露出,且於露出之填料1A、1B之周圍之樹脂層2形成有凹陷2x。藉由形成有凹陷2x,於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,針對作為導電粒子之填料1A、1B於端子間被夾持時產生之填料1A、1B之扁平化而自樹脂受到之阻力與無凹陷 2x之情形時相比降低,端子之填料之捕捉性提升。作為含有填料之膜,亦與將經單純混練之黏合劑等進行塗佈所獲得者相比,如上所述,填料及樹脂之狀態具有特異性,因而可期待於性能或品質方面產生特徵。 As an example of a particularly preferable embedding aspect of the fillers 1A and 1B in the resin layer 2, the following aspect can be mentioned: as shown in FIG. % or less, and the fillers 1A, 1B are exposed from the surfaces 2a, 2b of the resin layer 2, respectively, and a depression 2x is formed in the resin layer 2 around the exposed fillers 1A, 1B; or as shown in FIG. 2, the fillers 1A, 1B The embedding rate of both sides is about 100%, and on the front and back of the resin layer 2, the fillers 1A and 1B are respectively on the same plane as the surfaces 2a and 2b of the resin layer 2. The fillers 1A and 1B are from the surface 2a of the resin layer 2. , 2b are exposed, and a recess 2x is formed in the resin layer 2 around the exposed fillers 1A, 1B. By forming the recess 2x, when the film containing the filler is formed as an anisotropic conductive film, the filler 1A and 1B as conductive particles are sandwiched between the terminals during anisotropic conductive connection. The resistance received from the resin by the flattening of the fillers 1A and 1B is reduced compared with the case where there is no depression 2x, and the catchability of the filler of the terminal is improved. As described above, the state of the filler and resin is specific, and it is expected to be characteristic in terms of performance and quality as a film containing a filler, as compared with a film obtained by coating a simply kneaded adhesive or the like.

另一方面,於將含有填料之膜作為各向異性導電膜構成之情形時,於使用各向異性導電膜將電子零件彼此連接時,就不夾帶空氣之方面而言,較佳為如圖3所示,作為導電粒子之填料1A、1B之埋入率為大約100%且以填料分散層3之表面變得平坦之方式使填料1A、1B埋入至樹脂層2。 On the other hand, when the film containing the filler is constituted as an anisotropic conductive film, when connecting electronic parts to each other using the anisotropic conductive film, it is preferable that air is not entrapped, as shown in FIG. 3 . As shown, the filling rate of the fillers 1A and 1B as conductive particles is about 100%, and the fillers 1A and 1B are embedded in the resin layer 2 so that the surface of the filler-dispersed layer 3 becomes flat.

又,於埋入率超過100%之情形時,較佳為如圖4所示,於接近於填料1A、1B之樹脂層2之表面2a、2b之填料1A、1B之正上方之區域形成有凹陷2y。藉由形成凹陷2y,與無凹陷2y之情形時相比,於將含有填料之膜作為各向異性導電膜構成之情形時,各向異性導電連接時之壓力容易集中於作為導電粒子之填料1A、1B,端子之填料1A、1B之捕捉性提升。作為含有填料之膜,亦與將經單純混練之黏合劑等進行塗佈所獲得者相比,如上所述,填料及樹脂之狀態具有特異性,因此可期待於性能或品質方面產生特徵。 In addition, when the burying rate exceeds 100%, as shown in FIG. 4 , it is preferable to form in the region just above the fillers 1A and 1B which are close to the surfaces 2a and 2b of the resin layer 2 of the fillers 1A and 1B. Sag 2y. By forming the depressions 2y, when the film containing the filler is constituted as an anisotropic conductive film, the pressure at the time of anisotropic conductive connection tends to concentrate on the filler 1A as the conductive particles, compared with the case where there is no depression 2y. , 1B, the catchability of the terminal fillers 1A, 1B is improved. As described above, the state of the filler and the resin is specific compared to the film obtained by coating a simply kneaded adhesive or the like as a film containing a filler, and thus can be expected to be characterized in terms of performance and quality.

<填料之排列> <Arrangement of fillers>

於圖1A所示之含有填料之膜10A中,第1填料層之填料1A及第2填料層之填料1B分別以正方格子排列。如此,於本發明之含有填料之膜中,填料1A、1B較佳為規則排列。作為規則排列,除圖1A所示之正方格子以外,還可列舉長方格子、斜方格子、六方格子等格子排列。作為除格子排列以外之規則排列,可列舉將填料以特定間隔直線狀地排列而成之粒子列以特定之間隔並列者。藉由使填料1A、1B成為格子狀等規則之排列,於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,可對作為導電粒子之各填料1A、1B均等地施加壓力,從而降低導通電阻之不均。 In the film 10A containing the filler shown in FIG. 1A , the filler 1A of the first filler layer and the filler 1B of the second filler layer are arranged in a square lattice, respectively. Thus, in the film containing the filler of the present invention, the fillers 1A and 1B are preferably arranged regularly. As the regular arrangement, in addition to the square lattice shown in FIG. 1A , a lattice arrangement such as a rectangular lattice, a rhombic lattice, and a hexagonal lattice can be mentioned. As a regular arrangement other than a lattice arrangement, the particle row|line|column which arrange|positioned the filler linearly at a predetermined space|interval is juxtaposed by predetermined space|interval. By arranging the fillers 1A, 1B in a grid pattern, etc., when the film containing the filler is constituted as an anisotropic conductive film, in the anisotropic conductive connection, the fillers 1A, 1B which are conductive particles can be adjusted. 1B applies pressure evenly, thereby reducing unevenness in on-resistance.

第1填料層中之填料1A之排列與第2填料層中之填料1B之排列可 設為相同亦可設為不同。於設為相同之情形時,例如如圖5A、圖5B所示之含有填料之膜10B般,於含有填料之膜之俯視下,可使第1填料層之填料1A與第2填料層之填料1B不重疊,亦可形成第1填料層之填料1A與第2填料層之填料1B接觸或接近而成之填料單元。於此情形時,填料單元彼此較佳為不接觸而規則排列。藉此,可抑制短路之產生。 The arrangement of the fillers 1A in the first filler layer and the arrangement of the fillers 1B in the second filler layer may be the same or different. When set to the same situation, for example, as shown in FIG. 5A and FIG. 5B as the filler-containing film 10B, in the plan view of the filler-containing film, the filler 1A of the first filler layer and the filler of the second filler layer can be 1B does not overlap, and a filler unit in which the filler 1A of the first filler layer and the filler 1B of the second filler layer are in contact or close to each other may be formed. In this case, the packing units are preferably arranged regularly without contacting each other. Thereby, the occurrence of a short circuit can be suppressed.

例如,可構成如下填料單元:於第1填料層及第2填料層中,填料1A、1B之排列本身相同,但一填料1A之排列相對於另一填料1B之排列於膜面方向錯開特定距離,於含有填料之膜之俯視下,第1填料層之填料1A與第2填料層之填料1B之一部分重疊。於此情形時,若如圖1A所示之含有填料之膜10A之一態樣之各向異性導電膜般,形成填料1A與填料1B部分地重疊而成之填料單元1C,則由於含有填料之膜為各向異性導電膜,故而於各向異性導電連接時,可期待作為導電粒子之填料1A及1B之任一者容易被端子捕捉之效果。即,於使用圖1A所示之含有填料之膜10A之一態樣之各向異性導電膜將第1電子零件30之端子20與第2電子零件31之端子21各向異性導電連接之情形時,若如圖6所示,填料1A位於端子20、21之邊緣,則於含有填料之膜(各向異性導電膜)之俯視下,填料1B存在於與填料1A重疊之位置,因而於加熱加壓時,即便填料1A或1B產生位置偏離,亦藉由鄰接之填料1A、1B之任一者將端子20、21連接,從而可提高端子之填料之捕捉性。又,於此情形時,若於加熱加壓時產生樹脂流動,則填料1A與1B之距離會變遠,因而產生短路之風險亦會降低。再者,如上所述使填料1A與1B部分地重疊係基於含有填料之膜之一態樣之各向異性導電膜整體中之填料直徑或個數密度、填料間之距離、連接之端子尺寸或端子間距離等,以即便使填料1A與1B部分地重疊,設計上亦不會產生短路為前提,若使填料1A與1B部分地重疊,則會滿足短路抑制之效果並且亦容易滿足捕捉性提升之效果,因而較佳。又,於鄰接之填料1A、1B分別與樹脂層2之正背之面2a、2b成為 大致同一平面之情形時,或自該正背之面2a、2b露出之情形時,該等效果進一步變大,因而較佳。再者,於如上所述將含有填料之膜作為各向異性導電膜構成之情形時,即便假設於上述含有填料之膜中第1填料層之填料1A與第2填料層之填料1B於膜厚方向完全重疊,亦存在若用於各向異性導電連接,則因各向異性導電連接時之加熱加壓而產生樹脂之熔融或流動之情況,重疊之填料1A、1B之位置會錯開,因而實用上無問題。於除各向異性導電膜以外之態樣中,亦可謂相同。 For example, the following packing unit can be formed: in the first packing layer and the second packing layer, the arrangement of the fillers 1A and 1B is the same, but the arrangement of one filler 1A is shifted by a certain distance in the direction of the film surface relative to the arrangement of the other filler 1B In the plan view of the film containing the filler, the filler 1A of the first filler layer and the filler 1B of the second filler layer partially overlap. In this case, if the filler unit 1C in which the filler 1A and the filler 1B are partially overlapped is formed as in the anisotropic conductive film in the form of the filler-containing film 10A shown in FIG. Since the film is an anisotropic conductive film, an effect that any one of the fillers 1A and 1B serving as conductive particles can be easily captured by the terminals can be expected during anisotropic conductive connection. That is, when the terminal 20 of the first electronic component 30 and the terminal 21 of the second electronic component 31 are anisotropically conductively connected using the anisotropic conductive film of the form of the filler-containing film 10A shown in FIG. 1A 6, if the filler 1A is located at the edge of the terminals 20 and 21, then in the top view of the film (anisotropic conductive film) containing the filler, the filler 1B exists in a position overlapping with the filler 1A. During pressing, even if the packing 1A or 1B is displaced, the terminals 20 and 21 are connected by any one of the adjacent packings 1A and 1B, so that the catchability of the packing of the terminal can be improved. In addition, in this case, if the resin flows during heating and pressurization, the distance between the fillers 1A and 1B will become longer, and thus the risk of short-circuiting will also be reduced. Furthermore, partially overlapping fillers 1A and 1B as described above is based on the diameter or number density of the fillers in the entire anisotropic conductive film of one aspect of the film containing the fillers, the distance between the fillers, the size of the connected terminals or the like. The distance between terminals, etc., is based on the premise that a short circuit will not occur in design even if the fillers 1A and 1B are partially overlapped. If the fillers 1A and 1B are partially overlapped, the effect of short circuit suppression will be satisfied and the catchability improvement will be easily satisfied. effect, so it is better. In addition, when the adjacent fillers 1A, 1B are substantially flush with the front and back surfaces 2a, 2b of the resin layer 2, respectively, or when exposed from the front and back surfaces 2a, 2b, these effects are further changed. large, so it is better. Furthermore, in the case where the film containing the filler is constituted as an anisotropic conductive film as described above, even if it is assumed that the filler 1A of the first filler layer and the filler 1B of the second filler layer in the film containing the filler described above are equal to the thickness of the film The directions are completely overlapped, and if used for anisotropic conductive connection, the resin will melt or flow due to heating and pressure during anisotropic conductive connection, and the positions of overlapping fillers 1A and 1B will be staggered, so practical No problem. The same can be said for the aspects other than the anisotropic conductive film.

另一方面,於使第1填料層之填料1A之排列與第2填料層之填料1B之排列不同之情形時,例如較佳為以雙方之排列之形狀相似等之方式,於排列具有共同點。其並不限定於各向異性導電膜。 On the other hand, when the arrangement of the fillers 1A of the first packing layer and the arrangement of the fillers 1B of the second packing layer are different, for example, it is preferable that the shapes of both arrangements are similar, and the arrangement has a common point. . It is not limited to the anisotropic conductive film.

又,亦可將填料1A之排列與填料1B之排列分別作為規則排列之一部分,使填料1A之排列與填料1B之排列合併形成格子狀等規則排列。例如,於將填料1A之排列與填料1B之排列合併設為六方格子之情形時,填料1A之排列具有六方格子所包含之六邊形之排列,填料1B之排列設為成為該六邊形之中心之排列。再者,該情形之規則排列並不限定於六方格子。又,關於填料1A之排列與填料1B之排列成為將雙方合併所形成之規則排列之哪一個部分,並無限定。使填料1A之排列與填料1B之排列合併所形成之規則排列可相對於精確之格子排列變形,例如,本應成為直線之格子軸可成為鋸齒狀。藉由以此方式設為難以簡單地再現之排列條件,能夠進行批次管理,亦能夠對含有填料之膜及使用其之連接構造體賦予追蹤能力(可追蹤之性質)。其對於防止偽造含有填料之膜或使用其之連接構造體、真偽判定、防止非法利用等亦有效。又,一般,於各向異性導電連接中,有可能產生直線排列之導電粒子之相當數量不會被端子之邊緣部分捕捉之事態,藉由使排列成為鋸齒狀,可避免此種事態。因此,容易使端子之導電粒子之捕捉數保持於固定範圍,故而較佳。又,藉由使此種變 形重複,可利用抽取檢查等容易地判斷排列形狀之適當與否。 In addition, the arrangement of the fillers 1A and the arrangement of the fillers 1B can be respectively used as part of the regular arrangement, and the arrangement of the fillers 1A and the arrangement of the fillers 1B can be combined to form a regular arrangement such as a lattice. For example, when the arrangement of the fillers 1A and the arrangement of the fillers 1B are combined into a hexagonal lattice, the arrangement of the fillers 1A has the arrangement of the hexagons contained in the hexagonal lattice, and the arrangement of the fillers 1B is set to be the arrangement of the hexagons. Arrangement of the center. Furthermore, the regular arrangement in this case is not limited to the hexagonal grid. In addition, there is no limitation as to which part of the regular arrangement formed by combining the arrangement of the fillers 1A and the arrangement of the fillers 1B. The regular arrangement formed by merging the arrangement of packing 1A with the arrangement of packing 1B can be deformed relative to the precise lattice arrangement, for example, the axes of the lattice that should be straight can be zigzag. By setting the arrangement conditions that are difficult to reproduce in this way, batch management can be performed, and traceability (traceability) can be imparted to the film containing the filler and the connection structure using the same. It is also effective for preventing forgery of films containing fillers or connecting structures using the same, for determining authenticity, preventing illegal use, and the like. In addition, in general, in anisotropic conductive connection, there is a possibility that a considerable number of conductive particles arranged in a straight line are not caught by the edge portion of the terminal. This situation can be avoided by making the arrangement in a zigzag shape. Therefore, it is easy to keep the capture number of the conductive particles of the terminal within a fixed range, which is preferable. In addition, by repeating such deformation, it is possible to easily judge whether or not the arrangement shape is appropriate by means of extraction inspection or the like.

再者,如上所述之填料之變形排列可使用一個轉印模具形成,亦可使填料1A用之轉印模具與填料1B用之轉印模具兩個轉印模具組合而形成。藉由使用填料1A用之轉印模具與填料1B用之轉印模具兩個轉印模具形成各向異性導電膜等含有填料之膜整體之填料(例如導電粒子)排列,能夠形成各種排列,亦容易於短時間內應對設計變更,能夠有助於製造成本之削減,進而能夠削減包括用以製造填料之排列不同之各種各向異性導電膜等含有填料之膜之製造裝置之保有、零件管理、維護等所需費用在內的與製造各向異性導電膜等含有填料之膜相關之總成本。本發明可採用如上所述使用填料1A用之轉印模具及填料1B用之轉印模具2種轉印模具設計各向異性導電膜等含有填料之膜整體之俯視下之填料(例如導電粒子)排列狀態的填料排列狀態設計方法、或按照該設計方法使用2種轉印模具之各向異性導電膜等含有填料之膜之製造方法。 Furthermore, the deformed arrangement of the fillers as described above can be formed by using one transfer mold, or by combining two transfer molds for the filler 1A and the transfer mold for the filler 1B. By using the transfer mold for filler 1A and the transfer mold for filler 1B to form an arrangement of fillers (such as conductive particles) in the entire film containing fillers such as anisotropic conductive films, various arrangements can be formed. It is easy to respond to design changes in a short period of time, which can contribute to the reduction of manufacturing costs, and can also reduce the ownership of manufacturing equipment, parts management, and manufacturing equipment for manufacturing films containing fillers, such as various anisotropic conductive films with different arrangements of fillers. The total cost associated with the manufacture of films containing fillers such as anisotropic conductive films, including maintenance and other costs. In the present invention, as described above, two types of transfer molds, a transfer mold for filler 1A and a transfer mold for filler 1B, can be used to design fillers (eg, conductive particles) from a plan view of the entire film containing fillers, such as anisotropic conductive films. A method for designing an arrangement state of fillers in an arrangement state, or a method for producing a film containing a filler such as an anisotropic conductive film using two types of transfer molds according to the design method.

再者,關於填料1A及填料1B,亦可於可獲得含有填料之膜所意圖之發明之效果之範圍內,於其排列狀態中存在缺漏。可藉由於膜之特定之方向規則地存在而進行確認。又,藉由使填料之缺漏於膜之長邊方向反覆存在、或使填料缺漏之部位於膜之長邊方向逐漸增加或減少,可獲得與上述變形相同之效果。即,能夠進行批次管理,亦能夠對含有填料之膜及使用其之連接構造體賦予追蹤能力(可追蹤之性質)。其對於防止偽造含有填料之膜或使用其之連接構造體、真偽判定、防止非法利用等亦有效。 In addition, about the filler 1A and the filler 1B, in the range which can obtain the effect of the invention which the film containing a filler intends, there may be a defect in the arrangement state. It can be confirmed by the regular existence of the specific direction of the film. In addition, the same effect as the above-mentioned modification can be obtained by repeating the lack of fillers in the longitudinal direction of the film, or by increasing or decreasing the number of leaks of the filler in the longitudinal direction of the film. That is, batch management can be performed, and traceability (traceability) can be imparted to the film containing the filler and the connection structure using the same. It is also effective for preventing forgery of films containing fillers or connecting structures using the same, for determining authenticity, preventing illegal use, and the like.

於第1填料層及第2填料層各層中,填料1A、1B之排列之格子軸或排列軸可相對於各向異性導電膜等含有填料之膜10A之長邊方向平行,亦可與各向異性導電膜等含有填料之膜10A之長邊方向交叉。例如,於製成各向異性導電膜之情形時,由於可根據連接之端子寬度、端子間距等而決定,故而無特別限制。例如,於製成微間距用之各向異性導電膜之情形時,如圖1A所示使第1 填料層之填料1A之格子軸A相對於各向異性導電膜等含有填料之膜10A之長邊方向傾斜,將利用各向異性導電膜等含有填料之膜10A進行連接之端子20之長邊方向(膜之短邊方向)與格子軸A所成之角度θ較佳為設為6°~84°,更佳為設為11°~74°。即便為除各向異性導電膜以外之用途,藉由以此方式傾斜,亦可期待能夠使捕捉狀態變穩定之效果。 In each of the first filler layer and the second filler layer, the grid axis or the arrangement axis of the arrangement of the fillers 1A and 1B may be parallel to the longitudinal direction of the filler-containing film 10A such as an anisotropic conductive film, or may be parallel to the direction of the longitudinal direction of the filler-containing film 10A. The longitudinal direction of the film 10A containing a filler, such as an anisotropic conductive film, intersects. For example, in the case of forming an anisotropic conductive film, it is not particularly limited because it can be determined according to the terminal width, terminal pitch, etc. to be connected. For example, in the case of producing an anisotropic conductive film for fine pitches, as shown in FIG. 1A, the lattice axis A of the filler 1A of the first filler layer is set to the length of the film 10A containing the filler such as the anisotropic conductive film The side direction is inclined, and the angle θ formed by the long side direction (the short side direction of the film) of the terminal 20 connected by the film 10A containing a filler such as an anisotropic conductive film and the lattice axis A is preferably set to 6°~ 84°, more preferably 11° to 74°. Even in applications other than the anisotropic conductive film, by inclining in this way, the effect that the capture state can be stabilized can be expected.

填料1A、1B之粒子間距離可根據有無形成填料(例如導電粒子)單元1C、利用各向異性導電膜等含有填料之膜進行連接之端子之大小、端子間距等適當決定。例如,關於第1填料層內相鄰之填料1A彼此之最接近粒子間距離L3及第2填料層內相鄰之填料1B彼此之最接近粒子間距離L4(圖1A),於各向異性導電膜之情形時,於該相鄰之作為導電粒子之填料1A及1B不屬於一個填料單元(導電粒子單元)之情形時,就抑制短路之觀點而言,較佳為填料1A、1B之粒徑DA、DB之1.5倍以上,又,就最低限度地確保端子之填料之捕捉數、獲得穩定之導通之方面而言,較佳為設為66倍以下。尤其是於將含有填料之膜作為各向異性導電膜構成之情形時,於使各向異性導電膜應對微間距之COG(Chip On Glass,玻璃覆晶)時,最接近粒子間距離L3、L4較佳為設為粒徑之1.5~5倍,於應對間距相對較大之FOG(Film On Glass,鍍膜玻璃)之情形時,較佳為設為粒徑之10~66倍。於除各向異性導電膜以外之情形時,根據其特性適當調整即可。 The distance between the particles of the fillers 1A and 1B can be appropriately determined depending on whether or not the filler (eg, conductive particle) unit 1C is formed, the size of the terminals to be connected by a film containing a filler such as an anisotropic conductive film, and the terminal pitch. For example, regarding the distance L3 between the nearest particles of the adjacent fillers 1A in the first filler layer and the distance L4 between the nearest particles of the adjacent fillers 1B in the second filler layer ( FIG. 1A ), the anisotropic conductive In the case of a film, when the adjacent fillers 1A and 1B serving as conductive particles do not belong to one filler unit (conductive particle unit), the particle size of the fillers 1A and 1B is preferred from the viewpoint of suppressing short circuits. 1.5 times or more of DA and DB, and 66 times or less is preferable in terms of securing the minimum number of traps in the terminal packing and obtaining stable conduction. In particular, when a film containing a filler is formed as an anisotropic conductive film, when the anisotropic conductive film is adapted to micro-pitch COG (Chip On Glass, chip-on-glass), the distances between particles L3 and L4 are closest to each other. It is preferable to set it as 1.5~5 times of the particle size, and when dealing with the case of FOG (Film On Glass, coated glass) with a relatively large pitch, it is preferable to set it as 10~66 times of the particle size. In cases other than the anisotropic conductive film, it may be appropriately adjusted according to the characteristics.

再者,如下文所述,於利用第1填料層內之多個填料1A形成填料單元1C之情形時、或利用第2填料層內之多個填料1B形成填料單元1C之情形時,於含有填料之膜之一態樣之各向異性導電膜時,1個填料單元1C內之第1填料層之填料1A彼此之距離較佳為設為填料1A之粒徑DA之1/4倍以下,填料1A彼此亦可相接。同樣地,1個填料單元1C內之第2填料層之填料1B彼此之距離較佳為設為填料1B之粒徑DB之1/4倍以下,填料1B彼此亦可相接。於除各向異性導 電膜以外之情形時,根據其特性適當調整即可。 Furthermore, as described below, when the packing unit 1C is formed by using the plurality of fillers 1A in the first packing layer, or when the packing unit 1C is formed by using the plurality of fillers 1B in the second packing layer, the In the case of the anisotropic conductive film, which is one aspect of the filler film, the distance between the fillers 1A of the first filler layer in one filler unit 1C is preferably set to be 1/4 times or less the particle size DA of the filler 1A, The fillers 1A may be in contact with each other. Similarly, the distance between the fillers 1B of the second filler layer in one filler unit 1C is preferably set to be 1/4 times or less the particle size DB of the fillers 1B, and the fillers 1B may be in contact with each other. In cases other than the anisotropic conductive film, it can be appropriately adjusted according to its characteristics.

<填料之個數密度> <Number density of fillers>

本發明之含有填料之膜整體之填料之個數密度由於可根據其用途或所要求之特性及填料1A、1B之粒徑、排列等進行適當調整,故而並無特別限定,可應用下述各向異性導電膜之情形。含有填料之膜之製造條件由於與各向異性導電膜之情形大致相同,故而可認為填料之個數密度之條件亦大致相同。於將含有填料之膜作為各向異性導電膜構成之情形時,可根據以各向異性導電膜進行連接之電子零件之端子之間距、各向異性導電膜之填料(導電粒子)1A、1B之粒徑、排列等進行適當調整。例如關於個數密度之上限,為了抑制短路,較佳為70000個/mm2以下,更佳為50000個/mm2以下,進而更佳為35000個/mm2以下。另一方面,關於個數密度之下限,為了抑制成本,亦為了削減填料(導電粒子)且滿足導通性能,較佳為100個/mm2以上,更佳為150個/mm2以上,進而更佳為400個/mm2以上。尤其是設為以各向異性導電膜進行連接之電子零件之最小之端子之連接面積為2000μm2以下的微間距用途之情形時,較佳為10000個/mm2以上。第1填料層之填料1A之設計上之個數密度與第2填料層之填料1B之設計上之個數密度可相同,亦可不同。 The number density of the filler in the entire film containing the filler of the present invention can be appropriately adjusted according to its application or required properties, as well as the particle size and arrangement of the fillers 1A and 1B, and is therefore not particularly limited. The case of anisotropic conductive films. Since the manufacturing conditions of the film containing a filler are substantially the same as the case of the anisotropic conductive film, it can be considered that the conditions of the number density of the filler are also substantially the same. When the film containing the filler is formed as an anisotropic conductive film, the distance between the terminals of the electronic parts connected by the anisotropic conductive film and the distance between the fillers (conductive particles) 1A and 1B of the anisotropic conductive film can be determined. The particle size, arrangement, etc. are appropriately adjusted. For example, in order to suppress short circuits, the upper limit of the number density is preferably 70,000 pieces/mm 2 or less, more preferably 50,000 pieces/mm 2 or less, and still more preferably 35,000 pieces/mm 2 or less. On the other hand, the lower limit of the number density is preferably 100 pieces/mm 2 or more, more preferably 150 pieces/mm 2 or more, in order to suppress cost, reduce fillers (conductive particles), and satisfy conduction performance. Preferably, it is 400 pieces/mm 2 or more. In particular, in the case of a fine-pitch application where the connection area of the smallest terminal of the electronic components connected by the anisotropic conductive film is 2000 μm 2 or less, it is preferably 10,000 pieces/mm 2 or more. The design number density of the filler 1A of the first packing layer and the design number density of the filler 1B of the second packing layer may be the same or different.

於製造含有填料之膜時,於使填料於含有填料之膜之長邊方向附著之情形時,於存在填料之缺漏或分佈之不均一性不可避免地增加之傾向時,較佳為第1填料層之填料1A之個數密度及第2填料層之填料1B之個數密度之一者於含有填料之膜之長邊方向逐漸增加,並且另一者逐漸減少,即,個數密度之增加或減少之方向於第1填料層及第2填料層成為相反方向。於使各向異性導電膜等含有填料之膜整體中之第1填料層之填料1A之個數密度之平均相同之情形時,藉由如上所述使填料之個數密度逐漸增加或減少,於含有填料之膜之一端10Ap及另一端10Aq,第1填料層之填料1A之個數密度與第2填料層之填料1B之個 數密度之大小關係相反,含有填料之膜整體中之填料之個數密度之均一性提升。其於如各向異性導電膜般強烈要求整個面中之填料之個數密度之均一性之情形時,製造難易度降低,因而可期待其效果。又,各向異性導電膜或除此以外之用途中均同樣地可期待成本削減之效果。 When the filler-containing film is produced, when the filler is adhered to the longitudinal direction of the filler-containing film, when there is a tendency for the omission of the filler or the uneven distribution of the filler to inevitably increase, the first filler is preferred. One of the number density of the filler 1A of the layer and the number density of the filler 1B of the second filler layer gradually increases in the longitudinal direction of the film containing the filler, and the other gradually decreases, that is, an increase in the number density or The decreasing direction is the opposite direction in the first packing layer and the second packing layer. In the case where the average number density of the filler 1A in the first filler layer in the entire film containing the filler, such as an anisotropic conductive film, is the same, the number density of the filler is gradually increased or decreased as described above. One end 10Ap and the other end 10Aq of the film containing the filler, the number density of the filler 1A of the first filler layer and the number density of the filler 1B of the second filler layer are opposite, and one of the fillers in the whole film containing the filler The uniformity of number density is improved. In the case where the uniformity of the number density of the fillers in the entire surface is strongly required like an anisotropic conductive film, the difficulty of manufacture is reduced, and thus its effect can be expected. Moreover, the effect of cost reduction can be similarly anticipated in the anisotropic conductive film and other applications.

各向異性導電膜等含有填料之膜之長邊方向之第1填料層或第2填料層中之填料之個數密度可藉由如下方式而求出:於含有填料之膜之長邊方向上在成為膜總長之20%以上或3m以上之區域內,於含有填料之膜之長邊方向之不同位置設定多處(較佳為5處以上、更佳為10處以上)1邊為100μm以上之矩形區域作為填料之個數密度之測量區域,將測量區域之合計面積較佳為設為2mm2以上,使用金屬顯微鏡測量各測量區域之填料之個數密度,並將該等進行平均,或拍攝上述膜總長之20%以上或3m以上之區域內之圖像,藉由圖像分析軟體(例如WinROOF,三谷商事股份有限公司等)測量填料之個數密度;又,填料之個數密度逐漸增加或減少可藉由於各測量區域所測得之填料之個數密度相對於各向異性導電膜等含有填料之膜之長邊方向單調遞增或遞減而進行確認。再者,面積100μm×100μm區域於凸塊間間隔50μm以下之連接對象物中成為存在1個以上凸塊之區域。再者,測量區域可根據填料之個數密度適當調整該測量區域之1邊之上限。於明顯較密或者較疏之情形時,例如可以填料個數以合計面積之總數計成為200個以上、較佳為1000個以上之方式進行調整。 The number density of the fillers in the first filler layer or the second filler layer in the longitudinal direction of the film containing fillers such as anisotropic conductive films can be obtained by the following method: in the longitudinal direction of the film containing fillers In a region that is 20% or more of the total length of the film or 3 m or more, a plurality of positions (preferably 5 or more, more preferably 10 or more) are set at different positions in the longitudinal direction of the film containing the filler to be 100 μm or more on one side the rectangular region as a measurement of the area number density of the filler, the total area of the measurement area is preferably set to 2mm 2 or more, using a metal microscope, measuring the number density of the filler measured in each area, and such averaging, or Take an image of the area of more than 20% of the total length of the film or more than 3m, and measure the number density of fillers by image analysis software (such as WinROOF, Sangu Shoji Co., Ltd., etc.). Moreover, the number density of fillers gradually The increase or decrease can be confirmed by monotonically increasing or decreasing the number density of the filler measured in each measurement area with respect to the longitudinal direction of the film containing the filler such as an anisotropic conductive film. In addition, the area|region of 100 micrometers x 100 micrometers becomes the area|region where one or more bumps exist in the connection object with the inter-bump space|interval 50 micrometers or less. Furthermore, the upper limit of one side of the measurement area can be appropriately adjusted according to the number density of the filler. In the case where it is obviously dense or sparse, for example, the number of fillers can be adjusted to be 200 or more, preferably 1,000 or more in terms of the total area of the filler.

於將含有填料之膜作為各向異性導電膜構成之情形時,於將各向異性導電膜設為以該各向異性導電膜連接之電子零件之最小之端子之連接面積為2000μm2以下之微間距用途時,含有填料之膜(各向異性導電膜)之一端10Ap上之第1填料層與第2填料層合計之填料1A、1B之個數密度NpAB與另一端10Aq上之第1填料層與第2填料層合計之填料1A、1B之個數密度NqAB的差(NpAB-NqAB),相對於該等之平均((NpAB+NqAB)/2)較佳為±2%以內, 更佳為±1.5%以內,進而更佳為±1%以內,於最小之端子之連接面積超過2000μm2之常規間距之情形時,(NpAB-NqAB)相對於((NpAB+NqAB)/2)較佳為±20%以內,更佳為±10%以內。 When the film containing the filler is constituted as an anisotropic conductive film, the connection area of the smallest terminal of the electronic component connected by the anisotropic conductive film is 2000 μm 2 or less. For spacing application, the number density of fillers 1A and 1B in total of the first filler layer and the second filler layer on one end 10Ap of the film (anisotropic conductive film) containing fillers NpAB and the first filler layer on the other end 10Aq The difference (NpAB-NqAB) of the number density NqAB of the fillers 1A and 1B in total with the second filler layer is preferably within ±2% with respect to the average ((NpAB+NqAB)/2), more preferably Within ±1.5%, more preferably within ±1%, when the connection area of the smallest terminal exceeds the conventional spacing of 2000 μm 2 , (NpAB-NqAB) is preferably relative to ((NpAB+NqAB)/2) Within ±20%, more preferably within ±10%.

於將第1填料層及第2填料層中設計上之填料之排列及個數密度設為相同之情形時,作為於樹脂層2形成第1填料層及第2填料層之步驟,就製造上而言,較佳為如下文所述,於使成為第1填料層之填料1A附著於樹脂層2時、及於使成為第2填料層之填料1B附著於樹脂層2時,使樹脂層2之移行方向相反,重複同一步驟。以此方式使移行方向相反就如下方面而言亦較佳:於假如於用於附著填料之轉印模具存在缺陷之情形時,各向異性導電膜等含有填料之膜上之缺陷之位置於膜之正背不重疊,可避免膜整體變得不良之風險。 When the arrangement and number density of the designed fillers in the first filler layer and the second filler layer are set to be the same, as the step of forming the first filler layer and the second filler layer on the resin layer 2, the manufacturing process is performed. More preferably, as described below, when the filler 1A serving as the first filler layer is adhered to the resin layer 2 and when the filler 1B serving as the second filler layer is adhered to the resin layer 2, the resin layer 2 is preferably If the direction of movement is opposite, repeat the same step. Reversing the direction of travel in this way is also preferable in that, if there is a defect in the transfer mold for attaching the filler, the position of the defect on the film containing the filler such as the anisotropic conductive film is located in the film The front and back do not overlap, which can avoid the risk of the whole film becoming defective.

另一方面,於使第1填料層與第2填料層之填料1A、1B之個數密度不同之情形時,就提高端子之填料之捕捉性之方面而言,較佳為將該等之中個數密度較高之填料層設為更接近於各向異性導電膜等含有填料之膜之外界面之位置。又,於使填料層露出各向異性導電膜等含有填料之膜之外表面之情形時,就抑制各向異性導電膜等含有填料之膜之黏性之降低之方面而言,露出之填料層較佳為設為個數密度較低者(個數密度較低之側)。如此,含有填料之膜可根據所要求之特性適當使第1填料層與第2填料層之填料1A、1B之個數密度不同。 On the other hand, when the number densities of the fillers 1A and 1B of the first filler layer and the second filler layer are made different, from the viewpoint of improving the catchability of the filler of the terminal, it is preferable to use one of these fillers. The filler layer with a higher number density is set closer to the position of the outer interface of the film containing the filler, such as the anisotropic conductive film. In addition, when the filler layer is exposed to the outer surface of a film containing a filler such as an anisotropic conductive film, the exposed filler layer is required to suppress a decrease in the viscosity of the film containing a filler such as an anisotropic conductive film. It is preferable to set it as the one with the lower number density (the side with the lower number density). In this way, in the film containing the filler, the number density of the fillers 1A and 1B of the first filler layer and the second filler layer can be appropriately made different according to the required properties.

<樹脂層> <Resin layer>

(樹脂層之黏度) (viscosity of resin layer)

樹脂層2之最低熔融黏度並無特別限制,可根據含有填料之膜之用途、或含有填料之膜之製造方法等適當決定。例如,只要可形成上述凹陷2x、2y,則視含有填料之膜之製造方法,亦可設為1000Pa‧s左右。另一方面,作為含有填料之膜之製造方法,於進行使填料以特定之配置保持於樹脂層之表面並將該填料 壓入至樹脂層之方法時,就樹脂層能夠成形為膜之方面而言,較佳為將樹脂之最低熔融黏度設為1100Pa‧s以上。凹陷2x、2y可位於兩面,亦可僅位於單面(即,填料1A、1B之任一者)。 The minimum melt viscosity of the resin layer 2 is not particularly limited, and can be appropriately determined according to the application of the filler-containing film, the manufacturing method of the filler-containing film, and the like. For example, as long as the above-mentioned depressions 2x and 2y can be formed, it may be set to about 1000 Pa·s depending on the manufacturing method of the film containing the filler. On the other hand, as a method for producing a film containing a filler, when a method of holding the filler on the surface of the resin layer in a specific arrangement and pressing the filler into the resin layer is performed, the resin layer can be formed into a film. In other words, it is preferable to set the minimum melt viscosity of the resin to 1100 Pa·s or more. The recesses 2x and 2y may be located on both sides or only on one side (ie, either of the fillers 1A, 1B).

又,如下文所述之含有填料之膜之製造方法中所說明,就如圖1B所示於壓入至樹脂層2之填料1A、1B之露出部分之周圍形成凹陷2x、或如圖4所示於壓入至樹脂層2之填料1A、1B之正上方形成凹陷2y之方面而言,較佳為1500Pa‧s以上,更佳為2000Pa‧s以上,進而較佳為3000~15000Pa‧s,進而更佳為3000~10000Pa‧s。關於該最低熔融黏度,作為一例,可使用旋轉式流變計(TA instruments公司製造),在測量壓力5g下保持為固定,使用直徑8mm之測量板而求出,更具體而言,可藉由於溫度範圍30~200℃中,設為升溫速度10℃/min、測量頻率10Hz、對上述測量板之荷重變動5g而求出。 Further, as described in the method for producing a film containing a filler described below, a depression 2x is formed around the exposed portions of the fillers 1A and 1B pressed into the resin layer 2 as shown in FIG. 1B , or as shown in FIG. 4 . In terms of forming the depressions 2y directly above the fillers 1A and 1B pressed into the resin layer 2, it is preferably 1500 Pa·s or more, more preferably 2000 Pa·s or more, and still more preferably 3000 to 15000 Pa·s, More preferably, it is 3000-10000 Pa·s. As an example, the minimum melt viscosity can be obtained by using a rotary rheometer (manufactured by TA instruments), keeping it constant under a measuring pressure of 5 g, and using a measuring plate with a diameter of 8 mm. In the temperature range of 30 to 200° C., the temperature increase rate was 10° C./min, the measurement frequency was 10 Hz, and the load on the measurement plate was changed by 5 g.

藉由將樹脂層2之最低熔融黏度設為1500Pa‧s以上之高黏度,可抑制將含有填料之膜壓接於物品時填料之無用之移動,尤其是於將含有填料之膜設為各向異性導電膜之情形時,可防止於各向異性導電連接時,應夾持於端子間之導電粒子因樹脂流動而流走。 By setting the minimum melt viscosity of the resin layer 2 to a high viscosity of 1500 Pa·s or more, the useless movement of the filler when the film containing the filler is crimped to the article can be suppressed, especially when the film containing the filler is set in all directions In the case of the anisotropic conductive film, the conductive particles that should be held between the terminals can be prevented from flowing away due to the resin flow during the anisotropic conductive connection.

又,於藉由將填料1A、1B壓入至樹脂層2而形成含有填料之膜10A之填料分散層3之情形時,壓入填料1A、1B時之樹脂層2係設為如下高黏度之黏性體:於以填料1A、1B自樹脂層2露出之方式將填料1A、1B壓入至樹脂層2時,樹脂層2塑性變形,於填料1A、1B之周圍之樹脂層2形成凹陷2x(圖1B);或設為如下高黏度之黏性體:於以填料1A、1B不自樹脂層2露出而填埋於樹脂層2之方式壓入填料1A、1B時,於填料1A、1B之正上方之樹脂層2之表面形成凹陷2y(圖4)。因此,關於樹脂層2於60℃之黏度,下限較佳為3000Pa‧s以上,更佳為4000Pa‧s以上,進而較佳為4500Pa‧s以上,上限較佳為20000Pa‧s以下,更佳為15000Pa‧s以下,進而較佳為10000Pa‧s以下。該測量可利用與最低熔 融黏度相同之測量方法而進行,並提取溫度為60℃之值而求出。 Furthermore, when the filler-dispersed layer 3 of the film 10A containing the filler is formed by press-fitting the fillers 1A and 1B into the resin layer 2, the resin layer 2 when the fillers 1A and 1B are press-fitted is set to one of the following high viscosity Adhesive body: When the fillers 1A, 1B are pressed into the resin layer 2 in such a way that the fillers 1A, 1B are exposed from the resin layer 2, the resin layer 2 is plastically deformed, and a depression 2x is formed in the resin layer 2 around the fillers 1A, 1B. (FIG. 1B); or as a high-viscosity viscous body: when the fillers 1A, 1B are pressed into the resin layer 2 without being exposed from the resin layer 2, the fillers 1A, 1B A recess 2y is formed on the surface of the resin layer 2 directly above (FIG. 4). Therefore, as for the viscosity of the resin layer 2 at 60°C, the lower limit is preferably 3000 Pa·s or more, more preferably 4000 Pa·s or more, and more preferably 4500 Pa·s or more, and the upper limit is preferably 20000 Pa·s or less, more preferably 15000 Pa·s or less, more preferably 10000 Pa·s or less. This measurement can be performed by the same measurement method as the minimum melt viscosity, and can be obtained by extracting a value at a temperature of 60°C.

關於將填料1A、1B壓入至樹脂層2時之該樹脂層2之具體黏度,根據形成之凹陷2x、2y之形狀或深度等,下限較佳為3000Pa‧s以上,更佳為4000Pa‧s以上,進而較佳為4500Pa‧s以上,上限較佳為20000Pa‧s以下,更佳為15000Pa‧s以下,進而較佳為10000Pa‧s以下。又,較佳為於40~80℃、更佳為於50~60℃下獲得此種黏度。 Regarding the specific viscosity of the resin layer 2 when the fillers 1A and 1B are pressed into the resin layer 2, the lower limit is preferably 3000 Pa·s or more, more preferably 4000 Pa·s, depending on the shape and depth of the formed depressions 2x and 2y. Above, more preferably 4500 Pa·s or more, and the upper limit is preferably 20000 Pa·s or less, more preferably 15000 Pa·s or less, and still more preferably 10000 Pa·s or less. Moreover, it is preferable to obtain such a viscosity at 40-80 degreeC, More preferably, it is 50-60 degreeC.

如上所述,藉由於自樹脂層2露出之填料1A、1B之周圍形成凹陷2x(圖1B),針對將含有填料之膜壓接於物品時產生之填料1A、1B之扁平化而自樹脂受到之阻力與無凹陷2x之情形時相比降低。因此,於將含有填料之膜設為各向異性導電膜之情形時,由於在各向異性導電連接時,導電粒子容易被端子夾持,故而導通性能提升,又,捕捉性提升。尤其是於各向異性導電膜中,由於在樹脂層2之兩面存在作為導電粒子之填料1A、1B,故而為了使自樹脂受到之阻力降低,亦較佳為此種凹陷2x位於任一面,更佳為位於兩面。 As described above, by forming the depressions 2x around the fillers 1A, 1B exposed from the resin layer 2 (FIG. 1B), the flattening of the fillers 1A, 1B generated when the film containing the filler is crimped to the article is affected by the resin. The resistance is reduced compared to the case without depression 2x. Therefore, when the film containing the filler is used as an anisotropic conductive film, the conductive particles are easily pinched by the terminals at the time of anisotropic conductive connection, so that the conduction performance is improved, and the catchability is improved. Especially in the anisotropic conductive film, since fillers 1A and 1B as conductive particles are present on both sides of the resin layer 2, in order to reduce the resistance received from the resin, it is also preferable that the depressions 2x are located on either side, and more The best is located on both sides.

又,藉由於未自樹脂層2露出而填埋之填料1A、1B之正上方之樹脂層2之表面形成凹陷2y(圖4),與無凹陷2y之情形相比,於將含有填料之膜壓接於物品時之壓力容易集中於填料1A、1B。因此,於將含有填料之膜設為各向異性導電膜之情形時,由於在各向異性導電連接時,導電粒子容易被端子夾持,故而捕捉性提升,導通性能提升。尤其是於各向異性導電膜中,由於與上述相同之原因,此種凹陷2y較佳為位於任一面,更佳為位於兩面。2x及2y可於各單面單獨存在,亦可混合存在。 In addition, by forming depressions 2y on the surface of the resin layer 2 just above the fillers 1A and 1B that are buried because they are not exposed from the resin layer 2 (FIG. 4), compared with the case where there is no depression 2y, the film containing the fillers The pressure at the time of crimping the article tends to concentrate on the fillers 1A and 1B. Therefore, when the film containing the filler is used as an anisotropic conductive film, the conductive particles are easily pinched by the terminals at the time of anisotropic conductive connection, so that the trapping property is improved, and the conduction performance is improved. Especially in the anisotropic conductive film, for the same reason as described above, the recesses 2y are preferably located on either side, and more preferably on both sides. 2x and 2y may exist independently on each single side, or may be mixed.

<代替凹陷之“傾斜”或者“起伏”> <Instead of "slope" or "undulation" of depressions>

如圖1B、圖4所示之含有填料之膜之「凹陷」2x、2y亦可自「傾斜」或者「起伏」之觀點進行說明。以下,一面參照圖式一面進行說明。 The "recesses" 2x and 2y of the film containing the filler as shown in Figs. 1B and 4 can also be described from the viewpoint of "slope" or "undulation". Hereinafter, description will be made with reference to the drawings.

各向異性導電膜等含有填料之膜10A由填料分散層3所構成(圖 1B)。填料分散層3中,填料1A、1B以露出之狀態規則地分散於樹脂層2之單面。構成如下之填料層:於膜之俯視下,填料1A、1B未相互接觸,於膜厚方向填料1A、1B亦不相互重疊地規則地分散,填料1A、1B於膜厚方向之位置匹配之單層之填料層。 A filler-containing film 10A such as an anisotropic conductive film is constituted by the filler-dispersed layer 3 (Fig. 1B). In the filler-dispersed layer 3 , the fillers 1A and 1B are regularly dispersed on one side of the resin layer 2 in an exposed state. The filler layer is constituted as follows: in the plan view of the film, the fillers 1A and 1B are not in contact with each other, and the fillers 1A and 1B are regularly dispersed without overlapping each other in the film thickness direction, and the positions of the fillers 1A and 1B in the film thickness direction are matched. layer of filler layer.

於各填料1A、1B之周圍之樹脂層2之表面2a、2b,相對於鄰接之填料間之中央部上之樹脂層2之切平面2p形成有傾斜2x。再者,如下文所述,本發明之含有填料之膜中,亦可於埋入至樹脂層2之填料1A、1B之正上方之樹脂層之表面形成起伏2y(圖4)。 The surfaces 2a and 2b of the resin layer 2 around each of the fillers 1A and 1B are formed with an inclination of 2x with respect to the tangent plane 2p of the resin layer 2 on the central portion between the adjacent fillers. Furthermore, as described below, in the film containing the filler of the present invention, undulations 2y may be formed on the surface of the resin layer immediately above the fillers 1A and 1B embedded in the resin layer 2 ( FIG. 4 ).

於本發明中,所謂「傾斜」,意指如下狀態:於填料1A、1B之附近,樹脂層之表面之平坦性受損,相對於上述切平面2p,樹脂層之一部分不完整,樹脂量降低。換言之,傾斜係填料之周圍之樹脂層之表面相對於切平面缺損。另一方面,所謂「起伏」,意指如下狀態:於填料之正上方之樹脂層之表面存在波紋,因存在如波紋般具有高低差之部分,故而樹脂減少。換言之,填料正上方之樹脂層之樹脂量少於填料正上方之樹脂層之表面位於切平面時。該等可將相當於填料之正上方之部位與填料間之平坦之表面部分(圖1B、圖4)進行比對而辨識。再者,亦存在起伏之起點以傾斜之形式存在之情況。 In the present invention, "inclined" means a state in which the flatness of the surface of the resin layer is impaired in the vicinity of the fillers 1A and 1B, a part of the resin layer is incomplete with respect to the above-mentioned tangent plane 2p, and the amount of resin decreases . In other words, the surface of the resin layer around the inclined system filler is defective with respect to the tangential plane. On the other hand, "wavy" means a state in which there is a corrugation on the surface of the resin layer just above the filler, and there is a portion having a height difference like the corrugation, so that the resin decreases. In other words, the resin amount of the resin layer directly above the filler is less than when the surface of the resin layer directly above the filler is in the tangential plane. These can be identified by comparing the portion corresponding to just above the filler with the flat surface portion between the fillers (FIG. 1B, FIG. 4). Furthermore, there are also cases where the starting point of the ups and downs exists in the form of an inclination.

如上所述,藉由於自樹脂層2露出之填料1A、1B之周圍形成傾斜2x(圖1B),於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,針對填料1A、1B被端子間夾持時產生之填料1A、1B之扁平化而自樹脂受到之阻力較無傾斜2x之情形時降低,因而端子上之填料容易被夾持,因此導通性能提升,又,捕捉性提升。該傾斜較佳沿著填料之外形。其原因在於:除更容易表現連接之效果以外,還容易辨識填料,因此容易進行各向異性導電膜等含有填料之膜之製造中之檢查等。又,該傾斜及起伏存在藉由對樹脂層進行熱壓等而其一部分消失之情況,本發明包含該情況。於此情形時,存在填料 以1點露出於樹脂層之表面之情況。再者,於將含有填料之膜作為各向異性導電膜構成之情形時,連接之電子零件多種多樣,就配合該等進行調整而言,較理想為設計之自由度較高以滿足各種必要條件,故而即便使傾斜或者起伏減少或部分地消失,亦可使用。 As described above, by forming the inclination 2x around the fillers 1A and 1B exposed from the resin layer 2 ( FIG. 1B ), when the film containing the filler is formed as an anisotropic conductive film, when anisotropic conductive connection is made , In view of the flattening of the fillers 1A and 1B generated when the fillers 1A and 1B are clamped between the terminals, the resistance from the resin is reduced compared with the case where the inclination is not 2x, so the fillers on the terminals are easily clamped, so the conduction performance is improved. , again, the catchability is improved. The inclination preferably follows the outer shape of the packing. The reason for this is that, in addition to the effect of connecting more easily, the filler can be easily recognized, so that the inspection in the production of films containing fillers, such as anisotropic conductive films, is facilitated. In addition, some of these inclinations and undulations may disappear by hot pressing or the like of the resin layer, and the present invention includes such cases. In this case, the filler may be exposed on the surface of the resin layer at one point. Furthermore, when a film containing a filler is formed as an anisotropic conductive film, there are various electronic parts to be connected, and in terms of adjusting in accordance with these, it is desirable to have a high degree of freedom of design to satisfy various necessary conditions. Therefore, it can be used even if the inclination or undulation is reduced or partially eliminated.

又,藉由於不自樹脂層2露出而填埋之填料1A、1B之正上方之樹脂層2之表面形成起伏2y(圖4),與傾斜之情形同樣地,於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,來自端子之按壓力容易施加於填料。又,藉由具有起伏,與樹脂平坦地堆積之情形相比,填料之正上方之樹脂量降低,故而於連接時,容易排除填料正上方之樹脂,端子與填料容易接觸,因而端子之填料之捕捉性提升,導通可靠性提升。 Further, by forming undulations 2y ( FIG. 4 ) on the surface of the resin layer 2 immediately above the fillers 1A and 1B buried without being exposed from the resin layer 2 , as in the case of inclination, the films containing the fillers were used as the respective When an anisotropic conductive film is constituted, a pressing force from a terminal is easily applied to the filler during anisotropic conductive connection. In addition, due to the undulations, the amount of resin directly above the filler is reduced compared to the case where the resin is flatly stacked, so that the resin directly above the filler can be easily removed during connection, and the terminal and the filler are easily contacted. The capture performance is improved, and the conduction reliability is improved.

就容易獲得上述填料之露出部分之周圍之樹脂層2之傾斜2x(圖1B)、或填料之正上方之樹脂層之起伏2y(圖4)之效果之方面而言,填料1A、1B之露出部分之周圍之傾斜2x之最大深度Le與填料1A、1B之粒徑DA、DB之比(Le/DA)、(Le/DB)較佳為未達50%,更佳為未達30%,進而較佳為20~25%,填料1A、1B之露出部分之周圍之傾斜2x之最大直徑Ld與填料1A、1B之粒徑DA、DB之比(Ld/DA)、(Ld/DB)較佳為100%以上,更佳為100~150%,填料1A、1B之正上方之樹脂之起伏2y之最大深度Lf與填料1A、1B之粒徑DA、DB之比(Lf/DA)、(Lf/DB)大於0,較佳為未達10%,更佳為5%以下。 In terms of easily obtaining the effect of the inclination 2x ( FIG. 1B ) of the resin layer 2 around the exposed portion of the filler, or the undulation 2y ( FIG. 4 ) of the resin layer immediately above the filler, the exposure of the fillers 1A and 1B The ratio (Le/DA), (Le/DB) of the maximum depth Le of the slope 2x around the part to the particle diameters DA and DB of the fillers 1A and 1B is preferably less than 50%, more preferably less than 30%, Further preferably 20~25%, the ratio (Ld/DA), (Ld/DB) of the maximum diameter Ld of the inclination 2x around the exposed part of the fillers 1A, 1B to the particle diameters DA and DB of the fillers 1A, 1B (Ld/DA) Preferably it is more than 100%, more preferably 100~150%, the ratio of the maximum depth Lf of the undulation 2y of the resin directly above the fillers 1A and 1B to the particle sizes DA and DB of the fillers 1A and 1B (Lf/DA), ( Lf/DB) is greater than 0, preferably less than 10%, more preferably 5% or less.

再者,填料1A、1B之露出部分之徑Lc可設為填料1A、1B之粒徑DA、DB以下,較佳為粒徑DA、DB之10~90%。又,可使填料1A、1B之頂部之1點露出,亦可使DA、DB完全填埋於樹脂層2內,使徑Lc成為零。 Furthermore, the diameter Lc of the exposed portion of the fillers 1A and 1B can be set to be equal to or smaller than the particle diameters DA and DB of the fillers 1A and 1B, preferably 10 to 90% of the particle diameters DA and DB. In addition, one point of the top of the fillers 1A and 1B can be exposed, and DA and DB can be completely buried in the resin layer 2 so that the diameter Lc can be made zero.

於此種本發明中,樹脂層2之表面之傾斜2x、起伏2y之存在可藉由利用掃描型電子顯微鏡觀察各向異性導電膜等含有填料之膜之剖面進行確認,於面視野觀察中亦可確認。利用光學顯微鏡、金屬顯微鏡亦可觀察傾斜2x、 起伏2y。又,傾斜2x、起伏2y之大小亦可利用圖像觀察時之焦點調整等進行確認。即便於如上所述傾斜或者起伏因熱壓接合而減少後亦相同。其原因在於存在留下痕跡之情況。 In the present invention, the presence of the inclination 2x and the undulations 2y on the surface of the resin layer 2 can be confirmed by observing a cross section of a film containing a filler such as an anisotropic conductive film with a scanning electron microscope. can be confirmed. The tilt 2x and the undulation 2y can also be observed with an optical microscope and a metal microscope. In addition, the magnitude of the inclination 2x and the waviness 2y can also be confirmed by focusing adjustment during image observation. This is the same even after the inclination or undulation is reduced by thermocompression bonding as described above. The reason for this is that there are cases where traces are left.

(樹脂層之層厚) (layer thickness of resin layer)

本發明之各向異性導電膜等含有填料之膜中,樹脂層2之層厚La與所有填料1A、1B之平均粒徑DA、DB之比(La/DA)、(La/DB)較佳為0.3以上,更佳為0.6~10,進而較佳為0.6~8,尤佳為0.6~6。作為平均粒徑DA、DB,於第1填料層之填料1A與第2填料層之填料1B之各者之平均粒徑不同之情形時,可設為該等之平均。若樹脂層2之層厚La過大,該比超過10,則於將含有填料之膜作為各向異性導電膜構成之情形時,於各向異性導電連接時,作為導電粒子之填料1A、1B容易產生位置偏離,端子之填料1A、1B之捕捉性降低。反之,若樹脂層2之層厚La過小,該比未達0.3,則難以使填料1A、1B於樹脂層2中維持特定之排列。 In films containing fillers such as the anisotropic conductive film of the present invention, the ratios (La/DA) and (La/DB) of the layer thickness La of the resin layer 2 to the average particle diameters DA and DB of all the fillers 1A and 1B are preferable It is 0.3 or more, more preferably 0.6 to 10, still more preferably 0.6 to 8, particularly preferably 0.6 to 6. As the average particle diameters DA and DB, when the average particle diameters of each of the filler 1A of the first filler layer and the filler 1B of the second filler layer are different, the average particle diameter can be set as the average. When the layer thickness La of the resin layer 2 is too large and the ratio exceeds 10, when the film containing the filler is formed as an anisotropic conductive film, the fillers 1A and 1B as conductive particles are likely to be easily connected during anisotropic conductive connection. The positional deviation occurs, and the catchability of the terminal fillers 1A and 1B is lowered. On the other hand, if the layer thickness La of the resin layer 2 is too small and the ratio is less than 0.3, it will be difficult to maintain the specific arrangement of the fillers 1A and 1B in the resin layer 2 .

(樹脂層之組成) (Composition of resin layer)

樹脂層2根據含有填料之膜之用途,可為導電性亦可為絕緣性,又,可為塑性亦可為硬化性,較佳為可由絕緣性之硬化性樹脂組成物形成,例如,可由含有熱聚合性化合物及熱聚合起始劑之絕緣性之熱聚合性組成物形成。可視需要使熱聚合性組成物含有光聚合起始劑。該等可使用公知之樹脂或化合物。以下,以含有填料之膜之一態樣之各向異性導電膜為例,對絕緣性樹脂之情形進行說明。 The resin layer 2 may be conductive or insulating depending on the application of the film containing the filler, and may be plastic or sclerosing. Preferably, the resin layer 2 may be formed of an insulating curable resin composition. An insulating thermally polymerizable composition of a thermally polymerizable compound and a thermally polymerizable initiator is formed. If necessary, the thermally polymerizable composition may contain a photopolymerization initiator. For these, known resins or compounds can be used. Hereinafter, the case of the insulating resin will be described by taking an example of an anisotropic conductive film which is one form of a film containing a filler.

於將熱聚合起始劑與光聚合起始劑併用之情形時,可使用發揮作為熱聚合性化合物及作為光聚合性化合物兩者之功能者,亦可除熱聚合性化合物以外另外含有光聚合性化合物。較佳為除熱聚合性化合物以外另外含有光聚合性化合物。例如,使用陽離子系硬化起始劑作為熱聚合起始劑,使用環氧樹脂作為熱聚合性化合物,使用光自由基聚合起始劑作為光聚合起始劑,使用丙 烯酸酯化合物作為光聚合性化合物。 When a thermal polymerization initiator and a photopolymerization initiator are used in combination, one that functions as both a thermally polymerizable compound and a photopolymerizable compound may be used, or a photopolymerizable compound may be included in addition to the thermally polymerizable compound. sexual compounds. It is preferable to contain a photopolymerizable compound in addition to the thermally polymerizable compound. For example, a cationic curing initiator is used as a thermal polymerization initiator, an epoxy resin is used as a thermal polymerizable compound, a photoradical polymerization initiator is used as a photopolymerization initiator, and an acrylate compound is used as a photopolymerizable compound .

作為光聚合起始劑,可含有對波長不同之光產生反應之多個種類。藉此,於將含有填料之膜作為各向異性導電膜構成之情形時,可區分使用製造各向異性導電膜時構成絕緣性樹脂層之樹脂之光硬化、及於各向異性導電連接時用以將電子零件彼此接著之樹脂之光硬化所使用的波長。 As the photopolymerization initiator, a plurality of species that react to light having different wavelengths may be contained. Thereby, when the film containing the filler is formed as an anisotropic conductive film, it is possible to distinguish between the photocuring of the resin constituting the insulating resin layer in the production of the anisotropic conductive film, and the use in the anisotropic conductive connection. The wavelength used for light curing of the resin that adheres electronic parts to each other.

製造含有填料之膜之一態樣之各向異性導電膜時之光硬化中,可使樹脂層所包含之光聚合性化合物之全部或一部分進行光硬化。藉由該光硬化,樹脂層2中之填料1A、1B之配置得到保持或固定化,可期待短路之抑制及捕捉性之提升。又,亦可藉由該光硬化而對各向異性導電膜之製造步驟中之樹脂層之黏度進行適當調整。 In the photocuring at the time of producing the anisotropic conductive film which is one aspect of the film containing a filler, all or a part of the photopolymerizable compound contained in the resin layer can be photocured. By the photocuring, the arrangement of the fillers 1A and 1B in the resin layer 2 is maintained or fixed, and the suppression of short circuits and the improvement of trapping properties can be expected. Moreover, the viscosity of the resin layer in the manufacturing process of an anisotropic conductive film can also be suitably adjusted by this photohardening.

樹脂層中之光聚合性化合物之摻合量較佳為30質量%以下,更佳為10質量%以下,進而更佳為未達2%質量。其原因在於:若光聚合性化合物過多,則對連接時之壓入所施加之推力增加。尤其是於各向異性導電連接之情形時,較佳為設為如上所述。其是為了兼顧樹脂流動、及保持於樹脂之導電粒子之壓入。 The blending amount of the photopolymerizable compound in the resin layer is preferably 30% by mass or less, more preferably 10% by mass or less, and still more preferably less than 2% by mass. The reason for this is that when there are too many photopolymerizable compounds, the thrust applied to the press-fit at the time of connection increases. Especially in the case of anisotropic conductive connection, it is preferable to set it as the above. This is to achieve both the flow of the resin and the indentation of the conductive particles held in the resin.

作為熱聚合性組成物之例,可列舉包含(甲基)丙烯酸酯化合物及熱自由基聚合起始劑之熱自由基聚合性丙烯酸酯系組成物、包含環氧化合物及熱陽離子聚合起始劑之熱陽離子聚合性環氧系組成物等。亦可使用包含熱陰離子聚合起始劑之熱陰離子聚合性環氧系組成物代替包含熱陽離子聚合起始劑之熱陽離子聚合性環氧系組成物。又,只要不會特別帶來阻礙,則可將多種熱聚合性組成物併用。作為併用例,可列舉熱陽離子聚合性組成物與熱自由基聚合性組成物之併用等。 Examples of the thermally polymerizable composition include a thermally radically polymerizable acrylate-based composition containing a (meth)acrylate compound and a thermal radical polymerization initiator, and a thermally polymerizable acrylate-based composition containing an epoxy compound and a thermally cationic polymerization initiator. The thermal cationically polymerizable epoxy-based composition, etc. A thermal anion polymerizable epoxy-based composition containing a thermal anionic polymerization initiator may also be used instead of the thermal cationic polymerizable epoxy-based composition containing a thermal cationic polymerization initiator. Moreover, as long as it does not cause a particular hindrance, it is possible to use a plurality of thermally polymerizable compositions in combination. As an example of combined use, the combined use of a thermally cationically polymerizable composition and a thermally radically polymerizable composition, etc. can be mentioned.

此處,作為(甲基)丙烯酸酯化合物,可使用以往公知之熱聚合型(甲基)丙烯酸酯單體。例如,可使用單官能(甲基)丙烯酸酯系單體、二官能以上 之多官能(甲基)丙烯酸酯系單體。 Here, as the (meth)acrylate compound, a conventionally known thermally polymerizable (meth)acrylate monomer can be used. For example, a monofunctional (meth)acrylate-based monomer, and a polyfunctional (meth)acrylate-based monomer having a difunctional or higher level can be used.

作為熱自由基聚合起始劑,例如可列舉有機過氧化物、偶氮系化合物等。尤其是可較佳地使用不會產生導致氣泡之氮氣之有機過氧化物。 As a thermal radical polymerization initiator, an organic peroxide, an azo type compound, etc. are mentioned, for example. In particular, organic peroxides that do not generate nitrogen gas that cause bubbles can be preferably used.

關於熱自由基聚合起始劑之使用量,若過少則會變得硬化不良,若過多則製品壽命會降低,因而相對於(甲基)丙烯酸酯化合物100質量份,較佳為2~60質量份,更佳為5~40質量份。 The usage-amount of the thermal radical polymerization initiator is preferably 2 to 60 parts by mass relative to 100 parts by mass of the (meth)acrylate compound, since the curing failure will occur if it is too small, and the life of the product will be shortened if it is too large. parts, more preferably 5 to 40 parts by mass.

作為環氧化合物,可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆型環氧樹脂、該等之改質環氧樹脂、脂環式環氧樹脂等,可將該等之2種以上併用。又,除環氧化合物以外,還可併用氧環丁烷化合物。 Examples of the epoxy compound include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, modified epoxy resins of these, alicyclic epoxy resins, and the like. Use two or more of them in combination. Moreover, in addition to an epoxy compound, an oxetane compound may be used together.

作為熱陽離子聚合起始劑,可採用作為環氧化合物之熱陽離子聚合起始劑所公知者,例如可使用藉由熱而產生酸之錪鹽、鋶鹽、鏻鹽、二茂鐵類等,尤其是可較佳地使用對溫度呈現出良好之潛伏性之芳香族鋶鹽。 As the thermal cationic polymerization initiator, those known as thermal cationic polymerization initiators for epoxy compounds can be used, for example, iodonium salts, periconium salts, phosphonium salts, ferrocenes, etc., which generate an acid by heat, can be used, In particular, aromatic perylene salts exhibiting good latency to temperature can be preferably used.

關於熱陽離子聚合起始劑之使用量,若過少則亦有硬化不良之傾向,若過多則亦有製品壽命會降低之傾向,因而相對於環氧化合物100質量份,較佳為2~60質量份,更佳為5~40質量份。 Regarding the usage amount of the thermal cationic polymerization initiator, if it is too small, the curing tends to be poor, and if it is too large, the product life tends to be shortened. Therefore, it is preferably 2 to 60 parts by mass relative to 100 parts by mass of the epoxy compound. parts, more preferably 5 to 40 parts by mass.

熱聚合性組成物較佳為含有膜形成樹脂或矽烷偶合劑。作為膜形成樹脂,可列舉苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等,可將該等之2種以上併用。該等之中,就成膜性、加工性、連接可靠性之觀點而言,可較佳地使用苯氧基樹脂。重量平均分子量較佳為10000以上。又,作為矽烷偶合劑,可列舉環氧系矽烷偶合劑、丙烯酸系矽烷偶合劑等。該等矽烷偶合劑主要為烷氧基矽烷衍生物。 The thermally polymerizable composition preferably contains a film-forming resin or a silane coupling agent. Examples of the film-forming resin include phenoxy resins, epoxy resins, unsaturated polyester resins, saturated polyester resins, urethane resins, butadiene resins, polyimide resins, polyamide resins, and polyolefin resins etc., and two or more of these can be used in combination. Among these, a phenoxy resin can be preferably used from the viewpoint of film formability, workability, and connection reliability. The weight average molecular weight is preferably 10,000 or more. Moreover, as a silane coupling agent, an epoxy-type silane coupling agent, an acryl-type silane coupling agent, etc. are mentioned. These silane coupling agents are mainly alkoxysilane derivatives.

為了調整熔融黏度,可使熱聚合性組成物除上述填料1A、1B以外另外含有絕緣性填料。其可列舉二氧化矽粉或氧化鋁粉等。較佳為絕緣性填 料粒徑20~1000nm之微小之填料,又,摻合量較佳為相對於環氧化合物等熱聚合性化合物(光聚合性化合物)100質量份設為5~50質量份。除填料1A、1B以外另外含有之絕緣性填料於含有填料之膜之用途為各向異性導電膜之情形時可較佳地使用,根據用途,亦可不為絕緣性,例如可含有導電性之微小之填料。於將含有填料之膜作為各向異性導電膜構成之情形時,可視需要使形成填料分散層之樹脂層適當含有與填料1A、1B不同之更微小之絕緣性填料(所謂奈米填料)。 In order to adjust the melt viscosity, the thermally polymerizable composition may contain an insulating filler in addition to the above-mentioned fillers 1A and 1B. It can be exemplified by silica powder, alumina powder, and the like. The insulating filler is preferably a small filler with a particle size of 20 to 1000 nm, and the blending amount is preferably 5 to 50 parts by mass relative to 100 parts by mass of a thermopolymerizable compound (photopolymerizable compound) such as an epoxy compound. . The insulating filler contained in addition to the fillers 1A and 1B can be preferably used when the application of the film containing the filler is an anisotropic conductive film, but it may not be insulating depending on the application, for example, it may contain conductive microscopic of filler. When the film containing the filler is constituted as an anisotropic conductive film, the resin layer forming the filler-dispersed layer may appropriately contain a finer insulating filler (so-called nanofiller) different from the fillers 1A and 1B as necessary.

可使本發明之含有填料之膜除上述絕緣性或導電性之填料以外另外含有填充劑、軟化劑、促進劑、抗老化劑、著色劑(顏料、染料)、有機溶劑、離子捕捉劑等。 The filler-containing film of the present invention may further contain fillers, softeners, accelerators, antiaging agents, colorants (pigments, dyes), organic solvents, ion scavengers, etc. in addition to the above-mentioned insulating or conductive fillers.

<含有填料之膜之變化態樣> <Variation of film containing filler>

(填料單元) (packing unit)

本發明之含有填料之膜關於填料之排列,可採取各種態樣。 The filler-containing film of the present invention can take various forms with respect to the arrangement of the fillers.

例如可列舉如圖7A、圖7B所示之各向異性導電膜等含有填料之膜10C般,由第1填料層之多個填料1A形成填料單元1C1,由第2填料層之多個填料1B形成填料單元1C2,填料單元1C1、1C2彼此不接觸,於含有填料之膜之俯視下亦不重疊,填料單元1C1、1C2排列成格子狀。於此情形時,第1填料層之每1個填料單元1C1之填料1A之個數例如可設為2~9個,尤其可設為2~4個。於填料單元內,填料1A可排列成一列,亦可集合成塊狀。第2填料層之每1個填料單元1C2之填料1B之個數亦同樣地,例如可設為2~9個,尤其可設為2~4個。於填料單元內,填料1B可排列成一列,亦可集合成塊狀。其於各向異性導電膜之情形時,亦可藉由根據端子佈局以短路風險變低之方式配置填料單元而應用。於除各向異性導電膜以外之用途中,根據目的適當調整即可。 For example, a filler unit 1C 1 is formed from a plurality of fillers 1A in the first filler layer, and a filler unit 1C 1 is formed from a plurality of fillers in the second filler layer, such as a film 10C containing a filler such as an anisotropic conductive film as shown in FIGS. 7A and 7B . 1B forms a filler unit 1C 2 , the filler units 1C 1 and 1C 2 do not contact each other, and do not overlap when viewed from a plan view of the film containing the filler, and the filler units 1C 1 and 1C 2 are arranged in a lattice shape. When in this case, the number of packing elements per a first layer of packing of the filler 1C 1A of example 1 is set to 2 to 9, especially 2 to 4 can be set. In the packing unit, the packings 1A can be arranged in a row or assembled into a block. The number of packing elements per a second filler layer of a filler 2 of 1B 1C also the same manner as, for example, be 2 to 9, especially 2 to 4 can be set. In the packing unit, the packings 1B can be arranged in a row or assembled into a block. In the case of the anisotropic conductive film, it can also be applied by arranging the filler unit in such a way that the risk of short circuit is reduced according to the terminal layout. In applications other than the anisotropic conductive film, it may be appropriately adjusted according to the purpose.

於各向異性導電膜之情形時,就提升填料(導電粒子)之捕捉性 並且抑制短路之方面而言,較佳為由分別排列成一列之填料構成第1填料層之填料單元1C1及第2填料層之填料單元1C2,且較佳為將該等之長邊方向設為非平行,尤佳為如圖7A、圖7B所示般正交。 In the case of an anisotropic conductive film, in terms of enhancing the trapping properties of the filler (conductive particles) and suppressing short circuits, it is preferable that the filler unit 1C 1 and the first filler layer of the first filler layer are composed of fillers arranged in a row. packing element 1C of the second filler layer 2, and preferably the length of the other side direction is non-parallel, particularly preferably as shown in FIG. 7A, FIG. 7B as orthogonal.

又,亦可如圖8A、圖8B所示之各向異性導電膜等含有填料之膜10D般,使相互接觸或接近之第1填料層之多個填料1A與相互接觸或接近之第2填料層之多個填料1B接觸或接近而形成填料單元1C。該填料單元1C彼此亦較佳為不相互接觸地使填料單元1C規則排列。又,較佳為將每1個填料單元1C之第1填料層之填料1A之個數設為2~9個,尤其是設為2~4個,將第2填料層之填料1B設為2~9個,尤其是設為2~4個。其亦與上述同樣地,於各向異性導電膜之情形時,亦可藉由根據端子佈局以短路風險變低之方式配置填料單元而應用。於除各向異性導電膜以外之用途中,根據目的適當調整即可。 Furthermore, as in the film 10D containing the filler such as the anisotropic conductive film shown in FIGS. 8A and 8B , the plurality of fillers 1A of the first filler layer in contact with or close to each other and the second fillers in contact with or close to each other may be formed. A plurality of fillers 1B of the layers are in contact or close to each other to form a filler unit 1C. It is also preferable that the packing units 1C are regularly arranged so that they do not come into contact with each other. Moreover, it is preferable to set the number of fillers 1A of the first packing layer per one packing unit 1C to 2 to 9, especially 2 to 4, and to set the filler 1B of the second packing layer to 2 ~9, especially set to 2~4. Similarly to the above, in the case of an anisotropic conductive film, it can also be applied by arranging the filler unit so that the risk of short circuit is reduced according to the terminal layout. In applications other than the anisotropic conductive film, it may be appropriately adjusted according to the purpose.

於各向異性導電膜之情形時,若以此方式將具有多個由填料(導電粒子)1A、1B所形成之填料單元1C的含有填料之膜10D用於各向異性導電連接,並向膜厚方向進行按壓,則如圖9所示,可使相互接觸之填料(導電粒子)1A、1B放射狀地擴散,從而將填料(導電粒子)1A、1B彼此分離。於此情形時,如圖10所示,於填料(導電粒子)1A、1B不受對向之端子20、21按壓之端子間區域中,於各向異性導電連接前,形成填料單元1C之填料1A、1B亦會分離。因此,根據該含有填料之膜10D,可抑制鄰接之端子間之短路。另一方面,於在各向異性導電連接前填料(導電粒子)1A、1B位於對向之端子20、21之邊緣部分之情形時,藉由各向異性導電連接,填料1A及1B之至少一者亦會被端子20、21捕捉。因此,根據該含有填料之膜10D,導電粒子之捕捉效率提升。於除各向異性導電膜以外之用途中,亦可根據目的形成此種填料單元1C。認為較佳為應用於利用壓接輥按壓之情形。其原因在於:對除膜之厚度方向以外之方向亦容易施加加壓之荷重。 In the case of an anisotropic conductive film, if the filler-containing film 10D having a plurality of filler units 1C formed of fillers (conductive particles) 1A, 1B is used for anisotropic conductive connection, and the film By pressing in the thickness direction, as shown in FIG. 9 , the fillers (conductive particles) 1A and 1B in contact with each other can be radially diffused, thereby separating the fillers (conductive particles) 1A and 1B from each other. In this case, as shown in FIG. 10, in the region between the terminals where the fillers (conductive particles) 1A, 1B are not pressed by the opposing terminals 20, 21, before the anisotropic conductive connection, the filler of the filler unit 1C is formed 1A and 1B will also be separated. Therefore, according to this filler-containing film 10D, short circuit between adjacent terminals can be suppressed. On the other hand, in the case where the fillers (conductive particles) 1A, 1B are located at the edge portions of the opposing terminals 20, 21 before the anisotropic conductive connection, at least one of the fillers 1A and 1B is formed by the anisotropic conductive connection will also be caught by terminals 20 and 21. Therefore, according to the film 10D containing the filler, the capturing efficiency of the conductive particles is improved. In applications other than the anisotropic conductive film, such filler unit 1C may be formed according to the purpose. It is considered that it is preferably applied to the case of pressing with a pressing roller. The reason for this is that it is easy to apply a pressing load in directions other than the thickness direction of the film.

(對一填料層之配置之缺漏利用另一填料層進行填補之態樣) (A state in which the gaps in the configuration of one packing layer are filled with another packing layer)

可藉由如下方式消除缺漏:以設計上特定之排列及特定之個數密度形成第1填料層及第2填料層之一填料層,然後,針對整個區域確認填料之排列及個數密度,以配合該一導電粒子層之粒子配置之方式,進而以視需要填補一填料層之粒子配置中之缺漏之方式形成另一填料層,而將各向異性導電膜等含有填料之膜整體之填料設為特定之配置。因此,後形成之填料層亦可於含有填料之膜之長邊方向使個數密度變化。藉由如此,含有填料之膜之良率提升,可期待成本削減之效果。 The omission can be eliminated by the following method: forming one of the first packing layer and the second packing layer with a specific arrangement and a specific number density in the design, and then confirming the arrangement and number density of the packing for the entire area to In accordance with the particle arrangement of the conductive particle layer, another filler layer is formed by filling the gaps in the particle arrangement of the filler layer as needed, and the filler of the whole film containing the filler, such as an anisotropic conductive film, is provided. for a specific configuration. Therefore, the number density of the filler layer formed later can also be changed in the longitudinal direction of the film containing the filler. By doing so, the yield of the film containing the filler can be improved, and the effect of cost reduction can be expected.

(第2樹脂層之積層) (Lamination of the second resin layer)

可如圖11A所示之各向異性導電膜等含有填料之膜10E般,於填料分散層3之一表面積層最低熔融黏度較佳為低於形成填料分散層3之樹脂層2的第2樹脂層4。又,第1填料層與第2填料層於樹脂層2中之埋入率不同,於第1填料層較第2填料層自樹脂層露出之情形時,可如圖11B所示之各向異性導電膜等含有填料之膜10F般於自樹脂層2之突出量較大之第1填料層側積層第2樹脂層4,亦可如圖11C所示之各向異性導電膜等含有填料之膜10G般,於填料層未突出之樹脂層2之表面積層第2樹脂層4。藉由第2樹脂層4之積層,於使用各向異性導電膜等含有填料之膜將電子零件進行各向異性導電連接時,可填充由電子零件之電極或凸塊所形成之空間而提升接著性。再者,於積層第2樹脂層4之情形時,較佳為使第2樹脂層4貼附於將會利用工具加壓之電子零件(使樹脂層2貼附於載台上載置之電子零件)。藉此,可避免填料意外移動,可提升捕捉性。 Like the film 10E containing the filler such as the anisotropic conductive film shown in FIG. 11A , the minimum melt viscosity of the surface layer of the filler-dispersed layer 3 is preferably lower than that of the second resin forming the resin layer 2 of the filler-dispersed layer 3 . Layer 4. In addition, the embedding ratio of the first filler layer and the second filler layer in the resin layer 2 is different. When the first filler layer is exposed from the resin layer more than the second filler layer, the anisotropy as shown in FIG. 11B can be obtained. A film 10F containing a filler such as a conductive film is generally laminated with a second resin layer 4 on the side of the first filler layer protruding from the resin layer 2 more, and a film containing a filler such as an anisotropic conductive film as shown in FIG. 11C may also be used. Like 10G, the second resin layer 4 is layered on the surface area of the resin layer 2 not protruding from the filler layer. By the lamination of the second resin layer 4, when an anisotropic conductive connection of electronic parts is performed using a film containing a filler such as an anisotropic conductive film, the space formed by the electrodes or bumps of the electronic parts can be filled and the bonding can be improved. sex. Furthermore, in the case of laminating the second resin layer 4, it is preferable that the second resin layer 4 is attached to the electronic component to be pressed with a tool (the resin layer 2 is attached to the electronic component placed on the stage). ). Thereby, the unintentional movement of the filler can be avoided, and the catchability can be improved.

關於樹脂層2與第2樹脂層4之最低熔融黏度,於存在差之情況時,由電子零件之電極或凸塊所形成之空間容易被第2樹脂層4填充,能夠期待提升電子零件彼此之接著性之效果。又,該差越大,於填料分散層3中存在之樹脂層2之移動量相對越小,因而端子之填料之捕捉性容易提升。實用上,樹脂層 2與第2樹脂層4之最低熔融黏度比較佳為2以上,更佳為5以上,進而較佳為8以上。另一方面,若該比過大,則於將長條之各向異性導電膜等含有填料之膜製成卷裝體之情形時,有樹脂溢出或黏連之虞,因而實用上較佳為15以下。關於第2樹脂層4之較佳之最低熔融黏度,更具體而言,滿足上述比且為3000Pa‧s以下,更佳為2000Pa‧s以下,尤其是100~2000Pa‧s。 If there is a difference in the minimum melt viscosity between the resin layer 2 and the second resin layer 4, the space formed by the electrodes or bumps of the electronic components is easily filled with the second resin layer 4, and it is expected to improve the mutual relationship between the electronic components. The effect of continuity. In addition, as the difference is larger, the amount of movement of the resin layer 2 existing in the filler-dispersed layer 3 is relatively smaller, so that the catchability of the filler of the terminal is easily improved. Practically, the minimum melt viscosity of the resin layer 2 and the second resin layer 4 is preferably 2 or more, more preferably 5 or more, and still more preferably 8 or more. On the other hand, if the ratio is too large, when a film containing a filler such as a long anisotropic conductive film is formed into a roll body, there is a risk of resin overflow or sticking, so 15 is practically preferable. the following. More specifically, the preferred minimum melt viscosity of the second resin layer 4 satisfies the above ratio and is 3000 Pa·s or less, more preferably 2000 Pa·s or less, especially 100 to 2000 Pa·s.

再者,第2樹脂層4可藉由於與樹脂層相同之樹脂組成物中對黏度進行調整而形成。 Furthermore, the second resin layer 4 can be formed by adjusting the viscosity of the same resin composition as the resin layer.

第2樹脂層4之層厚較佳為4~20μm。或者相對於填料直徑為1~8倍。 The thickness of the second resin layer 4 is preferably 4 to 20 μm. Or 1 to 8 times the diameter of the filler.

又,將樹脂層2與第2樹脂層4合併而成之各向異性導電膜等含有填料之膜10E、10F、10G整體之最低熔融黏度,實用上為8000Pa‧s以下,較佳為200~7000Pa‧s以下,尤佳為200~4000Pa‧s。 In addition, the minimum melt viscosity of the entire films 10E, 10F, and 10G containing fillers such as anisotropic conductive films obtained by combining the resin layer 2 and the second resin layer 4 is practically 8000 Pa·s or less, preferably 200~ Below 7000Pa‧s, preferably 200~4000Pa‧s.

(第3樹脂層之積層) (Lamination of the third resin layer)

可隔著樹脂層2於與第2樹脂層4為相反之側設置第3樹脂層。可使第3樹脂層發揮作為黏性層之功能。 The third resin layer may be provided on the opposite side to the second resin layer 4 via the resin layer 2 . The third resin layer can function as an adhesive layer.

第3樹脂層之樹脂組成、黏度及厚度可與第2樹脂層相同,亦可不同。將樹脂層2、第2樹脂層4及第3樹脂層合併而成之各向異性導電膜之最低熔融黏度並無特別限制,實用上為8000Pa‧s以下,較佳為200~7000Pa‧s以下,尤佳為200~4000Pa‧s。 The resin composition, viscosity and thickness of the third resin layer may be the same as or different from those of the second resin layer. The minimum melt viscosity of the anisotropic conductive film formed by combining the resin layer 2, the second resin layer 4 and the third resin layer is not particularly limited, but is practically 8000Pa·s or less, preferably 200~7000Pa·s or less , preferably 200~4000Pa·s.

(其他積層態樣) (Other laminated versions)

根據含有填料之膜之用途,可積層多個填料分散層3,亦可於所積層之填料分散層間介置如第2樹脂層般不含填料之層,還可於最外層設置第2樹脂層或第3樹脂層。 Depending on the application of the film containing the filler, a plurality of filler-dispersed layers 3 may be stacked, a layer without filler like the second resin layer may be interposed between the stacked filler-dispersed layers, or a second resin layer may be provided on the outermost layer or the third resin layer.

<含有填料之膜之製造方法> <Production method of film containing filler>

具有填料分散層3之單層作為樹脂層的本發明之含有填料之膜例如可藉由如下方式而獲得:使填料1A以特定之分散保持(較佳為以特定之排列保持)於樹脂層2之一表面,將該填料1A利用平板或輥等壓入至樹脂層2,亦同樣地使填料1B以特定之分散保持(較佳為以特定之排列保持)並壓入於樹脂層2之另一表面。又,於將填料以特定之分散狀態保持於樹脂層之兩面時,可利用各種方法附著,如使用塗佈輥附著、或使用轉印模具附著,較佳為使在樹脂層之一表面保持填料之方向與在另一表面保持填料之方向反轉(180度)。藉此,於正背一體地觀察時,可緩和膜之正面之填料之分散狀態之不均一性、及背面之填料之分散狀態之不均一性。 The filler-containing film of the present invention having a single layer of the filler-dispersed layer 3 as the resin layer can be obtained, for example, by holding the filler 1A in a specific dispersion (preferably in a specific arrangement) on the resin layer 2 On one surface, the filler 1A is pressed into the resin layer 2 by a flat plate or a roller, and the filler 1B is similarly held in a specific dispersion (preferably in a specific arrangement) and pressed into the other side of the resin layer 2. a surface. In addition, when the filler is held on both sides of the resin layer in a specific dispersed state, it can be attached by various methods, such as using a coating roller or using a transfer mold, and it is preferable to keep the filler on one surface of the resin layer. The direction is reversed (180 degrees) from the direction in which the filler is held on the other surface. Thereby, when the front and back are observed integrally, the non-uniformity of the dispersion state of the filler on the front surface of the film and the non-uniformity of the dispersion state of the filler on the back surface of the film can be alleviated.

又,於填料分散層3積層有第2樹脂層4之各向異性導電膜等含有填料之膜例如可如圖12所示般獲得。即,使填料1A附著至樹脂層2之一表面(同圖a)並壓入(同圖b),繼而,於壓入了該填料1A之面積層第2樹脂層4(同圖c)。於與第2樹脂層4相反之側之樹脂層2之表面附著填料1B(同圖d),並將該填料1B壓入至樹脂層2(同圖e)。以此方式,可獲得於填料分散層3積層有第2樹脂層4之各向異性導電膜等含有填料之膜10。於此情形時,藉由對自樹脂層2之一表面壓入之填料1A之配置、及自另一面壓入之填料1B之配置進行適當設定,而形成於俯視下該等填料1A、1B接觸或接近之填料單元1C。 Moreover, a filler-containing film such as an anisotropic conductive film in which the second resin layer 4 is laminated on the filler-dispersed layer 3 can be obtained, for example, as shown in FIG. 12 . That is, the filler 1A is attached to one surface of the resin layer 2 (the same figure a) and pressed (the same figure b), and then the second resin layer 4 is layered on the area where the filler 1A is pressed (the same figure c). The filler 1B is attached to the surface of the resin layer 2 on the opposite side to the second resin layer 4 (d in the same figure), and the filler 1B is pressed into the resin layer 2 (the same in the figure e). In this way, the filler-containing film 10 such as an anisotropic conductive film in which the second resin layer 4 is laminated on the filler-dispersed layer 3 can be obtained. In this case, by appropriately setting the arrangement of the filler 1A pressed from one surface of the resin layer 2 and the arrangement of the filler 1B pressed from the other side, the fillers 1A and 1B are formed in contact with each other in a plan view. or close to the packing unit 1C.

關於樹脂層由填料分散層3之單層形成之各向異性導電膜等含有填料之膜,關於在填料分散層3積層有第2樹脂層4之各向異性導電膜等含有填料之膜,進而關於積層有第3樹脂層之態樣,作為使填料1A、1B附著於樹脂層2之方法或形成分散有填料1A、1B之樹脂層2之方法,均可列舉:使用轉印模具將填料轉印至樹脂層之方法、將填料散佈於樹脂層之方法、與專利文獻1記載之方法同樣地使用凹版塗佈機等表面具有規則之槽之塗佈輥將包含填料之樹脂液塗佈於樹脂層或剝離膜的方法等。再者,使用塗佈輥將包含填料之樹脂液塗佈於剝 離膜之方法中,可將藉此形成之樹脂層作為樹脂層2。推測專利文獻1記載之方法如上所述,與使用轉印模具之方法相比,無法使填料精確地規則排列,但若於本發明中使形成第1填料層之填料1A與形成第2填料層之填料1B於各向異性導電膜之長邊方向之附著方向反轉,則即便於形成導電粒子層時形成填料之缺漏或個數密度不均一之部位之情形時,於第1填料層及第2填料層之兩者,填料之缺漏或個數密度不均一之部分亦大致不會重疊,因而可使各填料層中之填料之缺漏或個數密度之不均一性對導通特性帶來之影響降低。 Regarding films containing fillers such as an anisotropic conductive film in which the resin layer is formed from a single layer of the filler-dispersed layer 3 , and films containing fillers such as an anisotropic conductive film in which the second resin layer 4 is laminated on the filler-dispersed layer 3 , and further In the case where the third resin layer is laminated, as a method for adhering the fillers 1A and 1B to the resin layer 2 or a method for forming the resin layer 2 in which the fillers 1A and 1B are dispersed, there may be mentioned: transferring the filler using a transfer mold. The method of printing on the resin layer, the method of dispersing the filler on the resin layer, and the method described in Patent Document 1, the resin liquid containing the filler is applied to the resin using a coating roller having a regular groove on the surface such as a gravure coater method of layering or peeling off the film, etc. Furthermore, in the method of applying the resin liquid containing the filler to the release film using a coating roll, the resin layer thus formed can be used as the resin layer 2 . In the method described in Patent Document 1, as described above, compared with the method using a transfer mold, the fillers cannot be precisely and regularly arranged. The adhesion direction of the filler 1B in the longitudinal direction of the anisotropic conductive film is reversed, so even when the conductive particle layer is formed, there is a defect in the filler or a part with an uneven number density. 2. For the two packing layers, the missing parts of the fillers or the non-uniform part of the number density will not overlap. Therefore, the gaps of the fillers or the non-uniformity of the number density in each packing layer can affect the conduction characteristics. reduce.

上述方法之中,就提升填料之排列之精度之方面而言,較佳為使用轉印模具。作為轉印模具,例如可使用藉由光微影法等公知之開口形成方法對矽、各種陶瓷、玻璃、不鏽鋼等金屬等無機材料、或各種樹脂等有機材料等形成有開口者。又,轉印模具可採用板狀、輥狀等形狀。 Among the above-mentioned methods, it is preferable to use a transfer mold in terms of improving the accuracy of the arrangement of the fillers. As the transfer mold, for example, a well-known opening forming method such as photolithography can be used to form openings in inorganic materials such as silicon, various ceramics, glass, and metals such as stainless steel, or organic materials such as various resins. In addition, the transfer mold may take a shape such as a plate shape and a roll shape.

一般,使用轉印模具使導電粒子等填料附著於樹脂層之步驟中,為了製造長條之各向異性導電膜等含有填料之膜,而使導電粒子自樹脂層之一端依序向另一端之方向附著,但隨著填料之附著步驟之繼續,存在如下傾向:由於模具之堵塞,填料不附著於樹脂層,於各向異性導電膜等含有填料之膜中,成為填料之缺漏之部位增加。因此,於使成為第1填料層之填料自樹脂層之一端向另一端附著之情形時,成為第2填料層之填料較佳為自樹脂層之另一端向一端附著。藉由以此方式使附著方向反轉,第1填料層中導電粒子之缺漏之存在概率較高之區域在第2填料層中成為填料之缺漏之存在概率較低之區域,可使各向異性導電膜等含有填料之膜整體之填料之個數密度均一化,可消除在各向異性導電連接中對填料之性能產生影響之過度之缺漏(於各向異性導電膜之情形時,為連接不良)。又,長條之各向異性導電膜等含有填料之膜一般係以卷裝體之形式製造,因而於使第1填料層與第2填料層之附著方向反轉而製造之情形時,較佳為首先,一面使成為第1填料層之填料自長條之樹脂層之一端向另一端附著, 一面將樹脂層製成卷裝體,繼而,一面將該卷裝體回卷,一面使成為第2填料層之填料以與第1填料層之附著方向反轉之方向附著於樹脂層,並將該樹脂層製成卷裝體。藉此,相較於將形成有第1填料層之樹脂層之卷裝體回卷並再次以與第1填料層相同之附著方向使成為第2填料層之填料附著於樹脂層,可使步驟簡化,因而可期待成本削減之效果。再者,於使附著方向反轉時,可視需要將堵塞之轉印模具更換成新的,亦可進行清理。於可一定程度地容許填料之缺漏之製品之情形時,可減少轉印模具之更換或清理之頻率,因而就該方面而言亦可期待成本削減之效果。 Generally, in the step of attaching fillers such as conductive particles to the resin layer using a transfer mold, in order to manufacture a film containing fillers such as a long anisotropic conductive film, conductive particles are sequentially applied from one end of the resin layer to the other end. However, as the process of attaching the filler continues, there is a tendency that the filler does not adhere to the resin layer due to clogging of the mold, and in films containing fillers such as anisotropic conductive films, the number of places where fillers are missing increases. Therefore, when the filler to be the first filler layer is attached from one end to the other end of the resin layer, the filler to be the second filler layer is preferably attached to one end from the other end of the resin layer. By reversing the direction of attachment in this way, the region of the first filler layer with a higher probability of existence of the conductive particles becomes a region of the second filler layer with a lower probability of the existence of the defect of the filler, and anisotropy can be made. The number density of fillers in the whole film containing fillers such as conductive films can be uniformed, which can eliminate excessive defects that affect the performance of fillers in anisotropic conductive connections (in the case of anisotropic conductive films, it is a poor connection. ). In addition, films containing fillers such as a long anisotropic conductive film are generally produced in the form of a package, and therefore, in the case where the adhesion directions of the first filler layer and the second filler layer are reversed and produced, it is preferable First, the resin layer is formed into a package while the filler that becomes the first filler layer is adhered from one end to the other end of the long resin layer, and then the package is rewound to become the first. 2. The filler of the filler layer is adhered to the resin layer in a direction opposite to the adhesion direction of the first filler layer, and the resin layer is formed into a package. Thereby, compared to rewinding the package on which the resin layer of the first filler layer was formed, and again attaching the filler to be the second filler layer to the resin layer in the same adhesion direction as that of the first filler layer, the step of Since it is simplified, the effect of cost reduction can be expected. Furthermore, when the adhesion direction is reversed, the blocked transfer mold can be replaced with a new one as needed, and can also be cleaned. In the case of a product in which the lack of filler can be tolerated to a certain extent, the frequency of replacement or cleaning of the transfer mold can be reduced, and thus the effect of cost reduction can also be expected in this respect.

於使用塗佈輥將包含導電粒子之樹脂液塗佈於樹脂層或剝離膜之方法中,隨著塗佈之繼續,塗佈輥表面之槽亦會堵塞,因而填料較佳為自該膜之另一端向一端塗佈。 In the method of applying the resin solution containing conductive particles to the resin layer or the release film using the coating roller, as the coating continues, the grooves on the surface of the coating roller will also be blocked, so the filler is preferably from the film. Coat the other end to the end.

又,於將填料散佈於樹脂層之方法中,亦存在填料之缺漏會週期性地重複之情況。於此種情形時,就使填料之缺漏之產生部位於樹脂層之正背不重疊之方面而言,亦較佳為於使成為第1填料層之填料附著於樹脂層時、及於使成為第2填料層之填料附著於樹脂層時,使樹脂層之移行方向反轉。 Also, in the method of dispersing the filler in the resin layer, there is a case where the omission of the filler is periodically repeated. In this case, it is also preferable to make the filler to be the first filler layer adhere to the resin layer, and to make the When the filler of the second filler layer adheres to the resin layer, the moving direction of the resin layer is reversed.

可預測:於利用上述任一製法進行製造之情形時,於製造長條之各向異性導電膜等含有填料之膜之情形時,均會不可避免地形成成為填料之缺漏之部位,但藉由使第1填料層與第2填料層之各向異性導電膜等含有填料之膜之長邊方向上之填料之附著方向反轉,可使成為缺漏之部位於各向異性導電膜等含有填料之膜上不集中於一個部位,而使成為缺漏之部位分散。因此,可有助於各向異性導電膜等含有填料之膜之良率之提升或製造成本之削減。 It can be predicted that in the case of manufacturing by any of the above-mentioned production methods, in the case of manufacturing a film containing a filler such as a long anisotropic conductive film, a part that becomes a filler defect will inevitably be formed, but by The direction of adhesion of the filler in the longitudinal direction of the film containing the filler, such as the anisotropic conductive film of the first filler layer and the second filler layer, is reversed, so that the part that becomes the missing part can be located in the anisotropic conductive film and the like containing the filler. The membrane does not concentrate on one site, and the sites that become the leaks are scattered. Therefore, it can contribute to the improvement of the yield of the film containing a filler, such as an anisotropic conductive film, or the reduction of a manufacturing cost.

再者,於第1填料層中之填料之排列圖案或個數密度與第2填料層中之填料之排列圖案或個數密度相同之情形時或不同之情形時,使各向異性導電膜等含有填料之膜中之第1填料層之附著方向與第2填料層之附著方向反轉對 於使各向異性導電膜等含有填料之膜中之填料之個數密度之不均降低之方面均有效。例如,於各向異性導電膜等含有填料之膜之設計上使填料之排列於第1填料層與第2填料層相同並分別將個數密度例如設為400個/mm2之情形時,根據上述製法,實際所製造之各向異性導電膜等含有填料之膜之長邊方向之一端與另一端之個數密度之差之絕對值較佳為成為160個/mm2以下,更佳為成為80個/mm2以下,同樣地,於將第1填料層與第2填料層之導電粒子之個數密度分別設為65000個/mm2之情形時,各向異性導電膜之長邊方向之一端與另一端之個數密度之差之絕對值較佳為成為26000個/mm2以下,更佳為成為13000個/mm2以下。即,各向異性導電膜等含有填料之膜之長邊方向之一端與另一端之個數密度之差之絕對值成為第1填料層與第2填料層總共之導電粒子之個數密度之平均即800~130000個/mm2之較佳為±20%之範圍內,更佳為±10%之範圍內。再者,本發明並未將個數密度少於400個/mm2之情形排除在外。又,本發明係以各向異性導電膜為例進行說明,但並不限定於此。例如於光學膜中亦可容易地推測出藉由使個數密度均一,可使其性能穩定化。對於消光膜等與外觀直接相關者亦可謂相同。 Furthermore, when the arrangement pattern or number density of the fillers in the first filler layer is the same as or different from the arrangement pattern or number density of the fillers in the second filler layer, an anisotropic conductive film, etc. The reversal of the adhesion direction of the first filler layer and the adhesion direction of the second filler layer in the filler-containing film is effective for reducing the unevenness of the number density of the filler in the filler-containing film such as an anisotropic conductive film. . For example, in the design of a film containing a filler such as an anisotropic conductive film, the arrangement of the filler is the same as that of the first filler layer and the second filler layer, and the number density of each is set to, for example, 400 pieces/mm 2 , according to In the above-mentioned production method, the absolute value of the difference in number density between one end and the other end in the longitudinal direction of a film containing a filler such as an anisotropic conductive film actually produced is preferably 160 pieces/mm 2 or less, more preferably 160 pieces/mm 2 or less. 80 particles/mm 2 or less. Similarly, when the number density of the conductive particles of the first filler layer and the second filler layer is set to 65,000 particles/mm 2 , respectively, the longitudinal direction of the anisotropic conductive film is The absolute value of the difference in number density between one end and the other end is preferably 26,000 pieces/mm 2 or less, and more preferably 13,000 pieces/mm 2 or less. That is, the absolute value of the difference in number density between one end and the other end in the longitudinal direction of a film containing a filler such as an anisotropic conductive film is the average of the number density of conductive particles in the total of the first filler layer and the second filler layer. That is, 800 to 130,000 pieces/mm 2 is preferably within the range of ±20%, more preferably within the range of ±10%. Furthermore, the present invention does not exclude the case where the number density is less than 400/mm 2 . In addition, although this invention was demonstrated using an anisotropic conductive film as an example, it is not limited to this. For example, in an optical film, it can be easily estimated that the performance can be stabilized by making the number density uniform. The same can be said for those directly related to appearance, such as matte films.

附著於樹脂層2之填料1A、1B之埋入量可藉由填料1A、1B之壓入時之按壓力、溫度等進行調整,又,凹陷2x、2y之有無、形狀及深度可藉由壓入時之樹脂層2之黏度、壓入速度、溫度等進行調整。作為使埋入率超過100%之壓入方法,可列舉利用具有與填料之排列對應之凸部之壓板進行壓入之方法。 The filling amount of the fillers 1A and 1B attached to the resin layer 2 can be adjusted by the pressing force and temperature when the fillers 1A and 1B are pressed, and the presence or absence, shape and depth of the depressions 2x and 2y can be adjusted by pressing the fillers 1A and 1B. The viscosity, press-in speed, temperature, etc. of the resin layer 2 in time are adjusted. As a press-fitting method for making the embedding rate exceed 100%, a method of press-fitting using a press plate having convex portions corresponding to the arrangement of the fillers is exemplified.

形成為長條之各向異性導電膜等含有填料之膜係適當截斷而以卷裝體之形式成為各向異性導電膜等含有填料之膜之製品。因此,本發明之各向異性導電膜等含有填料之膜例如具有5~5000m之長度而可製成卷裝體。 Films containing fillers such as anisotropic conductive films formed into long strips are appropriately cut to form a product of films containing fillers such as anisotropic conductive films in the form of rolls. Therefore, the film containing a filler, such as the anisotropic conductive film of this invention, has a length of 5-5000 m, for example, and can be used as a roll body.

為了使用含有填料之膜所包含之各向異性導電膜經濟地進行電子零件之連接,各向異性導電膜較佳為一定程度之長條。因此,各向異性導電膜較佳為將長度製造成5m以上,更佳為10m以上,進而較佳為25m以上。另一 方面,若各向異性導電膜過長,則無法使用利用各向異性導電膜進行電子零件之製造之情形時使用之以往之連接裝置,操作性亦較差。因此,各向異性導電膜較佳為將長度製造成5000m以下,更佳為1000m以下,進而較佳為500m以下。各向異性導電膜之此種長條體就操作性優異之方面而言,較佳為製成捲繞於卷芯之卷裝體。 In order to economically perform connection of electronic parts using the anisotropic conductive film included in the film containing the filler, the anisotropic conductive film is preferably elongated to some extent. Therefore, the length of the anisotropic conductive film is preferably 5 m or more, more preferably 10 m or more, and still more preferably 25 m or more. On the other hand, if the anisotropic conductive film is too long, the conventional connection device used in the case of manufacturing electronic components using the anisotropic conductive film cannot be used, and the operability is also poor. Therefore, the length of the anisotropic conductive film is preferably 5000 m or less, more preferably 1000 m or less, and still more preferably 500 m or less. Such an elongated body of the anisotropic conductive film is preferably used as a package wound around a core in terms of excellent handleability.

<含有填料之膜之使用方法> <How to use the film containing filler>

本發明之含有填料之膜可與以往之含有填料之膜同樣地使用,只要可貼合含有填料之膜,則對物品無特別限制。可對與含有填料之膜之用途相應之各種物品藉由壓接、較佳為藉由熱壓接合進行貼合。於該貼合時,可利用光照射,亦可將熱與光併用。例如,於含有填料之膜之樹脂層對貼合該含有填料之膜之物品具有充分之黏著性之情形時,可藉由將含有填料之膜之樹脂層輕輕地壓抵於物品而獲得含有填料之膜貼合於一個物品之表面而成之膜貼合體。於此情形時,物品之表面不限於平面,可具有凹凸,亦可整體彎曲。於物品為膜狀或平板狀之情形時,可使用壓接輥將含有填料之膜貼合於該等物品。藉此,亦可使含有填料之膜之填料與物品直接接合。 The filler-containing film of the present invention can be used in the same manner as the conventional filler-containing film, and the article is not particularly limited as long as the filler-containing film can be bonded. Various articles according to the application of the filler-containing film can be bonded by crimping, preferably by thermocompression bonding. At the time of this bonding, light irradiation may be utilized, and heat and light may be used together. For example, when the resin layer of the filler-containing film has sufficient adhesiveness to the article to which the filler-containing film is attached, the resin layer of the filler-containing film can be gently pressed against the article to obtain the resin layer containing the filler. A film-laminated body formed by laminating the film of the filler on the surface of an article. In this case, the surface of the article is not limited to a flat surface, and may have concavities and convexities, and may also be curved as a whole. When the article is in the form of a film or a flat plate, the film containing the filler can be attached to the article using a pressing roller. Thereby, the filler of the film containing the filler can also be directly bonded to the article.

又,亦可使含有填料之膜介置於對向之2個物品之間,利用熱壓接合輥或壓接工具將對向之2個物品接合,於該物品間夾持填料。又,亦可使填料與物品不直接接觸,而利用物品夾入含有填料之膜。 In addition, the film containing the filler may be interposed between the two opposing articles, the two opposing articles may be joined by a thermocompression bonding roller or a crimping tool, and the filler may be sandwiched between the articles. In addition, the filler and the article may not be in direct contact with each other, and the article may be used to sandwich the film containing the filler.

尤其是於將含有填料之膜設為各向異性導電膜之情形時,於使用熱壓接合工具經由該各向異性導電膜將IC晶片、IC模組、FPC等第1電子零件與FPC、玻璃基板、塑膠基板、剛性基板、陶瓷基板等第2電子零件進行各向異性導電連接時,可較佳地使用。可使用各向異性導電膜將IC晶片或晶圓堆疊而多層化。再者,利用本發明之各向異性導電膜連接之電子零件並不限定於上述電子零件。可用於近年來多樣化之各種電子零件。 In particular, when the film containing the filler is used as an anisotropic conductive film, the first electronic components such as IC chips, IC modules, and FPCs are bonded to FPC, glass, etc. through the anisotropic conductive film using a thermocompression bonding tool. It can be preferably used for anisotropic conductive connection of second electronic components such as substrates, plastic substrates, rigid substrates, and ceramic substrates. IC chips or wafers can be stacked and multi-layered using anisotropic conductive films. In addition, the electronic component connected by the anisotropic conductive film of this invention is not limited to the said electronic component. It can be used for various electronic parts which have been diversified in recent years.

因此,本發明包含藉由壓接將本發明之含有填料之膜貼合於各種物品而成之連接構造體、或其製造方法。尤其是於將含有填料之膜設為各向異性導電膜之情形時,亦包含:使用該各向異性導電膜將電子零件彼此進行各向異性導電連接之連接構造體之製造方法、或藉此所獲得之連接構造體、即藉由本發明之各向異性導電膜將電子零件彼此進行各向異性導電連接而成之連接構造體。 Therefore, the present invention includes a connection structure formed by bonding the filler-containing film of the present invention to various articles by crimping, and a method for producing the same. In particular, when the film containing the filler is used as an anisotropic conductive film, it also includes: a method for producing a connection structure for anisotropically conductively connecting electronic components to each other using the anisotropic conductive film, or The obtained connection structure is a connection structure which anisotropically conductively connected electronic components to each other by the anisotropic conductive film of the present invention.

作為使用有各向異性導電膜之電子零件之連接方法,於各向異性導電膜由導電粒子分散層之單層所構成之情形時,可藉由如下方式而製造:對各種基板等第2電子零件自各向異性導電膜之表面埋入有導電粒子之側進行暫時貼附並暫時壓接,將IC晶片等第1電子零件重疊於經暫時壓接之各向異性導電膜之表面未埋入導電粒子之側,並進行熱壓接合。於各向異性導電膜之絕緣性樹脂層不僅包含熱聚合起始劑及熱聚合性化合物而且包含光聚合起始劑及光聚合性化合物(亦可與熱聚合性化合物相同)之情形時,亦可為將光與熱併用之壓接方法。若如此,則可將導電粒子之意外移動抑制為最小限度。又,亦可將未埋入導電粒子之側暫時貼附於第2電子零件而使用。再者,亦可將各向異性導電膜暫時貼附於第1電子零件而非第2電子零件。 As a method of connecting electronic components using an anisotropic conductive film, when the anisotropic conductive film is composed of a single layer of a conductive particle-dispersed layer, it can be produced as follows: The parts are temporarily attached and temporarily crimped from the side where the conductive particles are embedded in the surface of the anisotropic conductive film, and the first electronic component such as an IC chip is superimposed on the surface of the temporarily crimped anisotropic conductive film without embedding conductive side of the particles and thermocompression bonding. When the insulating resin layer of the anisotropic conductive film contains not only a thermal polymerization initiator and a thermal polymerizable compound but also a photopolymerization initiator and a photopolymerizable compound (which may be the same as the thermal polymerizable compound), A crimping method that combines light and heat is available. In this way, unexpected movement of the conductive particles can be suppressed to a minimum. Moreover, it can also be used by temporarily attaching the side where the conductive particles are not embedded to the second electronic component. Furthermore, the anisotropic conductive film may be temporarily attached to the first electronic component instead of the second electronic component.

又,於各向異性導電膜由導電粒子分散層與第2絕緣性樹脂層之積層體所形成之情形時,將導電粒子分散層暫時貼附於各種基板等第2電子零件並暫時壓接,將IC晶片等第1電子零件對準並載置於經暫時壓接之各向異性導電膜之第2絕緣性樹脂層側,並進行熱壓接合。亦可將各向異性導電膜之第2絕緣性樹脂層側暫時貼附於第1電子零件。又,亦可將導電粒子分散層側暫時貼附於第1電子零件而使用。 Furthermore, when the anisotropic conductive film is formed of a laminate of the conductive particle-dispersed layer and the second insulating resin layer, the conductive particle-dispersed layer is temporarily attached to the second electronic parts such as various substrates and temporarily crimped. The first electronic components, such as an IC chip, are aligned and mounted on the side of the second insulating resin layer of the anisotropic conductive film temporarily crimped, and thermocompression bonding is performed. The second insulating resin layer side of the anisotropic conductive film may be temporarily attached to the first electronic component. Moreover, it can also be used by temporarily sticking the conductive particle-dispersed layer side to the first electronic component.

實施例 Example

以下,針對本發明之含有填料之膜之一態樣之各向異性導電膜, 藉由實施例具體地進行說明。 Hereinafter, the anisotropic conductive film which is one aspect of the filler-containing film of the present invention will be specifically described by way of Examples.

(1)各向異性導電膜之製造 (1) Manufacture of anisotropic conductive film

(1-1)實施例1A、1B~實施例8 (1-1) Example 1A, 1B ~ Example 8

以表1所示之配比製備形成(i)形成導電粒子分散層之高黏度之第1絕緣性樹脂層(以下,亦稱為A層)、(ii)黏度低於第1絕緣性樹脂層之第2絕緣性樹脂層(以下,亦稱為N層)、及(iii)形成黏性層之第3絕緣性樹脂層的樹脂組成物。 Prepare a high-viscosity first insulating resin layer (hereinafter, also referred to as layer A) for forming the conductive particle dispersion layer (i) in the proportions shown in Table 1, and (ii) having a lower viscosity than the first insulating resin layer The second insulating resin layer (hereinafter, also referred to as the N layer), and (iii) the resin composition of the third insulating resin layer forming the adhesive layer.

利用棒式塗佈機將形成第1絕緣性樹脂層(A層)之樹脂組成物塗佈於膜厚度50μm之PET膜上,於80℃之烘箱使之乾燥5分鐘,於PET膜上形成表2所示之厚度之絕緣性樹脂層。同樣地,分別以表3所示之厚度於PET膜上形成第2絕緣性樹脂層(N層)及第3絕緣性樹脂層(黏性層)。 The resin composition for forming the first insulating resin layer (layer A) was coated on a PET film with a film thickness of 50 μm using a bar coater, dried in an oven at 80° C. for 5 minutes, and a surface was formed on the PET film. The insulating resin layer of the thickness shown in 2. Similarly, the 2nd insulating resin layer (N layer) and the 3rd insulating resin layer (adhesive layer) were formed on the PET film by the thickness shown in Table 3, respectively.

Figure 106135620-A0202-12-0038-1
Figure 106135620-A0202-12-0038-1

另一方面,以第1導電粒子層之導電粒子(平均粒徑3μm)於俯視下為圖1A所示之正方格子排列且導電粒子之面密度如表2所示般於FOG用時成為800個/mm2(實施例1A、1B)、或如表3所示般於COG用時成為10000、20000或30000個/mm2(實施例2~8)之方式製作模具。即,以模具之凸部圖案為正方格子排列且格子軸與各向異性導電膜之短邊方向所成之角度θ成為15°之方式製 作模具,將公知之透明性樹脂之顆粒以熔融之狀態流入至該模具,並進行冷卻而凝固,藉此將凹部為圖1A所示之排列圖案之樹脂模具形成為輥狀。 On the other hand, the conductive particles (average particle size: 3 μm) of the first conductive particle layer are arranged in a square lattice as shown in FIG. 1A in plan view, and the areal density of the conductive particles is 800 in the case of FOG as shown in Table 2. /mm 2 (Examples 1A, 1B), or as shown in Table 3, a mold was produced so that it became 10,000, 20,000, or 30,000 pieces/mm 2 (Examples 2 to 8) for COG. That is, a mold was prepared so that the convex part pattern of the mold was arranged in a square lattice and the angle θ formed by the lattice axis and the short-side direction of the anisotropic conductive film was 15°, and pellets of a known transparent resin were melted. The resin mold having the concave portion in the arrangement pattern shown in FIG. 1A is formed into a roll shape by flowing into the mold, cooling and solidifying.

於該樹脂模具之凹部填充導電粒子(積水化學工業(股),AUL703,平均粒徑3μm),於其上被覆上述第1絕緣性樹脂層(A層),並使用加壓輥以60℃、0.5MPa進行按壓,藉此自第1絕緣性樹脂層之一端朝另一端橫跨長度300m貼合導電粒子。繼而,自模具剝離第1絕緣性樹脂層(A層),將第1絕緣性樹脂層(A層)上之導電粒子藉由加壓輥(按壓條件:70℃、0.5MPa)壓入至該第1絕緣性樹脂層(A層),而形成第1導電粒子層。壓入率設為100%,使導電粒子與第1絕緣性樹脂層(A層)之表面成為同一平面。於所壓入之導電粒子之周圍,相對於鄰接之導電粒子間之中央部上之第1絕緣性樹脂層之切平面形成有凹陷。 The concave part of the resin mold was filled with conductive particles (Sekisui Chemical Industry Co., Ltd., AUL703, average particle size: 3 μm), and the first insulating resin layer (layer A) was covered thereon, and was heated at 60° C., By pressing at 0.5 MPa, the conductive particles were bonded across a length of 300 m from one end to the other end of the first insulating resin layer. Next, the first insulating resin layer (layer A) was peeled off from the mold, and the conductive particles on the first insulating resin layer (layer A) were pressed into the first insulating resin layer (layer A) by a pressing roller (pressing conditions: 70° C., 0.5 MPa). The first insulating resin layer (layer A) forms the first conductive particle layer. The indentation rate was set to 100%, and the conductive particles and the surface of the first insulating resin layer (layer A) were made flush. A depression is formed around the pressed conductive particle with respect to the tangent plane of the first insulating resin layer on the central portion between the adjacent conductive particles.

繼而,於第1絕緣性樹脂層(A層)之壓入有導電粒子之面藉由加熱加壓(45℃、0.5MPa)貼合第2絕緣性樹脂層(N層),於其相反側之面以與上述相同之方式橫跨長度300m附著導電粒子,並將導電粒子壓入,藉此形成第2導電粒子層,獲得導電粒子分散層。於此情形時,先壓入之導電粒子(第1導電粒子層)與後壓入之導電粒子(第2導電粒子層)於膜短邊方向錯開3μm。使附著導電粒子之第1絕緣性樹脂層之移行方向與形成第1導電粒子層之情形反轉。又,於形成第2導電粒子層之情形時,亦將壓入率設為100%,使導電粒子與第1絕緣性樹脂層(A層)之表面成為同一平面。於所壓入之導電粒子之周圍,相對於鄰接之導電粒子間之中央部上之第1絕緣性樹脂層之切平面形成有凹陷。 Next, the second insulating resin layer (N layer) was bonded to the surface of the first insulating resin layer (A layer) on which the conductive particles were pressed by heating and pressurizing (45° C., 0.5 MPa), and the opposite side was attached to the second insulating resin layer (N layer). In the same manner as above, conductive particles were attached to the surface over a length of 300 m, and the conductive particles were pressed to form a second conductive particle layer, thereby obtaining a conductive particle-dispersed layer. In this case, the conductive particles (1st conductive particle layer) pressed first and the conductive particles pressed later (2nd conductive particle layer) are shifted by 3 μm in the film short-side direction. The moving direction of the first insulating resin layer to which the conductive particles were adhered was reversed from that in which the first conductive particle layer was formed. Moreover, also in the case of forming the 2nd conductive particle layer, the indentation rate was made into 100%, and the surface of the conductive particle and the 1st insulating resin layer (A layer) was made into the same plane. A depression is formed around the pressed conductive particle with respect to the tangent plane of the first insulating resin layer on the central portion between the adjacent conductive particles.

實施例1A、2、3、4、6、7、8中,將以上述方式所獲得之導電粒子分散層設為各向異性導電膜。實施例1B中,使成為第1導電粒子層之導電粒子附著於第1絕緣性樹脂層時膜之移行方向與成為第2導電粒子層之導電粒子附著於第1絕緣性樹脂層時膜之移行方向相同。 In Examples 1A, 2, 3, 4, 6, 7, and 8, the conductive particle-dispersed layers obtained as described above were used as anisotropic conductive films. In Example 1B, the moving direction of the film when the conductive particles serving as the first conductive particle layer were adhered to the first insulating resin layer and the moving direction of the film when the conductive particles serving as the second conductive particle layer were adhered to the first insulating resin layer same direction.

實施例5中,於導電粒子分散層之與第2絕緣性樹脂層(N層)相反側之面,藉由加熱加壓(45℃、0.5MPa)貼合第3絕緣性樹脂層(黏性層)。 In Example 5, the third insulating resin layer (viscosity) was attached to the surface of the conductive particle dispersion layer on the opposite side of the second insulating resin layer (N layer) by heating and pressing (45°C, 0.5MPa). Floor).

於各實施例之自各向異性導電膜之一端至另一端之長度300m之區域內,於長邊方向不同之位置設定10處1邊為200μm之矩形區域作為導電粒子之個數密度之測量區域,於該測量區域利用金屬顯微鏡觀察第1導電粒子層及第2導電粒子層,求出各導電粒子層中之導電粒子之個數密度,對自上述一端至另一端之導電粒子之個數密度之變動傾向(增加或減少之傾向)進行研究。將結果示於表2及表3。 In the area of 300 m in length from one end to the other end of the anisotropic conductive film in each embodiment, 10 rectangular areas with one side of 200 μm are set at different positions in the longitudinal direction as the measurement area for the number density of conductive particles. In the measurement area, the first conductive particle layer and the second conductive particle layer are observed with a metal microscope, and the number density of the conductive particles in each conductive particle layer is obtained. The tendency to change (tendency to increase or decrease) is studied. The results are shown in Table 2 and Table 3.

(1-2)比較例1~3 (1-2) Comparative Examples 1 to 3

與實施例1同樣地形成表1所示之樹脂組成之第1絕緣性樹脂層(A層)、第2絕緣性樹脂層(N層)、第3絕緣性樹脂層(黏性層)。 The first insulating resin layer (A layer), the second insulating resin layer (N layer), and the third insulating resin layer (adhesive layer) having the resin compositions shown in Table 1 were formed in the same manner as in Example 1.

其中,比較例1中,使導電粒子均勻地分散於形成第1絕緣性樹脂層(A層)之樹脂組成物中,將其塗佈於PET膜並進行乾燥,藉此形成以面密度40000個/mm2單分散有導電粒子之導電粒子分散層。 However, in Comparative Example 1, conductive particles were uniformly dispersed in the resin composition forming the first insulating resin layer (layer A), coated on a PET film, and dried to form an area density of 40,000 particles. /mm 2 Conductive particle dispersion layer in which conductive particles are monodispersed.

比較例2中,以面密度40000個/mm2僅形成成為第2絕緣性樹脂層(N層)側之第1導電粒子層作為導電粒子層,除此以外,以與實施例2相同之方式製造各向異性導電膜。 In Comparative Example 2, the same procedure as in Example 2 was carried out, except that only the first conductive particle layer on the second insulating resin layer (N layer) side was formed as the conductive particle layer with an areal density of 40,000 pieces/mm 2 An anisotropic conductive film is produced.

比較例3中,以面密度40000個/mm2僅形成成為第2絕緣性樹脂層(N層)之相反側之第2導電粒子層作為導電粒子層,除此以外,以與實施例2相同之方式製造各向異性導電膜。 In Comparative Example 3, the same procedure as in Example 2 was performed except that only the second conductive particle layer on the opposite side of the second insulating resin layer (N layer) was formed as the conductive particle layer with an areal density of 40,000 pieces/mm 2 The anisotropic conductive film is produced in this way.

針對比較例1~3之各向異性導電膜,亦對自其一端至另一端之導電粒子之個數密度之變動傾向(增加或減少之傾向)進行研究。將結果示於表2及表3。 Regarding the anisotropic conductive films of Comparative Examples 1 to 3, the variation tendency (increase or decrease tendency) of the number density of the conductive particles from one end to the other end was also examined. The results are shown in Table 2 and Table 3.

(2)評價 (2) Evaluation

對(1)所製作之實施例及比較例之各向異性導電膜,以對於連接而言充分之面積截斷,以如下方式對(a)初期導通電阻、(b)可靠性試驗後之導通電阻、(c)粒子捕捉性、(d)短路率、(e)暫時壓接性進行測量或評價。將結果示於表2及表3。 (1) The anisotropic conductive films of Examples and Comparative Examples were cut with an area sufficient for connection, and (a) initial on-resistance and (b) on-resistance after reliability test were measured as follows , (c) particle trapping property, (d) short circuit rate, (e) temporary crimping property are measured or evaluated. The results are shown in Table 2 and Table 3.

於此情形時,作為供於評價之試樣,實施例1A及實施例1B(FOG用各向異性導電膜)中使用長度300m之各向異性導電膜之長邊方向之一端及另一端,實施例2~8及比較例1~3(COG用各向異性導電膜)中使用各向異性導電膜之長邊方向之中間部分(距一端150m之部分)。 In this case, as samples for evaluation, one end and the other end in the longitudinal direction of an anisotropic conductive film with a length of 300 m were used in Example 1A and Example 1B (anisotropic conductive film for FOG), and the In Examples 2 to 8 and Comparative Examples 1 to 3 (anisotropic conductive film for COG), the middle part in the longitudinal direction of the anisotropic conductive film (the part 150 m from one end) was used.

(a)初期導通電阻 (a) Initial on-resistance

(a1)FOG用各向異性導電膜之導通特性之評價(實施例1A、1B) (a1) Evaluation of conduction characteristics of anisotropic conductive film for FOG (Examples 1A, 1B)

將各向異性導電膜之試樣夾於導通特性之評價用FPC與玻璃基板之間,工具寬度1.5mm,進行加熱加壓(200℃、5MPa、5秒),而獲得各評價用連接物,並對所獲得之評價用連接物之導通電阻進行測量。初期導通電阻實用上較理想為1Ω以下。因此,將初期導通電阻1Ω以下設為OK,將超過1Ω之情形設為NG。 The sample of the anisotropic conductive film was sandwiched between the FPC for evaluation of conduction characteristics and the glass substrate, and the tool width was 1.5 mm, and heated and pressurized (200° C., 5 MPa, 5 seconds) to obtain each evaluation connector. The on-resistance of the obtained connector for evaluation was measured. The initial on-resistance is practically preferably 1Ω or less. Therefore, the initial on-resistance of 1Ω or less was set as OK, and the case where it exceeded 1Ω was set as NG.

此處,關於評價用FPC及玻璃基板,該等之端子圖案對應,尺寸如下。又,於將評價用FPC與玻璃基板連接時,將各向異性導電膜之長邊方向與端子之短邊方向對齊。 Here, regarding the FPC for evaluation and the glass substrate, these terminal patterns correspond, and the dimensions are as follows. Moreover, when connecting the FPC for evaluation and a glass substrate, the longitudinal direction of an anisotropic conductive film was aligned with the short-side direction of a terminal.

導通特性之評價用FPC FPC for evaluation of conduction characteristics

端子間距50μm Terminal pitch 50μm

端子寬度:端子間間隔=1:1 Terminal width: Spacing between terminals = 1:1

聚醯亞胺膜厚/銅箔厚(PI/Cu)=38/8,鍍錫(Sn plating) Polyimide film thickness/copper foil thickness (PI/Cu)=38/8, tin plating (Sn plating)

玻璃基板 Glass base board

電極ITO塗層(ITO coating) Electrode ITO coating (ITO coating)

厚度0.7mm Thickness 0.7mm

(a2)COG用各向異性導電膜之導通特性之評價(實施例2~8、比較例1~3) (a2) Evaluation of conduction characteristics of anisotropic conductive film for COG (Examples 2 to 8, Comparative Examples 1 to 3)

將各向異性導電膜之試樣夾入於導通特性之評價用IC與玻璃基板之間,並進行加熱加壓(180℃、80MPa、5秒)而獲得各評價用連接物,對所獲得之評價用連接物之導通電阻進行測量。初期導通電阻實用上較理想為1Ω以下。因此,將初期導通電阻1Ω以下評價為OK,將超過1Ω之情形評價為NG。 The samples of the anisotropic conductive film were sandwiched between the IC for evaluation of conduction characteristics and the glass substrate, and heated and pressurized (180° C., 80 MPa, 5 seconds) to obtain connectors for each evaluation. The on-resistance of the connector for evaluation was measured. The initial on-resistance is practically preferably 1Ω or less. Therefore, the initial on-resistance of 1Ω or less was evaluated as OK, and the case where it exceeded 1Ω was evaluated as NG.

此處,關於評價用IC及玻璃基板,該等之端子圖案對應,尺寸如下。又,於將評價用IC與玻璃基板連接時,使各向異性導電膜之長邊方向與凸塊之短邊方向對齊。 Here, regarding the IC for evaluation and the glass substrate, these terminal patterns correspond, and the dimensions are as follows. Moreover, when connecting the IC for evaluation and a glass substrate, the longitudinal direction of an anisotropic conductive film was made to align with the short side direction of a bump.

導通特性之評價用IC IC for evaluation of conduction characteristics

外形1.8×20.0mm Outline 1.8×20.0mm

厚度0.5mm Thickness 0.5mm

凸塊規格尺寸30×85μm、凸塊間距離50μm、凸塊高度15μm Bump size 30×85μm, distance between bumps 50μm, bump height 15μm

玻璃基板 Glass base board

玻璃材質Corning公司製造之1737F Glass material Corning 1737F

外形30×50mm Appearance 30×50mm

厚度0.5mm Thickness 0.5mm

電極ITO配線 Electrode ITO wiring

(b)可靠性試驗後之導通電阻 (b) On-resistance after reliability test

對使(a)中製作之評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時後之導通電阻以與初期導通電阻同樣之方式進行測量。可靠性試驗後之導通電阻實用上較理想為6Ω以下。因此,將6Ω以下設為OK,將超過6Ω之情形設為NG。 The on-resistance after allowing the connector for evaluation produced in (a) to stand for 500 hours in a constant temperature bath with a temperature of 85° C. and a humidity of 85% RH was measured in the same manner as the initial on-resistance. The on-resistance after the reliability test is practically preferably 6Ω or less. Therefore, 6Ω or less is set as OK, and when it exceeds 6Ω, it is set as NG.

(c)粒子捕捉性 (c) Particle capture properties

(c1)FOG用各向異性導電膜之粒子捕捉性之評價(實施例1A、1B) (c1) Evaluation of particle trapping properties of anisotropic conductive film for FOG (Examples 1A, 1B)

於導通特性評價用之連接物中,針對連接部分之FPC端子中之100個25×400μm之區域,測量導電粒子之捕捉數,求出最低捕捉數,按照如下基準進行評價。 In the connector for evaluation of conduction characteristics, the number of trapped conductive particles was measured for 100 regions of 25×400 μm in the FPC terminals of the connection portion, and the minimum trapped number was obtained, and the evaluation was performed according to the following criteria.

A(良好):3個以上 A (good): 3 or more

B(實用上無問題):未達3個 B (practically no problem): less than 3

(c2)COG用各向異性導電膜之粒子捕捉性之評價(實施例2~8、比較例1~3) (c2) Evaluation of particle trapping properties of anisotropic conductive film for COG (Examples 2 to 8, Comparative Examples 1 to 3)

使用粒子捕捉性之評價用IC,使該評價用IC與端子圖案對應之玻璃基板錯開6μm對準並進行加熱加壓(180℃、80MPa、5秒),針對評價用IC之凸塊與基板之端子重疊之100個6μm×66.6μm之區域測量導電粒子之捕捉數,求出最低捕捉數,並按照如下基準進行評價。實用上,較佳為B評價以上。 Using the IC for evaluation of particle trapping properties, the IC for evaluation and the glass substrate corresponding to the terminal pattern are aligned with a 6 μm shift, and heat and pressure are applied (180° C., 80 MPa, 5 seconds), and the bumps of the IC for evaluation and the substrate are aligned. The number of trapped conductive particles was measured in 100 regions of 6 μm×66.6 μm where the terminals overlap, and the minimum trapped number was obtained, and evaluated according to the following criteria. Practically, the B evaluation or more is preferable.

粒子捕捉性之評價用IC IC for evaluation of particle capture performance

外形1.6×29.8mm Outline 1.6×29.8mm

厚度0.3mm Thickness 0.3mm

凸塊規格尺寸12×66.6μm、凸塊間距22μm、凸塊高度12μm Bump size 12×66.6μm, bump pitch 22μm, bump height 12μm

粒子捕捉性評價基準 Particle Capture Performance Evaluation Criteria

A(良好):5個以上 A (good): 5 or more

B(實用上無問題):3個以上且未達5個 B (practically no problem): 3 or more but less than 5

C(不良):未達3個 C (bad): less than 3

(d)短路率 (d) Short circuit rate

(d1)FOG用各向異性導電膜之短路率之評價(實施例1A、1B) (d1) Evaluation of short-circuit rate of anisotropic conductive film for FOG (Examples 1A, 1B)

將與導通特性之評價用FPC相同之FPC加熱加壓(200℃、5MPa、5秒)於無鹼玻璃(厚度0.7mm),並對所獲得之評價用連接物之短路數進行測量,根據所測得之短路數及評價用連接物之間隙數求出短路產生率,並按照如下基準進 行評價。 Heat and pressurize (200°C, 5MPa, 5 seconds) the same FPC as the FPC used for the evaluation of conduction characteristics on an alkali-free glass (thickness 0.7mm), and measure the number of short circuits of the obtained connectors for evaluation. The short circuit occurrence rate was calculated|required from the measured number of short circuits and the number of gaps of the connector for evaluation, and it evaluated based on the following standards.

A(良好):未達50ppm A (good): less than 50ppm

B(實用上無問題):50ppm以上且未達200ppm B (practically no problem): 50 ppm or more and less than 200 ppm

C(不良):200ppm以上 C (bad): 200ppm or more

(d2)COG用各向異性導電膜之短路率之評價(實施例2~8、比較例1~3) (d2) Evaluation of Short Circuit Rate of Anisotropic Conductive Film for COG (Examples 2 to 8, Comparative Examples 1 to 3)

使用短路率之評價用IC,以與(a)初期導通電阻之評價相同之方式獲得評價用連接物,並對所獲得之評價用連接物之短路數進行測量,根據所測得之短路數及評價用連接物之間隙數求出短路產生率,並按照如下基準進行評價。 Using the IC for evaluation of the short-circuit rate, obtain a connector for evaluation in the same manner as (a) for the evaluation of the initial on-resistance, and measure the number of shorts of the obtained connector for evaluation. According to the measured number of shorts and The short-circuit occurrence rate was determined from the number of gaps in the connector for evaluation, and the evaluation was performed according to the following criteria.

短路率之評價用IC(7.5μm間隔之梳齒TEG(test element group,測試元件組)) IC for short-circuit rate evaluation (comb-teeth TEG (test element group) with 7.5 μm spacing)

外形15×13mm Appearance 15×13mm

厚度0.5mm Thickness 0.5mm

凸塊規格尺寸25×140μm、凸塊間距離7.5μm、凸塊高度15μm Bump size 25×140μm, distance between bumps 7.5μm, bump height 15μm

短路率評價基準 Short circuit rate evaluation standard

A:未達50ppm A: less than 50ppm

B:50ppm以上且未達200ppm B: 50ppm or more and less than 200ppm

C:200ppm以上 C: 200ppm or more

(e)暫時壓接性 (e) Temporary crimpability

使用壓接工具,將附PET膜之各向異性導電膜(寬度1.5mm、長度50mm)以溫度60℃或70℃、壓接壓力1MPa、壓接時間1秒壓抵於ITO玻璃,藉此進行暫時壓接。於此情形時,使350μm厚之矽橡膠介置於壓接工具與PET膜之間作為緩衝材。針對100個以此方式將各向異性導電膜壓抵於ITO玻璃而得之暫時壓接樣品,將PET膜剝下。此時,對暫時壓接之成功與否,為方便起見,將各向異性導 電膜1個都未與PET膜一起自ITO玻璃剝離之情形判定為OK,將即便有1個剝離之情形判定為NG。 Using a crimping tool, the anisotropic conductive film with PET film (width 1.5mm, length 50mm) is pressed against ITO glass at a temperature of 60°C or 70°C, a crimping pressure of 1MPa, and a crimping time of 1 second. Temporarily crimp. In this case, 350 μm thick silicone rubber was interposed between the crimping tool and the PET film as a buffer material. The PET film was peeled off about 100 temporary pressure-bonded samples obtained by pressing the anisotropic conductive film against the ITO glass in this manner. At this time, regarding the success of temporary crimping, for the sake of convenience, the case where none of the anisotropic conductive films was peeled off from the ITO glass together with the PET film was determined as OK, and the case where even one peeled off was determined as OK. for NG.

A:於60℃以上為OK A: Above 60℃ is OK

B:於70℃以上為OK B: OK above 70°C

C:於70℃以上為NG C: NG above 70°C

Figure 106135620-A0202-12-0045-2
Figure 106135620-A0202-12-0045-2

Figure 106135620-A0202-12-0046-3
Figure 106135620-A0202-12-0046-3

如表2所示,於絕緣性樹脂層之正面之表面分別以埋入率100%埋入有導電粒子,自各向異性導電膜之長邊方向之一端至另一端,導電粒子之個數密度之增減傾向在第1導電粒子層與第2導電粒子層中為相反方向的實施例1A中,於各向異性導電膜之一端及另一端,於導通電阻、導通電阻之可靠性、粒子捕捉率、短路率、暫時壓接性之任一者中均獲得了良好之評價。與此相對,該個數密度之增減傾向在第1導電粒子層與第2導電粒子層一致之實施例1B中,第1導電粒子層與第2導電粒子層總共之導電粒子之個數密度變低之膜一端中存在粒子捕捉性較差之部分,個數密度變高之膜另一端獲得了包含粒子捕捉性在內之良好之評價。再者,該評價中,由於連接面積充分,故而判斷即便為未達3 個之B評價,實用上亦無問題。 As shown in Table 2, conductive particles are embedded in the surface of the front surface of the insulating resin layer at an embedding rate of 100%. From one end to the other end in the longitudinal direction of the anisotropic conductive film, the number density of the conductive particles In Example 1A in which the first conductive particle layer and the second conductive particle layer were in opposite directions, the increase and decrease tendencies were observed in on-resistance, reliability of on-resistance, and particle capture rate at one end and the other end of the anisotropic conductive film. , short-circuit rate, and temporary crimping properties were evaluated as favorable. On the other hand, in Example 1B in which the number density of the first conductive particle layer and the second conductive particle layer were the same, the number density of the total number of conductive particles in the first conductive particle layer and the second conductive particle layer was One end of the film having a lower value has a portion with poor particle capture ability, and the other end of the film having a higher number density obtained a good evaluation including particle capture ability. In addition, in this evaluation, since the connection area is sufficient, it is judged that there is no practical problem even if it is the B evaluation of less than three.

如表3所示,實施例2~8之各向異性導電膜亦於絕緣性樹脂層之正背之表面分別以埋入率100%埋入有導電粒子,各向異性導電膜之長邊方向上之導電粒子之個數密度之增減傾向於第1導電粒子層與第2導電粒子層中為相反方向,於任一評價項目中均為良好。尤其是根據實施例2及實施例5,可知:本發明之各向異性導電膜即便不設置黏性層,暫時貼附性亦良好、作業性優異,而且粒子捕捉性亦優異。 As shown in Table 3, the anisotropic conductive films of Examples 2 to 8 are also embedded with conductive particles on the front and back surfaces of the insulating resin layers at an embedding rate of 100%, respectively. The longitudinal direction of the anisotropic conductive films The increase and decrease in the number density of the conductive particles above tended to be in opposite directions in the first conductive particle layer and the second conductive particle layer, and were favorable in any evaluation item. In particular, from Example 2 and Example 5, it can be seen that the anisotropic conductive film of the present invention is excellent in temporary adhesion, excellent in workability, and excellent in particle trapping property even if no adhesive layer is provided.

又,根據比較例1,可知:若導電粒子單分散於導電粒子分散層,則粒子捕捉性及短路率均較差。根據比較例2,可知:若導電粒子層僅形成於第2絕緣性樹脂層(N層)側,則粒子捕捉性較差;根據比較例3,可知:若導電粒子層僅形成於與第2絕緣性樹脂層(N層)相反之側,則暫時壓接性較差。再者,比較例3中,若將暫時壓接溫度設為75℃,則即便將暫時壓接樣品設為500個,各向異性導電膜亦未自ITO玻璃剝離,因而可確認比較例3根據暫時壓接溫度之設定,可供於實際使用。 In addition, according to Comparative Example 1, it was found that when the conductive particles were monodispersed in the conductive particle dispersion layer, both the particle trapping properties and the short-circuit rate were poor. From Comparative Example 2, it was found that if the conductive particle layer was formed only on the side of the second insulating resin layer (N layer), the particle trapping property was poor; from Comparative Example 3, it was found that if the conductive particle layer was formed only on the second insulating resin layer (N layer) side On the opposite side of the flexible resin layer (N layer), the temporary crimping property is poor. In addition, in Comparative Example 3, when the temporary pressure-bonding temperature was set to 75° C., the anisotropic conductive film was not peeled off from the ITO glass even when the number of temporary pressure-bonding samples was 500, so it was confirmed that Comparative Example 3 was based on Temporary crimping temperature setting is available for practical use.

(3)轉印率 (3) Transfer rate

針對實施例1之各向異性導電膜,分別對形成第1導電粒子層時(第1次)之導電粒子之轉印率及形成第2導電粒子層時(第2次)之導電粒子之轉印率進行測量。 For the anisotropic conductive film of Example 1, the transfer rate of the conductive particles at the time of forming the first conductive particle layer (the first time) and the transfer rate of the conductive particles at the time of forming the second conductive particle layer (the second time) were measured, respectively. Printing rate is measured.

此處,轉印率係轉印至第1絕緣性樹脂層之導電粒子數相對於填充於樹脂模具之導電粒子數的比例。 Here, the transfer rate is the ratio of the number of conductive particles transferred to the first insulating resin layer with respect to the number of conductive particles filled in the resin mold.

轉印率之測量係使用金屬顯微鏡測量位於各向異性導電膜之長度0m、50m、100m、200m、300m之面積1mm2中存在之第1導電粒子層或第2導電粒子層之導電粒子數並算出其平均。再者,第1導電粒子層(第1次)係藉由將導電粒子自各向異性導電膜之0m側向300m側之方向轉印而形成,第2導電 粒子層(第2次)係藉由自各向異性導電膜之300m側向0m側之方向轉印而形成。 The transfer rate was measured by using a metal microscope to measure the number of conductive particles in the first conductive particle layer or the second conductive particle layer located in the area of 1 mm 2 of the lengths 0 m, 50 m, 100 m, 200 m, and 300 m of the anisotropic conductive film. Calculate its average. Furthermore, the first conductive particle layer (first time) was formed by transferring conductive particles in the direction from the 0 m side to the 300 m side of the anisotropic conductive film, and the second conductive particle layer (second time) was formed by It was formed by transfer from the 300m side to the 0m side of the anisotropic conductive film.

其結果為,第1導電粒子層及第2導電粒子層中,自轉印起點至100m,轉印率均超過99.9%,隨著轉印之進展,轉印率降低。然而,第1導電粒子層與第2導電粒子層總共之轉印率於自轉印起點至300m之任一處均超過99.9%。 As a result, in the first conductive particle layer and the second conductive particle layer, the transfer rate exceeded 99.9% from the transfer starting point to 100 m, and the transfer rate decreased as the transfer progressed. However, the transfer rate of the total of the first conductive particle layer and the second conductive particle layer exceeded 99.9% at any point from the transfer starting point to 300 m.

Claims (18)

一種含有填料之膜,其具備樹脂層及填料分散層,上述填料分散層具有:第1填料層,其由以單層分散於該樹脂層之填料所構成;及第2填料層,其由在與第1填料層不同之深度以單層分散於該樹脂層之填料所構成;且第1填料層之填料自該樹脂層之一表面露出、或接近於該一表面,第2填料層之填料自該樹脂層之另一表面露出、或接近於該另一表面,於含有填料之膜之長邊方向,第1填料層之填料之個數密度及第2填料層之填料之個數密度之一者逐漸增加,另一者逐漸減少。 A filler-containing film comprising a resin layer and a filler-dispersed layer, the filler-dispersed layer having: a first filler layer composed of a filler dispersed in the resin layer in a single layer; and a second filler layer consisting of The depth different from that of the first filler layer is composed of a single layer of filler dispersed in the resin layer; and the filler of the first filler layer is exposed from a surface of the resin layer, or is close to the surface, and the filler of the second filler layer is Exposed from the other surface of the resin layer, or close to the other surface, in the longitudinal direction of the film containing the filler, the number density of the filler in the first filler layer and the number density of the filler in the second filler layer are calculated. One gradually increases and the other gradually decreases. 如申請專利範圍第1項之含有填料之膜,其中,樹脂層之層厚(La)與填料之平均粒徑D之比(La/D)為0.6~10。 The filler-containing film of claim 1, wherein the ratio (La/D) of the layer thickness (La) of the resin layer to the average particle size D of the filler (La/D) is 0.6-10. 如申請專利範圍第1項之含有填料之膜,其形成有第1填料層之填料彼此或第2填料層之填料彼此接觸或接近而成之填料單元,填料單元彼此不接觸,且填料單元規則排列。 For the film containing fillers in the claim 1 of the scope of application, there are formed filler units in which the fillers of the first filler layer or the fillers of the second filler layer are in contact or close to each other, the filler units are not in contact with each other, and the filler units are regular arrangement. 如申請專利範圍第1項之含有填料之膜,其形成有第1填料層之填料與第2填料層之填料接觸或接近而成之填料單元,填料單元彼此不接觸,且填料單元規則排列。 The filler-containing film as claimed in claim 1 of the scope of claim 1 is formed with filler units in which the filler of the first filler layer is in contact with or close to the filler of the second filler layer, the filler units are not in contact with each other, and the filler units are regularly arranged. 如申請專利範圍第3項之含有填料之膜,其中,於俯視下,第1填料層之填料單元之長邊方向與第2填料層之填料單元之長邊方向不平行。 The filler-containing film of claim 3, wherein, when viewed from above, the longitudinal direction of the filler unit of the first filler layer is not parallel to the longitudinal direction of the filler unit of the second filler layer. 如申請專利範圍第1項之含有填料之膜,其中,填料分散層與第2樹脂層積層,且第2樹脂層之最低熔融黏度低於形成填料分散層之樹脂層。 The filler-containing film of claim 1, wherein the filler-dispersed layer and the second resin layer are laminated, and the second resin layer has a lower minimum melt viscosity than the resin layer forming the filler-dispersed layer. 如申請專利範圍第1項之含有填料之膜,其進而積層有第3樹脂層。 As in the filler-containing film of claim 1, a third resin layer is further laminated. 如申請專利範圍第1項之含有填料之膜,其可併用2種以上之填料。 For the film containing fillers as claimed in claim 1 of the patent scope, two or more fillers may be used in combination. 如申請專利範圍第1項之含有填料之膜,其中,填料附近之樹脂層之表面相對於鄰接之填料間之中央部上之樹脂層之切平面具有傾斜或者起 伏,該傾斜中,填料之周圍之樹脂層之表面相對於上述切平面缺損,該起伏中,填料正上方之樹脂層之樹脂量少於該填料正上方之樹脂層之表面位於上述切平面時。 The filler-containing film of claim 1, wherein the surface of the resin layer near the filler has an inclination or elevation with respect to the tangent plane of the resin layer on the central portion between adjacent fillers In the inclination, the surface of the resin layer around the filler is defective relative to the above-mentioned tangent plane, and in the undulation, the resin amount of the resin layer directly above the filler is less than when the surface of the resin layer directly above the filler is located on the above-mentioned tangent plane . 如申請專利範圍第1至9項中任一項之含有填料之膜,其中,填料為導電粒子,樹脂層為絕緣性樹脂層,且上述含有填料之膜係用作各向異性導電膜。 The filler-containing film according to any one of Claims 1 to 9, wherein the filler is conductive particles, the resin layer is an insulating resin layer, and the filler-containing film is used as an anisotropic conductive film. 一種含有填料之膜之製造方法,其係申請專利範圍第1至9項中任一項之含有填料之膜之製造方法,且係:使填料以特定之分散狀態保持於樹脂層之一表面,並將該填料壓入至樹脂層,亦使其他填料以特定之分散狀態保持於樹脂層之另一表面,並將該填料壓入至樹脂層。 A method for producing a film containing a filler, which is the method for producing a film containing a filler according to any one of items 1 to 9 of the patent application scope, and is: keeping the filler on a surface of a resin layer in a specific dispersed state, The filler is pressed into the resin layer, and other fillers are kept on the other surface of the resin layer in a specific dispersed state, and the filler is pressed into the resin layer. 一種含有填料之膜之製造方法,其係申請專利範圍第1至9項中任一項之含有填料之膜之製造方法,上述含有填料之膜中,填料為導電粒子,樹脂層為絕緣性樹脂層,且上述含有填料之膜係用作各向異性導電膜,上述製造方法係:使填料以特定之分散狀態保持於樹脂層之一表面,並將該填料壓入至樹脂層,亦使其他填料以特定之分散狀態保持於樹脂層之另一表面,並將該填料壓入至樹脂層。 A method for producing a film containing a filler, which is the method for producing a film containing a filler according to any one of items 1 to 9 of the scope of the patent application, wherein in the film containing a filler, the filler is conductive particles, and the resin layer is an insulating resin layer, and the above-mentioned film containing the filler is used as an anisotropic conductive film, and the above-mentioned production method is: keeping the filler on one surface of the resin layer in a specific dispersed state, and pressing the filler into the resin layer, and also making other The filler is held on the other surface of the resin layer in a specific dispersed state, and the filler is pressed into the resin layer. 如申請專利範圍第11或12項之含有填料之膜之製造方法,其中,於在樹脂層之兩面以特定之分散狀態保持填料時,使在樹脂層之一表面中保持填料之方向與在另一表面中保持填料之方向反轉。 The method for producing a film containing a filler as claimed in claim 11 or 12 of the claimed scope, wherein when the filler is held in a specific dispersed state on both sides of the resin layer, the direction in which the filler is held in one surface of the resin layer is different from the direction in which the filler is held in the other surface. The direction of retaining the filler material is reversed in one surface. 一種膜貼合體,其將申請專利範圍第1至10項中任一項之含有填料之膜貼合於物品。 A film adhered body, which adheres the filler-containing film according to any one of claims 1 to 10 of the patent application scope to an article. 一種連接構造體,其經由申請專利範圍第1至10項中任一項之含 有填料之膜將第1物品與第2物品連接。 A connecting structure, which is contained in any one of items 1 to 10 of the scope of application for a patent The filled membrane connects the first article to the second article. 如申請專利範圍第15項之連接構造體,其經由申請專利範圍第10項之含有填料之膜將第1電子零件與第2電子零件進行各向異性導電連接。 According to the connecting structure of claim 15, the first electronic part and the second electronic part are anisotropically conductively connected through the film containing the filler of claim 10. 一種連接構造體之製造方法,其係經由申請專利範圍第1至10項中任一項之含有填料之膜將第1物品與第2物品壓接。 A method for manufacturing a connecting structure, which comprises crimping a first article and a second article through the film containing the filler according to any one of the claims 1 to 10 of the application scope. 如申請專利範圍第17項之連接構造體之製造方法,其將第1物品、第2物品分別設為第1電子零件、第2電子零件,藉由經由申請專利範圍第10項之含有填料之膜將第1電子零件與第2電子零件進行熱壓接合而製造第1電子零件與第2電子零件各向異性導電連接而成之連接構造體。 For the manufacturing method of the connecting structure of the claim 17, the first article and the second article are set as the first electronic component and the second electronic component, respectively, by using the filler-containing method according to the claim 10 of the claim. The film produces a connection structure in which the first electronic component and the second electronic component are anisotropically conductively connected by thermocompression bonding of the first electronic component and the second electronic component.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307625A (en) * 1998-06-30 2001-08-08 美国3M公司 Fine pitch anisotropic conductive adhesive
TW201611446A (en) * 2014-03-31 2016-03-16 Dexerials Corp Anisotropic conductive film and production method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124435A (en) * 1994-10-25 1996-05-17 Hitachi Chem Co Ltd Manufacture of anisotropic conductive film
US20070175579A1 (en) * 2003-12-04 2007-08-02 Asahi Kasei Emd Corporation Anisotropic conductive adhesive sheet and connecting structure
JP4880533B2 (en) * 2007-07-03 2012-02-22 ソニーケミカル&インフォメーションデバイス株式会社 Anisotropic conductive film, method for producing the same, and joined body
US20120037399A1 (en) * 2010-08-16 2012-02-16 Core Precision Material Corporation Anisotropic conductive film and method of fabricating the same
JP2012139846A (en) * 2010-12-28 2012-07-26 Nippon Synthetic Chem Ind Co Ltd:The Laminate for transfer printing
JP6237288B2 (en) * 2014-02-04 2017-11-29 デクセリアルズ株式会社 Anisotropic conductive film and manufacturing method thereof
WO2015141830A1 (en) * 2014-03-20 2015-09-24 デクセリアルズ株式会社 Anisotropic conductive film and manufacturing method thereof
JP6476747B2 (en) * 2014-10-28 2019-03-06 デクセリアルズ株式会社 Anisotropic conductive film and connection structure
US11685137B2 (en) * 2015-10-07 2023-06-27 Dexerials Corporation Anisotropic conductive film and connection structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307625A (en) * 1998-06-30 2001-08-08 美国3M公司 Fine pitch anisotropic conductive adhesive
TW201611446A (en) * 2014-03-31 2016-03-16 Dexerials Corp Anisotropic conductive film and production method therefor

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