TWI745903B - Self-shielding parts for radioisotope manufacturing equipment - Google Patents
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- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computed tomography [CT]
- A61B6/037—Emission tomography
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- A—HUMAN NECESSITIES
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- A61B6/10—Safety means specially adapted therefor
- A61B6/107—Protection against radiation, e.g. shielding
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- G—PHYSICS
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- G21G1/00—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes
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- G21G4/06—Radioactive sources other than neutron sources characterised by constructional features
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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Abstract
[課題] 目的為提供一種能夠減輕重量的RI製造裝置用自屏蔽件。 [解決手段] 自屏蔽件(6)中,第1層(21)遮蔽一次伽瑪射線(L1),第2層(22)遮蔽中子(L2),且比第2層(22)更靠外周圍側的第3層(23)遮蔽捕獲伽瑪射線(L3)。在此,第2層(22)配置於第1層(21)的外周圍側,因此第1層(21)配置於比第2層(22)更靠近標靶(T)之位置。藉由這種配置能夠減小伽瑪射線遮蔽材料的體積。因此,能夠減輕第1層(21)的重量。又,中子(L2)穿過第1層(21),因此可獲得中子(L2)的減速效果,從而第2層(22)能夠更有效地遮蔽中子(L2)。因此,能夠將第2層(22)設為比比較例更薄,從而能夠減輕重量。[Question] The objective is to provide a self-shielding material for RI manufacturing equipment that can reduce weight. [Solution] In the self-shielding component (6), the first layer (21) shields primary gamma rays (L1), and the second layer (22) shields neutrons (L2), and is closer to the second layer (22) The third layer (23) on the outer peripheral side shields and captures gamma rays (L3). Here, the second layer (22) is arranged on the outer peripheral side of the first layer (21), so the first layer (21) is arranged closer to the target (T) than the second layer (22). With this configuration, the volume of the gamma ray shielding material can be reduced. Therefore, the weight of the first layer (21) can be reduced. In addition, the neutrons (L2) pass through the first layer (21), so the deceleration effect of the neutrons (L2) can be obtained, so that the second layer (22) can more effectively shield the neutrons (L2). Therefore, the second layer (22) can be made thinner than the comparative example, and the weight can be reduced.
Description
本發明有關一種RI(放射性同位素)製造用自屏蔽件。The present invention relates to a self-shielding member for RI (radioisotope) manufacturing.
作為腦或心臟、癌症等精密檢查中之檢查方法,有正電子發射斷層攝影法(PET:Positron Emission Tomography(正電子發射斷層掃描))。該PET檢查中,將由射出正電子(正子)之放射性同位素(正子射出核種)標記之檢查用藥劑藉由注射或吸入等導入至受驗者的體內。被導入至體內之檢查用藥劑被代謝或蓄積於特定的部位(例如,腫瘤或病灶位置)中。從放射性同位素射出之正子與周圍的電子結合而消失時會射出放射線(消失伽瑪射線),因此藉由檢測該放射線並由電腦進行處理,變得能夠獲得特定截面中之斷層攝影圖像。As an examination method in precise examinations of the brain, heart, cancer, etc., there is positron emission tomography (PET: Positron Emission Tomography). In this PET test, an inspection agent labeled with a radioisotope (positron ejection nucleus) that emits positrons (positrons) is introduced into the subject's body by injection or inhalation. The inspection agent introduced into the body is metabolized or accumulated in a specific site (for example, tumor or lesion location). When the positron emitted from the radioisotope combines with the surrounding electrons and disappears, it emits radiation (vanishing gamma rays). Therefore, by detecting the radiation and processing it by a computer, it becomes possible to obtain a tomographic image in a specific section.
作為用於製造這種放射性同位素(RI)之裝置,例如已知有專利文獻1的裝置。該裝置中,在自屏蔽件的內部配置有粒子加速器,並將來自該粒子加速器的帶電粒子束照射於標靶上來製造放射性同位素。
[先前技術文獻]
[專利文獻]As an apparatus for manufacturing such a radioisotope (RI), for example, the apparatus of
[專利文獻1] 日本特開2000-105293號專利公報[Patent Document 1] Japanese Patent Application Publication No. 2000-105293
[發明欲解決之課題][The problem to be solved by the invention]
在此,如上述的RI製造裝置用自屏蔽件具有用於遮蔽中子或伽瑪射線等的複數個層。作為用於進行這種遮蔽的材料,有時使用比重大之材料。因此,存在自屏蔽件的重量變重之類的問題。自屏蔽件設置於建築物的地面上,因此從地面的耐荷重的觀點等而言,要求減輕自屏蔽件的重量。Here, the self-shielding material for the RI manufacturing apparatus as described above has a plurality of layers for shielding neutrons, gamma rays, and the like. As a material used for this kind of masking, a material with a high specific gravity is sometimes used. Therefore, there is a problem that the weight of the self-shielding member becomes heavier. Since the self-shielding material is installed on the ground of the building, it is required to reduce the weight of the self-shielding material from the viewpoint of the load resistance of the ground and the like.
因此,本申請發明的目的為提供一種能夠減輕重量的RI製造裝置用自屏蔽件。 [解決課題之手段]Therefore, the object of the present invention is to provide a self-shielding member for an RI manufacturing device that can reduce weight. [Means to solve the problem]
本發明的RI製造裝置用自屏蔽件,係在內部配置有加速器及RI製造裝置,且在該內部藉由將來自加速器的帶電粒子束照射於標靶上來完成放射性同位素的製造;其特徵為具備:第1層,其係藉由遮蔽伽瑪射線之第1伽瑪射線遮蔽材料來形成;第2層,其係配置於比第1層更靠外周圍側的位置,並藉由比第1層的伽瑪射線遮蔽材料具有更高之中子遮蔽性且比重比第1層的伽瑪射線遮蔽材料小之中子遮蔽材料來形成;以及第3層,其係配置於比第2層更靠外周圍側的位置,並藉由比第2層的中子遮蔽材料具有更高之伽瑪射線遮蔽性之第2伽瑪射線遮蔽材料來形成。The self-shielding member for the RI manufacturing device of the present invention is equipped with an accelerator and an RI manufacturing device inside, and the charged particle beam from the accelerator is irradiated on the target to complete the manufacture of radioisotopes; it is characterized by :The first layer is formed by the first gamma-ray shielding material that shields gamma rays; the second layer is arranged on the outer peripheral side than the first layer, and is more than the first layer The gamma ray shielding material has higher neutron shielding properties and has a smaller specific gravity than the first layer of gamma ray shielding material. The third layer is formed by the neutron shielding material; and the third layer is arranged closer to the second layer. The position on the outer peripheral side is formed by a second gamma ray shielding material that has higher gamma ray shielding properties than the second layer of neutron shielding material.
該RI製造裝置用自屏蔽件中,第1層遮蔽一次伽瑪射線,第2層遮蔽中子,且比第2層更靠外周圍側的第3層遮蔽捕獲伽瑪射線。具體而言,第2層配置於第1層的外周圍側,因此第1層配置於比第2層更靠近標靶之位置。這種配置中,與如第1層配置於比第2層更靠外周側的位置之結構相比,藉由將第1層的厚度設為相同,能夠獲得等同的伽瑪射線遮蔽性能的同時,能夠減小伽瑪射線遮蔽材料的體積。因此,能夠減輕第1層的重量。又,中子穿過第1層,因此可獲得中子的減速效果,從而第2層能夠更有效地遮蔽中子。因此,能夠將第2層設為更薄,並能夠減輕重量。另一方面,捕獲伽瑪射線不穿過第1層,因此第3層應遮蔽之捕獲伽瑪射線增加,但是捕獲伽瑪射線在放射線整體中所佔比例低,因此對於重量增加沒有顯著的影響。藉由以上,能夠減輕自屏蔽件的重量。In this self-shielding material for the RI manufacturing device, the first layer shields primary gamma rays, the second layer shields neutrons, and the third layer on the outer peripheral side than the second layer shields and captures gamma rays. Specifically, the second layer is arranged on the outer peripheral side of the first layer, and therefore the first layer is arranged closer to the target than the second layer. In this configuration, compared to the structure where the first layer is arranged on the outer peripheral side than the second layer, by setting the thickness of the first layer to be the same, it is possible to obtain equivalent gamma ray shielding performance at the same time. , Can reduce the volume of gamma ray shielding material. Therefore, the weight of the first layer can be reduced. In addition, neutrons pass through the first layer, so the deceleration effect of neutrons can be obtained, and the second layer can more effectively shield neutrons. Therefore, the second layer can be made thinner and the weight can be reduced. On the other hand, the captured gamma rays do not pass through the first layer, so the captured gamma rays that should be shielded by the third layer increase, but the captured gamma rays account for a low proportion of the total radiation, so there is no significant effect on the weight increase . With the above, the weight of the self-shielding member can be reduced.
第3層的第2伽瑪射線遮蔽材料的比重可以比第1層的第1伽瑪射線遮蔽材料小。藉此,在自屏蔽件內,能夠減少比重大之材料的量。The specific gravity of the second gamma ray shielding material of the third layer may be smaller than that of the first gamma ray shielding material of the first layer. As a result, the amount of material with a large specific gravity can be reduced in the self-shielding member.
第1層可以配置於自屏蔽件中的最內周圍側。藉此,能夠減小第1層的伽瑪射線遮蔽材料的體積。 [發明效果]The first layer may be arranged on the innermost peripheral side of the self-shielding member. Thereby, the volume of the gamma ray shielding material of the first layer can be reduced. [Effects of the invention]
依據本發明,能夠提供一種能夠減輕重量的RI製造裝置用自屏蔽件。According to the present invention, it is possible to provide a self-shielding member for an RI manufacturing device that can reduce weight.
以下,參閱圖式的同時對本發明所涉及之自屏蔽件的實施方式進行詳細的說明。又,在說明中,有時使用「上」及「下」的術語,其對應於圖式的上方向及下方向。Hereinafter, the embodiments of the self-shielding member according to the present invention will be described in detail while referring to the drawings. Moreover, in the description, the terms "upper" and "lower" are sometimes used, which correspond to the upper direction and the lower direction of the drawing.
圖1為RI製造系統1的剖視圖。RI製造系統1具備標靶裝置10(RI製造裝置)。RI製造系統1製造放射性同位素(RI)。RI製造系統1例如能夠用作PET用迴旋加速器,且藉由RI製造系統1製造之RI例如用於作為放射性同位素標記化合物(RI化合物)的放射性藥劑(包括放射性醫藥品)的製造中。作為醫院等的PET檢查(正子發射斷層攝影檢查)中所使用之放射性同位素標記化合物,有18
F-FLT(fluorothymidine,氟胸苷)、18
F-FMISO(F-fluoromisonidazole,標示氟硝基咪唑)及11
C-雷氯必利(raclopride)等。FIG. 1 is a cross-sectional view of the RI
RI製造系統1為所謂之自屏蔽型粒子加速器系統,該RI製造系統具備使帶電粒子加速之加速器2及作為用於包圍該加速器2來遮蔽放射線的放射線屏蔽件(壁體)之自屏蔽件6。在形成為被自屏蔽件6包圍之內部空間S內,除了加速器2以外,還配置有用於製造RI之標靶裝置10及用於使加速器2的內部成為真空之真空泵4等。進而,在內部空間S內,配置有運行加速器2時所需的附屬品及用於冷却標靶裝置10之附屬機器等。The RI
加速器2為所謂之立式迴旋加速器,該加速器2具有一對磁極、真空箱、包圍這些一對磁極及真空箱之環狀軛。一對磁極的一部分在真空箱內其上表面彼此隔開預定間隔而相對。在該種一對磁極的間隙內,氫離子等帶電粒子被多重加速。真空泵4用於維持加速器2內的真空環境,例如被固定於加速器2的側部。加速器2沿照射方向射出帶電粒子束B。The
標靶裝置10用於接收從加速器2照射之帶電粒子束B來製造RI,在內部形成有收納原料(例如,標靶水;18
O水)之收納部。如圖1及圖2所示,標靶裝置10通常被固定於加速器2的側部。本實施方式的RI製造系統1具備隔著加速器2配置於兩側之2個標靶裝置10。例如,配置於圖示左側之標靶裝置10被配置於上層側,且配置於圖示右側之標靶裝置10被配置於下層側(參閱圖2)。標靶裝置10被設置於加速器2上之標靶屏蔽件7覆蓋。The
自屏蔽件6藉由複數個構件構成,且形成為覆蓋加速器2及標靶裝置10。自屏蔽件6在內部配置有加速器2及標靶裝置10,且在其內部藉由將來自加速器2的帶電粒子束B照射於標靶上來完成RI的製造之結構物。自屏蔽件6為用於遮蔽製造該RI時產生之放射線來防止向自屏蔽件6的外部洩漏之結構物。The self-
如圖2所示,整體被自屏蔽件6遮蔽之RI製造系統1配置於建築物100的RI製造室101中。RI製造系統1設置於RI製造室101的地面102上。As shown in FIG. 2, the RI
如圖1所示,自屏蔽件6具備在帶電粒子束B的照射方向上相互對向之側壁部11、12及在水平方向上與帶電粒子束B的照射方向正交之方向上相互對向之側壁部13、14。側壁部11與側壁部12相互分離地配置,且側壁部13與側壁部14相互分離地配置。側壁部13、14的一側端部與側壁部11的兩個端部連接,且側壁部13、14的另一側端部與側壁部12的兩個端部連接。藉此,自屏蔽件6的內部空間S的四周被側壁部11、12、13、14無間隙地包圍。As shown in FIG. 1, the self-
如圖2所示,自屏蔽件6的上端部被上壁部15封閉。亦即,在側壁部11、12、13、14的上端部連接有上壁部15。側壁部11、12、13、14的下端部設置於RI製造室101的地面102上。藉此,藉由上壁部15及地面102在上下方向上將側壁部11、12、13、14包圍之內部空間S無間隙地塞住。As shown in FIG. 2, the upper end portion of the self-shielding
藉由以上,自屏蔽件6的側壁部11、12、13、14配置於配置有自屏蔽件6之RI製造室101的側壁部103的內側,且配置於比該側壁部103更靠近標靶裝置10的位置。又,自屏蔽件6的上壁部15配置於配置有自屏蔽件6之RI製造室101的上壁部104的內側,且配置於比該上壁部104更靠近標靶裝置10的位置。再者,側壁部11、12、13、14直接設置於地面102上,但是可以設置有連結側壁部11、12、13、14的下端部彼此之下壁部,而該下壁部配置於地面102上。With the above, the
再者,自屏蔽件6具有能夠沿帶電粒子束B的照射方向和與水平方向正交之方向分割的結構(參閱圖1)。亦即,側壁部11、12及上壁部15在中央位置附近被分割成能夠裝卸。藉此,自屏蔽件6被分割成第1結構體6A與第2結構體6B。其中,第2結構體6B沿設置於地面102上之引導部(未圖示)相對於第1結構體6A往復移動。藉此,自屏蔽件6成為能夠開閉的結構。第1結構體6A與第2結構體6B之間無間隙地連接,以防止放射線洩漏。Furthermore, the self-shielding
接著,一邊參閱圖3一邊對自屏蔽件6的層結構進行更加詳細的說明。圖3(a)為表示本實施方式所涉及之自屏蔽件6的層結構之概略剖視圖。圖3(b)為表示比較例所涉及之自屏蔽件56的層結構之概略剖視圖。再者,圖3(a)中僅示出側壁部12、13、14的層結構,但是未圖示之其他壁部亦具有相同原理的層結構。Next, referring to FIG. 3, the layer structure of the self-shielding
如圖3(a)所示,自屏蔽件6從內周圍側朝向外周圍側依次,亦即從自屏蔽件6的內部空間S朝向自屏蔽件6的外部依次具備第1層21、第2層22及第3層23。As shown in FIG. 3(a), the
第1層21為藉由遮蔽伽瑪射線之第1伽瑪射線遮蔽材料形成之層。第1層21配置於自屏蔽件6中的最內周圍側。其中,「配置於最內周圍側」是指,作為具有遮蔽放射線之功能之層而配置於最內周圍側,且表示在比第1層21更靠內周圍側的位置未形成其他如第1~第3層那樣的遮蔽伽瑪射線或中子之層之狀態。因此,即使在藉由使用塗料塗布第1層21的內周圍面來形成之塗裝層或被不具有放射線的遮蔽功能之保護材料覆蓋之情況下,第1層21亦成為配置於自屏蔽件6中的最內周圍側的層。The
第1層21為主要遮蔽來自標靶裝置10的放射線中的一次伽瑪射線L1之層。作為形成第1層21之第1伽瑪射線遮蔽材料,可以採用由鉛構成之金屬材料。由鉛構成之金屬材料還具有使中子L2減速之功能。再者,考慮一次伽瑪射線L1的遮蔽性或中子L2的減速效果,作為第1伽瑪射線遮蔽材料,可以採用由鐵構成之金屬材料及由鎢構成之金屬材料等。再者,由具有伽瑪射線的遮蔽性之特定的金屬成分(鉛、鐵、鎢等)構成之金屬材料是指,並不是含有少量的該金屬成分即可,而是需要以能夠發揮遮蔽一次伽瑪射線L1之功能之程度的含有率包含該金屬成分。又,可以不含有100%的特定的金屬成分,亦可以在不影響遮蔽性之範圍內含有其他成分。亦即,以預定的含有率包含特定的金屬成分即可。再者,在具有複數種具有前述的一次伽瑪射線L1的遮蔽性之金屬成分之情況下,該複數種金屬成分的總含有率滿足預定值即可。The
第2層22為主要遮蔽穿過了第1層21之放射線中的中子L2之層。第2層22配置於比第1層21更靠外周圍側的位置。在此,第2層22與第1層21在外周圍側相鄰地配置。第2層22藉由比第1層21具有更高之中子遮蔽性且比重比第1層21的第1伽瑪射線遮蔽材料小之中子遮蔽材料來形成。再者,「中子遮蔽性高」是指,在以相同厚度比較第1層21的第1伽瑪射線遮蔽材料與第2層22的中子遮蔽材料時,第2層22的中子遮蔽材料能夠遮蔽更多的中子。作為這種中子遮蔽材料,可以採用由聚乙烯構成之樹脂材料等。另外,可以採用由石蠟等構成之樹脂材料。再者,由特定的樹脂成分(聚乙烯、石蠟等)構成之樹脂材料是指,並不是含有少量的該樹脂成分即可,而是需要以能夠發揮遮蔽中子之功能之程度的含有率包含該樹脂成分。又,可以不含有100%的特定的樹脂成分,亦可以在不影響遮蔽性之範圍內含有其他成分。亦即,以預定的含有率包含特定的樹脂成分即可。再者,在具有複數種具有前述中子L2的遮蔽性之樹脂成分之情況下,該複數種樹脂成分的總含有率滿足預定值即可。The
第3層23為主要遮蔽第2層22遮蔽了中子L2時產生之捕獲伽瑪射線L3之層。第3層23配置於比第2層22更靠外周圍側的位置。在此,第3層23與第2層22在外周圍側相鄰地配置。第3層23的第2伽瑪射線遮蔽材料比第2層22的中子遮蔽材料具有更高之伽瑪射線遮蔽性。又,第3層23的第2伽瑪射線遮蔽材料的比重比第1層21的伽瑪射線遮蔽材料小。再者,「伽瑪射線遮蔽性高」是指,在以相同厚度比較第2層22的中子遮蔽材料與第3層23的第2伽瑪射線遮蔽材料時,第3層23的第2伽瑪射線遮蔽材料能夠遮蔽更多的伽瑪射線。作為這種第2伽瑪射線遮蔽材料,可以採用重混凝土。The
第1層21的厚度比第2層22的厚度及第3層23的厚度薄。例如,第1層21的厚度被設定成比第2層22的厚度及第3層23的厚度僅薄預定的比例之厚度即可。The thickness of the
接著,對本實施方式所涉及之自屏蔽件6的作用/效果進行說明。Next, the function/effect of the self-
首先,參閱圖3(b)對比較例所涉及之自屏蔽件56的層結構進行說明。如圖3(b)所示,自屏蔽件56從內周圍側依次具備第2層22、第1層21及第3層23。此時,來自標靶裝置10的中子L2被第2層22遮蔽。此時,第2層22中,在遮蔽了中子L2時,產生捕獲伽瑪射線L3。相對於此,第1層21遮蔽一次伽瑪射線L1及捕獲伽瑪射線L3。但是,無法由第1層21完全遮蔽之放射線(伽瑪射線L1、L3及中子L2)洩漏,因此最外周圍側的第3層23遮蔽該些放射線。First, referring to FIG. 3(b), the layer structure of the self-shielding
相對於此,圖3(a)所示之本實施方式所涉及之自屏蔽件6中,第1層21遮蔽一次伽瑪射線L1,第2層22遮蔽中子L2,且比第2層22更靠外周圍側的第3層23遮蔽捕獲伽瑪射線L3。在此,第2層22配置於第1層21的外周圍側,因此第1層21配置於比第2層22更靠近標靶T之位置。這種配置中,與圖3(b)所示之比較例所涉及之結構相比,藉由將第1層21的厚度設為與比較例相同,能夠獲得等同的伽瑪射線遮蔽性能的同時,能夠減小伽瑪射線遮蔽材料的體積。因此,能夠減輕第1層21的重量。又,中子L2穿過第1層21,因此可獲得中子L2的減速效果,從而第2層22能夠更有效地遮蔽中子L2。因此,能夠將第2層22設為比比較例更薄,從而能夠減輕重量。另一方面,捕獲伽瑪射線L3不穿過第1層21,因此第3層23應遮蔽之捕獲伽瑪射線L3增加,但是捕獲伽瑪射線L3在放射線整體中所佔比例低,因此對於重量增加沒有顯著的影響。藉由以上,能夠減輕自屏蔽件6的重量。In contrast, in the self-shielding
例如,在作為第1層21的材料採用鉛之情況下,比重大至11.3g/cm3
,因此在自屏蔽件6的重量整體中第1層所佔的比例大。因此,藉由減小第1層21的體積,能夠減輕自屏蔽件6的重量。藉由以上述方式減輕自屏蔽件6的重量,能夠使建築物100的地面102具有充足的耐荷重,並且亦能夠使設置時之搬送作業等變得容易。又,鉛的重量單價昂貴,因此藉由減小鉛的體積,能夠降低自屏蔽件6整體的材料成本。For example, when lead is used as the material of the
第3層23的第2伽瑪射線遮蔽材料的比重比第1層21的第1伽瑪射線遮蔽材料小。藉此,在自屏蔽件6內,能夠減少比重大之材料的量。The specific gravity of the second gamma ray shielding material of the
第1層21配置於自屏蔽件6中的最內周圍側。藉此,能夠減小第1層21的伽瑪射線遮蔽材料的體積。The
以上,對本發明的一實施方式進行了說明,但是本發明並不限於上述實施方式,亦可以在不變更各申請專利範圍中所記載之技術思想之範圍內進行變形。As mentioned above, an embodiment of the present invention has been described, but the present invention is not limited to the above-mentioned embodiment, and may be modified without changing the technical idea described in the scope of each patent application.
例如,上述實施方式中,第3層23由比重比第1層21小之材料形成。取而代之,作為第3層23,可以採用與第1層21相同的伽瑪射線遮蔽材料。For example, in the above-mentioned embodiment, the
上述實施方式中,各層之間直接相互接合,但是亦可以插入不具有對放射線之遮蔽性之構件。In the above embodiment, the layers are directly joined to each other, but a member that does not have radiation shielding properties may be inserted.
2:加速器
6:自屏蔽件
10:標靶裝置(RI製造裝置)
21:第1層
22:第2層
23:第3層2: accelerator
6: Self-shielding
10: Target device (RI manufacturing device)
21:
[圖1]為具有本發明的實施方式所涉及之自屏蔽件之RI製造系統的沿水平面之剖視圖。 [圖2]為圖1的RI製造系統的沿垂直面之剖視圖。 [圖3](a)為表示本發明的實施方式所涉及之自屏蔽件的層結構之剖視圖,(b)為表示比較例所涉及之自屏蔽件的層結構之剖視圖。[Fig. 1] is a cross-sectional view along a horizontal plane of an RI manufacturing system having a self-shielding member according to an embodiment of the present invention. [Fig. 2] is a vertical cross-sectional view of the RI manufacturing system in Fig. 1. [Fig. [FIG. 3] (a) is a cross-sectional view showing the layer structure of the self-shielding material according to the embodiment of the present invention, and (b) is a cross-sectional view showing the layer structure of the self-shielding material according to the comparative example.
6:自屏蔽件 6: Self-shielding
10:標靶裝置 10: Target device
12:側壁部 12: Side wall
13:側壁部 13: side wall
14:側壁部 14: side wall
21:第1層
21:
22:第2層
22:
23:第3層 23: layer 3
56:自屏蔽件 56: Self-shielding
L1:一次伽瑪射線 L1: One gamma ray
L2:中子 L2: Neutron
L3:捕獲伽瑪射線 L3: Capture gamma rays
S:內部空間 S: Internal space
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