TWI743891B - 發光二極體封裝結構及其製作方法與顯示裝置 - Google Patents
發光二極體封裝結構及其製作方法與顯示裝置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 214
- 239000000843 powder Substances 0.000 claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 15
- 238000001228 spectrum Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000009849 vacuum degassing Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000000411 transmission spectrum Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000011575 calcium Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
- G02B6/0055—Reflecting element, sheet or layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
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- H01L33/52—Encapsulations
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48105—Connecting bonding areas at different heights
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Abstract
本發明提供一種發光二極體封裝結構及其製作方法與顯示裝置。發光二極體封裝結構包括藍光發光二極體以及螢光粉層。螢光粉層設置於藍光發光二極體上,且包括綠色螢光粉、紅色螢光粉以及黃色螢光粉,其中在綠色螢光粉、紅色螢光粉與黃色螢光粉的總重量百分比為100%時,黃色螢光粉的重量百分比為1%~10%。
Description
本發明有關一種發光二極體封裝結構及其製作方法與顯示裝置,特別是具有廣色域與能夠降低危險藍光的顯示裝置與位於其中的發光二極體封裝結構及其製作方法。
隨著顯示裝置的普及性越來越高,顯示裝置的性能表現越發重要,例如消費者對於節能、護眼與廣色域等要求越來越重視。目前主流的顯示裝置中的護眼功能並非透過本身硬體設計的方式達到,而只是透過軟體演算法的方式降低危險藍光的比例,然而實際上使用者依然會受到低波長與高能量的藍光的傷害。雖然目前有些顯示裝置在硬體設計上能夠降低危險藍光,但卻無法達到廣色域與節能環保(例如:美國能源之星(ENERGY STAR
®))的規格。
根據本發明(揭露)的一實施例,提供一種發光二極體封裝結構,其包括藍光發光二極體以及螢光粉層。藍光發光二極體用於產生第一光線,且螢光粉層設置於藍光發光二極體上。螢光粉層包括綠色螢光粉、紅色螢光粉以及黃色螢光粉,其中在綠色螢光粉、紅色螢光粉與黃色螢光粉的總重量百分比為100%時,黃色螢光粉的重量百分比為1%~10%。
根據本發明(揭露)的另一實施例,提供一種顯示裝置,其包括顯示面板以及背光模組。背光模組設置於顯示面板的背面,且背光模組包括至少一發光二極體封裝結構。發光二極體封裝結構包括藍光發光二極體以及螢光粉層。藍光發光二極體用於產生第一光線,且螢光粉層設置於藍光發光二極體上。螢光粉層包括綠色螢光粉、紅色螢光粉以及黃色螢光粉,其中在綠色螢光粉、紅色螢光粉與黃色螢光粉的總重量百分比為100%時,黃色螢光粉的重量百分比為1%~10%。
根據本發明(揭露)的又一實施例,提供一種製作發光二極體封裝結構的方法。首先,將藍光發光二極體設置於載板上。然後,按比例將綠色螢光粉、紅色螢光粉以及黃色螢光粉混和在膠水中,以形成螢光粉溶液,其中在綠色螢光粉、紅色螢光粉與黃色螢光粉的總重量百分比為100%時,黃色螢光粉的重量百分比為1%~10%。接著,將螢光粉溶液的至少一部分設置在藍光發光二極體上,隨後固化螢光粉溶液的所述部分,以於藍光發光二極體上形成螢光粉層。
下文結合具體實施例和圖式對本揭露的內容進行詳細描述,且為了使本發明(揭露)的內容更加清楚和易懂,下文各附圖為可能為簡化的示意圖,且其中的元件可能並非按比例繪製。並且,附圖中的各元件的數量與尺寸僅為示意,並非用於限制本揭露的範圍。
請參考第1圖,其繪示本發明(揭露)的一實施例的發光二極體封裝結構的剖視示意圖。本實施例所提供的發光二極體封裝結構10可包括藍光發光二極體102以及螢光粉層104。藍光發光二極體102具有出光面102S,用以產生第一光線L1,且螢光粉層104設置於藍光發光二極體102的出光面102S上,用以吸收部分第一光線L1並將第一光線L1轉換為第二光線L2、第三光線L3以及第四光線L4,第一光線L1、第二光線L2、第三光線L3與第四光線L4分別具有不同顏色,使得第一光線L1、第二光線L2、第三光線L3與第四光線L4可彼此混和出白光,從發光二極體封裝結構10的出光面10S射出。在一些實施例中,藍光發光二極體102的出光面102S可為其上表面及/或側面。藍光發光二極體102可例如為無機半導體的發光二極體晶片或有機發光二極體,但不限於此。雖然第1圖僅顯示單一個藍光發光二極體102,但發光二極體封裝結構10中的藍光發光二極體102的數量不以此為限,也可為多個。第一光線L1可為藍光,舉例來說,第一光線L1的峰值波長範圍可為450奈米(nm)至460奈米,例如為455奈米至457.5奈米或457.5至460奈米,但不限於此。為了使螢光粉層104可被第一光線L1激發而產生第二光線L2、第三光線L3以及第四光線L4,第一光線L1的波長可小於第二光線L2、第三光線L3與第四光線L4的波長,舉例來說,第二光線L2可為綠色、第三光線L3可為紅色、第四光線L4可為黃色。
螢光粉層104可包括綠色螢光粉104g、紅色螢光粉104r以及黃色螢光粉104y,其中綠色螢光粉104g可將第一光線L1轉換為第二光線L2,紅色螢光粉104r可將第一光線L1轉換為第三光線L3,且黃色螢光粉104y可將第一光線L1轉換為第四光線L4。舉例來說,第二光線L2的峰值波長範圍可為530奈米至540奈米,第三光線L3的峰值波長範圍可為630奈米至650奈米,且第四光線L4的峰值波長範圍可為550奈米至570奈米。在此條件下,綠色螢光粉104g的材料可例如包括(Ca,Eu)
m/2Si
12-(m+n)Al
m+nO
nN
16-n或其他合適的材料,紅色螢光粉104r的材料可例如包括CaAlSiN
3:Eu
2+、A
xMF
y:Mn
4+(其中A=鋰(Li)、鈉(Na)、鉀(K)、鈣(Ca)、鍶(Sr)、鋇(Ba)等,M=矽(Si)、鋁(Al)、釔(Y)、鈧(Sc)等)或其他合適的材料,黃色螢光粉的材料可例如包括YAG(Y
3Al
5O
3:Ce
3+)或其他合適的材料,但不以上述為限。螢光粉層104可另包括封膠層104a,用以保護藍光發光二極體102,且綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y分散設置在封膠層104a中。封膠層104a可例如包括液態絕緣封裝材料,例如環氧樹脂(epoxy resin),但不限於此。在一些實施例中,螢光粉層104還可包括多個分散粒子104b,用以將綠色螢光粉104g、紅色螢光粉104r、黃色螢光粉104y均勻分散於封膠層104a中。分散粒子104b可例如包括有機矽樹脂球型微粉或其他合適的材料。在一些實施例中,分散粒子104b可具有散射光線的功用,因此可提升第一光線L1、第二光線L2、第三光線L3與第四光線L4的混光。
在螢光粉層104中,在綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y的總重量百分比為100%時,綠色螢光粉104g的重量百分比可為35%~80%,紅色螢光粉104r的重量百分比可為15%~55%,且黃色螢光粉104y的重量百分比可為1%~10%。隨著綠色螢光粉104g與紅色螢光粉104r的材料的不同,綠色螢光粉104g與紅色螢光粉104r的重量百分比可具有不同的範圍,例如分別為35%~45%與50%~55%,或70%~80%與15%~20%。上述的重量百分比是基於綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y的總重量而言。需說明的是,透過將綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y的比例設計在上述範圍中,發光二極體封裝結構10可提供具有廣色域以及低藍光危害的白光,並還可符合美國環保署(EPA)所訂定的能源之星8.0版(ENERGY STAR
®version 8.0)的節能需求,具體說明如下文的第5圖至第8圖的描述。
發光二極體封裝結構10還可包括載板106,用以承載藍光發光二極體102以及螢光粉層104。在本實施例中,載板106可例如為封裝支架(lead frame),並包括至少兩導電接墊106a以及封裝體106b,且導電接墊106a可固定於封裝體106b上,並透過封裝體106b彼此電性絕緣。舉例來說,導電接墊106a可在藍光發光二極體102尚未設置在其上時先透過成型製程(molding process)於部分的導電接墊106a上以及導電接墊106a之間形成封裝體106b,使得導電接墊106a可固定封裝體106b上,以作為發光二極體封裝結構10的引腳,進而用於與其他的電路板或元件電連接。在第1圖的實施例中,導電接墊106a與封裝體106b可形成凹槽106c,且導電接墊106a位於凹槽106c的底部,因此設置於導電接墊106a的其中一個上的藍光發光二極體102所產生的第一光線L1可透過凹槽106c聚集並射向出光面10S,以提升藍光發光二極體102的光利用率。螢光粉層104可設置於凹槽106c中,並覆蓋藍光發光二極體102,以使螢光粉層104中的綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y可充分吸收藍光發光二極體102的第一光線L1。導電接墊106a可例如包括銅、銀或其他合適的材料,但不以此為限。封裝體106b可例如包括環氧成型材料(epoxy molding compound, EMC)或其他合適的材料。本發明的發光二極體封裝結構10的封裝方式並不以上述為限。在一些實施例中,載板106可例如為電路板或其他類型的載板,但不以此為限。
在第1圖的實施例中,發光二極體封裝結構10還可包括至少兩導線108,用於分別將藍光發光二極體102的兩電極102e(例如陽極與陰極)電連接到對應的導電接墊106a。導線108的數量不以第1圖所示為限,在一些實施例中,連接於藍光發光二極體102的其中一電極102e與對應的導電接墊106a之間或另一電極102e與對應的導電接墊106a之間的導線108的數量可例如為兩條以上,以提升提供到藍光發光二極體的電流。導線108可例如包括金線或其他合適的材料。在本實施例中,螢光粉層104可覆蓋導線108,以達到保護導線108的效果。在一些實施例中,藍光發光二極體102也可以覆晶方式設置於載板106上並與載板106電連接。
請參考第2圖與第3圖,第2圖繪示本發明(揭露)的一實施例的製作發光二極體封裝結構的方法的流程示意圖,第3圖繪示本發明(揭露)的一實施例的形成螢光粉層的方法示意圖。如第2圖所示,本實施例所提供的製作發光二極體封裝結構的方法可包括步驟S12到步驟S18。下文將搭配第3圖並以第1圖的發光二極體封裝結構10為例進一步描述,但不以此為限。本實施例的製作方法也可適用於其他實施例的發光二極體封裝結構中。首先,從步驟S12開始,將藍光發光二極體102設置於載板106上。舉例來說,藍光發光二極體102可例如利用固晶(die bonding)製程透過固晶膠(圖未示)黏著在載板106上,但不以此為限。在本實施例中,在將藍光發光二極體102設置於載板106上之後,可透過焊線(wire bonding)製程於藍光發光二極體102的電極102e與對應的導電接墊106a之間形成導線108。
然後,進行步驟S14至步驟S18,於藍光發光二極體102上形成螢光粉層104。具體來說,如第2圖與第3圖的部分(I)所示,在步驟S14中,可按比例將綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y混和在膠水110中,以形成螢光粉溶液112,其中所述比例可依照上述綠色螢光粉104g、紅色螢光粉104r與黃色螢光粉104y的重量百分比調製。接著,對混和有綠色螢光粉104g、紅色螢光粉104r、黃色螢光粉104y的膠水110進行攪拌與真空脫泡,以去除膠水110中的空氣,並將綠色螢光粉104g、紅色螢光粉104r、黃色螢光粉104y均勻分散於膠水110中。舉例來說,混和有綠色螢光粉104g、紅色螢光粉104r、黃色螢光粉104y的膠水110還可設置在混和容器114中,並透過例如手動或均質機進行攪拌,然後透過真空脫泡機進行真空脫泡,但不限於此。在本實施例中,進行攪拌的步驟可還包括在膠水110中加入分散粒子104b,用以將綠色螢光粉104g、紅色螢光粉104r、黃色螢光粉104y均勻分散於膠水110中。
接著,如第2圖所示,在步驟S16中,將螢光粉溶液112的至少一部分設置在藍光發光二極體102上。在本實施例中,如第3圖的部分(II)所示,可在進行攪拌與真空脫泡的步驟之後將混和容器114中的螢光粉溶液112的三分之二(例如第3圖的部分(I)所示的螢光粉溶液112靠近上表面112S的三分之二部分)置入或倒入點膠容器118中,然後透過點膠機從點膠容器118將螢光粉溶液112設置於凹槽106c中,進而可設置於藍光發光二極體102上。由於靠近螢光粉溶液底部的螢光粉容易會有沉澱的現象,而靠近螢光粉溶液112上表面112S的部分的螢光粉具有較均勻的混和,因此透過將螢光粉溶液112靠近上表面112S的三分之二部分(例如從螢光粉溶液112的上表面112S至深度為三分之一螢光粉溶液112高度的部分),可降低螢光粉溶液112中混和不均勻的部分(例如螢光粉溶液112靠近底部的三分之一部分)被使用於製成發光二極體封裝結構10,進而減緩不同發光二極體封裝結構10的色點偏差,例如可將對應相同顏色的色點在色度座標上偏差值降低至小於或等於0.009,進而提升所製作出不同的發光二極體封裝結構10的均一性。需說明的是,螢光粉溶液112位於混和容器114中剩餘的三分之一部分還可用於在混和容器114中製備出另一螢光粉溶液。
然後,如第1圖與第2圖所示,在步驟S18中,固化螢光粉溶液112,以於藍光發光二極體102上形成螢光粉層104。固化螢光粉溶液112的方式可例如包括烘乾製程或紫外光固化製程,但不限於此。
本發明的發光二極體封裝結構可進一步應用於顯示裝置中。下文以液晶顯示裝置以及第1圖的發光二極體封裝結構10為例作描述,但不限於此。請參考第4圖,其繪示本發明(揭露)的一實施例的顯示裝置的爆炸示意圖。如第4圖所示,本實施例所提供的顯示裝置20可包括顯示面板202以及背光模組204,且背光模組204設置於顯示面板202的背面。顯示面板202可為任一種需背光源的非自發光顯示面板,例如液晶顯示面板。本實施例的背光模組204可例如為側入式背光模組,且包括多層光學膜片、導光板210、反射片212以及光源模組214,其中光學膜片可例如包括增光片206與擴散片208,且導光板210、擴散片208與增光片206可依序設置在反射片212上。光源模組214可設置於導光板210的一側,使得光源模組214所產生的光線可從導光板210的側面進入。透過導光板210與反射片212,光線可從導光板210面對擴散片208的表面射出,且透過擴散片208與增光片206,可均勻化光線的亮度以及提升光線朝向顯示面板202的亮度。
光源模組214可包括多個發光二極體封裝結構216以及電路板218。發光二極體封裝結構216可沿著電路板218的延伸方向依序排列,使得光源模組214可為條狀,但本發明不以此為限。在一些實施例中,發光二極體封裝結構216的數量不以第4圖所示為限,光源模組214也可例如包括一個發光二極體封裝結構216。在一些實施例中,背光模組204可包括多個光源模組214設置於導光板210的不同側面,以提升背光亮度。由於發光二極體封裝結構216可採用上述實施例的發光二極體封裝結構10,因此在此不多贅述。在一些實施例中,背光模組204可為直下式背光模組,在此情況下,發光二極體封裝結構216可均勻分散設置導光板210與反射片212之間,或當背光模組204可不包括導光板210時設置於擴散片208與反射片212之間。在一些實施例中,背光模組204可包括多個擴散片208,設置於增光片206與導光板210之間。在一些實施例中,背光模組204不限於上述結構,也可依據實際需求調整背光模組204的光學膜片的數量、種類與配置關係。
在一些實施例中,顯示裝置20還可包括中框220、背框222以及覆蓋板224,用以支撐顯示面板202、增光片206、擴散片208、導光板210、反射片212以及光源模組214,且覆蓋板224還可用於降低顯示裝置20的側邊漏光。本發明的支撐結構並不以此為限,也可採用其他合適的設計。
顯示面板202可包括多個像素或子像素(圖未示),用以調整通過光線的灰階值,使得顯示裝置20可顯示出影像。舉例來說,每個像素可包括紅色子像素、綠色子像素與藍色子像素,用以分別允許從發光二極體封裝結構216所產生的白光的對應部分通過,進而分別產生紅光、綠光與藍光,但不限於此。下文將進一步說明顯示裝置20所產生的紅光、綠光與藍光能夠混和出具有廣色域與低藍光的白光。請參考第5圖與第6圖,第5圖繪示本發明(揭露)的一實施例的彩色濾光片的穿透光譜,第6圖繪示一實施例的顯示裝置與對照實例的顯示裝置在操作於最高灰階時(例如在8位元顏色的情況下,紅色子像素、綠色子像素與藍色子像素的灰階值為255時)所產生的白光光譜示意圖。在一實施例中,第4圖中顯示面板202的紅色子像素、綠色子像素與藍色子像素的彩色濾光片的穿透光譜可例如如第5圖所示,但不以此為限。在第5圖中,穿透光譜T1可代表藍色子像素的藍色彩色濾光片的穿透光譜,穿透光譜T2可代表綠色子像素的綠色彩色濾光片的穿透光譜,穿透光譜T3可代表紅色子像素的紅色彩色濾光片的穿透光譜。當顯示裝置以第5圖所示的穿透光譜T1、穿透光譜T2與穿透光譜T3為例時,顯示裝置操作在最高灰階時所產生的白光光譜可如第6圖所示,其中曲線C1代表上述實施例的顯示裝置20操作在最高灰階時所產生的白光光譜,曲線C2則代表對照實例的顯示裝置操作在最高灰階時所產生的白光光譜。相較於上述實施例而言,對照實例的顯示裝置使用僅於螢光粉層中加入綠色螢光粉與紅色螢光粉的發光二極體封裝結構。從第6圖可知,曲線C1從波長為415奈米到455奈米的積分值可小於曲線C2從波長為415奈米到455奈米的積分值,因此曲線C1從波長為415奈米到455奈米的積分值對從波長為400奈米到500奈米的積分值的比例(第一比例)可小於曲線C2從波長為415奈米到455奈米的積分值對從波長為400奈米到500奈米的積分值的比例(第二比例)。由此可知,與使用僅於螢光粉層中加入綠色螢光粉與紅色螢光粉的發光二極體封裝結構作為光源的顯示裝置相比,上述實施例的顯示裝置20的螢光粉層中由於依照一定比例(如上述比例範圍)加入綠色螢光粉、紅色螢光粉與黃色螢光粉,因此可減少從波長為415奈米到455奈米的積分值,進而降低所產生的白光對使用者的藍光危害。舉例來說,曲線C1的第一比例可小於或等於50%,並且隨著顯示面板202的不同,第一比例可例如為45.84%、44.9%、40.1%、35.67%或33.74%,且白光色溫可例如為6650K、6861K、6485K或6335K,但本發明不以此為限。然而,曲線C2的第二比例則為53.45%或55.38%。因此,由於曲線C1的第一比例可小於或等於50%,且同時曲線C1所對應的白光色溫可介於5500K至7000K,因此上述實施例的顯示裝置20可降低藍光危害並符合德國萊茵(TÜV Rheinland
®)的低藍光測試標準。在一些實施例中,當上述實施例的顯示裝置20應用於電腦螢幕時,所產生的白光在CIE 1931的色度座標上的x值範圍可例如為0.283至0.343,y值範圍可例如為0.299至0.359。或者,當上述實施例的顯示裝置20應用於電視時,所產生的白光在CIE 1931的色度座標上的x值範圍可例如為0.25至0.31,y值範圍可例如為0.26至0.32。
請參考第7圖與第8圖,第7圖繪示一實施例的顯示裝置所產生的色域與標準紅綠藍色域(sRGB)在CIE 1931色度座標中的區域示意圖,第8圖繪示一實施例的顯示裝置所產生的色域與DCI-P3色域在CIE 1976色度座標中的區域示意圖。如第7圖所示,顯示裝置20在紅色子像素、綠色子像素與藍色子像素的灰階值為255時的色域在CIE 1931的色度座標上的區域R1對sRGB色域在CIE 1931的色度座標上的區域R2的覆蓋率可為100%,但對照實例的顯示裝置所產生的色域(圖未示)對sRGB色域的覆蓋率僅達96.15%,因此透過依照上述的綠色螢光粉、紅色螢光粉與黃色螢光粉的總重量百分比所製作出的螢光粉層,上述實施例顯示裝置20可明顯提升色域範圍。舉例來說,顯示裝置20在紅色子像素的灰階值為255且綠色子像素與藍色子像素的灰階值為0時所顯示的顏色在CIE 1931的色度座標上的x值範圍可例如為0.6467至0.7067,y值範圍可例如為0.2836至0.3436,在綠色子像素的灰階值為255且紅色子像素與藍色子像素的灰階值為0時所顯示的顏色在CIE 1931的色度座標上的x值範圍可例如為0.2411至0.3011,y值範圍可例如為0.6467至0.7067,且在藍色子像素的灰階值為255且紅色子像素與綠色子像素的灰階值為0時所顯示的顏色在CIE 1931的色度座標上的x值範圍可例如為0.118至0.178,y值範圍可例如為0.0167至0.0767,但不以為限。如第8圖所示,顯示裝置20在紅色子像素、綠色子像素與藍色子像素的灰階值為255時的色域在CIE 1976的色度座標上的區域R3對DCI-P3色域在CIE 1976的色度座標上的區域R4的覆蓋率可大於95%,例如95.87%、96.08%或97.81%,但不限於此。
此外,上述實施例的顯示裝置20在經過能源之星8.0版的測試條件之後依然能符合其標準。舉例來說,當能源之星8.0版的總能源消耗(total energy consumption)標準為每年消耗78.36千瓦‧時(kWh)時,顯示裝置20每年的總能源消耗可為73.32、73.93或72.4千瓦‧時。
綜上所述,在本發明的顯示裝置中,透過選用峰值波長較長的藍光發光二極體並搭配特定比例範圍的綠色、紅色與黃色螢光粉,不僅可在硬體設計上達到低藍光危害,還能夠滿足高色域的需求以及節能環保的規範。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
10,216:發光二極體封裝結構
10S,102S:出光面
102:藍光發光二極體
102e:電極
104:螢光粉層
104a:封膠層
104b:分散粒子
104g:綠色螢光粉
104r:紅色螢光粉
104y:黃色螢光粉
106:載板
106a:導電接墊
106b:封裝體
106c:凹槽
108:導線
110:膠水
112:螢光粉溶液
112S:上表面
114:混和容器
118:點膠容器
20:顯示裝置
202:顯示面板
204:背光模組
206:增光片
208:擴散片
210:導光板
212:反射片
214:光源模組
218:電路板
220:中框
222:背框
224:覆蓋板
C1,C2:曲線
L1:第一光線
L2:第二光線
L3:第三光線
L4:第四光線
R1,R2,R3,R4:區域
S12,S14,S16,S18:步驟
T1,T2,T3:穿透光譜
第1圖繪示本發明(揭露)的一實施例的發光二極體封裝結構的剖視示意圖。
第2圖繪示本發明(揭露)的一實施例的製作發光二極體封裝結構的方法的流程示意圖。
第3圖繪示本發明(揭露)的一實施例的形成螢光粉層的方法示意圖。
第4圖繪示本發明(揭露)的一實施例的顯示裝置的爆炸示意圖。
第5圖繪示本發明(揭露)的一實施例的彩色濾光片的穿透光譜。
第6圖繪示一實施例的顯示裝置與對照實例的顯示裝置在操作於最高灰階時所產生的白光光譜示意圖。
第7圖繪示一實施例的顯示裝置所產生的色域與標準紅綠藍色域(sRGB)在CIE 1931色度座標中的區域示意圖。
第8圖繪示一實施例的顯示裝置所產生的色域與DCI-P3色域在CIE 1976色度座標中的區域示意圖。
10:發光二極體封裝結構
10S,102S:出光面
102:藍光發光二極體
102e:電極
104:螢光粉層
104a:封膠層
104b:分散粒子
104g:綠色螢光粉
104r:紅色螢光粉
104y:黃色螢光粉
106:載板
106a:導電接墊
106b:封裝體
106c:凹槽
108:導線
L1:第一光線
L2:第二光線
L3:第三光線
L4:第四光線
Claims (20)
- 一種發光二極體封裝結構,包括: 一藍光發光二極體,產生一第一光線;以及 一螢光粉層,設置於該藍光發光二極體上,且該螢光粉層包括綠色螢光粉、紅色螢光粉以及黃色螢光粉,其中在該綠色螢光粉、該紅色螢光粉與該黃色螢光粉的總重量百分比為100%時,該黃色螢光粉的重量百分比為1%~10%。
- 如請求項1所述的發光二極體封裝結構,其中該綠色螢光粉將該第一光線轉換為一第二光線,該第二光線的峰值波長範圍為530奈米至540奈米,該紅色螢光粉將該第一光線轉換為一第三光線,該第三光線的峰值波長範圍為630奈米至650奈米,該黃色螢光粉將該第一光線轉換為一第四光線,且該第四光線的峰值波長範圍為550奈米至570奈米。
- 如請求項1所述的發光二極體封裝結構,其中該螢光粉層另包括一封膠層,且該綠色螢光粉、該紅色螢光粉與該黃色螢光粉分散設置在該封膠層中。
- 如請求項1所述的發光二極體封裝結構,其中該第一光線的峰值波長範圍為450奈米至460奈米。
- 如請求項1所述的發光二極體封裝結構,其中在該綠色螢光粉、該紅色螢光粉與該黃色螢光粉的總重量百分比為100%時,該綠色螢光粉的重量百分比為35%~80%,且該紅色螢光粉的重量百分比為15%~55%。
- 一種顯示裝置,包括: 一顯示面板;以及 一背光模組,設置於該顯示面板的背面,且該背光模組包括至少一發光二極體封裝結構,其中該至少一發光二極體封裝結構包括: 一藍光發光二極體,用於產生一第一光線;以及 一螢光粉層,設置於該藍光發光二極體上,且該螢光粉層包括一綠色螢光粉、一紅色螢光粉以及一黃色螢光粉,其中在該綠色螢光粉、該紅色螢光粉與該黃色螢光粉的總重量百分比為100%時,該黃色螢光粉的重量百分比為1%~10%。
- 如請求項6所述的顯示裝置,其中該綠色螢光粉將該第一光線轉換為一第二光線,該第二光線的峰值波長範圍為530奈米至540奈米,該紅色螢光粉將該第一光線轉換為一第三光線,該第三光線的峰值波長範圍為630奈米至650奈米,該黃色螢光粉將該第一光線轉換為一第四光線,且該第四光線的峰值波長範圍為550奈米至570奈米。
- 如請求項7所述的顯示裝置,其中該第二光線、該第三光線與該第四光線通過該顯示面板混和出一白光,該白光具有一光譜,且該光譜從波長為415奈米至455奈米的積分值對該光譜從波長為400奈米至500奈米的積分值的比例小於或等於50%。
- 如請求項8所述的顯示裝置,其中該白光在CIE 1931的色度座標上的x值範圍為0.283至0.343,y值範圍為0.299至0.359。
- 如請求項8所述的顯示裝置,其中該白光在CIE 1931的色度座標上的x值範圍為0.25至0.31,y值範圍為0.26至0.32。
- 如請求項6所述的顯示裝置,其中該螢光粉層另包括一封膠層,且該綠色螢光粉、該紅色螢光粉與該黃色螢光粉分散設置在該封膠層中。
- 如請求項6所述的顯示裝置,其中該第一光線的峰值波長範圍為450奈米至460奈米。
- 如請求項6所述的顯示裝置,其中在該綠色螢光粉、該紅色螢光粉與該黃色螢光粉的總重量百分比為100%時,該綠色螢光粉的重量百分比為35%~80%,且該紅色螢光粉的重量百分比為15%~55%。
- 如請求項6所述的顯示裝置,其中該顯示裝置所產生的色域在CIE 1931的色度座標上的區域對標準紅綠藍色域在CIE 1931的色度座標上的區域的涵蓋率為100%。
- 如請求項6所述的顯示裝置,其中該顯示裝置所產生的色域在CIE 1976的色度座標上的區域對DCI-P3色域在CIE 1976的色度座標上的區域的涵蓋率大於95%。
- 一種製作發光二極體封裝結構的方法,包括: 將一藍光發光二極體設置於一載板上; 按比例將綠色螢光粉、紅色螢光粉以及黃色螢光粉混和在一膠水中,以形成一螢光粉溶液,其中在該綠色螢光粉、該紅色螢光粉與該黃色螢光粉的總重量百分比為100%時,該黃色螢光粉的重量百分比為1%~10%; 將該螢光粉溶液的至少一部分設置在該藍光發光二極體上;以及 固化該螢光粉溶液的該至少一部分,以於該藍光發光二極體上形成一螢光粉層。
- 如請求項16所述的製作發光二極體封裝結構的方法,其中混和有該綠色螢光粉、該紅色螢光粉、該黃色螢光粉的該膠水係設置在一混和容器中,且形成該螢光粉溶液還包括對混和有該綠色螢光粉、該紅色螢光粉、該黃色螢光粉的該膠水進行攪拌與真空脫泡。
- 如請求項17所述的製作發光二極體封裝結構的方法,其中進行攪拌還包括於該膠水中加入多個分散粒子。
- 如請求項17所述的製作發光二極體封裝結構的方法,還包括在進行攪拌與真空脫泡之後,將該混和容器中的該螢光粉溶液的三分之二置入一點膠容器中,以從該點膠容器將該螢光粉溶液的該至少一部分設置於該藍光發光二極體上。
- 如請求項16所述的製作發光二極體封裝結構的方法,其中該綠色螢光粉將該藍光發光二極體產生的一第一光線轉換為一第二光線,該第二光線的峰值波長範圍為530奈米至540奈米,該紅色螢光粉將該第一光線轉換為一第三光線,該第三光線的峰值波長範圍為630奈米至650奈米,該黃色螢光粉將該第一光線轉換為一第四光線,且該第四光線的峰值波長範圍為550奈米至570奈米。
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