TWI742979B - Sintering aid for buffer layer, resistance including buffer layer and resistance manufacturing method - Google Patents

Abstract

The invention provides a sintering aid for a buffer layer, which comprises a boro-barium-zinc-silica-alumina-vanadium glass frit. The present invention also provides a resistor including a buffer layer. Because the buffer layer contains the aforementioned boron-barium-zinc-silica-aluminum-vanadium glass frit, the resistance layer can be lifted from the substrate by the buffer layer sandwiched between the substrate and the resistance layer. The adhesion force can further avoid the deformation of the resistance layer, so that the resistance exhibits good instantaneous load, resistance tolerance and resistance temperature coefficient. The present invention also provides a method for manufacturing the resistor, which has the advantage of improving production cost-effectiveness.

Description

Sintering aid for buffer layer, resistance including buffer layer and resistance manufacturing method

The present invention relates to a sintering aid, in particular to a sintering aid for chip resistors. The invention also relates to a chip resistor and its manufacturing method.

Chip resistors are generally used to limit current or reduce voltage. Their manufacturing method is to print a metal thick film conductor on an alumina ceramic substrate and coat a protective layer on the outer layer. With the advancement of science and technology, circuit board assembly has become more and more complicated. There are stricter requirements for the adhesion between layers of chip resistors, short-time overload (STOL), resistance tolerance (COV%), and resistance temperature coefficient. Require.

US Patent No. 6,943,662 discloses the above-mentioned manufacturing method of directly providing the resistive layer on the substrate, but there is a problem that the resistive layer is easily deformed; in addition, it discloses that the use of silver-palladium electrode paste has the problem of high cost. U.S. Invention Patent Application Publication No. 20110089025 and U.S. Invention Patent No. 5680,092 both disclose the vapor deposition method, but the materials and process equipment required for these methods are not only expensive, but also have complex processes and lower production costs. problem.

To sum up, it can be seen that a process that takes into account the cost-effectiveness of chip resistor production and the resistance to deformation of the resistive layer is still to be developed.

In order to solve the above problems, the present invention provides a sintering aid for a buffer layer, which comprises a first borobarium zinc silicon aluminum vanadium-based glass frit. The first borobarium zinc silicon aluminum vanadium-based glass frit includes B ₂ O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O ₅ , and based on the total number of moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5 , B 2} O _{3 The content of SiO 2} is 14.01 mol% to 34 mol%, the content of BaO is 1.5 mol% to 8.44 mol%, the content of ZnO is 20.06 mol% to 34.6 mol%, the content of SiO 2 is 23 mol% to 49.11 mol%, Al ₂ O _{3 The content of V 2} O ₅ ranges from 4.9 mol% to 7.60 mol%, and the content of V 2 O 5 ranges from 0.77 mol% to 1.85 mol%.

The above-mentioned first boron barium zinc silicon aluminum vanadium glass frit can be expressed in the form of B ₂ O ₃ -BaO-ZnO-SiO ₂ -Al ₂ O ₃ -V ₂ O ₅ .

The sintering aid for the buffer layer of the present invention contains specific components and their respective specific content ranges, so that when the buffer layer using them as the main component is applied to resistors, except for the resistor layer, the buffer layer can be sandwiched between the substrate and the resistor layer. The layer improves the adhesion of the resistive layer to the substrate, and when laser cutting is used to correct the resistance value of the resistive layer, it can reduce the probability of destroying the resistive layer and increase the production yield of the resistive layer, further avoiding the deformation of the resistive layer or reducing the different layers. The risk of spallation caused by the difference in stress between the substrate and the resistance layer (such as the substrate and the resistance layer) makes the resistance exhibit good instantaneous load, resistance tolerance and resistance temperature coefficient.

Preferably, in the first boron barium zinc silicon aluminum vanadium glass frit, based on the total number of moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5, B The content of 2} O ₃ is 17 mol% to 34 mol%, the content of BaO is 1.5 mol% to 7.5 mol%, the content of ZnO is 22 mol% to 34.6 mol%, the content of SiO ₂ is 23 mol% to 45 mol%, Al ₂ O _{3 The content of V 2} O ₅ is between 4.9 mol% and 7.2 mol%, and the content of V 2 O 5 is between 0.9 mol% and 1.85 mol%.

More preferably, in the first boron barium zinc silicon aluminum vanadium glass frit, _{the total number of moles of B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O ₅ is used as a reference, B _{The content of 2} O ₃ is 19.88 mol% to 31.39 mol%, the content of BaO is 2.55 mol% to 6.45 mol%, the content of ZnO is 24.30 mol% to 32.61 mol%, and _{the content of SiO 2} is 26.50 mol% to 41.47 mol% , _{The content of Al 2} O ₃ is 5.25 mol% to 6.80 mol%, and _{the content of V 2} O ₅ is 1.09 mol% to 1.72 mol%.

In some embodiments, the glass softening temperature (Ts) of the first borobarium zinc silicon aluminum vanadium-based glass frit is 586°C to 739°C.

Preferably, the glass softening temperature of the first boron barium zinc silicon aluminum vanadium glass frit is 586°C to 717°C, for example: 586°C, 590°C, 600°C, 620°C, 640°C, 660°C, 680°C, 700°C, 710°C or 717°C; more preferably, the glass softening temperature of the first borobarium zinc silicon aluminum vanadium glass frit is 608°C to 695°C.

Preferably, the average particle size of the first boro-barium-zinc-silica-aluminum-vanadium-based glass frit is 1 μm to 5 μm.

The present invention also provides a resistor, which includes a composite layered structure and two side electrodes, the two side electrodes are respectively disposed on opposite sides of the composite layered structure; and the composite layered structure sequentially includes a substrate and a buffer Layer and a resistance layer, wherein the buffer layer is formed of a composition for the buffer layer, and the composition for the buffer layer includes the above-mentioned sintering aid for the buffer layer, a filler, a first resin and a first organic solvent .

By providing the aforementioned buffer layer, the present invention can reduce the amount of shape of the printed resistive layer pattern after sintering, that is, the amount of deformation is below 5%, and can reduce the amount of glass frit added to the resistive layer. Therefore, the resistance layer can still use the buffer layer sandwiched between the substrate and the resistance layer to improve the adhesion between it and the substrate, so as to avoid the problem of large resistance tolerance, improve the instant load, and effectively increase the production capacity and resistance. The reliability.

The sintering aid for the buffer layer of the present invention forms a liquid phase during the sintering process, can increase the bonding strength of the contact interface between the resistance layer and the buffer layer, and regulate the difference between the thermal expansion and sintering shrinkage of the resistance layer and the base material.

In some embodiments, the filler includes any one or a combination of aluminum oxide, zinc oxide, silicon oxide, and titanium oxide.

In some embodiments, the first resin includes any one or a combination of ethyl cellulose resin and acrylic resin. In the present invention, the first resin is used so that the composition for the buffer layer can be screen-printed.

In some embodiments, the first organic solvent includes any one or a combination of terpineols, ethers, and esters. The first organic solvent of the present invention is used as a diluent.

In some embodiments, the substrate is a ceramic substrate.

In some embodiments, in the composition for the buffer layer, the weight ratio of the sintering aid for the buffer layer to the filler is 0.4:0.6 to 0.75:0.25, but not limited to this; preferably, the buffer layer The weight ratio of the sintering aid to the filler is 0.45:0.55 to 0.75:0.25, for example, 0.45:0.25, 0.55:0.45, 0.60:0.45, or 0.65:0.35. More preferably, the weight ratio of the sintering aid for the buffer layer to the filler is 0.50:0.50 to 0.70:0.30. The present invention controls the difference between the thermal expansion coefficient and sintering shrinkage of the resistance layer and the substrate by adjusting the weight ratio of the two, avoiding deformation of the resistance layer and avoiding the resistance layer falling off, so as to ensure that the composite layered structure of the resistance has good interlayer adhesion , And exhibit low resistance, good resistance tolerance, resistance temperature coefficient and instantaneous load.

In some embodiments, in the composition for the buffer layer, based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, the sintering aid for the buffer layer The content of the agent is 25.6 wt% to 48 wt%; the content of the filler is 16 wt% to 38.4 wt%; the content of the first resin is 1 wt% to 2 wt%; and the content of the first organic solvent is 30 Weight percentage to 40 weight percentage.

Preferably, in the composition for the buffer layer, the content of the sintering aid for the buffer layer is based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent From 29 weight percent to 48 weight percent, for example: 29 weight percent, 31 weight percent, 33 weight percent, 35 weight percent, 37 weight percent, 39 weight percent, 41 weight percent, 43 weight percent, 45 weight percent, 47 weight percent Or 48 weight percent; the content of the filler is 16 weight percent to 35 weight percent, for example: 16 weight percent, 18 weight percent, 20 weight percent, 22 weight percent, 24 weight percent, 26 weight percent, 28 weight percent, 30 weight percent Percentage, 32% by weight, 34% by weight or 35% by weight; the content of the first resin is 1% by weight to 2% by weight, for example: 1% by weight, 1.2% by weight, 1.4% by weight, 1.6% by weight, 1.8% by weight Or 2% by weight; and the first organic solvent The content of the agent is 30% to 40% by weight, for example: 30% by weight, 32% by weight, 34% by weight, 36% by weight, 38% by weight or 40% by weight.

In some embodiments, the resistance layer is formed of a resistance paste, and the resistance paste includes a metal powder, a sintering aid for the resistance layer, a second resin, and a second organic solvent.

Preferably, the second resin includes any one or a combination of ethyl cellulose resin and acrylic resin; more preferably, the second resin is the same as the first resin.

Preferably, the second organic solvent includes any one or a combination of terpineols, ethers, and esters; more preferably, the second organic solvent is the same as the first organic solvent.

The sintering aid for the resistance layer includes the second boron-barium-zinc-silica-aluminum-vanadium-based glass frit and can be expressed in the form of B ₂ O ₃ -BaO-ZnO-SiO ₂ -Al ₂ O ₃ -V ₂ O ₅ .

In some embodiments, in the second borobarium zinc silicon aluminum vanadium-based glass frit, the second borobarium zinc silicon aluminum vanadium-based glass frit includes B ₂ O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O ₅ , and based on the total moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5 , the content of B 2} O ₃ is 26.70 mol% to 29.1 mol%, the content of BaO is 10.1 mol% to 12.64 mol%, the content of ZnO is 15.39 mol% to 19.9 mol%, _{the content of SiO 2} is 37.2 mol% to 42.36 mol%, and _{the content of Al 2} O ₃ is 2.68 mol% To 3 mol%, and _{the content of V 2} O ₅ is 0.22 mol% to 0.6 mol%.

Preferably, in the second boron barium zinc silicon aluminum vanadium glass frit, the second boron barium zinc silicon aluminum vanadium glass frit includes B ₂ O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O ₅ , and based on the total moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5 , the content of B 2} O ₃ is 27 mol% to 29.1 mol%, BaO the content of 10.1mol% to 12.2mol%, 16.1mol% of the content of ZnO to 19.9mol%, SiO ₂ content of the 37.2mol% to 41.5mol%, the content of Al ₂ O ₃ is 2.73mol% to 3mol%, And _{the content of V 2} O ₅ is 0.28 mol% to 0.6 mol%.

More preferably, in the second boron barium zinc silicon aluminum vanadium glass frit, based on the total number of moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5, B The content of 2} O ₃ is 27.40 mol% to 28.79 mol%, the content of BaO is 10.48 mol% to 11.92 mol%, the content of ZnO is 16.69 mol% to 19.26 mol%, and _{the content of SiO 2} is 37.98 mol% to 40.89 mol% , _{The content of Al 2} O ₃ is from 2.77 mol% to 2.95 mol%, and _{the content of V 2} O ₅ is from 0.33 mol% to 0.55 mol%.

In some embodiments, the glass softening temperature of the second boro-barium-zinc-silica-aluminum-vanadium-based glass frit is 565°C to 690°C.

Preferably, the glass softening temperature of the second boron barium zinc silicon aluminum vanadium glass frit is 565°C to 675°C, for example: 565°C, 570°C, 580°C, 590°C, 600°C, 610°C, 620°C, 630°C, 640°C, 650°C, 660°C, 670°C or 675°C; more preferably, the glass softening temperature of the second boron-barium-zinc-silico-alumina-vanadium-based glass frit is 585°C to 655°C. By adjusting the temperature difference between the glass softening point of the sintering aid for the buffer layer and the sintering aid for the resistance layer, the present invention can reduce the shrinkage deformation and residual stress of the resistance layer during the sintering process.

According to the present invention, the second boron barium zinc silicon aluminum vanadium glass frit in the resistance layer sintering aid has a specific glass softening point range, which can further prevent the resistance layer from deforming and falling off, so as to ensure that the resistance layer has a good Adhesion, and exhibit low resistance, good resistance tolerance, resistance temperature coefficient and instantaneous load.

Preferably, the second borobarium zinc silicon aluminum vanadium glass frit is powder; more preferably, the average particle diameter of the second borobarium zinc silicon aluminum vanadium glass frit is 1 micrometer to 5 micrometers.

In some embodiments, the metal powder includes copper and nickel, and the weight ratio of copper to nickel is 0.35:0.65 to 0.8:0.2. Preferably, the weight ratio of copper to nickel is 0.35:0.65 to 0.65:0.35, for example, 0.40:0.60, 0.45:0.55, 0.50:0.50, 0.55:0.45, or 0.60:0.40. The resistance layer of the present invention does not use silver-palladium alloy resistance paste, so the production cost can be effectively reduced.

In some embodiments, the metal powder includes copper powder and nickel powder, or copper-nickel alloy powder.

According to the present invention, controlling the weight ratio of copper and nickel can further prevent the temperature coefficient of resistance from being too high.

In some embodiments, in the electrode paste, the total weight of the metal powder, the sintering aid for the resistance layer, the second resin, and the second organic solvent is used as the base metal powder. 79 weight percent; the content of the sintering aid for the resistance layer is 2 weight percent to 6 weight percent; the content of the second resin is 1 weight percent to 3 weight percent; and the content of the second organic solvent is 17 weight percent to 25% by weight.

Preferably, in the electrode paste, based on the total weight of the metal powder, the sintering aid for the resistance layer, the second resin and the second organic solvent, the content of the metal powder is 67% to 79% by weight Weight percentages, for example: 67 weight percentages, 70 weight percentages, 73 weight percentages, 76 weight percentages or 79 weight percentages; the content of the sintering aid for the resistance layer is 2.5 weight percentages to 5.5 weight percentages, for example: 2.5 weight percentages, 3 Weight percent, 3.5 weight percent, 4 weight percent, 4.5 weight percent, 5 weight percent, or 5.5 weight percent; the content of the second resin is 1 weight percent to 3 weight percent, for example: 1 weight percent, 1.5 weight percent, 2 weight percent Percentage, 2.5% by weight, or 3% by weight, and the content of the second organic solvent is 17% by weight to 25% by weight, for example: 17% by weight, 19% by weight, 21% by weight, 23% by weight, or 25% by weight.

According to the present invention, controlling the content of the sintering aid for the resistance layer can prevent the resistance from increasing and prevent the resistance layer from falling off.

Preferably, the metal powder is spherical powder.

Preferably, the average particle size of the metal powder is 0.3 μm to 10 μm. When the particle size of the metal powder is in the aforementioned range, the stacking density of the metal powder and the operability of screen printing can be improved.

In some embodiments, the composite layered structure further includes a back electrode and a front electrode; wherein the back electrode is provided on the bottom surface of the substrate; the area of the top surface of the buffer layer Smaller than the area of the top surface of the substrate, the area of the top surface of the resistance layer is smaller than the area of the top surface of the buffer layer, and the top surface of the substrate and the top surface of the buffer layer are provided with the front electrode, and the top surface of the front electrode The surface is aligned with the top surface of the resistance layer to form a co-planar surface.

Preferably, the top surface area and the bottom surface area of the substrate, the buffer layer, the resistance layer and the back electrode are the same size.

In other embodiments, the resistor further includes a protective layer, and the protective layer is disposed on the top surface (ie, the outermost surface) of the composite layered structure to protect the resistor layer. The top surface of the composite layered structure That is, it refers to the surface formed by the top surface of the front electrode and the top surface of the resistance layer.

The present invention further provides a method for manufacturing a resistor, which includes the following steps: step (a): forming a buffer layer on the surface of a substrate; step (b): forming a resistance layer on the surface of the buffer layer, wherein the buffer layer Sandwiched between the substrate and the resistance layer to obtain a composite layered structure; step (c): set a side electrode on opposite sides of the composite layered structure to obtain a resistance blank; and step (d ): Sintering the resistor blank to obtain the resistor; wherein the buffer layer is formed of a composition for the buffer layer, and the composition for the buffer layer includes the aforementioned sintering aid for the buffer layer, a filler, and a first Resin and a first organic solvent.

Preferably, the method of forming the buffer layer in this step (a) and the method of forming the resistance layer in this step (b) are both formed by the screen printing method. Compared with the formation method using the vapor deposition method, the screen printing method is adopted. The method has high production efficiency.

Preferably, the step (a), the step (b) and the step (c) may each include a drying step, and the drying temperature is 100°C to 150°C.

Preferably, the drying time of each of the step (a), the step (b) and the step (c) is 10 minutes to 15 minutes.

Preferably, the sintering temperature in this step (d) is 880°C to 920°C.

Preferably, the sintering time in this step (d) is 10 minutes to 15 minutes.

Preferably, before step (a), a back electrode can be formed on the bottom surface of the substrate. More preferably, the composite layered structure includes the back electrode, the substrate, the buffer layer, the resistance layer and a front electrode; the top surface area of the buffer layer is smaller than the top surface area of the substrate, and the top surface of the resistance layer The area is smaller than the area of the top surface of the buffer layer, and the step (b) further includes: forming the front electrode on the top surface of the substrate and the top surface of the buffer layer, and the top surface of the front electrode and the top surface of the resistance layer Cut straight to form a total plane.

Preferably, after sintering the resistor blank in the step (d), a protective layer is further formed on the top surface of the resistor blank or the composite layered structure, and then the sintering step and the electrode plating step are performed to form the outer electrode layer, The resistance is finally obtained.

In some embodiments, the material of the protective layer includes glass. Preferably, the sintering temperature of the protective layer is 400°C to 500°C. Preferably, the sintering time of the protective layer is 10 minutes to 15 minutes.

In some embodiments, the material of the protective layer includes epoxy-based materials. Preferably, the thermal curing temperature of the protective layer is 150°C to 300°C. Preferably, the thermal curing time of the protective layer is 10 minutes to 30 minutes.

Preferably, the above electrode electroplating step refers to electroplating copper, nickel and/or tin on the surface of the side electrode, the front electrode and the back electrode; in some embodiments, the electrode electroplating step may precede the Copper electroplating is performed on the surfaces of the side electrodes, the front electrode and the back electrode to form a copper outer electrode layer; then nickel electroplating is performed on the surface of the copper outer electrode layer to form a nickel outer electrode layer; and on the surface of the nickel outer electrode layer Tin electroplating is carried out to form a tin external electrode layer, that is, a set of three-layered external electrodes formed by a copper external electrode layer, a nickel external electrode layer and a tin external electrode layer are covered on the side electrode, the front electrode and the back electrode. The outer surface. The electrode of the present invention is not limited to the use of precious metals such as silver and palladium, so it helps to reduce the production cost.

In this specification, the average particle size refers to the particle size corresponding to the cumulative particle size distribution percentage reaching 50% in the statistics of the particle size distribution percentage of the particles, that is, D ₅₀ .

To sum up, by adding a buffer layer to the resistor of the present invention, the resistance layer can increase the adhesion to the substrate, and can also avoid deformation of the resistance layer, so that the resistance exhibits good instantaneous load, resistance tolerance and resistance temperature coefficient, thereby increasing the resistance of the resistance. Production cost-effective, so it has market competitiveness.

1: resistance

10: Composite layered structure

20: Side electrode

30: protective layer

100: side

110: top surface

120: back electrode

130: substrate

131: Bottom

132: top surface

140: buffer layer

141: top surface

150: resistance layer

151: Top Surface

160: front electrode

161: top surface

FIG. 1 is a schematic diagram of the cross-sectional structure of the resistor of the present invention.

Figures 2A and 2B are top-view photographs of the resistor.

Several examples and comparative examples are listed below to illustrate the implementation of the present invention. Those familiar with the art can easily understand the advantages and effects of the present invention through the content of this specification, and proceed without departing from the spirit of the present invention. Various modifications and changes are made to implement or apply the content of the present invention.

Example 1: Resistance

As shown in FIG. 1, the resistor 1 includes a composite layered structure 10, two side electrodes 20, and a protective layer 30. The two side electrodes 20 are respectively disposed on two opposite sides 100 of the composite layered structure 10. The protective layer 30 Is disposed on the top surface 110 of the composite layered structure 10; and the composite layered structure 10 includes two back electrodes 120, a substrate 130, a buffer layer 140, a resistive layer 150 and two front electrodes 160; wherein, the two back surfaces The electrodes 120 are symmetrically arranged on the bottom surface 131 of the substrate 130, the area of the top surface 141 of the buffer layer 140 is smaller than the area of the top surface 132 of the substrate 130, and the area of the top surface 151 of the resistance layer 150 is smaller than that of the buffer layer 140. The area of the surface 141, and the top surface 132 of the substrate 130 and the top surface 141 of the buffer layer 140 are further symmetrically provided with the two front electrodes 160, and the top surface 161 of the two front electrodes 160 is cut from the top surface 151 of the resistance layer 150 Align to form a common plane. Wherein, the buffer layer 140 is formed of a composition for the buffer layer, and the composition for the buffer layer includes a sintering aid for the buffer layer, a filler, a first resin and a first organic solvent.

Example 2: Manufacturing method of resistor

1. Preparation of composite layered structure:

(1) Preparation of the back electrode: the back electrode is printed on the bottom surface of the alumina substrate by screen printing, the material of which is copper, and the back electrode is dried at 100°C to 150°C for 10 minutes to 15 minutes.

(2) Prepare the buffer layer: mix the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent to make the composition for the buffer layer, and print it on the top surface of the alumina substrate by screen printing. After drying at 100°C to 150°C for 10 minutes to 15 minutes, a buffer layer is formed.

(3) Preparation of the resistance layer: after mixing metal powder, a sintering aid for the resistance layer, a second resin and a second organic solvent, a resistance paste is made, and printed on the top surface of the buffer layer by screen printing, with 100% Drying at ℃ to 150 ℃ for 10 minutes to 15 minutes to form a resistance layer.

(4) Preparation of the front electrode: screen printing the front electrode on the top surface of the alumina substrate and the top surface of the buffer layer. The material is copper, so that the top surface of the front electrode is flush with the top surface of the resistance layer. In order to form a horizontal co-planar surface, drying is carried out at 100°C to 150°C for 10 minutes to 15 minutes.

2. Preparation of side electrodes:

Coat the side electrodes on the opposite sides of the composite layered structure (that is, the sides formed by the side surfaces of the front electrode, the substrate and the back electrode) by roll dipping. The material is copper to form a resistive blank, and then the temperature is 880℃ Perform co-sintering at 920°C for 10 minutes to 15 minutes.

3. Preparation of the protective layer:

After the resistance layer is laser cut to adjust the resistance value, the protective layer is screen-printed on the coplanar surface formed by the front electrode and the resistance layer, that is, the outermost surface of the composite layered structure, to prevent the resistance layer from contacting the outside world Air causes oxidation and vulcanization; among them, the protective layer adopts epoxy resin, the thermal curing temperature of the protective layer is 150°C to 300°C, and the thermal curing time is 10 minutes to 30 minutes.

4. Preparation of the outer electrode layer: firstly perform copper electroplating on the surface of the side electrode, the front electrode and the back electrode to form a copper outer electrode layer; then perform nickel electroplating on the surface of the copper outer electrode layer, To form a nickel outer electrode layer; and tin electroplating on the surface of the nickel outer electrode layer to form a tin outer electrode layer, that is, a set of three-layer structure is formed by the copper outer electrode layer, the nickel outer electrode layer and the tin outer electrode layer. The electrode covers the outer surface of the side electrode, the front electrode and the back electrode.

Test example 1: Comparison of resistance efficiency with different sintering aid formulations for buffer layers

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer

The formulations of the sintering aids for each group of buffer layers are shown in Table 1. The fillers are all Al ₂ O ₃ , the first resin is all ethyl cellulose, and the first organic solvent is all terpineol. Based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, each group adopts the same ratio: the content of the sintering aid for the buffer layer is 38.40 weight percent; the content of the filler is 25.60 weight percent The content of the first resin is 1.5 weight percent; and the content of the first organic solvent is 34.50 weight percent.

(2) Resistance paste

The formulations of the sintering aids for the resistor layers of each group are the same. The sintering aids for the resistive layer include: _{the content of B 2} O ₃ is 28.09 mol%, the content of BaO is 11.20 mol%, and the content of ZnO is 17.98 mol%, The content of SiO ₂ is 39.43 mol%, the content of Al ₂ O ₃ is 2.86 mol%, and the content of V ₂ O ₅ is 0.44 mol%. In the resistance paste, based on the total weight of the metal powder, the resistance layer sintering aid, the second resin and the second organic solvent, the same proportions are used for each group as follows: the content of copper is 43.80 weight percent; the content of nickel is 29.20 weight The content of the resistance layer sintering aid is 4.00% by weight; the content of the second resin is 2.00% by weight; and the content of the second organic solvent is 21.00% by weight; wherein, the second resin is the same as the first resin, and the second organic The solvent is the same as the first organic solvent.

(3) Sintering temperature

When the suffix of each group label is singular (ie N-1, N-3, N-5 and N-7, N is the number of the embodiment), the sintering temperature is 880℃; the suffix of each group label is an even number ( Namely N-2, N-4, N-6 and N-8), the sintering temperature is 920°C.

(4) Efficacy test

1. Glass softening point: According to ASTM E1545, the Ts of the sintering aid for each buffer layer is measured by a Thermomechanical Analysis (TMA).

2. Resistance layer deformation: the calculation formula for resistance layer deformation: [(maximum width-minimum width)/maximum width]*100%, that is (△W/W)*100%, when the resistance layer deformation is greater than 5% When it is confirmed, the resistance layer is determined to be significantly deformed, as shown in FIG. 2A; when the deformation of the resistance layer is less than 5%, it is determined that the resistance layer is not deformed, as shown in FIG. 2B.

3. Adhesion: Tested in accordance with the ISO 2409 standard, where level 0 (ISO class 0) means "the cutting edge is smooth and complete, and the coating film does not peel off at all"; level 1 (ISO class 1) means "cutting line crossing point" There are small debris and the spalling area is less than 5% of the total area"; Level 2 (ISO class 2) means that "the edges and intersections of the cutting line have small debris, and the spalling area accounts for 5% to less than 15% of the total area"; Level 3 (ISO class 3) means "the edge of the cutting line, small squares are partially or completely peeled off, and the peeling area accounts for 15% to less than 35% of the total area"; level 4 (ISO class 4) means "the edge of the cutting line, Part or all of the small squares are peeled off, and the peeling area accounts for 35% to less than 65% of the total area"; and the level 5 (ISO class 5) means that "the edges of the cutting line and the small squares are partially or completely peeled off, and the peeling area accounts for the total area. The area is more than 65%".

4. Resistivity: Conduct resistance measurement according to Article 4.5 of IEC 60115-1/JIS C 5201-1.

5. Resistance tolerance (COV%): Resistance standard deviation/resistance average, resistance tolerance greater than 3% will affect the resistance yield.

6. Temperature Coefficient of Resistance (TCR): The measurement and calculation of TCR (±100ppm/°C) are carried out in accordance with IEC 60115-1 Article 4.8; the test temperature is T1 (25°C) to T2 (155℃), R2 is the measured resistance value at T2 point, R1 is the measured resistance value at T1 point, the calculation formula is TCR(ppm/℃)=(R2-R1)/R1×1/(T2-T1) ×10 ⁶ . In addition, when the TCR exceeds the range of ±100ppm/°C, it will affect the resistance stability of the resistance under changes in ambient temperature. Since the TCR of commercially available resistors can exceed ±100ppm/°C, whether the TCR is within ±100ppm/°C is not the basis for judging whether the resistance is qualified or not according to the present invention.

7. Short-time overload (STOL): According to IEC 60115-1, Article 4.13, with a rated overload of 5 times for 5 seconds for STOL measurement.

_{From the test results in Table 2, it can be seen that the B 2} O ₃ content in the sintering aid for the buffer layer of Comparative Example 3-1 and Comparative Example 3-2 is 37.02 mol%, which is higher than 34 mol%, and the BaO content is 0.63 mol%. Less than 1.5 mol%, ZnO content is 36.68 mol%, higher than 34.6 mol%, SiO ₂ content is 19.16 mol%, less than 23 mol%, Al ₂ O ₃ content is 4.49 mol%, less than 4.9 mol%, and V _The content of 2 O ₅ is 2.02 mol%, which is higher than 1.85 mol%, so its glass softening point is only 565°C. In addition, due to the problem of excessive deformation of the resistance layer of Comparative Example 3-1 and Comparative Example 3-2, subsequent tests could not be performed.

_{The B 2} O ₃ content in the sintering aid for the buffer layer of Example 3-1 and Example 3-2 is 14.01 mol%, BaO content is 8.44 mol%, ZnO content is 20.06 mol%, and SiO ₂ content is 49.11 mol %, the _{content of Al 2} O ₃ is 7.60 mol%, and the content of V ₂ O ₅ is 0.77 mol%. The glass softening point temperature is 739℃. The structure has been significantly improved.

_{Finally, the B 2} O ₃ content in the sintering aid for the buffer layer of Examples 3-3 to 3-8 is between 17 mol% and 34 mol%, the BaO content is between 1.5 mol% and 7.5 mol%, and the ZnO content is between At 22 mol% to 34.6 mol%, the SiO ₂ content is between 23 mol% and 45 mol%, the Al ₂ O ₃ content is between 4.9 mol% and 7.2 mol%, and the V ₂ O ₅ content is between 0.9 mol% and 1.85 mol%, And the temperature of the glass softening point is between 608℃ and 695℃, so that not only the deformation of the resistance layer is less than 5%, but also has better adhesion (all belong to the 0th grade), and at the same time exhibits low resistance and good resistance Tolerance, temperature coefficient of resistance and instantaneous load.

Test Example 2: Comparison of electrical resistance efficiency with different weight ratios of sintering aids and fillers for buffer layers

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer

The formula of the sintering aid for the buffer layer is the same as that of Examples 3-5 and 3-6: the _{content of B 2} O _{3 is} 25.67 mol%, the content of BaO is 4.48 mol%, the content of ZnO is 28.48 mol%, SiO ₂ The contents are all 33.93 mol%, the Al ₂ O ₃ contents are all 6.02 mol%, and the V ₂ O ₅ contents are all 1.40 mol%, and the formulation of the buffer layer composition is shown in Table 3, where the filler is Al ₂ O _{3. The} first resin is ethyl cellulose, and the first organic solvent is terpineol.

(2) Resistance paste: same as test example 1.

(3) Sintering temperature: Same as Test Example 1, except that the sintering temperature of Examples 4-5 is 920°C.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 4.

It can be seen from Table 4 that the deformation of the resistance layer of each group of resistors is All are less than 5%, and have good instantaneous load, resistance tolerance and resistance temperature coefficient.

Furthermore, compared with Example 4-5, the weight ratio of the sintering aid for the buffer layer and the filler in Example 3-5, Example 3-6, Example 4-1 to Example 4-4 is intermediate Between 0.45:0.55 and 0.75:0.25, and the content of the sintering aid for the buffer layer is between 29% by weight and 48% by weight; the content of filler is between 16% by weight and 35% by weight; the content of the first resin is between 1% by weight Percent to 2% by weight; and the content of the first organic solvent is 30% to 40% by weight, so it can have better adhesion (all belong to the 0th grade), while exhibiting low resistance, good resistance tolerance, and resistance Temperature coefficient and instantaneous load.

Test example 3: Comparison of resistance efficiency with different filler types

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer

Except for the different types of fillers shown in Table 5, the other conditions are the same for each group. The description is as follows: The formula of the sintering aid for the buffer layer of each group is the same as that of Example 3-5 and Example 3-6: B ₂ O ₃ The contents are all 25.67 mol%, the BaO contents are all 4.48 mol%, the ZnO contents are all 28.48 mol%, the SiO ₂ contents are all 33.93 mol%, the Al ₂ O ₃ contents are all 6.02 mol%, and the V ₂ O ₅ contents are all It is 1.40mol%.

The first resin of each group is ethyl cellulose, the first organic solvent is terpineol, and the ratio of the composition for the buffer layer is the same as that of Example 3-5 and Example 3-6: Using sintering aid for buffer layer The total weight of the filler, the first resin and the first organic solvent is based on the total weight of the sintering aid for the buffer layer is 38.40 weight percent; the filler content is 25.60 weight percent; the first resin content is 1.5 weight percent; and The content of an organic solvent is 34.50 weight percent.

(2) Resistance paste: same as test example 1.

(3) Sintering temperature: same as Test Example 1.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 6.

Example 3-5, Example 3-6, Example 5-1 to Example 5-6 are filled with aluminum oxide, zinc oxide, silicon oxide and titanium oxide, respectively, and the deformation of the resistance layer is low. Less than 5%, and the adhesion is in the 0th grade, and exhibits low resistance, good resistance tolerance, resistance temperature coefficient and instantaneous load.

Test example 4: Comparison of resistance efficiency without buffer layer

(1) In the comparative examples of this test, none of the buffer layers are printed, and the weight percentages of the sintering aids for different resistance layers are used, and the rest of the steps are the same.

(2) The formula of the resistor paste is shown in Table 7. The formula of the sintering aid for the resistor layer is the same as that of Test Example 1, the second resin is ethyl cellulose, and the second organic solvent is terpineol.

(3) Sintering temperature: same as Test Example 1.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 8.

It can be seen from Table 8 that when the resistor is not provided with a buffer layer (ie Comparative Example 6-1 and Comparative Example 6-2), and the content of the sintering aid for the resistor layer is 4% by weight, the adhesion test result is obviously poor, only There is level 3 or level 4.

Furthermore, under the same condition that the buffer layer is not provided, when the content of the sintering aid for increasing the resistance layer of Comparative Example 6-3 and Comparative Example 6-4 is 6 wt%, although the adhesion of the resistance layer can be improved, But it causes the resistance to increase by at least 3 times, the resistance tolerance by about 2 times, and the resistance temperature coefficient by about 2 times.

Finally, when the content of the sintering aid for the resistance layer of Comparative Example 6-5 and Comparative Example 6-6 reached 8% by weight, although the adhesion test result was good, there was a problem of excessive deformation of the appearance of the resistance layer, and subsequent follow-up could not be performed. test.

Test Example 5: Comparison of resistance efficiency by using different ratios of sintering aids for resistance layers

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer:

The sintering aids for each buffer layer are the same as in Examples 3-5 and 3-6: the _{content of B 2} O _{3 is} all 25.67 mol%, the content of BaO is all 4.48 mol%, the content of ZnO is all 28.48 mol%, SiO ₂ The contents are all 33.93 mol%, the Al ₂ O ₃ contents are all 6.02 mol%, and the V ₂ O ₅ contents are all 1.40 mol%.

In addition, the fillers are all Al ₂ O ₃ , the first resin is all ethyl cellulose, the first organic solvent is all terpineol, and the ratio of the composition for the buffer layer is the same as in Example 3-5 and Example 3-6 : Based on the total weight of the sintering aid for the buffer layer, filler, first resin and the first organic solvent, each group adopts the same ratio: the content of the sintering aid for the buffer layer is 38.40 weight percent; the content of the filler is 25.60 The content of the first resin is 1.5% by weight; and the content of the first organic solvent is 34.50% by weight.

(2) Resistance paste:

The formula of the sintering aid for each group of resistance layer is shown in Table 9. Based on the total weight of the metal powder, the resistance layer sintering aid, the second resin and the second organic solvent, each group adopts the same ratio: the content of copper is 43.80 weight percent; the content of nickel is 29.20 weight percent; the resistance layer is sintered The content of the agent is 4.00% by weight; the content of the second resin is 2.00% by weight; the content of the second organic solvent is 21.00% by weight; where the second resin is the same as the second resin, and the second organic solvent is the same as the first organic solvent .

(3) Sintering temperature: same as Test Example 1.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 10, where Ts is the glass softening point of the sintering aid for the resistance layer.

_{It can be seen from Table 10 that the B 2} O ₃ content in the sintering aid for the buffer layer of Examples 7-5 and 7-6 is 26.70 mol%, BaO content is 12.64 mol%, ZnO content is 15.39 mol%, and SiO _{When the} content of 2 is 42.36mol%, the content of Al ₂ O ₃ is 2.68mol%, and the content of V ₂ O ₅ is 0.22mol%, and the glass softening point is 690 ℃, the resistance layer has no deformation and the adhesion can reach the first level Or level 2.

Furthermore, compared with Example 7-5 and Example 7-6, the sintering aid for the buffer layer of Example 3-5, Example 3-6, Example 7-1 to Example 7-4 The content of B ₂ O _{3 is} between 27 mol% and 29.1 mol%, the content of BaO is between 10.1 mol% and 12.2 mol%, the content of ZnO is between 16.1 mol% and 19.9 mol%, and the _{content of SiO 2 is} between 37.2 mol% and 41.5. mol%, Al ₂ O ₃ content is between 2.73 mol% to 3 mol%, and V ₂ O ₅ content is between 0.28 mol% to 0.6 mol%, so it can have better adhesion (all belong to the 0th level), and more Demonstrates low resistance, good resistance tolerance, resistance temperature coefficient and instantaneous load.

Test Example 6: Comparison of the resistance effect of different copper-nickel ratios in the resistance layer

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer: the same as in Example 3-5 and Example 3-6.

(2) Resistance paste:

The formula of the sintering aid for each group of resistance layers is the same, and the same as in Example 3-5 and Example 3-6: _{the content of B 2} O ₃ is 28.09 mol%, the content of BaO is 11.20 mol%, and the content of ZnO is 17.98 mol%, SiO ₂ content is 39.43 mol%, Al ₂ O ₃ content is 2.86 mol%, and V ₂ O ₅ content is 0.44 mol%. The formula of the resistance paste is shown in Table 11, where the second resin is ethyl cellulose and the second organic solvent is terpineol.

(3) Sintering temperature: same as Test Example 1.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 12, where Ts is the glass softening point of the sintering aid for the resistance layer.

It can be seen from Table 12 that the resistance layers of Examples 3-5, 3-6, 8-1 to 8-8 are all without deformation and have proper adhesion.

Furthermore, from Example 3-5, Example 3-6, Example 8-5 to Example 8-8, when the weight ratio of copper and nickel is between 0.35:0.65 to 0.65:0.35, and the metal The total weight of the powder, the sintering aid for the resistance layer, the second resin and the second organic solvent is based on the total weight. When the content of the metal powder is 67% to 79% by weight, the resistance temperature coefficient of the resistance can be significantly improved.

Test Example 7: Comparison of the resistance efficiency of different sintering aids for different resistance layers

The resistors of each group were fabricated according to the method described in Example 2, but no protective layer was provided. Among them, the Ts point was measured before the start of the manufacturing process, and the deformation of the resistor layer was observed after the sintering was completed. The remaining function tests (ie, adhesion Force, resistivity, COV%, TCR and STOL) are all performed after the external electrode is electroplated, and further description is as follows:

(1) Composition for buffer layer: the same as in Example 3-5 and Example 3-6.

(2) Resistance paste:

The formula of the sintering aid for each group of resistance layers is the same, and the same as in Example 3-5 and Example 3-6: _{the content of B 2} O ₃ is 28.09 mol%, the content of BaO is 11.20 mol%, and the content of ZnO is 17.98 mol%, SiO ₂ content is 39.43 mol%, Al ₂ O ₃ content is 2.86 mol%, and V ₂ O ₅ content is 0.44 mol%. The formula of the resistance paste is shown in Table 13, where the second resin is ethyl cellulose and the second organic solvent is terpineol.

(3) Sintering temperature: same as Test Example 1.

(4) Efficacy test: Perform the same test method as described in Test Example 1, and record the test results in Table 14, where Ts is the glass softening point of the sintering aid for the resistance layer.

It can be seen from Table 14 that when the sintering aid for the resistance layer contained in Example 9-1 and Example 9-2 is 6 wt%, the resistance layer is not deformed and the adhesion can reach the 0th level. However, due to the fact that the resistance layer The increase of the glass composition results in a high resistivity, which exceeds 4x10 ^-5 Ω.cm.

The sintering aid for the resistance layer contained in Examples 9-7 and 9-8 is 2% by weight. Due to the low glass composition in the resistance layer, the adhesion between the resistance layer and the buffer layer is reduced (level 1 or Level 2).

It can be seen from the above that, based on the total weight of the metal powder, the sintering aid for the resistance layer, the second resin and the second organic solvent, when the content of the sintering aid for the resistance layer is between 2.5 wt% and 5.5 wt%, it can be more Further improve the adhesion between the resistance layer and the buffer layer, and can further increase the resistivity.

In summary, the present invention provides a buffer layer formed by using a sintering aid for retardation with a specific composition and content. In addition to the resistance layer, the buffer layer sandwiched between the substrate and the resistance layer can be used to raise the gap between it and the substrate. The adhesion force can further avoid the deformation of the resistance layer, so that the resistance exhibits good instantaneous load, resistance tolerance and resistance temperature coefficient.

1: resistance

10: Composite layered structure

20: Side electrode

30: protective layer

100: side

110: top surface

120: back electrode

130: substrate

131: Bottom

132: top surface

140: buffer layer

141: top surface

150: resistance layer

151: Top Surface

160: front electrode

161: top surface

Claims (15)

A sintering aid for a buffer layer, comprising a first borobarium zinc silicon aluminum vanadium series glass frit, and the first borobarium zinc silicon aluminum vanadium series glass frit includes B ₂ O ₃ , BaO, ZnO, SiO ₂ , and Al ₂ O ₃ and V ₂ O ₅ , and based on the total moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5 , the content of B 2} O ₃ is 14.01mol% to 34mol %, BaO content is 1.5mol% to 8.44mol%, ZnO content is 20.06mol% to 34.6mol%, SiO ₂ content is 23mol% to 49.11mol%, Al ₂ O ₃ content is 4.9mol% to 7.60 mol%, and _{the content of V 2} O ₅ is 0.77 mol% to 1.85 mol%. A resistor includes a composite layered structure and two side electrodes, the two side electrodes are respectively arranged on two opposite sides of the composite layered structure; and the composite layered structure sequentially includes a substrate, a buffer layer and a resistor Layer; wherein the buffer layer is formed of a composition for the buffer layer, and the composition for the buffer layer includes the sintering aid for the buffer layer as described in claim 1, a filler, a first resin and a first Organic solvents. The resistor according to claim 2, wherein the glass softening temperature of the first boro-barium-zinc-silico-alumina-vanadium-based glass frit is 586°C to 739°C. The resistor according to claim 2, wherein the average particle size of the first boro-barium-zinc-silica-aluminum-vanadium-based glass frit is 1 μm to 5 μm. The resistor according to claim 2, wherein the filler comprises any one or a combination of aluminum oxide, zinc oxide, silicon oxide, and titanium oxide. The resistor according to claim 2, wherein the weight ratio of the sintering aid for the buffer layer to the filler is 0.4:0.6 to 0.75:0.25. The resistor according to claim 2, wherein, in the composition for the buffer layer, based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, the buffer The content of the sintering aid for the layer is 25.6 wt% to 48 wt%; the content of the filler is 16 weight percent to 38.4 weight percent; the content of the first resin is 1 weight percent to 2 weight percent; and the content of the first organic solvent is 30 weight percent to 40 weight percent. The resistor according to claim 2, wherein the resistor layer is formed of a resistor paste, and the resistor paste includes a metal powder, a sintering aid for the resistor layer, a second resin, and a second organic solvent. The resistor according to claim 8, wherein the sintering aid for the resistance layer includes a second borobarium zinc silicon aluminum vanadium-based glass frit, and the second borobarium zinc silicon aluminum vanadium-based glass frit includes B ₂ O ₃ , BaO , ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O ₅ , and based on the total number of moles of _{B 2} O ₃ , BaO, ZnO, SiO ₂ , Al ₂ O ₃ and V ₂ O _{5 , B 2} O _{The content of 3} is 26.70 mol% to 29.1 mol%, the content of BaO is 10.1 mol% to 12.64 mol%, the content of ZnO is 15.39 mol% to 19.9 mol%, _{the content of SiO 2} is 37.2 mol% to 42.36 mol%, Al _{The content of 2} O ₃ is 2.68 mol% to 3 mol%, and _{the content of V 2} O ₅ is 0.22 mol% to 0.6 mol%. The resistor according to claim 9, wherein the glass softening temperature of the second boro-barium-zinc-silicon-aluminum-vanadium-based glass frit is 565°C to 690°C. The resistor according to claim 8, wherein the metal powder contains copper and nickel, and the weight ratio of copper and nickel is 0.35:0.65 to 0.8:0.2. The resistor according to claim 8, wherein, in the resistor paste, based on the total weight of the metal powder, the sintering aid for the resistor layer, the second resin, and the second organic solvent, the metal powder is The content is 67 wt% to 79 wt%; the content of the sintering aid for the resistance layer is 2 wt% to 6 wt%; the content of the second resin is 1 wt% to 3 wt%; and the second organic solvent The content is 17 weight percent to 25 weight percent. The resistor according to claim 8, wherein the average particle size of the metal powder is 0.3 μm to 10 μm. A method for making resistance, which includes the following steps: Step (a): forming a buffer layer on the surface of a substrate; step (b): forming a resistance layer on the surface of the buffer layer, wherein the buffer layer is sandwiched between the substrate and the resistance layer to obtain a Composite layered structure; step (c): arranging side electrodes on opposite sides of the composite layered structure to obtain a resistor blank; and step (d): sintering the resistor blank to obtain the resistor; wherein The buffer layer is formed of a composition for the buffer layer, and the composition for the buffer layer includes the sintering aid for the buffer layer as described in claim 1, a filler, a first resin, and a first organic solvent. The method according to claim 14, wherein the sintering temperature in step (d) is 880° C. to 920° C., and the sintering time is 10 minutes to 15 minutes.

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