TWI742175B - Light emitting diode - Google Patents

Abstract

A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first connection layer and a second current conducting layer is provided. The emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first connection layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first connection layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.

Description

Light-emitting diode

The present invention relates to a semiconductor device, and particularly relates to a light emitting diode.

Generally speaking, light-emitting diodes include light-emitting diodes used in vertical packaging and flip-chip packaging. The light-emitting diodes used in flip-chip packaging include a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first metal layer, a second metal layer, a first insulating layer, a first current conducting layer, and a second type semiconductor layer. The current conducting layer, the second insulating layer, the first bonding layer and the second bonding layer. The first type semiconductor layer has a first part and a second part. The light-emitting layer is disposed on the first part of the first-type semiconductor layer. The second part of the first-type semiconductor layer extends outward from the first part and protrudes out of the area of the light-emitting layer. The second-type semiconductor layer is disposed on the light-emitting layer. The first metal layer is disposed on the second part of the first type semiconductor layer and is electrically connected to the first type semiconductor layer. The second metal layer is disposed on the second-type semiconductor layer and is electrically connected to the second-type semiconductor layer. The first insulating layer covers the first metal layer and the second metal layer, and has a plurality of through openings respectively exposing the first metal layer and the second metal layer. The first current conduction layer and the second current conduction layer are disposed on the first insulating layer and filled in a plurality of through openings of the first insulating layer to be electrically connected to the first metal layer and the second metal layer, respectively. The second insulating layer covers the first current conduction layer and the second current conduction layer and has a plurality of through openings respectively overlapped with the first current conduction layer and the second current conduction layer. The first bonding layer and the second bonding layer are disposed on the second insulating layer and filled with a plurality of through openings to be electrically connected to the first current conducting layer and the second current conducting layer, respectively. The first bonding layer and the second bonding layer are used for eutectic bonding to an external circuit board. However, during the eutectic bonding process, the bonding material (for example: solder paste) easily penetrates into the light-emitting diode from the interface between the second insulating layer and the first bonding layer and/or the interface between the second insulating layer and the second bonding layer Part, which in turn causes a short circuit problem.

The invention provides a light-emitting diode with good performance.

A light emitting diode of the present invention includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first metal layer is located on the first type semiconductor layer and is electrically connected to the first type semiconductor layer. The first metal layer is located between the first current conducting layer and the first type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first type semiconductor layer through the first current conducting layer and the first metal layer. The first bonding layer has a through opening overlapping with the first metal layer. The second current conducting layer is electrically connected to the second type semiconductor layer.

Another light emitting diode of the present invention includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a Bragg reflective structure, a first metal layer, a first current conducting layer, a first insulating layer, and a first bonding layer And the second current conducting layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The Bragg reflection structure is disposed on the second-type semiconductor layer and overlaps the light-emitting layer. The first metal layer is located on the first type semiconductor layer and is electrically connected to the first type semiconductor layer. The Bragg reflection structure has a through opening, and the first metal layer is located in the through opening of the Bragg reflection structure. The first current conducting layer is disposed on the Bragg reflection structure and fills the through opening of the Bragg reflection structure to be electrically connected to the first metal layer. The first insulating layer is disposed on the first current conducting layer and has a through opening. The first bonding layer is disposed on the first insulating layer, and fills the through opening of the first insulating layer to be electrically connected to the first current conducting layer. The through opening of the Bragg reflection structure is misaligned with the through opening of the first insulating layer without overlapping. The second current conducting layer is electrically connected to the second type semiconductor layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a first insulating layer located between the first current conducting layer and the first metal layer and having a plurality of through openings, wherein the first current conducting layer is filled with The through opening of the first insulating layer is in electrical contact with the first metal layer, the area of the through opening of the first insulating layer is smaller than the area of the through opening of the first bonding layer, and the through opening of the first insulating layer is located in the first bonding layer It penetrates within the area of the opening.

In an embodiment of the present invention, the area of the aforementioned first bonding layer is smaller than the area of the first current conducting layer, and the first bonding layer is located within the area of the first current conducting layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second metal layer and a second bonding layer. The second metal layer is located on the second type semiconductor layer and is electrically connected to the second type semiconductor layer. The second current conducting layer is located between the second bonding layer and the second metal layer. The second bonding layer is electrically connected to the second type semiconductor layer through the second current conducting layer and the second metal layer.

In an embodiment of the present invention, the aforementioned second bonding layer has a plurality of through openings, and the through openings of the second bonding layer overlap with the second metal layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a first insulating layer located between the second current conducting layer and the second metal layer and having a plurality of through openings, wherein the second current conducting layer is filled with The through opening into the first insulating layer is electrically connected to the second metal layer, the area of the through opening of the first insulating layer is smaller than the area of the through opening of the second bonding layer, and the through opening of the first insulating layer is located in the second bonding layer. Within the area of the layer through the opening.

In an embodiment of the present invention, the aforementioned first metal layer includes a welding portion and a finger portion. The welding part is in electrical contact with the first current conducting layer. The finger extends from the welded portion to the outside of the first current conducting layer, wherein the finger overlaps with the second bonding layer.

In an embodiment of the present invention, the aforementioned first metal layer includes a welding portion and a finger portion. The welding part is in electrical contact with the first current conducting layer. The finger extends from the welding portion to the outside of the first current conducting layer, wherein the second bonding layer has a gap, and the finger extends to the area of the gap of the second bonding layer.

In an embodiment of the present invention, the above-mentioned first type semiconductor layer includes a first part and a second part. The light-emitting layer is placed on the first part. The second part extends outward from the first part and protrudes out of the area of the light-emitting layer. The second part of the first-type semiconductor layer has a first surface, a second surface opposite to the first surface, and a sidewall connected between the first surface and the second surface. The light emitting diode further includes a first insulating layer covering the sidewall of the second part of the first type semiconductor layer.

In an embodiment of the present invention, the above-mentioned first insulating layer further covers the second-type semiconductor layer and the first surface of the second portion of the first-type semiconductor layer, and the light emitting diode further includes a Bragg reflective structure, which is disposed on the first surface. On an insulating layer and overlapping with the light-emitting layer.

In an embodiment of the present invention, the above-mentioned Bragg reflection structure covers the sidewall of the second part of the first-type semiconductor layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second insulating layer. The Bragg reflection structure is located between the first insulating layer and the second insulating layer, and the second insulating layer covers the sidewall of the second part of the first type semiconductor layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a third insulating layer covering the first current conducting layer. The first bonding layer is disposed on the third insulating layer, and the third insulating layer covers the sidewall of the second part of the first type semiconductor layer.

In an embodiment of the present invention, the above-mentioned light-emitting layer has a first surface, a second surface and sidewalls. The second type semiconductor layer is disposed on the first surface of the light emitting layer, the second surface is opposite to the first surface, and the sidewall is connected between the first surface and the second surface. The light-emitting diode further includes a Bragg reflection structure. The first current conducting layer and the second current conducting layer are both located on the same side of the Bragg reflective structure. The Bragg reflection structure includes multiple first refraction layers and multiple second refraction layers, alternately stacked, wherein the refractive index of each first refraction layer is different from the refractive index of each second refraction layer, and the multiple first refraction layers and multiple The stacked structure of the second refraction layer covers the sidewall of the light-emitting layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a Bragg reflection structure. The first current conducting layer and the second current conducting layer are both located on the same side of the Bragg reflective structure. The Bragg reflection structure includes a plurality of first refraction layers and a plurality of second refraction layers, alternately stacked, wherein the refractive index of each first refraction layer is different from the refractive index of each second refraction layer, and the first refraction layer in the edge region of the Bragg reflection structure The stacking density of the first refractive layer and the second refractive layer is higher than the stacking density of the first refractive layer and the second refractive layer in the inner region of the Bragg reflective structure.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a Bragg reflection structure and a reflection structure. The first current conducting layer and the second current conducting layer are both located on the same side of the Bragg reflective structure. The reflective structure is located between the Bragg reflective structure and the first current conducting layer and between the Bragg reflective structure and the second current conducting layer, wherein the reflective structure is electrically isolated from the first current conducting layer and the second current conducting layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a first insulating layer and a second insulating layer. The first insulating layer covers the Bragg reflective structure, wherein the reflective structure is disposed on the first insulating layer. The second insulating layer covers the reflective structure, and the first bonding layer is disposed on the second insulating layer. The main function of the reflective structure is reflection. Although the reflective structure may include conductive materials, the reflective structure may not serve as a conductive path for transmitting electrical signals for driving the light-emitting diodes. The area of the reflective structure projected on the light-emitting diode is less than or equal to the area of the Bragg reflective structure on the light-emitting diode.

In an embodiment of the present invention, the above-mentioned reflective structure is directly disposed on the Bragg reflective structure to be in contact with the Bragg reflective structure, and the light emitting diode further includes a first insulating layer. The first insulating layer covers the reflective structure, and the first bonding layer is disposed on the first insulating layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a conductive layer disposed on the second type semiconductor layer, wherein the second current conducting layer is electrically connected to the second type semiconductor layer through the conductive layer, The conductive layer includes a plurality of conductive blocks, and the first metal layer separates the plurality of conductive blocks.

In an embodiment of the present invention, the aforementioned conductive block has a gap, and the first metal layer is located within the area of the gap.

In an embodiment of the present invention, the above-mentioned first metal layer includes a plurality of welding portions and a plurality of fingers. The plurality of welding parts are in electrical contact with the first current conducting layer. The plurality of fingers extend from the welding portion to the outside of the first current conducting layer, wherein each conductive block of the conductive layer is located between the plurality of fingers of the adjacent first metal layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a first insulating layer and a second insulating layer. The first insulating layer covers the Bragg reflective structure, wherein the reflective structure is disposed on the first insulating layer. The second insulating layer covers the reflective structure, and the first bonding layer is disposed on the second insulating layer.

In an embodiment of the present invention, the above-mentioned reflective structure is directly disposed on the Bragg reflective structure to be in contact with the Bragg reflective structure. The light emitting diode further includes a first insulating layer covering the reflective structure, wherein the first bonding layer is disposed on the first insulating layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a conductive layer disposed on the second type semiconductor layer, wherein the second current conducting layer is electrically connected to the second type semiconductor layer through the conductive layer, The conductive layer includes a plurality of conductive blocks, and the first metal layer separates the plurality of conductive blocks.

In an embodiment of the present invention, the aforementioned plurality of conductive blocks have gaps, and the first metal layer is located within the area of the gaps.

In an embodiment of the present invention, the above-mentioned first metal layer includes a plurality of welding portions and a plurality of fingers. The plurality of welding parts are in electrical contact with the first current conducting layer. The plurality of fingers extend from the welding portion to the outside of the first current conducting layer, wherein each conductive block of the conductive layer is located between the plurality of fingers of the adjacent first metal layer.

In an embodiment of the present invention, the above-mentioned second metal layer includes a plurality of welding portions and a plurality of fingers. The plurality of welding parts are in electrical contact with the second current conducting layer. The fingers extend from the welding portion to the outside of the second current conducting layer, wherein at least one finger of the second metal layer is provided in the area of each conductive block of the conductive layer.

In an embodiment of the present invention, the above-mentioned plurality of conductive blocks are separated from each other.

In an embodiment of the present invention, the above-mentioned plurality of conductive blocks are partially connected to each other.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a first insulating layer and bumps. The first insulating layer covers the second type semiconductor layer, wherein the first current conducting layer and the second current conducting layer are disposed on the first insulating layer. The bumps are arranged on a part of the first insulating layer on the second-type semiconductor layer. The bump is misaligned with the first current conducting layer and the second current conducting layer, and the ductility of the bump is higher than that of the first insulating layer. The bumps may include conductive or insulating materials, but the bumps may not serve as conductive paths for transmitting electrical signals for driving the light-emitting diodes. The projected area of the bump on the light-emitting diode is less than or equal to the projected area of the bump on the light-emitting diode.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a Bragg reflective structure, wherein the first current conducting layer and the second current conducting layer are both located on the same side of the Bragg reflective structure, and the bumps are arranged on the first On the stacked structure of the second type semiconductor layer, the Bragg reflective structure and the first insulating layer.

In an embodiment of the present invention, there is a gap between the first current conducting layer and the second current conducting layer, and the bump is located within the area of the gap.

In an embodiment of the present invention, the above-mentioned bumps, the first current conducting layer, and the second current conducting layer belong to the same film layer.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second bonding layer, wherein the second current conducting layer is located between the second bonding layer and the second type semiconductor layer, and the second bonding layer is formed by the second bonding layer. The two current conducting layers are electrically connected with the second type semiconductor layer, and the bumps are misaligned with the first bonding layer and the second bonding layer.

In an embodiment of the present invention, there is a gap between the above-mentioned first bonding layer and the second bonding layer, and the bump is located within the area of the gap.

In an embodiment of the present invention, the above-mentioned bumps, the first bonding layer, and the second bonding layer belong to the same film layer.

In an embodiment of the present invention, the above-mentioned bumps, the first bonding layer, and the second current conducting layer are electrically isolated.

In an embodiment of the present invention, the above-mentioned bump overlaps the mass center line of the light-emitting diode.

In an embodiment of the present invention, the aforementioned first metal layer includes a welding portion and a finger portion. The welding part is in electrical contact with the first current conducting layer. The finger extends from the welding part to the outside of the first current conducting layer. The width of the weld is greater than the width of the finger and the width of the weld is gradual.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second metal layer located between the second current conducting layer and the second type semiconductor layer, and the second current conducting layer is formed by the second metal layer and the first The type 2 semiconductor layer is electrically connected. The second metal layer includes welding parts and fingers. The welding part is in electrical contact with the second current conducting layer. The finger extends from the weld to the outside of the second current conducting layer, wherein the width of the weld is greater than the width of the finger and the width of the weld is gradual.

In an embodiment of the present invention, the width of the aforementioned welding portion gradually increases and then gradually decreases from the side close to the finger portion.

The present invention provides another light emitting diode, including a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a Bragg reflective structure, a first metal layer, a first current conducting layer, a first insulating layer, and a first bonding layer And the second current conducting layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The Bragg reflection structure is disposed on the second-type semiconductor layer and overlaps the light-emitting layer. The first metal layer is located on the first type semiconductor layer and is electrically connected to the first type semiconductor layer, wherein the Bragg reflective structure has a through opening, and the first metal layer is located in the through opening of the Bragg reflective structure. The first current conducting layer is disposed on the Bragg reflection structure and fills the through opening of the Bragg reflection structure to be electrically connected to the first metal layer. The first insulating layer is disposed on the first current conducting layer and has a through opening. The first bonding layer is disposed on the first insulating layer, and fills the through opening of the first insulating layer to be electrically connected to the first current conducting layer, wherein the through opening of the Bragg reflective structure is misaligned with the through opening of the first insulating layer. Do not overlap. The second current conducting layer is electrically connected to the second type semiconductor layer.

In an embodiment of the present invention, the width of the through opening of the above-mentioned first insulating layer is greater than the width of the through opening of the Bragg reflective structure.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second metal layer located on the second type semiconductor layer and electrically connected to the second type semiconductor layer, wherein the Bragg reflective structure has another through opening , At least part of the second metal layer is located in another through opening of the Bragg reflective structure, and the second current conducting layer is disposed on the Bragg reflective structure and fills the other through opening of the Bragg reflective structure to be electrically connected to the second metal layer connect.

In an embodiment of the present invention, the above-mentioned first insulating layer is disposed on the second current conducting layer and has another through opening, and the light emitting diode further includes a second bonding layer disposed on the first insulating layer, and The other through opening of the first insulating layer is filled to be electrically connected to the second current conducting layer, wherein the other through opening of the Bragg reflective structure is misaligned with the other through opening of the first insulating layer without overlapping.

In an embodiment of the present invention, the width of the other through opening of the aforementioned first insulating layer is greater than the width of the other through opening of the Bragg reflective structure.

In an embodiment of the present invention, the above-mentioned first current conduction layer includes a plurality of conductive parts separated from each other, wherein the second current conduction layer has a plurality of gaps, and the conductive part of the first current conduction layer is disposed on the second current conduction layer. Within the area of the gap of the conductive layer.

In an embodiment of the present invention, the above-mentioned first metal layer includes a plurality of welding parts spaced apart from each other, and each conductive part is in electrical contact with the plurality of welding parts.

In an embodiment of the present invention, the above-mentioned light emitting diode further includes a second bonding layer. The second bonding layer is disposed on the first insulating layer, and is filled into another through opening of the first insulating layer to be electrically connected to the second current conducting layer, wherein each conductive part has a position located between the first bonding layer and the second bonding layer The middle section between.

In an embodiment of the present invention, the width of the middle section of the aforementioned conductive part is greater than the width of the other middle section.

A method of manufacturing a light emitting diode according to an embodiment of the present invention includes the following steps: forming a plurality of light emitting units on a growth substrate, wherein each light emitting unit includes a first type semiconductor layer, a second type semiconductor layer, and a first type semiconductor layer. For the light-emitting layer between the second-type semiconductor layer and the second-type semiconductor layer, the growth substrate has a groove, and the sidewall of the first-type semiconductor layer of each light-emitting unit is aligned with the edge of the groove; the groove between the light-emitting unit and the growth substrate A first insulating layer is formed thereon, wherein the first insulating layer covers the sidewall of the first type semiconductor layer of each light-emitting unit and has a plurality of first through openings and a plurality of second through openings; forming a plurality of first current conducting layers and A plurality of second current conducting layers are respectively filled into the first through opening and the second through opening to electrically connect the plurality of first-type semiconductor layers and the plurality of second-type semiconductor layers of the light-emitting unit; and along the growth substrate The groove separates the growth substrate to form a plurality of light-emitting diodes.

In an embodiment of the present invention, the above-mentioned method of forming a light-emitting unit on a growth substrate includes: sequentially forming a first-type semiconductor material layer, a light-emitting material layer, and a second-type semiconductor material layer on the growth substrate; Type semiconductor material layer, light emitting material layer and second type semiconductor material layer to form a first type semiconductor material layer, a second type semiconductor layer and a light emitting layer having a first part and a second part, wherein the first part overlaps the light emitting layer, The second part extends outward from the first part to protrude beyond the area of the light-emitting layer; and the second part of the first-type semiconductor material layer and the growth substrate are cut to form the sidewalls of the first-type semiconductor layer and the recesses of the growth substrate groove.

In an embodiment of the present invention, the above-mentioned method of forming a light-emitting unit on a growth substrate further includes: forming a first sacrificial layer to cover the first-type semiconductor material layer and the second-type semiconductor layer having the first part and the second part. The first sacrificial layer is also cut when cutting the second part of the first-type semiconductor material layer and the growth substrate.

In an embodiment of the present invention, the method of forming a light-emitting unit on a growth substrate includes: sequentially forming a first-type semiconductor material layer, a light-emitting material layer, a second-type semiconductor material layer, and a first sacrificial material on the growth substrate Layer; patterning the second type semiconductor material layer, the light emitting material layer and the first sacrificial material layer to form the second type semiconductor layer, the light emitting layer and the first sacrificial layer, wherein the first type semiconductor material layer has an overlap with the light emitting layer A first part and a second part extending outward from the first part and protruding beyond the area of the light-emitting layer; and forming a second sacrificial layer to cover the first sacrificial layer and the second part of the first-type semiconductor material layer.

In an embodiment of the present invention, when cutting the second portion of the first-type semiconductor material layer and the growth substrate, the second sacrificial layer is further cut.

Based on the above, the light emitting diode of an embodiment of the present invention includes a first type semiconductor layer, a second type semiconductor layer, a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, and the first type semiconductor layer A first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer electrically connected to the second type semiconductor layer. In particular, the first bonding layer has a plurality of through openings, and the through openings of the first bonding layer overlap with the first metal layer. In other words, the first bonding layer and the first metal layer are misaligned, and there is a path between the first bonding layer and the first metal layer. Thereby, when the first bonding layer is used for bonding with the external circuit board, the bonding material (for example, solder paste) is not easy to completely flow through the path to cause a short circuit problem, so the performance of the light emitting diode is good.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.

FIG. 1A is a cross-sectional view of a light emitting diode according to an embodiment of the invention. Please refer to FIG. 1A. Specifically, FIG. 1A shows a horizontal light-emitting diode, which is a type of light-emitting diode that can be applied to a wire-bonding package. The light emitting diode 100 includes a first type semiconductor layer 110, a light emitting layer 120, a second type semiconductor layer 130, a first current conducting layer 140, a second current conducting layer 150, and a Bragg reflection structure 160. In this embodiment, one of the first-type semiconductor layer 110 and the second-type semiconductor layer 130 is an N-type semiconductor layer (for example, n-GaN), and the other is a P-type semiconductor layer (for example, p-GaN). ). The light-emitting layer 120 is located between the first-type semiconductor layer 110 and the second-type semiconductor layer 130, and the light-emitting layer 120 is used to emit a light beam L, wherein the light-emitting wavelength range of the light beam L has at least one peak wavelength. The first current conducting layer 140 is electrically connected to the first type semiconductor layer 110. The second current conducting layer 150 is electrically connected to the second type semiconductor layer 130. The first type semiconductor layer 110, the light emitting layer 120 and the second type semiconductor layer 130 are all located on the same side of the Bragg reflective structure 160. The reflectance of the Bragg reflective structure 160 in a reflection wavelength range covering at least 0.8X nm to 1.8X nm is over 90%, and the reflectance in a reflection wavelength range covering at least 0.9X nm to 1.6X nm is over 95% , Where X is the peak wavelength of the emission wavelength range.

In an embodiment, the light-emitting layer 120 may be a quantum well (QW) structure. In other embodiments, the light-emitting layer 120 may be a multiple quantum well structure (Multiple Quantum Well, MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barriers alternately arranged in a repetitive manner. Layer (Barrier). In addition, the constituent material of the light-emitting layer 120 includes a light beam L that can emit a peak wavelength falling in the light-emitting wavelength range of 320 nm to 430 nm (ultraviolet light), 430 nm to 500 nm (blue light), or 500 nm to 550 nm (green light). The composition of the compound semiconductor, the composition change or the structural design of the light-emitting layer 120 can change the light-emitting wavelength range of the light beam L, and the present invention is not limited thereto.

In detail, in this embodiment, the first type semiconductor layer 110 has a first portion P1 and a second portion P2. The light emitting layer 120 is stacked on the first portion P1. The second portion P2 extends outward from the first portion P1 and protrudes out of the area of the light-emitting layer 120 to be electrically connected to the first current conducting layer 140. The first type semiconductor layer 110 has a first surface 111 and a second surface 112 opposite to the first surface 111. The light emitting layer 120, the second type semiconductor layer 130, the first current conducting layer 140 and the second current conducting layer 150 are all located on the first surface 111 of the first type semiconductor layer 110. The Bragg reflective structure 160 is located on the second surface 112 of the first type semiconductor layer 110.

Specifically, the light emitting diode 100 of this embodiment further includes a growth substrate 170. The growth substrate 170 has a first surface 171 and a second surface 172 opposite to the first surface 171. The material of the growth substrate 170 is, for example, C-Plane, R-Plane or A-Plane sapphire substrate (Sapphire) or others Transparent material. In addition, a single crystal compound with a lattice constant close to that of the first-type semiconductor layer 110 is also suitable as a material for the growth substrate 170. The first-type semiconductor layer 110, the light-emitting layer 120 and the second-type semiconductor layer 130 of this embodiment are grown in sequence and stacked on the first surface 171 of the growth substrate 170. The Bragg reflective structure 160 is disposed on the second surface 172 of the growth substrate 170. In other embodiments, the light emitting diode 100 may not have the growth substrate 170, and the Bragg reflective structure 160 may be disposed on the second surface 112 of the first type semiconductor layer 110.

Generally speaking, the light beam L emitted by the light-emitting layer 120 is emitted in various directions, for example, the light beam L1 and the light beam L2 are emitted from the light-emitting layer 120 in different directions. However, when the light-emitting diode 100 is designed to use the light-emitting direction of the light beam L1 as the main light-emitting direction, the light beam L2 may not be able to be used to limit the luminous efficiency. Therefore, in this embodiment, the Bragg reflection structure 160 is used to reflect the light beam L2 traveling downward and guide the light beam L2 to be emitted above the growth substrate 170, that is, to form a reflected light beam L2'. In this way, the light emitted by the light-emitting layer 120 can be effectively emitted toward the predetermined light-emitting direction and has good light-emitting efficiency.

Specifically, the Bragg reflective structure 160 is mainly composed of at least one main stacked layer area, at least one transition stacked layer area, and at least one repair stacked layer area, wherein the main stacked layer area, the transition stacked layer area, and the repair stacked layer area Each includes a plurality of first refraction layers 162 and a plurality of second refraction layers 164, and the first refraction layers 162 and the second refraction layers 164 are alternately stacked. The refractive index of each first refractive layer 162 is different from the refractive index of each second refractive layer 164. The transitional stacked layer area can be located between two adjacent main stacked layer areas to increase the reflectivity of the two adjacent main stacked layer areas. The repaired stacked layer area is located at least on one side of the main stacked layer area to increase the main stacked layer area. The reflectivity of the region, and the structure to further increase the reflectivity of the Bragg reflection structure, wherein the transition stack region can be located between two adjacent repair stack regions, and the main stack region is located in the complement stack region and the adjacent two repair stacks The layer region is located between the two sides of the transitional stacked layer region to further increase the reflectivity of the adjacent two main stacked layer regions. In other words, the Bragg reflective structure 160 is composed of the first refraction layer 162 and the second refraction layer 164 alternately arranged to form a periodic structure, a partial periodic structure, a gradually increasing structure or a gradually decreasing structure, that is, at least one of the Bragg reflective structures 160 Two adjacent layers will have one being the first refractive layer 162 and the other being the second refractive layer 164. In an embodiment, the thickness of each of the first refraction layer 162 and the second refraction layer 164 is related to the reflection wavelength range of the material Bragg reflective structure 160. The structure of the main stacked layer area, the transition stacked layer area or the repair stacked layer area is composed of the first refraction layer 162 and the second refraction layer 164 alternately arranged, and may have the same periodic structure, different periodic structures, gradually increasing structures or gradual changes. Reduce the structure composition. The periodic structure, partial periodic structure, gradual increase structure or gradual decrease structure of the main stacked layer area is larger than the periodic structure, partial periodic structure, gradual increase structure or gradual change of the transition stacked layer area or the repaired stacked layer area To reduce the number of layers of the structure, the transitional stacked layer region includes at least one material contained in the two adjacent main stacked layer regions, and the material can be the same material or the same refractive material. In addition, the thicknesses of the first refraction layers 162 and the second refraction layers 164 may be the same or different from each other.

The material of the first refraction layer 162 in this embodiment includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), niobium pentoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or a combination thereof. On the other hand, the material of the second refractive layer 164 includes silicon dioxide (SiO2). By selecting the materials of the first refraction layer 162 and the second refraction layer 164, the probability of the light beam L2 being absorbed by the first refraction layer 162 and the second refraction layer 164 can be reduced, so as to increase the probability of the light beam L2 being reflected, thereby improving light emission. The luminous efficiency and brightness of the diode 100. In particular, in this embodiment, the Bragg reflective structure 160 has good reflectivity (above 95%) for different reflection wavelength ranges, making the light-emitting diode 100 suitable for use in light-emitting devices that need to emit different light-emitting wavelength ranges. . Specifically, if the first refraction layer 162 and the second refraction layer 164 next to each other are regarded as a stacked layer group, the Bragg reflection structure 160 applied to the light emitting diode 100 may include more than 4 to 100. The following or more stacked layer groups. In addition, the number of stacked layer groups can be adjusted according to the required reflection properties, and the present invention is not limited to this. For example, 30 to 50 stacked layer groups can be used to form the Bragg reflection structure 160.

If the light beam L provided by the light emitting diode 100 is ultraviolet light, the peak wavelength of the light emitting wavelength range may fall in the range of 320 nm to 430 nm. At this time, the material of the first refraction layer 162 in the Bragg reflective structure 160 may be a material containing tantalum (Ta), such as tantalum pentoxide (Ta2O5), and the material of the second refraction layer 164 may be silicon dioxide (SiO2). ), but not limited to this. For example, when the peak wavelength of the light-emitting wavelength range is 400 nm, this embodiment can adjust the material, thickness, and number of the refraction layer so that the Bragg reflection structure 160 covers at least 320 nm (0.8 times the peak wavelength). ) To 720nm (1.8 times the peak wavelength) reflection wavelength range can provide more than 90% reflectivity. In addition, in other preferred embodiments, when the peak wavelength of the emission wavelength range is 400 nm, the Bragg reflection structure 160 covers at least 360 nm (0.9 times the peak wavelength) to 560 nm (1.4 times the peak wavelength) reflection Can provide more than 95% reflectivity in the wavelength range.

1B is a reflection spectrum diagram of a Bragg reflection structure according to another embodiment of the present invention, wherein the horizontal axis of FIG. 1B is the wavelength and the vertical axis is the specific reflectance, and the specific reflectance means that the reflectance of the Bragg reflection structure is compared with that of aluminum. The reflectivity of the metal layer. In one embodiment, the Bragg reflection structure with the reflection spectrum of FIG. 1B uses Ta2O5 as the first refraction layer and SiO2 as the second reflection layer. In addition, each of the first refraction layer and the second refraction layer in the Bragg reflection structure has 30 layers, and the first refraction layer and the second refraction layer are repeatedly and alternately stacked to form the Bragg reflection structure. It can be seen from FIG. 1B that, compared with the aluminum metal layer, the Bragg reflective structure has a specific reflectivity higher than 100% in the wavelength range of about 350 nm to 450 nm. In this way, the light-emitting chip with the Bragg reflection structure can be applied to the ultraviolet light emitting device, and the light extraction efficiency of the ultraviolet light emitting device is improved.

Continuing to refer to FIG. 1A, if the light beam L provided by the light-emitting diode 100 is blue, the peak wavelength of the light-emitting wavelength range may fall in the range of 420 nm to 500 nm. At this time, the material of the first refraction layer 162 in the Bragg reflective structure 160 may be a material containing titanium (Ti), such as titanium dioxide (TiO2), and the material of the second refraction layer 164 may be silicon dioxide (SiO2), but Not limited to this. For example, when the peak wavelength of the light-emitting wavelength range is 450 nm, in this embodiment, the material, thickness, and number of laminated groups of the refractive layer can be adjusted so that the Bragg reflection structure 160 covers at least 360 nm (0.8 times the peak wavelength). ) To 810 nm (1.8 times the peak wavelength) reflection wavelength range can provide more than 90% reflectivity. In addition, in other embodiments, when the peak wavelength of the emission wavelength range is 450 nm, the Bragg reflection structure 160 can be in the reflection wavelength range covering 405 nm (approximately 0.9 times the peak wavelength) to 720 nm (approximately 1.6 times the peak wavelength). Provide more than 95% reflectivity.

If the light beam L provided by the light emitting diode 100 is blue light, and a wavelength conversion structure such as phosphor is contained in different packaging types, the light beam L provided by the light emitting diode 100 is blue light to excite another light through the wavelength conversion structure. The peak wavelength of the excitation wavelength, the peak wavelength of the other excitation wavelength is greater than the peak wavelength of the light beam L provided by the light emitting diode 100, so that the light beam contains at least one peak wavelength, and the peak wavelength of the emission wavelength and the excitation wavelength range can fall In 400 nm to 700 nm. At this time, the material of the first refraction layer 162 in the Bragg reflective structure 160 may be a material containing titanium (Ti), such as titanium dioxide (TiO2), and the material of the second refraction layer 164 may be silicon dioxide (SiO2), but Not limited to this.

For example, when the peak wavelength of at least one emission wavelength range is 445nm and the peak wavelength of the excitation wavelength is 580nm, or another excitation wavelength can be included with the peak wavelength of 620nm, this embodiment can be determined by the material, thickness and The adjustment of the number of laminated groups enables the Bragg reflective structure 160 to provide more than 90% reflectivity in the reflection wavelength range of at least 356nm (0.8 times the peak wavelength of the emission wavelength) to 801 nm (1.8 times the peak wavelength of the emission wavelength). . In addition, in other embodiments, when the peak wavelength of the emission wavelength range is 445 nm, the Bragg reflection structure 160 covers 400.5 nm (approximately 0.9 times the peak wavelength of the emission wavelength) to 712 nm (approximately 1.6 times the peak wavelength of the emission wavelength). Can provide more than 95% reflectance in the reflection wavelength range.

If the light beam L provided by the light emitting diode 100 is green light, the peak wavelength of the light emitting wavelength range may fall in the range of 500 nm to 550 nm. At this time, the material of the first refraction layer 162 in the Bragg reflective structure 160 may be a material containing titanium (Ti), such as titanium dioxide (TiO2), and the material of the second refraction layer 164 may be silicon dioxide (SiO2), but Not limited to this. For example, when the peak wavelength of the light-emitting wavelength range is 525 nm, in this embodiment, the material, thickness, and number of laminated groups of the refractive layer can be adjusted so that the Bragg reflection structure 160 covers at least 420 nm (0.8 times the peak wavelength). ) To 997.5 nm (1.9 times the peak wavelength) reflection wavelength range can provide more than 90% reflectivity. In addition, in other embodiments, when the peak wavelength of the emission wavelength range is 525 nm, the Bragg reflection structure 160 covers the reflection wavelength range of 472.5 nm (approximately 0.9 times the peak wavelength) to 840 nm (approximately 1.6 times the peak wavelength). Can provide more than 95% reflectivity.

FIG. 1C is a reflection spectrum diagram of a Bragg reflection structure according to another embodiment of the present invention, wherein the horizontal axis of FIG. 1C is the wavelength and the vertical axis is the reflectivity. In one embodiment, the Bragg reflection structure with the reflection spectrum of FIG. 1C uses TiO2 as the first refraction layer and SiO2 as the second reflection layer. In addition, each of the first refraction layer and the second refraction layer in the Bragg reflection structure has 24 layers, and the first refraction layer and the second refraction layer are repeatedly and alternately stacked to form the Bragg reflection structure. It can be seen from FIG. 1C that in the reflection spectrum of this Bragg reflection structure, the wavelength range from 400 nm to 700 nm has a reflectivity of more than 90%, and even the wavelength range from 400 nm to 600 nm is maintained at close to 100%. Since the reflection spectrum of the Bragg reflection structure maintains high reflectivity in a wide wavelength range, such a Bragg reflection structure can also provide a reflection effect in a wider wavelength range under a larger viewing angle.

The reflection spectrum of the Bragg reflection structure still has high reflectivity in the wavelength range slightly below 400nm and close to 400nm, and the reflection spectrum of the Bragg reflection structure still has high reflectivity in the wavelength range slightly higher than 700nm, even roughly at the wavelength range close to 800nm The wavelength range still has good reflectivity. In this way, the light-emitting chip with the Bragg reflection structure can be applied to a visible light-emitting device, thereby improving the light extraction efficiency of the visible light-emitting device. In addition, it can be seen from FIG. 1C that the Bragg reflection structure has a reflectivity of less than 40% in a longer wavelength range, such as 800 nm to 900 nm, or even above 900 nm. In this way, the manufacturability of the light-emitting chip with the Bragg reflection structure in both laser cutting and batching can be improved.

In this embodiment, when the light-emitting chip with the above Bragg reflection structure is applied to the light-emitting device, the light-emitting wavelength of the light-emitting layer in the light-emitting chip may only cover a part of the visible light wavelength range. In addition, the light-emitting device may further include phosphor, and the excitation light wavelength of the phosphor may cover another part of the visible light wavelength range. For example, the emission wavelength of the light emitting layer can be blue or green light, and the excitation light wavelength of the phosphor can be yellow light, green light, or red light. In this way, the light-emitting device can emit white light through the arrangement of the light-emitting chip and the phosphor, and the Bragg reflection structure in the light-emitting chip can efficiently reflect the wavelength range covered by the white light. In other words, in the light-emitting chip, the light-emitting wavelength of the light-emitting layer and the reflection wavelength of the Bragg reflective structure may only partially overlap, and do not need to be consistent with each other. Of course, in the light-emitting chip, the light-emitting wavelength of the light-emitting layer and the reflection wavelength of the Bragg reflection structure can also be designed to correspond to each other, for example, both fall in the blue wavelength range, both fall in the green wavelength range, or both fall in the red wavelength range. .

It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

FIG. 2 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. Please refer to FIG. 2. The light-emitting diode 100' shown in FIG. 2 is a light-emitting diode that can be applied to flip-chip packaging. The light-emitting diode 100' of this embodiment is similar to the light-emitting diode wafer 100 of FIG. The Bragg reflective structure 160' has a plurality of through openings 166. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 160' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment. In addition, the second current conducting layer 150 fills the through openings 166 to electrically connect to the second type semiconductor layer 130.

Specifically, in this embodiment, the light emitting diode 100' further includes a conductive layer 101 and a plurality of insulating patterns 103, wherein the insulating patterns 103 may not be connected to each other. The conductive layer 101 is disposed between the Bragg reflective structure 160' and the second-type semiconductor layer 130, and the second current conducting layer 150 filled with the through openings 166 can contact the conductive layer 101 and electrically connect to the first conductive layer 101 through the conductive layer 101. Type 2 semiconductor layer 130. The material of the conductive layer 101 is, for example, indium tin oxide (ITO) or other materials that have a current dispersion effect and can allow light to pass through, such as transparent metal, atomic stacking layer, etc.

On the other hand, these insulating patterns 103 are disposed between the conductive layer 101 and the second-type semiconductor layer 130, and part of the insulating patterns 103 are correspondingly disposed in the through openings 166 so that the conductive layer 101 contacts with the conductive layer 101 outside the area of the insulating pattern 103. The second type semiconductor layer 130. Furthermore, the material of the insulating patterns 103 is, for example, silicon dioxide (SiO2) or other materials with a current blocking effect. The conductive layer 101 and the insulating pattern 103 are arranged to uniformly disperse the current transmitted in the light-emitting layer 130, which can prevent the current from being concentrated in certain parts of the light-emitting layer 120, which makes the light-emitting area of the light-emitting layer 120 more evenly distributed. Therefore, the above configuration makes the light emission uniformity of the light emitting diode 100' better.

In this embodiment, since the light-emitting diode 100' is a flip-chip light-emitting diode, an insulating layer 105 and a bonding layer 107 can be further disposed on the second current conducting layer 150. The insulating layer 105 has a through opening O1, and the bonding layer 107 fills the through opening O1 so that the bonding layer 107 is electrically connected to the second current conducting layer 150. In order to electrically and physically connect with the external substrate during the flip chip bonding process, the materials of the bonding layer 107 and the first current conducting layer 140 are, for example, gold (Au), gold/tin alloy (Au/Sn) or other materials. Can be applied to conductive materials for eutectic bonding. Here, the first current conducting layer 140 can be directly used for eutectic bonding, but the present invention is not limited to this. In other embodiments, the first current conducting layer 140 and the second current conducting layer 150 may be made of the same material, and a bonding layer for eutectic bonding may be additionally provided on the first current conducting layer 140. The material of the insulating layer 150 is, for example, silicon dioxide (SiO2), titanium dioxide (TiO2) or other suitable materials.

In this embodiment, the specific design and material of the Bragg reflection structure 160' can be the same as the Bragg reflection structure 160' of the previous embodiment. Therefore, the Bragg reflective structure 160' has a good reflectivity in the short wavelength range, and the light emitting diode 100' is also suitable for application in light emitting devices that need to emit a short wavelength range.

FIG. 3 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. Please refer to FIG. 3. FIG. 3 shows another light-emitting diode that can be applied to flip-chip packaging. The light-emitting diode 200' of this embodiment is similar to the light-emitting diode 100' of FIG. The Bragg reflective structure 260' has a plurality of through openings 166 between the second current conducting layer 150 and the second type semiconductor layer 130, and a plurality of through openings 166 between the first current conducting layer 140 and the first type semiconductor layer 110. A piercing opening 167. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 260' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment. In addition, the second current conducting layer 150 fills the through openings 166 to electrically connect the second type semiconductor layer 130 and the first current conducting layer 140 fills the through openings 167 to electrically connect to the first type semiconductor layer 110. Although only one through opening 167 is shown in FIG. 3, in specific implementation, the number of through openings 167 can be adjusted according to the actual design.

Specifically, in this embodiment, the light emitting diode 200' further includes a conductive layer 101 and a plurality of insulating patterns 103, wherein the insulating patterns 103 may not be connected to each other. The conductive layer 101 is disposed between the Bragg reflective structure 260' and the second type semiconductor layer 130, and the second current conduction layer 150 filled with the through openings 166 can contact the conductive layer 101 and be electrically connected to the first through the conductive layer 101 Type 2 semiconductor layer 130. The material of the conductive layer 101 is, for example, indium tin oxide (ITO) or other materials that have a current dispersion effect and can allow light to pass through.

On the other hand, the insulating patterns 103 are disposed between the conductive layer 101 and the second-type semiconductor layer 130, and part of the insulating patterns 103 are correspondingly disposed at the positions of the through openings 166 so that the conductive layer 101 is outside the area of the insulating pattern 103 It is in contact with the second type semiconductor layer 130. Furthermore, the material of the insulating patterns 103 is, for example, silicon dioxide (SiO2) or other materials with a current blocking effect. The conductive layer 101 and the insulating pattern 103 are arranged to uniformly disperse the current transmitted in the light-emitting layer 130, which can prevent the current from being concentrated in certain parts of the light-emitting layer 120, which makes the light-emitting area of the light-emitting layer 120 more evenly distributed. Therefore, the above configuration makes the light emission uniformity of the light emitting diode 200' better.

In addition, in this embodiment, the light-emitting diode 200' further includes at least one first metal layer 180 located between the first current conducting layer 140 and the first type semiconductor layer 110, and at least one first metal layer 180 located between the second current conducting layer 150 and the second current conducting layer 150. At least one second metal layer 190 between the second type semiconductor layers 130 and a part of the Bragg reflective structure 260 ′ are located on the first metal layer 180 or the second metal layer 190. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 260' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment. Moreover, the first current conducting layer 140 fills the through openings 167 to electrically connect the first metal layer 180 with the first type semiconductor layer 110 and the second current conducting layer 150 fills the through openings 166 to electrically connect to the second metal. Layer 190 and the second type semiconductor layer 130.

In this embodiment, on the other hand, the light emitting diode 200' further includes a first insulating layer 105a and a second insulating layer 105b. The first insulating layer 105a is disposed on the first type semiconductor layer 110, the second type semiconductor layer 130, and the sidewalls of the first type semiconductor layer 110, the light emitting layer 120, and the second type semiconductor layer 130, and the first insulating layer 105a It can be further configured on a portion of the first metal layer 180, a portion of the second metal layer 190, and on the conductive layer 101, wherein at least a portion of the Bragg reflective structure 260' is located between the first insulating layer 105a and the second insulating layer 105b. Furthermore, the second insulating layer 105b may be disposed on the Bragg reflective structure 260'. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 260' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment, and these pass through openings 166 penetrates the second insulating layer 105b, the Bragg reflective structure 260', and the first insulating layer 105a for the second current conducting layer 150 to fill the through openings 166 and electrically connect the second metal layer 190 and the second type semiconductor layer 130. Similarly, the through openings 167 penetrate through the second insulating layer 105b, the Bragg reflective structure 260', and the first insulating layer 105a for the first current conducting layer 140 to fill the through openings 167 and electrically connect the first metal layer 180 and the first insulating layer. A type semiconductor layer 110. The material of the first insulating layer 105a and the second insulating layer 105b is, for example, silicon dioxide (SiO2), titanium dioxide (TiO2) or the same material or the same refractive material. In addition, the material of the first insulating layer 105a and the second insulating layer 105b may further include a material included in the Bragg reflective structure 260'.

In this embodiment, in order to electrically and physically connect with the external substrate during the flip chip bonding process, the materials of the first current conducting layer 140 and the second current conducting layer 150 are, for example, gold/tin alloy (Au/Sn ) Or other conductive materials that can be applied to eutectic bonding. Here, the first current conducting layer 140 and the second current conducting layer 150 can be directly used for eutectic bonding, but the invention is not limited to this. In other embodiments, the first current conducting layer 140 and the second current conducting layer 150 may be made of the same material.

4 is a cross-sectional view of a light emitting diode according to still another embodiment of the invention. Please refer to FIG. 4. FIG. 4 shows another light-emitting diode that can be applied to flip-chip packaging. The light-emitting diode 300' of this embodiment is similar to the light-emitting diode 200' of FIG. 3. The main difference is, for example, the light-emitting diode 300' further includes a first insulating layer 105a and a second insulating layer. 105b and the Bragg reflective structure 360' are disposed between the first insulating layer 105a and the second insulating layer 105b, wherein the first insulating layer 105a and the second insulating layer 105b may partially overlap and contact each other. The first insulating layer 105a is disposed on the first type semiconductor layer 110, the second type semiconductor layer 130, and the sidewalls of the first type semiconductor layer 110, the light emitting layer 120, and the second type semiconductor layer 130, and the first insulating layer 105a It can be further configured on a portion of the first metal layer 180, a portion of the second metal layer 190, and on the conductive layer 101, wherein the Bragg reflective structure 360' is located between the first insulating layer 105a and a second insulating layer 105b. Furthermore, the second insulating layer 105b can be disposed on the Bragg reflective structure 360', on the first insulating layer 105a, on a part of the first metal layer 180, and on a part of the second metal layer 190, wherein the second insulating layer 105b can further include Covering Bragg reflection structure 360'. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 360' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment. In addition, the through openings 166 penetrate the second insulating layer 105b and the first insulating layer 105a for the second current conducting layer 150 to fill the through openings 166 and electrically connect the second metal layer 190 and the second type semiconductor layer 130. Similarly, the through openings 167 penetrate the second insulating layer 105b and the first insulating layer 105a for the first current conducting layer 140 to fill the through openings 167 and electrically connect the first metal layer 180 and the first type semiconductor layer 110. The material of the first insulating layer 105a and the second insulating layer 105b is, for example, silicon dioxide (SiO2) or the material can be the same material or the same refractive material. In addition, the material of the first insulating layer 105a or the second insulating layer 105b may further include a material included in the Bragg reflective structure 360'.

FIG. 5 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. Please refer to FIG. 5. FIG. 5 shows another light-emitting diode that can be applied to flip-chip packaging. The light-emitting diode 400' of this embodiment is similar to the light-emitting diode chip 300' of FIG. The metal layer 190 includes a welding portion 190a and a finger portion 190b, wherein the first insulating layer 105a and the second insulating layer 105b may partially overlap and contact each other. The first insulating layer 105 a is disposed on the first type semiconductor layer 110, the second type semiconductor layer 130, and the sidewalls of the first type semiconductor layer 110, the light emitting layer 120 and the second type semiconductor layer 130. In addition, the first insulating layer 105a is disposed on a portion of the first metal layer 180, a portion of the second metal layer 190, and on the conductive layer 101, and the first insulating layer 105 is disposed on a portion of the welding portion 180a of the first metal layer 180 and On the finger 180a of the first metal layer 180. The partial Bragg reflective structure 360' is located between the first insulating layer 105a and a second insulating layer 105b. Furthermore, the second insulating layer 105b can be disposed on the Bragg reflective structure 360', on the first insulating layer 105a, on a part of the first metal layer 180, and on a part of the second metal layer 190, wherein the second insulating layer 105b can further include The Bragg reflective structure 360 ′ is covered and the second insulating layer 105 b is disposed on a part of the welding portion 180 a of the first metal layer 180 and on the finger portion 180 a of the first metal layer 180. In other words, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, and the Bragg reflective structure 360' are sequentially stacked on the first surface 171 of the growth substrate 170 in this embodiment, and these pass through openings 166 penetrates the second insulating layer 105b and the first insulating layer 105a for the second current conducting layer 150 to fill the through openings 166 and electrically connect the soldering portion 190a of the second metal layer 190 and the second type semiconductor layer 130. The through openings 167 penetrate through the second insulating layer 105b and the first insulating layer 105a for the first current conducting layer 140 to fill the through openings 167 and electrically connect the welding portion 180a of the first metal layer 180 and the first type semiconductor layer 110 . The material of the first insulating layer 105a and the second insulating layer 105b is, for example, silicon dioxide (SiO2) or the material can be the same material or the same refractive material. In addition, the material of the first insulating layer 105a or the second insulating layer 105b may further include a material included in the Bragg reflective structure 360'.

FIG. 6 is a schematic cross-sectional view of a metal layer according to an embodiment of the invention. 6, the metal layer M has a top surface MT, a bottom surface MB, and a side surface MS. The side surface MS and the bottom surface MB form an included angle Θ, and the included angle Θ can be less than 60 degrees or less than 45 degrees. For example, the included angle θ may be 30 degrees to 45 degrees. The metal layer M may be applied to at least one of the first metal layer 180 and the second metal layer 190 of the foregoing embodiment.

Specifically, when the metal layer M is applied to the first metal layer 180 of FIG. 3, the area of the through opening 166 may be set to fall on the area of the top surface MT, and the side surface MS may be at least partially covered by the first insulating layer 105a. cover. At this time, because the included angle θ formed by the side surface MS and the bottom surface MB can be less than 60 degrees, the first insulating layer 105a can surely cover the side surface MS. In other words, the coating effect of the first insulating layer 105a covering part of the metal layer M is good. Similarly, the metal layer M can also provide similar effects when applied to the second metal layer 190 of FIG. 3 or applied to at least one of the first metal layer 180 and the second metal layer 190 of FIGS. 4 to 5.

FIG. 7 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 8 is a schematic cross-sectional view corresponding to the line A-B in Fig. 7. Fig. 9 is a schematic cross-sectional view corresponding to the line B-C in Fig. 7. Fig. 10 is a schematic cross-sectional view corresponding to the line C-D in Fig. 7. Fig. 11 is a schematic cross-sectional view corresponding to the line E-F in Fig. 7. Fig. 12 is a schematic cross-sectional view corresponding to the line G-H in Fig. 7. In this embodiment, the light emitting diode 500 roughly includes a conductive layer 101, an insulating pattern 103, a first type semiconductor layer 110, a light emitting layer 120, a second type semiconductor layer 130, a first current conducting layer 140, and a second current conducting layer 140. The conductive layer 150, the Bragg reflective structure 560', the growth substrate 170, the first metal layer 180 and the second metal layer 190. Some of these components are not shown in FIG. 7, but are shown in the cross-sectional view corresponding to the line A-B, B-C, C-D, E-F, or G-H.

It can be seen from FIG. 7 that the first current conducting layer 140 and the second current conducting layer 150 of the light emitting diode 500 are disposed opposite to each other and separated from each other. The first current conducting layer 140 is approximately rectangular and the first current conducting layer 140 has a plurality of notches N140 on the side S140 facing the second current conducting layer 150. The notch N140 extends from the side S140 to the inside of the first current conducting layer 140, but does not penetrate the first current conducting layer 140. The second current conducting layer 150 is also approximately rectangular, and the second current conducting layer 150 has a plurality of notches N150 on the side S150 facing the first current conducting layer 140. The notch N150 extends from the side S150 to the inside of the second current conduction layer 150, but does not penetrate the second current conduction layer 150. The materials of the first current conducting layer 140 and the second current conducting layer 150 are, for example, gold (Au), gold/tin alloy (Au/Sn), or other conductive materials that can be applied to eutectic bonding. In other embodiments, the first current conduction layer 140 and the second current conduction layer 150 may be made of the same material, and the first current conduction layer 140 and the second current conduction layer 150 may be additionally provided for eutectic bonding.的连接层。 The bonding layer.

In this embodiment, the welding portion 180a of the first metal layer 180 overlaps the first current conducting layer 140, and the finger portion 180b of the first metal layer 180 extends from the welding portion 180a toward the second current conducting layer 190 and specifically extends Into the gap N150 of the second current conducting layer 150. It can be seen from FIG. 7 that the finger portion 180b and the second current conducting layer 150 do not overlap each other in the layout area. The welding portion 190a of the second metal layer 190 overlaps the second current conducting layer 150, and the finger portion 190b of the second metal layer 190 extends from the welding portion 190a toward the first current conducting layer 180 and specifically to the first current conducting layer. 140 in the gap N140.

It can be seen from FIG. 7 that the finger portion 190b and the first current conducting layer 140 do not overlap each other in the layout area. The contour of the conductive layer 101 surrounds the first metal layer 180 without overlapping with the first metal layer 180. The insulating pattern 103 is disposed corresponding to the second metal layer 190, and the contour of the insulating pattern 103 is substantially similar to the contour of the second metal layer 190. In addition, the outline of the Bragg reflective structure 560' exposes the welding portion 180a of the first metal layer 180 and the welding portion 190a of the second metal layer 190 correspondingly. In other words, the welding portion 180a of the first metal layer 180 and the welding portion 190a of the second metal layer 190 do not overlap with the Bragg reflective structure 560', which allows the welding portion 180a of the first metal layer 180 to be physically and electrically The first current conducting layer 140 is connected and the welding portion 190 a of the second metal layer 190 is physically and electrically connected to the second current conducting layer 150. However, the fingers 180b of the first metal layer 180 and the fingers 190b of the second metal layer 190 may overlap the Bragg reflective structure 560'.

It can be seen from FIGS. 7 and 8 that in the light emitting diode 500, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, the conductive layer 101, the Bragg reflective structure 560', and the second current conducting layer 150 are in accordance with The sequence is stacked on the growth substrate 170. In the stack structure of the first type semiconductor layer 110, the light emitting layer 120, and the second type semiconductor layer 130, the light emitting layer 120 and the second type semiconductor layer 130 are partially removed and the conductive layer 101 is correspondingly disconnected in this area. The first type semiconductor layer 110 is exposed. The first metal layer 180 is disposed on the exposed first type semiconductor layer 110. The first metal layer 180 depicted in FIG. 8 is a finger 180b, and the finger 180b corresponds to the position in the gap N150 of the second current conducting layer 150 and therefore does not overlap with the second current conducting layer 150. In addition, the Bragg reflection structure 560' overlaps the finger 180b.

It can be seen from FIGS. 7 and 9 that between the side S140 of the first current conducting layer 140 and the side S150 of the second current conducting layer 150, the first type semiconductor layer 110, the light emitting layer 120, and the second type semiconductor layer 130 The conductive layer 101 and the Bragg reflective structure 560' are continuously distributed, and these components are sequentially stacked on the growth substrate 170.

It can be seen from FIGS. 7 and 10 that at the gap N140 of the first current conducting layer 140, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, the insulating pattern 103, the conductive layer 101, and the second metal layer 190 and the Bragg reflective structure 560' are stacked on the growth substrate 170 in sequence. The contour of the insulating pattern 103 corresponds to the contour of the second metal layer 190 and the two overlap each other. Specifically, the second metal layer 190 in FIG. 10 is the finger portion 190b of the second metal layer 190, and the finger portion 190b corresponds to the position in the gap N140 of the first current conducting layer 140, and thus is not connected to the first current conducting layer 140. overlapping. In addition, the Bragg reflection structure 560' overlaps the finger 190b.

It can be seen from FIGS. 7 and 11 that in the light emitting diode 500, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, the conductive layer 101, the Bragg reflective structure 560' and the second current conducting layer 150 are in accordance with The sequence is stacked on the growth substrate 170. In the stacked structure of the first-type semiconductor layer 110, the light-emitting layer 120, and the second-type semiconductor layer 130, the light-emitting layer 120 and the second-type semiconductor layer 130 are partially removed, and the conductive layer 101 and the Bragg reflective structure 560' are also correspondingly removed. The disconnection in this area exposes the first type semiconductor layer 110. The first metal layer 180 is disposed on the exposed first-type semiconductor layer 110, and the first current conducting layer 140 is filled in the conductive layer 101 and the Bragg reflective structure 560' is disconnected to physically and electrically connect the first Metal layer 180. The welding portion 180a of the first metal layer 180 is shown in FIG. 11. Therefore, it can be seen from FIGS. 8 and 11 that the welding portion 180a of the first metal layer 180 directly contacts and is electrically connected to the first current conducting layer, and the finger portion 180b of the first metal layer 180 overlaps the Bragg reflective structure 560' and Do not allow any current conducting layers to overlap.

7 and 12, in the area where the second current conducting layer 150 is located, the first type semiconductor layer 110, the light emitting layer 120, the second type semiconductor layer 130, the insulating pattern 103, the conductive layer 101, and the second metal layer 190 And the Bragg reflective structure 560 ′ are sequentially stacked on the growth substrate 170. The contour of the insulating pattern 103 corresponds to the contour of the second metal layer 190 and the two overlap each other. Specifically, in FIG. 12, the welding portion 190a of the second metal layer 190 overlaps the second current conducting layer 150 and the Bragg reflective structure 560' is disconnected in the region corresponding to the welding portion 190a, so that the welding portion 190a of the second metal layer 190 The welding portion 190a is physically and electrically connected to the second current conducting layer 150. That is, the welding portion 190a of the second metal layer 190 does not overlap with the Bragg reflective structure 560'. In contrast, in FIG. 10, the fingers 190b of the second metal layer 190 overlap with the Bragg reflective structure 560', but the fingers 190b of the second metal layer 190 do not overlap any current conducting layer.

It can be seen from FIGS. 7 to 12 that both the first metal layer 180 and the second metal layer 190 include a part overlapping the Bragg reflective structure 560' and another part not overlapping the Bragg reflective structure 560'. Part of the metal layer (180 or 190) overlapping the Bragg reflective structure 560' will not overlap the current conducting layer. In this way, the light-emitting diode 500 can have a relatively uniform thickness, which helps to improve the yield when the light-emitting diode 500 is joined to other components. In addition, in FIGS. 7 to 12, the upper and lower sides of the Bragg reflective structure 560' may be additionally provided with a first insulating layer 105a and a second insulating layer 105b as shown in FIG. 4 or 5, instead of being limited to the Bragg reflective structure 560 'Directly contact the conductive layer 101, the first current conducting layer 140, the second current conducting layer 150, the first metal layer 180 (finger 180a) and the second metal layer 190 (finger 190a). In addition, the cross-sectional structure of the first metal layer 180 and the second metal layer 190 may have inclined sidewalls MS as shown in FIG. 6.

FIG. 13 is a schematic cross-sectional view of a Bragg reflection structure according to an embodiment of the present invention. Referring to FIG. 13, the Bragg reflective structure DBR1 is disposed between the first insulating layer I1 and the second insulating layer I2. The Bragg reflection structure DBR1 includes a plurality of first refraction layers 12 and a plurality of second refraction layers 14, and the first refraction layers 12 and the second refraction layers 14 are alternately stacked. The refractive index of each first refractive layer 12 is different from the refractive index of each second refractive layer 14. In this embodiment, the closer to the second insulating layer I2, the smaller the thickness of the first refraction layer 12 and the second refraction layer 14 are. That is to say, the stack density of the first refraction layer 12 and the second refraction layer 14 appears to be denser as they are closer to the second insulating layer I2, and sparse as they are closer to the first insulating layer I1. In this way, the Bragg reflective structure DBR1 is a structure in which the refractive layer density gradually increases from the first insulating layer I1 to the second insulating layer I2.

The material of the first refraction layer 12 in this embodiment includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), niobium pentoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or a combination thereof. On the other hand, the material of the second refractive layer 14 includes silicon dioxide (SiO2). In this embodiment, the material of the first insulating layer I1 and the second insulating layer I2 can also be silicon dioxide, but the materials of the second refractive layer 14, the first insulating layer I1 and the second insulating layer I2 are all silicon dioxide. In the case of silicon, the crystallinity and compactness of the second refractive layer 14 are smaller than those of the first insulating layer I1 and the second insulating layer I2. The material and thickness of the first refraction layer 12 and the second refraction layer 14 can adjust the reflection wavelength range of the Bragg reflection structure DBR1. Therefore, the Bragg reflection structure DBR1 of this embodiment adopts the first refraction layer 12 and the second refraction layer 14 with a gradient in thickness, which allows the Bragg reflection structure DBR1 to have a wider reflection wavelength range and is suitable for applications that require a wide wavelength range. In the end product of luminous effect.

For example, if the first refractive layer 12 is made of titanium dioxide (TiO2) and the second refractive layer 14 is made of silicon dioxide (SiO2), the Bragg reflection structure DBR1 with a gradient change in the thickness of the refractive layer can be applied to a visible light emitting device. The first refraction layer 12 is made of tantalum pentoxide (Ta2O5) and the second refraction layer 14 is made of silicon dioxide (SiO2). Then, the Bragg reflection structure DBR1 with a gradient change in the thickness of the refraction layer can be applied to an ultraviolet light emitting device. However, the above-mentioned materials and the application of the light-emitting device are for illustrative purposes only. In fact, when the Bragg reflector structure DBR1 is made of other materials, the application can be adjusted according to the reflection wavelength range it presents.

FIG. 14 is a schematic cross-sectional view of a Bragg reflection structure according to another embodiment of the present invention. Referring to FIG. 14, the Bragg reflective structure DBR2 is disposed between the first insulating layer I1 and the second insulating layer I2. The Bragg reflective structure DBR1 includes a plurality of first refraction layers 22 and a plurality of second refraction layers 24, and the first refraction layers 22 and the second refraction layers 24 are alternately stacked. The refractive index of each first refractive layer 22 is different from the refractive index of each second refractive layer 24. In this embodiment, the closer to the second insulating layer I2, the greater the thickness of the first refraction layer 22 and the second refraction layer 24. In other words, the stack density of the first refraction layer 22 and the second refraction layer 24 appears to be sparser the closer to the second insulating layer I2, and denser the closer to the first insulating layer I1. In this way, the Bragg reflection structure DBR2 is a structure in which the refractive layer density gradually decreases from the first insulating layer I1 to the second insulating layer I2.

The material and thickness of the first refraction layer 22 and the second refraction layer 24 can adjust the reflection wavelength range of the Bragg reflection structure DBR2. The material of the first refraction layer 22 includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), niobium pentoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or a combination thereof. On the other hand, the material of the second refractive layer 24 includes silicon dioxide (SiO2).

15 is a schematic cross-sectional view of a Bragg reflection structure according to still another embodiment of the present invention. Please refer to FIG. 15, the Bragg reflective structure DBR3 includes a main stack layer B1, B2, a transition stack layer C1, and a repair stack layer D1, D2. The main stack layer B1 is formed by alternately stacking the first refraction layer B12 and the second refraction layer B14 having a refractive index different from that of the first refraction layer B12. The main stack layer B2 is formed by alternately stacking the first refraction layer B22 and the second refraction layer B24 having a refractive index different from that of the first refraction layer B22. The transition stack layer C1 is formed by alternately stacking the third refractive layer C12 and the fourth refractive layer C14 with a refractive index different from the third refractive layer C12. The repair stacked layer D1 is formed by alternately stacking a fifth refractive layer D12 and a sixth refractive layer D14 with a refractive index different from that of the fifth refractive layer D12. The repair stacked layer D2 is formed by alternately stacking a fifth refractive layer D22 and a sixth refractive layer D24 having a refractive index different from that of the fifth refractive layer D22.

In this embodiment, the first refraction layer B12 and B22, the third refraction layer C12 and the fifth refraction layer D12 and D22 in the same Bragg reflection structure DBR3 may be the same material or different materials, and the materials may include Tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), niobium pentoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or a combination of the above. The second refraction layers B14 and B24, the fourth refraction layer C14, and the sixth refraction layers D14 and D24 in the same Bragg reflection structure DBR3 may be the same material or different materials, and the material may include silicon dioxide.

In addition, in the main stacked layer B1, each first refraction layer B12 has the same first thickness T1 and the second refraction layer B14 has the same first thickness T1. In the main stacked layer B2, each first refraction layer B22 has the same first thickness T2 and the second refraction layer B24 has the same first thickness T2. Also, the first thickness T1 is different from the second thickness T2. That is to say, a single main stack layer B1 or B2 is a refractive layer with an equal period stack, but the stack period of the refractive layer of different main stack layers is different. In this way, by stacking several main stacked layers B1 and B2 together, the Bragg reflection structure DBR3 can provide a wide range of reflection length.

In the transition stacked layer C1 between the main stacked layer B1 and the main stacked layer B2, the third refractive layer C12 and the fourth refractive layer C14 have a third thickness T3. The third thickness T3 may be an average value of the first thickness T1 and the second thickness T2. In other words, T3=1/2(T1+T2). However, the thickness of the third refraction layer C12 and the fourth refraction layer C14 may also be between the first thickness T1 and the second thickness T2, respectively.

In addition, the thickness of the fifth refraction layer D12 and the sixth refraction layer D14 in the repair stack layer D1 may be closer to the main stack layer B1, the closer to the first thickness T1. The thicknesses of the fifth refraction layer D22 and the sixth refraction layer D24 in the repair stack layer D2 may be closer to the second thickness T2 as they are closer to the main stack layer B2. In other words, the repair stacked layer D1 and the repair stacked layer D2 are stacked structures in which the thickness of the refractive layer is gradually changed. Also, the constituent material of the repair stack layer D1 may be related to the main stack layer B1 and the constituent material of the repair stack layer D2 may be related to the main stack layer B2.

FIG. 16 is a schematic cross-sectional view of a Bragg reflection structure according to another embodiment of the present invention. Referring to FIG. 16, the Bragg reflection structure DBR4 is similar to the aforementioned Bragg reflection structure DBR3, but the Bragg reflection structure DBR4 further includes a repair stack layer D3 and a repair stack layer D4. The repair stack layer D3 is located between the transition stack layer C1 and the main stack layer B1, and the repair stack layer D4 is located between the transition stack layer C1 and the main stack layer B2. The thickness of the refractive layer in the repair stacked layer D3 may be closer to the first thickness T1 as the closer the main stacked layer B1 is. The thickness of the refractive layer in the repair stack layer D4 may be closer to the second thickness T2 as it is closer to the main stack layer B2. Also, the constituent material of the repair stack layer D3 may be related to the main stack layer B1 and the constituent material of the repair stack layer D4 may be related to the main stack layer B2.

The Bragg reflection structures DBR1 to DBR4 of FIGS. 13 to 16 can be applied to any of the light-emitting diodes in FIGS. 1, 2, 3, 4, 5, and 7. That is to say, any of the Bragg reflection structures described in the foregoing embodiments can be implemented by using any one of the Bragg reflection structures DBR1 to DBR4 in FIGS. 13 to 16. When the Bragg reflective structure has a stacked structure with a gradual refractive layer thickness or a stack of multiple refractive layers with different thicknesses, the Bragg reflective structure can provide a wider reflection wavelength range.

FIG. 17 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 18 is a schematic cross-sectional view corresponding to the line A-B in Fig. 17. Fig. 19 is a schematic cross-sectional view corresponding to the line C-D in Fig. 17. Please refer to FIG. 17, FIG. 18, and FIG. 19, which illustrate a flip-chip package light emitting diode 600. Referring to FIGS. 17, 18 and 19, the light emitting diode 600 includes a first type semiconductor layer 110, a light emitting layer 120, a second type semiconductor layer 130, a first metal layer 180, a second metal layer 190, and a first current The conductive layer 140, the second current conductive layer 150, the first bonding layer 108 and the second bonding layer 109. The light emitting layer 120 is located between the first type semiconductor layer 110 and the second type semiconductor layer 130. The first metal layer 180 is located on the first type semiconductor layer 110 and is electrically connected to the first type semiconductor layer 110. The first metal layer 180 is located between the first current conducting layer 140 and the first type semiconductor layer 110. The first current conducting layer 140 is electrically connected to the first type semiconductor layer 110 through the first metal layer 180. The first current conducting layer 140 is located between the first bonding layer 108 and the first metal layer 180. The first bonding layer 108 is electrically connected to the first type semiconductor layer 110 through the first current conducting layer 140 and the first metal layer 180. The second metal layer 190 is located on the second type semiconductor layer 130 and is electrically connected to the second type semiconductor layer 130. The second metal layer 190 is located between the second current conducting layer 150 and the second type semiconductor layer 130. The second current conducting layer 150 is electrically connected to the second type semiconductor layer 130 through the second metal layer 190. The second current conducting layer 150 is located between the second bonding layer 109 and the second metal layer 190. The second bonding layer 109 is electrically connected to the second type semiconductor layer 130 through the second current conducting layer 150 and the second metal layer 190. Similar to some of the foregoing embodiments, the light emitting diode 600 further includes a second insulating layer 105b, a Bragg reflective structure 360', an insulating pattern 103, and an insulating layer 113.

It is worth noting that the first bonding layer 108 has a plurality of through openings 108a. From a top-view perspective (as shown in FIG. 17 ), the first metal layer 180 overlaps the first through opening 108 a of the first bonding layer 108. In other words, the physical part of the first metal layer 180 is misaligned with respect to the physical part of the first bonding layer 108. The area of the physical part of the first metal layer 180 and the area of the physical part of the first bonding layer 108 may selectively not overlap. For example, in this embodiment, the first metal layer 180 includes a welding part 180 a overlapping the first current conducting layer 140 and a finger 180 b extending from the welding part 180 a toward the second current conducting layer 150. In this embodiment, the second insulating layer 105b is disposed between the first current conducting layer 140 and the first metal layer 180, and the second insulating layer 105b has a through opening 105ba overlapping the welding portion 180a. The first current conducting layer 140 fills the through opening 105ba of the second insulating layer 105b to electrically contact the welding portion 180a of the first metal layer 180. Furthermore, the area of the through opening 105ba of the second insulating layer 105b is smaller than the area of the welding portion 180a of the first metal layer 180 and is located within the area of the welding portion 180a of the first metal layer 180. The area of the portion 180a is smaller than the area of the through opening 166 of the Bragg reflective structure 360' and is located within the area of the through opening 166 of the Bragg reflective structure 360'. The area of the through opening 166 of the Bragg reflective structure 360' is smaller than that of the first bonding layer 108 An area of the through opening 108a is located within the area of the first through opening 108a of the first bonding layer 108 (not shown).

Similarly, the second bonding layer 109 has a plurality of second through openings 109a. From a top view (as shown in FIG. 17), the second metal layer 190 overlaps the plurality of second through openings 109a of the second bonding layer 109. In other words, the physical part of the second metal layer 190 is misaligned with the physical part of the second bonding layer 109. The area of the physical part of the second metal layer 190 and the area of the physical part of the second bonding layer 109 may selectively not overlap. For example, in this embodiment, the second metal layer 190 includes a welding portion 190 a overlapping the second current conducting layer 150 and a finger portion 190 b extending from the welding portion 190 a toward the first current conducting layer 140. The second insulating layer 105b has a through opening 105bb overlapping the welding portion 190a of the second metal layer 190. The second current conducting layer 150 fills the through opening 105bb of the second insulating layer 105b to electrically contact the welding portion 190a of the second metal layer 190. Furthermore, the area of the penetrating opening 105bb of the second insulating layer 105b is smaller than the area of the welding portion 190a of the second metal layer 190 and is located within the area of the welding portion 190a of the second metal layer 190. The welding of the second metal layer 190 The area of the portion 190a is smaller than the area of the through opening 166 of the Bragg reflective structure 360' and is located within the area of the through opening 166 of the Bragg reflective structure 360'. The area of the through opening 166 of the Bragg reflective structure 360' is smaller than that of the second bonding layer 109 The area of the second through opening 109a is located within the area of the first through opening 109a of the second bonding layer 109 (not shown).

The first bonding layer 108 and the second bonding layer 109 are used to electrically connect with an external circuit board (not shown) during the flip chip bonding process. Since the physical part of the first bonding layer 108 is misaligned with the physical part of the first metal layer 180, the physical part of the second bonding layer 109 is misaligned with the physical part of the second metal layer 190 (that is, the first bonding layer 108 and the first There is a current conduction path S1 between the metal layers 180 and a current conduction path S2 between the second bonding layer 109 and the second metal layer 190. Therefore, during the flip chip bonding process, bonding materials (such as solder paste or Au-tin eutectic) is not easy to completely flow through path S1 and/or path S2, causing short circuit problems.

There is a gap G1 between the first current conducting layer 140 and the second current conducting layer 150 to be electrically isolated from each other. In detail, in this embodiment, the first current conducting layer 140 has opposite inner edges 140a and outer edges 140b. The inner edge 140a is closer to the second current conducting layer 150 than the outer edge 140b; the second current conducting layer 150 has opposite The inner edge 150a and the outer edge 150b of the inner edge 150a are closer to the first current conducting layer 140 than the outer edge 150b; the distance G1 between the first current conducting layer 140 and the second current conducting layer 150 may refer to the first current conducting layer 140 The distance between the inner edge 140a of the second current conducting layer 150 and the inner edge 150a of the second current conducting layer 150.

There is a gap G2 between the first bonding layer 108 and the second bonding layer 109 to be electrically isolated from each other. In detail, in this embodiment, the first bonding layer 108 has opposite inner edges 108b and outer edges 108c, the inner edge 108b is closer to the second bonding layer 109 than the outer edge 108c; the second bonding layer 109 has opposite inner edges 109b and the outer edge 109c, the inner edge 109b is closer to the first bonding layer 108 than the outer edge 109c; the distance G2 between the first bonding layer 108 and the second bonding layer 109 can refer to the inner edge 108b of the first bonding layer 108 and the second bonding layer The distance between the inner edges 109b of 109.

It is worth noting that in this embodiment, the gap G2 between the first bonding layer 108 and the second bonding layer 109 is greater than the gap G1 between the first current conducting layer 140 and the second current conducting layer 150. In addition, there is a gap G3 between the outer edge 108c of the first bonding layer 108 and the outer edge 140b of the first current conducting layer 140, and between the outer edge 109c of the second bonding layer 109 and the outer edge 150b of the second current conducting layer 150 There is a gap G4. In other words, as shown in FIG. 17, in this embodiment, the area of the first bonding layer 108 is smaller than the area of the first current conducting layer 140, and the first bonding layer 108 is located within the area of the first current conducting layer 140; The area of the bonding layer 109 is smaller than the area of the second current conducting layer 150, and the second bonding layer 109 is located within the area of the second current conducting layer 150. Therefore, during the flip chip bonding process, the bonding material (such as solder paste) is not easy to overflow from the first bonding layer 108 to the outside of the first current conducting layer 140, and it is not easy to overflow from the second bonding layer 109 to the second current conducting layer. 150 to avoid short circuit problems.

For example, in this embodiment, at least one of the first metal layer 180, the second metal layer 190, the first current conduction layer 140, and the second current conduction layer 150 may include stacked ohmic contact layers and reflective layers. , Barrier stacking layer and connection layer; the ohmic contact layer, for example, includes chromium (Cr), titanium (Ti) or a combination thereof, and the reflective layer, for example, includes aluminum (Al), aluminum alloy (Alloy Al), aluminum copper alloy (Alloy Al/Cu) ), silver (Ag), platinum (Pt) or a combination thereof, the barrier stack layer includes, for example, titanium (Ti), nickel (Ni), aluminum (Al), gold (Au), platinum (Pt) or a combination thereof, and the connection layer For example, it includes titanium (Ti), nickel (Ni), aluminum (Al), gold (Au), platinum (Pt), or a combination thereof. For example, in this embodiment, at least one of the first bonding layer 108 and the second bonding layer 109 may include a reflective layer, a barrier stack layer, and a soldering layer that are stacked; the material of the reflective layer is, for example, aluminum (Al). , Aluminum alloy (Alloy Al), aluminum-copper alloy (Alloy Al/Cu), titanium (Ti), nickel (Ni), platinum (Pt) or a combination thereof, the material for blocking the stacked layer is, for example, titanium (Ti), nickel ( Ni), aluminum (Al), gold (Au), platinum (Pt) or a combination thereof, the material of the solder layer is, for example, gold (Au), tin (Sn), gold-tin alloy, tin alloy, tin-silver-copper alloy or its combination combination.

Referring to FIGS. 17 and 19, in this embodiment, the fingers 180b of the first metal layer 180 can be covered by the Bragg reflective structure 360', and extend below the second current conducting layer 150 and the second bonding layer 109 to be in contact with The second current conducting layer 150 and the second bonding layer 109 partially overlap. However, the present invention is not limited to this. In other embodiments, the fingers 180b of the first metal layer 180 may not overlap with the second bonding layer 109. The following uses FIGS. 20 and 21 as examples.

FIG. 20 is a schematic top view of a light emitting diode according to another embodiment of the invention. Fig. 21 is a schematic cross-sectional view corresponding to the line C'-D' of Fig. 20. Please refer to FIG. 20 and FIG. 21, which illustrate a light emitting diode 600' that can be applied to flip-chip packaging. The light-emitting diode 600' of this embodiment is similar to the aforementioned light-emitting diode 600. The main difference between the two is: the inner edge 109b of the second bonding layer 109 of the light-emitting diode 600' has a gap 109d, and the gap 109d is formed by The inner edge 109b extends to the inside of the second bonding layer 109 but does not penetrate the second bonding layer 109. The fingers 180b of the first metal layer 180 can extend into the area of the gap 109d without overlapping with the second bonding layer 109. In short, in this embodiment, the fingers 180b of the first metal layer 180 and the second bonding layer 109 can be arranged in a staggered manner. In the flip chip bonding process, when the bonding material (for example: solder paste or Au-Sn eutectic) is bonded to the second bonding layer 109, the physical part of the second bonding layer 109 and the physical part of the first metal layer 180 are arranged in a misaligned manner. When the bonding material is reactively bonded to the second bonding layer 109, the first metal layer 180 will not be contacted, which may cause a short circuit problem.

FIG. 22 is a schematic diagram of a manufacturing process of a light-emitting diode according to an embodiment of the present invention. Please refer to FIG. 22. For example, in this embodiment, the manufacturing process of the light-emitting diode 700 (labeled in FIG. 24B) includes: forming a plurality of light-emitting units on a growth substrate, wherein each light-emitting unit includes a first type The semiconductor layer, the second type semiconductor layer, and the light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, the growth substrate has a groove, and the sidewalls of the first type semiconductor layer of each light emitting unit and the edge of the groove Slicing (step T110); forming an insulating pattern on the second type semiconductor layer (step T120); forming a conductive layer to cover the insulating pattern and the second type semiconductor layer (step T130); forming a first metal layer and a second metal Layer to be electrically connected to the first type semiconductor layer and the second type semiconductor layer respectively (step T140); forming a first insulating layer to cover the first metal layer, the second metal layer, the light-emitting unit and the groove of the growth substrate (Step T150); forming a Bragg reflective structure on the first insulating layer, wherein the Bragg reflective structure overlaps the light-emitting layer (step T160); forming a second insulating layer to cover the Bragg reflective structure and the first insulating layer, wherein the first insulating layer The layer and the second insulating layer have a plurality of through openings exposing the first metal layer and the second metal layer (step T170); forming a first current conducting layer and a second current conducting layer, the first current conducting layer and the second current conducting layer The layer fills the multiple through openings of the first insulating layer and the second insulating layer to be electrically connected to the first type semiconductor layer and the second type semiconductor layer respectively (step T180); An insulating layer is formed on the conductive layer, and the insulating layer has a plurality of through openings exposing the first current conductive layer and the second current conductive layer (step T190); the first bonding layer and the second bonding layer are formed, and the first bonding layer and the second bonding layer are formed. The bonding layer is filled into the through openings of the insulating layer to be electrically connected to the first current conducting layer and the second current conducting layer respectively (step T200); the growth substrate is separated along the groove of the growth substrate to form a plurality of light emitting diodes (Step T210). 23A to 24B are schematic cross-sectional views of a method of manufacturing a light-emitting diode according to an embodiment of the present invention, corresponding to the schematic view of the manufacturing process of the light-emitting diode of FIG. 22. The manufacturing method of the light-emitting diode 700 (labeled in FIG. 24B) according to an embodiment of the present invention will be described below through the combination of FIG. 22 and FIG. 23A to FIG. 24B.

Please refer to FIG. 22. First, step T110 is performed, that is, a plurality of light-emitting units are formed on the growth substrate. Each light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer, The light-emitting layer between the semiconductor layers, the growth substrate has a groove, and the sidewall of the first-type semiconductor layer of each light-emitting unit is aligned with the edge of the groove. In this embodiment, step T110 in FIG. 22 may correspond to FIGS. 23A to 23G. The following uses FIGS. 23A to 23G to illustrate a possible implementation method for completing step T110.

Referring to FIG. 23A, in this embodiment, first, a first-type semiconductor material layer 110' may be formed on the growth substrate 170, and a light-emitting material layer 120' may be formed on the first-type semiconductor material layer 110'. A second-type semiconductor material layer 130' is formed on 120'. Referring to FIG. 23B, next, a patterned photoresist PR1 is formed on the stacked structure of the first type semiconductor material layer 110', the light emitting material layer 120', and the second type semiconductor material layer 130'. For example, in this embodiment, the patterned photoresist PR1 can be formed using the yellow light lithography process, but the invention is not limited to this. Please refer to FIG. 23C. Next, using the patterned photoresist PR1 as a mask, the second-type semiconductor material layer 130', the luminescent material layer 120', and the first-type semiconductor material layer 110' are patterned to form a second-type semiconductor layer 130. The light-emitting layer 120 and the first-type semiconductor material layer 110' having a first portion P1 and a second portion P2, wherein the light-emitting layer 120 is stacked on the first portion P1 of the first-type semiconductor material layer 110', and the second portion P2 The first portion P1 extends outward and protrudes out of the area of the light-emitting layer 120. The thickness of the second portion P2 may be smaller than the thickness of the first portion P1. For example, in this embodiment, a dry etching process can be used to form the second type semiconductor layer 130, the light emitting layer 120, and the first type semiconductor material layer 110' having the first portion P1 and the second portion P2, but the present invention does not Limited by this. Please refer to FIG. 23D, and then, remove the patterned photoresist PR1.

Please refer to FIG. 23E. Next, a first sacrificial layer 210 is formed to cover the second-type semiconductor layer 120, the light-emitting layer 130, and the first-type semiconductor material layer 110. Please refer to FIGS. 23E and 23F, and then, as shown in FIG. 23F, the growth substrate 170, the second portion P2 of the first type semiconductor material layer 110', and the first sacrificial layer 210 located on the second portion P2 are subjected to a cutting process , To form a cutting mark Q. The dicing mark Q penetrates a portion of the first sacrificial layer 210 and the second portion P2 of the first type semiconductor material layer 110' to separate the first sacrificial layer 210 into a plurality of first sacrificial patterns 212 and to separate the first type semiconductor material The layer 110 ′ is separated into a plurality of first-type semiconductor layers 110. The plurality of first-type semiconductor layers 110, the plurality of light-emitting layers 120 and the plurality of second-type semiconductor layers 130 thereon may constitute a plurality of light-emitting units U. Each light emitting unit U includes a first type semiconductor layer 110, a second type semiconductor layer 130, and a light emitting layer 120 located between the first type semiconductor layer 110 and the second type semiconductor layer 130. It is worth noting that while the cut mark Q defines the first type semiconductor layer 110 of the plurality of light emitting units U, the cut mark Q also extends to the growth substrate 170, and a recess that does not penetrate the growth substrate 170 is formed on the growth substrate 170.槽173. Since the growth substrate 170 and the first-type semiconductor material layer 110' are cut in the same process, the sidewall 110a of the first-type semiconductor layer 110 of each light-emitting unit U is cut with the edge of the groove 173 of the growth substrate 170 together. The first type semiconductor layer 110 has a first surface 111 and a second surface 112 opposite to each other. The light emitting layer 120 and the second type semiconductor layer 130 are disposed on the first surface 112, and the sidewall 110a is connected to the first surface 111 and the second surface Between 112.

Please refer to FIG. 23G. Next, the first sacrificial pattern 212 is removed, and step T110 of FIG. 22 is completed. It is worth mentioning that in the process of forming the first-type semiconductor layer 110 of the plurality of light-emitting units U (that is, during the aforementioned cutting process), as shown in FIG. 23E, the first sacrificial layer 210 covers the first-type semiconductor material layer. The second portion P2 of 110', the second type semiconductor layer 130, and the sidewall 120a of the light-emitting layer 120, so the light-emitting unit U is not easily damaged (for example, contaminated by particles) and defects during its formation, which is helpful for subsequent formation The luminous efficiency of the light-emitting diode.

Please refer to FIG. 22. Next, step T120 is performed, that is, an insulating pattern is formed on the second-type semiconductor layer. In this embodiment, step T120 in FIG. 22 may correspond to FIG. 23H to FIG. 23K. The following uses FIG. 23H to FIG. 23K to illustrate a possible implementation method for completing step T120.

Referring to FIG. 23H, in this embodiment, an insulating material layer 103' may be formed on the light-emitting unit U. For example, evaporation, sputtering, or plasma-assisted chemical vapor deposition may be used to form the insulating material layer 103', but the present invention is not limited thereto. Please refer to FIG. 23I. Next, a patterned photoresist PR2 is formed on the insulating material layer 103' on the second-type semiconductor layer 130.

Please refer to FIG. 23J. Next, using the patterned photoresist PR2 as a mask, the insulating material layer 103' is patterned to form an insulating pattern 103. For example, wet or dry etching of the insulating material layer 103' can be used to form the insulating pattern 103, but the invention is not limited to this. Please refer to FIG. 23K. Then, the patterned photoresist PR2 is removed, and step T120 of FIG. 22 is completed. It should be noted that FIGS. 23H to 23K are only used to illustrate an implementable method for completing step T120, and the present invention is not limited to this. In other embodiments, other feasible methods may also be used, such as : Lift-off process. Specifically, after forming the patterned photoresist PR2 as a mask on the light-emitting unit U, the insulating material layer 103' is formed by evaporation, sputtering, or plasma-assisted chemical vapor deposition. Photoresist PR2. Next, a lift-off process is performed. Please refer to FIG. 23K to remove the patterned photoresist PR2, so as to remove the insulating material layer 103' covering it while removing the patterned photoresist PR2 to complete step T120. It will not be illustrated and explained one by one here.

Please refer to FIG. 22 and FIG. 23L. Then, step T130 is performed, that is, a conductive layer 101 is formed on the second-type semiconductor layer 130 to cover the insulating pattern 103. In this embodiment, the conductive layer 101 further covers a part of the second-type semiconductor layer 130 that is not covered by the insulating pattern 130 so as to be in electrical contact with the second-type semiconductor layer 130. Please refer to FIG. 22 and FIG. 23M. Then, step T140 is performed, that is, the first metal layer 180 and the second metal layer 190 are formed to be electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 130, respectively. In detail, in this embodiment, the first metal layer 180 may be formed on the first portion P1 of the first type semiconductor layer 110, and the first metal layer 180 may directly electrically contact the first type semiconductor layer 110; A second metal layer 190 is formed on the conductive layer 101 on the second type semiconductor layer 130, and the second metal layer 190 can be electrically connected to the second type semiconductor 130 through the conductive layer 101.

Please refer to FIG. 22 and FIG. 23N. Then, step T150 is performed, that is, the first insulating layer 105a is formed to cover the first metal layer 180, the second metal layer 190, the light-emitting unit U, and the groove 173 of the growth substrate 170. For example, in this embodiment, evaporation, sputtering, or plasma-assisted chemical vapor deposition may be used to form the first insulating layer 105a, but the invention is not limited thereto. In this embodiment, the first insulating layer 105a can fully cover the growth substrate 170 and the components thereon. It is worth noting that through the design of the groove 173 of the growth substrate 170, the first insulating layer 105a can also cover the sidewall 110a of the first type semiconductor layer 110. Thereby, the sidewall 110a of the first-type semiconductor layer 110 is not prone to be electrically connected to improper components in the subsequent light-emitting diode manufacturing process and/or eutectic bonding process, resulting in a short circuit problem.

Please refer to FIG. 22. Next, step T160 is performed, that is, a Bragg reflection structure is formed on the first insulating layer, where the Bragg reflection structure overlaps the light-emitting layer. In this embodiment, step T160 in FIG. 22 may correspond to FIGS. 23O to 23R. The following uses FIGS. 23O to 23R to illustrate a possible implementation method for completing step T160.

Referring to FIG. 23O, a sacrificial layer 220 is formed on the first insulating layer 105a. In this embodiment, the sacrificial layer 220 is, for example, a photoresist layer, but the invention is not limited thereto. Please refer to FIGS. 23O and 23P. Then, the sacrificial layer 220 is patterned to form a sacrificial pattern 222. In this embodiment, the process of patterning the sacrificial layer 220 may include lithography and etching processes, and the sacrificial pattern 222 may have an inverted trapezoidal structure, but the invention is not limited thereto. Fig. 25 is an enlarged schematic diagram of part R1 of Fig. 23Q. Please refer to FIGS. 23Q and 25. Next, a plurality of first refractive material layers 162' (shown in FIG. 25) and a plurality of alternately stacked layers are formed on the sacrificial pattern 222 and the first insulating layer 105a not covered by the sacrificial pattern 222 The second refractive material layer 164' (drawn in FIG. 25). The plurality of first refractive material layers 162' and the plurality of second refractive material layers 164' can be regarded as the Bragg reflective material stacked layer 360'' (shown in FIG. 25).

Fig. 26 is an enlarged schematic view of part R2 of Fig. 23R. Please refer to FIG. 23Q, FIG. 23R, FIG. 25, and FIG. 26, and then, the sacrificial pattern 222 is removed. When the sacrificial pattern 222 is removed, part of the first refractive material layer 162' and part of the second refractive material layer 164' formed on the sacrificial pattern 222 will be removed together, and part of the first refractive material layer formed on the first insulating layer 105a The material layer 162' and part of the second refractive material layer 164' will be retained. In this way, the plurality of first refractive material layers 162' and the plurality of second refractive material layers 164' can be patterned to form a patterned pattern formed by stacking a plurality of first refractive layers 162 and a plurality of second refractive layers 164 Structure (i.e. Bragg reflection structure 360').

The thickness T4 of the first insulating layer 105b is much larger than the thickness T5 of the first refraction layer 162 of one of the Bragg reflective structures 360' or the thickness T6 of the second refraction layer 164 of one layer. For example, 30×T5≦T4 and 30×T6≦T4, but the invention is not limited thereto. In short, in this embodiment, a lift-off process is used to pattern the stacked structure of the plurality of first refractive material layers 162' and the plurality of second refractive material layers 164' to form the Bragg reflection. Structure 360'. However, the present invention is not limited to this. In other embodiments, other appropriate methods (such as lithography and etching processes) may also be used to form the Bragg reflective structure 360'.

Please refer to FIG. 26. In this embodiment, since the Bragg reflection structure 360' is formed by a lift-off process, each refractive layer covers the next refractive layer. For example, the first first refraction layer 162 covers the first insulating layer 105a, the second type semiconductor layer 130 and the light emitting layer 120, and the first second refraction layer 164 covers the first first refraction layer 162. The second first refraction layer 162 covers the first second refraction layer 164, and so on. In addition, due to the Bragg reflective structure 360' formed by the lift-off process, in the normal direction z perpendicular to the first surface 171 of the growth substrate 170, the refractive layer stack density of the edge region 360'-1 of the Bragg reflective structure 360' will be The stacking density of the refractive layer is higher than that of the inner region 360'-2 of the Bragg reflective structure 360'.

The light emitting layer 120 has sidewalls 120a, a first surface 120b, and a second surface 120c. The second type semiconductor layer 130 is disposed on the first surface 120b of the light emitting layer 120. The second surface 120c is opposite to the first surface 120b, and the sidewall 120a is connected to Between the first surface 120b and the second surface 120c. Since each refraction layer of the Bragg reflective structure 360' is covered by the next refraction layer, not only is there a stack of multiple first refraction layers 162 and multiple second refraction layers 164 above the first surface 120b of the light-emitting layer 120 Structure, the sidewall 120a of the light-emitting layer 120 also has a stacked structure formed by a plurality of first refraction layers 162 and a plurality of second refraction layers 164. Thereby, the Bragg reflection structure 360' can not only reflect the light beam L3 emitted by the light-emitting layer 120 in the forward direction (for example, the direction parallel to the direction z), but also reflect the light beam L3 emitted by the light-emitting layer 120 in the lateral direction (for example: inclined to the direction z). The direction of the light beam L4), and then the light extraction efficiency of the subsequently formed light-emitting diode can be improved.

In addition, as shown in FIG. 23R, the Bragg reflective structure 360' can also be selectively filled in the groove 173 of the growth substrate 170. In this way, the sidewall 110a of the first type semiconductor layer 110 is not only covered by the first insulating layer 105a, but also covered by the insulating Bragg reflective structure 360', and further reduces the sidewall 110a of the first type semiconductor layer 110 for subsequent light emission. There is a chance that the diode is electrically connected to improper components during the manufacturing process and/or the eutectic bonding process, resulting in a short-term probability.

Please refer to FIG. 22. Next, proceed to step T170, which is to form a second insulating layer to cover the Bragg reflective structure and the first insulating layer, wherein the first insulating layer and the second insulating layer have exposed first and second metal layers Of multiple through openings. In this embodiment, step T170 in FIG. 22 may correspond to FIG. 23S to FIG. 23V. The following uses FIG. 23S to FIG. 23V to illustrate a possible implementation method of completing step T170.

Referring to FIG. 23S, an insulating material layer 105b' is formed on the first insulating layer 105a and the Bragg reflective structure 360'. Please refer to FIG. 23T. Next, a patterned photoresist PR3 is formed on the insulating material layer 105b'. Please refer to FIG. 23T and FIG. 23U. Then, using the patterned photoresist PR3 as a mask, dry or wet etching is used to pattern the insulating material layer 105b' to form the second insulating layer 105b. The second insulating layer 105b has a plurality of through openings 105ba and 105bb exposing the first metal layer 180 and the second metal layer 190, respectively. When the insulating material layer 105b' is patterned to form the second insulating layer 105b, the photoresist PR3 can be patterned as a mask, and the first insulating layer 105a is patterned so that the first insulating layer 105a has the first metal layer exposed separately The through openings 105aa and 105ab of 180 and the second metal layer 190 are formed. Please refer to FIG. 23V. Then, the patterned photoresist PR3 is removed, and step T170 is completed here.

Fig. 27 is an enlarged schematic view of part R3 of Fig. 23V. Please refer to FIG. 27. In this embodiment, the first metal layer 180 may have an ohmic contact layer 182, a reflective layer 184, and a connection layer 186 stacked, wherein the ohmic contact layer 182 is in electrical contact with the first type semiconductor layer 110. And the reflective layer 184 is located between the ohmic contact layer 182 and the connection layer 186. Although not shown in the figure, the second metal layer 190 may also have an ohmic contact layer, a reflective layer, and a connection layer stacked together, and the ohmic contact layer of the second metal layer 190 is in electrical contact with the second type semiconductor layer 130. When performing the step of FIG. 23U, when the through openings 105aa, 105ba (and through openings 105ab, 105bb) are etched in the first insulating layer 105a and the second insulating layer 105b, the reflective layer 184 is protected by the connecting layer 186, so the reflective layer 184 is not easy to damage. Thereby, the first metal layer 180 (and the second metal layer 190) can not only play a role of dispersing current, but also have a good reflection function, thereby improving the light extraction efficiency of the subsequently formed light-emitting diode.

Please refer to FIG. 22 and FIG. 23W, and then proceed to step T180, that is, forming a first current conducting layer 140 and a second current conducting layer 150, wherein the first current conducting layer 140 and the second current conducting layer 150 are filled with the first insulating layer The multiple through openings 105aa, 105ba, 105ab, and 105ba of 105a and the second insulating layer 105b are electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 120, respectively. In detail, in this embodiment, the first current conducting layer 140 can be electrically connected to the first type semiconductor layer 110 through the first metal layer 180, and the second current conducting layer 150 can be through the second metal layer 190 and the conductive layer. 101 is electrically connected to the second type semiconductor layer 130. Similar to the first metal layer 180 in FIG. 27, in this embodiment, the first current conducting layer 140 and the second current conducting layer 150 may also have an ohmic contact layer, a reflective layer, a blocking stack layer, and a connecting layer ( (Not shown), the first current conducting layer 140 and the second current conducting layer 150 also have a good reflection effect, and can also be referred to as a first reflective layer and a second reflective layer. The thickness of the ohmic contact layer can be adjusted in the range of 0-50 nm due to the reflectivity of the reflective layer.

Please refer to FIG. 22. Next, step T190 is performed, that is, an insulating layer is formed on the first current conducting layer and the second current conducting layer, and the insulating layer has a plurality of through openings exposing the first current conducting layer and the second current conducting layer. In this embodiment, step T190 in FIG. 22 may correspond to FIG. 23X to FIG. 23Z. The following uses FIG. 23X to FIG. 23Z to illustrate one possible method of completing step T190.

Referring to FIG. 23X, an insulating material layer 113' is formed on the first current conducting layer 140, the second current conducting layer 150, and a portion of the second insulating layer 105b. Please refer to FIG. 23Y. Next, a patterned photoresist layer PR4 is formed on the insulating material layer 113' using a yellow photolithography process. Please refer to FIG. 23Z. Next, using the patterned photoresist layer PR4 as a mask, dry or wet etching is used to pattern the insulating material layer 113' to form the insulating layer 113. The insulating layer 113 has a plurality of through openings 113 a and 113 b exposing the first current conducting layer 140 and the second current conducting layer 150. In this embodiment, the insulating layer 113 can also be filled into the groove 173 of the growth substrate 170 and cover the sidewall 110 a of the first-type semiconductor layer 110. At this point, step T190 is completed.

Please refer to FIG. 22, and then proceed to step T200, that is, the first bonding layer and the second bonding layer are formed. The current conducting layer is electrically connected. In this embodiment, step T200 in FIG. 22 may correspond to FIGS. 24A to 24B. The following uses FIGS. 24A to 24B to illustrate one possible method of completing step T200.

Please refer to FIG. 24A. In this embodiment, the photoresist layer PR4 can be patterned as a mask, and conductive materials are filled into the through openings 113a, 113b of the insulating layer 113 by evaporation or sputtering to form the first bonding layer 108 And the second bonding layer 109. The first bonding layer 108 and the second bonding layer 109 are electrically connected to the first current conducting layer 140 and the second current conducting layer 150, respectively. Please refer to FIG. 24B. Next, the patterned photoresist PR4 is removed. Here, step T200 is completed. After the patterned photoresist PR4 is removed, the position of the patterned photoresist PR4 is such that the second bonding layer 109 has a plurality of second through openings 109a and the first bonding layer 108 has a plurality of through openings 108a.

Please refer to FIGS. 22 and 24C. Then, step T210 is performed, that is, the growth substrate 170 is separated along the groove 173 of the growth substrate 170 to form a plurality of independent light-emitting diodes 700. For example, in this embodiment, the growth substrate 170 and the first insulating layer 105a, the Bragg reflective structure 360', and the second insulating layer in the groove 173 of the growth substrate 170 can be made along the groove 173 of the growth substrate 170 105b and the insulating layer 113 are disconnected, thereby forming a plurality of independent light emitting diodes 700. For example, in this embodiment, a laser or a cutter wheel can be used to cut and separate the growth substrate 170, but the present invention is not limited to this. In other embodiments, other appropriate methods can also be used to separate the growth substrate 170. A plurality of independent light emitting diodes 700 are formed. In this embodiment, the upper viewing angle structure of the individual light-emitting diode 700 may be similar to the light-emitting diode 600 of FIG. 17, and will not be repeated here.

FIG. 28 is a schematic diagram of a manufacturing process of a light emitting diode according to another embodiment of the present invention. The manufacturing process of the light-emitting diode of FIG. 28 is similar to the manufacturing process of the light-emitting diode of FIG. 22. The main difference between the two is that the manufacturing process of the light-emitting diode of FIG. 28 has more steps T172 and T174. 29A to 29G are schematic cross-sectional views of a part of a manufacturing method of a light-emitting diode according to another embodiment of the present invention. Figures 29A to 29G correspond to steps T172, S174, and T180 of Figure 28. In this embodiment, steps T110 to T170 before step T172 in FIG. 28 can refer to Figures 23A to 23S and their descriptions, and steps T190 to S210 after step T180 can refer to Figures 23X to 24C and their descriptions. The art has Generally, the knowledgeable person should be able to complete the light-emitting diode manufactured by the manufacturing process of FIG. 28 according to FIG. 28 and FIG. 29A to FIG. 29G and the subsequent description, and the same or similar steps will not be repeated here.

Referring to FIGS. 28 and 29A to 29B, after step T170 (ie forming the second insulating layer 105b) is completed, step T172 may be performed, that is, forming a reflective structure overlapping the Bragg reflective structure on the second insulating layer. Referring to FIG. 28, for example, in this embodiment, a patterned photoresist PR5 may be formed on the second insulating layer 105b, and the patterned photoresist PR5 covers the first metal layer 180 and the second metal layer 190. The second insulating layer 105b does not cover the second insulating layer 105b on the Bragg reflective structure 360'; then, a reflective material layer 192' is formed on the patterned photoresist PR5 and the second insulating layer 105b not covered by the patterned photoresist PR5 . Please refer to FIGS. 29A and 29B. Then, the patterned photoresist PR5 and the partially reflective material layer 192' thereon are removed to form a reflective structure 192. In this embodiment, the reflective structure 192 includes a reflective layer disposed on the second insulating layer 105b and an oxide layer (or, an adhesive layer) disposed on the reflective layer. The material of the reflective layer of the reflective structure includes, for example, aluminum (Al), aluminum alloy (Alloy Al), aluminum-copper alloy (Alloy Al/Cu), titanium (Ti), nickel (Ni), platinum (Pt), or a combination thereof. The material of the oxide layer of the reflective structure includes, for example, titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), platinum (Pt) or a combination thereof, or the insulating material is, for example, silicon dioxide (SiO2) or titanium dioxide ( TiO2). The reflective structure 192 uses the material properties of the reflective layer to reflect light. The reflective structure 192 can reflect the light beam passing through the Bragg reflective structure 360', thereby further improving the light extraction efficiency of the subsequently formed light-emitting diode. It can be seen from FIG. 29B that the projected area of the reflective structure 192 on the growth substrate 170 is less than or equal to the projected area of the Bragg reflective structure 360' on the growth substrate 170. The reflective structure 192 is disposed on the Bragg reflective structure 360' and the second insulating layer 105b, wherein the second insulating layer 105b covers the first type semiconductor layer 110, the second type semiconductor layer 130, the first type semiconductor layer 110, the second type semiconductor layer 110, and the second type semiconductor layer 110 of the light emitting unit. The sidewalls of the second type semiconductor layer 130 and the light emitting layer 120, the Bragg reflective structure 360' covers the first type semiconductor layer 110, the second type semiconductor layer 130, the first type semiconductor layer 110, the second type semiconductor layer 130 and the light emitting unit of the light emitting unit The sidewalls of the layer 120, the reflective structure 192 covers the sidewalls of the first type semiconductor layer 110, the second type semiconductor layer 130, the first type semiconductor layer 110, the second type semiconductor layer 130, and the light emitting layer 120 of the light emitting unit (not shown) .

Please refer to FIGS. 28 and 29C, and then proceed to step T172, that is, forming an insulating layer 114 to cover the reflective structure 192 and the second insulating layer 105b. The insulating layer 114 electrically isolates the reflective structure 192 from other conductive members of the light emitting diode (for example, the first current conducting layer 140 and the second current conducting layer 150 formed later). In this embodiment, the main function of the reflective structure 192 is reflection. Although the reflective structure 192 may include conductive materials, the reflective structure 192 may not serve as a conductive path for transmitting electrical signals for driving the light-emitting diodes.

Please refer to FIGS. 28 and 29D to 29G, and then proceed to step T180, that is, the first current conducting layer 140 and the second current conducting layer 150 are formed so that the first current conducting layer 140 and the second current conducting layer 150 are respectively The first-type semiconductor layer 110 and the second-type semiconductor layer 130 are electrically connected. Referring to FIG. 29D, in this embodiment, a patterned photoresist PR6 may be formed on the insulating layer 114, which exposes at least a portion of the insulating layer 114 corresponding to the first metal layer 180 and the second metal layer 190. Please refer to FIG. 29E. Next, using the patterned photoresist PR6 as a mask, the insulating layer 114, the second insulating layer 105b, and the first insulating layer 105a are patterned to form the penetrating insulating layer 114, the second insulating layer 105b, and the first insulating layer. An insulating layer 105a exposes a plurality of through openings 114a, 114b, 105ba, 105bb, 105aa, 105bb of the first metal layer 180 and the second metal layer 190. Please refer to FIGS. 29F and 29G, then, remove the patterned photoresist PR6, and form a first current conducting layer 140 and a second current conducting layer 150 on the insulating layer 114, the first current conducting layer 140 and the second current conducting layer The layer 150 is filled with a plurality of through openings 114a, 114b, 105ba, 105bb, 105aa, 105bb so as to pass through the first metal layer 180 and the second metal layer 190 to be electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 120, respectively. connect.

FIG. 30 is a schematic diagram of a manufacturing process of a light-emitting diode according to another embodiment of the present invention. The manufacturing process of the light-emitting diode of FIG. 30 is similar to the manufacturing process of the light-emitting diode of FIG. 22. The main difference between the two is that the manufacturing process of the light-emitting diode of FIG. And step T178. 31A to 31H are schematic cross-sectional views of a part of a manufacturing method of a light-emitting diode according to another embodiment of the present invention. FIGS. 31A to 31H correspond to steps T176, T178, and T180 of FIG. 30. In this embodiment, steps T110 to T160 before step T176 in FIG. 30 can refer to Figures 23A to 23R and their descriptions, and steps T190 to T210 after step T180 can refer to Figures 23X to 24C and their descriptions. The art has Generally, the knowledgeable person should be able to complete the light-emitting diode manufactured by the manufacturing process shown in FIG. 30 according to FIG. 30 and FIG. 31A to FIG. 31H and the subsequent description, and the same or similar steps will not be repeated here.

Referring to FIGS. 30 and 31A to 31C, after step T160 (that is, forming the Bragg reflection structure 360'), step T176 may be performed, that is, the reflection structure 192 is formed on the Bragg reflection structure 360'. Referring to FIG. 31A, for example, a patterned photoresist PR5 can be formed on the first insulating layer 105a. In this embodiment, the patterned photoresist PR5 can cover a portion of the first insulating layer 105a that is not covered by the Bragg reflective structure 360', while exposing the Bragg reflective structure 360'. Please refer to FIG. 31B. Next, evaporation, sputtering, or other appropriate methods may be used to form a reflective material layer 192', which covers the patterned photoresist PR5 and the Bragg reflective structure 360'. Please refer to FIG. 31C, and then remove the patterned photoresist PR5. When the patterned photoresist PR5 is removed, the partially reflective material layer 192' on the patterned photoresist layer PR5 will be removed at the same time, and the partially reflective material layer 192' on the Bragg reflective structure 360' will be retained to form a reflective structure 192. The reflective structure 192 can be directly disposed on the Bragg reflective structure 360' and in contact with the Bragg reflective structure 360'.

Please refer to FIG. 30 and FIG. 31D. Then, step T178 may be performed, that is, an insulating layer 114 is formed to cover the reflective structure 192 and the Bragg reflective structure 360'. In this embodiment, the insulating layer 114 further covers a part of the first insulating layer 105a that is not covered by the Bragg reflective structure 360'. Please refer to FIG. 30 and FIGS. 31E to 31H. Then, step T180 may be performed, that is, the first current conduction layer 140 and the second current conduction layer 150 are formed. The first current conduction layer 140 and the second current conduction layer 150 are respectively The first-type semiconductor layer 110 and the second-type semiconductor layer 130 are electrically connected. Referring to FIG. 31E, for example, a patterned photoresist PR6 can be formed on the insulating layer 114. 31F, then, using the patterned photoresist PR6 as a mask, the insulating layer 114 and the first insulating layer 105a are patterned to form the penetrating insulating layer 114 and the first insulating layer 105a and exposing the first metal layer 180 and the first metal layer 180 and the first insulating layer 105a. A plurality of through openings 114a, 114b, 105aa, 105ab of the second metal layer 190. Please refer to FIG. 31G and FIG. 31H. Then, the patterned photoresist PR6 is removed, and a first current conduction layer 140 and a second current conduction layer 150, a first current conduction layer 140 and a second current conduction layer are formed on the insulating layer 114 The layer 150 is filled with a plurality of through openings 114a, 114b, 105aa, 105ab to be electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 120, respectively.

32A to 32G are schematic cross-sectional views of a part of the manufacturing process of a light-emitting diode according to still another embodiment of the present invention. 32A to 32G show another possible implementation method for implementing the completion step T110 of FIG. 22, FIG. 28, or FIG. 23. The method of completing step T110 shown in FIGS. 32A to 32G is similar to the method of completing step T110 shown in FIGS. 23A to 23G. The main difference between the two is that in the process of completing step T110 shown in FIGS. 23A to 23G One sacrificial layer is formed, and two sacrificial layers are formed in the process of completing step T110 shown in FIGS. 32A to 32G. The following is an example in conjunction with FIGS. 32A to 32G.

Referring to FIG. 32A, a first type semiconductor material layer 110' is formed on the growth substrate 170. Next, a luminescent material layer 120' is formed on the first type semiconductor material layer 110'. Next, a second-type semiconductor material layer 130' is formed on the luminescent material layer 120'. Next, a first sacrificial material layer 210' is formed on the second type semiconductor material layer 130'. Please refer to FIGS. 32A and 32B. Next, a patterned photoresist PR7 is formed on the first sacrificial material layer 210'. Then, using the patterned photoresist PR7 as a mask, the first sacrificial material layer 210' is etched to form a first sacrificial patterned layer 210, wherein the first sacrificial patterned layer 210 exposes a portion of the second-type semiconductor material layer 130'.

Please refer to FIG. 32C, and then continue to use the patterned photoresist PR7 as a mask to etch the second type semiconductor material layer 130', the luminescent material layer 120' and the first type semiconductor material layer 110' to form the second type semiconductor layer 130, the light-emitting layer 120, and the first-type semiconductor material layer 110' having a first portion P1 and a second portion P2. Please refer to FIG. 32D. Next, the patterned photoresist PR7 is removed, and the first sacrificial pattern layer 210 is retained. The first sacrificial pattern layer 210 covers the second type semiconductor layer 130, but does not cover the second portion P2 of the first type semiconductor material layer 110'. Referring to FIG. 32E, next, a second sacrificial material layer 230' is formed to completely cover the first sacrificial pattern layer 210 and the second portion P2 of the first-type semiconductor material layer 110'.

Please refer to FIGS. 32E and 32F. Next, a cutting process is performed on the second sacrificial material layer 230', the first type semiconductor material layer 110', and the growth substrate 170 to form a cutting mark Q. The cutting mark Q penetrates the second sacrificial material layer 230' and the first type semiconductor material layer 110' to form a plurality of light emitting units U and a plurality of second sacrificial pattern layers 230 thereon. Each light-emitting unit U has a stacked structure in which the first-type semiconductor layer 110, the light-emitting layer 120, and the second-type semiconductor layer 130 are stacked. It is worth noting that the cutting mark Q also extends to the growth substrate 170, and a groove 173 that does not penetrate the growth substrate 170 is formed on the growth substrate 170. In other words, the thickness of the growth substrate 170 is thinner at the groove 173 and thicker at other places. Since the growth substrate 170 and the first-type semiconductor material layer 110' are cut in the same process, the sidewall 110a of the first-type semiconductor layer 110 of each light-emitting unit U will be aligned with the edge of the groove 173.

Referring to FIG. 32G, then, the first sacrificial pattern layer 210 and the second sacrificial pattern layer 230 are removed, and step T110 is completed here. It is worth mentioning that in the process of forming the plurality of first-type semiconductor layers 110 of the plurality of light-emitting units U (that is, during the aforementioned cutting process), the first sacrificial pattern layer 210 and the second sacrificial material layer 230' cover the light emitting Unit U, so the light-emitting unit U is not susceptible to damage (for example: polluted by particles), and contributes to the luminous efficiency of the subsequently formed light-emitting diode.

FIG. 33 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 34 is a schematic cross-sectional view corresponding to the line A1-B1 of FIG. 33. FIG. Fig. 35 is a schematic cross-sectional view corresponding to the line E-F in Fig. 33. Fig. 36 is a schematic cross-sectional view corresponding to the line G-H in Fig. 33. FIG. 37 is a schematic top view of the conductive layer, the first metal layer, and the second metal layer of the light-emitting diode of FIG. 33. FIG. Please refer to FIGS. 33 to 36, which illustrate a light emitting diode 600-1 that can be applied to flip-chip packaging. The light-emitting diode 600-1 of this embodiment is similar to the aforementioned light-emitting diode 600. The main difference between the two is: the conductive layer 101-1 of the light-emitting diode 600-1 and the conductive layer of the light-emitting diode 600 101 has different contours. The following mainly explains this difference, please refer to the above description for the same or similarities between the two.

Referring to FIGS. 33 to 36, the conductive layer 101-1 is located on the second type semiconductor layer 130 and is electrically connected to the second type semiconductor layer 130. The second current conducting layer 150 is electrically connected to the second type semiconductor layer 130 through the conductive layer 101-1. Please refer to FIG. 33 and FIG. 37. Unlike the light emitting diode 600, the conductive layer 101-1 of this embodiment includes a plurality of conductive regions 101a, and the first metal layer 180 is located in a region separated from the conductive regions 101a. middle. Furthermore, in this embodiment, the plurality of conductive blocks 101a can be separated from each other; that is, the conductive layer 101-1 can be broken into a plurality of conductive blocks 101a, and the plurality of conductive blocks 101a are not directly connected to each other.地连接。 Ground connection.

Please refer to FIGS. 33 to 37. For example, in this embodiment, the gap 101aa between two adjacent conductive blocks 101a may be provided with the second portion P2 of the first type semiconductor layer 110 and the first portion P2 thereon. Metal layer 180. Furthermore, in this embodiment, the finger 180b and the welding part 180a of the first metal layer 180 are located in the gap 101aa between two adjacent conductive blocks 101a. In this embodiment, the plurality of gaps 101aa may be selectively arranged as a plurality of straight lines, and the conductive layer 101-1 is divided into a plurality of rectangular conductive blocks 101-1. However, the present invention is not limited to this. In other embodiments, the plurality of gaps 101aa may also be arranged in other suitable ways, and the plurality of conductive blocks 101-1 of the conductive layer 101-1 may also have other suitable shapes.

Please refer to FIGS. 33 and 37. In this embodiment, the same conductive block 101a of the conductive layer 101-1 can overlap and be electrically connected to the plurality of solder portions 190a and at least one finger portion 190b of the second metal layer 190. The plurality of welding portions 190a in the second metal layer 190 are generally concentrated on one side, and the plurality of welding portions 180a in the first metal layer 180 are generally concentrated on one side and generally concentrated on the other side. The finger portion 190b in the second metal layer 190 extends from one of the welding portions 190a toward the side where the welding portion 180a is more concentrated, and the finger portion 180b in the first metal layer 180 extends from one of the welding portions 180a toward the welding portion 190a. Extend the concentrated side. By using the plurality of conductive blocks 101a separated from each other of the conductive layer 101-1, the current can be more uniformly dispersed in the light emitting diode 600-1, thereby improving the luminous efficiency of the light emitting diode 600-1.

FIG. 38 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 39 is a schematic cross-sectional view corresponding to the line L-M in Fig. 38. 40 is a schematic top view of the conductive layer, the first metal layer, and the second metal layer of the light emitting diode of FIG. 38.

Please refer to FIGS. 38 and 39, which illustrate a light-emitting diode 600-2 that can be applied to flip-chip packaging. The light-emitting diode 600-2 of this embodiment is similar to the aforementioned light-emitting diode 600-1, and the main difference between the two is: the conductive layer 101-2 of the light-emitting diode 600-2 and the light-emitting diode 600- The conductive layer 101-1 of 1 is different. The following mainly explains this difference, please refer to the above description for the same or similarities between the two.

Referring to FIGS. 38 to 40, the conductive layer 101-2 is located on the second type semiconductor layer 130 and is electrically connected to the second type semiconductor layer 130. The second current conducting layer 150 is electrically connected to the second type semiconductor layer 130 through the conductive layer 101-2. Referring to FIGS. 38 and 40, the conductive layer 101-2 includes a plurality of conductive blocks 101a-2. Unlike the light-emitting diode 600-1, the conductive layer 101-2 of the light-emitting diode 600-2 has more conductive layers 101a-2. The conductive blocks 101a-2 will not be completely disconnected, but will be partially connected. For example, two adjacent conductive blocks 101a-2 are cut off adjacent to the finger portion 180b of the first metal layer 180, and between two adjacent welding portions 180a of the first metal layer 180 (for example, as shown in FIG. 38 at line LM) are connected to each other.

FIG. 41 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 42 is a schematic cross-sectional view corresponding to the line I-J in Fig. 41. Please refer to FIG. 41 and FIG. 42, which illustrate a light emitting diode 600-3 that can be applied to a flip-chip package. The light-emitting diode 600-3 of this embodiment is similar to the aforementioned light-emitting diode 600, and the main difference between the two is that the light-emitting diode 600-3 also includes a bump 106. The following mainly explains this difference, please refer to the above description for the same or similarities between the two.

Referring to FIGS. 41 and 42, the light-emitting diode 600-3 of this embodiment includes the bumps 106 in addition to the components of the light-emitting diode 600 of FIG. 18. The bump 106 is disposed on the second insulating layer 105b. In this embodiment, the second-type semiconductor layer 130 is farther away from the growth substrate 170 than the first-type semiconductor layer 110, and the bumps 106 can be disposed on the second insulating layer 105b above the second-type semiconductor layer 130. Furthermore, the Bragg reflective structure 360' is disposed between the second type semiconductor layer 130 and the second insulating layer 105b, and the bump 106 can be disposed on the stacked structure of the Bragg reflective structure 360' and the second insulating layer 105b. For example, in this embodiment, the bump 106 can be directly disposed on the second insulating layer 105 b, and the insulating layer 113 can cover the bump 106. The bump 106 and the first current conducting layer 140 and/or the second current conducting layer 150 may belong to the same film layer. However, the present invention is not limited to this. In other embodiments, the bumps 106 may also be directly located at other appropriate positions and/or belong to other appropriate film layers, which will be illustrated in the following paragraphs with other illustrations as examples.

Please refer to FIGS. 41 and 42, in this embodiment, the bump 106 and the first current conducting layer 140, the second current conducting layer 150, the first bonding layer 108, and the second bonding layer 109 are misaligned with each other, that is, these The areas of the components do not overlap with each other. The bump 106 is located within the area of the gap between the first current conducting layer 140 and the second current conducting layer 150 and within the area of the gap between the first bonding layer 108 and the second bonding layer 109.

Generally speaking, before the eutectic bonding of the light-emitting diode 600-3 to the external circuit board, the light-emitting diode 600-3 will be placed on the carrier film (for example, blue film; not shown). When the light-emitting diode 600-3 is disposed on the carrier film, the first bonding layer 108 and the second bonding layer 109 of the light-emitting diode 600-3 are on the bottom, and the light-emitting unit U of the light-emitting diode 600-3 is on the top. The bump 106 is closer to the carrier film than the light-emitting unit U. When eutectic bonding the light-emitting diode 600-3 on the carrier film to an external circuit board, the light-emitting diode 600-3 needs to be extracted from the carrier film. In this case, an extraction mechanism arranged under the carrier film is usually used (For example: thimble, not shown), press against the supporting film and the light-emitting diode 600-3 on it. In the case where the bump 106 is provided, the thimble can abut against the bump 106 to assist the extraction mechanism to extract the light-emitting diode 600-3. Based on the consideration of stably resisting the light-emitting diode 600-3, the bump 106 may overlap the mass center line and/or the geometric center line of the light-emitting diode 600-3, but the present invention is not limited thereto. Due to the high ductility of the bump 106 (for example, higher ductility than the insulating layer 113 and/or the second insulating layer 105b), when the extraction mechanism is pressed against the bump 106, the bump 106 is not easily broken and can protect it and The components between the growth substrates 170 (for example: the second insulating layer 105b, the Bragg reflective structure 360', the conductive layer 101, the second type semiconductor layer 130, the light emitting layer 120, the first type semiconductor layer 110, etc.). In this way, the light-emitting diode 600-3 is not easily damaged excessively during the extraction process, and a good process yield can be maintained. In addition, because the bump 106 is electrically isolated from other components of the light emitting diode 600-3 (for example, the first current conducting layer 140, the second current conducting layer 150, the first bonding layer 108, and the second bonding layer 109), Therefore, even if the bump 106 is damaged due to the topping of the extraction mechanism, the electrical characteristics of the light-emitting diode 600-3 are not affected.

Please refer to FIGS. 41 and 42, in this embodiment, the projected area of the second current conducting layer 150 on the growth substrate 170 may be greater than or equal to the projected area of the second bonding layer 109 on the growth substrate 170; the first current conduction The projected area of the layer 140 on the growth substrate 170 may be greater than or equal to the projected area of the first bonding layer 108 on the growth substrate 170, but the present invention is not limited thereto. In this embodiment, the projection of the bump 106 on the growth substrate 170 may be located between the projection of the first current conducting layer 140 on the growth substrate 170 and the projection of the second current conducting layer 150 on the growth substrate 170, and not It overlaps with the first current conducting layer 140 and the second current conducting layer 150.

Please refer to FIG. 41, another difference between the light-emitting diode 600-3 and the aforementioned light-emitting diode 600 is that the first metal layer 180 includes at least one welding portion 180a-1, which is connected to one of the fingers 180b, and The shape of the welding portion 180a of the light-emitting diode 600-3 is different from the shape of the welding portion 180a-1 of the light-emitting diode 600. In detail, in this embodiment, the width W1 of the welding portion 180a-1 of the first metal layer 180 is gradual. For example, the width W1 of the welding portion 180a-1 is greater than the width W of the finger 180b, and the width W1 of the welding portion 180a-1 can be increased first and then decreased gradually from the side close to the corresponding finger 180b. Similarly, in this embodiment, the second metal layer 190 includes at least one welding portion 190a-1, which is connected to the finger portion 190b-1 or 190b-2, and the welding portion 190a-1 of the light-emitting diode 600-3 The shape of is different from the shape of the welding portion 190a-1 of the light-emitting diode 600. In detail, in this embodiment, the width W2 of the welding portion 190a-1 of the second metal layer 190 is gradual. For example, the width W2 of the welding portion 190a-1 is greater than the width W'of the fingers 190b-1 and 190b-2, and the width W2 of the welding portion 190a-1 can be closer to the corresponding fingers 190b-1, 190b-2 One side increases first and then decreases gradually.

Please refer to FIG. 41, another difference between the light-emitting diode 600-3 and the aforementioned light-emitting diode 600 is that the shape of at least one finger portion 190b-2 of the second metal layer 190 of the light-emitting diode 600-3 and The shapes of the fingers 190b of the second metal layer 190 of the light emitting diode 600 are different. For example, in this embodiment, the second metal layer 190 includes a plurality of fingers 190b-1 and a plurality of fingers 190b-2. The finger 190b-1 may be linear. The finger portion 190b-2 includes a straight portion 190b-21 and a curved portion 190b-22, wherein the straight portion 190b-21 of the finger portion 190b-2 is connected to the corresponding welding portion 190a-1 and the curved portion 190b-22 between. The finger portion 190b-1 is arranged between two adjacent finger portions 190b-2, and the curved sub-portions 190b-22 of the two adjacent finger portions 190b-2 are bent toward the finger portion 190b-1 away from the welding portion 190a -1 end. The bending directions of the bending sub-parts 190b-22 of the two finger parts 190b-2 adjacent to the same finger part 190b-1 are opposite. In addition, in this embodiment, the second-type semiconductor layer 130 may be patterned to surround the first metal layer 180, that is, the first metal layer 180 is located in a region where the second-type semiconductor layer 130 is removed. Since the first metal layer 180 is provided with the trigger light layer 120 also removed, the area of the first metal layer 180 may be smaller than or equal to the area of the second metal layer 190 to obtain a sufficient light emitting area. However, with different manufacturing requirements, the areas of the first metal layer 180 and the second metal layer 190 may not be limited by the above relationship.

FIG. 43 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 44 is a schematic cross-sectional view corresponding to the line I1-J1 of FIG. 43. FIG. Please refer to FIG. 43 and FIG. 44, which illustrate a light-emitting diode 600-4 that can be applied to flip-chip packaging. The light-emitting diode 600-4 of this embodiment is similar to the aforementioned light-emitting diode 600-3, and the main difference between the two is: the film layer of the bump 106' of the light-emitting diode 600-4 and the light-emitting diode The film layer of the bump 106 of the body 600-3 is different. In detail, in this embodiment, the bumps 106', the first bonding layer 108, and the second bonding layer 109 may belong to the same film layer. The bump 106' may be disposed on the second insulating layer 105b covering the first current conducting layer 140 and the second current conducting layer 150. Please refer to the foregoing description for the same or similarities of the two, and will not repeat them here.

FIG. 45 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 46 is a schematic cross-sectional view corresponding to the line P-P' in Fig. 45. Fig. 47 is a schematic cross-sectional view corresponding to the line K-K' in Fig. 45. Fig. 48 is a schematic cross-sectional view corresponding to the line N-N' in Fig. 45. Fig. 49 is a schematic cross-sectional view corresponding to the line L-L' in Fig. 45. Fig. 50 is a schematic cross-sectional view corresponding to the line M-M' in Fig. 45. Please refer to FIGS. 45 to 50, the light-emitting diode 600-5 of this embodiment is similar to the aforementioned light-emitting diode 600. The difference between the light-emitting diode 600-5 and the light-emitting diode 600 is that the light-emitting diode The shape of the first current conducting layer 140-5 and the second current conducting layer 150-5 of the body 600-5 is different from the shape of the first current conducting layer 140 and the second current conducting layer 150 of the light emitting diode 600. Please refer to FIG. 45. In detail, in this embodiment, the first current conducting layer 140-5 includes a plurality of conductive portions 142 separated from each other, the second current conducting layer 150-5 has a plurality of notches 152, and the first The plurality of conductive portions 142 of the current conducting layer 140-5 are arranged within the area of the plurality of notches 152 of the second current conducting layer 150-5.

In addition, in this embodiment, from the top view, each welding portion 180 a of the first metal layer 180 may be surrounded by a plurality of welding portions 190 a of the second metal layer 190. The distances K1, K2 between the single welding portion 180a and the nearest different welding portion 190a of the second metal layer 190 may be equal or unequal. For example, in this embodiment, one welding portion 180a of the first metal layer 180 can be surrounded by six welding portions 190a of the second metal layer 190, and the six welding portions 190a of the second metal layer 190 can be arranged Into a hexagonal HX. However, the present invention is not limited to this. In other embodiments, the plurality of welding portions 190a of the second metal layer 190 surrounding the same welding portion 180a of the first metal layer 180 can also be arranged in other suitable shapes. For example, in another embodiment, as shown in FIG. 55, one welding portion 180a of the first metal layer 180 may also be surrounded by four welding portions 190a of the second metal layer 190. The fourth of the second metal layer 190 The welding portions 190a can be arranged in a quadrangular TR; in another embodiment, as shown in FIG. 56, one welding portion 180a of the first metal layer 180 can also be surrounded by eight welding portions 190a of the second metal layer 190. The eight welding portions 190a of the two metal layers 190 can be arranged in an octagonal shape OC.

Please refer to FIGS. 45 and 46, the second bonding layer 109 may have a solid pattern without a through opening located inside. The second bonding layer 109 can fill the through opening 113b of the insulating layer 113 to electrically contact the second current conducting layer 150-5, and the second current conducting layer 150-5 can fill the through opening 166 of the Bragg reflective structure 360'. It is electrically connected to the welding portion 190a of the second metal layer 190 located in the through opening 166. The welding portion 190a of the second metal layer 190 is disposed on the second type semiconductor layer 130 and can be connected to the second type semiconductor layer 130 through the conductive layer 101. The semiconductor layer 130 is electrically connected. In short, the second bonding layer 109 can be electrically connected to the second-type semiconductor layer 130 through the second current conducting layer 150-5, the welding portion 190a of the second metal layer 190, and the conductive layer 101.

In this embodiment, the through opening 113b of the insulating layer 113 and the through opening 166 of the Bragg reflective structure 360' can be arranged in a staggered manner, but they do not overlap as seen from the top view. In addition, the through opening 113b of the insulating layer 113 covered by the second bonding layer 109 has a width W5 in the direction y, and the through opening 166 of the Bragg reflective structure 360' has a width W6 in the direction y, and W5>W6.

Please refer to FIGS. 45 and 47. In this embodiment, the first bonding layer 108 may have a solid pattern without a through opening located inside. The conductive portion 142 of the first current conducting layer 140-5 extends in the direction y, and the through opening 113a of the insulating layer 113 covered by the first bonding layer 108 has a width W3 in the direction y. The through opening 166 of the Bragg reflective structure 360' has a width W4 in the direction y, and W3>W4.

Referring to FIGS. 45, 47 and 49, 50, the first bonding layer 108 can fill the through opening 113a of the insulating layer 113 to electrically contact the conductive portion 142 of the first current conducting layer 140-5, and the first current conducting The conductive portion 142 of the layer 140-5 can be filled into the through opening 166 of the Bragg reflective structure 360 ′ to be electrically connected to the welding portion 180 a of the first metal layer 180 located in the through opening 166. The welding portion 180 a is disposed on the first-type semiconductor layer 110 and is electrically connected to the first-type semiconductor layer 110. In short, the first bonding layer 108 can be electrically connected to the first type semiconductor layer 110 through the conductive portion 142 of the first current conducting layer 140-5 and the welding portion 180 a of the first metal layer 180. In addition, in this embodiment, the through opening 113a of the insulating layer 113 and the through opening 166 of the Bragg reflective structure 360' can be misaligned, but they do not overlap as seen from the top view.

Referring to FIGS. 45 and 48, in this embodiment, the plurality of conductive portions 142 of the first current conducting layer 140-5 are arranged in the direction x and each has an extension direction parallel to the y direction. Each conductive portion 142 has a middle portion 142 a located between the first bonding layer 108 and the second bonding layer 109, which is, for example, a portion where each conductive portion 142 does not overlap the first bonding layer 108 and the second bonding layer 109. The width of the middle segment 142a (or the wide sub-part) of the at least one conductive portion 142 in the direction x is variable. For example, the light-emitting diode 600-5 of FIG. 45 includes three conductive portions 142, wherein the width W7 of the middle portion 142a of the conductive portion 142 located in the middle may gradually decrease from the center toward the first bonding layer 108 and the second bonding layer 109 . The middle portion 142a of the other conductive portions 142 may have a uniform width W8 in the direction x, and the widest part of the width W7 is greater than the width W8.

FIG. 51 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the invention. FIG. 51 may be another embodiment corresponding to the line P-P' in FIG. 45. The light-emitting diode 600-6 of FIG. 51 is similar to the light-emitting diode 600-5 of FIG. 46. The difference between the two is that the light-emitting diode 600-6 of FIG. 51 also includes a second insulating layer 105b. The layer 105b is located between the first current conducting layer 140-5 and the Bragg reflective structure 360' and between the second current conducting layer 150-5 and the Bragg reflective structure 360'. The second insulating layer 105b has a through opening 105ba and a through opening 150bb. The second insulating layer 105b can fill the through opening 166 of the Bragg reflective structure 360'. The first current conducting layer 140-5 fills the through opening 105 ba of the second insulating layer 105 b in the through opening 166 and is electrically connected to the first metal layer 180. The second current conducting layer 150-5 fills the through opening 105bb of the second insulating layer 105b in the through opening 166 and is electrically connected to the second metal layer 190.

FIG. 52 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the invention. FIG. 52 may be another embodiment corresponding to the line P-P' in FIG. 45. The light-emitting diode 600-7 of FIG. 52 is similar to the light-emitting diode 600-6 of FIG. 51. The difference between the two is that the light-emitting diode 600-7 of FIG. 52 can omit the first metal layer 180 and the second metal. With the arrangement of the layer 190, the first current conducting layer 140-5 can be filled in the through opening 105ba of the second insulating layer 105b to directly electrically contact the first type semiconductor layer 110, and the second current conducting layer 150-5 can be filled in the first type semiconductor layer 110. The penetrating opening 105bb of the two insulating layers 105b directly electrically contacts the conductive layer 101 on the second-type semiconductor layer 130.

FIG. 53 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 54 is a schematic cross-sectional view corresponding to the line N1-N1' of FIG. 53. FIG. Please refer to FIGS. 53 and 54, the light-emitting diode 600-8 of this embodiment is similar to the aforementioned light-emitting diode 600-6, and the difference between the two is that the conductive layer 101-8 of the light-emitting diode 600-8 There are multiple gaps 101aa. The plurality of welding portions 180a of the first metal layer 180 are located in the area of the gap 101aa of the conductive layer 101-8. The conductive layer 101-8 includes a plurality of conductive blocks 101a-8, and the first metal layer 180 is located in the area of the gap 101aa separated by the plurality of conductive blocks 101a-8. The plurality of conductive blocks 101a-8 of the conductive layer 101-8 of the light emitting diode 600-8 may not be completely disconnected, but partially connected. In this embodiment, each notch 101aa of the conductive layer 101-8 is substantially located directly below the conductive portion 142 of the first current conducting layer 140-5, but the invention is not limited to this.

In summary, the light emitting diode of an embodiment of the present invention includes a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer. In addition, the light emitting diode further includes a metal layer located on the semiconductor layer and electrically connected to the semiconductor layer, a current conducting layer, and a bonding layer pad. The metal layer is located between the current conducting layer and the semiconductor layer. The current conducting layer is located between the bonding layer and the metal layer. The bonding layer is electrically connected to the semiconductor layer through the current conducting layer and the metal layer. In particular, the pattern of the bonding layer is not solid but has a plurality of through openings, and the through openings of the bonding layer overlap with the metal layer. In other words, the physical area of the bonding layer is misaligned with the physical area of the metal layer, and there is a path between the bonding layer and the metal layer. In this way, when the bonding layer is used for bonding with the external circuit board, the bonding material (for example, solder paste) is not easy to completely flow through the path, causing a short circuit problem.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

12, 22, 162, B12, B22‧‧‧First refraction layer 14, 24,164, B14, B24‧‧‧Second refraction layer 100, 100', 200', 300', 400', 500, 600, 600', 600-1, 600-2, 600-3, 600-4, 600-5, 600-6, 600-7, 600-8‧‧‧LED 101, 101-1, 101-2 ,101-8‧‧‧Conductive layer 101a, 101a-2, 101a-8‧‧‧Conductive block 101aa‧‧‧Gap 103‧‧‧Insulation pattern 103'‧‧‧Insulating material layer 105,113,114‧‧ ‧Insulation layer 105a, I1‧‧‧First insulation layer 105b, I2‧‧‧Second insulation layer 105b', 113'‧‧‧Insulation material layer 106, 106'‧‧‧Bump 107‧‧‧Joint layer 108 ‧‧‧First bonding layer 109‧‧‧Second bonding layer 110‧‧‧First type semiconductor layer 110a, 120a, 103c‧‧‧Sidewall 110'‧‧‧First type semiconductor material layer 111, 120b‧‧‧ First surface 112, 120c‧‧‧Second surface 120‧‧‧Light emitting layer 120'‧‧‧Light emitting material layer 130‧‧‧Second type semiconductor layer 130'‧‧‧Second type semiconductor material layer 140,140- 5‧‧‧First current conducting layer 140a, 150a, 108b, 109b‧‧‧Inner edge 140b, 150b, 108c, 109c‧‧‧Outer edge 142‧‧‧ Conductive part 142a‧‧‧Middle part 150, 150-5 ‧‧‧Second current conducting layer 152‧‧‧Notch 160, 160', 260', 360', 560', DBR1, DBR2, DBR3, DBR4‧‧‧Bragg reflection structure 162'‧‧‧First refractive material layer 164'‧‧‧Second refractive material layer 166, 167, O1, 105aa, 105ab, 105ba, 105bb, 108a, 109a, 113a, 113b, 114a, 114b‧‧‧ Through opening 170‧‧‧Growth substrate 171‧‧‧ The first surface 172‧‧‧The second surface 173‧‧‧The groove 180‧‧‧The first metal layer 180a, 180a-1, 190a, 190a-1‧‧‧The welding part 180b, 190b, 190b-1, 190b- 2‧‧‧Finger part 190b-21‧‧‧Straight line part 190b-22‧‧‧Bent part 182‧‧‧Ohm contact layer 184‧‧‧Reflective layer 186‧‧‧Connecting layer 190‧‧‧Second metal Layer 192‧‧‧Reflective structure 192``‧‧‧Reflective material layer 210‧‧‧First sacrificial layer 210'‧‧‧First sacrificial material layer 212‧‧‧First sacrificial pattern 220‧‧‧Sacrificial layer 222‧ ‧‧Sacrifice Pattern 360''‧‧‧Pile of Reflective Materials in Prague Stack 360'-1‧‧‧Edge zone 360'-2‧‧‧Internal zone B1, B2‧‧‧Main stack C1‧‧‧Transition stack C12‧‧‧Third refractive layer C14‧‧‧Fourth Refractive layers D1, D2, D3, D4‧‧‧Repair stacked layers D12, D22‧‧‧Fifth refraction layer D14, D24‧‧‧Sixth refraction layer G1, G2, G3, G4‧‧‧Pitch HX‧‧‧ Hexagonal L, L1, L2, L2', L3, L4‧‧‧Beam M‧‧‧Metal layer MT‧‧‧Top surface MB‧‧‧Bottom surface MS‧‧‧Side surface N140, N150‧‧‧Notch OC Octagonal P1 ‧‧‧Current conduction path S140, S150‧‧‧Side T1‧‧‧First thickness T2‧‧‧Second thickness T3‧‧‧Third thickness T4, T5, T6‧‧‧Thickness T110～T210‧‧‧ Step TR‧‧‧Quadrangle W, W', W1, W2, W3, W4, W5, W6, W7, W8‧‧‧Width U‧‧‧Light-emitting unit x, y‧‧‧Included angle

FIG. 1A is a cross-sectional view of a light emitting diode according to an embodiment of the invention. FIG. 1B is a reflection spectrum diagram of a Bragg reflection structure according to an embodiment of the present invention. FIG. 1C is a reflection spectrum diagram of a Bragg reflection structure according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. FIG. 3 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. 4 is a cross-sectional view of a light emitting diode according to still another embodiment of the invention. FIG. 5 is a cross-sectional view of a light emitting diode according to another embodiment of the invention. FIG. 6 is a schematic cross-sectional view of a metal layer according to an embodiment of the invention. FIG. 7 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 8 is a schematic cross-sectional view corresponding to the line A-B in Fig. 7. Fig. 9 is a schematic cross-sectional view corresponding to the line B-C in Fig. 7. Fig. 10 is a schematic cross-sectional view corresponding to the line C-D in Fig. 7. Fig. 11 is a schematic cross-sectional view corresponding to the line E-F in Fig. 7. Fig. 12 is a schematic cross-sectional view corresponding to the line G-H in Fig. 7. FIG. 13 is a schematic cross-sectional view of a Bragg reflection structure according to an embodiment of the present invention. FIG. 14 is a schematic cross-sectional view of a Bragg reflection structure according to another embodiment of the present invention. 15 is a schematic cross-sectional view of a Bragg reflection structure according to still another embodiment of the present invention. FIG. 16 is a schematic cross-sectional view of a Bragg reflection structure according to another embodiment of the present invention. FIG. 17 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 18 is a schematic cross-sectional view corresponding to the line A-B in Fig. 17. Fig. 19 is a schematic cross-sectional view corresponding to the line C-D in Fig. 17. FIG. 20 is a schematic top view of a light emitting diode according to another embodiment of the invention. Fig. 21 is a schematic cross-sectional view corresponding to the line C'-D' of Fig. 20. FIG. 22 is a schematic diagram of a manufacturing process of a light-emitting diode according to an embodiment of the present invention. 23A to 24B are schematic cross-sectional views of a method of manufacturing a light-emitting diode according to an embodiment of the invention. Fig. 25 is an enlarged schematic diagram of part R1 of Fig. 23Q. Fig. 26 is an enlarged schematic view of part R2 of Fig. 23R. Fig. 27 is an enlarged schematic view of part R3 of Fig. 23V. FIG. 28 is a schematic diagram of a manufacturing process of a light emitting diode according to another embodiment of the present invention. 29A to 29G are schematic cross-sectional views of a part of a manufacturing method of a light-emitting diode according to another embodiment of the present invention. FIG. 30 is a schematic diagram of a manufacturing process of a light-emitting diode according to another embodiment of the present invention. 31A to 31H are schematic cross-sectional views of a part of a manufacturing method of a light-emitting diode according to another embodiment of the present invention. 32A to 32G are schematic cross-sectional views of a part of the manufacturing process of a light-emitting diode according to still another embodiment of the present invention. FIG. 33 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 34 is a schematic cross-sectional view corresponding to the line A1-B1 of FIG. 33. FIG. Fig. 35 is a schematic cross-sectional view corresponding to the line E-F in Fig. 33. Fig. 36 is a schematic cross-sectional view corresponding to the line G-H in Fig. 33. FIG. 37 is a schematic top view of the conductive layer, the first metal layer, and the second metal layer of the light-emitting diode of FIG. 33. FIG. FIG. 38 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 39 is a schematic cross-sectional view corresponding to the line L-M in Fig. 38. 40 is a schematic top view of the conductive layer, the first metal layer, and the second metal layer of the light emitting diode of FIG. 38. FIG. 41 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 42 is a schematic cross-sectional view corresponding to the line I-J in Fig. 41. FIG. 43 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 44 is a schematic cross-sectional view corresponding to the line I1-J1 of FIG. 43. FIG. FIG. 45 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 46 is a schematic cross-sectional view corresponding to the line P-P' in Fig. 45. Fig. 47 is a schematic cross-sectional view corresponding to the line K-K' in Fig. 45. Fig. 48 is a schematic cross-sectional view corresponding to the line N-N' in Fig. 45. Fig. 49 is a schematic cross-sectional view corresponding to the line L-L' in Fig. 45. Fig. 50 is a schematic cross-sectional view corresponding to the line M-M' in Fig. 45. FIG. 51 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the invention. FIG. 52 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the invention. FIG. 53 is a schematic top view of a light emitting diode according to an embodiment of the invention. FIG. 54 is a schematic cross-sectional view corresponding to the line N1-N1' of FIG. 53. FIG. FIG. 55 is an embodiment of the arrangement of the welding portion of the first metal layer and the welding portion of the second metal layer in the light-emitting diode of FIG. 45. FIG. 56 is another embodiment of the arrangement of the welding part of the first metal layer and the welding part of the second metal layer in the light-emitting diode of FIG. 45.

600‧‧‧Light Emitting Diode

101‧‧‧Conductive layer

103‧‧‧Insulation pattern

105b‧‧‧Second insulating layer

108‧‧‧First bonding layer

109‧‧‧Second bonding layer

110‧‧‧Type 1 semiconductor layer

111‧‧‧First Surface

112‧‧‧Second Surface

120‧‧‧Light-emitting layer

130‧‧‧Second type semiconductor layer

140‧‧‧First current conducting layer

150‧‧‧Second current conducting layer

360’‧‧‧Bragg reflection structure

166, 105ba, 105bb, 108a, 109a, 113a, 113b‧‧‧through opening

170‧‧‧Growth substrate

171‧‧‧First surface

172‧‧‧Second Surface

180‧‧‧First metal layer

180a‧‧‧welding section

190‧‧‧Second metal layer

190a‧‧‧Welding Department

G1, G2, G3, G4‧‧‧Pitch

P1‧‧‧Part One

P2‧‧‧Part Two

S1, S2‧‧‧path

Claims (4)

A method for manufacturing a light-emitting diode includes: forming a plurality of light-emitting units on a growth substrate, wherein each light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer, and the first-type semiconductor layer and A light-emitting layer between the second-type semiconductor layers, the growth substrate has a groove, and a sidewall of the first-type semiconductor layer of each light-emitting unit is aligned with the edge of the groove, wherein the growth substrate The method for forming the light-emitting units includes: sequentially forming a first-type semiconductor material layer, a light-emitting material layer, and a second-type semiconductor material layer on the growth substrate; patterning the first-type semiconductor material layer, the The light emitting material layer and the second type semiconductor material layer to form the first type semiconductor layer, the second type semiconductor layer and the light emitting layer having a first part and a second part, wherein the first type semiconductor layer has a The first portion overlaps the light-emitting layer, the second portion of the first-type semiconductor layer extends outward from the first portion to protrude beyond the area of the light-emitting layer; and the second portion of the first-type semiconductor layer is cut Two parts and the growth substrate to form the sidewall of the first-type semiconductor layer and the groove of the growth substrate; a first insulating layer is formed on the light-emitting units and the groove of the growth substrate, wherein the The first insulating layer covers the sidewall of the first-type semiconductor layer of each light-emitting unit and has a plurality of first through openings and a plurality of second through openings; forming a plurality of first current conducting layers and a plurality of second currents The conductive layer is respectively filled into the first through openings and the second through openings to electrically connect the A plurality of first-type semiconductor layers and a plurality of second-type semiconductor layers of the light-emitting units; and the growth substrate is separated along the groove of the growth substrate to form a plurality of light-emitting diodes. The method for manufacturing a light-emitting diode as described in claim 1, wherein the method of forming the light-emitting units on the growth substrate further includes: forming a first sacrificial layer to cover the first part and the first part Two parts of the first type semiconductor layer, the second type semiconductor layer and the light emitting layer; wherein, when the second part of the first type semiconductor layer and the growth substrate are cut, the first sacrificial layer is also cut. A method for manufacturing a light-emitting diode includes: forming a plurality of light-emitting units on a growth substrate, wherein each light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer, and the first-type semiconductor layer and A light-emitting layer between the second-type semiconductor layers, the growth substrate has a groove, and a sidewall of the first-type semiconductor layer of each light-emitting unit is aligned with the edge of the groove, wherein the growth substrate The method for forming the light-emitting units includes: sequentially forming a first-type semiconductor material layer, a light-emitting material layer, a second-type semiconductor material layer, and a first sacrificial material layer on the growth substrate; A first-type semiconductor material layer, the second-type semiconductor material layer, the light-emitting material layer, and the first sacrificial material layer to form the first-type semiconductor layer, the second-type semiconductor layer, the light-emitting layer, and the first sacrificial material layer Layer, wherein the first-type semiconductor material layer has a first portion overlapping with the light-emitting layer And a second portion extending outward from the first portion and protruding beyond the area of the light-emitting layer; and forming a second sacrificial layer to cover the first sacrificial layer and the first type semiconductor layer The second part; a first insulating layer is formed on the grooves of the light-emitting units and the growth substrate, wherein the first insulating layer covers the sidewall of the first-type semiconductor layer of each light-emitting unit and has multiple A first through opening and a plurality of second through openings; forming a plurality of first current conducting layers and a plurality of second current conducting layers, respectively filling the first through openings and the second through openings to respectively A plurality of first-type semiconductor layers and a plurality of second-type semiconductor layers of the light-emitting units are sexually connected; and the growth substrate is separated along the groove of the growth substrate to form a plurality of light-emitting diodes. The method for manufacturing a light-emitting diode as described in claim 3, wherein the method of forming the light-emitting units on the growth substrate further includes: cutting the second part of the first-type semiconductor layer, the first A sacrificial layer, the second sacrificial layer, and the growth substrate to form the sidewall of the first-type semiconductor layer and the groove of the growth substrate.

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