TWI741814B - Solar cell with passivation layer - Google Patents

Solar cell with passivation layer Download PDF

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TWI741814B
TWI741814B TW109133732A TW109133732A TWI741814B TW I741814 B TWI741814 B TW I741814B TW 109133732 A TW109133732 A TW 109133732A TW 109133732 A TW109133732 A TW 109133732A TW I741814 B TWI741814 B TW I741814B
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passivation layer
solar cell
film
silicon substrate
doped
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TW109133732A
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TW202213806A (en
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田偉辰
洪政源
黃俊凱
葉昌鑫
吳以德
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財團法人金屬工業研究發展中心
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The solar cell with passivation layer includes a doped crystalline silicon substrate, an upper passivation layer, and a lower passivation layer. The doped crystalline silicon substrate comprises a top surface and a bottom surface, the upper passivation layer is disposed on the top surface, and the lower passivation layer is disposed on the bottom surface. The lower passivation layer comprises a tunnel silica film and a doped polysilicon film, the tunnel silica film is located between the doped crystalline silicon substrate and the doped polysilicon film. Wherein the tunnel silica film is formed by a hydrogen-oxygen plasma treating the doped crystalline silicon substrate.

Description

具鈍化層之太陽能電池Solar cell with passivation layer

本發明是關於一種太陽能電池，特別是關於一種具鈍化層之太陽能電池。The present invention relates to a solar cell, in particular to a solar cell with a passivation layer.

太陽能電池為一種藉由光伏效應進行發電的裝置，由於太陽能為可再生能源，在環境意識高漲的現在已成為能源發展的重點之一，全球2020年太陽能發電容量的新安裝量已上看140 GW。隨著太陽能市場的擴張，太陽能電池的發電效率的要求越來越高，其中，背面鈍化太陽能家族(PERx)為目前高效率太陽能電池的主流，然而穿隧型鈍化接觸太陽能電池(TOPCon)實現了背面整體鈍化而有著較高之理論效率，並具有結構簡易、高轉換效率及低漏電流之優勢，使得穿隧型鈍化接觸太陽能電池已開始逐漸取代現有的鈍化射極與背接觸太陽能電池(PERC)成為高效率太陽能電池的發展重點。Solar cells are a device that generates electricity through the photovoltaic effect. Since solar energy is a renewable energy source, it has become one of the focus of energy development when environmental awareness is high. The global new installation of solar power capacity in 2020 has reached 140 GW. . With the expansion of the solar market, the power generation efficiency requirements of solar cells are getting higher and higher. Among them, the back passivation solar family (PERx) is currently the mainstream of high-efficiency solar cells, but the tunneling passivation contact solar cell (TOPCon) has achieved The back surface is passivated as a whole and has a high theoretical efficiency, and has the advantages of simple structure, high conversion efficiency and low leakage current, so that the tunneling passivated contact solar cell has begun to gradually replace the existing passivated emitter and back contact solar cell (PERC ) Has become the focus of the development of high-efficiency solar cells.

本發明的主要目的在於提供一種具鈍化層之太陽能電池，其中具鈍化層之太陽能電池的穿隧氧化矽薄膜是以氫氧電漿對該摻雜結晶矽基板進行處理而形成，由於以氫氧電漿形成的穿隧氧化矽薄膜具有厚度容易控制且均勻度高的功效，可有效地解決太陽能電池介面缺陷的問題並提供良好的載子選擇性，使太陽能電池轉換效率提升。The main purpose of the present invention is to provide a solar cell with a passivation layer, in which the tunneling silicon oxide film of the solar cell with a passivation layer is formed by treating the doped crystalline silicon substrate with hydrogen and oxygen plasma. The tunneling silicon oxide film formed by plasma has the effect of easy control of thickness and high uniformity, can effectively solve the problem of solar cell interface defects, provide good carrier selectivity, and improve the conversion efficiency of solar cells.

本發明之一種具鈍化層之太陽能電池包含一摻雜結晶矽基板、一上鈍化層及一下鈍化層，該摻雜結晶矽基板具有一上表面及一下表面，該上鈍化層設置於該上表面，該下鈍化層設置於該下表面，該下鈍化層具有一穿隧氧化矽薄膜及一摻雜多晶矽薄膜，該穿隧氧化矽薄膜位於該摻雜結晶矽基板及該摻雜多晶矽薄膜之間，其中，該穿隧氧化矽薄膜是以一氫氧電漿對該摻雜結晶矽基板進行處理而形成。A solar cell with a passivation layer of the present invention includes a doped crystalline silicon substrate, an upper passivation layer and a lower passivation layer. The doped crystalline silicon substrate has an upper surface and a lower surface, and the upper passivation layer is disposed on the upper surface. , The lower passivation layer is disposed on the lower surface, the lower passivation layer has a tunneling silicon oxide film and a doped polysilicon film, the tunneling silicon oxide film is located between the doped crystalline silicon substrate and the doped polysilicon film Wherein, the tunneling silicon oxide film is formed by processing the doped crystalline silicon substrate with a hydrogen-oxygen plasma.

本發明藉由該氫氧電漿對該摻雜結晶矽基板進行處理，而形成穩定度及均勻度皆高之該穿隧氧化矽薄膜，相當適合大量量產的製程，且由於該穿隧氧化矽薄膜具有良好的載子選擇性，並讓該摻雜多晶矽薄膜容易鍍上，可提高該具鈍化層之太陽能電池的轉換效率。The present invention uses the hydrogen-oxygen plasma to process the doped crystalline silicon substrate to form the tunneling silicon oxide film with high stability and uniformity, which is quite suitable for mass production processes, and due to the tunneling oxidation The silicon thin film has good carrier selectivity and allows the doped polysilicon thin film to be easily plated, which can improve the conversion efficiency of the solar cell with a passivation layer.

請參閱第1圖，為本發明之一種具鈍化層之太陽能電池100的結構示意圖，該具鈍化層之太陽能電池100具有一摻雜結晶矽基板110、一上鈍化層120、一下鈍化層130、一上電極140、一下電極150及一保護層160。該摻雜結晶矽基板110可為P型摻雜結晶矽基板或N型摻雜結晶矽基板，較佳的，該摻雜結晶矽基板110為N型摻雜結晶矽基板，可相對具有較佳的發電效率。Please refer to FIG. 1, which is a schematic structural diagram of a solar cell 100 with a passivation layer of the present invention. The solar cell 100 with a passivation layer has a doped crystalline silicon substrate 110, an upper passivation layer 120, a lower passivation layer 130, An upper electrode 140, a lower electrode 150 and a protective layer 160. The doped crystalline silicon substrate 110 can be a P-type doped crystalline silicon substrate or an N-type doped crystalline silicon substrate. Preferably, the doped crystalline silicon substrate 110 is an N-type doped crystalline silicon substrate. The power generation efficiency.

請參閱第1圖，該摻雜結晶矽基板110具有一上表面111及一下表面112，該上鈍化層120設置於該上表面111，該上鈍化層120具有至少一鈍化薄膜，該鈍化薄膜可透過化學氣相沉積法、物理氣相沉積法或原子沉積法形成於該摻雜結晶矽基板110之該上表面111，該鈍化薄膜的材料可選自於氮化矽、氮氧化矽、氧化矽、氧化鋁或氧化鉿的單層或多層結構。在本實施例中，該上鈍化層120具有一第一鈍化薄膜121及一第二鈍化薄膜122，該第一鈍化薄膜121形成於該摻雜結晶矽基板110之該上表面111，該第二鈍化薄膜122形成於該第一鈍化薄膜121上，較佳的，該第一鈍化薄膜121為氧化鋁(AlO x)，用以修補該摻雜結晶矽基板110之該上表面111的缺陷，該第二鈍化薄膜122為氮化矽(SiN x)，亦用以修補該摻雜結晶矽基板110之該上表面111的缺陷並作為抗反射層而提高該具鈍化層之太陽能電池100的入射光量。於第1圖中，該摻雜結晶矽基板110之該上表面111為一平面，但該上表面111亦可具有四角錐或三角錐或其他不平整的結構，以進一步地減少該上表面111的反射率。 Please refer to Figure 1, the doped crystalline silicon substrate 110 has an upper surface 111 and a lower surface 112, the upper passivation layer 120 is disposed on the upper surface 111, the upper passivation layer 120 has at least one passivation film, the passivation film can The passivation film is formed on the upper surface 111 of the doped crystalline silicon substrate 110 by chemical vapor deposition, physical vapor deposition, or atomic deposition. The passivation film can be selected from silicon nitride, silicon oxynitride, and silicon oxide. , Alumina or hafnium oxide single-layer or multi-layer structure. In this embodiment, the upper passivation layer 120 has a first passivation film 121 and a second passivation film 122. The first passivation film 121 is formed on the upper surface 111 of the doped crystalline silicon substrate 110, and the second passivation film 121 is formed on the upper surface 111 of the doped crystalline silicon substrate 110. A passivation film 122 is formed on the first passivation film 121. Preferably, the first passivation film 121 is aluminum oxide (AlO x ) to repair defects on the upper surface 111 of the doped crystalline silicon substrate 110. The The second passivation film 122 is silicon nitride (SiN x ), which is also used to repair defects on the upper surface 111 of the doped crystalline silicon substrate 110 and act as an anti-reflection layer to increase the amount of incident light of the solar cell 100 with a passivation layer . In Figure 1, the upper surface 111 of the doped crystalline silicon substrate 110 is a flat surface, but the upper surface 111 may also have a quadrangular pyramid or triangular pyramid or other uneven structure to further reduce the upper surface 111的Reflectivity.

該上電極140藉由網印於該上鈍化層120上，再透過燒結製程燒穿該上鈍化層120而與該摻雜結晶矽基板110之該上表面111電性連接，該上電極140用以將該摻雜結晶矽基板110受到光照而產生之電流導出。The upper electrode 140 is screen-printed on the upper passivation layer 120, and then burned through the upper passivation layer 120 through a sintering process to be electrically connected to the upper surface 111 of the doped crystalline silicon substrate 110. The upper electrode 140 is used for The current generated when the doped crystalline silicon substrate 110 is exposed to light is derived.

該下鈍化層130設置於該下表面112，在本實施例中，該下鈍化層130具有一穿隧氧化矽薄膜131及一摻雜多晶矽薄膜132，該穿隧氧化矽薄膜131位於該摻雜結晶矽基板110及該摻雜多晶矽薄膜132之間，其中，該穿隧氧化矽薄膜131是以一氫氧電漿對該摻雜結晶矽基板110之該下表面112進行處理而成。The lower passivation layer 130 is disposed on the lower surface 112. In this embodiment, the lower passivation layer 130 has a tunneling silicon oxide film 131 and a doped polysilicon film 132. The tunneling silicon oxide film 131 is located on the doped silicon oxide film. Between the crystalline silicon substrate 110 and the doped polysilicon film 132, the tunneling silicon oxide film 131 is formed by processing the lower surface 112 of the doped crystalline silicon substrate 110 with a hydrogen-oxygen plasma.

請參閱第2圖，其為一超高頻電漿系統200以該氫氧電漿對該摻雜結晶矽基板110之該下表面112進行處理的示意圖，該超高頻電漿系統200具有一反應腔210，並透過一幫浦對該反應腔210抽氣，以排除該反應腔210中的氣體並保持該反應腔210的壓力。該摻雜結晶矽基板110設置於該反應腔210中，該超高頻電漿系統200將一製程氣體G通入該反應腔210中，並透過一射頻產生器RF產生一射頻訊號至該反應腔210中的一電極220，該電極220將該製程氣體G解離為電漿。Please refer to FIG. 2, which is a schematic diagram of an UHF plasma system 200 using the hydrogen-oxygen plasma to process the lower surface 112 of the doped crystalline silicon substrate 110. The UHF plasma system 200 has a The reaction chamber 210 is pumped through a pump to remove the gas in the reaction chamber 210 and maintain the pressure of the reaction chamber 210. The doped crystalline silicon substrate 110 is disposed in the reaction chamber 210. The UHF plasma system 200 passes a process gas G into the reaction chamber 210, and generates a radio frequency signal to the reaction through a radio frequency generator RF An electrode 220 in the cavity 210 dissociates the process gas G into plasma.

在本實施例中，該超高頻電漿系統200是加熱一液態純水而形成一水氣，再透過一惰性氣體將該水氣導入該反應腔210中做為該製程氣體G，該反應腔210中的該電極220將該水氣解離為該氫氧電漿，該氫氧電漿將位於該摻雜結晶矽基板110之該下表面112的矽原子斷鍵，並連接氧原子及氫原子於斷鍵之該矽原子上而形成該穿隧氧化矽薄膜131。較佳的，藉由該氫氧電漿形成之該穿隧氧化矽薄膜131的一厚度介於0.1~3 nm之間，可具有良好的載子選擇性，而在允許電子通過的同時阻擋電洞的複合，以提高該具鈍化層之太陽能電池100的載子壽命及轉換效率。In this embodiment, the UHF plasma system 200 heats a liquid pure water to form a water vapor, and then introduces the water vapor into the reaction chamber 210 as the process gas G through an inert gas. The electrode 220 in the cavity 210 dissociates the water vapor into the oxyhydrogen plasma, and the oxyhydrogen plasma breaks the bonds of silicon atoms on the lower surface 112 of the doped crystalline silicon substrate 110, and connects oxygen atoms and hydrogen Atoms are formed on the broken silicon atom to form the tunneling silicon oxide film 131. Preferably, the tunneling silicon oxide film 131 formed by the hydrogen-oxygen plasma has a thickness between 0.1 and 3 nm, which has good carrier selectivity, and blocks electrons while allowing electrons to pass through. The recombination of holes can improve the carrier lifetime and conversion efficiency of the solar cell 100 with a passivation layer.

在本實施例中，該超高頻電漿系統200加熱該液態純水的溫度介於70-95℃之間，使得該反應腔210中能夠含有足夠的該水氣形成氫氧電漿。該超高頻電漿系統200的一操作頻率介於13~40 MHz之間，該超高頻電漿系統200的一製程壓力介於100~1000 mtorr之間，該超高頻電漿系統200的一基板溫度介於25~300 ℃之間，該超高頻電漿系統200的一射頻功率介於30~500 mW/cm 2之間。藉由上述之該超高頻電漿系統200的製程參數能夠穩定地於該摻雜結晶矽基板110之該下表面112形成極薄且均勻度高的該穿隧氧化矽薄膜131。 In this embodiment, the temperature at which the UHF plasma system 200 heats the liquid pure water is between 70-95° C., so that the reaction chamber 210 can contain enough water to form hydrogen-oxygen plasma. An operating frequency of the UHF plasma system 200 is between 13 and 40 MHz, and a process pressure of the UHF plasma system 200 is between 100 and 1000 mtorr. The UHF plasma system 200 has an operating frequency between 13 and 40 MHz. The temperature of a substrate is between 25°C and 300°C, and the RF power of the UHF plasma system 200 is between 30 and 500 mW/cm 2 . With the aforementioned process parameters of the UHF plasma system 200, it is possible to stably form the extremely thin and highly uniform tunneling silicon oxide film 131 on the lower surface 112 of the doped crystalline silicon substrate 110.

請參閱第1圖，該摻雜多晶矽薄膜132透過化學氣相沉積法形成於該穿隧氧化矽薄膜131上後再經由熱處理而形成，該摻雜多晶矽薄膜132的一摻雜濃度介於10 18~10 21m -3，且該摻雜多晶矽薄膜132經過800~950℃之間的熱處理後，該摻雜多晶矽薄膜132的一結晶度介於50~90%之間，使該摻雜多晶矽薄膜132的一薄膜片電阻介於50~120Ω之間。此外，由於以該氫氧電漿處理而成之該穿隧氧化矽薄膜131中具有氫原子，可讓該摻雜多晶矽薄膜132更容易的鍍上，使得由該穿隧氧化矽薄膜131及該摻雜多晶矽薄膜132構成的該下鈍化層130具有極佳的鈍化能力。 Referring to Figure 1, the doped polysilicon film 132 is formed on the tunneling silicon oxide film 131 by chemical vapor deposition and then formed by heat treatment. The doped polysilicon film 132 has a doping concentration of 10 18 ~10 21 m -3 , and after the doped polysilicon film 132 is heat-treated between 800 and 950 ℃, the crystallinity of the doped polysilicon film 132 is between 50 and 90%, so that the doped polysilicon film 132 A sheet resistance of 132 is between 50~120Ω. In addition, since the tunneling silicon oxide film 131 processed by the hydrogen-oxygen plasma has hydrogen atoms, the doped polysilicon film 132 can be plated more easily, so that the tunneling silicon oxide film 131 and the The lower passivation layer 130 composed of the doped polysilicon film 132 has excellent passivation ability.

該保護層160形成於該下鈍化層130上，該保護層160可為氮化矽，用以罩蓋並保護該下鈍化層130。該下電極150藉由網印及燒結製程燒穿該保護層160而與該摻雜多晶矽薄膜132電性連接，該下電極150用以將該摻雜結晶矽基板110受到光照而產生之電流經由該下鈍化層130導出。The protective layer 160 is formed on the lower passivation layer 130. The protective layer 160 may be silicon nitride to cover and protect the lower passivation layer 130. The bottom electrode 150 is electrically connected to the doped polysilicon film 132 by burning through the protective layer 160 through a screen printing and sintering process. The bottom electrode 150 is used to pass the current generated by the doped crystalline silicon substrate 110 under light. The lower passivation layer 130 is led out.

本發明藉由該氫氧電漿對該摻雜結晶矽基板110進行處理，以形成穩定度及均勻度皆高之該穿隧氧化矽薄膜131，相當適合大量量產的製程，且由於該穿隧氧化矽薄膜131具有良好的載子選擇性，並讓該摻雜多晶矽薄膜132容易鍍上，可提高該具鈍化層之太陽能電池100的轉換效率。The present invention uses the hydrogen-oxygen plasma to process the doped crystalline silicon substrate 110 to form the tunneling silicon oxide film 131 with high stability and uniformity, which is quite suitable for a mass production process, and because of the penetration The tunneled silicon oxide film 131 has good carrier selectivity and allows the doped polysilicon film 132 to be easily plated, which can improve the conversion efficiency of the solar cell 100 with a passivation layer.

本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。The scope of protection of the present invention shall be determined by the scope of the attached patent application. Anyone who is familiar with the art and makes any changes and modifications without departing from the spirit and scope of the present invention shall fall within the scope of protection of the present invention. .

100:具鈍化層之太陽能電池100: Solar cell with passivation layer

110:摻雜結晶矽基板110: Doped crystalline silicon substrate

111:上表面111: upper surface

112:下表面112: lower surface

120:上鈍化層120: Upper passivation layer

121:第一鈍化薄膜121: The first passivation film

122:第二鈍化薄膜122: second passivation film

130:下鈍化層130: lower passivation layer

131:穿隧氧化矽薄膜131: Tunneling silicon oxide film

132:摻雜多晶矽薄膜132: Doped polysilicon film

140:上電極140: Upper electrode

150:下電極150: lower electrode

160:保護層160: protective layer

200:超高頻電漿系統200: UHF Plasma System

210:反應腔210: Reaction Chamber

220:電極220: Electrode

G:製程氣體G: Process gas

RF:射頻產生器RF: Radio Frequency Generator

第1圖： 依據本發明之一實施例，一具鈍化層之太陽能電池的結構示意圖。 第2圖： 依據本發明之一實施例，一超高頻電漿系統的示意圖。 Figure 1: A schematic diagram of the structure of a solar cell with a passivation layer according to an embodiment of the present invention. Figure 2: A schematic diagram of a UHF plasma system according to an embodiment of the present invention.

100:具鈍化層之太陽能電池 100: Solar cell with passivation layer

110:摻雜結晶矽基板 110: Doped crystalline silicon substrate

111:上表面 111: upper surface

112:下表面 112: lower surface

120:上鈍化層 120: Upper passivation layer

121:第一鈍化薄膜 121: The first passivation film

122:第二鈍化薄膜 122: second passivation film

130:下鈍化層 130: lower passivation layer

131:穿隧氧化矽薄膜 131: Tunneling silicon oxide film

132:摻雜多晶矽薄膜 132: Doped polysilicon film

140:上電極 140: Upper electrode

150:下電極 150: lower electrode

160:保護層 160: protective layer

Claims (9)

一種具鈍化層之太陽能電池，其包含：一摻雜結晶矽基板，具有一上表面及一下表面；一上鈍化層，設置於該上表面；以及一下鈍化層，設置於該下表面，該下鈍化層具有一穿隧氧化矽薄膜及一摻雜多晶矽薄膜，該穿隧氧化矽薄膜位於該摻雜結晶矽基板及該摻雜多晶矽薄膜之間，其中該穿隧氧化矽薄膜是以一氫氧電漿對該摻雜結晶矽基板進行處理而形成，其中該穿隧氧化矽薄膜含有氫原子。 A solar cell with a passivation layer, comprising: a doped crystalline silicon substrate having an upper surface and a lower surface; an upper passivation layer disposed on the upper surface; and a lower passivation layer disposed on the lower surface, the lower surface The passivation layer has a tunneling silicon oxide film and a doped polysilicon film. The tunneling silicon oxide film is located between the doped crystalline silicon substrate and the doped polysilicon film, wherein the tunneling silicon oxide film is a hydrogen-oxygen Plasma is formed by processing the doped crystalline silicon substrate, wherein the tunneling silicon oxide film contains hydrogen atoms. 如請求項1之具鈍化層之太陽能電池，其中一超高頻電漿系統加熱一液態純水而形成一水氣，再透過一惰性氣體將該水氣導入該超高頻電漿系統之一反應腔中並將其解離為該氫氧電漿。 For example, the solar cell with a passivation layer of claim 1, in which an ultra-high frequency plasma system heats a liquid pure water to form a water vapor, and then introduces the water vapor into one of the ultra-high frequency plasma systems through an inert gas And dissociate into the hydrogen-oxygen plasma. 如請求項2之具鈍化層之太陽能電池，其中該超高頻電漿系統的一操作頻率介於13~40MHz之間，該超高頻電漿系統的一製程壓力介於100~1000mtorr之間，該超高頻電漿系統的一基板溫度介於25~300℃之間，該超高頻電漿系統的一射頻功率介於30~500mW/cm2之間。 For example, the solar cell with a passivation layer of claim 2, wherein an operating frequency of the UHF plasma system is between 13-40 MHz, and a process pressure of the UHF plasma system is between 100 and 1000 mtorr The temperature of a substrate of the UHF plasma system is between 25 and 300°C, and the RF power of the UHF plasma system is between 30 and 500 mW/cm 2 . 如請求項1之具鈍化層之太陽能電池，其中該穿隧氧化矽薄膜的一厚度介於0.1~3nm之間。 For example, the solar cell with a passivation layer of claim 1, wherein a thickness of the tunneling silicon oxide film is between 0.1 and 3 nm. 如請求項1之具鈍化層之太陽能電池，其中該上鈍化層具有至少一鈍化薄膜，該鈍化薄膜的材料可選自為氮化矽、氮氧化矽、氧化矽、氧化鋁或氧化鉿。 The solar cell with a passivation layer of claim 1, wherein the upper passivation layer has at least one passivation film, and the material of the passivation film can be selected from silicon nitride, silicon oxynitride, silicon oxide, aluminum oxide, or hafnium oxide. 如請求項5之具鈍化層之太陽能電池，其中該鈍化薄膜可透過化學氣相沉積法、物理氣相沉積法或原子沉積法形成於該摻雜結晶矽基板之該上 表面。 The solar cell with a passivation layer of claim 5, wherein the passivation film can be formed on the doped crystalline silicon substrate by chemical vapor deposition, physical vapor deposition, or atomic deposition surface. 如請求項1之具鈍化層之太陽能電池，其中該摻雜結晶矽基板為N型摻雜結晶矽基板。 According to claim 1, the solar cell with a passivation layer, wherein the doped crystalline silicon substrate is an N-type doped crystalline silicon substrate. 如請求項1之具鈍化層之太陽能電池，其中該摻雜多晶矽薄膜是以化學氣相沉積法形成於該穿隧氧化矽薄膜上，且該摻雜多晶矽薄膜的一摻雜濃度介於1018~1021m-3。 The solar cell with a passivation layer of claim 1, wherein the doped polysilicon film is formed on the tunneling silicon oxide film by a chemical vapor deposition method, and a doping concentration of the doped polysilicon film is 10 18 ~10 21 m -3 . 如請求項8之具鈍化層之太陽能電池，其中該摻雜多晶矽薄膜經過800~950℃之間的熱處理後，該摻雜多晶矽薄膜的一結晶度介於50~90%之間，該摻雜多晶矽薄膜的一薄膜片電阻介於50~120Ω之間。For example, the solar cell with a passivation layer of claim 8, wherein after the doped polysilicon film is heat-treated between 800 and 950°C, the crystallinity of the doped polysilicon film is between 50 and 90%, and the doped polysilicon film The sheet resistance of a polysilicon film is between 50~120Ω.
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Publication number Priority date Publication date Assignee Title
TW201933617A (en) * 2018-01-15 2019-08-16 財團法人工業技術研究院 Solar cell
TW202105752A (en) * 2019-07-24 2021-02-01 財團法人金屬工業研究發展中心 Solar cell structure and method of manufacturing the same

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* Cited by examiner, † Cited by third party
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TW201933617A (en) * 2018-01-15 2019-08-16 財團法人工業技術研究院 Solar cell
TW202105752A (en) * 2019-07-24 2021-02-01 財團法人金屬工業研究發展中心 Solar cell structure and method of manufacturing the same

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