TWI741337B - Vacuum pump system with remote plasma device - Google Patents
Vacuum pump system with remote plasma device Download PDFInfo
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- TWI741337B TWI741337B TW108127522A TW108127522A TWI741337B TW I741337 B TWI741337 B TW I741337B TW 108127522 A TW108127522 A TW 108127522A TW 108127522 A TW108127522 A TW 108127522A TW I741337 B TWI741337 B TW I741337B
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- 239000012212 insulator Substances 0.000 claims abstract description 62
- 238000004140 cleaning Methods 0.000 claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 22
- 239000006227 byproduct Substances 0.000 description 19
- 239000002243 precursor Substances 0.000 description 13
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- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000010849 ion bombardment Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- 239000002184 metal Substances 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 238000005086 pumping Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
- F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C18/00—Rotary-piston pumps specially adapted for elastic fluids
- F04C18/08—Rotary-piston pumps specially adapted for elastic fluids of intermeshing-engagement type, i.e. with engagement of co-operating members similar to that of toothed gearing
- F04C18/12—Rotary-piston pumps specially adapted for elastic fluids of intermeshing-engagement type, i.e. with engagement of co-operating members similar to that of toothed gearing of other than internal-axis type
- F04C18/14—Rotary-piston pumps specially adapted for elastic fluids of intermeshing-engagement type, i.e. with engagement of co-operating members similar to that of toothed gearing of other than internal-axis type with toothed rotary pistons
- F04C18/16—Rotary-piston pumps specially adapted for elastic fluids of intermeshing-engagement type, i.e. with engagement of co-operating members similar to that of toothed gearing of other than internal-axis type with toothed rotary pistons with helical teeth, e.g. chevron-shaped, screw type
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C23/00—Combinations of two or more pumps, each being of rotary-piston or oscillating-piston type, specially adapted for elastic fluids; Pumping installations specially adapted for elastic fluids; Multi-stage pumps specially adapted for elastic fluids
- F04C23/001—Combinations of two or more pumps, each being of rotary-piston or oscillating-piston type, specially adapted for elastic fluids; Pumping installations specially adapted for elastic fluids; Multi-stage pumps specially adapted for elastic fluids of similar working principle
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C25/00—Adaptations of pumps for special use of pumps for elastic fluids
- F04C25/02—Adaptations of pumps for special use of pumps for elastic fluids for producing high vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- Plasma Technology (AREA)
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Abstract
Description
本發明係關於一種真空泵系統。更具體地,本發明係關於一種用於清洗真空泵的遠端電漿裝置。The invention relates to a vacuum pump system. More specifically, the present invention relates to a remote plasma device for cleaning a vacuum pump.
真空泵係安裝在真空腔室後端的設備,用於在真空下進行半導體、顯示器等製程。真空泵的前端透過真空管(foreline)連接於真空腔室,而真空泵的後端連接於常壓洗滌塔(scrubber)。The vacuum pump is a device installed at the back end of the vacuum chamber and used to process semiconductors and displays under vacuum. The front end of the vacuum pump is connected to the vacuum chamber through a foreline, and the back end of the vacuum pump is connected to a scrubber.
真空泵由位於真空管方向的一個增壓泵(booster pump)和位於洗滌塔方向的一個或兩個前級泵(backing pump)組成。增壓泵和前級泵各自內部具有一對轉子(rotor),透過轉子的旋轉來降低壓力。The vacuum pump consists of a booster pump located in the direction of the vacuum tube and one or two backing pumps located in the direction of the scrubber. The booster pump and the backing pump each have a pair of rotors inside, and the pressure is reduced by the rotation of the rotors.
在真空腔室如沉積腔室中,透過作為沈積原料的前驅物與反應氣體的化學反應來沉積薄膜。未用於沉積的前驅物在吹掃(purge)區從真空腔室排出,而製程副產物顆粒在清洗區從真空腔室排出。排出的前驅物和顆粒副產物的一部分積聚在轉子上而導致轉子之間堵塞,這會造成真空泵的性能下降。In a vacuum chamber such as a deposition chamber, a thin film is deposited through a chemical reaction between a precursor as a deposition material and a reaction gas. Precursors not used for deposition are discharged from the vacuum chamber in the purge zone, and process by-product particles are discharged from the vacuum chamber in the purge zone. A part of the discharged precursors and particulate by-products accumulate on the rotors and cause blockage between the rotors, which will cause the performance of the vacuum pump to decrease.
採用各種方式防止前驅物和顆粒副產物積聚在轉子上。例如,(1)對真空泵的殼體進行加熱,以使前驅物和顆粒副產物氣化;或者(2)向因轉子之間的間距小而對積聚更敏感的前級泵注入大量的氮氣進行吹掃;或者(3)真空管上設置彎管(trap);或者(4)在真空管中產生電漿,以使前驅物和顆粒副產物變成氣體或微小顆粒。Various methods are used to prevent accumulation of precursors and particulate by-products on the rotor. For example, (1) heating the housing of the vacuum pump to vaporize precursors and particulate by-products; or (2) injecting a large amount of nitrogen into the backing pump, which is more sensitive to accumulation due to the small distance between the rotors. Purging; or (3) a trap is set on the vacuum tube; or (4) a plasma is generated in the vacuum tube so that the precursor and the particle by-products become gas or tiny particles.
然而,方法(1)受到加熱溫度的限制,因為內部零件會損壞,而方法(2)清洗效果不大,製程成本高。對於方法(3),為了更換彎管而造成積聚在彎管的前驅物暴露於大氣時,可能會引起火災和爆炸,而方法(4)隨著前驅物和顆粒副產物的量增加,需要提高輸入功率,因此製程成本上升,而且由於直接離子轟擊,可能會造成轉子受損。However, the method (1) is limited by the heating temperature because the internal parts will be damaged, while the method (2) has little cleaning effect and high process cost. For method (3), when the precursor accumulated in the elbow is exposed to the atmosphere in order to replace the elbow, it may cause fire and explosion, while method (4) needs to be improved as the amount of precursor and particle by-products increases. Input power, so the cost of the process increases, and the rotor may be damaged due to direct ion bombardment.
本發明旨在提供一種具有遠端電漿裝置的真空泵系統,該系統可在真空腔室運轉期間去除積聚於真空泵的轉子的前驅物和顆粒副產物,不會導致轉子受損。The present invention aims to provide a vacuum pump system with a remote plasma device, which can remove precursors and particulate by-products accumulated on the rotor of the vacuum pump during the operation of the vacuum chamber without causing damage to the rotor.
根據本發明的一個實施例的真空泵系統,其包含:前端泵浦和後端泵浦,其連接於真空管;以及遠端電漿裝置,其設置於真空管的外側。遠端電漿裝置包含:管狀接地電極,其圍繞形成於真空管的第一開口,並且固定在真空管的外壁上;絕緣體,其結合在接地電極的端部上;以及高壓電極,其位於絕緣體的外表面。接地電極包含:第一管狀部,其與真空管交叉;以及環狀限制部,其與第一管狀部的絕緣體側端部保持距離位於第一管狀部的內側,並且形成有直徑小於真空管內徑的第二開口。限制部將電漿區域限制在遠端電漿裝置的內部空間,電漿中產生的電子和自由基透過真空管擴散到前端泵浦和所述後端泵浦。A vacuum pump system according to an embodiment of the present invention includes: a front-end pump and a back-end pump, which are connected to the vacuum tube; and a remote plasma device, which is arranged on the outside of the vacuum tube. The remote plasma device includes: a tubular ground electrode that surrounds the first opening formed in the vacuum tube and is fixed on the outer wall of the vacuum tube; an insulator coupled to the end of the ground electrode; and a high-voltage electrode located outside the insulator surface. The ground electrode includes: a first tubular portion that crosses the vacuum tube; and a ring-shaped restricting portion that is located inside the first tubular portion at a distance from the insulator-side end of the first tubular portion, and is formed with a diameter smaller than the inner diameter of the vacuum tube The second opening. The restricting part restricts the plasma region to the inner space of the remote plasma device, and electrons and free radicals generated in the plasma diffuse to the front-end pump and the back-end pump through the vacuum tube.
限制部可連接在第一管狀部的真空管側端部上,並且可固定在真空管的外壁上。限制部的面向絕緣體側可形成為傾斜面,傾斜面可具有限制部的厚度離第二開口越遠越大的傾斜度。The restricting part may be connected to the vacuum tube side end of the first tubular part, and may be fixed on the outer wall of the vacuum tube. The side of the restricting portion facing the insulator may be formed as an inclined surface, and the inclined surface may have an inclination that increases the thickness of the restricting portion from the second opening.
另一方面,限制部可與第一管狀部的真空管側端部保持距離連接於第一管狀部,並且可位於比第一管狀部的絕緣體側端部更靠近真空管側端部的位置上。限制部的面向絕緣體側可形成為傾斜面,傾斜面可具有限制部的厚度離第二開口越遠越大的傾斜度。On the other hand, the restricting part may be connected to the first tubular part keeping a distance from the vacuum tube side end of the first tubular part, and may be located closer to the vacuum tube side end than the insulator side end of the first tubular part. The side of the restricting portion facing the insulator may be formed as an inclined surface, and the inclined surface may have an inclination that increases the thickness of the restricting portion from the second opening.
絕緣體可包含:第二管狀部,其結合在第一管狀部的端部上,並具有大於第一管狀部的長度;以及端蓋部,其封堵第二管狀部的端部。高壓電極可以係圍繞第二管狀部的管狀電極和螺旋纏繞於第二管狀部的線圈型電極中的任何一種電極。The insulator may include: a second tubular part that is coupled to an end of the first tubular part and has a length greater than that of the first tubular part; and an end cap part that blocks the end of the second tubular part. The high-voltage electrode may be any one of a tubular electrode surrounding the second tubular part and a coil electrode spirally wound around the second tubular part.
遠端電漿裝置可具有用於注入清洗氣體的第三開口,所述第三開口位於比高壓電極更遠離真空管的位置上。另一方面,遠端電漿裝置可具有用於注入清洗氣體的第三開口,所述第三開口位於比高壓電極更靠近真空管的位置上。The remote plasma device may have a third opening for injecting cleaning gas, and the third opening is located at a position farther away from the vacuum tube than the high-voltage electrode. On the other hand, the remote plasma device may have a third opening for injecting cleaning gas, the third opening being located closer to the vacuum tube than the high-voltage electrode.
另一方面,絕緣體可形成為封堵第一管狀部的端部的板狀,高壓電極可形成為尺寸小於絕緣體的板狀。第一管狀部可具有用於注入清洗氣體的第三開口,所述第三開口位於比限制部更靠近絕緣體的位置上。On the other hand, the insulator may be formed in a plate shape that closes the end of the first tubular portion, and the high-voltage electrode may be formed in a plate shape having a size smaller than that of the insulator. The first tubular portion may have a third opening for injecting cleaning gas, the third opening being located closer to the insulator than the restricting portion.
根據本發明的另一個實施例的真空泵系統,其包含:前端泵浦和後端泵浦,其連接於真空管;以及遠端電漿裝置,其設置於真空管的外側。遠端電漿裝置包含:管狀接地電極,其圍繞形成於真空管的第一開口,並且固定在真空管的外壁上;絕緣體,其結合在接地電極的端部上;以及高壓電極,其位於絕緣體的外表面。接地電極包含:第一管狀部,其與真空管交叉;以及板狀限制部,其與第一管狀部的絕緣體側端部保持距離位於第一管狀部的內側,並且形成有多個第二開口。多個第二開口的整體面積小於真空管內部空間的截面積。限制部將電漿區域限制在遠端電漿裝置的內部空間,電漿中產生的電子和自由基透過真空管擴散到前端泵浦和後端泵浦。A vacuum pump system according to another embodiment of the present invention includes: a front-end pump and a back-end pump, which are connected to the vacuum tube; and a remote plasma device, which is arranged outside the vacuum tube. The remote plasma device includes: a tubular ground electrode that surrounds the first opening formed in the vacuum tube and is fixed on the outer wall of the vacuum tube; an insulator coupled to the end of the ground electrode; and a high-voltage electrode located outside the insulator surface. The ground electrode includes: a first tubular portion that crosses the vacuum tube; and a plate-shaped restriction portion that is located inside the first tubular portion at a distance from the insulator-side end of the first tubular portion, and is formed with a plurality of second openings. The overall area of the plurality of second openings is smaller than the cross-sectional area of the inner space of the vacuum tube. The restriction part restricts the plasma area to the internal space of the remote plasma device, and the electrons and free radicals generated in the plasma diffuse through the vacuum tube to the front-end pump and the back-end pump.
多個第二開口可由沿虛擬圓排列的多個圓弧狀(arc shape)開口組成。限制部可與第一管狀部的真空管側端部保持距離連接於第一管狀部,並且可位於比第一管狀部的絕緣體側端部更靠近真空管側端部的位置上。The plurality of second openings may be composed of a plurality of arc shape openings arranged along a virtual circle. The restricting part may be connected to the first tubular part keeping a distance from the vacuum tube side end of the first tubular part, and may be located closer to the vacuum tube side end than the insulator side end of the first tubular part.
絕緣體可包含:第二管狀部,其結合在第一管狀部的端部上,並具有大於第一管狀部的長度;以及端蓋部,其封堵第二管狀部的端部。高壓電極可以係圍繞第二管狀部的管狀電極和螺旋纏繞於第二管狀部的線圈型電極中的任何一種電極。The insulator may include: a second tubular part that is coupled to an end of the first tubular part and has a length greater than that of the first tubular part; and an end cap part that blocks the end of the second tubular part. The high-voltage electrode may be any one of a tubular electrode surrounding the second tubular part and a coil electrode spirally wound around the second tubular part.
遠端電漿裝置可具有用於注入清洗氣體的第三開口,所述第三開口位於比高壓電極更遠離真空管的位置上。另一方面,遠端電漿裝置可具有用於注入清洗氣體的第三開口,所述第三開口位於比高壓電極更靠近真空管的位置上。The remote plasma device may have a third opening for injecting cleaning gas, and the third opening is located at a position farther away from the vacuum tube than the high-voltage electrode. On the other hand, the remote plasma device may have a third opening for injecting cleaning gas, the third opening being located closer to the vacuum tube than the high-voltage electrode.
另一方面,絕緣體可形成為封堵第一管狀部的端部的板狀,高壓電極可形成為尺寸小於絕緣體的板狀。第一管狀部可具有用於注入清洗氣體的第三開口,所述第三開口位於比限制部更靠近絕緣體的位置上。On the other hand, the insulator may be formed in a plate shape that closes the end of the first tubular portion, and the high-voltage electrode may be formed in a plate shape having a size smaller than that of the insulator. The first tubular portion may have a third opening for injecting cleaning gas, the third opening being located closer to the insulator than the restricting portion.
本發明之效果能提供真空泵系統,無需停止真空腔室的運轉,也會在真空腔室的清洗步驟中產生電漿以清洗轉子,而且不會因離子轟擊而導致轉子受損。因此,可以增加前端泵浦和後端泵浦的使用壽命和維修週期,還可以縮短維修導致的真空腔室的暫停期。The effect of the present invention can provide a vacuum pump system without stopping the operation of the vacuum chamber, and also generate plasma during the cleaning step of the vacuum chamber to clean the rotor, and the rotor will not be damaged due to ion bombardment. Therefore, the service life and maintenance period of the front-end pump and the back-end pump can be increased, and the suspension period of the vacuum chamber caused by the maintenance can also be shortened.
下面參照圖式詳細描述本發明的實施例,以使本發明所屬領域中具有通常知識者容易實施本發明。本發明能夠以各種不同方式實施,並不局限於本文所述的實施例。The embodiments of the present invention will be described in detail below with reference to the drawings, so that those with ordinary knowledge in the field to which the present invention belongs can easily implement the present invention. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.
第1圖係根據本發明的第一實施例的真空泵系統的結構圖。Fig. 1 is a structural diagram of the vacuum pump system according to the first embodiment of the present invention.
參見第1圖,第一實施例的真空泵系統100包含前端泵浦10、透過真空管(foreline)20連接於前端泵浦10的後端泵浦30以及在真空管20的外側接設於真空管20的遠端電漿裝置110。Referring to Figure 1, the
前端泵浦10可以係增壓泵,其連接於未圖示的真空腔室。後端泵浦30可以係前級泵,其連接於未圖示的洗滌塔。真空管20可設置成垂直於地面,前端泵浦10可位於後端泵浦30的上側。The front-
前端泵浦10和後端泵浦30各自可包含一對轉子11、31;包圍一對轉子11、31的殼體12、32;以及用於使一對轉子11、31旋轉的驅動電機和齒輪組件(未圖示)。一對轉子11、31可以係螺桿式轉子,兩個螺桿式轉子相嚙合而旋轉,透過兩個螺桿式轉子的溝槽和殼體12、32之間所形成的體積變化,可以連續地吸入、壓縮及吐出空氣。The front-
前端泵浦10和後端泵浦30的殼體12、32和真空管20由金屬製成並接地。前端泵浦10和後端泵浦30係不使用潤滑油的乾式(dry)泵浦,從根本上杜絕潤滑油逆流所導致的製程不良。The
當真空腔室為沈積腔室時,前端泵浦10和後端泵浦30總是暴露於沉積氣體,從真空腔室排出的前驅物和顆粒副產物會持續地積聚在轉子11、31上。通常,後端泵浦30中一對轉子31之間的間距小於前端泵浦10中一對轉子11之間的間距,後端泵浦30比前端泵浦10對前驅物和顆粒副產物的積聚更敏感。When the vacuum chamber is a deposition chamber, the front-
不同於在真空管20內部直接產生電漿的習知裝置,遠端電漿裝置110透過遠程電漿方式清洗轉子11、31。遠端電漿裝置110具有與真空管20的內部相通的內部空間,並將電漿區域PA限制在內部空間,而且使具有清洗功能的電子和自由基朝前端泵浦10和後端泵浦30的兩個方向擴散。Different from the conventional device that directly generates plasma inside the
電漿區域PA中電子和離子的數量相同,只有存在電場的電漿內部存在離子。由於電子容易擴散,透過真空管20可滲透到前端泵浦10和後端泵浦30的內部。電子和自由基與積聚在前端泵浦10和後端泵浦30的前驅物和顆粒副產物發生化學反應,使前驅物和顆粒副產物轉換成無害的氣體或微小顆粒。The number of electrons and ions in the plasma region PA is the same, and only ions exist inside the plasma where there is an electric field. Since electrons are easily diffused, they can penetrate into the front-
第1圖中PA表示遠端電漿裝置110的電漿區域,CA係清洗區域,表示從電漿區域PA到前端泵浦10和後端泵浦30的轉子11、31的電子和自由基的擴散區域。自由基可包含氟自由基、氯自由基及氧自由基中的至少一種自由基。In the first figure, PA represents the plasma area of the
遠端電漿裝置110防止離子直接轟擊導致轉子11、31受損,透過利用激活具有清洗功能的自由基的擴散和清洗反應的電子來有效地清洗前端泵浦10和後端泵浦30的轉子11、31。The
第2圖係第1圖所示的遠端電漿裝置的放大圖,第3圖係第1圖所示的遠端電漿裝置的立體圖。Fig. 2 is an enlarged view of the remote plasma device shown in Fig. 1, and Fig. 3 is a perspective view of the remote plasma device shown in Fig. 1.
參見第1圖至第3圖,遠端電漿裝置110包含固定在真空管20的外壁上的接地電極40、連接於接地電極40的絕緣體50以及位於絕緣體50的外表面的高壓電極60。遠端電漿裝置110整體上與和真空管20交叉的方向(以第2圖為準橫向)平行設置。1 to 3, the
真空管20上有第一開口21,接地電極40包含與真空管20交叉的第一管狀部43。第一管狀部43包含作為真空管側端部的第一端部(以第2圖為準左側端部)和作為絕緣體側端部的第二端部(以第2圖為準右側端部)。The
接地電極40包含與第一管狀部43的第二端部保持距離位於第一管狀部43內側的限制部42。限制部42形成為環狀,其中形成有直徑d1小於真空管20內徑d2的第二開口41。在第一實施例中,限制部42連接於第一管狀部43的第一端部。The
第一開口21的直徑應等於或大於第二開口41的直徑d1且小於第一管狀部43的外徑。接地電極40透過焊接等方法固定在真空管20的外壁上,並與真空管20一起接地。The diameter of the
絕緣體50包含連接於第一管狀部43的第二端部的第二管狀部51和封堵第二管狀部51的端部(接地電極40的相反側端部)的端蓋部52。The
第二管狀部51與第一管狀部43平行,可具有大於第一管狀部43的長度。第二管狀部51保持密封狀態,可透過插入第一管狀部43內側的方式結合到第一管狀部43,但這只是示例並不受限制。絕緣體50可由玻璃、石英、氧化鋁等電介質製成。The second
遠端電漿裝置110的內部空間係指被接地電極40和絕緣體50包圍的內部空間。The internal space of the
高壓電極60係位於第二管狀部51的外表面的管狀金屬電極,其連接於電源61而接收用於產生電漿的驅動電壓。驅動電壓可以係交流(AC)電壓或高頻(RF)電壓。高壓電極60位於離接地電極40有一定距離的位置上,以免與接地電極40通電。The high-
對於真空泵系統100,遠端電漿裝置110可能會導致排氣性能下降,因此遠端電漿裝置110具有小於前端泵浦10的體積,以便能夠盡量避免排氣性能下降。For the
真空泵系統100在關閉高壓電極60的電源61的狀態下啟動前端泵浦10和後端泵浦30以執行常規的泵浦功能,當從真空腔室排出的前驅物和顆粒副產物積聚在轉子11、31上導致前端泵浦10和後端泵浦30的性能下降時,將會進行電漿清洗。The
具體地,在前端泵浦10和後端泵浦30運轉期間,向高壓電極60施加驅動電壓時,由於高壓電極60和接地電極40之間的電壓差,在與高壓電極60重疊的絕緣體50的內部空間和接地電極40的內部空間產生電容耦合電漿(Capacitively Coupled Plasma,CCP)。Specifically, during the operation of the front-
電容耦合電漿係利用絕緣體50(電介質)的壁電壓的放電形式,可透過較低的驅動電壓產生穩定的電漿。The capacitively coupled plasma is a form of discharge using the wall voltage of the insulator 50 (dielectric), which can generate a stable plasma through a lower driving voltage.
遠端電漿裝置110製作成與真空管20相通側的開口(第二開口41)小於第一管狀部43內徑的狀態,因此電漿區域PA不會擴展至真空管20的內部,而是被限制在遠端電漿裝置110的內部空間。因此,大部分離子會留在電漿區域PA,而電子和自由基透過第一開口21和第二開口41向前端泵浦10和後端泵浦30擴散。The
製程氣體中含有固態或液態的製程副產物,如果這些製程副產物流入遠端電漿裝置110,就會積聚在內壁上,從而阻礙產生穩定的電漿。在第一實施例中,第二開口41的直徑d1小於真空管20的內徑d2。在此情況下,對遠端電漿裝置110的製程副產物的流入和積聚得到抑制,從而可以產生穩定的電漿。The process gas contains solid or liquid process by-products. If these process by-products flow into the
當電漿中產生的離子轟擊轉子11、31表面時,離子轟擊會導致轉子11、31表面受損。遠端電漿裝置110將導致轉子11、31受損的離子囚禁在電漿區域PA以抑制轉子11、31受損,並使具有清洗功能的電子和自由基擴散,從而實施清洗。When the ions generated in the plasma bombard the surfaces of the
在一般的情況下,真空腔室中進行的沉積製程包含四個步驟如沉積、初次吹掃、清洗、二次吹掃。在清洗步驟中使用的清洗氣體可包含三氟化氮(NF3 )、六氟化硫(SF6 )、三氟化氯(ClF3 )及氧氣(O2 )等。In general, the deposition process performed in the vacuum chamber includes four steps such as deposition, primary purging, cleaning, and secondary purging. The cleaning gas used in the cleaning step may include nitrogen trifluoride (NF 3 ), sulfur hexafluoride (SF 6 ), chlorine trifluoride (ClF 3 ), oxygen (O 2 ), and the like.
對於真空泵系統100的清洗,可在從真空腔室接收清洗氣體的清洗步驟中進行。那麼就會從電漿產生氟自由基、氯自由基及氧自由基中的至少一種。這些自由基透過真空管20擴散到前端泵浦10和後端泵浦30的轉子11、31,與旋轉的轉子11、31的表面均勻地接觸,從而清洗轉子11、31表面。此時,由於電子的擴散,清洗能力進一步提高。The cleaning of the
對於第一實施例的真空泵系統100,無需停止真空腔室的運轉,在真空腔室的清洗步驟中產生電漿以清洗轉子11、31,而且不會因離子轟擊而導致轉子11、31受損。因此,可以增加前端泵浦10和後端泵浦30的使用壽命和維修週期,還可以縮短維修導致的真空腔室的暫停期。For the
第4圖係根據本發明的第二實施例的遠端電漿裝置的結構圖。Fig. 4 is a structural diagram of a remote plasma device according to the second embodiment of the present invention.
參見第4圖,第二實施例的遠端電漿裝置120包含用於注入清洗氣體的至少一個第三開口70。第三開口70位於比高壓電極60更遠離真空管20的位置上,透過第三開口70注入的清洗氣體經過整個電漿區域PA分解成自由基。Referring to FIG. 4, the
第三開口70可位於絕緣體50上或者預先加工有第三開口70的金屬管部71可結合在絕緣體50的第二管狀部51和端蓋部52之間。第3圖中例示出了第二種情形。第三開口70可沿金屬管部71的圓周方向設置多個。The
清洗氣體作為包含氟、氯或氧的氣體,可包含與真空腔室的清洗氣體相同的三氟化氮(NF3
)、六氟化硫(SF6
)、三氟化氯(ClF3
)及氧氣(O2
)。透過第三開口70注入的清洗氣體被電漿分解成氟自由基、氯自由基及氧自由基等,並經過真空管20向轉子11、31(參見第1圖)擴散。The cleaning gas, as a gas containing fluorine, chlorine or oxygen, can include nitrogen trifluoride (NF 3 ), sulfur hexafluoride (SF 6 ), chlorine trifluoride (ClF 3 ) and the same cleaning gas as the vacuum chamber cleaning gas. Oxygen (O 2 ). The cleaning gas injected through the
對於第二實施例的遠端電漿裝置120,透過增加向轉子11、31擴散的自由基的數量,可提高轉子11、31的清洗效率。除了第三開口70之外,第二實施例的遠端電漿裝置120與前述的第一實施例相同或類似,因此省略重複的描述。For the
第5圖係根據本發明的第三實施例的遠端電漿裝置的結構圖。Figure 5 is a structural diagram of a remote plasma device according to a third embodiment of the present invention.
參見第5圖,在第三實施例的遠端電漿裝置130中,第三開口70位於比高壓電極60更靠近真空管20的位置上,透過第三開口70注入的清洗氣體經過部分電漿區域PA分解成自由基。Referring to Figure 5, in the
第三開口70可位於接地電極40的第一管狀部43上,並且可沿第一管狀部43的圓周方向設置多個。透過第三開口70注入的清洗氣體被電漿分解成氟自由基、氯自由基及氧自由基等,並經過真空管20向轉子11、31擴散。The
除了第三開口70的位置之外,第三實施例的遠端電漿裝置130與前述的第一實施例相同或類似,因此省略重複的描述。Except for the position of the
第6圖係根據本發明的第四實施例的遠端電漿裝置的結構圖。Fig. 6 is a structural diagram of a remote plasma apparatus according to a fourth embodiment of the present invention.
參見第6圖,在第四實施例的遠端電漿裝置140中,接地電極40的限制部42的面向高壓電極60側形成為傾斜面44。傾斜面44具有限制部42的厚度t離第二開口41越遠越大的傾斜度。Referring to FIG. 6, in the
流入遠端電漿裝置140的製程氣體排向後端泵浦30側,但固態或液態的製程副產物會積聚在遠端電漿裝置140內部。限制部42的傾斜面44的功能係將製程副產物的流入抑制在遠端電漿裝置140的內部空間,同時提高電漿中產生的電子和自由基的擴散力。The process gas flowing into the
除了限制部42的形狀之外,第四實施例的遠端電漿裝置140與前述的第一實施例至第三實施例中任何一個實施例相同或類似。第6圖中例示出了作為基本結構包含第二實施例的結構的情形。Except for the shape of the restricting
第7圖係根據本發明的第五實施例的遠端電漿裝置的結構圖。Fig. 7 is a structural diagram of a remote plasma apparatus according to a fifth embodiment of the present invention.
參見第7圖,在第五實施例的遠端電漿裝置150中,接地電極40的第一管狀部43直接固定在真空管20的外壁上,限制部42與第一管狀部43的兩側端部(第一端部和第二端部)保持距離位於第一管狀部43的內側。限制部42可位於比第一管狀部43的第二端部更靠近第一端部的位置上。Referring to Fig. 7, in the
真空管20的第一開口21可具有與第一管狀部43的內徑相同的直徑。從第一管狀部43的第一端部朝第二端部隔開的限制部42的功能與第四實施例的傾斜面相同。也就是說,所述限制部42的功能係將製程副產物的流入抑制在遠端電漿裝置150的內部空間,同時提高電漿中產生的電子和自由基的擴散力。The
除了接地電極40的形狀之外,第五實施例的遠端電漿裝置150與前述的第一實施例至第三實施例中任何一個實施例相同或類似。第7圖中例示出了作為基本結構包含第二實施例的結構的情形。Except for the shape of the
第8圖係根據本發明的第六實施例的遠端電漿裝置的結構圖。Fig. 8 is a structural diagram of a remote plasma apparatus according to the sixth embodiment of the present invention.
參見第8圖,在第六實施例的遠端電漿裝置160中,接地電極40的限制部42的面向高壓電極60側形成為傾斜面44。傾斜面44具有限制部42的厚度t離第二開口41越遠越大的傾斜度。Referring to FIG. 8, in the
透過從第一端部朝第二端部隔開的限制部42的位置和限制部42所具有的傾斜面44,第六實施例的遠端電漿裝置160可實現比前述的第四實施例和第五實施例的結構提高的功能(防止製程副產物的流入以及加強電子和自由基的擴散力)。Through the position of the restricting
除了限制部42的傾斜面44之外,第六實施例的遠端電漿裝置160與前述的第五實施例相同或類似,因此省略重複的描述。Except for the
第9圖係根據本發明的第七實施例的遠端電漿裝置的結構圖。Fig. 9 is a structural diagram of a remote plasma apparatus according to a seventh embodiment of the present invention.
參見第9圖,在第七實施例的遠端電漿裝置170中,高壓電極60係螺旋纏繞於絕緣體的第二管狀部51的線圈型電極,電源61係向高壓電極60施加高頻電壓的高頻電源。高壓電極60作為螺旋型天線,將感應電動勢傳遞到絕緣體50內部,從而產生感應耦合電漿(Inductively Coupled Plasma,ICP)。Referring to Figure 9, in the
通常,CCP因低頻驅動而具有低電流-高電壓特性以及電子溫度高且電子密度低的特性。另外,CCP的放電穩定性高,但是根據壓力變化的電漿沿絕緣體50半徑方向的密度變化和電漿沿絕緣體50長度方向的長度變化較大。也就是說,電漿密度和電漿長度的壓力依賴性較高。Generally, CCP has low current-high voltage characteristics due to low frequency driving, as well as high electron temperature and low electron density. In addition, the discharge stability of CCP is high, but the density change of the plasma along the radial direction of the
相比之下,ICP因高頻驅動而具有高電流-低電壓特性以及電子溫度低且電子密度高的特性。另外,ICP的放電穩定性低且電漿運行區域(壓力範圍)較窄,但是根據壓力變化的電漿密度變化和電漿長度變化較少。也就是說,電漿密度和電漿長度的壓力依賴性較低。In contrast, ICP has high current-low voltage characteristics due to high frequency driving, as well as low electron temperature and high electron density. In addition, the discharge stability of the ICP is low and the plasma operating region (pressure range) is narrow, but the plasma density change and the plasma length change according to the pressure change are small. That is, the pressure dependence of plasma density and plasma length is low.
根據前端泵浦10和後端泵浦30的操作條件,可選用產生CCP的遠端電漿裝置和產生ICP的遠端電漿裝置中的任何一種裝置。According to the operating conditions of the front-
除了高壓電極60為線圈型電極之外,第七實施例的遠端電漿裝置170與前述的第一實施例至第六實施例中任何一個實施例相同或類似,因此省略重複的描述。第9圖中例示出了作為基本結構包含第二實施例的結構的情形。Except that the high-
第10圖係根據本發明的第八實施例的遠端電漿裝置的結構圖。Fig. 10 is a structural diagram of a remote plasma apparatus according to an eighth embodiment of the present invention.
參見第10圖,在第八實施例的遠端電漿裝置180中,絕緣體50和高壓電極60形成為板狀。Referring to FIG. 10, in the
接地電極40由第一管狀部43和限制部42組成,圓盤形狀的絕緣體50結合於第一管狀部43的第二端部(以圖式為準右側端部),從而密封第二端部。高壓電極60也可以係圓盤形狀,與第一管狀部43的第二端部保持距離位於絕緣體50的外表面上。The
遠端電漿裝置180的內部空間被定義為由限制部42和第一管狀部43及絕緣體50圍繞而成的空間。當施加驅動電壓時,高壓電極60透過與接地電極40的電壓差來產生電容耦合電漿(CCP)到遠端電漿裝置180的內部空間。The internal space of the
用於注入清洗氣體的至少一個第三開口70可位於第一管狀部43。第三開口70位於比限制部42更靠近絕緣體50的位置上,透過第三開口70注入的清洗氣體經過大部分電漿區域PA分解成自由基。At least one
第10圖中例示出了接地電極40與第一實施例的接地電極相同的情形,但是不限於這些示例。接地電極40可具有與前述的第四實施例至第六實施例中任何一個實施例的接地電極相同或類似的結構。FIG. 10 illustrates the case where the
第11圖係根據本發明的第九實施例的遠端電漿裝置的結構圖,第12圖係第11圖所示的限制部的右側視圖。FIG. 11 is a structural diagram of a remote plasma apparatus according to a ninth embodiment of the present invention, and FIG. 12 is a right side view of the restricting portion shown in FIG. 11.
參見第11圖和第12圖,在第九實施例的遠端電漿裝置190中,限制部42的第二開口41由沿虛擬圓(第12圖中用虛線表示)排列的至少兩個圓弧狀(arc type)開口411、412組成。Referring to FIGS. 11 and 12, in the
至少兩個圓弧狀開口411、412可以係一個環狀開口分成n個(n為2或更大的自然數)的形狀。例如,至少兩個圓弧狀開口411、412可以係將一個環狀開口分成二等分、三等分或四等分的形狀,並且都具有相同的周長。The at least two arc-shaped
第12圖中例示出了第二開口41由具有彼此相同的形狀和尺寸的兩個圓弧狀開口411、412組成的情形。Fig. 12 illustrates a case where the
第二開口41的整體面積小於製程氣體流過的真空管20內部空間的截面積(真空管內徑的一半為r時,就是πr2
)。在此情況下,透過抑制製程副產物流入和積聚於遠端電漿裝置190,可以產生穩定的電漿。The overall area of the
第九實施例的遠端電漿裝置190可具有用於注入清洗氣體的第三開口70,所述第三開口70位於比高壓電極60更遠離真空管20的位置上。透過第三開口70注入的清洗氣體經過整個電漿區域PA分解成自由基。The
除了第二開口41的形狀之外,第九實施例的遠端電漿裝置190與前述的第五實施例相同或類似,因此省略重複的描述。Except for the shape of the
第13圖係根據本發明的第十實施例的遠端電漿裝置的結構圖。Fig. 13 is a structural diagram of a remote plasma apparatus according to the tenth embodiment of the present invention.
參見第13圖,在第十實施例的遠端電漿裝置200中,第三開口70位於比高壓電極60更靠近真空管20的位置上。在此情況下,透過第三開口70注入的清洗氣體經過部分電漿區域PA分解成自由基,然後擴散到真空管20。Referring to FIG. 13, in the
第三開口70可位於接地電極40的第一管狀部43,並且位於比限制部42更靠近高壓電極60的位置上。除了第三開口70的位置之外,第十實施例的遠端電漿裝置200與前述的第九實施例相同或類似,因此省略重複的描述。The
第14圖係根據本發明的第十一實施例的遠端電漿裝置的結構圖。Figure 14 is a structural diagram of a remote plasma apparatus according to an eleventh embodiment of the present invention.
參見第14圖,在第十一實施例的遠端電漿裝置210中,高壓電極60係螺旋纏繞於絕緣體50的第二管狀部51的線圈型電極,將感應電動勢傳遞到絕緣體50內部,從而產生感應耦合電漿(ICP)。Referring to Fig. 14, in the
除了高壓電極60為線圈型電極之外,第十一實施例的遠端電漿裝置210與前述的第九實施例或第十實施例相同或類似,因此省略重複的描述。第14圖中例示出了作為基本結構包含第九實施例的結構的情形。Except that the high-
第15圖係根據本發明的第十二實施例的遠端電漿裝置的結構圖。Figure 15 is a structural diagram of a remote plasma apparatus according to a twelfth embodiment of the present invention.
參見第15圖,在第十二實施例的遠端電漿裝置220中,絕緣體50和高壓電極60形成為板狀。圓盤形狀的絕緣體50結合於第一管狀部43的第二端部,從而密封第二端部。圓盤形狀的高壓電極60與第一管狀部43的第二端部保持距離位於絕緣體50的外表面上。Referring to Fig. 15, in the
用於注入清洗氣體的至少一個第三開口70可位於第一管狀部43。第三開口70位於比限制部42更靠近絕緣體50的位置上。透過第三開口70注入的清洗氣體經過大部分電漿區域PA分解成自由基,然後擴散到真空管20。At least one
上面描述了本發明的較佳實施例,但是本發明不限於上述實施例,在申請專利範圍和說明書及圖式範圍內能夠以各種方式變形實施,這些變形理所當然落入本發明的範圍。The preferred embodiments of the present invention are described above, but the present invention is not limited to the above-mentioned embodiments, and can be implemented in various ways within the scope of the patent application, specification and drawings, and these modifications naturally fall within the scope of the present invention.
100‧‧‧真空泵系統
110、120、130、140、150、160、170、180、190、200、210、220‧‧‧遠端電漿裝置
10‧‧‧前端泵浦
20‧‧‧真空管
21‧‧‧第一開口
30‧‧‧後端泵浦
40‧‧‧接地電極
41‧‧‧第二開口
42‧‧‧限制部
43‧‧‧第一管狀部
50‧‧‧絕緣體
51‧‧‧第二管狀部
52‧‧‧端蓋部
60‧‧‧高壓電極
61‧‧‧電源
70‧‧‧第三開口100‧‧‧
第1圖係根據本發明的第一實施例的真空泵系統的結構圖。 第2圖係第1圖所示的遠端電漿裝置的放大圖。 第3圖係第1圖所示的遠端電漿裝置的立體圖。 第4圖係根據本發明的第二實施例的遠端電漿裝置的結構圖。 第5圖係根據本發明的第三實施例的遠端電漿裝置的結構圖。 第6圖係根據本發明的第四實施例的遠端電漿裝置的結構圖。 第7圖係根據本發明的第五實施例的遠端電漿裝置的結構圖。 第8圖係根據本發明的第六實施例的遠端電漿裝置的結構圖。 第9圖係根據本發明的第七實施例的遠端電漿裝置的結構圖。 第10圖係根據本發明的第八實施例的遠端電漿裝置的結構圖。 第11圖係根據本發明的第九實施例的遠端電漿裝置的結構圖。 第12圖係第11圖所示的限制部的右側視圖。 第13圖係根據本發明的第十實施例的遠端電漿裝置的結構圖。 第14圖係根據本發明的第十一實施例的遠端電漿裝置的結構圖。 第15圖係根據本發明的第十二實施例的遠端電漿裝置的結構圖。Fig. 1 is a structural diagram of the vacuum pump system according to the first embodiment of the present invention. Figure 2 is an enlarged view of the remote plasma device shown in Figure 1. Figure 3 is a perspective view of the remote plasma device shown in Figure 1. Fig. 4 is a structural diagram of a remote plasma device according to the second embodiment of the present invention. Figure 5 is a structural diagram of a remote plasma device according to a third embodiment of the present invention. Fig. 6 is a structural diagram of a remote plasma apparatus according to a fourth embodiment of the present invention. Fig. 7 is a structural diagram of a remote plasma apparatus according to a fifth embodiment of the present invention. Fig. 8 is a structural diagram of a remote plasma apparatus according to the sixth embodiment of the present invention. Fig. 9 is a structural diagram of a remote plasma apparatus according to a seventh embodiment of the present invention. Fig. 10 is a structural diagram of a remote plasma apparatus according to an eighth embodiment of the present invention. Fig. 11 is a structural diagram of a remote plasma apparatus according to a ninth embodiment of the present invention. Figure 12 is a right side view of the restricting portion shown in Figure 11. Fig. 13 is a structural diagram of a remote plasma apparatus according to the tenth embodiment of the present invention. Figure 14 is a structural diagram of a remote plasma apparatus according to an eleventh embodiment of the present invention. Figure 15 is a structural diagram of a remote plasma apparatus according to a twelfth embodiment of the present invention.
110‧‧‧遠端電漿裝置 110‧‧‧Remote Plasma Device
20‧‧‧真空管 20‧‧‧Vacuum tube
21‧‧‧第一開口 21‧‧‧First opening
40‧‧‧接地電極 40‧‧‧Ground electrode
41‧‧‧第二開口 41‧‧‧Second opening
42‧‧‧限制部 42‧‧‧Restriction Department
43‧‧‧第一管狀部 43‧‧‧First tubular part
50‧‧‧絕緣體 50‧‧‧Insulator
51‧‧‧第二管狀部 51‧‧‧Second Tubular Section
52‧‧‧端蓋部 52‧‧‧End cover
60‧‧‧高壓電極 60‧‧‧High voltage electrode
61‧‧‧電源 61‧‧‧Power
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