TWI740227B - Methods, apparatus, and system for high-bandwidth on-mold antennas - Google Patents

Abstract

A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

Description

Method, equipment and system for antenna on high frequency and wide mode

The present invention generally relates to the manufacture of precision semiconductor devices, and more particularly, it relates to various methods and systems for providing radio frequency (RF) antennas for semiconductor devices.

The technological explosion of the manufacturing industry has led to many novel and innovative product processes. The so-called millimeter wave (mm-wave) applications include devices based on the radio frequency band operating in the electromagnetic spectrum frequency range between about 30 gigahertz (GHz) and about 300 GHz. Some applications, such as 5G communications and Internet of Things (IoT) applications, can operate at frequencies below 30 GHz, such as about 28 GHz. The millimeter-wave radio frequency wave has a wavelength between about 1 millimeter (mm) and about 10 millimeters, which corresponds to a radio frequency of 30 GHz to about 300 GHz. This frequency band is sometimes referred to as the extremely high frequency (EHF) band range.

When implementing 5G and IoT applications, many challenges arise when designing circuits for these applications. EHF applications require a transmission path with no discontinuity and low loss. They also benefit from antennas that are tightly integrated with other components. However, the tight integration of the antenna with other components usually results in a low antenna bandwidth. A typical on-die antenna has an efficiency of about 30% and a gain of about 3dBi.

The present invention can cope with and/or at least reduce one or more of the above-mentioned problems.

The following presents a simplified summary of the present invention to provide a basic understanding of some aspects of the present disclosure. This summary is not an exhaustive overview of the invention. It is not intended to identify key or important elements of the invention or to describe the scope of the invention. The sole purpose is to present some concepts in a brief form as a prelude to the more detailed description below.

In a specific embodiment, the present invention relates to a semiconductor device, which includes: a semiconductor layer including a first surface and a second surface; a polymer layer including a first surface and a second surface, wherein the polymer layer The first surface is close to the second surface of the semiconductor layer; the mold includes a first surface and a second surface, wherein the first surface of the mold is close to the second surface of the polymer layer; a plurality of nodes, Disposed near the first surface of the semiconductor layer; antenna disposed on the second surface of the mold; first conductive element providing electrical communication between at least one first node and the antenna; grounding element disposed In the polymer layer or on the second surface of the polymer layer; and a second conductive element providing electrical communication between at least one second node and the ground element.

In a specific embodiment, the present invention relates to a device including a plurality of semiconductor devices, wherein each semiconductor device is one of the foregoing, and wherein a first subset of the semiconductor devices is configured as a receiver antenna Array, the second subset of the semiconductor devices is configured as a transmitter antenna array, or both.

In a specific embodiment, the present invention relates to a method including: forming a semiconductor layer including a first surface and a second surface; forming a polymer layer including the first surface and the second surface, wherein the polymer The first surface of the layer is close to the second surface of the semiconductor layer; Forming a mold including a first surface and a second surface, wherein the first surface of the mold is close to the second surface of the polymer layer; forming a plurality of nodes disposed close to the first surface of the semiconductor layer; forming a setting An antenna on the second surface of the mold; forming a first conductive element that provides electrical communication between at least one first node and the antenna; forming a first conductive element disposed in the polymer layer or on the polymer layer A ground element on the second surface; and a second conductive element that provides electrical communication between at least one second node and the ground element.

However, without being limited to theory, the semiconductor device and equipment of the present invention may have a bandwidth of about 15-30% at an operating frequency of about 28 GHz.

100: System, communication device

110: Millimeter wave device, communication device

120: Communication front-end unit, communication unit

130: antenna unit

140: Controller unit

150: signal processing unit

170: database

180: motor controller

210: memory unit

212: RAM

214: Non-volatile memory

220: Logic Unit

230: processor unit

310: signal generating unit

320: conveyor unit, conveyor unit

330: receiver unit

340: signal processing unit

410a-410n: teleporter

510a-510n: receiver

610: analog filter unit

620: A/D converter

630: DSP unit

640: memory

710: Transmission antenna, transmitter antenna

715: Transmission antenna part, transmitter antenna part

720: receiving antenna, receiver antenna

725: receiving antenna part, receiver antenna part

730: first device

731: second device

735: semiconductor device

736: Semiconductor Device

910: semiconductor layer, wafer

912: first surface

914: second surface

920: polymer layer

921: The first polymer sublayer

922: first surface

923: second polymer sublayer

924: second surface

925: second polymer layer

930: Mould

932: first surface

934: second surface

942: node, second node

944: node, first node

946: node, third node

950: Antenna

961: first conduction sublayer

962: first conductive element

963: second conduction sublayer

964: second conductive element

965: Through Hole Strip

966: third conductive element

970: Grounding element

980: Radio Frequency (RF) Filter

990: oxide layer

995: second oxide layer

1026: Sacrificial carrier layer

1111: groove

1427: location

1567: location

1867: Through hole opening

2162: The first conductive element

2250: Antenna

2270: Grounding element, second grounding element

2275: Through hole cage

2277: Ring

2363: second conduction sublayer

2667: Through hole opening

2900: method

2910-2991: steps

3000: System

3010: Semiconductor device processing system, processing system

3015: Integrated circuit/device, object

3016: Weights and Measures Tools

3020: Processing Controller

3040: Integrated Circuit Design Unit

3050: handling mechanism

The present invention can be understood by referring to the following description in conjunction with the accompanying drawings, in which similar components are represented by the same component symbols, and among them:

Figure 1 illustrates a non-realistic block diagram representing a communication system according to several specific embodiments in this document;

Figure 2 illustrates a non-realistic block diagram of the controller unit 140 according to several specific embodiments herein;

Figure 3 illustrates a non-realistic block diagram of the communication front-end unit of Figure 1 according to several specific embodiments in this document;

Fig. 4 illustrates a non-realistic block diagram of the transmitter unit of Fig. 3 according to several specific embodiments herein;

Fig. 5 illustrates a non-realistic block diagram of the receiver unit of Fig. 3 according to several specific embodiments herein;

Fig. 6 illustrates a non-realistic block diagram of the signal processing unit of Fig. 1 according to several specific embodiments herein;

Fig. 7 depicts a non-realistic block diagram of the antenna unit of Fig. 1 according to several specific embodiments herein;

FIG. 8 illustrates a non-realistic far view plan view of a first device including a plurality of semiconductor devices each including an antenna according to a specific embodiment of this document;

Fig. 9 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device depicted in Fig. 8 according to several specific embodiments herein;

FIG. 10 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIGS. 8 to 9 after the first manufacturing stage according to the first specific embodiment;

FIG. 11 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 10 after the second manufacturing stage according to the first specific embodiment;

FIG. 12 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 11 after the third manufacturing stage according to the first specific embodiment;

FIG. 13 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 12 after the fourth manufacturing stage according to the first specific embodiment;

FIG. 14 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 13 after the fifth manufacturing stage according to the first specific embodiment;

FIG. 15 illustrates a non-realistic X-section cross-sectional view of the semiconductor device in FIG. 8 to FIG. 14 after the sixth manufacturing stage according to the first specific embodiment;

FIG. 16 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 15 after the seventh manufacturing stage according to the first specific embodiment;

FIG. 17 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 16 after the eighth manufacturing stage according to the first specific embodiment;

FIG. 18 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 17 after the ninth manufacturing stage according to the first embodiment;

FIG. 19 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 18 after the tenth manufacturing stage according to the first specific embodiment;

FIG. 20 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 8 to FIG. 19 after the eleventh manufacturing stage according to the first embodiment;

FIG. 21 illustrates a non-realistic far view plan view of a second device including a plurality of semiconductor devices each containing an antenna according to the second specific embodiment of this document;

FIG. 22 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device depicted in FIG. 21 according to several specific embodiments herein;

FIG. 23 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 22 after the first manufacturing stage according to the second embodiment;

FIG. 24 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 23 after the second manufacturing stage according to the second embodiment;

FIG. 25 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 24 after the third manufacturing stage according to the second embodiment;

FIG. 26 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 25 after the fourth manufacturing stage according to the second embodiment;

FIG. 27 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 26 after the fifth manufacturing stage according to the second embodiment;

FIG. 28 illustrates a non-realistic X-sectional cross-sectional view of the semiconductor device in FIG. 21 to FIG. 27 after the sixth manufacturing stage according to the second embodiment;

Figure 29 provides a flowchart depicting a method for manufacturing a semiconductor device according to several specific embodiments herein; and

FIG. 30 illustrates a non-realistic drawing of a system for manufacturing a semiconductor device according to several specific embodiments herein.

Although the patented subject matter disclosed herein is easy to make various modifications and alternative forms, this article still uses the accompanying drawings as an example to illustrate several specific embodiments of the present invention and are described in detail herein. However, it should be understood that the specific embodiments described herein are not intended to limit the present invention to the specific forms disclosed herein, but to cover the spirit and scope of the present invention as defined by the scope of the appended application. All modifications, equivalents and alternative statements of.

Various exemplary specific embodiments of the present invention are described below. For clarity, the specification of the present invention does not describe all the features of the actual implementation. Of course, it should be understood that when developing any such actual specific embodiment, many decisions related to the specific implementation must be made to achieve the specific goals of the developer, such as complying with system-related and business-related restrictions. It is different for each specific implementation. In addition, it should be understood that such development work may be complicated and time-consuming, but for those skilled in the art, it is a routine work that can be undertaken after reading the present invention.

The subject of the present invention will now be described with reference to the accompanying drawings. The various structures, systems and devices schematically shown in the drawings are for explanation purposes only and to avoid confusion with the details that are familiar to those who are familiar with the art. invention. Nonetheless, the drawings are included to describe and explain exemplary embodiments of the present invention. The vocabulary and phrases used in this article should be understood and explained in a manner consistent with the meaning familiar to the relevant art and technical personnel. Terms or phrases not specifically defined herein (that is, definitions that are different from the common and usual meaning understood by those familiar with the art) are intended to be explained by consistent usage of the terms or phrases. If a term or phrase is intended to have a specific meaning (that is, different from the meaning understood by those familiar with the art), it will be clearly stated that the term or phrase is provided in a straightforward manner in the specification of the present invention Specific definition.

The specific embodiments herein can be used for both radio frequency (RF) and millimeter wave integrated antennas with improved bandwidth in the package.

For ease of illustration, the specific embodiments of this document are described in the context of a communication device. However, those familiar with the art should understand that the concepts disclosed in this document can be implemented in other types of devices, such as high-speed communication devices, network devices, etc. Wait. At this time, please refer to Figure 1, which is a non-realistic block diagram of a communication system according to several specific embodiments in this document.

The system 100 may include a millimeter wave device 110, a database 170, and a motor controller 180. The millimeter wave device 110 may be a radar device, a wireless communication device, a data network device, a video device, or the like. For illustration, clarity and ease of description, the millimeter wave device 110 is described in the context of communication applications. Therefore, the millimeter wave device 110 may often be referred to as the communication device 110 in the following. However, those skilled in the art who benefit from the content of the present invention should understand that the concepts described in this article can be applied to various types of millimeter wave applications, including vehicle applications that use radar signals, wireless network applications, data network applications, and audio-visual applications. and many more.

The communication device 110 can transmit communication signals and/or receive communication signals.

The communication device 110 may include a communication front-end unit 120, an antenna unit 130, a controller unit 140, and a signal processing unit 150. The communication front-end unit 120 may include a plurality of components, circuits, and/or modules, and can send, receive, and/or process communication signals. In a specific embodiment, the communication device 110 may be included in a single integrated circuit (IC) chip. In some embodiments, the communication device 110 may be formed on a plurality of integrated circuits on a single IC chip. In other embodiments, the communication device 110 may be formed on a single integrated circuit wrapped in an IC chip. In some examples, the communication front-end unit 120 may be referred to as the communication unit 120 for short.

The communication front-end unit 120 can provide communication signals. In a specific embodiment, the frequency range of the communication signal processed by the communication device 110 may be between about 10 GHz and about 90 GHz. The communication front-end unit 120 can generate communication signals within a predetermined frequency range. The device 110 can process network communication for various communication applications, such as packet data network communication, wireless (for example, cellular communication, IEEE 802.11ad WiGig technology, etc.), data communication, and so on. The concepts disclosed in this article in the context of communication applications can also be used in other types of applications, such as radar, wireless communication, high-resolution video, and so on.

Continuing to refer to Figure 1, the antenna unit 130 may also include a transmitting antenna and/or a receiver antenna. In addition, the transmit and receiver antennas may each include subsections forming an antenna array. The transmitting antenna is used for transmitting communication signals, and the receiver antenna is used for receiving communication signals. A more detailed description of the antenna unit 130 is provided in Figure 7 and the accompanying description below.

Continuing to refer to FIG. 1, the communication device 110 may also include a signal processing unit 150. The signal processing unit 150 can perform various analog and/or digital processing of signals transmitted and/or received by the communication device 110. For example, the communication signal transmitted by the communication device can be amplified before transmission. In addition, the signal received by the communication device 110 can be passed through one or more analog filter stages (analog filter stage). Then, one or more analog-to-digital converters (DAC) in the signal processing unit 150 can be used to convert the reflected signal into a digital signal. It can perform digital signal processing (DSP) on the digitized signal. A more detailed description of the signal processing unit 150 is provided in FIG. 6 and the accompanying description below.

Continuing to refer to FIG. 1, the communication device 100 may also include a controller unit 140. The controller unit 140 can perform various control operations of the communication device 110. These functions include generating communication signals, transmitting communication signals, receiving communication signals, and/or processing reflected signals.

At this time, please refer to FIG. 2, which provides a non-realistic block diagram describing the controller unit 140 according to several specific embodiments herein. The controller unit 140 may include a processor unit 230 capable of controlling various functions of the communication device 110. The processor unit 230 may include a microprocessor, a microcontroller, a field programmable gate array (FPGA), an application-specific integrated circuit (ASIC), and/or the like.

The controller unit 140 may also include a logic unit 220. The logic unit 220 may include circuits capable of performing various logic operations, receiving data, and performing interface functions related to input data (data_in) and output data (data_out). The signal data_in can represent the data derived from processing and analyzing the reflected signal. The signal data_out may represent the data generated by the communication signal transmission and reception signal for performing one or more tasks. For example, the signal data_out can be used to perform actions based on communication signal transmission and/or reception.

The controller unit 140 may also include a memory unit 210. The memory unit 210 may include a non-volatile memory 214 and a RAM 212. The non-volatile memory 214 may include FLASH memory and/or a programmable read-only (PROM) device. The memory unit 210 can store operating parameters for controlling the operation of the communication device 110. In addition, the memory unit 210 can store the aforementioned status data and response data. The memory unit 210 can also store and can be used for programmatic communication Data of any FPGA device in the device 110. Therefore, the memory unit 210 can be subdivided into program data memory, state data memory, and so on. This subdivision can be performed logically or physically.

At this time, please refer to FIG. 3, which illustrates a non-realistic block diagram of the communication front-end unit 120 according to several specific embodiments herein. The communication front-end unit 120 may include a signal generating unit 310, a transmitter unit 320, a signal processing unit 340, and a receiver unit 330. The signal generating unit 310 can generate a communication signal at a predetermined frequency. For example, a signal in the range of about 70 GHz to about 85 GHz can be generated. The signal generating unit 310 may include a true differential frequency multiplier (FD). The FD can be formed in a push-push configuration. The signal generating unit 310 can provide a communication signal for transmission. A more detailed description of the signal generating unit 310 is provided below.

Continuing to refer to FIG. 3, the signal for processing and transmission is provided by the signal generating unit 310 to the transmitter unit 320. The transmitter unit 320 may include a plurality of filters, signal conditioning circuits, buffers, amplifiers, etc., to process the signal from the signal generating unit 310. The transmitting unit 320 provides a communication signal to be transmitted to the antenna unit 130.

FIG. 4 illustrates a non-realistic block diagram of the transmitter unit 320 according to several specific embodiments herein. Please refer to FIGS. 3 and 4 at the same time. The transmitter unit 320 may include a plurality of similar transmitters, that is, the first transmitter 410a, the second transmitter 420b to the Nth transmitter 410n (collectively referred to as "410"). ). In a specific embodiment, the first to Nth transmitters 410 can each process a single signal from the signal generating unit 310 and provide output transmission signals to one or more antennas. In another specific embodiment, the signal generating unit 310 can provide a plurality of signals to the first to Nth transmitters 410. For example, the signal generating unit 310 can provide a signal transmission signal to each transmitter 410, or alternatively, provide the first transmission signal to the first group of transmitters 410 and provide the second transmission signal to the second group of transmitters 410.

Continuing to refer to FIG. 3, the receiving signal is provided to the receiver unit 330. The receiver unit 330 can receive the pre-processed received signal from the signal processing unit 150. The receiver unit 330 can perform analog-to-digital (A/D) conversion, signal buffering, DSP, and so on. In some specific embodiments, the signal processing unit 150 may perform A/D conversion and DSP; however, in other specific embodiments, these tasks may be performed by the receiver unit 330. The receiver unit 330 can be directed to the controller unit 140.

FIG. 5 illustrates a non-realistic block diagram of the receiver unit 330 according to several specific embodiments herein. Please refer to FIGS. 3 and 5 at the same time. The receiver unit 330 may include a plurality of similar receivers, that is, the first receiver 510a, the second receiver 520b to the Nth receiver 510n (collectively referred to as "510"). ). In a specific embodiment, the first to Nth receivers 510 can each process a single signal from the signal generating unit 310 and provide the signal to the controller unit 140. In another specific embodiment, a plurality of signals may be provided to the first to Nth receivers 510. For example, the signal processing unit 150 may provide the signal reception signal to each receiver 510, or alternatively, provide the first receiver signal to the first set of receivers 510 and provide the second receiver signal to the second set of receivers 510.

At this time, please refer to FIG. 6, which illustrates a non-realistic block diagram of the signal processing unit 150 according to several specific embodiments herein. The signal processing unit 150 may include an analog filter unit 610, an A/D converter 620, a DSP unit 630, and a memory 640. The analog filter unit 610 can perform down-converting the millimeter wave signal received by the signal processing unit 150 Filtering and amplification of analog signals. Before performing amplification of the analog signal down-converted from the millimeter wave signal, the analog filter unit 610 can be used to perform noise filtering.

The A/D converter 620 can convert the filtered and/or amplified analog signal into a digital signal. The A/D converter 620 can perform conversion with a predetermined or different accuracy. For example, the A/D converter 620 can have 12-bit, 24-bit, 36-bit, 48-bit, 64-bit, 96-bit, 128-bit, 256-bit, 512-bit, 1024-bit Accuracy or greater accuracy. The converted digital millimeter wave signal is provided to the DSP unit 630.

The DSP unit 630 can perform various DSP operations for digital millimeter wave signals. For example, the DSP unit 630 can be used to perform digital filtering of the digitized analog signal down-converted from the millimeter wave frequency. For example, signal components outside a predetermined frequency range, such as 70 GHz to about 85 GHz, can be filtered to have a lower amplitude. In other cases, a mathematical method such as Fast Fourier Transform (FFT) can be performed on the millimeter wave signal. The processed digital output from the DSP unit 630 can be sent to the controller unit 140 for analysis. In other cases, the digital output can be buffered or stored in the memory 640. In some examples, the memory 640 may be a first-in first-out (FIFO) memory. In other examples, the processed digital bits from the DSP unit 630 can be stored and output in the memory unit 210 of the controller unit 140.

At this time, please refer to Fig. 7, which illustrates a non-realistic block diagram of the antenna unit of Fig. 1 according to several specific embodiments in this document. The transmitter unit 320 (FIG. 3) can provide millimeter wave signals (for example, radar signals, network data signals, wireless communication signals, etc.) to be sent to the transmitting antenna 710. In a specific embodiment, the transmitting antenna 710 may include a plurality of transmitting antenna parts 715. The transmitting antenna parts 715 may be arranged in a predetermined pattern, for example, the array matrix illustrated in FIG. 7.

The millimeter wave signal to be received (for example, radar signal, network data signal, wireless communication signal, etc.) can be captured by the receiving antenna 720. The receiving antenna 720 provides the received millimeter wave signal to the receiver unit 330 (Figure 3). In a specific embodiment, the receiving antenna 720 may include a plurality of receiving antenna parts 725. The receiving antenna portions 725 are also arranged in a predetermined pattern, for example, the array matrix illustrated in FIG. 7.

FIG. 8 illustrates a non-realistic far view plan view of the first device 730 according to a specific embodiment of this document, which includes a plurality of semiconductor devices 735 each containing an antenna 950. Each of the semiconductor devices 735 can correspond to the transmitter antenna portion 715 or the receiver antenna portion 725 shown in the block diagram of FIG. 7. The first device 730 may correspond to the transmitter antenna 710, the receiver antenna 720, or a combination thereof shown in the block diagram of FIG. 7.

The plan view in FIG. 8 illustrates the antenna 950 and the mold 930 which will be described in more detail below. The shape of the antenna 950 in the plan view is not critical, and may be different from the E shape in FIG. 8 according to the routine work requirements of those skilled in the art. In order to illustrate the position where the radio frequency (RF) filter 980 is disposed in the mold 930, the plan view is a far view, which will be described in more detail below.

A plurality of semiconductor devices 735 can be configured to receive radio frequency (RF) signals of specific frequencies, such as communication signals. Due to this specific frequency, the RF signal to be received will also have a specific wavelength λ. Therefore, in a specific embodiment, the semiconductor device 735 may be arranged in the first device 730 so that the antenna 950 adjacent to the semiconductor device 735 is separated by an array of half a specific wavelength λ/2. Although not limited to theory, this separation can improve the efficiency, sensitivity, and/or signal-to-noise ratio of the signal collection or propagation of the first device 730.

FIG. 8 also shows the X-section line of the semiconductor device 735 of the first device 730 shown in subsequent drawings. The X-section line bisects the mold 930, the antenna 950, and the RF filter 980.

Please refer to FIG. 9, which illustrates a non-realistic X-section cross-sectional view of the semiconductor device 735 of FIG. 8 according to several specific embodiments herein. The semiconductor device 735 includes a semiconductor layer 910 having a first surface 912 and a second surface 914. The semiconductor layer 910 may include any semiconductor material, such as silicon or silicon-germanium, and so on. When the semiconductor layer 910 includes silicon-germanium, the molar% of germanium can be selected according to the routine work of those skilled in the art who benefit from the content of the present invention.

The semiconductor device 735 also includes a polymer layer 920 having a first surface 922 and a second surface 924. The first surface 922 of the polymer layer 920 is close to the second surface 914 of the semiconductor layer 910. The polymer layer 920 may include any polymer material known in the art. In a specific embodiment, the polymer layer 920 includes polyimide.

The semiconductor device 735 further includes the mold 930 described above. The mold 930 includes a first surface 932 and a second surface 934. The first surface 932 of the mold 930 is close to the second surface 924 of the polymer layer 920. The mold 930 may include any mold material known in the art. In a specific embodiment, the mold 930 includes Ajinomoto MI-11 (Ajinomoto Co., Ltd., Tokyo, Japan).

Those of ordinary skill in the art who benefit from the content of the present invention can change the thickness of the mold 930. In a specific embodiment, the mold 930 has a thickness of about 500 micrometers (μm ) to about 1000 micrometers. In another embodiment, the mold 930 has a thickness of about 750 microns to about 800 microns, for example, about 775 microns.

The semiconductor device 735 additionally includes a plurality of nodes 942, 944, and 946 disposed close to the first surface 912 of the semiconductor layer 910. Each node 942, 944, or 946 includes a conductive material, such as a metal, such as copper or aluminum, or a eutectic solder alloy, or the like.

Although Fig. 9 illustrates three nodes 942, 944, and 946, those skilled in the art who benefit from the content of the present invention can change the number of nodes according to the needs of routine work.

The semiconductor device 735 also includes an antenna 950 disposed on the second surface 934 of the mold 930. The antenna 950 includes a conductive material, such as metal, such as copper or aluminum, and so on.

The first conductive element 962 is included in the semiconductor device 735 to provide electrical communication between the at least one first node 944 and the antenna 950. The RF signal received by the antenna 950 can be provided to other components of the system including the semiconductor device 735 through the first node 944, or the RF signal generated by the other components of the system including the semiconductor device 735 to be transmitted by the antenna 950 can pass through the first node 944 A node 944 is provided to the antenna 950. Although for ease of understanding, the illustration is shown with a uniform width along the entire height, as described below and those of ordinary skill in the art will understand, the first conductive element 962 may have wider and narrower parts, Parts of different materials and so on.

The semiconductor device 735 also includes a ground element 970 disposed in the polymer layer 920 or on the second surface of the polymer layer. The grounding element 970 may include any conductive material, such as metal, such as copper or aluminum. The second conductive element 964 provides electrical communication between the at least one second node 942 and the ground element 970. Although not limited to theory, the ground element 970 can reduce the interference of RF signals received by the antenna 950 through the first node 944 and provided to other components of the system including the semiconductor device 735 or transmitted by the antenna 950 and generated by other components of the system .

In the specific embodiment shown in FIG. 9, for example, the semiconductor device 735 may further include a radio frequency (RF) filter 980 disposed in the mold 930. Alternatively (not shown), the RF filter 980 may be disposed on the second surface 924 of the polymer layer 920. The integration of the RF filter 980 in the die-to-wafer (D2W) process can improve the performance of the device including the semiconductor device 735. Furthermore, as shown in the figure, the semiconductor device 735 may further include: a third conductive element 966 that provides electrical communication between the at least one third node 946 and the RF filter 980. Although Figure 9 only illustrates one conductive element between the node and the RF filter 980 for convenience and brevity, that is, the third conductive element 966 provides electrical power between at least one third node 946 and the RF filter 980. However, in other specific embodiments, the semiconductor device 735 may include two, three, four, or other numbers of nodes and a corresponding number of conductive elements from the nodes to the RF filter 980.

The semiconductor device 735 may also include various layers known to those skilled in the art that can be used in semiconductor devices. For example, the semiconductor device 735 may include a second polymer layer 925 disposed close to the plurality of nodes 942, 944, and 946. The second polymer layer 925 may include a material suitable for use as a substrate of a printed circuit board. The second polymer layer 925 may include, but not necessarily, the same material as the polymer layer 920.

In another embodiment, the semiconductor device 735 may include an oxide layer 990 disposed between the semiconductor layer 910 and the polymer layer 920. The oxide layer 990 may include silicon oxide and may be formed by any conventional technique. Alternatively or additionally, the semiconductor device 735 may include a second oxide layer 995 disposed between the second polymer layer 925 and the semiconductor layer 910.

For the sake of brevity, FIG. 9 may omit one or more structures conventionally incorporated into semiconductor devices by those skilled in the art.

The non-realistic X-sectional cross-sectional view of FIG. 10 illustrates the semiconductor device 735 after the first manufacturing stage according to the first specific embodiment. In the first manufacturing stage, the semiconductor layer 910 is formed, and the second oxide layer 995 can be close to the first surface 912 of the semiconductor layer 910, the second polymer layer 925 is close to the second oxide layer 995, And the sacrificial carrier layer 1026 is close to the second polymer layer 925.

The non-realistic X-sectional cross-sectional view of FIG. 11 illustrates the semiconductor device 735 after the second manufacturing stage according to the first specific embodiment. In the second manufacturing stage, the trench 1111 is etched from the second surface 914 of the semiconductor layer 910 to the first surface 912, thereby exposing the second oxide layer 995. Then, an oxide layer 990 close to the second surface 914 of the semiconductor layer 910 and conformally lining the trench 1111 is deposited. Those of ordinary skill in the art who benefit from the content of the present invention can perform the etching of the trench 1111 and deposit the oxide layer 990 according to routine work using conventional techniques.

The non-realistic X-sectional cross-sectional view of FIG. 12 illustrates the semiconductor device 735 after the third manufacturing stage according to the first specific embodiment. A first polymer sublayer 921 is deposited on the oxide layer 990 and included in the trench 1111. Ideally, the first polymer sublayer 921 is etched at the bottom of the trench 1111 to reveal the die metal on which the first conductive sublayer 961 (shown in FIG. 13) can be placed. The deposition of the first polymer sublayer 921 is routine for those of ordinary skill in the art who benefit from the content of the present invention, and does not need to be detailed.

The non-realistic X-sectional cross-sectional view of FIG. 13 illustrates the semiconductor device 735 after the fourth manufacturing stage according to the first specific embodiment. In the fourth manufacturing stage, the first conductive sublayer 961 is electroplated over the first polymer sublayer 921. A diffusion barrier layer (not shown) may be placed before the electroplating of the first conductive sublayer 961. Before electroplating the first conductive sub-layer 961, a mask (not shown) may be laid on the portion of the first polymer sub-layer 921 overlying the semiconductor layer 910, and then electroplating is performed. Any standard sputtering process can be used to deposit a thin seed layer for electroplating the first conductive sublayer 961 on the first polymer sublayer 921. The mask can then be removed to produce the semiconductor device 735 shown in FIG. 13.

The non-realistic X-sectional cross-sectional view of FIG. 14 illustrates the semiconductor device 735 after the fifth manufacturing stage according to the first specific embodiment. In this manufacturing stage, the second polymer sublayer 923 is deposited over the first conductive sublayer 961. In a position where a mask is used to prevent the plating of the first conductive sublayer 961, for example, at a position 1427, the second polymer sublayer 923 may contact the first polymer sublayer 921, thereby providing the number of the first conductive sublayer 961 The parts are electrically isolated from each other. The ground element 970 can be defined by the electrical isolation of these parts of the first conductive sublayer 961.

The deposition of the second polymer sublayer 923 can be performed by conventional techniques. Also, before depositing the second polymer sublayer 923, a mask (not shown) can be laid on several parts of the first conductive sublayer 961, and then the deposition and removal of the mask can be performed, so as to produce The semiconductor device 735 shown in FIG. 14.

The non-realistic X-sectional cross-sectional view of FIG. 15 illustrates the semiconductor device 735 after the sixth manufacturing stage according to the first specific embodiment. In this manufacturing stage, the second conductive sub-layer 963 is electroplated over the second polymer sub-layer 923. In a position where a mask is used to prevent the deposition of the second polymer sublayer 923, for example, at a position 1567, the second conductive sublayer 963 may contact the first conductive sublayer 961.

The non-realistic X-sectional cross-sectional view of FIG. 16 illustrates the semiconductor device 735 after the seventh manufacturing stage according to the first specific embodiment. In this manufacturing stage, via strips (vias) each in contact with the second conductive sublayer 963 and in electrical communication with a portion of the first conductive sublayer 961 can be formed. bar) 965 and RF filter 980. The formation of the via bar 965 and the RF filter 980 can be performed using conventional techniques and no further description is required.

The non-realistic X-sectional cross-sectional view of FIG. 17 illustrates the semiconductor device 735 after the eighth manufacturing stage according to the first specific embodiment. In this manufacturing stage, the mold 930 is formed over the via bar 965 and the RF filter 980. The technology used to form the mold 930 is well known to those of ordinary skill in the art and does not need to be detailed.

The non-realistic X-sectional cross-sectional view of FIG. 18 illustrates the semiconductor device 735 after the ninth manufacturing stage according to the first specific embodiment. In this manufacturing stage, a via opening 1867 is formed in the mold 930. In a specific embodiment, the through-hole opening 1867 can be formed by performing a laser opening technique on the mold 930. The formation of the via opening 1867 exposes the via strip 965 to subsequent processing steps.

The non-realistic X-sectional cross-sectional view of FIG. 19 illustrates the semiconductor device 735 after the tenth manufacturing stage according to the first specific embodiment. In the tenth manufacturing stage, the antenna 950 is formed by depositing conductive material on the mold 930, including depositing on the through-hole opening 1867 previously shown in FIG. 18 and filling the through-hole opening 1867. The deposition of the antenna 950 may require a diffusion barrier layer. Any standard sputtering process can be used to deposit a thin seed layer for the antenna 950 on the mold 930. Therefore, the antenna 950 is in electrical contact with the via bar 965, at least a part of the second conductive sublayer 963, and at least a part of the first conductive sublayer 961. The via bar 965, at least a part of the second conductive sublayer 963, and at least a part of the first conductive sublayer 961 together define the first conductive element 962.

The non-realistic X-sectional cross-sectional view of FIG. 20 illustrates the semiconductor device 735 after the eleventh manufacturing stage according to the first specific embodiment. In this manufacturing stage, the sacrificial carrier layer 1026 It is removed, and frontside C4 or CuP bumping is performed to generate a plurality of nodes 942, 944, and 946 on the second polymer layer 925.

However, without being limited to theory, the semiconductor device 735 may have a bandwidth of about 4.4 GHz and a gain of about 8 dBi for a 28 GHz signal.

The non-realistic far view plan view of FIG. 21 illustrates a second device 731 including a plurality of semiconductor devices 736 each including an antenna 2250 according to the second specific embodiment of this document. Figure 21 has many of the same elements as Figure 8. These same elements are marked with the element symbols first mentioned in Figure 8 and are as described herein. In general, the second device 731 is substantially similar to the first device 730 shown in FIG. 9. The second device 731 includes a plurality of semiconductor devices 736 similar to the semiconductor device 735 in FIG. 9.

The latest figure shown in FIG. 21 is an antenna 2250 that is substantially similar to the antenna 950 in FIG. 9.

Figure 21 also shows the ring 2277. In a plan view, the ring 2277 surrounds the antenna 2250, but is separated from the antenna 2250 by a part of the mold 930. The inclusion of the ring 2277 can reduce the signal discontinuity and/or signal loss of each semiconductor device 736.

Fig. 21 also shows the X tangents used to extract the cross-sectional views of Figs. 22 to 28.

The non-realistic X-sectional cross-sectional view of FIG. 22 illustrates the semiconductor device depicted in FIG. 21 according to the second embodiment. Many of the components shown in FIG. 22 are the same as or substantially similar to the components shown in FIG. 10 and are denoted by the same reference numerals.

Many differences between Figure 22 and Figure 10 will be apparent. One is that the first conductive element 2162 is disposed in the polymer layer 920 under the antenna 2250. First conduction element The element 2162 is a feeding layer that provides electrical communication between the antenna 2250 and the first node 944 (or, in another embodiment, the chip 910). The electrical communication provided by the first conductive element 2162 does not require a physical connection; instead, in this embodiment, the slit of the ground element 2270 couples electromagnetic fields to resonate the antenna.

In this specific embodiment, the ground element 2270 of the semiconductor device 736 is disposed on the second surface 924 of the polymer layer 920 and includes a slit lower than the antenna 2250 and higher than the first conductive element 2162. The slit of the ground element 2270 allows the first conductive element 2162 to feed the antenna 2250.

FIG. 22 also shows a via cage 2275, which extends from the ground element 2270 to the second surface 934 of the mold 930 and provides electrical communication to the ring 2277. The through-hole cage 2275 and the ring 2277 may be collectively referred to as a "ground shield" herein.

The non-realistic X-sectional cross-sectional view of FIG. 23 illustrates the semiconductor device 736 after the first manufacturing stage according to the second specific embodiment. The first manufacturing stage referred to here is not the first manufacturing stage of the device. Instead, the first manufacturing stage of the second specific embodiment is performed for the structure shown in FIG. 14. In the first manufacturing stage of the second specific embodiment, the second conductive sublayer 2363 is deposited on the second polymer sublayer 923 to produce the grounding element 2270 and the second conductive sublayer 2363 will not be grounded to the semiconductor device 736 A part of a path. The ground element 2270 is in contact with the first conductive sublayer 961. Another part of the first conductive sublayer 961 will provide the first conductive element 2162 depicted in FIG. 22.

The non-realistic X-sectional cross-sectional view of FIG. 24 illustrates the semiconductor device 736 after the second manufacturing stage according to the second specific embodiment. In this manufacturing stage, the RF filter 980 is formed in the manner described above.

The non-realistic X-sectional cross-sectional view of FIG. 25 illustrates the semiconductor device 736 after the third manufacturing stage according to the second specific embodiment. In this manufacturing stage, the mold 930 is formed in the manner described above.

The non-realistic X-sectional cross-sectional view of FIG. 26 illustrates the semiconductor device 736 after the fourth manufacturing stage according to the second specific embodiment. In this manufacturing stage, several through-hole openings 2667 are formed in the mold 930. In a specific embodiment, the through-hole opening 2667 can be formed by performing a laser opening technique on the mold 930. The through-hole opening 2667 is formed to expose the grounding element 2270 and the second grounding element 2270 to subsequent processing steps.

The non-realistic X-sectional cross-sectional view of FIG. 27 illustrates the semiconductor device 736 after the fifth manufacturing stage according to the second specific embodiment. In this manufacturing stage, the antenna 2250 is plated as described above when describing the antenna 950. At this time, the through hole cage 2275 in the through hole opening 2667 in FIG. 26 is also plated, and then the ring 2277 is plated. The ring 2277 may include aluminum. The ring 2277 can improve the directivity of the semiconductor device 736.

The non-realistic X-sectional cross-sectional view of FIG. 28 illustrates the semiconductor device 736 after the sixth manufacturing stage according to the second specific embodiment. In the sixth manufacturing stage, nodes 942, 944, and 946 are formed as described above.

However, without being limited to theory, the semiconductor device 736 may have a bandwidth of about 8.1 GHz and a gain of about 7.5 dBi for a 28 GHz signal.

The flowchart in FIG. 29 depicts a method 2900 for manufacturing a semiconductor device according to several specific embodiments herein. Specifically, the method 2900 includes forming (at step 2910) a semiconductor layer including a first surface and a second surface. In a specific embodiment, the semiconductor layer may be formed from silicon-germanium (at step 2910).

In some embodiments, the method 2900 may further include: forming (at step 2915) an oxide layer adjacent to the second surface of the semiconductor layer.

The method 2900 also includes forming (at step 2920) a polymer layer including a first surface and a second surface, wherein the first surface of the polymer layer is adjacent to the second surface of the semiconductor layer. In a specific embodiment where the oxide layer is formed (at step 2915), the oxide layer is disposed between the semiconductor layer and the polymer layer.

The method 2900 further includes forming (at step 2930) a mold including a first surface and a second surface, wherein the first surface of the mold is adjacent to the second surface of the polymer layer. In a specific embodiment, the mold may be formed (at step 2930) to have a thickness of 500 microns to 1000 microns. In yet another specific embodiment, the mold may be formed (at step 2930) to have a thickness of 750 microns to 800 microns. In a specific embodiment, the mold may be formed (at step 2930) to have a thickness of 775 microns.

The method 2900 additionally includes: forming (at step 2940) a plurality of nodes disposed near the first surface of the semiconductor layer. The method 2900 also further includes: forming (at step 2950) an antenna disposed on the second surface of the mold. The method 2900 further includes: forming (at step 2960) a first conductive element that provides electrical communication between the at least one first node and the antenna.

The method 2900 also includes forming (at step 2970) a grounding element disposed in the polymer layer or on the second surface of the polymer layer. The method 2900 further includes forming (at step 2980) a second conductive element that provides electrical communication between the at least one second node and the ground element.

In one embodiment, when the step of forming (at step 2970) the ground element of the semiconductor device includes forming the ground element on the second surface of the polymer layer, method 2900 It may additionally include: forming (at step 2972) a ground shield extending from the ground element to the second surface of the mold and surrounding the antenna.

Alternatively or in addition to forming (at step 2972) a ground shield, the method 2900 may further include: forming (at step 2982) a radio frequency (RF) filter disposed in the mold; and forming (at step 2984) a third The conductive element provides electrical communication between the at least one third node and the RF filter.

Alternatively or in addition to forming (at step 2972) a ground shield and/or forming (at step 2982) an RF filter, the method 2900 may additionally include: forming (at step 2985) a plurality of semiconductor devices; and At least one of (at step 2987): configuring a first subset of the plurality of semiconductor devices as a receiver antenna array, configuring a second subset of the plurality of semiconductor devices as a transmitter antenna array, or both. In this embodiment, the method may further include: determining (at step 2989) the first wavelength of the RF signal for the semiconductor device to receive, transmit, or both; and locating (at step 2991) the plurality of semiconductor devices , Resulting in the spacing between antennas close to the semiconductor device about half of the first wavelength.

The non-realistic drawing in FIG. 30 illustrates a system for manufacturing semiconductor devices according to several specific embodiments herein. The system 3000 is provided for forming an integrated circuit having one or more of the features mentioned in the description of Figs. 8 to 28 above, and can form one or Products with multiple features mentioned at the time.

The system 3000 in FIG. 30 may include a semiconductor device processing system 3010 and an integrated circuit design unit 3040. The semiconductor device processing system 3010 may manufacture an integrated circuit device based on one or more designs provided by the integrated circuit design unit 3040.

The semiconductor device processing system 3010 may include various processing workstations, such as deposition (for example, ALD, PECVD, etc.) workstations, etching processing workstations, photolithography processing workstations, CMP processing workstations, and so on. One or more processing steps performed by the processing system 3010 may be controlled by the processing controller 3020. The processing controller 3020 can be a workstation computer, a desktop computer, a laptop computer, a tablet computer, or any other type of computing device, which includes the ability to control the process, receive process feedback, receive test result data, perform learning cycle adjustment, and execute the process One or more software products for tuning, etc.

The semiconductor device processing system 3010 can generate integrated circuits on a medium, such as a silicon wafer. More specifically, the semiconductor device processing system 3010 can generate an integrated circuit including one or more semiconductor devices 735 and/or 736.

The integrated circuit production of the device processing system 3010 may be based on the circuit design provided by the integrated circuit design unit 3040. The processing system 3010 can provide the processed integrated circuit/device 3015 on the handling mechanism 3050, such as a conveyor belt system. In some embodiments, the handling system may be a precision clean room handling system capable of handling semiconductor wafers. In a specific embodiment, the semiconductor device processing system 3010 may include a plurality of processing steps for performing the deposition of materials including intrinsic stress into a gate cut region.

In some specific embodiments, the object labeled "3015" may represent an individual wafer, and in other specific embodiments, the object 3015 may represent a group of semiconductor wafers, for example, a "batch" of semiconductor wafers . The integrated circuit or device 3015 can be a transistor, a capacitor, a resistor, a memory cell, a processor, and/or the like.

The integrated circuit design unit 3040 of the system 3000 can provide a circuit design for the semiconductor processing system 3010 to manufacture the devices described herein.

The system 3000 can perform analysis and manufacturing of various products involving various technologies. For example, the system 3000 can design and generate data for manufacturing devices in CMOS technology, Flash technology, BiCMOS technology, and/or various other semiconductor technologies.

The above methods can be controlled by instructions stored in a non-transitory computer-readable storage medium and executed by a processor such as a computing device. Each operation described herein can correspond to instructions stored in non-transitory computer memory or computer-readable storage media. In various embodiments, the non-transitory computer-readable storage medium includes magnetic or optical disk storage devices, solid-state storage devices such as flash memory, or other non-volatile memory devices or several devices. The computer-readable instructions stored on the non-transitory computer-readable storage medium may be source code, combined language code, object code, or other instruction formats that can be interpreted and/or executed by one or more processors.

The specific embodiments disclosed above are for illustrative purposes only, and the present invention can be modified and implemented in obviously different but equivalent ways by those who are familiar with the art and benefit from the teachings herein. For example, the process steps proposed above can be completed in a different order. In addition, unless mentioned in the scope of the following patent applications, the present invention is not limited to the details of the construction or design shown herein. Therefore, it is obvious that the specific embodiments disclosed above can be changed or modified, and all such changes are considered to still be within the scope and spirit of the present invention. Therefore, the protection sought in this article is as described in the scope of the patent application filed below.

2900: method

2910~2991: steps

Claims (20)

A semiconductor device comprising: a semiconductor layer comprising a first surface and a second surface; a polymer layer comprising a first surface and a second surface, wherein the first surface of the polymer layer is close to the second surface of the semiconductor layer Surface; a mold, including a first surface and a second surface, wherein the first surface of the mold is close to the second surface of the polymer layer; a plurality of nodes are located close to the first surface of the semiconductor layer; an antenna, Disposed on the second surface of the mold; and the first conductive element provides electrical communication between at least one first node and the antenna by passing through the semiconductor layer, the polymer layer and the mold. The semiconductor device described in claim 1, wherein the mold has a thickness between about 500 micrometers and about 1000 micrometers. The semiconductor device described in claim 1 further comprises: a ground element provided in the polymer layer or on the second surface of the polymer layer; and a second conductive element provided on at least one Electrical communication between the two nodes and the grounding element. The semiconductor device described in claim 1 further includes: a radio frequency (RF) filter disposed in the mold; and a third conductive element provided between at least one third node and the RF filter Electrical communication. The semiconductor device described in claim 3, wherein the ground element is provided on the second surface of the polymer layer, and the semiconductor device further includes a ground shield extending from the ground element to The second surface of the mold surrounds the antenna. The semiconductor device described in claim 1, wherein the semiconductor layer includes silicon or silicon-germanium. A receiver antenna array and transmitter array system, including: a plurality of semiconductor devices, wherein each semiconductor device includes: a semiconductor layer including a first surface and a second surface; a polymer layer including a first surface and a second surface, Wherein, the first surface of the polymer layer is close to the second surface of the semiconductor layer; the mold includes a first surface and a second surface, wherein the first surface of the mold is close to the second surface of the polymer layer Surface; a plurality of nodes arranged close to the first surface of the semiconductor layer; an antenna arranged on the second surface of the mold; and a first conductive element by passing through the semiconductor layer, the polymer layer and the The mold provides electrical communication between at least one first node and the antenna; wherein the first subset of the semiconductor devices is configured as a receiver antenna array, and the second subset of the semiconductor devices is configured as Transmitter antenna array. According to the receiver antenna array and transmitter array system described in item 7 of the scope of patent application, the mold of each semiconductor device has a thickness between about 500 micrometers and about 1000 micrometers. The receiver antenna array and transmitter array system described in claim 7, wherein each semiconductor device further includes: a ground element disposed in the polymer layer or on the second surface of the polymer layer And a second conductive element, providing electrical communication between at least a second node and the ground element. The receiver antenna array and transmitter array system described in claim 7 wherein each semiconductor device further includes: a radio frequency (RF) filter provided in the mold; and a third conductive element provided in at least Electrical communication between a third node and the RF filter. The receiver antenna array and transmitter array system described in claim 9, wherein the ground element of each semiconductor device is disposed on the second surface of the polymer layer, and the semiconductor device further includes a ground A shield, the ground shield extends from the ground element to the second surface of the mold and surrounds the antenna. The receiver antenna array and transmitter array system described in the 7th patent application, wherein the semiconductor layer of each semiconductor device includes silicon or silicon-germanium. The receiver antenna array and transmitter array system described in claim 7 wherein the device is configured to receive, transmit, or both of RF signals with the first wavelength, and the semiconductor devices are positioned In order to make the distance between the antennas of the adjacent semiconductor devices approximately half of the first wavelength. A method for manufacturing a semiconductor device, the method comprising: forming a semiconductor layer including a first surface and a second surface; forming a polymer layer including the first surface and the second surface, wherein the first surface of the polymer layer The surface is close to the second surface of the semiconductor layer; a mold including a first surface and a second surface is formed, wherein the first surface of the mold is close to the second surface of the polymer layer; the semiconductor layer is formed A plurality of nodes arranged on the first surface; forming an antenna arranged on the second surface of the mold; and A first conductive element that provides electrical communication between at least one first node and the antenna is formed by passing through the semiconductor layer, the polymer layer and the mold. The method according to claim 14, wherein the step of forming the mold includes: forming the mold to have a thickness ranging from 500 μm to 1000 μm. The method described in claim 14 further includes: forming a ground element disposed in the polymer layer or on the second surface of the polymer layer; and forming a ground element provided on at least one second node and the The second conductive element for electrical communication between grounding elements. The method according to claim 14, further comprising: forming a radio frequency (RF) filter disposed in the mold; and forming an electrical communication provided between at least one third node and the RF filter The third conductive element. The method according to claim 16, wherein the step of forming the ground element includes: forming the ground element on the second surface of the polymer layer, and the method further includes: forming an extension from the ground element A ground shield to the second surface of the mold and surrounding the antenna. The method according to claim 14, wherein the step of forming the semiconductor layer includes: forming the semiconductor layer from silicon-germanium. The method according to claim 14, further comprising: forming a plurality of semiconductor devices each including the semiconductor layer, the polymer layer, the mold, the plurality of nodes, the antenna, and the first conductive element; as well as The first subset of the plurality of semiconductor devices is configured as a receiver antenna array, the second subset of the plurality of semiconductor devices is configured as a transmitter antenna array, or both.

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