TWI735672B - Beam scanning device, pattern drawing device, and accuracy inspection method of pattern drawing device - Google Patents
Beam scanning device, pattern drawing device, and accuracy inspection method of pattern drawing device Download PDFInfo
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- TWI735672B TWI735672B TW106134121A TW106134121A TWI735672B TW I735672 B TWI735672 B TW I735672B TW 106134121 A TW106134121 A TW 106134121A TW 106134121 A TW106134121 A TW 106134121A TW I735672 B TWI735672 B TW I735672B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/12—Scanning systems using multifaceted mirrors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
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Abstract
本發明之曝光裝置(EX)係將加工用光束(LBn)投射至繞旋轉軸(AXp)旋轉之多面鏡(PM)之複數個反射面(RP)之各者,並使被複數個反射面(RP)之各者反射之加工用光束(LBn)透過fθ透鏡系統(FT)於基板(P)上進行掃描。該曝光裝置(EX)具備:原點感測器,係在每當多面鏡(PM)之複數個反射面(RP)之各者成為既定之規定角度時便產生原點訊號(SZn);及修正部,其產生經修正值修正的修正原點訊號(SZn'),該修正值係相應於對應複數個反射面(RP)之各者而產生之原點訊號(SZn)之時間上間隔之偏差量之修正值。 The exposure device (EX) of the present invention projects the processing beam (LBn) to each of the multiple reflective surfaces (RP) of the polygon mirror (PM) that rotates around the rotation axis (AXp), and makes the multiple reflective surfaces The processing beam (LBn) reflected by each of (RP) passes through the fθ lens system (FT) to scan on the substrate (P). The exposure device (EX) is equipped with: an origin sensor, which generates an origin signal (SZn) whenever each of the multiple reflecting surfaces (RP) of the polygon mirror (PM) becomes a predetermined predetermined angle; and A correction part, which generates a corrected origin signal (SZn') corrected by a correction value corresponding to the time interval of the origin signal (SZn) generated corresponding to each of the plurality of reflecting surfaces (RP) The correction value of the deviation.
Description
本發明係關於一種使照射至對象物之被照射面上之光束之點光進行掃描之光束掃描裝置、使用此種光束掃描裝置描繪曝光既定之圖案之圖案描繪裝置、及圖案描繪裝置之精度檢查方法。 The present invention relates to a beam scanning device that scans the spot light of the beam irradiated on the irradiated surface of an object, a pattern drawing device that uses this beam scanning device to draw a predetermined pattern of exposure, and a precision inspection of the pattern drawing device method.
以往,已知例如使用如下文所示之日本特開2005-262260號公報之雷射加工裝置(光掃描裝置)來實現如下操作,即,將雷射光束之點光投射至被照射體(加工對象物),且一面藉由掃描反射鏡(多面鏡)使點光於一維方向上進行主掃描,一面使被照射體於與主掃描方向正交之副掃描方向上移動,而於被照射體上形成所期望之圖案或圖像(文字、圖形等)。 In the past, it has been known, for example, to use the laser processing device (optical scanning device) of Japanese Patent Laid-Open No. 2005-262260 as shown below to realize the following operation, that is, to project the spot light of the laser beam to the irradiated body (processing Object), and one side uses a scanning mirror (polygon mirror) to make the spot light perform main scanning in a one-dimensional direction, and the other side moves the illuminated object in the sub-scanning direction orthogonal to the main scanning direction to be illuminated The desired pattern or image (text, graphics, etc.) is formed on the body.
於日本特開2005-262260號公報中揭示有設置如下構件:檢流計鏡,其使來自振盪器1之雷射光反射並對照射至被加工物之雷射光於被加工物上之照射位置在Y方向(副掃描方向)上進行修正;多面鏡,其將由檢流計鏡反射之雷射光反射並使其於被加工物上在X方向(主掃描方向)上進行掃描;fθ透鏡,其使由檢流計鏡反射之雷射光聚光於被加工物上;及控制部,其應對雷射光通過fθ透鏡時產生之畸變像差,以修正雷射光於被加工物上之Y方向之照射位置誤差的方式控制檢流計鏡之反射角度,並且以修正雷射光於被加工物上之X方向之照射位置誤差的方式控制利用振盪器所產生之雷射光之脈衝振盪間隔。進而,於日本特開2005-262260號公報之圖8中表示設置雷射光源及檢測器,並根據端部 檢測訊號而如日本特開2005-262260號公報之圖9所示般控制振盪器之脈衝振盪之時序的構成,該雷射光源出射用以於多面鏡之旋轉中檢測多面鏡之各反射面之端部的檢測雷射光,該檢測器接收於多面鏡之各反射面之端部反射之檢測雷射光的反射光並產生端部檢測訊號。就如日本特開2005-262260號公報般之使用多面鏡之雷射加工裝置(光束掃描裝置)而言,使多面鏡之旋轉越高速,則越可縮短被加工物之加工處理時間,而可提高生產性。然而,有使多面鏡之旋轉越高速,則主掃描方向上之加工位置之偏差越明顯之情況。 Japanese Patent Laid-Open No. 2005-262260 discloses the installation of the following components: a galvanometer mirror that reflects the laser light from the
本發明之第1態樣係一種光束掃描裝置,其係對繞旋轉軸旋轉之旋轉多面鏡之複數個反射面之各者投射加工用光束,使被該複數個反射面之各者反射之該加工用光束透過掃描用光學系統於被照射體上進行掃描,且具備:原點檢測部,係在每當該旋轉多面鏡之該複數個反射面之各者成為既定之規定角度時產生原點訊號;及修正部,其產生經修正值修正的修正原點訊號,該修正值係相應於根據對應該複數個反射面之各者而產生之該原點訊號之時間上間隔之偏差量的修正值。 The first aspect of the present invention is a beam scanning device that projects a processing beam to each of a plurality of reflective surfaces of a rotating polygon mirror that rotates around a rotation axis, so that the beam is reflected by each of the plurality of reflective surfaces The processing beam passes through the scanning optical system to scan on the irradiated body, and is equipped with an origin detection unit, which generates an origin every time each of the plural reflecting surfaces of the rotating polygon mirror becomes a predetermined predetermined angle Signal; and a correction part, which generates a corrected origin signal corrected by a correction value corresponding to the amount of deviation of the time interval of the origin signal generated according to each of the plurality of reflecting surfaces value.
本發明之第2態樣係一種圖案描繪裝置,其係藉由對繞旋轉軸旋轉之旋轉多面鏡之複數個反射面之各者投射描繪用光束,使被該複數個反射面之各者反射之該描繪用光束透過掃描用光學系統於被照射體上進行掃描,而於該被照射體描繪圖案,且具備:原點檢測部,係在每當該旋轉多面鏡之該複數個反射面之各者成為既定之規定角度時產生原點訊號;描繪控制部,其將自該原點訊號之產生起既定之延遲時間後設定為利用該描繪用光束進行之圖案描繪之開始時間點;及修正部,其根據與該複數個反射面之各者成為該規定角度之時間上間隔之偏差相應之修正值,針對該複數個反射面之各者修正由該描繪控 制部設定之該延遲時間。 The second aspect of the present invention is a pattern drawing device, which projects a drawing light beam to each of a plurality of reflecting surfaces of a rotating polygon mirror that rotates around a rotation axis, and is reflected by each of the plurality of reflecting surfaces The drawing beam passes through the scanning optical system to scan on the irradiated body, and the pattern is drawn on the irradiated body. The origin signal is generated when each becomes a predetermined predetermined angle; the drawing control unit sets a predetermined delay time from the generation of the origin signal as the start time point of pattern drawing by the drawing light beam; and correction Section, which corrects the delay time set by the drawing control section for each of the plurality of reflecting surfaces based on the correction value corresponding to the deviation of the time interval at which each of the plurality of reflecting surfaces becomes the predetermined angle.
本發明之第3態樣係一種圖案描繪裝置,其係藉由對繞旋轉軸旋轉之旋轉多面鏡之複數個反射面之各者投射描繪用光束,使被該複數個反射面之各者反射之該描繪用光束透過掃描用光學系統於被支持構件支持之基板上進行掃描,而於該基板描繪圖案,且具備:原點檢測部,係在每當該旋轉多面鏡之該複數個反射面之各者成為既定之規定角度時產生原點訊號;描繪控制部,其將自該原點訊號之產生起既定之延遲時間後設定為利用該描繪用光束進行之圖案描繪之開始時間點;修正部,其根據與該複數個反射面之各者成為該規定角度之時間上間隔之偏差相應之修正值,針對該複數個反射面之各者修正由該描繪控制部設定之該延遲時間;及測量部,其藉由測量於利用該描繪用光束掃描形成於該支持構件或該基板之基準圖案時自該基準圖案產生之反射光之產生時間點與該原點訊號之產生時間點之間的時間,而求出與該偏差相應之修正值。 The third aspect of the present invention is a pattern drawing device, which projects a drawing light beam to each of a plurality of reflecting surfaces of a rotating polygon mirror that rotates around a rotation axis, so as to be reflected by each of the plurality of reflecting surfaces The drawing light beam passes through the scanning optical system to scan on the substrate supported by the supporting member, and the pattern is drawn on the substrate, and it is equipped with an origin detection unit, which is installed every time the plurality of reflecting surfaces of the rotating polygon mirror The origin signal is generated when each of them becomes a predetermined predetermined angle; the drawing control unit sets a predetermined delay time from the generation of the origin signal to the start time point of the pattern drawing performed by the drawing beam; correction; Section, which corrects the delay time set by the drawing control section for each of the plurality of reflecting surfaces based on the correction value corresponding to the deviation of the time interval at which each of the plurality of reflecting surfaces becomes the prescribed angle; and The measuring part measures the time between the generation time point of the reflected light generated from the reference pattern and the generation time point of the origin signal when the reference pattern formed on the support member or the substrate is scanned with the drawing beam Time, and find the correction value corresponding to the deviation.
本發明之第4態樣係一種圖案描繪裝置,其係藉由對繞旋轉軸旋轉之旋轉多面鏡之複數個反射面之各者投射描繪用光束,使被該複數個反射面之各者反射之該描繪用光束透過掃描用光學系統於被支持構件支持之基板上進行掃描,而於該基板描繪圖案,且具備:原點檢測部,係在每當該旋轉多面鏡之該複數個反射面之各者成為既定之規定角度時產生原點訊號;描繪控制部,其將自該原點訊號之產生起既定之延遲時間後設定為利用該描繪用光束進行之圖案描繪之開始時間點;修正部,其根據與該複數個反射面之各者成為該規定角度之時間上間隔之偏差相應之修正值,針對該複數個反射面之各者修正由該描繪控制部設定之該延遲時間;及測量部,其具有設置於該支持構件之支持面之一部分之光電轉換元件,且藉由測量該光電轉換元件被該描繪用光束掃描時所獲得之光電訊號之產生時間點與該原點訊號之產生時間點之間的時間,求出與該偏差相應之修正值。 The fourth aspect of the present invention is a pattern drawing device, which projects a drawing light beam to each of a plurality of reflecting surfaces of a rotating polygon mirror that rotates around a rotation axis, so as to be reflected by each of the plurality of reflecting surfaces The drawing light beam passes through the scanning optical system to scan on the substrate supported by the supporting member, and the pattern is drawn on the substrate, and it is equipped with an origin detection unit, which is installed every time the plurality of reflecting surfaces of the rotating polygon mirror The origin signal is generated when each of them becomes a predetermined predetermined angle; the drawing control unit sets a predetermined delay time from the generation of the origin signal to the start time point of the pattern drawing performed by the drawing beam; correction; Section, which corrects the delay time set by the drawing control section for each of the plurality of reflecting surfaces based on the correction value corresponding to the deviation of the time interval at which each of the plurality of reflecting surfaces becomes the prescribed angle; and The measuring part has a photoelectric conversion element arranged on a part of the supporting surface of the supporting member, and measures the time point of generation of the photoelectric signal obtained when the photoelectric conversion element is scanned by the drawing beam and the origin signal The time between the generation time points is calculated, and the correction value corresponding to the deviation is obtained.
本發明之第5態樣係一種檢查圖案描繪裝置之精度之方法,該圖案描繪裝置係對繞旋轉軸旋轉之旋轉多面鏡之複數個反射面之各者投射描繪用光束,使被該複數個反射面之各者反射之該描繪用光束透過掃描用光學系統於被支持構件支持之基板上聚光為點光,並於主掃描方向上進行掃描,且該方法包含以下階段:設定階段,響應於每當該旋轉多面鏡之該複數個反射面之各者成為既定之規定角度時自原點檢測部產生之原點訊號中的該旋轉多面鏡之特定之反射面成為該規定角度時所產生之特定之原點訊號,藉由利用該特定之反射面所進行之該點光之主掃描方向的掃描而進行檢查用圖案之描繪;描繪階段,於藉由該旋轉多面鏡之旋轉而重複產生之該特定之原點訊號的間隔時間之間,一面使該基板以小於該點光之大小之距離於與該主掃描方向交叉之副掃描方向移動,一面描繪該檢查用圖案;重複階段,使該旋轉多面鏡之該特定之反射面不同,重複該設定階段與該描繪階段;及檢查階段,測量描繪於該基板之該檢查用圖案之形狀、或該主掃描方向之配置之偏差,而檢查該原點訊號之精度。 The fifth aspect of the present invention is a method for inspecting the accuracy of a pattern drawing device that projects a drawing beam to each of a plurality of reflecting surfaces of a rotating polygon mirror that rotates around a rotation axis, so that the pattern drawing device is The drawing light beam reflected by each of the reflective surfaces passes through the scanning optical system and condenses into spot light on the substrate supported by the supporting member, and scans in the main scanning direction. The method includes the following stages: setting stage, response Generated when each of the plurality of reflecting surfaces of the rotating polygon mirror becomes a predetermined predetermined angle, in the origin signal generated from the origin detection unit, the specific reflecting surface of the rotating polygon mirror becomes the predetermined angle The specific origin signal is drawn by scanning the main scanning direction of the spot light by using the specific reflecting surface to draw the inspection pattern; the drawing stage is repeatedly generated by the rotation of the rotating polygon mirror During the interval time of the specific origin signal, while the substrate is moved in the sub-scanning direction crossing the main scanning direction by a distance smaller than the size of the spot light, the inspection pattern is drawn on the same side; the stage is repeated to make The specific reflecting surface of the rotating polygon mirror is different, the setting stage and the drawing stage are repeated; and the inspection stage is to measure the deviation of the shape of the inspection pattern drawn on the substrate or the configuration of the main scanning direction to inspect The accuracy of the origin signal.
50J‧‧‧開口部 50J‧‧‧Opening
60a‧‧‧光束送光部(光束送光系統) 60a‧‧‧Beam delivery part (beam delivery system)
60b‧‧‧光束受光部(光束受光系統) 60b‧‧‧Beam receiving part (beam receiving system)
200‧‧‧描繪控制裝置 200‧‧‧Drawing control device
210‧‧‧計數電路 210‧‧‧Counting circuit
212‧‧‧移位暫存器 212‧‧‧Shift register
212A‧‧‧暫存器 212A‧‧‧register
214‧‧‧移位器控制電路 214‧‧‧Shifter control circuit
220‧‧‧感測器 220‧‧‧Sensor
222‧‧‧檢測電路 222‧‧‧Detection circuit
240‧‧‧A/D轉換部 240‧‧‧A/D conversion section
241‧‧‧倍增部 241‧‧‧Multiplier
242‧‧‧波形記憶部(記憶部) 242‧‧‧Waveform memory (memory)
244‧‧‧位址產生部 244‧‧‧Address Generation Department
246‧‧‧波形分析部 246‧‧‧Waveform Analysis Department
Aw‧‧‧箭頭 Aw‧‧‧Arrow
AX1、AXb、AXf‧‧‧光軸 AX1, AXb, AXf‧‧‧Optical axis
AXo‧‧‧中心軸 AXo‧‧‧Central axis
AXp‧‧‧旋轉軸 AXp‧‧‧Rotation axis
Axv‧‧‧檢測區域 Axv‧‧‧Detection area
Bga‧‧‧雷射光束(光束) Bga‧‧‧Laser beam (beam)
Bgb、Bgb'‧‧‧反射光束 Bgb, Bgb'‧‧‧reflected beam
Bgc、Bgd、LB、LB1~LB6、LBn‧‧‧光束 Bgc, Bgd, LB, LB1~LB6, LBn‧‧‧Beam
BS1‧‧‧偏振分光鏡 BS1‧‧‧Polarization beam splitter
CCK、CLK‧‧‧時脈訊號 CCK, CLK‧‧‧clock signal
CLK2‧‧‧取樣時脈訊號 CLK2‧‧‧Sampling clock signal
CTu‧‧‧平均位置 CTu‧‧‧Average position
CYa‧‧‧第1柱面透鏡 CYa‧‧‧The first cylindrical lens
CYb‧‧‧第2柱面透鏡 CYb‧‧‧The second cylindrical lens
DF1~DF6、DFn‧‧‧驅動訊號 DF1~DF6, DFn‧‧‧Drive signal
DR‧‧‧旋轉筒 DR‧‧‧Rotating drum
DTc‧‧‧光檢測器 DTc‧‧‧Photodetector
DTo‧‧‧光電轉換元件 DTo‧‧‧Photoelectric conversion element
DXa、DXb‧‧‧圖案檢測器 DXa, DXb‧‧‧Pattern detector
Ef、Et‧‧‧邊緣部 Ef, Et‧‧‧Edge
EX‧‧‧曝光裝置(圖案描繪裝置) EX‧‧‧Exposure device (pattern drawing device)
Fgs、fo‧‧‧焦點距離 Fgs、fo‧‧‧focus distance
FT‧‧‧fθ透鏡系統(描繪用掃描透鏡) FT‧‧‧fθ lens system (scanning lens for drawing)
Ga‧‧‧聚光透鏡 Ga‧‧‧Condenser lens
Gb、Gc‧‧‧準直透鏡 Gb, Gc‧‧‧collimating lens
GLa、GLb‧‧‧透鏡系統 GLa, GLb‧‧‧lens system
GSa、GSb‧‧‧間隙感測器(線性感測器) GSa, GSb‧‧‧Gap Sensor (Linear Sensor)
IC1、IC2‧‧‧電流放大部 IC1, IC2‧‧‧Current Amplifier
IC3‧‧‧比較器部 IC3‧‧‧Comparator section
IMn、IM1~IM6‧‧‧入射鏡 IMn、IM1~IM6‧‧‧Entrance mirror
LBnz‧‧‧0次光束 LBnz‧‧‧0 times beam
Lcc‧‧‧直線 Lcc‧‧‧Straight
LDo‧‧‧半導體雷射光源 LDo‧‧‧Semiconductor laser light source
LS‧‧‧光源裝置(脈衝光源裝置) LS‧‧‧Light source device (pulse light source device)
M1~M12、M20~M24、M20a、MRa‧‧‧反射鏡 M1~M12, M20~M24, M20a, MRa‧‧‧Mirror
Mcc‧‧‧旋轉基準標記 Mcc‧‧‧Rotating fiducial mark
MPa~MPh‧‧‧行 MPa~MPh‧‧‧line
OS1~OS6、OSn‧‧‧選擇用光學元件 OS1~OS6, OSn‧‧‧Optical components for selection
P‧‧‧基板(被照射體) P‧‧‧Substrate (irradiated body)
PD1、PD2‧‧‧受光面 PD1, PD2‧‧‧Light-receiving surface
PM‧‧‧多面鏡 PM‧‧‧Polygon mirror
Ps‧‧‧面 Ps‧‧‧face
PTL1、PTL2、PTL3‧‧‧基準圖案 PTL1, PTL2, PTL3‧‧‧reference pattern
RM‧‧‧旋轉馬達 RM‧‧‧Rotating Motor
RP、RPa~RPh、RPa'‧‧‧反射面 RP, RPa~RPh, RPa'‧‧‧Reflecting surface
RPa/b~RPh/a‧‧‧反射面間之位置 RPa/b~RPh/a‧‧‧The position between the reflecting surfaces
RST‧‧‧重設訊號 RST‧‧‧Reset signal
SDn‧‧‧描繪資料 SDn‧‧‧Drawing data
Sff‧‧‧移位訊號 Sff‧‧‧shift signal
SJ‧‧‧控制資訊 SJ‧‧‧Control Information
Sj‧‧‧轉動脈衝訊號 Sj‧‧‧Rotating pulse signal
SL1~SL6、SLn‧‧‧描繪線 SL1~SL6, SLn‧‧‧Drawing line
SP、SPr‧‧‧點光 SP, SPr‧‧‧point light
STa、STb‧‧‧輸出訊號 STa, STb‧‧‧output signal
Sv‧‧‧訊號(光電訊號) Sv‧‧‧signal (photoelectric signal)
SZ1~SZ6、SZn、SZn'、SZn(a)1~SZn(a)7‧‧‧原點訊號 SZ1~SZ6, SZn, SZn', SZn(a)1~SZn(a)7‧‧‧origin signal
Tab、Tbc、Tcd、Tde、Tef、Tfg、Tgh、Tha‧‧‧間隔時間 Tab, Tbc, Tcd, Tde, Tef, Tfg, Tgh, Tha‧‧‧Interval time
TD、△TD、△Toa、△Tob、△Toc、△Tod、△Toe、△Tof、△Tog、△Toh、△Tu‧‧‧ 延遲時間 TD, △TD, △Toa, △Tob, △Toc, △Tod, △Toe, △Tof, △Tog, △Toh, △Tu‧‧‧ Delay time
TDa~TDh‧‧‧轉動時間 TDa~TDh‧‧‧Rotation time
Tog、Tog'、Tog1、Tog2‧‧‧原點時刻 Tog, Tog', Tog1, Tog2‧‧‧origin time
Tpt‧‧‧測試圖案 Tpt‧‧‧Test pattern
TR‧‧‧吸收體 TR‧‧‧Absorber
Tsr'‧‧‧基準時間 Tsr'‧‧‧base time
Tu1、Tu2‧‧‧時刻 Tu1, Tu2‧‧‧Time
U1~U6、Un‧‧‧描繪單元 U1~U6, Un‧‧‧Drawing unit
Vref‧‧‧偏移電壓(基準電壓) Vref‧‧‧Offset voltage (reference voltage)
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction
△Te‧‧‧偏差量 △Te‧‧‧Tolerance
△Tm1~△Tm7、△Tma~△Tmh‧‧‧原點間隔時間 △Tm1~△Tm7、△Tma~△Tmh‧‧‧Origin interval time
△TPc‧‧‧時間 △TPc‧‧‧Time
θf‧‧‧角度範圍 θf‧‧‧Angle range
圖1係表示對第1實施形態之基板實施曝光處理之曝光裝置的概略構成之立體圖。 Fig. 1 is a perspective view showing a schematic configuration of an exposure apparatus that performs exposure processing on a substrate of the first embodiment.
圖2係圖1所示之描繪單元之具體之構成圖。 Fig. 2 is a detailed configuration diagram of the drawing unit shown in Fig. 1.
圖3係於XY面內觀察圖2所示之描繪單元內之多面鏡、fθ透鏡系統、及構成原點感測器之光束受光系統等之配置而得之圖。 FIG. 3 is a diagram obtained by observing the configuration of the polygon mirror, fθ lens system, and the light beam receiving system constituting the origin sensor in the drawing unit shown in FIG. 2 in the XY plane.
圖4係將圖2、圖3所示之光束送光系統與光束受光系統之配置簡化而表示之圖。 Fig. 4 is a simplified diagram showing the configuration of the beam transmitting system and the beam receiving system shown in Figs. 2 and 3.
圖5係表示圖3或圖4所示之光電轉換元件之詳細構成之圖。 FIG. 5 is a diagram showing the detailed structure of the photoelectric conversion element shown in FIG. 3 or FIG. 4.
圖6係表示光束切換部之概略構成之圖,該光束切換部包含用以將來自光源 裝置之光束選擇性地分配至6個描繪單元中之任一者之選擇用光學元件。 Fig. 6 is a diagram showing a schematic configuration of a light beam switching unit including a selective optical element for selectively distributing the light beam from the light source device to any one of the six drawing units.
圖7係表示選擇用光學元件及入射鏡周圍之具體構成之圖。 Fig. 7 is a diagram showing the specific configuration around the optical element for selection and the incident mirror.
圖8係圖3或圖4所示之8面之多面鏡之俯視圖。 FIG. 8 is a top view of the 8-sided polygon mirror shown in FIG. 3 or FIG. 4. FIG.
圖9係說明測量原點訊號之產生時序之再現性(偏差)之方法的圖。 FIG. 9 is a diagram illustrating a method of measuring the reproducibility (deviation) of the generation timing of the origin signal.
圖10係示意性地表示預測由多面鏡之速度變動所致之時間誤差量之方法的圖。 FIG. 10 is a diagram schematically showing a method of predicting the amount of time error caused by the speed variation of the polygon mirror.
圖11係表示於既定之條件下,利用如圖9之方法實測與多面鏡之反射面之各者對應地產生的原點訊號之再現性而得之結果之圖。 FIG. 11 is a graph showing the results obtained by using the method shown in FIG. 9 to measure the reproducibility of the origin signal corresponding to each of the reflecting surfaces of the polygon mirror under the predetermined conditions.
圖12係表示於與圖11不同之條件下,利用如圖9之方法實測與多面鏡之反射面之各者對應地產生的原點訊號之再現性而得之結果之圖。 FIG. 12 is a diagram showing the results obtained by using the method shown in FIG. 9 to measure the reproducibility of the origin signal corresponding to each of the reflecting surfaces of the polygon mirror under conditions different from those in FIG. 11.
圖13係表示使平均每1像素2脈衝量之點光以光點大小之1/2於主掃描方向與副掃描方向上重疊而於主掃描方向上描繪5像素量之連續圖案之狀態的圖。 13 is a diagram showing a state in which an average of 2 pulses per pixel of spot light is overlapped in the main scanning direction and the sub-scanning direction with 1/2 of the spot size, and a continuous pattern of 5 pixels is drawn in the main scanning direction. .
圖14係示意性地表示圖12之實測例之特性之圖而得的圖。 FIG. 14 is a diagram schematically showing the characteristics of the actual measurement example in FIG. 12.
圖15係說明將原點訊號進行修正而得之原點訊號(修正原點訊號)之產生之狀態的時序圖。 FIG. 15 is a timing diagram illustrating the generation state of the origin signal (corrected origin signal) obtained by correcting the origin signal.
圖16係表示如圖15般輸入來自光電轉換元件之原點訊號並產生經修正之原點訊號(修正原點訊號)之修正電路(修正部)之構成之一例的圖。 16 is a diagram showing an example of the configuration of a correction circuit (correction unit) that inputs the origin signal from the photoelectric conversion element and generates a corrected origin signal (correction origin signal) as shown in FIG. 15.
圖17係表示變形例2之原點感測器之構成之圖。 FIG. 17 is a diagram showing the structure of the origin sensor of Modification Example 2. FIG.
圖18係表示利用點光掃描形成於旋轉筒之外周面之線與間隙狀之基準圖案時自光檢測器產生之光電訊號之波形之一例的圖。 18 is a diagram showing an example of the waveform of the photoelectric signal generated from the photodetector when the line and gap-like reference patterns formed on the outer circumferential surface of the rotating cylinder are scanned by spot light.
圖19係表示對來自光檢測器之訊號之波形進行數位取樣的電路構成之一例之圖。 Fig. 19 is a diagram showing an example of the circuit configuration for digitally sampling the waveform of the signal from the photodetector.
圖20係表示使用圖19之電路構成測量修正原點訊號或原點訊號之原點時刻之產生時序的偏差之一例之時序圖。 FIG. 20 is a timing diagram showing an example of the deviation of the generation timing of the corrected origin signal or the origin time of the origin signal measured by using the circuit configuration of FIG. 19.
圖21係說明用以檢驗第3實施形態之修正原點訊號(或修正前之原點訊號)之精度的測試曝光之方法之圖。 FIG. 21 is a diagram illustrating a test exposure method used to verify the accuracy of the corrected origin signal (or the origin signal before correction) of the third embodiment.
圖22係於旋轉筒之外周面中之中心軸延伸之方向的端部設置有在周方向上連續之線狀之基準圖案的圖。 Fig. 22 is a diagram in which a linear reference pattern continuous in the circumferential direction is provided at the end of the outer circumferential surface of the rotating cylinder in the direction in which the central axis extends.
圖23係表示第4實施形態之旋轉筒DR之局部剖面之圖。 Fig. 23 is a view showing a partial cross-section of the rotating drum DR of the fourth embodiment.
關於本發明之態樣之光束掃描裝置、圖案描繪裝置、及圖案描繪裝置之精度檢查方法,舉出較佳之實施形態,一面參照隨附圖式,一面於下文詳細地進行說明。再者,本發明之態樣並不限定於該等實施形態,亦包含添加有多種變更或改良者。即,以下所記載之構成要素中包含業者能夠容易地假設者及實質上相同者,以下所記載之構成要素可適當組合。又,可於不脫離本發明之主旨之範圍內進行構成要素之各種省略、置換或變更。 With regard to the beam scanning device, the pattern drawing device, and the accuracy inspection method of the pattern drawing device of the aspect of the present invention, preferred embodiments are given, and the accompanying drawings are referred to and the following description is given in detail. Furthermore, the aspects of the present invention are not limited to these embodiments, and include those with various changes or improvements added. That is, the constituent elements described below include those that can be easily assumed by the manufacturer and those that are substantially the same, and the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the spirit of the present invention.
[第1實施形態] [First Embodiment]
圖1係表示對第1實施形態之基板(被照射體)P實施曝光處理之曝光裝置(圖案描繪裝置)EX的概略構成之立體圖。再者,於以下之說明中,只要未特別說明,則設定以重力方向為Z方向之XYZ正交座標系,並按照圖中所示之箭頭說明X方向、Y方向、及Z方向。 FIG. 1 is a perspective view showing a schematic configuration of an exposure device (pattern drawing device) EX that performs exposure processing on a substrate (irradiated body) P of the first embodiment. Furthermore, in the following description, unless otherwise specified, an XYZ orthogonal coordinate system with the direction of gravity as the Z direction is set, and the X direction, Y direction, and Z direction are described according to the arrows shown in the figure.
曝光裝置EX係對基板P實施既定之處理(曝光處理等)而製造電子元件之元件製造系統中所使用的基板處理裝置。元件製造系統係例如構築有製造作為電子元件之軟性顯示器、膜狀之觸控面板、液晶顯示面板用之膜狀之彩色濾光片、軟性配線、或軟性感測器等之生產線的製造系統。以下,作為電子元件以軟性顯示器為前提進行說明。作為軟性顯示器,有例如有機EL顯示器、液晶顯示器等。元件製造系統具有所謂之輥對輥(Roll To Roll)方式之生產方 式,即,自將軟性(可撓性)之片狀之基板(薄片基板)P捲成輥狀之未圖示之供給輥送出基板P,且對所送出之基板P連續地實施各種處理之後,利用未圖示之回收輥捲取各種處理後之基板P。因此,各種處理後之基板P成為複數個元件(顯示面板)以於基板P之搬送方向上相連之狀態排列之多倒角用之基板。自供給輥搬送之基板P依序通過前步驟之製程裝置、曝光裝置EX、及後步驟之製程裝置而被實施各種處理,且被回收輥捲取。基板P具有基板P之移動方向(搬送方向)成為長邊方向(長條方向),寬度方向成為短邊方向(短條方向)之帶狀之形狀。 The exposure apparatus EX is a substrate processing apparatus used in a component manufacturing system that performs predetermined processing (exposure processing, etc.) on the substrate P to manufacture electronic components. The device manufacturing system is, for example, a manufacturing system constructed with a production line for manufacturing flexible displays as electronic components, film-shaped touch panels, film-shaped color filters for liquid crystal display panels, flexible wiring, or soft sensors. Hereinafter, the description will be made on the premise of a flexible display as an electronic component. As the flexible display, there are, for example, an organic EL display, a liquid crystal display, and the like. The component manufacturing system has a so-called roll-to-roll (Roll To Roll) production method, that is, a supply roll (not shown) that rolls a soft (flexible) sheet substrate (sheet substrate) P into a roll. After the substrate P is sent out, and various treatments are continuously performed on the sent substrate P, the substrate P after various treatments is taken up by a recovery roller (not shown). Therefore, the substrate P after various treatments becomes a substrate for multiple chamfering in which a plurality of elements (display panels) are arranged in a state connected in the conveying direction of the substrate P. The substrate P conveyed from the supply roller sequentially passes through the process device of the previous step, the exposure device EX, and the process device of the subsequent step to be subjected to various processes, and is taken up by the recovery roller. The substrate P has a strip shape in which the moving direction (conveying direction) of the substrate P becomes the long side direction (long direction), and the width direction becomes the short side direction (short direction).
基板P係使用例如樹脂膜、或者由不鏽鋼等金屬或合金構成之箔(foil)等。作為樹脂膜之材質,亦可使用例如包含聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯酯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、及乙酸乙烯酯樹脂中之至少一種以上。又,基板P之厚度或剛性(楊氏模數)只要為如於通過元件製造系統或曝光裝置EX之搬送路徑時基板P不會產生由屈曲所致之折痕或不可逆之皺褶之範圍便可。作為基板P之母材,厚度為25μm~200μm左右之PET(聚對苯二甲酸乙二酯)或PEN(聚萘二甲酸乙二醇酯)等之膜係較佳之薄片基板之代表。 The substrate P uses, for example, a resin film, or a foil made of metal or alloy such as stainless steel. As the material of the resin film, for example, polyethylene resins, polypropylene resins, polyester resins, ethylene-vinyl ester copolymer resins, polyvinyl chloride resins, cellulose resins, polyamide resins, and polyimide resins can also be used. , At least one of polycarbonate resin, polystyrene resin, and vinyl acetate resin. In addition, the thickness or rigidity (Young's modulus) of the substrate P should be such that the substrate P does not produce creases or irreversible wrinkles caused by buckling when passing through the transport path of the component manufacturing system or the exposure device EX. Can. As the base material of the substrate P, a film such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) with a thickness of about 25 μm to 200 μm is representative of the preferred sheet substrate.
基板P有於在元件製造系統內實施之各處理中受熱之情況,故而較佳為選定熱膨脹係數不太大之材質之基板P。例如可藉由將無機填料混合於樹脂膜而抑制熱膨脹係數。無機填料亦可為例如氧化鈦、氧化鋅、氧化鋁、或氧化矽等。又,基板P可為利用浮製法等製造之厚度100μm左右之極薄玻璃之單層體,亦可為於該極薄玻璃貼合上述樹脂膜、箔等而成之積層體。 The substrate P is subject to heat during various processes implemented in the device manufacturing system, so it is preferable to select a substrate P made of a material with a low thermal expansion coefficient. For example, the thermal expansion coefficient can be suppressed by mixing an inorganic filler in the resin film. The inorganic filler may also be, for example, titanium oxide, zinc oxide, aluminum oxide, or silicon oxide. In addition, the substrate P may be a single layer body of ultra-thin glass with a thickness of about 100 μm manufactured by a float method or the like, or may be a laminate body formed by bonding the above-mentioned resin film, foil, etc., to the ultra-thin glass.
此外,所謂基板P之可撓性(flexibility)係指即便對基板P施加自重程度之力亦不會剪切或斷裂而能夠使該基板P彎曲之性質。又,因自重程度之力而屈曲之性質亦包含於可撓性。又,可撓性之程度係根據基板P之材質、大小、 厚度、成膜於基板P上之層構造、溫度、或濕度等環境等而變化。總之,只要於在設置於元件製造系統(曝光裝置EX)內之搬送路徑之各種搬送用滾筒、旋轉筒等之搬送方向轉換用之構件正確地捲繞有基板P之情形時,可不屈曲而帶有折痕或破損(產生破碎或裂紋)地順利搬送基板P,便可稱為可撓性之範圍。 In addition, the so-called flexibility of the substrate P refers to the property that the substrate P can be bent without shearing or breaking even if a force of its own weight is applied to the substrate P. In addition, the nature of buckling due to the force of its own weight is also included in flexibility. In addition, the degree of flexibility varies depending on the material, size, thickness, layer structure of the film formed on the substrate P, temperature, humidity, and other environments. In short, as long as the substrate P is correctly wound around the various conveying rollers, rotating drums and other conveying direction switching members installed in the conveying path of the component manufacturing system (exposure apparatus EX), the substrate P can be wound without buckling The smooth transfer of the substrate P with creases or breakages (cracks or cracks) can be referred to as the range of flexibility.
前步驟之製程裝置(包含單一處理部或複數個處理部)係一面將自供給輥送來之基板P朝向曝光裝置EX以既定之速度沿著長條方向搬送,一面對搬送至曝光裝置EX之基板P進行前步驟之處理。藉由該前步驟之處理,搬送至曝光裝置EX之基板P成為於其表面形成有感光性功能層(光感應層)之基板(感光基板)。 The process device of the previous step (including a single processing unit or a plurality of processing units) transports the substrate P sent from the supply roller toward the exposure device EX at a predetermined speed along the longitudinal direction, and the other side is transported to the exposure device EX The substrate P is processed in the previous step. Through the processing of this previous step, the substrate P conveyed to the exposure apparatus EX becomes a substrate (photosensitive substrate) on which a photosensitive functional layer (photosensitive layer) is formed.
該感光性功能層係藉由以溶液之形式塗佈於基板P上且進行乾燥而成為層(膜)。感光性功能層之代表者為光阻劑(液狀或乾燥膜狀),但作為無需顯影處理之材料,有受到紫外線之照射之部分之親液/撥液性被改質之感光性矽烷偶合劑(SAM)、或於受到紫外線之照射之部分顯露出鍍覆還原基之感光性還原劑等。於使用感光性矽烷偶合劑作為感光性功能層之情形時,基板P上之經紫外線曝光之圖案部分自撥液性改質為親液性。因此,藉由於成為親液性之部分之上選擇塗佈含有導電性油墨(含有銀或銅等導電性奈米粒子之油墨)或半導體材料之液體等,可形成成為構成薄膜電晶體(TFT)等之電極、半導體、絕緣或連接用之配線之圖案層。於使用感光性還原劑作為感光性功能層之情形時,於基板P上之經紫外線曝光之圖案部分顯露鍍覆還原基。因此,曝光後,將基板P直接於包含鈀離子等之鍍覆液中浸漬固定時間,藉此形成(析出)鈀之圖案層。此種鍍覆處理係加成(additive)之製程,但此外,亦可以作為減成(subtractive)之製程之蝕刻處理為前提。於此情形時,被送至曝光裝置EX之基板P宜為將母材設為PET或PEN,並於其表面全面或選擇性地蒸鍍鋁(Al)或銅(Cu)等之金屬性薄膜,進而於其上積層光阻劑層而成者。 The photosensitive functional layer becomes a layer (film) by coating it on the substrate P in the form of a solution and drying. The representative of the photosensitive functional layer is photoresist (liquid or dry film), but as a material that does not require development treatment, the lyophilic/liquid-repellent part of the photosensitive silane couple that is irradiated by ultraviolet rays is modified Mixture (SAM), or a photosensitive reducing agent that exposes a plating reducing group on the part irradiated by ultraviolet rays. In the case of using a photosensitive silane coupling agent as the photosensitive functional layer, the ultraviolet-exposed pattern on the substrate P is transformed from liquid repellency to lyophilicity. Therefore, by selectively applying a liquid containing conductive ink (an ink containing conductive nanoparticles such as silver or copper) or a semiconductor material on the lyophilic part, it can be formed into a thin film transistor (TFT). Pattern layer for electrodes, semiconductors, insulation or connection wiring. In the case of using a photosensitive reducing agent as the photosensitive functional layer, the ultraviolet-exposed pattern on the substrate P reveals the plating reducing base. Therefore, after exposure, the substrate P is directly immersed in a plating solution containing palladium ions or the like for a fixed period of time, thereby forming (precipitating) a patterned layer of palladium. This plating process is an additive process, but in addition, it can also be used as a prerequisite for the etching process of a subtractive process. In this case, the substrate P sent to the exposure device EX is preferably made of PET or PEN as the base material, and a metallic thin film such as aluminum (Al) or copper (Cu) is vapor-deposited on the entire surface or selectively , And then laminated a photoresist layer on it.
曝光裝置(處理裝置)EX係一面將自前步驟之製程裝置搬送來之基板P朝後步驟之製程裝置(包含單一處理部或複數個處理部)以既定之速度進行搬送,一面對基板P進行曝光處理之處理裝置。曝光裝置EX對基板P之表面(感光性功能層之表面、即感光面)照射與電子元件用之圖案(例如構成電子元件之TFT之電極或配線等之圖案)相應之光圖案。藉此,於感光性功能層形成與上述圖案對應之潛像(改質部)。 Exposure device (processing device) EX is a process device (including a single processing section or multiple processing sections) that transports the substrate P transported from the process device of the previous step at a predetermined speed, and the substrate P is transported at the same time. Processing device for exposure processing. The exposure device EX irradiates the surface of the substrate P (the surface of the photosensitive functional layer, that is, the photosensitive surface) with a light pattern corresponding to the pattern for the electronic component (for example, the pattern of the electrode or wiring of the TFT constituting the electronic component). Thereby, a latent image (modified part) corresponding to the above-mentioned pattern is formed on the photosensitive functional layer.
於本實施形態中,曝光裝置EX係如圖1所示般未使用光罩之直描方式之曝光裝置、即所謂之光點掃描方式之曝光裝置(描繪裝置)。曝光裝置EX具備:旋轉筒DR,其為實現副掃描而對基板P予以支持並於長條方向上進行搬送;及複數個(此處為6個)描繪單元Un(U1~U6),其等對利用旋轉筒DR呈圓筒面狀予以支持之基板P之每個部分進行圖案曝光;複數個描繪單元Un(U1~U6)之各者一面使曝光用之脈衝狀之光束LB(脈衝光束)之點光SP於基板P之被照射面(感光面)上在既定之掃描方向(Y方向)上利用多面鏡(掃描構件)一維地進行掃描(主掃描),一面根據圖案資料(描繪資料、圖案資訊)高速地調變(接通/斷開)點光SP之強度。藉此,於基板P之被照射面描繪曝光與電子元件、電路或配線等之既定之圖案相應之光圖案。即,利用基板P之副掃描及點光SP之主掃描使點光SP於基板P之被照射面(感光性功能層之表面)上相對地進行二維掃描,而於基板P之被照射面描繪曝光既定之圖案。又,由於基板P被沿著長條方向搬送,故而藉由曝光裝置EX曝光圖案之被曝光區域係沿著基板P之長條方向隔開既定之間隔而設置有複數個。由於在該被曝光區域形成有電子元件,被曝光區域亦為元件形成區域。 In this embodiment, the exposure device EX is a direct-drawing method exposure device that does not use a mask as shown in FIG. 1, that is, a so-called spot scanning method exposure device (drawing device). The exposure device EX is equipped with: a rotating drum DR, which supports the substrate P for sub-scanning and conveys it in the longitudinal direction; and a plurality of (here, 6) drawing units Un (U1~U6), etc. Pattern exposure is performed on each part of the substrate P supported by the rotating drum DR in the shape of a cylindrical surface; each of the plurality of drawing units Un (U1~U6) uses a pulsed light beam LB (pulse beam) for exposure on one side The spot light SP is scanned one-dimensionally (main scanning) on the illuminated surface (photosensitive surface) of the substrate P in the predetermined scanning direction (Y direction) using a polygonal mirror (scanning member), and one side is scanned according to the pattern data (drawing data). , Pattern information) High-speed modulation (on/off) of the intensity of the spot light SP. Thereby, a light pattern corresponding to a predetermined pattern of electronic components, circuits, wirings, etc., is drawn and exposed on the illuminated surface of the substrate P. That is, using the sub-scanning of the substrate P and the main scanning of the spot light SP, the spot light SP is relatively two-dimensionally scanned on the illuminated surface of the substrate P (the surface of the photosensitive functional layer), and the spot light SP is scanned on the illuminated surface of the substrate P. Describe the pattern of exposure established. In addition, since the substrate P is transported in the longitudinal direction, the exposed regions of the pattern exposed by the exposure device EX are provided at a predetermined interval along the longitudinal direction of the substrate P and are provided in plural. Since electronic components are formed in the exposed area, the exposed area is also an element formation area.
如圖1所示,旋轉筒DR具有於Y方向上延伸並且於與重力起作用之方向交叉之方向上延伸之中心軸AXo、及自中心軸AXo起為固定半徑之圓筒狀之外周面。旋轉筒DR一面沿著該外周面(圓周面)將基板P之一部分於長條方 向上呈圓筒面狀彎曲地予以支持(保持),一面以中心軸AXo為中心旋轉而將基板P朝長條方向搬送。旋轉筒DR利用其外周面對被投射來自複數個描繪單元Un(U1~U6)之各者之光束LB(點光SP)之基板P上的區域(部分)予以支持。旋轉筒DR自與形成電子元件之面(形成有感光面之側之面)為相反側之面(背面)側支持(密接保持)基板P。再者,於旋轉筒DR之Y方向之兩側,設置有以使旋轉筒DR繞中心軸AXo旋轉之方式由軸承支持之未圖示之軸。對該軸賦予來自未圖示之旋轉驅動源(例如馬達或減速機構等)之旋轉轉矩,旋轉筒DR繞中心軸AXo以固定之旋轉速度旋轉。 As shown in FIG. 1, the rotating drum DR has a central axis AXo extending in the Y direction and extending in a direction crossing the direction in which gravity acts, and a cylindrical outer peripheral surface having a fixed radius from the central axis AXo. The rotating drum DR supports (holds) a part of the substrate P in the shape of a cylindrical surface along the outer peripheral surface (circumferential surface) in the longitudinal direction, and rotates around the central axis AXo to extend the substrate P. Convey in the same direction. The rotating drum DR is supported by its outer peripheral surface on the area (part) on the substrate P on which the light beam LB (point light SP) from each of the plurality of drawing units Un (U1 to U6) is projected. The rotating drum DR supports (holds in close contact) the substrate P from the surface (rear surface) opposite to the surface on which the electronic component is formed (the surface on which the photosensitive surface is formed). Furthermore, on both sides of the Y direction of the rotating drum DR, there are provided shafts (not shown) supported by bearings in such a way that the rotating drum DR rotates around the central axis AXo. A rotation torque from a rotation drive source (for example, a motor or a deceleration mechanism, etc.) not shown in the figure is applied to the shaft, and the rotating drum DR rotates at a fixed rotation speed around the central axis AXo.
光源裝置(脈衝光源裝置)LS產生並射出脈衝狀之光束(脈衝光束、脈衝光、雷射)LB。該光束LB為具有對基板P之感光層之感度且於370nm以下之波長頻帶具有峰值波長之紫外線光。光源裝置LS按照文中未圖示之描繪控制裝置之控制,以頻率(振盪頻率、既定頻率)Fa發出並射出脈衝狀之光束LB。該光源裝置LS係設為光纖放大雷射光源,其係由產生紅外波長區域之脈衝光之半導體雷射元件、光纖放大器、及將經放大之紅外波長區域之脈衝光轉換為紫外波長區域之脈衝光的波長轉換元件(諧波產生元件)等構成。藉由如此構成光源裝置LS,可獲得振盪頻率Fa為數百MHz且1脈衝光之發光時間為數十微微秒以下之高亮度之紫外線之脈衝光。再者,自光源裝置LS射出之光束LB成為光束徑為1mm左右或其以下之較細之平行光束。關於將光源裝置LS設為光纖放大雷射光源並根據構成描繪資料之像素之狀態(以邏輯值計為「0」或「1」)使光束LB之脈衝產生高速地接通/斷開之構成,揭示於國際公開公報第2015/166910號中。 The light source device (pulse light source device) LS generates and emits a pulsed light beam (pulse light beam, pulse light, laser) LB. The light beam LB is ultraviolet light having sensitivity to the photosensitive layer of the substrate P and having a peak wavelength in the wavelength band below 370 nm. The light source device LS emits and emits a pulsed light beam LB at a frequency (oscillation frequency, predetermined frequency) Fa under the control of a drawing control device not shown in the text. The light source device LS is set as a fiber-amplified laser light source, which is composed of a semiconductor laser element that generates pulsed light in the infrared wavelength region, an optical fiber amplifier, and converts the amplified pulsed light in the infrared wavelength region into pulses in the ultraviolet wavelength region Light wavelength conversion element (harmonic generation element) and other components. By configuring the light source device LS in this way, it is possible to obtain high-brightness ultraviolet pulse light with an oscillation frequency Fa of several hundred MHz and a light emission time of one pulse light of several tens of picoseconds or less. Furthermore, the light beam LB emitted from the light source device LS becomes a relatively thin parallel light beam with a beam diameter of about 1 mm or less. Regarding the configuration that the light source device LS is set as a fiber-amplified laser light source and the pulse of the light beam LB is turned on/off at a high speed according to the state of the pixels constituting the drawing data (the logical value is "0" or "1") , Disclosed in International Public Bulletin No. 2015/166910.
自光源裝置LS射出之光束LB係透過光束切換部而選擇性(擇一性)地供給至描繪單元Un(U1~U6)之各者,該光束切換部係由作為複數個開關元件之選擇用光學元件OSn(OS1~OS6)、複數個反射鏡M1~M12、複數個 入射鏡IMn(IM1~IM6)、及吸收體TR等構成。選擇用光學元件OSn(OS1~OS6)係對光束LB具有透過性,且由聲光調變元件(AOM:Acousto-Optic Modulator)構成,該聲光調變元件係由超音波訊號驅動,使入射之光束LB之1次繞射光以既定之角度偏向地射出。複數個選擇用光學元件OSn及複數個入射鏡IMn係對應於複數個描繪單元Un之各者而設置。例如,選擇用光學元件OS1與入射鏡IM1係對應於描繪單元U1而設置,同樣地,選擇用光學元件OS2~OS6及入射鏡IM2~IM6係分別對應於描繪單元U2~U6而設置。 The light beam LB emitted from the light source device LS is selectively (selectively) supplied to each of the drawing units Un (U1~U6) through the beam switching part, which is used as a selection of a plurality of switching elements The optical element OSn (OS1~OS6), a plurality of reflecting mirrors M1~M12, a plurality of incident mirrors IMn (IM1~IM6), and an absorber TR are composed. The optical element OSn (OS1~OS6) for selection is transparent to the light beam LB, and is composed of an acousto-optic modulator (AOM: Acousto-Optic Modulator), which is driven by an ultrasonic signal to make the incident light The primary diffracted light of the light beam LB is deflected and emitted at a predetermined angle. The plural optical elements OSn for selection and the plural incident mirrors IMn are provided corresponding to each of the plural drawing units Un. For example, the selection optical element OS1 and the incident mirror IM1 are provided corresponding to the drawing unit U1, and similarly, the selection optical elements OS2 to OS6 and the incident mirror IM2 to IM6 are provided corresponding to the drawing units U2 to U6, respectively.
自光源裝置LS,光束LB藉由反射鏡M1~M12使其光路彎曲成曲折狀地被引導至吸收體TR。以下,於選擇用光學元件OSn(OS1~OS6)均為斷開狀態(未施加有超音波訊號,而未產生1次繞射光之狀態)之情形時進行詳細敍述。再者,圖1中雖省略圖示,但於自反射鏡M1至吸收體TR為止之光束光路中設置有複數個透鏡,該等複數個透鏡係將光束LB自平行光束收斂或使收斂後發散之光束LB恢復為平行光束。該構成將於下文使用圖4進行說明。 From the light source device LS, the light beam LB is guided to the absorber TR by bending its optical path in a zigzag shape by the mirrors M1 to M12. Hereinafter, it will be described in detail when the optical elements OSn (OS1~OS6) for selection are all in an off state (a state where ultrasonic signals are not applied and no primary diffracted light is generated). In addition, although illustration is omitted in FIG. 1, a plurality of lenses are provided in the light beam path from the mirror M1 to the absorber TR. The plurality of lenses converge the light beam LB from the parallel light beam or diverge after converging. The beam LB is restored to a parallel beam. This structure will be explained using FIG. 4 below.
於圖1中,來自光源裝置LS之光束LB與X軸平行地朝-X方向行進並入射至反射鏡M1。由反射鏡M1朝-Y方向反射之光束LB入射至反射鏡M2。由反射鏡M2朝+X方向反射之光束LB直接透過選擇用光學元件OS5並到達反射鏡M3。由反射鏡M3朝-Y方向反射之光束LB入射至反射鏡M4。由反射鏡M4朝-X方向反射之光束LB直接透過選擇用光學元件OS6並到達反射鏡M5。由反射鏡M5朝-Y方向反射之光束LB入射至反射鏡M6。由反射鏡M6朝+X方向反射之光束LB直接透過選擇用光學元件OS3並到達反射鏡M7。由反射鏡M7朝-Y方向反射之光束LB入射至反射鏡M8。由反射鏡M8朝-X方向反射之光束LB直接透過選擇用光學元件OS4並到達反射鏡M9。由反射鏡M9朝-Y方向反射之光束LB入射至反射鏡M10。由反射鏡M10朝+X方向反射之光束LB直接透過選擇用光學元件OS1並到達反射鏡M11。由反射鏡M11朝-Y方向反射之光束LB入射至反射鏡M12。由反 射鏡M12朝-X方向反射之光束LB直接透過選擇用光學元件OS2並被引導至吸收體TR。該吸收體TR係為抑制光束LB之向外部之洩漏而吸收光束LB之光陷阱。 In FIG. 1, the light beam LB from the light source device LS travels in the -X direction parallel to the X axis and is incident on the mirror M1. The light beam LB reflected in the -Y direction by the mirror M1 is incident on the mirror M2. The light beam LB reflected in the +X direction by the mirror M2 directly passes through the selection optical element OS5 and reaches the mirror M3. The light beam LB reflected in the -Y direction by the mirror M3 is incident on the mirror M4. The light beam LB reflected in the -X direction by the mirror M4 directly passes through the selection optical element OS6 and reaches the mirror M5. The light beam LB reflected in the -Y direction by the mirror M5 is incident on the mirror M6. The light beam LB reflected in the +X direction by the mirror M6 directly passes through the selection optical element OS3 and reaches the mirror M7. The light beam LB reflected in the -Y direction by the mirror M7 is incident on the mirror M8. The light beam LB reflected in the -X direction by the mirror M8 directly passes through the selection optical element OS4 and reaches the mirror M9. The light beam LB reflected in the -Y direction by the mirror M9 is incident on the mirror M10. The light beam LB reflected in the +X direction by the mirror M10 directly passes through the selection optical element OS1 and reaches the mirror M11. The light beam LB reflected in the -Y direction by the mirror M11 is incident on the mirror M12. The light beam LB reflected in the -X direction by the mirror M12 directly passes through the selection optical element OS2 and is guided to the absorber TR. The absorber TR is a light trap that absorbs the light beam LB in order to suppress the leakage of the light beam LB to the outside.
各選擇用光學元件OSn係當被施加超音波訊號(高頻訊號)時,產生使入射之光束(0次光)LB以與高頻之頻率相應之繞射角繞射而得之1次繞射光作為射出光束(光束LBn)。因此,自選擇用光學元件OS1作為1次繞射光射出之光束成為LB1,同樣地,自選擇用光學元件OS2~OS6作為1次繞射光射出之光束成為LB2~LB6。如此,各選擇用光學元件OSn(OS1~OS6)發揮使來自光源裝置LS之光束LB之光路偏向之功能。但,實際之聲光調變元件由於1次繞射光之產生效率為0次光之80%左右,故而藉由選擇用光學元件OSn之各者而偏向之光束LBn(LB1~LB6)較原本之光束LB之強度降低。又,於本實施形態中,以選擇用光學元件OSn(OS1~OS6)中之被選擇之一者以僅有固定時間成為接通狀態之方式,藉由未圖示之描繪控制裝置進行控制。於被選擇之1個選擇用光學元件OSn為接通狀態時,未藉由該選擇用光學元件OSn進行繞射而直行之0次光殘存20%左右,但其最終會被吸收體TR吸收。 Each optical element OSn for selection is a primary winding obtained by diffracting the incident light beam (zero-order light) LB at a diffraction angle corresponding to the high-frequency frequency when an ultrasonic signal (high-frequency signal) is applied. The emitted light is an emitted light beam (light beam LBn). Therefore, the light beam emitted from the optical element for selection OS1 as the primary diffracted light becomes LB1, and similarly, the light beam emitted from the optical element for selection OS2 to OS6 as the primary diffracted light becomes LB2 to LB6. In this way, each optical element OSn (OS1 to OS6) for selection functions to deflect the optical path of the light beam LB from the light source device LS. However, since the actual acousto-optic modulating element generates about 80% of the first-order diffracted light, the light beam LBn (LB1~LB6) deflected by selecting each of the optical elements OSn is better than the original one. The intensity of the light beam LB decreases. In addition, in this embodiment, the selected one of the optical elements OSn (OS1 to OS6) for selection is controlled by a drawing control device not shown in such a way that the selected one is turned on for only a fixed time. When the one selected optical element OSn for selection is in the ON state, about 20% of the zero-order light traveling straight without being diffracted by the optical element OSn for selection remains about 20%, but it is eventually absorbed by the absorber TR.
選擇用光學元件OSn之各者係以使作為經偏向之1次繞射光之光束LBn(LB1~LB6)相對於入射之光束LB朝-Z方向偏向之方式設置。藉由選擇用光學元件OSn之各者而偏向並射出之光束LBn(LB1~LB6)被投射至設置於與選擇用光學元件OSn之各者隔開既定距離之位置的入射鏡IMn(IM1~IM6)。各入射鏡IMn藉由將入射之光束LBn(LB1~LB6)朝-Z方向反射,而將光束LBn(LB1~LB6)引導至各自對應之描繪單元Un(U1~U6)。 Each of the optical elements OSn for selection is set in such a way that the light beams LBn (LB1 to LB6) as the deflected primary diffracted light are deflected in the -Z direction with respect to the incident light beam LB. The light beams LBn (LB1~LB6) deflected and emitted by each of the selection optical elements OSn are projected to the incident mirror IMn (IM1~IM6) which is provided at a position separated from each of the selection optical elements OSn by a predetermined distance. ). Each incident mirror IMn guides the light beam LBn (LB1~LB6) to the corresponding drawing unit Un (U1~U6) by reflecting the incident light beam LBn (LB1~LB6) in the -Z direction.
亦可使用各選擇用光學元件OSn之構成、功能、作用等相同者。複數個選擇用光學元件OSn之各者係按照來自描繪控制裝置之驅動訊號(超音波訊號)之接通/斷開,將使入射之光束LB繞射之繞射光之產生接通/斷開。例如,選擇用光學元件OS5於未被施加來自描繪控制裝置之驅動訊號(高頻訊號)而為 斷開狀態時,使所入射之來自光源裝置LS之光束LB不繞射地透過。因此,透過選擇用光學元件OS5之光束LB入射至反射鏡M3。另一方面,於選擇用光學元件OS5為接通狀態時,使所入射之光束LB繞射並朝向入射鏡IM5。即,根據該驅動訊號之接通/斷開而控制利用選擇用光學元件OS5所進行之切換(光束選擇)動作。如此,藉由各選擇用光學元件OSn之切換動作,可將來自光源裝置LS之光束LB引導至任一個描繪單元Un,且可切換光束LBn所入射之描繪單元Un。如此,關於相對於來自光源裝置LS之光束LB串聯(串列)地配置複數個選擇用光學元件OSn並向對應之描繪單元Un分時地供給光束LBn之構成,揭示於國際公開公報第2015/166910號中。 It is also possible to use those having the same configuration, function, and function of each optical element OSn for selection. Each of the plurality of optical elements OSn for selection is turned on/off according to the on/off of the driving signal (ultrasonic signal) from the drawing control device, which turns on/off the generated diffracted light that is diffracted by the incident light beam LB. For example, when the optical element OS5 for selection is in an off state without applying a driving signal (high-frequency signal) from the drawing control device, it transmits the incident light beam LB from the light source device LS without being diffracted. Therefore, the light beam LB transmitted through the optical element OS5 for selection enters the mirror M3. On the other hand, when the optical element OS5 for selection is in the ON state, the incident light beam LB is diffracted and directed toward the incident mirror IM5. That is, the switching (beam selection) operation performed by the selection optical element OS5 is controlled based on the on/off of the drive signal. In this way, by the switching operation of each optical element OSn for selection, the light beam LB from the light source device LS can be guided to any drawing unit Un, and the drawing unit Un into which the light beam LBn is incident can be switched. In this way, regarding the configuration in which a plurality of optical elements OSn for selection are arranged in series (tandem) with respect to the light beam LB from the light source device LS, and the light beam LBn is supplied to the corresponding drawing unit Un in a time-division manner, it is disclosed in International Publication No. 2015/ No. 166910.
構成光束切換部之選擇用光學元件OSn(OS1~OS6)之各者以固定時間成為接通狀態之順序例如預先決定為OS1→OS2→OS3→OS4→OS5→OS6→OS1→…。該順序係根據對描繪單元Un(U1~U6)之各者設定之利用點光之掃描開始時序的順序而決定。即,於本實施形態中,使設置於6個描繪單元U1~U6之各者之多面鏡之旋轉速度同步,並且使旋轉角度之相位亦同步,藉此,描繪單元U1~U6中之任一者之多面鏡之1個反射面能以於基板P上進行1次光點掃描方式分時地切換。因此,只要描繪單元Un之各者之多面鏡之旋轉角度的相位為以既定之關係同步之狀態,則描繪單元Un之光點掃描之順序可為任意。於圖1之構成中,在基板P之搬送方向(旋轉筒DR之外周面於圓周方向上移動之方向)之上游側,3個描繪單元U1、U3、U5在Y方向上排列地配置,在基板P之搬送方向之下游側,3個描繪單元U2、U4、U6在Y方向上排列地配置。 The order in which the optical elements OSn (OS1~OS6) for selection constituting the light beam switching unit are turned on at a fixed time is predetermined, for example, OS1→OS2→OS3→OS4→OS5→OS6→OS1→…. The sequence is determined according to the sequence of the start sequence of scanning with spot light set for each of the drawing units Un (U1~U6). That is, in this embodiment, the rotation speeds of the polygon mirrors provided in each of the six drawing units U1 to U6 are synchronized, and the phases of the rotation angles are also synchronized, whereby any one of the drawing units U1 to U6 is synchronized. One reflecting surface of the polygon mirror can be switched in a time-sharing manner by performing a spot scan on the substrate P. Therefore, as long as the phases of the rotation angles of the polygon mirrors of the drawing unit Un are synchronized with a predetermined relationship, the order of the light spot scanning of the drawing unit Un can be arbitrary. In the configuration of FIG. 1, on the upstream side of the conveying direction of the substrate P (the direction in which the outer peripheral surface of the rotating drum DR moves in the circumferential direction), three drawing units U1, U3, and U5 are arranged side by side in the Y direction. On the downstream side of the conveyance direction of the substrate P, three drawing units U2, U4, and U6 are arranged side by side in the Y direction.
於此情形時,向基板P之圖案描繪係自上游側之第奇數個描繪單元U1、U3、U5開始,且基板P被搬送固定長度後,下游側之第偶數個描繪單元U2、U4、U6亦開始圖案描繪,故而可將描繪單元Un之光點掃描之順序設定為U1→U3→U5→U2→U4→U6→U1→…。因此,選擇用光學元件OSn(OS1~OS6) 之各者以固定時間成為接通狀態之順序被決定為OS1→OS3→OS5→OS2→OS4→OS6→OS1→…。再者,即便於與沒有須描繪之圖案之描繪單元Un對應之選擇用光學元件OSn成為接通狀態之順序時,亦可根據描繪資料而進行選擇用光學元件OSn之接通/斷開之切換控制,藉此,可強制性地維持於斷開狀態,因此不會進行利用該描繪單元Un之光點掃描。 In this case, the pattern drawing on the substrate P starts from the odd-numbered drawing units U1, U3, U5 on the upstream side, and after the substrate P is transported for a fixed length, the even-numbered drawing units U2, U4, U6 on the downstream side The pattern drawing is also started, so the order of the light spot scanning of the drawing unit Un can be set as U1→U3→U5→U2→U4→U6→U1→.... Therefore, the order in which each of the selection optical elements OSn (OS1~OS6) is turned on at a fixed time is determined as OS1→OS3→OS5→OS2→OS4→OS6→OS1→…. Furthermore, even in the sequence in which the selection optical element OSn corresponding to the drawing unit Un with no pattern to be drawn is turned on, the selection optical element OSn can be switched on/off according to the drawing data. By this control, it can be forcibly maintained in the off state, so that the light spot scanning using the drawing unit Un is not performed.
如圖1所示,於描繪單元U1~U6之各者,設置有用以使所入射之光束LB1~LB6進行主掃描之多面鏡PM。於本實施形態中,各描繪單元Un之多面鏡PM之各者被以如下方式進行同步控制,即,一面以相同之旋轉速度精密地旋轉,一面相互保持固定之旋轉角度相位。藉此,能以互不重複之方式設定自描繪單元U1~U6之各者投射至基板P之光束LB1~LB6之各者之主掃描的時序(點光SP之主掃描期間)。因此,藉由與6個多面鏡PM之各者之旋轉角度位置同步地控制設置於光束切換部之選擇用光學元件OSn(OS1~OS6)之各者之接通/斷開之切換,可實現將來自光源裝置LS之光束LB分時地分配至複數個描繪單元Un之各者之有效率之曝光處理。 As shown in FIG. 1, each of the drawing units U1 to U6 is provided with a polygon mirror PM for main scanning of the incident light beams LB1 to LB6. In this embodiment, each of the polygon mirrors PM of each drawing unit Un is synchronously controlled in such a way that one side precisely rotates at the same rotation speed, and the other side maintains a fixed rotation angle phase with each other. Thereby, the main scanning timing of each of the light beams LB1 to LB6 projected from each of the drawing units U1 to U6 to the substrate P (the main scanning period of the spot light SP) can be set in a manner that does not overlap each other. Therefore, by synchronously controlling the on/off switching of each of the selection optical elements OSn (OS1~OS6) provided in the beam switching part with the rotation angle position of each of the 6 polygon mirrors PM, it can be realized An efficient exposure process for distributing the light beam LB from the light source device LS to each of the plurality of drawing units Un in a time-sharing manner.
關於6個多面鏡PM之各者之旋轉角度之相位對準與選擇用光學元件OSn(OS1~OS6)之各者之接通/斷開之切換時序的同步控制,揭示於國際公開公報第2015/166910號中,但於8面多面鏡PM之情形時,關於掃描效率,由於係相應於1個反射面之旋轉角度(45度)中之1/3左右對應於描繪線SLn上之點光SP之1次掃描,故而以如下方式控制選擇用光學元件OSn(OS1~OS6)之各者之接通/斷開之切換,即,使6個多面鏡PM相對地令旋轉角度之相位各偏移15度而旋轉,並且將各多面鏡PM之8個反射面跳過一面而使光束LBn進行掃描。如此,關於將多面鏡PM之反射面跳過一面而使用之描繪方式,亦揭示於國際公開公報第2015/166910號中。 The synchronization control of the phase alignment of the rotation angle of each of the 6 polygon mirrors PM and the on/off switching timing of each of the selection optical elements OSn (OS1~OS6) is disclosed in International Publication No. 2015 In No. /166910, in the case of 8-sided polygon mirror PM, the scanning efficiency is because about 1/3 of the rotation angle (45 degrees) corresponding to one reflecting surface corresponds to the point light on the drawing line SLn. One scan of SP, therefore, the switching of ON/OFF of each of the selection optical elements OSn (OS1~OS6) is controlled in the following way, that is, the 6 polygon mirrors PM are relatively shifted in the phase of the rotation angle. It is moved 15 degrees and rotated, and 8 reflecting surfaces of each polygon mirror PM are skipped over one surface to scan the light beam LBn. In this way, the drawing method used to skip the reflective surface of the polygon mirror PM is also disclosed in International Publication No. 2015/166910.
如圖1所示,曝光裝置EX成為排列有相同構成之複數個描繪單元 Un(U1~U6)之所謂多讀頭型之直描曝光法。描繪單元Un之各者對由旋轉筒DR之外周面(圓周面)支持之基板P之於Y方向上經劃分之每個局部區域描繪圖案。各描繪單元Un(U1~U6)一面將來自光束切換部之光束LBn投射至基板P上(基板P之被照射面上),一面使光束LBn聚光(收斂)於基板P上。藉此,投射至基板P上之光束LBn(LB1~LB6)成為點光SP。又,藉由各描繪單元Un之多面鏡PM之旋轉,而使投射至基板P上之光束LBn(LB1~LB6)之點光SP於主掃描方向(Y方向)上進行掃描。藉由該點光SP之掃描,而於基板P上規定出用於描繪1行量之圖案之線性之描繪線(掃描線)SLn(再者,n=1、2、…、6)。描繪線SLn亦為光束LBn之點光SP之基板P上之掃描軌跡。 As shown in Fig. 1, the exposure apparatus EX adopts a so-called multi-head type direct drawing exposure method in which a plurality of drawing units Un (U1 to U6) of the same configuration are arranged. Each of the drawing units Un draws a pattern for each local area divided in the Y direction of the substrate P supported by the outer peripheral surface (circumferential surface) of the rotating drum DR. Each drawing unit Un (U1 to U6) projects the light beam LBn from the light beam switching unit onto the substrate P (the illuminated surface of the substrate P), and condenses (converges) the light beam LBn on the substrate P. Thereby, the light beam LBn (LB1 to LB6) projected on the substrate P becomes the spot light SP. In addition, by the rotation of the polygon mirror PM of each drawing unit Un, the spot light SP of the light beam LBn (LB1 to LB6) projected on the substrate P is scanned in the main scanning direction (Y direction). By the scanning of the spot light SP, a linear drawing line (scanning line) SLn (n=1, 2, ..., 6) for drawing a pattern of one line is defined on the substrate P. The drawing line SLn is also the scanning track on the substrate P of the spot light SP of the light beam LBn.
描繪單元U1使點光SP沿著描繪線SL1進行掃描,同樣地,描繪單元U2~U6使點光SP沿著描繪線SL2~SL6進行掃描。如圖1所示,複數個描繪單元Un(U1~U6)之描繪線SLn(SL1~SL6)係隔著包含旋轉筒DR之中心軸AXo且與YZ面平行之中心面,於旋轉筒DR之圓周方向上呈2行錯位排列地配置。第奇數個描繪線SL1、SL3、SL5位於相對於中心面為基板P之搬送方向之上游側(-X方向側)之基板P的被照射面上,且沿著Y方向隔開既定之間隔配置成1行。第偶數個描繪線SL2、SL4、SL6位於相對於中心面為基板P之搬送方向之下游側(+X方向側)之基板P的被照射面上,且沿著Y方向隔開既定之間隔配置成1行。因此,複數個描繪單元Un(U1~U6)亦隔著中心面於基板P之搬送方向上呈2行錯位排列地配置,若於XZ平面內觀察,則第奇數個描繪單元U1、U3、U5與第偶數個描繪單元U2、U4、U6相對於中心面對稱地設置。 The drawing unit U1 scans the spot light SP along the drawing line SL1. Similarly, the drawing units U2 to U6 scan the spot light SP along the drawing lines SL2 to SL6. As shown in Figure 1, the drawing lines SLn (SL1~SL6) of the plurality of drawing units Un (U1~U6) are separated by the center plane including the central axis AXo of the rotating drum DR and parallel to the YZ plane, and are located on the center plane of the rotating drum DR. It is arranged in a staggered arrangement in two rows in the circumferential direction. The odd-numbered drawing lines SL1, SL3, SL5 are located on the irradiated surface of the substrate P on the upstream side (-X direction side) of the conveying direction of the substrate P with respect to the center surface, and are arranged at a predetermined interval along the Y direction Into 1 row. The even-numbered drawing lines SL2, SL4, SL6 are located on the irradiated surface of the substrate P on the downstream side (+X direction side) in the conveying direction of the substrate P with respect to the center surface, and are arranged at predetermined intervals along the Y direction Into 1 row. Therefore, a plurality of drawing units Un (U1 to U6) are also arranged in a staggered arrangement in two rows in the conveying direction of the substrate P across the center plane. If viewed in the XZ plane, the odd-numbered drawing units U1, U3, U5 The even-numbered drawing units U2, U4, U6 are arranged symmetrically with respect to the center plane.
設定為於X方向(基板P之搬送方向)上第奇數個描繪線SL1、SL3、SL5與第偶數個描繪線SL2、SL4、SL6相互隔開,但於Y方向(基板P之寬度方向、主掃描方向)上未相互分離地接合。描繪線SL1~SL6與基板P之寬度方向、即旋轉筒DR之中心軸AXo大致平行。再者,使描繪線SLn於Y方向上接合意 味著如使描繪線SLn之端部彼此之Y方向之位置鄰接或局部重複的關係。於使描繪線SLn之端部彼此重複之情形時,例如宜在相對於各描繪線SLn之長度而言包含描繪開始點或描繪結束點在內於Y方向以數%以下之範圍重複。 It is set so that the odd-numbered drawing lines SL1, SL3, SL5 and the even-numbered drawing lines SL2, SL4, SL6 are separated from each other in the X direction (the transport direction of the substrate P), but in the Y direction (the width direction of the substrate P, the main In the scanning direction), they are joined without being separated from each other. The drawing lines SL1 to SL6 are substantially parallel to the width direction of the substrate P, that is, the central axis AXo of the rotating drum DR. Furthermore, joining the drawing line SLn in the Y direction means that the ends of the drawing line SLn are adjacent to each other or partially overlapped in the Y direction. When the ends of the drawing lines SLn are overlapped with each other, for example, it is preferable to repeat the drawing start point or the drawing end point with respect to the length of each drawing line SLn by a few% or less in the Y direction.
如此,複數個描繪單元Un(U1~U6)以全部覆蓋基板P上之曝光區域之寬度方向之尺寸之方式分擔Y方向之掃描區域(主掃描範圍之劃分)。例如,若將1個描繪單元Un之Y方向之主掃描範圍(描繪線SLn之長度)設為30~60mm左右,則藉由於Y方向上配置共計6個描繪單元U1~U6,而將可描繪之曝光區域之Y方向之寬度擴寬至180~360mm左右。再者,各描繪線SLn(SL1~SL6)之長度(描繪範圍之長度)原則上設為相同。即,沿著描繪線SL1~SL6之各者進行掃描之光束LBn之點光SP之掃描距離原則上設為相同。 In this way, the plurality of drawing units Un (U1 to U6) share the scanning area in the Y direction (division of the main scanning area) in a manner that all covers the size of the exposure area on the substrate P in the width direction. For example, if the main scanning range (length of the drawing line SLn) in the Y direction of one drawing unit Un is set to about 30-60 mm, a total of 6 drawing units U1 to U6 in the Y direction will be able to be drawn. The width of the exposure area in the Y direction is expanded to about 180~360mm. In addition, the length of each drawing line SLn (SL1 to SL6) (the length of the drawing range) is set to be the same in principle. That is, the scanning distance of the spot light SP of the light beam LBn scanned along each of the drawing lines SL1 to SL6 is set to be the same in principle.
於本實施形態之情形時,當來自光源裝置LS之光束LB為發光時間為數十微微秒以下之脈衝光時,於主掃描期間投射至描繪線SLn上之點光SP根據光束LB之振盪頻率Fa(例如400MHz)而離散。因此,必須使藉由光束LB之1脈衝光而投射之點光SP與藉由接下來之1脈衝光而投射之點光SP於主掃描方向重疊。該重疊之量係根據點光SP之大小Φ、點光SP之掃描速度(主掃描之速度)Vs、及光束LB之振盪頻率Fa而設定。於點光SP之強度分佈以高斯分佈近似之情形時,點光SP之有效大小(直徑)Φ由成為點光SP之波峰強度之1/e2(或1/2)之強度的寬度尺寸決定。於本實施形態中,以點光SP相對於有效大小(尺寸)Φ而言重疊Φ×1/2左右之方式,設定點光SP之掃描速度Vs(多面鏡PM之旋轉速度)及振盪頻率Fa。因此,脈衝狀之點光SP之沿著主掃描方向之投射間隔成為Φ/2。因此,較理想為以於副掃描方向(與描繪線SLn正交之方向)上,於沿著描繪線SLn之點光SP之1次掃描與下一次掃描之間,基板P亦移動點光SP之有效大小Φ之大致1/2之距離的方式設定。進而,較理想為於使在Y方向上相鄰之描繪線SLn於主掃描方向上連續之情形時,亦使其重疊Φ/2。於本實施形態中,將點光SP之大 小(尺寸)Φ設為3~4μm左右。 In the case of this embodiment, when the light beam LB from the light source device LS is pulsed light with a light emission time of tens of picoseconds or less, the spot light SP projected on the drawing line SLn during the main scanning period depends on the oscillation frequency of the light beam LB Fa (for example, 400MHz) is discrete. Therefore, it is necessary to overlap the spot light SP projected by one pulse light of the light beam LB and the spot light SP projected by the next pulse light in the main scanning direction. The amount of overlap is set according to the size Φ of the spot light SP, the scanning speed of the spot light SP (the speed of the main scanning) Vs, and the oscillation frequency Fa of the light beam LB. When the intensity distribution of the spot light SP is approximated by a Gaussian distribution, the effective size (diameter) Φ of the spot light SP is determined by the width of the intensity that becomes 1/e 2 (or 1/2) of the peak intensity of the spot light SP . In this embodiment, the scanning speed Vs (rotation speed of the polygon mirror PM) and the oscillation frequency Fa of the spot light SP are set such that the spot light SP overlaps Φ×1/2 with respect to the effective size (size) Φ. . Therefore, the projection interval of the pulse-shaped spot light SP along the main scanning direction becomes Φ/2. Therefore, it is preferable that in the sub-scanning direction (direction orthogonal to the drawing line SLn), the substrate P also moves the spot light SP between the first scan and the next scan of the spot light SP along the drawing line SLn The effective size Φ is approximately 1/2 of the distance. Furthermore, it is more desirable to also overlap Φ/2 when the drawing lines SLn adjacent in the Y direction are continuous in the main scanning direction. In this embodiment, the size (dimension) Φ of the spot light SP is set to approximately 3 to 4 μm.
各描繪單元Un(U1~U6)係以於XZ平面內觀察時,各光束LBn朝向旋轉筒DR之中心軸AXo行進之方式設定。藉此,自各描繪單元Un(U1~U6)朝向基板P行進之光束LBn之光路(光束主光線)於XZ平面與基板P之被照射面之法線平行。又,自各描繪單元Un(U1~U6)照射至描繪線SLn(SL1~SL6)之光束LBn係以相對於呈圓筒面狀彎曲之基板P之表面之描繪線SLn處的切面始終垂直之方式朝向基板P投射。即,於點光SP之主掃描方向上,投射至基板P之光束LBn(LB1~LB6)係以遠心之狀態進行掃描。 Each drawing unit Un (U1~U6) is set in such a way that when viewed in the XZ plane, each light beam LBn travels toward the central axis AXo of the rotating drum DR. Thereby, the optical path of the light beam LBn (beam chief ray) traveling from each drawing unit Un (U1 to U6) toward the substrate P is parallel to the normal line of the illuminated surface of the substrate P on the XZ plane. In addition, the light beam LBn irradiated from each drawing unit Un (U1~U6) to the drawing line SLn (SL1~SL6) is always perpendicular to the cutting plane at the drawing line SLn of the surface of the substrate P curved in a cylindrical shape. Projected toward the substrate P. That is, in the main scanning direction of the spot light SP, the light beams LBn (LB1 to LB6) projected to the substrate P are scanned in a telecentric state.
圖1所示之描繪單元(光束掃描裝置)Un成為相同構成,故而僅簡單地說明描繪單元U1。描繪單元U1之詳細構成將於下文參照圖2進行說明。描繪單元U1至少具備反射鏡M20~M24、多面鏡PM、及fθ透鏡系統(描繪用掃描透鏡)FT。再者,於圖1中,雖然未圖示,但自光束LB1之行進方向觀察,於多面鏡PM之近前配置有第1柱面透鏡CYa(參照圖2),於fθ透鏡系統(f-θ透鏡系統)FT之後設置有第2柱面透鏡CYb(參照圖2)。藉由第1柱面透鏡CYa與第2柱面透鏡CYb而修正由多面鏡PM之各反射面之傾斜誤差所致之點光SP(描繪線SL1)之朝副掃描方向之位置變動。 The drawing unit (beam scanning device) Un shown in FIG. 1 has the same configuration, so only the drawing unit U1 will be briefly described. The detailed structure of the drawing unit U1 will be described below with reference to FIG. 2. The drawing unit U1 includes at least mirrors M20 to M24, a polygon mirror PM, and an fθ lens system (scanning lens for drawing) FT. Furthermore, in FIG. 1, although not shown, when viewed from the traveling direction of the light beam LB1, the first cylindrical lens CYa (refer to FIG. 2) is arranged in front of the polygon mirror PM, and the lens system (f-θ A second cylindrical lens CYb (refer to FIG. 2) is provided after the lens system) FT. The first cylindrical lens CYa and the second cylindrical lens CYb correct the positional change of the spot light SP (drawing line SL1) in the sub-scanning direction caused by the tilt error of each reflecting surface of the polygon mirror PM.
由入射鏡IM1朝-Z方向反射之光束LB1入射至設置於描繪單元U1內之反射鏡M20,於反射鏡M20反射之光束LB1朝-X方向行進並入射至反射鏡M21。利用反射鏡M21朝-Z方向反射之光束LB1入射至反射鏡M22,於反射鏡M22反射之光束LB1朝+X方向行進並入射至反射鏡M23。反射鏡M23將入射之光束LB1以朝向多面鏡PM之反射面RP於與XY平面平行之面內彎折之方式反射。 The light beam LB1 reflected by the incident mirror IM1 in the -Z direction is incident on the mirror M20 arranged in the drawing unit U1, and the light beam LB1 reflected by the mirror M20 travels in the -X direction and is incident on the mirror M21. The light beam LB1 reflected in the -Z direction by the mirror M21 enters the mirror M22, and the light beam LB1 reflected in the mirror M22 travels in the +X direction and enters the mirror M23. The reflecting mirror M23 reflects the incident light beam LB1 in a way that the reflecting surface RP of the polygon mirror PM is bent in a plane parallel to the XY plane.
多面鏡PM將所入射之光束LB1朝向fθ透鏡系統FT朝+X方向側反射。多面鏡PM為使光束LB1之點光SP於基板P之被照射面上進行掃描,而使入射之光束LB1於與XY平面平行之面內一維地偏向(反射)。具體而言,多面鏡(旋 轉多面鏡、可動偏向構件)PM係具有於Z軸方向上延伸之旋轉軸AXp、及形成於旋轉軸AXp之周圍之複數個反射面RP(本實施形態中將反射面RP之數量Np設為8)之旋轉多面鏡。可藉由使該多面鏡PM以旋轉軸AXp為中心朝既定之旋轉方向旋轉,而使照射至反射面之脈衝狀之光束LB1之反射角連續地變化。藉此,可藉由1個反射面RP使光束LB1偏向,使照射至基板P之被照射面上之光束LB1之點光SP沿著主掃描方向(基板P之寬度方向、Y方向)進行掃描。因此,於多面鏡PM轉1圈中,點光SP於基板P之被照射面上掃描之描繪線SL1之數量最大為與反射面RP之數量相同之8條。 The polygon mirror PM reflects the incident light beam LB1 toward the fθ lens system FT toward the +X direction side. The polygon mirror PM scans the spot light SP of the light beam LB1 on the illuminated surface of the substrate P, and deflects (reflects) the incident light beam LB1 one-dimensionally in a plane parallel to the XY plane. Specifically, the polygon mirror (rotating polygon mirror, movable deflection member) PM has a rotation axis AXp extending in the Z-axis direction, and a plurality of reflection surfaces RP formed around the rotation axis AXp (in this embodiment, the reflection The number Np of the surface RP is set to 8) a rotating polygon mirror. By rotating the polygon mirror PM in a predetermined rotation direction with the rotation axis AXp as the center, the reflection angle of the pulse-shaped light beam LB1 irradiated on the reflection surface can be continuously changed. Thereby, the light beam LB1 can be deflected by one reflecting surface RP, and the spot light SP of the light beam LB1 irradiated on the illuminated surface of the substrate P can be scanned along the main scanning direction (the width direction of the substrate P, the Y direction) . Therefore, in one revolution of the polygon mirror PM, the number of drawing lines SL1 scanned by the spot light SP on the illuminated surface of the substrate P is the same as the number of the reflecting surface RP at the maximum 8.
fθ透鏡系統(掃描系統透鏡、掃描用光學系統)FT係將由多面鏡PM反射之光束LB1投射至反射鏡M24之遠心系統之掃描透鏡。透過fθ透鏡系統FT之光束LB1透過反射鏡M24成為點光SP並投射至基板P上。此時,反射鏡M24係以於XZ平面內光束LB1朝向旋轉筒DR之中心軸AXo行進之方式,將光束LB1朝向基板P反射。光束LB1之朝fθ透鏡系統FT之入射角θ係根據多面鏡PM之旋轉角(θ/2)而變化。fθ透鏡系統FT係透過反射鏡M24而將光束LB1投射至與該入射角θ成比例之基板P之被照射面上之像高位置。若將fθ透鏡系統FT之焦點距離設為fo,將像高位置設為yo,則fθ透鏡系統FT被設計成滿足yo=fo×θ之關係(畸變像差)。因此,可藉由該fθ透鏡系統FT而使光束LB1於Y方向上準確地勻速進行掃描。再者,入射至fθ透鏡系統FT之光束LB1藉由多面鏡PM而一維地偏向之面(與XY面平行)成為包含fθ透鏡系統FT之光軸AXf之面。 The fθ lens system (scanning system lens, scanning optical system) FT is a scanning lens of the telecentric system that projects the light beam LB1 reflected by the polygon mirror PM to the mirror M24. The light beam LB1 that has passed through the fθ lens system FT passes through the mirror M24 to become a spot light SP and is projected onto the substrate P. At this time, the mirror M24 reflects the light beam LB1 toward the substrate P in a manner that the light beam LB1 travels toward the central axis AXo of the rotating drum DR in the XZ plane. The incident angle θ of the light beam LB1 toward the fθ lens system FT changes according to the rotation angle (θ/2) of the polygon mirror PM. The fθ lens system FT transmits the mirror M24 to project the light beam LB1 to the image height position on the illuminated surface of the substrate P proportional to the incident angle θ. If the focal distance of the fθ lens system FT is set to fo and the image height position is set to yo, the fθ lens system FT is designed to satisfy the relationship of yo=fo×θ (distortion aberration). Therefore, the light beam LB1 can be scanned accurately and uniformly in the Y direction by the fθ lens system FT. Furthermore, the surface (parallel to the XY plane) to which the light beam LB1 incident to the fθ lens system FT is one-dimensionally deflected by the polygon mirror PM becomes a surface including the optical axis AXf of the fθ lens system FT.
其次,參照圖2對描繪單元Un(U1~U6)之光學構成進行說明。如圖2所示,於描繪單元Un內,沿著自光束LBn之入射位置至被照射面(基板P)為止之光束LBn之行進方向設置有反射鏡M20、反射鏡M20a、偏振分光鏡BS1、反射鏡M21、反射鏡M22、第1柱面透鏡CYa、反射鏡M23、多面鏡PM、fθ透鏡系統FT、反射鏡M24及第2柱面透鏡CYb。進而,於描繪單元Un內,為檢測描繪 單元Un之可開始描繪之時序(點光SP之掃描開始時序),設置有作為偵測多面鏡PM之各反射面之角度位置之原點檢測感測器(原點檢測器)的光束送光系統60a及光束受光系統60b。又,於描繪單元Un內設置有光檢測器DTc,該光檢測器DTc用於透過fθ透鏡系統FT、多面鏡PM、及偏振分光鏡BS1等而檢測於基板P之被照射面(或旋轉筒DR之表面)反射之光束LBn之反射光。 Next, the optical configuration of the drawing unit Un (U1 to U6) will be described with reference to FIG. 2. As shown in FIG. 2, in the drawing unit Un, a mirror M20, a mirror M20a, and a polarization beam splitter BS1 are provided along the traveling direction of the light beam LBn from the incident position of the light beam LBn to the illuminated surface (substrate P). The reflecting mirror M21, the reflecting mirror M22, the first cylindrical lens CYa, the reflecting mirror M23, the polygon mirror PM, the fθ lens system FT, the reflecting mirror M24, and the second cylindrical lens CYb. Furthermore, in the drawing unit Un, in order to detect the drawing start timing of the drawing unit Un (scanning start timing of the spot light SP), an origin detection sensor for detecting the angular position of each reflecting surface of the polygon mirror PM is provided The
入射至描繪單元Un之光束LBn沿著與Z軸平行之光軸AX1朝-Z方向行進,且入射至相對於XY平面傾斜45°之反射鏡M20。於反射鏡M20反射之光束LBn朝向自反射鏡M20朝-X方向遠離之反射鏡M20a並朝-X方向行進。反射鏡M20a相對於YZ平面傾斜45°而配置,且將所入射之光束LBn朝向偏振分光鏡BS1朝-Y方向反射。偏振分光鏡BS1之偏振分離面相對於YZ平面傾斜45°而配置,且將P偏光之光束反射,並使朝與P偏光正交之方向偏光之直線偏光(S偏光)之光束透過。若將入射至描繪單元Un之光束LBn設為P偏光之光束,則偏振分光鏡BS1將來自反射鏡M20a之光束LBn朝-X方向反射並引導至反射鏡M21側。反射鏡M21相對於XY平面傾斜45°而配置,將所入射之光束LBn朝向自反射鏡M21朝-Z方向遠離之反射鏡M22朝-Z方向反射。由反射鏡M21反射之光束LBn入射至反射鏡M22。反射鏡M22相對於XY平面傾斜45°而配置,將所入射之光束LBn朝向反射鏡M23並朝+X方向反射。於反射鏡M22反射之光束LBn透過未圖示之λ/4波長板及柱面透鏡CYa而入射至反射鏡M23。反射鏡M23將所入射之光束LBn朝向多面鏡PM反射。 The light beam LBn incident on the drawing unit Un travels in the -Z direction along the optical axis AX1 parallel to the Z axis, and is incident on the mirror M20 inclined by 45° with respect to the XY plane. The light beam LBn reflected by the mirror M20 travels toward the mirror M20a away from the mirror M20 in the -X direction and travels in the -X direction. The mirror M20a is arranged at an angle of 45° with respect to the YZ plane, and reflects the incident light beam LBn toward the polarization beam splitter BS1 in the -Y direction. The polarization separation surface of the polarization beam splitter BS1 is arranged at an incline of 45° with respect to the YZ plane, and reflects the P-polarized light beam and transmits the linearly polarized light (S-polarized light) beam that is polarized in the direction orthogonal to the P polarization. If the light beam LBn incident on the drawing unit Un is a P-polarized light beam, the polarization beam splitter BS1 reflects the light beam LBn from the mirror M20a in the -X direction and guides it to the mirror M21 side. The mirror M21 is arranged at an angle of 45° with respect to the XY plane, and reflects the incident light beam LBn in the -Z direction toward the mirror M22 that is away from the mirror M21 in the -Z direction. The light beam LBn reflected by the mirror M21 is incident on the mirror M22. The mirror M22 is arranged at an angle of 45° with respect to the XY plane, and the incident light beam LBn is directed toward the mirror M23 and reflected in the +X direction. The light beam LBn reflected by the mirror M22 passes through the λ/4 wave plate and the cylindrical lens CYa (not shown), and is incident on the mirror M23. The mirror M23 reflects the incident light beam LBn toward the polygon mirror PM.
多面鏡PM將所入射之光束LBn朝向具有與X軸平行之光軸AXf之fθ透鏡系統FT朝+X方向側反射。多面鏡PM為使光束LBn之點光SP於基板P之被照射面上進行掃描,而使入射之光束LBn於與XY平面平行之面內一維地偏向(反射)。多面鏡PM具有形成於在Z軸方向上延伸之旋轉軸AXp之周圍之複數個反射面(本實施形態中為正八邊形之各邊),且藉由與旋轉軸AXp同軸之旋轉馬 達RM而旋轉。旋轉馬達RM係藉由未圖示之描繪控制裝置而以固定之旋轉速度(例如3萬~4萬rpm左右)旋轉。如上文所作說明般,描繪線SLn(SL1~SL6)之有效長度(例如50mm)被設定為可藉由該多面鏡PM使點光SP進行掃描之最大掃描長度(例如52mm)以下之長度,就初始設定(設計上)而言,於最大掃描長度之中央設定有描繪線SLn之中心點(fθ透鏡系統FT之光軸AXf通過之點)。 The polygon mirror PM reflects the incident light beam LBn toward the fθ lens system FT having an optical axis AXf parallel to the X axis toward the +X direction side. The polygon mirror PM scans the spot light SP of the light beam LBn on the illuminated surface of the substrate P, and deflects (reflects) the incident light beam LBn one-dimensionally in a plane parallel to the XY plane. The polygon mirror PM has a plurality of reflecting surfaces (each side of the regular octagon in this embodiment) formed around the rotation axis AXp extending in the Z-axis direction, and is formed by the rotation motor RM coaxial with the rotation axis AXp Spin. The rotation motor RM is rotated at a fixed rotation speed (for example, about 30,000 to 40,000 rpm) by a drawing control device not shown. As explained above, the effective length (for example, 50mm) of the drawing lines SLn (SL1~SL6) is set to a length below the maximum scanning length (for example, 52mm) that can be scanned by the polygon mirror PM. In the initial setting (design), the center point of the drawing line SLn (the point through which the optical axis AXf of the fθ lens system FT passes) is set at the center of the maximum scanning length.
柱面透鏡CYa於與利用多面鏡PM之主掃描方向(旋轉方向)正交之副掃描方向(Z方向)上,將所入射之光束LBn收斂於多面鏡PM之反射面上。即,柱面透鏡CYa將光束LBn於多面鏡PM之反射面上收斂成於與XY平面平行之方向上延伸之狹縫狀(長橢圓狀)。藉由母線與Y方向平行之柱面透鏡CYa、及下述柱面透鏡CYb,即便於多面鏡PM之反射面自與Z軸平行之狀態傾斜之情形時,亦可抑制照射至基板P之被照射面上之光束LBn(描繪線SLn)之照射位置於副掃描方向上偏移。 The cylindrical lens CYa converges the incident light beam LBn on the reflecting surface of the polygon mirror PM in the sub-scanning direction (Z direction) orthogonal to the main scanning direction (rotation direction) of the polygon mirror PM. That is, the cylindrical lens CYa converges the light beam LBn on the reflecting surface of the polygon mirror PM into a slit shape (oblong shape) extending in a direction parallel to the XY plane. With the cylindrical lens CYa whose generatrix is parallel to the Y direction and the cylindrical lens CYb described below, even when the reflecting surface of the polygon mirror PM is tilted from the state parallel to the Z axis, the substrate P can be prevented from being irradiated The irradiation position of the light beam LBn (drawing line SLn) on the irradiation surface is shifted in the sub-scanning direction.
光束LBn之朝fθ透鏡系統FT之入射角θ(相對於光軸AXf之角度)係根據多面鏡PM之旋轉角(θ/2)而變化。於光束LBn之朝fθ透鏡系統FT之入射角θ為0度時,入射至fθ透鏡系統FT之光束LBn沿著光軸AXf上行進。來自fθ透鏡系統FT之光束LBn由反射鏡M24朝-Z方向反射,透過柱面透鏡CYb而朝基板P投射。藉由fθ透鏡系統FT及母線與Y方向平行之柱面透鏡CYb,投射至基板P之光束LBn於基板P之被照射面上收斂成直徑為數μm左右(例如2~3μm)之微小之點光SP。如上所述,於XZ平面內觀察時,入射至描繪單元Un之光束LBn沿著自反射鏡M20至基板P為止呈字狀彎曲之光路彎折,且朝-Z方向行進並投射至基板P。一面使6個描繪單元U1~U6之各者將光束LB1~LB6之各點光SP於主掃描方向(Y方向)上一維地進行掃描,一面將基板P於長條方向上進行搬送,藉此,利用點光SP將基板P之被照射面相對地進行二維掃描,於基板P上使利用描繪線SL1~SL6之各者所描繪之圖案以於Y方向上接合之狀態曝光。 The incident angle θ of the light beam LBn toward the fθ lens system FT (the angle relative to the optical axis AXf) changes according to the rotation angle (θ/2) of the polygon mirror PM. When the incident angle θ of the light beam LBn toward the fθ lens system FT is 0 degrees, the light beam LBn incident on the fθ lens system FT travels along the optical axis AXf. The light beam LBn from the fθ lens system FT is reflected by the mirror M24 in the -Z direction, passes through the cylindrical lens CYb, and is projected toward the substrate P. With the fθ lens system FT and the cylindrical lens CYb whose bus bar is parallel to the Y direction, the light beam LBn projected to the substrate P converges on the illuminated surface of the substrate P into a tiny spot light with a diameter of about several μm (for example, 2~3 μm) SP. As described above, when viewed in the XZ plane, the light beam LBn incident on the drawing unit Un follows from the mirror M20 to the substrate P. The curved light path in the shape of a letter bends, travels in the -Z direction and is projected onto the substrate P. While allowing each of the six drawing units U1 to U6 to scan each spot light SP of the beams LB1 to LB6 one-dimensionally in the main scanning direction (Y direction), while conveying the substrate P in the longitudinal direction, Here, the illuminated surface of the substrate P is relatively scanned two-dimensionally by the spot light SP, and the pattern drawn by each of the drawing lines SL1 to SL6 is exposed on the substrate P in a state of being joined in the Y direction.
作為一例,於將描繪線SLn(SL1~SL6)之有效掃描長度LT設為50mm,將點光SP之有效直徑Φ設為4μm,將來自光源裝置LS之光束LB之脈衝發光之振盪頻率Fa設為400MHz,沿著描繪線SLn(主掃描方向)使點光SP以每次重疊直徑Φ之1/2之方式脈衝發光之情形時,點光SP之脈衝發光之主掃描方向之間隔於基板P上成為2μm,該間隔對應於振盪頻率Fa之週期Tf(=1/Fa)即2.5nS(1/400MHz)。又,於此情形時,描繪資料上所規定之像素大小Pxy於基板P上被設定為4μm見方,於主掃描方向與副掃描方向之各者以點光SP之2脈衝量曝光1像素。因此,點光SP之主掃描方向之掃描速度Vsp與振盪頻率Fa被設定為Vsp=(Φ/2)/Tf之關係。另一方面,掃描速度Vsp係根據多面鏡PM之旋轉速度VR(rpm)、有效掃描長度LT、多面鏡PM之反射面之數量Np(=8)、及多面鏡PM之1個反射面RP之掃描效率1/α,以如下方式決定。 As an example, the effective scanning length LT of the drawing line SLn (SL1~SL6) is set to 50mm, the effective diameter Φ of the spot light SP is set to 4μm, and the oscillation frequency Fa of the pulse emission of the light beam LB from the light source device LS is set to For 400MHz, when the spot light SP is pulsed along the drawing line SLn (main scanning direction) in a manner that overlaps 1/2 of the diameter Φ each time, the pulse light emission of the spot light SP is separated from the substrate P in the main scanning direction The upper part becomes 2 μm, and this interval corresponds to the period Tf (=1/Fa) of the oscillation frequency Fa, that is, 2.5 nS (1/400 MHz). In this case, the pixel size Pxy specified on the drawing data is set to a 4 μm square on the substrate P, and one pixel is exposed with 2 pulses of the spot light SP in each of the main scanning direction and the sub scanning direction. Therefore, the scanning speed Vsp in the main scanning direction of the spot light SP and the oscillation frequency Fa are set to a relationship of Vsp=(Φ/2)/Tf. On the other hand, the scanning speed Vsp is based on the rotation speed VR (rpm) of the polygon mirror PM, the effective scanning length LT, the number of reflection surfaces of the polygon mirror PM Np (=8), and one reflection surface RP of the polygon mirror PM. The
Vsp=(8.α.VR.LT)/60[mm/sec] Vsp=(8.α.VR.LT)/60[mm/sec]
因此,振盪頻率Fa與旋轉速度VR(rpm)被設定為以下關係。 Therefore, the oscillation frequency Fa and the rotation speed VR (rpm) are set in the following relationship.
(Φ/2)/Tf=(8.α.VR.LT)/60…式(1) (Φ/2)/Tf=(8.α.VR.LT)/60...Equation (1)
於將振盪頻率Fa設為400MHz(Tf=2.5nS),將點光SP之直徑Φ設為4μm時,根據振盪頻率Fa而規定之掃描速度Vsp成為0.8μm/nS(=2μm/2.5nS)。為應對該掃描速度Vsp,於將掃描效率1/α設為0.3(α≒3.33),且將掃描長度LT設為50mm時,根據式(1)之關係,只要將8面之多面鏡PM之旋轉速度VR設定為36000rpm便可。再者,該情形時之掃描速度Vsp=0.8μm/nS若換算為時速則為2880Km/h。如此,若掃描速度Vsp成為高速,則亦必須提高來自決定圖案之描繪開始時序之原點感測器(光束送光系統60a與光束受光系統60b)之原點訊號之產生時序的再現性。例如,於將1像素之大小設為4μm,將應描繪之圖案之最小尺寸(最小線寬)設為8μm(相當於2像素之量)時,於已形成於基板P上之圖案重疊曝光新圖案之二次曝光時之重疊精度(所容許之位置誤差之範 圍)必須設為最小線寬之1/4~1/5左右。即,於最小線寬為8μm之情形時,位置誤差之容許範圍成為2μm~1.6μm。該值為與來自光源裝置LS之光束LB之振盪週期Tf(2.5nS)對應之點光SP之2脈衝量之間隔以下,且意味著不容許點光SP之1脈衝量之誤差。因此,決定圖案之描繪開始時序(開始位置)之原點訊號之產生時序的再現性必須設定為週期Tf(2.5nS)以下。 When the oscillation frequency Fa is set to 400 MHz (Tf=2.5nS) and the diameter Φ of the spot light SP is set to 4 μm, the scanning speed Vsp prescribed by the oscillation frequency Fa becomes 0.8 μm/nS (=2 μm/2.5nS). In order to cope with the scanning speed Vsp, when the
圖2所示之構成原點檢測感測器(以下亦簡稱為原點感測器)之光束受光系統60b係當多面鏡PM之反射面RP之旋轉位置來到即將能夠開始利用反射面RP進行之描繪用光束LBn之點光SP之掃描之前的既定位置時產生原點訊號SZn。由於多面鏡PM具有8個反射面RP,故而光束受光系統60b於多面鏡PM轉1圈中輸出8次原點訊號SZn。原點訊號SZn被送至未圖示之描繪控制裝置,自產生原點訊號SZn後經過既定之延遲時間Tdn之後,開始點光SP之沿著描繪線SLn之掃描。 The light
圖3係於XY面內觀察描繪單元Un內之多面鏡PM、fθ透鏡系統FT、及構成原點感測器(廣義之原點檢測器)等之光束受光系統60b之配置而得之圖。於圖3中表示朝向多面鏡PM之反射面RP中之1個反射面RPa投射來自光束送光系統60a之雷射光束Bga,於角度範圍θf內進行掃描之描繪用光束LBn之點光SP位於描繪線SLn之描繪開始點之瞬間之反射面RPa的角度狀態。此處,多面鏡PM之反射面RP(RPa)係以位於與fθ透鏡系統FT之光軸AXf正交之入射瞳面之方式配置。嚴格而言,於入射至fθ透鏡系統FT之光束LBn之主光線成為與光軸AXf同軸之瞬間之反射面RP(RPa)的角度位置,於自反射鏡M23朝向多面鏡PM之光束LBn之主光線與光軸AXf交叉之位置設定反射面RP(RPa)。又,自fθ透鏡系統FT之主面至基板P之表面(點光SP之聚光點)為止之距離為焦點距離fo。 FIG. 3 is a diagram obtained by observing the configuration of the polygon mirror PM, the fθ lens system FT, and the light
雷射光束Bga係作為對基板P之感光性功能層為非感光性之波長區域之平行光束而被投射至反射面RPa。於反射面RPa反射之雷射光束Bga之反 射光束Bgb於圖3之狀態下朝向fθ透鏡系統FT之方向,但相對於圖3之位置於固定時間前,反射面RPa成為反射面RPa'之角度位置,反射光束Bgb入射至構成光束受光系統60b之透鏡系統(光學元件)GLb,由反射鏡Mb反射而到達光電轉換元件(光電檢測器)DTo。反射光束Bgb(平行光束)係藉由透鏡系統GLb而於光電轉換元件DTo之受光面上聚光為點光SPr,於反射光束Bgb入射至透鏡系統GLb之期間,點光SPr以伴隨多面鏡PM之旋轉而橫穿光電轉換元件DTo之受光面之方式進行掃描,光電轉換元件(狹義之原點檢測器)DTo產生原點訊號SZn。於本實施形態中,為提高原點訊號SZn之產生時序之再現性,以與描繪用光束LBn之點光SP於基板P上的掃描速度Vsp相比,使原點檢測用反射光束Bgb之點光SPr於光電轉換元件DTo上的掃描速度變快之方式,使透鏡系統GLb之焦點距離大於fθ透鏡系統FT之焦點距離fo。 The laser beam Bga is projected to the reflective surface RPa as a parallel beam of a wavelength region in which the photosensitive functional layer of the substrate P is non-photosensitive. The reflected beam Bgb of the laser beam Bga reflected on the reflecting surface RPa faces the direction of the fθ lens system FT in the state of FIG. 3, but relative to the position of FIG. 3 before a fixed time, the reflecting surface RPa becomes the angle of the reflecting surface RPa' At the position, the reflected light beam Bgb enters the lens system (optical element) GLb constituting the light
圖4係將圖2、圖3所示之光束送光系統60a與光束受光系統60b之配置簡化而表示之圖,光束送光系統60a具備:半導體雷射光源LDo,其連續發出雷射光束Bga(以下亦簡稱為光束Bga);及準直透鏡(透鏡系統)GLa,其使來自該光源之光束Bga成為平行光束。為高精度地穩定地檢測多面鏡PM之反射面RP(RPa)之角度變化,將投射至反射面RP(RPa)之光束Bga設為於反射面RP(RPa)之旋轉方向(與XY面平行之主掃描方向)上具有某種程度之寬度之平行光束。另一方面,就光束受光系統60b而言,較佳為使反射光束Bgb於光電轉換元件DTo上聚光成在主掃描方向上收縮得較小之點光SPr。為此,設置有焦點距離Fgs之透鏡系統GLb。由於反射光束Bgb成為平行光束,故而自多面鏡PM之反射面RP(RPa)至透鏡系統GLb為止之距離可相對自由地設定。光電轉換元件DTo之受光面配置於透鏡系統GLb之後側之焦點距離Fgs之位置。於在反射面RP(RPa)反射之反射光束Bgb與透鏡系統GLb之光軸同軸地入射時,將反射光束Bgb之點光SPr設定成位於光電轉換元件DTo之受光面之大致中央。 Fig. 4 is a simplified diagram showing the configuration of the
即便於相對於透鏡系統GLb之光軸朝主掃描方向略微傾斜之反射光束Bgb'入射之情形時,反射光束Bgb'亦成為點光SPr而聚光於與光電轉換元件DTo之受光面大致相同之面內。自透鏡系統GLb朝向光電轉換元件DTo之反射光束Bgb'無需為遠心,為進一步提高橫穿光電轉換元件DTo之受光面之點光SPr之速度,非遠心者反而較佳。如上所述,藉由將透鏡系統GLb之焦點距離Fgs與fθ透鏡系統FT之焦點距離fo設定為Fgs>fo,可提高自光電轉換元件DTo輸出之原點訊號SZn之產生時序之再現性(正確性)。關於原點訊號SZn之再現性之謀求方法或再現性之提高程度等將於下文進行敍述。 Even when the reflected light beam Bgb' which is slightly inclined toward the main scanning direction with respect to the optical axis of the lens system GLb is incident, the reflected light beam Bgb' becomes a point light SPr and is focused on the light receiving surface of the photoelectric conversion element DTo. In-plane. The reflected light beam Bgb′ from the lens system GLb toward the photoelectric conversion element DTo does not need to be telecentric. In order to further increase the speed of the spot light SPr that crosses the light receiving surface of the photoelectric conversion element DTo, it is better not to be telecentric. As described above, by setting the focal distance Fgs of the lens system GLb and the focal distance fo of the fθ lens system FT to Fgs>fo, the reproducibility of the generation timing of the origin signal SZn output from the photoelectric conversion element DTo can be improved (correct sex). The method for seeking the reproducibility of the origin signal SZn or the degree of improvement of the reproducibility will be described below.
圖5係表示光電轉換元件DTo之詳細構成,於本實施形態中,例如使用Hamamatsu Photonics股份有限公司製造之作為雷射光束同步檢測用光電IC銷售之S9684系列。該光電IC係如圖5般將於點光SPr之掃描方向上隔著狹窄之間隙(不感帶)而排列之2個PIN光電二極體之受光面PD1、PD2、電流放大部IC1、IC2、及比較器部IC3封裝成一體而得者。若點光SPr按照受光面PD1、PD2之順序橫穿,則電流放大部IC1、IC2之各者產生如圖5(A)所示般之輸出訊號STa、STb。對將來自最初接收點光SPr之受光面PD1之光電流放大的電流放大部IC1施加固定之偏移電壓(基準電壓)Vref,使電流放大部IC1之輸出訊號STa以於受光面PD1產生之光電流為零時成為基準電壓Vref之方式偏壓。如圖5(B)所示,比較器部IC3將輸出訊號STa、STb之位準加以比較,將STa>STb時成為H位準且STa<STb時成為L位準之邏輯訊號輸出作為原點訊號SZn。於本實施形態中,將原點訊號SZn自H位準轉變為L位準之時間點設為原點時刻(原點位置)Tog,所謂原點訊號SZn之產生時序係意指原點時刻Tog。再者,此處之原點位置(原點時刻Tog)例如並非意味著於將fθ透鏡系統FT之光軸AXf所通過之基板P上之點設為基準點時,作為以與該基準點於點光SP之主掃描方向始終隔開固定距離之方式設定之絕對位置的原點,而是相對地表示相對於沿著描繪線SLn之圖案描繪之開 始時序的既定距離前(或既定時間前)者。 FIG. 5 shows the detailed structure of the photoelectric conversion element DTo. In this embodiment, for example, the S9684 series manufactured by Hamamatsu Photonics Co., Ltd. and sold as a photoelectric IC for laser beam synchronization detection is used. This photo-IC is the light-receiving surface PD1, PD2, and current amplifying parts IC1, IC2 of two PIN photodiodes arranged in the scanning direction of the spot light SPr with a narrow gap (non-sensitive band) as shown in Figure 5. And the comparator IC3 is packaged as a whole. If the spot light SPr traverses the light receiving surfaces PD1 and PD2 in the order, each of the current amplifying parts IC1 and IC2 generates output signals STa and STb as shown in FIG. 5(A). A fixed offset voltage (reference voltage) Vref is applied to the current amplifying part IC1 that amplifies the photocurrent from the light-receiving surface PD1 that first receives the spot light SPr, so that the output signal STa of the current amplifying part IC1 is the light generated on the light-receiving surface PD1 When the current is zero, the bias voltage becomes the reference voltage Vref. As shown in Figure 5(B), the comparator IC3 compares the levels of the output signals STa and STb, and outputs the logic signal that becomes the H level when STa>STb and becomes L when STa<STb is the origin. Signal SZn. In this embodiment, the time point when the origin signal SZn changes from the H level to the L level is set as the origin time (origin position) Tog. The so-called origin signal SZn generation timing refers to the origin time Tog . In addition, the origin position (origin time Tog) here does not mean, for example, when the point on the substrate P through which the optical axis AXf of the fθ lens system FT passes is set as the reference point, the reference point is The main scanning direction of the spot light SP is always separated by a fixed distance from the origin of the absolute position, but it is relative to the predetermined distance (or before the predetermined time) relative to the start sequence of the pattern drawing along the drawing line SLn. By.
原點時刻Tog成為於輸出訊號STa之位準下降且輸出訊號STb之位準上升之中途,輸出訊號STa、STb之位準一致之瞬間。輸出訊號STa、STb之位準變化(上升或下降之波形)可根據受光面PD1、PD2之寬度尺寸與點光SPr之大小之關係、點光SPr之掃描速度Vh與受光面PD1、PD2之應答性等而變化,但只要點光SPr之直徑大於不感帶之寬度尺寸且小於受光面PD1之寬度尺寸,則輸出訊號STa、STb之各者成為如圖5(A)般之利用位準變化所得之波形,可獲得穩定之原點訊號SZn。 The origin time Tog becomes the moment when the levels of the output signals STa and STb coincide in the middle of the decrease of the level of the output signal STa and the increase of the level of the output signal STb. The level change of the output signal STa, STb (rising or falling waveform) can be based on the relationship between the width of the light receiving surface PD1, PD2 and the size of the spot light SPr, the scanning speed Vh of the spot light SPr and the response of the light receiving surface PD1, PD2 However, as long as the diameter of the spot light SPr is larger than the width of the non-sensitive zone and smaller than the width of the light-receiving surface PD1, each of the output signals STa and STb becomes the result of using level changes as shown in Figure 5(A) The waveform can obtain a stable origin signal SZn.
圖6係表示光束切換部之概略構成,該光束切換部包含用以將來自光源裝置LS之光束LB選擇性地分配至6個描繪單元U1~U6中之任一者之選擇用光學元件OSn(OS1~OS6)。圖6之各構件之符號雖與圖1所示之構件相同,適當省略圖1中所示之反射鏡M1~M12。由光纖放大雷射光源所構成之光源裝置LS連接於描繪控制裝置200,將各種控制資訊SJ進行交換。光源裝置LS於內部具備產生使光束LB脈衝發光時之振盪頻率Fa(例如400MHz)之時脈訊號CLK之時脈電路,根據自描繪控制裝置200送來之每個描繪單元Un之描繪資料SDn(將1像素設為1位元之點陣圖資料),使光束LBn響應於時脈訊號CLK而以突發脈衝模式(與既定之時脈脈衝數相應之發光及與既定之時脈脈衝數相應之發光停止之重複)進行脈衝發光。 Fig. 6 shows a schematic configuration of a light beam switching unit including a selection optical element OSn ( OS1~OS6). Although the symbols of the components in FIG. 6 are the same as the components shown in FIG. 1, the mirrors M1 to M12 shown in FIG. 1 are appropriately omitted. The light source device LS composed of a fiber-amplified laser light source is connected to the
描繪控制裝置200具備:多面鏡旋轉控制部,其輸入自描繪單元U1~U6之各者之原點感測器(光電轉換元件DTo)輸出之原點訊號SZn(SZ1~SZ6),以描繪單元U1~U6之各者之多面鏡PM之旋轉速度與旋轉角度相位成為指定之狀態之方式,控制多面鏡PM之旋轉馬達RM;及光束切換控制部,其根據原點訊號SZn(SZ1~SZ6)而控制作為供給至選擇用光學元件OSn(OS1~OS6)之各者之超音波訊號之驅動訊號DF1~DF6之接通/斷開(施加/非施加)。再者, 於圖6中,表示選擇6個選擇用光學元件OS1~OS6中之選擇用光學元件OS4,使來自光源裝置LS之光束LB(按照利用描繪單元U4所描繪之圖案之描繪資料進行強度調變)朝向入射鏡IM4偏向,作為光束LB4而供給至描繪單元U4之狀態。如此,若將選擇用光學元件OS1~OS6串聯地設置於光束LB之光路,則根據選擇用光學元件OSn之各者所具有之透過率或繞射效率,相應於自光源裝置LS之選擇用光學元件OSn之順序而選擇之光束LB1~LB6之強度(脈衝光之波峰強度)不同。因此,描繪控制裝置200係以入射至描繪單元U1~U6之各者之光束LB1~LB6之相對之強度差成為既定之容許範圍內(例如±5%以內)之方式,調整驅動訊號DF1~DF6之各者之位準(高頻訊號之振幅或電力)。 The
圖7係表示選擇用光學元件OSn(OS1~OS6)及入射鏡IMn(IM1~IM6)周圍之具體構成之圖。自光源裝置LS射出之光束LB例如作為直徑1mm以下之微小直徑(第1直徑)之平行光束而入射至選擇用光學元件OSn。於未輸入作為高頻訊號(超音波訊號)之驅動訊號DFn之期間(驅動訊號DFn為斷開),所入射之光束LB未藉由選擇用光學元件OSn進行繞射地直接透過。所透過之光束LB透過沿著光軸AXb設置於其光路上之聚光透鏡Ga及準直透鏡Gb,入射至後段之選擇用光學元件OSn。此時通過選擇用光學元件OSn後通過聚光透鏡Ga及準直透鏡Gb之光束LB係設為與光軸AXb同軸。聚光透鏡Ga將透過選擇用光學元件OSn之光束LB(平行光束)以於位於聚光透鏡Ga與準直透鏡Gb之間之面Ps之位置成為光束腰之方式聚光。準直透鏡Gb使自面Ps之位置發散之光束LB形成為平行光束。藉由準直透鏡Gb而形成為平行光束之光束LB之直徑成為第1直徑。聚光透鏡Ga之後側焦點位置與準直透鏡Gb之前側焦點位置於既定之容許範圍內與面Ps一致,聚光透鏡Ga之前側焦點位置係以與選擇用光學元件OSn內之繞射點於既定之容許範圍內一致之方式配置。 Fig. 7 is a diagram showing the specific configuration around the selection optical element OSn (OS1~OS6) and the incident mirror IMn (IM1~IM6). The light beam LB emitted from the light source device LS is incident on the selection optical element OSn as, for example, a parallel light beam with a small diameter (first diameter) of 1 mm or less in diameter. During the period when the driving signal DFn as a high-frequency signal (ultrasonic signal) is not input (the driving signal DFn is off), the incident light beam LB is directly transmitted without being diffracted by the selective optical element OSn. The transmitted light beam LB passes through the condenser lens Ga and the collimator lens Gb arranged on the optical path along the optical axis AXb, and enters the optical element OSn for selection in the subsequent stage. At this time, the light beam LB system passing through the condenser lens Ga and the collimating lens Gb after passing through the optical element OSn for selection is set to be coaxial with the optical axis AXb. The condensing lens Ga condenses the light beam LB (parallel beam) passing through the optical element OSn for selection so that the position of the surface Ps between the condensing lens Ga and the collimating lens Gb becomes the beam waist. The collimator lens Gb forms the light beam LB diverging from the position of the plane Ps into a parallel light beam. The diameter of the beam LB formed into a parallel beam by the collimator lens Gb becomes the first diameter. The focal position behind the condenser lens Ga and the front focal position of the collimator lens Gb are consistent with the plane Ps within a predetermined allowable range, and the front focal position of the condenser lens Ga is aligned with the diffraction point in the selection optical element OSn Configure in a consistent manner within the established allowable range.
另一方面,於對選擇用光學元件OSn施加作為高頻訊號之驅動訊 號DFn之期間,產生所入射之光束LB藉由選擇用光學元件OSn進行繞射後之光束LBn(1次繞射光)、及未繞射之0次光束LBnz。於將入射之光束LB之強度設為100%,且忽略由選擇用光學元件OSn之透過率所致之降低時,經繞射之光束LBn之強度最大為80%左右,剩餘20%左右成為0次光束LBnz之強度。0次光束LBnz通過聚光透鏡Ga及準直透鏡Gb,進而透過後段之選擇用光學元件OSn而被吸收體TR吸收。以與驅動訊號DFn之高頻之頻率相應之繞射角朝-Z方向偏向之光束LBn(平行光束)透過聚光透鏡Ga,並朝向設置於面Ps上之入射鏡IMn。聚光透鏡Ga之前側焦點位置與選擇用光學元件OSn內之繞射點為光學上共軛,故而自聚光透鏡Ga朝向入射鏡IMn之光束LBn係以於自光軸AXb偏心之位置與光軸AXb平行地行進,且於面Ps之位置成為光束腰之方式聚光(收斂)。該光束腰之位置係以與透過描繪單元Un投射至基板P上之點光SP成為光學上共軛之方式設定。 On the other hand, during the period when the drive signal DFn, which is a high-frequency signal, is applied to the selection optical element OSn, the incident light beam LB is generated after being diffracted by the selection optical element OSn (primary diffracted light), And the undiffracted 0-order beam LBnz. When the intensity of the incident light beam LB is set to 100%, and the decrease caused by the transmittance of the optical element OSn for selection is ignored, the intensity of the diffracted light beam LBn is about 80% at the maximum, and the remaining 20% becomes 0. The intensity of the secondary beam LBnz. The 0-order light beam LBnz passes through the condenser lens Ga and the collimator lens Gb, and then passes through the optical element OSn for selection in the latter stage, and is absorbed by the absorber TR. The beam LBn (parallel beam) deflected in the -Z direction at the diffraction angle corresponding to the high frequency frequency of the driving signal DFn passes through the condenser lens Ga and faces the incident mirror IMn provided on the surface Ps. The focal position on the front side of the condenser lens Ga and the diffraction point in the selection optical element OSn are optically conjugated. Therefore, the light beam LBn from the condenser lens Ga toward the incident mirror IMn is decentered from the optical axis AXb. The axis AXb travels in parallel, and the light is condensed (converged) in such a way that the position of the surface Ps becomes the beam waist. The position of the beam waist is set so as to be optically conjugate with the spot light SP projected on the substrate P through the drawing unit Un.
藉由將入射鏡IMn之反射面或其附近配置於面Ps之位置,利用選擇用光學元件OSn而繞射之光束LBn由入射鏡IMn朝-Z方向反射,且透過準直透鏡Gc而沿著光軸AX1(參照圖2)入射至描繪單元Un。準直透鏡Gc使藉由聚光透鏡Ga而收斂/發散之光束LBn形成為與準直透鏡Gc之光軸(AX1)同軸之平行光束。藉由準直透鏡Gc而形成為平行光束之光束LBn之直徑與第1直徑大致相同。聚光透鏡Ga之後側焦點與準直透鏡Gc之前側焦點係於既定之容許範圍內配置於入射鏡IMn之反射面或其附近。 By arranging the reflecting surface of the incident mirror IMn or its vicinity at the position of the plane Ps, the light beam LBn diffracted by the selective optical element OSn is reflected by the incident mirror IMn in the -Z direction, and passes through the collimating lens Gc along The optical axis AX1 (refer to FIG. 2) is incident on the drawing unit Un. The collimator lens Gc forms the light beam LBn converged/diverged by the condenser lens Ga into a parallel light beam coaxial with the optical axis (AX1) of the collimator lens Gc. The diameter of the beam LBn formed as a parallel beam by the collimator lens Gc is substantially the same as the first diameter. The back focus of the condenser lens Ga and the front focus of the collimator lens Gc are arranged on or near the reflecting surface of the incident mirror IMn within a predetermined allowable range.
如上所述,當使聚光透鏡Ga之前側焦點位置與選擇用光學元件OSn內之繞射點光學上共軛,且於聚光透鏡Ga之後側焦點位置即面Ps配置入射鏡IMn時,使選擇用光學元件OSn之驅動訊號DFn之頻率自規定頻率變化±△Fs,藉此,可使光束LBn之面Ps上之聚光點相對於光軸AXb之偏心量(移位量)變化。其結果,可使自描繪單元Un投射至基板P上之光束LBn之點光SP於副掃描方向上 移位±△SFp。該移位量(|△SFp|)雖受到選擇用光學元件OSn自身之偏向角之最大範圍、入射鏡IMn之反射面之大小、至描繪單元Un內之多面鏡PM為止之光學系統(中繼系統)之倍率、多面鏡PM之反射面RP之Z方向之寬度、自多面鏡PM至基板P為止之倍率(fθ透鏡系統FT之倍率)等之限制,但可於點光SP之基板P上之有效大小(直徑)程度、或於描繪資料上定義之像素尺寸(Pxy)程度之範圍內進行調整。藉此,可高精度且高速地修正利用描繪單元Un之各者描繪於基板P上之新圖案與已形成於基板P上之圖案之重疊誤差、或利用描繪單元Un之各者描繪於基板P上之新圖案間之接合誤差。 As described above, when the focal position on the front side of the condenser lens Ga is optically conjugated with the diffraction point in the selection optical element OSn, and the incident mirror IMn is arranged at the focal position on the rear side of the condenser lens Ga, that is, the plane Ps, The frequency of the driving signal DFn of the optical element OSn for selection is changed from the predetermined frequency by ±ΔFs, whereby the eccentric amount (shift amount) of the condensing point on the plane Ps of the light beam LBn with respect to the optical axis AXb can be changed. As a result, the spot light SP of the light beam LBn projected from the drawing unit Un onto the substrate P can be shifted by ±ΔSFp in the sub-scanning direction. This shift amount (|△SFp|) is subject to the maximum range of the deflection angle of the selection optical element OSn itself, the size of the reflecting surface of the incident mirror IMn, and the optical system (relay) up to the polygon mirror PM in the drawing unit Un System), the width of the reflective surface RP of the polygon mirror PM in the Z direction, the magnification from the polygon mirror PM to the substrate P (the magnification of the fθ lens system FT), etc., but it can be placed on the substrate P of the spot light SP The effective size (diameter) or the pixel size (Pxy) defined on the drawing data can be adjusted. Thereby, it is possible to correct the overlap error between the new pattern drawn on the substrate P by each of the drawing units Un and the pattern already formed on the substrate P with high accuracy and high speed, or drawing on the substrate P by each of the drawing units Un The joint error between the new patterns on the above.
其次,參照圖8、圖9,說明對來自以圖3、圖4之方式構成之原點感測器(光束送光系統60a及光束受光系統60b)之原點訊號SZn的產生時序之再現性(偏差誤差)進行測量及運算之方法。該測量或運算能夠利用圖6所示之描繪控制裝置200內之處理器(CPU(Central Processing Unit,中央處理單元))等實施,亦可將原點訊號SZn發送至外部之波形測量機器等而實施。圖8係圖3或圖4所示之8面之多面鏡PM之俯視圖,此處,關於8個反射面RP之各者求出如圖5(B)般產生之原點訊號SZn之再現性,故而可將8個反射面RP與多面鏡PM之旋轉方向(順時針方向)反向地設為RPa、RPb、RPc、RPd、RPe、RPf、RPg、RPh。又,於多面鏡PM之上表面(或下表面),形成有用以檢測多面鏡PM之旋轉之原點之旋轉基準標記Mcc。旋轉基準標記Mcc係藉由每當多面鏡PM旋轉1圈時便輸出脈衝狀之檢測訊號之反射型光電感測器(亦稱為轉動檢測感測器)而檢測出。於測量原點訊號SZn之再現性時,必須特定出原點感測器所檢測之多面鏡PM之反射面,故而以來自轉動檢測感測器之檢測訊號(旋轉基準標記Mcc)為基準,特定出多面鏡PM之各反射面RPa~RPh。 Next, referring to Figures 8 and 9, the reproducibility of the origin signal SZn generation timing from the origin sensor (
進而,於測量原點訊號SZn之產生時序之再現性時,必須考慮由多面鏡PM之速度變動(速度不均)所致之影響。多面鏡PM之速度變動亦可藉由 上述轉動檢測感測器而測量,但於本實施形態中,根據原點訊號SZn對多面鏡PM之速度變動進行測量。如上文所例示般,若設為以使多面鏡PM以36000rpm旋轉之方式,利用描繪控制裝置200內之多面鏡旋轉控制部進行伺服控制,則多面鏡PM會於1秒內旋轉600圈,設計上之旋轉1圈之轉動時間TD成為1/600秒(≒1666.667μS)。因此,使用較光源裝置LS用於脈衝發光之振盪頻率Fa高之頻率(例如2倍以上)之時脈脈衝等重複測量自原點訊號SZn中之任一個脈衝之原點時刻Tog進行計數至第9個脈衝之原點時刻Tog為止之實際之轉動時間TD。多面鏡PM伴有慣性地高速旋轉,故而旋轉1圈之過程中產生速度不均之可能性較低,根據伺服控制之特性等,有於數mS~數十mS之週期內設計上之轉動時間TD略微地變動之情況。 Furthermore, when measuring the reproducibility of the generation timing of the origin signal SZn, the influence caused by the speed variation (speed unevenness) of the polygon mirror PM must be considered. The speed variation of the polygon mirror PM can also be measured by the above-mentioned rotation detection sensor, but in this embodiment, the speed variation of the polygon mirror PM is measured based on the origin signal SZn. As exemplified above, if the polygon mirror PM is set to rotate at 36000 rpm and the polygon mirror rotation control part in the
圖9係說明測量原點訊號SZn之產生時序之再現性(偏差)之方法的圖。此處,為簡化說明,例示與圖8所示之多面鏡PM之反射面RPa對應地產生之原點訊號SZn之原點時刻Tog2之再現性的謀求方法,對於其他反射面RPb~RPh之各者亦可同樣地進行測量。於圖8之情形時,於原點時刻Tog2之前一個時序產生之原點時刻Tog1可作為與多面鏡PM之反射面RPh對應地產生之原點訊號SZn而獲得。因此,於使多面鏡PM以規定之速度旋轉之狀態下,多面鏡PM每旋轉1圈便多次(例如10次以上)重複測量自對應於反射面RPh而產生之原點時刻Tog1至對應於下一反射面RPa之原點時刻Tog2為止之原點間隔時間△Tmn(n=1、2、3…之轉動數)。於圖9中,為簡化說明,以將對應於反射面RPh而獲得之原點時刻Tog1於時間軸上對齊地排列之方式表示出於多面鏡PM旋轉7圈之期間產生之原點訊號SZn(a)1~SZn(a)7之各者之波形。 FIG. 9 is a diagram illustrating a method of measuring the reproducibility (deviation) of the generation timing of the origin signal SZn. Here, in order to simplify the description, an example of the method of seeking the reproducibility of the origin time Tog2 of the origin signal SZn generated corresponding to the reflecting surface RPa of the polygon mirror PM shown in FIG. 8 is shown for each of the other reflecting surfaces RPb~RPh The same can also be done for measurement. In the case of FIG. 8, the origin time Tog1 generated one time sequence before the origin time Tog2 can be obtained as the origin signal SZn generated corresponding to the reflecting surface RPh of the polygon mirror PM. Therefore, in the state that the polygon mirror PM is rotated at a predetermined speed, the polygon mirror PM repeats the measurement multiple times (for example, more than 10 times) every time the polygon mirror PM rotates one turn. The origin interval time △Tmn (the number of rotations of n=1, 2, 3...) to the origin time Tog2 of the next reflecting surface RPa. In FIG. 9, in order to simplify the description, the origin time Tog1 obtained corresponding to the reflecting surface RPh is aligned on the time axis to represent the origin signal SZn( a) The waveform of each of 1~SZn(a)7.
此處,若假定多面鏡PM之旋轉速度之變動為零,則原本理應為固定之原點間隔時間△Tmn之各者之測量值產生偏差。該偏差成為與反射面RPa對應之原點時刻Tog2之產生時序之偏差量△Te,原點訊號SZn之再現性係設為分 佈於偏差量△Te內之複數個原點時刻Tog2之標準偏差值σ、或標準偏差值σ之3倍之3σ值而求出。如上文所作說明般,於光源裝置LS使光束LB以週期Tf進行脈衝振盪之情形時,作為再現性之3σ值宜較週期Tf小。於以上之說明中,雖將多面鏡PM之旋轉速度之變動(速度不均)假定為零,但若使用以毫微秒以下之解析度對訊號波形進行取樣之波形測定器來分析原點訊號SZn之波形,並嘗試測量多面鏡PM之轉動時間(旋轉1圈之時間),則判斷因轉動而導致轉動時間變動±數nS左右。因此,必須將以圖9之方式進行測量之原點間隔時間△Tmn(n=1、2、3…之轉動數)相應於因於該原點間隔時間△Tmn之測量期間內之多面鏡PM之速度變動而產生之誤差量進行修正。 Here, if it is assumed that the variation of the rotation speed of the polygon mirror PM is zero, the measured value of each of the original interval time ΔTmn, which should have been fixed, will deviate. This deviation becomes the deviation amount △Te of the generation sequence of the origin time Tog2 corresponding to the reflecting surface RPa, and the reproducibility of the origin signal SZn is set as the standard deviation value of the plural origin time Tog2 distributed within the deviation amount △Te σ, or a 3σ value that is three times the standard deviation value σ. As explained above, when the light source device LS pulses the light beam LB with the period Tf, the 3σ value as the reproducibility is preferably smaller than the period Tf. In the above description, although the rotation speed variation (speed unevenness) of the polygon mirror PM is assumed to be zero, if a waveform tester that samples the signal waveform with a resolution of less than nanoseconds is used to analyze the origin signal SZn waveform, and try to measure the rotation time of the polygon mirror PM (the time of one rotation), and it is judged that the rotation time changes due to the rotation by ± a few nS. Therefore, the origin interval time ΔTmn (the number of rotations for n=1, 2, 3...) measured in the manner shown in Fig. 9 must correspond to the polygon mirror PM during the measurement period due to the origin interval time ΔTmn The amount of error caused by the speed change is corrected.
圖10係示意性地表示預測由多面鏡PM之速度變動所致之時間誤差量之方法的圖。於本實施形態中,針對多面鏡PM之多次轉動之每一次,測量對應於8個反射面RPa~RPh之各者之原點間隔時間△Tmn。於圖10中,示意性地表示將多面鏡PM轉1圈中之初始位置(最初之原點時刻Tog)設為反射面RPa,自反射面RPa起多面鏡PM旋轉2圈之期間內產生之原點訊號SZn之波形。此處,將自對應於原點訊號SZn之反射面RPa而產生之原點時刻Tog至對應於相鄰之反射面RPb而產生之原點時刻Tog為止的原點間隔時間設為△Tma,以下同樣地,將自相鄰之反射面RPb至反射面RPc為止之原點間隔時間設為△Tmb、將自相鄰之反射面RPh至反射面RPa為止之原點間隔時間設為△Tmh。於多面鏡PM之第1週中,將對應於8個反射面RPa~RPh之各者而產生之各個原點時刻Tog設為起始點,測量多面鏡PM之反射面RPa~RPh之各者之轉動時間TDa、TDb、……TDh。轉動時間TDa~TDh之各者亦可利用與8個反射面RPa~RPh之各者對應之8個原點間隔時間△Tma~△Tmh之合計值而求出。轉動時間TDa~TDh(或原點間隔時間△Tma~△Tmh)之各者係於多面鏡PM例如旋轉N圈之期間重複測量。藉此,自與8個反射面RPa~RPh之各者相應之原點時刻Tog計時的轉動時間TDa~TDh 之各者之資料可持續N圈而獲得。 FIG. 10 is a diagram schematically showing a method of predicting the amount of time error caused by the speed variation of the polygon mirror PM. In this embodiment, for each of the multiple rotations of the polygon mirror PM, the origin interval time ΔTmn corresponding to each of the eight reflecting surfaces RPa~RPh is measured. In Fig. 10, it is schematically shown that the initial position (initial origin time Tog) of the polygon mirror PM in one revolution is set as the reflective surface RPa, and it is generated during the period of 2 revolutions of the polygon mirror PM from the reflective surface RPa. The waveform of the origin signal SZn. Here, the origin time interval from the origin time Tog generated by the reflection surface RPa corresponding to the origin signal SZn to the origin time Tog generated corresponding to the adjacent reflection surface RPb is set as △Tma, the following Similarly, let the origin interval time from the adjacent reflecting surface RPb to the reflecting surface RPc be ΔTmb, and let the origin interval time from the adjacent reflecting surface RPh to the reflecting surface RPa be ΔTmh. In the first week of the polygon mirror PM, set each origin time Tog corresponding to each of the 8 reflecting surfaces RPa~RPh as the starting point, and measure each of the reflecting surfaces RPa~RPh of the polygon mirror PM The rotation time TDa, TDb,...TDh. Each of the rotation time TDa~TDh can also be obtained by the total value of the 8 origin interval time △Tma~△Tmh corresponding to each of the 8 reflecting surfaces RPa~RPh. Each of the rotation time TDa ~ TDh (or the origin interval time △Tma ~ △Tmh) is repeatedly measured during the period when the polygon mirror PM rotates, for example, N revolutions. Thereby, the data of each of the rotation time TDa~TDh counted from the origin time Tog corresponding to each of the 8 reflecting surfaces RPa~RPh can be obtained continuously for N revolutions.
其次,對持續N圈所獲得之轉動時間TDa~TDh之各者之平均轉動時間ave(TDa)~ave(TDh)進行計算。例如,轉動時間TDa係對應於轉動數N(N=1、2、3…)而記憶為TDa(1)、TDa(2)、TDa(3)、…TDa(N),故而平均轉動時間ave(TDa)可利用[TDa(1)+TDa(2)+TDa(3)+、…+TDa(N)]/N求出。 Secondly, calculate the average rotation time ave(TDa)~ave(TDh) of each of the rotation times TDa~TDh obtained for N cycles. For example, the rotation time TDa corresponds to the number of rotations N (N=1, 2, 3...) and is memorized as TDa(1), TDa(2), TDa(3),...TDa(N), so the average rotation time ave (TDa) can be calculated using [TDa(1)+TDa(2)+TDa(3)+,...+TDa(N)]/N.
其次,假設圖10所示之第2圈之後所測量之原點間隔時間△Tma~△Tmh之各者包含由之前之多面鏡PM之轉動的速度變動之影響所造成之誤差,例如,關於第2圈之後實測之原點間隔時間△Tma,預測僅以此前之轉動中所實測之轉動時間TDa與平均轉動時間ave(TDa)之比率變動,而計算原點間隔時間△Tma之預測間隔時間△Tma'。此時,求出於第2圈之後之各轉動中所實測之N-1個原點間隔時間△Tma之平均間隔時間ave(△Tma)。繼而,對平均轉動時間ave(TDa)與經實測之轉動時間TDa之比乘以平均間隔時間ave(△Tma),算出修正速度變動量後之預測間隔時間△Tma'。藉此,經實測之原點間隔時間△Tma與預測間隔時間△Tma'之差值係設為對應於反射面RPa而產生之原點時刻Tog之更準確之偏差量(σ值)而求出。與其他反射面RPb~RPh之各者對應之原點訊號SZn之原點時刻Tog的偏差量亦藉由相同之計算而求出。如此,僅藉由於多面鏡PM之多次旋轉中重複實測原點訊號SZn之原點時刻Tog之產生間隔即原點間隔時間△Tma~△Tmh之各者,便可求出使由多面鏡PM之速度變動引起之誤差減少的準確之再現性(3σ值等)。 Secondly, suppose that each of the origin interval time △Tma~△Tmh measured after the second circle shown in Fig. 10 includes the error caused by the influence of the speed change of the previous polygon mirror PM. For example, regarding the first The measured interval time between the origins △Tma after 2 laps, the prediction is only based on the ratio of the measured rotation time TDa and the average rotation time ave(TDa) in the previous rotation, and the predicted interval time △Tma of the initial interval time △Tma is calculated. Tma'. At this time, find the average interval time ave (ΔTma) of the N-1 origin interval time ΔTma measured in each rotation after the second turn. Then, the ratio of the average rotation time ave (TDa) to the measured rotation time TDa is multiplied by the average interval time ave (ΔTma) to calculate the predicted interval time ΔTma' after the amount of speed variation is corrected. By this, the difference between the measured origin interval time ΔTma and the predicted interval time ΔTma' is set to correspond to the more accurate deviation (σ value) of the origin time Tog generated by the reflecting surface RPa. . The deviation amount of the origin time Tog of the origin signal SZn corresponding to each of the other reflecting surfaces RPb~RPh is also calculated by the same calculation. In this way, only by repeating the generation interval of the origin time Tog of the actual measured origin signal SZn during the multiple rotations of the polygon mirror PM, that is, the origin interval time △Tma~△Tmh, the use of the polygon mirror PM can be obtained. Accurate reproducibility (3σ value, etc.) of the error reduction caused by the speed change.
[實測例] [Measured example]
作為一例,將原點感測器之光束受光系統60b內之透鏡系統GLb之焦點距離Fgs設為與fθ透鏡系統FT之焦點距離fo(例如100mm)相同程度,將光電轉換元件DTo配置於透鏡系統GLb之焦點距離Fgs之位置,使多面鏡PM以約38000rpm 旋轉,並利用如圖9之方法實測與多面鏡PM之反射面RPa~RPh之各者對應地產生之原點訊號SZn(原點時刻Tog2)之再現性後,可獲得如圖11所示之結果。於圖11中,橫軸表示所測量之反射面間之各位置(RPa→RPb、RPb→RPc、…RPh→RPa),縱軸表示對轉動速度之變動進行修正計算之後之各反射面間之間隔時間△Tma~△Tmh(μS)。於本實施形態中,間隔時間△Tma~△Tmh係利用具有2.5GHz(0.4nS)之取樣頻率之數位波形記憶裝置記憶經過多面鏡PM轉10圈中連續地產生之原點訊號SZn之波形資料,並對該波形資料進行分析而實測出。 As an example, the focal distance Fgs of the lens system GLb in the
如圖11般,將轉動速度之變動修正之後之間隔時間△Tma~△Tmh於197.380μS~197.355μS之間產生偏差。於多面鏡PM以38000rpm之旋轉速度精密地旋轉之情形時,計算上之間隔時間△Tma~△Tmh之各者為197.368μS。此種間隔時間△Tma~△Tmh之偏差例如因多面鏡PM之各反射面RPa~RPh中之相鄰之反射面彼此所成的8個頂角之各者未精密地成為135度、或自旋轉軸AXp至反射面RPa~RPh之各者為止之距離未精密地成為固定等加工上之形狀誤差而產生。又,間隔時間△Tma~△Tmh之偏差亦會根據多面鏡PM相對於旋轉軸AXp之偏心誤差之程度而產生。於圖11中,根據間隔時間△Tma~△Tmh之各者之偏差之分佈所計算出之3σ值成為2.3nS~5.9nS。該值意味著於將來自光源裝置LS之光束LB之脈衝振盪頻率設為400MHz(週期2.5nS)時,關於點光之掃描位置產生大致3脈衝以上之誤差。如上文所例示般,於將點光SP之直徑Φ設為4μm,將1像素大小Pxy於基板P上設為4μm見方,以點光SP之2脈衝量描繪1像素量之情形時,若3σ值為6nS左右,則意味著沿著描繪線SLn描繪之圖案之位置於主掃描方向上產生5μm左右(準確而言為4.8μm)之偏差。 As shown in Figure 11, the interval time △Tma~△Tmh after the change of the rotation speed is corrected has a deviation between 197.380μS~197.355μS. When the polygon mirror PM rotates precisely at a rotation speed of 38000 rpm, the calculated interval time △Tma~△Tmh is 197.368μS. The deviation of this interval time △Tma~△Tmh, for example, is due to the fact that each of the 8 vertex angles formed by the adjacent reflective surfaces of the polygonal mirror PM's reflective surfaces RPa~RPh does not accurately become 135 degrees, or self The distance from the rotation axis AXp to each of the reflecting surfaces RPa~RPh does not accurately become a shape error in processing such as a fixation. In addition, the deviation of the interval time △Tma~△Tmh will also be generated according to the degree of the eccentricity error of the polygon mirror PM with respect to the rotation axis AXp. In Fig. 11, the 3σ value calculated based on the distribution of the deviation of each of the interval time △Tma~△Tmh becomes 2.3nS~5.9nS. This value means that when the pulse oscillation frequency of the light beam LB from the light source device LS is set to 400 MHz (period: 2.5 nS), an error of approximately 3 pulses or more occurs with respect to the scanning position of the spot light. As exemplified above, when the diameter Φ of the spot light SP is set to 4 μm, the size of 1 pixel Pxy is set to 4 μm square on the substrate P, and the amount of 1 pixel is drawn with 2 pulses of the spot light SP, if 3σ The value is about 6nS, which means that the position of the pattern drawn along the drawing line SLn has a deviation of about 5 μm (to be precise, 4.8 μm) in the main scanning direction.
於將fθ透鏡系統FT之焦點距離設為fo,將基板P上之點光SP之脈衝間隔之距離(光點直徑之1/2)設為△Yp時,對應於脈衝間隔距離△Yp之多面鏡PM(反射面)之角度變化△θp成為△θp≒△Yp/fo。另一方面,若將與角度變化△θp 對應之光電轉換元件DTo上之雷射光束Bgb(點光SPr)的移動距離設為△Yg,則根據光束受光部(光束受光系統)60b側之透鏡系統GLb之焦點距離Fgs,移動距離△Yg成為△Yg≒△θp×Fgs。原點訊號SZn之原點時刻Tog之產生精度較理想為對應於點光SP之脈衝間隔距離△Yp之1/2以下之精度(解析度),故而使光電轉換元件DTo上之雷射光束Bgb(點光SPr)之掃描速度變快為基板P上之點光SP之掃描速度之2倍左右。即,宜設為△Yg≒2.△Yp之關係。為此,於本實施形態中,將透鏡系統GLb之焦點距離Fgs設定為fθ透鏡系統FT之焦點距離fo之2倍左右,當然亦可為2倍以上。 When the focal distance of the fθ lens system FT is set to fo, and the pulse interval distance of the spot light SP on the substrate P (1/2 of the spot diameter) is set to △Yp, it corresponds to the multi-faceted pulse interval distance △Yp The angle change Δθp of the mirror PM (reflecting surface) becomes Δθp≒ΔYp/fo. On the other hand, if the moving distance of the laser beam Bgb (spot light SPr) on the photoelectric conversion element DTo corresponding to the angle change △θp is set to △Yg, it is determined by the lens on the side of the beam receiving unit (beam receiving system) 60b The focal distance of the system GLb is Fgs, and the moving distance △Yg becomes △Yg≒△θp×Fgs. The generation accuracy of the origin time Tog of the origin signal SZn is ideally corresponding to the accuracy (resolution) less than 1/2 of the pulse spacing distance △Yp of the spot light SP, so the laser beam Bgb on the photoelectric conversion element DTo The scanning speed of the (spot light SPr) becomes about twice as fast as the scanning speed of the spot light SP on the substrate P. That is, it should be set as △Yg≒2. The relationship between △Yp. For this reason, in the present embodiment, the focal distance Fgs of the lens system GLb is set to approximately twice the focal distance fo of the fθ lens system FT, and of course it may be 2 times or more.
圖12係表示使用與於圖11中所實測之描繪單元Un相同構成之另一描繪單元,將透鏡系統GLb之焦點距離Fgs變化為Fgs≒2×fo,以與圖11相同之方式實測再現性而得之結果。圖12之縱軸與橫軸表示與圖11相同,但圖12之縱軸之刻度尺之1刻度成為2nS(圖11中為5nS)。藉由使點光SPr於光電轉換元件DTo上之掃描速度為點光SP於基板P上之掃描速度的2倍左右,根據間隔時間△Tma~△Tmh之各者之偏差之分佈而計算之3σ值成為1.3nS~2.5nS,與圖11之情形相比改善為大致一半。因此,於此情形時,若將點光SP之直徑Φ設為4μm,將1像素大小Pxy於基板P上設為4μm見方,以點光SP之2脈衝量描繪1像素量,則沿著描繪線SLn所描繪之圖案之主掃描方向之位置之偏差減半為2.5μm左右。 Fig. 12 shows another drawing unit with the same configuration as the drawing unit Un measured in Fig. 11, changing the focal distance Fgs of the lens system GLb to Fgs≒2×fo, and measuring the reproducibility in the same way as in Fig. 11 And got the result. The vertical axis and the horizontal axis of FIG. 12 are the same as those of FIG. 11, but 1 scale of the scale of the vertical axis of FIG. 12 is 2nS (5nS in FIG. 11). By making the scanning speed of the spot light SPr on the photoelectric conversion element DTo be about twice the scanning speed of the spot light SP on the substrate P, 3σ calculated based on the distribution of the deviation of each of the interval time △Tma~△Tmh The value becomes 1.3nS~2.5nS, which is about half the improvement compared with the case of Fig. 11. Therefore, in this case, if the diameter Φ of the spot light SP is set to 4 μm, the size of 1 pixel Pxy is set to a 4 μm square on the substrate P, and 1 pixel is drawn with 2 pulses of the spot light SP, then the drawing is drawn along The deviation of the position in the main scanning direction of the pattern drawn by the line SLn is halved to about 2.5 μm.
如上所述,將投射至多面鏡PM之反射面RPa~RPh之原點感測器用之光束Bga設為如相對於反射面RPa~RPh之旋轉方向之尺寸成為既定之粗度(例如直徑為1~2mm)以上之平行光束,藉此,可減少由反射面RPa~RPh之各者之表面之粗糙度(研磨痕跡等)所造成之影響,而可精密地檢測平均之表面之角度變化。另一方面,聚光於光電轉換元件DTo上之反射光束Bgb之點光SPr之直徑尺寸係根據光束掃描方向之受光面PD1、PD2之寬度尺寸、及受光面PD1與PD2之間之不感帶之寬度而適當地設定。為獲得如圖5[A]般之訊號波形,點光 SPr之掃描方向之直徑尺寸被設定為如較受光面PD1、PD2中之較小之寬度尺寸小且較不感帶之寬度大之條件。因此,使反射光束Bgb入射之透鏡系統GLb之焦點距離Fgs係以滿足此種條件之方式,被設定為較fθ透鏡系統FT之焦點距離fo長。 As described above, the beam Bga for the origin sensor projected on the reflecting surface RPa~RPh of the polygon mirror PM is set such that the dimension relative to the rotation direction of the reflecting surface RPa~RPh becomes a predetermined thickness (for example, the diameter is 1 ~2mm) or more parallel beams, thereby reducing the influence caused by the surface roughness (grinding marks, etc.) of each of the reflective surfaces RPa~RPh, and can accurately detect the average surface angle change. On the other hand, the diameter of the spot light SPr of the reflected beam Bgb condensed on the photoelectric conversion element DTo is based on the width of the light-receiving surfaces PD1 and PD2 in the scanning direction of the light beam, and the insensitive zone between the light-receiving surfaces PD1 and PD2. Set the width appropriately. In order to obtain the signal waveform as shown in Fig. 5[A], the diameter size of the spot light SPr in the scanning direction is set to be smaller than the smaller width size of the light receiving surfaces PD1, PD2 and larger than the width of the non-sensing zone. Therefore, the focal distance Fgs of the lens system GLb into which the reflected light beam Bgb is incident is set to be longer than the focal distance fo of the fθ lens system FT in a manner that satisfies this condition.
再者,自圖4所示之半導體雷射光源LDo放射之光束Bga之剖面內的強度分佈成為縱橫比為1:2左右之橢圓形,故而宜使橢圓形之長軸方向與多面鏡PM之各反射面RPa~RPh之旋轉方向(主掃描方向)一致,且使橢圓形之短軸方向與多面鏡PM之旋轉軸AXp之方向一致。如此一來,即便多面鏡PM之各反射面RPa~RPh之高度(旋轉軸AXp之方向之尺寸)較小,亦可將光束Bga有效地發射為反射光束Bgb,並且可使到達光電轉換元件DTo之反射光束Bgb之掃描方向之開口數(NA)大於非掃描方向之開口數(NA),故而可提高點光SPr之掃描方向(圖5之橫穿受光面PD1、PD2之方向)上之解析,並使對比度變得銳利。 Furthermore, the intensity distribution in the cross-section of the beam Bga radiated from the semiconductor laser light source LDo shown in FIG. 4 is an ellipse with an aspect ratio of about 1:2. Therefore, it is preferable to make the long axis direction of the ellipse and the polygon mirror PM The rotation direction (main scanning direction) of each reflecting surface RPa~RPh is the same, and the minor axis direction of the ellipse is consistent with the direction of the rotation axis AXp of the polygon mirror PM. In this way, even if the height of each reflecting surface RPa~RPh of the polygon mirror PM (the size in the direction of the rotation axis AXp) is small, the light beam Bga can be effectively emitted as the reflected light beam Bgb, and can reach the photoelectric conversion element DTo The number of openings (NA) in the scanning direction of the reflected light beam Bgb is greater than the number of openings (NA) in the non-scanning direction, so the analysis in the scanning direction of the spot light SPr (the direction across the light-receiving surface PD1 and PD2 in Figure 5) can be improved , And make the contrast sharper.
又,作為光電轉換元件DTo,亦可代替如圖5般將來自2個受光面PD1、PD2之輸出訊號STa、STb之大小加以比較而產生原點訊號SZn之類型,使用將來自1個狹縫狀之受光面之訊號位準與基準電壓加以比較而產生原點訊號SZn之類型。於該類型之情形時,原點訊號SZn之原點時刻Tog之再現性有訊號波形之上升部或下降部之傾斜越陡峭(響應時間越短)則越良好之可能性,故而宜使橫穿狹縫狀之受光面之點光SPr之掃描速度較描繪用之點光SP之掃描速度快,並且藉由透鏡系統GLb使點光SPr儘可能小地聚光而提高每單位面積之強度。 In addition, as the photoelectric conversion element DTo, it can be used instead of comparing the magnitudes of the output signals STa and STb from the two light-receiving surfaces PD1 and PD2 to generate the origin signal SZn as shown in Figure 5. The signal level of the light-receiving surface of the shape is compared with the reference voltage to generate the type of origin signal SZn. In this type of situation, the reproducibility of the origin time Tog of the origin signal SZn has the possibility that the steeper the slope of the rising or falling part of the signal waveform (the shorter the response time), the better, so it is better to make the cross The scanning speed of the point light SPr of the slit-shaped light-receiving surface is faster than the scanning speed of the point light SP for drawing, and the point light SPr is condensed as small as possible by the lens system GLb to increase the intensity per unit area.
再者,圖3所示之本實施形態之原點檢測感測器(透鏡系統GLb、光電轉換元件DTo)係對自與描繪用(加工用)光束LBn不同之光源投射之原點檢測用光束Bga的多面鏡PM上之反射光束Bgb進行光電檢測。然而,於圖3之配置關係中,於多面鏡PM之反射面RPa剛成為RPa'之角度位置之後,描繪用光束LBn為未入射至fθ透鏡系統FT之狀態(空白期間),但存在可入射至透鏡系統GLb之期間。於該空白期間之間,藉由來自光源裝置LS之光束LB之脈衝振盪或選擇 用光學元件OSn之控制,以不入射至描繪單元Un之方式控制描繪用光束LBn。因此,即便為空白期間,亦可僅於描繪用光束LBn可入射至透鏡系統GLb之期間,使選擇用光學元件OSn成為接通狀態並自光源裝置LS以振盪頻率Fa使光束LB脈衝振盪,利用光電轉換元件DTo接收於多面鏡PM反射之光束LBn之反射光束。於此種構成之情形時,於空白期間中入射至透鏡系統GLb之描繪用光束LBn可用作為原點檢測用光束。 In addition, the origin detection sensor (lens system GLb, photoelectric conversion element DTo) of the present embodiment shown in FIG. 3 is a light beam for origin detection projected from a light source different from the drawing (processing) light beam LBn The reflected beam Bgb on the Bga polygon mirror PM is photoelectrically detected. However, in the arrangement relationship of FIG. 3, just after the reflecting surface RPa of the polygon mirror PM reaches the angular position of RPa', the drawing light beam LBn is not incident on the fθ lens system FT (blank period), but it can be incident The period to the lens system GLb. During the blank period, the light beam LBn for drawing is controlled so as not to enter the drawing unit Un by pulse oscillation of the light beam LB from the light source device LS or the control of the optical element OSn for selection. Therefore, even in the blank period, only during the period when the drawing light beam LBn can be incident on the lens system GLb, the optical element OSn for selection is turned on and the light beam LB is pulse-oscillated at the oscillation frequency Fa from the light source device LS. The photoelectric conversion element DTo receives the reflected light beam of the light beam LBn reflected by the polygon mirror PM. In the case of such a configuration, the drawing light beam LBn incident on the lens system GLb during the blank period can be used as the origin detection light beam.
此外,圖12所示之間隔時間△Tma~△Tmh之偏差之傾向與上文之圖11所示之間隔時間△Tma~△Tmh之偏差之傾向若以奈秒級來看則差別較大,假設其原因在於:圖11與圖12之各者之再現性之實測中所使用之多面鏡PM間各頂角之角度誤差之傾向不同的個體差異(加工公差)或旋轉時之偏心誤差不同。如圖11或圖12之實測例般,多面鏡PM之加工公差或偏心誤差之傾向或程度有可能針對每個描繪單元Un(U1~U6)有所不同,間隔時間△Tma~△Tmh之偏差誤差亦針對每個描繪單元Un(U1~U6)有所不同。因此,於本實施形態中,為減少由多面鏡PM之加工公差或偏心誤差、或因由溫度變化所致之多面鏡PM之形狀變形等而產生之間隔時間△Tma~△Tmh之偏差誤差所帶來之影響,針對多面鏡PM之反射面RPa~RPh之各者調整自原點訊號SZn之原點時刻Tog至描繪開始時間點為止所設定之延遲時間TD。換言之,藉由訊號處理對針對多面鏡PM之反射面RPa~RPh之各者所產生之原點訊號SZn之原點時刻Tog的間隔時間△Tma~△Tmh進行修正,以使其等於多面鏡PM轉1圈之時間內大致相等。 In addition, the tendency of the deviation of the interval time △Tma~△Tmh shown in Fig. 12 and the tendency of the deviation of the interval time △Tma~△Tmh shown in Fig. 11 above are quite different if viewed on the order of nanoseconds. It is assumed that the reason lies in the fact that the angle error tendency of each vertex angle between the polygon mirror PM used in the actual measurement of the reproducibility of each of Fig. 11 and Fig. 12 is different. Like the actual measurement example shown in Figure 11 or Figure 12, the processing tolerance or eccentricity error tendency or degree of the polygon mirror PM may be different for each drawing unit Un (U1~U6), and the deviation of the interval time △Tma~△Tmh The error is also different for each drawing unit Un (U1~U6). Therefore, in this embodiment, in order to reduce the deviation error of the interval time △Tma~△Tmh caused by the processing tolerance or eccentricity error of the polygon mirror PM, or the shape deformation of the polygon mirror PM caused by temperature changes, etc. As a result, the delay time TD set from the origin time Tog of the origin signal SZn to the drawing start time point is adjusted for each of the reflecting surfaces RPa~RPh of the polygon mirror PM. In other words, the interval time △Tma~△Tmh of the origin time Tog of the origin signal SZn generated for each of the reflecting surfaces RPa~RPh of the polygon mirror PM is corrected by signal processing to make it equal to the polygon mirror PM The time for one revolution is roughly equal.
圖13係表示使平均每1像素2脈衝量之點光SP以光點大小Φ之1/2於主掃描方向與副掃描方向上重疊而於主掃描方向上描繪5像素量之連續圖案之狀態的圖。於圖13中,將針對多面鏡PM之反射面RPa~RPh之各者所產生之原點訊號SZn之原點時刻Tog設為起點,於固定之延遲時間TD後開始5像素量之圖案之描繪。又,圖13之原點訊號SZn之產生時序(原點時刻Tog)之偏差(間隔 時間△Tma~△Tmh之偏差)之傾向係作為一例而於圖12之情形時表示出。於如圖13般,以藉由利用多面鏡PM之反射面RPa掃描之光束LBn的點光SP所描繪之5像素之圖案為基準時,藉由利用多面鏡PM之其他反射面RPb~RPh之各者進行掃描之光束LBn的點光SP所描繪之5像素之圖案於主掃描方向上產生偏差。因此,所描繪之圖案之朝副掃描方向延伸之邊緣以像素為單位(1~2像素之量)蜿蜒。蜿蜒之像素數不論應描繪之圖案之線寬(主掃描方向之像素數)如何,均與間隔時間△Tma~△Tmh之偏差相應。因此,於將1像素之大小於基板P上設為4μm見方之情形時,若於副掃描方向上連續地描繪最小線寬8μm之圖案(2像素之量),則所曝光之線狀之圖案作為以線寬程度大幅度地蜿蜒之圖案被觀察到。 Fig. 13 shows a state in which a spot light SP with an average of 2 pulses per pixel is overlapped in the main scanning direction and the sub-scanning direction with 1/2 of the spot size Φ, and a continuous pattern of 5 pixels is drawn in the main scanning direction. Figure. In Fig. 13, the origin time Tog of the origin signal SZn generated for each of the reflecting surfaces RPa~RPh of the polygon mirror PM is set as the starting point, and the pattern drawing of 5 pixels starts after a fixed delay time TD . In addition, the tendency of the deviation (the deviation of the interval time ΔTma ~ ΔTmh) in the generation timing (origin time Tog) of the origin signal SZn in FIG. 13 is shown in the case of FIG. 12 as an example. As shown in FIG. 13, when the pattern of 5 pixels drawn by the spot light SP of the beam LBn scanned by the reflecting surface RPa of the polygon mirror PM is used as a reference, by using the other reflecting surfaces RPb~RPh of the polygon mirror PM The pattern of 5 pixels drawn by the spot light SP of the light beam LBn for each scanning has a deviation in the main scanning direction. Therefore, the edges of the depicted pattern that extend in the sub-scanning direction meander in pixel units (amount of 1 to 2 pixels). Regardless of the line width of the pattern to be drawn (the number of pixels in the main scanning direction), the number of meandering pixels corresponds to the deviation of the interval time △Tma~△Tmh. Therefore, when the size of 1 pixel is 4μm square on the substrate P, if a pattern with a minimum line width of 8μm (amount of 2 pixels) is drawn continuously in the sub-scanning direction, the exposed linear pattern It has been observed as a pattern that greatly meanders with the line width.
圖14係示意性地表示圖12之實測例之特性之曲線圖而得的曲線圖,橫軸之RPa/b~RPh/a分別表示圖12之橫軸之反射面間之各位置(RPa→RPb、RPb→RPc、…RPh→RPa),縱軸表示與圖12相同之原點間隔時間△Tma~△Tmh(μS)。圖14中之基準時間Tsr係8面之多面鏡PM以38000rpm之旋轉速度精密地旋轉時,旋轉45°所需之時間,成為197.368μS。進而,圖14之時間Tab、Tbc、Tcd、Tde、Tef、Tfg、Tgh、Tha係成為圖12所示之標準偏差之3倍之3σ值的中心之間隔時間。實測時之多面鏡PM之旋轉速度亦存在誤差,故而宜將間隔時間Tab、Tbc、Tcd、Tde、Tef、Tfg、Tgh、Tha之合計值除以8所得之平均值設為實際之基準時間Tsr'。 Fig. 14 is a graph obtained by schematically showing the characteristic graph of the actual measurement example in Fig. 12, and RPa/b~RPh/a on the horizontal axis respectively represent the positions between the reflecting surfaces of the horizontal axis in Fig. 12 (RPa→ RPb, RPb→RPc,...RPh→RPa), the vertical axis represents the same origin interval time △Tma~△Tmh(μS) as in Figure 12. The reference time Tsr in FIG. 14 is the time required for the rotation of 45° when the 8-sided polygon mirror PM is precisely rotated at a rotation speed of 38000 rpm, which becomes 197.368 μS. Furthermore, the times Tab, Tbc, Tcd, Tde, Tef, Tfg, Tgh, and Tha in FIG. 14 are the intervals of the center of the 3σ value that is three times the standard deviation shown in FIG. 12. There is also an error in the rotation speed of the polygon mirror PM during the actual measurement, so it is advisable to divide the total value of the interval time Tab, Tbc, Tcd, Tde, Tef, Tfg, Tgh, Tha by 8 and set the average value as the actual reference time Tsr '.
因此,於本實施形態中,將以如圖14般之特性輸出之原點訊號SZn之原點間隔時間△Tma~△Tmh之各者以與基準時間Tsr'一致之方式藉由延遲電路進行修正。圖15係說明將原點訊號SZn進行修正而得之原點訊號SZn'之產生之狀態的時序圖。於圖15中,代表性地表示原點訊號SZn中之對應於多面鏡PM之反射面RPa而產生之原點時刻Tog至對應於下一反射面RPb而產生之原點時刻Tog為止之期間之修正的狀態,但對其他反射面RPb~RPh亦同樣地進行修正。 與原點訊號SZn之反射面RPa、RPb之各者對應之原點時刻Tog係如圖14般如間隔時間Tha、Tab、Tbc…般產生。此處,於將對應於反射面RPa之原點時刻Tog設為起點時,經修正之原點訊號SZn'(修正原點訊號SZn')之與反射面RPa對應之原點時刻Tog'係以自與之前之反射面RPh對應之原點時刻Tog'起成為基準時間Tsr'之方式調整延遲時間△Toa而產生。進而,經修正之原點訊號SZn'之與反射面RPb對應之原點時刻Tog'係以自與前一反射面RPa對應之原點時刻Tog'起成為基準時間Tsr'之方式調整延遲時間△Tob而產生。同樣地,以與其他反射面RPc~RPh之各者對應之修正後之原點訊號SZn'的原點時刻Tog'亦相對於與之前之反射面RPb~RPg之各者對應之修正後之原點訊號SZn'的原點時刻Tog'成為基準時間Tsr'之方式,僅修正延遲時間△Toc、△Tod、△Toe、△Tof、△Tog、△Toh。反射面RPa~RPh之各者之延遲時間△Toa~△Toh係根據與如圖14般特定出之間隔時間Tab~Tha之各者與基準時間Tsr'之差值而求出。 Therefore, in this embodiment, each of the origin interval time △Tma~△Tmh of the origin signal SZn output with the characteristics shown in Figure 14 is corrected by the delay circuit in a manner consistent with the reference time Tsr' . FIG. 15 is a timing diagram illustrating the generation state of the origin signal SZn' obtained by correcting the origin signal SZn. In FIG. 15, the time period from the origin time Tog generated corresponding to the reflecting surface RPa of the polygon mirror PM in the origin signal SZn to the origin time Tog generated corresponding to the next reflecting surface RPb is representatively shown in FIG. The state is corrected, but the other reflecting surfaces RPb~RPh are also corrected in the same way. The origin time Tog corresponding to each of the reflection surfaces RPa and RPb of the origin signal SZn is generated like the interval time Tha, Tab, Tbc... as shown in FIG. 14. Here, when the origin time Tog corresponding to the reflecting surface RPa is set as the starting point, the origin time Tog' of the corrected origin signal SZn' (corrected origin signal SZn') corresponding to the reflecting surface RPa is It is generated by adjusting the delay time ΔToa so that it becomes the reference time Tsr' from the origin time Tog' corresponding to the previous reflecting surface RPh. Furthermore, the origin time Tog' of the corrected origin signal SZn' corresponding to the reflecting surface RPb is adjusted so that the delay time Δ is the reference time Tsr' from the origin time Tog' corresponding to the previous reflecting surface RPa Tob is generated. Similarly, the origin time Tog' of the corrected origin signal SZn' corresponding to each of the other reflecting surfaces RPc~RPh is also relative to the corrected origin corresponding to each of the previous reflecting surfaces RPb~RPg. When the origin time Tog' of the point signal SZn' becomes the reference time Tsr', only the delay time △Toc, △Tod, △Toe, △Tof, △Tog, △Toh are corrected. The delay time △Toa~△Toh of each of the reflective surfaces RPa~RPh is calculated based on the difference between each of the interval times Tab~Tha specified as shown in Figure 14 and the reference time Tsr'.
圖16係表示如圖15般輸入來自光電轉換元件DTo之原點訊號SZn並產生經修正之原點訊號SZn'(修正原點訊號SZn')之修正電路(修正部)之構成的一例。該修正電路被設置為圖6所示之描繪控制裝置200之一部分。於圖16中,修正電路具有:計數電路210,其對被設定為較來自光源裝置LS之時脈訊號CLK之頻率Fa(400MHz)高之頻率(例如800MHz)的時脈訊號CCK進行計數;移位暫存器212,其對計數電路210設定與間隔時間Tab~Tha之各者對應之預設值;及移位器控制電路214,其控制移位暫存器212之移位動作(暫存器之選擇)。又,於本實施形態中,設置有感測器220及檢測電路222,該感測器220係對圖8所示之旋轉基準標記Mcc之反射光進行光電檢測,該檢測電路222係根據來自感測器220之訊號而產生邏輯位準之轉動脈衝訊號(以多面鏡PM轉1圈計為1脈衝)Sj。移位器控制電路214係根據轉動脈衝訊號Sj及原點訊號SZn而將以多面鏡PM之反射面RPa為起點之移位訊號Sff(位址指定訊號)輸出至移位暫存器212。移 位暫存器212對應於8個反射面RPa~RPh而具有8個暫存器212A,8個暫存器212A係以成為環狀移位暫存器之方式連接,響應於移位訊號Sff而使各暫存器中所保持之預設值依序移位至相鄰之暫存器。來自移位暫存器212之8個暫存器212A中之1個暫存器之輸出被施加至計數電路210。 FIG. 16 shows an example of the configuration of a correction circuit (correction unit) that inputs the origin signal SZn from the photoelectric conversion element DTo and generates a corrected origin signal SZn' (correction origin signal SZn') as shown in FIG. 15. The correction circuit is configured as a part of the
計數電路210係自對應於反射面RPa而產生之原點訊號SZn之原點時刻Tog響應於時脈訊號CCK之脈衝而減去響應於重設訊號RST而設定之來自移位暫存器212之預設值(例如△Toa),於計數值成為零之瞬間產生脈衝狀之原點訊號SZn'。計數電路210係將原點訊號SZn'輸入作為重設訊號RST,於自原點訊號SZn'之原點時刻Tog'起固定時間(未達基準時間Tsr')後,響應於移位訊號Sff讀入並設定來自僅1個移位之移位暫存器212之下一預設值(例如△Tob)。藉由此種動作,自計數電路210輸出之經修正之原點訊號SZn'係以多面鏡PM之反射面RPa~RPh各者之間隔時間Tab~Tha之偏差經修正的大致固定之基準時間Tsr'記錄原點時刻Tog'。 The
再者,移位暫存器212之8個暫存器212A之各者所記憶之預設值被記憶於描繪控制裝置200內之記憶部,且自此讀出而進行預設。圖14所示之間隔時間Tab~Tha與基準時間Tsr'根據多面鏡PM之旋轉速度VR而有所不同,故而針對每一不同之旋轉速度VR,預先測量如圖12、圖14般之特性,決定和與每一旋轉速度VR之基準時間Tsr'相應之延遲時間△Toa~△Toh之各者對應的預設值,並以表格之形式記憶於描繪控制裝置200內之記憶部。因此,於描繪動作時,於將多面鏡PM之旋轉速度VR自標準值(例如38000rpm)變更之情形時,與變更後之多面鏡PM之旋轉速度VR相應之延遲時間△Toa~△Toh的預設值被自描繪控制裝置200內之記憶部之表格讀出,並設定於移位暫存器212之暫存器212A。與描繪控制裝置200內之表格中所記憶之延遲時間△Toa~△Toh對應之預設值之組係例如根據在如40000rpm、38000rpm、36000rpm…般每次變化2000rpm之狀態 下對多面鏡PM之旋轉速度VR進行實測所得之資料而製成,與該期間之旋轉速度VR對應之延遲時間△Toa~△Toh之預設值亦可藉由線性內插而求出。 Furthermore, the preset values memorized by each of the 8
根據以上之實施形態,藉由將修正原點訊號SZn'用於描繪開始之控制,描繪開始點之再現性提高,並且多面鏡PM之反射面RPa~RPh之各者之原點時刻Tog'的偏差減少,故而描繪開始點之基板P上之主掃描方向之絕對位置的偏差亦減少,所描繪之圖案之品質提高。 According to the above embodiment, by using the corrected origin signal SZn' for the control of the drawing start, the reproducibility of the drawing start point is improved, and the origin time Tog' of each of the reflecting surfaces RPa~RPh of the polygon mirror PM The deviation is reduced, so the deviation of the absolute position of the main scanning direction on the substrate P at the drawing start point is also reduced, and the quality of the drawn pattern is improved.
[變形例1] [Modification 1]
如圖1所示,若鄰接地設置複數個描繪單元Un,則各描繪單元Un內之溫度容易上升。亦可藉由描繪單元Un之空調或溫調而抑制溫度上升,但為減小使多面鏡PM高速旋轉時產生之噪聲(風噪聲),針對每個描繪單元Un設置殼體或於多面鏡PM之周圍設置外罩,故而有空調或溫調未有效地發揮作用之情況。即,難以良好地抑制多面鏡PM之周圍或原點感測器(光束送光部60a、光束受光部60b)之周圍之空氣溫度的變化。若為實現輕量化而將多面鏡PM之母材設為鋁,則根據此種溫度變化之程度,亦有多面鏡PM之反射面之狀態以次微米級變形之情況。又,於產生原點檢測用光束Bga之光束送光部(光束送光系統)60a之透鏡系統GLa為實現與半導體雷射光源LDo一體地單元化而為塑膠製(樹脂模具)之情形時,根據周圍溫度之變化,朝向多面鏡PM之光束Bga容易自平行狀態變動為具有收斂性或發散性之光束。因此,聚光於光電轉換元件DTo上之反射光束Bgb之點光SPr之聚焦狀態變化,原點訊號SZn之再現性降低或朝向多面鏡PM之光束Bga之角度略微偏移。 As shown in FIG. 1, if a plurality of drawing units Un are arranged adjacently, the temperature in each drawing unit Un will easily rise. The temperature rise can also be suppressed by the air conditioning or temperature adjustment of the drawing unit Un, but in order to reduce the noise (wind noise) generated when the polygon mirror PM is rotated at a high speed, a housing or a polygon mirror PM is provided for each drawing unit Un An outer cover is set around it, so there are cases where the air conditioning or temperature control does not work effectively. That is, it is difficult to satisfactorily suppress changes in air temperature around the polygon mirror PM or around the origin sensor (the light
因此,於本變形例中,設置精密地測量多面鏡PM之周圍或原點感測器(光束送光部60a、光束受光部60b)之周圍之溫度的溫度感測器,預先求出實測之原點訊號SZn之再現性(3σ值)與原點間隔時間△Tma~△Tmh(或圖14之間隔時間Tab~Tha)相對於溫度變化之變化係數,根據利用溫度感測器所 測量之溫度而修正與設定於圖16之移位暫存器212之延遲時間△Toa~△Toh之各者對應之預設值。藉此,可減少描繪圖案之開始點因描繪單元Un之溫度變化而於主掃描方向上產生偏差之情況。 Therefore, in this modified example, a temperature sensor that precisely measures the temperature around the polygon mirror PM or around the origin sensor (
[變形例2] [Modification 2]
圖17係表示變形例2之原點感測器之構成之圖,且為於XY面內觀察描繪單元Un內之多面鏡PM、fθ透鏡系統FT之光軸AXf、構成原點感測器之光束送光部60a、光束受光部60b之配置而得之圖。於圖17中,朝向多面鏡PM之反射面RP中之1個反射面RPa投射描繪用光束LBn,對多面鏡PM之反射面RPa之1個相鄰(前1個)之反射面RPb投射來自光束送光部60a之雷射光束(原點檢測用光束)Bga。又,圖17中之反射面RPa之角度位置表示描繪用光束LBn之點光SP即將位於描繪線SLn之描繪開始點之前之狀態。此處,多面鏡PM之反射面RP(RPa)係以位於與fθ透鏡系統FT之光軸AXf正交之入射瞳面之方式配置。嚴格而言,於入射至fθ透鏡系統FT之光束LBn之主光線成為與光軸AXf同軸之瞬間之反射面RP(RPa)的角度位置,於自反射鏡M23朝向多面鏡PM之光束LBn之主光線與光軸AXf交叉之位置設定反射面RP(RPa)。又,自fθ透鏡系統FT之主面至基板P之表面(點光SP之聚光點)為止之距離為焦點距離fo。 Fig. 17 is a diagram showing the configuration of the origin sensor of
來自光束送光部60a之光束Bga係藉由與圖4相同之透鏡系統GLa而作為對基板P之感光性功能層為非感光性之波長區域之平行光束被投射至多面鏡PM之反射面RPb。於反射面RPb反射之雷射光束Bga之反射光束Bgb朝向具有與XY面垂直之反射面之反射鏡(反射光學構件)MRa。於反射鏡MRa反射之光束Bgb之反射光束Bgc再次朝向多面鏡PM之反射面RPb投射。於反射面RPb反射之光束Bgc之反射光束Bgd被光束受光部60b接收。光束受光部60b係於多面鏡PM之反射面RPb(及其他各反射面RP)在XY面內成為特定之角度位置之瞬間,使光束Bga、Bgb、Bgc、Bgd如圖17般行進,光束受光部60b輸出脈衝狀之原點 訊號SZn。於圖17中,將光束Bga簡單地表示為線,但實際上,設定為成為於XY面內在多面鏡PM之反射面RP之旋轉方向上具有既定之寬度之平行光束。同樣地,於圖17中將光束Bgd簡單地表示為線,但實際上成為於XY面內具有既定之寬度之平行光束,光束Bgd相應於多面鏡PM之旋轉而對光束受光部60b如箭頭Aw般進行掃描。與圖4同樣地,光束受光部60b具有:光電轉換元件DTo,其於接收光束Bgd時輸出原點訊號SZn;及透鏡系統GLb,其將光束Bgd於光電轉換元件DTo上聚光為點光SPr。 The light beam Bga from the light
於本變形例2中,如圖17般以如下方式構成:使用反射鏡MRa,利用光電轉換元件DTo接收使原點檢測用光束Bga於多面鏡PM之反射面RP(RPb)反射2次後之光束Bgd之點光SPr。因此,可使受光面PD1、PD2上之點光SPr之掃描速度Vh與使原點檢測用光束Bga於多面鏡PM之反射面RP(RPb)反射1次並利用光電轉換元件DTo接收之圖4之情形相比成為2倍以上。藉此,與描繪用光束LBn(點光SP)於基板P上之掃描速度Vsp相比,可使光電轉換元件DTo上之原點檢測用光束Bgd(點光SPr)之掃描速度Vh加快為2倍左右,而可與第1實施形態同樣地使原點訊號SZn之再現性變得良好。但,於本變形例2中,無需使設置於光束受光部60b之透鏡系統GLb之焦點距離Fgs成為fθ透鏡系統FT之焦點距離fo之2倍以上,即便設為相同之焦點距離亦可使點光SPr之掃描速度Vh為點光SP之掃描速度Vsp之2倍。 In this
又,於本變形例2中,對被投射描繪用光束LBn之多面鏡PM之反射面RPa之前一個反射面RPb投射原點檢測用光束Bga。因此,於如圖17般之原點感測器之情形時,以如下方式進行設定:於以描繪用光束LBn之點光SP位於描繪線SLn之描繪開始點之稍微前方之方式設定反射面RPa之角度之瞬間,來自圖17之光束受光部60b之原點訊號SZn成為原點時刻Tog。如此,即便為利用多面鏡PM之不同之反射面反射描繪用光束LBn及原點檢測用光束Bga之構成,亦可如第 1實施形態般,產生經修正之原點訊號SZn',藉此可減少描繪圖案之開始點於主掃描方向產生偏差之情況。 Moreover, in this
[第2實施形態] [Second Embodiment]
於第2實施形態中,利用自描繪單元Un投射之光束LBn之點光SP掃描形成於圖1所示之旋轉筒DR之外周面之基準圖案,根據利用圖2所示之光檢測器DTc對自基準圖案產生之反射光進行檢測而得之光電訊號,確認原點訊號SZn之再現性或原點間隔時間△Tma~△Tmh(或圖14之間隔時間Tab~Tha),或設定延遲時間Toa~Toh。再者,例如於國際公開公報第2015/152217號中揭示於旋轉筒DR之外周面設置基準圖案,利用描繪單元Un內之光檢測器DTc檢測利用點光SP掃描基準圖案時產生之正反射光之構成。 In the second embodiment, the spot light SP of the light beam LBn projected from the drawing unit Un is used to scan the reference pattern formed on the outer peripheral surface of the rotating drum DR shown in FIG. The photoelectric signal obtained from the detection of the reflected light generated by the reference pattern, confirm the reproducibility of the origin signal SZn or the origin interval time △Tma~△Tmh (or the interval time Tab~Tha in Figure 14), or set the delay time Toa ~Toh. Furthermore, for example, it is disclosed in International Publication No. 2015/152217 that a reference pattern is provided on the outer peripheral surface of the rotating drum DR, and the light detector DTc in the drawing unit Un is used to detect the regular reflection light generated when the reference pattern is scanned by the spot light SP. The composition.
圖18係表示利用點光SP掃描形成於旋轉筒DR之外周面之線與間隙狀之基準圖案PTL1、PTL2時自光檢測器DTc產生之光電訊號Sv之波形之一例的圖。基準圖案PTL1係點光SP之主掃描方向之線寬為20μm且朝副掃描方向延伸之低反射率之線狀圖案,基準圖案PTL2係主掃描方向之線寬為20μm且朝副掃描方向延伸之高反射率之線狀圖案。若利用點光SP掃描此種基準圖案PTL1、PTL2,則自基準圖案PTL1產生之正反射光之強度變低,且自基準圖案PTL2產生之正反射光之強度變高。由於fθ透鏡系統FT為遠心,故而來自基準圖案PTL1、PTL2之正反射光沿圖2之描繪用光束LBn之光路逆進,並到達偏振分光鏡BS1為止。於圖2中雖省略了圖示,但設置有將透過偏振分光鏡BS1之正反射光(與光束LBn相同之平行光束)聚光於光檢測器DTc之聚光透鏡。藉此,基板P或旋轉筒DR之外周面與光檢測器DTc之受光面共軛,於光檢測器DTc之受光面形成有投射至基準圖案PTL1、PTL2上之點光SP之共軛像。因此,來自光檢測器DTc之訊號Sv於點光SP投射基準圖案PTL1之期間成為低位準,於投射基準圖案PTL2之期間成為高位準。 18 is a diagram showing an example of the waveform of the photoelectric signal Sv generated from the photodetector DTc when the line and gap-like reference patterns PTL1 and PTL2 formed on the outer peripheral surface of the rotating drum DR are scanned by the spot light SP. The reference pattern PTL1 is a low-reflectivity linear pattern with a line width of 20μm in the main scanning direction of the spot light SP and extending in the sub-scanning direction. The reference pattern PTL2 is a line pattern with a line width of 20μm in the main scanning direction and extending in the sub-scanning direction. Linear pattern with high reflectivity. If such reference patterns PTL1 and PTL2 are scanned by the spot light SP, the intensity of the regular reflection light generated from the reference pattern PTL1 becomes lower, and the intensity of the regular reflection light generated from the reference pattern PTL2 becomes higher. Since the fθ lens system FT is telecentric, the regular reflection light from the reference patterns PTL1 and PTL2 travels backward along the optical path of the drawing beam LBn in FIG. 2 and reaches the polarization beam splitter BS1. Although not shown in FIG. 2, a condenser lens is provided for condensing the regular reflection light (the same parallel light beam as the light beam LBn) transmitted through the polarizing beam splitter BS1 on the photodetector DTc. Thereby, the outer peripheral surface of the substrate P or the rotating drum DR is conjugated with the light-receiving surface of the photodetector DTc, and a conjugate image of the spot light SP projected on the reference patterns PTL1 and PTL2 is formed on the light-receiving surface of the photodetector DTc. Therefore, the signal Sv from the photodetector DTc becomes a low level during the projection of the reference pattern PTL1 by the spot light SP, and becomes a high level during the projection of the reference pattern PTL2.
利用來自使點光SP進行脈衝發光之光源裝置LS之時脈訊號CLK、或使時脈訊號CLK倍增而得之取樣時脈訊號將來自光檢測器DTc之訊號Sv之波形變化進行數位轉換後記憶並分析,藉此,可根據以原點訊號SZn之原點時刻Tog(或經修正之原點訊號SZn'之原點時刻Tog')為基準之點光SP之掃描位置,測量基準圖案PTL1、PTL2之朝副掃描方向延伸之邊緣位置。 Using the clock signal CLK from the light source device LS that pulses the spot light SP to emit light, or the sampling clock signal obtained by multiplying the clock signal CLK, the waveform change of the signal Sv from the photodetector DTc is digitally converted and then memorized And analyze, according to the origin time Tog of the origin signal SZn (or the origin time Tog' of the corrected origin signal SZn') as the reference point light SP scanning position to measure the reference pattern PTL1 The edge position of PTL2 extending in the sub-scanning direction.
圖19係表示對來自光檢測器DTc之訊號Sv之波形進行數位取樣之電路構成的一例,由如下構件構成:A/D轉換部240,其輸入訊號Sv並響應於取樣時脈訊號CLK2而將訊號Sv之位準進行數位轉換;倍增部241,其產生使來自光源裝置LS之時脈訊號CLK之頻率Fa倍增2倍之取樣時脈訊號(以下簡稱為時脈訊號)CLK2;波形記憶部(記憶部)242,其響應於時脈訊號CLK2而記憶利用A/D轉換部240進行數位轉換而得之資料;位址產生部244,其根據經修正之原點訊號SZn'與時脈訊號CLK2而產生於波形記憶部242記憶資料時之記憶位址值;及波形分析部246,其包含讀出並分析波形記憶部242中所記憶之訊號Sv之波形資料之CPU。利用波形分析部246加以分析而得之資訊被發送至圖6之描繪控制裝置200,用於原點訊號SZn'之再現性(3σ值)或間隔時間Tab~Tha之確認、或延遲時間Toa~Toh之修正。 Fig. 19 shows an example of the circuit configuration for digitally sampling the waveform of the signal Sv from the photodetector DTc. The level of the signal Sv is digitally converted; the
圖20係表示使用圖19之電路構成測量原點訊號SZn'(或原點訊號SZn)之原點時刻Tog'(或原點時刻Tog)之產生時序的偏差之一例之時序圖。於本實施形態中,於旋轉筒DR之外周面,在與應確認之描繪單元Un之描繪線SLn之掃描開始點的附近對應之副掃描方向(Y方向)之位置,形成有如圖16般之基準圖案PTL1、PTL2。於本實施形態中,以基準圖案PTL1、PTL2位於描繪線SLn上之方式設定旋轉筒DR之旋轉角度並使其靜止。 FIG. 20 is a timing diagram showing an example of a deviation in the generation timing of the origin time Tog' (or origin time Tog) of the origin signal SZn' (or origin signal SZn) using the circuit configuration of FIG. 19; In this embodiment, on the outer peripheral surface of the rotating drum DR, a position in the sub-scanning direction (Y direction) corresponding to the vicinity of the scanning start point of the drawing line SLn of the drawing unit Un to be confirmed is formed as shown in FIG. 16 Reference patterns PTL1 and PTL2. In this embodiment, the rotation angle of the rotating drum DR is set so that the reference patterns PTL1 and PTL2 are located on the drawing line SLn and made to stand still.
如圖20般,於緊隨自修正原點訊號SZn'之原點時刻Tog'起固定之延遲時間△TD之後,使來自圖6所示之光源裝置LS之光束LB以振盪頻率Fa進行脈 衝振盪,而開始描繪。又,於光束LB之脈衝振盪即將開始前,對應於成為對象之描繪單元Un之選擇用光學元件OSn亦成為接通狀態。選擇用光學元件OSn成為接通狀態且光束LB被作為光束LBn供給至對象之描繪單元Un之期間,光束LBn之點光SP被設定為如橫穿基準圖案PTL1、PTL2般之範圍。於該接通狀態之期間,來自光源裝置LS之光束LB以頻率Fa連續振盪。當點光SP緊隨延遲時間△TD之後對旋轉筒DR之表面進行掃描時,來自光檢測器DTc之光電訊號Sv以如圖20般之波形發生位準變化。位址產生部244係自原點時刻Tog'起延遲時間△Tu後之時刻Tu1,產生響應於時脈訊號CLK2之時脈脈衝而逐次遞增之位址值,波形記憶部242係於經指定之位址值,依序記憶來自A/D轉換部240之數位值(與訊號Sv之位準相應之值)。此處,延遲時間△Tu被設定為△Tu>△TD,並且被設定為點光SP到達基準圖案PTL1、PTL2之前之時間。 As shown in FIG. 20, immediately after the fixed delay time ΔTD from the origin time Tog' of the corrected origin signal SZn', the light beam LB from the light source device LS shown in FIG. 6 is pulse-oscillated at the oscillation frequency Fa , And began to describe. In addition, just before the pulse oscillation of the light beam LB starts, the optical element OSn for selection corresponding to the drawing unit Un to be the object is also turned on. While the optical element OSn for selection is turned on and the light beam LB is supplied to the target drawing unit Un as the light beam LBn, the spot light SP of the light beam LBn is set to traverse the range of the reference patterns PTL1 and PTL2. During the on-state, the light beam LB from the light source device LS continuously oscillates at the frequency Fa. When the spot light SP scans the surface of the rotating drum DR immediately after the delay time ΔTD, the photoelectric signal Sv from the photodetector DTc changes in level with a waveform as shown in FIG. 20. The
藉由位址產生部244與波形記憶部242,將於自時刻Tu1至時刻Tu2為止之固定時間、即點光SP對包含基準圖案PTL1、PTL2之距離進行掃描之期間中,將訊號Sv之波形資料以時脈訊號CLK2之時間解析度記憶於波形記憶部242。如上所述之波形記憶之動作係每當藉由多面鏡PM之經指定之1個反射面RP(例如RPa)掃描光束LBn時便進行所需次數,於波形記憶部242,記憶有複數個藉由利用多面鏡PM之相同之反射面RP進行掃描之點光SP而產生之光電訊號Sv之自時刻Tu1至時刻Tu2之波形資料。波形分析部246對所記憶之複數個波形資料進行分析,確認原點訊號SZn'之原點時刻Tog'之再現性是否處於既定之規格內。為此,波形分析部246特定出於訊號Sv之波形變化中,對應於基準圖案PTL1、PTL2之各邊緣位置而上升或下降之位置(位址位置),求出各基準圖案PTL1(低反射率)之中點位置,進而求出其等中點位置之平均位置CTu(位址位置)。波形記憶部242中所記憶之1個波形資料之位址值對應於時脈訊號CLK2之時脈脈衝,故而自時刻Tu1至平均位置CTu為止之時間可根據時脈訊號CLK2之週期與自 時刻Tu1至平均位置CTu為止之位址數之積進行換算,推算自原點訊號SZn'之原點時刻Tog'至平均位置CTu為止之時間△TPc。波形分析部246對所記憶之複數個波形資料之各者進行此種分析,推算複數個時間△TPc。波形分析部246根據經推算之複數個時間△TPc之偏差之標準偏差值σ而求出3σ值,且將該3σ值發送至描繪控制裝置200。 With the
又,為確認對應於多面鏡PM之各反射面RPa~RPh而產生之修正原點訊號SZn'之原點時刻Tog'之間隔時間Tab~Tha之各者是否被修正為基準時間Tsr',而對圖19之電路構成附加對時脈訊號CLK2進行計數之計數電路,例如,對修正原點訊號SZn'中之對應於多面鏡PM之反射面RPa而產生之原點時刻Tog'與對應於反射面RPa之下一反射面RPb而產生之原點時刻Tog'之間隔時間進行多次測量,求出其平均值並發送至描繪控制裝置200。對其他反射面間之間隔時間亦同樣地進行測量,並將所求出之間隔時間之平均值發送至描繪控制裝置200。描繪控制裝置200確認發送來之間隔時間Tab~Tha之各者相對於基準時間Tsr'是否為容許範圍內,於具有容許範圍以上之誤差之情形時,修正對圖16之移位暫存器212設定之延遲時間△Toa~△Toh。 In addition, in order to confirm whether each of the interval time Tab~Tha of the origin time Tog' of the corrected origin signal SZn' generated corresponding to each reflecting surface RPa~RPh of the polygon mirror PM is corrected to the reference time Tsr', and Add a counting circuit that counts the clock signal CLK2 to the circuit configuration of FIG. 19, for example, the origin time Tog' generated by the corrected origin signal SZn' corresponding to the reflecting surface RPa of the polygon mirror PM and the corresponding reflection The interval time of the origin time Tog′ generated by a reflecting surface RPb under the surface RPa is measured multiple times, and the average value is calculated and sent to the
根據以上之第2實施形態,可抑制因經修正之原點訊號SZn'(或修正前之原點訊號SZn)之經時變動而產生之描繪開始位置之偏差,且可長期地以穩定之精度實現圖案描繪。再者,於本實施形態中,使用形成於旋轉筒DR之外周面之基準圖案PTL1、PTL2確認原點訊號SZn'之再現性或間隔時間Tab~Tha,但亦可檢測設置於基板P之基準圖案PTL1、PTL2。又,亦可將形成有基準圖案PTL1、PTL2之單片之基準片材(例如厚度與基板P相同且具有可撓性,變形較少之極薄之玻璃片材或不鏽鋼片材等)捲繞並固定於旋轉筒DR之周圍。 According to the above second embodiment, it is possible to suppress the deviation of the drawing start position caused by the time-dependent variation of the corrected origin signal SZn' (or the origin signal SZn before the correction), and the accuracy can be stabilized for a long time Realize pattern drawing. Furthermore, in this embodiment, the reference patterns PTL1 and PTL2 formed on the outer peripheral surface of the rotating drum DR are used to confirm the reproducibility of the origin signal SZn' or the interval Tab~Tha, but the reference set on the substrate P can also be detected Patterns PTL1, PTL2. In addition, a single reference sheet (for example, an extremely thin glass sheet or stainless steel sheet with the same thickness as the substrate P, flexibility, and less deformation) formed with reference patterns PTL1 and PTL2 can also be wound And fixed around the rotating drum DR.
[第3實施形態] [Third Embodiment]
圖21係說明用以檢驗第3實施形態之修正原點訊號SZn'(或修正前之原點訊 號SZn)之精度之測試曝光的方法之圖,於本實施形態中,藉由成為對象之1個描繪單元Un,而於形成有感光層之基板P上在主掃描方向與副掃描方向上呈矩陣狀配置並曝光複數個矩形之測試圖案Tpt。但,於本實施形態中,排列於副掃描方向之複數個測試圖案Tpt中之曝光於行MPa之測試圖案Tpt被以僅利用多面鏡PM之反射面RPa進行描繪之方式加以控制,曝光於行MPb之測試圖案Tpt被以僅利用多面鏡PM之反射面RPb進行描繪之方式加以控制。以下同樣地,曝光於行MPc~MPh之各者之測試圖案Tpt被以分別利用多面鏡PM之反射面RPc~RPh之任一者進行描繪之方式加以控制。即,為利用於多面鏡PM轉1圈中僅由所指定之1個反射面反射之光束LBn之點光SP將各測試圖案Tpt曝光,基板P被以正常曝光時之搬送速度之1/8之速度搬送。再者,未必必須於行MPa~MPh內在主掃描方向上配置複數個測試圖案Tpt,但為確認使點光SP進行掃描之描繪線SLn之主掃描方向之每個位置(區域)的測試圖案Tpt之形狀變化而予以配置。 FIG. 21 is a diagram illustrating the test exposure method used to verify the accuracy of the corrected origin signal SZn' (or the origin signal SZn before correction) of the third embodiment. In this embodiment, 1 A drawing unit Un is arranged in a matrix in the main scanning direction and the sub-scanning direction on the substrate P on which the photosensitive layer is formed, and a plurality of rectangular test patterns Tpt are exposed. However, in this embodiment, the test pattern Tpt exposed to line MPa among the plurality of test patterns Tpt arranged in the sub-scanning direction is controlled in such a way that only the reflecting surface RPa of the polygon mirror PM is used for drawing, and the exposure is controlled in the line The test pattern Tpt of MPb is controlled in such a way that only the reflecting surface RPb of the polygon mirror PM is used for drawing. In the same manner below, the test pattern Tpt exposed to each of the rows MPc~MPh is controlled by drawing using any one of the reflecting surfaces RPc~RPh of the polygon mirror PM, respectively. That is, in order to expose each test pattern Tpt using the spot light SP of the light beam LBn reflected by only one of the designated reflecting surfaces during one revolution of the polygon mirror PM, the substrate P is exposed at 1/8 of the conveying speed during normal exposure The speed of transportation. Furthermore, it is not necessary to arrange a plurality of test patterns Tpt in the main scanning direction in the rows MPa~MPh, but to confirm the test patterns Tpt for each position (area) in the main scanning direction of the drawing line SLn for scanning the spot light SP The shape changes to be configured.
經測試曝光之基板P亦可設為將伸縮較少之單片之PEN膜、極薄之玻璃片材或不鏽鋼片材整齊地貼附於旋轉筒DR之外周面而得者。於將經測試曝光之基板P進行顯影處理或蝕刻處理之後,利用檢查裝置等放大觀察測試圖案Tpt之朝副掃描方向延伸之邊緣部Ef、Et之形成狀態。於測試圖案Tpt之邊緣部Ef、Et例如如圖13般產生偏差之情形時,與描繪該測試圖案Tpt之多面鏡PM之反射面對應的修正原點訊號SZn'之原點時刻Tog'之再現性劣化。 The tested and exposed substrate P can also be set to be obtained by neatly attaching a single piece of PEN film, an extremely thin glass sheet or a stainless steel sheet to the outer peripheral surface of the rotating drum DR with less expansion and contraction. After the test-exposed substrate P is subjected to development processing or etching processing, an inspection device or the like is used to enlarge and observe the formation state of the edge portions Ef and Et of the test pattern Tpt extending in the sub-scanning direction. When the edge portions Ef and Et of the test pattern Tpt are deviated, for example, as shown in Fig. 13, the reproduction of the origin time Tog' of the corrected origin signal SZn' corresponding to the reflecting surface of the polygon mirror PM depicting the test pattern Tpt Sexual deterioration.
又,如圖21般,利用多面鏡PM之8個反射面RPa~RPh之各者所描繪之測試圖案Tpt的8個行MPa~MPh之組係於副掃描方向上重複形成。而且,例如,特定出將第1行MPa中之第1測試圖案Tpt之中心位置和與第1行MPa於副掃描方向上隔開之第2行MPa中且與第1測試圖案Tpt於主掃描方向上位於相同之位置的第2測試圖案Tpt之中心位置連結的直線Lcc,並測量沿著該直線Lcc排列於副掃描方向之測試圖案Tpt之各者之邊緣部Ef、Et間的中心位置與直線Lcc之主掃描 方向之位置誤差△Ytt。該等位置誤差△Ytt於修正原點訊號SZn'之間隔時間Tab~Tha之各者被精密地調整為基準時間Tsr'之情形時成為大致相同之量。然而,於在行MPb~MPh中,所測量出之位置誤差△Ytt產生偏差之情形時,意味著間隔時間Tab~Tha之向基準時間Tsr'之修正偏離。即,修正前之原點訊號SZn之間隔時間Tab~Tha變動。藉由對該等位置誤差△Ytt進行分析,可推斷間隔時間Tab~Tha之變動,故而描繪控制裝置200將延遲時間Toa~Toh進行修正並對移位暫存器212進行設定。 Furthermore, as shown in FIG. 21, the group of 8 rows MPa~MPh of the test pattern Tpt drawn by each of the 8 reflecting surfaces RPa~RPh of the polygon mirror PM is repeatedly formed in the sub-scanning direction. And, for example, specify the center position of the first test pattern Tpt in the first row MPa and the second row MPa separated from the first row MPa in the sub-scanning direction, and the first test pattern Tpt in the main scan A straight line Lcc connecting the center positions of the second test pattern Tpt at the same position in the direction, and the center position between the edge portions Ef and Et of each of the test patterns Tpt arranged in the sub-scanning direction along the straight line Lcc and The position error of the main scanning direction of the straight line Lcc is △Ytt. The position error ΔYtt becomes approximately the same amount when each of the interval time Tab~Tha of the correction origin signal SZn' is precisely adjusted to the reference time Tsr'. However, in the case where the measured position error △Ytt has a deviation in the lines MPb~MPh, it means the correction deviation of the interval time Tab~Tha from the reference time Tsr'. That is, the interval time Tab~Tha of the origin signal SZn before correction changes. By analyzing the position error ΔYtt, the change of the interval time Tab~Tha can be inferred. Therefore, the
以上,根據本實施形態,對僅藉由多面鏡PM之1個反射面而曝光於基板P上之圖案(測試圖案)進行檢查,故而可確認與修正原點訊號SZn'(或修正前之原點訊號SZn)之反射面RPa~RPh之各者對應地產生之原點時刻Tog'(或原點時刻Tog)之再現性。進而,亦可確認多面鏡PM之反射面RPa~RPh之間之間隔時間Tab~Tha之偏差之變化。 As described above, according to the present embodiment, the pattern (test pattern) exposed on the substrate P by only one reflecting surface of the polygon mirror PM is inspected, so that the origin signal SZn' (or the original before correction) can be confirmed and corrected. The reproducibility of the origin time Tog' (or origin time Tog) generated by each of the reflective surfaces RPa~RPh of the point signal SZn). Furthermore, it is also possible to confirm the variation of the deviation of the interval time Tab~Tha between the reflecting surfaces RPa~RPh of the polygon mirror PM.
[第3實施形態之變形例] [Modifications of the third embodiment]
於如圖21般進行測試曝光之情形時,必須使旋轉筒DR以既定之速度(正常速度之1/8)精密地旋轉,且於測試曝光中,亦必須使旋轉筒DR不於中心軸AXo延伸之方向(主掃描方向)上少許位移。然而,難以將旋轉筒DR之主掃描方向之位置變動抑制為微米級或次微米級。 In the case of test exposure as shown in Figure 21, the rotating drum DR must be precisely rotated at a predetermined speed (1/8 of the normal speed), and during the test exposure, the rotating drum DR must also be made not to the central axis AXo A slight displacement in the direction of extension (main scanning direction). However, it is difficult to suppress the position variation of the rotating drum DR in the main scanning direction to the micron level or sub-micron level.
因此,於本變形例中,如圖22所示,在旋轉筒DR之外周面中之中心軸AXo延伸之方向的端部,設置於圓周方向上連續之線狀之基準圖案PTL3。進而,設置如下構件:圖案檢測器DXa,其被設定於第奇數個描繪線SL1、SL3、SL5之Y軸方向(主掃描方向)之延長線上,且具備檢測基準圖案PTL3之檢測區域Axv;及圖案檢測器DXb,其被設定於第偶數個描繪線SL2、SL4、SL6之Y軸方向(主掃描方向)之延長線上,且具備檢測基準圖案PTL3之檢測區域Axv。圖案檢測器DXa、DXb能以次微米級隨時測量線狀之基準圖案PTL3之檢測 區域Axv內之Y軸方向的少許位移。又,於未在旋轉筒DR之外周面設置基準圖案PTL3之情形時,亦可於旋轉筒DR之中心軸AXo延伸之方向之端面部形成與中心軸AXo正交之基準平面,利用靜電電容式或光學式之非接觸間隙感測器(線性感測器)GSa、GSb對該基準平面之Y軸方向之位移進行測量。於在與中心軸AXo正交之XZ面內觀察時,間隙感測器GSa之測量位置被設定為與第奇數個描繪線SL1、SL3、SL5之方位相同,於在XZ面內觀察時,間隙感測器GSb之測量位置被設定為與第偶數個描繪線SL2、SL4、SL6之方位相同。 Therefore, in this modified example, as shown in FIG. 22, the end of the direction in which the central axis AXo extends on the outer peripheral surface of the rotating drum DR is provided with a continuous linear reference pattern PTL3 in the circumferential direction. Furthermore, the following components are provided: a pattern detector DXa, which is set on the extension line of the odd-numbered drawing lines SL1, SL3, SL5 in the Y-axis direction (main scanning direction) and equipped with the detection area Axv of the detection reference pattern PTL3; and The pattern detector DXb is set on the extension line of the even-numbered drawing lines SL2, SL4, SL6 in the Y-axis direction (main scanning direction), and has a detection area Axv of the detection reference pattern PTL3. The pattern detectors DXa and DXb can measure a small displacement in the Y-axis direction in the detection area Axv of the linear reference pattern PTL3 at any time at the sub-micron level. In addition, when the reference pattern PTL3 is not provided on the outer peripheral surface of the rotating drum DR, it is also possible to form a reference plane orthogonal to the central axis AXo on the end face of the rotating drum DR in the direction in which the central axis AXo extends. Or optical non-contact gap sensors (linear sensors) GSa and GSb measure the displacement of the reference plane in the Y-axis direction. When viewed in the XZ plane orthogonal to the central axis AXo, the measurement position of the gap sensor GSa is set to be the same as the orientation of the odd-numbered drawing lines SL1, SL3, SL5. When viewed in the XZ plane, the gap The measurement position of the sensor GSb is set to be the same as the orientation of the even-numbered drawing lines SL2, SL4, SL6.
於進行如圖21般之測試曝光時,利用圖案檢測器DXa、DXb或間隙感測器GSa、GSb測量將排列於副掃描方向之複數個測試圖案Tpt之各者曝光時之旋轉筒DR(基板P)之Y軸方向之位置位移的值,且例如記憶於描繪控制裝置200。而且,於利用檢查裝置等測量呈矩陣狀曝光於基板P之測試圖案Tpt之位置關係時,利用所記憶之位置位移之值修正測試圖案Tpt之Y方向(主掃描方向)之測量值。藉此,可將於測試曝光時產生之由旋轉筒DR(基板P)之朝Y軸方向的少許之位置變動所致之誤差抵消,並高精度地檢查對應於多面鏡PM之反射面RPa~RPh之各者而產生之修正原點訊號SZn'(或修正前之原點訊號SZn)之再現性,進而亦可高精度地檢查多面鏡PM之反射面RPa~RPh之間之原點間隔時間Tab~Tha之偏差的變化。 During the test exposure as shown in Figure 21, the pattern detectors DXa, DXb or the gap sensors GSa, GSb are used to measure the rotating drum DR (substrate The value of the position displacement in the Y-axis direction of P) is stored in the
[第4實施形態] [Fourth Embodiment]
圖23係表示第4實施形態之旋轉筒DR之局部剖面之圖。於本實施形態中,於旋轉筒DR之外周面之一部分設置較小之開口部50J(亦可為凹陷部),且於此以受光面PD1、PD2垂直地接收來自描繪單元Un之描繪用光束LBn之方式設置如圖5所示般之光電轉換元件DTo。本實施形態係代替檢測如上文之圖20中所說明之來自旋轉筒DR之外周面之基準圖案PTL1、PTL2的正反射光,而利用設置於旋轉筒DR之光電轉換元件DTo直接檢測原點檢測用光束Bgb(或描繪用光束 LBn),並測量修正原點訊號SZn'(或修正前之原點訊號SZn)之再現性或原點間隔時間Tab~Tha之偏差。 Fig. 23 is a view showing a partial cross-section of the rotating drum DR of the fourth embodiment. In this embodiment, a
於上文之圖3所示之第1實施形態中,原點檢測感測器(透鏡系統GLb、光電轉換元件DTo)對自與描繪用(加工用)光束LBn不同之光源投射之原點檢測用光束Bga的於多面鏡PM之反射光束Bgb進行光電檢測。然而,於圖3之配置關係下,在多面鏡PM之反射面RPa成為RPa'之角度位置之後,被反射面RPa反射之反射光束Bgb入射至fθ透鏡系統FT。入射至fθ透鏡系統FT之反射光束Bgb可與描繪用光束LBn同樣地聚光於fθ透鏡系統FT之像面側(旋轉筒DR側)。因此,於本實施形態中,利用如圖23般設置於旋轉筒DR之光電轉換元件DTo對利用多面鏡PM進行掃描並入射至fθ透鏡系統FT之原點檢測用光束Bga之反射光束Bgb進行檢測。於本實施形態中,在基板P未被旋轉筒DR支持之狀態或基板P之透明區域被旋轉筒DR之外周面支持之狀態下,進行利用設置於旋轉筒DR之光電轉換元件DTo所進行之測量。於本實施形態中,於使旋轉筒DR停止之狀態下,光電轉換元件DTo可接收原點檢測用光束Bgb與描繪用光束LBn之兩者。於此情形時,橫穿圖23之光電轉換元件DTo上之描繪用光束LBn之掃描速度與原點檢測用光束Bgb之掃描速度相等。因此,例如使用如圖19所示之倍增化之時脈訊號CCK對原點檢測用光束Bgb之點光位於圖23之光電轉換元件DTo之受光面之中心位置之瞬間的時刻與修正原點訊號SZn'之原點時刻Tog'(或修正前之原點訊號SZn之原點時刻Tog)之間之間隔時間進行計時,藉此,可檢測修正原點訊號SZn'(或修正前之原點訊號SZn)之精度(再現性、原點間隔時間Tab~Tha之偏差)。 In the first embodiment shown in Fig. 3 above, the origin detection sensor (lens system GLb, photoelectric conversion element DTo) detects the origin of the light source projected from a light source different from the drawing (processing) light beam LBn The reflected light beam Bgb of the polygon mirror PM of the light beam Bga is used for photoelectric detection. However, in the arrangement relationship of FIG. 3, after the reflective surface RPa of the polygon mirror PM becomes the angular position of RPa', the reflected light beam Bgb reflected by the reflective surface RPa enters the fθ lens system FT. The reflected light beam Bgb incident on the fθ lens system FT can be condensed on the image surface side (rotating cylinder DR side) of the fθ lens system FT like the drawing light beam LBn. Therefore, in this embodiment, the photoelectric conversion element DTo installed on the rotating drum DR as shown in FIG. 23 is used to detect the reflected light beam Bgb that is scanned by the polygon mirror PM and enters the origin detection light beam Bga of the fθ lens system FT. . In this embodiment, in the state where the substrate P is not supported by the rotating drum DR or the transparent area of the substrate P is supported by the outer peripheral surface of the rotating drum DR, the photoelectric conversion element DTo provided on the rotating drum DR is performed. Measurement. In this embodiment, in the state where the rotating drum DR is stopped, the photoelectric conversion element DTo can receive both the origin detection light beam Bgb and the drawing light beam LBn. In this case, the scanning speed of the drawing light beam LBn across the photoelectric conversion element DTo of FIG. 23 is equal to the scanning speed of the origin detection light beam Bgb. Therefore, for example, using the multiplied clock signal CCK as shown in FIG. 19, the point light of the origin detection beam Bgb is located at the center of the light-receiving surface of the photoelectric conversion element DTo in FIG. 23 and the corrected origin signal The interval time between the origin time Tog' of SZn' (or the origin time Tog of the origin signal SZn before correction) is timed, so that the corrected origin signal SZn' (or the origin signal before correction) can be detected SZn) accuracy (reproducibility, deviation of the time between origins Tab~Tha).
AXo‧‧‧中心軸 AXo‧‧‧Central axis
AXp‧‧‧旋轉軸 AXp‧‧‧Rotation axis
DR‧‧‧旋轉筒 DR‧‧‧Rotating drum
EX‧‧‧曝光裝置(圖案描繪裝置) EX‧‧‧Exposure device (pattern drawing device)
FT‧‧‧fθ透鏡系統(描繪用掃描透鏡) FT‧‧‧fθ lens system (scanning lens for drawing)
IM1~IM6‧‧‧入射鏡 IM1~IM6‧‧‧Entrance mirror
LS‧‧‧光源裝置(脈衝光源裝置) LS‧‧‧Light source device (pulse light source device)
M1~M12‧‧‧反射鏡 M1~M12‧‧‧Mirror
M20~M24‧‧‧反射鏡 M20~M24‧‧‧Mirror
OS1~OS6‧‧‧選擇用光學元件 OS1~OS6‧‧‧Optical components for selection
P‧‧‧基板(被照射體) P‧‧‧Substrate (irradiated body)
PM‧‧‧多面鏡 PM‧‧‧Polygon mirror
RP‧‧‧反射面 RP‧‧‧Reflecting surface
SL1~SL6‧‧‧描繪線 SL1~SL6‧‧‧Drawing line
TR‧‧‧吸收體 TR‧‧‧Absorber
U1~U6‧‧‧描繪單元 U1~U6‧‧‧Drawing unit
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction
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JPWO2018066285A1 (en) | 2019-07-18 |
CN109791281A (en) | 2019-05-21 |
WO2018066285A1 (en) | 2018-04-12 |
CN109791281B (en) | 2021-07-30 |
KR102450792B1 (en) | 2022-10-06 |
JP7040453B2 (en) | 2022-03-23 |
TW201832860A (en) | 2018-09-16 |
KR20190057371A (en) | 2019-05-28 |
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