TWI732320B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TWI732320B
TWI732320B TW108137597A TW108137597A TWI732320B TW I732320 B TWI732320 B TW I732320B TW 108137597 A TW108137597 A TW 108137597A TW 108137597 A TW108137597 A TW 108137597A TW I732320 B TWI732320 B TW I732320B
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gas
substrate
shielding
processing apparatus
cup
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TW108137597A
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TW202025360A (en
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奥谷洋介
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

A substrate processing apparatus (1) includes a substrate holder (5), a substrate rotating section (7), a shielding section (19), a shielding section operating mechanism (21), a processing liquid supply section (9), and a cap (11). The substrate holder (5) holds a substrate (W) horizontally. The substrate rotating section (7) rotates the substrate (W) together with the substrate holder (5) about a central axis (AX) extending in an up-and-down direction. The shielding section (19) is located opposite to an upper surface (Wa) of the substrate (W). The shielding section operating mechanism (21) causes the shielding section (19) to operate. The processing liquid supply section (9) supplies a processing liquid to the substrate (W). The cap (11) is disposed around the substrate holder (5) to receive the processing liquid. The shielding section (19) has an air outlet (191) through which air (AR) toward an inner wall surface (110) of the cap (11) flows out.

Description

基板處理裝置以及基板處理方法 Substrate processing device and substrate processing method

本發明係關於一種基板處理裝置以及基板處理方法。 The present invention relates to a substrate processing device and a substrate processing method.

專利文獻1所記載的基板處理裝置係對基板進行藥液處理。基板處理裝置係具備受液部。受液部係具備杯體(cup)部。在對基板進行藥液處理時,杯體部會上升且已由旋轉夾盤(spin chuck)所保持的基板之周圍係藉由杯體部之導引部所包圍。然後,基板會與旋轉夾盤一起旋轉且從吐出頭朝向基板之上表面供給藥液。藥液係利用藉由基板之旋轉所致的離心力沿基板之上表面而流動且從基板之端緣部朝向側方飛散。從基板之端緣部飛散來的藥液係順著杯體部的導引部之內壁面而流下且從廢棄槽被排出。 The substrate processing apparatus described in Patent Document 1 performs chemical solution processing on a substrate. The substrate processing apparatus includes a liquid receiving part. The liquid receiving part is equipped with a cup part. When the substrate is processed with a chemical solution, the cup body part rises and the periphery of the substrate held by the spin chuck is surrounded by the guide part of the cup body part. Then, the substrate rotates together with the spin chuck, and the chemical solution is supplied from the discharge head toward the upper surface of the substrate. The chemical liquid flows along the upper surface of the substrate by the centrifugal force caused by the rotation of the substrate and is scattered from the edge of the substrate toward the side. The liquid medicine scattered from the edge of the substrate flows down along the inner wall surface of the guide portion of the cup body and is discharged from the waste groove.

特別是,受液部係更具備集液部。集液部係配置於杯體部的導引部之內側。集液部之內周面係具有複數個溝槽。各個溝槽係沿鉛直方向而延伸。從而,從基板之端緣部飛散出的處理液之液滴,首先會附著於集液部之內周面。已附著於內周面的液滴之大部分係沿各個溝槽中的半圓狀之曲面而流動且與其他已附著的液滴匯流。匯流後的液滴係利用比匯流前的液滴更相對大的自身重量沿溝槽之延伸方向流下。 In particular, the liquid receiving part is further equipped with a liquid collecting part. The liquid collecting part is arranged on the inner side of the guiding part of the cup body part. The inner peripheral surface of the liquid collecting part has a plurality of grooves. Each groove extends in the vertical direction. Therefore, the droplets of the processing liquid scattered from the edge portion of the substrate first adhere to the inner peripheral surface of the liquid collecting portion. Most of the liquid droplets attached to the inner peripheral surface flow along the semicircular curved surface in each groove and merge with other attached droplets. The droplets after the confluence flow down along the extending direction of the groove with a relatively larger weight than the droplets before the confluence.

從而,能夠抑制液滴滯留於杯體部之內壁面。結果,能夠減低因放置不管液滴已滯留於杯體部之內壁面的狀態所引起的基板之污染。 Therefore, it is possible to prevent liquid droplets from staying on the inner wall surface of the cup body. As a result, it is possible to reduce the contamination of the substrate caused by the state in which the liquid droplets have been left on the inner wall surface of the cup body portion.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2018-56151號公報。 [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56151.

然而,近年來有被要求更進一步抑制液滴滯留於杯體部之內壁面的期望。 However, in recent years, there has been a desire to further suppress the retention of liquid droplets on the inner wall surface of the cup body.

本發明係有鑑於上述課題而開發完成,其目的在於提供一種能夠有效地抑制液滴滯留於杯體部之內壁面的基板處理裝置以及基板處理方法。 The present invention has been developed in view of the above-mentioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can effectively prevent liquid droplets from staying on the inner wall surface of the cup portion.

依據本發明之一態樣,基板處理裝置,係具有基板保持部、基板旋轉部、遮蔽部、遮蔽部動作機構、處理液供給部以及杯體部。基板保持部係將基板水平地保持。基板旋轉部係以朝向上下方向延伸的中心軸為中心使前述基板與前述基板保持部一體地旋轉。遮蔽部係與前述基板之上表面對向。遮蔽部動作機構係使前述遮蔽部動作。處理液供給部係將處理液供給至前述基板。杯體部係配置於前述基板保持部之周圍以承接前述處理液。前述遮蔽部係具有氣體流出口,前述氣體流出口係供朝向前述杯體部之內壁面的氣體流出。 According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding portion, a substrate rotating portion, a shielding portion, a shielding portion operating mechanism, a processing liquid supply portion, and a cup portion. The substrate holding portion holds the substrate horizontally. The substrate rotating portion integrally rotates the substrate and the substrate holding portion around a central axis extending in the up-down direction. The shielding portion is opposite to the upper surface of the aforementioned substrate. The shielding part operation mechanism operates the aforementioned shielding part. The processing liquid supply unit supplies the processing liquid to the aforementioned substrate. The cup portion is arranged around the substrate holding portion to receive the processing liquid. The shielding portion has a gas outflow port, and the gas outflow port is for outflow of the gas toward the inner wall surface of the cup portion.

在本發明的基板處理裝置中,前述氣體流出口較佳是位於前述遮蔽部之周緣部。 In the substrate processing apparatus of the present invention, the gas outflow port is preferably located at the peripheral edge of the shielding portion.

在本發明的基板處理裝置中,前述杯體部較佳是具有杯體上端部,前述杯體上端部係比前述基板更位於上方。前述氣體流出口較佳 是與前述杯體上端部鄰近。 In the substrate processing apparatus of the present invention, the cup portion preferably has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate. The aforementioned gas outlet is better It is adjacent to the upper end of the aforementioned cup.

在本發明的基板處理裝置中,前述遮蔽部較佳是覆蓋前述基板之上表面整體並遮蔽前述基板之上方。前述氣體流出口較佳是面向前述杯體部之內壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably covers the entire upper surface of the substrate and shields the upper side of the substrate. The gas outflow port preferably faces the inner wall surface of the cup portion.

在本發明的基板處理裝置中,前述遮蔽部較佳是具有遮蔽板,前述遮蔽板係與前述基板之上表面對向。前述遮蔽板較佳是具有對向壁面,前述對向壁面係與前述杯體部之內壁面對向。前述氣體流出口較佳是設置於前述對向壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a shielding plate, and the shielding plate is opposed to the upper surface of the substrate. Preferably, the shielding plate has an opposite wall surface, and the opposite wall surface faces the inner wall of the cup portion. The gas outflow port is preferably provided on the opposing wall surface.

在本發明的基板處理裝置中,前述遮蔽板較佳是具有:前述氣體流出口;氣體流入口,係供前述氣體流入;以及氣體流路。氣體流路較佳是使前述氣體流入口與前述氣體流出口連通。 In the substrate processing apparatus of the present invention, the shielding plate preferably has: the gas outlet; the gas inlet for the gas to flow in; and a gas flow path. The gas flow path preferably connects the gas inflow port and the gas outflow port.

在本發明的基板處理裝置中,前述杯體部之內壁面較佳是具有杯體傾斜面,前述杯體傾斜面係隨著從前述中心軸朝向徑向之外方而朝向下方傾斜。構成前述氣體流路的內表面較佳是具有流路傾斜面,前述流路傾斜面係隨著朝向前述徑向之外方而朝向下方傾斜。前述流路傾斜面之相對於水平方向的傾斜角度較佳是前述杯體傾斜面之相對於水平方向的傾斜角度以下。 In the substrate processing apparatus of the present invention, the inner wall surface of the cup portion preferably has a cup inclined surface, and the cup inclined surface is inclined downward from the central axis toward the radially outward direction. The inner surface constituting the gas flow path preferably has a flow path inclined surface, and the flow path inclined surface is inclined downward as it goes outward in the radial direction. The inclination angle of the inclined surface of the flow path with respect to the horizontal direction is preferably equal to or less than the inclination angle of the inclined surface of the cup body with respect to the horizontal direction.

在本發明的基板處理裝置中,較佳是更具有氣體供給部,前述氣體供給部係供給前述氣體。從前述氣體供給部所供給的前述氣體較佳是流入至前述氣體流入口。 In the substrate processing apparatus of the present invention, it is preferable to further include a gas supply unit, and the gas supply unit supplies the gas. The gas supplied from the gas supply unit preferably flows into the gas inflow port.

在本發明的基板處理裝置中,前述氣體流入口較佳是位於前述遮蔽板之上表面部。前述氣體流路較佳是連通前述氣體流入口與前述氣體流出口。前述氣體供給部較佳是具有風扇,前述風扇係將前述氣體送出至前述氣體流入口。前述風扇較佳是配置於前述遮蔽板之上表面 部。 In the substrate processing apparatus of the present invention, the gas inflow port is preferably located on the upper surface of the shielding plate. The gas flow path preferably communicates the gas inflow port and the gas outflow port. The gas supply unit preferably has a fan, and the fan sends the gas to the gas inlet. The aforementioned fan is preferably arranged on the upper surface of the aforementioned shielding plate unit.

在本發明的基板處理裝置中,前述遮蔽部較佳是更具有軸部,前述軸部係被固定於前述遮蔽板。前述軸部較佳是以前述中心軸為中心而與前述遮蔽板一起旋轉。前述風扇較佳是被插通於前述軸部並將已從前述遮蔽板之上方吸入的前述氣體噴出至相對於前述中心軸的徑向。 In the substrate processing apparatus of the present invention, the shielding portion preferably further has a shaft portion, and the shaft portion is fixed to the shielding plate. It is preferable that the said shaft part rotates with the said shielding board centering on the said central axis. The fan is preferably inserted into the shaft portion and blows the gas sucked from above the shielding plate in a radial direction with respect to the central axis.

在本發明的基板處理裝置中,前述氣體供給部較佳是更具有噴嘴,前述噴嘴係與前述風扇對向。前述噴嘴較佳是從前述遮蔽板之上表面側朝向前述風扇噴出前述氣體。 In the substrate processing apparatus of the present invention, the gas supply unit preferably further has a nozzle, and the nozzle is opposed to the fan. The nozzle preferably blows the gas from the upper surface side of the shielding plate toward the fan.

在本發明的基板處理裝置中,前述遮蔽部較佳是更具有軸部,前述軸部係固定於前述遮蔽板。前述軸部較佳是以前述中心軸為中心而與前述遮蔽板一起旋轉。前述遮蔽部較佳是具有孔部,前述孔部係貫通前述軸部以及前述遮蔽板並沿前述中心軸而延伸。前述處理液供給部較佳是具有流通部,前述流通部係供前述處理液流通;前述流通部較佳是配置於前述孔部。前述氣體供給部較佳是將前述氣體供給至前述流通部之外表面與構成前述孔部的壁面之間的間隙。前述氣體流入口較佳是設置於構成前述孔部的前述壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably further has a shaft portion, and the shaft portion is fixed to the shielding plate. It is preferable that the said shaft part rotates with the said shielding board centering on the said center axis|shaft. The shielding portion preferably has a hole portion, and the hole portion penetrates the shaft portion and the shielding plate and extends along the central axis. The processing liquid supply part preferably has a flow part, and the flow part is for the flow of the treatment liquid; the flow part is preferably arranged in the hole. The gas supply part preferably supplies the gas to the gap between the outer surface of the flow part and the wall surface constituting the hole part. The gas inflow port is preferably provided on the wall surface constituting the hole.

在本發明的基板處理裝置中,前述氣體供給部較佳是具有風扇過濾器單元(fan filter unit)。風扇過濾器單元較佳是配置於前述基板處理裝置之頂板部。前述風扇過濾器單元較佳是使從前述遮蔽板之上方朝向前述基板保持部的下向流(downflow)產生。 In the substrate processing apparatus of the present invention, the gas supply unit preferably has a fan filter unit. The fan filter unit is preferably arranged on the top plate of the aforementioned substrate processing apparatus. The fan filter unit preferably generates a downflow from above the shielding plate toward the substrate holding portion.

在本發明的基板處理裝置中,前述遮蔽部較佳是具有遮蔽板以及噴嘴。遮蔽板較佳是與前述基板之上表面對向。噴嘴較佳是配置於前述遮蔽板之上表面部。前述噴嘴之開口較佳為前述氣體流出口,且前 述噴嘴之開口較佳是與前述杯體部之內壁面對向。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a shielding plate and a nozzle. The shielding plate is preferably opposite to the upper surface of the aforementioned substrate. The nozzle is preferably arranged on the upper surface of the shielding plate. The opening of the aforementioned nozzle is preferably the aforementioned gas outlet, and the front The opening of the nozzle is preferably facing the inner wall of the cup body.

在本發明的基板處理裝置中,前述遮蔽部動作機構較佳是包含遮蔽部移動機構,前述遮蔽部移動機構係使前述遮蔽部上升或下降。 In the substrate processing apparatus of the present invention, it is preferable that the shielding section operating mechanism includes a shielding section moving mechanism, and the shielding section moving mechanism raises or lowers the shielding section.

在本發明的基板處理裝置中,前述遮蔽部動作機構較佳是包含遮蔽部旋轉機構,前述遮蔽部旋轉機構係使前述遮蔽部旋轉。 In the substrate processing apparatus of the present invention, it is preferable that the shielding section operating mechanism includes a shielding section rotating mechanism, and the shielding section rotating mechanism rotates the shielding section.

在本發明的基板處理裝置中,前述遮蔽部較佳是具有複數個卡合部,前述複數個卡合部係與前述基板保持部卡合。前述遮蔽部較佳是藉由前述複數個卡合部與前述基板保持部卡合而與前述基板保持部成為一體而旋轉。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a plurality of engaging portions, and the plurality of engaging portions are engaged with the substrate holding portion. It is preferable that the shielding part rotates integrally with the substrate holding part by the engagement of the plurality of engaging parts with the substrate holding part.

本發明之另一態樣的基板處理方法,係包含:保持步驟,係藉由基板保持部來保持基板;遮蔽部接近步驟,係使前述基板保持部與遮蔽部接近;旋轉步驟,係使前述基板與前述基板保持部一起旋轉;氣流產生步驟,係使氣體從前述遮蔽部之氣體流出口流出來使朝向杯體部之內壁面的氣流產生;以及處理步驟,係以處理液來處理前述基板。 A substrate processing method of another aspect of the present invention includes: a holding step of holding the substrate by a substrate holding portion; a shielding portion approaching step of bringing the substrate holding portion and the shielding portion closer to each other; and a rotating step of making the aforementioned The substrate rotates with the substrate holding portion; the air flow generation step is to make the gas flow out of the gas outlet of the shielding portion to generate the air flow toward the inner wall surface of the cup portion; and the processing step is to process the substrate with a processing liquid .

在本發明的基板處理方法中,在前述氣流產生步驟中,前述氣體較佳是從位於前述遮蔽部之周緣部的前述氣體流出口流出並沿前述杯體部之內壁面流動。 In the substrate processing method of the present invention, in the gas flow generating step, the gas preferably flows out from the gas outflow port located at the peripheral edge of the shielding portion and flows along the inner wall surface of the cup portion.

在本發明的基板處理方法中,前述杯體部較佳是具有杯體上端部,前述杯體上端部係比前述基板更位於上方。在前述氣體產生步驟中,前述氣體較佳是從與前述杯體上端部鄰近的前述氣體流出口朝向前述杯體上端部流出。 In the substrate processing method of the present invention, the cup portion preferably has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate. In the gas generating step, the gas preferably flows out from the gas outlet adjacent to the upper end of the cup toward the upper end of the cup.

依據本發明,能夠提供一種能夠有效地抑制液滴滯留於杯體部之內壁面的基板處理裝置以及基板處理方法。 According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that can effectively prevent liquid droplets from staying on the inner wall surface of the cup portion.

1,1A:基板處理裝置 1,1A: Substrate processing equipment

3:腔室 3: chamber

3a:頂板部 3a: Top plate

5,5A:基板保持部 5, 5A: Board holding part

7:基板旋轉部 7: Substrate rotating part

9:處理液供給部 9: Treatment liquid supply part

11:杯體部 11: Cup body

11a:傾斜部 11a: Inclined part

11b:側壁部 11b: side wall

15:杯體移動機構 15: Cup moving mechanism

17:排出埠口 17: discharge port

19,19A,19B:遮蔽部 19, 19A, 19B: shielding part

19a,19x:遮蔽板 19a, 19x: shielding plate

19b:軸部 19b: Shaft

19c:周緣部 19c: Peripheral part

19d:凸緣部 19d: Flange

21:遮蔽部動作機構 21: Shading part action mechanism

21a,21X:遮蔽部移動機構 21a, 21X: moving mechanism for shielding part

21b:遮蔽部旋轉機構 21b: Shading part rotation mechanism

22,35,37:氣體供給機構(氣體供給部) 22, 35, 37: Gas supply mechanism (gas supply part)

24:風扇過濾器單元(氣體供給部) 24: Fan filter unit (gas supply part)

31:風扇(氣體供給部) 31: Fan (gas supply part)

33,39:噴嘴 33, 39: nozzle

41A,41B:卡合部 41A, 41B: snap part

51:旋轉基座 51: Rotating base

53:夾緊構件 53: Clamping member

61:保持部 61: holding part

62:升降機構 62: Lifting mechanism

71:馬達 71: Motor

73:軸 73: Axis

91:處理液噴嘴(流通部) 91: Treatment liquid nozzle (circulation part)

91a:外表面 91a: outer surface

93:處理液供給機構 93: Treatment liquid supply mechanism

100:基板處理系統 100: Substrate processing system

110:內壁面 110: inner wall

111:杯體上端部 111: The upper end of the cup

113:杯體傾斜面 113: Cup body inclined surface

190:對向壁面 190: Opposite Wall

191:氣體流出口 191: Gas Outlet

192:凹部 192: Concave

193:氣體流入口 193: Gas Inlet

195:氣體流路 195: Gas flow path

196:上表面部 196: upper surface part

201:基底構件 201: base member

203:上部構件 203: Upper member

205:支柱 205: Pillar

371:氣體通路 371: Gas Path

371a:下表面噴射口 371a: lower surface jet

371b:側面噴射口 371b: Side jet

390:開口 390: open

611:保持部本體 611: Holder body

612:本體支撐部 612: body support

613:凸緣支撐部 613: Flange Support

614:支撐部連接部 614: Support part connection part

931:處理液流路 931: Treatment fluid flow path

931a:吐出口 931a: spit out

1951:內表面 1951: inner surface

1951a:流路傾斜面 1951a: Inclined surface of flow path

AD:軸向 AD: axial

AR:氣體 AR: Gas

AX:中心軸 AX: central axis

C:基板收容器 C: substrate container

CD:周方向 CD: circumferential direction

CR:搬運機器人 CR: Handling robot

RD:徑向 RD: radial

GP:間隙 GP: Gap

IR:索引機器人 IR: Index Robot

LQ:液滴 LQ: droplets

PS:授受部 PS: Grant and Acceptance Department

Sb:孔部 Sb: Hole

U1:索引單元 U1: Index unit

U2:處理單元 U2: Processing Unit

W:基板 W: substrate

Wa:上表面 Wa: upper surface

WL:壁面 WL: Wall surface

θ1,θ2:傾斜角度 θ1, θ2: tilt angle

[圖1]係顯示本發明之實施形態1的基板處理系統的示意剖視圖。 [Fig. 1] A schematic cross-sectional view showing a substrate processing system according to Embodiment 1 of the present invention.

[圖2]係顯示實施形態1的基板處理裝置的示意剖視圖。 [Fig. 2] A schematic cross-sectional view showing the substrate processing apparatus of Embodiment 1. [Fig.

[圖3]中之(a)係顯示實施形態1的基板處理裝置之遮蔽部以及杯體部的示意剖視圖,圖3中之(b)係顯示實施形態1的基板處理裝置之遮蔽部的示意俯視圖。 [Fig. 3] (a) is a schematic cross-sectional view showing the shielding portion and cup portion of the substrate processing apparatus of Embodiment 1, and Fig. 3(b) is a schematic cross-sectional view showing the shielding portion of the substrate processing apparatus of Embodiment 1 Top view.

[圖4]係放大顯示圖3中之(a)所示的遮蔽部與杯體部之一部分的示意剖視圖。 [Fig. 4] An enlarged schematic cross-sectional view showing a part of the shielding portion and the cup portion shown in (a) in Fig. 3.

[圖5]係顯示實施形態1的基板處理方法的流程圖(flowchart)。 [Fig. 5] A flow chart showing the substrate processing method of Embodiment 1. [Fig.

[圖6]中之(a)係顯示實施形態1之第一變化例的基板處理裝置之遮蔽部、杯體部以及風扇的示意剖視圖,圖6中之(b)係顯示第一變化例的基板處理裝置之遮蔽部以及風扇的示意俯視圖。 [FIG. 6] (a) is a schematic cross-sectional view showing the shielding portion, cup portion, and fan of the substrate processing apparatus of the first modification of Embodiment 1, and (b) of FIG. 6 shows the first modification A schematic plan view of the shielding part and the fan of the substrate processing apparatus.

[圖7]係顯示實施形態1之第二變化例的基板處理裝置之遮蔽部、杯體部以及氣體供給機構的示意剖視圖。 [Fig. 7] A schematic cross-sectional view showing the shielding portion, the cup portion, and the gas supply mechanism of the substrate processing apparatus according to the second modification of Embodiment 1. [Fig.

[圖8]係顯示實施形態1之第三變化例的基板處理裝置之遮蔽部、杯體部以及氣體供給機構的示意剖視圖。 [Fig. 8] A schematic cross-sectional view showing the shielding portion, the cup portion, and the gas supply mechanism of the substrate processing apparatus of the third modification of Embodiment 1. [Fig.

[圖9]係顯示實施形態1之第四變化例的基板處理裝置之遮蔽部以及杯體部的示意剖視圖。 [Fig. 9] A schematic cross-sectional view showing the shielding portion and the cup portion of the substrate processing apparatus according to the fourth modification of Embodiment 1. [Fig.

[圖10]係顯示本發明之實施形態2的基板處理裝置的示意剖視圖。 [Fig. 10] A schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 2 of the present invention.

[圖11]係顯示實施形態2的基板處理裝置之處理液供給部的示意側視圖。 Fig. 11 is a schematic side view showing the processing liquid supply part of the substrate processing apparatus of the second embodiment.

以下,一邊參照圖式一邊說明本發明的實施形態。再者,圖中,對於相同或相當部分係附記同一個參照符號而不重複說明。又,在本發明之實施形態中,X軸、Y軸以及Z軸係相互地正交,X軸以及Y軸係平行於水平方向,Z軸係平行於鉛直方向。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the figure, the same or equivalent parts are given the same reference symbols and the description is not repeated. Furthermore, in the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

[實施形態1] [Embodiment 1]

參照圖1至圖5來說明本發明之實施形態1的基板處理系統100。基板處理系統100係處理基板W。基板W例如是半導體晶圓(wafer)、液晶顯示裝置用基板、電漿顯示器(plasma display)用基板、場發射顯示器(Field Emission Display:FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩(photomask)用基板、陶瓷(ceramic)基板、或是太陽能電池用基板。基板W例如是大致圓板狀。 The substrate processing system 100 according to Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 5. The substrate processing system 100 processes the substrate W. The substrate W is, for example, a semiconductor wafer (wafer), a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, and a magnetic disk. Substrates for optical discs, substrates for photomasks, ceramic substrates, or substrates for solar cells. The substrate W is, for example, substantially disc-shaped.

首先,參照圖1來說明基板處理系統100。圖1係顯示基板處理系統100的示意俯視圖。如圖1所示,基板處理系統100係具有索引單元(indexer unit)U1以及處理單元U2。索引單元U1係包含複數個基板收容器C以及索引機器人(indexer robot)IR。處理單元U2係包含複數個基板處理裝置1、搬運機器人CR以及授受部PS。 First, the substrate processing system 100 will be described with reference to FIG. 1. FIG. 1 is a schematic top view showing a substrate processing system 100. As shown in FIG. As shown in FIG. 1, the substrate processing system 100 has an indexer unit U1 and a processing unit U2. The index unit U1 includes a plurality of substrate storage containers C and an indexer robot IR. The processing unit U2 includes a plurality of substrate processing devices 1, a transfer robot CR, and a transfer unit PS.

各個基板收容器C係將複數片基板W予以積層而收容。索引機器人IR係從複數個基板收容器C中之任一個基板收容器C取出未處理的基板W並將基板W交付給授受部PS。然後,在授受部PS係載置有已從基板收容器C取出的基板W。搬運機器人CR係從授受部PS接收未處理的基板W並將基板W搬入至複數個基板處理裝置1中之任一個基板處理裝置1。 In each substrate storage container C, a plurality of substrates W are stacked and stored. The index robot IR takes out the unprocessed substrate W from any one substrate container C among the plurality of substrate containers C and delivers the substrate W to the accepting part PS. Then, the substrate W that has been taken out from the substrate storage container C is placed on the receiving and receiving part PS. The transfer robot CR receives the unprocessed substrate W from the transfer unit PS and transfers the substrate W to any one of the plurality of substrate processing apparatuses 1.

然後,基板處理裝置1係處理未處理的基板W。基板處理裝置1是逐片處理基板W的葉片式。在實施形態中,基板處理裝置1係藉由處理液來 處理基板W。 Then, the substrate processing apparatus 1 processes the unprocessed substrate W. The substrate processing apparatus 1 is a blade type that processes substrates W one by one. In the embodiment, the substrate processing apparatus 1 uses a processing liquid to The substrate W is processed.

在進行藉由基板處理裝置1所為的處理之後,搬運機器人CR係將處理完畢的基板W從基板處理裝置1取出並將基板W交付給授受部PS。然後,在授受部PS係載置有已由基板處理裝置1所處理過的基板W。索引機器人IR係從授受部PS接收處理完畢的基板W並將基板W收容於複數個基板收容器C中之任一個基板收容器C。 After the processing by the substrate processing apparatus 1 is performed, the transfer robot CR takes the processed substrate W from the substrate processing apparatus 1 and delivers the substrate W to the transfer unit PS. Then, the substrate W that has been processed by the substrate processing apparatus 1 is placed on the transfer section PS. The index robot IR receives the processed substrate W from the accepting part PS and stores the substrate W in any one of the plurality of substrate storage containers C.

其次,參照圖2來說明基板處理裝置1。圖2係顯示基板處理裝置1的示意剖面。如圖2所示,基板處理裝置1係具有腔室(chamber)3、基板保持部5、基板旋轉部7、處理液供給部9、複數個杯體部11、複數個杯體移動機構15、排出埠口(port)17、遮蔽部19以及遮蔽部動作機構21。 Next, the substrate processing apparatus 1 will be described with reference to FIG. 2. FIG. 2 shows a schematic cross section of the substrate processing apparatus 1. As shown in FIG. 2, the substrate processing apparatus 1 has a chamber 3, a substrate holding portion 5, a substrate rotating portion 7, a processing liquid supply portion 9, a plurality of cup portions 11, and a plurality of cup moving mechanisms 15, A discharge port 17, a shielding portion 19, and a shielding portion operating mechanism 21.

腔室3係具有大致箱形狀。腔室3係具有頂板部3a。腔室3係收容基板保持部5、基板旋轉部7、處理液供給部9、複數個杯體部11、遮蔽部19以及遮蔽部動作機構21。 The chamber 3 has a substantially box shape. The chamber 3 has a top plate part 3a. The chamber 3 accommodates the substrate holding portion 5, the substrate rotating portion 7, the processing liquid supply portion 9, the plurality of cup portions 11, the shielding portion 19, and the shielding portion operating mechanism 21.

基板保持部5係將基板W水平地保持。具體而言,基板保持部5係具有旋轉基座(spin base)51以及複數個夾緊構件(chuck member)53。複數個夾緊構件53係設置於旋轉基座51。複數個夾緊構件53係將基板W保持在水平的姿勢。旋轉基座51為大致圓板狀,且將複數個夾緊構件53支撐在水平的姿勢。 The substrate holding portion 5 holds the substrate W horizontally. Specifically, the substrate holding portion 5 has a spin base 51 and a plurality of chuck members 53. A plurality of clamping members 53 are provided on the rotating base 51. The plurality of clamping members 53 hold the substrate W in a horizontal posture. The rotating base 51 has a substantially disc shape, and supports a plurality of clamping members 53 in a horizontal posture.

基板旋轉部7係以中心軸AX作為中心使基板W與基板保持部5一體地旋轉。中心軸AX係朝向基板W之上下方向延伸。具體而言,基板旋轉部7係具有馬達(motor)71以及軸(shaft)73。軸73係結合於旋轉基座51。馬達71係透過軸73且以中心軸AX為中心使旋轉基座51旋轉。結果,已由複數個夾緊構件53所保持的基板W會以中心軸AX為中心旋轉。 The substrate rotating portion 7 integrally rotates the substrate W and the substrate holding portion 5 with the center axis AX as the center. The central axis AX extends toward the upper and lower directions of the substrate W. Specifically, the substrate rotating unit 7 includes a motor 71 and a shaft 73. The shaft 73 is coupled to the rotating base 51. The motor 71 passes through the shaft 73 and rotates the rotating base 51 around the central axis AX. As a result, the substrate W that has been held by the plurality of clamping members 53 rotates around the central axis AX.

處理液供給部9係將處理液供給至基板W。只要是在能夠處理基板W的範圍內,處理液的組成係未被特別限定。例如,處理液既可為藥液又可 為沖洗液(rinse liquid)。藥液例如是聚合物(polymer)去除液或蝕刻液(etching liquid)。沖洗液例如是純水或碳酸水。具體而言,處理液供給部9係具有處理液噴嘴91以及處理液供給機構93。處理液供給機構93係連接於處理液噴嘴91且將處理液供給至處理液噴嘴91。處理液供給機構93例如具有閥(valve)以及配管。處理液係流通於處理液噴嘴91。然後,處理液噴嘴91係在基板W旋轉中朝向基板W之上表面Wa吐出處理液。處理液噴嘴91係相當於「流通部」之一例。 The processing liquid supply unit 9 supplies the processing liquid to the substrate W. The composition system of the processing liquid is not particularly limited as long as it is within the range capable of processing the substrate W. For example, the treatment liquid can be either a chemical liquid or It is rinse liquid. The chemical liquid is, for example, a polymer removal liquid or an etching liquid. The rinsing liquid is, for example, pure water or carbonated water. Specifically, the processing liquid supply unit 9 includes a processing liquid nozzle 91 and a processing liquid supply mechanism 93. The processing liquid supply mechanism 93 is connected to the processing liquid nozzle 91 and supplies the processing liquid to the processing liquid nozzle 91. The processing liquid supply mechanism 93 has, for example, a valve and a pipe. The processing liquid system circulates through the processing liquid nozzle 91. Then, the processing liquid nozzle 91 discharges the processing liquid toward the upper surface Wa of the substrate W while the substrate W is rotating. The processing liquid nozzle 91 corresponds to an example of the "circulation part".

複數個杯體部11的各個杯體部11係承接從基板W所飛散來的處理液。複數個杯體部11係配置於基板保持部5之周圍且具有相對於中心軸AX而成為旋轉對稱的形狀。例如,複數個杯體部11之各個杯體部11係具有大致圓筒形狀。 The respective cup portions 11 of the plurality of cup portions 11 receive the processing liquid scattered from the substrate W. The plurality of cup portions 11 are arranged around the substrate holding portion 5 and have a shape that is rotationally symmetric with respect to the central axis AX. For example, each of the plurality of cup portions 11 has a substantially cylindrical shape.

複數個杯體部11之各個杯體部11係在受液位置與退避位置之間進行上升或下降。受液位置係顯示杯體部11與基板W對向於徑向RD的位置。杯體部11係在位於受液位置時係承接從基板W所飛散來的處理液。徑向RD係顯示相對於中心軸AX的徑向,且與中心軸AX正交。另一方面,退避位置係顯示比受液位置更下方的位置。 Each cup part 11 of the plurality of cup parts 11 is raised or lowered between the receiving position and the retreating position. The liquid receiving position indicates the position where the cup portion 11 and the substrate W are opposed to the radial direction RD. The cup portion 11 receives the processing liquid scattered from the substrate W when it is located at the liquid receiving position. The radial direction RD indicates the radial direction with respect to the central axis AX, and is orthogonal to the central axis AX. On the other hand, the retreat position shows a position below the liquid receiving position.

具體而言,以處理液處理基板W時,至少一個杯體部11會位於受液位置。然後,基板W會與基板保持部5一體地旋轉而處理液會從處理液噴嘴91供給至基板W之上表面Wa。處理液係利用藉由基板W之旋轉所致的離心力沿基板W之上表面Wa而流動且從基板W之端緣部朝向徑向RD外方飛散。杯體部11係承接從基板W之端緣部飛散來的處理液。然後,處理液係順著杯體部11之內壁面110流下且從排出埠口17被排出。 Specifically, when the substrate W is processed with the processing liquid, at least one cup portion 11 is located at the liquid receiving position. Then, the substrate W is rotated integrally with the substrate holding portion 5, and the processing liquid is supplied from the processing liquid nozzle 91 to the upper surface Wa of the substrate W. The processing liquid flows along the upper surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W, and scatters outward from the edge of the substrate W toward the radial direction RD. The cup portion 11 receives the processing liquid scattered from the edge portion of the substrate W. Then, the treatment liquid flows down along the inner wall surface 110 of the cup portion 11 and is discharged from the discharge port 17.

複數個杯體移動機構15係分別對應於複數個杯體部11所配置。杯體移動機構15係在受液位置與退避位置之間使所對應的杯體部11進行上升或下降。杯體移動機構15例如包含電動馬達以及滾珠螺桿(ball screw)。 The plurality of cup moving mechanisms 15 are respectively arranged corresponding to the plurality of cup parts 11. The cup moving mechanism 15 raises or lowers the corresponding cup part 11 between the liquid receiving position and the retracted position. The cup moving mechanism 15 includes, for example, an electric motor and a ball screw.

遮蔽部19係相對於基板W之上表面Wa而與軸向AD對向。然後,遮蔽部19係覆蓋基板W之上表面Wa整體並遮蔽基板W之上方。軸向AD係顯示與中心軸AX平行的方向。 The shielding portion 19 is opposed to the axial direction AD with respect to the upper surface Wa of the substrate W. Then, the shielding portion 19 covers the entire upper surface Wa of the substrate W and shields the upper side of the substrate W. The axial direction AD shows the direction parallel to the central axis AX.

具體而言,遮蔽部19係具有遮蔽板19a、軸部19b以及孔部Sb。遮蔽板19a係以中心軸AX為中心而朝向徑向RD外方擴展。遮蔽板19a為大致圓板狀。遮蔽板19a係相對於基板W之上表面Wa而與軸向AD對向。然後,遮蔽板19a係覆蓋基板W之上表面Wa整體並遮蔽基板W之上方。軸部19b係固定於遮蔽板19a。軸部19b係以中心軸AX為中心而與遮蔽板19a一起旋轉。軸部19b例如是大致圓筒狀。孔部Sb係貫通軸部19b以及遮蔽板19a並沿中心軸AX而延伸。處理液噴嘴91係配置於孔部Sb。 Specifically, the shielding portion 19 has a shielding plate 19a, a shaft portion 19b, and a hole portion Sb. The shielding plate 19a expands outward in the radial direction RD with the center axis AX as the center. The shielding plate 19a has a substantially disc shape. The shielding plate 19a is opposed to the axial direction AD with respect to the upper surface Wa of the substrate W. Then, the shielding plate 19a covers the entire upper surface Wa of the substrate W and shields the upper side of the substrate W. The shaft portion 19b is fixed to the shielding plate 19a. The shaft portion 19b rotates together with the shielding plate 19a centered on the central axis AX. The shaft portion 19b has a substantially cylindrical shape, for example. The hole Sb penetrates the shaft portion 19b and the shielding plate 19a and extends along the central axis AX. The processing liquid nozzle 91 is arranged in the hole Sb.

遮蔽部動作機構21係使遮蔽部19動作。具體而言,遮蔽部動作機構21係具有遮蔽部移動機構21a以及遮蔽部旋轉機構21b。 The shielding portion operating mechanism 21 operates the shielding portion 19. Specifically, the shielding unit operating mechanism 21 includes a shielding unit moving mechanism 21a and a shielding unit rotating mechanism 21b.

遮蔽部移動機構21a係沿軸向AD使遮蔽部19上升或下降。具體而言,遮蔽部移動機構21a係在鄰近位置與退避位置之間使遮蔽部19上升或下降。鄰近位置係顯示遮蔽部19下降並隔出預定間隔地鄰近於基板W之上表面Wa的位置。在圖2中,遮蔽部19係位於鄰近位置。退避位置係在鄰近位置更上方,並顯示遮蔽部19上升而從基板W分離的位置。以處理液處理基板W時,遮蔽部移動機構21a係將遮蔽部19移動至鄰近位置。遮蔽部移動機構21a例如包含電動馬達以及滾珠螺桿。 The shielding part moving mechanism 21a raises or lowers the shielding part 19 in the axial direction AD. Specifically, the shielding part moving mechanism 21a raises or lowers the shielding part 19 between the adjacent position and the retracted position. The adjacent position is a position where the display shielding portion 19 descends and is adjacent to the upper surface Wa of the substrate W with a predetermined interval. In Fig. 2, the shielding portion 19 is located in an adjacent position. The retreat position is above the adjacent position, and the position where the shielding portion 19 rises and is separated from the substrate W is displayed. When the substrate W is processed with the processing liquid, the shielding part moving mechanism 21a moves the shielding part 19 to an adjacent position. The shield moving mechanism 21a includes, for example, an electric motor and a ball screw.

遮蔽部旋轉機構21b係以中心軸AX為中心使遮蔽部19旋轉。具體而言,遮蔽部旋轉機構21b係使遮蔽部19與基板保持部5同步旋轉。同步旋轉係表示朝向與基板保持部5相同的方向以相同的轉速旋轉。遮蔽部旋轉機構21b例如包含電動馬達。 The shielding part rotation mechanism 21b rotates the shielding part 19 centering on the central axis AX. Specifically, the shielding portion rotation mechanism 21b rotates the shielding portion 19 and the substrate holding portion 5 in synchronization. The synchronous rotation system means rotating in the same direction as the substrate holding portion 5 at the same rotation speed. The shield rotation mechanism 21b includes, for example, an electric motor.

基板處理裝置1亦可更具有氣體供給機構22以及風扇過濾器單元 24。腔室3係收容氣體供給機構22。 The substrate processing apparatus 1 may further have a gas supply mechanism 22 and a fan filter unit twenty four. The chamber 3 contains a gas supply mechanism 22.

氣體供給機構22係將氣體供給至孔部Sb。氣體例如是氮氣等的惰性氣體。氣體供給機構22例如包含閥以及配管。 The gas supply mechanism 22 supplies gas to the hole Sb. The gas is, for example, an inert gas such as nitrogen. The gas supply mechanism 22 includes, for example, a valve and a pipe.

風扇過濾器單元24係將氣體供給至腔室3之內部。具體而言,風扇過濾器單元24係配置於基板處理裝置1之頂板部3a。然後,風扇過濾器單元24係使從遮蔽板19a之上方朝向基板保持部5的下向流產生。更具體而言,風扇過濾器單元24係具有風扇以及過濾器。然後,風扇過濾器單元24係藉由風扇而取入基板處理裝置1的外部空氣且透過過濾器將外部空氣供給至腔室3之內部。外部空氣係潔淨空氣(clean air)。再者,基板處理裝置1係設置於無塵室(clean room)。風扇過濾器單元24係相當於「氣體供給部」之一例。 The fan filter unit 24 supplies gas to the inside of the chamber 3. Specifically, the fan filter unit 24 is arranged on the top plate portion 3a of the substrate processing apparatus 1. Then, the fan filter unit 24 generates a downward flow from above the shielding plate 19a toward the substrate holding portion 5. More specifically, the fan filter unit 24 has a fan and a filter. Then, the fan filter unit 24 takes in the external air of the substrate processing apparatus 1 by a fan, and supplies the external air to the inside of the chamber 3 through the filter. The outside air is clean air. Furthermore, the substrate processing apparatus 1 is installed in a clean room. The fan filter unit 24 is equivalent to an example of the "gas supply unit".

其次,參照圖3中之(a)以及圖3中之(b)來說明遮蔽部19。圖3中之(a)係顯示遮蔽部19以及杯體部11的示意剖視圖。在圖3中之(a)中,遮蔽部19係位於鄰近位置。圖3中之(b)係顯示遮蔽部19的示意俯視圖。在圖3中之(b)中係俯視觀察遮蔽部19。在本說明書中,俯視觀察係顯示從軸向AD觀察對象物。 Next, the shielding portion 19 will be described with reference to (a) in FIG. 3 and (b) in FIG. 3. (A) in FIG. 3 is a schematic cross-sectional view showing the shielding portion 19 and the cup portion 11. In (a) of FIG. 3, the shielding portion 19 is located in an adjacent position. (B) in FIG. 3 is a schematic plan view showing the shielding portion 19. In (b) of FIG. 3, the shielding portion 19 is viewed from above. In this specification, the plan view shows that the object is viewed from the axial direction AD.

如圖3中之(a)所示,遮蔽部19係具有氣體流出口191。然後,從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR。從而,在杯體部11之內壁面110中,能夠藉由氣體AR而產生從上部往下部流動的氣流。 As shown in (a) of FIG. 3, the shielding portion 19 has a gas outlet 191. Then, the gas AR toward the inner wall surface 110 of the cup portion 11 flows out from the gas outlet 191. Therefore, in the inner wall surface 110 of the cup portion 11, the airflow flowing from the upper part to the lower part can be generated by the gas AR.

結果,依據實施形態1,能夠使已附著於杯體部11之內壁面110的液滴LQ藉由氣流而滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。從而,與不設置氣體流出口191的情況相較,更能夠有效地抑制在杯體部11之內壁面110產生微粒子(particle)、以及基板W因飛濺(splashback)現象而受到污染。所謂微粒子係指因已附著於杯體部11之內壁面110的液滴LQ固化而產生的物質。所謂飛濺現象係指從基板W朝向杯體部11飛散的新處理液與由已附著於杯體部11之內壁面110的舊處理液所構成的液滴LQ 碰撞而處理液朝向基板W彈回的現象。 As a result, according to the first embodiment, the liquid droplets LQ that have adhered to the inner wall surface 110 of the cup portion 11 can be made to flow down smoothly by the air flow. In other words, it is possible to effectively prevent the droplets LQ from staying on the inner wall surface 110 of the cup portion 11. Therefore, compared with the case where the gas outlet 191 is not provided, the generation of particles on the inner wall surface 110 of the cup portion 11 and the contamination of the substrate W due to the splashback phenomenon can be more effectively suppressed. The so-called fine particles refer to substances produced by solidification of liquid droplets LQ that have adhered to the inner wall surface 110 of the cup portion 11. The so-called splash phenomenon refers to the new processing liquid scattered from the substrate W toward the cup portion 11 and the droplets LQ composed of the old processing liquid that has adhered to the inner wall surface 110 of the cup portion 11 A phenomenon in which the processing liquid bounces back toward the substrate W due to collision.

特別是在實施形態1中,氣體流出口191係位於遮蔽部19之周緣部19c。從而,從氣體流出口191所流出的氣體AR係容易朝向杯體部11之內壁面110。結果,在內壁面110中,能夠藉由氣體AR有效地產生從上部往下部流動的氣流,並能夠藉由氣流使已附著於內壁面110的液滴LQ更滑順地流下。 In particular, in the first embodiment, the gas outlet 191 is located at the peripheral edge portion 19c of the shielding portion 19. Therefore, the gas AR flowing out from the gas outlet 191 easily faces the inner wall surface 110 of the cup portion 11. As a result, in the inner wall surface 110, the gas AR can effectively generate the airflow flowing from the upper part to the lower part, and the liquid droplets LQ attached to the inner wall surface 110 can flow down more smoothly by the airflow.

此外,在實施形態1中,氣體流出口191係面向杯體部11之內壁面110。從而,在內壁面110中,能夠藉由氣體AR更有效地產生從上部往下部流動的氣流。結果,能夠藉由氣流使已附著於內壁面110的液滴LQ更滑順地流下。 In addition, in the first embodiment, the gas outlet 191 faces the inner wall surface 110 of the cup portion 11. Therefore, in the inner wall surface 110, the airflow flowing from the upper part to the lower part can be more effectively generated by the gas AR. As a result, it is possible to make the droplets LQ attached to the inner wall surface 110 flow down more smoothly by the airflow.

特別是在實施形態1中,能夠藉由遮蔽部移動機構21a以氣體流出口191面向杯體部11之內壁面110的方式輕易地配置遮蔽部19。 In particular, in the first embodiment, the shielding portion 19 can be easily arranged by the shielding portion moving mechanism 21a so that the gas outlet 191 faces the inner wall surface 110 of the cup portion 11.

又,在實施形態1中,遮蔽部19係以中心軸AX為中心藉由遮蔽部旋轉機構21b進行旋轉。從而,能夠藉由遮蔽部19之旋轉而有效地產生從氣體流出口191所流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。 Moreover, in Embodiment 1, the shielding part 19 is rotated by the shielding part rotation mechanism 21b centering on the central axis AX. Therefore, the airflow of the gas AR flowing out from the gas outlet 191 can be efficiently generated by the rotation of the shielding portion 19. As a result, the gas AR can make the liquid droplets LQ attached to the inner wall surface 110 of the cup portion 11 flow down more smoothly.

如圖3中之(a)以及圖3中之(b)所示,遮蔽部19之遮蔽板19a係具有基底構件201、上部構件203以及複數個支柱205。再者,在圖3中之(a)係未顯示有支柱205。 As shown in (a) in FIG. 3 and (b) in FIG. 3, the shielding plate 19 a of the shielding portion 19 has a base member 201, an upper member 203 and a plurality of pillars 205. Furthermore, the pillar 205 is not shown in (a) of FIG. 3.

基底構件201與上部構件203係於軸向AD隔出間隔地對向。複數個支柱205之各個支柱205係從基底構件201朝向上方突出。複數個支柱205係沿相對於中心軸AX的周方向CD配置於基底構件201。複數個支柱205係支撐上部構件203。換句話說,複數個支柱205係結合著基底構件201與上部構件203。在實施形態1中,在俯視觀察下,基底構件201為大致圓板狀,上部構件203為大致圓帶狀。 The base member 201 and the upper member 203 are opposed to each other with an interval in the axial direction AD. Each pillar 205 of the plurality of pillars 205 protrudes upward from the base member 201. The plurality of pillars 205 are arranged on the base member 201 along the circumferential direction CD with respect to the center axis AX. A plurality of pillars 205 support the upper member 203. In other words, a plurality of pillars 205 connect the base member 201 and the upper member 203 together. In Embodiment 1, in a plan view, the base member 201 has a substantially disc shape, and the upper member 203 has a substantially circular belt shape.

遮蔽板19a係具有氣體流出口191、氣體流入口193以及氣體流路195。在實施形態1中,氣體流出口191以及氣體流入口193之各個係在俯視觀察下呈大致圓環狀。氣體流入口193係位於遮蔽板19a之上表面部196。在氣體流入口193係流入有氣體。例如氣體是藉由遮蔽板19a之旋轉而從氣體流入口193流入。 The shielding plate 19a has a gas outlet 191, a gas inlet 193, and a gas flow path 195. In the first embodiment, each of the gas outlet 191 and the gas inlet 193 has a substantially annular shape in a plan view. The gas inlet 193 is located on the upper surface portion 196 of the shielding plate 19a. Gas flows into the gas inlet 193. For example, the gas flows in from the gas inlet 193 by the rotation of the shielding plate 19a.

例如,風扇過濾器單元24(圖2)係將氣體供給至氣體流入口193。從而,從風扇過濾器單元24所供給的氣體會流入至氣體流入口193。換句話說,即便藉由風扇過濾器單元24所產生的下向流仍能夠產生從氣體流出口191所流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。 For example, the fan filter unit 24 (FIG. 2) supplies gas to the gas inlet 193. Therefore, the gas supplied from the fan filter unit 24 flows into the gas inflow port 193. In other words, even the downward flow generated by the fan filter unit 24 can still generate the air flow of the air AR flowing out from the air outlet 191. As a result, the gas AR can make the liquid droplets LQ attached to the inner wall surface 110 of the cup portion 11 flow down more smoothly.

氣體流路195係藉由基底構件201與上部構件203之間的空間所形成。氣體流路195係使氣體流入口193與氣體流出口191連通。從而,依據實施形態1,能夠從氣體流入口193取入氣體並將氣體流動至氣體流路195,且使氣體AR從氣體流出口191朝向杯體部11之內壁面110流出。 The gas flow path 195 is formed by the space between the base member 201 and the upper member 203. The gas flow path 195 connects the gas inflow port 193 and the gas outflow port 191. Therefore, according to the first embodiment, it is possible to take in gas from the gas inlet 193 and flow the gas to the gas flow path 195, and to make the gas AR flow out from the gas outlet 191 toward the inner wall surface 110 of the cup portion 11.

特別是在實施形態1中,氣體流出口191係遍及於徑向RD之全方位朝向中心軸AX之外方開口。從而,能夠對杯體部11之內壁面110朝向周方向CD均等地噴吹氣體AR。結果,能夠藉由氣體AR使已附著於內壁面110的液滴LQ更滑順地流下。 In particular, in the first embodiment, the gas outlet 191 is opened to the outside of the central axis AX in all directions in the radial direction RD. Therefore, the gas AR can be blown uniformly to the inner wall surface 110 of the cup portion 11 in the circumferential direction CD. As a result, the gas AR can make the liquid droplets LQ attached to the inner wall surface 110 flow down more smoothly.

其次,參照圖4來詳細說明遮蔽部19。圖4係放大顯示圖3中之(a)所示的遮蔽部19與杯體部11之一部分的示意剖視圖。如圖4所示,遮蔽部19之遮蔽板19a係具有對向壁面190。對向壁面190係與杯體部11之內壁面110對向於徑向RD。對向壁面190為周緣部19c之表面。氣體流出口191係設置於對向壁面190。從而,依據實施形態1,從氣體流出口191流出的氣體AR係容易朝向杯體部11之內壁面110且能夠藉由氣體AR使液滴LQ更滑順地流下。 Next, the shielding portion 19 will be described in detail with reference to FIG. 4. 4 is an enlarged schematic cross-sectional view showing a part of the shielding portion 19 and the cup portion 11 shown in (a) of FIG. 3. As shown in FIG. 4, the shielding plate 19 a of the shielding portion 19 has an opposing wall surface 190. The opposed wall surface 190 is opposed to the inner wall surface 110 of the cup portion 11 in the radial direction RD. The facing wall surface 190 is the surface of the peripheral edge portion 19c. The gas outlet 191 is provided on the opposite wall 190. Therefore, according to the first embodiment, the gas AR flowing out from the gas outlet 191 is easily directed toward the inner wall surface 110 of the cup portion 11 and the liquid droplet LQ can be smoothly flowed down by the gas AR.

又,構成遮蔽板19a之氣體流路195的內表面1951係具有流路傾斜面1951a。流路傾斜面1951a係隨著朝向徑向RD之外方而朝向下方傾斜。 In addition, the inner surface 1951 of the gas flow path 195 constituting the shielding plate 19a has a flow path inclined surface 1951a. The flow path inclined surface 1951a is inclined downward as it goes outward in the radial direction RD.

另一方面,杯體部11係具有傾斜部11a以及側壁部11b。傾斜部11a係相對於側壁部11b而朝向上方傾斜於中心軸AX此側。傾斜部11a係具有上下呈開口的中空之大致圓錐台形狀。側壁部11b係沿中心軸AX而延伸。側壁部11b係具有大致圓筒形狀。 On the other hand, the cup portion 11 has an inclined portion 11a and a side wall portion 11b. The inclined portion 11a is inclined upward on the side of the central axis AX with respect to the side wall portion 11b. The inclined portion 11a has a substantially truncated cone shape with a hollow opening up and down. The side wall portion 11b extends along the central axis AX. The side wall portion 11b has a substantially cylindrical shape.

杯體部11係具有杯體上端部111。杯體上端部111為傾斜部11a之上端部。杯體上端部111係比基板W更位於上方。然後,氣體流出口191係隔出間隔地與杯體上端部111鄰近。從而,依據實施形態1,在內壁面110中,能夠藉由氣體AR而產生從上部往下部流動之較強的氣流。結果,能夠藉由氣流使液滴LQ更滑順地流下。 The cup body 11 has a cup upper end 111. The upper end 111 of the cup body is the upper end of the inclined portion 11a. The upper end 111 of the cup body is located above the substrate W. Then, the gas outlet 191 is adjacent to the upper end 111 of the cup body at intervals. Therefore, according to the first embodiment, in the inner wall surface 110, a strong airflow flowing from the upper part to the lower part can be generated by the gas AR. As a result, it is possible to make the droplet LQ flow down more smoothly by the air flow.

又,杯體部11之內壁面110係具有杯體傾斜面113。杯體傾斜面113為杯體部11之內壁面110當中傾斜部11a之內壁面。杯體傾斜面113係隨著從中心軸AX朝向徑向RD之外方而朝向下方傾斜。 In addition, the inner wall surface 110 of the cup portion 11 has a cup inclined surface 113. The cup inclined surface 113 is the inner wall surface of the inclined portion 11 a of the inner wall surface 110 of the cup portion 11. The cup inclined surface 113 is inclined downward from the center axis AX toward the outside of the radial direction RD.

然後,遮蔽部19a之流路傾斜面1951a相對於水平方向的傾斜角度θ1為杯體部11之杯體傾斜面113相對於水平方向的傾斜角度θ2以下。從而,依據實施形態1,沿流路傾斜面1951a而流出的氣體AR可有效地噴吹至杯體傾斜面113,並有效地產生從杯體傾斜面113朝向下方的氣流。結果,能夠藉由氣流使液滴LQ更滑順地流下。 Then, the inclination angle θ1 of the flow path inclined surface 1951a of the shielding portion 19a with respect to the horizontal direction is equal to or less than the inclination angle θ2 of the cup inclined surface 113 of the cup portion 11 with respect to the horizontal direction. Therefore, according to the first embodiment, the gas AR flowing out along the inclined surface 1951a of the flow path can be effectively blown to the inclined surface 113 of the cup, and the airflow from the inclined surface 113 of the cup can be effectively generated downward. As a result, it is possible to make the droplet LQ flow down more smoothly by the air flow.

其次,參照圖2以及圖5來說明實施形態1的基板處理方法。基板處理方法能藉由基板處理裝置1來執行。圖5係顯示實施形態1的基板處理方法的流程圖。如圖5所示,基板處理方法係包含步驟S1至步驟S5。 Next, the substrate processing method of Embodiment 1 will be described with reference to FIGS. 2 and 5. The substrate processing method can be executed by the substrate processing apparatus 1. Fig. 5 is a flowchart showing the substrate processing method of the first embodiment. As shown in FIG. 5, the substrate processing method includes steps S1 to S5.

如圖2以及圖5所示,在步驟S1中,基板處理裝置1係藉由基板保持部5來保持基板W。步驟S1係相當於「保持步驟」之一例。 As shown in FIGS. 2 and 5, in step S1, the substrate processing apparatus 1 holds the substrate W by the substrate holding portion 5. Step S1 is equivalent to an example of "holding step".

在步驟S2中,基板處理裝置1係使基板保持部5與遮蔽部19接近。步驟S2係相當於「遮蔽部接近步驟」之一例。 In step S2, the substrate processing apparatus 1 brings the substrate holding portion 5 and the shielding portion 19 close to each other. Step S2 is equivalent to an example of "a step of approaching a shielding part".

在步驟S3中,基板處理裝置1係使基板W與基板保持部5一起旋轉。步驟S3係相當於「旋轉步驟」之一例。 In step S3, the substrate processing apparatus 1 rotates the substrate W together with the substrate holding portion 5. Step S3 is equivalent to an example of the "rotating step".

在步驟S4中,基板處理裝置1係使氣體從遮蔽部19之氣體流出口191流出並使朝向杯體部11之內壁面110的氣流產生。步驟S5係相當於「氣流產生步驟」之一例。 In step S4, the substrate processing apparatus 1 causes the gas to flow out from the gas outlet 191 of the shielding portion 19 and generates a gas flow toward the inner wall surface 110 of the cup portion 11. Step S5 is equivalent to an example of "air flow generation step".

在步驟S5中,基板處理裝置1係以處理液來處理基板W。步驟S5係相當於「處理步驟」之一例。 In step S5, the substrate processing apparatus 1 processes the substrate W with a processing liquid. Step S5 is equivalent to an example of "processing step".

以上,如已參照圖2以及圖5所說明的,依據實施形態1的基板處理方法,在步驟S4中基於來自氣體流出口191之氣體AR而產生的氣流會從內壁面110之上部朝向下部並沿內壁面110流動。從而,能夠使已附著於杯體部11之內壁面110的液滴LQ滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。 As described above with reference to FIGS. 2 and 5, according to the substrate processing method of Embodiment 1, in step S4, the gas flow generated based on the gas AR from the gas outlet 191 flows from the upper portion of the inner wall surface 110 toward the lower portion. It flows along the inner wall surface 110. Therefore, the droplets LQ that have adhered to the inner wall surface 110 of the cup portion 11 can be smoothly flowed down. In other words, it is possible to effectively prevent the droplets LQ from staying on the inner wall surface 110 of the cup portion 11.

特別是在實施形態1中,在步驟S4中,氣體AR係從位於遮蔽部19之周緣部19c的氣體流出口191流出並沿杯體部11之內壁面110流動。具體而言,在步驟S4中,氣體AR係從與杯體上端部111鄰近的氣體流出口191朝向杯體上端部111流出。從而,能夠藉由基於氣體AR而產生的氣流使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。 Particularly in the first embodiment, in step S4, the gas AR flows out from the gas outlet 191 located at the peripheral edge portion 19c of the shielding portion 19 and flows along the inner wall surface 110 of the cup portion 11. Specifically, in step S4, the gas AR flows out from the gas outlet 191 adjacent to the upper end 111 of the cup toward the upper end 111 of the cup. Therefore, the liquid droplets LQ that have adhered to the inner wall surface 110 of the cup portion 11 can flow down more smoothly by the airflow generated by the gas AR.

又,在實施形態1中係與在步驟S5中將處理液供給至基板W並行,可從氣體流出口191流出氣體AR。從而,能夠有效地藉由基於氣體AR而產生的氣流使基板W之處理中因飛散之處理液所引起的液滴LQ沿杯體部11之內壁面110流下。 In addition, in the first embodiment, in parallel with the supply of the processing liquid to the substrate W in step S5, the gas AR can flow out from the gas outlet 191. Therefore, the liquid droplets LQ caused by the scattered processing liquid during the processing of the substrate W can be effectively caused to flow down the inner wall surface 110 of the cup portion 11 by the airflow generated by the gas AR.

再者,只要步驟S4能在步驟S5之前段被執行,則步驟S2至 步驟S4之執行順序既可被適當變更,步驟S2至步驟S4當中之一部分或全部的步驟亦可被並行執行。 Furthermore, as long as step S4 can be executed before step S5, steps S2 to The execution order of step S4 can be appropriately changed, and some or all of the steps from step S2 to step S4 can also be executed in parallel.

[第一變化例] [First modification example]

參照圖6中之(a)以及圖6中之(b)來說明實施形態1之第一變化例的基板處理裝置1。第一變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:基板處理裝置1具有氣流產生用的風扇31。以下,主要說明第一變化例與實施形態1的不同點。 The substrate processing apparatus 1 of the first modification of Embodiment 1 will be described with reference to (a) in FIG. 6 and (b) in FIG. 6. The main difference between the first modification example and the first embodiment described with reference to FIGS. 1 to 5 is that the substrate processing apparatus 1 has a fan 31 for generating airflow. Hereinafter, the difference between the first modification example and the first embodiment will be mainly explained.

圖6中之(a)係顯示第一變化例的基板處理裝置1之遮蔽部19、杯體部11以及風扇31的示意剖視圖。在圖6中之(a)中,遮蔽部19係位於鄰近位置。圖6中之(b)係顯示第一變化例的基板處理裝置1之遮蔽部19以及風扇31的示意俯視圖。在圖6中之(b)中係俯視觀察遮蔽部19以及風扇31。 (A) in FIG. 6 is a schematic cross-sectional view showing the shielding portion 19, the cup portion 11, and the fan 31 of the substrate processing apparatus 1 of the first modification. In Fig. 6(a), the shielding portion 19 is located in an adjacent position. (B) of FIG. 6 is a schematic plan view showing the shielding portion 19 and the fan 31 of the substrate processing apparatus 1 of the first modification. In (b) of FIG. 6, the shielding portion 19 and the fan 31 are seen in a plan view.

如圖6中之(a)以及圖6中之(b)所示,基板處理裝置1係除了圖2所示的基板處理裝置1之構成以外還更具有風扇31。風扇31係配置於遮蔽部19的遮蔽板19a之上表面部196。風扇31係將氣體供給至氣體流入口193。從而,從風扇31所供給的氣體會流入至氣體流入口193。結果,依據第一變化例,與不設置風扇31的情況相較,更能夠藉由從氣體流出口191所流出的氣體AR而產生較強的氣流,並能夠藉由氣流使杯體部11之內壁面110的液滴LQ更滑順地流下。風扇31係相當於「氣體供給部」之一例。 As shown in Fig. 6(a) and Fig. 6(b), the substrate processing apparatus 1 has a fan 31 in addition to the structure of the substrate processing apparatus 1 shown in Fig. 2. The fan 31 is arranged on the upper surface portion 196 of the shielding plate 19 a of the shielding portion 19. The fan 31 supplies gas to the gas inlet 193. Therefore, the gas supplied from the fan 31 flows into the gas inlet 193. As a result, according to the first modified example, compared with the case where the fan 31 is not provided, a stronger air flow can be generated by the gas AR flowing out from the gas outlet 191, and the cup body 11 can be The droplets LQ on the inner wall surface 110 flow down more smoothly. The fan 31 corresponds to an example of the "gas supply unit".

特別是在第一變化例中,遮蔽板19a係更具有凹部192。凹部192係形成於遮蔽板19a之上表面部196。風扇31係配置於凹部192。然後,風扇31係將氣體送出至位於遮蔽板19a之上表面部196的氣體流入口193。具體而言,風扇31係將氣體送出至位於遮蔽板19a之凹部192的氣體流入口193。 Especially in the first modification example, the shielding plate 19a further has a recess 192. The recessed part 192 is formed in the upper surface part 196 of the shielding board 19a. The fan 31 is arranged in the recess 192. Then, the fan 31 sends the gas to the gas inlet 193 located on the upper surface portion 196 of the shielding plate 19a. Specifically, the fan 31 sends out the gas to the gas inlet 193 located in the recess 192 of the shielding plate 19a.

更具體而言,風扇31係被插通於軸部19b以將從遮蔽板19a之上方所吸入的氣體對著相對於中心軸AX的徑向RD噴出。從而,依據第一變化例,能夠將比較強之氣流的氣體流入至氣體流入口193,並能夠從氣體流出口191噴出比較強之氣流的氣體AR。結果,在內壁面110中,能夠藉由氣體AR而產生從上部往下部流動之比較強的氣流,並能夠使內壁面110之液滴LQ更滑順地流下。風扇31例如是西洛克風扇(Sirocco fan)。 More specifically, the fan 31 is inserted into the shaft portion 19b so as to blow the air sucked from above the shielding plate 19a toward the radial direction RD with respect to the central axis AX. Therefore, according to the first modification example, gas with a relatively strong gas flow can be flowed into the gas inlet 193, and gas AR with a relatively strong gas flow can be ejected from the gas outlet 191. As a result, in the inner wall surface 110, the gas AR can generate a relatively strong air current flowing from the upper part to the lower part, and the liquid droplets LQ on the inner wall surface 110 can flow down more smoothly. The fan 31 is, for example, a Sirocco fan.

[第二變化例] [Second modification example]

參照圖7來說明實施形態1之第二變化例的基板處理裝置1。第二變化例與第一變化例的主要不同點係在於:基板處理裝置1具有用以產生氣流的噴嘴33。以下,主要說明第二變化例與第一變化例的不同點。 The substrate processing apparatus 1 according to the second modification of the first embodiment will be described with reference to FIG. 7. The main difference between the second modification and the first modification is that the substrate processing apparatus 1 has a nozzle 33 for generating airflow. Hereinafter, the difference between the second modification example and the first modification example will be mainly explained.

圖7係顯示第二變化例的基板處理裝置1之遮蔽部19、杯體部11以及氣體供給機構35的示意剖視圖。在圖7中,遮蔽部19係位於鄰近位置。如圖7所示,基板處理裝置1係除了圖2所示的基板處理裝置1之構成以外還更具有氣體供給機構35。氣體供給機構35係將氣體供給至氣體流入口193。然後,從氣體供給機構35所供給的氣體會流入至氣體流入口193。氣體供給機構35係相當於「氣體供給部」之一例。 FIG. 7 is a schematic cross-sectional view showing the shielding portion 19, the cup portion 11, and the gas supply mechanism 35 of the substrate processing apparatus 1 of the second modification. In Fig. 7, the shielding portion 19 is located in an adjacent position. As shown in FIG. 7, the substrate processing apparatus 1 has a gas supply mechanism 35 in addition to the structure of the substrate processing apparatus 1 shown in FIG. 2. The gas supply mechanism 35 supplies gas to the gas inlet 193. Then, the gas supplied from the gas supply mechanism 35 flows into the gas inflow port 193. The gas supply mechanism 35 corresponds to an example of the "gas supply unit".

具體而言,氣體供給機構35係具有風扇31以及噴嘴33。風扇31係與第一變化例的風扇31同樣。噴嘴33係相對於風扇31而與軸向AD對向。噴嘴33係從遮蔽板19a之上表面側朝向風扇31噴出氣體。更且,風扇31係將來自噴嘴33的氣體送出至氣體流入口193。從而,與不設置噴嘴33的情況相較,更能夠將較強之氣流的氣體流入至氣體流入口193,並能夠從氣體流出口191噴出較強之氣流的氣體AR。結果,在內壁面110中,能夠藉由氣體AR 而產生從上部往下部流動之較強的氣流,並能夠使內壁面110之液滴LQ更滑順地流下。再者,在第二變化例中,噴嘴33係將氮氣等的惰性氣體朝向風扇31噴出。 Specifically, the gas supply mechanism 35 has a fan 31 and a nozzle 33. The fan 31 is the same as the fan 31 of the first modification. The nozzle 33 is opposed to the axial direction AD with respect to the fan 31. The nozzle 33 ejects gas toward the fan 31 from the upper surface side of the shielding plate 19a. Furthermore, the fan 31 sends out the gas from the nozzle 33 to the gas inlet 193. Therefore, compared with the case where the nozzle 33 is not provided, it is possible to inject gas with a stronger gas flow into the gas inlet 193 and to eject the gas AR with a stronger gas flow from the gas outlet 191. As a result, in the inner wall surface 110, the gas AR can be A stronger air flow is generated from the upper part to the lower part, and the liquid droplets LQ on the inner wall surface 110 can flow down more smoothly. Furthermore, in the second modification example, the nozzle 33 blows an inert gas such as nitrogen toward the fan 31.

[第三變化例] [Third Variation Example]

參照圖8來說明實施形態1之第三變化例的基板處理裝置1。在基板處理裝置1中,第三變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:氣體流入口193係位於遮蔽部19之孔部Sb。以下,主要說明第三變化例與實施形態1的不同點。 The substrate processing apparatus 1 according to the third modification of the first embodiment will be described with reference to FIG. 8. In the substrate processing apparatus 1, the main difference between the third modification example and the first embodiment described with reference to FIGS. 1 to 5 is that the gas inflow port 193 is located in the hole Sb of the shielding portion 19. Hereinafter, the difference between the third modification example and the first embodiment will be mainly explained.

圖8係顯示第三變化例的基板處理裝置1之遮蔽部19、杯體部11以及氣體供給機構22的示意剖視圖。在圖8中,遮蔽部19係位於鄰近位置。如圖8所示,氣體供給機構22係將氣體供給至氣體流入口193。然後,從氣體供給機構22所供給的氣體會流入至氣體流入口193。氣體供給機構22係相當於「氣體供給部」之一例。 FIG. 8 is a schematic cross-sectional view showing the shielding portion 19, the cup portion 11, and the gas supply mechanism 22 of the substrate processing apparatus 1 of the third modification. In Fig. 8, the shielding portion 19 is located in an adjacent position. As shown in FIG. 8, the gas supply mechanism 22 supplies gas to the gas inlet 193. Then, the gas supplied from the gas supply mechanism 22 flows into the gas inflow port 193. The gas supply mechanism 22 is equivalent to an example of the "gas supply unit".

具體而言,氣體供給機構22係將氣體供給至處理液噴嘴91的外表面91a與構成孔部Sb的壁面WL之間的間隙GP。氣體係在以處理液來處理基板W之前朝向基板W供給並將基板W之上方空間形成為預定的氛圍(atmosphere)。又,在基板W之上方空間成為預定之氛圍之後,氣體會被充填於間隙GP。在第三變化例中,氣體流入口193係設置於構成孔部Sb的壁面WL。從而,氣體供給機構22已供給的氣體也會流入至氣體流入口193。然後,氣體流入口193係藉由氣體流路195來與氣體流出口191連通。從而,能夠將已供給至間隙GP的氣體從氣體流入口193取入並使氣體流動至氣體流路195,且使氣體AR從氣體流出口191朝向杯體部11之內壁面110流出。結果,在內壁面110中能夠藉由氣體AR而產生從上部往下部流動的氣體,並能夠藉 由氣流使已附著於內壁面110的液滴LQ滑順地流下。 Specifically, the gas supply mechanism 22 supplies gas to the gap GP between the outer surface 91a of the processing liquid nozzle 91 and the wall surface WL constituting the hole Sb. The gas system is supplied to the substrate W before the substrate W is processed with the processing liquid, and the space above the substrate W is formed into a predetermined atmosphere. In addition, after the space above the substrate W becomes a predetermined atmosphere, the gas is filled in the gap GP. In the third modification example, the gas inflow port 193 is provided on the wall surface WL constituting the hole Sb. Therefore, the gas supplied by the gas supply mechanism 22 also flows into the gas inlet 193. Then, the gas inlet 193 communicates with the gas outlet 191 through the gas flow path 195. Therefore, the gas supplied to the gap GP can be taken in from the gas inlet 193 and the gas can be flowed to the gas flow path 195, and the gas AR can be flowed out from the gas outlet 191 toward the inner wall surface 110 of the cup portion 11. As a result, the gas AR can generate gas flowing from the upper part to the lower part in the inner wall surface 110, and can borrow The air flow causes the droplets LQ that have adhered to the inner wall surface 110 to flow down smoothly.

特別是在第三變化例中,藉由氣體供給機構22將氣體供給至氣體流入口193。換句話說,沿用供給至基板W的氣體或被充填於間隙GP的氣體來將氣體取入至氣體流入口193。從而,亦可不設置用以將氣體供給至氣體流入口193之專用的氣體供給機構,而能夠減低基板處理裝置1的製造成本。 In particular, in the third modification example, the gas is supplied to the gas inlet 193 by the gas supply mechanism 22. In other words, the gas supplied to the substrate W or the gas filled in the gap GP is used to take the gas into the gas inlet 193. Therefore, a dedicated gas supply mechanism for supplying gas to the gas inflow port 193 may not be provided, and the manufacturing cost of the substrate processing apparatus 1 can be reduced.

[第四變化例] [Fourth modification example]

參照圖9來說明實施形態1之第四變化例的基板處理裝置1。在基板處理裝置1中,第四變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:噴嘴39之開口為氣體流出口191。以下,主要說明第四變化例與實施形態1的不同點。 The substrate processing apparatus 1 according to the fourth modification of the first embodiment will be described with reference to FIG. 9. In the substrate processing apparatus 1, the main difference between the fourth modification example and the first embodiment described with reference to FIGS. 1 to 5 is that the opening of the nozzle 39 is a gas outlet 191. Hereinafter, the difference between the fourth modification example and the first embodiment will be mainly explained.

圖9係顯示第四變化例的基板處理裝置1之遮蔽部19A以及杯體部11的示意剖視圖。在圖9中,遮蔽部19A係位於鄰近位置。如圖9所示,基板處理裝置1係具有遮蔽部19A來取代圖2所示的基板處理裝置1之遮蔽部19。遮蔽部19A係具有遮蔽板19x、軸部19b以及噴嘴39。遮蔽板19x係具有與圖4所示之遮蔽板19a同樣的構成。但是,遮蔽板19x係不具有圖4所顯示的氣體流出口191、氣體流入口193以及氣體流路195。遮蔽板19x為大致圓板狀。 FIG. 9 is a schematic cross-sectional view showing the shielding portion 19A and the cup portion 11 of the substrate processing apparatus 1 of the fourth modification. In FIG. 9, the shielding portion 19A is located in an adjacent position. As shown in FIG. 9, the substrate processing apparatus 1 has a shielding part 19A instead of the shielding part 19 of the substrate processing apparatus 1 shown in FIG. 2. The shielding portion 19A has a shielding plate 19x, a shaft portion 19b, and a nozzle 39. The shielding plate 19x has the same structure as the shielding plate 19a shown in FIG. 4. However, the shielding plate 19x does not have the gas outlet 191, the gas inlet 193, and the gas flow path 195 shown in FIG. 4. The shielding plate 19x has a substantially disc shape.

噴嘴39係配置於遮蔽板19x之上表面部196。然後,噴嘴39之開口390為氣體流出口191且與杯體部11之內壁面110對向。從而,噴嘴39係朝向內壁面110噴出氣體AR。在第四變化例中,噴嘴39係將氮氣等的惰性氣體朝向內壁面110噴出。 The nozzle 39 is arranged on the upper surface portion 196 of the shielding plate 19x. Then, the opening 390 of the nozzle 39 is a gas outlet 191 and is opposite to the inner wall surface 110 of the cup portion 11. Therefore, the nozzle 39 ejects the gas AR toward the inner wall surface 110. In the fourth modification example, the nozzle 39 ejects an inert gas such as nitrogen toward the inner wall surface 110.

依據第四變化例,能夠藉由噴嘴39將較強之氣流的氣體AR朝向內壁面110噴出。從而,在內壁面110中,能夠藉由氣體AR而產生從上部 往下部流動之較強的氣流。結果,能夠使內壁面110之液滴LQ滑順地流下。又,有關第四變化例之圖9,更有效的是噴嘴39也藉由上表面部196之遮蔽板19x旋轉而進行旋轉。上表面部196以及噴嘴39更佳是同一個構造體。 According to the fourth modification example, the gas AR with a stronger airflow can be ejected toward the inner wall surface 110 through the nozzle 39. Therefore, in the inner wall surface 110, the gas AR can generate Stronger air flow to the lower part. As a result, the droplets LQ on the inner wall surface 110 can be smoothly flowed down. In addition, regarding FIG. 9 of the fourth modification, it is more effective that the nozzle 39 is also rotated by the rotation of the shielding plate 19x of the upper surface portion 196. The upper surface portion 196 and the nozzle 39 are more preferably the same structure.

[實施形態2] [Embodiment 2]

參照圖10以及圖11來說明本發明之實施形態2的基板處理裝置1A。實施形態2與實施形態1的主要不同點係在於:基板處理裝置1A係藉由基板旋轉部7使遮蔽部19B旋轉。以下,主要說明實施形態2與實施形態1的不同點。 The substrate processing apparatus 1A according to Embodiment 2 of the present invention will be described with reference to FIGS. 10 and 11. The main difference between the second embodiment and the first embodiment is that the substrate processing apparatus 1A rotates the shielding portion 19B by the substrate rotating portion 7. Hereinafter, the difference between the second embodiment and the first embodiment will be mainly described.

圖10係顯示實施形態2的基板處理裝置1A的示意剖視圖。如圖10所示,基板處理裝置1A係具備氣體供給機構37來取代圖2所示的基板處理裝置1之氣體供給機構22。有關氣體供給機構37將於後述。 Fig. 10 is a schematic cross-sectional view showing a substrate processing apparatus 1A according to the second embodiment. As shown in FIG. 10, the substrate processing apparatus 1A includes a gas supply mechanism 37 instead of the gas supply mechanism 22 of the substrate processing apparatus 1 shown in FIG. 2. The gas supply mechanism 37 will be described later.

基板處理裝置1A之基板保持部5A係除了圖2所示的基板保持部5之構成以外還更具有複數個卡合部41B。複數個卡合部41B係以中心軸AX為中心並以大致等角度間隔朝向周方向CD配置於旋轉基座51之上表面的外周部。複數個卡合部41B係比複數個夾緊構件53更配置於徑向RD之外方。複數個卡合部41B之各個卡合部41B係從旋轉基座51之上表面朝向上方突出成大致垂直。 The substrate holding portion 5A of the substrate processing apparatus 1A has a plurality of engaging portions 41B in addition to the structure of the substrate holding portion 5 shown in FIG. 2. The plurality of engaging portions 41B are arranged on the outer peripheral portion of the upper surface of the rotating base 51 with the center axis AX as the center and at substantially equal angular intervals toward the circumferential direction CD. The plurality of engaging portions 41B are arranged outside of the radial direction RD than the plurality of clamping members 53. Each of the engaging portions 41B of the plurality of engaging portions 41B protrudes upward from the upper surface of the rotating base 51 to be substantially perpendicular.

基板處理裝置1A之遮蔽部19B係具有與實施形態1之遮蔽部19(圖4)同樣的氣體流出口191。從而,依據實施形態2,能夠與實施形態1同樣地使已附著於杯體部11之內壁面110的液滴LQ藉由氣流而滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。其他,在實施形態2中係具有與實施形態1同樣的功效。 The shielding portion 19B of the substrate processing apparatus 1A has the same gas outlet 191 as the shielding portion 19 (FIG. 4) of the first embodiment. Therefore, according to the second embodiment, the liquid droplets LQ attached to the inner wall surface 110 of the cup portion 11 can be made to flow down smoothly by the air flow, similarly to the first embodiment. In other words, it is possible to effectively prevent the droplets LQ from staying on the inner wall surface 110 of the cup portion 11. Otherwise, the second embodiment has the same effect as the first embodiment.

又,遮蔽部19B係除了圖2所示的遮蔽部19之構成以外還更具有複數個卡合部41A以及凸緣(flange)部19d。 In addition, the shielding portion 19B has a plurality of engaging portions 41A and flange portions 19d in addition to the structure of the shielding portion 19 shown in FIG. 2.

複數個卡合部41A係以中心軸AX作為中心並以大致等角度間隔朝向周方向CD配置於遮蔽板19a之下表面的外周部。複數個卡合部41A係分別與複數個卡合部41B對向於軸向AD。複數個卡合部41A之各個卡合部41A係從遮蔽板19a之下表面朝向下方突出成大致垂直。複數個卡合部41A之各個卡合部41A係具有朝向上方凹陷的凹部(未圖示)。 The plurality of engagement portions 41A are arranged on the outer peripheral portion of the lower surface of the shielding plate 19a with the center axis AX as the center and at substantially equal angular intervals toward the circumferential direction CD. The plurality of engaging portions 41A respectively oppose the plurality of engaging portions 41B in the axial direction AD. Each of the engaging portions 41A of the plurality of engaging portions 41A protrudes downward from the lower surface of the shielding plate 19a to be substantially perpendicular. Each of the engaging portions 41A of the plurality of engaging portions 41A has a concave portion (not shown) that is recessed upward.

具體而言,遮蔽部19B之複數個卡合部41A係與基板保持部5A卡合。遮蔽部19B係藉由複數個卡合部41A與基板保持部5A卡合來與基板保持部5A成為一體並旋轉。從而,藉由遮蔽部19B之旋轉,能夠有效地產生從氣體流出口191流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。 Specifically, the plurality of engaging portions 41A of the shielding portion 19B are engaged with the substrate holding portion 5A. The shielding portion 19B is integrated with the substrate holding portion 5A and rotates by engaging the plurality of engaging portions 41A with the substrate holding portion 5A. Therefore, by the rotation of the shielding portion 19B, the flow of the gas AR flowing out from the gas outlet 191 can be effectively generated. As a result, the gas AR can make the liquid droplets LQ attached to the inner wall surface 110 of the cup portion 11 flow down more smoothly.

更具體而言,基板保持部5A之複數個卡合部41B係分別嵌合於遮蔽部19B之複數個卡合部41A的凹部。結果,遮蔽部19B係伴隨基板保持部5之旋轉來與基板保持部5同步旋轉。 More specifically, the plurality of engaging portions 41B of the substrate holding portion 5A are respectively fitted into the recesses of the plurality of engaging portions 41A of the shielding portion 19B. As a result, the shielding portion 19B rotates in synchronization with the substrate holding portion 5 in accordance with the rotation of the substrate holding portion 5.

凸緣部19d係從軸部19b之上端部朝向徑向RD外方擴展成環狀。凸緣部19d例如是以中心軸AX作為中心的大致圓環板狀。 The flange portion 19d expands in a ring shape from the upper end portion of the shaft portion 19b toward the radial direction RD outward. The flange portion 19d has, for example, a substantially annular plate shape centered on the central axis AX.

基板處理裝置1A之遮蔽部動作機構21係具有遮蔽部移動機構21X來取代圖2所示的遮蔽部移動機構21a。又,基板處理裝置1A之遮蔽部動作機構21係不具有圖2所示的遮蔽部旋轉機構21b。 The shielding section moving mechanism 21 of the substrate processing apparatus 1A has a shielding section moving mechanism 21X instead of the shielding section moving mechanism 21a shown in FIG. 2. In addition, the shielding unit operating mechanism 21 of the substrate processing apparatus 1A does not have the shielding unit rotating mechanism 21b shown in FIG. 2.

遮蔽部移動機構21X係沿軸向AD使遮蔽部19B進行上升或下降。具體而言,遮蔽部移動機構21X係在鄰近位置與退避位置之間使遮蔽部19B進行上升或下降。鄰近位置以及退避位置係分別與實施形態1的鄰近位置以及退避位置同樣。在圖10中,遮蔽部19B係位於鄰近位置。在遮蔽部19B位於鄰近位置的情況下,複數個卡合部41A係分別卡合於複數個卡合部41B。另一方面,在遮蔽部19B位於退避位置的情況下,複數個卡合部41A係分別從複數個卡合部41B 分離。在以處理液處理基板W時,遮蔽部移動機構21X係將遮蔽部19B移動至鄰近位置。 The shielding part moving mechanism 21X raises or lowers the shielding part 19B in the axial direction AD. Specifically, the shielding part moving mechanism 21X raises or lowers the shielding part 19B between the adjacent position and the retracted position. The proximity position and the evacuation position are the same as the proximity position and the evacuation position of the first embodiment, respectively. In FIG. 10, the shielding portion 19B is located in an adjacent position. When the shielding portion 19B is located in the adjacent position, the plurality of engaging portions 41A are respectively engaged with the plurality of engaging portions 41B. On the other hand, when the shielding portion 19B is located at the retracted position, the plurality of engaging portions 41A are separated from the plurality of engaging portions 41B. Separate. When the substrate W is processed with the processing liquid, the shielding part moving mechanism 21X moves the shielding part 19B to an adjacent position.

具體而言,遮蔽部移動機構21X係具有保持部61以及升降機構62。升降機構62係使遮蔽部19B與保持部61一起上升或下降。升降機構62例如包含電動馬達以及滾珠螺桿。 Specifically, the shielding part moving mechanism 21X has a holding part 61 and an elevating mechanism 62. The raising and lowering mechanism 62 raises or lowers the shielding portion 19B together with the holding portion 61. The lifting mechanism 62 includes, for example, an electric motor and a ball screw.

保持部61係保持遮蔽部19B。保持部61係具有保持部本體611、本體支撐部612、凸緣支撐部613以及支撐部連接部614。保持部本體611係覆蓋遮蔽部19B的凸緣部19d之上方。本體支撐部612是大致水平地延伸的棒狀之手臂(arm)。本體支撐部612之一方的端部係連接於保持部本體611,另一方的端部係連接於升降機構62。支撐部連接部614係將凸緣支撐部613與保持部本體部611在凸緣部19d之周圍進行連接。凸緣支撐部613係在遮蔽部19B位於退避位置時從下側來與遮蔽部19B之凸緣部19d相接觸並予以支撐。另一方面,如圖10所示,凸緣支撐部613係在遮蔽部19B位於鄰近位置時從遮蔽部19B之凸緣部19d分離。結果,遮蔽部19B可進行旋轉。 The holding portion 61 holds the shielding portion 19B. The holding part 61 has a holding part body 611, a body supporting part 612, a flange supporting part 613 and a supporting part connecting part 614. The holding portion body 611 covers the upper portion of the flange portion 19d of the shielding portion 19B. The main body support portion 612 is a rod-shaped arm extending substantially horizontally. One end of the main body supporting portion 612 is connected to the holding portion main body 611, and the other end is connected to the lifting mechanism 62. The supporting portion connecting portion 614 connects the flange supporting portion 613 and the holding portion body portion 611 around the flange portion 19d. The flange support portion 613 is in contact with and supports the flange portion 19d of the shielding portion 19B from the lower side when the shielding portion 19B is in the retracted position. On the other hand, as shown in FIG. 10, the flange supporting portion 613 is separated from the flange portion 19d of the shielding portion 19B when the shielding portion 19B is located in an adjacent position. As a result, the shielding portion 19B can be rotated.

其次,參照圖11來說明處理液供給部9。圖11係顯示處理液供給部9的示意側視圖。如圖11所示,在實施形態2中,處理液供給部9之處理液噴嘴91係具有處理液流路931以及兩個氣體流路371。處理液流路931係連接於處理液供給機構93。兩個氣體流路371係連接於氣體供給機構37。 Next, the processing liquid supply unit 9 will be described with reference to FIG. 11. FIG. 11 is a schematic side view showing the processing liquid supply unit 9. As shown in FIG. 11, in the second embodiment, the processing liquid nozzle 91 of the processing liquid supply unit 9 has a processing liquid flow path 931 and two gas flow paths 371. The processing liquid flow path 931 is connected to the processing liquid supply mechanism 93. The two gas flow paths 371 are connected to the gas supply mechanism 37.

處理液供給機構93係將處理液供給至處理液噴嘴91。具體而言,處理液供給機構93係將處理液供給至處理液流路931。已供給至處理液流路931的處理液係從已設置於處理液噴嘴91之下端面的吐出口931a往下方吐出。 The processing liquid supply mechanism 93 supplies the processing liquid to the processing liquid nozzle 91. Specifically, the processing liquid supply mechanism 93 supplies the processing liquid to the processing liquid flow path 931. The processing liquid system that has been supplied to the processing liquid flow path 931 is discharged downward from the discharge port 931 a provided on the lower end surface of the processing liquid nozzle 91.

氣體供給機構37係將氣體供給至處理液噴嘴91。具體而言,氣體供給機構37係將氣體供給至兩個氣體流路371。氣體供給機構37例如將氮氣 等的惰性氣體供給至兩個氣體流路371。氣體供給機構37例如包含閥以及配管。 The gas supply mechanism 37 supplies gas to the processing liquid nozzle 91. Specifically, the gas supply mechanism 37 supplies gas to the two gas flow paths 371. The gas supply mechanism 37, for example, Inert gas such as the same is supplied to the two gas flow paths 371. The gas supply mechanism 37 includes, for example, a valve and a pipe.

已供給至處理液噴嘴91之中央部的氣體流路371的氣體係從已設置於處理液噴嘴91之下端面的下表面噴射口371a朝向下方噴射。另一方面,已供給至處理液噴嘴91之外周部的氣體流路371的氣體係從已設置於處理液噴嘴91之側面的複數個側面噴射口371b朝向周圍噴射。從而,依據實施形態2,能夠將氣體有效地供給至基板W。又,能夠將氣體有效地充填於處理液噴嘴91的外表面91a與構成孔部Sb的壁面WL之間的間隙GP。 The gas system supplied to the gas flow path 371 at the center of the processing liquid nozzle 91 is sprayed downward from the lower surface injection port 371 a provided on the lower end surface of the processing liquid nozzle 91. On the other hand, the gas system that has been supplied to the gas flow path 371 on the outer periphery of the processing liquid nozzle 91 is sprayed toward the surroundings from a plurality of side injection ports 371 b provided on the side surface of the processing liquid nozzle 91. Therefore, according to the second embodiment, gas can be efficiently supplied to the substrate W. In addition, it is possible to efficiently fill the gap GP between the outer surface 91a of the processing liquid nozzle 91 and the wall surface WL constituting the hole Sb with gas.

以上,參照圖式來說明本發明之實施形態。但是,本發明並非被限於上述之實施形態,而是能夠在不脫離其要旨的範圍內在各種的態樣中實施。又,上述之實施形態所揭示的複數個構成要素係可做適當改變。例如亦可將某實施形態所示的全構成要素之中的某構成要素追加於其他實施形態的構成要素中,或者亦可將某實施形態所示的全構成要素之中的幾個構成要素從實施形態中刪除。 Above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiment, but can be implemented in various aspects without departing from the gist. In addition, the plural constituent elements disclosed in the above-mentioned embodiments can be appropriately changed. For example, a certain component among all the components shown in a certain embodiment may be added to the components of another embodiment, or several components among all the components shown in a certain embodiment may be changed from Deleted in the implementation form.

又,圖式係為了易於理解發明而在主體中示意性地顯示各自的構成要素,有的情況所圖示的各個構成要素之厚度、長度、個數、間隔等從圖式製作之方面來考慮也會與實際不同。又,上述之實施形態所示的各個構成要素之構成係為一例,不是被特別限定,而當然可在實質上不脫離本發明之功效的範圍內進行各種的變更。 In addition, the drawings schematically show the respective constituent elements in the main body in order to facilitate the understanding of the invention. In some cases, the thickness, length, number, interval, etc. of the respective constituent elements shown in the drawings are considered from the perspective of drawing. It will be different from reality. In addition, the structure of each component shown in the above-mentioned embodiment is an example, and is not particularly limited, and of course various changes can be made within a range that does not substantially deviate from the effect of the present invention.

(1)在參照圖2至圖10所說明的實施形態1(包含第一變化例至第四變化例)以及實施形態2中,只要能從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR,氣體流出口191、氣體流入口193以及氣體流路195之形狀、數目以及配置就未被特別限定。例如亦可在俯視觀察下以複數個氣體流路195朝向徑向RD外方延伸成放射狀的方式來形成氣體流入口193以及氣體流路195。例如 亦可在俯視觀察下以一個氣體流路195朝向徑向RD外方延伸的方式來形成氣體流路口193以及氣體流路195。氣體流出口191、氣體流入口193以及氣體流路195之各自的數目既可為一個又可為複數個。又,遮蔽部19亦可對應複數個杯體部11之形狀而具有噴射角度不同的複數個氣體流出口191。更且,亦可相應於杯體部11之數目而變更氣體流出口191之數目。 (1) In Embodiment 1 (including the first modification to the fourth modification) and Embodiment 2 described with reference to FIGS. 2 to 10, as long as the gas can flow out from the gas outlet 191 toward the inner wall surface of the cup portion 11 The shape, number, and arrangement of the gas AR of 110, the gas outlet 191, the gas inlet 193, and the gas flow path 195 are not particularly limited. For example, in a plan view, the gas inflow port 193 and the gas channel 195 may be formed such that a plurality of gas channels 195 extend radially outward in the radial direction RD. E.g The gas flow path port 193 and the gas flow path 195 may be formed such that one gas flow path 195 extends outward in the radial direction RD in a plan view. The number of each of the gas outlet 191, the gas inlet 193, and the gas flow path 195 may be one or plural. In addition, the shielding portion 19 may have a plurality of gas outlets 191 having different injection angles corresponding to the shapes of the plurality of cup portions 11. Furthermore, the number of gas outlets 191 can also be changed corresponding to the number of cup parts 11.

(2)在參照圖7所說明的實施形態1之第二變化例中,只要能從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR,氣體供給機構35亦可不具有風扇31。 (2) In the second modification of the first embodiment described with reference to FIG. 7, as long as the gas AR can flow out from the gas outlet 191 toward the inner wall surface 110 of the cup portion 11, the gas supply mechanism 35 may not have the fan 31 .

(3)在參照圖10所說明的實施形態2中,遮蔽部19B亦可具有參照圖8所說明的遮蔽部19之遮蔽板19a以及軸部19b。在此情況下,從圖11所顯示的處理液噴嘴91之複數個側面噴射口371b所噴射的氣體會流入至圖8所顯示的氣體流入口193。在此情況下,氣體供給機構37係相當於「氣體供給部」之一例。 (3) In the second embodiment described with reference to FIG. 10, the shielding portion 19B may have the shielding plate 19a and the shaft portion 19b of the shielding portion 19 described with reference to FIG. 8. In this case, the gas injected from the plurality of side injection ports 371b of the processing liquid nozzle 91 shown in FIG. 11 flows into the gas inflow port 193 shown in FIG. 8. In this case, the gas supply mechanism 37 is equivalent to an example of the "gas supply unit".

(4)在參照圖2至圖10所說明的實施形態1(包含第一變化例至第四變化例)以及實施形態2中,遮蔽板19a亦可構成對應於杯體部11之形狀而可變動氣體流出口191之方向。又,杯體移動機構15亦可使杯體部11上下擺動。在此情況下,能夠使已附著於杯體部11之內壁面110的液滴LQ更有效地流下。 (4) In Embodiment 1 (including the first modification to the fourth modification) and Embodiment 2 described with reference to FIGS. 2 to 10, the shielding plate 19a may also be configured to correspond to the shape of the cup body portion 11. The direction of the gas outlet 191 is changed. In addition, the cup moving mechanism 15 may also swing the cup part 11 up and down. In this case, the droplets LQ that have adhered to the inner wall surface 110 of the cup portion 11 can be made to flow down more effectively.

[產業可利用性] [Industry Availability]

本發明係關於一種基板處理裝置以及基板處理方法,且具有產業可利用性。 The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability.

1:基板處理裝置 1: Substrate processing equipment

3:腔室 3: chamber

3a:頂板部 3a: Top plate

5:基板保持部 5: Board holding part

7:基板旋轉部 7: Substrate rotating part

9:處理液供給部 9: Treatment liquid supply part

11:杯體部 11: Cup body

15:杯體移動機構 15: Cup moving mechanism

17:排出埠口 17: discharge port

19:遮蔽部 19: Shading part

19a:遮蔽板 19a: shielding plate

19b:軸部 19b: Shaft

21:遮蔽部動作機構 21: Shading part action mechanism

21a:遮蔽部移動機構 21a: Moving mechanism of shielding part

21b:遮蔽部旋轉機構 21b: Shading part rotation mechanism

22:氣體供給機構(氣體供給部) 22: Gas supply mechanism (gas supply part)

24:風扇過濾器單元 24: Fan filter unit

51:旋轉基座 51: Rotating base

53:夾緊構件 53: Clamping member

71:馬達 71: Motor

73:軸 73: Axis

91:處理液噴嘴(流通部) 91: Treatment liquid nozzle (circulation part)

93:處理液供給機構 93: Treatment liquid supply mechanism

110:內壁面 110: inner wall

191:氣體流出口 191: Gas Outlet

AD:軸向 AD: axial

AX:中心軸 AX: central axis

GP:間隙 GP: Gap

RD:徑向 RD: radial

Sb:孔部 Sb: Hole

W:基板 W: substrate

Wa:上表面 Wa: upper surface

Claims (19)

一種基板處理裝置,係具有:基板保持部,係將基板水平地保持;基板旋轉部,係以朝向上下方向延伸的中心軸為中心使前述基板與前述基板保持部一體地旋轉;遮蔽部,係與前述基板之上表面對向;遮蔽部動作機構,係使前述遮蔽部動作;處理液供給部,係將處理液供給至前述基板;以及杯體部,係配置於前述基板保持部之周圍以承接前述處理液;當前述遮蔽部移動至與前述基板的上表面對向之鄰近位置時,前述遮蔽部係覆蓋前述基板的上表面而遮蔽前述基板的上方;前述遮蔽部係具有氣體流出口,前述氣體流出口係供朝向前述杯體部之內壁面的氣體流出;前述氣體流出口係位於前述遮蔽部之周緣部;前述氣體流出口係將已取入的前述氣體經由氣體流路而朝向前述杯體部之內壁面流出。 A substrate processing apparatus is provided with a substrate holding part which holds the substrate horizontally; a substrate rotation part which integrally rotates the substrate and the substrate holding part around a central axis extending in the vertical direction; and a shielding part Opposite to the upper surface of the substrate; the shielding part action mechanism to actuate the shielding part; the processing liquid supply part to supply the processing liquid to the substrate; and the cup body part to be arranged around the substrate holding part Receiving the processing liquid; when the shielding portion moves to an adjacent position opposite to the upper surface of the substrate, the shielding portion covers the upper surface of the substrate and shields the upper side of the substrate; the shielding portion has a gas outlet, The gas outflow port is for the gas to flow out toward the inner wall surface of the cup body; the gas outflow port is located at the periphery of the shielding portion; the gas outflow port is for taking in the gas to the gas flow path toward the The inner wall of the cup body flows out. 如請求項1所記載之基板處理裝置,其中前述杯體部係具有杯體上端部,前述杯體上端部係比前述基板更位於上方;前述氣體流出口係與前述杯體上端部鄰近。 The substrate processing apparatus according to claim 1, wherein the cup portion has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate; and the gas outlet is adjacent to the upper end portion of the cup body. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部係覆蓋前述基板之上表面整體並遮蔽前述基板之上方;前述氣體流出口係面向前述杯體部之內壁面。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding portion covers the entire upper surface of the substrate and shields the upper side of the substrate; the gas outlet faces the inner wall surface of the cup portion. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部係具有遮蔽板,前述遮蔽板係與前述基板之上表面對向;前述遮蔽板係具有對向壁面,前述對向壁面係與前述杯體部之內壁面對向;前述氣體流出口係設置於前述對向壁面。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding portion has a shielding plate, the shielding plate is opposed to the upper surface of the substrate; the shielding plate has an opposed wall surface, and the opposed wall surface is opposed to The inner wall of the cup body faces facing; the gas outlet is arranged on the opposite wall. 如請求項4所記載之基板處理裝置,其中前述遮蔽板係具有:前述氣體流出口;氣體流入口,係供前述氣體流入;以及前述氣體流路,係使前述氣體流入口與前述氣體流出口連通。 The substrate processing apparatus according to claim 4, wherein the shielding plate has: the gas outflow port; the gas inflow port for the gas to flow in; and the gas flow path for the gas inflow port and the gas outflow port Connected. 如請求項5所記載之基板處理裝置,其中前述杯體部之內壁面係具有杯體傾斜面,前述杯體傾斜面係隨著從前述中心軸朝向徑向之外方而朝向下方傾斜;構成前述氣體流路的內表面係具有流路傾斜面,前述流路傾斜面係隨著朝向前述徑向之外方而朝向下方傾斜;前述流路傾斜面之相對於水平方向的傾斜角度為前述杯體傾斜面之相對於水平方向的傾斜角度以下。 The substrate processing apparatus according to claim 5, wherein the inner wall surface of the cup portion has an inclined surface of the cup, and the inclined surface of the cup is inclined downward from the center axis toward the radially outward direction; The inner surface of the gas flow path has a flow path inclined surface, the flow path inclined surface is inclined downward as it goes outward in the radial direction; the inclination angle of the flow path inclined surface with respect to the horizontal direction is the cup The inclination angle of the inclined surface of the body with respect to the horizontal direction is below. 如請求項5所記載之基板處理裝置,其中更具有:氣體供給部,係供給前述氣體;從前述氣體供給部所供給的前述氣體係流入至前述氣體流入口。 The substrate processing apparatus according to claim 5, further comprising: a gas supply unit that supplies the gas; and the gas system supplied from the gas supply unit flows into the gas inflow port. 如請求項7所記載之基板處理裝置,其中前述氣體流入口係位於前述遮蔽板之上表面部;前述氣體流路係連通前述氣體流入口與前述氣體流出口;前述氣體供給部係具有風扇,前述風扇係將前述氣體送出至前述氣體流入口;前述風扇係配置於前述遮蔽板之上表面部。 The substrate processing apparatus according to claim 7, wherein the gas inlet is located on the upper surface of the shielding plate; the gas flow path connects the gas inlet and the gas outlet; the gas supply part has a fan, The fan sends out the gas to the gas inlet; the fan is arranged on the upper surface of the shielding plate. 如請求項8所記載之基板處理裝置,其中前述遮蔽部係更具有軸部,前述軸部係被固定於前述遮蔽板;前述軸部係以前述中心軸為中心而與前述遮蔽板一起旋轉;前述風扇係被插通於前述軸部並將已從前述遮蔽板之上方吸入的前述氣體對著相對於前述中心軸的徑向噴出。 The substrate processing apparatus according to claim 8, wherein the shielding portion further has a shaft portion, and the shaft portion is fixed to the shielding plate; the shaft portion rotates with the shielding plate centered on the central axis; The fan is inserted into the shaft portion and blows the air sucked from above the shielding plate in a radial direction with respect to the central axis. 如請求項8所記載之基板處理裝置,其中前述氣體供 給部係更具有噴嘴,前述噴嘴係與前述風扇對向;前述噴嘴係從前述遮蔽板之上表面側朝向前述風扇噴出前述氣體。 The substrate processing apparatus described in claim 8, wherein the aforementioned gas is supplied The feeding section further has a nozzle, and the nozzle is opposed to the fan; the nozzle is to spray the gas toward the fan from the upper surface side of the shield plate. 如請求項7所記載之基板處理裝置,其中前述遮蔽部係更具有軸部,前述軸部係固定於前述遮蔽板;前述軸部係以前述中心軸為中心而與前述遮蔽板一起旋轉;前述遮蔽部係具有孔部,前述孔部係貫通前述軸部以及前述遮蔽板並沿前述中心軸而延伸;前述處理液供給部係具有流通部,前述流通部係供前述處理液流通;前述流通部係配置於前述孔部;前述氣體供給部係將前述氣體供給至前述流通部之外表面與構成前述孔部的壁面之間的間隙;前述氣體流入口係設置於構成前述孔部的前述壁面。 The substrate processing apparatus according to claim 7, wherein the shielding portion further has a shaft portion, and the shaft portion is fixed to the shielding plate; the shaft portion rotates with the shielding plate around the central axis; The shielding portion has a hole, which penetrates the shaft and the shielding plate and extends along the central axis; the processing liquid supply portion has a flow portion, and the flow portion is for the flow of the processing liquid; the flow portion Is arranged in the hole; the gas supply portion supplies the gas to the gap between the outer surface of the flow portion and the wall surface constituting the hole; the gas inflow port is provided on the wall surface constituting the hole. 如請求項7所記載之基板處理裝置,其中前述氣體供給部係具有風扇過濾器單元,前述風扇過濾器單元係配置於前述基板處理裝置之頂板部;前述風扇過濾器單元係使從前述遮蔽板之上方朝向前述基板保持部的下向流產生。 The substrate processing apparatus according to claim 7, wherein the gas supply part has a fan filter unit, the fan filter unit is arranged on the top plate of the substrate processing apparatus; the fan filter unit is arranged from the shielding plate The upward flow is generated toward the downward flow of the aforementioned substrate holding portion. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部係具有:遮蔽板,係與前述基板之上表面對向;以及噴嘴,係配置於前述遮蔽板之上表面部;前述噴嘴之開口為前述氣體流出口,且與前述杯體部之內壁面對向。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding portion has: a shielding plate opposed to the upper surface of the substrate; and a nozzle arranged on the upper surface of the shielding plate; The opening is the gas outlet and faces the inner wall of the cup body. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部動作機構係包含遮蔽部移動機構,前述遮蔽部移動機構係使前述遮蔽部上升或下降。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding section operation mechanism includes a shielding section moving mechanism, and the shielding section moving mechanism raises or lowers the shielding section. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部動作機構係包含遮蔽部旋轉機構,前述遮蔽部旋轉機構係使前述遮 蔽部旋轉。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding portion operating mechanism includes a shielding portion rotating mechanism, and the shielding portion rotating mechanism makes the shielding portion rotating mechanism. The cover rotates. 如請求項1或2所記載之基板處理裝置,其中前述遮蔽部係具有複數個卡合部,前述複數個卡合部係與前述基板保持部卡合;前述遮蔽部係藉由前述複數個卡合部與前述基板保持部卡合而與前述基板保持部成為一體而旋轉。 The substrate processing apparatus according to claim 1 or 2, wherein the shielding portion has a plurality of engaging portions, and the plurality of engaging portions are engaged with the substrate holding portion; and the shielding portion is provided by the plurality of cards The engaging portion is engaged with the substrate holding portion to rotate integrally with the substrate holding portion. 一種基板處理方法,係包含:保持步驟,係藉由基板保持部來保持基板;遮蔽部接近步驟,係使前述基板保持部與遮蔽部接近;旋轉步驟,係使前述基板與前述基板保持部一起旋轉;氣流產生步驟,係使氣體從前述遮蔽部之氣體流出口流出來使朝向杯體部之內壁面的氣流產生;以及處理步驟,係以處理液來處理前述基板;在前述遮蔽部接近步驟中,當前述遮蔽部移動至與前述基板的上表面對向之鄰近位置時,前述遮蔽部係覆蓋前述基板的上表面而遮蔽前述基板的上方;前述氣體流出口係位於前述遮蔽部之周緣部;在前述氣流產生步驟中,前述氣體流出口係將已取入的前述氣體經由氣體流路而朝向前述杯體部之內壁面流出。 A substrate processing method includes: a holding step of holding a substrate by a substrate holding portion; a shielding portion approaching step of bringing the substrate holding portion closer to the shielding portion; and a rotating step of bringing the substrate and the substrate holding portion together Rotating; air flow generation step, which is to make the gas flow out of the gas outlet of the shielding portion to generate the air flow toward the inner wall surface of the cup body; and the processing step, which is to process the substrate with the processing liquid; approach the step at the shielding portion Wherein, when the shielding portion moves to an adjacent position opposite to the upper surface of the substrate, the shielding portion covers the upper surface of the substrate and shields the upper side of the substrate; the gas outlet is located at the peripheral portion of the shielding portion ; In the gas flow generating step, the gas outlet is to flow the gas that has been taken in through the gas flow path toward the inner wall surface of the cup portion. 如請求項17所記載之基板處理方法,其中在前述氣流產生步驟中,前述氣體係從位於前述遮蔽部之周緣部的前述氣體流出口流出並沿前述杯體部之內壁面流動。 The substrate processing method according to claim 17, wherein in the gas flow generating step, the gas system flows out from the gas outflow port located at the periphery of the shielding portion and flows along the inner wall surface of the cup portion. 如請求項18所記載之基板處理方法,其中前述杯體部係具有杯體上端部,前述杯體上端部係比前述基板更位於上方;在前述氣體產生步驟中,前述氣體係從與前述杯體上端部鄰近的前述氣體流出口朝向前述杯體上端部流出。 The substrate processing method according to claim 18, wherein the cup portion has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate; in the gas generation step, the gas system is separated from the cup body. The gas outlet adjacent to the upper end of the body flows out toward the upper end of the cup.
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