TWI732320B - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- TWI732320B TWI732320B TW108137597A TW108137597A TWI732320B TW I732320 B TWI732320 B TW I732320B TW 108137597 A TW108137597 A TW 108137597A TW 108137597 A TW108137597 A TW 108137597A TW I732320 B TWI732320 B TW I732320B
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- 239000000758 substrate Substances 0.000 title claims abstract description 313
- 238000003672 processing method Methods 0.000 title claims description 17
- 239000007788 liquid Substances 0.000 claims abstract description 126
- 230000007246 mechanism Effects 0.000 claims abstract description 100
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 265
- 230000004048 modification Effects 0.000 description 41
- 238000012986 modification Methods 0.000 description 41
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
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- 238000010129 solution processing Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
Description
本發明係關於一種基板處理裝置以及基板處理方法。 The present invention relates to a substrate processing device and a substrate processing method.
專利文獻1所記載的基板處理裝置係對基板進行藥液處理。基板處理裝置係具備受液部。受液部係具備杯體(cup)部。在對基板進行藥液處理時,杯體部會上升且已由旋轉夾盤(spin chuck)所保持的基板之周圍係藉由杯體部之導引部所包圍。然後,基板會與旋轉夾盤一起旋轉且從吐出頭朝向基板之上表面供給藥液。藥液係利用藉由基板之旋轉所致的離心力沿基板之上表面而流動且從基板之端緣部朝向側方飛散。從基板之端緣部飛散來的藥液係順著杯體部的導引部之內壁面而流下且從廢棄槽被排出。
The substrate processing apparatus described in
特別是,受液部係更具備集液部。集液部係配置於杯體部的導引部之內側。集液部之內周面係具有複數個溝槽。各個溝槽係沿鉛直方向而延伸。從而,從基板之端緣部飛散出的處理液之液滴,首先會附著於集液部之內周面。已附著於內周面的液滴之大部分係沿各個溝槽中的半圓狀之曲面而流動且與其他已附著的液滴匯流。匯流後的液滴係利用比匯流前的液滴更相對大的自身重量沿溝槽之延伸方向流下。 In particular, the liquid receiving part is further equipped with a liquid collecting part. The liquid collecting part is arranged on the inner side of the guiding part of the cup body part. The inner peripheral surface of the liquid collecting part has a plurality of grooves. Each groove extends in the vertical direction. Therefore, the droplets of the processing liquid scattered from the edge portion of the substrate first adhere to the inner peripheral surface of the liquid collecting portion. Most of the liquid droplets attached to the inner peripheral surface flow along the semicircular curved surface in each groove and merge with other attached droplets. The droplets after the confluence flow down along the extending direction of the groove with a relatively larger weight than the droplets before the confluence.
從而,能夠抑制液滴滯留於杯體部之內壁面。結果,能夠減低因放置不管液滴已滯留於杯體部之內壁面的狀態所引起的基板之污染。 Therefore, it is possible to prevent liquid droplets from staying on the inner wall surface of the cup body. As a result, it is possible to reduce the contamination of the substrate caused by the state in which the liquid droplets have been left on the inner wall surface of the cup body portion.
[專利文獻1]日本特開2018-56151號公報。 [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56151.
然而,近年來有被要求更進一步抑制液滴滯留於杯體部之內壁面的期望。 However, in recent years, there has been a desire to further suppress the retention of liquid droplets on the inner wall surface of the cup body.
本發明係有鑑於上述課題而開發完成,其目的在於提供一種能夠有效地抑制液滴滯留於杯體部之內壁面的基板處理裝置以及基板處理方法。 The present invention has been developed in view of the above-mentioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can effectively prevent liquid droplets from staying on the inner wall surface of the cup portion.
依據本發明之一態樣,基板處理裝置,係具有基板保持部、基板旋轉部、遮蔽部、遮蔽部動作機構、處理液供給部以及杯體部。基板保持部係將基板水平地保持。基板旋轉部係以朝向上下方向延伸的中心軸為中心使前述基板與前述基板保持部一體地旋轉。遮蔽部係與前述基板之上表面對向。遮蔽部動作機構係使前述遮蔽部動作。處理液供給部係將處理液供給至前述基板。杯體部係配置於前述基板保持部之周圍以承接前述處理液。前述遮蔽部係具有氣體流出口,前述氣體流出口係供朝向前述杯體部之內壁面的氣體流出。 According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding portion, a substrate rotating portion, a shielding portion, a shielding portion operating mechanism, a processing liquid supply portion, and a cup portion. The substrate holding portion holds the substrate horizontally. The substrate rotating portion integrally rotates the substrate and the substrate holding portion around a central axis extending in the up-down direction. The shielding portion is opposite to the upper surface of the aforementioned substrate. The shielding part operation mechanism operates the aforementioned shielding part. The processing liquid supply unit supplies the processing liquid to the aforementioned substrate. The cup portion is arranged around the substrate holding portion to receive the processing liquid. The shielding portion has a gas outflow port, and the gas outflow port is for outflow of the gas toward the inner wall surface of the cup portion.
在本發明的基板處理裝置中,前述氣體流出口較佳是位於前述遮蔽部之周緣部。 In the substrate processing apparatus of the present invention, the gas outflow port is preferably located at the peripheral edge of the shielding portion.
在本發明的基板處理裝置中,前述杯體部較佳是具有杯體上端部,前述杯體上端部係比前述基板更位於上方。前述氣體流出口較佳 是與前述杯體上端部鄰近。 In the substrate processing apparatus of the present invention, the cup portion preferably has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate. The aforementioned gas outlet is better It is adjacent to the upper end of the aforementioned cup.
在本發明的基板處理裝置中,前述遮蔽部較佳是覆蓋前述基板之上表面整體並遮蔽前述基板之上方。前述氣體流出口較佳是面向前述杯體部之內壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably covers the entire upper surface of the substrate and shields the upper side of the substrate. The gas outflow port preferably faces the inner wall surface of the cup portion.
在本發明的基板處理裝置中,前述遮蔽部較佳是具有遮蔽板,前述遮蔽板係與前述基板之上表面對向。前述遮蔽板較佳是具有對向壁面,前述對向壁面係與前述杯體部之內壁面對向。前述氣體流出口較佳是設置於前述對向壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a shielding plate, and the shielding plate is opposed to the upper surface of the substrate. Preferably, the shielding plate has an opposite wall surface, and the opposite wall surface faces the inner wall of the cup portion. The gas outflow port is preferably provided on the opposing wall surface.
在本發明的基板處理裝置中,前述遮蔽板較佳是具有:前述氣體流出口;氣體流入口,係供前述氣體流入;以及氣體流路。氣體流路較佳是使前述氣體流入口與前述氣體流出口連通。 In the substrate processing apparatus of the present invention, the shielding plate preferably has: the gas outlet; the gas inlet for the gas to flow in; and a gas flow path. The gas flow path preferably connects the gas inflow port and the gas outflow port.
在本發明的基板處理裝置中,前述杯體部之內壁面較佳是具有杯體傾斜面,前述杯體傾斜面係隨著從前述中心軸朝向徑向之外方而朝向下方傾斜。構成前述氣體流路的內表面較佳是具有流路傾斜面,前述流路傾斜面係隨著朝向前述徑向之外方而朝向下方傾斜。前述流路傾斜面之相對於水平方向的傾斜角度較佳是前述杯體傾斜面之相對於水平方向的傾斜角度以下。 In the substrate processing apparatus of the present invention, the inner wall surface of the cup portion preferably has a cup inclined surface, and the cup inclined surface is inclined downward from the central axis toward the radially outward direction. The inner surface constituting the gas flow path preferably has a flow path inclined surface, and the flow path inclined surface is inclined downward as it goes outward in the radial direction. The inclination angle of the inclined surface of the flow path with respect to the horizontal direction is preferably equal to or less than the inclination angle of the inclined surface of the cup body with respect to the horizontal direction.
在本發明的基板處理裝置中,較佳是更具有氣體供給部,前述氣體供給部係供給前述氣體。從前述氣體供給部所供給的前述氣體較佳是流入至前述氣體流入口。 In the substrate processing apparatus of the present invention, it is preferable to further include a gas supply unit, and the gas supply unit supplies the gas. The gas supplied from the gas supply unit preferably flows into the gas inflow port.
在本發明的基板處理裝置中,前述氣體流入口較佳是位於前述遮蔽板之上表面部。前述氣體流路較佳是連通前述氣體流入口與前述氣體流出口。前述氣體供給部較佳是具有風扇,前述風扇係將前述氣體送出至前述氣體流入口。前述風扇較佳是配置於前述遮蔽板之上表面 部。 In the substrate processing apparatus of the present invention, the gas inflow port is preferably located on the upper surface of the shielding plate. The gas flow path preferably communicates the gas inflow port and the gas outflow port. The gas supply unit preferably has a fan, and the fan sends the gas to the gas inlet. The aforementioned fan is preferably arranged on the upper surface of the aforementioned shielding plate unit.
在本發明的基板處理裝置中,前述遮蔽部較佳是更具有軸部,前述軸部係被固定於前述遮蔽板。前述軸部較佳是以前述中心軸為中心而與前述遮蔽板一起旋轉。前述風扇較佳是被插通於前述軸部並將已從前述遮蔽板之上方吸入的前述氣體噴出至相對於前述中心軸的徑向。 In the substrate processing apparatus of the present invention, the shielding portion preferably further has a shaft portion, and the shaft portion is fixed to the shielding plate. It is preferable that the said shaft part rotates with the said shielding board centering on the said central axis. The fan is preferably inserted into the shaft portion and blows the gas sucked from above the shielding plate in a radial direction with respect to the central axis.
在本發明的基板處理裝置中,前述氣體供給部較佳是更具有噴嘴,前述噴嘴係與前述風扇對向。前述噴嘴較佳是從前述遮蔽板之上表面側朝向前述風扇噴出前述氣體。 In the substrate processing apparatus of the present invention, the gas supply unit preferably further has a nozzle, and the nozzle is opposed to the fan. The nozzle preferably blows the gas from the upper surface side of the shielding plate toward the fan.
在本發明的基板處理裝置中,前述遮蔽部較佳是更具有軸部,前述軸部係固定於前述遮蔽板。前述軸部較佳是以前述中心軸為中心而與前述遮蔽板一起旋轉。前述遮蔽部較佳是具有孔部,前述孔部係貫通前述軸部以及前述遮蔽板並沿前述中心軸而延伸。前述處理液供給部較佳是具有流通部,前述流通部係供前述處理液流通;前述流通部較佳是配置於前述孔部。前述氣體供給部較佳是將前述氣體供給至前述流通部之外表面與構成前述孔部的壁面之間的間隙。前述氣體流入口較佳是設置於構成前述孔部的前述壁面。 In the substrate processing apparatus of the present invention, the shielding portion preferably further has a shaft portion, and the shaft portion is fixed to the shielding plate. It is preferable that the said shaft part rotates with the said shielding board centering on the said center axis|shaft. The shielding portion preferably has a hole portion, and the hole portion penetrates the shaft portion and the shielding plate and extends along the central axis. The processing liquid supply part preferably has a flow part, and the flow part is for the flow of the treatment liquid; the flow part is preferably arranged in the hole. The gas supply part preferably supplies the gas to the gap between the outer surface of the flow part and the wall surface constituting the hole part. The gas inflow port is preferably provided on the wall surface constituting the hole.
在本發明的基板處理裝置中,前述氣體供給部較佳是具有風扇過濾器單元(fan filter unit)。風扇過濾器單元較佳是配置於前述基板處理裝置之頂板部。前述風扇過濾器單元較佳是使從前述遮蔽板之上方朝向前述基板保持部的下向流(downflow)產生。 In the substrate processing apparatus of the present invention, the gas supply unit preferably has a fan filter unit. The fan filter unit is preferably arranged on the top plate of the aforementioned substrate processing apparatus. The fan filter unit preferably generates a downflow from above the shielding plate toward the substrate holding portion.
在本發明的基板處理裝置中,前述遮蔽部較佳是具有遮蔽板以及噴嘴。遮蔽板較佳是與前述基板之上表面對向。噴嘴較佳是配置於前述遮蔽板之上表面部。前述噴嘴之開口較佳為前述氣體流出口,且前 述噴嘴之開口較佳是與前述杯體部之內壁面對向。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a shielding plate and a nozzle. The shielding plate is preferably opposite to the upper surface of the aforementioned substrate. The nozzle is preferably arranged on the upper surface of the shielding plate. The opening of the aforementioned nozzle is preferably the aforementioned gas outlet, and the front The opening of the nozzle is preferably facing the inner wall of the cup body.
在本發明的基板處理裝置中,前述遮蔽部動作機構較佳是包含遮蔽部移動機構,前述遮蔽部移動機構係使前述遮蔽部上升或下降。 In the substrate processing apparatus of the present invention, it is preferable that the shielding section operating mechanism includes a shielding section moving mechanism, and the shielding section moving mechanism raises or lowers the shielding section.
在本發明的基板處理裝置中,前述遮蔽部動作機構較佳是包含遮蔽部旋轉機構,前述遮蔽部旋轉機構係使前述遮蔽部旋轉。 In the substrate processing apparatus of the present invention, it is preferable that the shielding section operating mechanism includes a shielding section rotating mechanism, and the shielding section rotating mechanism rotates the shielding section.
在本發明的基板處理裝置中,前述遮蔽部較佳是具有複數個卡合部,前述複數個卡合部係與前述基板保持部卡合。前述遮蔽部較佳是藉由前述複數個卡合部與前述基板保持部卡合而與前述基板保持部成為一體而旋轉。 In the substrate processing apparatus of the present invention, the shielding portion preferably has a plurality of engaging portions, and the plurality of engaging portions are engaged with the substrate holding portion. It is preferable that the shielding part rotates integrally with the substrate holding part by the engagement of the plurality of engaging parts with the substrate holding part.
本發明之另一態樣的基板處理方法,係包含:保持步驟,係藉由基板保持部來保持基板;遮蔽部接近步驟,係使前述基板保持部與遮蔽部接近;旋轉步驟,係使前述基板與前述基板保持部一起旋轉;氣流產生步驟,係使氣體從前述遮蔽部之氣體流出口流出來使朝向杯體部之內壁面的氣流產生;以及處理步驟,係以處理液來處理前述基板。 A substrate processing method of another aspect of the present invention includes: a holding step of holding the substrate by a substrate holding portion; a shielding portion approaching step of bringing the substrate holding portion and the shielding portion closer to each other; and a rotating step of making the aforementioned The substrate rotates with the substrate holding portion; the air flow generation step is to make the gas flow out of the gas outlet of the shielding portion to generate the air flow toward the inner wall surface of the cup portion; and the processing step is to process the substrate with a processing liquid .
在本發明的基板處理方法中,在前述氣流產生步驟中,前述氣體較佳是從位於前述遮蔽部之周緣部的前述氣體流出口流出並沿前述杯體部之內壁面流動。 In the substrate processing method of the present invention, in the gas flow generating step, the gas preferably flows out from the gas outflow port located at the peripheral edge of the shielding portion and flows along the inner wall surface of the cup portion.
在本發明的基板處理方法中,前述杯體部較佳是具有杯體上端部,前述杯體上端部係比前述基板更位於上方。在前述氣體產生步驟中,前述氣體較佳是從與前述杯體上端部鄰近的前述氣體流出口朝向前述杯體上端部流出。 In the substrate processing method of the present invention, the cup portion preferably has an upper end portion of the cup body, and the upper end portion of the cup body is located above the substrate. In the gas generating step, the gas preferably flows out from the gas outlet adjacent to the upper end of the cup toward the upper end of the cup.
依據本發明,能夠提供一種能夠有效地抑制液滴滯留於杯體部之內壁面的基板處理裝置以及基板處理方法。 According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that can effectively prevent liquid droplets from staying on the inner wall surface of the cup portion.
1,1A:基板處理裝置 1,1A: Substrate processing equipment
3:腔室 3: chamber
3a:頂板部 3a: Top plate
5,5A:基板保持部 5, 5A: Board holding part
7:基板旋轉部 7: Substrate rotating part
9:處理液供給部 9: Treatment liquid supply part
11:杯體部 11: Cup body
11a:傾斜部 11a: Inclined part
11b:側壁部 11b: side wall
15:杯體移動機構 15: Cup moving mechanism
17:排出埠口 17: discharge port
19,19A,19B:遮蔽部 19, 19A, 19B: shielding part
19a,19x:遮蔽板 19a, 19x: shielding plate
19b:軸部 19b: Shaft
19c:周緣部 19c: Peripheral part
19d:凸緣部 19d: Flange
21:遮蔽部動作機構 21: Shading part action mechanism
21a,21X:遮蔽部移動機構 21a, 21X: moving mechanism for shielding part
21b:遮蔽部旋轉機構 21b: Shading part rotation mechanism
22,35,37:氣體供給機構(氣體供給部) 22, 35, 37: Gas supply mechanism (gas supply part)
24:風扇過濾器單元(氣體供給部) 24: Fan filter unit (gas supply part)
31:風扇(氣體供給部) 31: Fan (gas supply part)
33,39:噴嘴 33, 39: nozzle
41A,41B:卡合部 41A, 41B: snap part
51:旋轉基座 51: Rotating base
53:夾緊構件 53: Clamping member
61:保持部 61: holding part
62:升降機構 62: Lifting mechanism
71:馬達 71: Motor
73:軸 73: Axis
91:處理液噴嘴(流通部) 91: Treatment liquid nozzle (circulation part)
91a:外表面 91a: outer surface
93:處理液供給機構 93: Treatment liquid supply mechanism
100:基板處理系統 100: Substrate processing system
110:內壁面 110: inner wall
111:杯體上端部 111: The upper end of the cup
113:杯體傾斜面 113: Cup body inclined surface
190:對向壁面 190: Opposite Wall
191:氣體流出口 191: Gas Outlet
192:凹部 192: Concave
193:氣體流入口 193: Gas Inlet
195:氣體流路 195: Gas flow path
196:上表面部 196: upper surface part
201:基底構件 201: base member
203:上部構件 203: Upper member
205:支柱 205: Pillar
371:氣體通路 371: Gas Path
371a:下表面噴射口 371a: lower surface jet
371b:側面噴射口 371b: Side jet
390:開口 390: open
611:保持部本體 611: Holder body
612:本體支撐部 612: body support
613:凸緣支撐部 613: Flange Support
614:支撐部連接部 614: Support part connection part
931:處理液流路 931: Treatment fluid flow path
931a:吐出口 931a: spit out
1951:內表面 1951: inner surface
1951a:流路傾斜面 1951a: Inclined surface of flow path
AD:軸向 AD: axial
AR:氣體 AR: Gas
AX:中心軸 AX: central axis
C:基板收容器 C: substrate container
CD:周方向 CD: circumferential direction
CR:搬運機器人 CR: Handling robot
RD:徑向 RD: radial
GP:間隙 GP: Gap
IR:索引機器人 IR: Index Robot
LQ:液滴 LQ: droplets
PS:授受部 PS: Grant and Acceptance Department
Sb:孔部 Sb: Hole
U1:索引單元 U1: Index unit
U2:處理單元 U2: Processing Unit
W:基板 W: substrate
Wa:上表面 Wa: upper surface
WL:壁面 WL: Wall surface
θ1,θ2:傾斜角度 θ1, θ2: tilt angle
[圖1]係顯示本發明之實施形態1的基板處理系統的示意剖視圖。
[Fig. 1] A schematic cross-sectional view showing a substrate processing system according to
[圖2]係顯示實施形態1的基板處理裝置的示意剖視圖。
[Fig. 2] A schematic cross-sectional view showing the substrate processing apparatus of
[圖3]中之(a)係顯示實施形態1的基板處理裝置之遮蔽部以及杯體部的示意剖視圖,圖3中之(b)係顯示實施形態1的基板處理裝置之遮蔽部的示意俯視圖。
[Fig. 3] (a) is a schematic cross-sectional view showing the shielding portion and cup portion of the substrate processing apparatus of
[圖4]係放大顯示圖3中之(a)所示的遮蔽部與杯體部之一部分的示意剖視圖。 [Fig. 4] An enlarged schematic cross-sectional view showing a part of the shielding portion and the cup portion shown in (a) in Fig. 3.
[圖5]係顯示實施形態1的基板處理方法的流程圖(flowchart)。
[Fig. 5] A flow chart showing the substrate processing method of
[圖6]中之(a)係顯示實施形態1之第一變化例的基板處理裝置之遮蔽部、杯體部以及風扇的示意剖視圖,圖6中之(b)係顯示第一變化例的基板處理裝置之遮蔽部以及風扇的示意俯視圖。
[FIG. 6] (a) is a schematic cross-sectional view showing the shielding portion, cup portion, and fan of the substrate processing apparatus of the first modification of
[圖7]係顯示實施形態1之第二變化例的基板處理裝置之遮蔽部、杯體部以及氣體供給機構的示意剖視圖。
[Fig. 7] A schematic cross-sectional view showing the shielding portion, the cup portion, and the gas supply mechanism of the substrate processing apparatus according to the second modification of
[圖8]係顯示實施形態1之第三變化例的基板處理裝置之遮蔽部、杯體部以及氣體供給機構的示意剖視圖。
[Fig. 8] A schematic cross-sectional view showing the shielding portion, the cup portion, and the gas supply mechanism of the substrate processing apparatus of the third modification of
[圖9]係顯示實施形態1之第四變化例的基板處理裝置之遮蔽部以及杯體部的示意剖視圖。
[Fig. 9] A schematic cross-sectional view showing the shielding portion and the cup portion of the substrate processing apparatus according to the fourth modification of
[圖10]係顯示本發明之實施形態2的基板處理裝置的示意剖視圖。 [Fig. 10] A schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 2 of the present invention.
[圖11]係顯示實施形態2的基板處理裝置之處理液供給部的示意側視圖。 Fig. 11 is a schematic side view showing the processing liquid supply part of the substrate processing apparatus of the second embodiment.
以下,一邊參照圖式一邊說明本發明的實施形態。再者,圖中,對於相同或相當部分係附記同一個參照符號而不重複說明。又,在本發明之實施形態中,X軸、Y軸以及Z軸係相互地正交,X軸以及Y軸係平行於水平方向,Z軸係平行於鉛直方向。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the figure, the same or equivalent parts are given the same reference symbols and the description is not repeated. Furthermore, in the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
參照圖1至圖5來說明本發明之實施形態1的基板處理系統100。基板處理系統100係處理基板W。基板W例如是半導體晶圓(wafer)、液晶顯示裝置用基板、電漿顯示器(plasma display)用基板、場發射顯示器(Field Emission Display:FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩(photomask)用基板、陶瓷(ceramic)基板、或是太陽能電池用基板。基板W例如是大致圓板狀。
The
首先,參照圖1來說明基板處理系統100。圖1係顯示基板處理系統100的示意俯視圖。如圖1所示,基板處理系統100係具有索引單元(indexer unit)U1以及處理單元U2。索引單元U1係包含複數個基板收容器C以及索引機器人(indexer robot)IR。處理單元U2係包含複數個基板處理裝置1、搬運機器人CR以及授受部PS。
First, the
各個基板收容器C係將複數片基板W予以積層而收容。索引機器人IR係從複數個基板收容器C中之任一個基板收容器C取出未處理的基板W並將基板W交付給授受部PS。然後,在授受部PS係載置有已從基板收容器C取出的基板W。搬運機器人CR係從授受部PS接收未處理的基板W並將基板W搬入至複數個基板處理裝置1中之任一個基板處理裝置1。
In each substrate storage container C, a plurality of substrates W are stacked and stored. The index robot IR takes out the unprocessed substrate W from any one substrate container C among the plurality of substrate containers C and delivers the substrate W to the accepting part PS. Then, the substrate W that has been taken out from the substrate storage container C is placed on the receiving and receiving part PS. The transfer robot CR receives the unprocessed substrate W from the transfer unit PS and transfers the substrate W to any one of the plurality of
然後,基板處理裝置1係處理未處理的基板W。基板處理裝置1是逐片處理基板W的葉片式。在實施形態中,基板處理裝置1係藉由處理液來
處理基板W。
Then, the
在進行藉由基板處理裝置1所為的處理之後,搬運機器人CR係將處理完畢的基板W從基板處理裝置1取出並將基板W交付給授受部PS。然後,在授受部PS係載置有已由基板處理裝置1所處理過的基板W。索引機器人IR係從授受部PS接收處理完畢的基板W並將基板W收容於複數個基板收容器C中之任一個基板收容器C。
After the processing by the
其次,參照圖2來說明基板處理裝置1。圖2係顯示基板處理裝置1的示意剖面。如圖2所示,基板處理裝置1係具有腔室(chamber)3、基板保持部5、基板旋轉部7、處理液供給部9、複數個杯體部11、複數個杯體移動機構15、排出埠口(port)17、遮蔽部19以及遮蔽部動作機構21。
Next, the
腔室3係具有大致箱形狀。腔室3係具有頂板部3a。腔室3係收容基板保持部5、基板旋轉部7、處理液供給部9、複數個杯體部11、遮蔽部19以及遮蔽部動作機構21。
The
基板保持部5係將基板W水平地保持。具體而言,基板保持部5係具有旋轉基座(spin base)51以及複數個夾緊構件(chuck member)53。複數個夾緊構件53係設置於旋轉基座51。複數個夾緊構件53係將基板W保持在水平的姿勢。旋轉基座51為大致圓板狀,且將複數個夾緊構件53支撐在水平的姿勢。
The
基板旋轉部7係以中心軸AX作為中心使基板W與基板保持部5一體地旋轉。中心軸AX係朝向基板W之上下方向延伸。具體而言,基板旋轉部7係具有馬達(motor)71以及軸(shaft)73。軸73係結合於旋轉基座51。馬達71係透過軸73且以中心軸AX為中心使旋轉基座51旋轉。結果,已由複數個夾緊構件53所保持的基板W會以中心軸AX為中心旋轉。
The
處理液供給部9係將處理液供給至基板W。只要是在能夠處理基板W的範圍內,處理液的組成係未被特別限定。例如,處理液既可為藥液又可
為沖洗液(rinse liquid)。藥液例如是聚合物(polymer)去除液或蝕刻液(etching liquid)。沖洗液例如是純水或碳酸水。具體而言,處理液供給部9係具有處理液噴嘴91以及處理液供給機構93。處理液供給機構93係連接於處理液噴嘴91且將處理液供給至處理液噴嘴91。處理液供給機構93例如具有閥(valve)以及配管。處理液係流通於處理液噴嘴91。然後,處理液噴嘴91係在基板W旋轉中朝向基板W之上表面Wa吐出處理液。處理液噴嘴91係相當於「流通部」之一例。
The processing
複數個杯體部11的各個杯體部11係承接從基板W所飛散來的處理液。複數個杯體部11係配置於基板保持部5之周圍且具有相對於中心軸AX而成為旋轉對稱的形狀。例如,複數個杯體部11之各個杯體部11係具有大致圓筒形狀。
The
複數個杯體部11之各個杯體部11係在受液位置與退避位置之間進行上升或下降。受液位置係顯示杯體部11與基板W對向於徑向RD的位置。杯體部11係在位於受液位置時係承接從基板W所飛散來的處理液。徑向RD係顯示相對於中心軸AX的徑向,且與中心軸AX正交。另一方面,退避位置係顯示比受液位置更下方的位置。
Each
具體而言,以處理液處理基板W時,至少一個杯體部11會位於受液位置。然後,基板W會與基板保持部5一體地旋轉而處理液會從處理液噴嘴91供給至基板W之上表面Wa。處理液係利用藉由基板W之旋轉所致的離心力沿基板W之上表面Wa而流動且從基板W之端緣部朝向徑向RD外方飛散。杯體部11係承接從基板W之端緣部飛散來的處理液。然後,處理液係順著杯體部11之內壁面110流下且從排出埠口17被排出。
Specifically, when the substrate W is processed with the processing liquid, at least one
複數個杯體移動機構15係分別對應於複數個杯體部11所配置。杯體移動機構15係在受液位置與退避位置之間使所對應的杯體部11進行上升或下降。杯體移動機構15例如包含電動馬達以及滾珠螺桿(ball screw)。
The plurality of
遮蔽部19係相對於基板W之上表面Wa而與軸向AD對向。然後,遮蔽部19係覆蓋基板W之上表面Wa整體並遮蔽基板W之上方。軸向AD係顯示與中心軸AX平行的方向。
The shielding
具體而言,遮蔽部19係具有遮蔽板19a、軸部19b以及孔部Sb。遮蔽板19a係以中心軸AX為中心而朝向徑向RD外方擴展。遮蔽板19a為大致圓板狀。遮蔽板19a係相對於基板W之上表面Wa而與軸向AD對向。然後,遮蔽板19a係覆蓋基板W之上表面Wa整體並遮蔽基板W之上方。軸部19b係固定於遮蔽板19a。軸部19b係以中心軸AX為中心而與遮蔽板19a一起旋轉。軸部19b例如是大致圓筒狀。孔部Sb係貫通軸部19b以及遮蔽板19a並沿中心軸AX而延伸。處理液噴嘴91係配置於孔部Sb。
Specifically, the shielding
遮蔽部動作機構21係使遮蔽部19動作。具體而言,遮蔽部動作機構21係具有遮蔽部移動機構21a以及遮蔽部旋轉機構21b。
The shielding
遮蔽部移動機構21a係沿軸向AD使遮蔽部19上升或下降。具體而言,遮蔽部移動機構21a係在鄰近位置與退避位置之間使遮蔽部19上升或下降。鄰近位置係顯示遮蔽部19下降並隔出預定間隔地鄰近於基板W之上表面Wa的位置。在圖2中,遮蔽部19係位於鄰近位置。退避位置係在鄰近位置更上方,並顯示遮蔽部19上升而從基板W分離的位置。以處理液處理基板W時,遮蔽部移動機構21a係將遮蔽部19移動至鄰近位置。遮蔽部移動機構21a例如包含電動馬達以及滾珠螺桿。
The shielding
遮蔽部旋轉機構21b係以中心軸AX為中心使遮蔽部19旋轉。具體而言,遮蔽部旋轉機構21b係使遮蔽部19與基板保持部5同步旋轉。同步旋轉係表示朝向與基板保持部5相同的方向以相同的轉速旋轉。遮蔽部旋轉機構21b例如包含電動馬達。
The shielding
基板處理裝置1亦可更具有氣體供給機構22以及風扇過濾器單元
24。腔室3係收容氣體供給機構22。
The
氣體供給機構22係將氣體供給至孔部Sb。氣體例如是氮氣等的惰性氣體。氣體供給機構22例如包含閥以及配管。
The
風扇過濾器單元24係將氣體供給至腔室3之內部。具體而言,風扇過濾器單元24係配置於基板處理裝置1之頂板部3a。然後,風扇過濾器單元24係使從遮蔽板19a之上方朝向基板保持部5的下向流產生。更具體而言,風扇過濾器單元24係具有風扇以及過濾器。然後,風扇過濾器單元24係藉由風扇而取入基板處理裝置1的外部空氣且透過過濾器將外部空氣供給至腔室3之內部。外部空氣係潔淨空氣(clean air)。再者,基板處理裝置1係設置於無塵室(clean room)。風扇過濾器單元24係相當於「氣體供給部」之一例。
The
其次,參照圖3中之(a)以及圖3中之(b)來說明遮蔽部19。圖3中之(a)係顯示遮蔽部19以及杯體部11的示意剖視圖。在圖3中之(a)中,遮蔽部19係位於鄰近位置。圖3中之(b)係顯示遮蔽部19的示意俯視圖。在圖3中之(b)中係俯視觀察遮蔽部19。在本說明書中,俯視觀察係顯示從軸向AD觀察對象物。
Next, the shielding
如圖3中之(a)所示,遮蔽部19係具有氣體流出口191。然後,從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR。從而,在杯體部11之內壁面110中,能夠藉由氣體AR而產生從上部往下部流動的氣流。
As shown in (a) of FIG. 3, the shielding
結果,依據實施形態1,能夠使已附著於杯體部11之內壁面110的液滴LQ藉由氣流而滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。從而,與不設置氣體流出口191的情況相較,更能夠有效地抑制在杯體部11之內壁面110產生微粒子(particle)、以及基板W因飛濺(splashback)現象而受到污染。所謂微粒子係指因已附著於杯體部11之內壁面110的液滴LQ固化而產生的物質。所謂飛濺現象係指從基板W朝向杯體部11飛散的新處理液與由已附著於杯體部11之內壁面110的舊處理液所構成的液滴LQ
碰撞而處理液朝向基板W彈回的現象。
As a result, according to the first embodiment, the liquid droplets LQ that have adhered to the
特別是在實施形態1中,氣體流出口191係位於遮蔽部19之周緣部19c。從而,從氣體流出口191所流出的氣體AR係容易朝向杯體部11之內壁面110。結果,在內壁面110中,能夠藉由氣體AR有效地產生從上部往下部流動的氣流,並能夠藉由氣流使已附著於內壁面110的液滴LQ更滑順地流下。
In particular, in the first embodiment, the
此外,在實施形態1中,氣體流出口191係面向杯體部11之內壁面110。從而,在內壁面110中,能夠藉由氣體AR更有效地產生從上部往下部流動的氣流。結果,能夠藉由氣流使已附著於內壁面110的液滴LQ更滑順地流下。
In addition, in the first embodiment, the
特別是在實施形態1中,能夠藉由遮蔽部移動機構21a以氣體流出口191面向杯體部11之內壁面110的方式輕易地配置遮蔽部19。
In particular, in the first embodiment, the shielding
又,在實施形態1中,遮蔽部19係以中心軸AX為中心藉由遮蔽部旋轉機構21b進行旋轉。從而,能夠藉由遮蔽部19之旋轉而有效地產生從氣體流出口191所流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。
Moreover, in
如圖3中之(a)以及圖3中之(b)所示,遮蔽部19之遮蔽板19a係具有基底構件201、上部構件203以及複數個支柱205。再者,在圖3中之(a)係未顯示有支柱205。
As shown in (a) in FIG. 3 and (b) in FIG. 3, the shielding
基底構件201與上部構件203係於軸向AD隔出間隔地對向。複數個支柱205之各個支柱205係從基底構件201朝向上方突出。複數個支柱205係沿相對於中心軸AX的周方向CD配置於基底構件201。複數個支柱205係支撐上部構件203。換句話說,複數個支柱205係結合著基底構件201與上部構件203。在實施形態1中,在俯視觀察下,基底構件201為大致圓板狀,上部構件203為大致圓帶狀。
The
遮蔽板19a係具有氣體流出口191、氣體流入口193以及氣體流路195。在實施形態1中,氣體流出口191以及氣體流入口193之各個係在俯視觀察下呈大致圓環狀。氣體流入口193係位於遮蔽板19a之上表面部196。在氣體流入口193係流入有氣體。例如氣體是藉由遮蔽板19a之旋轉而從氣體流入口193流入。
The shielding
例如,風扇過濾器單元24(圖2)係將氣體供給至氣體流入口193。從而,從風扇過濾器單元24所供給的氣體會流入至氣體流入口193。換句話說,即便藉由風扇過濾器單元24所產生的下向流仍能夠產生從氣體流出口191所流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。
For example, the fan filter unit 24 (FIG. 2) supplies gas to the
氣體流路195係藉由基底構件201與上部構件203之間的空間所形成。氣體流路195係使氣體流入口193與氣體流出口191連通。從而,依據實施形態1,能夠從氣體流入口193取入氣體並將氣體流動至氣體流路195,且使氣體AR從氣體流出口191朝向杯體部11之內壁面110流出。
The
特別是在實施形態1中,氣體流出口191係遍及於徑向RD之全方位朝向中心軸AX之外方開口。從而,能夠對杯體部11之內壁面110朝向周方向CD均等地噴吹氣體AR。結果,能夠藉由氣體AR使已附著於內壁面110的液滴LQ更滑順地流下。
In particular, in the first embodiment, the
其次,參照圖4來詳細說明遮蔽部19。圖4係放大顯示圖3中之(a)所示的遮蔽部19與杯體部11之一部分的示意剖視圖。如圖4所示,遮蔽部19之遮蔽板19a係具有對向壁面190。對向壁面190係與杯體部11之內壁面110對向於徑向RD。對向壁面190為周緣部19c之表面。氣體流出口191係設置於對向壁面190。從而,依據實施形態1,從氣體流出口191流出的氣體AR係容易朝向杯體部11之內壁面110且能夠藉由氣體AR使液滴LQ更滑順地流下。
Next, the shielding
又,構成遮蔽板19a之氣體流路195的內表面1951係具有流路傾斜面1951a。流路傾斜面1951a係隨著朝向徑向RD之外方而朝向下方傾斜。
In addition, the
另一方面,杯體部11係具有傾斜部11a以及側壁部11b。傾斜部11a係相對於側壁部11b而朝向上方傾斜於中心軸AX此側。傾斜部11a係具有上下呈開口的中空之大致圓錐台形狀。側壁部11b係沿中心軸AX而延伸。側壁部11b係具有大致圓筒形狀。
On the other hand, the
杯體部11係具有杯體上端部111。杯體上端部111為傾斜部11a之上端部。杯體上端部111係比基板W更位於上方。然後,氣體流出口191係隔出間隔地與杯體上端部111鄰近。從而,依據實施形態1,在內壁面110中,能夠藉由氣體AR而產生從上部往下部流動之較強的氣流。結果,能夠藉由氣流使液滴LQ更滑順地流下。
The
又,杯體部11之內壁面110係具有杯體傾斜面113。杯體傾斜面113為杯體部11之內壁面110當中傾斜部11a之內壁面。杯體傾斜面113係隨著從中心軸AX朝向徑向RD之外方而朝向下方傾斜。
In addition, the
然後,遮蔽部19a之流路傾斜面1951a相對於水平方向的傾斜角度θ1為杯體部11之杯體傾斜面113相對於水平方向的傾斜角度θ2以下。從而,依據實施形態1,沿流路傾斜面1951a而流出的氣體AR可有效地噴吹至杯體傾斜面113,並有效地產生從杯體傾斜面113朝向下方的氣流。結果,能夠藉由氣流使液滴LQ更滑順地流下。
Then, the inclination angle θ1 of the flow path inclined
其次,參照圖2以及圖5來說明實施形態1的基板處理方法。基板處理方法能藉由基板處理裝置1來執行。圖5係顯示實施形態1的基板處理方法的流程圖。如圖5所示,基板處理方法係包含步驟S1至步驟S5。
Next, the substrate processing method of
如圖2以及圖5所示,在步驟S1中,基板處理裝置1係藉由基板保持部5來保持基板W。步驟S1係相當於「保持步驟」之一例。
As shown in FIGS. 2 and 5, in step S1, the
在步驟S2中,基板處理裝置1係使基板保持部5與遮蔽部19接近。步驟S2係相當於「遮蔽部接近步驟」之一例。
In step S2, the
在步驟S3中,基板處理裝置1係使基板W與基板保持部5一起旋轉。步驟S3係相當於「旋轉步驟」之一例。
In step S3, the
在步驟S4中,基板處理裝置1係使氣體從遮蔽部19之氣體流出口191流出並使朝向杯體部11之內壁面110的氣流產生。步驟S5係相當於「氣流產生步驟」之一例。
In step S4, the
在步驟S5中,基板處理裝置1係以處理液來處理基板W。步驟S5係相當於「處理步驟」之一例。
In step S5, the
以上,如已參照圖2以及圖5所說明的,依據實施形態1的基板處理方法,在步驟S4中基於來自氣體流出口191之氣體AR而產生的氣流會從內壁面110之上部朝向下部並沿內壁面110流動。從而,能夠使已附著於杯體部11之內壁面110的液滴LQ滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。
As described above with reference to FIGS. 2 and 5, according to the substrate processing method of
特別是在實施形態1中,在步驟S4中,氣體AR係從位於遮蔽部19之周緣部19c的氣體流出口191流出並沿杯體部11之內壁面110流動。具體而言,在步驟S4中,氣體AR係從與杯體上端部111鄰近的氣體流出口191朝向杯體上端部111流出。從而,能夠藉由基於氣體AR而產生的氣流使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。
Particularly in the first embodiment, in step S4, the gas AR flows out from the
又,在實施形態1中係與在步驟S5中將處理液供給至基板W並行,可從氣體流出口191流出氣體AR。從而,能夠有效地藉由基於氣體AR而產生的氣流使基板W之處理中因飛散之處理液所引起的液滴LQ沿杯體部11之內壁面110流下。
In addition, in the first embodiment, in parallel with the supply of the processing liquid to the substrate W in step S5, the gas AR can flow out from the
再者,只要步驟S4能在步驟S5之前段被執行,則步驟S2至 步驟S4之執行順序既可被適當變更,步驟S2至步驟S4當中之一部分或全部的步驟亦可被並行執行。 Furthermore, as long as step S4 can be executed before step S5, steps S2 to The execution order of step S4 can be appropriately changed, and some or all of the steps from step S2 to step S4 can also be executed in parallel.
參照圖6中之(a)以及圖6中之(b)來說明實施形態1之第一變化例的基板處理裝置1。第一變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:基板處理裝置1具有氣流產生用的風扇31。以下,主要說明第一變化例與實施形態1的不同點。
The
圖6中之(a)係顯示第一變化例的基板處理裝置1之遮蔽部19、杯體部11以及風扇31的示意剖視圖。在圖6中之(a)中,遮蔽部19係位於鄰近位置。圖6中之(b)係顯示第一變化例的基板處理裝置1之遮蔽部19以及風扇31的示意俯視圖。在圖6中之(b)中係俯視觀察遮蔽部19以及風扇31。
(A) in FIG. 6 is a schematic cross-sectional view showing the shielding
如圖6中之(a)以及圖6中之(b)所示,基板處理裝置1係除了圖2所示的基板處理裝置1之構成以外還更具有風扇31。風扇31係配置於遮蔽部19的遮蔽板19a之上表面部196。風扇31係將氣體供給至氣體流入口193。從而,從風扇31所供給的氣體會流入至氣體流入口193。結果,依據第一變化例,與不設置風扇31的情況相較,更能夠藉由從氣體流出口191所流出的氣體AR而產生較強的氣流,並能夠藉由氣流使杯體部11之內壁面110的液滴LQ更滑順地流下。風扇31係相當於「氣體供給部」之一例。
As shown in Fig. 6(a) and Fig. 6(b), the
特別是在第一變化例中,遮蔽板19a係更具有凹部192。凹部192係形成於遮蔽板19a之上表面部196。風扇31係配置於凹部192。然後,風扇31係將氣體送出至位於遮蔽板19a之上表面部196的氣體流入口193。具體而言,風扇31係將氣體送出至位於遮蔽板19a之凹部192的氣體流入口193。
Especially in the first modification example, the shielding
更具體而言,風扇31係被插通於軸部19b以將從遮蔽板19a之上方所吸入的氣體對著相對於中心軸AX的徑向RD噴出。從而,依據第一變化例,能夠將比較強之氣流的氣體流入至氣體流入口193,並能夠從氣體流出口191噴出比較強之氣流的氣體AR。結果,在內壁面110中,能夠藉由氣體AR而產生從上部往下部流動之比較強的氣流,並能夠使內壁面110之液滴LQ更滑順地流下。風扇31例如是西洛克風扇(Sirocco fan)。
More specifically, the
參照圖7來說明實施形態1之第二變化例的基板處理裝置1。第二變化例與第一變化例的主要不同點係在於:基板處理裝置1具有用以產生氣流的噴嘴33。以下,主要說明第二變化例與第一變化例的不同點。
The
圖7係顯示第二變化例的基板處理裝置1之遮蔽部19、杯體部11以及氣體供給機構35的示意剖視圖。在圖7中,遮蔽部19係位於鄰近位置。如圖7所示,基板處理裝置1係除了圖2所示的基板處理裝置1之構成以外還更具有氣體供給機構35。氣體供給機構35係將氣體供給至氣體流入口193。然後,從氣體供給機構35所供給的氣體會流入至氣體流入口193。氣體供給機構35係相當於「氣體供給部」之一例。
FIG. 7 is a schematic cross-sectional view showing the shielding
具體而言,氣體供給機構35係具有風扇31以及噴嘴33。風扇31係與第一變化例的風扇31同樣。噴嘴33係相對於風扇31而與軸向AD對向。噴嘴33係從遮蔽板19a之上表面側朝向風扇31噴出氣體。更且,風扇31係將來自噴嘴33的氣體送出至氣體流入口193。從而,與不設置噴嘴33的情況相較,更能夠將較強之氣流的氣體流入至氣體流入口193,並能夠從氣體流出口191噴出較強之氣流的氣體AR。結果,在內壁面110中,能夠藉由氣體AR
而產生從上部往下部流動之較強的氣流,並能夠使內壁面110之液滴LQ更滑順地流下。再者,在第二變化例中,噴嘴33係將氮氣等的惰性氣體朝向風扇31噴出。
Specifically, the
參照圖8來說明實施形態1之第三變化例的基板處理裝置1。在基板處理裝置1中,第三變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:氣體流入口193係位於遮蔽部19之孔部Sb。以下,主要說明第三變化例與實施形態1的不同點。
The
圖8係顯示第三變化例的基板處理裝置1之遮蔽部19、杯體部11以及氣體供給機構22的示意剖視圖。在圖8中,遮蔽部19係位於鄰近位置。如圖8所示,氣體供給機構22係將氣體供給至氣體流入口193。然後,從氣體供給機構22所供給的氣體會流入至氣體流入口193。氣體供給機構22係相當於「氣體供給部」之一例。
FIG. 8 is a schematic cross-sectional view showing the shielding
具體而言,氣體供給機構22係將氣體供給至處理液噴嘴91的外表面91a與構成孔部Sb的壁面WL之間的間隙GP。氣體係在以處理液來處理基板W之前朝向基板W供給並將基板W之上方空間形成為預定的氛圍(atmosphere)。又,在基板W之上方空間成為預定之氛圍之後,氣體會被充填於間隙GP。在第三變化例中,氣體流入口193係設置於構成孔部Sb的壁面WL。從而,氣體供給機構22已供給的氣體也會流入至氣體流入口193。然後,氣體流入口193係藉由氣體流路195來與氣體流出口191連通。從而,能夠將已供給至間隙GP的氣體從氣體流入口193取入並使氣體流動至氣體流路195,且使氣體AR從氣體流出口191朝向杯體部11之內壁面110流出。結果,在內壁面110中能夠藉由氣體AR而產生從上部往下部流動的氣體,並能夠藉
由氣流使已附著於內壁面110的液滴LQ滑順地流下。
Specifically, the
特別是在第三變化例中,藉由氣體供給機構22將氣體供給至氣體流入口193。換句話說,沿用供給至基板W的氣體或被充填於間隙GP的氣體來將氣體取入至氣體流入口193。從而,亦可不設置用以將氣體供給至氣體流入口193之專用的氣體供給機構,而能夠減低基板處理裝置1的製造成本。
In particular, in the third modification example, the gas is supplied to the
參照圖9來說明實施形態1之第四變化例的基板處理裝置1。在基板處理裝置1中,第四變化例與參照圖1至圖5所說明的實施形態1的主要不同點係在於:噴嘴39之開口為氣體流出口191。以下,主要說明第四變化例與實施形態1的不同點。
The
圖9係顯示第四變化例的基板處理裝置1之遮蔽部19A以及杯體部11的示意剖視圖。在圖9中,遮蔽部19A係位於鄰近位置。如圖9所示,基板處理裝置1係具有遮蔽部19A來取代圖2所示的基板處理裝置1之遮蔽部19。遮蔽部19A係具有遮蔽板19x、軸部19b以及噴嘴39。遮蔽板19x係具有與圖4所示之遮蔽板19a同樣的構成。但是,遮蔽板19x係不具有圖4所顯示的氣體流出口191、氣體流入口193以及氣體流路195。遮蔽板19x為大致圓板狀。
FIG. 9 is a schematic cross-sectional view showing the shielding
噴嘴39係配置於遮蔽板19x之上表面部196。然後,噴嘴39之開口390為氣體流出口191且與杯體部11之內壁面110對向。從而,噴嘴39係朝向內壁面110噴出氣體AR。在第四變化例中,噴嘴39係將氮氣等的惰性氣體朝向內壁面110噴出。
The
依據第四變化例,能夠藉由噴嘴39將較強之氣流的氣體AR朝向內壁面110噴出。從而,在內壁面110中,能夠藉由氣體AR而產生從上部
往下部流動之較強的氣流。結果,能夠使內壁面110之液滴LQ滑順地流下。又,有關第四變化例之圖9,更有效的是噴嘴39也藉由上表面部196之遮蔽板19x旋轉而進行旋轉。上表面部196以及噴嘴39更佳是同一個構造體。
According to the fourth modification example, the gas AR with a stronger airflow can be ejected toward the
參照圖10以及圖11來說明本發明之實施形態2的基板處理裝置1A。實施形態2與實施形態1的主要不同點係在於:基板處理裝置1A係藉由基板旋轉部7使遮蔽部19B旋轉。以下,主要說明實施形態2與實施形態1的不同點。
The
圖10係顯示實施形態2的基板處理裝置1A的示意剖視圖。如圖10所示,基板處理裝置1A係具備氣體供給機構37來取代圖2所示的基板處理裝置1之氣體供給機構22。有關氣體供給機構37將於後述。
Fig. 10 is a schematic cross-sectional view showing a
基板處理裝置1A之基板保持部5A係除了圖2所示的基板保持部5之構成以外還更具有複數個卡合部41B。複數個卡合部41B係以中心軸AX為中心並以大致等角度間隔朝向周方向CD配置於旋轉基座51之上表面的外周部。複數個卡合部41B係比複數個夾緊構件53更配置於徑向RD之外方。複數個卡合部41B之各個卡合部41B係從旋轉基座51之上表面朝向上方突出成大致垂直。
The
基板處理裝置1A之遮蔽部19B係具有與實施形態1之遮蔽部19(圖4)同樣的氣體流出口191。從而,依據實施形態2,能夠與實施形態1同樣地使已附著於杯體部11之內壁面110的液滴LQ藉由氣流而滑順地流下。換句話說,能夠有效地抑制液滴LQ滯留於杯體部11之內壁面110。其他,在實施形態2中係具有與實施形態1同樣的功效。
The shielding
又,遮蔽部19B係除了圖2所示的遮蔽部19之構成以外還更具有複數個卡合部41A以及凸緣(flange)部19d。
In addition, the shielding
複數個卡合部41A係以中心軸AX作為中心並以大致等角度間隔朝向周方向CD配置於遮蔽板19a之下表面的外周部。複數個卡合部41A係分別與複數個卡合部41B對向於軸向AD。複數個卡合部41A之各個卡合部41A係從遮蔽板19a之下表面朝向下方突出成大致垂直。複數個卡合部41A之各個卡合部41A係具有朝向上方凹陷的凹部(未圖示)。
The plurality of
具體而言,遮蔽部19B之複數個卡合部41A係與基板保持部5A卡合。遮蔽部19B係藉由複數個卡合部41A與基板保持部5A卡合來與基板保持部5A成為一體並旋轉。從而,藉由遮蔽部19B之旋轉,能夠有效地產生從氣體流出口191流出的氣體AR之氣流。結果,能夠藉由氣體AR使已附著於杯體部11之內壁面110的液滴LQ更滑順地流下。
Specifically, the plurality of engaging
更具體而言,基板保持部5A之複數個卡合部41B係分別嵌合於遮蔽部19B之複數個卡合部41A的凹部。結果,遮蔽部19B係伴隨基板保持部5之旋轉來與基板保持部5同步旋轉。
More specifically, the plurality of engaging
凸緣部19d係從軸部19b之上端部朝向徑向RD外方擴展成環狀。凸緣部19d例如是以中心軸AX作為中心的大致圓環板狀。
The
基板處理裝置1A之遮蔽部動作機構21係具有遮蔽部移動機構21X來取代圖2所示的遮蔽部移動機構21a。又,基板處理裝置1A之遮蔽部動作機構21係不具有圖2所示的遮蔽部旋轉機構21b。
The shielding
遮蔽部移動機構21X係沿軸向AD使遮蔽部19B進行上升或下降。具體而言,遮蔽部移動機構21X係在鄰近位置與退避位置之間使遮蔽部19B進行上升或下降。鄰近位置以及退避位置係分別與實施形態1的鄰近位置以及退避位置同樣。在圖10中,遮蔽部19B係位於鄰近位置。在遮蔽部19B位於鄰近位置的情況下,複數個卡合部41A係分別卡合於複數個卡合部41B。另一方面,在遮蔽部19B位於退避位置的情況下,複數個卡合部41A係分別從複數個卡合部41B
分離。在以處理液處理基板W時,遮蔽部移動機構21X係將遮蔽部19B移動至鄰近位置。
The shielding
具體而言,遮蔽部移動機構21X係具有保持部61以及升降機構62。升降機構62係使遮蔽部19B與保持部61一起上升或下降。升降機構62例如包含電動馬達以及滾珠螺桿。
Specifically, the shielding
保持部61係保持遮蔽部19B。保持部61係具有保持部本體611、本體支撐部612、凸緣支撐部613以及支撐部連接部614。保持部本體611係覆蓋遮蔽部19B的凸緣部19d之上方。本體支撐部612是大致水平地延伸的棒狀之手臂(arm)。本體支撐部612之一方的端部係連接於保持部本體611,另一方的端部係連接於升降機構62。支撐部連接部614係將凸緣支撐部613與保持部本體部611在凸緣部19d之周圍進行連接。凸緣支撐部613係在遮蔽部19B位於退避位置時從下側來與遮蔽部19B之凸緣部19d相接觸並予以支撐。另一方面,如圖10所示,凸緣支撐部613係在遮蔽部19B位於鄰近位置時從遮蔽部19B之凸緣部19d分離。結果,遮蔽部19B可進行旋轉。
The holding
其次,參照圖11來說明處理液供給部9。圖11係顯示處理液供給部9的示意側視圖。如圖11所示,在實施形態2中,處理液供給部9之處理液噴嘴91係具有處理液流路931以及兩個氣體流路371。處理液流路931係連接於處理液供給機構93。兩個氣體流路371係連接於氣體供給機構37。
Next, the processing
處理液供給機構93係將處理液供給至處理液噴嘴91。具體而言,處理液供給機構93係將處理液供給至處理液流路931。已供給至處理液流路931的處理液係從已設置於處理液噴嘴91之下端面的吐出口931a往下方吐出。
The processing
氣體供給機構37係將氣體供給至處理液噴嘴91。具體而言,氣體供給機構37係將氣體供給至兩個氣體流路371。氣體供給機構37例如將氮氣
等的惰性氣體供給至兩個氣體流路371。氣體供給機構37例如包含閥以及配管。
The
已供給至處理液噴嘴91之中央部的氣體流路371的氣體係從已設置於處理液噴嘴91之下端面的下表面噴射口371a朝向下方噴射。另一方面,已供給至處理液噴嘴91之外周部的氣體流路371的氣體係從已設置於處理液噴嘴91之側面的複數個側面噴射口371b朝向周圍噴射。從而,依據實施形態2,能夠將氣體有效地供給至基板W。又,能夠將氣體有效地充填於處理液噴嘴91的外表面91a與構成孔部Sb的壁面WL之間的間隙GP。
The gas system supplied to the
以上,參照圖式來說明本發明之實施形態。但是,本發明並非被限於上述之實施形態,而是能夠在不脫離其要旨的範圍內在各種的態樣中實施。又,上述之實施形態所揭示的複數個構成要素係可做適當改變。例如亦可將某實施形態所示的全構成要素之中的某構成要素追加於其他實施形態的構成要素中,或者亦可將某實施形態所示的全構成要素之中的幾個構成要素從實施形態中刪除。 Above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiment, but can be implemented in various aspects without departing from the gist. In addition, the plural constituent elements disclosed in the above-mentioned embodiments can be appropriately changed. For example, a certain component among all the components shown in a certain embodiment may be added to the components of another embodiment, or several components among all the components shown in a certain embodiment may be changed from Deleted in the implementation form.
又,圖式係為了易於理解發明而在主體中示意性地顯示各自的構成要素,有的情況所圖示的各個構成要素之厚度、長度、個數、間隔等從圖式製作之方面來考慮也會與實際不同。又,上述之實施形態所示的各個構成要素之構成係為一例,不是被特別限定,而當然可在實質上不脫離本發明之功效的範圍內進行各種的變更。 In addition, the drawings schematically show the respective constituent elements in the main body in order to facilitate the understanding of the invention. In some cases, the thickness, length, number, interval, etc. of the respective constituent elements shown in the drawings are considered from the perspective of drawing. It will be different from reality. In addition, the structure of each component shown in the above-mentioned embodiment is an example, and is not particularly limited, and of course various changes can be made within a range that does not substantially deviate from the effect of the present invention.
(1)在參照圖2至圖10所說明的實施形態1(包含第一變化例至第四變化例)以及實施形態2中,只要能從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR,氣體流出口191、氣體流入口193以及氣體流路195之形狀、數目以及配置就未被特別限定。例如亦可在俯視觀察下以複數個氣體流路195朝向徑向RD外方延伸成放射狀的方式來形成氣體流入口193以及氣體流路195。例如
亦可在俯視觀察下以一個氣體流路195朝向徑向RD外方延伸的方式來形成氣體流路口193以及氣體流路195。氣體流出口191、氣體流入口193以及氣體流路195之各自的數目既可為一個又可為複數個。又,遮蔽部19亦可對應複數個杯體部11之形狀而具有噴射角度不同的複數個氣體流出口191。更且,亦可相應於杯體部11之數目而變更氣體流出口191之數目。
(1) In Embodiment 1 (including the first modification to the fourth modification) and Embodiment 2 described with reference to FIGS. 2 to 10, as long as the gas can flow out from the
(2)在參照圖7所說明的實施形態1之第二變化例中,只要能從氣體流出口191流出朝向杯體部11之內壁面110的氣體AR,氣體供給機構35亦可不具有風扇31。
(2) In the second modification of the first embodiment described with reference to FIG. 7, as long as the gas AR can flow out from the
(3)在參照圖10所說明的實施形態2中,遮蔽部19B亦可具有參照圖8所說明的遮蔽部19之遮蔽板19a以及軸部19b。在此情況下,從圖11所顯示的處理液噴嘴91之複數個側面噴射口371b所噴射的氣體會流入至圖8所顯示的氣體流入口193。在此情況下,氣體供給機構37係相當於「氣體供給部」之一例。
(3) In the second embodiment described with reference to FIG. 10, the shielding
(4)在參照圖2至圖10所說明的實施形態1(包含第一變化例至第四變化例)以及實施形態2中,遮蔽板19a亦可構成對應於杯體部11之形狀而可變動氣體流出口191之方向。又,杯體移動機構15亦可使杯體部11上下擺動。在此情況下,能夠使已附著於杯體部11之內壁面110的液滴LQ更有效地流下。
(4) In Embodiment 1 (including the first modification to the fourth modification) and Embodiment 2 described with reference to FIGS. 2 to 10, the shielding
本發明係關於一種基板處理裝置以及基板處理方法,且具有產業可利用性。 The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability.
1:基板處理裝置 1: Substrate processing equipment
3:腔室 3: chamber
3a:頂板部 3a: Top plate
5:基板保持部 5: Board holding part
7:基板旋轉部 7: Substrate rotating part
9:處理液供給部 9: Treatment liquid supply part
11:杯體部 11: Cup body
15:杯體移動機構 15: Cup moving mechanism
17:排出埠口 17: discharge port
19:遮蔽部 19: Shading part
19a:遮蔽板 19a: shielding plate
19b:軸部 19b: Shaft
21:遮蔽部動作機構 21: Shading part action mechanism
21a:遮蔽部移動機構 21a: Moving mechanism of shielding part
21b:遮蔽部旋轉機構 21b: Shading part rotation mechanism
22:氣體供給機構(氣體供給部) 22: Gas supply mechanism (gas supply part)
24:風扇過濾器單元 24: Fan filter unit
51:旋轉基座 51: Rotating base
53:夾緊構件 53: Clamping member
71:馬達 71: Motor
73:軸 73: Axis
91:處理液噴嘴(流通部) 91: Treatment liquid nozzle (circulation part)
93:處理液供給機構 93: Treatment liquid supply mechanism
110:內壁面 110: inner wall
191:氣體流出口 191: Gas Outlet
AD:軸向 AD: axial
AX:中心軸 AX: central axis
GP:間隙 GP: Gap
RD:徑向 RD: radial
Sb:孔部 Sb: Hole
W:基板 W: substrate
Wa:上表面 Wa: upper surface
Claims (19)
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