TWI725657B - Plasma etching device - Google Patents

Plasma etching device Download PDF

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TWI725657B
TWI725657B TW108145240A TW108145240A TWI725657B TW I725657 B TWI725657 B TW I725657B TW 108145240 A TW108145240 A TW 108145240A TW 108145240 A TW108145240 A TW 108145240A TW I725657 B TWI725657 B TW I725657B
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reaction chamber
dielectric window
reaction
air inlet
plasma etching
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TW108145240A
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TW202025220A (en
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左濤濤
連增迪
狄 吳
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大陸商中微半導體設備（上海）股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本發明公開了一種電漿蝕刻裝置，包括：反應室，用於容納反應氣體；介電窗，其設置於反應室頂部；邊緣環，其固定於反應室和介電窗之間；介電窗和邊緣環用於真空密封反應室；進氣系統，其用於向反應室內通入反應氣體，其包括設置在介電窗的中心區域上的第一進氣通道，和環繞設置在介電窗的邊緣區域上的第二進氣通道，第二進氣通道使得反應氣體從上向下穿過介電窗，被反應室內的邊緣環阻擋後向反應室內中心區域擴散。本發明解決了由於反應氣體是腐蝕性氣體時對設置在邊緣環內部放入側壁進氣通道腐蝕產生污染物，污染物隨著反應氣體進入反應室內，導致反應室內的晶圓被污染的問題。 The invention discloses a plasma etching device, comprising: a reaction chamber for containing reaction gas; a dielectric window, which is arranged on the top of the reaction chamber; an edge ring, which is fixed between the reaction chamber and the dielectric window; and the dielectric window And the edge ring is used to vacuum seal the reaction chamber; the air inlet system is used to pass the reaction gas into the reaction chamber, which includes a first air inlet channel arranged on the central area of the dielectric window, and surrounding the dielectric window The second air inlet channel on the edge area of the reaction chamber, the second air inlet channel allows the reaction gas to pass through the dielectric window from top to bottom, is blocked by the edge ring in the reaction chamber, and diffuses toward the center area of the reaction chamber. The invention solves the problem that pollutants are generated by corroding the side wall air inlet channels arranged inside the edge ring when the reaction gas is corrosive, and the pollutants enter the reaction chamber with the reaction gas, causing the wafer in the reaction chamber to be contaminated.

Description

電漿蝕刻裝置 Plasma etching device

本發明涉及半導體加工製程，特別涉及一種電漿蝕刻裝置。 The invention relates to a semiconductor processing process, in particular to a plasma etching device.

電感耦合電漿(Inductively Coupled Plasma，簡稱ICP)蝕刻裝置廣泛用於電漿蝕刻(也稱乾式蝕刻)等製程。其中，電漿蝕刻的原理為：反應氣體在電場的激發下，被電離而產生電漿，由於電漿中包含電子、離子、以及激發態的原子、分子和自由基等活性粒子，這些活性粒子可以與待蝕刻材料發生反應，從而實現對待蝕刻基板的圖案化。 Inductively Coupled Plasma (ICP) etching devices are widely used in processes such as plasma etching (also called dry etching). Among them, the principle of plasma etching is: the reactive gas is ionized under the excitation of an electric field to generate plasma. Since the plasma contains electrons, ions, and active particles such as excited atoms, molecules, and free radicals, these active particles It can react with the material to be etched, thereby realizing the patterning of the substrate to be etched.

現有技術中的電感耦合電漿蝕刻裝置，包括反應室、介電窗和邊緣環，介電窗和邊緣環對反應室進行真空密封，邊緣環位於介電窗和反應室之間；該電感耦合電漿裝置還包括：進氣系統，包括設置在該介電窗的中心區域上的進氣通道，設置在邊緣環內部的側壁進氣通道以及設置在反應室外部的反應氣體源，該進氣系統用於向反應室通入反應氣體。 The inductively coupled plasma etching device in the prior art includes a reaction chamber, a dielectric window and an edge ring. The dielectric window and the edge ring vacuum seal the reaction chamber, and the edge ring is located between the dielectric window and the reaction chamber; the inductive coupling The plasma device further includes: an air intake system, including an air intake channel arranged on the central area of the dielectric window, a side wall air intake channel arranged inside the edge ring, and a reaction gas source arranged outside the reaction chamber. The system is used to pass reaction gas into the reaction chamber.

介電窗上方設有線圈(coil)，其外接射頻電源，射頻電源用於向線圈內通入射頻電流，以使線圈產生變化的磁場，該變化的磁場可感應出電場，電場透過介電窗使通入反應室內部的反應氣體電離而產生電漿，進而對置於反應腔內的晶圓進行處理。 A coil is provided above the dielectric window, which is externally connected to a radio frequency power supply. The radio frequency power supply is used to pass a radio frequency current into the coil to cause the coil to generate a changing magnetic field. The changing magnetic field can induce an electric field, which passes through the dielectric window. The reaction gas passing into the reaction chamber is ionized to generate plasma, and then the wafers placed in the reaction chamber are processed.

研究發現，由於邊緣環使用鋁合金材料，並且進行了陽極氧化處理。邊緣環(liner)在使用過程中，需要通過內部設置的加熱器加熱到攝氏120度。如果傳輸的反應氣體是Cl2，極易造成該側壁進氣通道被腐蝕，產生AlCl3。AlCl3進入反應室後，又會沉積在反應室中、靜電吸盤(ESC)表面或靜電吸盤上的晶圓造成污染。 The study found that the edge ring uses aluminum alloy material and has been anodized. During use, the liner needs to be heated to 120 degrees Celsius by an internal heater. If the reactant gas transmitted is Cl 2 , it is very easy to cause corrosion of the side wall inlet channel, resulting in AlCl 3 . After AlCl 3 enters the reaction chamber, it will be deposited in the reaction chamber, the surface of the electrostatic chuck (ESC), or the wafer on the electrostatic chuck to cause contamination.

本發明的目的是提供一種電漿蝕刻裝置，通過將電漿蝕刻裝置的進氣系統中的側壁進氣通道設置在介電窗的邊緣處，使得反應氣體不經過邊緣環內部，解決了由於反應氣體是腐蝕性氣體時對設置在邊緣環內部放入側壁進氣通道腐蝕產生污染物，污染物隨著反應氣體進入反應室內，導致反應室內的晶圓被污染的問題。 The object of the present invention is to provide a plasma etching device, by arranging the side wall air inlet channel in the air inlet system of the plasma etching device at the edge of the dielectric window, so that the reaction gas does not pass through the inside of the edge ring. When the gas is a corrosive gas, pollutants are generated by corroding the side wall air inlet channels arranged inside the edge ring, and the pollutants enter the reaction chamber with the reaction gas, causing the problem of contamination of wafers in the reaction chamber.

為了解決上述問題，本發明通過以下技術方案實現： In order to solve the above problems, the present invention is implemented through the following technical solutions:

一種電漿蝕刻裝置，包括：反應室，用於容納反應氣體；介電窗，其設置於反應室頂部；邊緣環，其固定於反應室和介電窗之間；介電窗和邊緣環用於真空密封反應室；進氣系統，其用於向反應室內通入反應氣體，其包括設置在介電窗的中心區域上的第一進氣通道，和環繞設置在介電窗的邊緣區域上的第二進氣通道，第二進氣通道使得反應氣體從上向下穿過介電窗，被反應室內的邊緣環阻擋後向反應室內中心區域擴散。 A plasma etching device includes: a reaction chamber for containing reaction gas; a dielectric window, which is arranged on the top of the reaction chamber; an edge ring, which is fixed between the reaction chamber and the dielectric window; the dielectric window and the edge ring are used In a vacuum sealed reaction chamber; an air inlet system, which is used to pass reaction gas into the reaction chamber, which includes a first air inlet channel arranged on the central area of the dielectric window, and a surrounding area arranged on the edge area of the dielectric window The second air inlet channel allows the reaction gas to pass through the dielectric window from top to bottom, is blocked by the edge ring in the reaction chamber, and diffuses toward the central area of the reaction chamber.

進一步的，還包括，用於固定待處理晶圓的靜電卡盤，其位於反應室底部。 Further, it also includes an electrostatic chuck for fixing the wafer to be processed, which is located at the bottom of the reaction chamber.

進一步的，邊緣環包括：連接段和延伸段，連接段位於反應室和介電窗之間，其一端分別與反應室側壁頂部和介電窗密封連接，其另一端與介 電窗之間具有縫隙，使得通過第二進氣通道輸送的反應氣體沿縫隙流入反應室內部；延伸段位於反應室內部，從連接段內側向下延伸，圍繞待處理晶圓上方的反應空間。 Further, the edge ring includes: a connecting section and an extension section, the connecting section is located between the reaction chamber and the dielectric window, one end of which is respectively sealed to the top of the reaction chamber side wall and the dielectric window, and the other end is connected to the dielectric window. There is a gap between the electrical windows, so that the reaction gas delivered through the second air inlet channel flows into the reaction chamber along the gap; the extension section is located inside the reaction chamber, extends downward from the inside of the connection section, and surrounds the reaction space above the wafer to be processed.

進一步的，邊緣環採用鋁合金製成，其外表面塗覆有陶瓷材料。 Further, the edge ring is made of aluminum alloy, and its outer surface is coated with ceramic material.

進一步的，連接段的另一端與介電窗之間具有向反應室內傾的內傾角，使得通過第二進氣通道輸送的反應氣體經由內傾角輸送至反應室內。 Further, there is an inclination angle between the other end of the connecting section and the dielectric window toward the reaction chamber, so that the reaction gas delivered through the second air inlet channel is transported into the reaction chamber through the inclination angle.

進一步的，邊緣環採用陽極氧化的鋁合金製成，並且其外表面塗覆有陶瓷材料。 Further, the edge ring is made of anodized aluminum alloy, and its outer surface is coated with ceramic material.

進一步的，進氣系統還包括環繞設置在介電窗上的且靠近介電窗邊緣的反應氣體緩存腔，第二進氣通道連通反應氣體緩存腔和反應室。 Further, the air intake system further includes a reaction gas buffer cavity arranged around the dielectric window and close to the edge of the dielectric window, and the second air inlet passage communicates with the reaction gas buffer cavity and the reaction chamber.

進一步的，進氣系統還包括反應氣體源，以及與反應氣體源連接的氣體分離器，其用於將反應氣體源輸出的反應氣體分為兩路，一路通過第一進氣通道輸送至反應室內，另一路輸送至反應氣體緩存腔內部，通過第二進氣通道輸送至反應室內。 Further, the air inlet system further includes a reaction gas source, and a gas separator connected to the reaction gas source, which is used to divide the reaction gas output from the reaction gas source into two paths, which are transported to the reaction chamber through the first inlet channel. , The other way is delivered to the inside of the reaction gas buffer chamber, and delivered to the reaction chamber through the second air inlet channel.

進一步的，還包括：若干個線圈，其設置於介電窗頂部且位於反應室外部，並環繞第一進氣通道設置。 Further, it further includes: a plurality of coils arranged on the top of the dielectric window and outside the reaction chamber, and arranged around the first air inlet channel.

進一步的，還包括射頻電源，射頻電源外接線圈，射頻電源用於向線圈內通入射頻電流，以使線圈產生變化的磁場，該變化的磁場可感應出電場，電場透過介電窗使得通入反應室內部的反應氣體電離產生電漿。 Further, it also includes a radio frequency power supply. The radio frequency power supply is external to the coil. The radio frequency power supply is used to pass radio frequency current into the coil to cause the coil to generate a changing magnetic field. The changed magnetic field can induce an electric field. The electric field passes through the dielectric window to allow access The reaction gas inside the reaction chamber ionizes to generate plasma.

進一步的，還包括，用於固定待處理晶圓的靜電卡盤，其位於反應室底部。 Further, it also includes an electrostatic chuck for fixing the wafer to be processed, which is located at the bottom of the reaction chamber.

本發明具有以下技術效果： The invention has the following technical effects:

本發明通過將電漿蝕刻裝置的進氣系統中的側壁進氣通道設置在介電窗的邊緣處，使得反應氣體不經過邊緣環內部，解決了由於反應氣體是 腐蝕性氣體時對設置在邊緣環內部放入側壁進氣通道腐蝕產生污染物，污染物隨著反應氣體進入反應室內，導致反應室內的晶圓被污染的問題。 In the present invention, the side wall air inlet channel in the air inlet system of the plasma etching device is arranged at the edge of the dielectric window, so that the reaction gas does not pass through the inside of the edge ring, and solves the problem that the reaction gas is When corrosive gas is placed inside the edge ring, it will cause pollutants to be corroded into the side wall air inlet channel. The pollutants enter the reaction chamber along with the reaction gas, causing the problem of contamination of wafers in the reaction chamber.

100:氣體分離器 100: Gas separator

200:第一進氣通道 200: The first intake channel

201:反應氣體緩存腔殼體 201: Reactive gas buffer chamber shell

202:反應氣體緩存腔 202: Reactive gas buffer cavity

203:第二進氣通道 203: The second intake channel

300:反應室 300: reaction chamber

400:邊緣環 400: edge ring

401:連接段 401: connection segment

402:延伸段 402: Extension

500:介電窗 500: Dielectric window

600:線圈 600: Coil

700:基座 700: Pedestal

800:晶圓 800: Wafer

第1圖為本發明一實施例提供的電漿蝕刻裝置及其進氣系統的結構示意圖。 FIG. 1 is a schematic structural diagram of a plasma etching device and its air intake system provided by an embodiment of the present invention.

以下結合附圖，通過詳細說明一個較佳的具體實施例，對本發明做進一步闡述。 Hereinafter, in conjunction with the accompanying drawings, a preferred specific embodiment is described in detail to further illustrate the present invention.

如第1圖所示，本實施例提供的一種電漿蝕刻裝置，包括：反應室300，用於容納反應氣體；需要說明的是，反應室300形狀並非限定於圓筒狀，例如也可以是角筒狀。介電窗500，其設置於反應室300頂部；介電窗500採用石英玻璃、陶瓷或氧化鋁(AL2O3)等構成。邊緣環400，其位於反應室300和介電窗500之間；介電窗500和邊緣環400用於真空密封反應室300；需要說明的是，不對介電窗500和邊緣環400，以及邊緣環400與反應室300的固定方式做限定，能夠實現對反應室300的真空密封即可。進氣系統，其用於向反應室300內通入反應氣體，其包括設置在介電窗500的中心區域上的第一進氣通道200，和環繞設置在介電窗500的邊緣區域上的第二進氣通道203。第二進氣通道可以是開設在介電窗上的多個氣孔。 As shown in Figure 1, a plasma etching apparatus provided by this embodiment includes: a reaction chamber 300 for containing reaction gas; it should be noted that the shape of the reaction chamber 300 is not limited to a cylindrical shape, for example, it may be Angular cylindrical shape. The dielectric window 500 is set on the top of the reaction chamber 300; the dielectric window 500 is made of quartz glass, ceramic, or alumina (AL 2 O 3 ). The edge ring 400 is located between the reaction chamber 300 and the dielectric window 500; the dielectric window 500 and the edge ring 400 are used for vacuum sealing the reaction chamber 300; it should be noted that the dielectric window 500 and the edge ring 400, and the edge The fixing method of the ring 400 and the reaction chamber 300 is limited, and the vacuum sealing of the reaction chamber 300 can be achieved. The air inlet system, which is used to pass reaction gas into the reaction chamber 300, includes a first air inlet channel 200 arranged on the central area of the dielectric window 500, and a surrounding area arranged on the edge area of the dielectric window 500 The second intake passage 203. The second air inlet passage may be a plurality of air holes opened on the dielectric window.

還包括：用於固定待處理晶圓800的基座700，其位於反應室300底部。 It also includes a susceptor 700 for fixing the wafer 800 to be processed, which is located at the bottom of the reaction chamber 300.

邊緣環400進一步包括：連接段401和延伸段402，連接段401位於反應室300和介電窗500之間，其一端分別與反應室300和介電窗500密封連接，其另一端與介電窗500之間具有縫隙，使得通過第二進氣通道203輸送的反應氣體沿該縫隙流入反應室300內部；延伸段402位於反應室300內部，靠近反應室300側壁，延伸段402位於反應室300內部，圍繞基座700和待處理晶圓800，用於對晶圓800邊緣區域電場和氣流和溫度進行調節。 The edge ring 400 further includes a connecting section 401 and an extension section 402. The connecting section 401 is located between the reaction chamber 300 and the dielectric window 500. One end of the connecting section 401 is sealed to the reaction chamber 300 and the dielectric window 500, and the other end is connected to the dielectric window 500. There is a gap between the windows 500, so that the reaction gas delivered through the second gas inlet channel 203 flows into the reaction chamber 300 along the gap; the extension section 402 is located inside the reaction chamber 300, close to the side wall of the reaction chamber 300, and the extension section 402 is located in the reaction chamber 300 Inside, surrounding the susceptor 700 and the wafer 800 to be processed, it is used to adjust the electric field, air flow and temperature in the edge area of the wafer 800.

邊緣環400採用鋁合金和/或採用陽極氧化的鋁合金製成，其外表面塗覆有陶瓷材料。連接段401的另一端與介電窗500之間具有向反應室300內傾的內傾角，使得通過第二進氣通道203輸送的反應氣體經由該內傾角(即連接段401的另一端與介電窗500之間的夾角)輸送至反應室300內。此外，經過邊緣環400阻擋向下流動路徑後，反應氣體的流動方向被折向反應腔內的中心區域，使得反應氣體既能在邊緣區域被充分解離形成高濃度等離子，也能向中心擴散，更多等離子能夠到達位於反應腔中心下方的基片，避免在邊緣區域形成的等離子直接被位於反應腔底部基座周圍的排氣通道抽走。 The edge ring 400 is made of aluminum alloy and/or anodized aluminum alloy, and its outer surface is coated with a ceramic material. The other end of the connecting section 401 and the dielectric window 500 have an inclination angle toward the inside of the reaction chamber 300, so that the reaction gas delivered through the second inlet passage 203 passes through the inward inclination angle (that is, the other end of the connecting section 401 and the dielectric window 500 The angle between the windows 500) is transported into the reaction chamber 300. In addition, after passing through the edge ring 400 to block the downward flow path, the flow direction of the reaction gas is turned toward the central area of the reaction chamber, so that the reaction gas can be fully dissociated in the edge area to form high-concentration plasma, and it can also diffuse toward the center. More plasma can reach the substrate located below the center of the reaction chamber, preventing the plasma formed in the edge area from being directly drawn away by the exhaust channel located around the base of the reaction chamber.

本發明中由於反應氣體流動過程中只會接觸陶瓷材料(石英)製成的介電窗和塗覆在邊緣環400上表面的陶瓷材料(氧化鋁、氧化釔等)，不會接觸邊緣環400或者反應腔側壁的金屬，所以不會與這些金屬反應形成污染物，污染反應腔內的基片。 In the present invention, because the reactive gas only contacts the dielectric window made of ceramic material (quartz) and the ceramic material (alumina, yttria, etc.) coated on the upper surface of the edge ring 400 during the flow of the reaction gas, it does not touch the edge ring 400 Or the metal on the side wall of the reaction chamber will not react with these metals to form pollutants and contaminate the substrate in the reaction chamber.

該進氣系統還包括環繞設置在介電窗500上的且靠近介電窗500邊緣的用於形成反應氣體緩存腔202的反應氣體緩存腔殼體201。其與介電窗表面配合組成反應氣體緩存腔202，第二進氣通道203連通反應氣體緩存腔202和反應室300。該進氣系統還包括反應氣體源，與該反應氣體源連接的氣體分離器100，其用於將該反應氣體源輸出的反應氣體分為兩路，一路通過第一進氣通道 200輸送至反應室300內，另一路輸送至反應氣體緩存腔202內部，通過第二進氣通道203輸送至反應室300內。 The air intake system further includes a reaction gas buffer chamber housing 201 arranged around the dielectric window 500 and near the edge of the dielectric window 500 for forming a reaction gas buffer chamber 202. It cooperates with the surface of the dielectric window to form a reaction gas buffer chamber 202, and the second air inlet channel 203 communicates with the reaction gas buffer chamber 202 and the reaction chamber 300. The gas inlet system also includes a reactive gas source, and a gas separator 100 connected to the reactive gas source is used to divide the reactive gas output from the reactive gas source into two paths, one path passing through the first inlet passage 200 is transported into the reaction chamber 300, and the other way is transported to the inside of the reaction gas buffer chamber 202, and is transported into the reaction chamber 300 through the second air inlet channel 203.

該電漿蝕刻裝置還包括：若干個線圈(coil)600，其設置於介電窗500頂部且位於反應室300外部，並環繞第一進氣通道200設置，線圈600可以是包含若干匝多邊形的形狀，也可以是包含若干匝同心圓的形狀。在此不做限定，能產生感應電場即可。線圈600可採用例如銅、鋁、不銹鋼等的導體構成。 The plasma etching device further includes: a number of coils 600, which are arranged on the top of the dielectric window 500 and outside the reaction chamber 300, and are arranged around the first air inlet passage 200. The coil 600 may be a polygonal shape with several turns. The shape can also be a shape that includes several turns of concentric circles. It is not limited here, as long as the induced electric field can be generated. The coil 600 may be formed of a conductor such as copper, aluminum, stainless steel, or the like.

射頻電源(圖中未示出)，該射頻電源外接線圈600，該射頻電源用於向線圈600內通入射頻電流，以使線圈600產生變化的磁場，該變化的磁場可感應出電場，電場透過介電窗500使得通入反應室300內部的反應氣體電離產生電漿。 A radio frequency power supply (not shown in the figure), the radio frequency power supply is externally connected to the coil 600. The radio frequency power supply is used to pass a radio frequency current into the coil 600 so that the coil 600 generates a varying magnetic field. The varying magnetic field can induce an electric field. Through the dielectric window 500, the reaction gas passing into the reaction chamber 300 is ionized to generate plasma.

綜上所述，本發明通過將電漿蝕刻裝置的進氣系統中的側壁進氣通道設置在介電窗的邊緣處，使得反應氣體不經過邊緣環內部，解決了由於反應氣體是腐蝕性氣體時對設置在邊緣環內部放入側壁進氣通道腐蝕產生污染物，污染物隨著反應氣體進入反應室內，導致反應室內的晶圓被污染的問題。 In summary, the present invention solves the problem that the reaction gas is corrosive gas by arranging the side wall gas inlet channel in the gas inlet system of the plasma etching device at the edge of the dielectric window so that the reaction gas does not pass through the inside of the edge ring. At times, pollutants are generated by corrosion of the side wall air inlet channels arranged inside the edge ring, and the pollutants enter the reaction chamber with the reaction gas, causing the problem of contamination of the wafers in the reaction chamber.

儘管本發明的內容已經通過上述較佳的實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. After those skilled in the art have read the above content, various modifications and alternatives to the present invention will be obvious. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

100:氣體分離器 100: Gas separator

200:第一進氣通道 200: The first intake channel

201:反應氣體緩存腔殼體 201: Reactive gas buffer chamber shell

202:反應氣體緩存腔 202: Reactive gas buffer cavity

203:第二進氣通道 203: The second intake channel

300:反應室 300: reaction chamber

400:邊緣環 400: edge ring

401:連接段 401: connection segment

402:延伸段 402: Extension

500:介電窗 500: Dielectric window

600:線圈 600: Coil

700:基座 700: Pedestal

800:晶圓 800: Wafer

Claims (10)

一種電漿蝕刻裝置，包括：一反應室，用於容納一反應氣體；一介電窗，設置於該反應室頂部；一邊緣環，固定於該反應室和該介電窗之間，該介電窗和該邊緣環用於真空密封該反應室；該邊緣環與該介電窗之間形成一縫隙；以及一進氣系統，用於向該反應室內通入該反應氣體，該進氣系統包括：一第一進氣通道，設置在該介電窗的中心區域上；以及一第二進氣通道，環繞設置在該介電窗的邊緣區域上，該第二進氣通道使得該反應氣體從上向下穿過該介電窗，被該反應室內的該邊緣環阻擋後沿該縫隙流入該反應室內部并向該反應室內中心區域擴散。 A plasma etching device includes: a reaction chamber for accommodating a reaction gas; a dielectric window arranged on the top of the reaction chamber; an edge ring fixed between the reaction chamber and the dielectric window, the dielectric window The electric window and the edge ring are used for vacuum sealing the reaction chamber; a gap is formed between the edge ring and the dielectric window; and an air inlet system for introducing the reaction gas into the reaction chamber, the air inlet system It includes: a first air inlet passage arranged on the central area of the dielectric window; and a second air inlet passage arranged on the edge area of the dielectric window around, the second air inlet passage making the reaction gas It passes through the dielectric window from top to bottom, is blocked by the edge ring in the reaction chamber, flows into the interior of the reaction chamber along the gap, and diffuses toward the central area of the reaction chamber. 如申請專利範圍第1項所述的電漿蝕刻裝置，進一步包括用於固定一待處理晶圓的一靜電卡盤，該靜電卡盤位於該反應室底部。 The plasma etching device according to the first item of the scope of patent application further includes an electrostatic chuck for fixing a wafer to be processed, and the electrostatic chuck is located at the bottom of the reaction chamber. 如申請專利範圍第2項所述的電漿蝕刻裝置，其中該邊緣環包括一連接段和一延伸段，該連接段位於該反應室和該介電窗之間，其一端分別與該反應室側壁頂部和該介電窗密封連接，其另一端與該介電窗之間具有一縫隙，使得通過該第二進氣通道輸送的該反應氣體沿該縫隙流入該反應室內部；該延伸段位於該反應室內部，從該連接段內側向下延伸，圍繞該待處理晶圓上方的反應空間。 The plasma etching device according to claim 2, wherein the edge ring includes a connecting section and an extension section, the connecting section is located between the reaction chamber and the dielectric window, and one end of the connecting section is respectively connected to the reaction chamber The top of the side wall is sealed to the dielectric window, and a gap is formed between the other end of the side wall and the dielectric window, so that the reaction gas delivered through the second air inlet channel flows into the interior of the reaction chamber along the gap; the extension section is located The inside of the reaction chamber extends downward from the inner side of the connecting section and surrounds the reaction space above the wafer to be processed. 如申請專利範圍第1或2項所述的電漿蝕刻裝置，其中該邊緣環採 用鋁合金製成，其外表面塗覆有陶瓷材料。 The plasma etching device as described in item 1 or 2 of the scope of patent application, wherein the edge ring adopts It is made of aluminum alloy, and its outer surface is coated with ceramic material. 如申請專利範圍第3項所述的電漿蝕刻裝置，其中該連接段的另一端與該介電窗之間具有向該反應室內傾的一內傾角。 According to the plasma etching device described in claim 3, the other end of the connecting section and the dielectric window have an inclination angle toward the reaction chamber. 如申請專利範圍第4項所述的電漿蝕刻裝置，其中該邊緣環採用陽極氧化的鋁合金製成，並且其外表面塗覆有陶瓷材料。 According to the plasma etching device described in item 4 of the scope of patent application, the edge ring is made of anodized aluminum alloy, and its outer surface is coated with a ceramic material. 如申請專利範圍第1項所述的電漿蝕刻裝置，其中該進氣系統還包括環繞設置在該介電窗上的且靠近該介電窗邊緣的一反應氣體緩存腔，該第二進氣通道連通該反應氣體緩存腔和該反應室。 The plasma etching device according to the first item of the scope of patent application, wherein the air intake system further includes a reactive gas buffer chamber arranged on the dielectric window and close to the edge of the dielectric window, and the second air intake The channel communicates with the reaction gas buffer cavity and the reaction chamber. 如申請專利範圍第7項所述的電漿蝕刻裝置，其中該進氣系統還包括一反應氣體源，以及與該反應氣體源連接的一氣體分離器，其用於將該反應氣體源輸出的一反應氣體分為兩路，一路通過該第一進氣通道輸送至該反應室內，另一路輸送至該反應氣體緩存腔內部，通過該第二進氣通道輸送至該反應室內。 According to the plasma etching device described in item 7 of the scope of patent application, the gas inlet system further includes a reactive gas source, and a gas separator connected to the reactive gas source, which is used to output the reactive gas source A reaction gas is divided into two paths, one path is delivered to the reaction chamber through the first air inlet channel, the other path is delivered to the interior of the reaction gas buffer chamber, and delivered to the reaction chamber through the second air inlet channel. 如申請專利範圍第1項所述的電漿蝕刻裝置，進一步包括若干個線圈，其設置於該介電窗頂部且位於該反應室外部，並環繞該第一進氣通道設置。 The plasma etching device as described in item 1 of the scope of patent application further includes a plurality of coils arranged on the top of the dielectric window and outside the reaction chamber, and arranged around the first air inlet channel. 如申請專利範圍第9項所述的電漿蝕刻裝置，進一步包括射頻電源，該射頻電源外接該若干個線圈，該射頻電源用於向該若干個線圈內通入射頻電流，以使該若干個線圈產生一變化的磁場，該變化的磁場可感應出一電場，該電場透過該介電窗使得通入該反應室內部的該反應氣體電離產生電漿。 For example, the plasma etching device described in item 9 of the scope of patent application further includes a radio frequency power supply, the radio frequency power supply is externally connected to the plurality of coils, and the radio frequency power supply is used to pass radio frequency current into the plurality of coils so that the plurality of coils The coil generates a changing magnetic field, the changing magnetic field can induce an electric field, and the electric field penetrates the dielectric window to ionize the reaction gas passing into the reaction chamber to generate plasma.
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