TWI394200B - Method and system for introducing process fluid through a chamber component - Google Patents

Description

Method and system for introducing a treatment fluid via a chamber member

The present invention relates to a method and system for introducing a treatment fluid via a chamber member, and more particularly to a method and system for introducing a treatment fluid via a chamber member in a treatment system.

In the semiconductor industry, the fabrication of integrated circuits (ICs) typically utilizes plasma, the surface chemistry that is generated within the processing chamber and assists in removing material from the substrate and depositing the material on the substrate. In general, we can form a plasma in a processing chamber under vacuum conditions by heating electrons in the presence of an electric field to an energy sufficient to maintain a free collision with the supplied process gas. In addition, the heated electrons may have sufficient energy to sustain the dissociation collision, and thus select a particular gas group under predetermined conditions (eg, chamber pressure, gas flow rate, etc.) to produce a population of specific treatments suitable for execution within the chamber (eg, Charged species and chemically reactive species that remove the etch process of the material from the substrate or the deposition process that adds the material to the substrate. In semiconductor manufacturing, there are many techniques for generating plasma, including but not limited to capacitively coupled plasma (CCP) systems, inductively coupled plasma (ICP) systems, and electron cyclotron resonance. (ECR, electron cyclotron resonance) plasma system, spiral wave plasma system, surface wave plasma system, slotted planar antenna (SPA) plasma system, and the like. The plasma is formed by the interaction between the supplied process gas and electromagnetic (EM) that is transmitted at the frequency of the radio frequency (RF) or the frequency spectrum of the microwave. The commonality of all of these systems is the use of dielectric members through which an electric field can be generated. Furthermore, it is desirable to introduce process gases via these dielectric members while avoiding electrical breakdown or discharge within these dielectric members.

The present invention relates to a method and system for introducing a treatment fluid via a chamber member. Further, a method and system for introducing a treatment fluid into a plasma processing system via a chamber member is provided.

Furthermore, a method and system for introducing a treatment fluid via a dielectric member is provided. Further, a method and system for introducing a treatment fluid via a dielectric member in the presence of an electric field is provided.

In accordance with an embodiment, a method and system for introducing a treatment fluid into a treatment system via a chamber member is illustrated. The chamber member includes a chamber member having a first surface on a supply side of the chamber member and a second surface on a processing side of the chamber member, wherein the treatment side is relative to the supply side. Further, the chamber member includes a helical conduit extending from the supply side to the treatment side through the chamber member, wherein the helical conduit includes an inlet for receiving a treatment fluid and an outlet for dispensing the treatment fluid .

In accordance with another embodiment, a method of making a conduit through a chamber component is illustrated, comprising: forming an opening that extends from a supply side on a chamber component to a processing side on the chamber component and through the chamber component, The opening has an inner surface; an inset member having an outer surface is formed, and wherein the surface is adapted to engage the inner surface of the opening; more than one groove is formed in the outer surface of the inlay member to allow each of the more than one groove The trough includes an inlet formed on the supply side and an outlet formed on the processing side; and the embedding element is embedded within the opening of the chamber element.

In accordance with another embodiment, a processing system is illustrated comprising: a processing chamber including a processing space; a process gas supply system in fluid communication with the processing chamber and for introducing a process gas stream into the processing chamber; a gas distribution system coupled to the processing a chamber for receiving the process gas stream through the inlet and distributing the process gas stream within the processing space, wherein the gas distribution system includes a gas injection device coupled to the inlet, and wherein the gas injection device includes a gas injection device extending from the inlet end to the outlet end a spiral conduit; a stage coupled to the processing chamber and configured to support a substrate positioned in the processing chamber for exposure to the processing gas; and a vacuum pumping system coupled to the processing chamber and for evacuating the processing chamber.

In the following description for purposes of explanation and not limitation, specific details are set forth, such as the specific geometry of the vacuum or plasma processing system, and the description of the various components. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

In material processing methodology, plasma is typically used to promote surface chemistry on a substrate to facilitate removal of material from the substrate or to facilitate formation of a film formation reaction on the substrate to deposit the material. During etching of the substrate, the plasma can be used to generate reactive chemicals that are suitable for reacting with certain materials on the surface of the substrate. Furthermore, during etching of the substrate, the plasma can be used to produce charged species that can be used to deliver energy to the surface reaction on the substrate.

According to an example, the pattern etching comprises applying a thin layer of photosensitive material, such as a photoresist, to the upper surface of the substrate, the thin layer of photosensitive material then being patterned to provide a mask for transferring the pattern to the location The underlying film on the substrate. Patterning of the photosensitive material typically involves, for example, using a lithography etching system, exposing the photosensitive material to a geometric pattern of electromagnetic (EM) radiation, and then using a developing solvent to remove the portion of the photosensitive material that is illuminated (this is a positive light) The case of resistance, or the part that is not irradiated (this is the case of negative photoresist).

Still referring to this example, as shown in FIGS. 1A through 1C, a mask comprising a photosensitive layer 3 having a pattern 2 (eg, patterned photoresist) can be used to transfer a pattern of features to a material such as film 4 on substrate 5. The film may, for example, be a layer of polycrystalline germanium (polycrystalline germanium). The pattern 2 is transferred to the film 4, for example using plasma assisted etching, to form features 6, such as a gate structure, and after etching, the mask 3 is removed.

Traditionally, plasma-assisted etching process includes the use of corrosive process gas, for example, a halogen-containing gas (e.g. _{HF, HCl, HBr, Cl 2} , NF 3, C x F y, C x F y H z , etc.). In addition, the use of such gases in the presence of plasma can result in highly aggressive chemicals that can then attack and corrode the surface of the chamber. Thus, plasma processing systems are typically protected by thick chamber members that are resistant to corrosion or contribute to chemicals when corroded, which are not deleterious to the processing circuitry that occurs on the substrate. Again, during plasma formation, electromagnetic power must be coupled through the chamber members, and thus several chamber members can comprise a dielectric material.

According to an embodiment, a plasma processing system 1a is shown in FIG. 2, the system comprising: a plasma processing chamber 10; a substrate carrier 20 on which a substrate 25 to be processed is fixed; and a vacuum pump system 50. The substrate 25 can be a semiconductor substrate, a wafer, a flat panel display, or a liquid crystal display. The plasma processing chamber 10 can be used to promote plasma generation in the processing region 45 located near the surface of the substrate 25. A free gas or gas mixture is introduced via gas distribution system 40 to reduce or minimize contaminants introduced to substrate 25. For known process gas streams, the vacuum pump system 50 can be used to adjust the process pressure. The plasma can be used to produce a material that is specific to the predetermined material treatment, and/or to facilitate removal of material from the exposed surface of the substrate 25. The plasma processing system 1a can be used to process substrates having any desired size, such as a 200 mm substrate, a 300 mm substrate, or a larger substrate.

The substrate 25 can be secured to the substrate stage 20 via a clamping system 28 such as a mechanical clamping system or an electrical clamping system (eg, an electrostatic clamping system). Furthermore, the substrate stage 20 can include a heating system (not shown) or a cooling system (not shown) for adjusting and/or controlling the temperature of the substrate stage 20 and the substrate 25. The heating system or cooling system may comprise a recycle stream of heat transfer fluid that, when cooled, may receive heat from the substrate stage 20 and transfer heat to the heat exchanger system (not shown); When heated, it can transfer heat from the heat exchanger system to the substrate stage 20. In other embodiments, a heating/cooling element such as a resistive heating element, or a thermo-electric heater/cooler may be included in the substrate stage 20 and included in the chamber wall of the plasma processing chamber 10 and in the plasma. Processing in any other component within system 1a.

Additionally, the heat transfer gas may be delivered to the back side of the substrate 25 via the back side gas supply system 26 to improve the gas-gap thermal conductivity between the substrate 25 and the substrate stage 20. When the temperature control of the substrate is required to increase or decrease the temperature, we can use such a system. For example, the backside gas supply system can include a two-zone gas distribution system in which the gas-gap pressure of the helium can be independently varied between the center and the edge of the substrate 25.

In the embodiment shown in FIG. 2, substrate stage 20 can include electrodes through which radio frequency (RF) power can be coupled to the processing plasma in processing region 45. For example, the substrate radio 20 can be electrically biased by the radio frequency voltage via wireless RF power transmitted from the radio frequency generator 30 through any of the impedance matching networks 32 to the substrate stage 20. A wireless radio frequency bias can be used to heat the electrons to form and maintain the plasma. In such a configuration, the system can function as a reactive ion etch (RIE) reactor in which the chamber and the upper gas injection electrode can serve as a ground plane. Typical frequencies for wireless RF biasing can be distributed from about 0.1 MHz to about 100 MHz. Radio frequency systems for plasma processing are well known to those skilled in the art.

Alternatively, wireless radio frequency power is applied to the substrate stage electrodes at multiple frequencies. Moreover, the impedance matching network 32 can improve the transfer of radio frequency power to the plasma within the plasma processing chamber 10 by reducing the reflected power. Match network layout (eg L-type, π- Type, T-type, etc.) and automatic control methods are well known to those skilled in the art.

The vacuum pump system 50 can include a turbo-molecular vacuum pump (TMP) with an evacuation speed of up to about 5,000 liters per second (above) and a gate valve to regulate chamber pressure. In a plasma processing apparatus conventionally used for dry plasma etching, a turbo molecular vacuum pump of 1000 to 3000 liters per second can be utilized. Turbomolecular vacuum pumps can be used for low pressure processing typically less than about 50 mTorr. For high pressure processing (ie greater than about 100 mTorr), mechanical booster pumps and dry rough pumps can be used. Further, means (not shown) for monitoring chamber pressure can be coupled to the plasma processing chamber 10. The pressure measuring device can be, for example, a Type 628B Baratron absolute capacitive vacuum gauge available from MKS Instruments, Inc. (Andover, MA).

The controller 55 includes a microprocessor, a memory, and a digital I/O port that generates a control voltage sufficient to transfer and initiate input to the plasma processing system 1a, as well as from the plasma processing system 1a. Monitor output. Additionally, controller 55 can be coupled to wireless RF generator 30, impedance matching network 32, gas distribution system 40, vacuum pump system 50, and substrate heating/cooling system (not shown), backside gas supply system 26, And/or clamp system 28 and exchange information with it. For example, the program stored in the memory can be used to initiate input to the above-described components of the plasma processing system 1a in accordance with the processing recipe to perform a plasma assisted process on the substrate 25. One of the example of the controller 55 to be available from Dell Corporation, Austin, Texas DELL PRECISION WORKSTATION 610 TM.

The controller 55 can be disposed in proximity to the plasma processing system 1a, or it can be remotely disposed relative to the plasma processing system 1a. For example, controller 55 can exchange data with plasma processing system 1a using a direct connection, an intranet, and/or an internet. The controller 55 can be coupled to, for example, an intranet located at the customer premises (i.e., device manufacturer, etc.), or it can be coupled to, for example, an intranet located at the provider end (i.e., device manufacturer). Alternatively or in addition, controller 55 can be coupled to the internet. Furthermore, another computer (i.e., controller, server, etc.) can use controller 55 via a direct connection, an intranet, and/or the Internet.

In the embodiment shown in FIG. 3, the plasma processing system 1b can be similar to the embodiment of FIG. 2 and includes, in addition to the components described with reference to FIG. 2, a stationary, or mechanical or electrical rotating magnetic field. System 60 to potentially increase plasma density and/or improve plasma processing uniformity. Additionally, controller 55 can be coupled to magnetic field system 60 to adjust the speed of rotation as well as the field strength. The design and implementation of a rotating magnetic field is well known to those skilled in the art.

In the embodiment shown in FIG. 4, the plasma processing system 1c can be similar to the embodiment of FIG. 2 or FIG. 3, and can further include an upper electrode 70 through which wireless RF power can be transmitted through any impedance matching. Network 74 is coupled to this electrode. The frequency of the radio frequency power applied to the upper electrode can be distributed from about 0.1 MHz to about 200 MHz. Furthermore, the frequency for the power applied to the lower electrode can be distributed from about 0.1 MHz to about 100 MHz. In addition, controller 55 is coupled to radio frequency generator 72 and impedance matching network 74 to control radio frequency power application to upper electrode 70. The design and implementation of the upper electrode is well known to those skilled in the art. As shown, the upper electrode 70 and gas distribution system 40 can be designed within the same chamber assembly.

In the embodiment shown in FIG. 5, the plasma processing system 1d can be similar to the embodiment of FIGS. 2 and 3, and can further include an inductive coil 80 that is selectively impedance matched via the radio frequency generator 82. Network 84 is coupled to this coil. Radio frequency power is inductively coupled from the induction coil 80 through a dielectric window (not shown) to the plasma processing region 45. The frequency of the radio frequency power applied to the induction coil 80 can be distributed from about 10 MHz to about 100 MHz. Likewise, the frequency for the power applied to the collet electrodes can be distributed from about 0.1 MHz to about 100 MHz. Additionally, a slotted Faraday barrier (not shown) may be used to reduce the capacitive coupling between the induction coil 80 and the plasma. Additionally, controller 55 can be coupled to wireless RF generator 82 and impedance matching network 84 to control power application to induction coil 80.

In an alternate embodiment, as shown in FIG. 6, the plasma processing system 1e can be similar to the embodiment of FIG. 5, and can further include an induction coil 80' that is in communication with the plasma processing region 45 from above. A "spiral" coil or a "slice" coil is used in a transformer-coupled plasma (TCP) reactor. The design and implementation of an inductively coupled plasma (ICP) source or a transformer coupled plasma (TCP) source is well known to those skilled in the art.

Alternatively, we can form a plasma using electron cyclotron resonance (ECR). In yet another embodiment, the plasma is formed by the emission of a spiral wave. In yet another embodiment, the plasma is formed by propagating surface waves. Each of the above plasma sources is well known to those skilled in the art.

In the embodiment shown in FIG. 7, the plasma processing system 1f can be similar to the embodiment of FIGS. 2 and 3, and can further include a surface wave plasma (SWP) source 80". Surface wave plasma Source 80" may include a slotted antenna, such as a radial line slot antenna (RLSA), to which microwave power may be coupled via microwave generator 82' through any impedance matching network 84'.

In the following description, a gas distribution system is described for introducing a process gas into a processing system via a gas injection device formed in a chamber component. This gas distribution system (shown by reference numeral 40) can be used, for example, in any of the plasma processing systems described in Figures 2-7, or in any of the systems having the systems from Figures 2 through 5. A combined plasma processing system. Again, this gas distribution system can be used, for example, for any substrate processing system that requires the introduction of process gases via chamber elements.

Referring now to Figures 8A, 8B, and 8C, a fluid dispensing system 200 and a method of making the fluid dispensing system 200 are depicted in accordance with an embodiment. Fluid dispensing system 200 is configured to be coupled to the processing chamber and to receive a flow of processing fluid from the processing fluid supply system and to distribute the processing fluid flow within the processing chamber. For example, the treatment fluid can comprise a gas, a liquid, or a multi-phase fluid comprising a solid material (eg, a slurry) suspended in a liquid, a solid material suspended in a gas, or suspended in a liquid. Gas material. Alternatively, for example, the treatment fluid can comprise a solid powder.

The fluid dispensing system 200 includes a chamber component 210 that includes a first surface on the supply side 214 of the chamber component 210 and a second surface on the processing side 216 of the chamber component 210, wherein the processing side is relative to Supply side. The chamber component 210 includes an opening 220 having an inner surface 212 that is formed from the supply side to the processing side through the chamber element 210. The opening 220 can be formed by any of the conventional processing procedures. The chamber component 210 can be fabricated from a conductive material, a non-conductive material, or a semi-conductive material. For example, the chamber component 210 can be fabricated from a metal or metal alloy, such as aluminum or an aluminum alloy. Further, the chamber member 210 may include a protective coating film formed on a surface thereof. For example, the coating film may comprise a ceramic coating film or surface anodization. The chamber element 210 may be fabricated from quartz, tantalum, single crystal germanium, polycrystalline germanium, tantalum nitride, tantalum carbide, carbon, glass graphite, alumina, sapphire, aluminum nitride, and the like.

Additionally, fluid dispensing system 200 includes an inlay element 230 for embedding within opening 220. The inlay element 230 includes a groove 232 formed in an outer surface of the inlay element 230 that extends in a helical path from the inlet end 234 of the inlay element 230 on the first surface of the chamber element 210 to the chamber element 210 The exit end 236 of the inlay element 230 on the second surface. The lathe 232 can be scored in the outer surface of the inlay element 230 using a lathe and a stylus, or it can be scored using a rotating stylus. The inlay element 230 can be fabricated from the same material as the chamber element 210, or the inlaid element 230 can be fabricated from a different material than the chamber element 210.

Once the groove 232 is formed on the outer surface of the inlay element 230, the inlay element 230 will be embedded into the opening 220 of the chamber element 210 to form a gas injection device 240 having reference numeral 238 as in Figure 8B. A helical conduit extending from the supply side of the chamber element 210 to the treated side of the chamber element 210 is shown. The insert member 230 can be secured by the chamber member 210 by melting the insert member 230 within the opening 220 of the chamber member 210; press fitting the insert member 230 to the opening of the chamber member 210. 220; thermally fitting the inlay element 230 into the opening 220 of the chamber element 210; welding the inlay element 230 within the opening 220 of the chamber element 210; brazing the inlaid element 230 ) within the opening 220 of the chamber element 210; or mechanically clamping the inlay element 230 within the opening 220 of the chamber element 210; or a combination of two or more thereof.

For example, the chamber element 210 and the inlay element 230 can be fabricated from quartz, and the bonding agent can comprise a quartz frit. To make a quartz frit, the dopant is placed in the ground quartz to lower its melting temperature. The quartz frit can then be suspended in a solvent such as acetone and applied to the joint surface of the chamber element 210 and the inlay element 230 using a spray coating apparatus and a masking technique. Once the frit coating is applied to the joining surface, the chamber member 210 and the insert member 230 can be joined together under mechanical pressure of the kiln and fired at a temperature sufficient to melt the frit. Quartz melt processing is well known to those skilled in the art of quartz processing.

In the exemplary embodiment, the cross-section of the inlay element 230 is shown as being annular or substantially annular. However, this cross section can take any random shape. For example, the cross section can be an ovular, a tripod, a square, a rectangle, or any polygon. Likewise, in the exemplary embodiment, the helical path of the groove 232 is shown to surround at least one turn (360 degrees of rotation along the outer surface of the inlay element 230) about a shaft extending from the supply side to the processing side, while In the case of this embodiment, it is a plurality of turns. However, the helical path of the grooves 232 can be substantially one turn, or more than one turn (eg, multiple turns), or less than one turn (less than 360 degrees of rotation). For example, a path that is less than one turn may include a path that extends along a portion of one or one side of the polygonal cross-section. Or, the groove 232 The path can be a straight line.

Furthermore, the chamber element 210 or the inlay element 230 or both may include a alignment feature for engaging the features located on the chamber element 210 or the inlay element 230 to ensure that the inlay element 230 is in the chamber Precise alignment within component 210.

Although only one trench 232 is shown in Figures 8A through 8C, a plurality of trenches may be formed in the outer surface of the embedded component 230, each trench being independent of one another. Moreover, each of the plurality of grooves can be designed to have a different exit angle at the exit end 236 of the inlay element 230. Furthermore, each of the plurality of grooves can be designed to have different sizes, diameters or cross-sections at the exit end 236 or the inlet end 234 or at any location along the length of the helical path of the embedded element 230. Profile lateral dimension. Also, each of the plurality of grooves can be designed to have spirals of different lateral dimensions.

The diameter or cross-sectional lateral dimension of the grooves 232 can be distributed from about 5 microns to about 5 mm. Alternatively, the diameter or lateral dimension of the grooves 232 can be distributed from about 10 microns to about 3 mm. Still alternatively, the diameter or lateral dimension of the grooves 232 can be distributed from about 50 microns to about 2 mm. For example, the diameter or lateral dimension can be about 50 microns or about 1 mm or about 2 mm.

According to another embodiment, the inlay element 230 can be formed within another inlay element (which can be formed within another inlay element, etc.). The inlay element 230 may or may not be concentric with another inlay element. The other inlay element in which the inlay element 230 is formed may also comprise more than one helical groove formed on its outer surface.

Referring now to Figures 9A, 9B, and 9C, a fluid dispensing system 300 and a method of making the fluid dispensing system 300 are depicted in accordance with another embodiment. Fluid dispensing system 300 is configured to be coupled to the processing chamber and to receive a flow of processing fluid from the processing fluid supply system and to distribute the processing fluid flow within the processing chamber. For example, the treatment fluid can comprise a gas, a liquid, or a multi-phase fluid comprising a solid material (eg, a slurry) suspended in a liquid, a solid material suspended in a gas, or suspended in a liquid. Gas material. Alternatively, for example, the treatment fluid can comprise a solid powder.

The fluid dispensing system 300 includes a chamber component 310 that includes a first surface on a supply side of the chamber component 310 and a second surface on a processing side of the chamber component 310, wherein the processing side is relative to Supply side. The chamber element 310 includes an opening 320 having a shaped inner surface 312 that is formed through the chamber element 310 from the supply side to the processing side. For example, the shaped inner surface 312 can comprise a tapered inner surface. Alternatively, the shaped inner surface 312 can comprise a stepped surface, a concave surface, or a convex surface, or a combination thereof. The opening 320 can be formed by a conventional processing program. The chamber component 310 can be fabricated from a conductive material, a non-conductive material, or a semi-conductive material. For example, the chamber element 310 can be fabricated from a metal or metal alloy, such as aluminum or an aluminum alloy. Further, the chamber member 310 may include a protective coating film formed on a surface thereof. For example, the coating film may comprise a ceramic coating film or surface anodization. The chamber component 310 can be fabricated from quartz, tantalum, single crystal germanium, polycrystalline germanium, tantalum nitride, tantalum carbide, carbon, glass graphite, alumina, sapphire, aluminum nitride, and the like.

Additionally, fluid dispensing system 300 includes a shaped inlay element 330 for embedding within opening 320. The outer surface shape of the shaped inlay element 330 can be designed to match the shape of the shaped inner surface 312 of the opening 320. The shaped inlay element 330 includes a groove 332 formed in an outer surface of the shaped inlay element 330 that extends in a helical path from the inlet end 334 of the shaped inlay element 330 on the first surface of the chamber element 310 to the chamber The second end surface of element 310 forms an exit end 336 of the inlay element 330. The groove 332 can be scored in the outer surface of the shaped insert member 330 using a lathe and a cutting tip, or it can be scored using a rotary cutting nozzle. The shaped insert element 330 can be fabricated from the same material as the chamber element 310, or the shaped insert element 330 can be fabricated from a different material than the chamber element 310.

Once the groove 332 is formed on the outer surface of the inlay element 330, the shaped inlay element 330 will be embedded into the opening 320 of the chamber element 310 to form a gas injection device 340 having a reference symbol as in Figure 9B. 338 extends from the supply side of the chamber element 310 to the helical conduit on the processing side of the chamber element 310. The inner surface of the opening 320 can be oriented by orienting the chamber element 310 The 312 supports the shaped inlay element 330 such that the shaped inlay element 330 is occupied by the chamber element 310. For example, the shaped inlay element 330 can be disposed within the opening 320 of the chamber element 310. Alternatively, one can occupy the shaped insert element 330 by melting the shaped insert element 330 within the opening 320 of the chamber element 310; welding the shaped insert element 330 within the opening 320 of the chamber element 310; Element 330 is brazed within opening 320 of chamber element 310; or shaped insert element 330 is mechanically clamped within opening 320 of chamber element 310; or a combination of two or more thereof.

For example, the chamber element 310 and the shaped inlay element 330 can be fabricated from quartz, and the bonding agent can comprise a quartz frit. To make a quartz frit, the dopant is placed in the ground quartz to lower its melting temperature. The quartz frit can then be suspended in a solvent such as acetone and applied to the bonding surface of the chamber element 310 and the shaped inlay element 330 using a spray coating apparatus and a masking technique. Once the frit coating is applied to the joining surface, the chamber element 310 and the forming insert 330 can be joined together under mechanical pressure of the kiln and fired at a temperature sufficient to melt the frit. Quartz melt processing is well known to those skilled in the art of quartz processing.

In the exemplary embodiment, the cross-section of the shaped insert member 330 is shown as being annular or substantially annular. However, this cross section can take any random shape. For example, the cross section can be oblong, tripod, square, rectangular, or any polygon. Likewise, in the exemplary embodiment, the helical path of the groove 332 is shown to surround at least one turn (360 degrees of rotation along the outer surface of the shaped inlay element 330) about a shaft extending from the supply side to the processing side. In the case of the present embodiment, it is a plurality of turns. However, the helical path of the grooves 332 may be substantially one turn, or more than one turn (eg, multiple turns), or less than one turn (less than 360 degrees of rotation). For example, a path that is less than one turn may include a path that extends along a portion of one or one side of the polygonal cross-section.

Furthermore, the chamber element 310 or the shaped inlay element 330 or both may include a aligning feature for engaging the features located on the chamber element 310 or the shaped inlay element 330 to ensure the embedding element 330 Precise alignment within the chamber element 310.

Although only one trench 332 is shown in Figures 9A through 9C, a plurality of trenches may be formed in the outer surface of the shaped inlay member 330, each trench being independent of one another. Moreover, each of the plurality of grooves can be designed to have a different exit angle at the exit end 336 of the insert member 330. Furthermore, each of the plurality of grooves can be designed to have a different size, diameter or cross-sectional side at the exit end 336 or the inlet end 334 or at any location along the helical path length of the insert member 330. To the size. Also, each of the plurality of grooves can be designed as a helix having a different lateral dimension.

The diameter or cross-sectional lateral dimension of the grooves 332 can be distributed from about 5 microns to about 5 mm. Alternatively, the diameter or lateral dimension of the grooves 332 can range from about 10 microns to about 3 mm. distributed. Still alternatively, the diameter or lateral dimension of the grooves 332 can be distributed from about 50 microns to about 2 mm. For example, the diameter or lateral dimension can be about 50 microns or about 1 mm or about 2 mm.

According to another embodiment, the inlay element 330 can be formed within another inlay element (which can be formed within another inlay element, etc.). The inlay element 330 may or may not be concentric with another inlay element. The other embedded component in which the embedded component 330 is formed may also include more than one helical groove formed on its outer surface.

Although, in FIGS. 8A, 8B, 8C, 9A, 9B, and 9C, the chamber element 210 (or 310) is shown having a single gas injection device 240 (340), the chamber element 210 (or 310) can include a plurality of Gas injection device. In addition, we can arrange a plurality of gas injection devices on the chamber components in various density configurations. For example, more gas injection means can be formed near the center of the chamber element, and fewer gas injection means can be formed near the periphery of the chamber element. Alternatively, for example, more gas injection means may be formed near the periphery of the chamber element, and fewer gas injection means may be formed near the center of the chamber element. Further, the size of the groove can vary depending on the position of the gas injection means on the chamber member, or in a gas injection device or from a gas injection device to another gas injection device. For example, a larger groove can be formed near the center of the chamber element and a smaller groove can be formed near the periphery of the chamber element. Or, for example, a larger trench can be formed close to the chamber component The periphery is formed with a smaller groove near the center of the chamber element.

Referring now to Figure 10A, a gas distribution system 400 is depicted in accordance with another embodiment. The gas distribution system 400 includes a chamber element 410 having a gas injection device 440 that is contiguous with an opening formed through the chamber element 410, configured to be coupled to the process chamber member 405, and for receiving from a process The process gas stream of the gas supply system, and the process gas stream is distributed within the process chamber. The chamber element 410 can be an embeddable and detachable element located within the process chamber member 405.

Gas distribution system 400 includes a contoured outer surface for engaging an inner surface of an opening formed in processing chamber member 405. If the chamber member 410 is an insertable and detachable member, the operator can remove and replace the chamber member 410 more easily and at a reduced cost since the entire process chamber member 405 need not be replaced.

Referring now to Figures 10B and 10C, a gas distribution system 450 is depicted in accordance with another embodiment. The gas distribution system 450 includes a chamber element 460 having a first gas injection device 462 formed in a second gas injection device 464 that adjoins an opening through the chamber element, the chamber Element 460 is configured to be coupled to the processing chamber. The first gas injection device 462 and the second gas injection device 464 are configured to receive a process gas stream from the process gas supply system and distribute the process gas stream within the process chamber. The first gas injection device 462 and the second gas injection device 464 can be concentric or not concentric.

Referring now to Figures 11A and 11B, a gas distribution system 500 is depicted in accordance with an embodiment. A gas distribution system 500 is configured to be coupled to the processing chamber and to receive a process gas stream from the process gas supply system through the gas supply inlet 510 and to distribute the process gas stream located within the plenum 532 to the process chamber A plurality of openings 538 in which the space is in fluid communication. Further, the gas distribution system 500 includes a gas injection device 520 that is positioned at the inlet 510 of the gas distribution system 500, wherein the gas injection device 520 can be used to diffuse the momentum of the process gas stream into the plenum 532, allowing the process gas to be processed Each opening of the plurality of openings 538 is distributed in a manner that reduces the unevenness in the plenum. Additionally, gas injection device 520 can be used to prevent or reduce the likelihood of a process gas stream passing through gas injection device 520.

As shown in FIG. 11A, gas distribution system 500 can include an upper assembly 540 that is configured to be coupled to a processing chamber. Upper assembly 540 may or may not include an electrode assembly. Upper assembly 540 can be coupled to electrical ground as in Figures 2, 3, and 5, or upper assembly 540 can be coupled to a power supply as in Figures 4 and 6. The upper assembly 540 can include an electrode assembly having a first plate 542 and a second plate 544 coupled to the first plate 542, the gas supply inlet 510 being formed through the first plate 542, wherein the first and second plates The combination can be used to hold the gas injection device 520 between the support frame 548 formed in the second plate 544 and the surface 546 of the first plate 542. A vacuum seal such as an elastomeric seal ring can be used to provide a vacuum seal between the first plate 542, the second plate 544, and the gas injection device 520. Alternatively, the upper assembly 540 comprising the gas injection device 520 can be constructed as a single piece.

In addition, gas distribution system 500 includes a gas injection system 530 that is coupled to upper assembly 540 and that is configured to receive a flow of process gas from gas injection device 520. The gas injection system 530 includes a housing 534 and a gas distribution plate 536 coupled to the housing 534, wherein the gas distribution plate 536 includes a plurality of openings 538 that cause the process gas flow from the plenum 532 to the processing space in the processing chamber to become Evenly.

As shown in FIG. 11B, the gas injection device 520 includes an end edge 529 that is disposed to be occupied by a support in the second plate 544, and further includes a diffuser inlet 522 that is configured to couple with the gas supply inlet 510; a diffuser outlet 524, configured to couple with the plenum 532 in the gas injection system 530; and a helical passage 526 extending from the diffuser inlet 522 to the diffuser outlet 524. The helical channel 526 can include channels formed in the manner described above.

The plurality of openings 538 in the gas distribution plate 536 can be arranged in an amount from one opening to about 1000 openings, and ideally they can be arranged from about 10 openings to about 100 openings. Gas distribution plate 536 can be designed with a plurality of openings 538, each having a diameter distributed from about 0.5 mm to about 10 mm, and desirably can be distributed from about 0.5 mm to about 2 mm. Alternatively, gas distribution plate 536 can be designed with a plurality of openings 538, each The openings have a length that is distributed from about 1 mm to about 20 mm, and desirably can be distributed from about 1 mm to about 3 mm.

By utilizing the gas injection device 520, we can reduce pressure variations within the plenum 532, particularly near the diffuser outlet 524, and mitigate the potential for uneven flux of process gases through the plurality of openings 538. Further, for example, the process gas enters the plenum 532 at an angle such that upon entering the plenum 532, the process gas is provided with a lateral velocity and the process gas is laterally distributed through the plenum 532. In addition, the height of the plenum can be lowered, and conventional baffles can be omitted between the inlet plane of the plenum 532 and the gas distribution plate 536 within the plenum 532, thus reducing the overall thickness of the gas injection system 530. Gas injection system 530 can be fabricated from a dielectric material. The height of the plenum can be designed to be less than about 5 mm, and ideally the height of the plenum can be designed to be less than about 3 mm.

A gas distribution system 500 comprising an upper assembly 540, a gas injection device 520, and a gas injection system 530 can be fabricated from a metal or ceramic such as aluminum or anodized aluminum. Any one of these members may be made of quartz, tantalum, single crystal germanium, polycrystalline germanium, tantalum nitride, tantalum carbide, carbon, glass graphite, alumina, sapphire, aluminum nitride, or the like, or a combination of two or more thereof. Further, for example, any of these portions of the inner surface of these members may be coated with a ceramic material such as alumina or yttria. For example, any one of these portions, such as the inner surface of these members, may be coated with Al ₂ O ₃ , Sc ₂ O ₃ , Sc ₂ F ₃ , YF ₃ , La ₂ O ₃ , Y ₂ O ₃ , or Dy ₂ O ₃ material. Alternatively, these surfaces may be coated with a Group III element.

In one example, the upper component 540 is fabricated from aluminum with or without surface anodization. The upper component 540 can function as an electrode assembly and can be coupled to a power source, such as a radio frequency (RF) power source. Gas injection system 530 can be fabricated from a dielectric material, such as quartz, to allow wireless RF power to be coupled from the upper assembly 540 through gas injection system 530 to the process gas within the processing space. Further, the gas injection device 520 can be fabricated from a dielectric material such as quartz. When the process gas containing, for example HBr, Cl _2, NF ₃ and the like corrosive gases, gas injection means 520 and a gas injection system 530 may be manufactured of quartz, so that contamination of the substrate down to a minimum located in the processing chamber.

Referring now to Figure 12, a gas distribution system 620 formed in a surface wave plasma (SWP) source 630 is depicted in accordance with another embodiment. A surface wave plasma source 630 is configured to be coupled to the processing chamber, and a gas distribution system 620 is configured to receive the process gas stream from the process gas supply system and distribute the process gas stream within the process space in the process chamber. As shown in FIG. 12, the plasma source 630 can include a slotted antenna, such as a radial line slotted antenna (RLSA).

The slotted antenna includes a coaxial feed 638 having an inner conductor 640, an outer conductor 642, and an isolation portion 641. In addition, the plasma source 630 includes an electromagnetic (EM) wave launcher 643 including a slow wave plate 644, a slotted antenna 646 having a slit 648, and a resonator plate 650. The number of slits, the geometry of the slit, the size of the slit, and the distribution of the slits are all elements that provide spatial uniformity to the plasma formed within the processing chamber. For example, the exact resonator plate 650 size (ie, thickness, and diameter) can be calculated digitally.

Wave transmitter 643 includes a microwave emitter for transmitting microwave power into the processing chamber. This microwave emitter can be coupled to a microwave source, such as a 2.45 GHz microwave power source, where microwave power is coupled to the microwave emitter via coaxial feed 638. The microwave energy generated by the microwave source can be guided through a waveguide (not shown) to an isolator (not shown) for absorbing microwave energy reflected back to the microwave oscillator, and then via a coaxial converter (not shown) This energy is converted into a coaxial transverse electromagnetic wave (TEM) mode. Tuners can be used for impedance matching as well as improved power transfer. Microwave energy is coupled to the microwave emitter via coaxial feed 638 where another mode change from the transverse electromagnetic wave mode of coaxial feed 638 to the transverse magnetic wave (TM) mode occurs.

Still referring to FIG. 12, plasma source 630 is coupled to the processing chamber where a sealing device 654 can be used to form a vacuum seal between chamber wall 652 and plasma source 630. Sealing device 654 can include an elastomeric sealing ring. The plasma source 630 can include more than one cooling passage 656 for regulating and/or controlling the temperature of the plasma source 630.

Inner conductor 640 and outer conductor 642 of coaxial feed 638 may comprise, for example, gold The conductive material of the genus, and the slow wave plate 644 and the resonator plate 650 may comprise a dielectric material. In the latter, the slow wave plate 644 and the resonator plate 650 may comprise the same material. Alternatively, the slow wave plate 644 and the resonator plate 650 can comprise different materials. The dielectric material can, for example, comprise quartz.

The material selected for the slow wave plate 644 and the resonator plate 650 can be determined to reduce the wavelength of the propagating electromagnetic wave relative to the free space wavelength, and the size of the slow wave plate 644 and the resonator plate 650 can be determined to ensure effective formation. A standing wave that emits electromagnetic energy into the processing chamber.

Still referring to FIG. 12, gas distribution system 620 includes an inlet 658 formed through the inner conductor and a gas injection device 655 formed through the resonator plate 650. Gas injection device 655 includes an inlet end that is configured to be coupled to inlet 658 and receive a flow of process gas therethrough. A gas injection device 655 can be fabricated in the resonator plate 650 using any of the techniques described above.

As shown in Figure 12, a single gas injection device 655 can be utilized. Alternatively, however, a plurality of gas injection devices may be formed within the resonator plate 650. In addition, a plurality of gas injection devices can be disposed on the resonator plate 650 in a variety of different density configurations. Gas injection device 655 can include a single groove along a helical path as shown in Figure 12, or gas injection device 655 can include a plurality of grooves along a helical path. Each of the plurality of grooves may include a different exit angle. For example, as shown in FIG. 12, a single gas injection device 655 having a plurality of grooves having different exit angles can be used to distribute the process gas throughout the processing chamber.

Referring now to Figure 13, a surface wave plasma (SWP) source 730 is depicted in accordance with yet another embodiment. Surface wave plasma source 730 can be similar to the embodiment of Figure 12, in which like reference numerals designate corresponding parts. The surface wave plasma source 730 is configured to be coupled to a processing chamber, and the gas distribution system 620 is configured to receive a process gas stream from the process gas supply system and distribute the process gas stream within a process space located in the process chamber. As shown in Figure 13, the plasma source 730 can include a slotted antenna, such as a radial line slotted antenna (RLSA).

As shown in FIG. 13, surface wave plasma source 730 includes a undulating surface 760. Shape resonator plate 750. For example, the undulating surface 760 can be modified to improve the spatial uniformity of the plasma in the processing chamber.

Referring now to Figure 14, a method of making a helical conduit through a chamber element is provided. The method includes a flow diagram 800, starting at 810, in which an opening is formed extending from a supply side on a chamber element to a processing side on a chamber element, wherein the opening has an inner surface. The chamber element can comprise any one of the components described in Figures 1-13.

At 820, an inlay member having an outer surface is formed, and in addition the surface is adapted to engage the inner surface of the opening.

At 830, more than one groove is formed in the outer surface of the inlay element. More than one of the grooves are formed such that more than one of the grooves includes an inlet formed on the supply side of the chamber member and an outlet formed on the processing side of the chamber member. More than one of these grooves may include more than one helical groove.

At 840, the inlay element is embedded within the opening of the chamber element.

While only a few embodiments of the present invention have been described in detail, those skilled in the art can readily appreciate that many modifications are possible in the embodiments without departing from the novel teachings and advantages of the invention. Accordingly, all such modifications are intended to be included within the scope of the present invention.

1a‧‧‧Plastic processing system

1b‧‧‧Plastic Processing System

1c‧‧‧ Plasma Processing System

1d‧‧‧Plastic Processing System

1e‧‧‧Plastic Processing System

1f‧‧‧Plastic Processing System

2‧‧‧ pattern

3‧‧‧Photosensitive layer

4‧‧‧film

5‧‧‧Substrate

6‧‧‧Characteristic Department

10‧‧‧ Plasma processing room

20‧‧‧Substrate stage

25‧‧‧Substrate

26‧‧‧Backside gas supply system

28‧‧‧Clamping system

30‧‧‧radio frequency generator

32‧‧‧ impedance matching network

40‧‧‧Gas distribution system

45‧‧‧Processing area

50‧‧‧vacuum pump system

55‧‧‧ Controller

60‧‧‧Rotating magnetic field system

70‧‧‧ upper electrode

72‧‧‧ Radio Frequency Generator

74‧‧‧ impedance matching network

80‧‧‧Induction coil

80'‧‧‧Induction coil

80"‧‧‧ surface wave plasma source

82‧‧‧radio frequency generator

82'‧‧‧Microwave Generator

84‧‧‧ impedance matching network

84'‧‧‧ impedance matching network

200‧‧‧Fluid distribution system

210‧‧‧ chamber components

212‧‧‧ inner surface

214‧‧‧Supply side

216‧‧‧ treatment side

220‧‧‧ openings

230‧‧‧ embedded components

232‧‧‧ trench

234‧‧‧ entrance end

236‧‧‧export end

238‧‧‧Extension direction

240‧‧‧ gas injection device

300‧‧‧Fluid distribution system

310‧‧‧Cell components

312‧‧‧ Formed inner surface

320‧‧‧ openings

330‧‧‧ Formed embedded components

332‧‧‧ trench

334‧‧‧ entrance end

336‧‧‧export end

338‧‧‧ Extension direction

340‧‧‧ gas injection device

400‧‧‧Gas distribution system

405‧‧‧Processing room components

410‧‧‧Cell components

440‧‧‧ gas injection device

450‧‧‧Gas distribution system

460‧‧‧ chamber components

462‧‧‧First gas injection device

464‧‧‧Second gas injection device

500‧‧‧Gas distribution system

510‧‧‧ gas supply entrance

520‧‧‧ gas injection device

522‧‧‧Diffuser inlet

524‧‧‧Diffuser exit

526‧‧‧ spiral passage

529‧‧‧ edge

530‧‧‧ gas injection system

532‧‧‧Inflatable room

534‧‧‧Shell

536‧‧‧ gas distribution board

538‧‧‧ openings

540‧‧‧ upper components

542‧‧‧ first board

544‧‧‧ second board

546‧‧‧ surface

548‧‧‧Support frame

620‧‧‧Gas distribution system

630‧‧‧ Surface wave plasma source

638‧‧‧Coaxial feeder

640‧‧‧ inner conductor

641‧‧‧Isolated part

642‧‧‧Outer conductor

643‧‧‧Electromagnetic wave launcher

644‧‧‧ Slow wave board

646‧‧‧Slotted antenna

648‧‧‧slit

650‧‧‧Resonator board

652‧‧‧ room wall

654‧‧‧ Sealing device

655‧‧‧ gas injection device

656‧‧‧Cooling channel

658‧‧‧ Entrance

730‧‧‧Surface wave plasma source

750‧‧‧Shaped resonator plate

760‧‧‧ undulating surface

800‧‧‧ Flowchart

810‧‧‧ forming an opening through the chamber element

820‧‧‧ Forming an embedded component for engagement with the opening

830‧‧‧ More than one spiral groove formed in the outer surface of the embedded component

840‧‧‧ Embed the embedded component into the opening of the chamber element

1A to 1C show schematic diagrams of a process for pattern etching a film; FIG. 2 shows a schematic view of a plasma processing system in accordance with an embodiment; and FIG. 3 shows plasma processing in accordance with another embodiment. Figure 4 shows a schematic view of a plasma processing system in accordance with another embodiment; Figure 5 shows a schematic view of a plasma processing system in accordance with another embodiment; Figure 6 shows a plasma processing system in accordance with another embodiment Figure 7 shows a schematic view of a plasma processing system in accordance with another embodiment; Figures 8A, 8B and 8C show a gas distribution opening and system in accordance with an embodiment. FIG. 9A, 9B, and 9C show a gas distribution opening and a method of manufacturing the same according to another embodiment; FIG. 10A shows a gas distribution opening according to another embodiment; FIGS. 10B and 10C show another a gas distribution system of an embodiment; FIGS. 11A and 11B show a gas distribution system according to another embodiment; FIG. 12 shows a gas distribution system according to another embodiment; and FIG. 13 shows a gas distribution system according to still another embodiment; Figure 14 shows a method of making a gas distribution opening in accordance with another embodiment.

800‧‧‧ Flowchart

810‧‧‧ forming an opening through the chamber element

820‧‧‧ Forming an embedded component that engages the opening

830‧‧‧ More than one spiral groove formed in the outer surface of the embedded component

840‧‧‧ Embed the embedded component into the opening of the chamber element

Claims (20)

A chamber member configured to be coupled to a processing chamber, the member comprising: a dielectric chamber member disposed to be coupled to a plasma processing chamber, the dielectric chamber member including the dielectric chamber member a first surface on the supply side, and a second surface on the processing side of the dielectric chamber element, the processing side being opposite the supply side, wherein the dielectric chamber element includes an opening having an inner surface, Forming from the first surface through the dielectric chamber element to the second surface; and a dielectric embedding element embedding in the opening such that when embedded in the opening, the dielectric embedding element extends through And occupying at least a portion of the opening from the first surface of the dielectric chamber component to the second surface of the dielectric chamber component, the dielectric embedded component comprising being formed outside the dielectric embedded component a groove in the surface extending along a helical path from an inlet on the supply side of the dielectric chamber component to an outlet on the processing side of the dielectric chamber component, wherein After the groove is formed in the surface a portion of the outer surface that contacts and engages an inner surface of the opening in the dielectric chamber element when the dielectric embedding element is embedded in the opening of the dielectric chamber element, wherein the dielectric When the embedding element is embedded in the opening of the dielectric chamber element, a helical conduit is formed by the inner surface of the opening and the groove in the outer surface of the dielectric embedding element from which the helical conduit is supplied a side extending through the dielectric chamber component to the processing side, the helical conduit for receiving a processing fluid at the inlet and dispensing the processing fluid at the outlet, and wherein the dielectric chamber component and the dielectric embedded component It is set to be in the electric field used to generate the plasma. The chamber member of claim 1, wherein the dielectric chamber component comprises a resonator plate on a slotted planar antenna, and wherein the electric field is transmitted by the slotted planar antenna through the resonator plate To the plasma. The chamber member of claim 1, wherein the helical conduit is substantially completely complete about an axis extending from the supply side to the treatment side, or the helical conduit is wound from the supply side to the treatment One side of the shaft extending more than one turn, or the spiral duct is about one axis or less extending from the supply side to the processing side, or the spiral duct is wound around the shaft extending from the supply side to the processing side . The chamber member of claim 1, wherein a plurality of helical conduits extend from the supply side through the dielectric chamber member to the treatment side, each of the plurality of helical conduits An inlet for receiving a treatment fluid and an outlet for dispensing the treatment fluid are included. The chamber member of claim 4, wherein each of the plurality of helical conduits is formed about a substantially identical axis extending from the supply side to the processing side. The chamber member of claim 4, wherein each of the plurality of helical conduits comprises a different exit angle, or each of the plurality of helical conduits comprises the same exit angle . The chamber member of claim 4, wherein each of the plurality of helical conduits comprises a helix of a different lateral dimension. The chamber member of claim 1, wherein the dielectric chamber member and the dielectric embedding member are disposed together between a power supply radio frequency (RF) electrode and a gas injection system. a gas injection system comprising a plurality of openings for distributing the treatment fluid to the plasma after receiving the treatment fluid from an outlet of the helical conduit, and wherein the electric field is from the powered radio frequency ( An RF) electrode is emitted to the plasma through the gas injection device and the gas injection system. A method of making a catheter, the catheter passing through a chamber component, the method comprising: forming an opening extending from a supply side on the chamber component through the chamber component to a processing side on the chamber component An opening having an inner surface; forming an inlay member having an outer surface for engaging the inner surface of the opening; forming more than one groove in the outer surface of the inlay member to Each of the one or more grooves includes an inlet formed on the supply side and an outlet formed on the processing side; and the insert member is embedded in the opening of the chamber member. The method of manufacturing a catheter of claim 9, wherein the step of forming the opening comprises forming a tapered opening having a tapered inner surface, and wherein the embedding step comprises disposing the embedded component in the chamber component The tapered opening is such that the tapered inner surface of the opening supports a tapered outer surface of the insert member. The method of manufacturing a catheter of claim 9, wherein the step of forming the one or more grooves in the outer surface of the insert member comprises: forming more than one spiral groove in the outer surface of the insert member groove. The method of manufacturing a catheter of claim 9, wherein the step of embedding the insert member into the opening of the chamber member comprises: press fitting the insert member into the chamber member, or The insert element is thermally fitted into the chamber element or the insert element is fused into the chamber element. The method of manufacturing a catheter of claim 9, wherein the step of embedding the insert member into the opening of the chamber member comprises: welding or brazing the insert member to the cavity Inside the room components. A processing system comprising: a processing chamber including a processing space; a process gas supply system in fluid communication with the processing chamber and for introducing a process gas stream into the processing chamber; a gas distribution system coupled to the Processing a chamber for receiving the process gas stream through an inlet and dispensing the process gas stream in the processing space, wherein the gas distribution system includes a gas injection device coupled to the inlet, wherein the gas injection The device includes a spiral conduit extending from an inlet end to an outlet end; a carrier coupled to the processing chamber and configured to support a substrate in the processing chamber to expose the processing gas to the processing gas; a slurry generating system coupled to the processing chamber and configured to form a plasma from the processing gas in the processing space; and a vacuum pumping system coupled to the processing chamber and for evacuating the processing chamber wherein the gas The injection device includes: a dielectric chamber component including a first surface on a supply side of the dielectric chamber component, and a dielectric cavity element a second surface on the processing side, the processing side being opposite the supply side, wherein the dielectric chamber component includes an opening having an inner surface from the first surface through the dielectric chamber component to the first Forming a second surface; and a dielectric embedding element embedding in the opening such that when embedded in the opening, the dielectric embedding element extends through and occupies from the first surface of the dielectric chamber element to At least a portion of the opening of the second surface of the dielectric chamber component, the dielectric embedding component including a trench formed in an outer surface of the dielectric embedding component, the trench being along a helical path The inlet end on the supply side of the dielectric chamber component extends to the outlet end on the processing side of the dielectric chamber component, wherein the outer surface remains after the trench is formed in the outer surface a portion that contacts and engages an inner surface of the opening in the dielectric chamber element when the dielectric embedding element is embedded in the opening of the dielectric chamber component, Wherein the spiral conduit is formed by the inner surface of the opening and the trench in the outer surface of the dielectric embedding element when the dielectric embedding element is embedded in the opening of the dielectric chamber component, a helical conduit extending from the supply side through the dielectric chamber member to the processing side, the helical conduit for receiving a processing fluid at the inlet end and dispensing a processing fluid at the outlet end, and wherein the dielectric chamber The component and the dielectric embedded component are disposed in an electric field generated by the plasma generating system and used to generate the plasma. The processing system of claim 14, wherein the gas distribution system is configured to receive the process gas stream through the inlet, and distribute the process gas stream located in an plenum into the processing space through the gas injection device a plurality of openings in fluid communication. The processing system of claim 14, further comprising: a plasma generating system coupled to the processing chamber and configured to form a plasma from the processing gas located in the processing space, wherein the gas distribution system is formed On or within the plasma generating system. The processing system of claim 14, wherein the plasma generating system is a surface wave plasma (SWP) source, the plasma source comprises: a power coupling system; and an electromagnetic (EM, electromagnetic) a wave transmitter coupled to the power coupling system and for transmitting electromagnetic energy from the power coupling system to the processing space, the electromagnetic wave transmitter comprising a slotted planar antenna having a resonator plate, wherein the inlet is Formed within the slotted planar antenna, and wherein the gas injection device is formed through the resonator plate. The processing system of claim 17, wherein the power coupling system comprises a microwave power coupling system, and wherein the microwave power coupling system comprises: a microwave a source for generating 2.45 GHz microwave energy; a waveguide coupled to an outlet of the microwave source; an isolator coupled to the waveguide and configured to prevent microwave energy from being transmitted back to the microwave source; a coaxial converter And coupled to the isolator and configured to couple the microwave energy to a coaxial feed, wherein the coaxial feed is further coupled to the electromagnetic wave launcher. The processing system of claim 18, wherein the power coupling system includes a coaxial feeder for coupling electromagnetic energy to the electromagnetic wave transmitter, the slotted planar antenna including one coupled to the coaxial feeder One end of the inner conductor and the other end coupled to one of the outer conductors of the feeder, wherein the slotted planar antenna includes more than one slit for positioning the inner conductor from above the slotted planar antenna A first region between the outer conductor couples electromagnetic energy to the resonator plate in a second region below the slotted planar antenna. The processing system of claim 19, wherein the inlet is formed through the inner conductor.