TWI724840B - Display panel - Google Patents
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- TWI724840B TWI724840B TW109110349A TW109110349A TWI724840B TW I724840 B TWI724840 B TW I724840B TW 109110349 A TW109110349 A TW 109110349A TW 109110349 A TW109110349 A TW 109110349A TW I724840 B TWI724840 B TW I724840B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
Description
本發明是關於一種顯示面板,特別是關於一種以反向訊號將多工器訊號抵消,進而抑制面板雜訊產生的顯示面板。 The present invention relates to a display panel, in particular to a display panel that uses reverse signals to cancel multiplexer signals, thereby suppressing panel noise.
在低溫多晶矽(Low Temperature Poly-Silicon,LTPS)顯示器產品當中,通常會設置多工器(Multiplexer),利用開關控制使多個像素電路能共用相同的訊號源,進而降低所需之輸入接點,簡化周邊電路的設計。上述的設計雖然能減少外接線路,但由於多工器訊號具有高跨壓及高頻率的特性,會與電壓源產生大量的寄生電容,這些寄生電容對於顯示器將形成不必要的雜訊,且可能影響顯示器之功能。舉例來說,對於觸控訊號或觸控面板的干擾、車用產品的電磁干擾(Electromagnetic Interference,EMI)等。在終端產品規格要求及規範日漸嚴格的趨勢下,上述雜訊的干擾可能使得顯示器無法通過產品檢驗的問題。 In Low Temperature Poly-Silicon (LTPS) display products, a multiplexer (Multiplexer) is usually installed, which uses switch control to enable multiple pixel circuits to share the same signal source, thereby reducing the required input contacts. Simplify the design of peripheral circuits. Although the above design can reduce the external wiring, because the multiplexer signal has the characteristics of high cross voltage and high frequency, it will generate a lot of parasitic capacitance with the voltage source. These parasitic capacitances will cause unnecessary noise to the display and may Affect the function of the display. For example, interference with touch signals or touch panels, electromagnetic interference (EMI) from automotive products, etc. Under the trend of increasingly stringent terminal product specifications and specifications, the interference of the above-mentioned noise may make the display fail to pass the product inspection.
為了解決上述雜訊的問題,會使用互補式金屬氧化物半導體(CMOS)製程來製作,通過N型電晶體與P型電晶體之間的抵消來抑制雜訊。然而,CMOS製程相較於製作單一類型的電晶體需要更多的製程步驟及設備,增加產品製程上的複雜度,並增加產品成本。若僅製作單一類型的電晶體則會有明顯的干擾雜訊產生,對於產品操作及檢驗上難以達到要求標準。 In order to solve the above-mentioned noise problem, a complementary metal oxide semiconductor (CMOS) process is used to manufacture, and the noise is suppressed by the cancellation between the N-type transistor and the P-type transistor. However, the CMOS process requires more process steps and equipment than a single type of transistor, which increases the complexity of the product process and increases the product cost. If only a single type of transistor is made, there will be obvious interference noise, which is difficult to meet the required standards for product operation and inspection.
綜觀前所述,習知的顯示面板結構在多工器的設置上仍然會產生雜訊而影響最終產品的功能,具有相當之缺陷,因此,本發明藉由設計一種顯示面板結構,針對現有技術之缺失加以改善,解決雜訊干擾問題,進而增進產業上之實施利用。 In summary, the conventional display panel structure still generates noise in the multiplexer setting and affects the function of the final product, which has considerable defects. Therefore, the present invention aims at the prior art by designing a display panel structure. The deficiencies should be improved to solve the problem of noise interference, thereby enhancing the implementation and utilization of the industry.
有鑑於上述習知技術之問題,本發明之目的在於提供一種顯示面板,其具有反向訊號及特殊的配線結構,藉此解決現有顯示面板上之多工器訊號造成顯示面板產生雜訊干擾之問題。 In view of the above-mentioned problems of the conventional technology, the purpose of the present invention is to provide a display panel with a reverse signal and a special wiring structure, thereby solving the problem of noise interference generated by the display panel caused by the multiplexer signal on the existing display panel. problem.
根據上述目的,本發明之實施例提出一種顯示面板,其包含顯示區域以及周邊區域。其中,顯示區域包含像素陣列,像素陣列的複數行像素分別連接於複數個資料線。周邊區域包含多工器,多工器包含複數個波形調變電路,複數個波形調變電路分別包含控制電晶體、控制訊號線、反向訊號線以及電容。控制電晶體包含第一端、第二端及控制端,第一端連接複數個資料線其中之一,第二端連接於源極驅動器。控制訊號線連接控制電晶體之控制端,傳送控制訊號以控制控制電晶體。反向訊號線傳送同步於控制訊號之反向訊號。電容對應控制電晶體設置,電容包含第一端及第二端,第一端連接反向訊號線,第二端連接低電壓源。 According to the above objective, an embodiment of the present invention provides a display panel including a display area and a peripheral area. Wherein, the display area includes a pixel array, and a plurality of rows of pixels of the pixel array are respectively connected to a plurality of data lines. The peripheral area contains multiplexers. The multiplexers include a plurality of waveform modulation circuits, and the plurality of waveform modulation circuits respectively include a control transistor, a control signal line, a reverse signal line, and a capacitor. The control transistor includes a first terminal, a second terminal and a control terminal. The first terminal is connected to one of a plurality of data lines, and the second terminal is connected to the source driver. The control signal line is connected to the control terminal of the control transistor, and transmits the control signal to control the control transistor. The reverse signal line transmits the reverse signal synchronized with the control signal. The capacitor corresponds to the setting of the control transistor. The capacitor includes a first end and a second end. The first end is connected to a reverse signal line, and the second end is connected to a low-voltage source.
在本發明的實施例中,複數個波形調變電路還可包含輔助電晶體,輔助電晶體包含第一端、第二端及控制端,第一端連接電容之第二端,第二端連接低電壓源,控制端連接於控制訊號線。 In an embodiment of the present invention, the plurality of waveform modulation circuits may further include auxiliary transistors. The auxiliary transistors include a first terminal, a second terminal, and a control terminal. The first terminal is connected to the second terminal of the capacitor, and the second terminal Connect the low-voltage source, and connect the control terminal to the control signal line.
在本發明的實施例中,電容的面積可大於控制電晶體的面積。 In the embodiment of the present invention, the area of the capacitor may be larger than the area of the control transistor.
在本發明的實施例中,電容與控制電晶體的閘極汲極電容之間的電容值差異可小於20%。 In the embodiment of the present invention, the capacitance difference between the capacitor and the gate-drain capacitance of the control transistor may be less than 20%.
在本發明的實施例中,低電壓源可為反向訊號線之低準位。 In the embodiment of the present invention, the low voltage source may be the low level of the reverse signal line.
在本發明的實施例中,輔助電晶體之閘極可設置於第一金屬層,第一金屬層連接控制訊號線。電容之第一端設置於第一金屬層,電容之第二端設置於第二金屬層。第一金屬層連接反向訊號線,第二金屬層連接低電壓源。 In the embodiment of the present invention, the gate electrode of the auxiliary transistor may be disposed on the first metal layer, and the first metal layer is connected to the control signal line. The first end of the capacitor is disposed on the first metal layer, and the second end of the capacitor is disposed on the second metal layer. The first metal layer is connected to the reverse signal line, and the second metal layer is connected to the low voltage source.
在本發明的實施例中,控制電晶體的大小可為輔助電晶體的10~30倍。 In the embodiment of the present invention, the size of the control transistor can be 10-30 times that of the auxiliary transistor.
承上所述,依本發明實施例所揭露的顯示面板,可在使用單一類型電晶體製程的情況下,通過調變電路設計達到與CMOS製程相同,甚至更佳效果的多工器。不但能降低製程步驟的複雜度,也能降低生產成本,製成的顯示面板不但能防止控制訊號產生不必要的雜訊,也可避免這些雜訊在產品操作或測試時產生干擾。 Based on the foregoing, the display panel disclosed in the embodiment of the present invention can achieve a multiplexer with the same or even better effect as the CMOS process through the modulation circuit design using a single type of transistor process. Not only can the complexity of the process steps be reduced, but also the production cost can be reduced. The manufactured display panel can not only prevent unnecessary noise from the control signal, but also prevent the noise from causing interference during product operation or testing.
10:顯示面板 10: Display panel
101,102:波形調變電路 101, 102: Waveform modulation circuit
A:通道區域 A: Channel area
C1:第一電容 C1: The first capacitor
C2:第二電容 C2: second capacitor
C3:第三電容 C3: third capacitor
Ca:電容值 Ca: Capacitance value
Cgd:閘極汲極電容 Cgd: gate and drain capacitance
Cgs:閘極源極電容 Cgs: Gate source capacitance
D:汲極區域 D: Drain area
D1:第一資料線 D1: The first data line
D2:第二資料線 D2: The second data line
D3:第三資料線 D3: The third data line
D4:第四資料線 D4: The fourth data line
D5:第五資料線 D5: Fifth data line
D6:第六資料線 D6: The sixth data line
DA:顯示區域 DA: display area
G:閘極電極 G: Gate electrode
GI:閘極絕緣層 GI: Gate insulation layer
M1:第一電極 M1: first electrode
M2:第二電極 M2: second electrode
MUX1:第一多工器 MUX1: the first multiplexer
MUX2:第二多工器 MUX2: second multiplexer
P1:第一像素 P1: the first pixel
P2:第二像素 P2: second pixel
P3:第三像素 P3: third pixel
PA:周邊區域 PA: Surrounding area
PM:像素陣列 PM: pixel array
S:源極區域 S: source region
S1:第一訊號源 S1: The first signal source
S2:第二訊號源 S2: Second signal source
Sub:基板 Sub: Substrate
SW1:第一控制訊號線 SW1: The first control signal line
SW2:第二控制訊號線 SW2: The second control signal line
SW3:第三控制訊號線 SW3: The third control signal line
T11:第一控制電晶體 T11: The first control transistor
T12:第一輔助電晶體 T12: The first auxiliary transistor
T21:第二控制電晶體 T21: The second control transistor
T22:第二輔助電晶體 T22: second auxiliary transistor
T31:第三控制電晶體 T31: The third control transistor
T32:第三輔助電晶體 T32: Third auxiliary transistor
VSS:低電壓源 VSS: Low voltage source
XSW1:第一反向訊號線 XSW1: The first reverse signal line
XSW2:第二反向訊號線 XSW2: The second reverse signal line
XSW3:第三反向訊號線 XSW3: The third reverse signal line
為使本發明之技術特徵、內容與優點及其所能達成之功效更為顯而易見,茲將本發明配合附圖,並以實施例之表達形式詳細說明如下:第1圖為本發明實施例之顯示面板之示意圖。 In order to make the technical features, content and advantages of the present invention and the effects that can be achieved more obvious, the present invention is combined with the accompanying drawings and described in detail in the form of embodiments as follows: Figure 1 is an embodiment of the present invention Schematic diagram of the display panel.
第2圖為本發明實施例之多工器之波形調變電路之示意圖。 FIG. 2 is a schematic diagram of the waveform modulation circuit of the multiplexer according to the embodiment of the present invention.
第3圖為本發明另一實施例之多工器之波形調變電路之示意圖。 FIG. 3 is a schematic diagram of a waveform modulation circuit of a multiplexer according to another embodiment of the present invention.
第4圖為本發明實施例之波形調變電路結構之示意圖。 FIG. 4 is a schematic diagram of the structure of a waveform modulation circuit according to an embodiment of the present invention.
第5圖為本發明實施例之波形調變電路測試結果之示意圖。 FIG. 5 is a schematic diagram of the test result of the waveform modulation circuit according to the embodiment of the present invention.
為利瞭解本發明之技術特徵、內容與優點及其所能達成之功效,茲將本發明配合附圖,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍,合先敘明。 In order to understand the technical features, content and advantages of the present invention as well as the effects that can be achieved, the present invention is described in detail with the accompanying drawings and in the form of embodiment expressions as follows, and the figures used therein are only For the purpose of illustration and supplementary description, it is not necessarily the true scale and precise configuration after the implementation of the invention. Therefore, the scale and configuration relationship of the attached drawings should not be interpreted, and the scope of rights of the invention in actual implementation should not be interpreted. Narrate.
在附圖中,為了淸楚起見,放大了層、膜、面板、區域、導光件等的厚度或寬度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反地,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的「連接」,其可以指物理及/或電性的連接。再者,「電性連接」或「耦合」係可為二元件間存在其它元件。此外,應當理解,儘管術語「第一」、「第二」、「第三」在本文中可以用於描述各種元件、部件、區域、層及/或部分,其係用於將一個元件、部件、區域、層及/或部分與另一個元件、部件、區域、層及/或部分區分開。因此,僅用於描述目的,而不能將其理解為指示或暗示相對重要性或者其順序關係。 In the drawings, the thickness or width of layers, films, panels, regions, light guides, etc. are exaggerated for the sake of clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to a physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean that there are other elements between the two elements. In addition, it should be understood that although the terms "first", "second", and "third" may be used herein to describe various elements, components, regions, layers and/or parts, they are used to refer to an element, component , Region, layer and/or part are distinguished from another element, component, region, layer and/or part. Therefore, it is only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or its sequence relationship.
除非另有定義,本文所使用的所有術語(包括技術和科學術語)具有與本發明所屬技術領域的通常知識者通常理解的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術 和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地如此定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have meanings commonly understood by ordinary knowledge in the technical field to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having the technical The meaning consistent with the meaning in the context of the present invention will not be interpreted as an idealized or excessively formal meaning unless it is clearly defined as such herein.
請參閱第1圖,其為本發明實施例之顯示面板之示意圖。如圖所示,顯示面板10包含顯示區域DA以及周邊區域PA,顯示區域DA為顯示影像的像素區域,其為複數個行與列所形成的像素陣列PM,周邊區域PA則設置在顯示區域DA外側周圍,其為各種控制電路的設置區域。在本實施例中,像素陣列PM的第一行像素包含第一像素P1、第二像素P2、第三像素P3...,各個像素分別連接至第一資料線D1,第二行像素的各個像素分別連接至第二資料線D2,以下依此類推。當像素陣列PM有多少行像素則需要相當數量的資料線以傳送資料訊號至各個像素當中,每一個資料線都需要相應的源極驅動器(Source)來提供資料訊號,也因此需要相應數量的接點來連接。為了減少周邊區域PA的電路配置及複雜度,周邊區域PA可設置多工器來解決上述問題。
Please refer to FIG. 1, which is a schematic diagram of a display panel according to an embodiment of the present invention. As shown in the figure, the
如第1圖所示,第一多工器MUX1一端可連接第一資料線D1、第二資料線D2及第三資料線D3,另一端則連接至第一訊號源S1,也就是通過第一多工器MUX1使得三條資料線共用相同的第一訊號源S1,減少訊號源的設置以簡化周邊區域PA的電路。同樣地,第二多工器MUX2可連接第四資料線D4、第五資料線D5及第六資料線D6,共用第二訊號源S2的訊號,這裡所述的多工器是以一對三為例來說明,但本揭露不侷限於此,多工器也可為一對二或一對更多數量的設置,依據面板大小及像素數量有所不同。以下實施例將進一步說明多工器的電路結構。 As shown in Figure 1, one end of the first multiplexer MUX1 can be connected to the first data line D1, the second data line D2, and the third data line D3, and the other end is connected to the first signal source S1, that is, through the first The multiplexer MUX1 makes the three data lines share the same first signal source S1, reducing the number of signal sources to simplify the circuit in the peripheral area PA. Similarly, the second multiplexer MUX2 can be connected to the fourth data line D4, the fifth data line D5, and the sixth data line D6 to share the signal of the second signal source S2. The multiplexer described here is a one-to-three Take an example to illustrate, but the present disclosure is not limited to this. The multiplexer can also be arranged in one-to-two or one-to-one more numbers, depending on the panel size and the number of pixels. The following embodiments will further illustrate the circuit structure of the multiplexer.
請參閱第2圖,其為本發明另一實施例之多工器之波形調變電路之示意圖。波形調變電路包含控制電晶體、控制訊號線、反向訊號線及電容,
如圖所示,以前述實施例一對三的多工器為例,波形調變電路101分別包含第一控制電晶體T11、第二控制電晶體T21及第三控制電晶體T31,各個控制電晶體之第一端分別連接第一資料線D1、第二資料線D2及第三資料線D3,各個控制電晶體之第二端則連接至第一訊號源S1,各個控制電晶體之控制端分別連接第一控制訊號線SW1、第二控制訊號線SW2及第三控制訊號線SW3。第一控制訊號線SW1傳送控制訊號以開啟第一控制電晶體T11,使得第一訊號源S1之資料訊號能傳送至第一資料線D1。同樣地,第二控制訊號線SW2及第三控制訊號線SW3也能傳送控制訊號在不同時框中開啟第二控制電晶體T21或第三控制電晶體T31,使資料訊號也能傳送至第二資料線D2或第三資料線D3。依據上述的電路設置,第一資料線D1、第二資料線D2及第三資料線D3可共用第一訊號源S1,無須分別連接至獨立的訊號源,簡化周邊電路的設計。
Please refer to FIG. 2, which is a schematic diagram of a waveform modulation circuit of a multiplexer according to another embodiment of the present invention. The waveform modulation circuit includes a control transistor, a control signal line, a reverse signal line and a capacitor,
As shown in the figure, taking the one-to-three multiplexer of the foregoing embodiment as an example, the
然而,第一控制電晶體T11、第二控制電晶體T21及第三控制電晶體T31在啟動的同時,由於控制訊號高跨壓及高頻率的特性,電晶體的閘極源極之間與閘極汲極之間的寄生電容,會使得顯示面板產生雜訊,這些雜訊將對於最終產品的操作上產生干擾,例如影響觸控訊號,或是對車用產品產生電磁干擾等問題。因此,本揭露於波形調變電路101進一步設置電容及反向訊號線來抵消上述的雜訊。如圖所示,第一電容C1的一端連接第一反向訊號線XSW1,另一端連接低電壓源VSS,這裡所述的低電壓源VSS可指任意直流電位的電壓源,例如接地端(GND)。第一反向訊號線XSW1傳送同步於控制訊號之反向訊號,藉由相反的訊號之間相互抵消來抑制雜訊產生。同樣地,第二電容C2的一端連接第二反向訊號線XSW2,另一端連接低電壓源VSS,第三電容C3的一端連接第三反向訊號線XSW3,另一端連接低電壓源VSS。第二反向訊號線XSW2及第三反向
訊號線XSW3同樣傳送同步於控制訊號的反向訊號來抵消雜訊。經由反向訊號的設置,可抑制控制訊號造成的雜訊,降低多工器在操作時產生的雜訊干擾,也避免包含顯示面板的產品功能受到影響。
However, when the first control transistor T11, the second control transistor T21, and the third control transistor T31 are activated, due to the high voltage and high frequency characteristics of the control signal, the gate and source of the transistor are in contact with each other. The parasitic capacitance between the poles and the drain will cause the display panel to generate noise. These noises will interfere with the operation of the final product, such as affecting the touch signal or causing electromagnetic interference to automotive products. Therefore, in the present disclosure, a capacitor and a reverse signal line are further provided in the
請參閱第3圖,其為本發明另一實施例之多工器之波形調變電路之示意圖。波形調變電路包含控制電晶體、輔助電晶體、控制訊號線、反向訊號線及電容。如圖所示,波形調變電路102分別包含第一控制電晶體T11、第二控制電晶體T21及第三控制電晶體T31,各個控制電晶體之第一端分別連接第一資料線D1、第二資料線D2及第三資料線D3,各個控制電晶體之第二端則連接至第一訊號源S1,各個控制電晶體之控制端分別連接第一控制訊號線SW1、第二控制訊號線SW2及第三控制訊號線SW3。第一電容C1的一端連接第一反向訊號線XSW1,第二電容C2的一端連接第二反向訊號線XSW2,第三電容C3的一端連接第三反向訊號線XSW3。上述波形調變電路102與前一實施例類似,其相同元件的技術特徵不再重複說明。
Please refer to FIG. 3, which is a schematic diagram of a waveform modulation circuit of a multiplexer according to another embodiment of the present invention. The waveform modulation circuit includes a control transistor, an auxiliary transistor, a control signal line, a reverse signal line and a capacitor. As shown in the figure, the
在本實施例中,波形調變電路102還進一步設置了第一輔助電晶體T12、第二輔助電晶體T22及第三輔助電晶體T32。第一輔助電晶體T12的第一端連接第一電容C1的另一端,第二端連接於低電壓源VSS,而控制端連接於第一控制訊號線SW1。同樣地,第二輔助電晶體T22的第一端連接第二電容C2的另一端,第二端連接於低電壓源VSS,而控制端連接於第二控制訊號線SW2。第三輔助電晶體T32的第一端連接第三電容C3的另一端,第二端連接於低電壓源VSS,而控制端連接於第三控制訊號線SW3。第一輔助電晶體T12同樣接收第一控制訊號線SW1的控制訊號,開啟第一輔助電晶體T12,使得第一電容C1接收之反向訊號,可模擬第一控制電晶體T11在開啟時,閘極源極之間與閘極汲極之間
的寄生電容逐漸增加的訊號波形,以及關閉時,通道消失使得訊號迅速減少的波形,藉此更精準的抵消雜訊。同樣地,第二輔助電晶體T22及第三輔助電晶體T32同樣接收第二控制訊號線SW2及第三控制訊號線SW3的控制訊號,分別開啟第二輔助電晶體T22及第三輔助電晶體T32,使得第二電容C2及第三電容C3接收之反向訊號,同樣能模擬第二控制電晶體T21及第三控制電晶體T31之訊號波形。
In this embodiment, the
在上述實施例當中,第一電容C1的一端是連接第一反向訊號線XSW1,另一端連接至低電壓源VSS,在收到反向訊號時能通過電壓差產生電容,低電壓源VSS可以是第一反向訊號線XSW1之低準位,例如為-9V,其可避免在接收到反向訊號時,第一電容C1兩端均為高準位而無法產生電容效應來抵消控制訊號產生之寄生電容。第二電容C2及第三電容C3之一端分別連接至第二反向訊號線XSW2及第三反向訊號線XSW3,另一端則分別連接至低電壓源VSS,其同樣可為反向訊號線的低準位。另一方面,第一輔助電晶體T12是為了調整反向訊號的波形來模擬第一控制電晶體T11產生之雜訊波形,其抵消訊號的大小為第一反向訊號線XSW1來控制,第一輔助電晶體T12無須設置與第一控制電晶體T11相同的大小,在本實施例中,第一輔助電晶體T12的大小可遠小於第一控制電晶體T11。在另一實施例當中,第一控制電晶體T11的大小可為第一輔助電晶體T12的10~30倍。同樣地,第二控制電晶體T21的大小亦可為第二輔助電晶體T22的10~30倍,第三控制電晶體T31的大小亦可為第三輔助電晶體T32的10~30倍。 In the above embodiment, one end of the first capacitor C1 is connected to the first reverse signal line XSW1, and the other end is connected to the low voltage source VSS. When a reverse signal is received, the capacitor can be generated by the voltage difference. The low voltage source VSS can be It is the low level of the first reverse signal line XSW1, such as -9V, which can avoid the high level at both ends of the first capacitor C1 when the reverse signal is received, and the capacitive effect cannot be generated to offset the control signal generation The parasitic capacitance. One end of the second capacitor C2 and the third capacitor C3 is respectively connected to the second reverse signal line XSW2 and the third reverse signal line XSW3, and the other end is respectively connected to the low voltage source VSS, which can also be the reverse signal line Low level. On the other hand, the first auxiliary transistor T12 is to adjust the waveform of the reverse signal to simulate the noise waveform generated by the first control transistor T11. The magnitude of the cancellation signal is controlled by the first reverse signal line XSW1. The auxiliary transistor T12 does not need to be set to the same size as the first control transistor T11. In this embodiment, the size of the first auxiliary transistor T12 can be much smaller than the first control transistor T11. In another embodiment, the size of the first control transistor T11 may be 10-30 times that of the first auxiliary transistor T12. Similarly, the size of the second control transistor T21 can also be 10-30 times that of the second auxiliary transistor T22, and the size of the third control transistor T31 can also be 10-30 times that of the third auxiliary transistor T32.
請參閱第4圖,其為本發明另一實施例之波形調變電路結構之示意圖。如圖所示,以第一控制電晶體T11與第一電容C1的設置結構為例,第一控制電晶體T11設置於基板Sub上,其多晶矽層包含源極區域S、汲極區域D以及兩 者間的通道區域A,多晶矽層接著在閘極絕緣層GI上設置閘極電極G,閘極電極G連接至第一控制訊號線SW1,接收控制訊號來開啟第一控制電晶體T11,進而使訊號源的資料訊號能傳送至資料線上的各個像素。當第一控制電晶體T11開啟時,通道區域A導通,閘極電極G與源極區域S產生閘極源極電容Cgs,閘極電極G與汲極區域D產生閘極汲極電容Cgd。這些寄生電容在顯示裝置操作或檢測時會形成不必要的雜訊,對裝置操作造成干擾。在本實施例中,第一電容C1設置在閘極絕緣層GI上,通過第一電極M1與第二電極M2之間的電壓差產生電容值Ca,通過此電容值Ca與閘極源極電容Cgs及閘極汲極電容Cgd相抵消,避免上述的雜訊產生。 Please refer to FIG. 4, which is a schematic diagram of a waveform modulation circuit structure according to another embodiment of the present invention. As shown in the figure, taking the arrangement structure of the first control transistor T11 and the first capacitor C1 as an example, the first control transistor T11 is arranged on the substrate Sub, and its polysilicon layer includes a source region S, a drain region D, and two In the channel area A between the two, the polysilicon layer is then provided with a gate electrode G on the gate insulating layer GI. The gate electrode G is connected to the first control signal line SW1 and receives the control signal to turn on the first control transistor T11, thereby enabling The data signal of the signal source can be sent to each pixel on the data line. When the first control transistor T11 is turned on, the channel region A is turned on, the gate electrode G and the source region S generate a gate-source capacitance Cgs, and the gate electrode G and the drain region D generate a gate-drain capacitance Cgd. These parasitic capacitances will form unnecessary noise during the operation or detection of the display device, and cause interference to the operation of the device. In this embodiment, the first capacitor C1 is disposed on the gate insulating layer GI, and the capacitance value Ca is generated by the voltage difference between the first electrode M1 and the second electrode M2, and the capacitance value Ca is combined with the gate-source capacitance Cgs and the gate-drain capacitance Cgd cancel each other out to avoid the above-mentioned noise generation.
為了抵消第一控制電晶體T11產生之寄生電容,第一電容C1的電容值Ca可與閘極源極電容Cgs或閘極汲極電容Cgd的電容值相同,或者兩者之間差異小於20%。第一電容C1之電容值Ca可由以下的公式計算:
其中W x L為第一控制電晶體T11的面積,d為第一控制電晶體T11之閘極電極G與導通區域A之距離,即閘極絕緣層GI的厚度,ε為介質的電容率。為了達到與第一控制電晶體T11產生之電容值相近,第一電容C1之面積可大於第一控制電晶體T11之面積。 Where W x L is the area of the first control transistor T11, d is the distance between the gate electrode G of the first control transistor T11 and the conduction area A, that is, the thickness of the gate insulating layer GI, and ε is the permittivity of the medium. In order to achieve a capacitance similar to that generated by the first control transistor T11, the area of the first capacitor C1 can be larger than the area of the first control transistor T11.
另一方面,第一控制電晶體T11之閘極電極G可與第一電容C1之第一電極M1設在同一金屬層,第一電容C1之第二電極M2則間隔設置在另一金屬層。在本實施例當中,第一電極M1連接至第一反向訊號線XSW1,第二電極M2連接至低電壓源VSS,這樣的設置使得第一反向訊號線XSW1傳送反向訊號 時,不會經由裝置表面輻射訊號,反而通過第二電極M2產生屏蔽的效果。換言之,當裝置於表面進行操作或測試時,不會因此產生額外的干擾。 On the other hand, the gate electrode G of the first control transistor T11 and the first electrode M1 of the first capacitor C1 can be arranged on the same metal layer, and the second electrode M2 of the first capacitor C1 is arranged on another metal layer at intervals. In this embodiment, the first electrode M1 is connected to the first reverse signal line XSW1, and the second electrode M2 is connected to the low voltage source VSS. This arrangement makes the first reverse signal line XSW1 transmit the reverse signal At this time, the signal will not be radiated through the surface of the device, but the shielding effect will be generated by the second electrode M2. In other words, when the device is operated or tested on the surface, it will not cause additional interference.
請參閱第5圖,其為本發明實施例之波形調變電路測試結果之示意圖。如圖所示,(A)部分為通過CMOS製程所製作之多工器,其N型電晶體(120/6)、P型電晶體(20/6)分別接收控制訊號線SW與反向訊號線XSW後量測其訊號波形之結果;(B)部分為本揭露之僅使用NMOS製程製作控制電晶體(120/6)及輔助電晶體(6/6),並配合電容(150fF)分別接收控制訊號線SW與反向訊號線XSW後量測其訊號波形之結果;(C)部分則是將控制訊號與反向訊號之波形疊加後形成之雜訊訊號結果。由(C)部分疊加的結果分別呈現(A)部分與(B)部分之測試結果,取其電壓的波峰與波峰間的值(peak to peak)以及均方根值(RMS)來評價兩者的抵消效果。 Please refer to FIG. 5, which is a schematic diagram of the test result of the waveform modulation circuit according to the embodiment of the present invention. As shown in the figure, part (A) is a multiplexer made by CMOS process. Its N-type transistor (120/6) and P-type transistor (20/6) respectively receive the control signal line SW and the reverse signal The result of measuring the signal waveform after the line XSW; (B) part of this disclosure uses only the NMOS process to make the control transistor (120/6) and auxiliary transistor (6/6), and cooperate with the capacitor (150fF) to receive them separately The signal waveform of the control signal line SW and the reverse signal line XSW is measured after the signal waveform; part (C) is the result of the noise signal formed by superimposing the waveform of the control signal and the reverse signal. The superimposed results of part (C) respectively show the test results of part (A) and part (B), and the peak to peak and root mean square value (RMS) of the voltage are used to evaluate the two The offsetting effect.
依據測試結果,(B)部分不論在兩種評價值均優於(A)部分的表現,其中電壓的波峰與波峰間的值(B)部分的4.73V小於(A)部分的5.45V,均方根值(B)部分的2.03V也小於(A)部分的2.07V,可見本揭露僅用單一類型電晶體製程製作之多工器結構,通過調變電路能形成與CMOS製程相同甚至更佳的雜訊抑制效果,在降低製程成本的同時,也能同時提升產品競爭力。 According to the test results, part (B) is better than part (A) in both evaluation values, and the peak-to-peak value of voltage (B) is 4.73V less than (A) 5.45V, both The 2.03V of the root square value (B) part is also less than the 2.07V of the part (A). It can be seen that the multiplexer structure manufactured by the single-type transistor process in the present disclosure can be formed by the modulation circuit to be the same as or even better than the CMOS process. The excellent noise suppression effect can not only reduce the cost of the manufacturing process, but also enhance the competitiveness of the product at the same time.
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above description is only illustrative, and not restrictive. Any equivalent modifications or alterations that do not depart from the spirit and scope of the present invention should be included in the scope of the appended patent application.
10:顯示面板 10: Display panel
D1:第一資料線 D1: The first data line
D2:第二資料線 D2: The second data line
D3:第三資料線 D3: The third data line
D4:第四資料線 D4: The fourth data line
D5:第五資料線 D5: Fifth data line
D6:第六資料線 D6: The sixth data line
DA:顯示區域 DA: display area
MUX1:第一多工器 MUX1: the first multiplexer
MUX2:第二多工器 MUX2: second multiplexer
P1:第一像素 P1: the first pixel
P2:第二像素 P2: second pixel
P3:第三像素 P3: third pixel
PA:周邊區域 PA: Surrounding area
PM:像素陣列 PM: pixel array
S1:第一訊號源 S1: The first signal source
S2:第二訊號源 S2: Second signal source
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