TWI724642B - Micro imaging apparatus and processing method thereof - Google Patents

Micro imaging apparatus and processing method thereof Download PDF

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TWI724642B
TWI724642B TW108142159A TW108142159A TWI724642B TW I724642 B TWI724642 B TW I724642B TW 108142159 A TW108142159 A TW 108142159A TW 108142159 A TW108142159 A TW 108142159A TW I724642 B TWI724642 B TW I724642B
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beams
light
micro
collimated
light beams
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TW108142159A
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TW202121058A (en
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郭鴻鼎
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墨子光電有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This invention provides a micro imaging apparatus comprising a projection device for providing a plurality of beams forming a pattern; a collimating element for forming the plurality of collimated beams; a reticle element for forming the plurality of collimated beams into a plurality of shrinking beams; and a focusing element for forming a plurality of focusing beams from a plurality of shrinking beams to image a pattern formed by the plurality of focusing beams on the target, thereby avoiding the use of a mask in the conventional process to reduce process cost and improve process efficiency.

Description

微製像設備及其加工方法 Micro-imaging equipment and its processing method

本發明係關於一種微製像設備及其加工方法,尤指一種用於無光罩製程中的微製像設備及其加工方法。 The present invention relates to a micro-imaging equipment and its processing method, in particular to a micro-imaging equipment and its processing method used in a maskless manufacturing process.

微製像設備係用於將所需之圖案成像至目標物之設備,其主要應用於例如半導體封裝、面板顯示器或印刷電路板(PCB)之製程中。而現行的半導體製程中之微製像設備常利用光罩將所需圖案成像於基板之感光材料層上,進而轉印於例如矽晶圓或玻璃板之基板上。 Micro-imaging equipment is a device used to image a desired pattern onto a target, and it is mainly used in, for example, semiconductor packaging, panel display, or printed circuit board (PCB) manufacturing processes. The current micro-imaging equipment in the semiconductor manufacturing process often uses a photomask to image the desired pattern on the photosensitive material layer of the substrate, and then transfer it onto the substrate such as a silicon wafer or a glass plate.

然而,現今製程中光罩本身不但需要花費相當的時間製造,且其成本也相當昂貴,此外,也無法隨時因應需求而改變光罩上所形成之圖案,此時光罩上所形成之圖案若非所需,此光罩即無法使用,故對於產品製造商而言產生了相當大的損失。 However, in the current manufacturing process, the photomask itself not only takes a considerable amount of time to manufacture, and its cost is also quite expensive. In addition, it is impossible to change the pattern formed on the photomask at any time according to the demand. At this time, the pattern formed on the photomask is not what it is. If necessary, this photomask cannot be used, so a considerable loss is caused to the product manufacturer.

為解決上述問題,相關業界發展出「無光罩(maskless)」製程,此無光罩製程相較於傳統需光罩的製程上,具有減少製程時間且能隨時改變圖案的優點。而現今的無光罩製程主要採用美國德州儀器所製造的「高度精密的數位微反射晶片(Digital Micro-mirror Device,DMD)」。美 國德州儀器所製造的DMD晶片由複數個微小鏡片所組成,利用光源通過複數個微小鏡片,並由複數個微小鏡片的角度切換達到ON及OFF的狀態以控制光線的明暗,藉此形成圖案並成像於基板上。 In order to solve the above-mentioned problems, the related industry has developed a "maskless" process. Compared with the traditional process that requires a mask, the maskless process has the advantages of reducing the process time and being able to change the pattern at any time. Today's matte mask manufacturing process mainly uses the "high-precision digital micro-mirror device (DMD)" manufactured by Texas Instruments. nice The DMD chip manufactured by Texas Instruments is composed of a plurality of micro lenses. The light source passes through the plurality of micro lenses, and the angle of the plurality of micro lenses is switched to the ON and OFF state to control the brightness of the light, thereby forming a pattern and Image on the substrate.

儘管現今製程中能夠利用DMD晶片達到無光罩製程,但DMD晶片本身價格昂貴,且照射面積有限,故在製程過程中需要將複數個DMD晶片組合成陣列,以提高生產效率,此外,DMD晶片上的複數個微小鏡片在多次切換ON及OFF的狀態後也容易故障,故其製程的成本仍然高居不下。 Although DMD wafers can be used in the current process to achieve a maskless process, the DMD wafer itself is expensive and has a limited irradiation area. Therefore, it is necessary to combine multiple DMD wafers into an array during the manufacturing process to improve production efficiency. In addition, DMD wafers The multiple micro lenses on the above are also prone to failure after switching the ON and OFF states for many times, so the cost of the manufacturing process is still high.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the various problems of the above-mentioned conventional technology has actually become a problem that the industry urgently needs to overcome.

鑑於上述習知技術之種種缺失,本發明提供一種微製像設備,包括:一投影裝置,係為光元件陣列,用以提供形成有一圖案之複數個光束;一準直元件,係用以修正該複數個光束,以形成複數個準直光束;一縮光元件,係用以縮小該複數個準直光束,以形成複數個縮光光束;以及一聚焦元件,係用以聚焦該複數個縮光光束形成複數個聚焦光束,以將該複數個聚焦光束所形成之該圖案成像在目標物上。 In view of the various deficiencies of the above-mentioned conventional technologies, the present invention provides a micro-imaging equipment, including: a projection device, which is an array of light elements, for providing a plurality of light beams forming a pattern; and a collimating element for correction The plurality of light beams are used to form a plurality of collimated light beams; a reduction element is used to reduce the plurality of collimated light beams to form a plurality of reduced light beams; and a focusing element is used to focus the plurality of reduced light beams The light beams form a plurality of focused beams to image the pattern formed by the plurality of focused beams on the target.

本發明提供一種微製像加工方法,包括:提供一包括有用以形成一圖案之複數個光束的光源;修正該複數個光束,以形成複數個準直光束;縮小該複數個準直光束,以形成複數個縮光光束;聚焦該複數個縮光光束聚焦,以形成複數個聚焦光束;以及將該複數個聚焦光束所形成的該圖案成像在目標物上。 The present invention provides a micro-imaging processing method, including: providing a light source including a plurality of light beams useful to form a pattern; correcting the plurality of light beams to form a plurality of collimated light beams; reducing the plurality of collimated light beams to Forming a plurality of reduced light beams; focusing the plurality of reduced light beams to form a plurality of focused light beams; and imaging the pattern formed by the plurality of focused light beams on the target object.

在一實施例中,更包括一分光元件,係設於該準直元件與該縮光元件之間,用以將該準直元件所產生之該複數個準直光束分光為複數個第一分光準直光束及複數個第二分光準直光束,以將該複數個第一分光準直光束投射至一檢測元件及將該複數個第二分光準直光束投射至該縮光元件上。 In one embodiment, it further includes a light splitting element, which is arranged between the collimating element and the light reducing element, for splitting the plurality of collimated light beams generated by the collimating element into a plurality of first light beams The collimated beams and the plurality of second split collimated beams are used to project the plurality of first split collimated beams to a detection element and the plurality of second split collimated beams to the light reduction element.

在一實施例中,更包括一遮光元件,係設於該分光元件與該縮光元件之間,用以遮擋該複數個第二分光準直光束。 In one embodiment, a light shielding element is further included, which is disposed between the light splitting element and the light reducing element to shield the plurality of second light splitting collimated light beams.

在一實施例中,更包括一處理模組,係通訊連接該檢測元件及該遮光元件,其中,該檢測元件檢測該複數個第一分光準直光束所形成之該圖案是否正確,若形成之該圖案係為正確者,則由該處理模組控制該遮光元件使該複數個第二分光準直光束投射至該縮光元件上,以經由該縮光元件形成該複數個縮光光束。 In one embodiment, it further includes a processing module that is communicatively connected to the detection element and the shading element, wherein the detection element detects whether the pattern formed by the plurality of first split collimated beams is correct, and if it is formed If the pattern is correct, the processing module controls the shading element to project the plurality of second split collimated light beams onto the light reduction element to form the plurality of light reduction beams through the light reduction element.

在一實施例中,該處理模組係通訊連接該投影裝置,若該檢測元件檢測該複數個第一分光準直光束所形成之該圖案係為不正確者,則由該處理模組調整該投影裝置所產生的該複數個光束,以重新形成該圖案。 In one embodiment, the processing module is communicatively connected to the projection device. If the detection element detects that the pattern formed by the plurality of first split collimated beams is incorrect, the processing module adjusts the The multiple light beams generated by the projection device are used to re-form the pattern.

在一實施例中,該縮光元件係依據可調倍率或固定倍率將該複數個準直光束縮小成該複數個縮光光束。 In one embodiment, the light reduction element reduces the plurality of collimated light beams into the plurality of light reduction beams according to an adjustable magnification or a fixed magnification.

在一實施例中,該投影裝置之該光元件陣列係為微發光二極體(Micro Light Emitting Diode,Micro LED)。 In one embodiment, the light element array of the projection device is a Micro Light Emitting Diode (Micro LED).

在一實施例中,該準直元件、該縮光元件及該聚焦元件為非球面元件或球面元件。 In an embodiment, the collimating element, the light reduction element and the focusing element are aspherical elements or spherical elements.

由上可知,本發明之微製像設備及其加工方法中,藉由微發光二極體(Micro-LED)所形成之光元件陣列提供已形成圖案之光源,藉此在製程上能減少光罩的成本,且能隨時因應需求改變圖案。此外,相較於習知技術利用DMD晶片之製程上,本發明利用微發光二極體(Micro-LED)配合準直元件、分光元件、縮光元件及聚焦元件之使用,以取代光源結合DMD晶片的結構,也大幅減少了無光罩製程上的成本。 It can be seen from the above that in the micro-imaging equipment and its processing method of the present invention, the light element array formed by the micro-light emitting diode (Micro-LED) provides the patterned light source, thereby reducing the light in the manufacturing process. The cost of the cover, and the pattern can be changed at any time in response to demand. In addition, compared to the conventional technology using DMD chip manufacturing process, the present invention uses micro-light emitting diodes (Micro-LED) to cooperate with collimating elements, light splitting elements, light reduction elements and focusing elements to replace the light source combined with DMD. The structure of the chip also greatly reduces the cost of the maskless manufacturing process.

1‧‧‧微製像設備 1‧‧‧Micro-imaging equipment

1a‧‧‧元件組 1a‧‧‧Component group

10‧‧‧投影裝置 10‧‧‧Projection device

100‧‧‧光束 100‧‧‧Beam

20‧‧‧準直元件 20‧‧‧collimation element

21‧‧‧第一校正元件 21‧‧‧First calibration element

210‧‧‧校正光束 210‧‧‧Corrected beam

22‧‧‧第一均值元件 22‧‧‧The first average component

220‧‧‧第一均值光束 220‧‧‧First mean beam

23‧‧‧第二均值元件 23‧‧‧The second mean value component

230‧‧‧第二均值光束 230‧‧‧Second Mean Beam

24‧‧‧第二校正元件 24‧‧‧Second calibration element

240‧‧‧準直光束 240‧‧‧Collimated beam

30‧‧‧分光元件 30‧‧‧Splitter element

300a‧‧‧第一分光準直光束 300a‧‧‧First beam collimated beam

300b‧‧‧第二分光準直光束 300b‧‧‧Second beam splitting collimated beam

301‧‧‧抗反射鍍膜 301‧‧‧Anti-reflective coating

302‧‧‧光束分離器鍍膜 302‧‧‧Beam splitter coating

303‧‧‧膠部 303‧‧‧Glue Department

303a‧‧‧第一表面 303a‧‧‧First surface

303b‧‧‧第二表面 303b‧‧‧Second surface

31‧‧‧縮光元件 31‧‧‧Light reduction element

310‧‧‧縮光光束 310‧‧‧Shrinking beam

32‧‧‧聚焦元件 32‧‧‧Focusing element

320‧‧‧聚焦光束 320‧‧‧Focused beam

40‧‧‧處理模組 40‧‧‧Processing Module

41‧‧‧檢測元件 41‧‧‧Detection element

42‧‧‧遮光元件 42‧‧‧Shading element

43‧‧‧基板 43‧‧‧Substrate

5‧‧‧3D列印裝置 5‧‧‧3D printing device

51‧‧‧容器 51‧‧‧Container

510‧‧‧開口 510‧‧‧Opening

511‧‧‧底部 511‧‧‧Bottom

52‧‧‧防粘玻璃 52‧‧‧Anti-stick glass

53‧‧‧光固化材料 53‧‧‧Light curing materials

54‧‧‧架體 54‧‧‧Frame

55‧‧‧三軸平台 55‧‧‧Three-axis platform

L、T‧‧‧光軸 L, T‧‧‧Optical axis

S‧‧‧容置空間 S‧‧‧accommodating space

第1圖係繪示本發明微製像設備之架構示意圖; Figure 1 is a schematic diagram showing the structure of the micro-imaging equipment of the present invention;

第2圖係繪示本發明之微製像加工方法之流程圖; Figure 2 is a flowchart showing the micro-imaging processing method of the present invention;

第3圖係繪示本發明之分光元件的剖面圖;以及 Figure 3 is a cross-sectional view of the spectroscopic element of the present invention; and

第4圖係繪示本發明之微製像設備的另一應用實施例。 Figure 4 shows another application embodiment of the micro-imaging equipment of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋 之範圍內。同時,本說明書中所引用之如「上」、「下」、「左」、「右」、「後」、「底」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings in this manual are only used to match the content disclosed in the manual for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment, without affecting the effects and objectives that can be achieved by the present invention, should still fall within the scope of the present invention. The technical content disclosed by the invention can cover Within the range. At the same time, the terms such as "upper", "lower", "left", "right", "rear", "bottom" and "one" cited in this manual are only for clarity of description, not For limiting the scope of the present invention, the change or adjustment of the relative relationship shall be regarded as the scope of the present invention without substantially changing the technical content.

第1圖係繪示本發明微製像設備1之架構示意圖。如第1圖所示,該微製像設備1包括有一投影裝置10、一準直元件20、一分光元件30、一縮光元件31、一聚焦元件32、一處理模組40、一檢測元件41以及一遮光元件42,用以在如一基板43之目標物上進行圖案化製程。在其他實施例中,該微製像設備1另可在該投影裝置10至該聚焦元件32之前、之後或二者之間設置其他所需之元件(如光學元件)。 FIG. 1 is a schematic diagram showing the structure of the micro imaging device 1 of the present invention. As shown in Figure 1, the micro imaging equipment 1 includes a projection device 10, a collimating element 20, a beam splitting element 30, a light reducing element 31, a focusing element 32, a processing module 40, and a detection element. 41 and a shading element 42 for performing a patterning process on a target such as a substrate 43. In other embodiments, the micro-imaging device 1 can also be provided with other required elements (such as optical elements) before, after, or between the projection device 10 and the focusing element 32.

該投影裝置10係為光元件陣列,用以提供複數個光束100之光源,且形成一圖案。該投影裝置10可為微發光二極體(Micro Light Emitting Diode,Micro LED),但不以此為限。 The projection device 10 is an array of light elements for providing a plurality of light beams 100 as light sources and forming a pattern. The projection device 10 can be a Micro Light Emitting Diode (Micro LED), but it is not limited to this.

於本實施例中,定義一光軸L(如第1圖所示)係為該投影裝置10所產生之光束100自該投影裝置10投射向該基板43之方向。 In this embodiment, an optical axis L (as shown in FIG. 1) is defined as the direction in which the light beam 100 generated by the projection device 10 is projected from the projection device 10 to the substrate 43.

該準直元件20係依據該光軸L之方向修正該投影裝置10所提供該複數個光束100,以使該複數個光束100成為複數個準直光束240,其中,該準直元件20包括依序排列或對應之一第一校正元件21、一第一均值元件22、一第二均值元件23及一第二校正元件24。 The collimating element 20 corrects the plurality of light beams 100 provided by the projection device 10 according to the direction of the optical axis L, so that the plurality of light beams 100 become a plurality of collimated light beams 240, wherein the collimating element 20 includes Arranged in sequence or corresponding to a first correction element 21, a first averaging element 22, a second averaging element 23, and a second correction element 24.

再者,該投影裝置10之光元件陣列提供該複數個光束100進入該第一校正元件21,該第一校正元件21初步地將該複數個光束100修正為水平沿著該光軸L之方向前進的複數個校正光束210,且該複數個校正光束210經由該第一均值元件22產生複數個第一均值光束220,以及該複數個第一均值光束220經由該第二均值元件23產生複數個第二均值光束230,以 透過該第一均值元件22及該第二均值元件23使複數個校正光束210的強度更加均勻且一致,最後由該第二校正元件24再次將該複數個第二均值光束230修正為水平沿著該光軸L之方向的該複數個準直光束240。 Furthermore, the optical element array of the projection device 10 provides the plurality of light beams 100 to enter the first correcting element 21, and the first correcting element 21 preliminarily corrects the plurality of light beams 100 to be horizontally along the direction of the optical axis L A plurality of correction light beams 210 are advancing, and the plurality of correction light beams 210 generate a plurality of first average light beams 220 through the first averaging element 22, and the plurality of first average light beams 220 generate a plurality of light beams through the second averaging element 23 The second mean beam 230, with Through the first averaging element 22 and the second averaging element 23, the intensity of the plurality of correction beams 210 is more uniform and consistent, and finally the second correction element 24 again corrects the plurality of second average beams 230 to be horizontally along The plurality of collimated light beams 240 in the direction of the optical axis L.

該分光元件30係用以將該準直元件20所產生之該複數個準直光束240分光為複數個第一分光準直光束300a及複數個第二分光準直光束300b,該分光元件30將該複數個第一分光準直光束300a投射至檢測元件41上,以檢測該複數個第一分光準直光束300a所形成的該圖案是否有光束強度不足、該圖案成像錯誤及光束偏移等狀況,其中,該檢測元件41可為感光耦合元件(Charge-coupled Device,CCD)。 The beam splitting element 30 is used to split the plurality of collimated beams 240 generated by the collimating element 20 into a plurality of first splitting collimated beams 300a and a plurality of second splitting collimated beams 300b, and the beam splitting element 30 will The plurality of first split collimated beams 300a are projected onto the detection element 41 to detect whether the pattern formed by the plurality of first split collimated beams 300a has insufficient beam intensity, imaging errors of the pattern, and beam deviation. Wherein, the detection element 41 can be a charge-coupled device (CCD).

另外,該分光元件30將該複數個第二分光準直光束300b投射至該遮光元件42上,該遮光元件42用以遮擋該複數個第二分光準直光束,且該處理模組40通訊連結該投影裝置10、該檢測元件41及該遮光元件42。 In addition, the light splitting element 30 projects the plurality of second splitting collimated light beams 300b onto the shading element 42, which is used to shield the plurality of second splitting collimated light beams, and the processing module 40 is connected in communication The projection device 10, the detection element 41 and the shading element 42.

亦即,該檢測元件41用以檢測該複數個第一分光準直光束300a所形成之圖案,若所形成之該圖案係為正確者,則由該檢測元件41反饋給該處理模組40,且該處理模組40控制該遮光元件42使該複數個第二分光準直光束300b水平沿著該光軸L之方向投射至該縮光元件31,由該縮光元件31縮小該複數個第二分光準直光束300b,以形成複數個縮光光束310;反之,若該檢測元件41檢測該複數個第一分光準直光束300a所形成之該圖案係為不正確者,則由該檢測元件41反饋給該處理模組40,且該處理模組40調整該投影裝置10所產生的該複數個光束100,以重新形成該圖案。 That is, the detection element 41 is used to detect the pattern formed by the plurality of first split collimated beams 300a, and if the formed pattern is correct, the detection element 41 feeds back to the processing module 40, And the processing module 40 controls the shading element 42 to project the plurality of second split collimated beams 300b horizontally along the direction of the optical axis L to the light reduction element 31, and the light reduction element 31 reduces the plurality of second light beams. The two-splitting collimated light beam 300b is used to form a plurality of reduced light beams 310; on the contrary, if the detection element 41 detects that the pattern formed by the plurality of first splitting collimated light beams 300a is incorrect, then the detection element 41 is fed back to the processing module 40, and the processing module 40 adjusts the plurality of light beams 100 generated by the projection device 10 to re-form the pattern.

當調整該投影裝置10所產生的該複數個光束100,並已排除該複數個第一分光準直光束300a的光束強度不足、該圖案成像錯誤及光束 偏移等狀況後,該處理模組40控制該遮光元件42以使該複數個第二分光準直光束300b水平沿著該光軸L之方向投射至該縮光元件31。 When adjusting the plurality of light beams 100 generated by the projection device 10, the insufficient beam intensity of the plurality of first split collimated light beams 300a, the pattern imaging error, and the light beam have been eliminated After the deviation and other conditions, the processing module 40 controls the shading element 42 so that the plurality of second split collimated light beams 300b are horizontally projected to the light reduction element 31 along the direction of the optical axis L.

於一實施例中,該縮光元件31係依據可調倍率或固定倍率將該複數個第二分光準直光束300b縮小成複數個縮光光束310。 In one embodiment, the light reduction element 31 reduces the plurality of second split collimated light beams 300 b into a plurality of light reduction light beams 310 according to an adjustable magnification or a fixed magnification.

該聚焦元件32係將該縮光元件31所產生之該複數個縮光光束310聚焦形成複數個聚焦光束320。 The focusing element 32 focuses the plurality of reduced light beams 310 generated by the light reduction element 31 to form a plurality of focused light beams 320.

該聚焦元件32產生之複數個聚焦光束320映射在該基板43上,以形成該圖案,其中,一材料層形成於該基板43上,以便該圖案形成於該基板43上。 A plurality of focused beams 320 generated by the focusing element 32 are mapped on the substrate 43 to form the pattern, wherein a material layer is formed on the substrate 43 so that the pattern is formed on the substrate 43.

於一實施例中,該準直元件20、該縮光元件31及該聚焦元件32為球面鏡或非球面鏡。 In one embodiment, the collimating element 20, the light reducing element 31 and the focusing element 32 are spherical mirrors or aspherical mirrors.

第2圖係繪示本發明之微製像加工方法之流程圖。以下將詳述第2圖所示之微製像加工方法,並請一併參閱上述第1圖。 Figure 2 is a flow chart of the micro-imaging processing method of the present invention. The micro-image processing method shown in Figure 2 will be described in detail below. Please also refer to Figure 1 above.

該微製像加工方法係包括:提供一包括有用以形成一圖案之複數個光束100的光源;修正該複數個光束100,以形成複數個準直光束240;縮小該複數個準直光束240,以形成複數個縮光光束310;聚焦該複數個縮光光束310,以形成複數個聚焦光束320;以及將該複數個聚焦光束320所形成的該圖案成像在目標物上。 The micro-imaging processing method includes: providing a light source including a plurality of light beams 100 useful for forming a pattern; modifying the plurality of light beams 100 to form a plurality of collimated light beams 240; reducing the plurality of collimated light beams 240, To form a plurality of reduced light beams 310; focus the plurality of reduced light beams 310 to form a plurality of focused light beams 320; and image the pattern formed by the plurality of focused light beams 320 on the target object.

如第2圖所示,本發明之微製像加工方法可包括下列步驟S21至步驟S27之技術內容。 As shown in Fig. 2, the micro-imaging processing method of the present invention may include the following technical content from step S21 to step S27.

在步驟S21中,由一投影裝置10提供包括有複數個光束之光源,且該複數個光束形成一圖案,其中,該投影裝置10係為由微發光二極體(Micro Light Emitting Diode,Micro LED)組成之光元件陣列。 In step S21, a projection device 10 provides a light source including a plurality of light beams, and the plurality of light beams form a pattern, wherein the projection device 10 is made of a micro light emitting diode (Micro Light Emitting Diode, Micro LED ) Composed of an array of light elements.

在步驟S22中,一準直元件20係依據光軸L之方向修正該複數個光束100之方向,以使該複數個光束100成為複數個準直光束240,其中,該準直元件20包括依序排列或對應之一第一校正元件21、一第一均值元件22、一第二均值元件23及一第二校正元件24。 In step S22, a collimating element 20 corrects the direction of the plurality of light beams 100 according to the direction of the optical axis L, so that the plurality of light beams 100 become a plurality of collimated light beams 240, wherein the collimating element 20 includes Arranged in sequence or corresponding to a first correction element 21, a first averaging element 22, a second averaging element 23, and a second correction element 24.

該投影裝置10之光元件陣列提供該複數個光束100進入該第一校正元件21,該第一校正元件21初步地將該複數個光束100修正為水平沿著該光軸L前進的複數個校正光束210,且該複數個校正光束210經由該第一均值元件22產生複數個第一均值光束220,以及該複數個第一均值光束220經由該第二均值元件23產生複數個第二均值光束230,以透過該第一均值元件22及該第二均值元件23令複數個校正光束210的強度更加均勻且一致,最後由該第二校正元件24再次將該複數個第二均值光束230修正為水平沿著該光軸L之方向的複數個準直光束240。 The optical element array of the projection device 10 provides the plurality of light beams 100 to enter the first correction element 21, and the first correction element 21 preliminarily corrects the plurality of light beams 100 into a plurality of corrections that advance horizontally along the optical axis L Light beam 210, and the plurality of correction light beams 210 generate a plurality of first average light beams 220 through the first averaging element 22, and the plurality of first average light beams 220 generate a plurality of second average light beams 230 through the second averaging element 23 , To make the intensity of the plurality of correction beams 210 more uniform and consistent through the first averaging element 22 and the second averaging element 23, and finally the second correction element 24 corrects the plurality of second average beams 230 to be horizontal again A plurality of collimated light beams 240 along the direction of the optical axis L.

在步驟S23中,一分光元件30係將該準直元件20所產生之該複數個準直光束240分光為複數個第一分光準直光束300a及複數個第二分光準直光束300b。 In step S23, a beam splitting element 30 splits the plurality of collimated beams 240 generated by the collimating element 20 into a plurality of first splitting collimated beams 300a and a plurality of second splitting collimated beams 300b.

在步驟S24中,該分光元件30將該複數個第一分光準直光束300a投射至一檢測元件41上,以檢測該複數個第一分光準直光束300a所形成的該圖案是否有光束強度不足、該圖案成像錯誤以及光束偏移等狀況,另外,該分光元件30將該複數個第二分光準直光束300b投射至該遮光元件42上,且一處理模組40通訊連結該投影裝置10、該檢測元件41及該遮光元件42。若該檢測元件41檢測結果正常,則該檢測元件41反饋給該處理模組40,且該處理模組40控制該遮光元件42使該複數個第二分光準直光束300b投射至該縮光元件31;反之,若該檢測元件41檢測結果異常,則該檢測元 件41反饋給該處理模組40,且該處理模組40調整該投影裝置10所產生的該複數個光束100,如此,回到步驟S21,重新形成該圖案。 In step S24, the beam splitting element 30 projects the plurality of first split collimated beams 300a onto a detection element 41 to detect whether the pattern formed by the plurality of first split collimated beams 300a has insufficient beam intensity , The pattern imaging error and beam deviation, in addition, the beam splitting element 30 projects the plurality of second split collimated beams 300b onto the shading element 42, and a processing module 40 is communicatively connected to the projection device 10, The detection element 41 and the shading element 42. If the detection result of the detection element 41 is normal, the detection element 41 feeds back to the processing module 40, and the processing module 40 controls the shading element 42 to project the plurality of second split collimated beams 300b to the light reduction element 31; On the contrary, if the detection result of the detection element 41 is abnormal, the detection element The component 41 is fed back to the processing module 40, and the processing module 40 adjusts the plurality of light beams 100 generated by the projection device 10, and thus returns to step S21 to form the pattern again.

在步驟S25中,一縮光元件31接收該複數個第二分光準直光束300b,且係依據可調倍率或固定倍率縮小該複數個第二分光準直光束300b以產生複數個縮光光束310。 In step S25, a light reduction element 31 receives the plurality of second split collimated light beams 300b, and reduces the plurality of second split collimated light beams 300b according to an adjustable magnification or a fixed magnification to generate a plurality of reduced light beams 310 .

在步驟S26中,透過一聚焦元件32將該縮光元件31所產生之該複數個縮光光束310聚焦形成複數個聚焦光束320。 In step S26, the plurality of reduced light beams 310 generated by the reduced light element 31 are focused through a focusing element 32 to form a plurality of focused light beams 320.

在步驟S27中,該聚焦元件32產生之複數個聚焦光束320映射在上方具有材料層之基板43上,以便在該基板43上形成該圖案。 In step S27, a plurality of focused light beams 320 generated by the focusing element 32 are mapped on the substrate 43 with a material layer above, so as to form the pattern on the substrate 43.

第3圖係繪示本發明之分光元件30的剖面圖。如第3圖所示,該分光元件30包括有抗反射鍍膜(Antireflective coating,AR coating)301、光束分離器鍍膜(Beam Splitter coating,BS coating)302及膠部303。 FIG. 3 is a cross-sectional view of the spectroscopic element 30 of the present invention. As shown in FIG. 3, the beam splitter element 30 includes an antireflective coating (AR coating) 301, a beam splitter coating (BS coating) 302 and a glue part 303.

於本實施例中,該分光元件30係為矩形立體的透鏡,且該分光元件30內部設有該膠部303,其中,該膠部303具有相對之一第一表面303a及一第二表面303b,該第二表面303b與該光軸L形成夾角α(如第3圖所示),該夾角α例如為45°,且該第一表面303a上設有該光束分離器鍍膜302,用以將該複數個準直光束240分光為複數個第一分光準直光束300a及複數個第二分光準直光束300b,此外,該分光元件30表面設有抗反射鍍膜301,用以防止該複數個準直光束240、複數個第一分光準直光束300a及複數個第二分光準直光束300b等光束產生反射,而造成該圖案光束強度不足、該圖案成像錯誤及光束偏移等狀況。 In this embodiment, the light splitting element 30 is a rectangular three-dimensional lens, and the glue part 303 is provided inside the light splitting element 30, wherein the glue part 303 has a first surface 303a and a second surface 303b opposite to each other. , The second surface 303b and the optical axis L form an included angle α (as shown in Figure 3), the included angle α is, for example, 45°, and the first surface 303a is provided with the beam splitter coating 302 for removing The plurality of collimated beams 240 are split into a plurality of first splitting collimated beams 300a and a plurality of second splitting collimated beams 300b. In addition, the surface of the beam splitting element 30 is provided with an anti-reflection coating 301 to prevent the plurality of collimated beams The straight beam 240, the plurality of first split collimated beams 300a, and the plurality of second split collimated beams 300b are reflected, resulting in insufficient beam intensity of the pattern, imaging errors of the pattern, and beam deviation.

由上可知,本發明之微製像設備及其加工方法中,藉由微發光二極體(Micro-LED)所形成之光元件陣列提供已形成圖案之光源,經過 該準直元件20、該分光元件30、該縮光元件31及該聚焦元件32將該圖案映設於該基板上,藉此在製程上能減少光罩的成本,且能隨時因應需求改變該圖案。此外,相較於習知技術利用DMD晶片之製程上,本發明利用微發光二極體(Micro-LED)搭配該準直元件20、該分光元件30、該縮光元件31及該聚焦元件32,取代光源結合DMD晶片的結構,大幅減少了製程上的成本。 It can be seen from the above that in the micro-imaging equipment and its processing method of the present invention, the light element array formed by the micro-light-emitting diode (Micro-LED) provides a patterned light source. The collimating element 20, the beam splitting element 30, the light reducing element 31, and the focusing element 32 map the pattern on the substrate, thereby reducing the cost of the photomask in the manufacturing process, and changing the pattern at any time according to demand. pattern. In addition, compared to the conventional process using DMD chips, the present invention uses a micro-light emitting diode (Micro-LED) to match the collimating element 20, the beam splitting element 30, the light reducing element 31, and the focusing element 32. , Replacing the light source combined with the DMD chip structure, greatly reducing the cost of the manufacturing process.

第4圖係繪示本發明之微製像設備1的另一應用實施例。如第4圖所示,一3D列印裝置5係包括:一微製像設備1,於本實施例中,該微製像設備1係包括一投影裝置10及一元件組1a,該元件組1a可包括如前所述之一準直元件20、一分光元件30、一縮光元件31、一聚焦元件32、一處理模組40、一檢測元件41及一遮光元件42,其利用該微製像設備1產生複數個聚焦光束320以形成一圖案;一容器51,係設於一三軸平台55上,且該容器51具有相對之一開口510和一底部511以及連通該開口510之一容置空間S,其中,該容置空間S裝有一光固化材料53,且一架體54設於該容器51之容置空間S中並接觸該底部511;以及一防粘玻璃52係遮蓋於該容器51之開口510上。 Fig. 4 shows another application embodiment of the micro imaging device 1 of the present invention. As shown in Fig. 4, a 3D printing device 5 includes: a micro imaging device 1. In this embodiment, the micro imaging device 1 includes a projection device 10 and a component group 1a. The component group 1a may include a collimating element 20, a beam splitting element 30, a light reducing element 31, a focusing element 32, a processing module 40, a detecting element 41, and a shading element 42 as described above, which use the micro The imaging device 1 generates a plurality of focused beams 320 to form a pattern; a container 51 is arranged on a three-axis platform 55, and the container 51 has an opening 510 and a bottom 511 opposite to each other, and one of the openings 510 is connected to each other. The accommodating space S, where a photocurable material 53 is installed in the accommodating space S, and a frame 54 is disposed in the accommodating space S of the container 51 and contacts the bottom 511; and a non-stick glass 52 is covered On the opening 510 of the container 51.

於本實施例中,定義一光軸T(如第4圖所示)係為該投影裝置10所產生之光束100自該投影裝置10投射向該架體54之方向。該3D列印裝置5將欲列印之一目標物的圖形切分成複數個圖案,並透過該微製像設備1產生該複數個聚焦光束320以逐一形成該複數個圖案,且該複數個聚焦光束320沿著該光軸T穿透該防粘玻璃52投射於該架體54或該底部511上,使該光固化材料53於該架體54或該底部511上逐一形成該複數個圖案,且該複數個圖案彼此堆疊形成該目標物。 In this embodiment, an optical axis T (as shown in FIG. 4) is defined as the direction in which the light beam 100 generated by the projection device 10 is projected from the projection device 10 to the frame 54. The 3D printing device 5 cuts the pattern of a target to be printed into a plurality of patterns, and generates the plurality of focused beams 320 through the micro imaging device 1 to form the plurality of patterns one by one, and the plurality of focused patterns The light beam 320 penetrates the release glass 52 along the optical axis T and is projected onto the frame 54 or the bottom 511, so that the photocurable material 53 forms the plurality of patterns on the frame 54 or the bottom 511 one by one, And the plurality of patterns are stacked on each other to form the target.

上述實施形態僅例示性說明本發明之原理、特點及其功效,並非用以限制本發明之可實施範疇,任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施形態進行修飾與改變。任何運用本發明所揭示內容而完成之等效改變及修飾,均仍應為下述之申請專利範圍所涵蓋。因此,本發明之權利保護範圍,應如申請專利範圍所列。 The above-mentioned embodiments only illustrate the principles, features and effects of the present invention, and are not intended to limit the scope of implementation of the present invention. Anyone who is familiar with the art can comment on the above without departing from the spirit and scope of the present invention. Modifications and changes to the implementation form. Any equivalent changes and modifications made by using the contents disclosed in the present invention should still be covered by the following patent application scope. Therefore, the protection scope of the present invention should be as listed in the scope of the patent application.

1‧‧‧微製像設備 1‧‧‧Micro-imaging equipment

10‧‧‧投影裝置 10‧‧‧Projection device

100‧‧‧光束 100‧‧‧Beam

20‧‧‧準直元件 20‧‧‧collimation element

21‧‧‧第一校正元件 21‧‧‧First calibration element

210‧‧‧校正光束 210‧‧‧Corrected beam

22‧‧‧第一均值元件 22‧‧‧The first average component

220‧‧‧第一均值光束 220‧‧‧First mean beam

23‧‧‧第二均值元件 23‧‧‧The second mean value component

230‧‧‧第二均值光束 230‧‧‧Second Mean Beam

24‧‧‧第二校正元件 24‧‧‧Second calibration element

240‧‧‧準直光束 240‧‧‧Collimated beam

30‧‧‧分光元件 30‧‧‧Splitter element

300a‧‧‧第一分光準直光束 300a‧‧‧First beam collimated beam

300b‧‧‧第二分光準直光束 300b‧‧‧Second beam splitting collimated beam

31‧‧‧縮光元件 31‧‧‧Light reduction element

310‧‧‧縮光光束 310‧‧‧Shrinking beam

32‧‧‧聚焦元件 32‧‧‧Focusing element

320‧‧‧聚焦光束 320‧‧‧Focused beam

40‧‧‧處理模組 40‧‧‧Processing Module

41‧‧‧檢測元件 41‧‧‧Detection element

42‧‧‧遮光元件 42‧‧‧Shading element

43‧‧‧基板 43‧‧‧Substrate

L‧‧‧光軸 L‧‧‧Optical axis

Claims (12)

一種微製像設備,包括:一投影裝置,係為光元件陣列,用以提供形成有一圖案之複數個光束;一準直元件,係用以修正該複數個光束,以形成複數個準直光束;一分光元件,係用以分光該複數個準直光束,以形成複數個第一分光準直光束及複數個第二分光準直光束,且將該複數個第一分光準直光束投射至一檢測元件;一縮光元件,係用以縮小該複數個第二分光準直光束,以形成複數個縮光光束;以及一聚焦元件,係用以聚焦該複數個縮光光束形成複數個聚焦光束,以將該複數個聚焦光束所形成之該圖案成像在目標物上。 A micro-imaging equipment includes: a projection device, which is an array of light elements, used to provide a plurality of light beams forming a pattern; a collimating element, which is used to correct the plurality of light beams to form a plurality of collimated light beams ; A beam splitting element for splitting the plurality of collimated beams to form a plurality of first splitting collimated beams and a plurality of second splitting collimated beams, and projecting the plurality of first splitting collimated beams to a Detection element; a reduction element for reducing the plurality of second split collimated beams to form a plurality of reduced beams; and a focusing element for focusing the plurality of reduced beams to form a plurality of focused beams , To image the pattern formed by the plurality of focused beams on the target. 如申請專利範圍第1項所述之微製像設備,更包括一遮光元件,係設於該分光元件與該縮光元件之間,用以遮擋該複數個第二分光準直光束。 The micro-imaging equipment described in the first item of the scope of patent application further includes a light-shielding element, which is arranged between the light-splitting element and the light-shrinking element to shield the plurality of second light-splitting collimated light beams. 如申請專利範圍第2項所述之微製像設備,更包括一處理模組,係通訊連接該檢測元件及該遮光元件,其中,該檢測元件檢測該複數個第一分光準直光束所形成之該圖案是否正確,若形成之該圖案係為正確者,則由該處理模組控制該遮光元件使該複數個第二分光準直光束投射至該縮光元件上,以經由該縮光元件形成該複數個縮光光束。 For example, the micro-imaging equipment described in item 2 of the scope of patent application further includes a processing module, which is communicatively connected to the detection element and the shading element, wherein the detection element detects the plurality of first split collimated light beams. Is the pattern correct? If the pattern formed is correct, the processing module controls the shading element to project the plurality of second split collimated beams onto the light reduction element to pass through the light reduction element The plurality of reduced light beams are formed. 如申請專利範圍第3項所述之微製像設備,其中,該處理模組係通訊連接該投影裝置,若該檢測元件檢測該複數個第一分光準直光束所形成之該圖案係為不正確者,則由該處理模組調整該投影裝置所產生的該複數個光束,以重新形成該圖案。 For example, the micro-imaging equipment described in item 3 of the scope of patent application, wherein the processing module is communicatively connected to the projection device, and if the detection element detects that the pattern formed by the plurality of first split collimated beams is not If it is correct, the processing module adjusts the plurality of light beams generated by the projection device to form the pattern again. 如申請專利範圍第1項所述之微製像設備,其中,該縮光元件係依據可調倍率或固定倍率將該複數個第二分光準直光束縮小成該複數個縮光光束。 For the micro-imaging device described in item 1 of the scope of patent application, the reduction element reduces the plurality of second split collimated light beams into the plurality of reduced light beams according to an adjustable magnification or a fixed magnification. 如申請專利範圍第1項所述之微製像設備,其中,該投影裝置之該光元件陣列係為微發光二極體(Micro Light Emitting Diode,Micro LED)。 According to the micro-imaging equipment described in item 1 of the scope of patent application, the light element array of the projection device is a micro light emitting diode (Micro Light Emitting Diode, Micro LED). 如申請專利範圍第1項所述之微製像設備,其中,該準直元件、該縮光元件及該聚焦元件係為非球面元件或球面元件。 As described in the first item of the patent application, the micro-imaging device, wherein the collimating element, the light reduction element and the focusing element are aspherical elements or spherical elements. 一種微製像加工方法,包括:提供一包括有用以形成一圖案之複數個光束的光源;修正該複數個光束,以形成複數個準直光束;分光該複數個準直光束,以形成複數個第一分光準直光束及複數個第二分光準直光束;縮小該複數個第二分光準直光束,以形成複數個縮光光束;聚焦該複數個縮光光束,以形成複數個聚焦光束;以及將該複數個聚焦光束所形成的該圖案成像在目標物上。 A micro-imaging processing method includes: providing a light source including a plurality of light beams useful to form a pattern; correcting the plurality of light beams to form a plurality of collimated light beams; and splitting the plurality of collimated light beams to form a plurality of collimated light beams The first splitting collimated beam and the plurality of second splitting collimated beams; reducing the plurality of second splitting collimated beams to form a plurality of reduced beams; focusing the plurality of reduced beams to form a plurality of focused beams; And the pattern formed by the plurality of focused beams is imaged on the target. 如申請專利範圍第8項所述之微製像加工方法,更包括檢測該複數個第一分光準直光束所形成之該圖案是否正確,以在形成之該圖案係為正確者時,調整該複數個第二分光準直光束以形成該複數個縮光光束。 The micro-imaging processing method described in item 8 of the scope of patent application further includes detecting whether the pattern formed by the plurality of first split collimated beams is correct, so as to adjust the pattern when the pattern formed is correct. A plurality of second beams are collimated to form the plurality of reduced beams. 如申請專利範圍第9項所述之微製像加工方法,其中,若形成之該圖案係為不正確者時,重新調整該複數個光束以形成該圖案。 The micro-imaging processing method described in item 9 of the scope of patent application, wherein, if the pattern formed is incorrect, the plurality of light beams are re-adjusted to form the pattern. 如申請專利範圍第8項所述之微製像加工方法,其中,該複數個縮光光束係依據可調倍率或固定倍率將該複數個第二分光準直光束縮小而形成者。 The micro-imaging processing method described in item 8 of the scope of patent application, wherein the plurality of reduced light beams are formed by reducing the plurality of second split collimated light beams according to an adjustable magnification or a fixed magnification. 如申請專利範圍第8項所述之微製像加工方法,其中,該光源係來自微發光二極體(Micro Light Emitting Diode,Micro LED)。 The micro-imaging processing method described in item 8 of the scope of patent application, wherein the light source is from a micro light emitting diode (Micro Light Emitting Diode, Micro LED).
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
TW201312290A (en) * 2011-08-16 2013-03-16 Asml Netherlands Bv Lithographic apparatus, programmable patterning device and lithographic method
TW201734663A (en) * 2015-12-30 2017-10-01 Asml荷蘭公司 Method and apparatus for direct write maskless lithography
US20190227442A1 (en) * 2016-07-19 2019-07-25 Asml Netherlands B.V. Apparatus for direct write maskless lithography
TW201931016A (en) * 2017-10-27 2019-08-01 美商應用材料股份有限公司 Empirical detection of lens aberration for diffraction-limited optical system
CN110133860A (en) * 2018-02-09 2019-08-16 中强光电股份有限公司 Display device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1167980A (en) * 1982-05-14 1984-05-22 Ronald S. Hershel Apparatus for projecting a series of images onto dies of a semiconductor wafer
JP2836180B2 (en) * 1990-04-20 1998-12-14 キヤノン株式会社 Position detection device
JPH07119575B2 (en) * 1990-06-15 1995-12-20 松下電器産業株式会社 Exposure equipment
JP2001168018A (en) * 1999-12-13 2001-06-22 Canon Inc Device and method for exposing charged corpuscular beam, determining method for exposure correction data and method for producing device by applying the same method
JP4654349B2 (en) * 2001-03-28 2011-03-16 レーザーテック株式会社 Defect inspection system for phase shift mask
CN1294455C (en) * 2001-11-27 2007-01-10 Asml荷兰有限公司 Imaging apparatus
SG138445A1 (en) * 2003-02-14 2008-01-28 Asml Netherlands Bv Device and method for wafer alignment with reduced tilt sensitivity
JP4356064B2 (en) * 2003-07-08 2009-11-04 キヤノン株式会社 Charged particle beam exposure apparatus and device manufacturing method using the apparatus
US7342238B2 (en) * 2005-08-08 2008-03-11 Kla-Tenor Technologies Corp. Systems, control subsystems, and methods for projecting an electron beam onto a specimen
US7839487B2 (en) * 2006-04-13 2010-11-23 Asml Holding N.V. Optical system for increasing illumination efficiency of a patterning device
JP2010039347A (en) * 2008-08-07 2010-02-18 Mejiro Precision:Kk Projection exposure apparatus
TW201102760A (en) * 2009-07-07 2011-01-16 Yun Xiang Technology Inc Maskless microlithography system and method thereof
KR101087787B1 (en) * 2010-11-05 2011-11-30 주식회사 나래나노텍 Line light source and light source module for exposure apparatus, and exposure apparatus and system for forming patterns having the same
CN105018679A (en) * 2015-08-10 2015-11-04 本溪冶炼集团有限公司 Final deoxidizer aluminum iron alloy for steelmaking and pressing preparation method of final deoxidizer aluminum iron alloy
WO2017153069A1 (en) * 2016-03-07 2017-09-14 Asml Netherlands B.V. Level sensor and lithographic apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
TW201312290A (en) * 2011-08-16 2013-03-16 Asml Netherlands Bv Lithographic apparatus, programmable patterning device and lithographic method
TW201734663A (en) * 2015-12-30 2017-10-01 Asml荷蘭公司 Method and apparatus for direct write maskless lithography
US20190227442A1 (en) * 2016-07-19 2019-07-25 Asml Netherlands B.V. Apparatus for direct write maskless lithography
TW201931016A (en) * 2017-10-27 2019-08-01 美商應用材料股份有限公司 Empirical detection of lens aberration for diffraction-limited optical system
CN110133860A (en) * 2018-02-09 2019-08-16 中强光电股份有限公司 Display device

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