201102760 六、發明說明： 【發明所屬之技術領域】 本案係關於一種微影系統與方法，尤指一種無光罩微 影系統與方法。 【先前技術】 在微電子元件製程中，為使元件可以朝高積集度、高 功能化以及更細小線寬的方向發展，微影技術的突破與否 • 扮演著很重要且關鍵的角色。傳統的微影製程係使用微影 系統以及光罩，並應用光學成像的原理將光罩上的圖案 (pattern)轉移於一工作片之目標區域上，其中該工作片可包 含塗佈感光材料之半導體基板，此外，該光罩可為平坦且 透明的石英構成，且其表面可覆蓋一層鉻膜，以提供欲轉 移至該工作片之圖案。 請參閱第一圖，其係顯示以傳統微影系統將光罩圖案 轉移於工作片之架構示意圖。如第一圖所示，為了將設計 ® 好的線路圖案完整且精確地複製到工作片上，首先需將設 計好的圖案製作成光罩10。然後，微影系統1的光源11 發出光線，並經過透鏡12聚光及導光至光罩10，此時， 只有經過光罩10透明區域的部分可以通過而成像在工作 片2表面。該工作片2可包括基板20，該基板20之表面 事先需經清潔處理，然後再形成一墊氧化層21以及塗覆類 似底片功能的感光材料22，或稱為光阻層（photoresist layer)。通過透鏡12及光罩10的光線會與感光材料22產 生反應，通常稱此步驟為曝光。 201102760 曝光後的工作片2需再經顯影（development)步驟，以 化學方式處理工作片2上曝光與未曝光的感光材料22 ’即 可將光罩10上的圖案完整地轉移到工作片2上’然後接續 其他的製程。通常，在不同的微影製程中’可以視需要選 擇使用不同的感光材料’以移除或保留選定的圖案。請參 閱第二圖A與B ’其係顯示使用正光阻劑為感光材料進行 微影製程之流程結構示意圖。如第二圖A與B所示，工作 片2之感光材料22經光罩10阻擔而未曝光的部份可以保 留於工作片2上，曝光的部份最後則被移除。請參閱第三 圖A與B，其係顯示使用負光阻劑為感光材料進行微影製 程之流程結構示意圖。如第三圖A與B所示，工作片2之 感光材料22經光罩10阻擂而未曝光的部份最後被移除’ 曝光的部份則保留於工作片2上。 然而，光罩的製作、使用與管理常會造成業者的負擔 且產生許多問題。舉例而言，為因應不同產品的需求，業 者常需預先製作具不同轉移圖案的光罩，然而，光罩的成 本較高，通常佔每一個半導體元件成本的約十分之一至五 分之一 ’因而使元件的製造成本無法降低。此外，光罩的 製作與檢驗費時，且於檢驗後若有問題則必須重製光罩， 因此易造成出貨期程的延宕。另外，由於積體電路佈局的 線路寬度變得愈來愈細，微影技術需要不斷地將曝光波長 、缩& ’以提升其解析度，而如此將會面臨到光學成像技術 的瓶’員光學鄰近效應修正（Optical Proximity Correction， opC)疋針對晶片中細微的線條和間距，在光罩上修正，以 減夕曝光後的失真，在不改變曝光波長的情況下，可將解 201102760 析度再提升一些。光學鄰近修正技術便是將繞射的效應考 慮進去，為了補償曝光後圖案的失真，藉由修改光罩上的 圖案’使產生的繞射光在疊加後能得到符合實際要求的圖 案與線寬。例如’欲在晶圓上製造長方形圖案，光罩上對 應的圖案不再是相同的長方形，而必需在稜角處做一些變 化，以消除繞射造成稜角鈍化的現象。雖然，進行光學鄰 近效應修正（optical proximity correction，OPC)可將高成本 的光罩重製過程和上市時間延誤減至較少，但仍需增加執 行光學鄰近效應修正程序的成本以及時間。 另外，光罩圖案與設計不易保密與控管，易造成機密 資料流出，不利於管理，且大量光罩的保存與維護亦會造 成龐大的管理與維護費用支出。此外，當光罩圖案產生問 題而無法即時檢測出時，亦可能於應用於製程後產生不良 產品而必需重製，造成嚴重損失與延誤出貨的時間。另一 方面，當微影製程中使用光罩時，由於必需準確對位，因 此相對地使製程較為費時，不利於量產。 因此，實有必要發展一種無光罩微影系統與方法，以 解決傳統微影系統與方法所面臨之問題。 【發明内容】 本案之目的在於提供一種無光罩微影系統，於進行微 影製程時無需使用光罩即可將所需線路或結構_案直接轉 移至一工作片上，如此不只可以降低產品的製造成本、降 低製程時間及利於量產，且可以避免光罩製作、檢驗、重 製、使用與管理方面所可能產生的成本浪費、時間延宕、 201102760 產品重製、光罩圖案保密與控管不易等問題。 本案之另—目的在於提供—種無衫微影系統及方 法，於進行«彡製程時無需制光罩且無需執行光學鄰近 效應修正程序，如此可以節省成本以及製程時間。 為達上述目的，本案提供—種無光罩微影系0统，包含： 光源，係架構於提供照明光束；數位控制光開關陣列，設 置^明光束之傳遞路徑’且包含複數個數位控制光開關 儿件’該複數個數位控制光開關元件係分财程式控制地 導引或不導引該照明光束，俾產生影像光束朝向一工作 片；光栅裴置，設置於數位控制光開關陣列鱼工作片之門， 且包含複數個光柵窗，以使至少部分之影像光束通過；曰投 :設置於光栅裝置與工作片之間，用以將數位控 m ㈣列與光栅裝置所產生的影像光束聚焦並將影像 光束之衫像圖案成像於H以及控制裝置，連接於數 讀列’以依據一影像圖案控制複數個數位控 制先開關元件分別⑽於導引或不導㈣照明総，使數 位控制光開_列產生該影絲束朝向該 像圖案成像於工作片。 作片俾將如 描供述目的*案提供一種無光罩微影方法，包含: ，制：影系ϊ ’該無光罩微影系統包含光源、數位 控制先開關陣列、光栅裴置、投影透鏡組以及控制裝置， 其中該數位控制光開_列包含複數個數位; 包含複數個光柵窗;以該光;提供;心 :，以及依據控制裝置之一影像圖案 光開i件分卿換於料或科㈣料光束，使== 201102760 位控制光開關陣列產生一影像光束，並使該影像光束經由 光柵裝置之複數個光柵窗以及投影透鏡組以將影像光束之 影像圖案成像於一工作片。 【實施方式】 體現本案特徵與優點的一些典型實施例將在後段的說 明中詳細敘述。應理解的是本案能夠在不同的態樣上具有 Φ 各種的變化，其皆不脫離本案的範圍，且其中的說明及圖 示在本質上係當作說明之用，而非用以限制本案。 凊參閱第四圖，其係顯示本案較佳實施例之無光罩微 影系統架構示意圖。如第四圖所示，本案之無光罩微影系 統 3(maskless microlithography system)主要包含光源 31、 數位控制光開關陣列32、光柵裝置33、投影透鏡組34以 及控制裝置35。其中，光源31係架構於提供一照明光束。 數位控制光開關陣列32係設置於該照明光束之傳遞路 φ 徑’且包含複數個數位控制光開關元件320，例如反射式 之數位微型反射鏡元件（Digital Micromirror Device，DMD) 或牙透式之液晶光閥元件（liquid crystal light valve devices)，該複數個數位控制光開關元件32〇係分別可程式 控制地導引（亦即數位控制光開關元件為“ON，，狀態）或不 導引（亦即數位控制光開關元件為“0FF”狀態）該照明光 束’俾產生一影像光束朝向一工作片4。光柵裝置33係設 置於數位控制光開關陣列32與工作片4之間，且包含複數 個光柵窗330a(grating windows)，以使至少部分之該影像光 束通過。投影透鏡組34係設置於光栅裝置33與工作片4 201102760 之間，用以將數位控制光開蘭陣列32與光柵裝置33所產 生的〜像光束聚焦並將該影像光束之影像圖案成像於工作 片4之表面。控制裝置35連接於數位控制光開闕陣列32， 以依據所需影像圖案控制複數個數位控制光開關元件320 分別切換於導5丨或不導引該照明光束，以產生f彡像光束朝 向工作片4,俾將該影像圖案成像於工作片4之表面以進 行作片4之無光罩微影製程。於本實施例中，工作片4201102760 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a lithography system and method, and more particularly to a reticle-free lithography system and method. [Prior Art] In the process of microelectronic components, the breakthrough of lithography technology plays a very important and crucial role in order to enable components to develop toward high integration, high functionality, and finer line width. The conventional lithography process uses a lithography system and a reticle, and applies the principle of optical imaging to transfer a pattern on the reticle to a target area of a work piece, wherein the work piece can include a photosensitive material coated thereon. The semiconductor substrate, in addition, the reticle may be of flat and transparent quartz, and its surface may be covered with a chrome film to provide a pattern to be transferred to the work piece. Please refer to the first figure, which is a schematic diagram showing the structure of transferring a reticle pattern to a work piece by a conventional lithography system. As shown in the first figure, in order to completely and accurately copy the design ® good line pattern onto the work piece, the design pattern is first made into the reticle 10. Then, the light source 11 of the lithography system 1 emits light and condenses and guides light to the reticle 10 through the lens 12, at which time only a portion passing through the transparent region of the reticle 10 can be imaged on the surface of the work piece 2. The work piece 2 may include a substrate 20 whose surface is previously subjected to a cleaning process, and then a pad oxide layer 21 and a photosensitive material 22 coated with a film-like function, or a photoresist layer, are formed. Light passing through the lens 12 and the reticle 10 reacts with the photosensitive material 22, which is generally referred to as exposure. 201102760 The exposed work piece 2 needs to be further developed to chemically process the exposed and unexposed photosensitive material 22' on the work piece 2 to transfer the pattern on the photomask 10 to the work piece 2 completely. 'And then continue with other processes. Typically, different photographic materials may be selected as needed to remove or retain selected patterns in different lithography processes. Please refer to the second figure A and B' for a schematic diagram showing the flow structure of the lithography process using a positive photoresist for the photosensitive material. As shown in the second diagrams A and B, the photosensitive material 22 of the work piece 2 is blocked by the photomask 10 and the unexposed portion can be retained on the work piece 2, and the exposed portion is finally removed. Please refer to the third figure A and B, which are schematic diagrams showing the flow structure of a lithography process using a negative photoresist for a photosensitive material. As shown in the third panels A and B, the photosensitive material 22 of the work sheet 2 is blocked by the mask 10 and the unexposed portion is finally removed. The exposed portion remains on the work sheet 2. However, the production, use, and management of reticle often impose burdens on the industry and create many problems. For example, in order to meet the needs of different products, it is often necessary to pre-produce masks with different transfer patterns. However, the cost of the mask is relatively high, usually about one tenth to five cents of the cost of each semiconductor component. One's thus the manufacturing cost of the component cannot be reduced. In addition, the production and inspection of the mask is time-consuming, and if there is a problem after the inspection, the mask must be re-made, which is likely to delay the shipping schedule. In addition, as the line width of the integrated circuit layout becomes more and more fine, the lithography technology needs to constantly increase the exposure wavelength, reduce the resolution, and thus will face the bottle of optical imaging technology. Optical Proximity Correction (opC) 修正 疋 疋 2011 2011 2011 晶片 晶片 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 Then improve some. The optical proximity correction technique takes into account the effect of the diffraction. In order to compensate for the distortion of the pattern after the exposure, the pattern of the reticle is modified to make the generated diffracted light superimposed to obtain a pattern and line width which meet the actual requirements. For example, if a rectangular pattern is to be formed on a wafer, the corresponding pattern on the mask is no longer the same rectangle, and some changes must be made at the corners to eliminate the phenomenon of corner passivation caused by diffraction. Although optical proximity correction (OPC) can reduce the costly mask re-production process and time-to-market delays to a lesser extent, there is still a need to increase the cost and time to perform optical proximity correction procedures. In addition, the mask pattern and design are not easy to keep secret and control, which is easy to cause confidential data to flow out, which is not conducive to management, and the preservation and maintenance of a large number of masks will also cause huge management and maintenance expenses. In addition, when the mask pattern is problematic and cannot be detected immediately, it may also be caused by a defective product after being applied to the process, and it is necessary to reproduce it, causing serious loss and delay in shipment. On the other hand, when a photomask is used in a lithography process, the alignment is relatively time-consuming, which is disadvantageous for mass production. Therefore, it is necessary to develop a reticle lithography system and method to solve the problems faced by conventional lithography systems and methods. SUMMARY OF THE INVENTION The purpose of the present invention is to provide a reticle lithography system, which can directly transfer a desired line or structure to a work piece without using a reticle during the lithography process, so that the product can be reduced not only Manufacturing cost, reducing process time and mass production, and avoiding the waste of time, delay, and time delay in the production, inspection, remanufacturing, use and management of reticle, 201102760 product re-production, mask pattern confidentiality and control is not easy And other issues. Another object of the present invention is to provide a shirtless lithography system and method that eliminates the need for a reticle and eliminates the need for an optical proximity correction procedure when performing the 彡 process, which saves cost and process time. In order to achieve the above purpose, the present invention provides a non-mask lithography system, comprising: a light source, which is provided to provide an illumination beam; a digitally controlled optical switch array, which sets a transmission path of the light beam and includes a plurality of digital control lights The switching device 'the plurality of digital control optical switching components are controlled to guide or not guide the illumination beam, and the image beam is directed toward a working piece; the grating is disposed, and is disposed in the digital control optical switch array. a gate of the film, and comprising a plurality of grating windows, so that at least part of the image beam passes; the projection: is disposed between the grating device and the working piece, and is used for focusing the image beam generated by the digital control m (four) column and the grating device And imaging the image pattern of the image beam on the H and the control device, and connecting to the digital reading column to control the plurality of digital control first switching elements according to an image pattern respectively (10) to guide or not to conduct (four) illumination 総, so that the digital control light The open_column produces the shadow bundle imaged onto the work pattern toward the image pattern. The film will provide a maskless lithography method as described in the description, including: , system: shadow system ϊ 'The maskless lithography system includes a light source, a digital control first switch array, a grating arrangement, a projection lens a group and a control device, wherein the digital control light-on column comprises a plurality of digits; a plurality of raster windows are included; the light is provided; the heart is provided; and the image pattern is opened according to one of the control devices Or (4) the material beam, so that the == 201102760 bit control optical switch array generates an image beam, and the image beam passes through a plurality of grating windows of the grating device and the projection lens group to image the image pattern of the image beam onto a working piece. [Embodiment] Some exemplary embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention is capable of various changes in the various aspects of the present invention without departing from the scope of the present invention, and the description and illustration thereof are used in the nature of the description and are not intended to limit the present invention. Referring to the fourth figure, it is a schematic diagram showing the architecture of the reticle lithography system of the preferred embodiment of the present invention. As shown in the fourth figure, the maskless microlithography system of the present invention mainly comprises a light source 31, a digitally controlled optical switch array 32, a grating device 33, a projection lens group 34, and a control device 35. The light source 31 is configured to provide an illumination beam. The digitally controlled optical switch array 32 is disposed on the transmission path φ diameter ' of the illumination beam and includes a plurality of digitally controlled optical switching elements 320, such as a reflective digital micromirror device (DMD) or a tooth-permeable type. Liquid crystal light valve devices, the plurality of digitally controlled optical switching elements 32 are respectively controllably controllable (ie, the digital control optical switching elements are "ON," state) or not guided ( That is, the digital control optical switching element is in the "OFF" state. The illumination beam '俾 generates an image beam toward a working slice 4. The grating device 33 is disposed between the digitally controlled optical switch array 32 and the working piece 4, and includes a plurality a grating window 330a (grating windows) for passing at least part of the image beam. The projection lens group 34 is disposed between the grating device 33 and the working piece 4 201102760 for controlling the digital light-emitting array 32 and the grating device. The image beam generated by 33 is focused and the image pattern of the image beam is imaged on the surface of the work piece 4. The control device 35 is connected to the digital control. The array 32 is opened to control the plurality of digitally controlled optical switching elements 320 to switch to or not to guide the illumination beam according to the desired image pattern to generate the image beam toward the working sheet 4, and to image the image The image is formed on the surface of the work piece 4 to perform the maskless lithography process of the film 4. In this embodiment, the work piece 4
包括基板41以及光阻層42，其中該光阻層42形成於基板 41上，且影像圖案係成像於工作片4之光阻層42。於一些 實施例中，工作片4更包括—塾氧化層43，形成於基板^ 與光阻層42之間。於本實施例中，卫作片4可為半導體基 板或電路載板，且不以此為限。 土 於本實施例中，光源31可為雷射光源或發光二極體 源’且不以此為限。當光源31為雷射光源時 可提供脈衝之照料束。於本實施例中，光源3連接於 控制裝置35 ’該控制裝置35可控制光源31持 時間提供照明％束至數位控制光開關㈣32 :又叹义 31彳τ止提供照明光束至數位控制光開關陣列3^。工】光肩 於-些實施例中，本案之無光罩微影系統 作業平台36,該作業平台36係連接於控制 匕括〜 制裝置35可依據所需的影像圖案控制作業^台5 該控 段設定時間或於二維方向移動，俾利微影製6靜止〜 一些實施例中’本案之無料微料統3更 j行。於 37，设置於光源31與數位控制光開關陣列透鏡矣且 接收照明光束並將照明光束導向數位㈣㈣用以 夕’J 3 2 〇 201102760 其中透鏡組37可包括例如集光透鏡以及絲鏡，且不以 此為限。於-些實施例中，投影透鏡組％係連接於控制農 置35 ’该控制裝置35可依據所需的影像圖案及欲形成於 工作片4上影像圖案之尺寸控制投影透鏡組乂之内部透 鏡’以將影像光束成像於工作片4之影像圖案縮放特定比 例。其+’投影透鏡级34可包含集光透鏡與慮光透鏡，且 不以此為限。於-些實施例中’本案之無光罩微影系統3 更可使用多組的數位控制光開關陣列32。 於本實施例中，數位控制光開關陣列32之複數個數位 控制光開關元件320以數位微型反射鏡元件（DMD)為較 佳。第五圖係顯示第四圖之數位控制光開關陣列之複數個 數位控制光開關元件為複數個數位微型反射鏡元件之一示 範性結構示思圖。如苐五圖所示，數位控制光開關陣列32 可提供例如但不限於1280* 1024的數位微型反射鏡元件 320a。每一個數位微型反射鏡元件320a係可因應控制裝置 35之控制而切換於導引該照明光束朝向光栅裝置33(亦即 數位微型反射鏡元件320a為“ON”狀態），或者是切換於 將照明光束導離光栅裝置33(亦即數位微型反射鏡元件 320a為“OFF”狀態）。藉此，控制裝置35便可依據所需 的影像圖案控制複數個數位微型反射鏡元件320a之作 動，以將光源31所提供之照明光束轉換產生一影像光束並 朝向光栅裝置33。由於數位微型反射鏡元件32〇a之結構 與原理係與傳統技術相似，在此皆可併入參考。 第六圖A係為第四圖之光柵裝置之示範性結構示意 圖。如第四圖及第六圖A所示，光拇裝置33係設置於數 201102760 位控制光開關陣列32與工作片4之間，且包含複數個光柵 窗330a(grating windows)，以使來自於數位控制光開關陣列 32之影像光束之至少部分可以通過複數個光栅窗33〇a，藉 此可增加成像於工作片4之影像圖案之解析度，例如兩倍 以上。此外，光柵裝置33之複數個光柵窗330a亦可使成 像於工作片4之影像圖案不失真，且亦可簡化整體之光學 設計。第六圖A之光柵裝置33係包含複數個區域，例如 φ 第一區域33卜第二區域332、第三區域333、第四區域334。 其中，第一區域331之複數個光栅窗330a係為長方形且其 長邊平行於Y轴’短邊平形於X軸。複數個光柵窗33〇a 間係由複數個遮蔽部330b相間隔地平行排列，每一光栅窗 330a之形狀與尺寸係相同’且每一光柵窗33〇a之形狀與尺 寸亦與遮蔽部330b相同。第二區域332之複數個光柵窗 330a係為長方形且其長邊平行於γ軸’短邊平形於X軸。 複數個光柵窗330a間係由複數個遮蔽部330b相間隔地平 參 行排列，每一光栅窗330a之形狀與尺寸係相同，且每一光 柵窗330a之形狀與尺寸亦與遮蔽部33〇b相同。此外，第 一區域331之複數個光柵窗330a係相對應於第二區域332 之複數個分隔區域330b之位置。 第三區域333之複數個光柵窗330a係為長方形且其長 邊平行於X軸，短邊平形於γ軸。複數個光柵窗33〇a間 係由複數個遮蔽部330b相間隔地平行排列，每一光柵窗 330a之形狀與尺寸係相同，且每一光柵窗33〇a之形狀與尺 寸亦與遮蔽部330b相同。第四區域334之複數個光柵窗 330a係為長方形且其長邊平行於又軸，短邊平形於γ軸。 11 201102760 複數個光柵窗330a間係由複數個遮蔽部330b相間隔地平 行排列，每一光栅窗330a之形狀與尺寸係相同，且每一光 柵窗330a之形狀與尺寸亦與遮蔽部330b相同。此外，第 三區域333之複數個光柵窗330a係相對應於第四區域334 之複數個分隔區域330b之位置。 第六圖B係為第四圖之光柵裝置之另一示範性結構示 意圖。如第四圖及第六圖B所示，光栅裝置33係包含複數 個區域，例如第一區域335、第二區域336、第三區域337、 第四區域338。其中，每一區域335、336、337、338包含 複數個光栅窗330a以及複數個遮蔽部330b。複數個遮蔽 部330b係由複數個光柵窗330a相分隔，且Is車列式地排列 於每一區域335、336、337、338中。應注意的是，光柵裝 置33之複數個光栅窗330a的形狀、尺寸以及排列方式係 不限於第六圖A及B所示，任何適當的形狀、尺寸以及排 列方式在此皆可併入參考。於一些實施例中，光柵裝置33 可由多組相疊合構成，且不此此為限。 於一些實施例中，如第七圖所示，控制裝置35更包括 圖案挺供褒置350，δ亥圖案提供裝置350可產生所需影像 圖案之數位資料以及儲存多種影像圖案之數位資料。圖案 提供裝置350可以是電腦輔助設計系統，該電腦輔助設 系統可包含電腦輔助設計軟體，藉此可以依據需求設計: 修改或儲存任何所需的影像圖案（例如以電腦輔助設計_ 案(CAD file)之格式進行修改及儲存），此外1電腦辅: 設計系統亦可用於前所需之影像㈣之尺寸以及修改影 像圖案的失真°於-些實施例中，圖案提供裝置35〇可透 12 201102760 過使用介面之密碼或驗証設定，以提供資料保密之功能。 依據本案之構想，本案提供一種無光罩微影方法，勺 3步驟·首先’提供無光罩微影系統3，該無光罩微影系 統3包含光源31、數位控制光開關陣列32、光柵裴置^3、 投影透鏡組34以及控制裝置35，其中該數位控制光、 陣列32包含複數個數位控制光開關元件32〇，該光柵裝置 33包含複數個光栅窗330a。由於無光罩微影系統3之^元 件或裴置的架構、連接關係與功能如前所述，於此不再= 述。接著’以光源3!提供照明光源。之後，依據控制裝置 35之一影像圖案控制複數個數位控制光開關元件32〇分 切換於導引或不導引該照明光束，使該數位控制光開:陣 列32產生-影像光束，並使該影像光束經由光拇裝置％ 2數個光柵窗33〇a以及投影透鏡組34以將影像光束之 衫像圖案成像於一工作片4。 =上所述’本案提供—種無鮮微影“，於進行微 办製知時無需使用光罩即可將所兩 心一 早P j肝所而線路或結構圖案直接轉 低制Μ 4上’如此不只可以降低產品的製造成本、 =衣程時間及利於量產，且可以避免光罩製作、檢驗、The substrate 41 and the photoresist layer 42 are formed, wherein the photoresist layer 42 is formed on the substrate 41, and the image pattern is formed on the photoresist layer 42 of the working sheet 4. In some embodiments, the working piece 4 further includes a germanium oxide layer 43 formed between the substrate and the photoresist layer 42. In this embodiment, the blade 4 can be a semiconductor substrate or a circuit carrier, and is not limited thereto. In this embodiment, the light source 31 may be a laser light source or a light emitting diode source' and is not limited thereto. A pulsed care beam is provided when the source 31 is a laser source. In the present embodiment, the light source 3 is connected to the control device 35. The control device 35 can control the light source 31 to provide illumination for a period of time to provide a digital control beam to the digital control optical switch (4) 32: the singer 31 彳τ provides the illumination beam to the digital control optical switch Array 3^. In the embodiment, the maskless lithography system working platform 36 of the present invention is connected to the control unit 35 to control the operation unit 5 according to the desired image pattern. The control section sets the time or moves in the two-dimensional direction, and the lithography system 6 is still~ In some embodiments, the material of the present invention is more than three lines. 37, disposed in the light source 31 and the digitally controlled optical switch array lens 矣 and receiving the illumination beam and directing the illumination beam to the digital position (4) (4) for the eve 'J 3 2 〇 201102760, wherein the lens group 37 may include, for example, a collecting lens and a wire mirror, and Not limited to this. In some embodiments, the projection lens group % is connected to the control farm 35 '. The control device 35 can control the inner lens of the projection lens group according to the desired image pattern and the size of the image pattern to be formed on the work piece 4 'Scale a specific scale by imaging the image beam onto the image pattern of the work piece 4. The +' projection lens stage 34 may include a collecting lens and a light-receiving lens, and is not limited thereto. In some embodiments, the maskless lithography system 3 of the present invention can use a plurality of sets of digitally controlled optical switch arrays 32. In the present embodiment, the plurality of digital control optical switching elements 320 of the digital control optical switch array 32 are preferably digital micro mirror elements (DMD). The fifth figure shows an exemplary structural diagram of a plurality of digitally controlled optical switching elements of the digital control optical switch array of the fourth figure as a plurality of digital micro mirror elements. As shown in the fifth diagram, the digitally controlled optical switch array 32 can provide a digital micro mirror element 320a such as, but not limited to, 1280*1024. Each of the digital micro mirror elements 320a can be switched to direct the illumination beam toward the grating device 33 (ie, the digital micro mirror element 320a is "ON"), or switch to illumination, in response to control by the control device 35. The beam is directed away from the grating device 33 (i.e., the digital micro mirror element 320a is in an "OFF" state). Thereby, the control device 35 can control the operation of the plurality of digital micro mirror elements 320a according to the desired image pattern to convert the illumination beam provided by the light source 31 to generate an image beam and to face the grating device 33. Since the structure and principle of the digital micromirror device 32A are similar to those of the conventional art, they can be incorporated herein by reference. Fig. 6 is a schematic structural view of the grating device of the fourth figure. As shown in the fourth figure and the sixth figure A, the optical thumb device 33 is disposed between the number of 201102760 bits to control the optical switch array 32 and the working piece 4, and includes a plurality of grating windows 330a (grating windows) so as to come from At least a portion of the image beam of the digitally controlled optical switch array 32 can pass through a plurality of raster windows 33a, thereby increasing the resolution of the image pattern imaged on the worksheet 4, for example, more than twice. In addition, the plurality of raster windows 330a of the grating device 33 can also make the image pattern formed on the working sheet 4 undistorted, and can also simplify the overall optical design. The grating device 33 of the sixth diagram A includes a plurality of regions, for example, a first region 33, a second region 332, a third region 333, and a fourth region 334. The plurality of raster windows 330a of the first region 331 are rectangular and have long sides parallel to the Y-axis. The short sides are flat on the X-axis. The plurality of grating windows 33〇a are arranged in parallel by a plurality of shielding portions 330b, and each of the grating windows 330a has the same shape and size. The shape and size of each of the grating windows 33〇a are also different from the shielding portion 330b. the same. The plurality of raster windows 330a of the second region 332 are rectangular and have long sides parallel to the gamma axis. The short sides are flat on the X axis. The plurality of grating windows 330a are arranged in a horizontal arrangement by a plurality of shielding portions 330b. Each of the grating windows 330a has the same shape and size, and each of the grating windows 330a has the same shape and size as the shielding portion 33B. . Further, the plurality of raster windows 330a of the first region 331 correspond to the positions of the plurality of partition regions 330b of the second region 332. The plurality of raster windows 330a of the third region 333 are rectangular and have long sides parallel to the X axis and short sides flat to the γ axis. The plurality of grating windows 33a are arranged in parallel by a plurality of shielding portions 330b. Each of the grating windows 330a has the same shape and size, and the shape and size of each of the grating windows 33a is also different from the shielding portion 330b. the same. The plurality of raster windows 330a of the fourth region 334 are rectangular and have long sides parallel to the axis and short sides flat on the gamma axis. 11 201102760 A plurality of grating windows 330a are arranged in parallel by a plurality of shielding portions 330b. Each of the grating windows 330a has the same shape and size, and each of the grating windows 330a has the same shape and size as the shielding portion 330b. Further, the plurality of raster windows 330a of the third region 333 correspond to the positions of the plurality of partition regions 330b of the fourth region 334. Fig. 6B is another exemplary structural schematic of the grating device of the fourth figure. As shown in the fourth and sixth panels B, the grating device 33 includes a plurality of regions, such as a first region 335, a second region 336, a third region 337, and a fourth region 338. Each of the regions 335, 336, 337, 338 includes a plurality of raster windows 330a and a plurality of masking portions 330b. The plurality of mask portions 330b are separated by a plurality of raster windows 330a, and Is trains are arranged in each of the regions 335, 336, 337, 338. It should be noted that the shape, size, and arrangement of the plurality of raster windows 330a of the grating device 33 are not limited to those shown in Figures 6 and B, and any suitable shape, size, and arrangement may be incorporated herein by reference. In some embodiments, the grating device 33 may be composed of a plurality of sets of stacked layers, and is not limited thereto. In some embodiments, as shown in the seventh figure, the control device 35 further includes a pattern supply device 350, which can generate digital data of a desired image pattern and digital data for storing a plurality of image patterns. The pattern providing device 350 may be a computer-aided design system, which may include a computer-aided design software, which can be designed according to requirements: modify or store any desired image pattern (for example, computer-aided design (CAD file) The format is modified and stored), in addition to the 1 computer auxiliary: the design system can also be used for the size of the desired image (4) and the distortion of the modified image pattern. In some embodiments, the pattern providing device 35 can pass through 12 201102760 Use the password or verification settings of the interface to provide confidentiality of the data. According to the concept of the present invention, the present invention provides a maskless lithography method, the spoon 3 steps firstly provide a maskless lithography system 3, the maskless lithography system 3 comprises a light source 31, a digitally controlled optical switch array 32, a grating The device 3, the projection lens group 34, and the control device 35, wherein the digital control light, the array 32 comprises a plurality of digitally controlled optical switching elements 32A, the grating device 33 comprising a plurality of raster windows 330a. Since the structure, connection relationship and function of the components or devices of the reticle lithography system 3 are as described above, they are not described here. Then, the illumination source is provided by the light source 3!. Then, according to one of the image patterns of the control device 35, the plurality of digital control optical switching elements 32 are controlled to switch between guiding or not guiding the illumination beam, so that the digital control light is turned on: the array 32 generates an image beam, and the The image beam is imaged through a plurality of raster windows 33A and a projection lens group 34 to image the image of the image of the image beam onto a work piece 4. = The above-mentioned 'provided in this case - a kind of no-fresh lithography", you can use the mask to carry out the two hearts and the early P j liver and the line or structure pattern is directly reduced to low on the micro-working system. This can not only reduce the manufacturing cost of the product, = clothing time and mass production, but also avoid mask production, inspection,
衣、使用與管理方面所可能產生 A 產品重製、朵罢闰安& — A ^ 本浪費、時間延石 之-光;微ί 管不易等問題。此外，本 罩方法，於進行微影製程時無需使用」Clothing, use and management may result in A product re-production, 闰 闰 & & A A A A A 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 In addition, the mask method does not need to be used for lithography processes."
以及製程時間。 秩序，如此可以卽省成J 技藝==上;之實施例詳細敘述…熟悉： 施匠思而為諸般修飾，然皆不脫如附申請4 201102760 利範圍所欲保護者。 【圖式簡單說明】 第一圖：其係顯示以傳統微影系統將光罩圖案轉移於工作 片之架構不意圖。 第二圖A與B :其係顯示使用正光阻劑為感光材料進行微 影製程之流程結構示意圖。 第三圖A與B :其係顯示使用負光阻劑為感光材料進行微 影製程之流程結構示意圖。 第四圖：其係顯示本案較佳實施例之無光罩微影系統架構 示意圖。 第五圖：係顯示第四圖之數位控制光開關陣列之複數個數 位控制光開關元件為複數個數位微型反射鏡元件之一示範 性結構示意圖。 第六圖A :係為第四圖之光栅裝置之示範性結構示意圖。 _ 第六圖B:係為第四圖之光柵裝置之另一示範性結構示意 圖。 第七圖：其係顯示本案另一較佳實施例之無光罩微影系統 架構不意圖。 14 201102760And process time. Order, so can save the J skills == on; the detailed description of the example... Familiar: The craftsmanship and the various modifications, but are not as attached to the application of 4 201102760. [Simple description of the diagram] The first picture: it shows the architecture of transferring the mask pattern to the work piece by the traditional lithography system. Second Figures A and B: A schematic diagram showing the flow structure of a photographic process using a positive photoresist for a photosensitive material. Third Figures A and B: A schematic diagram showing the flow structure of a photographic process using a negative photoresist for a photosensitive material. Fourth: It is a schematic diagram showing the architecture of the reticle lithography system of the preferred embodiment of the present invention. Fig. 5 is a schematic diagram showing an exemplary structure of a plurality of digital micro-mirror elements for controlling a plurality of digital control optical switching elements of the digital control optical switch array of the fourth figure. Fig. 6A is a schematic structural diagram of a grating device of the fourth figure. _ Figure 6B is another exemplary structural diagram of the grating device of the fourth figure. Fig. 7 is a schematic view showing the structure of a matte lithography system according to another preferred embodiment of the present invention. 14 201102760
【主要圖示符號說明】 微影系統：1 光源：11 工作片：2 墊氧化層：21 無光罩微影系統：3 數位控制光開關陣列：32 投影透鏡組：34 作業平台：36 數位控制光開關元件：320 光栅窗：330a 第一區域：331、335 第三區域：333、337 圖案提供裝置：350 基板：41 墊氧化層：43 光罩：10 透鏡：12 半導體基板：20 感光材料：22 光源：31 光柵裝置：33 控制裝置：35 透鏡組：37 數位微型反射鏡元件： 遮蔽部：330b 第二區域：332、336 第四區域：334、338 工作片：4 光阻層：42 320a 15[Main illustration symbol description] lithography system: 1 light source: 11 working piece: 2 pad oxide layer: 21 maskless lithography system: 3 digital control optical switch array: 32 projection lens group: 34 working platform: 36 digital control Optical switching element: 320 Raster window: 330a First area: 331, 335 Third area: 333, 337 Pattern providing device: 350 Substrate: 41 Pad oxide layer: 43 Photomask: 10 Lens: 12 Semiconductor substrate: 20 Photosensitive material: 22 Light source: 31 Grating device: 33 Control device: 35 Lens group: 37 Digital micro mirror element: Masking part: 330b Second area: 332, 336 Fourth area: 334, 338 Working piece: 4 Photoresist layer: 42 320a 15