TWI722827B - Pixel array substrate - Google Patents
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本發明是有關於一種電路基板,且特別是有關於一種兼具顯示、觸控及光學感測功能的畫素陣列基板。The present invention relates to a circuit substrate, and more particularly to a pixel array substrate with display, touch and optical sensing functions.
現今指紋辨識廣泛運用於各種電子產品上,又以可攜式行動裝置例如是手機(Smart phone)、平板電腦(Tablet computer)最為常見。同時,目前電子產品的顯示螢幕為了追求更佳的視覺體驗,逐步朝向高屏佔比與窄邊框的發展方向,使指紋辨識模組需改而設置在顯示螢幕下方,因此發展出屏下指紋辨識(Fingerprint on Display;FOD)的技術。Nowadays, fingerprint recognition is widely used in various electronic products, and portable mobile devices such as smart phones and tablet computers are the most common. At the same time, in order to pursue a better visual experience, the display screens of current electronic products are gradually moving towards the development direction of high screen ratio and narrow bezel. The fingerprint recognition module needs to be changed and placed under the display screen. Therefore, under-screen fingerprint recognition has been developed. (Fingerprint on Display; FOD) technology.
為了簡化這類具有屏下指紋辨識功能的觸控顯示面板的製程,一種將指紋辨識模組與觸控感測模組整合至畫素陣列基板的觸控顯示技術被提出,其中為了將顯示畫素的開口率最大化,用以傳輸指紋辨識訊號與觸控感測訊號的電路走線必須與顯示訊號線重疊。如此,勢必要增加額外的膜層方能為電路配置提供足夠的佈局空間,造成生產成本的提高。In order to simplify the manufacturing process of such a touch display panel with under-screen fingerprint recognition, a touch display technology that integrates a fingerprint recognition module and a touch sensing module on a pixel array substrate is proposed. The aperture ratio of the pixel is maximized, and the circuit traces used to transmit fingerprint recognition signals and touch sensing signals must overlap with the display signal lines. In this way, it is necessary to add additional film layers to provide sufficient layout space for the circuit configuration, resulting in an increase in production costs.
本發明提供一種畫素陣列基板,其用於電路配置的可佈局空間較大。The present invention provides a pixel array substrate, which has a relatively large layout space for circuit configuration.
本發明提供一種可簡化製程工序的畫素陣列基板。The invention provides a pixel array substrate which can simplify the manufacturing process.
本發明的畫素陣列基板,包括基板、多條第一訊號線、多個畫素結構、多條第二訊號線、多個光感測單元、多條第三訊號線以及多個觸控單元。多條第一訊號線沿著第一方向排列於基板上。多個畫素結構設置於這些第一訊號線之間。多條第二訊號線沿著第一方向排列於基板上。多個光感測單元設置於這些第二訊號線之間,且電性連接這些第二訊號線。這些光感測單元的任兩相鄰者以這些第二訊號線的其中一者為中心對稱設置。多條第三訊號線與這些第二訊號線交替排列於基板上。多個觸控單元電性連接這些第三訊號線。The pixel array substrate of the present invention includes a substrate, multiple first signal lines, multiple pixel structures, multiple second signal lines, multiple light sensing units, multiple third signal lines, and multiple touch units . A plurality of first signal lines are arranged on the substrate along the first direction. A plurality of pixel structures are arranged between the first signal lines. A plurality of second signal lines are arranged on the substrate along the first direction. A plurality of light sensing units are arranged between the second signal lines and are electrically connected to the second signal lines. Any two adjacent ones of the light sensing units are symmetrically arranged with one of the second signal lines as the center. A plurality of third signal lines and these second signal lines are alternately arranged on the substrate. The touch control units are electrically connected to the third signal lines.
本發明的畫素陣列基板,包括基板、多條第一訊號線、多個畫素結構、多條第二訊號線、多個光感測單元、多條第三訊號線以及多個觸控單元。多條第一訊號線沿著第一方向排列於基板上。多個畫素結構設置於這些第一訊號線之間。多條第二訊號線沿著第一方向排列於基板上。多個光感測單元設置於這些第二訊號線之間,且這些光感測單元的任兩相鄰者電性連接這些第二訊號線的其中一者。多條第三訊號線與這些第二訊號線交替排列於基板上。多個觸控單元電性連接這些第三訊號線。The pixel array substrate of the present invention includes a substrate, multiple first signal lines, multiple pixel structures, multiple second signal lines, multiple light sensing units, multiple third signal lines, and multiple touch units . A plurality of first signal lines are arranged on the substrate along the first direction. A plurality of pixel structures are arranged between the first signal lines. A plurality of second signal lines are arranged on the substrate along the first direction. A plurality of light sensing units are arranged between the second signal lines, and any two adjacent ones of the light sensing units are electrically connected to one of the second signal lines. A plurality of third signal lines and these second signal lines are alternately arranged on the substrate. The touch control units are electrically connected to the third signal lines.
基於上述,在本發明的一實施例的畫素陣列基板中,用於顯示的多個畫素結構與多條第一訊號線沿著一方向交替排列於基板上。用於光學感測的光感測單元與多條第二訊號線也沿著所述方向交替排列於基板上。透過任兩相鄰的光感測單元以這些第二訊號線的其中一者為中心對稱設置並與其電性連接,可增加電路配置的可佈局空間,有助於簡化畫素陣列基板的製程工序並降低其生產成本。Based on the foregoing, in the pixel array substrate of an embodiment of the present invention, a plurality of pixel structures for display and a plurality of first signal lines are alternately arranged on the substrate along a direction. The light sensing unit for optical sensing and a plurality of second signal lines are also alternately arranged on the substrate along the direction. By symmetrically arranging and electrically connecting any two adjacent light sensing units with one of the second signal lines as the center, the layout space of the circuit configuration can be increased, and the manufacturing process of the pixel array substrate can be simplified. And reduce its production cost.
本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或例如±30%、±20%、±15%、±10%、±5%內。再者,本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "approximately", "approximately", "essentially", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account all The measurement in question and the specific number of errors associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, "about", "approximately", "essentially", or "substantially" used in this article can be based on measurement properties, cutting properties, or other properties to select a more acceptable deviation range or standard deviation. Not one standard deviation applies to all properties.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" can mean that there are other components between the two components.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其它元件的「下」側的元件將被定向在其它元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上面」或「下面」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" can be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper," depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" can include an orientation of above and below.
現將詳細地參考本發明的示範性實施方式,示範性實施方式的實例說明於所附圖式中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.
圖1是本發明的一實施例的畫素陣列基板的俯視示意圖。圖2是圖1的畫素陣列基板的局部區域的放大示意圖。圖3是圖2的畫素陣列基板的電路簡圖。圖4是圖2的畫素陣列基板的剖視示意圖。特別說明的是,為清楚呈現起見,圖1省略了圖2的掃描線GL、第一訊號線SL1、第二訊號線SL2、第四訊號線SL4、第五訊號線SL5以及第六訊號線SL6的繪示;圖2省略了圖4的緩衝層120、閘絕緣層130、層間絕緣層140、第一平坦層150、絕緣層160、第二平坦層170、絕緣層180、絕緣層190、觸控電極TE、第一主動元件T1、感測元件210、連接電極CE1、連接電極CE2以及連接電極CE3的繪示。FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention. FIG. 2 is an enlarged schematic diagram of a partial area of the pixel array substrate of FIG. 1. FIG. 3 is a schematic circuit diagram of the pixel array substrate of FIG. 2. 4 is a schematic cross-sectional view of the pixel array substrate of FIG. 2. Specifically, for the sake of clarity, FIG. 1 omits the scan line GL, the first signal line SL1, the second signal line SL2, the fourth signal line SL4, the fifth signal line SL5, and the sixth signal line of FIG. 2 for clarity. Illustration of SL6; Figure 2 omits the
請參照圖1、圖2及圖3,畫素陣列基板10包括基板110、多條掃描線GL、多條第一訊號線SL1(例如是資料線)以及多個畫素結構PX。舉例來說,這些掃描線GL沿著方向Y排列於基板110上且在方向X上延伸。這些第一訊號線SL1沿著方向X排列於基板110上且在方向Y上延伸。這些畫素結構PX分別設置於這些第一訊號線SL1之間。在本實施例中,方向X可垂直於方向Y,但不以此為限。更具體地說,這些畫素結構PX陣列排列於基板110上,且分別與對應的一條掃描線GL與對應的一條第一訊號線SL1電性連接。Referring to FIGS. 1, 2 and 3, the
特別一提的是,本實施例的畫素陣列基板10適用於一種兼具屏下指紋辨識、觸控感測以及顯示功能的全屏式(full-screen)顯示面板,且此類全屏式顯示面板適於搭載在可攜式電子裝置(例如智慧型手機、平板電腦或智慧手表)上。全屏式顯示面板例如是非自發光型顯示面板。舉例來說,全屏式顯示面板可包括畫素陣列基板10、顯示介質層以及對向基板,其中顯示介質層夾設於畫素陣列基板10與對向基板之間,且包括多個液晶分子。也就是說,此處的全屏式顯示面板為液晶顯示面板。應可理解的是,此類全屏式顯示面板需搭配背光模組方能達到顯示畫面的效果。然而,本發明不限於此,根據其他實施例,全屏式顯示面板也可以是自發光型顯示面板。亦即,顯示介質層可包含多個發光二極體元件。發光二極體元件例如是有機發光二極體(organic light-emitting diode,OLED)、微型發光二極體(micro light-emitting diode,Micro LED)、次毫米發光二極體(mini light-emitting diode,Mini LED)。In particular, the
進一步而言,畫素陣列基板10更包括多條第二訊號線SL2與多個光感測單元LSU。這些第二訊號線SL2沿著方向X排列於基板110上且在方向Y上延伸。這些光感測單元LSU分別設置於這些第二訊號線SL2之間,且電性連接這些第二訊號線SL2。在本實施例中,這些第二訊號線SL2包括多條第二訊號線SL2a與多條第二訊號線SL2b,且第二訊號線SL2a與第二訊號線SL2b交替排列於基板110上。更具體地說,每一個光感測單元LSU與鄰設於其相對兩側的兩個光感測單元LSU之間分別設有一條第二訊號線SL2a與一條第二訊號線SL2b。Furthermore, the
舉例來說,多個光感測單元LSU包括在方向X上排列且相鄰的第一光感測單元LSU1、第二光感測單元LSU2與第三光感測單元LSU3。第一光感測單元LSU1與第二光感測單元LSU2之間設有一條第二訊號線SL2b,第二光感測單元LSU2與第三光感測單元LSU3之間設有一條第二訊號線SL2a。在本實施例中,光感測單元LSU包括感測元件210、第一主動元件T1以及第二主動元件T2,但不以此為限。第一主動元件T1電性連接於感測元件210與第二訊號線SL2b之間,且第二主動元件T2電性連接於感測元件210與第二訊號線SL2a之間。在本實施例中,第二訊號線SL2a例如是高電位側電源線(SVDD),第二訊號線SL2b例如是低電位側電源線(SVSS),但不以此為限。For example, the plurality of light sensing units LSU includes a first light sensing unit LSU1, a second light sensing unit LSU2, and a third light sensing unit LSU3 that are arranged in the direction X and are adjacent to each other. A second signal line SL2b is provided between the first light sensing unit LSU1 and the second light sensing unit LSU2, and a second signal line SL2b is provided between the second light sensing unit LSU2 and the third light sensing unit LSU3 SL2a. In this embodiment, the light sensing unit LSU includes a
值得注意的是,這些光感測單元LSU的任兩相鄰者是以這些第二訊號線SL2的其中一者為中心對稱設置。舉例來說,第一光感測單元LSU1與第二光感測單元LSU2是以第二訊號線SL2b為中心對稱設置。更具體地說,第一光感測單元LSU1與第二光感測單元LSU2各自的第一主動元件T1、感測元件210與第二主動元件T2都是朝遠離同一條第二訊號線SL2b(即位於第一光感測單元LSU1與第二光感測單元LSU2之間的第二訊號線SL2b)的方向依序設置。相似地,第二光感測單元LSU2與第三光感測單元LSU3是以第二訊號線SL2a為中心對稱設置。更具體地說,第二光感測單元LSU2與第三光感測單元LSU3各自的第二主動元件T2、感測元件210與第一主動元件T1都是朝遠離同一條第二訊號線SL2a(即位於第二光感測單元LSU2與第三光感測單元LSU3之間的第二訊號線SL2a)的方向依序設置。It is worth noting that any two neighbors of the light sensing units LSU are symmetrically arranged with one of the second signal lines SL2 as the center. For example, the first light sensing unit LSU1 and the second light sensing unit LSU2 are symmetrically arranged with the second signal line SL2b as the center. More specifically, the first active element T1, the
從另一觀點來說,這些光感測單元LSU的任兩相鄰者電性連接這些第二訊號線SL2的其中一者。舉例而言,第一光感測單元LSU1的第一主動元件T1與第二光感測單元LSU2的第一主動元件T1電性連接位於第一光感測單元LSU1與第二光感測單元LSU2之間的第二訊號線SL2b。相似地,第二光感測單元LSU2的第二主動元件T2與第三光感測單元LSU3的第二主動元件T2電性連接位於第二光感測單元LSU2與第三光感測單元LSU3之間的第二訊號線SL2a。也就是說,第一光感測單元LSU1與第二光感測單元LSU2可共用同一條第二訊號線SL2b,第二光感測單元LSU2與第三光感測單元LSU3可共用同一條第二訊號線SL2a。據此,可增加畫素陣列基板10用於電路配置的可佈局空間。From another point of view, any two neighbors of the light sensing unit LSU are electrically connected to one of the second signal lines SL2. For example, the first active element T1 of the first light sensing unit LSU1 and the first active element T1 of the second light sensing unit LSU2 are electrically connected to the first light sensing unit LSU1 and the second light sensing unit LSU2 The second signal line SL2b between. Similarly, the second active element T2 of the second light sensing unit LSU2 and the second active element T2 of the third light sensing unit LSU3 are electrically connected between the second light sensing unit LSU2 and the third light sensing unit LSU3. The second signal line SL2a between. That is, the first light sensing unit LSU1 and the second light sensing unit LSU2 can share the same second signal line SL2b, and the second light sensing unit LSU2 and the third light sensing unit LSU3 can share the same second signal line SL2b. The signal line SL2a. Accordingly, the layout space of the
進一步而言,畫素陣列基板10更包括多條第三訊號線SL3與多個觸控單元TU。這些第三訊號線SL3沿著方向X排列且在方向Y上延伸。第三訊號線SL3與第二訊號線SL2交替排列於基板110上。多個觸控單元TU電性連接這些第三訊號線SL3。在本實施例中,多個觸控單元TU可分別在方向X與方向Y上排成多列與多行,且每一觸控單元TU所佔區域於基板110上的垂直投影可重疊於多個畫素結構PX與多個光感測單元LSU所佔區域於基板110上的垂直投影。舉例而言,第三訊號線SL3可以是觸控感測訊號線,但不以此為限。Furthermore, the
在本實施例中,畫素陣列基板10還可包括多條第四訊號線SL4、多條第五訊號線SL5以及多條第六訊號線SL6。多條第四訊號線SL4沿著方向X排列且在方向Y上延伸。第四訊號線SL4與第二訊號線SL2交替排列於基板110上。多條第五訊號線SL5與多條第六訊號線SL6沿著方向Y排列且在方向X上延伸。第五訊號線SL5、第六訊號線SL6與掃描線GL交替排列於基板110上。舉例而言,光感測單元LSU的第二主動元件T2電性連接於第四訊號線SL4與第二訊號線SL2a之間。沿著方向X排列的多個光感測單元LSU的多個感測元件210電性連接至同一條第五訊號線SL5。沿著方向X排列的多個光感測單元LSU的多個第一主動元件T1電性連接至同一條第六訊號線SL6。在本實施例中,第四訊號線SL4可用以傳遞直流電壓訊號至外部的驅動晶片(未繪示),第五訊號線SL5可用以傳遞脈衝電壓訊號,第六訊號線SL6例如是重置(reset)訊號線,但本發明不以此為限。In this embodiment, the
請參照圖4,畫素陣列基板10更包括緩衝層120。在本實施例中,形成主動元件(例如第一主動元件T1)的方法可包括以下步驟:於緩衝層120上依序形成半導體圖案SC、閘絕緣層130、閘極G、層間絕緣層140、源極S與汲極D。半導體圖案SC具有源極區SR、輕摻雜源極區LSR、通道區CH、輕摻雜汲極區LDR與汲極區DR。閘極G在基板110的法線方向(例如方向Z)上重疊於半導體圖案SC的通道區CH,且源極S與汲極D貫穿層間絕緣層140與閘絕緣層130以分別電性連接半導體圖案SC的源極區SR與汲極區DR。Please refer to FIG. 4, the
在本實施例中,主動元件(例如第一主動元件T1)的閘極G可選擇性地配置在半導體圖案SC的上方(亦即,閘極G、源極S與汲極D位於半導體圖案SC的同一側),以形成頂部閘極型薄膜電晶體(top-gate TFT),但本發明不以此為限。在其他實施例中,主動元件的閘極G可選擇性地配置在半導體圖案SC的下方(亦即,閘極G位於半導體圖案SC與基板110之間),以形成底部閘極型薄膜電晶體(bottom-gate TFT)。In this embodiment, the gate G of the active device (for example, the first active device T1) can be selectively disposed above the semiconductor pattern SC (that is, the gate G, the source S, and the drain D are located on the semiconductor pattern SC On the same side of the TFT) to form a top-gate TFT, but the present invention is not limited to this. In other embodiments, the gate G of the active device can be selectively disposed under the semiconductor pattern SC (that is, the gate G is located between the semiconductor pattern SC and the substrate 110) to form a bottom gate type thin film transistor (Bottom-gate TFT).
需說明的是,閘極G、源極S、汲極D、半導體圖案SC、緩衝層120、閘絕緣層130及層間絕緣層140分別可由任何所屬技術領域中具有通常知識者所周知的用於畫素陣列基板的任一閘極、任一源極、任一汲極、任一半導體圖案、任一緩衝層、任一閘絕緣層及任一層間絕緣層來實現,且閘極G、源極S、汲極D、半導體圖案SC、緩衝層120、閘絕緣層130及層間絕緣層140分別可藉由任何所屬技術領域中具有通常知識者所周知的任一方法來形成,故於此不加以贅述。It should be noted that the gate electrode G, the source electrode S, the drain electrode D, the semiconductor pattern SC, the
在本實施例中,畫素陣列基板10還可選擇性地包括至少一遮光圖案SM。遮光圖案SM設置於緩衝層120與基板110之間,且在方向Z上重疊於主動元件(例如第一主動元件T1),以避免半導體圖案SC的電性在背光的長時間照射下而劣化。另一方面,在本實施例中,第五訊號線SL5、第六訊號線SL6(如圖2所示)與掃描線GL的材質也可選擇性地相同。亦即,第五訊號線SL5、第六訊號線SL6與掃描線GL可屬於同一膜層,且此膜層位於閘絕緣層130與層間絕緣層140之間,但不以此為限。In this embodiment, the
進一步而言,在本實施例中,形成感測元件210的方法可包括以下步驟:於層間絕緣層140上依序形成第一電極211、感測層212、第一平坦層150以及第二電極213。感測層212夾設於第一電極211與第二電極213之間。第一平坦層150覆蓋主動元件,且具有重疊於感測層212的開口150a。感測元件210的第二電極213延伸至開口150a內以覆蓋感測層212被開口150a所暴露出的部分。Furthermore, in this embodiment, the method of forming the
舉例而言,感測元件210的第一電極211電性連接第一主動元件T1的源極S,而感測元件210的第二電極213電性連接第五訊號線SL5。在本實施例中,感測元件210的第二電極213是透過連接電極CE1與第五訊號線SL5電性連接。值得一提的是,在本實施例中,第一訊號線SL1、連接電極CE1、感測元件210的第一電極211、主動元件的源極S與汲極D可屬於同一膜層(亦即,這些構件的材質可選擇性地相同),但本發明不以此為限。For example, the
在本實施例中,感測層212的材質例如是富矽氧化物(Silicon-rich oxide;SRO)或其他合適的材料。第一電極211例如是反射式電極,反射式電極的材質包括金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。第二電極213例如是光穿透式電極,光穿透式電極的材質包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。然而,本發明不限於此,根據其他實施例,第一電極211也可以是光穿透式電極。In this embodiment, the material of the
畫素陣列基板10更包括依序疊設於感測元件210上的絕緣層160、第二平坦層170、絕緣層180以及絕緣層190。絕緣層160直接覆蓋第一平坦層150與感測元件210。在本實施例中,第二訊號線SL2(例如第二訊號線SL2a與第二訊號線SL2b)、第三訊號線SL3與第四訊號線SL4可屬於同一膜層(亦即,這些構件的材質可選擇性地相同),且此膜層位於絕緣層160與第二平坦層170之間。The
進一步而言,觸控單元TU的觸控電極TE可設置在絕緣層180與絕緣層190之間,且透過連接電極CE2與第三訊號線SL3電性連接。舉例來說,畫素結構PX可包括至少一主動元件(未繪示)以及電性連接主動元件的畫素電極PE。畫素電極PE可設置於絕緣層190上。在本實施例中,畫素電極PE與連接電極CE2可屬於同一膜層。也就是說,畫素電極PE與連接電極CE2的材質可選擇性地相同,但不以此為限。Furthermore, the touch electrode TE of the touch unit TU can be disposed between the insulating
在本實施例中,為了增加畫素結構PX的開口率(aperture ratio),多條第二訊號線SL2、多條第三訊號線SL3與多條第四訊號線SL4在方向Z上可重疊於多條第一訊號線SL1,如圖2及圖4所示。值得注意的是,在本實施例中,透過多個光感測單元LSU的任兩相鄰者以多條第二訊號線SL2的其中一者為中心對稱設置以及這些光感測單元LSU的任兩相鄰者電性連接這些第二訊號線SL2的其中一者,可增加畫素陣列基板10用於電路配置的可佈局空間,例如:用於觸控感測的多條第三訊號線SL3以及用於光學感測的多條第二訊號線SL2與多條第四訊號線SL4可形成於同一膜層。換句話說,可避免所需膜層的數量增加,有助於降低生產成本。In this embodiment, in order to increase the aperture ratio of the pixel structure PX, the plurality of second signal lines SL2, the plurality of third signal lines SL3, and the plurality of fourth signal lines SL4 may overlap in the direction Z Multiple first signal lines SL1, as shown in FIG. 2 and FIG. 4. It is worth noting that in this embodiment, any two neighbors passing through the plurality of light sensing units LSU are symmetrically arranged with one of the plurality of second signal lines SL2 as the center, and any of these light sensing units LSU are arranged symmetrically. Two adjacent ones are electrically connected to one of the second signal lines SL2, which can increase the layout space of the
需說明的是,在本實施例中,第二訊號線SL2、第三訊號線SL3與第四訊號線SL4在方向X上的寬度可小於第一訊號線SL1在方向X上的寬度,但本發明不以此為限。在其他實施例中,第二訊號線SL2、第三訊號線SL3與第四訊號線SL4在方向X上的寬度也可等於第一訊號線SL1在方向X上的寬度。另一方面,在本實施例中,第二訊號線SL2、第三訊號線SL3與第四訊號線SL4可完全重疊於多條第一訊號線SL1,但本發明不以此為限。在其他實施例中,第二訊號線SL2、第三訊號線SL3與第四訊號線SL4也可部分重疊於多條第一訊號線SL1。It should be noted that, in this embodiment, the width of the second signal line SL2, the third signal line SL3, and the fourth signal line SL4 in the direction X may be smaller than the width of the first signal line SL1 in the direction X, but this The invention is not limited to this. In other embodiments, the width of the second signal line SL2, the third signal line SL3, and the fourth signal line SL4 in the direction X may also be equal to the width of the first signal line SL1 in the direction X. On the other hand, in this embodiment, the second signal line SL2, the third signal line SL3, and the fourth signal line SL4 can completely overlap the first signal lines SL1, but the invention is not limited to this. In other embodiments, the second signal line SL2, the third signal line SL3, and the fourth signal line SL4 may also partially overlap the first signal lines SL1.
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Other embodiments will be listed below to describe the disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and will not be repeated hereafter.
圖5是本發明的另一實施例的畫素陣列基板的剖視示意圖。請參照圖5,本實施例的畫素陣列基板11與圖4的畫素陣列基板10的主要差異在於:感測元件的配置膜層不同。具體而言,畫素陣列基板11的感測元件210A是設置在絕緣層160上。在本實施例中,感測元件210A的第一電極211A位於第二平坦層170與絕緣層160之間,貫穿絕緣層160與第一平坦層150以電性連接第一主動元件T1的源極S。第二平坦層170具有重疊於感測層212的開口170a,且第二電極213A延伸至開口170a內以直接覆蓋感測層212。5 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the invention. Please refer to FIG. 5, the main difference between the
在本實施例中,感測元件210A的第二電極213A是透過連接電極CE3與連接電極CE1而電性連接第五訊號線SL5,且連接電極CE3、感測元件210A的第一電極211A、第二訊號線SL2、第三訊號線SL3以及第四訊號線SL4可屬於同一膜層。另一方面,觸控單元TU的觸控電極TE是透過連接電極CE2a與連接電極CE2b而電性連接第三訊號線SL3,且連接電極CE2b與感測元件210A的第二電極213A可屬於同一膜層,但本發明不以此為限。In this embodiment, the
圖6是本發明的又一實施例的畫素陣列基板的剖視示意圖。請參照圖6,本實施例的畫素陣列基板12與圖4的畫素陣列基板10的差異在於:感測元件的電極連接方式不同。具體而言,畫素陣列基板12的感測元件210B的第一電極211B貫穿層間絕緣層140以電性連接第五訊號線SL5。感測元件210B的第二電極213B貫穿第一平坦層150以電性連接第一主動元件T1的源極S。FIG. 6 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the present invention. Please refer to FIG. 6, the difference between the
圖7是本發明的再一實施例的畫素陣列基板的剖視示意圖。請參照圖7,本實施例的畫素陣列基板13與圖5的畫素陣列基板11的差異在於:感測元件的電極連接方式不同。具體而言,畫素陣列基板13的感測元件210C的第一電極211C是直接透過連接電極CE3而電性連接第五訊號線SL5,而感測元件210C的第二電極213C與第一主動元件T1的源極S電性連接。在本實施例中,畫素陣列基板13還可包括設置於絕緣層160與第二平坦層170之間的連接電極CE4,且感測元件210C的第二電極213C是透過連接電極CE4而電性連接第一主動元件T1的源極S。FIG. 7 is a schematic cross-sectional view of a pixel array substrate according to still another embodiment of the present invention. Please refer to FIG. 7, the difference between the
綜上所述,在本發明的一實施例的畫素陣列基板中,用於顯示的多個畫素結構與多條第一訊號線沿著一方向交替排列於基板上。用於光學感測的光感測單元與多條第二訊號線也沿著所述方向交替排列於基板上。透過任兩相鄰的光感測單元以這些第二訊號線的其中一者為中心對稱設置並與其電性連接,可增加電路配置的可佈局空間,有助於簡化畫素陣列基板的製程工序並降低其生產成本。In summary, in the pixel array substrate of an embodiment of the present invention, a plurality of pixel structures for display and a plurality of first signal lines are alternately arranged on the substrate along a direction. The light sensing unit for optical sensing and a plurality of second signal lines are also alternately arranged on the substrate along the direction. By symmetrically arranging and electrically connecting any two adjacent light sensing units with one of the second signal lines as the center, the layout space of the circuit configuration can be increased, and the manufacturing process of the pixel array substrate can be simplified. And reduce its production cost.
10、11、12、13:畫素陣列基板10, 11, 12, 13: pixel array substrate
110:基板110: substrate
120:緩衝層120: buffer layer
130:閘絕緣層130: gate insulation
140:層間絕緣層140: Interlayer insulation layer
150:第一平坦層150: first flat layer
150a、170a:開口150a, 170a: opening
160、180、190:絕緣層160, 180, 190: insulating layer
170:第二平坦層170: second flat layer
210、210A、210B、210C:感測元件210, 210A, 210B, 210C: sensing element
211、211A、211B、211C:第一電極211, 211A, 211B, 211C: first electrode
212:感測層212: Sensing layer
213、213A、213B、213C:第二電極213, 213A, 213B, 213C: second electrode
CE1、CE2、CE2a、CE2b、CE3、CE4:連接電極CE1, CE2, CE2a, CE2b, CE3, CE4: connecting electrodes
CH:通道區CH: Channel area
D:汲極D: Dip pole
DR:汲極區DR: Drain region
G:閘極G: Gate
GL:掃描線GL: scan line
LDR:輕摻雜汲極區LDR: Lightly doped drain region
LSR:輕摻雜源極區LSR: Lightly doped source region
LSU、LSU1、LSU2、LSU3:光感測單元LSU, LSU1, LSU2, LSU3: light sensing unit
PE:畫素電極PE: pixel electrode
PX:畫素結構PX: Pixel structure
S:源極S: source
SC:半導體圖案SC: Semiconductor pattern
SL1:第一訊號線SL1: The first signal line
SL2、SL2a、SL2b:第二訊號線SL2, SL2a, SL2b: the second signal line
SL3:第三訊號線SL3: The third signal line
SL4:第四訊號線SL4: The fourth signal line
SL5:第五訊號線SL5: Fifth signal line
SL6:第六訊號線SL6: The sixth signal line
SM:遮光圖案SM: shading pattern
SR:源極區SR: Source region
T1:第一主動元件T1: The first active component
T2:第二主動元件T2: second active component
TE:觸控電極TE: touch electrode
TU:觸控單元TU: Touch unit
X、Y、Z:方向X, Y, Z: direction
圖1是本發明的一實施例的畫素陣列基板的俯視示意圖。 圖2是圖1的畫素陣列基板的局部區域的放大示意圖。 圖3是圖2的畫素陣列基板的電路簡圖。 圖4是圖2的畫素陣列基板的剖視示意圖。 圖5是本發明的另一實施例的畫素陣列基板的剖視示意圖。 圖6是本發明的又一實施例的畫素陣列基板的剖視示意圖。 圖7是本發明的再一實施例的畫素陣列基板的剖視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention. FIG. 2 is an enlarged schematic diagram of a partial area of the pixel array substrate of FIG. 1. FIG. 3 is a schematic circuit diagram of the pixel array substrate of FIG. 2. 4 is a schematic cross-sectional view of the pixel array substrate of FIG. 2. 5 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the invention. FIG. 6 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a pixel array substrate according to still another embodiment of the present invention.
10:畫素陣列基板 10: Pixel array substrate
210:感測元件 210: sensing element
GL:掃描線 GL: scan line
LSU1、LSU2、LSU3:光感測單元 LSU1, LSU2, LSU3: light sensing unit
PX:畫素結構 PX: Pixel structure
SL1:第一訊號線 SL1: The first signal line
SL2、SL2a、SL2b:第二訊號線 SL2, SL2a, SL2b: the second signal line
SL3:第三訊號線 SL3: The third signal line
SL4:第四訊號線 SL4: The fourth signal line
SL5:第五訊號線 SL5: Fifth signal line
SL6:第六訊號線 SL6: The sixth signal line
T1:第一主動元件 T1: The first active component
T2:第二主動元件 T2: second active component
Claims (20)
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US16/917,932 US11086452B2 (en) | 2019-11-27 | 2020-07-01 | Pixel array substrate |
CN202010927952.3A CN112038379B (en) | 2019-11-27 | 2020-09-07 | Pixel array substrate |
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US201962941248P | 2019-11-27 | 2019-11-27 | |
US62/941,248 | 2019-11-27 |
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CN101034236A (en) * | 2006-03-06 | 2007-09-12 | 株式会社日立显示器 | Image display apparatus |
CN101706621A (en) * | 2009-12-01 | 2010-05-12 | 昆山龙腾光电有限公司 | Touch-control liquid crystal display panel and manufacturing method thereof as well as touch-control liquid crystal display device |
TW201128491A (en) * | 2009-08-24 | 2011-08-16 | Semiconductor Energy Lab | Method for driving touch panel |
TW201316317A (en) * | 2011-08-19 | 2013-04-16 | Semiconductor Energy Lab | Method for driving semiconductor device |
US20130120332A1 (en) * | 2010-07-27 | 2013-05-16 | Sharp Kabushiki Kaisha | Display device |
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CN101034236A (en) * | 2006-03-06 | 2007-09-12 | 株式会社日立显示器 | Image display apparatus |
TW201128491A (en) * | 2009-08-24 | 2011-08-16 | Semiconductor Energy Lab | Method for driving touch panel |
CN101706621A (en) * | 2009-12-01 | 2010-05-12 | 昆山龙腾光电有限公司 | Touch-control liquid crystal display panel and manufacturing method thereof as well as touch-control liquid crystal display device |
US20130120332A1 (en) * | 2010-07-27 | 2013-05-16 | Sharp Kabushiki Kaisha | Display device |
TW201316317A (en) * | 2011-08-19 | 2013-04-16 | Semiconductor Energy Lab | Method for driving semiconductor device |
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