TWI721601B - 用於結構及相關設備之檢測方法和設備 - Google Patents

用於結構及相關設備之檢測方法和設備 Download PDF

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Publication number
TWI721601B
TWI721601B TW108137012A TW108137012A TWI721601B TW I721601 B TWI721601 B TW I721601B TW 108137012 A TW108137012 A TW 108137012A TW 108137012 A TW108137012 A TW 108137012A TW I721601 B TWI721601 B TW I721601B
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TW
Taiwan
Prior art keywords
feature
overlap
target
target structure
substrate
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TW108137012A
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English (en)
Chinese (zh)
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TW202024584A (zh
Inventor
埃利 巴德爾
米拉 肖恩 夏卡瓦
吉亞科摩 米瑟立
艾羅克 沃馬
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
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Publication of TW202024584A publication Critical patent/TW202024584A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
TW108137012A 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備 TWI721601B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18201147.8 2018-10-18
EP18201147.8A EP3640735A1 (en) 2018-10-18 2018-10-18 Methods and apparatus for inspection of a structure and associated apparatuses

Publications (2)

Publication Number Publication Date
TW202024584A TW202024584A (zh) 2020-07-01
TWI721601B true TWI721601B (zh) 2021-03-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW108137012A TWI721601B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備
TW110103196A TWI774219B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110103196A TWI774219B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備

Country Status (8)

Country Link
US (1) US11175592B2 (enExample)
EP (1) EP3640735A1 (enExample)
JP (1) JP7162738B2 (enExample)
KR (1) KR102604928B1 (enExample)
CN (1) CN112867970B (enExample)
IL (1) IL282180B2 (enExample)
TW (2) TWI721601B (enExample)
WO (1) WO2020078677A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11886125B2 (en) * 2020-03-02 2024-01-30 Asml Netherlands B. V. Method for inferring a local uniformity metric
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
EP4016186A1 (en) * 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170097575A1 (en) * 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System
US20180239263A1 (en) * 2013-10-30 2018-08-23 Asml Netherlands B.V. Inspection Apparatus and Methods, Substrates Having Metrology Targets, Lithographic System and Device Manufacturing Method
TWI635368B (zh) * 2015-03-13 2018-09-11 Ａｓｍｌ荷蘭公司 微影方法與微影裝置
TWI636334B (zh) * 2014-12-17 2018-09-21 Ａｓｍｌ荷蘭公司 使用圖案化裝置形貌誘導相位之方法及設備
TWI638238B (zh) * 2013-11-22 2018-10-11 卡爾蔡司Ｓｍｔ有限公司 微影投影曝光設備的照明系統

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US7111256B2 (en) * 2002-06-05 2006-09-19 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP4922112B2 (ja) * 2006-09-13 2012-04-25 エーエスエムエル マスクツールズ ビー．ブイ． パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
JP6602388B6 (ja) * 2015-03-25 2020-01-15 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法、メトロロジ装置、及びデバイス製造装置
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
US12142535B2 (en) 2016-03-01 2024-11-12 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter using a unit cell having geometric symmetry
EP3214713B1 (en) 2016-03-03 2022-05-04 General Electric Technology GmbH Improvements in or relating to electrical power systems
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180239263A1 (en) * 2013-10-30 2018-08-23 Asml Netherlands B.V. Inspection Apparatus and Methods, Substrates Having Metrology Targets, Lithographic System and Device Manufacturing Method
TWI638238B (zh) * 2013-11-22 2018-10-11 卡爾蔡司Ｓｍｔ有限公司 微影投影曝光設備的照明系統
TWI636334B (zh) * 2014-12-17 2018-09-21 Ａｓｍｌ荷蘭公司 使用圖案化裝置形貌誘導相位之方法及設備
TWI635368B (zh) * 2015-03-13 2018-09-11 Ａｓｍｌ荷蘭公司 微影方法與微影裝置
US20170097575A1 (en) * 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System

Also Published As

Publication number Publication date
IL282180B1 (en) 2024-01-01
WO2020078677A1 (en) 2020-04-23
IL282180B2 (en) 2024-05-01
CN112867970B (zh) 2024-12-27
TW202134609A (zh) 2021-09-16
IL282180A (en) 2021-05-31
US20200124983A1 (en) 2020-04-23
TWI774219B (zh) 2022-08-11
JP7162738B2 (ja) 2022-10-28
JP2022505239A (ja) 2022-01-14
US11175592B2 (en) 2021-11-16
CN112867970A (zh) 2021-05-28
EP3640735A1 (en) 2020-04-22
TW202024584A (zh) 2020-07-01
KR102604928B1 (ko) 2023-11-21
KR20210057174A (ko) 2021-05-20

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