TWI721435B - Micro light emitting diode display panel - Google Patents
Micro light emitting diode display panel Download PDFInfo
- Publication number
- TWI721435B TWI721435B TW108118097A TW108118097A TWI721435B TW I721435 B TWI721435 B TW I721435B TW 108118097 A TW108118097 A TW 108118097A TW 108118097 A TW108118097 A TW 108118097A TW I721435 B TWI721435 B TW I721435B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating
- film transistor
- emitting diode
- thin film
- transistor substrate
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000011358 absorbing material Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Theoretical Computer Science (AREA)
Abstract
Description
本發明涉及顯示技術領域,尤其涉及微型發光二極體顯示面板。 The present invention relates to the field of display technology, and in particular to a miniature light-emitting diode display panel.
顯示技術的快速發展帶來了透明顯示技術的誕生。對於習知的顯示面板,通常光線無法從其背面穿透到其正面,導致無法從顯示面板的正面(即圖像觀看側)看到位於顯示面板背面的物體。 The rapid development of display technology has brought about the birth of transparent display technology. For the conventional display panel, generally, light cannot penetrate from the back to the front, so that the object on the back of the display panel cannot be seen from the front of the display panel (ie, the image viewing side).
本發明提供一種微型發光二極體顯示面板,其包括:薄膜電晶體基板,具有相對的第一表面及第二表面;複數微型發光二極體,間隔設置於所述薄膜電晶體基板的第一表面;第一絕緣層,設置於所述薄膜電晶體基板的第一表面;以及第二絕緣層,包括間隔排佈的複數第二絕緣單元,每一個第二絕緣單元層疊於所述第一絕緣層遠離所述薄膜電晶體基板的一側,所述第二絕緣層的材質為光吸收材料,所述複數微型發光二極體嵌設於所述第一絕緣層及所述第二絕緣單元中; 所述薄膜電晶體基板的第一表面未被所述複數第二絕緣單元覆蓋的區域為透光區域。 The present invention provides a miniature light-emitting diode display panel, which includes: a thin-film transistor substrate having a first surface and a second surface opposite to each other; a plurality of micro-light-emitting diodes are arranged at intervals on the first of the thin-film transistor substrate. Surface; a first insulating layer disposed on the first surface of the thin film transistor substrate; and a second insulating layer, including a plurality of second insulating units arranged at intervals, each second insulating unit laminated on the first insulating Layer away from the side of the thin film transistor substrate, the material of the second insulating layer is a light absorbing material, and the plurality of micro light emitting diodes are embedded in the first insulating layer and the second insulating unit ; The area of the first surface of the thin film transistor substrate that is not covered by the plurality of second insulating units is a light-transmitting area.
該薄膜電晶體基板的第一表面未被複數第二絕緣單元覆蓋的區域為透光區域,使得位於微型發光二極體顯示面板背面處的光線能從薄膜電晶體基板的第二表面進入,穿過薄膜電晶體基板,並從薄膜電晶體基板的第一表面未被第二絕緣單元覆蓋的區域射出達到微型發光二極體顯示面板的正面,進而能夠看清楚微型發光二極體顯示面板背面的物體。 The area of the first surface of the thin film transistor substrate that is not covered by the plurality of second insulating units is a light-transmitting area, so that light at the back of the micro light emitting diode display panel can enter from the second surface of the thin film transistor substrate and pass through Through the thin film transistor substrate, and from the area of the first surface of the thin film transistor substrate not covered by the second insulating unit, it is emitted to the front of the micro light emitting diode display panel, and then the back surface of the micro light emitting diode display panel can be clearly seen. object.
100、200:微型發光二極體顯示面板 100, 200: Miniature LED display panel
10:薄膜電晶體基板 10: Thin film transistor substrate
11:第一表面 11: The first surface
12:第二表面 12: second surface
13:基底 13: Base
14:薄膜電晶體 14: Thin film transistor
141:閘極 141: Gate
142:閘極絕緣層 142: Gate insulation layer
143:半導體層 143: Semiconductor layer
144:源極 144: Source
145:汲極 145: Dip pole
15:平坦化層 15: Planarization layer
151:通孔 151: Through hole
20:微型發光二極體 20: Miniature LED
21:畫素單元 21: Pixel unit
201:綠色微型發光二極體 201: Green miniature LED
202:藍色微型發光二極體 202: Blue miniature light-emitting diode
203:紅色微型發光二極體 203: Red miniature LED
30:第一絕緣層 30: first insulating layer
31:第一絕緣單元 31: The first insulation unit
40:導電層 40: conductive layer
41:導電單元 41: Conductive unit
50:第二絕緣層 50: second insulating layer
51:第二絕緣單元 51: second insulation unit
D1:第一方向 D1: First direction
D2:第二方向 D2: second direction
圖1為本發明第一實施例的微型發光二極體顯示面板的俯視示意圖。 FIG. 1 is a schematic top view of a micro light emitting diode display panel according to a first embodiment of the invention.
圖2為圖1沿剖面線II-II剖開的剖面示意圖。 Fig. 2 is a schematic cross-sectional view of Fig. 1 taken along the section line II-II.
圖3為圖2中的薄膜電晶體基板的剖面示意圖。 FIG. 3 is a schematic cross-sectional view of the thin film transistor substrate in FIG. 2.
圖4為圖1沿剖面線IV-IV剖開的剖面示意圖。 Fig. 4 is a schematic cross-sectional view taken along the section line IV-IV of Fig. 1.
圖5為本發明第二實施例的微型發光二極體顯示面板的俯視示意圖。 5 is a schematic top view of a micro light emitting diode display panel according to a second embodiment of the invention.
圖6為圖5沿剖面線VI-VI剖開的剖面示意圖。 Fig. 6 is a schematic cross-sectional view of Fig. 5 taken along the section line VI-VI.
圖7為圖5沿剖面線VII-VII剖開的剖面示意圖。 Fig. 7 is a schematic cross-sectional view of Fig. 5 taken along the section line VII-VII.
附圖中示出了本發明的實施例,本發明可以藉由多種不同形式實現,而並不應解釋為僅局限於這裡所闡述的實施例。相反,提供該等實施例是 為了使本發明更為全面及完整的公開,並使本領域的技術人員更充分地瞭解本發明的範圍。為了清晰可見,在圖中,層及區域的尺寸被放大了。 The accompanying drawings show embodiments of the present invention. The present invention can be implemented in a variety of different forms, and should not be interpreted as being limited to the embodiments set forth herein. Instead, the examples provided are In order to make the disclosure of the present invention more comprehensive and complete, and to enable those skilled in the art to fully understand the scope of the present invention. In order to be clearly visible, in the figure, the size of the layers and regions have been enlarged.
本申請中的“微型發光二極體”是指尺寸小於100微米的發光二極體,更確切地說,是指尺寸大約在1微米到100微米的範圍的發光二極體。 The "miniature light-emitting diode" in this application refers to a light-emitting diode with a size of less than 100 microns, more specifically, a light-emitting diode with a size in the range of about 1 micron to 100 microns.
如圖1及圖2所示,本發明第一實施例的微型發光二極體顯示面板100包括薄膜電晶體(Thin Film Transistor,TFT)基板10以及間隔設置於薄膜電晶體基板10上的複數微型發光二極體20。薄膜電晶體基板10具有相對的第一表面11及第二表面12。複數微型發光二極體20設置於第一表面11。
As shown in FIGS. 1 and 2, the miniature light-emitting
如圖1所示,複數微型發光二極體20呈矩陣排佈。圖1僅示意性的示出了沿D1方向延伸的三列微型發光二極體20,微型發光二極體20排列的列數及總的數量可遠多於圖中所示例的列數及數量。如圖2所示,微型發光二極體顯示面板100還包括依次層疊於第一表面11上的第一絕緣層30、導電層40及第二絕緣層50。導電層40位於第一絕緣層30及第二絕緣層50之間。複數微型發光二極體20嵌設在第二絕緣層50及第一絕緣層30中,但並未被第二絕緣層50及第一絕緣層30完全包裹。每一微型發光二極體20至少遠離薄膜電晶體基板10的端部從第二絕緣層50露出。
As shown in FIG. 1, the plurality of micro
如圖1及圖2所示,第一絕緣層30、導電層40、第二絕緣層50並非全部覆蓋薄膜電晶體基板10的第一表面11,而是局部覆蓋薄膜電晶體基板10的第一表面11。第一絕緣層30包括間隔排佈的複數第一絕緣單元31,導電層40包括間隔排佈的複數導電單元41,第二絕緣層50包括間隔排佈的複數第二絕緣單元51。每一個第二絕緣單元51層疊於一個第一絕緣單元31上,每一個第一絕緣單元31與其對應的第二絕緣單元51之間設置有至少一個導電單元
41。藉此,薄膜電晶體基板10的第一表面11位於相鄰的二第一絕緣單元31上之間的區域為空白的區域。
As shown in FIGS. 1 and 2, the first
如圖1所示,每一個第一絕緣單元31、每一個導電單元41以及每一個第二絕緣單元51均沿第一方向D1延伸成長條狀,且對應沿第一方向D1排佈的一列微型發光二極體20。如圖4所示,每一列微型發光二極體20嵌設在一個第一絕緣單元31、一個導電單元41以及一個第二絕緣單元51中。
As shown in FIG. 1, each first
如圖1及圖2所示,每一個導電單元41在薄膜電晶體基板10上的投影均落入其對應的第二絕緣單元51在薄膜電晶體基板10上的投影中。每一個第二絕緣單元51在薄膜電晶體基板10上的投影均落入其對應的第一絕緣單元31在薄膜電晶體基板10上的投影中。每一個第二絕緣單元51沿第二方向D2(與第一方向D1垂直)的寬度d小於其對應的第一絕緣單元31沿第二方向D2的寬度。
As shown in FIGS. 1 and 2, the projection of each
於一實施例中,第一絕緣層30為透明的,其材質為本領域常規使用的各種透明絕緣材料。第二絕緣層50的材質為本領域常規使用的光吸收材料,例如黑矩陣樹脂,以對相鄰的微型發光二極體20之間的區域進行遮擋,緩解串擾的問題。
In one embodiment, the first insulating
於一實施例中,第一絕緣層30和第二絕緣層50都可以藉由噴墨印刷(inkjet printing,IJP)工藝圖案化形成在TFT基板10上。在其他實施例中,第一絕緣層30和第二絕緣層50還可以為,先藉由諸如化學氣相沉積(chemical vapor deposition,CVD),噴墨印刷或濺射工藝沉積在TFT基板10上,然後再藉由光刻法圖案化形成。
In one embodiment, both the first insulating
如圖3所示,薄膜電晶體基板10包括透明的基底13、形成在基底13上的複數薄膜電晶體14(圖中僅示意性地畫出一個)以及覆蓋複數薄膜電晶體14遠離基底13一側的透明的平坦化層15。其中,第一表面11為薄膜電晶體14遠離基底13的一側,第二表面12為基底13未設置有薄膜電晶體14的一側。
As shown in FIG. 3, the thin
於一實施例中,薄膜電晶體14為在可見光區域的透光率較高的透明的薄膜電晶體。具體地,基底13的材質例如為透明的玻璃。透明的薄膜電晶體14,包括閘極141、設置在閘極141上的閘極絕緣層142、設置在閘極141上的半導體層143、設置在半導體層143及閘極絕緣層142上的源極144及汲極145。其中,閘極141、源極144及汲極145可採用透明的導電材料,例如,氧化銦錫(Indium Tin Oxides,ITO)、碳奈米管等;柵絕緣層可採用Al2O3及TiO2的超晶格薄膜(ATO);半導體層143可採用n-ZnO材料。平坦化層15的材質可為透明性較好的材料,例如聚甲基丙烯酸甲酯、聚醯亞胺、聚酯等。
In one embodiment, the
由於第二絕緣單元51的材質為光吸收材料,是故,薄膜電晶體基板10被第二絕緣單元51在薄膜電晶體基板10上的投影覆蓋的區域形成為非透光區域。另,由於第一絕緣單元31為透明的,是故,薄膜電晶體基板10未被第二絕緣單元51在薄膜電晶體基板10上的投影覆蓋的區域形成為透光區域。藉此,薄膜電晶體基板10對應相鄰的二第二絕緣單元51上之間的區域為透明的區域(透光區域),使得位於微型發光二極體顯示面板100背面處的光線能從薄膜電晶體基板10的第二表面12進入,穿過薄膜電晶體基板10,並從薄膜電晶體基板10的第一表面11未被複數第二絕緣單元51覆蓋的區域射出達到微型發光二極體顯示面板100的正面。
Since the material of the second insulating
於另一實施例中,薄膜電晶體14亦可僅設置於基底13的被複數第二絕緣單元51覆蓋的區域,即,對應於基底13的未被複數第二絕緣單元51覆蓋的區域不設置薄膜電晶體14,且薄膜電晶體14可為透明的薄膜電晶體,但不限於此。藉此,薄膜電晶體基板10對應相鄰的二第二絕緣單元51上之間的區域亦為透明的區域(透光區域),使得位於微型發光二極體顯示面板100背面處的光線能從薄膜電晶體基板10的第二表面12進入,穿過薄膜電晶體基板10,並從薄膜電晶體基板10的第一表面11未被複數第二絕緣單元51覆蓋的區域射出達到微型發光二極體顯示面板100的正面。
In another embodiment, the
如圖1所示,透光區域的大小可藉由調整每一個第二絕緣單元51沿第二方向D2的寬度d及相鄰的二第二絕緣單元51沿第二方向D2的間距e進行調整。
As shown in FIG. 1, the size of the light-transmitting area can be adjusted by adjusting the width d of each second insulating
於一實施例中,透光區域的面積與所述薄膜電晶體基板10的第一表面11的面積的比值不小於30%。例如,透光區域的面積與所述薄膜電晶體基板10的第一表面11的面積的比值可為30%,35%,40%,48%,50%,甚至大於50%。如圖1所示,本實施例中,每一個第二絕緣單元51沿第二方向D2的寬度d小於相鄰的二第二絕緣單元51沿第二方向D2的間距e,使微型發光二極體顯示面板100的不到50%的顯示區域被微型發光二極體20及第二絕緣單元51佔用(即為非透光區域),另大於50%的顯示區域為透明的或空白的(即為透光區域)。即,透光區域的面積與薄膜電晶體基板10的第一表面11的面積的比值不小於50%。是故,微型發光二極體顯示面板100中,從第二表面12至第一表面11的光線穿透率可達到50%及以上。
In an embodiment, the ratio of the area of the light-transmitting region to the area of the
如圖1及圖2所示,沿第一方向D1上,相鄰的二微型發光二極體20的最短距離a不大於100微米。複數第二絕緣單元51相互平行且沿與第一方向D1垂直的第二方向D2排佈為一行,嵌設於相鄰的二第二絕緣單元51中的相鄰的二微型發光二極體20之間的最短距離b不大於100微米。每一微型發光二極體20的寬度c小於10微米。
As shown in FIGS. 1 and 2, along the first direction D1, the shortest distance a between two adjacent micro
每一個微型發光二極體20為本領域常規使用的微型發光二極體20。每一個微型發光二極體20靠近薄膜電晶體基板10的一端設置有第一電極(圖未示),其遠離薄膜電晶體基板10的一端相對第二絕緣層50露出並覆蓋設置有第二電極(圖未示)。每一個微型發光二極體20的第一電極電性連接薄膜電晶體基板10上的一個薄膜電晶體14,以獲得陽極或陰極的電壓。於一實施例中,如圖3所示,薄膜電晶體基板10的平坦化層15設有暴露薄膜電晶體14的通孔151,每一個微型發光二極體20的第一電極可藉由通孔151電性連接一個薄膜電晶體14的汲極145,以獲得陽極或陰極的電壓,每一個微型發光二極體20的第二電極連接外部電路,以獲得陰極或陽極的電壓,當第一電極及第二電極之間形成電勢差,微型發光二極體20將發光。
Each miniature light-emitting
如圖1所示,每一個導電單元41圍繞至少一個微型發光二極體20。導電單元41用於施加一不同於微型發光二極體20的陰陽極的電壓的電壓,以對微型發光二極體20內部的載流子進行限制。
As shown in FIG. 1, each
如圖1所示,微型發光二極體顯示面板100定義有複數畫素單元21。本實施例中,畫素單元21成矩陣排佈。每一個畫素單元21包括發不同顏色光的複數微型發光二極體20。
As shown in FIG. 1, the micro light emitting
如圖1所示,每一個畫素單元21包括一個發綠光的綠色微型發光二極體201(圖1中以G示意)、一個發藍光的藍色微型發光二極體202(圖1中以B示意)以及一個發紅光的紅色微型發光二極體203(圖1中以R示意)。每一個畫素單元21中的一個綠色微型發光二極體201、一個藍色微型發光二極體202以及一個紅色微型發光二極體203沿第一方向D1間隔排佈,複數畫素單元21為一行綠色微型發光二極體201、一行藍色微型發光二極體202以及一行紅色微型發光二極體203交替週期性重複排佈。
As shown in FIG. 1, each
如圖5至圖7所示,本發明第二實施例的微型發光二極體顯示面板200與本發明第一實施例的微型發光二極體顯示面板100區別在於:第二實施例中,第一絕緣層30完全覆蓋薄膜電晶體基板10的第一表面11,複數微型發光二極體20嵌設於第一絕緣層30及第二絕緣單元51中。藉此,可省去對第一絕緣層30圖案化以形成複數第一絕緣單元31的步驟,簡化製作流程。
As shown in FIGS. 5 to 7, the difference between the micro light emitting
微型發光二極體顯示面板100、200可以適用於汽車平視顯示器(HUD),因為它們可以承受較高的溫度並在陽光直射下提供更好的可讀性。
The miniature light-emitting
微型發光二極體顯示面板100、200可用於數位標牌、產品展示、智慧視窗、平視顯示器(HUD)、增強現實(AR)等。
The miniature light-emitting
可以理解地,透光區域亦可用於嵌入感測器以測量溫度、空氣污染顆粒或太陽能電池以製造智慧化微型發光二極體顯示面板100、200。
Understandably, the light-transmitting area can also be used to embed sensors to measure temperature, air pollution particles, or solar cells to manufacture smart miniature light-emitting
以上實施方式僅用以說明本發明的技術方案而非限制,儘管參照較佳實施方式對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術方案的精神及範圍。 The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced. Without departing from the spirit and scope of the technical solution of the present invention.
100:微型發光二極體顯示面板 100: Miniature LED display panel
10:薄膜電晶體基板 10: Thin film transistor substrate
11:第一表面 11: The first surface
12:第二表面 12: second surface
20:微型發光二極體 20: Miniature LED
30:第一絕緣層 30: first insulating layer
31:第一絕緣單元 31: The first insulation unit
40:導電層 40: conductive layer
41:導電單元 41: Conductive unit
50:第二絕緣層 50: second insulating layer
51:第二絕緣單元 51: second insulation unit
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862677070P | 2018-05-28 | 2018-05-28 | |
US62/677070 | 2018-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202005135A TW202005135A (en) | 2020-01-16 |
TWI721435B true TWI721435B (en) | 2021-03-11 |
Family
ID=68614017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108118097A TWI721435B (en) | 2018-05-28 | 2019-05-24 | Micro light emitting diode display panel |
Country Status (3)
Country | Link |
---|---|
US (1) | US11189607B2 (en) |
CN (1) | CN110797369B (en) |
TW (1) | TWI721435B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI708382B (en) * | 2018-07-25 | 2020-10-21 | 錼創顯示科技股份有限公司 | Micro led display panel |
US11163192B2 (en) * | 2019-06-17 | 2021-11-02 | PlayNitride Display Co., Ltd. | Display apparatus |
CN110517595A (en) * | 2019-08-30 | 2019-11-29 | 京东方科技集团股份有限公司 | A kind of transparent display panel and transparent display |
CN111540763B (en) * | 2020-05-14 | 2022-10-04 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
TWI812249B (en) * | 2022-05-30 | 2023-08-11 | 鴻海精密工業股份有限公司 | Red micro led display panel and separated panel display device having the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106941108A (en) * | 2017-05-23 | 2017-07-11 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
TW201810637A (en) * | 2016-04-22 | 2018-03-16 | 友達光電股份有限公司 | Micro light emitting diode structure, pixel unit, and light emitting diode display panel |
US20180092173A1 (en) * | 2016-09-26 | 2018-03-29 | Prilit Optronics, Inc. | Microled display panel |
TW201817036A (en) * | 2016-10-27 | 2018-05-01 | 友達光電股份有限公司 | Temporary carrier device, display panel, and methods of manufacturing both, and method of testing micro light emitting devices |
US20180122837A1 (en) * | 2016-10-28 | 2018-05-03 | Lg Display Co., Ltd. | Light emitting diode display device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237348B (en) * | 2010-04-20 | 2015-08-05 | 鸿富锦精密工业(深圳)有限公司 | LED microarray packaging structure and manufacture method thereof |
TWI440240B (en) | 2011-04-08 | 2014-06-01 | Chunghwa Picture Tubes Ltd | Organic light emitting diode device |
US9159700B2 (en) * | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9818725B2 (en) * | 2015-06-01 | 2017-11-14 | X-Celeprint Limited | Inorganic-light-emitter display with integrated black matrix |
US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
CN106159071A (en) * | 2015-04-23 | 2016-11-23 | 鸿富锦精密工业(深圳)有限公司 | LED package |
KR102591412B1 (en) * | 2016-02-16 | 2023-10-19 | 엘지전자 주식회사 | Display device using semiconductor light emitting diode |
KR102631259B1 (en) * | 2016-09-22 | 2024-01-31 | 삼성디스플레이 주식회사 | Display apparatus |
CN107170773B (en) * | 2017-05-23 | 2019-09-17 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
TWI668619B (en) * | 2017-07-07 | 2019-08-11 | 鴻海精密工業股份有限公司 | Micro LED touch display panel |
US10707266B2 (en) * | 2017-11-23 | 2020-07-07 | Century Micro Display Technology (Shenzhen) Co., Ltd. | Micro LED display panel with double-sides display |
US11114499B2 (en) * | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
-
2019
- 2019-05-24 US US16/421,848 patent/US11189607B2/en active Active
- 2019-05-24 TW TW108118097A patent/TWI721435B/en active
- 2019-05-24 CN CN201910438700.1A patent/CN110797369B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201810637A (en) * | 2016-04-22 | 2018-03-16 | 友達光電股份有限公司 | Micro light emitting diode structure, pixel unit, and light emitting diode display panel |
US20180092173A1 (en) * | 2016-09-26 | 2018-03-29 | Prilit Optronics, Inc. | Microled display panel |
TW201817036A (en) * | 2016-10-27 | 2018-05-01 | 友達光電股份有限公司 | Temporary carrier device, display panel, and methods of manufacturing both, and method of testing micro light emitting devices |
US20180122837A1 (en) * | 2016-10-28 | 2018-05-03 | Lg Display Co., Ltd. | Light emitting diode display device |
CN106941108A (en) * | 2017-05-23 | 2017-07-11 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20190363127A1 (en) | 2019-11-28 |
US11189607B2 (en) | 2021-11-30 |
TW202005135A (en) | 2020-01-16 |
CN110797369B (en) | 2022-08-16 |
CN110797369A (en) | 2020-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI721435B (en) | Micro light emitting diode display panel | |
US10776065B2 (en) | Display device comprising two display panels | |
KR102090709B1 (en) | White organic light emitting display device | |
JP6674013B2 (en) | Organic light emitting display and method of manufacturing the same | |
CN103794735B (en) | Organic el device, the manufacture method of organic el device, electronic equipment | |
KR102434293B1 (en) | Semiconductor device | |
KR20190035609A (en) | Display panel and display device | |
CN104635967B (en) | Organic Light Emitting Diode touch control display device | |
KR101097343B1 (en) | Organic light emitting display apparatus | |
JP6045276B2 (en) | Organic EL display device and method of manufacturing organic EL display device | |
WO2019205549A1 (en) | Double-sided display panel and preparation method therefor | |
TW201306349A (en) | Display unit and method of manufacturing the same | |
TWI429326B (en) | Light emitting device and manufacturing method thereof | |
KR20150003466A (en) | Mirror type display apparatus and methode of manufacturing the same | |
WO2015096356A1 (en) | Double-sided display panel | |
CN110911439B (en) | Display panel, display screen and display terminal | |
KR20240009381A (en) | Display substrate and display device | |
KR20180077752A (en) | Organic light emitting display device | |
CN102110707A (en) | Light emitting device and manufacturing method thereof | |
JP2014191166A (en) | Display device | |
US11861126B2 (en) | Electronic device including a sensor layer with increased sensing sensitivity | |
TWI754181B (en) | Light emitting device and electrodes thereof | |
KR20230143258A (en) | Display device and head mount display device | |
CN111435695A (en) | Light emitting device and electrode thereof |