TWI721314B - Abnormality detection device and abnormality detection method - Google Patents
Abnormality detection device and abnormality detection method Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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Abstract
Description
本發明係關於異常檢測裝置及異常檢測方法。 The present invention relates to an abnormality detection device and an abnormality detection method.
當在基板處理裝置產生某些障礙(錯誤)時,基板處理裝置會產生警報(例如參照專利文獻1)。藉由產生警報而通知使用者禁止使用基板處理裝置(腔室)。典型而言,當基板處理裝置之各參數中之任一參數值超過預先設定之臨限值時,將產生警報。 When some trouble (error) occurs in the substrate processing apparatus, the substrate processing apparatus generates an alarm (for example, refer to Patent Document 1). By generating an alarm, the user is notified that the use of the substrate processing apparatus (chamber) is prohibited. Typically, when any of the parameters of the substrate processing device exceeds a preset threshold, an alarm will be generated.
一般而言,對於各參數之臨限值係為了可使基板處理裝置對基板確實地施以既定之處理程序而被設定。換言之,臨限值係為了不發生第2型誤差(Type II Error)而被設定。即,為了不漏失錯誤之產生而被設定。基板處理裝置之參數係包含,例如:腔室排氣壓、腔室內壓、腔室內溫度、針閥之開度、處理液之流量及處理液之液溫。再者,第1型誤差(Type I Error)係誤檢測錯誤產生之失誤。 Generally speaking, the threshold value of each parameter is set so that the substrate processing apparatus can reliably apply a predetermined processing program to the substrate. In other words, the threshold is set so that Type II Error does not occur. That is, it is set so as not to miss the occurrence of errors. The parameters of the substrate processing device include, for example, the exhaust pressure of the chamber, the pressure in the chamber, the temperature in the chamber, the opening of the needle valve, the flow rate of the processing liquid, and the liquid temperature of the processing liquid. Furthermore, Type I Error is the error caused by the misdetection error.
[專利文獻1]日本專利特開2008-004112號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-004112
然而,於為了不發生第2型誤差而設定臨限值之情況下,有可能增加第1型誤差。具體而言,儘管實際上為可執行處理程序之狀態,但有可能某個參數值超過臨限值,而產生警報。亦即,有可能誤檢測異常。 However, in the case where the threshold value is set so that the
本發明係鑑於上述課題而完成者,其目的在於提供可使誤檢測異常之可能性降低之異常檢測裝置及異常檢測方法。 The present invention was made in view of the above-mentioned problems, and its object is to provide an abnormality detection device and an abnormality detection method that can reduce the possibility of erroneous detection of abnormalities.
本發明之異常檢測裝置係檢測基板處理裝置之異常。上述基板處理裝置對於基板執行既定之處理程序。上述異常檢測裝置具備記憶部及控制部。上述記憶部記憶自複數個監視對象獲得之變動值之統計性的基準範圍。上述控制部自上述複數個監視對象取得上述變動值,根據上述基準範圍而計算出所取得之上述變動值之統計性的異常度。上述控制部參照上述異常度而判定可否執行上述既定之處理程序。 The abnormality detection device of the present invention detects abnormality of the substrate processing device. The above-mentioned substrate processing apparatus executes a predetermined processing program for the substrate. The abnormality detection device described above includes a memory unit and a control unit. The storage unit stores the statistical reference range of fluctuation values obtained from a plurality of monitoring objects. The control unit obtains the variation value from the plurality of monitoring objects, and calculates the degree of statistical abnormality of the obtained variation value based on the reference range. The control unit refers to the degree of abnormality to determine whether the predetermined processing program can be executed.
於某實施形態中,上述記憶部記憶對於上述異常度之臨限值。 In an embodiment, the storage unit stores the threshold value for the abnormality degree.
於某實施形態中,上述控制部藉由上述異常度是否超過上述臨限值而判定可否執行上述既定之處理程序。 In an embodiment, the control unit determines whether the predetermined processing program can be executed based on whether the abnormality degree exceeds the threshold value.
於某實施形態中,上述異常檢測裝置具備供作業員操作之輸入部。上述輸入部受理選擇複數個臨限值中之一者之指示。上述記憶部記憶所選擇之上述臨限值。 In a certain embodiment, the said abnormality detection apparatus is equipped with the input part which an operator can operate. The input unit accepts an instruction to select one of a plurality of threshold values. The memory unit memorizes the selected threshold value.
於某實施形態中,上述基板處理裝置可執行複數個處理程序。上述記憶部對每個上述處理程序記憶上述基準範圍。上述控制部計算出上述複數個處理程序各者之上述異常度,判定可否執 行上述複數個處理程序之各者。 In an embodiment, the above-mentioned substrate processing apparatus can execute a plurality of processing programs. The storage unit stores the reference range for each processing program. The control unit calculates the abnormality degree of each of the plurality of processing programs, and determines whether each of the plurality of processing programs can be executed.
於某實施形態中,上述監視對象於每個上述處理程序中係不同。 In an embodiment, the monitoring target is different for each processing program.
於某實施形態中,對於每個上述處理程序,上述記憶部記憶對於上述異常度之臨限值。 In one embodiment, for each of the above-mentioned processing programs, the above-mentioned storage unit stores the threshold value for the above-mentioned abnormality degree.
於某實施形態中,上述控制部藉由上述複數個處理程序之各者之上述異常度是否超過對應之上述臨限值,而判定可否執行上述複數個處理程序之各者。 In an embodiment, the control unit determines whether each of the plurality of processing procedures can be executed based on whether the degree of abnormality of each of the plurality of processing procedures exceeds the corresponding threshold value.
於某實施形態中,上述異常檢測裝置具備供作業員操作之輸入部。上述輸入部係對於每個上述處理程序受理選擇複數個臨限值中之一者之指示。上述記憶部記憶所選擇之上述臨限值。 In a certain embodiment, the said abnormality detection apparatus is equipped with the input part which an operator can operate. The input unit accepts an instruction to select one of a plurality of threshold values for each of the processing procedures. The memory unit memorizes the selected threshold value.
於某實施形態中,上述控制部根據異常檢測法或離群值(outlier)檢測法而計算出上述異常度。 In an embodiment, the control unit calculates the degree of abnormality based on an abnormality detection method or an outlier detection method.
於某實施形態中,上述記憶部記憶單位空間作為上述基準範圍。上述控制部計算出馬哈朗諾比斯距離(Mahalanobis distance)作為上述異常度。 In an embodiment, the storage unit stores a unit space as the reference range. The control unit calculates Mahalanobis distance as the degree of abnormality.
本發明之異常檢測方法係檢測基板處理裝置之異常之方法。上述基板處理裝置對基板執行既定之處理程序。上述異常檢測方法包含基準範圍取得步驟、異常度算出步驟及異常判定步驟。於上述基準範圍取得步驟中,取得自複數個監視對象獲得之變動值之統計性的基準範圍。於上述異常度算出步驟中,自上述複數個監視對象取得上述變動值,根據上述基準範圍而計算出所取得之上述變動值之統計性的異常度。於上述異常判定步驟中,參照上述異常度而判定可否執行上述既定之處理程序。 The abnormality detection method of the present invention is a method for detecting abnormality of a substrate processing device. The above-mentioned substrate processing apparatus executes a predetermined processing program on the substrate. The above-mentioned abnormality detection method includes a reference range acquisition step, an abnormality degree calculation step, and an abnormality determination step. In the above-mentioned reference range obtaining step, a statistical reference range of variation values obtained from a plurality of monitoring objects is obtained. In the abnormality degree calculation step, the variation value is obtained from the plurality of monitoring objects, and the statistical abnormality degree of the obtained variation value is calculated based on the reference range. In the above abnormality determination step, it is determined whether the above-mentioned predetermined processing program can be executed with reference to the above-mentioned abnormality degree.
於某實施形態中,上述異常檢測方法進而包含設定對於上述異常度之臨限值之臨限值設定步驟。 In an embodiment, the above-mentioned abnormality detection method further includes a threshold value setting step of setting a threshold value for the above-mentioned abnormality degree.
在某實施形態,於上述異常判定步驟中,藉由上述異常度是否超過上述臨限值而判定可否執行上述既定之處理程序。 In an embodiment, in the abnormality determination step, it is determined whether the predetermined processing program can be executed based on whether the abnormality degree exceeds the threshold value.
在某實施形態,於上述臨限值設定步驟中,設定自複數個臨限值中選擇之臨限值。 In an embodiment, in the above-mentioned threshold value setting step, a threshold value selected from a plurality of threshold values is set.
在某實施形態中,上述基板處理裝置可執行複數個處理程序。於上述基準範圍取得步驟中,對每個上述處理程序取得上述基準範圍。於上述異常度算出步驟中,計算出上述複數個處理程序中的由上述基板處理裝置執行中之上述處理程序之上述異常度。於上述異常判定步驟中,判定可否執行上述複數個處理程序中的由上述基板處理裝置執行中之上述處理程序。 In an embodiment, the substrate processing apparatus can execute a plurality of processing programs. In the above-mentioned reference range obtaining step, the above-mentioned reference range is obtained for each of the above-mentioned processing procedures. In the abnormality degree calculation step, the abnormality degree of the processing program being executed by the substrate processing apparatus among the plurality of processing programs is calculated. In the abnormality determination step, it is determined whether or not the above-mentioned processing program which is executed by the above-mentioned substrate processing apparatus among the above-mentioned plural processing programs can be executed.
在某實施形態中,上述監視對象於每個上述處理程序中係不同。 In an embodiment, the monitoring target is different for each processing program.
在某實施形態中,上述異常檢測方法進而包含臨限值設定步驟,該臨限值設定步驟對於每個上述處理程序設定上述異常度之臨限值。 In an embodiment, the abnormality detection method further includes a threshold value setting step that sets the threshold value of the abnormality degree for each of the processing programs.
在某實施形態,於上述異常判定步驟中,藉由利用上述基板處理裝置執行中之上述處理程序之上述異常度是否超過對應之上述臨限值,而判定可否執行由上述基板處理裝置執行中之上述處理程序。 In an embodiment, in the abnormality determination step, whether the abnormality degree of the processing program being executed by the substrate processing apparatus exceeds the corresponding threshold value is used to determine whether the processing performed by the substrate processing apparatus can be executed. The above processing procedure.
在某實施形態,於上述臨限值設定步驟中,對於每個上述處理程序,設定自複數個臨限值中選擇之臨限值。 In an embodiment, in the above threshold value setting step, for each of the above processing procedures, a threshold value selected from a plurality of threshold values is set.
在某實施形態,於上述異常度算出步驟中,根據異常 檢測法或離群值檢測法而計算出上述異常度。 In an embodiment, in the abnormality degree calculation step, the abnormality degree is calculated according to an abnormality detection method or an outlier detection method.
在某實施形態,於上述基準範圍取得步驟中,取得單位空間作為上述基準範圍。於上述異常度算出步驟中,計算出馬哈朗諾比斯距離作為上述異常度。 In an embodiment, in the reference range acquisition step, a unit space is acquired as the reference range. In the aforementioned abnormality degree calculation step, the Mahalanobis distance is calculated as the aforementioned abnormality degree.
根據本發明,可減低誤檢測異常之可能性。 According to the present invention, the possibility of false detection of abnormalities can be reduced.
1‧‧‧旋轉夾頭 1‧‧‧Rotating Chuck
2‧‧‧SC1供給機構 2‧‧‧SC1 Supply Organization
3‧‧‧SC2供給機構 3‧‧‧SC2 Supply Organization
4‧‧‧HF供給機構 4‧‧‧HF supply mechanism
5‧‧‧SPM供給機構 5‧‧‧SPM Supply Organization
6‧‧‧淋洗液供給機構 6‧‧‧Eluent supply mechanism
7‧‧‧腔室 7‧‧‧ Chamber
7a‧‧‧第1腔室 7a‧‧‧The first chamber
7b‧‧‧第2腔室 7b‧‧‧The second chamber
7c‧‧‧第3腔室 7c‧‧‧
7d‧‧‧第4腔室 7d‧‧‧
7e‧‧‧第5腔室 7e‧‧‧The 5th chamber
11‧‧‧旋轉軸 11‧‧‧Rotation axis
12‧‧‧旋轉基座 12‧‧‧Rotating base
13‧‧‧夾持構件 13‧‧‧Clamping member
14‧‧‧驅動裝置 14‧‧‧Drive device
15‧‧‧旋轉數檢測感測器 15‧‧‧Rotation number detection sensor
21‧‧‧第1噴嘴 21‧‧‧Nozzle 1
22‧‧‧第1供給管 22‧‧‧The first supply pipe
23‧‧‧第1閥 23‧‧‧The first valve
24‧‧‧第1流量感測器 24‧‧‧The first flow sensor
25‧‧‧第1液體溫度感測器 25‧‧‧The first liquid temperature sensor
31‧‧‧第2噴嘴 31‧‧‧
32‧‧‧第2供給管 32‧‧‧Second supply pipe
33‧‧‧第2閥 33‧‧‧Second valve
34‧‧‧第2流量感測器 34‧‧‧Second flow sensor
35‧‧‧第2液體溫度感測器 35‧‧‧The second liquid temperature sensor
41‧‧‧第3噴嘴 41‧‧‧
42‧‧‧第3供給管 42‧‧‧3rd supply pipe
43‧‧‧第3閥 43‧‧‧3rd valve
44‧‧‧第3流量感測器 44‧‧‧The third flow sensor
45‧‧‧第3液體溫度感測器 45‧‧‧The third liquid temperature sensor
51‧‧‧第4噴嘴 51‧‧‧
52‧‧‧第4供給管 52‧‧‧4th supply pipe
53‧‧‧第4閥 53‧‧‧4th valve
54‧‧‧第4流量感測器 54‧‧‧Fourth flow sensor
55‧‧‧第4液體溫度感測器 55‧‧‧4th liquid temperature sensor
61‧‧‧第5噴嘴 61‧‧‧Nozzle 5
62‧‧‧第5供給管 62‧‧‧Fifth supply pipe
63‧‧‧第5閥 63‧‧‧Fifth valve
64‧‧‧第5流量感測器 64‧‧‧Fifth Flow Sensor
65‧‧‧第5液體溫度感測器 65‧‧‧The fifth liquid temperature sensor
71‧‧‧腔室內溫度感測器 71‧‧‧Temperature sensor in the chamber
72‧‧‧腔室內壓力感測器 72‧‧‧ Chamber pressure sensor
100‧‧‧異常檢測系統 100‧‧‧Anomaly Detection System
101‧‧‧基板處理裝置 101‧‧‧Substrate processing equipment
102‧‧‧操作裝置(異常檢測裝置) 102‧‧‧Operating device (abnormal detection device)
111‧‧‧第1洗淨處理程序 111‧‧‧The first washing process
112‧‧‧第2洗淨處理程序 112‧‧‧Second washing process
113‧‧‧第3洗淨處理程序 113‧‧‧The third cleaning process
114‧‧‧第4洗淨處理程序 114‧‧‧Fourth Washing Process
115‧‧‧第5洗淨處理程序 115‧‧‧Fifth Washing Process
121‧‧‧顯示部 121‧‧‧Display
122‧‧‧輸入部 122‧‧‧Input part
123‧‧‧記憶部 123‧‧‧Memory Department
124‧‧‧控制部 124‧‧‧Control Department
151‧‧‧第1處理程序 151‧‧‧The first processing program
152‧‧‧第2處理程序 152‧‧‧Second processing program
153‧‧‧第3處理程序 153‧‧‧The third processing program
154‧‧‧第4處理程序 154‧‧‧The fourth processing program
155‧‧‧第5處理程序 155‧‧‧Fifth processing program
601‧‧‧臨限值設定畫面 601‧‧‧Threshold value setting screen
610‧‧‧選項按鈕 610‧‧‧Option button
611‧‧‧第1項目 611‧‧‧Project 1
612‧‧‧第2項目 612‧‧‧
613‧‧‧第3項目 613‧‧‧
614‧‧‧第4項目 614‧‧‧
615‧‧‧第1數值設定欄 615‧‧‧The first value setting column
616‧‧‧第2數值設定欄 616‧‧‧The second value setting column
620‧‧‧「OK」按鈕 620‧‧‧「OK」button
AX‧‧‧旋轉軸線 AX‧‧‧Rotation axis
W‧‧‧基板 W‧‧‧Substrate
圖1係顯示本發明之實施形態1之異常檢測系統之圖。 Fig. 1 is a diagram showing an abnormality detection system according to Embodiment 1 of the present invention.
圖2係顯示本發明之實施形態1之基板處理裝置之構成之圖。 Fig. 2 is a diagram showing the structure of a substrate processing apparatus according to the first embodiment of the present invention.
圖3(a)至(e)係顯示本發明之實施形態1之5種洗淨處理程序之圖。 Figures 3(a) to (e) are diagrams showing five washing processes in the first embodiment of the present invention.
圖4係顯示本發明之實施形態1之操作裝置之構成之圖。 Fig. 4 is a diagram showing the structure of the operating device of the first embodiment of the present invention.
圖5係顯示本發明之實施形態1之操作裝置所執行之前處理之流程之圖。 Fig. 5 is a diagram showing the flow of previous processing executed by the operating device of the first embodiment of the present invention.
圖6係顯示本發明之實施形態1之臨限值設定畫面之圖。 Fig. 6 is a diagram showing the threshold value setting screen in the first embodiment of the present invention.
圖7係顯示本發明之實施形態1之操作裝置所執行之異常檢測處理流程之圖。 Fig. 7 is a diagram showing an abnormality detection processing flow executed by the operating device of the first embodiment of the present invention.
圖8(a)至(e)係顯示本發明之實施形態1之計算出異常度之對象的另一例之圖。 8(a) to (e) are diagrams showing another example of the object for calculating the abnormality degree in the first embodiment of the present invention.
圖9係顯示本發明之實施形態2之異常檢測系統之圖。 Fig. 9 is a diagram showing an abnormality detection system according to
圖10係顯示本發明之實施形態2之基板處理裝置之構成之圖。 Fig. 10 is a diagram showing the structure of a substrate processing apparatus according to
以下,參照圖式而說明本發明之異常檢測裝置及異常 檢測方法之實施形態。然而,本發明並不限定於以下之實施形態。於圖中,對於相同或相當的部分附加相同之參照符號而不對其重複說明。 Hereinafter, embodiments of the abnormality detection device and abnormality detection method of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments. In the figure, the same reference signs are attached to the same or equivalent parts without repetitive description.
圖1係顯示本實施形態之異常檢測系統100之圖。如圖1所示,異常檢測系統100具備基板處理裝置101及操作裝置102。 Fig. 1 is a diagram showing an
基板處理裝置101對於基板W執行既定之處理程序。操作裝置102根據來自作業員之指示,使基板處理裝置101運作。操作裝置102相當於本發明之異常檢測裝置。於本實施形態中,操作裝置102檢測基板處理裝置101之異常。 The
接著參照圖2,對於基板處理裝置101之構成進行說明。圖2係顯示本實施形態之基板處理裝置101之構成之圖。於本實施形態中,基板處理裝置101係一片片地洗淨基板W之單片式之洗淨裝置。此外,於本實施形態中,基板W係半導體晶圓。 Next, referring to FIG. 2, the structure of the
如圖2所示,基板處理裝置101具備:旋轉夾頭(spin chuck)1、SC1供給機構2、SC2供給機構3、HF供給機構4、SPM供給機構5、淋洗(Rinse)液供給機構6、腔室7、腔室內溫度感測器71及腔室內壓力感測器72。本實施形態之基板處理裝置101可對於基板W供給5種藥液(SC1、SC2、HF、SPM及淋洗液)。 As shown in FIG. 2, the
旋轉夾頭1使基板W以旋轉軸11之旋轉軸線AX為中心進行旋轉。詳細而言,旋轉夾頭1具備旋轉軸11、旋轉基座12、複數個夾持構件13、驅動裝置14及旋轉數檢測感測器15。 The rotating chuck 1 rotates the substrate W with the rotation axis AX of the
旋轉軸11支撐旋轉基座12。旋轉基座12典型而言 為圓盤狀之平板。複數個夾持構件13係於旋轉基座12之周緣部隔開間隔而配置。複數個夾持構件13係相互協同運作而夾持1片基板W。具體而言,複數個夾持構件13係以旋轉軸11之旋轉軸線AX通過基板W之中心之方式夾持基板W。 The rotating
驅動裝置14使旋轉軸11以旋轉軸線AX為中心進行旋轉。其結果,基板W以旋轉軸線AX為中心進行旋轉。驅動裝置14典型而言為可控制旋轉數之馬達。 The driving
旋轉數檢測感測器15檢測旋轉軸11之旋轉數。換言之,旋轉數檢測感測器15檢測基板W之旋轉數。旋轉數檢測感測器15輸出顯示所檢測之旋轉數之信號。具體而言,旋轉數檢測感測器15之輸出係隨著時間序列而顯示基板W之旋轉數。換言之,旋轉數檢測感測器15之輸出顯示基板W之旋轉數之變動值。旋轉數檢測感測器15例如可為光學式之旋轉編碼器(rotary encoder)。 The rotation
接著,對於SC1供給機構2、SC2供給機構3、HF供給機構4、SPM供給機構5及淋洗液供給機構6進行說明。然而,SC1供給機構2、SC2供給機構3、HF供給機構4、SPM供給機構5及淋洗液供給機構6之構成大致相同,因此僅對SC1供給機構2之構成詳細地說明,而對於其他藥液供給機構(SC2供給機構3、HF供給機構4、SPM供給機構5及淋洗液供給機構6)之構成僅說明與SC1供給機構2不同之點。 Next, the
SC1供給機構2將藥液SC1供給至旋轉中之基板W。藥液SC1為含有「NH4OH」、「H2O2」及「H2O」之混合液。當將藥液SC1供給至基板W,則附著於基板W之表面之微粒被除去。SC1供給機構2具備第1噴嘴21、第1供給管22、第1閥23、第1流 量感測器24及第1液體溫度感測器25。 The
第1噴嘴21吐出藥液SC1。典型而言,第1噴嘴21為以連續流之狀態吐出藥液SC1之直流噴嘴。第1噴嘴21係以其之吐出口朝向下方之狀態而配置於較旋轉夾頭1之更上方。第1噴嘴21可為固定噴嘴,亦可為掃描噴嘴。具體而言,第1噴嘴21可固定於腔室7內之既定位置,亦可以藥液SC1之著液位置在基板W之表面中央部與基板W之表面周緣部之間移動之方式在腔室7內移動。 The
第1供給管22連接於第1噴嘴21。第1供給管22將藥液SC1供給至第1噴嘴21。第1閥23介設於第1供給管22,而對朝第1噴嘴21之藥液SC1之供給及藥液SC1之供給停止進行切換。 The
第1流量感測器24檢測流動於第1供給管22之藥液SC1之流量。第1流量感測器24輸出顯示所檢測之流量之信號。具體而言,第1流量感測器24之輸出係隨著時間序列而顯示藥液SC1之流量。換言之,第1流量感測器24之輸出顯示藥液SC1之流量之變動值。 The first
第1液體溫度感測器25檢測流動於第1供給管22之藥液SC1之溫度(液溫)。第1液體溫度感測器25輸出顯示所檢測之液溫之信號。具體而言,第1液體溫度感測器25之輸出係隨著時間序列而顯示藥液SC1之液溫。換言之,第1液體溫度感測器25之輸出顯示藥液SC1之液溫之變動值。 The first
SC2供給機構3將藥液SC2供給至旋轉中之基板W。藥液SC2為含有「HCl」、「H2O2」及「H2O」之混合液。當將藥液 SC2供給至基板W,則附著於基板W之表面之重金屬(例如Fe、Ni、Cr、Cu)被除去。SC2供給機構3具備第2噴嘴31、第2供給管32、第2閥33、第2流量感測器34及第2液體溫度感測器35。 The
第2流量感測器34檢測流動於第2供給管32之藥液SC2之流量。第2流量感測器34輸出顯示所檢測之流量之信號。具體而言,第2流量感測器34之輸出係隨著時間序列而顯示藥液SC2之流量。換言之,第2流量感測器34之輸出顯示藥液SC2之流量之變動值。 The second
第2液體溫度感測器35檢測流動於第2供給管32之藥液SC2之溫度(液溫)。第2液體溫度感測器35輸出顯示所檢測之液溫之信號。具體而言,第2液體溫度感測器35之輸出係隨著時間序列而顯示藥液SC2之液溫。換言之,第2液體溫度感測器35之輸出顯示藥液SC2之液溫之變動值。 The second
HF供給機構4將藥液HF(氫氟酸)供給至旋轉中之基板W。當將藥液HF供給至基板W,則形成於基板W之表面之自然氧化膜被除去。HF供給機構4具備第3噴嘴41、第3供給管42、第3閥43、第3流量感測器44及第3液體溫度感測器45。 The
第3流量感測器44檢測流動於第3供給管42之藥液HF之流量。第3流量感測器44輸出顯示所檢測之流量之信號。具體而言,第3流量感測器44之輸出係隨著時間序列而顯示藥液HF之流量。換言之,第3流量感測器44之輸出顯示藥液HF之流量之變動值。 The
第3液體溫度感測器45檢測流動於第3供給管42之藥液HF之溫度(液溫)。第3液體溫度感測器45輸出顯示所檢測之 液溫之信號。具體而言,第3液體溫度感測器45之輸出係隨著時間序列而顯示藥液HF之液溫。換言之,第3液體溫度感測器45之輸出顯示藥液HF之液溫之變動值。 The third
SPM供給機構5將藥液SPM供給至旋轉中之基板W。藥液SPM為含有「H2SO4」及「H2O2」之混合液。當將藥液SPM供給至基板W,則附著於基板W之表面之有機物被除去。具體而言,藥液SPM係用於剝離抗蝕膜。SPM供給機構5具備第4噴嘴51、第4供給管52、第4閥53、第4流量感測器54及第4液體溫度感測器55。 The SPM supply mechanism 5 supplies the chemical liquid SPM to the rotating substrate W. The chemical liquid SPM is a mixed liquid containing "H 2 SO 4 "and "H 2 O 2 ". When the chemical solution SPM is supplied to the substrate W, the organic matter adhering to the surface of the substrate W is removed. Specifically, the chemical solution SPM is used to peel off the resist film. The SPM supply mechanism 5 includes a
第4流量感測器54檢測流動於第4供給管52之藥液SPM之流量。第4流量感測器54輸出顯示所檢測之流量之信號。具體而言,第4流量感測器54之輸出係隨著時間序列而顯示藥液SPM之流量。換言之,第4流量感測器54之輸出顯示藥液SPM之流量之變動值。 The fourth
第4液體溫度感測器55檢測流動於第4供給管52之藥液SPM之溫度(液溫)。第4液體溫度感測器55輸出顯示所檢測之液溫之信號。具體而言,第4液體溫度感測器55之輸出係隨著時間序列而顯示藥液SPM之液溫。換言之,第4液體溫度感測器55之輸出顯示藥液SPM之液溫之變動值。 The fourth
淋洗液供給機構6將淋洗液供給至旋轉中之基板W。具體而言,淋洗液供給機構6於其他藥液(SC1、SC2、HF或SPM)供給至基板W之後,將淋洗液供給至基板W。藉由將淋洗液供給至基板W,而自基板W之表面沖洗其他藥液。淋洗液例如為超純水(去離子水)、碳酸水、電解離子水、氫水、臭氧水、氨水、 或經稀釋之鹽酸水(例如濃度為10ppm至100ppm左右之鹽酸水)。淋洗液供給機構6具備第5噴嘴61、第5供給管62、第5閥63、第5流量感測器64及第5液體溫度感測器65。 The rinsing liquid supply mechanism 6 supplies the rinsing liquid to the rotating substrate W. Specifically, the rinsing liquid supply mechanism 6 supplies the rinsing liquid to the substrate W after other chemical liquids (SC1, SC2, HF, or SPM) are supplied to the substrate W. By supplying the rinse liquid to the substrate W, other chemical liquids are rinsed from the surface of the substrate W. The eluent is, for example, ultrapure water (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). The eluent supply mechanism 6 includes a
第5流量感測器64檢測流動於第5供給管62之淋洗液之流量。第5流量感測器64輸出顯示所檢測之流量之信號。具體而言,第5流量感測器64之輸出係隨著時間序列而顯示淋洗液之流量。換言之,第5流量感測器64之輸出顯示淋洗液之流量之變動值。 The
第5液體溫度感測器65檢測流動於第5供給管62之淋洗液之溫度(液溫)。第5液體溫度感測器65輸出顯示所檢測之液溫之信號。具體而言,第5液體溫度感測器65之輸出係隨著時間序列而顯示淋洗液之液溫。換言之,第5液體溫度感測器65之輸出顯示淋洗液之液溫之變動值。 The fifth
接著,對於腔室7、腔室內溫度感測器71及腔室內壓力感測器72進行說明。腔室7收容旋轉夾頭1及第1噴嘴21至第5噴嘴61。腔室7係藉由間隔壁所區隔之處理室,基板處理裝置101在腔室7內執行基板W之洗淨處理程序。 Next, the
腔室內溫度感測器71檢測腔室7之內部空間之溫度,而輸出顯示所檢測之溫度之信號。具體而言,腔室內溫度感測器71之輸出係隨著時間序列而顯示腔室7之內部空間之溫度。換言之,腔室內溫度感測器71之輸出顯示腔室7之內部空間之溫度之變動值。再者,於以下之說明中,有將腔室7之內部空間之溫度記載為「腔室內溫度」之情況。 The
腔室內壓力感測器72檢測腔室7之內部空間之壓 力,而輸出顯示所檢測之壓力之信號。具體而言,腔室內壓力感測器72之輸出係隨著時間序列而顯示腔室7之內部空間之壓力。換言之,腔室內壓力感測器72之輸出顯示腔室7之內部空間之壓力之變動值。再者,於以下之說明中,有將腔室7之內部空間之壓力記載為「腔室內壓力」之情況。 The
於本實施形態中,參照圖1而說明之操作裝置102監視參照圖2而說明之「基板W之旋轉數」、「SC1之流量」、「SC1之液溫」、「SC2之流量」、「SC2之液溫」、「HF之流量」、「HF之液溫」、「SPM之流量」、「SPM之液溫」、「淋洗液之流量」、「淋洗液之液溫」、「腔室內溫度」及「腔室內壓力」。操作裝置102根據自該等監視對象獲得之變動值而檢測基板處理裝置101之異常。具體而言,根據圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第2流量感測器34、第2液體溫度感測器35、第3流量感測器44、第3液體溫度感測器45、第4流量感測器54、第4液體溫度感測器55、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72(以下有記載為「各感測器」之情況)之輸出(變動值),而檢測基板處理裝置101之異常。 In this embodiment, the operating
接著,參照圖3(a)至圖3(e),對於基板處理裝置101可執行之洗淨處理程序進行說明。本實施形態之基板處理裝置101可執行5種洗淨處理程序。 Next, referring to FIGS. 3(a) to 3(e), the cleaning processing program executable by the
圖3(a)至圖3(e)係顯示本實施形態之5種洗淨處理程序之圖。詳細而言,圖3(a)顯示第1洗淨處理程序111之步驟,圖3(b)顯示第2洗淨處理程序112之步驟,圖3(c)顯示第3洗淨處理 程序113之步驟,圖3(d)顯示第4洗淨處理程序114之步驟,圖3(e)顯示第5洗淨處理程序115之步驟。 Fig. 3(a) to Fig. 3(e) are diagrams showing five washing treatment procedures of this embodiment. In detail, FIG. 3(a) shows the steps of the first
具體而言,圖3(a)至圖3(e)係隨著時間序列而顯示將複數種藥液供給至基板W之順序。例如,如圖3(a)所示,執行第1洗淨處理程序111之基板處理裝置101係以「SC1」、「淋洗液」、「SC2」、「淋洗液」之順序將各藥液供給至基板W。同樣地,執行第2洗淨處理程序112之基板處理裝置101係以圖3(b)所示之順序將各藥液供給至基板W。執行第3洗淨處理程序113之基板處理裝置101係以圖3(c)所示之順序將各藥液供給至基板W。執行第4洗淨處理程序114之基板處理裝置101係以圖3(d)所示之順序將各藥液供給至基板W。執行第5洗淨處理程序115之基板處理裝置101係以圖3(e)所示之順序將各藥液供給至基板W。 Specifically, FIGS. 3(a) to 3(e) show the sequence of supplying a plurality of chemical liquids to the substrate W in a time series. For example, as shown in FIG. 3(a), the
此外,如圖3(a)至圖3(e)所示,第1洗淨處理程序111至第5洗淨處理程序115之最後之步驟皆為乾燥步驟。乾燥步驟係使基板W乾燥之步驟。典型而言,於乾燥步驟中,基板處理裝置101執行旋轉乾燥處理。具體而言,基板處理裝置101使基板W之旋轉速度較藥液供給時更為增加。其結果,對附著於基板W之淋洗液作用有較大之離心力,而將淋洗液甩離至基板W之周圍。從而,藉由執行旋轉乾燥處理,自基板W除去淋洗液而使基板W乾燥。 In addition, as shown in FIGS. 3(a) to 3(e), the last steps of the first
於本實施形態中,參照圖1而說明之操作裝置102檢測第1洗淨處理程序111至第5洗淨處理程序115之每個程序之異常。換言之,操作裝置102檢測異常之對象為第1洗淨處理程序111至第5洗淨處理程序115之各處理程序。 In this embodiment, the operating
接著,參照圖1至圖4而對於操作裝置102之構成進 行說明。圖4係顯示操作裝置102之構成之圖。如圖4所示,操作裝置102具備顯示部121、輸入部122、記憶部123及控制部124。 Next, the configuration of the
顯示部121顯示各種畫面。顯示部121典型而言為如液晶顯示裝置或有機EL(electroluminescence,電致發光)顯示裝置般之顯示裝置。於本實施形態中,當在第1洗淨處理程序111至第5洗淨處理程序115中之任一洗淨處理程序之執行中檢測到異常,顯示部121顯示警報畫面。警報畫面包含將產生異常之情形通知作業員之訊息。 The
輸入部122為供作業員操作之使用者介面裝置。輸入部122將與作業員之操作對應之指示(控制信號)輸入至控制部124。此外,輸入部122將與作業員之操作對應之資料輸入至控制部124。典型而言,輸入部122具有鍵盤及滑鼠。再者,輸入部122亦可具有觸控感測器。觸控感測器係重疊於顯示部121之顯示面,而產生顯示作業員對於顯示面之觸控操作之信號。作業員可藉由觸控操作而對操作裝置102輸入各種指示。 The
於本實施形態中,作業員可操作輸入部122而對顯示於顯示部121之畫面之輸入欄輸入(登錄或設定)各種資訊。此外,作業員可操作輸入部122而使基板處理裝置101執行第1洗淨處理程序111至第5洗淨處理程序115中之1個洗淨處理程序。 In this embodiment, the operator can operate the
記憶部123例如由HDD(Hard Disk Drive,硬碟驅動器)、RAM(Random Access Memory,隨機存取記憶體)及ROM(Read Only Memory,唯讀記憶體)所構成。記憶部123記憶有與第1洗淨處理程序111至第5洗淨處理程序115之各者對應之配方。各配方表示用於使基板處理裝置101運作之必要資訊。具體而言,第1洗 淨處理程序111之配方表示參照圖3(a)而說明之步驟。同樣地,第2洗淨處理程序112至第5洗淨處理程序115之配方表示參照圖3(b)至圖3(e)而說明之步驟。 The
進而,記憶部123記憶自參照圖1及圖2而說明之複數個監視對象獲得之變動值之統計性的基準範圍。具體而言,記憶部123記憶有第1洗淨處理程序111至第5洗淨處理程序115之每個之基準範圍。此外,記憶部123記憶有控制程式及各種畫面之配置資訊等。 Furthermore, the
控制部124係由例如CPU(Central Processing Unit,中央處理單元)或MPU(Micro Processing Unit,微處理單元)般之運算電路構成。控制部124根據記憶於記憶部123之控制程式(電腦程式)而控制操作裝置102之各部分之動作。進而,控制部124控制基板處理裝置101。具體而言,控制部124依據來自作業員之指示而使基板處理裝置101執行第1洗淨處理程序111至第5洗淨處理程序115中之任一洗淨處理程序。於使基板處理裝置101執行洗淨處理程序時,控制部124參照與執行之洗淨處理程序對應之配方。 The
於本實施形態中,控制部124判定可否執行第1洗淨處理程序111至第5洗淨處理程序115之各者。具體而言,當在洗淨處理程序之執行中檢測到異常,控制部124中止(停止)洗淨處理程序。進而,控制部124決定不許可已中止之洗淨處理程序之執行,並使顯示部121顯示警報畫面。警報畫面包含對作業員通知禁止已中止之洗淨處理程序之執行之訊息。 In this embodiment, the
詳細而言,控制部124自參照圖2而說明之複數個監視對象取得變動值。具體而言,表示各監視對象之變動值之信號自 參照圖2而說明之各感測器輸入至控制部124。於本實施形態中,控制部124根據參照圖2而說明之各感測器之輸出,以產生參照圖2而說明之各變動值之時間序列資料。換言之,控制部124產生多變量資料群。例如,控制部124係於每隔既定之時間間隔而自各感測器之輸出擷取變動值,藉此產生時間序列資料。或是,控制部124係於每隔既定之時間間隔而計算出各感測器之輸出(變動值)之平均值、微分值、或積分值,藉此產生時間序列資料。 In detail, the
進而,控制部124根據記憶部123記憶之基準範圍而計算出自圖2所示之各感測器之輸出取得之變動值(多變量資料群)之統計性的異常度。具體而言,控制部124藉由統計性的方法而計算出異常度。異常度表示多變量資料群之統計量是否自基準範圍離開。控制部124參照計算出之異常度而檢測是否產生異常。典型而言,異常度表示距多變量資料群之原點之距離。 Furthermore, the
更詳細而言,控制部124對第1洗淨處理程序111至第5洗淨處理程序115之每個而計算出異常度,藉由計算出之異常度是否超過預先設定之臨限值而判定可否執行第1洗淨處理程序111至第5洗淨處理程序115之各者。以下,有將對於異常度之臨限值記載為「第1臨限值」之情況。第1臨限值係被記憶於記憶部123。 In more detail, the
於本實施形態中,控制部124根據使用之藥液之不同而監視於第1洗淨處理程序111至第5洗淨處理程序115之每個中不同之監視對象。 In this embodiment, the
接著,參照圖1至圖4,對於第1洗淨處理程序111至第5洗淨處理程序115之監視對象而具體地進行說明。 Next, referring to FIGS. 1 to 4, the monitoring targets of the first
於執行圖3(a)所示之第1洗淨處理程序111時,控制部124自圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第2流量感測器34、第2液體溫度感測器35、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72之輸出取得變動值。即,於執行第1洗淨處理程序111時,依據圖3(a)所示之步驟,將顯示基板W之旋轉數、SC1之流量、SC1之液溫、SC2之流量、SC2之液溫、淋洗液之流量、淋洗液之液溫、腔室內溫度及腔室內壓力之各者之變動值之信號輸入至控制部124。進而,控制部124根據各變動值而產生多變量資料群,並根據第1洗淨處理程序111之基準範圍而計算出多變量資料群(以下記載為「第1多變量資料群」)之統計性的異常度。 When executing the first
同樣地,於執行圖3(b)所示之第2洗淨處理程序112時,控制部124自圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第2流量感測器34、第2液體溫度感測器35、第3流量感測器44、第3液體溫度感測器45、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72之輸出取得變動值。即,於執行第2洗淨處理程序112時,依據圖3(b)所示之步驟,將顯示基板W之旋轉數、SC1之流量、SC1之液溫、SC2之流量、SC2之液溫、HF之流量、HF之液溫、淋洗液之流量、淋洗液之液溫、腔室內溫度及腔室內壓力之各者之變動值之信號輸入至控制部124。進而,控制部124根據各變動值而產生多變量資料群,並根據第2洗淨處理程序112之基準範圍而計算出多變量資料群(以下記載為「第2多變量資料 群」)之統計性的異常度。 Similarly, when the second
此外,於執行圖3(c)所示之第3洗淨處理程序113時,控制部124自圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第2流量感測器34、第2液體溫度感測器35、第3流量感測器44、第3液體溫度感測器45、第4流量感測器54、第4液體溫度感測器55、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72之輸出取得變動值。即,於執行第3洗淨處理程序113時,依據圖3(c)所示之步驟,將顯示基板W之旋轉數、SC1之流量、SC1之液溫、SC2之流量、SC2之液溫、HF之流量、HF之液溫、SPM之流量、SPM之液溫、淋洗液之流量、淋洗液之液溫、腔室內溫度及腔室內壓力之各者之變動值之信號輸入至控制部124。進而,控制部124根據各變動值而產生多變量資料群,並根據第3洗淨處理程序113之基準範圍而計算出多變量資料群(以下記載為「第3多變量資料群」)之統計性的異常度。 In addition, when the third
此外,於執行圖3(d)所示之第4洗淨處理程序114時,控制部124自圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第2流量感測器34、第2液體溫度感測器35、第3流量感測器44、第3液體溫度感測器45、第4流量感測器54、第4液體溫度感測器55、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72之輸出取得變動值。即,於執行第4洗淨處理程序114時,依據圖3(d)所示之步驟,將顯示基板W之旋轉數、SC1之流量、SC1之液溫、SC2之流量、SC2之液溫、HF之流量、HF之液溫、SPM 之流量、SPM之液溫、淋洗液之流量、淋洗液之液溫、腔室內溫度及腔室內壓力之各者之變動值之信號輸入至控制部124。進而,控制部124根據各變動值而產生多變量資料群,並根據第4洗淨處理程序114之基準範圍而計算出多變量資料群(以下記載為「第4多變量資料群」)之統計性的異常度。 In addition, when the fourth
此外,於執行圖3(e)所示之第5洗淨處理程序115時,控制部124自圖2所示之旋轉數檢測感測器15、第1流量感測器24、第1液體溫度感測器25、第4流量感測器54、第4液體溫度感測器55、第5流量感測器64、第5液體溫度感測器65、腔室內溫度感測器71及腔室內壓力感測器72之輸出取得變動值。即,於執行第5洗淨處理程序115時,依據圖3(e)所示之步驟,將顯示基板W之旋轉數、SC1之流量、SC1之液溫、SPM之流量、SPM之液溫、淋洗液之流量、淋洗液之液溫、腔室內溫度及腔室內壓力之各者之變動值之信號輸入至控制部124。進而,控制部124根據各變動值而產生多變量資料群,並根據第5洗淨處理程序115之基準範圍而計算出多變量資料群(以下記載為「第5多變量資料群」)之統計性的異常度。 In addition, when the fifth
接著,參照圖1至圖4而對於第1洗淨處理程序111至第5洗淨處理程序115之基準範圍具體地進行說明。控制部124藉由使正常運作之基板處理裝置101執行第1洗淨處理程序111至第5洗淨處理程序115,而取得(計算出)第1洗淨處理程序111至第5洗淨處理程序115之基準範圍。 Next, referring to FIGS. 1 to 4, the reference range of the first
詳細而言,控制部124藉由使正常運作之基板處理裝置101執行第1洗淨處理程序111,而產生作為基準之第1多變量 資料群。進而,控制部124藉由統計性之方法而計算出作為基準之第1多變量資料群分布之範圍,以作為第1洗淨處理程序111之基準範圍。 In detail, the
同樣地,控制部124藉由使正常運作之基板處理裝置101執行第2洗淨處理程序112至第5洗淨處理程序115,而產生作為基準之第2多變量資料群至第5多變量資料群。進而,控制部124藉由統計性之方法而計算出作為基準之第2多變量資料群至第5多變量資料群之各者分布之範圍,以作為第2洗淨處理程序112至第5洗淨處理程序115之各者之基準範圍。 Similarly, the
接著,參照圖1至圖4,對於操作裝置102進而說明。控制部124根據在執行洗淨處理程序中取得之多變量資料群,特定出使異常度增加之監視對象。詳細而言,控制部124計算出自各監視對象之變動值取得之時間序列資料之SN比。當因異常度超過第1臨限值而檢測到異常時,控制部124參照檢測到異常時之SN比之資料群而自各監視對象之SN比中判定超過預先設定之臨限值之SN比。以下,有將對於SN比之臨限值記載為「第2臨限值」之情況。第2臨限值係被記憶於記憶部123。由於SN比超過第2臨限值之監視對象有可能使異常度增加,因而控制部124特定出SN比超過第2臨限值之監視對象而作為使異常度增加之監視對象。 Next, referring to FIG. 1 to FIG. 4, the
接著,參照圖1至圖7,對於基板處理裝置101及操作裝置102進而說明。圖5係顯示操作裝置102所執行之前處理之流程之圖。圖6係顯示本實施形態之臨限值設定畫面601之圖。 Next, referring to FIGS. 1 to 7, the
藉由作業員操作輸入部122而選擇前處理之執行,以使圖5所示之前處理開始。作業員於選擇前處理之執行後操作輸入 部122而自第1洗淨處理程序111至第5洗淨處理程序115中選擇使基板處理裝置101執行之洗淨處理程序(步驟S501)。此外,作業員於選擇使基板處理裝置101執行之洗淨處理程序後,操作輸入部122而指示執行所選擇之洗淨處理程序。此時,作業員指定處理對象之基板W之片數(例如100片)。 The operator selects the execution of the pre-processing by operating the
當作業員指示洗淨處理程序之執行,控制部124取得作業員所選擇之洗淨處理程序之基準範圍(步驟S502)。詳細而言,控制部124使基板處理裝置101執行作業員所選擇之洗淨處理程序。進而,控制部124根據與執行中之洗淨處理程序(作業員所選擇之洗淨處理程序)對應之各感測器之輸出,而產生作為基準之多變量資料群。其結果,於記憶部123記憶有所指定之基板W之片數量之多變量資料群。當對於所指定之片數之基板W之洗淨處理程序結束,控制部124根據記憶於記憶部123之多變量資料群而計算出作業員所選擇之洗淨處理程序之基準範圍。 When the operator instructs the execution of the cleaning processing program, the
更詳細而言,於本實施形態中,控制部124根據多維之統計性的方法即異常檢測法或離群值檢測法而取得基準範圍。具體而言,控制部124藉由作為異常檢測法或離群值檢測法之一例之馬哈朗諾比斯-田口系統(Mahalanobis-Taguchi System)之MT法(Mahalanobis-Taguchi method,馬哈朗諾比斯-田口方法)、或MTA法(Mahalanobis-Taguchi Adjoint method,馬哈朗諾比斯-田口伴隨方法)而計算出單位空間(馬哈朗諾比斯空間)作為基準範圍。具體而言,產生顯示相關係數矩陣之反矩陣、或變異數-共變異數矩陣之餘因子矩陣之資料而作為單位空間。當取得單位空間,控制部124使顯示部121顯示圖6所示之臨限值設定畫面601(步驟S503)。 In more detail, in this embodiment, the
如圖6所示,臨限值設定畫面601顯示選項按鈕(Radio Button)610、第1數值設定欄615、第2數值設定欄616及「OK」按鈕620。臨限值設定畫面601係用於設定對於在圖5所示之步驟S501中作業員所選擇之洗淨處理程序(以下,有記載為「選擇洗淨處理」之情況)之第1臨限值之畫面。具體而言,本實施形態之臨限值設定畫面601係用於設定馬哈朗諾比斯距離之臨限值之畫面。「OK」按鈕620係用於確定登錄在臨限值設定畫面601之資訊之按鈕,當作業員操作輸入部122而輸入按下「OK」按鈕620之指示時,確定登錄於臨限值設定畫面601之資訊,結束圖5所示之處理。 As shown in FIG. 6, the threshold
選項按鈕610包含第1項目611至第4項目614。作業員可操作輸入部122而選擇第1項目611至第4項目614中之一者。 The
於作業員選擇第3項目613或第4項目614之情況下,被許可對第1數值設定欄615或第2數值設定欄616輸入數值。第1數值設定欄615係用於將x2值之顯著水準設定為任意值之設定欄。第2數值設定欄616係用於將對於選擇洗淨處理之異常度(馬哈朗諾比斯距離)之臨限值(第1臨限值)設定為任意值之設定欄。於選擇第3項目613或第4項目614之情況下,作業員操作輸入部122而將任意值輸入至第1數值設定欄615或第2數值設定欄616。 When the operator selects the
在第1項目611被選擇之狀態下,於作業員輸入按下「OK」按鈕620之指示之情況,控制部124產生顯示在求取選擇洗淨處理之單位空間時所使用之多變量資料群之x2分布之資料。控制部124設定x2值之顯著水準成為5%之值而作為對於選擇洗淨處理之異常度之臨限值(第1臨限值)。 In the state where the
在第2項目612被選擇之狀態下,於作業員輸入按下「OK」按鈕620之指示之情況,控制部124產生顯示在求取選擇洗淨處理之單位空間時所使用之多變量資料群之x2分布之資料。控制部124設定x2值之顯著水準成為1%之值而作為對於選擇洗淨處理之異常度之臨限值(第1臨限值)。 In the state where the
在第3項目613被選擇之狀態下,於作業員輸入按下「OK」按鈕620之指示之情況,控制部124產生顯示在求取選擇洗淨處理之單位空間時所使用之多變量資料群之x2分布之資料。控制部124設定x2值之顯著水準成為第1數值設定欄615之輸入值之值而作為對於選擇洗淨處理之異常度之臨限值(第1臨限值)。 In the state where the
在第4項目614被選擇之狀態下,於作業員輸入按下「OK」按鈕620之指示之情況,控制部124設定第2數值設定欄616之輸入值而作為對於選擇洗淨處理之異常度之臨限值(第1臨限值)。 In the state where the
以上,參照圖5及圖6,對於控制部124執行之前處理進行說明。作業員使操作裝置102執行圖5所示之前處理直至第1洗淨處理程序111至第5洗淨處理程序115之各者之單位空間(基準範圍)及第1臨限值記憶於記憶部123為止。 Above, with reference to FIGS. 5 and 6, the previous processing performed by the
接著,參照圖1至圖7,對於操作裝置102執行之異常檢測處理進行說明。圖7係顯示操作裝置102執行之異常檢測處理之流程之圖。 Next, referring to FIGS. 1 to 7, the abnormality detection processing executed by the operating
圖7所示之異常檢測處理係藉由作業員操作輸入部122並選擇異常檢測處理之執行而開始。於選擇異常檢測處理之執行後,作業員操作輸入部122而自第1洗淨處理程序111至第5洗 淨處理程序115中選擇使基板處理裝置101執行之洗淨處理程序(步驟S511)。此外,於選擇使基板處理裝置101執行之洗淨處理程序後,作業員操作輸入部122而指示執行所選擇之洗淨處理程序。此時,作業員指定處理對象之基板W之片數。 The abnormality detection processing shown in FIG. 7 is started by the operator operating the
當作業員指示執行洗淨處理程序,控制部124重複進行步驟S512至步驟S514之處理,直至對於作業員所指定之片數之基板W之洗淨處理程序結束為止。 When the operator instructs to execute the cleaning processing program, the
詳細而言,控制部124使基板處理裝置101執行作業員所選擇之洗淨處理程序。進而,控制部124根據與執行中之洗淨處理程序(作業員所選擇之洗淨處理程序)對應之各感測器之輸出,而產生多變量資料群。進而,控制部124根據執行中之洗淨處理程序之單位空間,而計算出馬哈朗諾比斯距離MD而作為執行中之洗淨處理程序之異常度(步驟S512)。 Specifically, the
當計算出馬哈朗諾比斯距離MD,控制部124判定馬哈朗諾比斯距離MD是否超過圖6所示之臨限值設定畫面601中設定之第1臨限值(步驟S513)。 When the Mahalanobis distance MD is calculated, the
於判定為馬哈朗諾比斯距離MD未超過第1臨限值之情況(步驟S513之No),控制部124判定對於作業員所指定之片數之基板W之洗淨處理程序是否結束(步驟S514)。 When it is determined that the Mahalanobis distance MD does not exceed the first threshold value (No in step S513), the
當判定為對於作業員所指定之片數之基板W之洗淨處理程序未結束(步驟S514之No),控制部124返回步驟S512而重複進行步驟S512至步驟S514之處理。 When it is determined that the cleaning processing program for the number of substrates W designated by the operator has not ended (No in step S514), the
當判定為對於作業員所指定之片數之基板W之洗淨處理程序結束(步驟S514之Yes),控制部124結束異常檢測處理。 When it is determined that the cleaning processing program for the number of substrates W designated by the operator has ended (Yes in step S514), the
此外,於判定為馬哈朗諾比斯距離MD超過第1臨限值之情況(步驟S513之Yes),控制部124中止(停止)洗淨處理程序。進而,控制部124決定不許可已中止之洗淨處理程序之執行,而使顯示部121顯示警報畫面(步驟S515)。警報畫面包含對作業員通知禁止執行已中止之洗淨處理程序之訊息。 In addition, when it is determined that the Mahalanobis distance MD exceeds the first threshold value (Yes in step S513), the
進而,於中止洗淨處理程序後,控制部124特定出使馬哈朗諾比斯距離MD增加之監視對象(步驟S516)。具體而言,控制部124參照馬哈朗諾比斯距離MD超過第1臨限值時(檢測到異常時)之SN比之資料群而特定出SN比超過第2臨限值之監視對象,以作為使馬哈朗諾比斯距離MD增加之監視對象。進而,控制部124將對作業員通知特定之監視對象之畫面顯示於顯示部121,而結束異常檢測處理。 Furthermore, after the washing process program is terminated, the
再者,較佳為,於計算出馬哈朗諾比斯距離MD(異常度)時,根據構成多變量資料群之成員之增加而提升自感測器之輸出獲得之時間序列資料之解析度。藉由提昇解析度,而可更正確地進行異常之檢測。亦可為,例如,於每隔既定之時間間隔而自感測器之輸出擷取變動值之情況下,成員數較少之期間使擷取變動值之時間(時間點)之間隔較廣,而根據成員數之增加,使擷取變動值之時間(時間點)之間隔逐漸變窄。且亦可為,於每隔既定之時間間隔而計算出各感測器之輸出(變動值)之平均值、微分值、或積分值之情況下亦同樣地,成員數較少之期間使求取平均值、微分值、或積分值之時間(時間點)之間隔較廣,而根據成員數之增加,使求取平均值、微分值、或積分值之時間(時間點)之間隔逐漸變窄。 Furthermore, it is preferable that when the Mahalanobis distance MD (abnormality) is calculated, the resolution of the time series data obtained from the output of the sensor is increased according to the increase of the members constituting the multivariate data group. By improving the resolution, anomalies can be detected more accurately. It can also be that, for example, in the case where the change value is captured from the output of the sensor at a predetermined time interval, a period with a small number of members makes the time (time point) for capturing the change value wider. According to the increase in the number of members, the interval of the time (time point) for capturing the change value is gradually narrowed. Also, in the case where the average, differential, or integral value of the output (variation value) of each sensor is calculated every predetermined time interval, the same applies to the period when the number of members is small. The interval of time (time points) for taking the average value, differential value, or integral value is wide, and according to the increase in the number of members, the interval of time (time point) for obtaining the average value, differential value, or integral value gradually changes narrow.
以上,對於實施形態1進行說明。根據本實施形態, 由於不需要對每個監視對象(參數)設定用以檢測處理程序之異常之臨限值(第1臨限值),因而可使第1型誤差減少。此外,根據自複數個監視對象取得之變動值(參數值)之統計性的異常度而檢測處理程序之異常,藉此可使第2型誤差減少。因此,可使誤檢測異常之可能性降低。 Above, the first embodiment has been described. According to this embodiment, since it is not necessary to set the threshold value (first threshold value) for detecting abnormality of the processing program for each monitored object (parameter), the first type error can be reduced. In addition, the abnormality of the processing program is detected based on the statistical abnormality of the variation values (parameter values) obtained from a plurality of monitoring objects, thereby reducing the
進而,根據本實施形態而判定可否執行複數個洗淨處理程序(圖3(a)至圖3(e)所示之第1洗淨處理程序111至第5洗淨處理程序115)之各者,因此即便決定不許可某洗淨處理程序之執行,仍可執行其他洗淨處理程序。因此,可提升基板處理裝置101之運轉率。 Furthermore, according to this embodiment, it is determined whether each of a plurality of washing processing programs (the first
再者,亦可為,於決定不許可某洗淨處理程序之執行之情況下,在作業員選擇洗淨處理程序時(圖7之步驟S511),控制部124將對作業員通知不許可執行之洗淨處理程序之畫面顯示於顯示部121。 Furthermore, in the case of deciding not to permit the execution of a certain cleaning processing program, when the operator selects the cleaning processing program (step S511 in FIG. 7), the
此外,在本實施形態中,已對於基板處理裝置101執行圖3(a)至圖3(e)所示之5種洗淨處理程序(第1洗淨處理程序111至第5洗淨處理程序115)之構成進行說明,但只要基板處理裝置101執行之洗淨處理程序之種類為2種以上即可。 In addition, in this embodiment, the
此外,在本實施形態中,於圖7所示之異常檢測處理,在將警報畫面顯示於顯示部121之步驟(步驟S515)之後執行特定出使馬哈朗諾比斯距離MD增加之監視對象之步驟(步驟S516),但可交換步驟S515與步驟S516之順序。 In addition, in the present embodiment, the abnormality detection process shown in FIG. 7 is executed after the step of displaying the alarm screen on the display unit 121 (step S515) to specify the monitoring target that increases the Mahalanobis distance MD (Step S516), but the order of Step S515 and Step S516 can be exchanged.
此外,在本實施形態中,判定可否執行第1洗淨處理程序111至第5洗淨處理程序115之各者,但判定可否執行之對象 (處理程序)可任意地設定。換言之,可任意地設定計算出異常度之對象(處理程序)。具體而言,可任意地設定為了計算出異常度而生成之多變量資料群。 In addition, in the present embodiment, it is determined whether each of the first
例如,亦可為,於檢測如圖3(c)所示之第3洗淨處理程序113之異常時,產生與圖3(b)所示之第2洗淨處理程序112對應之多變量資料群(第2多變量資料群)。由於圖3(c)所示之第3洗淨處理程序113之步驟包含圖3(b)所示之第2洗淨處理程序112之步驟,因此根據第2多變量資料群而計算出異常度,藉此可檢測第3洗淨處理程序113之異常。 For example, when detecting an abnormality in the third
此外,亦可為,例如將自第1洗淨處理程序111至第5洗淨處理程序115之各者除去乾燥步驟(最後之步驟)之各處理程序作為計算出異常度之對象。 In addition, for example, each of the first
此外,亦可為,例如將圖8(a)至圖8(e)所示之第1處理程序151至第5處理程序155作為計算出異常度之對象。圖8(a)至圖8(e)係顯示計算出異常度之對象之其他例之圖。詳細而言,如圖8(a)所示,第1處理程序151為依據「SC1」、「淋洗液」之順序將各藥液供給至基板W之處理程序。同樣地,第2處理程序152至第4處理程序154為以圖8(b)至圖8(d)所示之順序將各藥液供給至基板W之處理程序。第5處理程序155係於將「淋洗液」供給至基板W之後使基板W乾燥之處理程序。 In addition, for example, the
例如,於在執行第1處理程序151時檢測到異常之情況下,控制部124決定不許可包含第1處理程序151之洗淨處理程序之執行(禁止執行)。具體而言,由於圖3(a)至圖3(e)所示之第1洗淨處理程序111至第5洗淨處理程序115皆包含圖8(a)所示之第 1處理程序151,因而於在執行第1處理程序151時檢測到異常之情況下,第1洗淨處理程序111至第5洗淨處理程序115之全部被禁止執行。 For example, when an abnormality is detected when the
接著,參照圖3至圖10而對於本發明之實施形態2進行說明。然而,僅對於與實施形態1不同之事項加以說明,而對於與實施形態1相同之事項省略說明。實施形態2係在基板處理裝置101具備複數個腔室之點上與實施形態1不同。實施形態2之基板處理裝置101係在各腔室內執行不同之洗淨處理程序。 Next, the second embodiment of the present invention will be described with reference to FIGS. 3 to 10. However, only the matters different from the first embodiment will be described, and the description of the same matters as the first embodiment will be omitted. The second embodiment is different from the first embodiment in that the
圖9係顯示本實施形態之異常檢測系統100之圖。如圖9所示,本實施形態之基板處理裝置101具備第1腔室7a至第5腔室7e。此外,本實施形態之基板處理裝置101係於第1腔室7a至第5腔室7e之每個中具備腔室內溫度感測器71及腔室內壓力感測器72。 FIG. 9 is a diagram showing the
基板處理裝置101係於第1腔室7a中執行第1洗淨處理程序111。同樣地,基板處理裝置101係於第2腔室7b至第5腔室7e中執行第2洗淨處理程序112至第5洗淨處理程序115。 The
基板處理裝置101係將基板W搬送至第1腔室7a至第5腔室7e中之1個腔室內。基板W被搬送至之腔室係與作業員操作操作裝置102之輸入部122(參照圖4)而自第1洗淨處理程序111至第5洗淨處理程序115中選擇之洗淨處理程序對應。 The
圖10係顯示本實施形態之基板處理裝置101之構成之圖。如圖10所示,第1腔室7a收容第1噴嘴21、第2噴嘴31 及第5噴嘴61。第2腔室7b收容第1噴嘴21、第2噴嘴31、第3噴嘴41及第5噴嘴61。第3腔室7c收容第1噴嘴21、第2噴嘴31、第3噴嘴41、第4噴嘴51及第5噴嘴61。第4腔室7d收容第1噴嘴21、第2噴嘴31、第3噴嘴41、第4噴嘴51及第5噴嘴61。第5腔室7e收容第1噴嘴21、第3噴嘴41及第5噴嘴61。再者,雖未圖示,但第1腔室7a至第5腔室7e係分別收容有參照圖2而說明之旋轉夾頭1。 FIG. 10 is a diagram showing the structure of the
實施形態2之操作裝置102(控制部124)係與實施形態1之操作裝置102同樣地,計算出預先設定之複數個處理程序(例如第1洗淨處理程序111至第5洗淨處理程序115)之各自之異常度,而判定可否執行預先設定之複數個處理程序之各者。例如,於判定可否執行之對象為第1洗淨處理程序111至第5洗淨處理程序115,且第1洗淨處理程序111之異常度超過對應之第1臨限值之情況下,操作裝置102決定不許可第1洗淨處理程序111之執行。具體而言,操作裝置102決定不許可基板W朝第1腔室7a之搬送。 The operating device 102 (control unit 124) of the second embodiment is the same as the
以上,已對於實施形態2進行說明。根據實施形態2,與實施形態1同樣地,由於不需要對每個監視對象(參數)設定用以檢測處理程序之異常之臨限值(第1臨限值),因而可使第1型誤差減少。此外,根據自複數個監視對象取得之變動值(參數值)之統計性的異常度而檢測處理程序之異常,藉此可使第2型誤差減少。因此,可使誤檢測異常之可能性降低。 The second embodiment has been described above. According to the second embodiment, as in the first embodiment, since there is no need to set the threshold value (the first threshold value) for detecting abnormality of the processing program for each monitored object (parameter), the first type error can be made cut back. In addition, the abnormality of the processing program is detected based on the statistical abnormality of the variation values (parameter values) obtained from a plurality of monitoring objects, thereby reducing the
進而,根據實施形態2而判定可否執行複數個洗淨處理程序之各者,因此即便決定不許可某洗淨處理程序之執行,仍可執行其他洗淨處理程序。具體而言,即便決定不許可第1洗淨處理 程序111之執行,仍可執行第2洗淨處理程序112至第5洗淨處理程序115。換言之,即便基板W朝第1腔室7a之搬入被禁止,仍可將基板W搬入至第2腔室7b至第5腔室7e。因此,可提升基板處理裝置101之運轉率。 Furthermore, according to the second embodiment, it is determined whether each of a plurality of washing processing programs can be executed. Therefore, even if it is determined not to permit execution of a certain washing processing program, other washing processing programs can still be executed. Specifically, even if it is determined that the execution of the first
再者,在本實施形態中,已說明於第1腔室7a至第5腔室7e中執行第1洗淨處理程序111至第5洗淨處理程序115之基板處理裝置101,而作為於複數個腔室內執行不同之處理之基板處理裝置101之一例,但基板處理裝置101執行之複數個處理程序並不特別限定。例如,基板處理裝置101可具備執行對半導體晶圓之蝕刻處理程序之腔室、執行自半導體晶圓剝離抗蝕劑膜之剝離處理程序之腔室及執行洗淨半導體晶圓之洗淨處理程序之腔室。 Furthermore, in the present embodiment, the
以上,已參照圖式並對於本發明之實施形態進行說明。然而,本發明並不限定於上述實施形態,在不脫離其主旨之範圍內,可於各種態樣中施行本發明。 Above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiment, and the present invention can be implemented in various aspects without departing from the scope thereof.
例如,在本發明之實施形態中,根據異常度是否超過第1臨限值而檢測異常,但亦可根據異常度是否超過基準範圍而檢測異常。例如,於計算出馬哈朗諾比斯距離作為異常度之情況下,亦可為,根據馬哈朗諾比斯距離之值是否超過「1」,換言之,根據馬哈朗諾比斯距離是否超過單位空間,而檢測異常。具體而言,亦可為,於馬哈朗諾比斯距離之值超過「1」之情況下,檢測到異常。 For example, in the embodiment of the present invention, the abnormality is detected based on whether the abnormality degree exceeds the first threshold value, but the abnormality may be detected based on whether the abnormality degree exceeds the reference range. For example, when the Mahalanobis distance is calculated as the anomaly degree, it can also be based on whether the value of the Mahalanobis distance exceeds "1", in other words, whether the Mahalanobis distance exceeds Unit space, while detecting anomalies. Specifically, it may be that when the value of the Mahalanobis distance exceeds "1", an abnormality is detected.
此外,在本發明之實施形態中,已對於夾持基板W之夾持式之夾頭進行說明,而作為保持基板W之構成,但亦可採用真空式之夾頭而作為保持基板W之構成。 In addition, in the embodiment of the present invention, the clamp-type chuck that clamps the substrate W has been described as the structure for holding the substrate W, but a vacuum-type chuck may also be used as the structure for holding the substrate W. .
此外,在本發明之實施形態中,藉由顯示部121顯示 警報畫面而對作業員通知警報,但警報亦可藉由聲音而通知作業員。於此情況下,操作裝置102具備揚聲器。 In addition, in the embodiment of the present invention, the operator is notified of the alarm by displaying the alarm screen on the
此外,在本發明之實施形態中,已對於基板W為半導體晶圓之形態進行說明,但基板W並不限定於半導體晶圓。基板W可為光罩用之玻璃基板、液晶顯示裝置用之玻璃基板、有機EL顯示器等之平板顯示器用之基板、光碟用之基板、磁碟用之基板、或磁光碟用之基板等。 In addition, in the embodiment of the present invention, the form in which the substrate W is a semiconductor wafer has been described, but the substrate W is not limited to a semiconductor wafer. The substrate W can be a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a substrate for a flat panel display such as an organic EL display, a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk.
此外,本發明之實施形態中,已對於基板處理裝置101執行圖3(a)至圖3(e)所示之第1洗淨處理程序111至第5洗淨處理程序115之構成進行說明,但基板處理裝置101亦可執行其他洗淨處理程序。 In addition, in the embodiment of the present invention, the structure in which the
此外,在本發明之實施形態中,已對於藉由MT法、或MTA法而計算出異常度(馬哈朗諾比斯距離)之構成進行說明,但計算出異常度之方法只要為可藉由多變量解析而檢測異常(離群值)之方法(異常檢測法或離群值檢測法)即不特別限定。例如,可採用基於距離(distance-based)之方法、或One Class Support Vector Machine(一類支援向量機)等而作為計算出異常度之方法。 In addition, in the embodiment of the present invention, the structure of calculating the abnormality degree (Mahalanobis distance) by the MT method or the MTA method has been described, but the method for calculating the abnormality degree is only available by The method of detecting abnormalities (outliers) by multivariate analysis (abnormal detection method or outlier detection method) is not particularly limited. For example, a distance-based method, or One Class Support Vector Machine (One Class Support Vector Machine) can be used as a method for calculating the abnormality degree.
此外,在本發明之實施形態中,基板處理裝置101執行複數個處理程序,但本發明亦可應用於執行1個處理程序之基板處理裝置101。 In addition, in the embodiment of the present invention, the
本發明係對基板處理裝置之異常檢測有用。 The present invention is useful for abnormal detection of substrate processing equipment.
100‧‧‧異常檢測系統 100‧‧‧Anomaly Detection System
101‧‧‧基板處理裝置 101‧‧‧Substrate processing equipment
102‧‧‧操作裝置(異常檢測裝置) 102‧‧‧Operating device (abnormal detection device)
121‧‧‧顯示部 121‧‧‧Display
122‧‧‧輸入部 122‧‧‧Input part
123‧‧‧記憶部 123‧‧‧Memory Department
124‧‧‧控制部 124‧‧‧Control Department
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