TWI719361B - Chemical vapor deposition device, method for chemical vapor deposition device and non-transitory computer readable medium - Google Patents

Abstract

A chemical vapor deposition (CVD) device utilizes plasma technology to perform a deposition process and includes a reactive cavity, a radio frequency (RF) signal source and a power compensation module. The RF signal source is configured to generate and output an RF signal to the electrodes of the reactive cavity when the deposition process starts. The power compensation module is electrically connected to the RF signal source for timely compensating the power of the RF signal outputted by the RF signal source.

Description

Chemical vapor deposition equipment, for chemical vapor Method of deposition equipment and non-transient computer readable medium

The present invention refers to a radio frequency signal compensation mechanism, and in particular to a chemical vapor deposition equipment and method with radio frequency signal compensation mechanism, and a non-transient computer readable medium.

In the semiconductor-related industries, plasma-based chemical vapor deposition equipment can perform processes at low temperatures and has a high deposition rate, so it has been widely used to form thin films. However, the plasma in the cavity of the reaction chamber of this type of chemical vapor deposition equipment belongs to multiple physical and chemical couplings, which include the interactive effects of electric field, plasma field concentration, flow field, temperature field, chemical chain reaction, etc. At the beginning of the deposition process, after the RF signal enters the cavity, there will be an unstable plasma state. The duration of this state is also called the transient time of the plasma state. However, the existing chemical vapor deposition equipment cannot accurately grasp the transient time of the plasma state, so that the quality of the deposit cannot be grasped, and the yield or performance of the product may be affected. Therefore, it is necessary to develop a new technical solution to improve the above shortcomings.

The purpose of the present invention is to provide a radio frequency signal compensation mechanism, which compensates the radio frequency signal of the chemical vapor deposition process using plasma technology with temporal power, so that the plasma generated in the reaction chamber of the chemical vapor deposition equipment It has a short transient time and a relatively stable transient behavior, thereby improving the quality of the sediment.

According to the above objective, the present invention provides a chemical vapor deposition equipment, which uses plasma technology to perform the deposition process, and includes a reaction chamber cavity, a radio frequency signal source, and a power compensation module. The chamber of the reaction chamber is configured to perform a deposition process at a predetermined power value. The radio frequency signal source is used to generate and output radio frequency signals to the electrodes of the reaction chamber at the beginning of the deposition process. The power compensation module is electrically connected to the radio frequency signal source, and is used to perform temporal power compensation on the radio frequency signal output by the radio frequency signal source.

According to an embodiment of the present invention, the above-mentioned power compensation module is used to compensate the radio frequency signal generated by the radio frequency signal source at the beginning of the deposition process, so that the power of the radio frequency signal reaches approximately 1.3 to 1.5 times the predetermined power value. After a predetermined time, stop compensating for the radio frequency signal, so that the power of the radio frequency signal is reduced and maintained at the predetermined power value until the end of the deposition process.

According to another embodiment of the present invention, the predetermined time is 0.5 seconds to 3 seconds.

According to another embodiment of the present invention, the chemical vapor deposition equipment is a plasma enhanced chemical vapor deposition (PECVD) equipment, and an inductively coupled plasma chemical vapor deposition (inductively coupled plasma chemical vapor deposition) equipment is used. vapor deposition; ICP-CVD) equipment or electron cyclotron resonance chemical vapor deposition (ECR-CVD) equipment.

According to another embodiment of the present invention, the chemical vapor deposition apparatus further includes an impedance matcher, which is coupled between the reaction chamber cavity and the radio frequency signal source.

According to the above objective, the present invention also provides a method for chemical vapor deposition equipment, including: determining a predetermined power value corresponding to the deposition process performed by the chemical vapor deposition equipment using plasma technology; compensating when the deposition process is started The RF signal output to the reaction chamber cavity of the chemical vapor deposition equipment makes the power of the RF signal reach an overpower value that is more than one to about 1.5 times the predetermined power value; and after a predetermined time, stop The RF signal is compensated, so that the power of the RF signal is reduced and maintained at a predetermined power value until the end of the deposition process.

According to an embodiment of the present invention, the overpower value is approximately 1.3 to 1.5 times the predetermined power value.

According to another embodiment of the present invention, the predetermined time is 0.5 seconds to 3 seconds.

According to another embodiment of the present invention, the chemical vapor deposition equipment is a plasma-assisted chemical vapor deposition equipment, an electrical induction coupling type plasma chemical vapor deposition equipment, or an electron cyclotron resonance chemical vapor deposition equipment.

According to the above objective, the present invention further provides a non-transitory computer-readable medium that stores computer program instructions, and when these computer program instructions are executed by the processor, the processor performs the following operations to control the chemical vapor deposition equipment : Setting corresponding to chemical vapor deposition equipment using plasma technology The predetermined power value of the deposition process; when the deposition process starts, adjust the RF signal source of the chemical vapor deposition equipment so that the power of the RF signal output from the RF signal source to the reaction chamber cavity of the chemical vapor deposition equipment reaches the overpower value , The overpower value is more than one time to about 1.5 times the predetermined power value; and after a predetermined time, adjust the RF signal source so that the power of the RF signal is reduced to and maintained at the predetermined power value until the end of the deposition process.

100‧‧‧Chemical Vapor Deposition Equipment

110‧‧‧RF signal source

120‧‧‧Impedance Matcher

130, 200‧‧‧Reaction chamber cavity

140‧‧‧Power Compensation Module

202‧‧‧Electrostatic Chuck

204‧‧‧electrode

206‧‧‧Chamber

208‧‧‧Plasma

210‧‧‧Vacuum System

212‧‧‧Cooling System

300‧‧‧Method

S310, S320, S330‧‧‧Step

SS‧‧‧Substrate

For a more complete understanding of the embodiments and their advantages, now refer to the following description in conjunction with the accompanying drawings, in which: [FIG. 1] is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention; [FIG. 2] is [ Fig. 1] an example of the reaction chamber cavity; [Fig. 3] is a flowchart of a method for chemical vapor deposition equipment according to an embodiment of the present invention; [Fig. 4] is a deposition of an experimental example and a comparative example of the present invention A comparison chart of the relationship between the process time and the total power consumption; and [FIG. 5] is a comparison chart of the relationship between the process time of the deposition process and the plasma impedance of the experimental example and the comparative example of the present invention.

The embodiments of the present invention are discussed in detail below. However, it can be understood that the embodiments provide many applicable inventive concepts, which can be implemented in various In a variety of specific content. The specific embodiments discussed are for illustration only, and are not intended to limit the scope of the present invention.

FIG. 1 is a schematic diagram of a chemical vapor deposition apparatus 100 according to an embodiment of the present invention. The chemical vapor deposition equipment 100 uses plasma technology to perform the deposition process, which can be plasma-assisted chemical vapor deposition (PECVD) equipment, electron cyclotron resonance chemical vapor deposition (electron cyclotron resonance chemical vapor deposition) ECR-CVD) equipment, inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment, or other suitable chemical vapor deposition equipment. As shown in FIG. 1, the chemical vapor deposition apparatus 100 includes a radio frequency signal source 110, an impedance matcher 120, a reaction chamber cavity 130 and a power compensation module 140, wherein the radio frequency signal source 110, an impedance matcher 120 and a power compensation module 140 may be arranged outside the reaction chamber cavity 130 or may be arranged on the reaction chamber cavity 130.

The radio frequency signal source 110 is used to generate radio frequency signals, and transmit the radio frequency signals to the electrodes in the reaction chamber cavity 130 through the signal transmission line. The frequency of the microwave signal emitted by the microwave signal source 110 may be 13.56 MHz, 27.12 MHz, 40.68 MHz, or a radio frequency above 60 MHz, but is not limited thereto. The impedance matcher 120 is electrically connected to the radio frequency signal source 110 and is used to adjust the input impedance of the reaction chamber cavity 130 so that the output impedance of the radio frequency signal source 110 matches the input impedance of the reaction chamber cavity 130.

The reaction chamber 130 is used for receiving radio frequency signals, and dissociating the gas molecules in the cavity to form plasma according to which plasma technology is used for precipitation. Product manufacturing process. Depending on the type of the chemical vapor deposition apparatus 100, the reaction chamber 130 can have different structures. For example, the reaction chamber cavity 200 shown in FIG. 2 belongs to a plasma-assisted chemical vapor deposition equipment, and can be used as the reaction chamber cavity 200 in the chemical vapor deposition equipment 100. In the reaction chamber 200, the electrostatic chuck 202 is used to fix and carry the substrate SS, and the electrode (not shown) on the electrostatic chuck 202 and the electrode 204 located on the opposite side of the electrostatic chuck 202 are used to receive radio frequency The signal is used to form an AC electric field between the electrostatic chuck 202 and the electrode 204, so that the process gas passing into the chamber 206 is subjected to the AC electric field to generate an ionization collision reaction, thereby forming a plasma 208. In addition, the vacuum system 210 can extract by-products generated in the chamber 206, and the cooling system 212 can pass a cooling gas (for example, high-pressure helium) to control the temperature of the substrate SS.

The power compensation module 140 is electrically connected to the radio frequency signal source 110, and is used to perform temporal power compensation on the radio frequency signal output by the radio frequency signal source 110. Specifically, the power compensation module 140 is used to compensate the RF signal generated by the RF signal source 110 at the beginning of the deposition process in the reaction chamber cavity 130 to increase the power value of the RF signal input to the reaction chamber cavity 130 Exceeding one time of the predetermined power value to about 1.5 times of the predetermined power value, and after a predetermined time, stop compensating the RF signal, so that the power of the RF signal is reduced from the overpower value and maintained at the predetermined power value until it is in the reaction chamber The deposition process in the cavity 130 ends. In some embodiments, the power compensation module 140 can compensate the power value of the radio frequency signal to approximately 1.3 to 1.5 times the predetermined power value in consideration of the energy required to generate the plasma and avoid affecting the initial potential of the reaction. And is In order to avoid excessive power consumption, the time for the compensation RF signal source 110 to compensate the RF signal may be about 0.5 seconds to 3 seconds.

FIG. 3 is a flowchart of a method 300 for a chemical vapor deposition apparatus according to an embodiment of the present invention. The method 300 is applicable to the chemical vapor deposition equipment 100 or other chemical vapor deposition equipment with power compensation function. In the method 300, step S310 is first performed to determine a predetermined power value corresponding to the deposition process performed by the chemical vapor deposition equipment using the plasma technology. The chemical vapor deposition equipment may be a plasma-assisted chemical vapor deposition equipment, an electron cyclotron resonance chemical vapor deposition equipment, an electrical induction coupling type plasma chemical vapor deposition equipment, or other suitable chemical vapor deposition equipment.

Then, proceed to step S320, when the deposition process is started, the RF signal output to the reaction chamber cavity of the chemical vapor deposition equipment is compensated, so that the power of the RF signal reaches more than one to about 1.5 times the overpower of the predetermined power value value. In other words, if the predetermined power value is PV, the overpower value is greater than PV, and the maximum value of the overpower value is approximately 1.5×PV. In some embodiments, the overpower value may be set at approximately 1.3 to 1.5 times the predetermined power value PV.

Then, step S330 is performed, after a predetermined time, the compensation of the radio frequency signal is stopped, so that the power of the radio frequency signal is reduced to and maintained at the predetermined power value until the deposition process is completed. In other words, when the predetermined time arrives after the time point when the deposition process is started, the power of the RF signal is reduced from the overpower value to the predetermined power value of PV, and then the power of the RF signal is maintained at the predetermined power value of PV until the deposition process end. In some embodiments, in order to avoid For excessive power consumption, the predetermined time may be about 0.5 seconds to 3 seconds, that is, the power compensation time for the radio frequency signal is about 0.5 seconds to 3 seconds.

The above method 300 for chemical vapor deposition equipment can also be implemented as a computer program product and stored in a computer-readable recording medium. When the computer program product is loaded and executed, the chemical vapor deposition process of the present invention can be completed. The method of compensating the radio frequency power generated by the facies deposition equipment. Among them, the above-mentioned computer-readable recording medium can be read-only memory, flash memory, floppy disk, hard disk, optical disk, flash drive, tape, a database that can be accessed by the network, or those who are familiar with this technique can easily think about it. And a computer with the same function can read the recording medium.

4 is a comparison diagram of the relationship between the running time and the total power consumption of the deposition process of the embodiment of the present invention and the comparative example. FIG. 5 is a comparison diagram of the relationship between the progress time of the deposition process and the plasma impedance of the experimental example and the comparative example of the present invention. In FIGS. 4 and 5, the embodiment of the present invention and the comparative example are both used for depositing an amorphous silicon film on a silicon substrate. The difference between the embodiment of the present invention and the comparative example is that the power value of the radio frequency signal in the embodiment of the present invention is compensated to 100 watts in the first 2 seconds of the deposition process, and is reduced to 68 watts after the second second. The power value of the RF signal in the example is maintained at 68 watts during the deposition process. As shown in FIG. 4, the total power consumption of the embodiment of the present invention rises to more than 0 at about the end of the first second, while the total power consumption of the comparative example only rises to more than 0 after the end of the second second, and the embodiment of the present invention The total power consumption in the transient time is not less than -10 watts, and the total power consumption of the comparative example is as low as -50 watts in the transient time. In addition, as shown in FIG. 5, the plasma real part impedance and imaginary part impedance of the embodiment of the present invention both reach a stable state within the first second of the start of the process, while the plasma real part impedance and imaginary part impedance of the comparative example are in the process Stable after the first 2 seconds state. It can be seen from the above that, compared with the plasma generated according to the comparative example, the plasma generated according to the embodiment of the present invention has a shorter transient time and a more stable transient behavior, thereby improving the production quality of amorphous silicon thin films. .

It should be noted that the embodiment of the present invention can be used not only for depositing amorphous silicon thin films, but also for any deposition process using plasma technology, such as silicon nitride, silicon oxide, silicon oxynitride and other thin film processes, but is not limited to this. In addition, the embodiments of the present invention can be applied to any chemical vapor deposition equipment that generates plasma through radio frequency signals for the deposition process, such as plasma-assisted chemical vapor deposition equipment, inductively coupled plasma chemical vapor deposition equipment, Electron cyclotron resonance chemical vapor deposition equipment or other suitable chemical vapor deposition equipment.

In summary, the embodiment of the present invention performs temporal power compensation on the radio frequency signal of the chemical vapor deposition process using plasma technology, which can shorten the transient time of the plasma generated in the reaction chamber of the chemical vapor deposition equipment , And can make the plasma have a relatively stable transient behavior, thereby improving the production quality of the deposit.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧Chemical Vapor Deposition Equipment

110‧‧‧RF signal source

120‧‧‧Impedance Matcher

130‧‧‧Reaction chamber cavity

140‧‧‧Power Compensation Module

Claims (9)

A chemical vapor deposition equipment uses plasma technology to perform a deposition process. The chemical vapor deposition equipment includes: a reaction chamber cavity configured to perform the deposition process at a predetermined power value; and a radio frequency signal source with To generate and output a radio frequency signal to the electrode of the reaction chamber cavity at the beginning of the deposition process; and a power compensation module electrically connected to the radio frequency signal source, and the power compensation control module is used to start the deposition process Compensate the RF signal generated by the RF signal source so that the power of the RF signal reaches approximately 1.3 to 1.5 times the predetermined power value, and after a predetermined period of time, stop compensating for the RF signal, so that the RF signal is The power is reduced and maintained at the predetermined power value until the end of the deposition process. According to the chemical vapor deposition apparatus described in item 1 of the scope of patent application, the predetermined time is about 0.5 seconds to 3 seconds. For example, the chemical vapor deposition equipment described in item 1 or 2 of the scope of patent application is a plasma enhanced chemical vapor deposition (PECVD) equipment, an electron cyclotron chemical vapor deposition (electron cyclotron) Resonance chemical vapor deposition; ECR-CVD) equipment or an inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment. The chemical vapor deposition equipment described in item 1 or 2 of the scope of the patent application further includes: an impedance matcher coupled between the reaction chamber cavity and the radio frequency signal source. A method for a chemical vapor deposition equipment, comprising: determining a predetermined power value corresponding to a deposition process performed by the chemical vapor deposition equipment using plasma technology; when the deposition process is started, compensation is output to the A radio frequency signal in the chamber of a reaction chamber of a chemical vapor deposition equipment, so that the power of the radio frequency signal reaches an overpower value that is more than one to about 1.5 times the predetermined power value; and after a predetermined After a period of time, stop compensating for the radio frequency signal, so that the power of the radio frequency signal is reduced to and maintained at the predetermined power value until the end of the deposition process. For the method described in item 5 of the scope of patent application, the overpower value is about 1.3 to 1.5 times the predetermined power value. The method described in item 6 of the scope of the patent application, wherein the predetermined time is about 0.5 seconds to 3 seconds. The method according to any one of items 5 to 7 in the scope of the patent application, wherein the chemical vapor deposition equipment is a plasma enhanced chemical vapor deposition (PECVD) equipment, an electron cyclotron resonance chemistry Electron cyclotron resonance chemical vapor deposition (ECR-CVD) equipment or an inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment. A non-transitory computer-readable medium that stores computer program instructions. When the computer program instructions are executed by a processor, the processor is caused to perform the following operations to control a chemical vapor deposition equipment: A predetermined power value of a deposition process performed by the phase deposition equipment using plasma technology; at the beginning of the deposition process, a radio frequency signal source of the chemical vapor deposition equipment is adjusted so that the radio frequency signal source is output to the chemical gas The power of a radio frequency signal of a reaction chamber cavity of the phase deposition equipment reaches an overpower value that is more than one to about 1.5 times the predetermined power value; and after a predetermined time has elapsed, the radio frequency signal is adjusted Power source to reduce and maintain the power of the radio frequency signal at the predetermined power value until the end of the deposition process.

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