CN111270224B - Chemical vapor deposition apparatus, method for the same, and power compensation module - Google Patents
Chemical vapor deposition apparatus, method for the same, and power compensation module Download PDFInfo
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- CN111270224B CN111270224B CN201811474748.XA CN201811474748A CN111270224B CN 111270224 B CN111270224 B CN 111270224B CN 201811474748 A CN201811474748 A CN 201811474748A CN 111270224 B CN111270224 B CN 111270224B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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Abstract
The invention discloses a chemical vapor deposition device, a method for the device and a power compensation module. The chemical vapor deposition equipment performs a deposition process by using a plasma technology and comprises a reaction chamber cavity, a radio frequency signal source and a power compensation module. The RF signal source is used for generating and outputting an RF signal to an electrode of the chamber cavity when the deposition process is started. The power compensation module is electrically connected with the radio frequency signal source and is used for performing temporal power compensation on the radio frequency signal output by the radio frequency signal source. The invention can ensure that the plasma generated in the reaction type cavity of the chemical vapor deposition equipment has shorter transient time and more stable transient behavior, thereby improving the quality of the sediment.
Description
Technical Field
The present invention relates to a radio frequency signal compensation mechanism, and more particularly, to a chemical vapor deposition apparatus having a radio frequency signal compensation mechanism, a method thereof, and a power compensation module.
Background
In the semiconductor industry, plasma-type chemical vapor deposition apparatuses are widely used to form thin films because they can perform processes at low temperatures and have high deposition rates. However, the plasma inside the chamber cavity of the chemical vapor deposition apparatus belongs to multiple physical and chemical couplings, which include the interaction effects of electric field, plasma field concentration, flow field, temperature field, chemical chain reaction, etc., so that when the deposition process starts, after the rf signal enters the chamber, there is an unstable plasma state, and the duration of the state is also called the transient time of the plasma state. However, the conventional chemical vapor deposition apparatus cannot accurately control the transient time of the plasma state, so that the quality of the deposition cannot be controlled, and the yield or performance of the product may be affected. Therefore, there is a need to develop a new technical solution to improve the above-mentioned disadvantages.
Disclosure of Invention
The present invention is directed to a radio frequency signal compensation mechanism for performing temporal power compensation on a radio frequency signal of a chemical vapor deposition process using a plasma technique, so that a plasma generated in a reactive chamber of a chemical vapor deposition apparatus has a short transient time and a stable transient behavior, thereby improving the quality of a deposit.
In accordance with the above objectives, the present invention provides a chemical vapor deposition apparatus, which performs a deposition process using a plasma technique, and comprises a chamber, a radio frequency signal source, and a power compensation module. The chamber is configured to perform a deposition process at a predetermined power level. The RF signal source is used for generating and outputting an RF signal to an electrode of the chamber cavity when the deposition process is started. The power compensation module is electrically connected with the radio frequency signal source and is used for performing temporal power compensation on the radio frequency signal output by the radio frequency signal source.
According to an embodiment of the present invention, the power compensation module is configured to compensate the rf signal generated by the rf signal source when the deposition process is started, so that the power of the rf signal reaches about 1.3 times to 1.5 times of the predetermined power value, and after a predetermined time, stop compensating the rf signal, so that the power of the rf signal is reduced to and maintained at the predetermined power value until the deposition process is ended.
According to another embodiment of the present invention, the predetermined time is 0.5 seconds to 3 seconds.
According to another embodiment of the present invention, the chemical vapor deposition apparatus is a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatus, or an electron cyclotron resonance chemical vapor deposition (ECR-CVD) apparatus.
According to another embodiment of the present invention, the chemical vapor deposition apparatus further comprises an impedance matcher coupled between the chamber and the rf signal source.
In accordance with the above object, the present invention further provides a method for chemical vapor deposition apparatus, comprising: determining a preset power value of a deposition process performed by the plasma technology corresponding to the chemical vapor deposition equipment; when the deposition process is started, compensating the radio-frequency signal output to the reaction chamber cavity of the chemical vapor deposition equipment to enable the power of the radio-frequency signal to reach an over-power value, wherein the over-power value is more than 1 time to about 1.5 times of a preset power value; and stopping compensating the radio frequency signal after the preset time, and reducing the power of the radio frequency signal to and maintaining the power at the preset power value until the deposition process is finished.
According to an embodiment of the present invention, the overshoot power is about 1.3 to 1.5 times the predetermined power.
According to another embodiment of the present invention, the predetermined time is 0.5 seconds to 3 seconds.
According to another embodiment of the present invention, the chemical vapor deposition apparatus is a plasma-assisted chemical vapor deposition apparatus, an inductively coupled plasma chemical vapor deposition apparatus, or an electron cyclotron resonance chemical vapor deposition apparatus.
In accordance with the above objectives, the present invention further provides a power compensation module for a chemical vapor deposition apparatus, comprising: the device is used for setting a preset power value corresponding to the deposition process of the chemical vapor deposition equipment by using the plasma technology; when a deposition process is started, adjusting a radio frequency signal source of the chemical vapor deposition equipment to enable the power of a radio frequency signal output by the radio frequency signal source to a reaction chamber cavity of the chemical vapor deposition equipment to reach an over-power value, wherein the over-power value is more than 1 time to about 1.5 times of a preset power value; and after the preset time, adjusting the radio frequency signal source to reduce the power of the radio frequency signal to and maintain the power at the preset power value until the deposition process is finished.
The invention has the beneficial effects that the radio frequency signal compensation mechanism provided by the invention is used for carrying out time power compensation on the radio frequency signal of the chemical vapor deposition process using the plasma technology, so that the plasma generated in the reaction type cavity of the chemical vapor deposition equipment has shorter transient time and more stable transient behavior, and the quality of the deposit is further improved.
Drawings
For a more complete understanding of the embodiments and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of a chemical vapor deposition apparatus according to an embodiment of the present invention;
FIG. 2 is an example of the chamber cavity of FIG. 1;
FIG. 3 is a flow chart of a method for a chemical vapor deposition apparatus according to an embodiment of the invention;
FIG. 4 is a graph comparing the time for performing the deposition process according to the experimental example and the comparative example with the total power consumption; and
FIG. 5 is a graph comparing the plasma impedance with the time of the deposition process according to the experimental example and the comparative example.
Detailed Description
Embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the invention.
FIG. 1 is a schematic view of a chemical vapor deposition apparatus 100 according to an embodiment of the invention. The chemical vapor deposition apparatus 100 is a deposition process using a plasma technology, and may be a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, an electron cyclotron resonance chemical vapor deposition (ECR-CVD) apparatus, an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatus, or other suitable chemical vapor deposition apparatus. As shown in fig. 1, the chemical vapor deposition apparatus 100 includes an rf signal source 110, an impedance matcher 120, a chamber cavity 130, and a power compensation module 140, wherein the rf signal source 110, the impedance matcher 120, and the power compensation module 140 may be disposed outside the chamber cavity 130 or disposed on the chamber cavity 130.
The rf signal source 110 is used to generate rf signals and transmit the rf signals to the electrodes in the chamber 130 through the signal transmission line. The frequency of the microwave signal emitted by the microwave signal source 110 may be, but is not limited to, a radio frequency above 13.56MHz, 27.12MHz, 40.68MHz, or 60 MHz. The impedance matcher 120 is electrically connected to the rf signal source 110, and is configured to adjust an input impedance of the chamber body 130, so that an output impedance of the rf signal source 110 is matched with the input impedance of the chamber body 130.
The chamber 130 is configured to receive the rf signal and dissociate gas molecules in the chamber to form a plasma, thereby performing a deposition process using a plasma technique. The chamber body 130 may have different configurations depending on the type of the chemical vapor deposition apparatus 100. For example, the reaction chamber 200 shown in fig. 2 belongs to a plasma-assisted chemical vapor deposition apparatus, and can be used as the reaction chamber 200 in the chemical vapor deposition apparatus 100. In the chamber cavity 200, the electrostatic chuck 202 is used for fixing and carrying the substrate SS, and an electrode (not shown) on the electrostatic chuck 202 and an electrode 204 located at an opposite side of the electrostatic chuck 202 are used for receiving the rf signal, so as to form an ac electric field between the electrostatic chuck 202 and the electrode 204, so that the process gas introduced into the chamber 206 is subjected to the ac electric field to generate an ionization collision reaction, thereby forming a plasma 208. In addition, the vacuum system 210 may evacuate byproducts generated within the chamber 206, and the cooling system 212 may introduce a cooling gas (e.g., he gas) to control the temperature of the substrate SS.
The power compensation module 140 is electrically connected to the rf signal source 110, and is configured to perform temporal power compensation on the rf signal output by the rf signal source 110. Specifically, the power compensation module 140 is configured to compensate the rf signal generated by the rf signal source 110 when the deposition process in the chamber 130 starts, so as to increase the power value of the rf signal input to the chamber 130 to be 1 times greater than the predetermined power value to about 1.5 times greater than the predetermined power value, and after a predetermined time, stop compensating the rf signal, so that the power of the rf signal is reduced from the excessive power value to the predetermined power value and is maintained at the predetermined power value until the deposition process in the chamber 130 is finished. In some embodiments, considering the energy required for generating the plasma and the initial potential for avoiding affecting the reaction, the power compensation module 140 may compensate the power value of the rf signal to about 1.3 to 1.5 times of the predetermined power value, and the time for the compensation rf signal source 110 to compensate the rf signal may be about 0.5 to 3 seconds in order to avoid excessive power consumption.
FIG. 3 is a flow chart of a method 300 for a chemical vapor deposition apparatus according to an embodiment of the invention. The method 300 is suitable for the chemical vapor deposition apparatus 100 or other chemical vapor deposition apparatuses with power compensation function. In the method 300, step S310 is performed to determine a predetermined power value corresponding to a deposition process performed by a chemical vapor deposition apparatus using a plasma technique. The chemical vapor deposition apparatus may be a plasma-assisted chemical vapor deposition apparatus, an electron cyclotron resonance chemical vapor deposition apparatus, an inductively coupled plasma chemical vapor deposition apparatus, or other suitable chemical vapor deposition apparatus.
Next, step S320 is performed, when the deposition process is started, the rf signal output to the reaction chamber of the chemical vapor deposition apparatus is compensated, so that the power of the rf signal reaches an overpower value which is more than 1 time to about 1.5 times of the predetermined power value. That is, if the predetermined power level is PV, the overshoot level is greater than PV, and the maximum value of the overshoot level is about 1.5 XPV. In some embodiments, the overshoot value may be set at about 1.3 to 1.5 times the predetermined power value PV.
Then, step S330 is performed, after a predetermined time, the compensation of the rf signal is stopped, so that the power of the rf signal is reduced to and maintained at the predetermined power value until the deposition process is finished. In other words, when the predetermined time is reached after the time point when the deposition process is started, the power of the rf signal is decreased from the overpower value to the predetermined power value PV, and then the power of the rf signal is maintained at the predetermined power value PV until the deposition process is ended. In some embodiments, to avoid excessive power consumption, the predetermined time may be about 0.5 seconds to 3 seconds, i.e., the power compensation time for the rf signal is about 0.5 seconds to 3 seconds.
The method 300 for chemical vapor deposition equipment may also be implemented as a computer program product and stored in a computer readable recording medium, and when the computer program product is loaded into and executed by a computer, the method for compensating for rf power generated by chemical vapor deposition equipment according to the present invention can be completed. The computer readable recording medium can be a read only memory, a flash memory, a floppy disk, a hard disk, an optical disk, a walkman, a magnetic tape, a database accessible through a network, or a computer readable recording medium with the same functions as those easily understood by those skilled in the art.
FIG. 4 is a graph comparing the time of the deposition process according to the embodiment of the present invention and the comparative example with the total power consumption. FIG. 5 is a graph comparing the plasma impedance with the time of the deposition process according to the experimental example and the comparative example. In fig. 4 and 5, the embodiment of the present invention and the comparative example are used to deposit an amorphous silicon thin film on a silicon substrate. The difference between the embodiments of the present invention and the comparative example is that the rf signal power value of the embodiments of the present invention is compensated to 100 w in the first 2 seconds when the deposition process is performed and is reduced to 68 w after the 2 nd second, while the rf signal power value of the comparative example is maintained to 68 w when the deposition process is performed. As shown in FIG. 4, the total power consumption of the embodiment of the present invention increases to above 0 at the end of the 1 st second, while the total power consumption of the comparative example increases to above 0 after the end of the 2 nd second, and the total power consumption of the embodiment of the present invention is not lower than-10W during the transient time, while the total power consumption of the comparative example is lower than-50W during the transient time. Further, as shown in fig. 5, both the real part impedance and the imaginary part impedance of the plasma of the embodiment of the present invention reach the steady state within 1 second from the start of the process, and the real part impedance and the imaginary part impedance of the plasma of the comparative example reach the steady state after 2 second from the start of the process. As can be seen from the above, compared with the plasma generated according to the comparative example, the plasma generated according to the embodiment of the present invention has a shorter transient time and a more stable transient behavior, thereby improving the production quality of the amorphous silicon thin film.
It should be noted that the embodiments of the present invention can be applied not only to the deposition of amorphous silicon thin films, but also to any deposition process using plasma technology, such as, but not limited to, silicon nitride, silicon oxide, silicon oxynitride, and the like. In addition, the embodiments of the invention can be applied to any chemical vapor deposition apparatus that generates plasma by using radio frequency signals to perform a deposition process, such as a plasma-assisted chemical vapor deposition apparatus, an inductively coupled plasma chemical vapor deposition apparatus, an electron cyclotron resonance chemical vapor deposition apparatus, or other suitable chemical vapor deposition apparatus.
In summary, the embodiments of the present invention perform the temporal power compensation on the rf signal of the cvd process using the plasma technology, so as to shorten the transient time of the plasma generated in the reaction chamber of the cvd apparatus, and enable the plasma to have a more stable transient behavior, thereby improving the production quality of the deposition.
Although the present invention has been described with reference to the above embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A chemical vapor deposition apparatus for performing a deposition process using a plasma technique, the chemical vapor deposition apparatus comprising:
a reaction chamber cavity configured to perform the deposition process at a predetermined power value;
a radio frequency signal source for generating and outputting a radio frequency signal to an electrode of the reaction chamber cavity at the beginning of the deposition process; and
the power compensation module is electrically connected with the radio frequency signal source and used for compensating the radio frequency signal generated by the radio frequency signal source when the deposition process starts, so that the power of the radio frequency signal reaches 1.3 to 1.5 times of the preset power value, after a preset time, the compensation of the radio frequency signal is stopped, the power of the radio frequency signal is reduced to and maintained at the preset power value until the deposition process is finished, and the preset time is 0.5 to 3 seconds.
2. The chemical vapor deposition apparatus according to claim 1, wherein the chemical vapor deposition apparatus is a plasma-assisted chemical vapor deposition apparatus, an electron cyclotron resonance chemical vapor deposition apparatus, or an inductively coupled plasma chemical vapor deposition apparatus.
3. The chemical vapor deposition apparatus of claim 1, further comprising:
and the impedance matcher is coupled between the reaction chamber cavity and the radio frequency signal source.
4. A method for a chemical vapor deposition apparatus, comprising:
determining a preset power value corresponding to a deposition process of the chemical vapor deposition equipment by using a plasma technology;
when the deposition process is started, compensating the radio-frequency signal output to a reaction chamber cavity of the chemical vapor deposition equipment to enable the power of the radio-frequency signal to reach an over-power value, wherein the over-power value is 1.3 times to 1.5 times of the preset power value; and
and after a preset time, stopping compensating the radio frequency signal, and reducing the power of the radio frequency signal to and maintaining the power at the preset power value until the deposition process is finished, wherein the preset time is 0.5-3 seconds.
5. The method of claim 4, wherein the chemical vapor deposition apparatus is a plasma-assisted chemical vapor deposition apparatus, an electron cyclotron resonance chemical vapor deposition apparatus, or an inductively coupled plasma chemical vapor deposition apparatus.
6. A power compensation module for a chemical vapor deposition apparatus, the power compensation module comprising:
the device is used for setting a preset power value corresponding to the deposition process of the chemical vapor deposition equipment by using a plasma technology;
when the deposition process is started, adjusting a radio frequency signal source of the chemical vapor deposition equipment to enable the power of a radio frequency signal output by the radio frequency signal source to a reaction chamber cavity of the chemical vapor deposition equipment to reach an over-power value, wherein the over-power value is 1.3 times to 1.5 times of the preset power value; and
and after a preset time, adjusting the radio frequency signal source to reduce the power of the radio frequency signal to and maintain the power at the preset power value until the deposition process is finished, wherein the preset time is 0.5-3 seconds.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1860594A (en) * | 2003-09-30 | 2006-11-08 | 东京毅力科创株式会社 | Plasma processing system |
| CN1995453A (en) * | 2005-12-28 | 2007-07-11 | 上海广电Nec液晶显示器有限公司 | PCVD filming process |
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| US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| US6718272B1 (en) * | 2000-11-01 | 2004-04-06 | Eni Technology Inc. | Fast transient protection for RF plasma generator |
| US7524750B2 (en) * | 2006-04-17 | 2009-04-28 | Applied Materials, Inc. | Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD |
| JP5319150B2 (en) * | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and computer-readable storage medium |
| CN103025041A (en) * | 2011-09-28 | 2013-04-03 | 中国科学院微电子研究所 | Radio frequency impedance matcher |
| JP6180799B2 (en) * | 2013-06-06 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| US9508529B2 (en) * | 2014-10-23 | 2016-11-29 | Lam Research Corporation | System, method and apparatus for RF power compensation in a plasma processing system |
| CN104694906B (en) * | 2015-02-09 | 2018-01-05 | 江南大学 | A kind of non-parallel plate capacitance coupling plasma chemical gaseous phase depositing process |
| US9741539B2 (en) * | 2015-10-05 | 2017-08-22 | Applied Materials, Inc. | RF power delivery regulation for processing substrates |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1860594A (en) * | 2003-09-30 | 2006-11-08 | 东京毅力科创株式会社 | Plasma processing system |
| CN1995453A (en) * | 2005-12-28 | 2007-07-11 | 上海广电Nec液晶显示器有限公司 | PCVD filming process |
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