TWI711634B - Piezoelectric film, method of manufacturing piezoelectric film, and piezoelectric element - Google Patents

Piezoelectric film, method of manufacturing piezoelectric film, and piezoelectric element Download PDF

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TWI711634B
TWI711634B TW107141621A TW107141621A TWI711634B TW I711634 B TWI711634 B TW I711634B TW 107141621 A TW107141621 A TW 107141621A TW 107141621 A TW107141621 A TW 107141621A TW I711634 B TWI711634 B TW I711634B
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crystalline polymer
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fluororesin
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佐藤祐輔
寺島久明
佐藤信文
菅野和幸
會田惠子
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日商吳羽股份有限公司
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Abstract

課題 本發明提供一種可抑制壓電常數d31之降低之壓電體薄膜、壓電體薄膜之製造方法、及壓電體元件。 解決手段 本發明之壓電體薄膜含有氟樹脂作為壓電材料,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元,並且前述壓電體薄膜之壓電常數d31為20 pC/N以上,且藉由TMA測定所求出之收縮開始之外推起始溫度為90℃以上且115℃以下。將壓電體薄膜在100℃下加熱24小時之前後所測定之壓電常數d31之差相對於加熱24小時之前的壓電常數d31為20%以下。Problem The present invention provides a piezoelectric thin film, a method for manufacturing a piezoelectric thin film, and a piezoelectric element that can suppress the decrease in the piezoelectric constant d31. Solution The piezoelectric film of the present invention contains a fluororesin as the piezoelectric material, the fluororesin includes a repeating unit derived from vinylidene fluoride as the main structural unit, and the piezoelectric constant d31 of the piezoelectric film is 20 pC/ N or more, and the shrinkage start extrapolation start temperature determined by TMA measurement is 90°C or more and 115°C or less. The difference in piezoelectric constant d31 measured before and after heating the piezoelectric thin film at 100° C. for 24 hours is 20% or less with respect to the piezoelectric constant d31 before heating 24 hours.

Description

壓電體薄膜、壓電體薄膜之製造方法、及壓電體元件Piezoelectric film, method of manufacturing piezoelectric film, and piezoelectric element

本發明係關於一種具備氟樹脂作為壓電材料之壓電體薄膜、壓電體薄膜之製造方法、及具備壓電體薄膜之壓電體元件,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元。The present invention relates to a piezoelectric thin film with a fluororesin as a piezoelectric material, a method for manufacturing a piezoelectric thin film, and a piezoelectric element with a piezoelectric thin film. The fluororesin includes repeats derived from vinylidene fluoride Unit as the main structural unit.

具備聚偏二氟乙烯作為壓電材料之壓電體薄膜被用於振動感測器、接觸感測器、超音波感測器、加速度感測器等各種感測器、加振用制動器、制振用制動器等各種制動器等多種用途。專利文獻1中,在製造聚偏二氟乙烯薄膜時,同時進行向MD(Machine Direction,機械方向)方向之聚偏二氟乙烯片材之單軸延伸處理、及聚偏二氟乙烯片材之極化處理。藉由向MD方向之延伸所製造之壓電體薄膜就具有高壓電常數d31之方面而言優異。 先行技術文獻 專利文獻Piezoelectric films with polyvinylidene fluoride as the piezoelectric material are used in various sensors such as vibration sensors, touch sensors, ultrasonic sensors, acceleration sensors, etc., vibration brakes, and brakes. Various types of brakes such as vibration brakes, etc. In Patent Document 1, when a polyvinylidene fluoride film is produced, the uniaxial stretching process of the polyvinylidene fluoride sheet in the MD (Machine Direction) direction and the polyvinylidene fluoride sheet are simultaneously performed Polarization treatment. The piezoelectric thin film manufactured by extending in the MD direction is excellent in terms of having a high voltage electric constant d31. Prior technical literature Patent literature

專利文獻1:日本專利特開2008-171935號公報Patent Document 1: Japanese Patent Laid-Open No. 2008-171935

發明欲解決之課題 且說,藉由延伸所製造之壓電體薄膜通常係以捲繞成捲狀之製品之形式暫且保管,然後用於感測器、制動器之加工。此時,將壓電體薄膜自捲狀之製品抽出,在感測器、制動器等之加工時,實施蒸鍍處理、層壓處理等伴隨加熱之處理之加工製程中壓電體薄膜被高溫加熱,結果導致該壓電體薄膜之壓電常數d31降低之新的課題。並且,具備此種壓電常數d31降低之壓電薄膜之壓電體元件中會產生不良情況。The problem to be solved by the invention In addition, the piezoelectric film manufactured by stretching is usually temporarily stored in the form of a rolled product, and then used for the processing of sensors and brakes. At this time, the piezoelectric film is drawn out from the rolled product, and the piezoelectric film is heated at a high temperature during the processing of the sensor, brake, etc., which is accompanied by heat treatment such as vapor deposition and lamination. As a result, the piezoelectric constant d31 of the piezoelectric thin film is a new problem. In addition, a piezoelectric element having such a piezoelectric thin film with a reduced piezoelectric constant d31 may cause problems.

本發明之目的在於提供一種可抑制壓電常數d31之降低之壓電體薄膜、壓電體薄膜之製造方法、及壓電體元件。 解決問題之技術手段The object of the present invention is to provide a piezoelectric thin film, a method of manufacturing a piezoelectric thin film, and a piezoelectric element that can suppress the decrease in the piezoelectric constant d31. Technical means to solve the problem

用以解決上述課題之壓電體薄膜係含有氟樹脂作為壓電材料之壓電體薄膜,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元,並且前述壓電體薄膜之壓電常數d31為20 pC/N以上,且藉由TMA測定所求出之收縮開始之外推起始溫度為90℃以上且135℃以下。The piezoelectric film used to solve the above-mentioned problems is a piezoelectric film containing a fluororesin as a piezoelectric material. The fluororesin contains a repeating unit derived from vinylidene fluoride as the main structural unit, and the pressure of the piezoelectric film is The electric constant d31 is 20 pC/N or more, and the extrapolation start temperature of the shrinkage obtained by the TMA measurement is 90°C or more and 135°C or less.

用以解決上述課題之壓電體薄膜之製造方法包括:薄膜形成製程,對由氟樹脂形成之片材,進行延伸處理及極化處理,藉此形成具有壓電性之結晶性高分子薄膜(以下,亦簡稱為「結晶性高分子薄膜」),前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元;緩和製程,90℃以上且115℃以下為第1溫度,將前述結晶性高分子薄膜在前述第1溫度下加熱5秒以上且130秒以下,藉此對前述結晶性高分子薄膜,進行熱固定及殘留應變之緩和;及二次加熱製程,將前述緩和製程後的前述結晶性高分子薄膜在前述第1溫度以上且140℃以下進而再加熱而製造壓電體薄膜。The manufacturing method of piezoelectric thin film to solve the above-mentioned problems includes: thin film forming process, stretching and polarization processing on the sheet formed of fluororesin, thereby forming a piezoelectric crystalline polymer thin film ( Hereinafter, also referred to as "crystalline polymer film"), the aforementioned fluororesin contains repeating units derived from vinylidene fluoride as the main structural unit; the relaxation process, 90°C or more and 115°C or less is the first temperature, and the aforementioned crystal The crystalline polymer film is heated at the first temperature for 5 seconds or more and 130 seconds or less, thereby thermally fixing the crystalline polymer film and alleviating residual strain; and a secondary heating process to reduce the temperature of the crystalline polymer film. The crystalline polymer film is further heated at the first temperature or higher and 140° C. or lower to produce a piezoelectric film.

用以解決上述課題之壓電體薄膜之製造方法係由結晶性高分子片材製造壓電體薄膜之方法,且包括:薄膜形成製程,對由氟樹脂形成之片材,進行延伸處理及極化處理,藉此形成具有壓電性之結晶性高分子薄膜,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元;及緩和製程,在高於115℃且150℃以下之溫度下將前述結晶性高分子薄膜加熱10秒以上且140秒以下,藉此對前述結晶性高分子薄膜,進行熱固定及殘留應變之緩和。The method of manufacturing piezoelectric film to solve the above-mentioned problems is a method of manufacturing piezoelectric film from a crystalline polymer sheet, and includes: a film forming process, stretching a sheet formed of a fluororesin, and Chemical treatment to form a piezoelectric crystalline polymer film. The aforementioned fluororesin contains repeating units derived from vinylidene fluoride as the main structural unit; and to ease the process at a temperature above 115°C and below 150°C Next, the crystalline polymer film is heated for 10 seconds or more and 140 seconds or less, thereby thermally fixing the crystalline polymer film and alleviating residual strain.

根據上述壓電體薄膜及上述壓電體薄膜之製造方法,即便在壓電體薄膜之加工時對壓電體薄膜進行加熱,亦可抑制因加工所致之壓電常數d31之降低。According to the aforementioned piezoelectric thin film and the aforementioned piezoelectric thin film manufacturing method, even if the piezoelectric thin film is heated during the processing of the piezoelectric thin film, the reduction in piezoelectric constant d31 due to processing can be suppressed.

上述壓電體薄膜中,將前述壓電體薄膜在100℃下加熱24小時之處理為試驗處理,前述試驗處理之前後所測定之壓電常數d31之差相對於前述試驗處理前的壓電常數d31可為20%以下。根據該壓電體薄膜,可確保壓電常數d31之衰減率為20%以下,因此與藉由壓電常數d31與外推起始溫度特定出壓電體薄膜之構成相比,可更確實地抑制因加工所致之壓電常數d31之降低。In the above piezoelectric film, the treatment of heating the piezoelectric film at 100°C for 24 hours is a test treatment. The difference in the piezoelectric constant d31 measured before and after the test treatment is relative to the piezoelectric constant before the test treatment d31 can be 20% or less. According to this piezoelectric film, the attenuation rate of the piezoelectric constant d31 can be ensured to be 20% or less. Therefore, compared with the piezoelectric constant d31 and the extrapolated starting temperature to specify the structure of the piezoelectric film, it can be more reliable Suppress the reduction of piezoelectric constant d31 due to processing.

上述壓電體薄膜中,前述氟樹脂可為偏二氟乙烯之均聚物。根據該壓電體薄膜,與氟樹脂為偏二氟乙烯之共聚物之構成相比,容易提高壓電體薄膜之壓電常數d31。In the piezoelectric film, the fluororesin may be a homopolymer of vinylidene fluoride. According to this piezoelectric thin film, it is easier to increase the piezoelectric constant d31 of the piezoelectric thin film compared to a structure in which the fluororesin is a copolymer of vinylidene fluoride.

上述壓電體薄膜之製造方法中,前述二次加熱製程可將前述結晶性高分子薄膜在前述第1溫度下進行加熱。根據該壓電體薄膜之製造方法,亦可實現緩和製程中所使用之加熱之設備與二次加熱製程中所使用之加熱之設備之共用。In the manufacturing method of the piezoelectric thin film, the second heating process may heat the crystalline polymer thin film at the first temperature. According to the manufacturing method of the piezoelectric thin film, the heating equipment used in the relaxation process and the heating equipment used in the secondary heating process can also be shared.

用以解決上述課題之壓電體元件具備上述壓電體薄膜。 發明效果The piezoelectric element for solving the above-mentioned problems includes the above-mentioned piezoelectric thin film. Invention effect

根據本發明之壓電體薄膜、壓電體薄膜之製造方法、及壓電體元件,可抑制壓電常數d31之降低。According to the piezoelectric thin film, the manufacturing method of the piezoelectric thin film, and the piezoelectric element of the present invention, the reduction of the piezoelectric constant d31 can be suppressed.

以下,參照圖1對壓電體薄膜、壓電體薄膜之製造方法、及壓電體元件之一實施形態進行說明。再者,壓電體薄膜例如作為製品捲繞成捲狀而搬送。具備壓電體薄膜之壓電體元件係使用自壓電體薄膜之製品抽出之壓電體薄膜而製造。 [壓電體薄膜]Hereinafter, one embodiment of a piezoelectric thin film, a method of manufacturing a piezoelectric thin film, and a piezoelectric element will be described with reference to FIG. 1. In addition, the piezoelectric film is wound into a roll as a product, and is transported. The piezoelectric element with the piezoelectric thin film is manufactured by using the piezoelectric thin film drawn from the product of the piezoelectric thin film. [Piezoelectric film]

壓電體薄膜含有氟樹脂作為壓電材料,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元。氟樹脂係包含源自偏二氟乙烯之重複單元作為主要結構單元之樹脂(以下,亦稱為聚偏二氟乙烯樹脂)。本說明書等中,所謂「主要結構單元」,意指將構成樹脂之全部之重複單元設為100莫耳%時,包含源自偏二氟乙烯之重複單元50莫耳%以上。The piezoelectric film contains a fluororesin as a piezoelectric material, and the aforementioned fluororesin contains a repeating unit derived from vinylidene fluoride as a main structural unit. The fluororesin is a resin containing a repeating unit derived from vinylidene fluoride as a main structural unit (hereinafter, also referred to as polyvinylidene fluoride resin). In this specification and the like, the "main structural unit" means that when all the repeating units constituting the resin are set to 100 mol%, the vinylidene fluoride-derived repeating unit is 50 mol% or more.

聚偏二氟乙烯樹脂較佳為均聚物,亦可為共聚物。此處之共聚物較佳為偏二氟乙烯與選自由以下之單體所組成之群組中之至少1種單體之共聚物:1-氯-1-氟-乙烯、1-氯-2-氟-乙烯、三氟乙烯、氯三氟乙烯、四氟乙烯、四氟丙烯、六氟丙烯、及氟乙烯。The polyvinylidene fluoride resin is preferably a homopolymer, but may also be a copolymer. The copolymer here is preferably a copolymer of vinylidene fluoride and at least one monomer selected from the group consisting of the following monomers: 1-chloro-1-fluoro-ethylene, 1-chloro-2 -Fluoro-ethylene, trifluoroethylene, chlorotrifluoroethylene, tetrafluoroethylene, tetrafluoropropylene, hexafluoropropylene, and vinyl fluoride.

再者,聚偏二氟乙烯樹脂之固有黏度較佳為1.0 dl/g以上。固有黏度係具有0.4 g/dl之濃度之二甲基甲醯胺溶液之30℃下之測定值。具有1.0 dl/g以上之固有黏度之聚偏二氟乙烯樹脂可抑制頸縮延伸中作用於片材之剪力導致片材斷裂。具有1.1 dl/g以上且2.0 dl/g以下之固有黏度之聚偏二氟乙烯樹脂於頸縮延伸中可獲得高強度及良好之延伸性。所謂頸縮延伸,係指延伸處理時在片材之行進方向上之一點,片材之厚度及寬度產生中間變細(頸縮部)之形態下之延伸。Furthermore, the inherent viscosity of the polyvinylidene fluoride resin is preferably 1.0 dl/g or more. The intrinsic viscosity is a value measured at 30°C of a dimethylformamide solution with a concentration of 0.4 g/dl. The polyvinylidene fluoride resin with an inherent viscosity of 1.0 dl/g or more can inhibit the shear force acting on the sheet during the necking and stretching, which causes the sheet to break. A polyvinylidene fluoride resin with an inherent viscosity of 1.1 dl/g or more and 2.0 dl/g or less can obtain high strength and good extensibility during necking stretch. The so-called necking extension refers to the extension in a form where the thickness and width of the sheet become thinner (necked part) at a point in the traveling direction of the sheet during the stretching process.

壓電體薄膜中,亦可含有氟樹脂以外之樹脂或添加劑等成分。作為氟樹脂以外之樹脂,例如可列舉:甲基丙烯酸樹脂、纖維素衍生物樹脂、聚酯樹脂、聚碳酸酯樹脂。The piezoelectric film may contain components such as resins or additives other than fluororesin. Examples of resins other than fluororesin include methacrylic resin, cellulose derivative resin, polyester resin, and polycarbonate resin.

另外,作為添加物,例如為金屬氧化物粒子、偶合劑、界面活性劑。金屬氧化物粒子例如為氧化鋁粒子、氧化鎂粒子、氧化鋯粒子、氧化釔粒子。偶合劑具有提高分散於氟樹脂中之金屬氧化物粒子與壓電材料之結合程度之功能,例如為有機鈦化合物、有機矽烷化合物、有機鋯化合物、有機鋁化合物。界面活性劑具有提高分散於氟樹脂中之金屬氧化物粒子與壓電材料之親和性之功能,例如為非離子性界面活性劑、陰離子性界面活性劑、陽離子性界面活性劑。In addition, as additives, for example, metal oxide particles, coupling agents, and surfactants. The metal oxide particles are, for example, aluminum oxide particles, magnesium oxide particles, zirconium oxide particles, and yttrium oxide particles. The coupling agent has the function of increasing the degree of bonding between the metal oxide particles dispersed in the fluororesin and the piezoelectric material, such as organic titanium compounds, organic silane compounds, organic zirconium compounds, and organic aluminum compounds. Surfactants have the function of improving the affinity between the metal oxide particles dispersed in the fluororesin and the piezoelectric material, such as nonionic surfactants, anionic surfactants, and cationic surfactants.

壓電體薄膜滿足下述[條件1][條件2]。 [條件1]壓電常數d31為20 pC/N以上。 [條件2]收縮開始之外推起始溫度為90℃以上且135℃以下。The piezoelectric thin film satisfies the following [Condition 1] [Condition 2]. [Condition 1] The piezoelectric constant d31 is 20 pC/N or more. [Condition 2] The extrapolation start temperature at the start of shrinkage is 90°C or more and 135°C or less.

再者,收縮開始之外推起始溫度係藉由使用壓電體薄膜之TMA(Thermomechanical Analyzer,熱機械分析)測定而求出。外推起始溫度(Extrapolated onset temperature)係依據JIS K0129之溫度。外推起始溫度係於加熱測定中,將低溫側之基準線向高溫側延長所得之直線、與在波峰之低溫側之曲線上斜率最大之點所引出之切線的交點之溫度。外推起始溫度係於壓電體薄膜中表現出熱收縮之行為之溫度。Furthermore, the extrapolation start temperature at the start of shrinkage is determined by the TMA (Thermomechanical Analyzer) measurement using the piezoelectric film. Extrapolated onset temperature (Extrapolated onset temperature) is based on the temperature of JIS K0129. The extrapolated starting temperature is the temperature at the intersection of the straight line obtained by extending the reference line on the low temperature side to the high temperature side and the tangent line drawn at the point of the curve on the low temperature side of the wave crest with the largest slope in the heating measurement. The extrapolated starting temperature is the temperature at which the piezoelectric film exhibits thermal shrinkage.

壓電體薄膜較佳為滿足下述[條件3]。 [條件3]試驗處理中之壓電常數d31之衰減率為20%以下。The piezoelectric thin film preferably satisfies the following [Condition 3]. [Condition 3] The attenuation rate of the piezoelectric constant d31 in the test process is 20% or less.

再者,試驗處理係將壓電體薄膜在100℃下加熱24小時之試驗,壓電常數d31之衰減率係試驗處理前後所測定之壓電常數d31之差相對於試驗處理前的壓電常數d31之比。Furthermore, the test treatment is a test in which the piezoelectric film is heated at 100°C for 24 hours. The attenuation rate of the piezoelectric constant d31 is the difference between the piezoelectric constant d31 measured before and after the test treatment relative to the piezoelectric constant before the test treatment d31 ratio.

再者,壓電體薄膜亦可在與表現出壓電常數d31之方向一致之方向上具有表面擦傷。此種表面擦傷可藉由下述方式而獲得,亦即,於壓電體薄膜之製造製程中,將具有導電性之加熱輥用於延伸處理,並使加熱輥之表面變得粗糙。壓電體薄膜所具備之表面擦傷可提高壓電體薄膜與電極之黏附強度。壓電體薄膜所具有之厚度例如為10 µm以上且500 µm以下。 [壓電體元件]Furthermore, the piezoelectric thin film may also have surface scratches in the direction consistent with the direction exhibiting the piezoelectric constant d31. Such surface scratches can be obtained by the following method, that is, in the manufacturing process of the piezoelectric film, a conductive heating roller is used for stretching treatment, and the surface of the heating roller becomes rough. The surface scratches of the piezoelectric film can improve the adhesion strength between the piezoelectric film and the electrode. The thickness of the piezoelectric film is, for example, 10 µm or more and 500 µm or less. [Piezoelectric element]

壓電體元件為壓力感測器、振動感測器、接觸感測器、超音波感測器、加速度感測器等各種感測器、加振用制動器、制振用制動器等各種制動器。Piezoelectric elements include various sensors such as pressure sensors, vibration sensors, touch sensors, ultrasonic sensors, and acceleration sensors, and various brakes such as brakes for vibration and brakes for vibration damping.

作為感測器機器之一例之振動感測器具備:鉛錘,受到振動而發生位移;及上述壓電體薄膜,承受鉛錘之荷重;且於壓電體薄膜之表面與背面具備電極。並且,振動感測器係以夾著壓電體薄膜之電極間之電壓信號之形式檢測根據振動而發生位移之鉛錘之荷重變化。A vibration sensor as an example of a sensor device is provided with a plumb weight, which is displaced by vibration, and the piezoelectric film, which bears the load of the plumb, and has electrodes on the surface and back of the piezoelectric film. In addition, the vibration sensor detects the load change of the plumb weight that is displaced by vibration in the form of a voltage signal between electrodes sandwiching a piezoelectric thin film.

作為感測器機器之其他例之接觸感測器具備覆蓋薄膜、及與覆蓋薄膜重疊之上述壓電體薄膜,且於壓電體薄膜之表面與背面具備電極。並且,接觸感測器係檢測夾著壓電體薄膜之電極間之電壓信號,並檢測被檢測出電壓信號之變化之部位作為由覆蓋薄膜按壓之部位。 [壓電體薄膜之第1製造方法]A touch sensor as another example of a sensor device includes a cover film and the above-mentioned piezoelectric film overlapping the cover film, and has electrodes on the surface and back of the piezoelectric film. In addition, the touch sensor detects the voltage signal between the electrodes sandwiching the piezoelectric film, and detects the detected portion of the voltage signal as the portion pressed by the cover film. [The first manufacturing method of piezoelectric film]

壓電體薄膜之第1製造方法係使用結晶性高分子片材作為起始原料。結晶性高分子片材係以氟樹脂作為主成分而形成。壓電體薄膜之第1製造方法包括(A)薄膜形成製程、(B)第1緩和製程、及(C)二次加熱製程。在(B)第1緩和製程與(C)二次加熱製程之間,將結晶性高分子薄膜捲取成捲狀,例如在常溫下靜置數天。 (A)薄膜形成製程The first method of manufacturing a piezoelectric film uses a crystalline polymer sheet as a starting material. The crystalline polymer sheet is formed with fluororesin as the main component. The first manufacturing method of the piezoelectric thin film includes (A) a thin film forming process, (B) a first relaxation process, and (C) a secondary heating process. Between (B) the first relaxation process and (C) the secondary heating process, the crystalline polymer film is wound into a roll shape, for example, it is allowed to stand at room temperature for several days. (A) Thin film formation process

薄膜形成製程係對結晶性高分子片材進行延伸處理及極化處理,藉此由結晶性高分子片材形成結晶性高分子薄膜之製程。延伸處理與極化處理可同時進行,亦可在進行延伸處理後,進行極化處理。The thin film forming process is a process in which the crystalline polymer sheet is stretched and polarized to form a crystalline polymer film from the crystalline polymer sheet. The extension treatment and the polarization treatment can be performed at the same time, or the polarization treatment can be performed after the extension treatment.

構成結晶性高分子片材之樹脂係使用上述之壓電體薄膜之項目中所說明之氟樹脂作為主成分之樹脂。再者,此處之「主成分」意指用以形成結晶性高分子片材之成分中含量最多之成分。構成結晶性高分子片材之樹脂藉由施加直流電壓之極化處理而表現出壓電性。The resin constituting the crystalline polymer sheet is a resin that uses the fluororesin described in the item of the piezoelectric film as the main component. Furthermore, the "main component" here means the component with the largest content among the components used to form the crystalline polymer sheet. The resin constituting the crystalline polymer sheet exhibits piezoelectricity through polarization treatment by applying a DC voltage.

進行延伸處理及極化處理之前的結晶性高分子片材係不具有壓電性之片材,例如使用溶融擠壓法、溶液澆鑄法而形成。使用溶融擠壓法所形成之結晶性高分子片材藉由變更延伸條件而適宜調整結晶性高分子片材之厚度。結晶性高分子片材之厚度例如較佳為20 µm以上且2500 µm以下,更佳為40 µm以上且1500 µm以下。具有20 µm以上之厚度之結晶性高分子片材在延伸處理時不易產生結晶性高分子片材之斷裂。具有2500 µm以下之厚度之結晶性高分子片材容易於結晶性高分子片材獲得適於延伸處理時搬送結晶性高分子片材之柔軟性。The crystalline polymer sheet before the stretching treatment and the polarization treatment is a sheet that does not have piezoelectricity, and is formed by, for example, a melt extrusion method or a solution casting method. The thickness of the crystalline polymer sheet formed by the melt extrusion method can be appropriately adjusted by changing the stretching conditions. The thickness of the crystalline polymer sheet is, for example, preferably 20 µm or more and 2500 µm or less, and more preferably 40 µm or more and 1500 µm or less. The crystalline polymer sheet with a thickness of 20 µm or more is less likely to break when the crystalline polymer sheet is stretched. The crystalline polymer sheet with a thickness of 2500 µm or less can easily obtain the flexibility of the crystalline polymer sheet suitable for conveying the crystalline polymer sheet during the stretching process.

將結晶性高分子片材送給至具有導電性之加熱輥。送給至加熱輥之結晶性高分子片材係以延伸方向作為MD方向,於與加熱輥接觸之區域進行頸縮延伸。為了有效地進行頸縮延伸,加熱輥之溫度設定為室溫以上且未達結晶性高分子片材之熔點、例如70℃以上且135℃以下。此時,對連接於直流電源之非接觸之電極、與接地之加熱輥之間施加直流電壓,藉此同時進行結晶性高分子片材之延伸處理、與結晶性高分子片材之極化處理。The crystalline polymer sheet is fed to the conductive heating roller. The crystalline polymer sheet fed to the heating roller takes the extension direction as the MD direction, and is necked and stretched in the contact area with the heating roller. In order to effectively perform necking and stretching, the temperature of the heating roller is set to room temperature or higher and not reaching the melting point of the crystalline polymer sheet, for example, 70°C or higher and 135°C or lower. At this time, apply a DC voltage between the non-contact electrode connected to the DC power supply and the grounded heating roller, thereby simultaneously performing the elongation treatment of the crystalline polymer sheet and the polarization treatment of the crystalline polymer sheet .

再者,結晶性高分子片材之延伸倍率例如為2.5倍以上且6.0倍以下。若結晶性高分子片材之延伸倍率為2.5倍以上,則容易使頸縮延伸穩定。若結晶性高分子片材之延伸倍率為6.0倍以下,則容易抑制結晶性高分子片材、結晶性高分子薄膜中之斷裂。 (B)第1緩和製程In addition, the stretching ratio of the crystalline polymer sheet is, for example, 2.5 times or more and 6.0 times or less. If the stretch ratio of the crystalline polymer sheet is 2.5 times or more, it is easy to stabilize the necking stretch. If the stretch ratio of the crystalline polymer sheet is 6.0 times or less, it is easy to suppress breakage in the crystalline polymer sheet and the crystalline polymer film. (B) The first mitigation process

第1緩和製程係將薄膜形成製程中所形成之結晶性高分子薄膜進行加熱,藉此使結晶性高分子薄膜中之應變緩和,且使結晶性高分子薄膜熱固定之製程。熱固定後的結晶性高分子薄膜與熱固定前的結晶性高分子薄膜相比,於被施加伴隨加熱之處理之加工製程中不易產生熱收縮。作為將結晶性高分子薄膜進行加熱之方法,例如可使用使結晶性高分子薄膜曝露於熱風之方法、使結晶性高分子薄膜通過加熱輥之方法、及該等之組合。The first relaxation process is a process in which the crystalline polymer film formed in the film formation process is heated to relax the strain in the crystalline polymer film and heat-fix the crystalline polymer film. Compared with the crystalline polymer film before heat setting, the crystalline polymer film after heat setting is less prone to heat shrinkage during the processing process that is applied with heating treatment. As a method of heating the crystalline polymer film, for example, a method of exposing the crystalline polymer film to hot air, a method of passing the crystalline polymer film through a heating roller, and a combination thereof can be used.

第1緩和製程中之結晶性高分子薄膜之溫度為第1溫度。第1溫度係指90℃以上且115℃以下之溫度。第1緩和製程中之結晶性高分子薄膜之加熱時間例如為1分鐘以上且5分鐘以下。 (C)二次加熱製程The temperature of the crystalline polymer film in the first relaxation process is the first temperature. The first temperature refers to a temperature above 90°C and below 115°C. The heating time of the crystalline polymer film in the first relaxation process is, for example, 1 minute or more and 5 minutes or less. (C) Secondary heating process

二次加熱製程係使用熱固定後的結晶性高分子薄膜,作為用以提高結晶性高分子薄膜之耐熱性之加熱,將結晶性高分子薄膜再次加熱(再加熱),藉此由結晶性高分子薄膜形成壓電體薄膜之製程。作為將結晶性高分子薄膜再加熱之方法,例如可使用使結晶性高分子薄膜曝露於熱風之方法、使結晶性高分子薄膜通過加熱輥之方法、及該等之組合。The secondary heating process uses the heat-fixed crystalline polymer film as a heating to improve the heat resistance of the crystalline polymer film. The crystalline polymer film is heated again (reheated) to increase the crystallinity The process of forming a piezoelectric thin film from a molecular film. As a method of reheating the crystalline polymer film, for example, a method of exposing the crystalline polymer film to hot air, a method of passing the crystalline polymer film through a heating roller, and a combination thereof can be used.

二次加熱製程中之結晶性高分子薄膜之溫度為第2溫度。第2溫度係指第1溫度以上且140℃以下之溫度。因此,作為第2溫度之範圍,最廣範圍為90℃以上且140℃以下。二次加熱製程中之結晶性高分子薄膜之加熱時間為15秒以上且120秒以下,較佳為20秒以上且60秒以下。若第2溫度為140℃以下,則可抑制結晶性高分子薄膜軟化。再者,二次加熱製程中,較佳為對結晶性高分子薄膜,一面施加預定之張力,一面在第2溫度下進行加熱。若加熱時間為20秒以下,則無法獲得所期望之特性,若為120秒以上,則於結晶性高分子薄膜之耐久性方面產生制約。The temperature of the crystalline polymer film in the secondary heating process is the second temperature. The second temperature refers to a temperature above the first temperature and below 140°C. Therefore, as the second temperature range, the widest range is 90°C or more and 140°C or less. The heating time of the crystalline polymer film in the secondary heating process is 15 seconds or more and 120 seconds or less, preferably 20 seconds or more and 60 seconds or less. If the second temperature is 140°C or lower, softening of the crystalline polymer film can be suppressed. Furthermore, in the secondary heating process, it is preferable to apply a predetermined tension to the crystalline polymer film while heating at the second temperature. If the heating time is 20 seconds or less, the desired characteristics cannot be obtained, and if it is 120 seconds or more, there are restrictions on the durability of the crystalline polymer film.

此處,關於作為製品之壓電體薄膜,通常為了適於使用壓電體薄膜之後續之加工製程,捲取成捲狀,或者自捲筒抽出。此時,結晶性高分子薄膜與感測器等之加工製程相應對被抽出,與表面蒸鍍處理、乾式層壓處理等加工製程相應地被加熱。結果為,即便是熱固定後的結晶性高分子薄膜,結晶性高分子薄膜中亦會產生少許之熱收縮(產生後收縮),而使結晶性高分子薄膜之壓電常數d31降低。Here, as for the piezoelectric film as a product, it is usually wound into a roll or drawn from a roll in order to be suitable for the subsequent processing process of using the piezoelectric film. At this time, the crystalline polymer film and the sensor and other processing processes are extracted and heated in accordance with the surface vapor deposition process, dry lamination process and other processing processes. As a result, even if the crystalline polymer film is heat-fixed, a small amount of heat shrinkage (post-shrinkage) occurs in the crystalline polymer film, which reduces the piezoelectric constant d31 of the crystalline polymer film.

就該方面而言,上述之壓電體薄膜之製造方法中,將捲取成捲狀之結晶性高分子薄膜靜置後,對該結晶性高分子薄膜進行二次加熱製程。並且,捲成捲狀之結晶性高分子薄膜與二次加熱製程相應地被抽出,並在第1溫度以上且140℃以下被再加熱。結果為,壓電體薄膜於該二次加熱製程中預先矯正上述之加工製程中之收縮。再者,熱固定後的結晶性高分子薄膜中,開始後收縮之溫度因熱固定而既已上升。另一方面,二次加熱製程中,在該熱固定時之溫度以上將結晶性高分子薄膜再加熱。因此,即便開始後收縮之溫度因熱固定而上升,亦可矯正後收縮。 [壓電體薄膜之第2製造方法]In this respect, in the above-mentioned method of manufacturing a piezoelectric film, the crystalline polymer film wound into a roll is allowed to stand, and then the crystalline polymer film is subjected to a secondary heating process. In addition, the crystalline polymer film rolled into a roll is drawn out in accordance with the secondary heating process, and reheated at a temperature above the first temperature and below 140°C. As a result, the piezoelectric film is pre-corrected for shrinkage during the above-mentioned processing process during the secondary heating process. Furthermore, in the crystalline polymer film after heat setting, the temperature at which the shrinkage starts after the heat setting has already risen. On the other hand, in the secondary heating process, the crystalline polymer film is reheated above the temperature at the time of heat setting. Therefore, even if the temperature of the post-shrinkage starts to rise due to heat fixation, the post-shrinkage can be corrected. [The second manufacturing method of piezoelectric film]

壓電體薄膜之第2製造方法與第1製造方法同樣地,使用結晶性高分子片材作為起始原料。壓電體薄膜之第2製造方法包括(A)薄膜形成製程、及(B)第2緩和製程。再者,由於(A)薄膜形成製程與第1製造方法之薄膜形成製程相同,所以此處省略該薄膜形成製程之說明。以下,對(B)第2緩和製程詳細地進行說明。 (B)第2緩和製程The second manufacturing method of the piezoelectric thin film uses a crystalline polymer sheet as a starting material, as in the first manufacturing method. The second manufacturing method of the piezoelectric thin film includes (A) a thin film forming process, and (B) a second relaxation process. Furthermore, since (A) the thin film forming process is the same as the thin film forming process of the first manufacturing method, the description of the thin film forming process is omitted here. Hereinafter, (B) the second relaxation process will be described in detail. (B) The second mitigation process

第2製造方法中之第2緩和製程在將結晶性高分子薄膜加熱之方面為與第1緩和製程相同之處理,但結晶性高分子薄膜之溫度範圍不同。亦即,第2緩和製程中之結晶性高分子薄膜之溫度較佳為高於115℃且150℃以下之溫度,更佳為高於130℃且135℃以下。再者,第2緩和製程中之結晶性高分子薄膜之加熱時間例如較佳為10秒以上且140秒以下,更佳為20秒以上且140秒以下。The second relaxation process in the second manufacturing method is the same treatment as the first relaxation process in that the crystalline polymer film is heated, but the temperature range of the crystalline polymer film is different. That is, the temperature of the crystalline polymer film in the second relaxation process is preferably higher than 115°C and 150°C or lower, more preferably higher than 130°C and 135°C or lower. Furthermore, the heating time of the crystalline polymer film in the second relaxation process is, for example, preferably 10 seconds or more and 140 seconds or less, more preferably 20 seconds or more and 140 seconds or less.

第2緩和製程中之溫度只要為上述溫度範圍,則並無特別限定。但,若將結晶性高分子薄膜加熱之溫度為115℃以下,則如第1製造方法般,需要二次加熱製程。另外,若將結晶性高分子薄膜加熱之溫度為150℃以上,則於結晶性高分子薄膜之耐久性方面產生制約。The temperature in the second relaxation process is not particularly limited as long as it falls within the above-mentioned temperature range. However, if the temperature at which the crystalline polymer film is heated is 115°C or less, a secondary heating process is required as in the first manufacturing method. In addition, if the temperature at which the crystalline polymer film is heated is 150°C or higher, there are restrictions on the durability of the crystalline polymer film.

就該方面而言,若為進行第2緩和製程之第2製造方法,則亦可省略第1製造方法中所進行之(C)二次加熱製程。亦即,若為第2製造方法,則亦可不進行(C)二次加熱製程,而將外推起始溫度設為90℃以上且135℃以下。另外,可使藉由第2製造方法所獲得之結晶性高分子薄膜之壓電常數d31之衰減率降低。 [實施例1至8:第1製造方法]In this respect, if it is the second manufacturing method that performs the second relaxation process, the (C) secondary heating process performed in the first manufacturing method may be omitted. That is, if it is the second manufacturing method, the (C) secondary heating process may not be performed, and the extrapolation starting temperature may be 90° C. or more and 135° C. or less. In addition, the attenuation rate of the piezoelectric constant d31 of the crystalline polymer film obtained by the second manufacturing method can be reduced. [Examples 1 to 8: First manufacturing method]

使用厚度為100 µm之聚偏二氟乙烯(KUREHA股份有限公司製造KF#1100)之片材作為結晶性高分子片材,對結晶性高分子片材,進行頸縮延伸處理後,進行極化處理。此時,使結晶性高分子片材通過加熱至表面溫度120℃之加熱輥,使直流電壓自0 kV增加至20 kV,於延伸處理後進行極化處理。然後,獲得厚度為27 µm之實施例之結晶性高分子薄膜。A polyvinylidene fluoride (KF#1100 manufactured by KUREHA Co., Ltd.) sheet with a thickness of 100 µm is used as the crystalline polymer sheet, and the crystalline polymer sheet is subjected to necking extension treatment and then polarized deal with. At this time, the crystalline polymer sheet is passed through a heating roller heated to a surface temperature of 120°C, the DC voltage is increased from 0 kV to 20 kV, and polarization treatment is performed after the stretching treatment. Then, the crystalline polymer film of Example with a thickness of 27 µm was obtained.

接著,將第1溫度設定為100℃,且將加熱時間設定為10秒,對實施例之結晶性高分子薄膜,進行利用熱風之第1緩和製程。進而,將第1溫度設定為90℃,且將加熱時間設定為2分鐘,使曝露於熱風之結晶性高分子薄膜通過加熱滾筒,進行進一步之第1緩和製程。然後,將利用熱風及加熱滾筒之第1緩和製程後的結晶性高分子薄膜捲取成捲狀,在常溫下靜置3天。再者,利用熱風及加熱滾筒之第1緩和製程中,以對結晶性高分子薄膜之張力成為固定之方式,於第1緩和製程內之結晶性高分子薄膜之進給速度上設置差異。Next, the first temperature was set to 100°C and the heating time was set to 10 seconds, and the crystalline polymer film of the example was subjected to the first relaxation process using hot air. Furthermore, the first temperature was set to 90°C, the heating time was set to 2 minutes, and the crystalline polymer film exposed to hot air was passed through a heating roller to perform a further first relaxation process. Then, the crystalline polymer film after the first relaxation process using hot air and a heating roller was wound into a roll, and left to stand at room temperature for 3 days. Furthermore, in the first relaxation process using hot air and heating rollers, a difference is set in the feed rate of the crystalline polymer film in the first relaxation process in a way that the tension on the crystalline polymer film is fixed.

接下來,將第2溫度設定為90℃以上且130℃以下,且將加熱時間設定為20秒以上且60秒以下,對第1緩和製程後的結晶性高分子薄膜進行二次加熱製程。然後,變更第2溫度與加熱時間之任一者,獲得8種之實施例之壓電體薄膜。再者,實施例1之第2溫度為90℃,加熱時間為60秒。實施例2之第2溫度為100℃,加熱時間為60秒。實施例3之第2溫度為110℃,加熱時間為60秒。實施例4之第2溫度為120℃,加熱時間為60秒。實施例5之第2溫度為125℃,加熱時間為40秒。實施例6之第2溫度為125℃,加熱時間為60秒。實施例7之第2溫度為130℃,加熱時間為60秒。實施例8之第2溫度為130℃,加熱時間為20秒。另外,除不進行二次加熱製程以外,使用與實施例相同之條件,獲得比較例之壓電體薄膜。 [實施例9、10:第2製造方法]Next, the second temperature is set to 90° C. or more and 130° C. or less, and the heating time is set to 20 seconds or more and 60 seconds or less, and the crystalline polymer film after the first relaxation process is subjected to a secondary heating process. Then, any one of the second temperature and the heating time was changed to obtain eight kinds of piezoelectric thin films of the examples. In addition, the second temperature of Example 1 was 90°C, and the heating time was 60 seconds. The second temperature of Example 2 was 100°C, and the heating time was 60 seconds. The second temperature of Example 3 was 110°C, and the heating time was 60 seconds. The second temperature of Example 4 was 120°C, and the heating time was 60 seconds. The second temperature of Example 5 was 125°C, and the heating time was 40 seconds. The second temperature of Example 6 was 125°C, and the heating time was 60 seconds. The second temperature of Example 7 was 130°C, and the heating time was 60 seconds. The second temperature of Example 8 was 130°C, and the heating time was 20 seconds. In addition, except that the secondary heating process was not performed, the same conditions as in the example were used to obtain the piezoelectric thin film of the comparative example. [Examples 9, 10: Second manufacturing method]

使用實施例1至8中所使用之厚度為27 µm之實施例之結晶性高分子薄膜,將第2緩和製程中之加熱溫度設定為135℃,且將加熱時間設定為20秒,對結晶性高分子薄膜進行利用熱風之第2緩和製程。進而,將溫度設定為90℃,且將加熱時間設定為2分鐘,使曝露於熱風之結晶性高分子薄膜通過加熱滾筒,進行更低溫下之調溫製程。然後,除不進行二次加熱處理以外,以與實施例1至8相同之方式,獲得實施例9之壓電薄膜。另外,將實施例9中之加熱滾筒之溫度自90℃變更為120℃,將調溫製程設為第2緩和製程之延長,將除此以外之條件設為與實施例9相同,獲得實施例10之壓電薄膜。再者,實施例9、10中,第2緩和製程後的調溫製程抑制剛進行第2緩和製程後的結晶性高分子薄膜之急冷,抑制薄結晶性高分子薄膜因急冷而產生褶皺,抑制厚結晶性高分子薄膜因急冷而產生翹曲。Using the crystalline polymer film of the 27 µm-thickness example used in Examples 1 to 8, the heating temperature in the second relaxation process was set to 135°C and the heating time was set to 20 seconds. The polymer film undergoes the second relaxation process using hot air. Furthermore, the temperature was set to 90°C and the heating time was set to 2 minutes, and the crystalline polymer film exposed to hot air was passed through a heating roller to perform a temperature adjustment process at a lower temperature. Then, except that the secondary heating treatment was not performed, the piezoelectric film of Example 9 was obtained in the same manner as in Examples 1 to 8. In addition, the temperature of the heating roller in Example 9 was changed from 90°C to 120°C, the temperature adjustment process was set to the extension of the second relaxation process, and other conditions were set to be the same as in Example 9 to obtain an example 10 piezoelectric film. Furthermore, in Examples 9 and 10, the temperature adjustment process after the second relaxation process suppresses the rapid cooling of the crystalline polymer film immediately after the second relaxation process, and suppresses the wrinkles of the thin crystalline polymer film due to rapid cooling. The thick crystalline polymer film warps due to rapid cooling.

並且,針對實施例1至10之壓電體薄膜、及比較例之壓電體薄膜,基於以下之條件,測定外推起始溫度、壓電常數d31、及壓電常數d31之衰減率。 [試片]In addition, for the piezoelectric thin films of Examples 1 to 10 and the piezoelectric thin films of Comparative Examples, the extrapolation starting temperature, the piezoelectric constant d31, and the attenuation rate of the piezoelectric constant d31 were measured based on the following conditions. [Audition]

於各實施例、及比較例之壓電體薄膜之表面及背面,藉由蒸鍍法形成厚度為100 nm以上且800 nm以下之鋁電極。接著,作為壓電常數測定用之樣品,自形成有鋁電極之壓電體薄膜切取具有7 mm×30 mm之尺寸之試片。另外,作為外推起始溫度測定用之樣品,自壓電體薄膜切取具有3 mm×60 mm之尺寸之試片。 [壓電常數d31之測定]On the front and back surfaces of the piezoelectric thin films of the respective Examples and Comparative Examples, aluminum electrodes with a thickness of 100 nm or more and 800 nm or less were formed by an evaporation method. Next, as a sample for measuring the piezoelectric constant, a test piece with a size of 7 mm×30 mm was cut from the piezoelectric thin film on which the aluminum electrode was formed. In addition, as a sample for extrapolating the initial temperature measurement, a test piece with a size of 3 mm×60 mm was cut from the piezoelectric film. [Measurement of piezoelectric constant d31]

使用各實施例及比較例之試片,在以下之條件下測定壓電常數d31。 ・測定裝置 Rheolograph-Solid(東洋精機製作所股份有限公司製造) ・測定溫度 23℃ ・測定周波數 10 Hz ・施加張力 1 N [外推起始溫度之測定]Using the test pieces of the respective examples and comparative examples, the piezoelectric constant d31 was measured under the following conditions. ・Measuring device Rheolograph-Solid (manufactured by Toyo Seiki Seisakusho Co., Ltd.) ・Measuring temperature 23℃ ・Measuring frequency 10 Hz ・Applying tension 1 N [Extrapolation of starting temperature measurement]

使用各實施例及比較例之試片(3 mm×60 mm),在以下之條件下測定熱收縮行為,基於所得測定結果,測定外推起始溫度。 ・測定裝置 EXSTAR6000(Seiko Instruments股份有限公司製造) ・起始溫度 30℃ ・結束溫度 150℃ ・升溫速度 2℃/分鐘 ・測定間隔 1秒 [壓電常數d31之衰減率測定]Using the test pieces (3 mm×60 mm) of each Example and Comparative Example, the thermal shrinkage behavior was measured under the following conditions, and the extrapolated starting temperature was measured based on the obtained measurement results. ・Measuring device EXSTAR6000 (manufactured by Seiko Instruments Co., Ltd.) ・Starting temperature 30℃ ・Finishing temperature 150℃ ・Rising rate 2℃/min ・Measurement interval 1 second [Measurement of attenuation rate of piezoelectric constant d31]

對實施例1至10及比較例之試片進行以下之試驗處理,測定試驗前的壓電常數d31、及試驗後的壓電常數d31。然後,算出相對於試驗處理前的壓電常數d31之試驗處理後的壓電常數d31之衰減率。衰減率係試驗處理前後的壓電常數d31之差相對於試驗處理前的壓電常數d31之比率。 ・試驗溫度 100℃ ・試驗時間 24小時 ・試驗裝置恆溫器 HT320(楠本化成股份有限公司製造)The test pieces of Examples 1 to 10 and Comparative Examples were subjected to the following test treatments, and the piezoelectric constant d31 before the test and the piezoelectric constant d31 after the test were measured. Then, the attenuation rate of the piezoelectric constant d31 after the test process relative to the piezoelectric constant d31 before the test process is calculated. The attenuation rate is the ratio of the difference between the piezoelectric constant d31 before and after the test process to the piezoelectric constant d31 before the test process. ・Test temperature 100℃ ・Test time 24 hours ・Test device thermostat HT320 (manufactured by Kusumoto Chemical Co., Ltd.)

實施例1至10及比較例中之製造方法之種類、二次加熱製程之處理條件之詳情、第2緩和製程之處理條件之詳情、外推起始溫度、壓電常數d31、壓電常數d31之衰減率示於表1。另外,實施例1至10及比較例中外推起始溫度與壓電常數d31之衰減率之關係示於圖1。再者,表1中,將第1製造方法記為「(1)」,將第2製造方法記為「(2)」。並且,使用第1製造方法之實施例1至8之各者中,作為熱處理條件,表示二次加熱製程之處理條件,使用第2製造方法之實施例9、10中,作為熱處理條件,表示第2緩和製程之處理條件。 表1

Figure 107141621-A0304-0001
Types of manufacturing methods in Examples 1 to 10 and Comparative Examples, details of processing conditions in the secondary heating process, details of processing conditions in the second relaxation process, extrapolated starting temperature, piezoelectric constant d31, piezoelectric constant d31 The attenuation rate is shown in Table 1. In addition, the relationship between the extrapolated starting temperature and the attenuation rate of the piezoelectric constant d31 in Examples 1 to 10 and the comparative example is shown in FIG. 1. In addition, in Table 1, the first manufacturing method is described as "(1)", and the second manufacturing method is described as "(2)". In addition, in each of Examples 1 to 8 using the first manufacturing method, as the heat treatment condition, the treatment condition of the secondary heating process is shown, and in the examples 9 and 10 using the second manufacturing method, the heat treatment condition is shown as the heat treatment condition. 2 ease the processing conditions of the manufacturing process. Table 1
Figure 107141621-A0304-0001

如表1所示,確認到比較例之壓電體薄膜中,試驗前的壓電常數d31為27.9 pC/N,試驗後的壓電常數d31為21.6 pC/N,外推起始溫度為84.8℃,壓電常數d31之衰減率為22.6%。相對於此,確認到經過二次加熱製程之壓電體薄膜(實施例1至8)中,試驗後的壓電常數d31為22.8 pC/N以上且26.1 pC/N以下,外推起始溫度為較高之92.3℃以上,且衰減率為較低之17.8%以下。另外,確認到第2緩和製程中之加熱溫度設為135℃且不進行二次加熱製程之實施例9之壓電體薄膜中,試驗後的壓電常數d31為較實施例1至8高之26.8 pC/N,實施例10之壓電體薄膜中,試驗後的壓電常數d31為較實施例1至4、7、8高之25.3 pC/N。另外,確認到實施例9、10之壓電體薄膜之外推起始溫度為較高之98.8℃以上,且衰減率為較低之7.3%以下。亦即,確認到實施例1至10滿足[條件1][條件2][條件3]。As shown in Table 1, it was confirmed that in the piezoelectric film of the comparative example, the piezoelectric constant d31 before the test was 27.9 pC/N, the piezoelectric constant d31 after the test was 21.6 pC/N, and the extrapolation starting temperature was 84.8 ℃, the attenuation rate of piezoelectric constant d31 is 22.6%. In contrast, it was confirmed that the piezoelectric constant d31 after the test was 22.8 pC/N or more and 26.1 pC/N or less in the piezoelectric thin film (Examples 1 to 8) after the secondary heating process, and the starting temperature was extrapolated It is higher than 92.3℃, and the attenuation rate is lower than 17.8%. In addition, it was confirmed that in the piezoelectric film of Example 9 where the heating temperature in the second relaxation process was set to 135°C and the secondary heating process was not performed, the piezoelectric constant d31 after the test was higher than that of Examples 1 to 8. 26.8 pC/N. In the piezoelectric film of Example 10, the piezoelectric constant d31 after the test is 25.3 pC/N, which is higher than that of Examples 1 to 4, 7, and 8. In addition, it was confirmed that the extrapolation starting temperature of the piezoelectric thin films of Examples 9 and 10 was higher than 98.8°C, and the attenuation rate was lower than 7.3%. That is, it was confirmed that Examples 1 to 10 satisfy [Condition 1] [Condition 2] [Condition 3].

另外,如表1及圖1所示,實施例1至10中,確認到外推起始溫度越高,則衰減率越低之傾向。再者,亦確認到二次加熱製程中之第2溫度越高,另外,二次加熱製程中之加熱時間越長,則外推起始溫度大致越低,另外,衰減率亦大致越低之傾向。尤其是,確認到在二次加熱製程中之第2溫度為125℃之條件下,外推起始溫度為非常高之110℃以上,另外,衰減率為非常低之未達10%。進而,確認到實施例9、10中,藉由於第2緩和製程中在135℃之高溫下進行處理,可使衰減率大幅降低。In addition, as shown in Table 1 and FIG. 1, in Examples 1 to 10, it was confirmed that the higher the extrapolation starting temperature, the lower the attenuation rate. Furthermore, it is confirmed that the second temperature in the secondary heating process is higher. In addition, the longer the heating time in the secondary heating process, the lower the extrapolation starting temperature, and the lower the attenuation rate. tendency. In particular, it was confirmed that under the condition that the second temperature in the secondary heating process is 125°C, the extrapolation starting temperature is very high above 110°C, and the attenuation rate is very low, less than 10%. Furthermore, it was confirmed that in Examples 9 and 10, the attenuation rate can be significantly reduced by processing at a high temperature of 135°C in the second relaxation process.

以上,根據上述實施形態,獲得以下之效果。 (1) 壓電體薄膜之加工時,即便對壓電體薄膜進行加熱,亦可抑制因加工所致之壓電常數d31之降低。 (2) 由於可確保壓電常數d31之衰減率為20%以下,所以與僅由[條件1][條件2]特定出壓電體薄膜之構成相比,可更確實地抑制因加工所致之壓電常數d31之降低。 (3) 構成壓電體薄膜之氟樹脂為偏二氟乙烯之均聚物之構成與為偏二氟乙烯之共聚物之構成相比,亦容易提高壓電體薄膜之壓電常數d31。 (4) 若為第1溫度與第2溫度相互相等之方法,則亦可實現用以在第1溫度下進行加熱之設備與用以在第2溫度下進行加熱之設備之共用。As described above, according to the above-mentioned embodiment, the following effects are obtained. (1) During the processing of the piezoelectric film, even if the piezoelectric film is heated, the decrease in the piezoelectric constant d31 due to the processing can be suppressed. (2) Since the attenuation rate of the piezoelectric constant d31 can be ensured to be 20% or less, it is possible to more reliably suppress the processing caused by the composition of the piezoelectric film specified by [Condition 1] [Condition 2] The piezoelectric constant d31 is reduced. (3) The fluororesin that composes the piezoelectric film is a homopolymer of vinylidene fluoride. Compared with the structure of a copolymer of vinylidene fluoride, it is easier to increase the piezoelectric constant d31 of the piezoelectric film. (4) If the first temperature and the second temperature are equal to each other, the equipment used for heating at the first temperature and the equipment used for heating at the second temperature can also be shared.

再者,上述實施形態亦可以如下方式進行變更而實施。 ・ 第1緩和製程中,亦可使用相互不同之第1溫度,在各第1溫度下,採用分別之加熱方法。另外,第1緩和製程中,亦可使用相互相等之第1溫度,在各第1溫度下,採用分別之加熱方法。 ・ 二次加熱製程中,亦可使用相互不同之第2溫度,在各第2溫度下,採用分別之加熱方法。另外,二次加熱製程中,亦可使用相互相等之第2溫度,在各第2溫度下,採用分別之加熱方法。 ・ 在緩和製程與二次加熱製程之間,結晶性高分子薄膜之室溫下之保管之形態並不限於捲繞成捲狀之狀態下之保管,例如亦可設為於預定之載置面上重疊載置之狀態下之保管。 ・ 第2緩和製程中,亦可在高於115℃且150℃以下之溫度下,使用相互不同之加熱溫度,在各加熱溫度下,採用分別之加熱方法、分別之加熱時間。另外,第2緩和製程中,亦可在高於115℃且150℃以下之溫度下,使用相互相等之加熱溫度,在各加熱溫度下,採用分別之加熱方法及分別之加熱時間。In addition, the above-mentioned embodiment can also be changed and implemented as follows. ・ In the first relaxation process, different first temperatures can also be used, and separate heating methods are used at each first temperature. In addition, in the first relaxation process, mutually equal first temperatures may also be used, and a separate heating method may be used at each first temperature. ・ In the secondary heating process, different second temperatures can also be used. At each second temperature, separate heating methods are used. In addition, in the secondary heating process, second temperatures that are equal to each other can also be used, and separate heating methods are used at each second temperature. ・ Between the relaxation process and the secondary heating process, the storage form of the crystalline polymer film at room temperature is not limited to the storage in the state of being wound into a roll. For example, it can be set on a predetermined placement surface Keep it in a state where it is stacked on top. ・ In the second mitigation process, it is also possible to use different heating temperatures at a temperature higher than 115℃ and below 150℃. At each heating temperature, use separate heating methods and separate heating times. In addition, in the second mitigation process, it is also possible to use mutually equal heating temperatures at a temperature higher than 115°C and less than 150°C, and use separate heating methods and separate heating times at each heating temperature.

[圖1]係表示各實施例及比較例中之外推起始溫度與壓電常數d31之關係的圖表。[Fig. 1] is a graph showing the relationship between the extrapolation starting temperature and the piezoelectric constant d31 in each example and comparative example.

Claims (6)

一種壓電體薄膜,含有氟樹脂作為壓電材料,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元,並且前述壓電體薄膜之壓電常數d31為20pC/N以上,且藉由TMA測定所求出之收縮開始之外推起始溫度為90℃以上且135℃以下,將前述壓電體薄膜在100℃下加熱24小時之處理為試驗處理,前述試驗處理之前後所測定之壓電常數d31之差相對於前述試驗處理前的壓電常數d31為20%以下。 A piezoelectric film containing a fluororesin as a piezoelectric material, the fluororesin contains a repeating unit derived from vinylidene fluoride as a main structural unit, and the piezoelectric constant d31 of the piezoelectric film is 20pC/N or more, and The extrapolation starting temperature of shrinkage obtained by TMA measurement is 90°C or more and 135°C or less, and the piezoelectric film is heated at 100°C for 24 hours as a test treatment. The difference in the measured piezoelectric constant d31 is 20% or less with respect to the piezoelectric constant d31 before the aforementioned test treatment. 如申請專利範圍第1項所述之壓電體薄膜,其中前述氟樹脂為偏二氟乙烯之均聚物。 The piezoelectric film described in the first item of the patent application, wherein the aforementioned fluororesin is a homopolymer of vinylidene fluoride. 一種壓電體薄膜之製造方法,包括:薄膜形成製程,對由氟樹脂形成之片材,進行延伸處理及極化處理,藉此形成具有壓電性之結晶性高分子薄膜,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元;緩和製程,90℃以上且115℃以下為第1溫度,將前述結晶性高分子薄膜在前述第1溫度下加熱5秒以上且130秒以下,藉此對前述結晶性高分子薄膜,進行熱固定及殘留應變之緩和;及二次加熱製程,將前述緩和製程後的前述結晶性高分子薄膜在前述第1溫度以上且140℃以下進而再加熱15秒以上且120秒以下而製造壓電體薄膜。 A method for manufacturing a piezoelectric thin film includes: a thin film forming process, stretching and polarization processing a sheet formed of a fluororesin, thereby forming a crystalline polymer thin film with piezoelectricity. The fluororesin includes Repeating units derived from vinylidene fluoride as the main structural unit; to ease the process, 90°C or more and 115°C or less is the first temperature, and the aforementioned crystalline polymer film is heated at the aforementioned first temperature for 5 seconds or more and 130 seconds or less By this, the crystalline polymer film is thermally fixed and the residual strain is relieved; and a secondary heating process is used to heat the crystalline polymer film after the relaxation process at the first temperature or higher and 140°C or lower. The piezoelectric film is manufactured by heating for 15 seconds or more and 120 seconds or less. 如申請專利範圍第3項所述之壓電體薄膜之製造方法,其中 前述二次加熱製程係將前述結晶性高分子薄膜在前述第1溫度下進行加熱。 The manufacturing method of piezoelectric thin film as described in item 3 of the scope of patent application, wherein In the secondary heating process, the crystalline polymer film is heated at the first temperature. 一種壓電體薄膜之製造方法,其係由結晶性高分子片材製造壓電體薄膜之方法,且包括:薄膜形成製程,對由氟樹脂形成之片材,進行延伸處理及極化處理,藉此形成具有壓電性之結晶性高分子薄膜,前述氟樹脂包含源自偏二氟乙烯之重複單元作為主要結構單元;及緩和製程,在高於115℃且150℃以下之溫度下將前述結晶性高分子薄膜加熱10秒以上且140秒以下,藉此對前述結晶性高分子薄膜,進行熱固定及殘留應變之緩和。 A method for manufacturing a piezoelectric film, which is a method of manufacturing a piezoelectric film from a crystalline polymer sheet, and includes: a film forming process, stretching and polarization processing the sheet formed of fluororesin, By this, a crystalline polymer film with piezoelectricity is formed. The fluororesin contains repeating units derived from vinylidene fluoride as the main structural unit; and the process is relaxed, and the aforementioned fluororesin is heated at a temperature higher than 115°C and below 150°C. The crystalline polymer film is heated for 10 seconds or more and 140 seconds or less to thermally fix the crystalline polymer film and alleviate residual strain. 一種壓電體元件,具備如申請專利範圍第1或2項所述之壓電體薄膜。 A piezoelectric element is provided with the piezoelectric thin film as described in item 1 or 2 of the scope of patent application.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493235A (en) * 2011-12-13 2014-01-01 三井化学株式会社 Polymeric piezoelectric material and method for manufacturing same
JP2015111640A (en) * 2013-10-29 2015-06-18 ダイキン工業株式会社 Method for producing piezoelectric film
JP2015171100A (en) * 2014-03-10 2015-09-28 株式会社クレハ Wave receiving type piezoelectric element
US20150322220A1 (en) * 2014-05-12 2015-11-12 University Of Ulsan Foundation For Industry Cooperation Ultrasonic transducer using ferroelectric polymer
TWI514585B (en) * 2010-05-07 2015-12-21 Japan Science & Tech Agency A manufacturing method of a functional element, a thin film transistor, and a piezoelectric ink jet head

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157801A (en) 1979-04-26 1980-12-08 Rikagaku Kenkyusho Process for producing piezooelectric current collecting high molecular film
FR2525820A1 (en) * 1982-04-26 1983-10-28 Solvay Procedure for production of piezoelectric and pyroelectric films - by electrical polarisation of polyvinylidene fluoride films
EP0118757A3 (en) 1983-02-10 1987-10-07 Daikin Kogyo Co., Ltd. Polymeric ferro-electric material
EP0174838A3 (en) 1984-09-11 1989-08-02 Focas Limited Stabilized piezoelectric vinylidene fluoride polymers
US4668449A (en) 1984-09-11 1987-05-26 Raychem Corporation Articles comprising stabilized piezoelectric vinylidene fluoride polymers
JP2539428B2 (en) * 1987-05-12 1996-10-02 ソニー株式会社 Method for producing piezoelectric polymer film
GB8714259D0 (en) * 1987-06-18 1987-07-22 Cogent Ltd Piezoelectric polymer transducers
CA2032015A1 (en) * 1990-12-11 1992-06-12 Martin Perlman Method to double the piezo - and pyroelectric constants of polyvinylinde fluoride (pvdf) films
JP5078362B2 (en) 2007-01-10 2012-11-21 株式会社クレハ Method for producing polymer piezoelectric film and polymer piezoelectric film
US20120004555A1 (en) * 2009-03-18 2012-01-05 Konica Minolta Medical & Graphic, Inc. Method of stretching organic piezoelectric material, method of manufacturing organic piezoelectric material, ultrasonic transducer, ultrasonic wave probe and ultrasonic wave medical image diagnosis device
JP5291551B2 (en) * 2009-06-26 2013-09-18 株式会社クレハ Polymer composition and polymer piezoelectric film
JP5617069B2 (en) * 2009-10-09 2014-11-05 国立大学法人九州工業大学 Speaker
JP5714235B2 (en) 2010-03-11 2015-05-07 株式会社クレハ Additive-free and non-stretched piezoelectric body and PV sensor containing PVDF
CN201804553U (en) * 2010-06-18 2011-04-20 华南理工大学 Flexible integrated ultrasonic transducer
JP2013162051A (en) * 2012-02-07 2013-08-19 Sumitomo Electric Ind Ltd Piezoelectric element made of fluororesin film and manufacturing method therefor
JP5878033B2 (en) * 2012-02-07 2016-03-08 住友電気工業株式会社 Fluororesin film piezoelectric element
JP2014056915A (en) * 2012-09-12 2014-03-27 Chiba Univ Piezoelectric material made of graphene containing polyvinylidene fluoride film
JP2015075968A (en) 2013-10-09 2015-04-20 ダイキン工業株式会社 Method for manufacturing transparent piezoelectric panel
WO2015064327A1 (en) * 2013-10-29 2015-05-07 ダイキン工業株式会社 Film
US20160016369A1 (en) * 2014-05-21 2016-01-21 University Of South Carolina Novel Additive Manufacturing-Based Electric Poling Process of PVDF Polymer for Piezoelectric Device Applications

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI514585B (en) * 2010-05-07 2015-12-21 Japan Science & Tech Agency A manufacturing method of a functional element, a thin film transistor, and a piezoelectric ink jet head
CN103493235A (en) * 2011-12-13 2014-01-01 三井化学株式会社 Polymeric piezoelectric material and method for manufacturing same
JP2015111640A (en) * 2013-10-29 2015-06-18 ダイキン工業株式会社 Method for producing piezoelectric film
JP2015171100A (en) * 2014-03-10 2015-09-28 株式会社クレハ Wave receiving type piezoelectric element
US20150322220A1 (en) * 2014-05-12 2015-11-12 University Of Ulsan Foundation For Industry Cooperation Ultrasonic transducer using ferroelectric polymer

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