TWI711195B - Multi-layer piezoelectric ceramic element and method of manufacturing the same - Google Patents
Multi-layer piezoelectric ceramic element and method of manufacturing the same Download PDFInfo
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本發明係有關一種多層壓電陶瓷元件及其製造方法,特別是關於一種以低溫製程條件形成的多層壓電陶瓷元件。The invention relates to a multilayer piezoelectric ceramic element and a manufacturing method thereof, and particularly relates to a multilayer piezoelectric ceramic element formed under low-temperature processing conditions.
使用傳統多層共燒製程形成的多層壓電陶瓷元件包含以下步驟。將陶瓷原料混合並研磨成微細粉末。使粉末成型並經由沖模形成陶瓷生胚薄片。之後,利用印刷或蝕刻技術,形成電極圖案於不同之陶瓷生胚薄片上。將具有電極圖案的多個陶瓷生胚薄片堆疊在一起,並予以壓合。將壓合後陶瓷生胚薄片切割出大小相同之單位基板並進行高溫燒結。The multilayer piezoelectric ceramic element formed by the traditional multilayer co-firing process includes the following steps. The ceramic raw materials are mixed and ground into fine powder. The powder is molded and a ceramic green sheet is formed through a die. Afterwards, using printing or etching techniques, electrode patterns are formed on different ceramic green sheets. A plurality of ceramic green sheets with electrode patterns are stacked together and pressed together. The laminated ceramic green sheet is cut into unit substrates of the same size and sintered at high temperature.
然而,高溫燒結的製程容易產生一些問題。例如高燒結溫度容易使多層壓電陶瓷元件中的電極材料氧化,而且電極材料可能會擴散至陶瓷中,導致多層壓電陶瓷元件的性能下降。此外,更可能造成尺寸大小不一或成品之良率不穩定的問題。However, the high-temperature sintering process is prone to some problems. For example, a high sintering temperature easily oxidizes the electrode material in the multilayer piezoelectric ceramic component, and the electrode material may diffuse into the ceramic, resulting in a decrease in the performance of the multilayer piezoelectric ceramic component. In addition, it is more likely to cause problems of different sizes or unstable yield of finished products.
根據本發明之多個實施方式,係提供一種製造多層壓電陶瓷元件的方法,包含:提供陶瓷熟胚,陶瓷熟胚具有頂面、底面、第一側面及第二側面,第二側面相對於該第一側面。形成第一溝槽,自第一側面向內延伸,兩相鄰的第一溝槽間不互相連通。形成第一內部電極於第一溝槽內,第一內部電極由第一側面向內延伸。形成第二溝槽,自第二側面向內延伸,兩相鄰的第二溝槽間不互相連通,且第一溝槽與第二溝槽交疊且交錯設置。形成第二內部電極於第二溝槽內。形成第一外部電極電性連接第一內部電極。形成第二外部電極電性連接第二內部電極。According to various embodiments of the present invention, there is provided a method for manufacturing a multilayer piezoelectric ceramic element, including: providing a ceramic cooked embryo, the ceramic cooked embryo having a top surface, a bottom surface, a first side surface, and a second side surface, and the second side surface is opposite to The first side. A first groove is formed, extending inward from the first side surface, and two adjacent first grooves are not connected to each other. A first internal electrode is formed in the first trench, and the first internal electrode extends inward from the first side surface. A second groove is formed, extending inward from the second side surface, two adjacent second grooves are not connected to each other, and the first groove and the second groove are overlapped and arranged in a staggered manner. A second internal electrode is formed in the second trench. The first external electrode is formed to be electrically connected to the first internal electrode. The second external electrode is formed to be electrically connected to the second internal electrode.
在某些實施方式中,陶瓷熟胚包含鈦酸鋇、鋯鈦酸鉛、鋯鈦酸鉛鑭或氧化鋯。In some embodiments, the ceramic cooked embryo comprises barium titanate, lead zirconate titanate, lead lanthanum zirconate titanate, or zirconium oxide.
在某些實施方式中,形成第一內部電極及第二內部電極的步驟包含:填入電極膠於第一溝槽中並乾燥、及固化。填入電極膠於第二溝槽中並乾燥、及固化。In some embodiments, the step of forming the first internal electrode and the second internal electrode includes: filling electrode glue in the first groove, drying, and curing. Fill the electrode glue in the second groove, dry and solidify.
在某些實施方式中,形成第一溝槽或形成第二溝槽的步驟包含使用切割製程,切割製程包含使用水刀、超音波刀具、鑽石刀、金剛線或其組合。In some embodiments, the step of forming the first groove or forming the second groove includes using a cutting process, and the cutting process includes using a water jet, an ultrasonic knife, a diamond knife, a diamond wire, or a combination thereof.
在某些實施方式中,超音波刀具包含多個刀片,各刀片具有平面結構、弧面結構、曲折狀結構或不規則狀結構。In some embodiments, the ultrasonic tool includes a plurality of blades, and each blade has a planar structure, a curved surface structure, a zigzag structure, or an irregular structure.
在某些實施方式中,乾燥電極膠的溫度介於60℃至750℃。In some embodiments, the temperature for drying the electrode glue is between 60°C and 750°C.
在某些實施方式中,電極膠包含至少一種金屬,金屬為銀、銅、金或鋁。In some embodiments, the electrode paste includes at least one metal, and the metal is silver, copper, gold or aluminum.
本發明之多個實施方式,係提供一種多層壓電陶瓷元件,包含;陶瓷主體、第一內部電極、第二內部電極、第一外部電極及第二外部電極。陶瓷主體具有頂面、底面、第一側面、第二側面、第一溝槽及第二溝槽。第二側面相對於第一側面。第一溝槽由第一側面向內延伸,兩相鄰的第一溝槽間不互相連通。第二溝槽由第二側面向內延伸,兩相鄰的第二溝槽間不互相連通,且第一溝槽與第二溝槽交疊且交錯設置,其中第一溝槽及第二溝槽係經由超音波加工而形成,且第一溝槽及第二溝槽的深寬比介於1至50。第一內部電極位於第一溝槽內且填滿第一溝槽。第二內部電極位於第二溝槽內且填滿第二溝槽。第一外部電極配置於第一側面上及頂面上。第二外部電極配置於第二側面上及底面上。Various embodiments of the present invention provide a multilayer piezoelectric ceramic element, including: a ceramic body, a first internal electrode, a second internal electrode, a first external electrode, and a second external electrode. The ceramic body has a top surface, a bottom surface, a first side surface, a second side surface, a first groove, and a second groove. The second side is opposite to the first side. The first groove extends inward from the first side surface, and two adjacent first grooves are not connected to each other. The second groove extends inward from the second side surface, two adjacent second grooves are not connected to each other, and the first groove and the second groove are overlapped and arranged in a staggered manner, wherein the first groove and the second groove The groove is formed by ultrasonic processing, and the aspect ratio of the first groove and the second groove is between 1-50. The first internal electrode is located in the first trench and fills the first trench. The second internal electrode is located in the second trench and fills the second trench. The first external electrode is disposed on the first side surface and the top surface. The second external electrode is disposed on the second side surface and the bottom surface.
在某些實施方式中,第一內部電極及第二內部電極各包含第一曲面,且第一曲面具有曲率半徑,曲率半徑介於1×10-6 公尺至1公尺。In some embodiments, the first internal electrode and the second internal electrode each include a first curved surface, and the first curved surface has a radius of curvature ranging from 1×10 −6 meters to 1 meter.
在某些實施方式中,陶瓷主體包含鈦酸鋇、鋯鈦酸鉛、鋯鈦酸鉛鑭或氧化鋯。In certain embodiments, the ceramic body comprises barium titanate, lead zirconate titanate, lead lanthanum zirconate titanate, or zirconium oxide.
藉由上述實施方式,可以在低溫環境之下形成多層壓電陶瓷元件,進而避免電極膠體中的金屬擴散至陶瓷中而影響多層壓電陶瓷元件的性能,或避免高溫環境下使電極膠體氧化。為使本發明之上述及其他目的、特徵和優點更明顯易懂,下文特舉出較佳實施例,並配合所附圖式詳細說明如下。Through the above-mentioned embodiments, the multilayer piezoelectric ceramic element can be formed in a low temperature environment, thereby preventing the metal in the electrode colloid from diffusing into the ceramic and affecting the performance of the multilayer piezoelectric ceramic element, or avoiding oxidation of the electrode colloid in a high temperature environment. In order to make the above and other objectives, features, and advantages of the present invention more obvious and understandable, the following specifically enumerates preferred embodiments, which are described in detail in conjunction with the accompanying drawings.
以下將詳細討論本實施例的製造與使用,然而,應瞭解到,本發明提供實務的創新概念,其中可以用廣泛的各種特定內容呈現。下文敘述的實施方式或實施例僅為說明,並不能限制本發明的範圍。The manufacture and use of this embodiment will be discussed in detail below. However, it should be understood that the present invention provides practical innovative concepts, which can be presented with a wide variety of specific content. The embodiments or examples described below are merely illustrative, and cannot limit the scope of the present invention.
此外,在本文中,為了易於描述圖式所繪的某個元件或特徵和其他元件或特徵的關係,可能會使用空間相對術語,例如「在…下方」、「在…下」、「低於」、「在…上方」、「高於」和類似用語。這些空間相對術語意欲涵蓋元件使用或操作時的所有不同方向,不只限於圖式所繪的方向而已。裝置可以其他方式定向(旋轉90度或定於另一方向),而本文使用的空間相對描述語則可相應地進行解讀。In addition, in this article, in order to easily describe the relationship between a certain element or feature drawn in the diagram and other elements or features, spatial relative terms, such as "below", "below", "below" "", "above", "above" and similar terms. These spatially relative terms are intended to cover all different directions when the element is used or operated, and are not limited to the directions drawn in the drawings. The device can be oriented in other ways (rotated by 90 degrees or set in another direction), and the spatial relative descriptors used herein can be interpreted accordingly.
以下提供各種關於多層壓電陶瓷元件及其製作方法的實施例,其中詳細說明此多層壓電陶瓷元件的結構及性質,以及此多層壓電陶瓷元件的製造步驟。Various embodiments of the multilayer piezoelectric ceramic element and the manufacturing method thereof are provided below, in which the structure and properties of the multilayer piezoelectric ceramic element and the manufacturing steps of the multilayer piezoelectric ceramic element are described in detail.
第1圖為根據某些實施方式之多層壓電陶瓷元件的製造方法100的流程圖。如第1圖所示,方法10包含步驟S11、步驟S12、步驟S13、步驟S14、步驟S15及步驟S16。可以理解的是,可以在方法10之前、期間或之後提供額外的步驟,而且某些下述之步驟能被取代或刪除,作為製造方法的額外實施方式。FIG. 1 is a flowchart of a method 100 for manufacturing a multilayer piezoelectric ceramic element according to some embodiments. As shown in Figure 1, the
第2A-2F圖繪示根據本發明某些實施方式之製備多層壓電陶瓷元件之各製程階段的剖面示意圖。請參照第1圖及第2A圖,方法10開始於步驟S11,提供陶瓷熟胚。如第2A圖所示,根據本發明某些實施方式,陶瓷熟胚210包含頂面210a、底面210b、第一側面210c及第二側面210d。第二側面210d相對於第一側面210c。Figures 2A-2F show schematic cross-sectional views of various process stages for preparing multilayer piezoelectric ceramic components according to some embodiments of the present invention. Please refer to FIG. 1 and FIG. 2A, the
在某些實施例中,陶瓷熟胚包含壓電材料,壓電材料可例如為鈦酸鋇、鋯鈦酸鉛、鋯鈦酸鉛鑭、鈦酸鉍鈉或其他可作為多層壓電陶瓷元件之任何陶瓷材料。In some embodiments, the ceramic preforms contain piezoelectric materials. The piezoelectric materials can be, for example, barium titanate, lead zirconate titanate, lead lanthanum zirconate titanate, sodium bismuth titanate, or other multilayer piezoelectric ceramic components. Any ceramic material.
請參照第1圖及第2B圖,方法10進行至步驟S12,形成第一溝槽,自第一側面向內延伸,兩相鄰的第一溝槽間不互相連通。根據本發明某些實施方式,如第2B圖所示,形成第一溝槽220於陶瓷熟胚210內,第一溝槽220由第一側面210c朝第二側面210d延伸。在某些實施例中,形成第一溝槽220的方法包含使用切割製程,切割製程包含使用水刀、超音波刀具、鑽石刀、金剛線或其組合。在某些實施例中,第一溝槽220相互平行且各第一溝槽220相對於第一側面210c具有相同的深度。Referring to FIGS. 1 and 2B, the
請參照第1圖及第2C圖,方法10進行至步驟S13,形成第一內部電極於第一溝槽內,第一內部電極由第一側面朝第二側面延伸。如第2C圖所示,填入電極膠222於第一溝槽220中並進行乾燥、及固化(curing),形成第一內部電極224。在一實施例中,電極膠222包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在另一實施例中,電極膠的乾燥溫度介於60℃至750℃,例如100℃、200℃、300℃、400℃、500℃、600℃或700℃。Referring to FIG. 1 and FIG. 2C, the
若使用低溫電極膠,可在60℃至400℃進行乾燥及固化。若使用高溫電極膠,雖然高溫電極膠可接受的乾燥及固化溫度高達900℃以上,但較佳需控制在不高於750℃的溫度。因過高的溫度,例如900℃,會造成電極膠中的部分高分子裂解而導致後續形成的電極的緻密度降低。If low-temperature electrode glue is used, it can be dried and cured at 60°C to 400°C. If the high temperature electrode glue is used, although the acceptable drying and curing temperature of the high temperature electrode glue is as high as 900°C or higher, it is better to control the temperature not higher than 750°C. Due to an excessively high temperature, such as 900° C., a portion of the polymer in the electrode glue will be pyrolyzed and the density of the subsequently formed electrode will decrease.
請參照第1圖及第2D圖,方法10進行至步驟S14,形成第二溝槽,自第二側面向內延伸,兩相鄰的第二溝槽間不互相連通,且第一溝槽與第二溝槽交疊且交錯設置。根據本發明某些實施方式,如第2D圖所示,形成第二溝槽230於陶瓷熟胚210內,第二溝槽230由第二側面210d朝第一側面210c延伸。在某些實施例中,形成第二溝槽230的方法包含使用切割製程,切割製程包含使用水刀、超音波刀具、鑽石刀、金剛線或其組合。在某些實施例中,第二溝槽230相互平行且第二溝槽230平行於第一溝槽220。在另一實施例中,各第二溝槽230相對於第二側面210d具有相同的深度。1 and 2D, the
請參照第1圖及第2E圖,方法10進行至步驟S15,形成第二內部電極於第二溝槽內。在形成第二溝槽230之後,如第2E圖所示,填入電極膠232於第二溝槽230中並進行乾燥、及固化(curing),形成第二內部電極234。兩相鄰的第二內部電極234間不互相連通,且第一內部電極224與第二內部電極234交疊且交錯設置。在某些實施例中,電極膠232包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在某些實施例中,電極膠的乾燥溫度介於60℃至750℃,例如100℃、200℃、300℃、400℃、500℃、600℃或700℃。Referring to FIG. 1 and FIG. 2E,
需要注意的是,如果在形成第一溝槽220後及填入電極膠222前即形成第二溝槽230,陶瓷熟胚210可能會在形成第二溝槽230的過程中碎裂。It should be noted that if the
請參照第1圖及第2F圖,方法10進行至步驟S16,形成第一外部電極電性連接第一內部電極,並形成第二外部電極電性連接第二內部電極。如第2F圖所示,在某些實施方式中,形成外部電極242於頂面210a及第二側面210d,並形成外部電極244於底面210b及第一側面210c。外部電極242與第二電極234電性連接。外部電極244與第一電極224電性連接。在一實施例中,形成外部電極242的方法包含塗覆電極膠於頂面210a及第二側面210d。形成外部電極244的方法包含塗覆電極膠於底面210b及第一側面210c。電極膠包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。Referring to FIGS. 1 and 2F,
值得注意的是,傳統製作多層壓電陶瓷元件時主要使用陶瓷共燒技術。但是陶瓷共燒技術包含高溫燒結製程,在高溫燒結時電極膠體可能會擴散至陶瓷中,導致多層壓電陶瓷元件的性能下降。透過本發明提供的上述方法10,在低溫環境之下即可形成多層壓電陶瓷元件,進而避免電極膠體中的金屬擴散至陶瓷中而影響多層壓電陶瓷元件的性能,或避免高溫環境下使電極膠體氧化。It is worth noting that ceramic co-firing technology is mainly used in the traditional production of multilayer piezoelectric ceramic components. However, the ceramic co-firing technology includes a high-temperature sintering process. During high-temperature sintering, the electrode colloid may diffuse into the ceramic, resulting in the performance degradation of the multilayer piezoelectric ceramic element. Through the above-mentioned
第3A-3G圖繪示根據本發明某些實施方式之製備多層壓電陶瓷元件之各製程階段的剖面示意圖,其中此多層壓電陶瓷元件的內部電極具有曲面或非平面結構。請參照第1圖及第3A-3B圖,方法10開始於步驟S11,提供陶瓷熟胚。如第3A圖所示,根據本發明某些實施方式,陶瓷熟胚310包含頂面310a、底面310b、第一側面310c及第二側面310d。第二側面310d相對於第一側面310c。Figures 3A-3G show schematic cross-sectional views of various process stages for preparing multilayer piezoelectric ceramic components according to some embodiments of the present invention, wherein the internal electrodes of the multilayer piezoelectric ceramic components have a curved or non-planar structure. Please refer to Fig. 1 and Figs. 3A-3B.
在某些實施例中,陶瓷熟胚包含壓電材料,壓電材料可例如為鈦酸鋇、鋯鈦酸鉛、鋯鈦酸鉛鑭、鈦酸鉍鈉或其他可作為多層壓電陶瓷元件之任何陶瓷材料。In some embodiments, the ceramic preforms contain piezoelectric materials. The piezoelectric materials can be, for example, barium titanate, lead zirconate titanate, lead lanthanum zirconate titanate, sodium bismuth titanate, or other multilayer piezoelectric ceramic components. Any ceramic material.
如第3B圖所示,在一實施例中,可選擇性地對陶瓷熟胚310的特定面進行加工,例如加工陶瓷熟胚310的頂面310a及底面310b分別形成加工頂面312a及加工底面312b。舉例來說,加工頂面312a及加工底面312b可分別具有一曲率半徑,此曲率半徑介於1×10-6
公尺至1公尺。As shown in Figure 3B, in one embodiment, specific surfaces of the ceramic
請參照第1圖、第3C及第4圖,方法10進行至步驟S12,形成第一溝槽,自第一側面向內延伸,兩相鄰的第一溝槽間不互相連通。根據本發明某些實施方式,如第3C圖所示,形成第一溝槽320於陶瓷熟胚310內,第一溝槽320由第一側面310c朝第二側面310d延伸。在一實施例中,形成第一溝槽320的方法包含使用切割製程,切割製程包含使用水刀、超音波刀具、鑽石刀、金剛線或其組合。在另一實施例中,第一溝槽320具有曲面320a,曲面320a的曲率半徑介於1×10-6
公尺至1公尺。Referring to FIGS. 1, 3C and 4, the
在一特定的實施例中,使用超音波刀具形成陶瓷熟胚310內的溝槽。請參照第4圖,第4圖繪示一部分的超音波加工成型裝置,此超音波加工成型裝置包含變幅桿410及刀片420。變幅桿410連接至超音波產生器(未繪示)。超音波產生器產生預定頻率的超音波振動並傳導至變幅桿410及刀片420,使其產生共振。之後利用刀片420來加工工件。藉由調整刀片420的數量、厚薄、形狀及/或刀片420間的間距,可在陶瓷熟胚310的內部形成特定形狀的溝槽,或將陶瓷熟胚310的頂面、底面或側面加工成特定形狀。舉例來說,刀片420可具有平面結構、弧面結構、曲折狀結構或不規則狀結構。In a specific embodiment, an ultrasonic tool is used to form the grooves in the ceramic cooked blank 310. Please refer to FIG. 4. FIG. 4 shows a part of the ultrasonic processing and forming device. The ultrasonic processing and forming device includes a
請參照第1圖、第3D,方法10進行至步驟S13,形成第一內部電極於第一溝槽內,第一內部電極由第一側面朝第二側面延伸。在形成第一溝槽320之後,如第3D圖所示,填入電極膠322於第一溝槽320中並進行乾燥、及固化(curing),形成第一內部電極324。在一實施例中,電極膠322包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在另一實施例中,電極膠322包含的金屬係選自由銀、銅、金、及鋁所組成之群組。在另一實施例中,電極膠的乾燥溫度介於60℃至750℃,例如100℃、200℃、300℃、400℃、500℃、600℃或700℃。1 and 3D, the
請參照第1圖及第3E圖,方法10進行至步驟S14,形成第二溝槽,自第二側面向內延伸,兩相鄰的第二溝槽間不互相連通,且第一溝槽與第二溝槽交疊且交錯設置。根據本發明某些實施方式,如第3E圖所示,第二溝槽330形成於陶瓷熟胚310內,第二溝槽330由第二側面310d朝第一側面310c延伸。在某些實施例中,形成第二溝槽330的方法包含使用切割製程,切割製程包含使用水刀、超音波刀具、鑽石刀、金剛線或其組合。在另一實施例中,第二溝槽323具有曲面330a,曲面330a的曲率半徑介於1×10-6
公尺至1公尺。1 and 3E, the
請參照第1圖及第3F圖,方法10進行至步驟S15,形成第二內部電極於第二溝槽內。在形成第二溝槽330之後,如第3F圖所示,填入電極膠332於第二溝槽330中並進行乾燥、及固化(curing),形成第二電極334。兩相鄰的第二電極334間不互相連通,且第一內部電極324與第二電極334交疊且交錯設置。在某些實施例中,電極膠332包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在另一實施例中,電極膠332包含的金屬係選自由銀、銅、金、及鋁所組成之群組。在某些實施例中,電極膠的乾燥溫度介於60℃至750℃,例如100℃、200℃、300℃、400℃、500℃、600℃或700℃。Referring to FIG. 1 and FIG. 3F, the
請參照第1圖及第3G圖,方法10進行至步驟S16,形成第一外部電極電性連接第一內部電極,並形成第二外部電極電性連接第二內部電極。如第3G圖所示,在某些實施方式中,形成外部電極342於加工頂面312a及第二側面310d,並形成外部電極344於加工底面312b及第一側面310c。外部電極342與第二電極334電性連接。外部電極344與第一電極324電性連接。在一實施例中,形成外部電極342包含塗覆電極膠於加工頂面312a及第二側面310d。形成外部電極344包含塗覆電極膠於加工底面312b及第一側面310c。電極膠包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在一實施例中,電極膠包含的金屬係選自由銀、銅、金、及鋁所組成之群組。Referring to FIGS. 1 and 3G, the
根據本發明的另一態樣,提供一種多層壓電陶瓷元件。在某些實施方式中,多層壓電陶瓷元件300包含:陶瓷主體310、第一內部電極324、第二內部電極334、第一外部電極342及第二外部電極344。陶瓷主體310具有加工頂面312a、加工底面312b、第一側面310c、第二側面310d、第一溝槽320及第二溝槽330。第二側面310d相對於第一側面310c。第一溝槽320由第一側面310c向內延伸,兩相鄰的第一溝槽320間不互相連通。第二溝槽330由第二側面310d向內延伸,兩相鄰的第二溝槽330間不互相連通。第一溝槽320與第二溝槽330交疊且交錯設置。第一溝槽320及第二溝槽330係經由超音波加工而形成,且第一溝槽320及第二溝槽330的深寬比介於1至50,例如2、5、8、10、15、20、25、30、35、40或45。第一內部電極324位於第一溝槽320內且填滿第一溝槽320。第二內部電極334位於第二溝槽330內且填滿第二溝槽330。第一外部電極342配置於第一側面310c上及加工頂面312a上。第二外部電極344配置於第二側面310d上及加工底面312b上。外部電極342與第二電極334電性連接。外部電極344與第一電極324電性連接。第一外部電極342及/或第二外部電極344包含至少一種金屬或其他導電材料。金屬可例如為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在一實施例中,第一外部電極342及/或第二外部電極344包含的金屬係選自由銀、銅、金、及鋁所組成之群組。According to another aspect of the present invention, a multilayer piezoelectric ceramic element is provided. In some embodiments, the multilayer piezoelectric ceramic element 300 includes a
相對於傳統的切削加工具,本揭露內容使用的超音波加工有許多好處。超音波加工提供高精度的加工能力,平均誤差小於1μm,且可製作出成形難度較高的結構,例如高深寬比的溝槽。超音波加工的低溫工作環境也可以使陶瓷的性質不受高溫影響。超音波加工的製作速度快,也符合大量生產的需求。此外,藉由設計超音波刀具的形狀,可以製造出具有複雜幾何形狀的多層壓電陶瓷元件。相對地,經由傳統共燒製程形成的多層壓電陶瓷元件,只能侷限於簡單的幾何形狀。Compared with traditional cutting tools, the ultrasonic processing used in this disclosure has many advantages. Ultrasonic processing provides high-precision processing capabilities, with an average error of less than 1μm, and can produce structures that are difficult to form, such as grooves with high aspect ratios. The low temperature working environment of ultrasonic processing can also make the properties of ceramics not affected by high temperature. The production speed of ultrasonic processing is fast, and it also meets the needs of mass production. In addition, by designing the shape of the ultrasonic tool, multilayer piezoelectric ceramic components with complex geometries can be manufactured. In contrast, the multilayer piezoelectric ceramic components formed by the traditional co-firing process can only be limited to simple geometric shapes.
在某些實施例中,第一內部電極324及第二內部電極334包含金屬元素(例如銀、銅、金或鋁),且第一內部電極324及第二內部電極334所含之金屬元素,在陶瓷主體310中的含量的莫耳百分比小於5%。利用方法10所製造的多層壓電陶瓷元件,因為電極不須與陶瓷共燒,所以電極中的金屬不會因高溫而擴散至多層壓電陶瓷元件的陶瓷中。故可使陶瓷具備原有的材料特性,進而提升多層壓電陶瓷元件的性能及可靠度。In some embodiments, the first
在某些實施例中,第一內部電極324包含曲面324a。第二內部電極334包含曲面334a。曲面324a及334a具有曲率半徑,曲率半徑介於1×10-6
公尺至1公尺。In some embodiments, the first
在某些實施例中,陶瓷主體310為陶瓷熟胚。陶瓷主體310包含鈦酸鋇、鋯鈦酸鉛、鋯鈦酸鉛鑭、鈦酸鉍鈉或其他可作為多層壓電陶瓷元件之任何陶瓷材料。在一實施例中,第一內部電極324及第二內部電極334包含至少一種金屬或其他導電材料。金屬為銀、銅、金或鋁。其他導電材料可例如為錳酸鍶鑭等之導電陶瓷材料。在又一實施例中,陶瓷主體310可為曲折狀、不對稱狀或其他不規則狀。In some embodiments, the
如第5圖所示,根據本發明某些實施方式,多層壓電陶瓷元件500包含陶瓷主體510、第一內部電極524、第二內部電極534、外部電極542及544。陶瓷主體510包含加工頂面512a、加工底面512b、第一加工側面512c及第二加工側面512d。在一實施例中,加工頂面512a及加工底面512b為曲折狀,其中加工頂面512a及加工底面512b為曲折狀。加工頂面512a包含夾角θ1
及θ2
,夾角θ1
及θ2
各介於60∘
至150∘
,例如90∘
或120∘
。加工頂面512b包含夾角θ3
及θ4
,夾角θ3
及θ4
各介於60∘
至150∘
,例如90∘
或120∘
。第一內部電極524配置於陶瓷主體510內,第一內部電極524由第一加工側面512c朝第二加工側面512d延伸。第二內部電極534配置於陶瓷主體510內,第二內部電極534由第二加工側面512d朝第一加工側面512c延伸。各第二內部電極534與各第一內部電極524交替排列,各第一內部電極524於加工底面512b上之第一投影區域與各第二內部電極534於加工底面512b上之第二投影區域重疊,且各第一內部電極524與鄰近之各第二內部電極534之間具有一部分的陶瓷主體510。在一實施例中,多層壓電陶瓷元件500可為致動器。As shown in FIG. 5, according to some embodiments of the present invention, a multilayer piezoelectric
綜上所述,本發明之各實施例提供多層壓電陶瓷元件的製造方法。能在低溫環境之下形成多層壓電陶瓷元件,進而避免電極膠體中的金屬擴散至陶瓷中而影響多層壓電陶瓷元件的性能,或避免高溫環境下使電極膠體氧化。本發明之各實施例更提供多層壓電陶瓷元件,利用前述方法製備多層壓電陶瓷元件,可控制多層壓電陶瓷元件的尺寸,更能精準地控制多層壓電陶瓷元件或其內部電極的曲率或平坦度,進而提升良率。In summary, the various embodiments of the present invention provide methods for manufacturing multilayer piezoelectric ceramic components. The multilayer piezoelectric ceramic element can be formed in a low temperature environment, thereby preventing the metal in the electrode colloid from diffusing into the ceramic and affecting the performance of the multilayer piezoelectric ceramic element, or preventing the electrode colloid from oxidizing in a high temperature environment. Each embodiment of the present invention further provides a multilayer piezoelectric ceramic element. The multilayer piezoelectric ceramic element is prepared by the aforementioned method, which can control the size of the multilayer piezoelectric ceramic element and more accurately control the curvature of the multilayer piezoelectric ceramic element or its internal electrodes. Or flatness, thereby improving yield.
上文概述若干實施例之特徵結構,使得熟習此項技術者可更好地理解本發明之態樣。熟習此項技術者應瞭解,可輕易使用本發明作為設計或修改其他製程及結構的基礎,以便實施本文所介紹之實施例的相同目的及/或實現相同優勢。熟習此項技術者亦應認識到,此類等效結構並未脫離本發明之精神及範疇,且可在不脫離本發明之精神及範疇的情況下做出對本發明的各種變化、替代及更改。The feature structures of several embodiments are summarized above, so that those skilled in the art can better understand the aspects of the present invention. Those familiar with the art should understand that the present invention can be easily used as a basis for designing or modifying other processes and structures in order to implement the same purpose and/or achieve the same advantages of the embodiments described herein. Those familiar with the art should also realize that such equivalent structures do not depart from the spirit and scope of the present invention, and can make various changes, substitutions and alterations to the present invention without departing from the spirit and scope of the present invention .
10‧‧‧方法S11、S12、S13、S14、S15、S16‧‧‧步驟200、300、500‧‧‧多層壓電陶瓷元件210、310、510‧‧‧陶瓷熟胚、陶瓷主體210a、310a‧‧‧頂面210b、310b‧‧‧底面210c、310c‧‧‧第一側面210d、310d‧‧‧第二側面220、320‧‧‧第一溝槽222、322‧‧‧電極膠224、324、524‧‧‧第一內部電極230、330‧‧‧第二溝槽232、332‧‧‧電極膠234、334、524‧‧‧第二內部電極242、244‧‧‧外部電極312a、512a‧‧‧加工頂面312b、512b‧‧‧加工底面320a、330a‧‧‧曲面410‧‧‧變幅桿420‧‧‧刀片512c‧‧‧第一加工側面512d‧‧‧第二加工側面θ1、θ2、θ3、θ4‧‧‧夾角10‧‧‧Methods S11, S12, S13, S14, S15, S16‧‧‧Steps 200, 300, 500‧‧‧Multilayer piezoelectric
第1圖為根據某些實施方式之多層壓電陶瓷元件之製造方法的流程圖。 第2A-2F及3A-3G圖係繪示依照本發明某些實施方式之多層壓電陶瓷元件之製造方法之各製程階段的剖面示意圖。 第4圖係繪示依照本發明某些實施方式之一部分的超音波加工成型裝置的示意圖。 第5圖為根據本發明某些實施方式之多層壓電陶瓷元件的剖面示意圖。FIG. 1 is a flowchart of a method of manufacturing a multilayer piezoelectric ceramic element according to some embodiments. FIGS. 2A-2F and 3A-3G are schematic cross-sectional views of various process stages of a method for manufacturing a multilayer piezoelectric ceramic element according to some embodiments of the present invention. FIG. 4 is a schematic diagram of a part of an ultrasonic processing molding device according to some embodiments of the present invention. Figure 5 is a schematic cross-sectional view of a multilayer piezoelectric ceramic element according to some embodiments of the present invention.
310‧‧‧陶瓷主體 310‧‧‧Ceramic body
310c‧‧‧第一側面 310c‧‧‧First side
310d‧‧‧第二側面 310d‧‧‧Second side
312a‧‧‧加工頂面 312a‧‧‧Machining top surface
312b‧‧‧加工底面 312b‧‧‧Processing bottom surface
324‧‧‧第一內部電極 324‧‧‧First internal electrode
334‧‧‧第二內部電極 334‧‧‧Second inner electrode
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