TWI707229B - Test method for built-in memory of computer device - Google Patents
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Abstract
Description
本揭示內容是關於一種檢測方法,特別是關於一種測試內建記憶體的檢測方法。The present disclosure relates to a detection method, especially to a detection method for testing the built-in memory.
基本輸入輸出系統(basic input/output system: BIOS)用於使電腦硬體與作業系統溝通之介面。尤其是電腦開機時,BIOS更用以正確的初始化電腦中的硬體設備,使在作業系統啟用之後,這些硬體設備可以被正常的使用。Basic input/output system (basic input/output system: BIOS) is an interface used to communicate between computer hardware and the operating system. Especially when the computer is turned on, the BIOS is used to correctly initialize the hardware devices in the computer, so that these hardware devices can be used normally after the operating system is enabled.
當電腦中存在功能不正常的硬體設備時使得電腦無法正常開啟時,BIOS會發出警示聲以通知使用者。電腦檢測人員再使用特殊除錯BIOS去檢測電腦,以找出問題之所在,其中包含了許多置換硬體的步驟與人工。When a malfunctioning hardware device in the computer prevents the computer from turning on normally, the BIOS will sound a warning sound to notify the user. Computer testing personnel then use special debugging BIOS to test the computer to find out the problem, which includes many steps and manual replacement of hardware.
為了解決上述問題,本揭示內容的一些態樣係於提供一種檢測方法用以檢測電腦裝置中的內建記憶體,其中檢測方法包含:藉由電腦裝置中的基本輸入輸出系統(basic input/output system,BIOS)的檢測功能,測試內建記憶體以建立資料檔案;藉由測試裝置執行分析程式以分析資料檔案;以及依據分析資料檔案,判斷內建記憶體中是否存在功能不正常的記憶體晶片。資料檔案包含內建記憶體中多個記憶體晶片的多個測試數據。In order to solve the above problems, some aspects of the present disclosure are to provide a detection method for detecting the built-in memory in a computer device, wherein the detection method includes: using a basic input/output system in the computer device system, BIOS) to test the built-in memory to create a data file; run an analysis program through the test device to analyze the data file; and based on the analysis of the data file, determine whether there is abnormal memory in the built-in memory Wafer. The data file contains multiple test data of multiple memory chips in the built-in memory.
下文係舉實施例配合所附圖式作詳細說明,但所描述的具體實施例僅僅用以解釋本發明實施例,並不用來限定本發明實施例,而結構操作之描述非用以限制其執行之順序,任何由元件重新組合之結構,所產生具有均等功效的裝置,皆為本發明實施例揭示內容所涵蓋的範圍。The following is a detailed description of embodiments in conjunction with the accompanying drawings, but the specific embodiments described are only used to explain the embodiments of the present invention, and are not used to limit the embodiments of the present invention, and the description of structural operations is not intended to limit its execution. The order, any structure of recombination of components, to produce a device with equal effect, is the scope covered by the disclosure of the embodiments of the present invention.
參考第1圖。第1圖是依照本揭示文件的一些實施例所繪示之一種電腦系統10的示意圖。在一些實施例中,電腦系統10用以執行繪示於第2圖與第3圖中的測試方法,該測試方法將參考第2圖與第3圖於後討論。Refer to Figure 1. FIG. 1 is a schematic diagram of a
如第1圖所繪示,電腦系統10包含電腦裝置100與測試裝置100A。測試裝置100A耦接於電腦裝置100。在一些實施例中,電腦裝置100包含主機板120與基本輸入輸出系統(basic input/output system: BIOS)裝置140。在一些實施例中,BIOS裝置140內置於主機板120。在一些實施例中,主機板120更包含內建記憶體122、測試埠124與喇叭126。As shown in FIG. 1, the
在一些實施例中,測試裝置100A耦接至電腦裝置100中的主機板120。在一些實施例中,測試裝置100A耦接至主機板120中的測試埠124。在一些實施例中,BIOS裝置140接至主機板120中測試埠124。In some embodiments, the
在一些實施例中,電腦裝置100為個人電腦。在一般使用情況下,電腦裝置100藉由BIOS裝置140致能(enable)主機板120而開啟。若主機板120中存在功能不正常之元件(例如,功能不正常之內建記憶體122),則電腦裝置100開啟失敗。在一些實施例中,主機板120中的元件本身有瑕疵(例如,電路板上之電容損毀),則使該元件功能不正常而造成電腦裝置100開啟失敗。在另一些實施例中,主機板120中的元件安裝不正確(例如焊錫裂開),則使該元件功能不正常而造成電腦裝置100開啟失敗。In some embodiments, the
在一些實施例中,若電腦裝置100開啟失敗,測試裝置100A用以耦接至電腦裝置100,且電腦裝置100藉由測試裝置100A來開啟。換言之,當電腦裝置100處於一般使用情況下,不需要測試裝置100A來開啟。In some embodiments, if the
在一些實施例中,測試裝置100A透過測試埠124來測試電腦裝置100。測試裝置100A係為可執行程式的裝置,例如另一電腦裝置。In some embodiments, the
在一些實施例中,主機板120更包含多個插槽用以安裝中央處理單元、顯示卡、硬碟機等(未繪示)。在一些實施例中,主機板120由電路組成並藉由該電路連結主機板120上之元件。In some embodiments, the
在一些實施例中,內建記憶體122用以儲存電腦裝置100在開啟時所需要使用的程式碼。內建記憶體122為直接安裝在主機板120之上的硬體元件(on board記憶體)。內建記憶體122直接電焊在主機板120之上,具有無法由人工輕易置換的特性。若要維修主機板120上的內建記憶體122,需耗費大量時間與工作成本,將焊死在主機板120上的內建記憶體122的焊錫溶解,再把新的記憶體焊回主機板120。在另一些實施例中,內建記憶體122包含雙通道。每個通道包含多個記憶體晶片。在一些實施例中,記憶體晶片為動態隨機存取記憶體(dynamic random access memory: DRAM)晶片,例如雙倍資料同步動態隨機存取記憶體(double data rate synchronous dynamic random access memory: DDR SDRAM)晶片。上述內建記憶體122之配置僅為示例之用途,各種配置的內建記憶體122皆在本揭示文件內容考量的範疇內。例如,內建記憶體122包含三或更多個通道。In some embodiments, the built-in
在一些實施例中,測試埠124為輸入/輸出埠(input/output port: I/O port),其用以除錯主機板120中可能發生的錯誤。測試埠124包含多個I/O接腳。在一些實施例中,測試埠124為通用輸入/輸出(general purpose input output: GPIO)埠,其包含多個GPIO接腳用以接收及/或輸出訊號,例如接收時脈訊號。在一些實施例中,藉由GPIO接腳,使用者可用現有或自訂的程式自由控制主機板120。In some embodiments, the
在一些實施例中,BIOS裝置140用以作為一個韌體介面。在電腦裝置100開啟時,BIOS裝置140用以執行自我測試程序(power on self test: POST),POST亦稱為上電自檢。當BIOS裝置140執行POST時,BIOS裝置140檢測電腦裝置100上的設備,以確保各個設備的正常運作。在另一些實施例中,當電腦裝置100上存在功能不正常的設備時,BIOS裝置140用以產生警示訊號,例如藉由喇叭126產生警示聲。換言之,當電腦裝置100無法成功開啟時,BIOS系統140會產生警示訊號以通知使用者。In some embodiments, the
在一些實施例中,BIOS系統140更用以在電腦裝置100成功開啟後載入儲存在主機板120中的作業系統(operating system: OS)或啟動程式(initial program loader: IPL)。In some embodiments, the
在一些實施例中,BIOS系統140包含內建檢測功能程式碼142。內建檢測功能程式碼142用以儲存一檢測功能程式。在一些實施例中,測試裝置100A用以致能內建檢測功能程式碼142中的檢測功能程式,利用檢測功能程式來檢查內建記憶體122中是否存在功能不正常的記憶體晶片。當檢測功能程式被執行時,關於內建記憶體122的資訊的資料檔案D被建立。當執行完檢測功能程式時,測試裝置100A透過測試埠124擷取出資料檔案D。資料檔案D包含內建記憶體122中每個記憶體晶片的測量數據。在一些實施例中,資料檔案D為純文字格式,例如.txt格式。In some embodiments, the
參考第2圖。第2圖為根據本揭示文件之一些實施例所繪示之用於第1圖中的電腦系統10的檢測方法200流程圖。為了達到簡化及清楚之目的,檢測方法200將參考示於第1圖中元件之標號以進行討論。如第2圖所繪示,檢測方法200包含操作S201、S202、S203與S204。因為內建記憶體122無法輕易地由人工抽換,因此檢測方法200用以在不需抽換內建內建記憶體122的前提下進行檢測。Refer to Figure 2. FIG. 2 is a flowchart of a
在操作S201中,BIOS裝置140中的檢測功能程式藉由測試裝置100A致能以啟動。測試裝置100A透過測試埠124使檢測功能程式被執行。In operation S201, the detection function program in the
在操作S202中,檢測功能程式測試主機板120上的內建記憶體122,並擷取內建記憶體122的檢測資訊。再依據內建記憶體122的檢測資訊建立資料檔案D。In operation S202, the detection function program tests the built-in
在一些實施例中,當檢測功能程式測試內建記憶體122時,內建記憶體122中的每個通道中的每個記憶體晶片都被測試。在一些實施例中,記憶體晶片的反應電壓被測試並紀錄為資料檔案D的一部份。在一些實施例中,記憶體晶片的反應電壓為在正常工作電壓下記憶體晶片本身的跨壓。例如,在寫入模式(WRITE)中,記憶體晶片反應出來本身的跨壓。又或例如,在讀取模式(READ)中,記憶體晶片反應出來本身的跨壓。In some embodiments, when the test function program tests the built-in
在一些實施例中,每一個記憶體晶片被以不同的測試條件測試多次,例如檢測功能程式使用九種不同的測試條件測試每個記憶體晶片,因此每個記憶體晶片具有9個測量數據。In some embodiments, each memory chip is tested multiple times under different test conditions. For example, the test function program uses nine different test conditions to test each memory chip, so each memory chip has 9 measurement data. .
在操作S203中,測試裝置100A藉由測試埠124讀取資料檔案D,並啟動儲存於測試裝置100A的一分析程式。In operation S203, the
在一些實施例中,分析程式被儲存於BIOS裝置140中,測試裝置100A用以致能分析程式以執行該程式的功能。上述分析程式被儲存的位置僅用以釋例。各種用來儲存與執行分析程式的裝置皆在本揭露文件的考量與範疇之內。In some embodiments, the analysis program is stored in the
在操作S204中,藉由分析程式,分析資料檔案D以檢查內建記憶體122中的每個記憶體晶片的狀態。In operation S204, the data file D is analyzed by the analysis program to check the status of each memory chip in the built-in
第2圖所繪示之檢測方法200僅為示例之用途,但本揭露文件並不以此為限。各種不同的檢測方法200均在本揭露文件之範疇之內。The
參考第3圖。第3圖為根據本揭示文件之一些實施例所繪示第2圖中檢測方法200的細部流程圖。如第3圖所繪示,檢測方法300包含操作S301、S302、S303、S304、S305、S306、S307、S308、S309、310與S311。在一些實施例中,測試方法300為操作S204的細部流程圖。為了以較佳的方式理解本揭示內容,測試方法300將搭配第1圖與第2圖的實施例進行討論,但本揭示內容不以此為限制。Refer to Figure 3. FIG. 3 is a detailed flowchart of the
在操作S301中,測試裝置100A執行分析程式,以尋找資料檔案D中的多個字串中的第一字串。在一些實施例中,若資料檔案D包含第一字串代表,則代表資料檔案D指出內建記憶體122存在功能不正常的記憶體晶片。In operation S301, the
在操作S302中,判斷是否找在資料檔案D中到第一字串。如第3圖所示,若沒有找到第一字串,則操作S303被執行。反之,若有找到第一字串,操作S304被執行。In operation S302, it is determined whether the first character string is found in the data file D. As shown in Figure 3, if the first character string is not found, operation S303 is executed. Conversely, if the first character string is found, operation S304 is executed.
在操作S303中,分析程式沒有找到第一字串,測試裝置100A藉由一顯示裝置(未繪示)顯示電腦裝置100的內建記憶體122沒有功能不正常的記憶體晶片。在一些實施例中,測試裝置100A本身具有顯示銀幕用以顯示檢測的結果。In operation S303, the analysis program does not find the first string, and the
在操作S304中,依據找到的第一字串,尋找列於第一字串之後的記憶體資訊。列於第一字串之後的記憶體資訊為記憶體晶片的測量數據。找到記憶體晶片的測量數據之後,比對記憶體晶片的測量數據與一預設值。在一些實施例中,預設值代表記憶體晶片的電學邊限,用以指示記憶體晶片在操作或被測試時物理特性(例如反應電壓)的界線。In operation S304, the memory information listed after the first string is searched according to the found first string. The memory information listed after the first string is the measurement data of the memory chip. After the measurement data of the memory chip is found, the measurement data of the memory chip is compared with a preset value. In some embodiments, the preset value represents the electrical margin of the memory chip, and is used to indicate the boundary of the physical characteristics (such as response voltage) of the memory chip during operation or under test.
在操作S305中,判斷每個記憶體晶片的測量數據是否有大於預設值。如第3圖所示,若記憶體晶片的測量數據沒有大於預設值,操作S306被執行。若記憶體晶片的測量數據大於預設值,操作S307被執行。In operation S305, it is determined whether the measurement data of each memory chip is greater than a preset value. As shown in FIG. 3, if the measurement data of the memory chip is not greater than the preset value, operation S306 is executed. If the measurement data of the memory chip is greater than the preset value, operation S307 is executed.
在操作S307中,當記憶體晶片的測量數據大於預設值,該些記憶體晶片被歸類為正常的記憶體晶片,並將這些正常的記憶體晶片的測量資料建立在分析程式內的第一資料區。In operation S307, when the measurement data of the memory chip is greater than the preset value, the memory chips are classified as normal memory chips, and the measurement data of these normal memory chips are established in the first part of the analysis program. One data area.
在操作S306中,當記憶體晶片的測量數據沒有大於預設值,該些記憶體晶片被歸類為可能不正常的記憶體晶片,並將這些可能不正常的記憶體晶片的測量資料建立在分析程式內的第二資料區。In operation S306, when the measurement data of the memory chip is not greater than the preset value, the memory chips are classified as possible abnormal memory chips, and the measurement data of these possibly abnormal memory chips are established in The second data area in the analysis program.
在一些實施例中,單一個記憶體晶片在經過操作S204多組測試條件測試之後,得到多組測量數據。在操作S308中,統計該些可能不正常的記憶體晶片的測量數據中沒有大於預設值的數量,並判斷該次數是否大於一預設次數。例如,在操作S305中,一記憶體晶片具有9組測量數據,其中至少一組的測量數據沒有大於預設值,因此該記憶體晶片被歸類為可能不正常的記憶體晶片,而到了操作S308中,該記憶體晶片中的9組測量數據有5組沒有大於預設值,因此該記憶體晶片大於預設值的次數記錄為5次,並判斷5次是否大於預設次數。若記憶體晶片紀錄的次數大於預設次數,則判定該記憶體晶片為功能不正常的記憶體晶片。若記憶體晶片紀錄的次數不大於預設次數,則判定該記憶體晶片為功能正常的記憶體晶片。換言之,一個記憶體晶片要被判定為功能不正常時,該記憶體晶片必須具有超過預定次數的不正常測量數據。In some embodiments, a single memory chip obtains multiple sets of measurement data after multiple sets of test conditions are tested in operation S204. In operation S308, count the number of measurement data of the memory chips that may be abnormal that are not greater than a preset value, and determine whether the number of times is greater than a preset number. For example, in operation S305, a memory chip has 9 sets of measurement data, of which at least one set of measurement data is not greater than a preset value. Therefore, the memory chip is classified as a memory chip that may be abnormal, and the operation In S308, 5 of the 9 sets of measurement data in the memory chip are not greater than the preset value, so the number of times the memory chip is greater than the preset value is recorded as 5 times, and it is determined whether the 5 times are greater than the preset number. If the number of times recorded by the memory chip is greater than the preset number, it is determined that the memory chip is a malfunctioning memory chip. If the number of times recorded by the memory chip is not greater than the preset number, it is determined that the memory chip is a functional memory chip. In other words, when a memory chip is to be judged to be malfunctioning, the memory chip must have abnormal measurement data exceeding a predetermined number of times.
如第3圖所示,若記憶體晶片紀錄的次數大於預設次數,操作S309被執行。若所有可能不正常的記憶體晶片紀錄的次數沒有大於預設次數,操作S311被執行。As shown in FIG. 3, if the number of times recorded by the memory chip is greater than the preset number, operation S309 is executed. If the number of records of all possible abnormal memory chips is not greater than the preset number, operation S311 is executed.
在操作S309中,依據內建記憶體122的一位置檔案,分別尋找功能不正常的記憶體晶片在內建記憶體122中的實體位置。In operation S309, according to a location file of the built-in
在操作S310中,依據實體位置,維修該些記憶體晶片。當功能不正常的記憶體晶片的位置確定後,記憶體晶片被解焊離開內建記憶體122。在一些實施例中,新的記憶體晶片被重焊回內建記憶體122,以維持內建記憶體122中記憶體晶片的數量。In operation S310, the memory chips are repaired according to the physical location. When the position of the malfunctioning memory chip is determined, the memory chip is unsoldered away from the built-in
在一些相關技術中,測試人員在測試電腦的記憶體時,先置換電腦中的BIOS,換上特別用來測試電腦的除錯BIOS,再依據除錯BIOS中的功能來檢測電腦。測試結束後,再把原本的BIOS置換回電腦上。測試人員必須花費置換硬體裝置的時間成本來達到檢測的目的。In some related technologies, when testing the memory of a computer, a tester first replaces the BIOS in the computer, replaces it with a debugging BIOS specially used for testing the computer, and then tests the computer according to the functions in the debugging BIOS. After the test is over, replace the original BIOS back to the computer. Testers must spend the time cost of replacing hardware devices to achieve the purpose of testing.
相較於上述的相關技術,藉由本揭示文件的內容,電腦裝置100可藉由BIOS裝置140上的檢測功能程式來進行測試,不須置換BIOS裝置140,再藉由測試裝置100A中的分析程式,可以直接找到有問題的記憶體晶片,縮小了除錯範圍,從整個內建記憶體122到內建記憶體中的通道中的單一記憶體晶片。因此節省了由人工置換硬體的時間,增進測試的效率。例如減少解焊與電焊內建記憶體122與BIOS裝置140的過程。Compared with the above-mentioned related technology, based on the content of the present disclosure, the
在操作S311中,內建記憶體122狀態被記錄。在操作S303之後,因為記憶體沒有損壞,因此紀錄內建記憶體122為無須維修。在操作S307之後,該些被歸類為功能正常的記憶體晶片紀錄為無須維修。在操作S308之後,該些記憶體晶片被記錄的次數沒有超過預設次數,因此記錄該些記憶體晶片為無須維修。在操作S310之後,因為功能不正常的記憶體晶片被維修了,因此紀錄該些記憶體晶片為已維修。In operation S311, the state of the built-in
上述的測試方法300的敘述包含示例性的操作,但測試方法300的該些操作不必依所顯示的順序被執行。測試方法300的該些操作的順序得以被變更,或者該些操作得以在適當的情況下被同時執行、部分同時執行或省略,皆在本揭示文件之實施例的精神與範疇內。例如,在操作S309之後,電腦裝置100依據功能不正常的記憶體晶片位置,產生不同的聲音或指示光,用以指示測試者功能不正常的記憶體晶片的位置。又或例如,在操作S311可以被省略。The above description of the
參考第4A圖與第4B圖。第4A圖為根據本揭示文件之一些實施例之資料檔案400A的示意圖。第4B圖為根據本揭示文件之一些實施例之位置檔案400B的示意圖。為了以較佳的方式理解本揭示內容,第4A圖與第4B圖將搭配第1~3圖的實施例進行討論,但本揭示內容不以此為限制。Refer to Figure 4A and Figure 4B. FIG. 4A is a schematic diagram of a
在一些實施例中,資料檔案400A為資料檔案D的部分。資料檔案400A為資料檔案D中包含第一字串與內建記憶體122的測量數據的部分。如第4A圖所示,虛線框401指出資料檔案400A中的第一字串。在此例中,第一字串為「Measure Eye Width, per BYTE, at ALL (2D) Timing Points-RandBitMask=0x3」。在操作S301中,當分析程式找到第一字串時,列於第一字串之後的資訊為內建記憶體122的測量數據。In some embodiments, the
如第4A圖所示,虛線框402指出資料檔案400A中的不大於預設值的測量數據。在此例中,預設值為「5-5」,虛線框402中的測量數據有不大於「5-5」。在操作S304與操作S305中,資料檔案400A中指出內建記憶體122的通道1(channel 1)中的記憶體晶片6 (Byte6)為可能不正常的記憶體晶片。其他的記憶體晶片因為沒有不大於預設值的測量數據,因此歸類為功能正常的記憶體晶片。As shown in FIG. 4A, the dashed
繼續參考第4A圖。虛線框402中包含9組測量數據其不大於預設值。在操作S308中,通道1的記憶體晶片6的測量數據有9次不大於預設值,因此次數記錄為9。接著再與預設次數比較。在此例中,預設次數為6,通道1的記憶體晶片6紀錄的次數大於6,因此通道1的記憶體晶片6被歸類為功能不正常的記憶體晶片。Continue to refer to Figure 4A. The dashed
參考第4B圖。位置檔案400B包含了記憶體晶片的通道與位置資訊。虛線框403與虛線框404指出了在資料檔案400A得到的功能不正常記憶體晶片6(Byte 6)對應到位置檔案400B中的實體位置。在此例中,記憶體晶片6的位置為「CHIP U4102」。在操作S310中,依據400B所指示的「CHIP U4102」維修位於內建記憶體122中此位置的記憶體晶片。Refer to Figure 4B. The
第4A圖與第4B圖中的資料檔案400A與位置檔案400B僅為釋例之用途。各種不同的資料檔案400A與位置檔案400B均在本揭示內容的考量與範疇之內。The data file 400A and the
在一些實施例中,本揭示內容提供一種檢測方法用以檢測電腦裝置中的內建記憶體,其中檢測方法包含:藉由電腦裝置中BIOS的檢測功能,測試內建記憶體以建立資料檔案;藉由測試裝置執行分析程式以分析資料檔案;以及依據分析資料檔案,判斷內建記憶體中是否存在功能不正常的記憶體晶片。資料檔案包含內建記憶體中多個記憶體晶片的多個測試數據。In some embodiments, the present disclosure provides a detection method for detecting the built-in memory in a computer device, where the detection method includes: testing the built-in memory to create a data file through the detection function of the BIOS in the computer device; Analyze the data file by executing the analysis program by the test device; and determine whether there is a memory chip with abnormal function in the built-in memory based on the analysis data file. The data file contains multiple test data of multiple memory chips in the built-in memory.
雖然本發明之實施例已揭露如上,然其並非用以限定本發明實施例,任何熟習此技藝者,在不脫離本發明實施例之精神和範圍內,當可做些許之更動與潤飾,因此本發明實施例之保護範圍當以後附之申請專利範圍所界定為準。Although the embodiment of the present invention has been disclosed as above, it is not intended to limit the embodiment of the present invention. Anyone familiar with the art can make some changes and modifications without departing from the spirit and scope of the embodiment of the present invention. Therefore, The protection scope of the embodiments of the present invention shall be defined as the scope of the patent application attached hereafter.
10:電腦系統
100: 電腦裝置
100A:測試裝置
120:主機板
122:內建記憶體
124:測試埠
126:喇叭
140:BIOS裝置
142:內建檢測功能程式碼
D:資料檔案
200、300:方法 S201、S202、S203、S204、S301、S302、S303、S304、S305、S306、S307、S307、S308、S309、S310、S311:操作
400A:資料檔案
400B:位置檔案
401、402、403、404:虛線框10: Computer system
100:
藉由閱讀以下對實施例之詳細描述可以更全面地理解本揭示案,參考附圖如下: 第1圖為根據本揭示文件之一些實施例所繪示之電腦系統的示意圖; 第2圖為根據本揭示文件之一些實施例所繪示之用於第1圖中的電腦系統的檢測方法流程圖; 第3圖為根據本揭示文件之一些實施例所繪示第2圖中的檢測方法的細部流程圖; 第4A圖為根據本揭示文件之一些實施例之資料檔案的示意圖;以及 第4B圖為根據本揭示文件之一些實施例之位置檔案的示意圖。The present disclosure can be understood more fully by reading the following detailed description of the embodiments, with reference to the accompanying drawings as follows: Figure 1 is a schematic diagram of a computer system drawn according to some embodiments of the present disclosure; Figure 2 is a basis Some embodiments of this disclosure show a flowchart of the detection method used in the computer system in Figure 1; Figure 3 is a detail of the detection method shown in Figure 2 according to some embodiments of this disclosure Flow chart; Figure 4A is a schematic diagram of a data file according to some embodiments of the present disclosure; and Figure 4B is a schematic diagram of a location file according to some embodiments of the present disclosure.
300:方法 300: method
S301、S302、S303、S304、S305、S306、S307、S308、S309、S310、S311:操作 S301, S302, S303, S304, S305, S306, S307, S308, S309, S310, S311: Operation
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US20100088545A1 (en) * | 2008-10-03 | 2010-04-08 | Fujitsu Limited | Computer apparatus and processor diagnostic method |
TW201112257A (en) * | 2009-07-02 | 2011-04-01 | Silicon Image Inc | Computer memory test structure |
US20120331345A1 (en) * | 2011-06-24 | 2012-12-27 | Hon Hai Precision Industry Co., Ltd. | Memory testing system and method of computing device |
TW201626398A (en) * | 2014-12-01 | 2016-07-16 | 皇虎科技(加拿大)有限公司 | System and method for testing and identifying memory devices |
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US20100088545A1 (en) * | 2008-10-03 | 2010-04-08 | Fujitsu Limited | Computer apparatus and processor diagnostic method |
TW201112257A (en) * | 2009-07-02 | 2011-04-01 | Silicon Image Inc | Computer memory test structure |
US20120331345A1 (en) * | 2011-06-24 | 2012-12-27 | Hon Hai Precision Industry Co., Ltd. | Memory testing system and method of computing device |
TW201626398A (en) * | 2014-12-01 | 2016-07-16 | 皇虎科技(加拿大)有限公司 | System and method for testing and identifying memory devices |
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