TWI706850B - Exposure device, imprinting device and manufacturing method of article - Google Patents
Exposure device, imprinting device and manufacturing method of article Download PDFInfo
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- TWI706850B TWI706850B TW108101973A TW108101973A TWI706850B TW I706850 B TWI706850 B TW I706850B TW 108101973 A TW108101973 A TW 108101973A TW 108101973 A TW108101973 A TW 108101973A TW I706850 B TWI706850 B TW I706850B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Abstract
[課題] 本發明目的在於提供一種曝光裝置,在減低被供應至曝光裝置內的氣體的氧濃度的變化方面有利。 [解決手段] 本發明的曝光裝置係一種曝光裝置,其係經由光學系統將基板進行曝光者,具備:第1流路,其被供應包含氧的第1氣體;第2流路,其被供應氧濃度與前述第1氣體不同的第2氣體;計測部,其計測前述第1流路的氧濃度;和供應部,其具有混合部與供應流路,該混合部基於前述計測部的計測結果,利用前述第1氣體與前述第2氣體生成混合氣體,該供應流路從該混合部將前述混合氣體供應至前述光學系統與前述基板之間的空間。[Problem] An object of the present invention is to provide an exposure apparatus which is advantageous in reducing the change in the oxygen concentration of the gas supplied into the exposure apparatus. [Solution] The exposure apparatus of the present invention is an exposure apparatus that exposes a substrate via an optical system, and includes: a first flow path to which a first gas containing oxygen is supplied; and a second flow path to which is supplied A second gas having a different oxygen concentration from the first gas; a measurement unit that measures the oxygen concentration of the first flow path; and a supply unit that has a mixing unit and a supply flow path based on the measurement result of the measurement unit , Using the first gas and the second gas to generate a mixed gas, and the supply flow path supplies the mixed gas from the mixing section to the space between the optical system and the substrate.
Description
本發明涉及曝光裝置、壓印裝置及物品之製造方法。The present invention relates to an exposure device, an imprinting device and a method of manufacturing an article.
在彩色濾光片、半導體裝置等的製造,利用將倍縮光罩、遮罩等的原版的圖案經由投影光學系統投影於基板上(玻璃板、晶圓等)的曝光裝置,進行在基板上的抗蝕層形成圖案(潛像)的處理。在如此的處理中使用的抗蝕層,已知因存在於曝光環境中的氧使得因曝光光的照射所產生的化學反應變慢。為此,優選上,依對於往抗蝕層的圖案形成的要求而控制曝光環境中的氧濃度。例如,在將微細的圖案高精度地形成於抗蝕層的情況下,可提高曝光環境中的氧濃度而使抗蝕層的化學反應變慢,此外在使處理量提升的情況下可減低曝光環境中的氧濃度而加快抗蝕層的化學反應。In the manufacture of color filters, semiconductor devices, etc., the pattern of the original plate such as the magnification mask, the mask, etc. is projected on the substrate (glass plate, wafer, etc.) via the projection optical system. The resist layer is patterned (latent image) processing. It is known that the resist layer used in such a process slows down the chemical reaction caused by the exposure light irradiation due to oxygen present in the exposure environment. For this reason, it is preferable to control the oxygen concentration in the exposure environment in accordance with the requirements for pattern formation on the resist layer. For example, in the case of forming a fine pattern on the resist layer with high accuracy, the oxygen concentration in the exposure environment can be increased to slow down the chemical reaction of the resist layer, and the exposure can be reduced when the throughput is increased. The oxygen concentration in the environment accelerates the chemical reaction of the resist layer.
在日本特開2007-94066號公報中已揭露:具有對曝光裝置內供應氧氣的氧氣供應系統、和對曝光裝置內供應氮氣的氮氣供應系統,為了依氧濃度計的測定值調成既定的氧濃度,調整氧氣與氮氣的供應量而混合。Japanese Patent Laid-Open No. 2007-94066 has disclosed that it has an oxygen supply system for supplying oxygen in the exposure apparatus and a nitrogen supply system for supplying nitrogen in the exposure apparatus, in order to adjust to a predetermined oxygen according to the measured value of the oxygen concentration meter. The concentration is adjusted to mix the supply of oxygen and nitrogen.
在日本特開2007-94066號公報已揭露:在曝光裝置的腔室內配置氧濃度計,計測腔室內的氧濃度,從而就氧氣供應系統與氮氣供應系統進行回授控制而調整為期望的濃度。於計測腔室內的氧濃度而控制為目標氧濃度的曝光裝置,混合前的氧氣供應系統的氧濃度從期望的值發生變化時,腔室內的氧濃度恐相對於目標氧濃度大幅偏差。Japanese Patent Application Laid-Open No. 2007-94066 has disclosed that an oxygen concentration meter is arranged in the chamber of the exposure device to measure the oxygen concentration in the chamber, thereby performing feedback control on the oxygen supply system and the nitrogen supply system to adjust the concentration to a desired concentration. In an exposure apparatus that measures the oxygen concentration in the chamber and controls it to the target oxygen concentration, when the oxygen concentration of the oxygen supply system before mixing changes from a desired value, the oxygen concentration in the chamber may greatly deviate from the target oxygen concentration.
本發明的曝光裝置一種曝光裝置,其係經由光學系統將基板進行曝光者,具備:第1流路,其被供應包含氧的第1氣體;第2流路,其被供應氧濃度與前述第1氣體不同的第2氣體;計測部,其計測前述第1流路的氧濃度;和供應部,其具有混合部與供應流路,該混合部基於前述計測部的計測結果,利用前述第1氣體與前述第2氣體生成混合氣體,該供應流路從該混合部將前述混合氣體供應至前述光學系統與前述基板之間的空間。 本發明的其他特徵從以下之實施方式而明朗化(在參照附圖的情況下)。The exposure apparatus of the present invention is an exposure apparatus that exposes a substrate via an optical system, and includes: a first flow path to which a first gas containing oxygen is supplied; and a second flow path to which an oxygen concentration and the aforementioned second flow path are supplied 1 second gas with a different gas; a measurement unit that measures the oxygen concentration in the first flow path; and a supply unit that has a mixing portion and a supply flow path, and the mixing portion uses the first measurement result based on the measurement result of the measurement unit. The gas and the second gas generate a mixed gas, and the supply flow path supplies the mixed gas from the mixing part to the space between the optical system and the substrate. Other features of the present invention will be clarified from the following embodiments (in the case of referring to the drawings).
以下,基於圖式詳細說明本發明的優選實施方式。另外,於各圖,就相同的構材標注相同的參考符號,重複之說明係省略。Hereinafter, a preferred embodiment of the present invention will be described in detail based on the drawings. In addition, in each figure, the same reference numeral is attached to the same member, and the repeated description is omitted.
(第1實施方式)
就本發明相關的第1實施方式的曝光裝置100,一面參照圖1一面進行說明。圖1係就第1實施方式的曝光裝置100的構成進行繪示的示意圖。曝光裝置100係以步進掃描方式將基板6進行曝光,並進行將遮罩1(倍縮光罩)的圖案轉印於基板6(基板上的抗蝕層5)的處理(曝光處理)的光刻裝置。其中,曝光裝置100亦可適用步進重複方式、其他曝光方式。(First embodiment)
The
曝光裝置100例如可包含:照明光學系統2、可保持遮罩1而移動的遮罩台3(倍縮光罩載台)、投影光學系統4、可保持基板6而移動的基板載台7、供應部8、氧濃度計9(計測部)和控制部10。控制部10例如由具有CPU、記憶體等的電腦構成,控制曝光裝置100的各部分(控制曝光處理)。控制部10可設於曝光裝置100內,亦可設於與曝光裝置100不同之處,並以遠程進行控制。此外,曝光裝置100的各部分係配置於界定曝光室的腔室11的內部。腔室11的內部的環境氣體係透過環境氣體維持部12維持為溫度、濕度被控制的環境空氣。The
照明光學系統2將從水銀燈、ArF準分子雷射、KrF準分子雷射等的光源(未圖示)射出的光,整形為例如帶狀、圓弧狀的狹縫光,以該狹縫光就遮罩1的一部分進行照明。遮罩1及基板6分別被透過遮罩台3及基板載台7而保持,隔著投影光學系統4(光學系統)分別配置於光學上大致共軛的位置(投影光學系統4的物面及像面)。投影光學系統4具有既定的投影倍率,透過狹縫光將遮罩1的圖案投影於基板6(具體而言,供應(塗佈)至基板上的抗蝕層5)。遮罩台3及基板載台7係一面互相同步一面以依投影光學系統4的投影倍率下的速度比被相對掃描。藉此,可將遮罩1的圖案轉印於基板上的抗蝕層5。The illumination
在如此的曝光裝置100,已知因存在於曝光環境中的氧使得因曝光光而產生的抗蝕層5的化學反應變慢。為此,優選上,依對於往基板上的抗蝕層5的圖案形成的要求而控制曝光環境中的氧濃度。例如,在將微細的圖案高精度地形成於抗蝕層5的情況下,可提高曝光環境中的氧濃度而使抗蝕層5的化學反應變慢,此外在使處理量提升的情況下可減低曝光環境中的氧濃度而加快抗蝕層5的化學反應。In such an
關於此,例示彩色濾光片的製造方法而說明。彩色濾光片的製造方法方面包括:染色法、印刷法、電鍍電場法、顔料分散法等的各種的方法。此等方法之中,在當前,考量製造上的穩定性、簡易性,顔料分散法成為主流。在具代表性的是顔料分散法的感光丙烯酸法方面,包含類丙烯酸系感光性樹脂,對具有著色功能與感光功能雙方的彩色光阻,透過光刻形成圖案。In this regard, the method of manufacturing a color filter will be described as an example. The manufacturing methods of color filters include various methods such as dyeing method, printing method, electroplating electric field method, and pigment dispersion method. Among these methods, at present, the pigment dispersion method has become the mainstream in consideration of stability and ease of manufacturing. In the photosensitive acrylic method, which is representative of the pigment dispersion method, an acrylic-like photosensitive resin is included, and a color resist having both a coloring function and a photosensitive function is patterned through photolithography.
彩色光阻係負光阻,故照射曝光光時,產生有助於反應的自由基,使聚合物光聚合,不溶於顯影劑。其中,含於彩色光阻的顔料的成分容易吸收曝光光,此外,產生的自由基被存在於曝光環境中(空氣中)的氧捕捉,故光聚合反應處於受到妨礙的傾向。亦即,因曝光光而產生的彩色光阻的化學反應因存在於空氣中的氧而變慢,處理量恐降低。為此,要使處理量提升,可減低曝光環境中的氧濃度。另一方面,因曝光光而產生的彩色光阻的化學反應變慢如此的情形表示可高精度地控制往抗蝕層的微細的圖案的形成。為此,要將微細的圖案高精度地形成於抗蝕層的情況下,可提高曝光環境中的氧濃度。The color photoresist is a negative photoresist, so when irradiated with exposure light, it generates free radicals that contribute to the reaction and photopolymerizes the polymer, which is insoluble in the developer. Among them, the component of the pigment contained in the color resist tends to absorb exposure light, and the generated radicals are captured by oxygen existing in the exposure environment (in the air), so the photopolymerization reaction tends to be hindered. That is, the chemical reaction of the color resist generated by the exposure light is slowed down by the oxygen present in the air, and the throughput may be reduced. For this reason, to increase the throughput, the oxygen concentration in the exposure environment can be reduced. On the other hand, the fact that the chemical reaction of the color photoresist due to exposure light slows down indicates that the formation of a fine pattern on the resist layer can be controlled with high accuracy. For this reason, when a fine pattern is formed on the resist layer with high accuracy, the oxygen concentration in the exposure environment can be increased.
所以,本實施方式的曝光裝置100包含將調整為目標氧濃度的氣體供應至投影光學系統4與基板6之間的空間(在以下,稱為「曝光空間」)的供應部8,控制曝光環境中的氧濃度。Therefore, the
供應部8具有:被供應包含空氣(氧)的第1氣體(基準氣體)的第1流路101、被供應氧濃度比第1氣體高的第2氣體的第2流路102、和被供應氧濃度比第1氣體低的第3氣體的第3流路103。並且,供應部8在連接第1流路101、第2流路102及第3流路103的混合部104的內部生成目標氧濃度的氣體(混合氣體),將生成的氣體經由供應流路105(供應噴嘴)供應至曝光空間。在供應部8的目標氧濃度的氣體的生成係如示於圖2般,控制部10控制分別設於第1流路101、第2流路102及第3流路103的控制閥111~113(例如質流計)從而可進行。The
於此,在本實施方式,可第1氣體方面使用空氣(作為基準氣體的乾燥空氣)、第2氣體方面使用氧氣,第3氣體方面使用氮氣,惟並非限定於此者。第1氣體不限於空氣,亦可為將氮或氧混合於空氣使得相對於空氣變更氧濃度下的氣體。亦即,第1氣體表示主成分為空氣的氣體。第1氣體方面,例如可使用在工廠設備生成的清潔乾燥空氣等的氣體(氧濃度、溫度及濕度中至少一者被調整的氣體)。此外,第2氣體不限於氧氣,如上述般,以第1氣體為基準而氧濃度高即可。同樣,第3氣體不限於氮氣,以第1氣體為基準而氧濃度低即可。Here, in this embodiment, air (dry air as a reference gas) may be used for the first gas, oxygen may be used for the second gas, and nitrogen may be used for the third gas, but it is not limited to this. The first gas is not limited to air, and may be a gas in which nitrogen or oxygen is mixed with air to change the oxygen concentration relative to air. That is, the first gas means a gas whose main component is air. Regarding the first gas, for example, a gas (a gas in which at least one of oxygen concentration, temperature, and humidity is adjusted) such as clean dry air generated in a factory facility can be used. In addition, the second gas is not limited to oxygen, and as described above, the oxygen concentration may be high based on the first gas. Similarly, the third gas is not limited to nitrogen, and the oxygen concentration may be low based on the first gas.
此外,於供應部8,具有第2氣體及第3氣體中的任一者即可。此情況下,亦可具備與第1氣體的氧濃度不同的氧濃度的氣體作為第2氣體,將第1氣體與第2氣體混合從而生成目標氧濃度的氣體。In addition, the
於如此的供應部8,供應至混合部104的第1氣體的氧濃度從既定的值發生變化時,在混合部混合的氣體的氧濃度暫時變化,恐相對於在曝光空間的氣體的目標氧濃度產生誤差。此原因在於,製造乾燥空氣作為第1氣體的設備通常採用使用矽膠等的吸附劑下的二塔切換式的吸附裝置。此方式具有選擇性吸附空氣成分之中氮成分如此的特性。為此,在將再生程序的結束後的吸附塔再度升壓的過程,升壓氣體之中氮成分被吸附劑吸收,結果氧的濃縮的氣體殘留於在緊接著切換為精製程序之前的包含吸附塔的系統內。因此,於緊接著切換為精製程序後,乾燥空氣中的氧濃度會暫時急上升,供應至混合部104的第1氣體的氧濃度恐從既定的值大幅變化。In such a
為此,於本實施方式的供應部8,在被供應包含至少空氣的第1氣體的第1流路101設置作為計測氧濃度的計測部的氧濃度計9。供應部8基於依氧濃度計9下的第1氣體的氧濃度的計測結果,使第2氣體及第3氣體之中至少一方混合於第1氣體,從而生成目標氧濃度的氣體。使用第2氣體、第3氣體的氧濃度為期望的值的氣體的情況下,於第2流路102、第3流路103亦可不設置計測氧濃度的氧濃度計9。For this reason, in the
例如,目標氧濃度比第1氣體的氧濃度的計測結果高的情況下,供應部8在混合部104使第2氣體混合於第1氣體從而生成目標氧濃度的氣體,將生成的氣體經由供應流路105供應至曝光空間。另一方面,目標氧濃度比第1氣體的氧濃度的計測結果低的情況下,供應部8在混合部104使第3氣體混合於第1氣體從而生成目標氧濃度的氣體,將生成的氣體經由供應流路105供應至曝光空間。For example, when the target oxygen concentration is higher than the measurement result of the oxygen concentration of the first gas, the
於此,在供應部8,例如有時因工廠設備的故障等的影響使得無法從第1流路101供應第1氣體。此情況下,控制部10亦可不使用第1氣體,以使第2氣體與第3氣體混合從而生成目標氧濃度的氣體的方式控制供應部8(各流路的控制閥111~113)。此外,基於計測曝光空間的溫度、濕度(溫度及濕度中至少一者)的結果,在混合部104的內部調整目標氧濃度的氣體的溫度、濕度亦可。此情況下,於曝光裝置100,可設置計測曝光空間的溫度的溫度計、計測濕度的濕度計、調整混合部104內的氣體的溫度、濕度的調整部(加熱器等)。此外,亦可具備計測混合部104內的氣體的氧濃度的氧濃度計。Here, in the
再者,於曝光裝置100的腔室11內,亦可設置計測曝光空間的氧濃度的氧濃度計9。氧濃度計9配置於投影光學系統4與基板6之間的局部空間(曝光空間)的附近,計測該局部空間的氧濃度。腔室11內的氧濃度計9亦可配置於可替代計測投影光學系統4與基板6之間的氧濃度的位置。例如,在供應部8的供應流路105的端部與投影光學系統4(的最終面的附近)之間等配置氧濃度計9從而可替代計測。如此般設置氧濃度計9,使得控制部10可基於氧濃度計9的計測結果,控制分別設於第1流路101、第2流路102及第3流路103的控制閥111~113,生成目標氧濃度的氣體。Furthermore, in the
利用圖2,就透過在第1實施方式的曝光裝置100的供應部8生成目標氧濃度的氣體而供應至曝光空間的實施例進行說明。With reference to FIG. 2, an example in which a gas having a target oxygen concentration is generated by the
控制部10從記憶部13取得用於曝光處理的曝光配方,讀入設定於取得的曝光配方的曝光空間的目標氧濃度。並且,控制部10以生成目標氧濃度的氣體而供應至曝光空間的方式控制供應部8。此時,控制部10基於透過氧濃度計9計測的第1氣體(乾燥空氣)的第1流路101的氧濃度,以成為在曝光處理為必需的目標氧濃度的方式控制供應部8。於此,第1實施方式的曝光裝置100係個別地構成記憶部13與控制部10,惟亦可將記憶部13構成為控制部10的一部分。於記憶部13記憶與曝光處理的種類對應的目標氧濃度。The
接著,控制部10以在第1流路101的氧濃度計9計測的值、記憶於記憶部13的氧(第2氣體)及惰性氣體(第3氣體)的氧濃度為基礎,為了成為讀取的氧濃度而進行各氣體的流量比算出,基於該數值控制供應部8。具體而言,控制部10控制連接混合部104的第1流路101的控制閥111、第2流路102的控制閥112及第3流路103的控制閥113從而調整從各流路供應的氣體的流量。Next, the
於此,使第1流路101(乾燥空氣供應系統)的氧濃度為21%,使第2流路102(氧供應系統)的氧濃度為99%,使第3流路103(惰氣供應系統)的氧濃度為1%。記憶於記憶部13的配方的目標氧濃度比第1流路101的氧濃度高的情況下,從第1流路101與第2流路102供應第1氣體與第2氣體。記憶於記憶部13的配方的氧濃度比第1流路101的氧濃度低的情況下,從第1流路101與第3流路103供應第1氣體與第2氣體。Here, the oxygen concentration of the first flow path 101 (dry air supply system) is 21%, the oxygen concentration of the second flow path 102 (oxygen supply system) is 99%, and the third flow path 103 (inert gas supply The oxygen concentration of the system) is 1%. When the target oxygen concentration of the recipe stored in the
具體而言,於圖2(A),控制部10控制各流路的控制閥111、112、113,從而控制從各流路供應至混合部104的氣體的流量。目標氧濃度比第1流路101的氧濃度高的情況下,為了從第1流路101與第2流路102供應第1氣體與第2氣體,將控制閥111、112開放,將控制閥113關閉,從而在混合部104生成所期望的氧濃度的混合氣體。目標氧濃度比第1流路101的氧濃度低的情況下,為了從第1流路101與第3流路103供應第1氣體與第3氣體,將控制閥111、113開放,將控制閥112關閉,從而在混合部104生成所期望的氧濃度的混合氣體。Specifically, in FIG. 2(A), the
此時,從第1流路101供應的第1氣體的氧濃度產生變化的情況下,基於氧濃度計9的計測結果就控制閥112、113進行控制而調整供應至混合部104的氣體的流量。藉此,可減小混合部104內的混合氣體的相對於目標氧濃度之變動,可減小從供應流路105供應至曝光空間的混合氣體的氧濃度的變動,可使混合氣體的氧濃度為期望的值(目標氧濃度)。At this time, when the oxygen concentration of the first gas supplied from the
另外,控制部10亦可將第2流路102的第2氣體與第3流路103的第3氣體混合,從而在混合部104生成期望的氧濃度的氣體。然而,如上述般以第1氣體為基準而生成目標氧濃度的氣體,使得比起使氧濃度差大的第2氣體與第3氣體混合而生成目標氧濃度的氣體,更可縮短至混合氣體的氧濃度穩定為止所需的時間。此外,一般情況下,空氣比氧氣、氮氣(惰性氣體)便宜。為此,比起使氧氣與氮氣混合而生成目標氧濃度的氣體,以空氣為基準而生成目標氧濃度的氣體在成本考量上較有利。In addition, the
在歷來的曝光裝置,氧濃度計配置於投影光學系統4的最終面與基板6之間,基於就供應至投影光學系統4的最終面與基板6之間的局部空間的混合氣體的氧濃度進行計測的結果,就供應部8進行回授控制。為此,供應前無法檢測出乾燥空氣的氧濃度變動,恐在無法進行供應部8的控制之下,供應相對於目標值氧濃度具有大的誤差的混合氣體。In the conventional exposure apparatus, the oxygen concentration meter is arranged between the final surface of the projection optical system 4 and the substrate 6, based on the oxygen concentration of the mixed gas supplied to the local space between the final surface of the projection optical system 4 and the substrate 6. As a result of the measurement, the
相對於此,本實施方式的曝光裝置100在供應至投影光學系統4的最終面與基板6之間的局部空間前在第1流路101配置氧濃度計9。利用氧濃度計9的計測值與預先予以記憶於記憶部13的第2流路(第2氣體)與第3流路(第3氣體)的氧濃度值,進行供應部8的控制。藉此,可在對曝光空間供應混合氣體前追隨第1氣體(乾燥空氣)的氧濃度變動而控制供應部8,混合氣體能以目標氧濃度供應。In contrast, the
(第2實施方式)
就本發明相關的第2實施方式的曝光裝置200,一面參照圖3一面進行說明。圖3係就第2實施方式的曝光裝置200的構成進行繪示的示意圖。另外,於第2實施方式的曝光裝置,就與第1實施方式的曝光裝置相同的構材係標注相同的參考符號,省略重複之說明。(Second embodiment)
The
第1實施方式的曝光裝置100係在第1流路101配置氧濃度計9的實施方式。控制部10利用在氧濃度計9計測的第1氣體(乾燥空氣)的氧濃度值與預先予以記憶於記憶部13的第2氣體(氧)與第3氣體(惰性氣體)的氧濃度值,求出各氣體的流量比,基於該流量比控制供應部8。The
在另一方面,示於圖3的第2實施方式的曝光裝置200係亦分別於第2流路102及第3流路103配置氧濃度計31、32。第2實施方式的曝光裝置200的控制部10利用來自分別配置於第1流路、第2流路、第3流路的氧濃度計9、31、32(計測部)的計測結果,求出第1氣體、第2氣體、第3氣體的流量比,基於求出的流量比而控制供應部8。藉此,第2氣體方面採用純度低的氧、第3氣體方面採用純度低的惰性氣體的情況下,仍可將在混合部104生成的混合氣體調整為如目標值的氧濃度。為此,第2實施方式的曝光裝置200的供應部8可對投影光學系統4的最終面與基板6之間的曝光空間供應期望的氧濃度的混合氣體。On the other hand, in the
此外,配置於第1流路101、第2流路102、第3流路103的氧濃度計9、31、32至供應部8的混合部104為止的距離係因在工廠內設置的曝光裝置的布局等而不同。此外,在氧濃度計9、31、32計測的氧濃度變動到達供應部8的混合部104的時間係因在個別的流路的配管長、消耗流量及供應壓力而不同。為此,控制部10透過在就控制在混合部104混合的各氣體的流量的控制閥111、112、113進行控制方面予以具有時間差,使得可於氧濃度計的配置方面予以具有自由度。In addition, the distance between the
(第3實施方式) 再者,曝光裝置係一般情況下,投影光學系統4的光學性能大為受到投影光學系統4(最終面)與基板6之間的局部空間(曝光空間)的折射率的影響。氣體的折射率係因氣體的溫度及濕度而變化,故減小氣體的溫度及濕度的變化,使得可使投影光學系統4的光學性能為期望的狀態而進行曝光處理。(Third Embodiment) Furthermore, in the exposure apparatus system, generally, the optical performance of the projection optical system 4 is greatly affected by the refractive index of the local space (exposure space) between the projection optical system 4 (final surface) and the substrate 6. The refractive index of the gas changes with the temperature and humidity of the gas, so the change in the temperature and humidity of the gas is reduced, so that the optical performance of the projection optical system 4 can be made into a desired state for exposure processing.
例如,在曝光裝置100,在使基板6的表面位置(Z方向)對準於投影光學系統4的成像位置的狀態下進行曝光處理。在另一方面,透過供應部8供應至曝光空間的氣體的氧濃度雖相同,惟該氣體的溫度及濕度不同時,投影光學系統4的成像位置恐變化。伴隨供應至混合部104的氣體的混合比的變化,供應至曝光空間的混合氣體的溫度及濕度發生變化時,曝光空間的折射率變化,投影光學系統4的成像位置改變,基板6的表面位置會從投影光學系統4的成像位置偏離。For example, in the
所以,在第3實施方式的曝光裝置,第1氣體、第2氣體及第3氣體預先調整為互相不同的溫度,以混合氣體接近目標氧濃度及目標溫度的方式,使該等氣體混合。亦即,透過第1氣體、第2氣體及第3氣體之中至少兩個混合而調整混合氣體的溫度。目標溫度例如可包含配置投影光學系統4的環境氣體的溫度(腔室11的內部環境的溫度)。在本實施方式,雖就以第1氣體、第2氣體及第3氣體預先調整為互相不同的溫度之例進行說明,惟不限於此,亦可該等氣體預先調整為互相不同的濕度。此情況下,以混合氣體成為目標濕度的方式,使該等氣體混合。Therefore, in the exposure apparatus of the third embodiment, the first gas, the second gas, and the third gas are adjusted to mutually different temperatures in advance, and the gases are mixed so that the mixed gas approaches the target oxygen concentration and target temperature. That is, the temperature of the mixed gas is adjusted by mixing at least two of the first gas, the second gas, and the third gas. The target temperature may include, for example, the temperature of the ambient gas in which the projection optical system 4 is arranged (the temperature of the internal environment of the chamber 11). In this embodiment, an example in which the first gas, the second gas, and the third gas are adjusted to mutually different temperatures in advance is described, but it is not limited to this, and the gases may be adjusted to mutually different humidity in advance. In this case, the mixed gas is mixed so that the mixed gas becomes the target humidity.
(第4實施方式)
上述的任一個實施方式的曝光裝置皆就相對於第1氣體將第2氣體與第3氣體混合從而調整為目標氧濃度的情況進行說明。然而,本發明的曝光裝置的供應部8亦可在不使用三種類的氣體之下將利用兩種類的氧濃度互相不同的氣體而調整為目標氧濃度的混合氣體供應至曝光空間。(Fourth embodiment)
The exposure apparatus of any of the above-mentioned embodiments will be described with respect to the case where the second gas and the third gas are mixed with the first gas to adjust the target oxygen concentration. However, the
例如,第4實施方式的供應部8將氧濃度相對於目標氧濃度低的第1氣體從第1流路101供應至混合部104,將氧濃度相對於目標氧濃度高的第2氣體從第2流路102供應至混合部104。曝光裝置的控制部10基於設於第1流路101的氧濃度計9的計測結果與設於第2流路102的氧濃度計31的計測結果,控制控制閥111與控制閥112而控制供應至混合部104的第1氣體與第2氣體的流量。第1氣體與第2氣體中的一者的氧濃度為期望的值(不大幅變化)的情況下,設置氧濃度計9或氧濃度計31中任一者即可。此外,供應至混合部8的氣體亦可為三種類以上的氣體。For example, the
上述的任一個實施方式雖皆就經由光學系統將基板進行曝光的曝光裝置進行說明,惟亦可代替曝光裝置,為利用模具在基板上形成壓印材的圖案的壓印裝置。壓印裝置係使供應至基板上的壓印材與模具(mold)接觸,對壓印材供予硬化用的能量,從而形成被轉印模具的凹凸圖案的硬化物的圖案的裝置。壓印裝置使用於作為物品的半導體裝置等的裝置的製造。可於壓印裝置對模具與基板之間的空間透過供應部8供應氧濃度被調整過的混合氣體。Although any of the above-mentioned embodiments has described an exposure device that exposes a substrate via an optical system, instead of the exposure device, an imprinting device that uses a mold to form a pattern of an imprinting material on a substrate may be used. The imprinting device is a device that brings the imprinting material supplied to the substrate into contact with a mold, and supplies energy for hardening to the imprinting material, thereby forming the pattern of the hardened product of the uneven pattern of the transferred mold. The imprinting device is used in the manufacture of devices such as semiconductor devices as articles. The imprinting device can supply the mixed gas whose oxygen concentration has been adjusted to the space between the mold and the substrate through the
於壓印方法,已知光硬化法、熱循環法。在光硬化法,使用紫外線固化樹脂,將模具隔著樹脂壓於基板的狀態下照射紫外線而使樹脂硬化後,從硬化的樹脂將模具分離從而形成圖案。此外,在熱循環法,將熱塑性樹脂加熱為玻璃轉移溫度以上的溫度,在提高樹脂的流動性的狀態下隔著樹脂將模具壓於基板,冷卻後從樹脂將模具分離從而形成圖案。上述的供應部8可適用於任一方法的壓印裝置。As for the imprinting method, the light hardening method and the thermal cycle method are known. In the photo-curing method, an ultraviolet curable resin is used, and a mold is irradiated with ultraviolet rays while being pressed against a substrate via the resin to cure the resin, and then the mold is separated from the cured resin to form a pattern. In the thermal cycle method, the thermoplastic resin is heated to a temperature higher than the glass transition temperature, the mold is pressed against the substrate through the resin while the fluidity of the resin is improved, and the mold is separated from the resin to form a pattern after cooling. The above-mentioned
此外,透過供應部8(混合部104)調整的氣體不限於氧濃度。例如,於壓印裝置供應至模具與基板之間的空間的氣體方面,存在包含氦、氮氣的氣體的情況,本發明的供應部8亦可作成調整此等氦、氮氣等的濃度。此情況下,計測部方面,代替氧濃度計9,依被調整的氣體的種類,配置可測定特定的氣體的濃度的濃度計即可。In addition, the gas adjusted through the supply unit 8 (mixing unit 104) is not limited to the oxygen concentration. For example, with regard to the gas supplied by the imprinting device to the space between the mold and the substrate, there may be a gas containing helium and nitrogen. The
(物品之製造方法的實施方式) 本發明之實施方式相關的物品之製造方法適於製造例如半導體裝置等之微型裝置、具有微細構造的元件等之物品。本實施方式的物品之製造方法包含:利用上述的曝光裝置在基板(塗佈於基板的感光劑)形成圖案(潛像)的程序(將基板進行曝光的程序)、和在該程序將曝光(形成圖案)的基板進行顯影的程序。再者,如此之製造方法可包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式的物品之製造方法比起歷來的方法,在物品的性能、品質、生產性、生產成本中的至少一者方面有利。(Implementation of the manufacturing method of the article) The method of manufacturing an article related to an embodiment of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices, and elements having a fine structure. The manufacturing method of the article of the present embodiment includes a process of forming a pattern (latent image) on a substrate (a photosensitive agent applied to the substrate) using the above-mentioned exposure device (a process of exposing the substrate), and exposing ( The patterned substrate is developed. Furthermore, such a manufacturing method may include other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, packaging, etc.). The manufacturing method of the article of this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.
以上,雖說明有關本發明之優選實施方式,惟本發明理當不限定於此等實施方式,在其要旨之範圍內,可進行各種變化及變更。 本發明雖在參照實施方式下進行說明,惟應理解該發明未限定於所揭露的實施方式。應對於申請專利範圍進行最廣泛的解釋以包含各種變更、等效的結構及功能。 本案根據2018年2月28日申請之特願2018-035312主張優先權之利益,於此援用其整體內容。Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various changes and modifications can be made within the scope of the gist. Although the present invention is described with reference to the embodiments, it should be understood that the present invention is not limited to the disclosed embodiments. The broadest interpretation of the scope of the patent application should be made to include various changes, equivalent structures and functions. This case claims the benefit of priority based on the special application 2018-035312 filed on February 28, 2018, and the whole content is used here.
1‧‧‧遮罩
2‧‧‧照明光學系統
3‧‧‧遮罩台
4‧‧‧投影光學系統
5‧‧‧抗蝕層
6‧‧‧基板
7‧‧‧基板載台
8‧‧‧供應部
9‧‧‧氧濃度計
10‧‧‧控制部
11‧‧‧腔室
12‧‧‧環境氣體維持部
13‧‧‧記憶部
31‧‧‧氧濃度計
32‧‧‧氧濃度計
100‧‧‧曝光裝置
101‧‧‧第1流路
102‧‧‧第2流路
103‧‧‧第3流路
104‧‧‧混合部
105‧‧‧供應流路
111‧‧‧控制閥
112‧‧‧控制閥
113‧‧‧控制閥
200‧‧‧曝光裝置1‧‧‧
[圖1] 就第1實施方式的曝光裝置的構成進行繪示的圖。 [圖2] 就供應部的構成進行繪示的圖。 [圖3] 就第2實施方式的曝光裝置的構成進行繪示的圖。[Fig. 1] A diagram showing the configuration of the exposure apparatus of the first embodiment. [Figure 2] A diagram depicting the composition of the supply unit. [Fig. 3] A diagram showing the configuration of the exposure apparatus of the second embodiment.
1‧‧‧遮罩 1‧‧‧Mask
2‧‧‧照明光學系統 2‧‧‧Illumination optical system
3‧‧‧遮罩台 3‧‧‧Mask
4‧‧‧投影光學系統 4‧‧‧Projection optical system
5‧‧‧抗蝕層 5‧‧‧Resist layer
6‧‧‧基板 6‧‧‧Substrate
7‧‧‧基板載台 7‧‧‧Substrate stage
8‧‧‧供應部 8‧‧‧Supply Department
9‧‧‧氧濃度計 9‧‧‧Oxygen concentration meter
10‧‧‧控制部 10‧‧‧Control Department
11‧‧‧腔室 11‧‧‧ Chamber
12‧‧‧環境氣體維持部 12‧‧‧Ambient Gas Maintenance Department
13‧‧‧記憶部 13‧‧‧Memory Department
100‧‧‧曝光裝置 100‧‧‧Exposure device
101‧‧‧第1流路 101‧‧‧First flow path
102‧‧‧第2流路 102‧‧‧Second flow path
103‧‧‧第3流路 103‧‧‧3rd flow path
104‧‧‧混合部 104‧‧‧Mixing Department
105‧‧‧供應流路 105‧‧‧Supply flow path
Claims (9)
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JP2018-035312 | 2018-02-28 | ||
JP2018035312A JP6976884B2 (en) | 2018-02-28 | 2018-02-28 | Exposure equipment and manufacturing method of goods |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001060548A (en) * | 1999-08-23 | 2001-03-06 | Nikon Corp | Exposure method and aligner |
US6731371B1 (en) * | 1999-10-21 | 2004-05-04 | Naomasa Shiraishi | Exposure method and apparatus, and method of fabricating a device |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE3378698D1 (en) * | 1982-04-12 | 1989-01-19 | Hitachi Ltd | Oxygen concentration control system |
EP1030351A1 (en) * | 1997-11-12 | 2000-08-23 | Nikon Corporation | Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses |
JPH11195583A (en) * | 1997-12-26 | 1999-07-21 | Nikon Corp | Aligner |
JP2001102290A (en) * | 1999-09-30 | 2001-04-13 | Nikon Corp | Exposure method and aligner thereof |
JP2003173964A (en) * | 2001-12-07 | 2003-06-20 | Canon Inc | Exposure system |
JP2007094066A (en) | 2005-09-29 | 2007-04-12 | Toppan Printing Co Ltd | Proximity exposure apparatus and proximity exposure method |
JP5568960B2 (en) * | 2009-11-17 | 2014-08-13 | 大日本印刷株式会社 | Pattern formation method by nanoimprint |
JP5936328B2 (en) * | 2010-10-22 | 2016-06-22 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
JP6099969B2 (en) * | 2012-12-27 | 2017-03-22 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
JP6238580B2 (en) * | 2013-06-07 | 2017-11-29 | キヤノン株式会社 | Exposure apparatus, exposure method, and device manufacturing method using them |
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JP2001060548A (en) * | 1999-08-23 | 2001-03-06 | Nikon Corp | Exposure method and aligner |
US6731371B1 (en) * | 1999-10-21 | 2004-05-04 | Naomasa Shiraishi | Exposure method and apparatus, and method of fabricating a device |
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