TWI706393B - Array substrate - Google Patents
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- TWI706393B TWI706393B TW108129889A TW108129889A TWI706393B TW I706393 B TWI706393 B TW I706393B TW 108129889 A TW108129889 A TW 108129889A TW 108129889 A TW108129889 A TW 108129889A TW I706393 B TWI706393 B TW I706393B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16755—Substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
Description
本揭露是關於一種陣列基板。 The disclosure relates to an array substrate.
隨著科技的進步,顯示器的技術也不斷地發展。舉例來說,顯示器的種類有液晶顯示器(LCD)、有機發光顯示器(OLED)及電泳顯示器(EPD),並被廣泛地應用於各式電子產品,例如智慧型手機、筆記型電腦及平板電腦等。 With the advancement of science and technology, the technology of displays has also been continuously developed. For example, the types of displays include liquid crystal displays (LCD), organic light emitting displays (OLED), and electrophoretic displays (EPD), and are widely used in various electronic products, such as smart phones, notebook computers, and tablet computers, etc. .
為了降低製程成本,可透過切割大尺寸顯示器以獲得各種小尺寸的顯示器的方式,來免除不同尺寸之光罩成本。大尺寸矩形顯示器之元件配置可為將數個源極驅動電路設置於顯示器之上下側,並將數個閘極驅動電路設置於顯示器之左右側,以達到可任意切割的效果。而近年來,顯示器的應用擴展到穿戴式顯示器、公共號誌等領域,使得對非矩形的顯示器的需求快速地成長。一般而言,圓形顯示器的閘極驅動電路及源極驅動電路沿著圓周設置,若想要透過切割大尺寸的圓形顯示器來獲得各種小尺寸的圓形顯示器,圓形的切割線會切斷部分的閘極驅動電路與源極驅動電路與顯示器之線路的連接,而使得顯示器的部分區域無法正常顯示。 In order to reduce the cost of the manufacturing process, the cost of masks of different sizes can be avoided by cutting large-size displays to obtain various small-size displays. The element configuration of the large-size rectangular display can be that several source driving circuits are arranged on the upper and lower sides of the display, and several gate driving circuits are arranged on the left and right sides of the display to achieve the effect of arbitrarily cutting. In recent years, the application of displays has been extended to wearable displays, public signs and other fields, making the demand for non-rectangular displays grow rapidly. Generally speaking, the gate drive circuit and the source drive circuit of the circular display are arranged along the circumference. If you want to cut the large circular display to obtain various small circular displays, the circular cutting line will cut The connection between the gate drive circuit and the source drive circuit and the circuit of the display is broken, so that part of the display cannot be displayed normally.
本揭露提供一種陣列基板,其可達到非矩形陣列基板之非矩形切割尺寸彈性化的優點。 The present disclosure provides an array substrate, which can achieve the advantage of flexible non-rectangular cutting size of the non-rectangular array substrate.
本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元、至少一條第一資料訊號傳輸線及至少一條第二資料訊號傳輸線。掃描線與資料線相交。各畫素單元與資料線及掃描線電性連接。第一資料訊號傳輸線與掃描線相交。第二資料訊號傳輸線設置於基板上且與資料線相交,第一資料訊號傳輸線透過第一資料通孔電性連接第二資料訊號傳輸線。第二資料訊號傳輸線透過第二資料通孔電性連接資料線。 The array substrate disclosed in the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units, at least one first data signal transmission line and at least one second data signal transmission line arranged on the substrate. The scan line intersects the data line. Each pixel unit is electrically connected to the data line and the scan line. The first data signal transmission line intersects the scan line. The second data signal transmission line is arranged on the substrate and intersects the data line. The first data signal transmission line is electrically connected to the second data signal transmission line through the first data through hole. The second data signal transmission line is electrically connected to the data line through the second data via.
本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元及至少一條掃描訊號傳輸線。基板具有主動區及環繞主動區之周邊區。掃描線與資料線相交。各畫素單元與資料線及掃描線電性連接。掃描訊號傳輸線與掃描線相交。掃描訊號傳輸線與掃描線透過掃描通孔電性連接,且掃描通孔位於周邊區。 The array substrate disclosed in the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units and at least one scan signal transmission line arranged on the substrate. The substrate has an active area and a peripheral area surrounding the active area. The scan line intersects the data line. Each pixel unit is electrically connected to the data line and the scan line. The scanning signal transmission line intersects the scanning line. The scanning signal transmission line and the scanning line are electrically connected through the scanning through hole, and the scanning through hole is located in the peripheral area.
本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元及至少一條第一資料訊號傳輸線。基板具有主動區與環繞主動區之周邊區。主動區具有第一畫素區與位於第一畫素區之相對二側的第二畫素區,基板定義有通過基板之中心的中心線。中心線通過第一畫素區,且中心線與第二畫素區之間沿著第一方向具有間隔。資料線沿著第二方向延伸,第二方向與第一方向相交。掃描線沿 著第一方向延伸。各畫素單元與資料線及掃描線電性連接。第一資料訊號傳輸線位於第一畫素區且沿著第二方向延伸。第一資料訊號傳輸線不位於第二畫素區。第一資料訊號傳輸線與第二資料訊號傳輸線透過第一資料通孔電性連接。 The array substrate of the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units and at least one first data signal transmission line arranged on the substrate. The substrate has an active area and a peripheral area surrounding the active area. The active area has a first pixel area and a second pixel area located on two opposite sides of the first pixel area, and the substrate defines a center line passing through the center of the substrate. The center line passes through the first pixel area, and there is an interval between the center line and the second pixel area along the first direction. The data line extends along a second direction, and the second direction intersects the first direction. Scan line Extend in the first direction. Each pixel unit is electrically connected to the data line and the scan line. The first data signal transmission line is located in the first pixel area and extends along the second direction. The first data signal transmission line is not located in the second pixel area. The first data signal transmission line and the second data signal transmission line are electrically connected through the first data via.
本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元、至少一條第一掃描訊號傳書線及至少一條第二掃描訊號傳輸線。基板定義有沿著第一方向延伸之第一基準線及沿著第二方向延伸之第二基準線。第一方向實質上垂直於第二方向。第一基準線及第二基準線將基板區隔為第一子區域、第二子區域、第三子區域及第四子區域。資料線實質上平行於第二方向。掃描線實質上平行於第一方向。各該畫素單元與資料線及掃描線電性連接。第一掃描訊號傳輸線實質上平行於第二方向。第一掃描訊號傳輸線與掃描線透過第一掃描通孔電性連接。第二掃描訊號傳輸線實質上平行於第一方向。第二掃描訊號傳輸線與掃描線透過第二掃描通孔電性連接。 The array substrate of the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units, at least one first scan signal transmission line and at least one second scan signal transmission line arranged on the substrate. The substrate defines a first reference line extending along the first direction and a second reference line extending along the second direction. The first direction is substantially perpendicular to the second direction. The first reference line and the second reference line partition the substrate into a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region. The data line is substantially parallel to the second direction. The scan line is substantially parallel to the first direction. Each pixel unit is electrically connected to the data line and the scan line. The first scanning signal transmission line is substantially parallel to the second direction. The first scan signal transmission line and the scan line are electrically connected through the first scan through hole. The second scanning signal transmission line is substantially parallel to the first direction. The second scan signal transmission line and the scan line are electrically connected through the second scan through hole.
基於上述,在本揭露的陣列基板中,透過設置第一資料訊號傳輸線及第二資料訊號傳輸線,達到傳遞資料訊號的效果及陣列基板之非矩形切割尺寸彈性化的優點。並且,藉由設置掃描訊號傳輸線,達到藉此達到傳遞掃描訊號的效果及陣列基板之非矩形切割尺寸彈性化的優點。 Based on the above, in the array substrate of the present disclosure, by arranging the first data signal transmission line and the second data signal transmission line, the data signal transmission effect and the advantages of flexibility of the non-rectangular cutting size of the array substrate are achieved. Moreover, by providing the scanning signal transmission line, the effect of transmitting the scanning signal and the flexibility of the non-rectangular cutting size of the array substrate are achieved.
100、100’、100”、100a、100b、100c、100d‧‧‧陣列基板 100, 100’, 100”, 100a, 100b, 100c, 100d‧‧‧Array substrate
102‧‧‧基板 102‧‧‧Substrate
104‧‧‧源極驅動電路 104‧‧‧Source drive circuit
104a‧‧‧第一組 104a‧‧‧First group
104b‧‧‧第二組 104b‧‧‧The second group
106‧‧‧閘極驅動電路 106‧‧‧Gate drive circuit
106a‧‧‧第一組 106a‧‧‧The first group
106b‧‧‧第二組 106b‧‧‧The second group
108’、108”‧‧‧預切割線 108’、108”‧‧‧Pre-cutting line
110‧‧‧第一資料訊號傳輸線 110‧‧‧First data signal transmission line
112‧‧‧第二資料訊號傳輸線 112‧‧‧Second data signal transmission line
114‧‧‧第一掃描訊號傳輸線 114‧‧‧First scan signal transmission line
116‧‧‧輔助線 116‧‧‧Auxiliary Line
118‧‧‧第二掃描訊號傳輸線 118‧‧‧Second scan signal transmission line
120‧‧‧橋接線 120‧‧‧Bridge connection
200、202、204‧‧‧方向 200, 202, 204‧‧‧ direction
300、302‧‧‧方向 300, 302‧‧‧ direction
400、402、404‧‧‧方向 400, 402, 404‧‧‧ direction
600、602‧‧‧方向 600, 602‧‧‧ direction
AA、AA’、AA”‧‧‧主動區 AA, AA’, AA"‧‧‧active area
A-A‧‧‧剖線 Section A-A‧‧‧
BL1‧‧‧第一基準線 BL1‧‧‧First Baseline
BL2‧‧‧第二基準線 BL2‧‧‧Second Baseline
BTH‧‧‧橋接通孔 BTH‧‧‧Bridge through hole
C‧‧‧中心 C‧‧‧Center
CL‧‧‧中心線 CL‧‧‧Centerline
D1‧‧‧第一方向 D1‧‧‧First direction
D2‧‧‧第二方向 D2‧‧‧Second direction
DL‧‧‧資料線 DL‧‧‧Data line
DTH1‧‧‧第一資料通孔 DTH1‧‧‧First data through hole
DTH2‧‧‧第二資料通孔 DTH2‧‧‧Second data through hole
FR‧‧‧走線區 FR‧‧‧Wiring area
IN‧‧‧絕緣層 IN‧‧‧Insulation layer
NA、NA’、NA”‧‧‧周邊區 NA, NA’, NA"‧‧‧ Surrounding area
P1‧‧‧第一畫素區 P1‧‧‧The first pixel area
P2‧‧‧第二畫素區 P2‧‧‧Second pixel area
P3‧‧‧第三畫素區 P3‧‧‧The third pixel area
P4‧‧‧第四畫素區 P4‧‧‧Fourth pixel area
PE‧‧‧畫素電極 PE‧‧‧Pixel electrode
PE1‧‧‧第一畫素電極 PE1‧‧‧The first pixel electrode
PE2‧‧‧第二畫素電極 PE2‧‧‧Second pixel electrode
PU‧‧‧畫素單元 PU‧‧‧Pixel unit
PU1‧‧‧第一子畫素 PU1‧‧‧First sub-pixel
PU2‧‧‧第二子畫素 PU2‧‧‧Second sub-pixel
S1‧‧‧間隔 S1‧‧‧Interval
SL‧‧‧掃描線 SL‧‧‧Scan line
SL1‧‧‧第一掃描線 SL1‧‧‧First scan line
SL2‧‧‧第二掃描線 SL2‧‧‧Second scan line
SR1‧‧‧第一子區域 SR1‧‧‧First subregion
SR2‧‧‧第二子區域 SR2‧‧‧Second subregion
SR3‧‧‧第三子區域 SR3‧‧‧The third subregion
SR4‧‧‧第四子區域 SR4‧‧‧The fourth subregion
STH1‧‧‧第一掃描通孔 STH1‧‧‧First scan through hole
STH2‧‧‧第二掃描通孔 STH2‧‧‧Second scan through hole
T‧‧‧薄膜電晶體 T‧‧‧Thin Film Transistor
T1‧‧‧第一薄膜電晶體 T1‧‧‧The first thin film transistor
T2‧‧‧第二薄膜電晶體 T2‧‧‧Second thin film transistor
閱讀以下詳細敘述並搭配對應之圖式,可了解本 揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 Read the following detailed description and match the corresponding diagrams to understand this Multiple aspects of disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion.
第1A圖及第1B圖為依據本揭露一實施例的陣列基板的上視示意圖。 1A and 1B are schematic top views of an array substrate according to an embodiment of the disclosure.
第1C圖為第1B圖之區域R的放大示意圖。 Fig. 1C is an enlarged schematic diagram of area R in Fig. 1B.
第1D圖為第1C圖沿剖線A-A的剖面示意圖。 Figure 1D is a schematic cross-sectional view of Figure 1C along the section line A-A.
第1E圖繪示第1C圖之掃描線及第一掃描訊號傳輸線在陣列基板的上視示意圖。 FIG. 1E shows a schematic top view of the scan line and the first scan signal transmission line of FIG. 1C on the array substrate.
第2A圖及第2B圖為依據本揭露另一實施例的陣列基板的上視示意圖。 2A and 2B are schematic top views of an array substrate according to another embodiment of the disclosure.
第3圖為依據本揭露另一實施例的陣列基板的上視示意圖。 FIG. 3 is a schematic top view of an array substrate according to another embodiment of the disclosure.
第4A圖及第4B圖為依據本揭露另一實施例的陣列基板的上視示意圖。 4A and 4B are schematic top views of an array substrate according to another embodiment of the disclosure.
第5圖為依據本揭露另一實施例的陣列基板的上視示意圖。 FIG. 5 is a schematic top view of an array substrate according to another embodiment of the disclosure.
以下將以圖式及詳細說明清楚說明本揭露之精神,任何所屬技術領域中具有通常知識者在瞭解本揭露之實施例後,當可由本揭露所教示之技術,加以改變及修飾,其並不脫離本揭露之精神與範圍。舉例而言,敘述「第一特徵形成於第二特徵上方或上」,於實施例中將包含第一特徵及第二特徵 具有直接接觸;且也將包含第一特徵和第二特徵為非直接接觸,具有額外的特徵形成於第一特徵和第二特徵之間。此外,本揭露在多個範例中將重複使用元件標號以和/或文字。重複的目的在於簡化與釐清,而其本身並不會決定多個實施例以和/或所討論的配置之間的關係。 The following will clearly illustrate the spirit of the present disclosure with drawings and detailed descriptions. Anyone with ordinary knowledge in the relevant technical field can change and modify the techniques taught in the present disclosure after understanding the embodiments of the present disclosure. Depart from the spirit and scope of this disclosure. For example, the statement "the first feature is formed on or on the second feature" will include the first feature and the second feature in the embodiment Have direct contact; and also include the first feature and the second feature as indirect contact, with additional features formed between the first feature and the second feature. In addition, the present disclosure will reuse component numbers and/or text in multiple examples. The purpose of repetition is to simplify and clarify, and it does not determine the relationship between multiple embodiments and/or the discussed configurations.
此外,方位相對詞彙,如「在...之下」、「下面」、「下」、「上方」或「上」或類似詞彙,在本文中為用來便於描述繪示於圖式中的一個元件或特徵至另外的元件或特徵之關係。方位相對詞彙除了用來描述裝置在圖式中的方位外,其包含裝置於使用或操作下之不同的方位。當裝置被另外設置(旋轉90度或者其他面向的方位),本文所用的方位相對詞彙同樣可以相應地進行解釋。 In addition, relative terms such as "below", "below", "below", "above" or "up" or similar terms are used in this article to facilitate the description of the words shown in the diagram The relationship of one element or feature to another element or feature. In addition to describing the position of the device in the diagram, the relative position vocabulary includes the different positions of the device under use or operation. When the device is additionally set (rotated by 90 degrees or other facing orientation), the relative terms of the orientation used in this article can also be explained accordingly.
第1A圖及第1B圖為依據本揭露一實施例的陣列基板100的上視示意圖。第1B圖與第1A圖之差異為第1B圖還繪示了預切割線108’及預切割線108”。請同時參照第1A圖及第1B圖,本揭露實施例的陣列基板100包括基板102、源極驅動電路104及閘極驅動電路106。源極驅動電路104及閘極驅動電路106設置於陣列基板100之一側。須說明的是,本說明書圖中所繪的源極驅動電路104及閘極驅動電路106的數量僅用以舉例說明本揭露,而非用以限制本揭露。於其他實施例中,源極驅動電路104及閘極驅動電路106的數量也可以是其他適當數量。
1A and 1B are schematic top views of an
基板102的形狀為非矩形,於本實施例中,基板102的形狀為圓形。基板102具有主動區AA及環繞該主動區AA
之周邊區NA。可沿著預切割線108’切割陣列基板100,藉此得到具有縮小的尺寸的非矩形的陣列基板100’,陣列基板100’具有對應的主動區AA’及環繞主動區AA’之周邊區NA’。或是可沿著預切割線108”切割陣列基板100,藉此得到具有另一縮小的尺寸的非矩形的陣列基板100”,陣列基板100”具有對應的主動區AA”及環繞主動區AA”之周邊區NA”。於本實施例中,預切割線108’、108”為非矩形。舉例而言,預切割線108’、108”為圓形。在一實施例中,基板102為透明基板。舉例而言,基板102的材料可包括玻璃。
The shape of the
為了方便說明,圖中繪示了第一方向D1與第二方向D2,且第一方向D1與第二方向D2相異,例如第一方向D1與第二方向D2分別為第1A圖及第1B圖的橫向方向與縱向方向,且其彼此呈正交關係。主動區AA具有第一畫素區P1與位於第一畫素區P1之相對二側的第二畫素區P2,第一畫素區P1比第二畫素區P2更靠近陣列基板100之中心C。換言之,基板102定義有中心線CL,中心線CL通過陣列基板100之中心C、閘極驅動電路106及源極驅動電路104,中心線CL通過第一畫素區P1,且中心線CL與第二畫素區P2沿第一方向D1之間有最小間隔S1。周邊區NA還包括走線區FR,走線區FR位於源極驅動電路104及第一畫素區P1之間,走線區FR內設有扇出線路(未繪示)。第一畫素區P1及第二畫素區P2透過扇出線路電性連接閘極驅動電路106及源極驅動電路104。
For the convenience of description, the figure shows the first direction D1 and the second direction D2, and the first direction D1 and the second direction D2 are different, for example, the first direction D1 and the second direction D2 are respectively the 1A and 1B The horizontal and vertical directions of the figure are orthogonal to each other. The active area AA has a first pixel area P1 and a second pixel area P2 located on two opposite sides of the first pixel area P1. The first pixel area P1 is closer to the center of the
第1C圖為第1B圖之區域R的放大示意圖,第1D圖為第1C圖沿剖線A-A的剖面示意圖,請同時參照第1B圖、
第1C圖及第1D圖。區域R涵蓋第一畫素區P1及第二畫素區P2。第一畫素區P1包括設置於基板102上的多條資料線DL、多條掃描線SL、多個畫素單元PU、至少一條第一資料訊號傳輸線110、至少一條第二資料訊號傳輸線112、至少一條第一掃描訊號傳輸線114及輔助線116。第二畫素區P2包括設置於基板102上的多條資料線DL、多條掃描線SL、多個畫素單元PU、至少一條第二資料訊號傳輸線112及至少一條第一掃描訊號傳輸線114。也就是說,第一資料訊號傳輸線110及輔助線116不位於第二畫素區P2。各畫素單元PU電性連接資料線DL及掃描線SL。畫素單元PU沿著第一方向D1與第二方向D2呈陣列排列,並且每一畫素單元PU包括彼此電性連接的多個薄膜電晶體T及多個畫素電極PE。此外,畫素單元PU可包括一或多個電容器(未繪),且電容器可電性連接於薄膜電晶體T及/或畫素電極PE。
Figure 1C is an enlarged schematic view of area R in Figure 1B, Figure 1D is a schematic cross-sectional view of Figure 1C along the section line A-A, please refer to Figure 1B,
Figure 1C and Figure 1D. The area R covers the first pixel area P1 and the second pixel area P2. The first pixel area P1 includes a plurality of data lines DL, a plurality of scan lines SL, a plurality of pixel units PU, at least one first data
資料線DL與掃描線SL相交,於本實施例中,掃描線SL及第二資料訊號傳輸線112沿著第一方向D1延伸,資料線DL、第一資料訊號傳輸線110、輔助線116、第一掃描訊號傳輸線114沿著第二方向D2延伸。掃描線SL及第二資料訊號傳輸線112由位於基板102上的第一圖案化導電層所形成,資料線DL、第一資料訊號傳輸線110、輔助線116及第一掃描訊號傳輸線114由位於基板102上的第二圖案化導電層所形成,其中第一圖案化導電層與第二圖案化導電層位於不同膜層。第一圖案化導電層與第二圖案化導電層之間具有絕緣層IN。
The data line DL intersects the scan line SL. In this embodiment, the scan line SL and the second data
第一資料訊號傳輸線110相交於掃描線SL及第二
資料訊號傳輸線112,第一資料訊號傳輸線110透過第一資料通孔DTH1電性連接於第二資料訊號傳輸線112。第二資料訊號傳輸線112透過第二資料通孔DTH2電性連接於資料線DL。如此一來,即使位於第二畫素區P2的資料線DL被預切割線108’、108”截斷,來自源極驅動電路104的資料訊號仍可依序經由第一資料訊號傳輸線110、第二資料訊號傳輸線112及資料線DL傳遞資料訊號給第二畫素區P2的畫素單元PU,藉此達到可任意切割非矩形的陣列基板100以獲得不同非矩形尺寸的陣列基板100的優點,也就是說,可任意切割圓形尺寸的陣列基板100,以獲得具有縮小的圓形尺寸的陣列基板100的優點。於本實施例中,位於第二畫素區P2的每一資料線DL搭配一條第一資料訊號傳輸線110及一條第二資料訊號傳輸線112,也就是說,第一資料訊號傳輸線110之數量與第二資料訊號傳輸線112之數量相同,以達到傳遞資料訊號的效果。
The first data
相鄰兩條資料線DL傳輸的資料訊號彼此電位極性不同,意即當地2M+1條資料線DL(奇數條資料線DL)傳輸的資料訊號為正電位,第2M條資料線DL(偶數條資料線DL)傳輸的資料訊號則是負電位,反之亦然,其中M為正整數。輔助線116及其中一條相鄰的資料線DL(例如輔助線116右側的資料線DL)之間具有第一資料訊號傳輸線110,輔助線116及另一條相鄰的資料線DL(例如輔助線116左側的資料線DL)之間具有畫素單元PU,於本實施例中,輔助線116電性連接此相鄰的資料線DL(即輔助線116左側的資料線DL),換言之,輔助線116的電位與此相鄰的資料線DL的電位彼此極性相同。如此一
來,可避免第一資料訊號傳輸線110之間的電容耦合效應(Couple Effect)干擾資料線DL,以固定資料線DL的電位差值,使畫素單元PU呈現所需求的灰階。
The data signals transmitted by two adjacent data lines DL have different potential polarities, which means that the data signals transmitted by the local 2M+1 data lines DL (odd-numbered data lines DL) have positive potentials, and the 2M-th data line DL (even-numbered data lines) The data signal transmitted by the data line DL) is negative, and vice versa, where M is a positive integer. Between the
為了說明,第1E圖繪示第1C圖之掃描線SL及第一掃描訊號傳輸線114在陣列基板100的上視示意圖,為求清晰,第1E圖省略繪示其他電路元件(例如資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112及源極驅動電路104)。請同時參照第1E圖及第1C圖。在本實施例中,陣列基板100採用閘極驅動電路106進行單邊單驅的掃描方式。第一掃描訊號傳輸線114與掃描線SL透過第一掃描通孔STH1彼此電性連接。基板102上定義有預切割線108’、108”,如前所述,於此不再贅述。當沿著預切割線108’切割陣列基板100得到陣列基板100’,一部分的第一掃描通孔STH1位於周邊區NA’,且另一部分的第一掃描通孔STH1位於主動區AA’。當沿著預切割線108”切割陣列基板100得到陣列基板100”,一部分的第一掃描通孔STH1位於周邊區NA”,且另一部分的第一掃描通孔STH1位於主動區AA”。透過設置第一掃描訊號傳輸線114,即使預切割線108’、108”切斷掃描線SL,閘極驅動電路106的閘極訊號仍可依序經由第一掃描訊號傳輸線114及掃描線SL來傳遞給對應的畫素單元PU。
For illustration, FIG. 1E shows a schematic top view of the scan line SL and the first scan
第2A圖及第2B圖為依據本揭露另一實施例的陣列基板100a的上視示意圖。第2A、2B圖與第1E圖之差異在於第2A圖及第2B圖的閘極驅動電路106是雙閘極驅動電路,陣列基板100a採用雙邊雙驅的掃描方式,走線區FR位於陣列基板
100a之上側的周邊區NA及下側的周邊區NA。如此一來,預切割線108’、108”的位置可以靠近上側的閘極驅動電路106或是靠近下側的閘極驅動電路106,如此一來,可達到非矩形的陣列基板100a之非矩形切割尺寸彈性化的優點,也就是說,可任意切割圓形的陣列基板100a,以獲得具有不同的圓形尺寸的陣列基板100a的優點。
2A and 2B are schematic top views of an
第3圖為依據本揭露另一實施例的陣列基板100b的上視示意圖。請參照第3圖,陣列基板100b為使用三閘極(tri gate)架構驅動之陣列基板100b,其畫素單元PU排列方式為同一條資料線DL電性連接之主動元件(例如薄膜電晶體T)是沿著行方向(即第二方向D2)於資料線DL的兩側交替排列,源極驅動電路104(未繪示)以行反轉的方式來驅動陣列基板100b,在此架構下,掃描線SL的數量增加,資料線DL的數量減少,源極驅動電路104的數量也減少,可降低功耗及節省成本,其中第一資料訊號傳輸線110之數量為第二資料訊號傳輸線112之數量的三倍。陣列基板100b還包括橋接線120,橋接線120沿著第一方向D1延伸,並且,橋接線120相交於第一掃描訊號傳輸線114。於本實施例中,橋接線120與掃描線SL為同一膜層。橋接線120透過橋接通孔BTH電性連接資料線DL,使得源極驅動電路104(未繪示)的資料訊號經由資料線DL及橋接線120傳遞給部分的畫素單元PU,以達到傳遞資料訊號的效果。
FIG. 3 is a schematic top view of an
第4A圖及第4B圖為依據本揭露另一實施例的陣列基板100c的上視示意圖。第4A圖、第4B圖與第1A圖至第1E圖之差異在於陣列基板100c還包括第二掃描訊號傳輸線118,
基板102定義有第一基準線BL1及第二基準線BL2。於本實施例中,第一基準線BL1實質上平行於第二方向D2,第二基準線BL2實質上平行於第一方向D1,且第二基準線BL2實質上垂直於第一基準線BL1。第一基準線BL1與中心線CL之夾角α在約42度至約48度的範圍中,第二基準線BL2與中心線CL之間的夾角β在約42度至約48度的範圍中。
4A and 4B are schematic top views of an
陣列基板100c之第一畫素區P1的位置在第一基準線BL1之右側,第二畫素區P2的位置在第一基準線BL1之左側。為求清晰,第4A圖繪示陣列基板100c的資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112及源極驅動電路104。第4B圖繪示陣列基板100c的掃描線SL、第一掃描訊號傳輸線114、第二掃描訊號傳輸線118及閘極驅動電路106。請先參照第4A圖,第一基準線BL1及第二基準線BL2將陣列基板100c區隔為第一子區域SR1、第二子區域SR2、第三子區域SR3及第四子區域SR4,源極驅動電路104設置於陣列基板100c的第一子區域SR1的一側。源極驅動電路104包括第一組104a及第二組104b,第一組104a比第二組104b更靠近第一基準線BL1。源極驅動電路104的第一組104a的資料訊號依序經由第一資料訊號傳輸線110(例如朝方向200)、第二資料訊號傳輸線112(例如朝方向202)及資料線DL(例如朝方向204)傳遞給第一畫素區P1的畫素單元PU,如第1C圖所述,於此不再重複贅述。源極驅動電路104的第二組104b的資料訊號依序經由第二資料訊號傳輸線112(例如朝方向300)及資料線DL(例如朝方向302)傳遞給第二畫素區P2的畫素單元PU。換言之源極驅動
電路104的第一組104a控制第一畫素區P1的畫素單元PU,源極驅動電路104的第二組104b控制第二畫素區P2的畫素單元PU。藉此達到可任意切割非矩形的陣列基板100c以獲得不同非矩形尺寸的陣列基板100c的優點,也就是說,可任意切割圓形的陣列基板100c,以獲得具有不同的圓形尺寸的陣列基板100c的優點。
The position of the first pixel area P1 of the
接著請參照第4B圖。閘極驅動電路106設置於陣列基板100c之第一子區域SR1的一側。陣列基板100c還可區分為第三畫素區P3及第四畫素區P4。第三畫素區P3的位置在第二基準線BL2之上側,第四畫素區P4的位置在第二基準線BL2之下側。閘極驅動電路106包括第一組106a及第二組106b。第一組106a比第二組106b更靠近第二基準線BL2。於本實施例中,第二掃描訊號傳輸線118沿著第一方向D1延伸,換言之,第二掃描訊號傳輸線118實質上平行於掃描線SL,且第二掃描訊號傳輸線118與第一掃描訊號傳輸線114相交,其中第二掃描訊號傳輸線118與第一掃描訊號傳輸線114透過第二掃描通孔STH2電性連接。閘極驅動電路106的第一組106a的掃描訊號依序經由第二掃描訊號傳輸線118(例如朝方向400)、第一掃描訊號傳輸線114(例如朝方向402)及掃描線SL(例如朝方向404)傳遞給第三畫素區P3的畫素單元PU。閘極驅動電路106的第二組106b的掃描訊號依序經由第一掃描訊號傳輸線114(例如朝方向600)及掃描線SL(例如朝方向602)傳遞給第四畫素區P4的畫素單元PU,如第1E圖所述,於此不再重複贅述。換言之,閘極驅動電路106的第一組106a控制第三畫素區P3的畫素單
元PU,閘極驅動電路106的第二組106b控制第四畫素區P4的畫素單元PU,藉此達到傳遞掃描訊號的效果及陣列基板100c之非矩形切割尺寸彈性化的優點。也就是說,藉此達到可任意切割非矩形的陣列基板100c以獲得具有不同非矩形尺寸的陣列基板100c的優點,於本實施例中,可任意切割圓形的陣列基板100c,以獲得不同的圓形尺寸的陣列基板100c的優點。
Then please refer to Figure 4B. The
第5圖為依據本揭露另一實施例的陣列基板100d的上視示意圖。請參照第5圖,陣列基板100d包括畫素單元PU、第一掃描線SL1、第二掃描線SL2、資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112、第一掃描訊號傳輸線114及橋接線120。第一掃描訊號傳輸線114位於第一資料訊號傳輸線110之相對二側。畫素單元PU包括第一子畫素PU1與第二子畫素PU2。第一子畫素PU1包括第一掃描線SL1、資料線DL、第一薄膜電晶體T1、第一畫素電極PE1。第二子畫素PU2包括第二掃描線SL2、資料線DL、第二薄膜電晶體T2及第二畫素電極PE2。根據本實施例,第一子畫素PU1及第二子畫素PU2共用同一條資料線DL(未繪示),以形成半源極驅動(half source driving,HSD)畫素架構。橋接線120沿著第一方向D1延伸,並且,橋接線120相交於第一資料訊號傳輸線110及第一掃描訊號傳輸線114。於本實施例中,橋接線120與掃描線SL為同一膜層。橋接線120透過橋接通孔BTH電性連接第一資料訊號傳輸線110,使得源極驅動電路104(未繪示)的資料訊號依序經由第一資料訊號傳輸線110及橋接線120傳遞給畫素單元PU的第一子畫素PU1及第二子畫素PU2,以達到傳遞資料
訊號的效果。如此一來,達到可任意切割非矩形的陣列基板100d以獲得不同非矩形尺寸的陣列基板100d的優點,也就是說,可任意切割圓形的陣列基板100d,以獲得不同的圓形尺寸的陣列基板100d的優點。
FIG. 5 is a schematic top view of an
綜上所述,本揭露的實施例的陣列基板,藉由設置第一資料訊號傳輸線及第二資料訊號傳輸線,達到傳遞資料訊號的效果及非矩形陣列基板之非矩形切割尺寸彈性化的優點。並且,藉由設置掃描訊號傳輸線,達到藉此達到傳遞掃描訊號的效果及非矩形陣列基板之非矩形切割尺寸彈性化的優點。 In summary, the array substrate of the embodiment of the present disclosure has the first data signal transmission line and the second data signal transmission line to achieve the effect of transmitting data signals and the advantage of flexibility in the non-rectangular cutting size of the non-rectangular array substrate. In addition, by providing the scanning signal transmission line, the effect of transmitting the scanning signal and the flexibility of the non-rectangular cutting size of the non-rectangular array substrate are achieved.
以上概述數個實施方式或實施例的特徵,使所屬領域中具有通常知識者可以從各個方面更加瞭解本揭露。本技術領域中具有通常知識者應可理解,且可輕易地以本揭露為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/或達到在此介紹的實施方式或實施例相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本揭露的揭露精神與範圍。在不背離本揭露的精神與範圍之前提下,可對本揭露進行各種改變、置換或修改。 The above summarizes the characteristics of several implementations or embodiments, so that those with ordinary knowledge in the field can better understand the present disclosure from various aspects. Those skilled in the art should understand, and can easily design or modify other processes and structures based on this disclosure, so as to achieve the same purpose and/or to achieve the implementation modes or embodiments introduced herein The same advantages. Those skilled in the art should also understand that these equivalent structures do not deviate from the spirit and scope of the disclosure. Without departing from the spirit and scope of this disclosure, various changes, substitutions or modifications can be made to this disclosure.
110‧‧‧第一資料訊號傳輸線 110‧‧‧First data signal transmission line
112‧‧‧第二資料訊號傳輸線 112‧‧‧Second data signal transmission line
114‧‧‧第一掃描訊號傳輸線 114‧‧‧First scan signal transmission line
116‧‧‧輔助線 116‧‧‧Auxiliary Line
A-A‧‧‧剖線 Section A-A‧‧‧
D1‧‧‧第一方向 D1‧‧‧First direction
D2‧‧‧第二方向 D2‧‧‧Second direction
DL‧‧‧資料線 DL‧‧‧Data line
DTH1‧‧‧第一資料通孔 DTH1‧‧‧First data through hole
DTH2‧‧‧第二資料通孔 DTH2‧‧‧Second data through hole
P1‧‧‧第一畫素區 P1‧‧‧The first pixel area
P2‧‧‧第二畫素區 P2‧‧‧Second pixel area
PE‧‧‧畫素電極 PE‧‧‧Pixel electrode
PU‧‧‧畫素單元 PU‧‧‧Pixel unit
R‧‧‧區域 R‧‧‧Region
SL‧‧‧掃描線 SL‧‧‧Scan line
STH1‧‧‧第一掃描通孔 STH1‧‧‧First scan through hole
T‧‧‧薄膜電晶體 T‧‧‧Thin Film Transistor
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