TWI706393B - Array substrate - Google Patents

Array substrate Download PDF

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Publication number
TWI706393B
TWI706393B TW108129889A TW108129889A TWI706393B TW I706393 B TWI706393 B TW I706393B TW 108129889 A TW108129889 A TW 108129889A TW 108129889 A TW108129889 A TW 108129889A TW I706393 B TWI706393 B TW I706393B
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Taiwan
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signal transmission
data
substrate
line
transmission line
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TW108129889A
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Chinese (zh)
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TW202109480A (en
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徐雅玲
鍾岳宏
李珉澤
鄭聖諺
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友達光電股份有限公司
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Priority to TW108129889A priority Critical patent/TWI706393B/en
Priority to CN202010144604.9A priority patent/CN111352265B/en
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Publication of TWI706393B publication Critical patent/TWI706393B/en
Publication of TW202109480A publication Critical patent/TW202109480A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133351Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675Constructional details
    • G02F1/16755Substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Abstract

An array substrate includes a substrate and data lines, scan lines, pixel units, at least one first data signal transmission line and at least one second data signal transmission line on the substrate. The scan lines cross the data lines. Each pixel unit is electrically connected to the data line and the scan line. The first data signal transmission line crosses the scan lines. The second data signal transmission line crosses the data line. The first data signal transmission line is electrically connected to the second data signal transmission line through a first data through hole. The second data signal transmission line is electrically connected to the data line through a second data through hole.

Description

陣列基板 Array substrate

本揭露是關於一種陣列基板。 The disclosure relates to an array substrate.

隨著科技的進步,顯示器的技術也不斷地發展。舉例來說,顯示器的種類有液晶顯示器(LCD)、有機發光顯示器(OLED)及電泳顯示器(EPD),並被廣泛地應用於各式電子產品,例如智慧型手機、筆記型電腦及平板電腦等。 With the advancement of science and technology, the technology of displays has also been continuously developed. For example, the types of displays include liquid crystal displays (LCD), organic light emitting displays (OLED), and electrophoretic displays (EPD), and are widely used in various electronic products, such as smart phones, notebook computers, and tablet computers, etc. .

為了降低製程成本,可透過切割大尺寸顯示器以獲得各種小尺寸的顯示器的方式,來免除不同尺寸之光罩成本。大尺寸矩形顯示器之元件配置可為將數個源極驅動電路設置於顯示器之上下側,並將數個閘極驅動電路設置於顯示器之左右側,以達到可任意切割的效果。而近年來,顯示器的應用擴展到穿戴式顯示器、公共號誌等領域,使得對非矩形的顯示器的需求快速地成長。一般而言,圓形顯示器的閘極驅動電路及源極驅動電路沿著圓周設置,若想要透過切割大尺寸的圓形顯示器來獲得各種小尺寸的圓形顯示器,圓形的切割線會切斷部分的閘極驅動電路與源極驅動電路與顯示器之線路的連接,而使得顯示器的部分區域無法正常顯示。 In order to reduce the cost of the manufacturing process, the cost of masks of different sizes can be avoided by cutting large-size displays to obtain various small-size displays. The element configuration of the large-size rectangular display can be that several source driving circuits are arranged on the upper and lower sides of the display, and several gate driving circuits are arranged on the left and right sides of the display to achieve the effect of arbitrarily cutting. In recent years, the application of displays has been extended to wearable displays, public signs and other fields, making the demand for non-rectangular displays grow rapidly. Generally speaking, the gate drive circuit and the source drive circuit of the circular display are arranged along the circumference. If you want to cut the large circular display to obtain various small circular displays, the circular cutting line will cut The connection between the gate drive circuit and the source drive circuit and the circuit of the display is broken, so that part of the display cannot be displayed normally.

本揭露提供一種陣列基板,其可達到非矩形陣列基板之非矩形切割尺寸彈性化的優點。 The present disclosure provides an array substrate, which can achieve the advantage of flexible non-rectangular cutting size of the non-rectangular array substrate.

本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元、至少一條第一資料訊號傳輸線及至少一條第二資料訊號傳輸線。掃描線與資料線相交。各畫素單元與資料線及掃描線電性連接。第一資料訊號傳輸線與掃描線相交。第二資料訊號傳輸線設置於基板上且與資料線相交,第一資料訊號傳輸線透過第一資料通孔電性連接第二資料訊號傳輸線。第二資料訊號傳輸線透過第二資料通孔電性連接資料線。 The array substrate disclosed in the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units, at least one first data signal transmission line and at least one second data signal transmission line arranged on the substrate. The scan line intersects the data line. Each pixel unit is electrically connected to the data line and the scan line. The first data signal transmission line intersects the scan line. The second data signal transmission line is arranged on the substrate and intersects the data line. The first data signal transmission line is electrically connected to the second data signal transmission line through the first data through hole. The second data signal transmission line is electrically connected to the data line through the second data via.

本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元及至少一條掃描訊號傳輸線。基板具有主動區及環繞主動區之周邊區。掃描線與資料線相交。各畫素單元與資料線及掃描線電性連接。掃描訊號傳輸線與掃描線相交。掃描訊號傳輸線與掃描線透過掃描通孔電性連接,且掃描通孔位於周邊區。 The array substrate disclosed in the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units and at least one scan signal transmission line arranged on the substrate. The substrate has an active area and a peripheral area surrounding the active area. The scan line intersects the data line. Each pixel unit is electrically connected to the data line and the scan line. The scanning signal transmission line intersects the scanning line. The scanning signal transmission line and the scanning line are electrically connected through the scanning through hole, and the scanning through hole is located in the peripheral area.

本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元及至少一條第一資料訊號傳輸線。基板具有主動區與環繞主動區之周邊區。主動區具有第一畫素區與位於第一畫素區之相對二側的第二畫素區,基板定義有通過基板之中心的中心線。中心線通過第一畫素區,且中心線與第二畫素區之間沿著第一方向具有間隔。資料線沿著第二方向延伸,第二方向與第一方向相交。掃描線沿 著第一方向延伸。各畫素單元與資料線及掃描線電性連接。第一資料訊號傳輸線位於第一畫素區且沿著第二方向延伸。第一資料訊號傳輸線不位於第二畫素區。第一資料訊號傳輸線與第二資料訊號傳輸線透過第一資料通孔電性連接。 The array substrate of the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units and at least one first data signal transmission line arranged on the substrate. The substrate has an active area and a peripheral area surrounding the active area. The active area has a first pixel area and a second pixel area located on two opposite sides of the first pixel area, and the substrate defines a center line passing through the center of the substrate. The center line passes through the first pixel area, and there is an interval between the center line and the second pixel area along the first direction. The data line extends along a second direction, and the second direction intersects the first direction. Scan line Extend in the first direction. Each pixel unit is electrically connected to the data line and the scan line. The first data signal transmission line is located in the first pixel area and extends along the second direction. The first data signal transmission line is not located in the second pixel area. The first data signal transmission line and the second data signal transmission line are electrically connected through the first data via.

本揭露的陣列基板,包括基板及設置於基板上之多條資料線、多條掃描線、多個畫素單元、至少一條第一掃描訊號傳書線及至少一條第二掃描訊號傳輸線。基板定義有沿著第一方向延伸之第一基準線及沿著第二方向延伸之第二基準線。第一方向實質上垂直於第二方向。第一基準線及第二基準線將基板區隔為第一子區域、第二子區域、第三子區域及第四子區域。資料線實質上平行於第二方向。掃描線實質上平行於第一方向。各該畫素單元與資料線及掃描線電性連接。第一掃描訊號傳輸線實質上平行於第二方向。第一掃描訊號傳輸線與掃描線透過第一掃描通孔電性連接。第二掃描訊號傳輸線實質上平行於第一方向。第二掃描訊號傳輸線與掃描線透過第二掃描通孔電性連接。 The array substrate of the present disclosure includes a substrate and a plurality of data lines, a plurality of scan lines, a plurality of pixel units, at least one first scan signal transmission line and at least one second scan signal transmission line arranged on the substrate. The substrate defines a first reference line extending along the first direction and a second reference line extending along the second direction. The first direction is substantially perpendicular to the second direction. The first reference line and the second reference line partition the substrate into a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region. The data line is substantially parallel to the second direction. The scan line is substantially parallel to the first direction. Each pixel unit is electrically connected to the data line and the scan line. The first scanning signal transmission line is substantially parallel to the second direction. The first scan signal transmission line and the scan line are electrically connected through the first scan through hole. The second scanning signal transmission line is substantially parallel to the first direction. The second scan signal transmission line and the scan line are electrically connected through the second scan through hole.

基於上述,在本揭露的陣列基板中,透過設置第一資料訊號傳輸線及第二資料訊號傳輸線,達到傳遞資料訊號的效果及陣列基板之非矩形切割尺寸彈性化的優點。並且,藉由設置掃描訊號傳輸線,達到藉此達到傳遞掃描訊號的效果及陣列基板之非矩形切割尺寸彈性化的優點。 Based on the above, in the array substrate of the present disclosure, by arranging the first data signal transmission line and the second data signal transmission line, the data signal transmission effect and the advantages of flexibility of the non-rectangular cutting size of the array substrate are achieved. Moreover, by providing the scanning signal transmission line, the effect of transmitting the scanning signal and the flexibility of the non-rectangular cutting size of the array substrate are achieved.

100、100’、100”、100a、100b、100c、100d‧‧‧陣列基板 100, 100’, 100”, 100a, 100b, 100c, 100d‧‧‧Array substrate

102‧‧‧基板 102‧‧‧Substrate

104‧‧‧源極驅動電路 104‧‧‧Source drive circuit

104a‧‧‧第一組 104a‧‧‧First group

104b‧‧‧第二組 104b‧‧‧The second group

106‧‧‧閘極驅動電路 106‧‧‧Gate drive circuit

106a‧‧‧第一組 106a‧‧‧The first group

106b‧‧‧第二組 106b‧‧‧The second group

108’、108”‧‧‧預切割線 108’、108”‧‧‧Pre-cutting line

110‧‧‧第一資料訊號傳輸線 110‧‧‧First data signal transmission line

112‧‧‧第二資料訊號傳輸線 112‧‧‧Second data signal transmission line

114‧‧‧第一掃描訊號傳輸線 114‧‧‧First scan signal transmission line

116‧‧‧輔助線 116‧‧‧Auxiliary Line

118‧‧‧第二掃描訊號傳輸線 118‧‧‧Second scan signal transmission line

120‧‧‧橋接線 120‧‧‧Bridge connection

200、202、204‧‧‧方向 200, 202, 204‧‧‧ direction

300、302‧‧‧方向 300, 302‧‧‧ direction

400、402、404‧‧‧方向 400, 402, 404‧‧‧ direction

600、602‧‧‧方向 600, 602‧‧‧ direction

AA、AA’、AA”‧‧‧主動區 AA, AA’, AA"‧‧‧active area

A-A‧‧‧剖線 Section A-A‧‧‧

BL1‧‧‧第一基準線 BL1‧‧‧First Baseline

BL2‧‧‧第二基準線 BL2‧‧‧Second Baseline

BTH‧‧‧橋接通孔 BTH‧‧‧Bridge through hole

C‧‧‧中心 C‧‧‧Center

CL‧‧‧中心線 CL‧‧‧Centerline

D1‧‧‧第一方向 D1‧‧‧First direction

D2‧‧‧第二方向 D2‧‧‧Second direction

DL‧‧‧資料線 DL‧‧‧Data line

DTH1‧‧‧第一資料通孔 DTH1‧‧‧First data through hole

DTH2‧‧‧第二資料通孔 DTH2‧‧‧Second data through hole

FR‧‧‧走線區 FR‧‧‧Wiring area

IN‧‧‧絕緣層 IN‧‧‧Insulation layer

NA、NA’、NA”‧‧‧周邊區 NA, NA’, NA"‧‧‧ Surrounding area

P1‧‧‧第一畫素區 P1‧‧‧The first pixel area

P2‧‧‧第二畫素區 P2‧‧‧Second pixel area

P3‧‧‧第三畫素區 P3‧‧‧The third pixel area

P4‧‧‧第四畫素區 P4‧‧‧Fourth pixel area

PE‧‧‧畫素電極 PE‧‧‧Pixel electrode

PE1‧‧‧第一畫素電極 PE1‧‧‧The first pixel electrode

PE2‧‧‧第二畫素電極 PE2‧‧‧Second pixel electrode

PU‧‧‧畫素單元 PU‧‧‧Pixel unit

PU1‧‧‧第一子畫素 PU1‧‧‧First sub-pixel

PU2‧‧‧第二子畫素 PU2‧‧‧Second sub-pixel

S1‧‧‧間隔 S1‧‧‧Interval

SL‧‧‧掃描線 SL‧‧‧Scan line

SL1‧‧‧第一掃描線 SL1‧‧‧First scan line

SL2‧‧‧第二掃描線 SL2‧‧‧Second scan line

SR1‧‧‧第一子區域 SR1‧‧‧First subregion

SR2‧‧‧第二子區域 SR2‧‧‧Second subregion

SR3‧‧‧第三子區域 SR3‧‧‧The third subregion

SR4‧‧‧第四子區域 SR4‧‧‧The fourth subregion

STH1‧‧‧第一掃描通孔 STH1‧‧‧First scan through hole

STH2‧‧‧第二掃描通孔 STH2‧‧‧Second scan through hole

T‧‧‧薄膜電晶體 T‧‧‧Thin Film Transistor

T1‧‧‧第一薄膜電晶體 T1‧‧‧The first thin film transistor

T2‧‧‧第二薄膜電晶體 T2‧‧‧Second thin film transistor

閱讀以下詳細敘述並搭配對應之圖式,可了解本 揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 Read the following detailed description and match the corresponding diagrams to understand this Multiple aspects of disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion.

第1A圖及第1B圖為依據本揭露一實施例的陣列基板的上視示意圖。 1A and 1B are schematic top views of an array substrate according to an embodiment of the disclosure.

第1C圖為第1B圖之區域R的放大示意圖。 Fig. 1C is an enlarged schematic diagram of area R in Fig. 1B.

第1D圖為第1C圖沿剖線A-A的剖面示意圖。 Figure 1D is a schematic cross-sectional view of Figure 1C along the section line A-A.

第1E圖繪示第1C圖之掃描線及第一掃描訊號傳輸線在陣列基板的上視示意圖。 FIG. 1E shows a schematic top view of the scan line and the first scan signal transmission line of FIG. 1C on the array substrate.

第2A圖及第2B圖為依據本揭露另一實施例的陣列基板的上視示意圖。 2A and 2B are schematic top views of an array substrate according to another embodiment of the disclosure.

第3圖為依據本揭露另一實施例的陣列基板的上視示意圖。 FIG. 3 is a schematic top view of an array substrate according to another embodiment of the disclosure.

第4A圖及第4B圖為依據本揭露另一實施例的陣列基板的上視示意圖。 4A and 4B are schematic top views of an array substrate according to another embodiment of the disclosure.

第5圖為依據本揭露另一實施例的陣列基板的上視示意圖。 FIG. 5 is a schematic top view of an array substrate according to another embodiment of the disclosure.

以下將以圖式及詳細說明清楚說明本揭露之精神,任何所屬技術領域中具有通常知識者在瞭解本揭露之實施例後,當可由本揭露所教示之技術,加以改變及修飾,其並不脫離本揭露之精神與範圍。舉例而言,敘述「第一特徵形成於第二特徵上方或上」,於實施例中將包含第一特徵及第二特徵 具有直接接觸;且也將包含第一特徵和第二特徵為非直接接觸,具有額外的特徵形成於第一特徵和第二特徵之間。此外,本揭露在多個範例中將重複使用元件標號以和/或文字。重複的目的在於簡化與釐清,而其本身並不會決定多個實施例以和/或所討論的配置之間的關係。 The following will clearly illustrate the spirit of the present disclosure with drawings and detailed descriptions. Anyone with ordinary knowledge in the relevant technical field can change and modify the techniques taught in the present disclosure after understanding the embodiments of the present disclosure. Depart from the spirit and scope of this disclosure. For example, the statement "the first feature is formed on or on the second feature" will include the first feature and the second feature in the embodiment Have direct contact; and also include the first feature and the second feature as indirect contact, with additional features formed between the first feature and the second feature. In addition, the present disclosure will reuse component numbers and/or text in multiple examples. The purpose of repetition is to simplify and clarify, and it does not determine the relationship between multiple embodiments and/or the discussed configurations.

此外,方位相對詞彙,如「在...之下」、「下面」、「下」、「上方」或「上」或類似詞彙,在本文中為用來便於描述繪示於圖式中的一個元件或特徵至另外的元件或特徵之關係。方位相對詞彙除了用來描述裝置在圖式中的方位外,其包含裝置於使用或操作下之不同的方位。當裝置被另外設置(旋轉90度或者其他面向的方位),本文所用的方位相對詞彙同樣可以相應地進行解釋。 In addition, relative terms such as "below", "below", "below", "above" or "up" or similar terms are used in this article to facilitate the description of the words shown in the diagram The relationship of one element or feature to another element or feature. In addition to describing the position of the device in the diagram, the relative position vocabulary includes the different positions of the device under use or operation. When the device is additionally set (rotated by 90 degrees or other facing orientation), the relative terms of the orientation used in this article can also be explained accordingly.

第1A圖及第1B圖為依據本揭露一實施例的陣列基板100的上視示意圖。第1B圖與第1A圖之差異為第1B圖還繪示了預切割線108’及預切割線108”。請同時參照第1A圖及第1B圖,本揭露實施例的陣列基板100包括基板102、源極驅動電路104及閘極驅動電路106。源極驅動電路104及閘極驅動電路106設置於陣列基板100之一側。須說明的是,本說明書圖中所繪的源極驅動電路104及閘極驅動電路106的數量僅用以舉例說明本揭露,而非用以限制本揭露。於其他實施例中,源極驅動電路104及閘極驅動電路106的數量也可以是其他適當數量。 1A and 1B are schematic top views of an array substrate 100 according to an embodiment of the disclosure. The difference between Fig. 1B and Fig. 1A is that Fig. 1B also shows a pre-cut line 108' and a pre-cut line 108". Please refer to Fig. 1A and Fig. 1B at the same time, the array substrate 100 of the disclosed embodiment includes a substrate 102. The source drive circuit 104 and the gate drive circuit 106. The source drive circuit 104 and the gate drive circuit 106 are arranged on one side of the array substrate 100. It should be noted that the source drive circuit depicted in the figure in this specification The numbers of 104 and gate drive circuits 106 are only used to illustrate the present disclosure, but not to limit the present disclosure. In other embodiments, the numbers of source drive circuits 104 and gate drive circuits 106 may also be other appropriate numbers .

基板102的形狀為非矩形,於本實施例中,基板102的形狀為圓形。基板102具有主動區AA及環繞該主動區AA 之周邊區NA。可沿著預切割線108’切割陣列基板100,藉此得到具有縮小的尺寸的非矩形的陣列基板100’,陣列基板100’具有對應的主動區AA’及環繞主動區AA’之周邊區NA’。或是可沿著預切割線108”切割陣列基板100,藉此得到具有另一縮小的尺寸的非矩形的陣列基板100”,陣列基板100”具有對應的主動區AA”及環繞主動區AA”之周邊區NA”。於本實施例中,預切割線108’、108”為非矩形。舉例而言,預切割線108’、108”為圓形。在一實施例中,基板102為透明基板。舉例而言,基板102的材料可包括玻璃。 The shape of the substrate 102 is non-rectangular, and in this embodiment, the shape of the substrate 102 is circular. The substrate 102 has an active area AA and surrounds the active area AA The surrounding area NA. The array substrate 100 can be cut along the pre-cut line 108', thereby obtaining a non-rectangular array substrate 100' with a reduced size. The array substrate 100' has a corresponding active area AA' and a peripheral area NA surrounding the active area AA' '. Or the array substrate 100 can be cut along the pre-cut line 108" to obtain a non-rectangular array substrate 100" with another reduced size. The array substrate 100" has a corresponding active area AA" and a surrounding active area AA" The surrounding area NA". In this embodiment, the pre-cut lines 108', 108" are non-rectangular. For example, the pre-cut lines 108', 108" are circular. In one embodiment, the substrate 102 is a transparent substrate. For example, the material of the substrate 102 may include glass.

為了方便說明,圖中繪示了第一方向D1與第二方向D2,且第一方向D1與第二方向D2相異,例如第一方向D1與第二方向D2分別為第1A圖及第1B圖的橫向方向與縱向方向,且其彼此呈正交關係。主動區AA具有第一畫素區P1與位於第一畫素區P1之相對二側的第二畫素區P2,第一畫素區P1比第二畫素區P2更靠近陣列基板100之中心C。換言之,基板102定義有中心線CL,中心線CL通過陣列基板100之中心C、閘極驅動電路106及源極驅動電路104,中心線CL通過第一畫素區P1,且中心線CL與第二畫素區P2沿第一方向D1之間有最小間隔S1。周邊區NA還包括走線區FR,走線區FR位於源極驅動電路104及第一畫素區P1之間,走線區FR內設有扇出線路(未繪示)。第一畫素區P1及第二畫素區P2透過扇出線路電性連接閘極驅動電路106及源極驅動電路104。 For the convenience of description, the figure shows the first direction D1 and the second direction D2, and the first direction D1 and the second direction D2 are different, for example, the first direction D1 and the second direction D2 are respectively the 1A and 1B The horizontal and vertical directions of the figure are orthogonal to each other. The active area AA has a first pixel area P1 and a second pixel area P2 located on two opposite sides of the first pixel area P1. The first pixel area P1 is closer to the center of the array substrate 100 than the second pixel area P2 C. In other words, the substrate 102 defines a center line CL, the center line CL passes through the center C of the array substrate 100, the gate driving circuit 106, and the source driving circuit 104, the center line CL passes through the first pixel region P1, and the center line CL and the There is a minimum interval S1 between the two-pixel area P2 along the first direction D1. The peripheral area NA also includes a wiring area FR. The wiring area FR is located between the source driving circuit 104 and the first pixel area P1. Fan-out lines (not shown) are provided in the wiring area FR. The first pixel area P1 and the second pixel area P2 are electrically connected to the gate driving circuit 106 and the source driving circuit 104 through a fan-out line.

第1C圖為第1B圖之區域R的放大示意圖,第1D圖為第1C圖沿剖線A-A的剖面示意圖,請同時參照第1B圖、 第1C圖及第1D圖。區域R涵蓋第一畫素區P1及第二畫素區P2。第一畫素區P1包括設置於基板102上的多條資料線DL、多條掃描線SL、多個畫素單元PU、至少一條第一資料訊號傳輸線110、至少一條第二資料訊號傳輸線112、至少一條第一掃描訊號傳輸線114及輔助線116。第二畫素區P2包括設置於基板102上的多條資料線DL、多條掃描線SL、多個畫素單元PU、至少一條第二資料訊號傳輸線112及至少一條第一掃描訊號傳輸線114。也就是說,第一資料訊號傳輸線110及輔助線116不位於第二畫素區P2。各畫素單元PU電性連接資料線DL及掃描線SL。畫素單元PU沿著第一方向D1與第二方向D2呈陣列排列,並且每一畫素單元PU包括彼此電性連接的多個薄膜電晶體T及多個畫素電極PE。此外,畫素單元PU可包括一或多個電容器(未繪),且電容器可電性連接於薄膜電晶體T及/或畫素電極PE。 Figure 1C is an enlarged schematic view of area R in Figure 1B, Figure 1D is a schematic cross-sectional view of Figure 1C along the section line A-A, please refer to Figure 1B, Figure 1C and Figure 1D. The area R covers the first pixel area P1 and the second pixel area P2. The first pixel area P1 includes a plurality of data lines DL, a plurality of scan lines SL, a plurality of pixel units PU, at least one first data signal transmission line 110, at least one second data signal transmission line 112, At least one first scan signal transmission line 114 and auxiliary line 116. The second pixel area P2 includes a plurality of data lines DL, a plurality of scan lines SL, a plurality of pixel units PU, at least one second data signal transmission line 112, and at least one first scan signal transmission line 114 disposed on the substrate 102. In other words, the first data signal transmission line 110 and the auxiliary line 116 are not located in the second pixel area P2. Each pixel unit PU is electrically connected to the data line DL and the scan line SL. The pixel units PU are arranged in an array along the first direction D1 and the second direction D2, and each pixel unit PU includes a plurality of thin film transistors T and a plurality of pixel electrodes PE electrically connected to each other. In addition, the pixel unit PU may include one or more capacitors (not shown), and the capacitors may be electrically connected to the thin film transistor T and/or the pixel electrode PE.

資料線DL與掃描線SL相交,於本實施例中,掃描線SL及第二資料訊號傳輸線112沿著第一方向D1延伸,資料線DL、第一資料訊號傳輸線110、輔助線116、第一掃描訊號傳輸線114沿著第二方向D2延伸。掃描線SL及第二資料訊號傳輸線112由位於基板102上的第一圖案化導電層所形成,資料線DL、第一資料訊號傳輸線110、輔助線116及第一掃描訊號傳輸線114由位於基板102上的第二圖案化導電層所形成,其中第一圖案化導電層與第二圖案化導電層位於不同膜層。第一圖案化導電層與第二圖案化導電層之間具有絕緣層IN。 The data line DL intersects the scan line SL. In this embodiment, the scan line SL and the second data signal transmission line 112 extend along the first direction D1, the data line DL, the first data signal transmission line 110, the auxiliary line 116, and the first The scan signal transmission line 114 extends along the second direction D2. The scan line SL and the second data signal transmission line 112 are formed by the first patterned conductive layer on the substrate 102. The data line DL, the first data signal transmission line 110, the auxiliary line 116, and the first scan signal transmission line 114 are formed on the substrate 102. The second patterned conductive layer above is formed, wherein the first patterned conductive layer and the second patterned conductive layer are located in different layers. There is an insulating layer IN between the first patterned conductive layer and the second patterned conductive layer.

第一資料訊號傳輸線110相交於掃描線SL及第二 資料訊號傳輸線112,第一資料訊號傳輸線110透過第一資料通孔DTH1電性連接於第二資料訊號傳輸線112。第二資料訊號傳輸線112透過第二資料通孔DTH2電性連接於資料線DL。如此一來,即使位於第二畫素區P2的資料線DL被預切割線108’、108”截斷,來自源極驅動電路104的資料訊號仍可依序經由第一資料訊號傳輸線110、第二資料訊號傳輸線112及資料線DL傳遞資料訊號給第二畫素區P2的畫素單元PU,藉此達到可任意切割非矩形的陣列基板100以獲得不同非矩形尺寸的陣列基板100的優點,也就是說,可任意切割圓形尺寸的陣列基板100,以獲得具有縮小的圓形尺寸的陣列基板100的優點。於本實施例中,位於第二畫素區P2的每一資料線DL搭配一條第一資料訊號傳輸線110及一條第二資料訊號傳輸線112,也就是說,第一資料訊號傳輸線110之數量與第二資料訊號傳輸線112之數量相同,以達到傳遞資料訊號的效果。 The first data signal transmission line 110 intersects the scan line SL and the second The data signal transmission line 112. The first data signal transmission line 110 is electrically connected to the second data signal transmission line 112 through the first data via DTH1. The second data signal transmission line 112 is electrically connected to the data line DL through the second data through hole DTH2. In this way, even if the data line DL located in the second pixel area P2 is cut off by the pre-cut lines 108', 108", the data signal from the source driving circuit 104 can still pass through the first data signal transmission line 110, the second The data signal transmission line 112 and the data line DL transfer the data signal to the pixel unit PU of the second pixel area P2, thereby achieving the advantage that the non-rectangular array substrate 100 can be arbitrarily cut to obtain the array substrate 100 of different non-rectangular sizes. That is, the array substrate 100 of circular size can be arbitrarily cut to obtain the advantages of the array substrate 100 having a reduced circular size. In this embodiment, each data line DL located in the second pixel area P2 is matched with one The first data signal transmission line 110 and the second data signal transmission line 112, that is, the number of the first data signal transmission line 110 is the same as the number of the second data signal transmission line 112, so as to achieve the effect of transmitting the data signal.

相鄰兩條資料線DL傳輸的資料訊號彼此電位極性不同,意即當地2M+1條資料線DL(奇數條資料線DL)傳輸的資料訊號為正電位,第2M條資料線DL(偶數條資料線DL)傳輸的資料訊號則是負電位,反之亦然,其中M為正整數。輔助線116及其中一條相鄰的資料線DL(例如輔助線116右側的資料線DL)之間具有第一資料訊號傳輸線110,輔助線116及另一條相鄰的資料線DL(例如輔助線116左側的資料線DL)之間具有畫素單元PU,於本實施例中,輔助線116電性連接此相鄰的資料線DL(即輔助線116左側的資料線DL),換言之,輔助線116的電位與此相鄰的資料線DL的電位彼此極性相同。如此一 來,可避免第一資料訊號傳輸線110之間的電容耦合效應(Couple Effect)干擾資料線DL,以固定資料線DL的電位差值,使畫素單元PU呈現所需求的灰階。 The data signals transmitted by two adjacent data lines DL have different potential polarities, which means that the data signals transmitted by the local 2M+1 data lines DL (odd-numbered data lines DL) have positive potentials, and the 2M-th data line DL (even-numbered data lines) The data signal transmitted by the data line DL) is negative, and vice versa, where M is a positive integer. Between the auxiliary line 116 and one of the adjacent data lines DL (for example, the data line DL on the right side of the auxiliary line 116), there is a first data signal transmission line 110, the auxiliary line 116 and another adjacent data line DL (for example, the auxiliary line 116). There is a pixel unit PU between the data lines DL on the left. In this embodiment, the auxiliary line 116 is electrically connected to the adjacent data line DL (that is, the data line DL on the left side of the auxiliary line 116), in other words, the auxiliary line 116 The potential of and the potential of the adjacent data line DL have the same polarity. So one In this way, the capacitive coupling effect (Couple Effect) between the first data signal transmission lines 110 can be avoided to interfere with the data line DL, and the potential difference of the data line DL is fixed, so that the pixel unit PU presents the required gray scale.

為了說明,第1E圖繪示第1C圖之掃描線SL及第一掃描訊號傳輸線114在陣列基板100的上視示意圖,為求清晰,第1E圖省略繪示其他電路元件(例如資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112及源極驅動電路104)。請同時參照第1E圖及第1C圖。在本實施例中,陣列基板100採用閘極驅動電路106進行單邊單驅的掃描方式。第一掃描訊號傳輸線114與掃描線SL透過第一掃描通孔STH1彼此電性連接。基板102上定義有預切割線108’、108”,如前所述,於此不再贅述。當沿著預切割線108’切割陣列基板100得到陣列基板100’,一部分的第一掃描通孔STH1位於周邊區NA’,且另一部分的第一掃描通孔STH1位於主動區AA’。當沿著預切割線108”切割陣列基板100得到陣列基板100”,一部分的第一掃描通孔STH1位於周邊區NA”,且另一部分的第一掃描通孔STH1位於主動區AA”。透過設置第一掃描訊號傳輸線114,即使預切割線108’、108”切斷掃描線SL,閘極驅動電路106的閘極訊號仍可依序經由第一掃描訊號傳輸線114及掃描線SL來傳遞給對應的畫素單元PU。 For illustration, FIG. 1E shows a schematic top view of the scan line SL and the first scan signal transmission line 114 of FIG. 1C on the array substrate 100. For clarity, FIG. 1E omits the depiction of other circuit elements (such as data lines DL, The first data signal transmission line 110, the second data signal transmission line 112 and the source drive circuit 104). Please refer to Figure 1E and Figure 1C at the same time. In this embodiment, the array substrate 100 adopts the gate driving circuit 106 to perform a single-side single-drive scanning method. The first scan signal transmission line 114 and the scan line SL are electrically connected to each other through the first scan through hole STH1. Pre-cut lines 108' and 108" are defined on the substrate 102, as described above, and will not be repeated here. When the array substrate 100 is cut along the pre-cut line 108' to obtain the array substrate 100', a part of the first scanning through holes STH1 is located in the peripheral area NA', and another part of the first scanning through hole STH1 is located in the active area AA'. When the array substrate 100 is cut along the pre-cut line 108" to obtain the array substrate 100", a part of the first scanning through hole STH1 is located The peripheral area NA", and the other part of the first scan through hole STH1 is located in the active area AA". By arranging the first scan signal transmission line 114, even if the pre-cut lines 108', 108" cut the scan line SL, the gate driving circuit 106 The gate signal of φ can still be sequentially transmitted to the corresponding pixel unit PU via the first scan signal transmission line 114 and the scan line SL.

第2A圖及第2B圖為依據本揭露另一實施例的陣列基板100a的上視示意圖。第2A、2B圖與第1E圖之差異在於第2A圖及第2B圖的閘極驅動電路106是雙閘極驅動電路,陣列基板100a採用雙邊雙驅的掃描方式,走線區FR位於陣列基板 100a之上側的周邊區NA及下側的周邊區NA。如此一來,預切割線108’、108”的位置可以靠近上側的閘極驅動電路106或是靠近下側的閘極驅動電路106,如此一來,可達到非矩形的陣列基板100a之非矩形切割尺寸彈性化的優點,也就是說,可任意切割圓形的陣列基板100a,以獲得具有不同的圓形尺寸的陣列基板100a的優點。 2A and 2B are schematic top views of an array substrate 100a according to another embodiment of the disclosure. The difference between Figures 2A and 2B and Figure 1E is that the gate drive circuit 106 in Figures 2A and 2B is a double gate drive circuit. The array substrate 100a adopts a double-sided double drive scanning method, and the wiring area FR is located on the array substrate. The peripheral area NA on the upper side and the peripheral area NA on the lower side of 100a. In this way, the position of the pre-cut lines 108', 108" can be close to the gate driving circuit 106 on the upper side or the gate driving circuit 106 on the lower side. In this way, the non-rectangular shape of the non-rectangular array substrate 100a can be achieved. The advantage of cutting size flexibility, that is, the circular array substrate 100a can be arbitrarily cut to obtain the advantages of the array substrate 100a having different circular sizes.

第3圖為依據本揭露另一實施例的陣列基板100b的上視示意圖。請參照第3圖,陣列基板100b為使用三閘極(tri gate)架構驅動之陣列基板100b,其畫素單元PU排列方式為同一條資料線DL電性連接之主動元件(例如薄膜電晶體T)是沿著行方向(即第二方向D2)於資料線DL的兩側交替排列,源極驅動電路104(未繪示)以行反轉的方式來驅動陣列基板100b,在此架構下,掃描線SL的數量增加,資料線DL的數量減少,源極驅動電路104的數量也減少,可降低功耗及節省成本,其中第一資料訊號傳輸線110之數量為第二資料訊號傳輸線112之數量的三倍。陣列基板100b還包括橋接線120,橋接線120沿著第一方向D1延伸,並且,橋接線120相交於第一掃描訊號傳輸線114。於本實施例中,橋接線120與掃描線SL為同一膜層。橋接線120透過橋接通孔BTH電性連接資料線DL,使得源極驅動電路104(未繪示)的資料訊號經由資料線DL及橋接線120傳遞給部分的畫素單元PU,以達到傳遞資料訊號的效果。 FIG. 3 is a schematic top view of an array substrate 100b according to another embodiment of the disclosure. Please refer to FIG. 3, the array substrate 100b is an array substrate 100b driven by a tri gate structure. The pixel unit PU is arranged in an active element (such as a thin film transistor T) electrically connected to the same data line DL. ) Is arranged alternately on both sides of the data line DL along the row direction (ie, the second direction D2). The source driving circuit 104 (not shown) drives the array substrate 100b in a row inversion manner. Under this structure, The number of scan lines SL increases, the number of data lines DL decreases, and the number of source driver circuits 104 also decreases, which can reduce power consumption and save costs. The number of first data signal transmission lines 110 is the number of second data signal transmission lines 112 Tripled. The array substrate 100b further includes a bridge line 120 extending along the first direction D1, and the bridge line 120 intersects the first scan signal transmission line 114. In this embodiment, the bridge line 120 and the scan line SL are the same film layer. The bridge line 120 is electrically connected to the data line DL through the bridge via hole BTH, so that the data signal of the source driving circuit 104 (not shown) is transmitted to some pixel units PU through the data line DL and the bridge line 120 to achieve the transmission The effect of the data signal.

第4A圖及第4B圖為依據本揭露另一實施例的陣列基板100c的上視示意圖。第4A圖、第4B圖與第1A圖至第1E圖之差異在於陣列基板100c還包括第二掃描訊號傳輸線118, 基板102定義有第一基準線BL1及第二基準線BL2。於本實施例中,第一基準線BL1實質上平行於第二方向D2,第二基準線BL2實質上平行於第一方向D1,且第二基準線BL2實質上垂直於第一基準線BL1。第一基準線BL1與中心線CL之夾角α在約42度至約48度的範圍中,第二基準線BL2與中心線CL之間的夾角β在約42度至約48度的範圍中。 4A and 4B are schematic top views of an array substrate 100c according to another embodiment of the disclosure. The difference between FIGS. 4A and 4B and FIGS. 1A to 1E is that the array substrate 100c further includes a second scan signal transmission line 118. The substrate 102 defines a first reference line BL1 and a second reference line BL2. In this embodiment, the first reference line BL1 is substantially parallel to the second direction D2, the second reference line BL2 is substantially parallel to the first direction D1, and the second reference line BL2 is substantially perpendicular to the first reference line BL1. The included angle α between the first reference line BL1 and the center line CL is in the range of about 42 degrees to about 48 degrees, and the included angle β between the second reference line BL2 and the center line CL is in the range of about 42 degrees to about 48 degrees.

陣列基板100c之第一畫素區P1的位置在第一基準線BL1之右側,第二畫素區P2的位置在第一基準線BL1之左側。為求清晰,第4A圖繪示陣列基板100c的資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112及源極驅動電路104。第4B圖繪示陣列基板100c的掃描線SL、第一掃描訊號傳輸線114、第二掃描訊號傳輸線118及閘極驅動電路106。請先參照第4A圖,第一基準線BL1及第二基準線BL2將陣列基板100c區隔為第一子區域SR1、第二子區域SR2、第三子區域SR3及第四子區域SR4,源極驅動電路104設置於陣列基板100c的第一子區域SR1的一側。源極驅動電路104包括第一組104a及第二組104b,第一組104a比第二組104b更靠近第一基準線BL1。源極驅動電路104的第一組104a的資料訊號依序經由第一資料訊號傳輸線110(例如朝方向200)、第二資料訊號傳輸線112(例如朝方向202)及資料線DL(例如朝方向204)傳遞給第一畫素區P1的畫素單元PU,如第1C圖所述,於此不再重複贅述。源極驅動電路104的第二組104b的資料訊號依序經由第二資料訊號傳輸線112(例如朝方向300)及資料線DL(例如朝方向302)傳遞給第二畫素區P2的畫素單元PU。換言之源極驅動 電路104的第一組104a控制第一畫素區P1的畫素單元PU,源極驅動電路104的第二組104b控制第二畫素區P2的畫素單元PU。藉此達到可任意切割非矩形的陣列基板100c以獲得不同非矩形尺寸的陣列基板100c的優點,也就是說,可任意切割圓形的陣列基板100c,以獲得具有不同的圓形尺寸的陣列基板100c的優點。 The position of the first pixel area P1 of the array substrate 100c is on the right side of the first reference line BL1, and the position of the second pixel area P2 is on the left side of the first reference line BL1. For clarity, FIG. 4A shows the data line DL, the first data signal transmission line 110, the second data signal transmission line 112, and the source driving circuit 104 of the array substrate 100c. FIG. 4B shows the scan line SL, the first scan signal transmission line 114, the second scan signal transmission line 118, and the gate driving circuit 106 of the array substrate 100c. Please refer to FIG. 4A first, the first reference line BL1 and the second reference line BL2 partition the array substrate 100c into a first sub-region SR1, a second sub-region SR2, a third sub-region SR3, and a fourth sub-region SR4. The pole driving circuit 104 is disposed on one side of the first sub-region SR1 of the array substrate 100c. The source driving circuit 104 includes a first group 104a and a second group 104b. The first group 104a is closer to the first reference line BL1 than the second group 104b. The data signals of the first group 104a of the source driving circuit 104 sequentially pass through the first data signal transmission line 110 (for example, toward the direction 200), the second data signal transmission line 112 (for example, toward the direction 202), and the data line DL (for example, toward the direction 204). ) The pixel unit PU transferred to the first pixel area P1 is as described in FIG. 1C, and will not be repeated here. The data signals of the second group 104b of the source driving circuit 104 are sequentially transmitted to the pixel units of the second pixel region P2 via the second data signal transmission line 112 (for example, toward the direction 300) and the data line DL (for example, toward the direction 302) PU. In other words source drive The first group 104a of the circuit 104 controls the pixel unit PU of the first pixel area P1, and the second group 104b of the source driving circuit 104 controls the pixel unit PU of the second pixel area P2. This achieves the advantage that the non-rectangular array substrate 100c can be arbitrarily cut to obtain array substrates 100c with different non-rectangular sizes, that is, the circular array substrate 100c can be arbitrarily cut to obtain array substrates with different circular sizes. The advantages of 100c.

接著請參照第4B圖。閘極驅動電路106設置於陣列基板100c之第一子區域SR1的一側。陣列基板100c還可區分為第三畫素區P3及第四畫素區P4。第三畫素區P3的位置在第二基準線BL2之上側,第四畫素區P4的位置在第二基準線BL2之下側。閘極驅動電路106包括第一組106a及第二組106b。第一組106a比第二組106b更靠近第二基準線BL2。於本實施例中,第二掃描訊號傳輸線118沿著第一方向D1延伸,換言之,第二掃描訊號傳輸線118實質上平行於掃描線SL,且第二掃描訊號傳輸線118與第一掃描訊號傳輸線114相交,其中第二掃描訊號傳輸線118與第一掃描訊號傳輸線114透過第二掃描通孔STH2電性連接。閘極驅動電路106的第一組106a的掃描訊號依序經由第二掃描訊號傳輸線118(例如朝方向400)、第一掃描訊號傳輸線114(例如朝方向402)及掃描線SL(例如朝方向404)傳遞給第三畫素區P3的畫素單元PU。閘極驅動電路106的第二組106b的掃描訊號依序經由第一掃描訊號傳輸線114(例如朝方向600)及掃描線SL(例如朝方向602)傳遞給第四畫素區P4的畫素單元PU,如第1E圖所述,於此不再重複贅述。換言之,閘極驅動電路106的第一組106a控制第三畫素區P3的畫素單 元PU,閘極驅動電路106的第二組106b控制第四畫素區P4的畫素單元PU,藉此達到傳遞掃描訊號的效果及陣列基板100c之非矩形切割尺寸彈性化的優點。也就是說,藉此達到可任意切割非矩形的陣列基板100c以獲得具有不同非矩形尺寸的陣列基板100c的優點,於本實施例中,可任意切割圓形的陣列基板100c,以獲得不同的圓形尺寸的陣列基板100c的優點。 Then please refer to Figure 4B. The gate driving circuit 106 is disposed on one side of the first sub-region SR1 of the array substrate 100c. The array substrate 100c can also be divided into a third pixel area P3 and a fourth pixel area P4. The position of the third pixel area P3 is above the second reference line BL2, and the position of the fourth pixel area P4 is below the second reference line BL2. The gate driving circuit 106 includes a first group 106a and a second group 106b. The first group 106a is closer to the second reference line BL2 than the second group 106b. In this embodiment, the second scan signal transmission line 118 extends along the first direction D1. In other words, the second scan signal transmission line 118 is substantially parallel to the scan line SL, and the second scan signal transmission line 118 and the first scan signal transmission line 114 Intersect, where the second scan signal transmission line 118 and the first scan signal transmission line 114 are electrically connected through the second scan through hole STH2. The scan signals of the first group 106a of the gate driving circuit 106 sequentially pass through the second scan signal transmission line 118 (for example, toward the direction 400), the first scan signal transmission line 114 (for example, toward the direction 402), and the scan line SL (for example, toward the direction 404). ) Is transferred to the pixel unit PU of the third pixel area P3. The scan signals of the second group 106b of the gate driving circuit 106 are sequentially transmitted to the pixel units of the fourth pixel region P4 via the first scan signal transmission line 114 (for example, toward the direction 600) and the scan line SL (for example, toward the direction 602) PU, as described in Figure 1E, will not be repeated here. In other words, the first group 106a of the gate driving circuit 106 controls the pixel unit of the third pixel region P3. The second group 106b of the gate driving circuit 106 controls the pixel unit PU of the fourth pixel area P4, thereby achieving the effect of transmitting the scanning signal and the advantage of flexible non-rectangular cutting size of the array substrate 100c. That is, to achieve the advantage that the non-rectangular array substrate 100c can be arbitrarily cut to obtain array substrates 100c with different non-rectangular sizes. In this embodiment, the circular array substrate 100c can be arbitrarily cut to obtain different The advantages of the circular-sized array substrate 100c.

第5圖為依據本揭露另一實施例的陣列基板100d的上視示意圖。請參照第5圖,陣列基板100d包括畫素單元PU、第一掃描線SL1、第二掃描線SL2、資料線DL、第一資料訊號傳輸線110、第二資料訊號傳輸線112、第一掃描訊號傳輸線114及橋接線120。第一掃描訊號傳輸線114位於第一資料訊號傳輸線110之相對二側。畫素單元PU包括第一子畫素PU1與第二子畫素PU2。第一子畫素PU1包括第一掃描線SL1、資料線DL、第一薄膜電晶體T1、第一畫素電極PE1。第二子畫素PU2包括第二掃描線SL2、資料線DL、第二薄膜電晶體T2及第二畫素電極PE2。根據本實施例,第一子畫素PU1及第二子畫素PU2共用同一條資料線DL(未繪示),以形成半源極驅動(half source driving,HSD)畫素架構。橋接線120沿著第一方向D1延伸,並且,橋接線120相交於第一資料訊號傳輸線110及第一掃描訊號傳輸線114。於本實施例中,橋接線120與掃描線SL為同一膜層。橋接線120透過橋接通孔BTH電性連接第一資料訊號傳輸線110,使得源極驅動電路104(未繪示)的資料訊號依序經由第一資料訊號傳輸線110及橋接線120傳遞給畫素單元PU的第一子畫素PU1及第二子畫素PU2,以達到傳遞資料 訊號的效果。如此一來,達到可任意切割非矩形的陣列基板100d以獲得不同非矩形尺寸的陣列基板100d的優點,也就是說,可任意切割圓形的陣列基板100d,以獲得不同的圓形尺寸的陣列基板100d的優點。 FIG. 5 is a schematic top view of an array substrate 100d according to another embodiment of the disclosure. Referring to FIG. 5, the array substrate 100d includes a pixel unit PU, a first scan line SL1, a second scan line SL2, a data line DL, a first data signal transmission line 110, a second data signal transmission line 112, and a first scan signal transmission line 114 and bridge line 120. The first scan signal transmission line 114 is located on two opposite sides of the first data signal transmission line 110. The pixel unit PU includes a first sub-pixel PU1 and a second sub-pixel PU2. The first sub-pixel PU1 includes a first scan line SL1, a data line DL, a first thin film transistor T1, and a first pixel electrode PE1. The second sub-pixel PU2 includes a second scan line SL2, a data line DL, a second thin film transistor T2, and a second pixel electrode PE2. According to this embodiment, the first sub-pixel PU1 and the second sub-pixel PU2 share the same data line DL (not shown) to form a half source driving (HSD) pixel structure. The bridge line 120 extends along the first direction D1, and the bridge line 120 intersects the first data signal transmission line 110 and the first scan signal transmission line 114. In this embodiment, the bridge line 120 and the scan line SL are the same film layer. The bridge line 120 is electrically connected to the first data signal transmission line 110 through the bridge through hole BTH, so that the data signal of the source driving circuit 104 (not shown) is sequentially transmitted to the pixel via the first data signal transmission line 110 and the bridge line 120 The first sub-pixel PU1 and the second sub-pixel PU2 of the unit PU to transmit data The effect of the signal. In this way, the advantage that the non-rectangular array substrate 100d can be arbitrarily cut to obtain array substrates 100d of different non-rectangular sizes is achieved, that is, the circular array substrate 100d can be arbitrarily cut to obtain arrays of different circular sizes. Advantages of the substrate 100d.

綜上所述,本揭露的實施例的陣列基板,藉由設置第一資料訊號傳輸線及第二資料訊號傳輸線,達到傳遞資料訊號的效果及非矩形陣列基板之非矩形切割尺寸彈性化的優點。並且,藉由設置掃描訊號傳輸線,達到藉此達到傳遞掃描訊號的效果及非矩形陣列基板之非矩形切割尺寸彈性化的優點。 In summary, the array substrate of the embodiment of the present disclosure has the first data signal transmission line and the second data signal transmission line to achieve the effect of transmitting data signals and the advantage of flexibility in the non-rectangular cutting size of the non-rectangular array substrate. In addition, by providing the scanning signal transmission line, the effect of transmitting the scanning signal and the flexibility of the non-rectangular cutting size of the non-rectangular array substrate are achieved.

以上概述數個實施方式或實施例的特徵,使所屬領域中具有通常知識者可以從各個方面更加瞭解本揭露。本技術領域中具有通常知識者應可理解,且可輕易地以本揭露為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/或達到在此介紹的實施方式或實施例相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本揭露的揭露精神與範圍。在不背離本揭露的精神與範圍之前提下,可對本揭露進行各種改變、置換或修改。 The above summarizes the characteristics of several implementations or embodiments, so that those with ordinary knowledge in the field can better understand the present disclosure from various aspects. Those skilled in the art should understand, and can easily design or modify other processes and structures based on this disclosure, so as to achieve the same purpose and/or to achieve the implementation modes or embodiments introduced herein The same advantages. Those skilled in the art should also understand that these equivalent structures do not deviate from the spirit and scope of the disclosure. Without departing from the spirit and scope of this disclosure, various changes, substitutions or modifications can be made to this disclosure.

110‧‧‧第一資料訊號傳輸線 110‧‧‧First data signal transmission line

112‧‧‧第二資料訊號傳輸線 112‧‧‧Second data signal transmission line

114‧‧‧第一掃描訊號傳輸線 114‧‧‧First scan signal transmission line

116‧‧‧輔助線 116‧‧‧Auxiliary Line

A-A‧‧‧剖線 Section A-A‧‧‧

D1‧‧‧第一方向 D1‧‧‧First direction

D2‧‧‧第二方向 D2‧‧‧Second direction

DL‧‧‧資料線 DL‧‧‧Data line

DTH1‧‧‧第一資料通孔 DTH1‧‧‧First data through hole

DTH2‧‧‧第二資料通孔 DTH2‧‧‧Second data through hole

P1‧‧‧第一畫素區 P1‧‧‧The first pixel area

P2‧‧‧第二畫素區 P2‧‧‧Second pixel area

PE‧‧‧畫素電極 PE‧‧‧Pixel electrode

PU‧‧‧畫素單元 PU‧‧‧Pixel unit

R‧‧‧區域 R‧‧‧Region

SL‧‧‧掃描線 SL‧‧‧Scan line

STH1‧‧‧第一掃描通孔 STH1‧‧‧First scan through hole

T‧‧‧薄膜電晶體 T‧‧‧Thin Film Transistor

Claims (10)

一種陣列基板,包含:一基板;多條資料線,設置於該基板上;多條掃描線,設置於該基板上且與該些資料線相交;多個畫素單元,設置於該基板上,且各該畫素單元與該些資料線及該些掃描線電性連接;至少一條第一資料訊號傳輸線,設置於該基板上且與該些掃描線相交;以及至少一條第二資料訊號傳輸線,設置於該基板上且與該些資料線相交,其中該第一資料訊號傳輸線透過一第一資料通孔電性連接該第二資料訊號傳輸線,該第二資料訊號傳輸線透過一第二資料通孔電性連接該資料線。 An array substrate includes: a substrate; a plurality of data lines arranged on the substrate; a plurality of scanning lines arranged on the substrate and intersecting the data lines; a plurality of pixel units arranged on the substrate, And each pixel unit is electrically connected to the data lines and the scan lines; at least one first data signal transmission line is disposed on the substrate and intersects the scan lines; and at least one second data signal transmission line, Is disposed on the substrate and intersects the data lines, wherein the first data signal transmission line is electrically connected to the second data signal transmission line through a first data through hole, and the second data signal transmission line is through a second data through hole Electrically connect the data line. 如請求項1所述之陣列基板,其中該些第一資料訊號傳輸線之數量與該些第二資料訊號傳輸線之數量相同。 The array substrate according to claim 1, wherein the number of the first data signal transmission lines is the same as the number of the second data signal transmission lines. 如請求項1所述之陣列基板,其中該些第一資料訊號傳輸線之數量為該些第二資料訊號傳輸線之數量的三倍。 The array substrate according to claim 1, wherein the number of the first data signal transmission lines is three times the number of the second data signal transmission lines. 如請求項1所述之陣列基板,更包含:一輔助線,設置於該基板上且實質上平行於該些資料線,其中該輔助線與相鄰的該資料線電性連接。 The array substrate according to claim 1, further comprising: an auxiliary line disposed on the substrate and substantially parallel to the data lines, wherein the auxiliary line is electrically connected to the adjacent data line. 一種陣列基板,包含:一基板,具有一主動區及環繞該主動區之一周邊區;多條資料線,設置於該基板上;多條掃描線,設置於該基板上且與該些資料線相交;多個畫素單元,設置於該基板上,且各該畫素單元與該些資料線及該些掃描線電性連接;以及至少一條掃描訊號傳輸線,設置於該基板上且與該些掃描線相交,其中該掃描訊號傳輸線透過一掃描通孔電性連接該掃描線,且該掃描通孔位於該周邊區。 An array substrate, comprising: a substrate having an active area and a peripheral area surrounding the active area; a plurality of data lines arranged on the substrate; a plurality of scanning lines arranged on the substrate and intersecting the data lines A plurality of pixel units are arranged on the substrate, and each of the pixel units is electrically connected to the data lines and the scan lines; and at least one scan signal transmission line is arranged on the substrate and is connected to the scan lines The lines intersect, wherein the scan signal transmission line is electrically connected to the scan line through a scan through hole, and the scan through hole is located in the peripheral area. 如請求項5所述之陣列基板,更包含:一閘極驅動電路,設置於該周邊區之一側且與該些掃描線電性連接;以及一源極驅動電路,設置於該周邊區之該側且與該些資料線電性連接。 The array substrate according to claim 5, further comprising: a gate driving circuit arranged on one side of the peripheral area and electrically connected to the scan lines; and a source driving circuit arranged on the peripheral area The side is electrically connected to the data lines. 一種陣列基板,包含:一基板,具有一主動區與環繞該主動區之一周邊區,其中該主動區具有一第一畫素區與位於該第一畫素區之相對二側的一第二畫素區,該基板定義有通過該基板之中心之一中心線,該中心線通過該第一畫素區,且該中心線與該第二畫素區之間沿著一第一方向具有一間隔;多條資料線,設置於該基板上,且沿著一第二方向延伸,其中該第二方向與該第一方向相交; 多條掃描線,設置於該基板上,且沿著該第一方向延伸;多個畫素單元,設置於該基板上,且各該畫素單元與該些資料線及該些掃描線電性連接;至少一條第一資料訊號傳輸線,配置於該第一畫素區,且沿著該第二方向延伸,其中該第一資料訊號傳輸線不位於該第二畫素區;以及至少一條第二資料訊號傳輸線,設置於該基板上且與該些資料線相交,其中該第一資料訊號傳輸線透過一第一資料通孔電性連接該第二資料訊號傳輸線,該第二資料訊號傳輸線透過一第二資料通孔電性連接該資料線。 An array substrate comprising: a substrate having an active area and a peripheral area surrounding the active area, wherein the active area has a first pixel area and a second picture located on two opposite sides of the first pixel area A pixel area, the substrate is defined with a center line passing through the center of the substrate, the center line passes through the first pixel area, and there is a gap between the center line and the second pixel area along a first direction ; A plurality of data lines are arranged on the substrate and extend along a second direction, wherein the second direction intersects the first direction; A plurality of scan lines are arranged on the substrate and extend along the first direction; a plurality of pixel units are arranged on the substrate, and each pixel unit is electrically connected to the data lines and the scan lines Connection; at least one first data signal transmission line arranged in the first pixel area and extending along the second direction, wherein the first data signal transmission line is not located in the second pixel area; and at least one second data The signal transmission line is arranged on the substrate and intersects the data lines, wherein the first data signal transmission line is electrically connected to the second data signal transmission line through a first data through hole, and the second data signal transmission line passes through a second data signal transmission line. The data via is electrically connected to the data line. 一種陣列基板,包含:一基板,該基板定義有沿著一第一方向延伸之一第一基準線及沿著一第二方向延伸之一第二基準線,其中該第一方向實質上垂直於該第二方向,該第一基準線及該第二基準線將該基板區隔為一第一子區域、一第二子區域、一第三子區域及一第四子區域;多條資料線,設置於該基板上且實質上平行於該第二方向;多條掃描線,設置於該基板上且實質上平行於該第一方向;多個畫素單元,設置於該基板上,且各該畫素單元與該些資料線及該些掃描線電性連接;至少一條第一掃描訊號傳輸線,設置於該基板上且實質上平行於該第二方向,其中該第一掃描訊號傳輸線與該掃描 線透過一第一掃描通孔電性連接;以及至少一條第二掃描訊號傳輸線,設置於該基板上且實質上平行於該第一方向,其中該第二掃描訊號傳輸線與該第一掃描訊號傳輸線透過一第二掃描通孔電性連接。 An array substrate comprising: a substrate defining a first reference line extending along a first direction and a second reference line extending along a second direction, wherein the first direction is substantially perpendicular to The second direction, the first reference line and the second reference line partition the substrate into a first sub-area, a second sub-area, a third sub-area, and a fourth sub-area; multiple data lines , Arranged on the substrate and substantially parallel to the second direction; a plurality of scan lines arranged on the substrate and substantially parallel to the first direction; a plurality of pixel units arranged on the substrate, and each The pixel unit is electrically connected to the data lines and the scan lines; at least one first scan signal transmission line is disposed on the substrate and is substantially parallel to the second direction, wherein the first scan signal transmission line is scanning The line is electrically connected through a first scanning through hole; and at least one second scanning signal transmission line is disposed on the substrate and substantially parallel to the first direction, wherein the second scanning signal transmission line and the first scanning signal transmission line It is electrically connected through a second scanning through hole. 如請求項8所述之陣列基板,更包含:一源極驅動電路,設置於該基板的該第一子區域的一側;至少一條第一資料訊號傳輸線,至少設置於該基板的該第一子區域且實質上平行於該第二方向;以及至少一條第二資料訊號傳輸線,至少設置於該基板的該第一子區域且實質上平行於該第二方向,該第一資料訊號線透過一第一資料通孔與該第二資料訊號傳輸線電性連接,該第二資料訊號傳輸線透過一第二資料通孔與該資料線電性連接。 The array substrate according to claim 8, further comprising: a source drive circuit arranged on one side of the first sub-region of the substrate; at least one first data signal transmission line arranged on at least the first sub-area of the substrate Sub-region and substantially parallel to the second direction; and at least one second data signal transmission line is provided at least in the first sub-region of the substrate and substantially parallel to the second direction, and the first data signal line passes through a The first data through hole is electrically connected with the second data signal transmission line, and the second data signal transmission line is electrically connected with the data line through a second data through hole. 如請求項9所述之陣列基板,更包含:一閘極驅動電路,設置於該基板的該第一子區域的該側且與該些掃描線電性連接。 The array substrate according to claim 9, further comprising: a gate driving circuit disposed on the side of the first sub-region of the substrate and electrically connected to the scan lines.
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