TWI705279B - Projection objective lens and exposure system - Google Patents
Projection objective lens and exposure system Download PDFInfo
- Publication number
- TWI705279B TWI705279B TW108140277A TW108140277A TWI705279B TW I705279 B TWI705279 B TW I705279B TW 108140277 A TW108140277 A TW 108140277A TW 108140277 A TW108140277 A TW 108140277A TW I705279 B TWI705279 B TW I705279B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- lens group
- projection objective
- aforementioned
- group
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
本發明揭示一種投影物鏡及曝光系統。前述投影物鏡包含從物平面開始沿光軸依次設置的具有正光焦度的第一透鏡組、具有負光焦度的第二透鏡組、具有正光焦度的第三透鏡組、孔徑光闌、具有正光焦度的第四透鏡組、具有負光焦度的第五透鏡組以及具有正光焦度的第六透鏡組;第一透鏡組及第六透鏡組基於孔徑光闌對稱,第二透鏡組及第五透鏡組基於孔徑光闌對稱,第三透鏡組及第四透鏡組基於孔徑光闌對稱,且滿足以下關係式:-0.7<f1/f2<-0.3,-1.1<f2/f3<-0.6,-1.1<f5/f4<-0.6,-0.7<f6/f5<-0.3,其中,f1、f2、f3、f4、f5以及f6分別是第一透鏡組、第二透鏡組、第三透鏡組、第四透鏡組、第五透鏡組以及第六透鏡組的焦距。本發明實施例提供的技術手段,提升投影物鏡的兼容性,提高曝光系統的模組化水準。 The invention discloses a projection objective lens and an exposure system. The aforementioned projection objective lens includes a first lens group with positive refractive power, a second lens group with negative refractive power, a third lens group with positive refractive power, an aperture stop, and a The fourth lens group with positive refractive power, the fifth lens group with negative refractive power, and the sixth lens group with positive refractive power; the first lens group and the sixth lens group are symmetrical based on the aperture stop, the second lens group and The fifth lens group is based on the symmetry of the aperture stop, the third lens group and the fourth lens group are based on the aperture stop symmetry, and satisfy the following relationship: -0.7<f1/f2<-0.3, -1.1<f2/f3<-0.6 , -1.1<f5/f4<-0.6, -0.7<f6/f5<-0.3, where f1, f2, f3, f4, f5, and f6 are the first lens group, the second lens group, and the third lens group, respectively , The focal lengths of the fourth lens group, the fifth lens group, and the sixth lens group. The technical means provided by the embodiments of the present invention improve the compatibility of the projection objective lens and improve the modularization level of the exposure system.
Description
本發明實施例關於一種投影物鏡光學系統,例如關於一種投影物鏡及曝光系統。 The embodiment of the present invention relates to a projection objective optical system, for example, to a projection objective lens and an exposure system.
光學光刻是一種用光將光罩圖案投影複製的技術,應用光學光刻技術的裝置為曝光系統,借助於投影曝光系統,具有不同光罩圖案的圖形被成像至基底上,如矽片或LCD板,用於製造積體電路、薄膜磁頭、液晶顯示板,或微機電(MEMS)等一系列結構。 Optical lithography is a technology that uses light to project and copy mask patterns. The device using optical lithography technology is an exposure system. With the help of the projection exposure system, patterns with different mask patterns are imaged onto a substrate, such as silicon or LCD panels are used to manufacture a series of structures such as integrated circuits, thin-film magnetic heads, liquid crystal display panels, or micro-electromechanical (MEMS).
曝光系統的光源包含汞燈光源及LED光源,LED光源又分為i線光源及igh三線光源,此外,曝光系統基礎的曝光方式包含步進式及掃描式。其中,汞燈光源及LED光源的光譜寬度不同,i線光源及igh三線光源的波長範圍不同,步進式曝光及掃描式曝光的物方視場尺寸不同,相關技術中的曝光系統通常僅針對某一種光源或曝光方式進行投影物鏡設計,進而使得投影物鏡無法兼容上述三種不同的參數,導致曝光系統的兼容性較差。 The light source of the exposure system includes mercury lamp light source and LED light source. LED light source is divided into i-line light source and igh three-line light source. In addition, the basic exposure methods of the exposure system include stepping and scanning. Among them, the mercury lamp light source and the LED light source have different spectral widths, the i-line light source and the igh three-line light source have different wavelength ranges, and the size of the object field of step exposure and scanning exposure are different. The exposure system in related technologies usually only targets The projection objective is designed for a certain light source or exposure method, which makes the projection objective incompatible with the above three different parameters, resulting in poor compatibility of the exposure system.
本發明提供一種投影物鏡及曝光系統,以提升投影物鏡的兼容性。 The invention provides a projection objective lens and an exposure system to improve the compatibility of the projection objective lens.
第一方面,本發明實施例提供一種投影物鏡,其特徵係其包含從物平面開始沿光軸依次設置的具有正光焦度的第一透鏡組、具有負光焦度的第二透鏡組、具有正光焦度的第三透鏡組、孔徑光闌、具有正光焦度的第四透鏡組、具有負光焦度的第五透鏡組以及具有正光焦度的第六透鏡組;前述第一透鏡組及前述第六透鏡組基於前述孔徑光闌對稱,前述第二透鏡組及前述第五透鏡組基於前述孔徑光闌對稱,前述第三透鏡組及前述第四透鏡組基於前述孔徑光闌對稱; In a first aspect, an embodiment of the present invention provides a projection objective lens, which is characterized by comprising a first lens group with positive refractive power, a second lens group with negative refractive power, and a The third lens group with positive refractive power, the aperture stop, the fourth lens group with positive refractive power, the fifth lens group with negative refractive power, and the sixth lens group with positive refractive power; the aforementioned first lens group and The aforementioned sixth lens group is based on the aforementioned aperture diaphragm symmetry, the aforementioned second lens group and the aforementioned fifth lens group are based on the aforementioned aperture diaphragm symmetry, and the aforementioned third lens group and the aforementioned fourth lens group are based on the aforementioned aperture diaphragm symmetry;
前述第一透鏡組用於校正場分布相關的球差、像散及場曲,前述第二透鏡組用於匹配補償前述第一透鏡組及前述第三透鏡組產生的像差,前述第三透鏡組用於校正色差、常數項球差及像散,前述第四透鏡組用於補償前述第三透鏡組產生的彗差及畸變,前述第五透鏡組用於補償前述第二透鏡組產生的彗差及畸變,前述第六透鏡組用於補償前述第一透鏡組產生的彗差及畸變; The first lens group is used to correct spherical aberration, astigmatism and field curvature related to the field distribution, the second lens group is used to match and compensate the aberrations generated by the first lens group and the third lens group, the third lens The group is used to correct chromatic aberration, constant term spherical aberration and astigmatism. The fourth lens group is used to compensate for the coma and distortion produced by the third lens group. The fifth lens group is used to compensate for the coma produced by the second lens group. Aberration and distortion, the sixth lens group is used to compensate coma and distortion generated by the first lens group;
前述投影物鏡滿足以下關係式: The aforementioned projection objective satisfies the following relationship:
-0.7<f1/f2<-0.3 -0.7<f1/f2<-0.3
-1.1<f2/f3<-0.6 -1.1<f2/f3<-0.6
-1.1<f5/f4<-0.6 -1.1<f5/f4<-0.6
-0.7<f6/f5<-0.3 -0.7<f6/f5<-0.3
其中,f1是第一透鏡組的焦距,f2是第二透鏡組的焦距,f3是第三透鏡組的焦距,f4是第四透鏡組的焦距,f5是第五透鏡組的焦距,f6是第六透鏡組的焦距。 Among them, f1 is the focal length of the first lens group, f2 is the focal length of the second lens group, f3 is the focal length of the third lens group, f4 is the focal length of the fourth lens group, f5 is the focal length of the fifth lens group, and f6 is the focal length of the fifth lens group. The focal length of the six lens group.
第二方面,本發明實施例進一步提供一種曝光系統,其特徵係其包含第一方面所記載之投影物鏡。 In a second aspect, an embodiment of the present invention further provides an exposure system, which is characterized in that it includes the projection objective described in the first aspect.
本發明實施例提供的投影物鏡包含從物平面開始沿光軸依次設置的具有正光焦度的第一透鏡組、具有負光焦度的第二透鏡組、具有正光焦度的第三透鏡組、孔徑光闌、具有正光焦度的第四透鏡組、具有負光焦度的第五透鏡組以及具有正光焦度的第六透鏡組,第一透鏡組及第六透鏡組基於孔徑光闌對稱,第二透鏡組及第五透鏡組基於孔徑光闌對稱,第三透鏡組及第四透鏡組基於孔徑光闌對稱,投影物鏡滿足以下關係式:-0.7<f1/f2<-0.3,-1.1<f2/f3<-0.6,-1.1<f5/f4<-0.6,-0.7<f6/f5<-0.3,其中,f1是第一透鏡組的焦距,f2是第二透鏡組的焦距,f3是第三透鏡組的焦距,f4是第四透鏡組的焦距,f5是第五透鏡組的焦距,f6是第六透鏡組的焦距。具有上述結構的投影物鏡的物方視場的直徑以及適用波長範圍均較大,進而使得投影物鏡能夠兼容步進式曝光及掃描方式曝光,兼容ghi三線波長及i單線波長,兼容汞燈光源及LED光源,顯著的提升投影物鏡的兼容性,提高曝光系統的模組化水準。 The projection objective provided by the embodiment of the present invention includes a first lens group with positive refractive power, a second lens group with negative refractive power, and a third lens group with positive refractive power, which are sequentially arranged from the object plane along the optical axis. An aperture stop, a fourth lens group with positive refractive power, a fifth lens group with negative refractive power, and a sixth lens group with positive refractive power. The first lens group and the sixth lens group are symmetrical based on the aperture stop, The second lens group and the fifth lens group are based on the symmetry of the aperture stop, and the third lens group and the fourth lens group are based on the symmetry of the aperture stop. The projection objective satisfies the following relationship: -0.7<f1/f2<-0.3, -1.1< f2/f3<-0.6, -1.1<f5/f4<-0.6, -0.7<f6/f5<-0.3, where f1 is the focal length of the first lens group, f2 is the focal length of the second lens group, and f3 is the The focal length of the three lens group, f4 is the focal length of the fourth lens group, f5 is the focal length of the fifth lens group, and f6 is the focal length of the sixth lens group. The diameter of the object field of view and the applicable wavelength range of the projection objective lens with the above-mentioned structure are relatively large, so that the projection objective lens can be compatible with step exposure and scanning mode exposure, compatible with ghi three-line wavelength and i single-line wavelength, and compatible with mercury light sources and The LED light source significantly improves the compatibility of the projection objective and improves the modularization level of the exposure system.
1‧‧‧光源組件 1‧‧‧Light source assembly
2‧‧‧石英棒 2‧‧‧Quartz Rod
3‧‧‧中繼組 3‧‧‧Relay Group
4‧‧‧光罩 4‧‧‧Mask
5‧‧‧投影物鏡 5‧‧‧Projection Objective
6‧‧‧矽片 6‧‧‧Silicon
10‧‧‧物平面 10‧‧‧Object plane
30‧‧‧孔徑光闌 30‧‧‧Aperture diaphragm
110‧‧‧第一透鏡組 110‧‧‧First lens group
111‧‧‧第一透鏡 111‧‧‧First lens
112‧‧‧第二透鏡 112‧‧‧Second lens
113‧‧‧第三透鏡 113‧‧‧third lens
114‧‧‧第四透鏡 114‧‧‧Fourth lens
120‧‧‧第二透鏡組 120‧‧‧Second lens group
121‧‧‧第五透鏡 121‧‧‧Fifth lens
122‧‧‧第六透鏡 122‧‧‧Sixth lens
130‧‧‧第三透鏡組 130‧‧‧Third lens group
131‧‧‧第七透鏡 131‧‧‧Seventh lens
132‧‧‧第八透鏡 132‧‧‧Eighth lens
133‧‧‧第九透鏡 133‧‧‧Ninth lens
134‧‧‧第十透鏡 134‧‧‧Tenth lens
140‧‧‧第四透鏡組 140‧‧‧Fourth lens group
150‧‧‧第五透鏡組 150‧‧‧Fifth lens group
160‧‧‧第六透鏡組 160‧‧‧Sixth lens group
以下對描述實施例中所必須用到的圖式做一簡單介紹。顯然, 所介紹的圖式只是本發明所要描述的一部分實施例的圖式,而非全部的圖式,對於所屬技術領域中具有通常知識者,在不付出創造性勞動的前提下,亦可根據此等圖式得到其他的圖式。 The following is a brief introduction to the drawings that must be used in describing the embodiments. Obviously, The diagrams introduced are only the diagrams of a part of the embodiments to be described in the present invention, not all of the diagrams. For those with ordinary knowledge in the technical field, they can also be based on these diagrams without creative work. Formula to get other schemas.
【圖1】是本發明實施例提供的一種投影物鏡的結構示意圖。 [Figure 1] is a schematic structural diagram of a projection objective provided by an embodiment of the present invention.
【圖2】是本發明實施例提供的一種投影物鏡的光線像差圖。 [Fig. 2] is a diagram of aberration of light rays of a projection objective provided by an embodiment of the present invention.
【圖3】是本發明實施例提供的一種投影物鏡的垂軸色差圖。 Fig. 3 is a vertical axis chromatic aberration diagram of a projection objective provided by an embodiment of the present invention.
【圖4】是本發明實施例提供的一種投影物鏡的遠心曲線。 [Figure 4] is a telecentric curve of a projection objective provided by an embodiment of the present invention.
【圖5】是本發明實施例提供的又一種投影物鏡的光線像差圖。 [Fig. 5] is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention.
【圖6】是本發明實施例提供的又一種投影物鏡的垂軸色差圖。 Fig. 6 is a vertical axis chromatic aberration diagram of another projection objective provided by an embodiment of the present invention.
【圖7】是本發明實施例提供的又一種投影物鏡的遠心曲線。 Fig. 7 is a telecentric curve of another projection objective provided by an embodiment of the present invention.
【圖8】是本發明實施例提供的又一種投影物鏡的光線像差圖。 [Fig. 8] is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention.
【圖9】是本發明實施例提供的又一種投影物鏡的垂軸色差圖。 Fig. 9 is a vertical axis chromatic aberration diagram of another projection objective provided by an embodiment of the present invention.
【圖10】是本發明實施例提供的又一種投影物鏡的遠心曲線。 [Figure 10] is a telecentric curve of another projection objective provided by an embodiment of the present invention.
【圖11】是本發明實施例提供的又一種投影物鏡的光線像差圖。 [Fig. 11] is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention.
【圖12】是本發明實施例提供的又一種投影物鏡的垂軸色差圖。 Fig. 12 is a vertical axis chromatic aberration diagram of yet another projection objective provided by an embodiment of the present invention.
【圖13】是本發明實施例提供的又一種投影物鏡的遠心曲線。 [Figure 13] is a telecentric curve of another projection objective provided by an embodiment of the present invention.
【圖14】是本發明實施例提供的一種曝光系統的結構示意圖。 [Figure 14] is a schematic structural diagram of an exposure system provided by an embodiment of the present invention.
以下結合圖式及實施例對本發明作進一步的詳細說明。可以理解的是,此處所描述的具體實施例僅僅用於解釋本發明,而非對本發明 的限定。另外亦須說明的是,為便於描述,圖式中僅示出與本發明相關的部分而非全部內容。在更加詳細地討論例示性實施例之前應當提到的是,一些例示性實施例被描述成作為流程圖描繪的處理或方法。雖然流程圖將各項操作(或步驟)描述成順序的處理,但是其中的許多操作可以被並行地、並發地或者同時實施。此外,各項操作的順序可以被重新安排。當其操作完成時前述處理可以被終止,但是亦可具有未包含在圖式中的附加步驟。前述處理可以對應於方法、函數、規程、子常式、副程式等等。 The present invention will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the present invention, not to explain the present invention. The limit. In addition, it should be noted that, for ease of description, the drawings only show part of the content related to the present invention, but not all of the content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some of the exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowchart describes various operations (or steps) as sequential processing, many of the operations can be implemented in parallel, concurrently, or simultaneously. In addition, the order of various operations can be rearranged. The aforementioned processing can be terminated when its operation is completed, but it can also have additional steps not included in the diagram. The aforementioned processing can correspond to methods, functions, procedures, subroutines, subroutines, and so on.
圖1是本發明實施例提供的一種投影物鏡的結構示意圖。如圖1所示,投影物鏡包含從物平面10開始沿光軸依次設置的具有正光焦度的第一透鏡組110、具有負光焦度的第二透鏡組120、具有正光焦度的第三透鏡組130、孔徑光闌30、具有正光焦度的第四透鏡組140、具有負光焦度的第五透鏡組150以及具有正光焦度的第六透鏡組160,第一透鏡組110及第六透鏡組160基於孔徑光闌30對稱,第二透鏡組120及第五透鏡組150基於孔徑光闌30對稱,第三透鏡組130及第四透鏡組140基於孔徑光闌30對稱。第一透鏡組用於校正場分布相關的球差、像散及場曲,第二透鏡組用於匹配補償第一透鏡組及第三透鏡組產生的像差,第三透鏡組用於校正色差、常數項球差及像散,第四透鏡組用於補償第三透鏡組產生的彗差及畸變,第五透鏡組用於補償第二透鏡組產生的彗差及畸變,第六透鏡組用於補償第一透鏡組產生的彗差及畸變。
Fig. 1 is a schematic structural diagram of a projection objective provided by an embodiment of the present invention. As shown in FIG. 1, the projection objective lens includes a
並且,投影物鏡滿足以下關係式: And, the projection objective satisfies the following relationship:
-0.7<f1/f2<-0.3 -0.7<f1/f2<-0.3
-1.1<f2/f3<-0.6 -1.1<f2/f3<-0.6
-1.1<f5/f4<-0.6 -1.1<f5/f4<-0.6
-0.7<f6/f5<-0.3 -0.7<f6/f5<-0.3
其中,f1是第一透鏡組的焦距,f2是第二透鏡組的焦距,f3是第三透鏡組的焦距,f4是第四透鏡組的焦距,f5是第五透鏡組的焦距,f6是第六透鏡組的焦距。 Among them, f1 is the focal length of the first lens group, f2 is the focal length of the second lens group, f3 is the focal length of the third lens group, f4 is the focal length of the fourth lens group, f5 is the focal length of the fifth lens group, and f6 is the focal length of the fifth lens group. The focal length of the six lens group.
必須說明的是,在本實施例中,投影物鏡關於孔徑光闌30對稱,因此不存在慧差,畸變及倍率色差。繼續參照圖1,孔徑光闌30位於第三透鏡組130及第四透鏡組140的中間位置處。
It must be noted that in this embodiment, the projection objective is symmetrical about the
本實施例提供的投影物鏡包含從物平面10開始沿光軸依次設置的具有正光焦度的第一透鏡組110、具有負光焦度的第二透鏡組120、具有正光焦度的第三透鏡組130、孔徑光闌30、具有正光焦度的第四透鏡組140、具有負光焦度的第五透鏡組150以及具有正光焦度的第六透鏡組160,第一透鏡組110及第六透鏡組160基於孔徑光闌30對稱,第二透鏡組120及第五透鏡組150基於孔徑光闌30對稱,第三透鏡組130及第四透鏡組140基於孔徑光闌30對稱,投影物鏡滿足以下關係式:-0.7<f1/f2<-0.3,-1.1<f2/f3<-0.6,-1.1<f5/f4<-0.6,-0.7<f6/f5<-0.3,其中,f1是第一透鏡組的焦距,f2是第二透鏡組的焦距,f3是第三透鏡組的焦距,f4是第四透鏡組的焦距,f5是第五透鏡組的焦距,f6是第六透鏡組的焦距。具有上述結構的投影物鏡的物方視場的直徑以及適用波長範圍均較大,進而使得投影物鏡能夠兼容步進式曝光及掃描方式曝光,兼容ghi三線波長及i單線波長,兼容汞燈光源及LED光源,顯著的提升投影物鏡的兼容性,提高曝光系統的模組化水準。
The projection objective provided by this embodiment includes a
例示性地,本實施例中投影物鏡的像方視場的直徑最大值為72mm,如此之設置使得該投影物鏡既可以應用於54mm*33.5mm視場的步進式曝光系統,亦可應用於26.5mm*67mm視場的步進式或掃描式曝光系統,進而實現投影物鏡在步進式曝光及掃描式曝光方面的兼容。可以理解的是,本實施例中的投影物鏡能夠被應用於視場直徑小於或等於72mm的所有曝光系統中,不限於視場為上述兩個尺寸的曝光系統。 Illustratively, the maximum diameter of the image-side field of view of the projection objective in this embodiment is 72mm. Such a setting allows the projection objective to be applied to either a step-by-step exposure system with a 54mm*33.5mm field of view. Stepping or scanning exposure system with 26.5mm*67mm field of view, which realizes the compatibility of projection objective lens in stepping exposure and scanning exposure. It can be understood that the projection objective in this embodiment can be applied to all exposure systems with a field of view diameter of less than or equal to 72 mm, and is not limited to exposure systems with a field of view of the above two sizes.
選擇性地,投影物鏡的適用波長範圍為360-440mm。必須說明的是,光源中i線的波長為365nm、h線的波長為405nm,g線的波長為436nm,本實施例中投影物鏡的適用波長範圍為360-440mm,i線、h線以及g線的波長均在該範圍內,且參照下表1及表2,汞燈光源以及LED光源的光譜亦均在上述範圍內,使得投影物鏡能夠兼容汞燈光源及LED光源,兼容i線波長及ghi三線波長。此外,曝光系統的曝光產量與投影物鏡的像方視場的直徑最大值呈正比,如此大的像方視場的直徑最大值使得採用該投影物鏡的曝光系統的產率較高。 Optionally, the applicable wavelength range of the projection objective is 360-440mm. It must be noted that the wavelength of the i-line in the light source is 365nm, the wavelength of the h-line is 405nm, and the wavelength of the g-line is 436nm. The applicable wavelength range of the projection objective in this embodiment is 360-440mm, the i-line, h-line and g The wavelength of the light source is within this range, and referring to Table 1 and Table 2, the spectrum of the mercury lamp light source and the LED light source are also within the above range, so that the projection objective lens can be compatible with the mercury light source and the LED light source, and compatible with the i-line wavelength and ghi three-line wavelength. In addition, the exposure output of the exposure system is directly proportional to the maximum diameter of the image-side field of view of the projection objective. Such a large maximum image-side field of view makes the exposure system using the projection objective have a higher yield.
表1
表2
選擇性地,每個透鏡組(例如:前述第一透鏡組、前述第二透鏡組、前述第三透鏡組、前述第四透鏡組、前述第五透鏡組、前述第六透鏡組)內的所有透鏡均可為球面鏡。 Optionally, all of each lens group (for example: the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group, and the sixth lens group) The lens can be a spherical lens.
必須說明的是,非球面鏡的加工難度及加工成本均較高,且球面鏡相對於非球面鏡更易進行檢測與集成,因此將投影物鏡內的所有鏡片均設置為球面鏡能夠達到降低投影物鏡加工難度及加工成本,便於透鏡 檢測及投影物鏡集成的有益效果。 It must be noted that the processing difficulty and processing cost of aspheric mirrors are relatively high, and spherical mirrors are easier to detect and integrate compared to aspheric mirrors. Therefore, setting all the lenses in the projection objective as spherical mirrors can reduce the processing difficulty and processing of the projection objective. Cost, convenient lens The beneficial effect of the integration of detection and projection objectives.
例示性地,投影物鏡的放大倍率可以為-1。 Illustratively, the magnification of the projection objective lens may be -1.
選擇性地,投影物鏡的共軛距可以為900nm。 Optionally, the conjugate distance of the projection objective lens may be 900 nm.
必須說明的是,該共軛距較小,說明透鏡的集成度高,軸向長度較小,占用曝光系統的空間較小,有利於曝光系統的高集成化。 It must be noted that the small conjugate distance indicates that the lens has a high degree of integration, a small axial length, and takes up less space in the exposure system, which is beneficial to the high integration of the exposure system.
在本實施例中,投影物鏡的物距及像距均可以大於40mm。 In this embodiment, both the object distance and the image distance of the projection objective lens can be greater than 40 mm.
必須說明的是,上述物距及像距較大,使得物方及像方均有較大的裝配空間,進而降低零件的裝配難度。 It must be noted that the above-mentioned object distance and image distance are large, so that there is a large assembly space on the object side and the image side, thereby reducing the difficulty of assembling parts.
選擇性地,投影物鏡的像方數值孔徑可以為0.18。 Optionally, the image-side numerical aperture of the projection objective lens may be 0.18.
必須說明的是,像方數值孔徑與解析度呈正比,上述較大的數值孔徑使得投影物鏡的解析度較高。 It must be noted that the numerical aperture of the image side is proportional to the resolution, and the above-mentioned larger numerical aperture makes the resolution of the projection objective lens higher.
綜上,本實施例提供的投影物鏡在能夠實現高兼容性同時,亦具有高的解析度及產率。 In summary, the projection objective provided by this embodiment can achieve high compatibility while also having high resolution and productivity.
例示性的,繼續參照圖1,第一透鏡組110包含沿光軸依次設置的第一透鏡111、第二透鏡112、第三透鏡113及第四透鏡114,第一透鏡111為雙凹透鏡,由高色散材料構成,第二透鏡112為彎月透鏡,由低色散材料構成,第三透鏡113為彎月透鏡,由低色散材料構成,第四透鏡114為雙凸透鏡,由高色散材料構成。第二透鏡組120包含沿光軸依次設置的第五透鏡121及第六透鏡122,第五透鏡121為雙凸透鏡,由低色散材料構成,第六透鏡122為雙凹透鏡,由高色散材料構成。第三透鏡組130包含沿光軸依次設置的第七透鏡131、第八透鏡132、第九透鏡133及第十透鏡134,第七透鏡131為雙凹透鏡,由低色散材料構成;第八透鏡132為雙
凸透鏡,由高色散材料構成,第九透鏡133為彎月透鏡,由低色散材料構成;第十透鏡134為雙凸透鏡,由高色散材料構成。
Exemplarily, referring to FIG. 1, the
例示性地,高色散材料可以選自CAF2、SILICA及SFSL5Y。 Illustratively, the high-dispersion material may be selected from CAF2, SILICA, and SFSL5Y.
在一些實施例中,第一透鏡111、第四透鏡114、第六透鏡122、第八透鏡132、第十透鏡134的材料均包含有:CAF2、SILICA及SFSL5Y中至少之一。
In some embodiments, the materials of the
例示性地,低色散材料可以選自PBL35Y、PBL6Y及PBL1Y。 Illustratively, the low-dispersion material may be selected from PBL35Y, PBL6Y, and PBL1Y.
在部分實施例中,第二透鏡112、第三透鏡113、第五透鏡121、第七透鏡131、第九透鏡133的材料均包含有:CAF2、SILICA及SFSL5Y中至少之一。
In some embodiments, the materials of the
必須說明的是,在本實施例中高色散材料以及低色散材料亦可為其他滿足對應色散要求的材料,本實施例僅以上述材料為例進行例示性的說明。 It must be noted that the high-dispersion material and the low-dispersion material in this embodiment can also be other materials that meet the corresponding dispersion requirements. This embodiment only uses the above-mentioned materials as an example for illustrative description.
表3提供本實施例中投影物鏡的一種設計值。表3中半徑R欄表示鏡片的曲率半徑,正的半徑R代表鏡片曲率中心在表面的右邊,負的半徑R代表鏡片曲率中心在表面左邊。1E+18代表此表面為平面,OBJ代表物面,STOP代表孔徑光闌,IMA代表像面。表中材料欄「AIR」代表鏡片與鏡片間的空氣間隔,填充氣體為空氣,材料欄中非AIR的材料是指具體鏡片材料種類。半口徑欄是指鏡片表面的最大通光口徑的一半。表中厚度d欄代表空氣間隔或光學元件厚度,光學元件厚度或兩個光學元件的 間隔均是指此表面到下個表面的軸上距離,所有尺寸單位皆是毫米。 Table 3 provides a design value of the projection objective lens in this embodiment. The radius R column in Table 3 represents the radius of curvature of the lens. A positive radius R represents that the center of curvature of the lens is on the right side of the surface, and a negative radius R represents that the center of curvature of the lens is on the left side of the surface. 1E+18 represents the surface is flat, OBJ represents the object surface, STOP represents the aperture stop, and IMA represents the image surface. In the table, the material column "AIR" represents the air gap between the lens and the lens, the filling gas is air, and the non-AIR material in the material column refers to the specific lens material type. The half-aperture column refers to half of the maximum clear aperture of the lens surface. The thickness d in the table represents the air gap or the thickness of the optical element, the thickness of the optical element or the thickness of two optical elements The interval refers to the on-axis distance from this surface to the next surface, and all dimensions are in millimeters.
表3
按照表1參數設計出的投影物鏡的共軛距為900mm,放大倍率為-1,物方視場的直徑最大值為72mm,物距及像距均為40.08mm,像方數值孔徑為0.18,能夠實現的最小解析度為1μm。 The conjugate distance of the projection objective designed according to the parameters in Table 1 is 900mm, the magnification is -1, the maximum diameter of the object field of view is 72mm, the object and image distances are both 40.08mm, and the image side numerical aperture is 0.18. The minimum resolution that can be achieved is 1μm.
採用具有表1參數的投影物鏡的曝光系統進行實驗,得到實驗數據及分析結果如下: The experiment was carried out with the exposure system of the projection objective lens with the parameters in Table 1, and the experimental data and analysis results were as follows:
圖2是本發明實施例提供的一種投影物鏡的光線像差圖。採用的曝光系統的光源為汞燈光源。在圖2中從下至上的3行圖依次代表不同高度的物方視場點在光瞳處的像差分布,每行的兩幅圖分別代表光瞳子午及弧矢像差分布,每幅圖的橫坐標代表光瞳上的高度,其中中心點代表光瞳中心,縱坐標代表像差大小,每幅圖的不同曲線分別代表各波長下的像差曲線。參照圖2可知各視場點的最大像差均小於0.002306mm,說明物鏡的波像差均被很好地校正,各波長間的色差均被很好地校正。必須說明的是,圖2中不同種類的線段代表不同波長下的像質。 Fig. 2 is a diagram of ray aberration of a projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 2, the three rows of graphs from bottom to top represent the aberration distribution of the object field points of different heights at the pupil. The two graphs in each row represent the pupil meridian and sagittal aberration distribution, each The abscissa of the figure represents the height on the pupil, the center point represents the center of the pupil, and the ordinate represents the aberration. The different curves in each figure represent the aberration curves at each wavelength. 2 that the maximum aberration of each field of view point is less than 0.002306 mm, indicating that the wave aberration of the objective lens is well corrected, and the chromatic aberration between each wavelength is well corrected. It must be noted that the different types of line segments in Figure 2 represent image quality at different wavelengths.
圖3是本發明實施例提供的一種投影物鏡的垂軸色差圖。採用的曝光系統的光源為汞燈光源。圖3中縱坐標為物方高度,橫坐標為各物方高度處的垂軸色差值,「Short」為365nm波長,「Long」為435nm波長,「Ref」為405nm波長,「Short-Long」曲線為365nm及435nm波長在各視場高度下的垂軸色差值,「Short-Ref」曲線為365nm及405nm波長在各視場高度下的垂軸色差值。從圖3中可以看出物鏡最大垂軸色差為54nm,說 明物鏡的垂軸色差已被很好地校正。 Fig. 3 is a vertical axis chromatic aberration diagram of a projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 3, the ordinate is the height of the object, and the abscissa is the chromatic aberration value of the vertical axis at each height of the object. "Short" is 365nm wavelength, "Long" is 435nm wavelength, "Ref" is 405nm wavelength, "Short-Long" "The curve is the vertical chromatic aberration value of 365nm and 435nm wavelengths at each field height, and the "Short-Ref" curve is the vertical chromatic aberration value of 365nm and 405nm wavelengths at each field height. It can be seen from Fig. 3 that the maximum vertical axis chromatic aberration of the objective lens is 54 nm. The vertical chromatic aberration of the bright objective lens has been well corrected.
圖4是本發明實施例提供的一種投影物鏡的遠心曲線。採用的曝光系統的光源為汞燈光源。在圖4中橫坐標為物方視場高度,縱坐標為各視場下遠心大小,圖式中兩條曲線分別為物鏡像方遠心及物方遠心,從圖式中可以看出整個視場內物方遠心及像方遠心最大值不超過5.61mrad,物鏡的遠心已被很好地校正。 Fig. 4 is a telecentric curve of a projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 4, the abscissa is the height of the object field of view, and the ordinate is the size of the telecentricity in each field of view. The two curves in the figure are the telecentricity of the object mirror image and the telecentricity of the object. The entire field of view can be seen from the figure. The maximum value of the inner object-side telecentricity and the image-side telecentricity does not exceed 5.61mrad, and the telecentricity of the objective lens has been well corrected.
圖5是本發明實施例提供的又一種投影物鏡的光線像差圖。採用的曝光系統的光源為LED光源。在圖5中從下至上的3行圖依次代表不同高度的物方視場點在光瞳處的像差分布,每行的兩幅圖分別代表光瞳子午及弧矢像差分布,每幅圖的橫坐標代表光瞳上的高度,其中中心點代表光瞳中心,縱坐標代表像差大小,每幅圖的不同曲線分別代表各波長下的像差曲線。從圖5中可以看出各視場點的最大像差均小於0.002478mm,說明物鏡的波像差均被很好地校正。必須說明的是,圖5中不同種類的線段代表不同波長下的像質。 FIG. 5 is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is an LED light source. In Figure 5, the three rows of graphs from bottom to top represent the aberration distribution at the pupil at different heights of the object field of view. The two graphs in each row represent the pupil meridian and sagittal aberration distributions, each The abscissa of the figure represents the height on the pupil, the center point represents the center of the pupil, and the ordinate represents the aberration. The different curves in each figure represent the aberration curves at each wavelength. It can be seen from Figure 5 that the maximum aberration of each field of view point is less than 0.002478mm, indicating that the wave aberration of the objective lens is well corrected. It must be noted that the different types of line segments in Figure 5 represent image quality at different wavelengths.
圖6是本發明實施例提供的又一種投影物鏡的垂軸色差圖。採用的曝光系統的光源為LED光源。圖6中縱坐標為物方高度,橫坐標為各物方高度處的垂軸色差值,「Short」為365nm波長,「Long」為435nm波長,「Ref」為405nm波長,「Short-Long」曲線為365nm及435nm波長在各視場高度下的垂軸色差值,「Short-Ref」曲線為365nm及405nm波長在各視場高度下的垂軸色差值。從圖6中可以看出物鏡最大垂軸色差為66nm,說明物鏡的垂軸色差已被很好地校正。 Fig. 6 is a vertical axis chromatic aberration diagram of another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is an LED light source. In Figure 6, the ordinate is the height of the object, and the abscissa is the chromatic aberration value of the vertical axis at each height of the object. "Short" is the wavelength of 365nm, "Long" is the wavelength of 435nm, "Ref" is the wavelength of 405nm, "Short-Long" "The curve is the vertical chromatic aberration value of 365nm and 435nm wavelengths at each field height, and the "Short-Ref" curve is the vertical chromatic aberration value of 365nm and 405nm wavelengths at each field height. It can be seen from Fig. 6 that the maximum vertical axis chromatic aberration of the objective lens is 66 nm, indicating that the vertical axis chromatic aberration of the objective lens has been well corrected.
圖7是本發明實施例提供的又一種投影物鏡的遠心曲線。採 用的曝光系統的光源為LED光源。在圖7中橫坐標為物方視場高度,縱坐標為各視場下遠心大小,圖中兩條曲線分別為物鏡像方遠心及物方遠心,從圖7中可以看出整個視場內物方遠心及像方遠心最大值不超過5.62mrad,物鏡的遠心已被很好地校正。 Fig. 7 is a telecentric curve of another projection objective provided by an embodiment of the present invention. Pick The light source of the exposure system used is an LED light source. In Figure 7, the abscissa is the height of the object field of view, and the ordinate is the size of the telecentricity in each field of view. The two curves in the figure are the telecentricity of the object mirror image and the telecentricity of the object. From Figure 7, it can be seen that the entire field of view The maximum value of object-side telecentricity and image-side telecentricity does not exceed 5.62mrad, and the telecentricity of the objective lens has been well corrected.
表4提供本實施例中投影物鏡的又一種設計值。表4中半徑R欄表示鏡片的曲率半徑,正的半徑R代表鏡片曲率中心在表面的右邊,負的半徑R代表鏡片曲率中心在表面左邊。1E+18代表此表面為平面,OBJ代表物面,STOP代表孔徑光闌,IMA代表像面。表中材料欄「AIR」代表鏡片與鏡片間的空氣間隔,填充氣體為空氣,材料欄中非AIR的材料是指具體鏡片材料種類。半口徑欄是指鏡片表面的最大通光口徑的一半。表中厚度d欄代表空氣間隔或光學元件厚度,光學元件厚度或兩個光學元件的間隔均是指此表面到下個表面的軸上距離,所有尺寸單位皆為毫米。 Table 4 provides another design value of the projection objective lens in this embodiment. The radius R column in Table 4 represents the radius of curvature of the lens. A positive radius R represents that the center of curvature of the lens is on the right side of the surface, and a negative radius R represents that the center of curvature of the lens is on the left side of the surface. 1E+18 represents the surface is flat, OBJ represents the object surface, STOP represents the aperture stop, and IMA represents the image surface. In the table, the material column "AIR" represents the air gap between the lens and the lens, the filling gas is air, and the non-AIR material in the material column refers to the specific lens material type. The half-aperture column refers to half of the maximum clear aperture of the lens surface. The thickness d column in the table represents the air gap or the thickness of the optical element. The thickness of the optical element or the distance between two optical elements refers to the on-axis distance from this surface to the next surface. All dimensions are in millimeters.
表4
按照表2參數設計出的投影物鏡的共軛距為900mm,放大倍率為-1,物方視場的直徑最大值為72mm,物距及像距均為45mm,像方數值孔徑為0.18,能夠實現的最小解析度為1μm。 The conjugate distance of the projection objective designed according to the parameters in Table 2 is 900mm, the magnification is -1, the maximum diameter of the object field of view is 72mm, the object and image distances are both 45mm, and the image side numerical aperture is 0.18. The minimum resolution achieved is 1μm.
採用具有表1參數的投影物鏡的光學系統進行實驗,得到實驗數據及分析結果如下: The experiment is carried out with the optical system of the projection objective lens with the parameters in Table 1, and the experimental data and analysis results are as follows:
圖8是本發明實施例提供的又一種投影物鏡的光線像差圖。採用的曝光系統的光源為汞燈光源。在圖8中從下至上的3行圖依次代表不同高度的物方視場點在光瞳處的像差分布,每行的兩幅圖分別代表光瞳子午及弧矢 像差分布,每幅圖的橫坐標代表光瞳上的高度,其中中心點代表光瞳中心,縱坐標代表像差大小,每幅圖的不同曲線分別代表各波長下的像差曲線。從圖8中可以看出各視場點的最大像差均小於0.002132mm,說明物鏡的波像差均被很好地校正,各波長間的色差均被很好地校正。必須說明的是,圖8中不同種類的線段代表不同波長下的像質。 FIG. 8 is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 8, the three rows of graphs from bottom to top represent the aberration distribution at the pupil of the object field of view points of different heights, and the two graphs in each row represent the pupil meridian and sagittal respectively. Aberration distribution, the abscissa of each picture represents the height on the pupil, the center point represents the pupil center, and the ordinate represents the aberration size, and the different curves of each picture represent the aberration curves at each wavelength. It can be seen from Fig. 8 that the maximum aberration of each field of view point is less than 0.002132mm, indicating that the wave aberration of the objective lens is well corrected, and the chromatic aberration between each wavelength is well corrected. It must be noted that the different types of line segments in Fig. 8 represent image quality at different wavelengths.
圖9是本發明實施例提供的又一種投影物鏡的垂軸色差圖。採用的曝光系統的光源為汞燈光源。圖9中縱坐標為物方高度,橫坐標為各物方高度處的垂軸色差值,「Short」為365nm波長,「Long」為435nm波長,「Ref」為405nm波長,「Short-Long」曲線為365nm及435nm波長在各視場高度下的垂軸色差值,「Short-Ref」曲線為365nm及405nm波長在各視場高度下的垂軸色差值。從圖9中可以看出物鏡最大垂軸色差為63nm,說明物鏡的垂軸色差已被很好地校正。 Fig. 9 is a vertical axis chromatic aberration diagram of yet another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 9 the ordinate is the height of the object, and the abscissa is the vertical chromatic aberration value at each height of the object. "Short" is the wavelength of 365nm, "Long" is the wavelength of 435nm, "Ref" is the wavelength of 405nm, "Short-Long" "The curve is the vertical chromatic aberration value of 365nm and 435nm wavelengths at each field height, and the "Short-Ref" curve is the vertical chromatic aberration value of 365nm and 405nm wavelengths at each field height. It can be seen from Fig. 9 that the maximum vertical axis chromatic aberration of the objective lens is 63nm, indicating that the vertical axis chromatic aberration of the objective lens has been well corrected.
圖10是本發明實施例提供的又一種投影物鏡的遠心曲線。採用的曝光系統的光源為汞燈光源。在圖10中橫坐標為物方視場高度,縱坐標為各視場下遠心大小,圖中兩條曲線分別為物鏡像方遠心及物方遠心,從圖中可以看出整個視場內物方遠心及像方遠心最大值不超過5.59mrad,物鏡的遠心已被很好地校正。 FIG. 10 is a telecentric curve of another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is a mercury lamp light source. In Figure 10, the abscissa is the height of the field of view of the object, and the ordinate is the size of the telecentricity in each field of view. The two curves in the figure are the telecentricity of the object mirror image and the telecentricity of the object. The maximum value of square telecentricity and image-side telecentricity does not exceed 5.59mrad, and the telecentricity of the objective lens has been well corrected.
圖11是本發明實施例提供的又一種投影物鏡的光線像差圖。採用三維曝光系統的光源為LED光源。在圖11中從下至上的3行圖依次代表不同高度的物方視場點在光瞳處的像差分布,每行的兩幅圖分別代表光瞳子午及弧矢像差分布,每幅圖的橫坐標代表光瞳上的高度,其中中心點代表光瞳中心,縱坐標代表像差大小,每幅圖的不同曲線分別代表各波 長下的像差曲線。從圖5中可以看出各視場點的最大像差均小於0.002294mm,說明物鏡的波像差均被很好地校正。必須說明的是,圖11中不同種類的線段代表不同波長下的像質。 FIG. 11 is a diagram of ray aberration of another projection objective provided by an embodiment of the present invention. The light source using the three-dimensional exposure system is an LED light source. In Figure 11, the three rows of graphs from bottom to top represent the aberration distribution at the pupil of the object field of view points of different heights. The two graphs in each row represent the pupil meridian and sagittal aberration distribution, each The abscissa of the figure represents the height on the pupil, the center point represents the center of the pupil, and the ordinate represents the aberration. The different curves in each figure represent the respective waves Aberration curve under long. It can be seen from Figure 5 that the maximum aberration of each field of view point is less than 0.002294mm, indicating that the wave aberration of the objective lens is well corrected. It must be noted that the different types of line segments in FIG. 11 represent the image quality at different wavelengths.
圖12是本發明實施例提供的又一種投影物鏡的垂軸色差圖。採用的曝光系統的光源為LED光源。圖12中縱坐標為物方高度,橫坐標為各物方高度處的垂軸色差值,「Short」為365nm波長,「Long」為435nm波長,「Ref」為405nm波長,「Short-Long」曲線為365nm及435nm波長在各視場高度下的垂軸色差值,「Short-Ref」曲線為365nm及405nm波長在各視場高度下的垂軸色差值。從圖12中可以看出物鏡最大垂軸色差為75nm,說明物鏡的垂軸色差已被很好地校正。 Fig. 12 is a vertical axis chromatic aberration diagram of yet another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is an LED light source. In Figure 12, the ordinate is the height of the object, and the abscissa is the chromatic aberration value of the vertical axis at each height of the object. "Short" is the wavelength of 365nm, "Long" is the wavelength of 435nm, "Ref" is the wavelength of 405nm, "Short-Long" "The curve is the vertical chromatic aberration value of 365nm and 435nm wavelengths at each field height, and the "Short-Ref" curve is the vertical chromatic aberration value of 365nm and 405nm wavelengths at each field height. It can be seen from Fig. 12 that the maximum vertical chromatic aberration of the objective lens is 75 nm, which indicates that the vertical chromatic aberration of the objective lens has been well corrected.
圖13是本發明實施例提供的又一種投影物鏡的遠心曲線。採用的曝光系統的光源為LED光源。在圖13中橫坐標為物方視場高度,縱坐標為各視場下遠心大小,圖中兩條曲線分別為物鏡像方遠心及物方遠心,從圖13中可以看出整個視場內物方遠心及像方遠心最大值不超過5.58mrad,物鏡的遠心已被很好地校正。 FIG. 13 is a telecentric curve of another projection objective provided by an embodiment of the present invention. The light source of the exposure system used is an LED light source. In Figure 13 the abscissa is the height of the object field of view, and the ordinate is the size of the telecentricity in each field of view. The two curves in the figure are the telecentricity of the object mirror image and the telecentricity of the object. The maximum value of object-side telecentricity and image-side telecentricity does not exceed 5.58mrad, and the telecentricity of the objective lens has been well corrected.
圖14是本發明實施例提供的一種曝光系統的結構示意圖。如圖14所示,曝光系統包含本發明任意實施例的投影物鏡5。繼續參照圖14,曝光系統進一步包含光源組件1、石英棒2、中繼組3、光罩4以及矽片6,必須說明的是,圖14所示光源組件1為LED光源組件,在本實施例的其他實施方式中光源組件1亦可為汞燈光源組件。
Fig. 14 is a schematic structural diagram of an exposure system provided by an embodiment of the present invention. As shown in FIG. 14, the exposure system includes the
10‧‧‧物平面 10‧‧‧Object plane
30‧‧‧孔徑光闌 30‧‧‧Aperture diaphragm
110‧‧‧第一透鏡組 110‧‧‧First lens group
111‧‧‧第一透鏡 111‧‧‧First lens
112‧‧‧第二透鏡 112‧‧‧Second lens
113‧‧‧第三透鏡 113‧‧‧third lens
114‧‧‧第四透鏡 114‧‧‧Fourth lens
120‧‧‧第二透鏡組 120‧‧‧Second lens group
121‧‧‧第五透鏡 121‧‧‧Fifth lens
122‧‧‧第六透鏡 122‧‧‧Sixth lens
130‧‧‧第三透鏡組 130‧‧‧Third lens group
131‧‧‧第七透鏡 131‧‧‧Seventh lens
132‧‧‧第八透鏡 132‧‧‧Eighth lens
133‧‧‧第九透鏡 133‧‧‧Ninth lens
134‧‧‧第十透鏡 134‧‧‧Tenth lens
140‧‧‧第四透鏡組 140‧‧‧Fourth lens group
150‧‧‧第五透鏡組 150‧‧‧Fifth lens group
160‧‧‧第六透鏡組 160‧‧‧Sixth lens group
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811311756.2A CN111142337B (en) | 2018-11-06 | 2018-11-06 | Projection objective and exposure system |
CN201811311756.2 | 2018-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202018362A TW202018362A (en) | 2020-05-16 |
TWI705279B true TWI705279B (en) | 2020-09-21 |
Family
ID=70515860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108140277A TWI705279B (en) | 2018-11-06 | 2019-11-06 | Projection objective lens and exposure system |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111142337B (en) |
TW (1) | TWI705279B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111474685B (en) * | 2020-06-01 | 2021-08-03 | 中国科学院长春光学精密机械与物理研究所 | Long-focus wide-spectrum achromatic optical lens |
CN114236975B (en) * | 2021-12-17 | 2022-08-19 | 中国科学院长春光学精密机械与物理研究所 | Illumination system lens applied to wave aberration detection |
CN114563866B (en) * | 2022-03-14 | 2024-02-20 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | Projection objective system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6903804B2 (en) * | 2001-03-28 | 2005-06-07 | Fujinon Corporation | Projection optical system and projection and light exposure apparatus using it |
CN101438196A (en) * | 2006-05-05 | 2009-05-20 | 卡尔·蔡司Smt股份公司 | Symmetrical objective having four lens groups for microlithography |
CN102298196A (en) * | 2010-06-22 | 2011-12-28 | 上海微电子装备有限公司 | Lithography projection objective with large view field and wide spectral line |
US8390935B2 (en) * | 2009-07-14 | 2013-03-05 | Fujifilm Corporation | Projection zoom lens and projection display device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102200624B (en) * | 2010-03-23 | 2013-05-22 | 上海微电子装备有限公司 | Photo-etching projection lens |
CN102621668B (en) * | 2012-04-21 | 2013-12-11 | 张家港鹏博光电科技有限公司 | Projection optical system |
-
2018
- 2018-11-06 CN CN201811311756.2A patent/CN111142337B/en active Active
-
2019
- 2019-11-06 TW TW108140277A patent/TWI705279B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6903804B2 (en) * | 2001-03-28 | 2005-06-07 | Fujinon Corporation | Projection optical system and projection and light exposure apparatus using it |
CN101438196A (en) * | 2006-05-05 | 2009-05-20 | 卡尔·蔡司Smt股份公司 | Symmetrical objective having four lens groups for microlithography |
US8390935B2 (en) * | 2009-07-14 | 2013-03-05 | Fujifilm Corporation | Projection zoom lens and projection display device |
CN102298196A (en) * | 2010-06-22 | 2011-12-28 | 上海微电子装备有限公司 | Lithography projection objective with large view field and wide spectral line |
Also Published As
Publication number | Publication date |
---|---|
CN111142337B (en) | 2021-04-02 |
CN111142337A (en) | 2020-05-12 |
TW202018362A (en) | 2020-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI705279B (en) | Projection objective lens and exposure system | |
US7573655B2 (en) | Unit magnification projection objective | |
US6863403B2 (en) | Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus | |
JP3819048B2 (en) | Projection optical system, exposure apparatus including the same, and exposure method | |
US6813098B2 (en) | Variable numerical aperture large-field unit-magnification projection system | |
JP2008519433A (en) | Apochromatic equal magnification projection optical system | |
JPH08190047A (en) | Optical projection system | |
JP2004045885A (en) | Optical integrator, illumination optical device, and device and method for exposure | |
CN102707415B (en) | Photoetching projection objective | |
CN104111534B (en) | A kind of multiplying power control method of symmetrical expression double-telecentric projection optical system | |
TWI715392B (en) | Photoetching projection objective lens and photoetching machine | |
TWI440988B (en) | Projection optical systems and exposure devices | |
KR20010007381A (en) | Projection optical system and projection exposure apparatus with the same, and device manufacturing method | |
CN102707414B (en) | Photoetching projection objective | |
CN104122669B (en) | A kind of symmetrical expression double-telecentric projection optical system and lithographic equipment | |
CN112394474B (en) | Photoetching projection objective and photoetching machine | |
CN110764224B (en) | Photoetching projection objective lens | |
TWI682249B (en) | Projection objective optical system and lithography machine | |
CN111929806B (en) | Photoetching projection objective and photoetching machine | |
JP2002365538A (en) | Projection optical system and exposure device provided with the same | |
TW202301037A (en) | Projection optical system, exposure apparatus and article manufacturing method capable of reducing aberration in a projection optical system provided with a correction optical system having a correction magnification | |
CN104062761A (en) | Wide spectral line projection optical system and photoetching device | |
TW202340787A (en) | Photolithography projection objective lens and photolithography machine | |
JPH0878324A (en) | Manufacture of element and exposure system |